Structure, method for manufacturing structure, and composition

Abstract

This invention provides a structure and its components with excellent shielding performance for electromagnetic waves in the tens of GHz frequency band, and also provides a method for manufacturing the structure with excellent shielding performance for electromagnetic waves in the tens of GHz frequency band, which can be easily manufactured. The structure includes: a substrate; a plurality of passive elements disposed on the substrate; and an electromagnetic wave absorbing film disposed on the substrate and located at least in the region between the plurality of passive elements. The passive elements are selected from the group including inductors and baluns. The electromagnetic wave absorbing film contains magnetic particles. When the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ', and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28 GHz frequency is 0.1 to 10; Requirement 2: μ” in the 47 GHz frequency is 0.1 to 5; Requirement 3: μ” in the 60 GHz frequency is 0.1 to 2.

Description

Technical Field

[0001] This invention relates to a structure with electromagnetic wave shielding function, a method for manufacturing the structure, and components used in the manufacturing of the structure. Prior Technology

[0002] Currently, there are various communication systems that utilize wireless technologies, such as mobile phones, smartphones, tablets, internet communication, WiFi (Wireless Fidelity), Bluetooth (registered trademark), and GPS (Global Positioning System). To support multiple communication systems, antennas capable of transmitting and receiving radio waves used in various communication systems, passive components that convert the radio waves received by the antennas into current or voltage, and semiconductor components that produce the transmission signals transmitted from the antennas are required. Furthermore, the increasing multifunctionality and miniaturization of mobile communication terminals in recent years, coupled with the miniaturization of wireless communication modules deployed in communication access points, has led to an increase in the actual installation density of passive components, semiconductor components, and antennas. Consequently, in mobile communication terminals and wireless communication modules, electromagnetic waves generated by the operation of passive components can sometimes affect other passive components, potentially hindering their normal operation. Therefore, electromagnetic wave shielding has traditionally been employed.

[0003] For example, in Patent Document 1, a conductivity tester is provided in the form of a System on Chip (SoC) to protect digital circuits from electromagnetic radiation generated by high-frequency circuits disposed on a substrate. A conductivity gauge is disposed around the high-frequency circuit. Furthermore, the conductivity gauge is described as being made of metals or alloys such as copper, aluminum, gold, silver, platinum, or tungsten.

[0004] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0017876 Summary of the Invention

[0005] In Patent Document 1, the conductive wire gauge protecting digital circuits from electromagnetic radiation is made of metal or alloy. Therefore, it does not provide sufficient shielding against electromagnetic waves in the tens of GHz frequency band. The purpose of this invention is to provide a structure and components with excellent shielding performance against electromagnetic waves in the tens of GHz frequency band. Furthermore, a method for manufacturing a structure that can easily produce a structure with excellent shielding performance against electromagnetic waves in the tens of GHz frequency band is provided.

[0006] The above objectives can be achieved through the following configuration. One embodiment of the present invention provides a structure comprising: a substrate; a plurality of passive elements disposed on the substrate; and an electromagnetic wave absorbing film disposed on the substrate and located at least in a region of the substrate between opposing passive elements among the plurality of passive elements, wherein the passive elements are selected from the group including sensors and baluns, the electromagnetic wave absorbing film contains magnetic particles, and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0007] One embodiment of the present invention provides a structure comprising: a substrate; a plurality of coil-shaped passive elements disposed on the substrate and having openings relative to the surface of the substrate; and an electromagnetic wave absorbing film disposed on the substrate and located at at least one opening of the plurality of coil-shaped passive elements, wherein the coil-shaped passive elements are selected from the group including sensors and baluns, the electromagnetic wave absorbing film comprises magnetic particles, and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0008] One embodiment of the present invention provides a structure comprising: a substrate; a plurality of passive elements disposed on the substrate; and an electromagnetic wave absorbing film disposed between the substrate and the passive elements and on at least one of the passive elements on the opposite side of the substrate, wherein the passive elements are selected from the group including sensors and baluns, the electromagnetic wave absorbing film contains magnetic particles, and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0009] It is preferable that the electromagnetic wave absorbing film is disposed in a region on the substrate between a plurality of coil-shaped passive elements disposed on the substrate. It is preferable to place the electromagnetic wave absorbing film between the substrate and the passive component, and on the opposite side of the substrate of the passive component. The magnetic particles contain at least one metallic element selected from Ni, Co, and Fe, and the average primary particle size is preferably 20~1000 nm. The thickness of the electromagnetic wave absorbing film is preferably below 300 μm.

[0010] One aspect of the present invention provides a method for manufacturing a structure, comprising: a step of coating a photosensitive composition containing magnetic particles onto a substrate disposed of a plurality of passive elements to form a composition layer; and a step of performing an exposure treatment and a development treatment on the composition layer to form an electromagnetic wave absorbing film disposed on the substrate and located at least in the region between opposing passive elements among the plurality of passive elements, wherein the passive elements are selected from the group including sensors and baluns, and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0011] One aspect of the present invention provides a method for manufacturing a structure, comprising: a step of coating a photosensitive composition containing magnetic particles onto at least one opening of a plurality of coil-shaped passive elements disposed on a substrate and having an opening relative to the surface of the substrate to form a composition layer; and a step of performing an exposure treatment and a development treatment on the composition layer to form an electromagnetic wave absorbing film disposed on the substrate and located at at least one opening of the plurality of coil-shaped passive elements; wherein the coil-shaped passive elements are selected from the group including sensors and baluns, and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0012] One aspect of the present invention provides a method for manufacturing a structure, comprising: a step of coating a photosensitive composition containing magnetic particles onto a substrate to form a composition layer; a step of performing an exposure treatment and a development treatment on the composition layer to form an electromagnetic wave absorbing film on the substrate; and a step of forming a plurality of passive elements on the electromagnetic wave absorbing film, wherein the passive elements are selected from the group including sensors and baluns; when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0013] One aspect of the present invention provides a method for manufacturing a structure, comprising: a step of coating a photosensitive composition containing magnetic particles onto a substrate disposed of a plurality of passive elements to form a composition layer; and a step of performing an exposure treatment and a development treatment on the composition layer to form an electromagnetic wave absorbing film on the plurality of passive elements, wherein the passive elements are selected from the group including sensors and baluns, and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0014] The steps of forming the constituent layer include coating a photosensitive constituent on the openings of the plurality of coil-shaped passive elements and on the substrate on which the plurality of coil-shaped passive elements are disposed, and the steps of forming the electromagnetic wave absorbing film are preferably formed in the area between the openings of the plurality of coil-shaped passive elements disposed on the substrate and the region between the plurality of coil-shaped passive elements on the substrate. The method further includes the steps of coating a photosensitive component onto an electromagnetic wave absorbing film forming a plurality of passive elements to form a component layer, and performing exposure and development treatments on the component layer to further form an electromagnetic wave absorbing film on the electromagnetic wave absorbing film forming a plurality of passive elements.

[0015] One embodiment of the present invention provides a composition for use in the formation of an electromagnetic wave absorbing film in a structure, wherein the composition comprises magnetic particles, a resin having acid groups, a curing compound, and a polymerization initiator. When the real part of the complex permeability μ of the electromagnetic wave absorbing film formed by using the composition is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2 The magnetic particles contain at least one metallic element selected from Ni, Co, and Fe, and the average primary particle size is preferably 20~1000 nm. [Invention Effects]

[0016] According to the present invention, a structure and components with excellent shielding performance against electromagnetic waves in the tens of GHz frequency band can be provided. Furthermore, a method for manufacturing a structure that can easily produce a structure with excellent shielding performance against electromagnetic waves in the tens of GHz frequency band is provided. Simple Explanation of the Diagram

[0017] Figure 1 is a schematic top view showing a first example of the structure of an embodiment of the present invention. Figure 2 is a schematic cross-sectional view of a first example of the structure of an embodiment of the present invention. Figure 3 is a schematic perspective view of a sensor, representing a first example of the structure of an embodiment of the present invention. Figure 4 is a schematic perspective view of a sensor, representing a first example of a structure according to an embodiment of the present invention. Figure 5 is a schematic cross-sectional view showing an example of a manufacturing method of the first embodiment of the structure of the present invention. Figure 6 is a schematic cross-sectional view showing an example of a manufacturing method of the first embodiment of the structure of the present invention. Figure 7 is a schematic cross-sectional view showing an example of a manufacturing method of the first embodiment of the structure of the present invention. Figure 8 is a schematic perspective view of a second example of the structure of an embodiment of the present invention. Figure 9 is a schematic cross-sectional view showing an example of a manufacturing method of a second embodiment of the structure of the present invention. Figure 10 is a schematic perspective view of a third example of the structure of an embodiment of the present invention. Figure 11 is a schematic cross-sectional view showing an example of a manufacturing method of a third embodiment of the structure of the present invention. Figure 12 is a schematic perspective view of the fourth example of the structure of the embodiment of the present invention. Figure 13 is a schematic cross-sectional view showing an example of a manufacturing method of the fourth embodiment of the structure of the present invention. Figure 14 is a schematic cross-sectional view showing an example of a manufacturing method of the fourth embodiment of the structure of the present invention. Figure 15 is a schematic perspective view of the fifth example of the structure of the embodiment of the present invention. Figure 16 is a schematic cross-sectional view showing an example of a manufacturing method of the fifth embodiment of the structure of the present invention. Figure 17 is a schematic cross-sectional view showing an example of a manufacturing method of the fifth embodiment of the structure of the present invention. Figure 18 is a schematic perspective view of the sixth example of the structure of an embodiment of the present invention. Figure 19 is a schematic cross-sectional view showing an example of a manufacturing method of the sixth embodiment of the structure of the present invention. Figure 20 is a graph showing an example of the magnetic field of the sensor. Figure 21 is a schematic perspective view of an example of an antenna. Figure 22 is a schematic perspective view of the structure of Comparative Example 2. Implementation

[0018] Hereinafter, the structure, manufacturing method of the structure and components of the present invention will be described in detail based on the preferred embodiments shown in the accompanying drawings. Furthermore, the figures described below are illustrative of the present invention, and the present invention is not limited to the figures shown below. Furthermore, the diagrams described below emphasize the sensor and magnetic parts of the actual components, while omitting diagrams of the surrounding circuitry, copper wires, and waveguides. Additionally, the "~" sign used to indicate a range of values ​​below refers to the values ​​recorded on both sides. For example, ε for the value ε α ~ ε β means that the range of ε includes the values ​​ε α and ε β. In mathematical notation, this would be ε α ≤ ε ≤ ε β. Regarding angles, unless otherwise specified, they are included within the range of errors generally permissible in the relevant technical field.

[0019] [Example of a struct] Figure 1 is a schematic top view of a first example of the structure according to an embodiment of the present invention, and Figure 2 is a schematic cross-sectional view of a first example of the structure according to an embodiment of the present invention. The structure 10 includes: a substrate 20; a plurality of passive elements 11 disposed on the substrate 20; and an electromagnetic wave absorbing film 24 disposed on the substrate 20 and located at least in a region 21 between opposing passive elements 11 among the plurality of passive elements 11 on the substrate 20. In FIG1, the electromagnetic wave absorbing film 24 is disposed on the surface 20a of the substrate 20 to surround the passive elements 11. A plurality of passive elements 11 are electrically connected to each other. Regarding structure 10, as shown in Figure 2, two interlayer insulating films 22 are separately disposed on substrate 20, and a passive element 11 is disposed on each interlayer insulating film 22. An electromagnetic wave absorbing film 24 surrounds the passive element 11 and is disposed on the surface 20a of substrate 20.

[0020] The passive element 11 is selected from the group including sensors and baluns. The balun of the present invention is a balun transformer described later. The passive element 11 shown in FIG1 is, for example, sensor 12 and sensor 14. On the substrate 20, the passive elements 11 are arranged separately, meaning that on the same side of the substrate 20, as a plurality of passive elements 11, for example, sensors 12 and sensors 14 are provided, and the sensors 12 are provided on the surface 20a of the substrate 20, rather than on the back side 20b of the substrate 20. Cases where the substrate 20 has a step, a bent substrate 20, or where there are other layers such as an insulating film between the substrate 20 and the passive elements 11 are also considered as cases where the substrate 20 has a step, a bent substrate 20, or a substrate 20 and the passive elements 11 contain other layers. Furthermore, the electromagnetic wave absorbing film 24 need only be located in the region 21 between the passive elements 11 on the substrate 20. The region 21 between the passive elements 11 on the substrate 20 refers to, for example, the space on the opposite side of the sensors 12 and 14 when the sensors 12 and 14 are arranged facing each other.

[0021] For example, as shown in FIG3, the sensor 12 is a coil and is composed of a strip member 12a. The sensor 12 has a polygonal shape such as a circle or an octagon. The sensor 12 has an opening 13 that opens relative to the surface 20a of the substrate 20. The opening 13 of the sensor 12 refers to the area surrounded by the strip member 12a. Sensor 12 is a passive element that operates near its self-resonant frequency and, by passing a large current through it at that frequency, extracts signals of a specific frequency. The self-resonant frequency is, for example, 60 GHz. Regarding sensors, for example, they utilize electromagnetic waves used in the 5G (Generation) communication standard, which operates in the frequency band of 28GHz to 80GHz. The sensor is made of copper, for example. Furthermore, the thickness of the sensor is, for example, 0.1~500 μm.

[0022] Sensor 14 is, for example, a coil as shown in FIG. 4, and is constructed from a strip member 14a with a predetermined number of turns. Like sensor 12, sensor 14 has a polygonal shape, such as a circle or octagon. Sensor 14 has an opening 15 that opens relative to the surface 20a of substrate 20. The opening 15 of sensor 14 refers to the area surrounded by the strip member 14a. The sensor 14 determines its size and number of turns by means of the resonant frequency. For example, when the resonant frequency is 60 GHz, the outer diameter is 100 μm, the width of the strip member 14a is 15 μm, the thickness of the strip member is 2 μm, and the number of turns is 1.75. The coil shown in inductor 12 and the coil shown in inductor 14 can be used individually as inductors, or two coils can be stacked together to be used as a balun transformer. The thickness of the coil shown in inductor 12 and the coil shown in inductor 14 can be different.

[0023] A balun transformer (not shown) is, for example, a coil shaped like sensor 12 or sensor 14, with the coils spaced a certain distance, for example, 10 μm to 300 μm, in a vertical direction perpendicular to the surface 20a of substrate 20, and with the centers of the two coils aligned. A balun transformer is a component that converts or modulates a high-frequency signal of tens of GHz input to one coil to another coil. A balun transformer aligns the waveform of an input high-frequency signal (tens of GHz) and reverses the waveform of the high-frequency signal. Furthermore, a balun transformer is a component used to convert electrical signals in a balanced or unbalanced state. For example, a balun transformer is made of copper. The thickness of the coils in a balun transformer can vary, for example, from 0.1 to 500 μm. Furthermore, if both the coils of sensor 12 and sensor 14 are input with high-frequency signals in the tens of GHz band, a high-frequency electromagnetic field in the tens of GHz band will be generated. For example, if the electromagnetic field generated by the high frequency generated by sensor 14 is not shielded by using electromagnetic wave absorbing film 24, it may affect sensor 12. Sensors 12 and 14, as well as the balun transformer, are also referred to as coil-shaped passive elements.

[0024] The substrate 20 is made of, for example, Si, polyimide, or SiO2. The interlayer insulating film 22 is made of, for example, SiO2. Furthermore, the substrate 20 and the interlayer insulating film 22 are also made of glass epoxy resin such as FR (Flame Retardant)-4 or PTFE (polytetrafluoroethylene). Sensors 12 and 14, as well as the balun transformer, are made of copper (Cu). Furthermore, the interlayer insulating film 22 is different from the electromagnetic wave absorbing film 24. When the real part of the complex permeability μ of the interlayer insulating film 22 is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the interlayer insulating film 22 does not satisfy the following conditions 1 to 3. For example, regarding the interlayer insulating film 22, the real part μ' is 1 and the complex part μ” is zero. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0025] Structure 10, for example, is used in antenna packaging. Besides the aforementioned sensors 12 and 14, and the passive element 11 of the balun transformer (not shown), although not shown, it may include, for example, an array antenna, an A / D (Analog / Digital) circuit, memory, and an ASIC (Application Specific Integrated Circuit). The A / D circuit, memory, and ASIC are, for example, composed of various semiconductor components. Furthermore, in addition to the above-mentioned components, the structure 10 includes various circuits and components found in mobile communication terminals such as smartphones or wireless communication modules, such as RF (Radio Frequency) circuits, power amplifiers for transmission, low-noise amplifiers for reception, integrated passive components, switches, or phase shifters.

[0026] The substrate 20 functions as a support for the structure 10 and is equipped with the aforementioned passive component 11. Furthermore, an electromagnetic wave absorbing film 24 is disposed on the substrate 20. Additionally, A / D circuits, memory, and ASICs constituting the aforementioned antenna package can be disposed thereon. The interlayer insulating film 22 is formed with the inductor 12 and the inductor 14, as well as the balun transformer, and sets the inductor 12 and the inductor 14, as well as the balun transformer, in an electrically insulating state. Regarding the interlayer insulating film 22, there are no particular limitations as long as it can make the sensor 12 and sensor 14, as well as the balun transformer, electrically insulated. Various films used in the formation of semiconductor elements can be used.

[0027] The electromagnetic wave absorbing film 24 absorbs electromagnetic waves emitted from sensor 12 or sensor 14, and the balun transformer. By shielding electromagnetic waves emitted from one of the sensors 12 and 14, and the balun transformer, the electromagnetic wave absorbing film 24 can suppress the influence of electromagnetic waves on the other of the sensors 12 and 14, and the balun transformer. This prevents obstruction of the normal operation of the passive components. The electromagnetic wave absorbing film 24 contains magnetic particles. When the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of the following conditions 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2 By utilizing magnetic particles, the electromagnetic wave absorbing film 24 provides sufficient shielding performance against electromagnetic waves in the tens of GHz frequency band. Furthermore, the magnetic particles will be explained later. The preferred range for elements 1 to 3 is as follows. Requirement 1: μ” in the 28GHz frequency is 0.7~10 Requirement 2: μ” in the 47GHz frequency is 0.5~5 Requirement 3: μ” in the 60GHz frequency is 0.2~2

[0028] The real part μ' and the complex part μ of the complex permeability μ of the electromagnetic wave absorbing film can be measured in the following manner. As the measurement apparatus, a vector network analyzer (product name: N5225B) from Keysight Technologies, Inc. and a horn antenna (product name: RH12S23, RH06S10) from KEYCOM Corporation were used. Next, using the free-space method, with the incident angle set to 0° and the scanning frequency band set to 55.0 GHz to 95.0 GHz, and with one plane of each electromagnetic wave absorbing film facing the incident side, S-parameter measurements were performed every 0.1 GHz to determine the permeability (μ' and μ”) at 60 GHz. By changing the scanning frequency band, the permeability (μ' and μ”) at 28 GHz and 47 GHz were determined. Furthermore, the complex part μ” of the complex permeability μ of the interlayer insulating film 22 could be measured in the same manner as the real part μ' and complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film.

[0029] Permeability is the rate of change of magnetic flux density (B) produced when a magnetic field (H) is applied to a material, and is expressed by the following formula. μ=B / H In the case of a magnetic material, although more magnetic flux is introduced into the magnetic material, the value remains 1 because the material itself is not magnetic. Furthermore, the permeability is expressed by the following formula. Where j in the following formula represents an imaginary number. μ = μ'(real part) - j × μ"(imaginary part) In the case of a current reversing at a high frequency, as with electromagnetic waves, the real part represents the performance of a magnetic body that generates a higher magnetic flux density, while the imaginary part μ represents energy loss. Specifically, the magnetic moment of the crystal in the magnetic body tends to align with the direction of the magnetic field generated by the high frequency, but when the magnetic moment reverses in the opposite direction, a delay in reversal time or energy loss (differential heat) occurs. At high frequencies, changes in the magnetic moment within a magnetic material cannot keep up with changes in the magnetic field imparted by an external electromagnetic field, resulting in significant energy loss. This effect can be utilized for the absorption of electromagnetic waves.

[0030] Furthermore, it is preferable that the thickness of the electromagnetic wave absorbing film 24 is less than 300 μm. If the thickness of the electromagnetic wave absorbing film 24 is less than 300 μm, the electromagnetic wave shielding performance is maintained, and the structure can be made thinner. The thickness of the electromagnetic wave absorbing film 24 is preferably 10~200μm, with a lower limit of 5μm.

[0031] An array antenna constituting an antenna package may have, for example, four antennas. For instance, all four antennas may be identical. The array antenna and its configuration are not particularly limited and can be appropriately determined based on the transmitting or receiving frequency band, the received polarization direction, etc. Furthermore, while an array antenna may have four antennas, it is not limited to this. It may not be an array antenna, but rather a single antenna.

[0032] An A / D circuit converts analog signals into digital signals using a known AD converter. An A / D circuit also converts signals received by an array antenna via radio waves into digital signals. An ASIC is an entity that obtains the raw data or signals to be transmitted to the array antenna from the received signals that have been digitized. Furthermore, it generates transmission data or signals from the state of digital signals. The function of an ASIC is not particularly limited and can be appropriately determined based on its application. Furthermore, the A / D circuit converts the transmitted data or signals generated by the ASIC into analog signals that can be transmitted by the array antenna.

[0033] The memory system records transmitted data or signals generated in the aforementioned ASIC, as well as digitized received signals received by the array antenna. For example, volatile memory such as DRAM (Dynamic Random Access Memory) is preferred, while HBM (High Bandwidth Memory) is even better. Furthermore, the electromagnetic interference generated by the array antenna is suppressed in the A / D circuit, memory, and ASIC through the electromagnetic wave absorption film 24. This ensures that the normal operation of the A / D circuit, memory, and ASIC is not hindered, and malfunctions are also suppressed. By controlling the absorption of electromagnetic waves through the electromagnetic wave absorption film 24, the directivity of the antenna output is enhanced. Furthermore, a magnetic material is placed inside the wafer-level packaged structure to serve as the structure, thereby achieving high integration and high performance of the structure.

[0034] [Manufacturing Method of the First Example of a Structure] The method includes the steps of coating a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive components are disposed to form a composition layer, and performing exposure and development processing on the composition layer to form an electromagnetic wave absorbing film disposed on the substrate and located in a region at least between the plurality of passive components. As described above, the passive element is selected from the group including sensors and baluns. When the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of the following conditions 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2

[0035] Figures 5 to 7 are schematic cross-sectional views illustrating an example of the manufacturing method of the first embodiment of the structure of the present invention, arranged in the order of steps. Furthermore, in Figures 5 to 7, components identical to those shown in Figures 1 and 2 are labeled with the same symbols, and their detailed descriptions are omitted. For example, as shown in FIG. 5, sensors 12 and 14 are separately disposed on surface 20a of substrate 20. Furthermore, sensors 12 and 14 are disposed within interlayer insulating film 22. Sensors 12 and 14 are formed, for example, by a device microfabrication technique combining multiple stacking sputtering, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), photolithography, dry etching, wet etching, plasma ashing, copper plating, CMP (Chemical Mechanical Polishing) paste polishing, and wet etching. A balun transformer can also be formed in the same manner as sensors 12 and 14. Next, as shown in FIG6, a composition layer 23 is formed by coating the photosensitive composition containing the aforementioned magnetic particles onto the entire surface 20a of the substrate 20. For example, the composition layer 23 is a negative composition layer, and the unexposed areas are removed by a development process. In addition, the thickness of the composition layer 23 is not particularly limited; when it becomes an electromagnetic wave absorbing film 24 as described later, a thickness of 300 μm or less is sufficient.

[0036] Next, as shown in FIG7, a photomask 30 is disposed on the constituent layer 23. The photomask 30 has a masking portion 31a in a region other than the electromagnetic wave absorbing film 24. Exposure light Lv that exposes the constituent layer 23 is transmitted through a region 31b other than the masking portion 31a. The masking portion 31a blocks the exposure light Lv. The constituent layer 23 exposed using photomask 30 is a negative layer as described above, and the unexposed portions are removed by the developing process. That is, the exposed portions of constituent layer 23 become electromagnetic wave absorbing film 24. Since the constituent layer 23 formed at the opening 13 of sensor 12 and the opening 15 of sensor 14 are unexposed portions, they are removed, and electromagnetic wave absorbing film 24 is not formed at the opening 13 of sensor 12 and the opening 15 of sensor 14. In addition, when the constituent layer 23 is positive, since the exposed part is removed by the development process, the light-blocking area of ​​the photomask 30 is opposite to the light-blocking area of ​​the photomask 30 shown in FIG7. There are no particular limitations on the development process; any known development process can be used. Examples of developing solutions used in development processes include those containing alkaline developers and organic solvents.

[0037] After the photomask 30 is placed on the constituent layer 23 and exposed, a development process is performed to form an electromagnetic wave absorbing film 24 (see FIG1). This yields the structure 10 shown in FIG1. As described above, by means of exposure and development processes, an electromagnetic wave absorbing film 24 (see Figure 1) can be formed, and a highly integrated and high-performance structure can be easily manufactured.

[0038] [Example 2 of a struct] Figure 8 is a schematic perspective view showing a second example of the structure of an embodiment of the present invention. In Figure 8, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. The electromagnetic wave absorbing film 24 in the structure 10a shown in Figure 8 is different from the structure 10 shown in Figures 1 and 2.

[0039] Regarding structure 10a, except that an electromagnetic wave absorbing film 24 is disposed in the opening 13 of sensor 12 and the opening 15 of sensor 14, and an interlayer insulating film 22 is disposed around sensor 12 and sensor 14 on the surface 20a of substrate 20, the structure is the same as that shown in FIG1 and FIG2. By providing the electromagnetic wave absorbing film 24 at the opening 13 of sensor 12 and the opening 15 of sensor 14, the same effect as that of the structure 10 shown in Figures 1 and 2 can be obtained. Furthermore, structure 10a allows the electromagnetic wave absorbing film 24 to be smaller than that of structure 10 shown in Figures 1 and 2. Therefore, the amount of the aforementioned photosensitive components required to form the electromagnetic wave absorbing film 24 can be reduced. Furthermore, in the structure 10a of FIG8, although electromagnetic wave absorbing films 24 are provided at both the opening 13 of sensor 12 and the opening 15 of sensor 14, it is sufficient to provide electromagnetic wave absorbing films 24 on at least one of the opening 13 of sensor 12 and the opening 15 of sensor 14. In this case, it is preferable to provide electromagnetic wave absorbing films 24 on the sensor 12 and sensor 14 where high frequencies occur. In addition, unlike the above configuration, when the sensor 12, sensor 14 or balun transformer (not shown) are configured as a plurality of coil-shaped passive elements (three or more), it is sufficient to form an electromagnetic wave absorbing film 24 located at at least one opening in such coil-shaped passive elements.

[0040] [Manufacturing Method of the Second Example of a Structure] Figure 9 is a schematic cross-sectional view showing an example of a manufacturing method of a second embodiment of the structure of the present invention. In Figure 9, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are labeled with the same symbols, and their detailed descriptions are omitted. First, as shown in FIG9, sensors 12 and 14 are to be separately disposed on substrate 20, for example. An interlayer insulating film 22 is disposed on the entire surface 20a of substrate 20. Sensors 12 and 14 are disposed within the interlayer insulating film 22. The openings 13 of sensor 12 and 15 of sensor 14 are not formed with the interlayer insulating film 22. Next, the aforementioned photosensitive composition is coated onto the interlayer insulating film 22 to form a composition layer 23 on the interlayer insulating film 22. The composition layer 23 is also formed at the opening 13 of the sensor 12 and the opening 15 of the sensor 14. For example, the composition layer 23 is a negative composition layer, and the unexposed areas are removed by development processing. Next, a photomask (not shown) is disposed on the constituent layer 23. Similar to the photomask 30 shown in FIG. 7, the photomask is configured to block the exposure light Lv by the mask portion 31a. The constituent layer 23 of the opening portion 13 of the sensor 12 and the opening portion 15 of the sensor 14 is exposed by the photomask. By performing a development process after exposure, an electromagnetic wave absorbing film 24 located at the opening portion 13 of the sensor 12 and the opening portion 15 of the sensor 14, as shown in FIG. 8, is formed. Thereby, the structure 10a of FIG. 8 is obtained.

[0041] [Example 3 of a struct] Figure 10 is a schematic perspective view showing a third example of the structure of an embodiment of the present invention. In Figure 10, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. Regarding the structure 10b in FIG10, compared with the structure 10 shown in FIG1 and FIG2, except that the electromagnetic wave absorbing film 24 is arranged in the opening 13 of the sensor 12 and the opening 15 of the sensor 14, the structure is the same as that shown in FIG1 and FIG2. In addition to providing an electromagnetic wave absorbing film 24 in the region 21 between sensors 12 and 14 on the substrate 20, by providing electromagnetic wave absorbing films 24 in the openings 13 and 15 of sensors 12 and 14, sensors 12 and 14 are formed within the electromagnetic wave absorbing film 24, which can further absorb electromagnetic waves. Therefore, the influence of electromagnetic waves in sensors 12 and 14 can be further suppressed. Furthermore, although the configuration is to provide electromagnetic wave absorbing films 24 in the openings 13 and 15 of sensors 12 and 14, it is also possible to provide electromagnetic wave absorbing films 24 in either the openings 13 and 15 of sensors 12 and 14. In this case, as described above, it is preferable to provide electromagnetic wave absorbing films 24 in areas where high frequencies occur. This allows for effective shielding of electromagnetic waves. In addition, unlike the above configuration, when the sensor 12, sensor 14 or balun transformer (not shown) are configured as a plurality of coil-shaped passive elements (three or more), it is sufficient to form an electromagnetic wave absorbing film 24 located at at least one opening in such coil-shaped passive elements.

[0042] [The Manufacturing Method of the Third Example of a Structure] Figure 11 is a schematic cross-sectional view showing an example of a manufacturing method of a second embodiment of the structure of the present invention. In Figure 11, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. First, as shown in FIG11, two interlayer insulating films 22 are prepared separately on the surface 20a of the substrate 20. A sensor 12 and a sensor 14 are respectively disposed in each interlayer insulating film 22. The opening 13 of the sensor 12 and the opening 15 of the sensor 14 are not formed with interlayer insulating films 22.

[0043] Next, the aforementioned photosensitive composition is coated onto the surface 20a of the substrate 20 to cover the sensors 12 and 14, forming a composition layer 23 (see FIG. 11). The composition layer 23 is formed not only in the region 21 between the sensors 12 and 14 on the substrate 20, but also in the openings 13 of the sensors 12 and 15 of the sensors 14. For example, the composition layer 23 is a negative composition layer, and unexposed areas are removed by a development process. Next, a photomask (not shown) is disposed on the constituent layer 23. Similar to the photomask 30 shown in FIG. 7, the photomask is configured to block the exposure light Lv by the mask portion 31a. By means of the photomask, the area around the sensor 12 and the opening 13 of the sensor 12, and the area around the sensor 14 and the opening 15 of the sensor 14 are exposed in the constituent layer 23. After exposure, by performing a development process, as shown in FIG. 10, an electromagnetic wave absorbing film 24 is formed in the area 21 between the sensor 12 and the sensor 14 on the substrate 20, and an electromagnetic wave absorbing film 24 is formed in the opening 13 of the sensor 12 and the opening 15 of the sensor 14. Thereby, the structure 10b of FIG. 10 is obtained.

[0044] [Example 4 of a struct] Figure 12 is a schematic perspective view showing a fourth example of the structure of an embodiment of the present invention. In Figure 12, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. Regarding the structure 10c in FIG12, compared with the structure 10 shown in FIG1 and FIG2, except that an interlayer insulating film 22 is provided around the sensor 12 and sensor 14 on the surface 20a of the substrate 20, and an electromagnetic wave absorbing film 24 is disposed on the side of the substrate 20 opposite to the sensor 12 and sensor 14, the structure is the same as that of the structure 10 shown in FIG1 and FIG2. On the opposite side of the substrate 20, for example, an electromagnetic wave absorbing film 24 is disposed on the entire surface 22a of the interlayer insulating film 22, and the sensors 12 and 14 are covered by the electromagnetic wave absorbing film 24. By providing an electromagnetic wave absorbing film 24 covering sensors 12 and 14, electromagnetic waves emitted from sensors 12 or 14 are absorbed. This achieves the same effect as the structure 10 shown in Figures 1 and 2.

[0045] [The Manufacturing Method of the 4th Example of a Structure] Figures 13 and 14 are schematic cross-sectional views illustrating a method for manufacturing the fourth embodiment of the structure according to the steps of the present invention. In Figures 13 and 14, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are labeled with the same symbols, and their detailed descriptions are omitted. First, as shown in FIG13, sensors 12 and 14 are to be separately disposed on substrate 20, for example. Sensors 12 and 14 are disposed within interlayer insulating film 22.

[0046] Next, the aforementioned photosensitive composition is coated onto the entire surface 22a of the interlayer insulating film 22 to cover the sensor 12 and sensor 14 as shown in FIG. 14, thereby forming a composition layer 23. For example, the composition layer 23 is a negative composition layer, and the unexposed areas are removed by development processing. Next, the constituent layer 23 is exposed. After exposure, an electromagnetic wave absorbing film 24 is formed on the entire surface 22a of the interlayer insulating film 22 by performing a development process, as shown in FIG12, and the sensors 12 and 14 are covered by the electromagnetic wave absorbing film 24. Thereby, the structure 10c of FIG12 is obtained. Furthermore, the electromagnetic wave absorbing film 24 is not particularly limited to being disposed on the entire surface 22a of the interlayer insulating film 22, as long as it is disposed on the opposite side of the substrate 20 of the passive element 11. For example, the electromagnetic wave absorbing film 24 can be disposed on the opposite side of the substrate 20 of at least one of the sensors 12 and 14. In this case, the electromagnetic wave absorbing film 24 can be disposed on the entire surface of the sensors 12 and 14, but it is sufficient that it is disposed on at least one of the opening 13 of the sensor 12 and the opening 15 of the sensor 14.

[0047] [Example 5 of a structure] Figure 15 is a schematic perspective view showing the fifth example of the structure of the embodiment of the present invention. In Figure 15, the same components as the structure 10 shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. Regarding the structure 10d in FIG15, compared with the structure 10 shown in FIG1 and FIG2, except that an electromagnetic wave absorbing film 24 is disposed between the substrate 20 and the passive element 11, and the sensor 12 and sensor 14 are disposed on the interlayer insulating film 22, the structure is the same as that of the structure 10 shown in FIG1 and FIG2. An electromagnetic wave absorbing film 24 is disposed on the entire surface 20a of the substrate 20. Sensors 12 and 14 are disposed on the electromagnetic wave absorbing film 24. Electromagnetic waves can be absorbed by providing an electromagnetic wave absorbing film 24 between the substrate 20 and the passive element 11, achieving the same effect as the structure 10 shown in Figures 1 and 2.

[0048] Furthermore, sensors 12 and 14 are not limited to being disposed on the electromagnetic wave absorbing film 24, but are provided on the interlayer insulating film 22. Sensors 12 and 14 can be disposed on the electromagnetic wave absorbing film 24 without the interlayer insulating film 22. Furthermore, the electromagnetic wave absorbing film 24 is not particularly limited to being disposed between the substrate 20 and the passive element 11, as long as it is disposed on the entire surface 20a of the substrate 20. For example, the electromagnetic wave absorbing film 24 can be disposed between at least one of the sensors 12 and 14 and the substrate 20. In this case, the electromagnetic wave absorbing film 24 can be disposed on the entire surface of the sensors 12 and 14, but it is sufficient if it is disposed on at least one of the openings 13 of the sensors 12 and 15 of the sensors 14. In this way, electromagnetic waves can be effectively shielded as described above.

[0049] [The Manufacturing Method of the 5th Example of a Structure] Figures 16 and 17 are schematic cross-sectional views illustrating a method for manufacturing the fifth embodiment of the structure according to the steps of the present invention. In Figures 16 and 17, components identical to those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. First, as shown in FIG16, a composition layer 23 is formed on the entire surface 20a of the substrate 20 by coating the aforementioned photosensitive composition on the entire surface 20a of the substrate 20. For example, the composition layer 23 is a negative composition layer, and the unexposed areas are removed by development processing. Next, the entire constituent layer 23 is exposed. After exposure, an electromagnetic wave absorbing film 24 is formed on the entire surface 20a of the substrate 20 by performing a development process, as shown in FIG17. Next, sensors 12 and 14 are formed on the electromagnetic wave absorbing film 24. In this case, sensors 12 and 14 are formed within the interlayer insulating film 22. Thus, the structure 10d shown in FIG15 is obtained. Sensors 12 and 14 are formed, for example, by a combination of multiple stacking sputtering, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), photolithography, dry etching, wet etching, plasma ashing, copper plating, CMP (Chemical Mechanical Polishing) slurry polishing, and wet etching processes. Alternatively, sensors 12 and 14 may be formed directly on the electromagnetic wave absorbing film 24 instead of within the interlayer insulating film 22.

[0050] [Example 6 of a struct] Figure 18 is a schematic perspective view showing the sixth example of the structure of the embodiment of the present invention. In Figure 18, the same symbols are used for the same components as those shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4, and their detailed descriptions are omitted. Regarding the structure 10e in FIG18, compared with the structure 10 shown in FIG1 and FIG2, except that an electromagnetic wave absorbing film 24 is disposed between the substrate 20 and the passive element 11, an electromagnetic wave absorbing film 24 is disposed on the opposite side of the substrate 20 of the sensor 12 and the sensor 14, and the sensor 12 and the sensor 14 are disposed on the interlayer insulating film 22, the structure is the same as that of the structure 10 shown in FIG1 and FIG2.

[0051] An electromagnetic wave absorbing film 24 is disposed on the entire surface 20a of the substrate 20. An interlayer insulating film 22 is disposed on the entire surface 24a of the electromagnetic wave absorbing film 24, and a sensor 12 and a sensor 14 are disposed within the interlayer insulating film 22. A sensor 12 and a sensor 14 are disposed on the electromagnetic wave absorbing film 24. Furthermore, an electromagnetic wave absorbing film 24 is further disposed on the entire surface 22a of the interlayer insulating film 22. The sensor 12 and the sensor 14 are covered by the electromagnetic wave absorbing film 24. By providing an electromagnetic wave absorbing film 24 between the substrate 20 and the passive element 11, and by providing an electromagnetic wave absorbing film 24 covering the sensors 12 and 14, electromagnetic waves radiated toward the surface 20a of the substrate 20 and electromagnetic waves radiated toward the opposite side of the surface 20a of the substrate 20 can be absorbed, and electromagnetic waves with a wider range than those of the structure 10 shown in Figures 1 and 2 can be absorbed. Furthermore, structure 10e can achieve the same effect as structure 10. Also, structure 10e has more layers than structure 10.

[0052] Regarding structure 10e, as described above, the electromagnetic wave absorbing film 24 is not particularly limited to being disposed on the entire surface 22a of the interlayer insulating film 22, as long as it is disposed on the opposite side of the substrate 20 of the passive element 11. For example, the electromagnetic wave absorbing film 24 can be disposed on the opposite side of the substrate 20 of at least one of the sensors 12 and 14. In this case, the upper electromagnetic wave absorbing film 24 can be disposed on the entire surface of the sensors 12 and 14, but it is sufficient that it is disposed on at least one of the openings 13 of the sensor 12 and 15 of the sensor 14. The structure 10e in Figure 18 is a combination of the structure 10c in Figure 12 and the structure 10d in Figure 15. Furthermore, the electromagnetic wave absorbing film 24 can be configured as described above, using either the structure 10c in Figure 12 or the structure 10d in Figure 15.

[0053] [The Manufacturing Method of the 6th Example of a Structure] Figure 19 is a schematic cross-sectional view showing an example of the manufacturing method of the sixth embodiment of the structure of the present invention in the order of steps. In Figure 19, the same components as the structure 10 shown in Figures 1 and 2, the sensor 12 shown in Figure 3, and the sensor 14 shown in Figure 4 are marked with the same symbols, and their detailed descriptions are omitted. The structure 10e in Figure 18 is the same as the structure 10d shown in Figure 15, in which an electromagnetic wave absorbing film 24 is disposed on the opposite side of the substrate 20 of the sensor 12 and the sensor 14. In the configuration shown in FIG17, a composition layer 23 is formed on the interlayer insulating film 22 as shown in FIG19 by coating the aforementioned photosensitive composition onto the entire surface 22a of the interlayer insulating film 22 in which the sensors 12 and 14 are disposed internally. For example, the composition layer 23 is a negative composition layer, and the unexposed portions are removed by development processing. Next, the constituent layer 23 is exposed. After exposure, an electromagnetic wave absorbing film 24 is further formed on the interlayer insulating film 22 on which the sensors 12 and 14 are disposed by a development process, as shown in FIG18. Thereby, the structure 10e shown in FIG18 is obtained. In addition, when the sensor 12 and sensor 14 are formed on the electromagnetic wave absorbing film 24 formed on the substrate 20 without the interlayer insulating film 22, an electromagnetic wave absorbing film 24 as an upper layer is further formed on the electromagnetic wave absorbing film 24 on which the plurality of passive elements 11, such as the electromagnetic wave absorbing film 24 on which the sensor 12 and sensor 14 are formed.

[0054] In examples 1 to 6 of the aforementioned structures, when a 60 GHz high-frequency signal is input to sensor 14, the magnetic field above sensor 12 becomes, for example, as shown in Figure 20. Figure 20 also shows a configuration without an electromagnetic wave absorbing film for reference (see curve 56). As can be seen from Figure 20, the magnetic field above sensor 12 varies depending on its position within sensor 12. By providing the electromagnetic wave absorbing film 24, the magnetic field above sensor 12 can be reduced compared to the case without it. That is, by providing the electromagnetic wave absorbing film 24, the electromagnetic waves reaching sensor 12 are absorbed, the magnetic field of sensor 12 becomes smaller, and the effects of high frequencies can be reduced.

[0055] In Figure 20, curve 50 shows the configuration of an electromagnetic wave absorbing film 24 disposed in the region 21 between sensors 12 and 14 on the substrate 20 (see Figure 1). Curve 51 shows the configuration of an electromagnetic wave absorbing film 24 disposed in the opening 13 of sensor 12 and the opening 15 of sensor 14 (see Figure 8). Curve 52 shows the configuration of an electromagnetic wave absorbing film 24 disposed in the region 21 between sensors 12 and 14 on the substrate 20, as well as in the opening 13 of sensor 12 and the opening 15 of sensor 14 (see Figure 10). Curve 53 shows the configuration of an electromagnetic wave absorbing film 24 disposed above sensors 12 and 14 (see Figure 12). Curve 54 shows the configuration of an electromagnetic wave absorbing film 24 disposed between the substrate 20 and sensors 12 and 14 (see Figure 15). Curve 55 indicates the configuration of an electromagnetic wave absorbing film 24 disposed between the substrate 20 and the sensors 12 and 14, and above the sensors 12 and 14 (see Figure 18). As shown in Figure 20, the configuration of providing an electromagnetic wave absorbing film 24 at the opening 13 of sensor 12 and the opening 15 of sensor 14 (see curve 51) can reduce the magnetic field to the same extent as the configuration of providing an electromagnetic wave absorbing film 24 between the substrate 20 and the sensors 12 and 14 with a small electromagnetic wave absorbing film 24 (see curve 54).

[0056] As described above, an electromagnetic wave absorbing film 24 is provided. When the electromagnetic wave absorbing film 24 is provided on the passive element 11 of the sensor 12 and sensor 14, the electromagnetic wave absorbing film 24 can be provided directly on the passive element 11, or the aforementioned interlayer insulating film 22 can be provided between the passive element 11 and the electromagnetic wave absorbing film 24. The electromagnetic wave absorbing film 24 can be provided while the passive element 11 is surrounded by an electrically insulating layer. Thus, other layers can exist between the passive element 11 and the electromagnetic wave absorbing film 24. Furthermore, as described above, regarding the interlayer insulating film 22 and the electrical insulating layer, for example, the real part μ' of the complex permeability μ is 1, and the complex part μ” of the complex permeability μ is zero.

[0057] <Other Components> The antenna can use various antennas used in the 5G (Generation) communication standard, which utilizes a frequency band of 28GHz to 80GHz. As an antenna, for example, patch antennas, dipole antennas, and phased array antennas can be used. Antennas can be made of copper or aluminum, for example. A thickness of 20-50 μm is preferred. Furthermore, when using printed circuit boards of types such as Flame Retardant Type 1 to Type 5 (FR-1 to FR-5), the thickness of the copper wiring is standardized, and the antenna thickness is determined accordingly. Additionally, the antenna thickness can be based on the copper foil thickness of the copper-clad laminate as specified in JIS (Japanese Industrial Standards) C6484:2005 (see Table 6 of JIS C 6484:2005). Moreover, when using electroplating to form the antenna from copper, a film thickness that can be formed by electroplating is preferred.

[0058] In addition, the following are examples of semiconductor elements. Semiconductor components are not specifically limited. Examples include logic LSIs (Large Scale Integration) (e.g., ASICs (Application Specific Integrated Circuits), FPGAs (Field Programmable Gate Arrays), ASSPs (Application Specific Standard Products), etc.), microprocessors (e.g., CPUs (Central Processing Units), GPUs (Graphics Processing Units), etc.), memory (e.g., DRAMs (Dynamic Random Access Memory), HMCs (Hybrid Memory Cubes), MRAMs (Magnetic RAMs), PCMs (Phase-Change Memory), ReRAMs (Resistive RAMs), FeRAMs (Ferroelectric RAMs), flash memory (NAND flash memory), etc.), power devices, integrated circuits (e.g., DC-DC converters), etc. Current (DC) to DC (Direct Current) converters, insulated-gate bipolar transistors (IGBTs, etc.), A / D converters, MEMS (Micro Electro Mechanical Systems) (e.g., accelerometers, pressure sensors, oscillators, gyroscopes, etc.), power amplifiers, wireless (e.g.,GPS (Global Positioning System), FM (Frequency Modulation), NFC (Near Field Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), discrete components, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, CMOS (Complementary Metal Oxide Semiconductor), passive devices, bandpass filters, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), BB (Broadband), etc.

[0059] [Antenna Packaging and Antenna Packaging Manufacturing Methods] Antenna packaging is a composite of an antenna and a FEM (Front End Module). The FEM, in a wireless circuit, contains the arithmetic circuitry of the CMOS transistors that control the transmitting and receiving functions on the antenna side. For example, as shown in Figure 21, the antenna package 60 is composed of an array antenna 61, an A / D circuit 62, a memory 63, an ASIC 64, etc., stacked on the substrate 20. The array antenna 61 may have, for example, four antennas 65. For example, all four antennas 65 may be identical. The configuration of the array antenna 61 and antennas 65 is not particularly limited and can be appropriately determined based on the transmitting or receiving frequency band, the received polarization direction, etc. Furthermore, while the array antenna 61 may have four antennas 65, it is not limited to this. It may not be an array antenna 61, but rather a single antenna. In addition to the manufacturing method of the electromagnetic wave absorbing film 24, known methods can be appropriately used for antenna packaging manufacturing methods, such as antennas, A / D circuits, memory and ASICs. Furthermore, it is not limited to antenna packaging and can also be used in radar and other applications.

[0060] The manufacturing method of the photosensitive components and structures is described below. The photosensitive composition can be either negative or positive. In the case of a negative photosensitive composition, it is more likely that it does not contain the polymeric compounds described later. The photosensitive component is a component used in the formation of electromagnetic wave absorbing films. When the real part of the complex permeability μ of the electromagnetic wave absorbing film formed using the composition is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of the following conditions 1 to 3. Requirement 1: μ” in the 28GHz frequency is 0.1~10 Requirement 2: μ” in the 47GHz frequency is 0.1~5 Requirement 3: μ” in the 60GHz frequency is 0.1~2 Furthermore, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film formed using the composition can also be measured in the same way as the real part μ' and the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film described above. The following is a detailed description of the various components contained in the photosensitive composition.

[0061] [Magnetic particles] The photosensitive component contains magnetic particles. There may be one type of magnetic particle or multiple types. Magnetic particles contain metal atoms. In this specification, the metal atoms mentioned above also include half-metal atoms such as boron, silicon, germanium, arsenic, antimony, and tellurium. The aforementioned metal atoms may be contained in magnetic particles as alloys (preferably magnetic alloys), metal oxides (preferably magnetic oxides), metal nitrides (preferably magnetic oxides), or metal carbides (preferably magnetic carbides) containing metal elements. The content of metal atoms relative to the total mass of the magnetic particles is preferably 50-100% by mass, even better is 75-100% by mass, and further better is 95-100% by mass.

[0062] There are no particular limitations on the metal atoms mentioned above, but it is preferable to include at least one metal atom selected from the group consisting of Fe, Ni and Co. The content (in the case of multiple metal atoms, the total content) of at least one metal atom selected from the group including Fe, Ni, and Co, relative to the total mass of metal atoms in the magnetic particles, is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. There is no particular limitation on the upper limit of the above content; for example, 100% by mass or less, 98% by mass or less is preferred, and 95% by mass or less is even more preferred.

[0063] Magnetic particles can contain materials other than Fe, Ni, and Co. Specific examples include Al, Si, S, Sc, Ti, V, Cu, Y, Mo, Rh, Pd, Ag, Sn, Sb, Te, Ba, Ta, W, Re, Au, Bi, La, Ce, Pr, Nd, P, Zn, Zr, Mn, Cr, Nb, Pb, Ca, B, C, N, and O. When the magnetic particles contain metal atoms other than Fe, Ni and Co, it is preferable to contain one or more metal atoms selected from the group including Si, Cr, B and Mo.

[0064] Examples of magnetic particles include Fe-Co alloys (preferably Permendur), Fe-Ni alloys (e.g., high-permeability alloys), Fe-Zr alloys, Fe-Mn alloys, Fe-Si alloys, Fe-Al alloys, Ni-Mo alloys (preferably super-permeability alloys), Fe-Ni-Co alloys, Fe-Si-Cr alloys, Fe-Si-B alloys, and Fe-Si-Al alloys (preferably...). Alloys including Tristan alloys, Fe-Si-BC alloys, Fe-Si-B-Cr alloys, Fe-Si-B-Cr-C alloys, Fe-Co-Si-B alloys, Fe-Si-B-Nb alloys, Fe nanocrystalline alloys, Fe-based amorphous alloys, and Co-based amorphous alloys, as well as spinel-based ferromagnets (preferably Ni-Zn ferromagnets and Mn-Zn ferromagnets) and hexagonal ferrites (preferably barium ferromagnets and gypsum-type hexagonal ferrites). Furthermore, the above alloys can be amorphous. From the perspective of electromagnetic wave absorption performance, a superior hexagonal ferrite is the substituted gibbsite-type hexagonal ferrite, where some of the iron atoms are replaced by aluminum atoms. From the perspective of high-frequency electromagnetic wave absorption, Ba-Fe-Al alloys, Ca-Fe-Al alloys, or Pb-Fe-Al alloys, in which a portion of the alloy is replaced by Ba, Ca, or Pb, are even better. Magnetic particles can be used alone or in combination with two or more.

[0065] The surface of the aforementioned magnetic particles can be provided with a surface layer. In this way, by having a surface layer, the magnetic particles can be endowed with functions corresponding to the material of the surface layer. As a surface layer, inorganic or organic layers can be cited as examples.

[0066] There is no particular limitation on the thickness of the surface layer, but from the perspective of further maximizing the function of the surface layer, 3~1000nm is better.

[0067] The average primary particle size of the magnetic particles is preferably 20-1000 nm. From the viewpoint of dispersion and pattern resolution in the composition, the number average particle size of the magnetic particles is even better, which is 20-500 nm. The average primary particle size of the magnetic particles is measured by tracing the outlines of the particles (primary particles) using a transmission electron microscope at a magnification of 100,000 and printing the images onto photographic paper at a total magnification of 500,000. The outlines of the particles (primary particles) are then traced using a digitizer, and the diameter of a circle with the same area as the traced area (circular area diameter) is calculated. Primary particles refer to unaggregated, independent particles. The transmission electron microscope imaging is performed using a direct method at an accelerating voltage of 300 kV. For example, a Hitachi H-9000 transmission electron microscope and Carl Zeiss KS-400 image analysis software can be used for observation and measurement. The average primary particle size is calculated by arithmetically averaging the primary particle sizes of at least 100 magnetic particles measured as described above.

[0068] There are no particular restrictions on the shape of magnetic particles; they can be plate-shaped, elliptical, spherical, or irregular.

[0069] The content of the aforementioned magnetic particles relative to the total mass of the composition is preferably 20-99% by mass, more preferably 25-80% by mass, and further preferably 30-60% by mass. The content of the aforementioned magnetic particles relative to the total solid content of the composition is preferably 30-99% by mass, more preferably 30-80% by mass, and further preferably 40-70% by mass. The total solid content of the composition refers to the components constituting the magnetic pattern portion, excluding the solvent in the composition. Any component constituting the magnetic pattern portion is considered a solid component, even if it is in liquid form.

[0070] [Polymerizing compounds] Photosensitive components may contain polymeric compounds. Polymerizable compounds are compounds having polymerizable groups (photopolymerizable compounds). Examples include compounds containing groups with vinyl unsaturated bonds (hereinafter also referred to as "vinyl unsaturated groups") and compounds having epoxy groups and / or oxetane groups, with compounds containing vinyl unsaturated groups being preferred. It is preferable that the composition contains low molecular weight compounds with vinyl unsaturated groups as polymerizable compounds. The aforementioned polymerizable compounds are preferably compounds containing one or more vinyl unsaturated bonds, more preferably compounds containing two or more, even more preferably compounds containing three or more, and particularly preferably compounds containing five or more. The upper limit is, for example, 15 or less. Examples of vinyl unsaturated groups include vinyl, (methyl)allyl, and (meth)acrylyl.

[0071] The aforementioned polymerizable compounds are preferably dinepentylenetetroxide triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dinepentylenetetroxide tetraacrylate (commercially available as KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.), dinepentylenetetroxide penta(meth)acrylate (commercially available as KAYARAD D-310; manufactured by Nippon Kayaku Co., Ltd.), dinepentylenetetroxide hexa(meth)acrylate (commercially available as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., and A-DPH-12E; manufactured by Shin Nakamura Chemical Industry Co., Ltd.), and those with (meth)acrylic acid groups via ethylene glycol or propylene glycol residues (e.g., SR454 and SR499 commercially available from SARTOMER). These oligomer types can also be used. Alternatively, NK EsterA-TMMT (neopentyl tetraacrylate, manufactured by Shin Nakamura Chemical Industry Co.,LTD.), KAYARAD RP-1040, KAYARAD DPEA-12LT, KAYARAD DPHA LT, KAYARAD RP-3060, and KAYARAD DPEA-12 (all product names, manufactured by Nippon Kayaku Co.,Ltd.) can be used.

[0072] The aforementioned polymeric compounds may have acid groups such as carboxylic acid groups, sulfonic acid groups, and phosphoric acid groups. For the above-mentioned polymeric compounds containing acid groups, an acid value of 0.1~40 mgKOH / g is preferred, and 5~30 mgKOH / g is even better.

[0073] There is no particular limitation on the content of polymeric compounds in the composition, but 1 to 40% by mass relative to the total solid content of the composition is preferred, 5 to 30% by mass is more preferred, and 10 to 25% by mass is even more preferred.

[0074] The composition may include materials other than the magnetic particles and polymeric compounds mentioned above.

[0075] [Resin] The composition may include resin. Examples of resins include (meth)acrylic resins, epoxy resins, olefin-thiol resins, polycarbonate resins, polyether resins, polyarylate resins, polyurethane resins, polyether-urethane resins, polystyrene resins, polyaryl ether phosphine oxide resins, polyimide resins, polyamide-imide resins, polyolefin resins, cyclic olefin resins, polyester resins, styrene resins, and phenoxy resins. One of these resins may be used alone, or two or more may be used in combination.

[0076] Among the preferred forms of resins are resins with polymerizable groups such as unsaturated double bonds (e.g., vinyl unsaturated double bonds) and epoxy or oxobutyral groups. Furthermore, resins having acid groups, base groups, or amide groups can be cited as one of the preferred types of resins. Resins having acid groups, base groups, or amide groups readily function as dispersants for dispersing magnetic particles. Examples of acid groups include carboxyl, phosphate, sulfonic acid, and phenolic hydroxyl groups, with carboxyl being the preferred group. Examples of bases include the amino group (a group that has one hydrogen atom removed from ammonia, a primary amine, or a secondary amine) and the imine group. Among them, resins with carboxyl or amino groups are preferred.

[0077] When the resin has acid groups, an acid value of 10~500mgKOH / g is preferred, and 30~400mgKOH / g is even better.

[0078] It is preferable to use a resin with a solvent solubility of 10 g / L or more by improving the dispersibility of the resin in the composition, and it is even better to use a resin with a solvent solubility of 20 g / L or more. The upper limit of the resin's solubility in the solvent is preferably below 2000 g / L, and even better if it is below 1000 g / L. The solubility of resin in solvent refers to the amount (g) of resin that can be dissolved in 1 L of solvent at 25°C.

[0079] The resin content relative to the total mass of the composition is preferably 0.1 to 30% by mass, more preferably 1 to 25% by mass, and even more preferably 5 to 20% by mass.

[0080] One preferred form of resin is a resin that functions as a dispersant in the composition to disperse magnetic particles (hereinafter also referred to as "dispersion resin"). By using a dispersion resin, the effects of the present invention are further enhanced.

[0081] [A resin having repeating units containing grafted chains] As a dispersing resin, a resin having repeating units comprising grafted chains (hereinafter also referred to as "resin A") can be cited. Resin A can be used for purposes other than functioning as a dispersant.

[0082] When the composition includes resin A, from the viewpoint of achieving better results in this invention, it is preferable that the content of resin A is 0.1 to 30% by mass relative to the total mass of the composition, more preferably 0.5 to 20% by mass, and even more preferably 1 to 10% by mass.

[0083] • Repeating units containing graft chains In repeating units containing grafted chains, an increase in the number of grafted chains enhances the stereorepulsion effect and improves the dispersion of magnetic particles. Conversely, excessively long grafted chains reduce the adsorption force on magnetic particles, leading to a decrease in particle dispersion. Therefore, in grafted chains, a number of atoms other than hydrogen atoms of 40–10,000 is preferred, 50–2,000 is more preferred, and 60–500 is even more preferred. Among them, the grafted chain refers to the chain that extends from the root of the main chain (the atom that is bonded to the main chain in the branch group) to the end of the branch group.

[0084] Furthermore, it is preferable that the grafted chain contains a polymer structure. Examples of such polymer structures include poly(meth)acrylate structures (e.g., poly(meth)acrylic acid), polyester structures, polyurethane structures, polyurea structures, polyamide structures, and polyether structures. In order to improve the interaction between the grafted chain and the solvent, and thereby improve the dispersibility of magnetic particles, the grafted chain is preferably a grafted chain selected from at least one of the group consisting of polyester structure, polyether structure and poly(meth)acrylate structure, and is more preferably a grafted chain consisting of at least one of polyester structure and polyether structure.

[0085] Resin A can be a resin obtained by using a macromonomer containing graft chains (a monomer with a polymer structure that is bonded to the main chain to form a graft chain). There are no particular limitations on macromonomers containing grafted chains (monomers with polymer structures that are bonded to the main chain to form grafted chains), and macromonomers containing reactive double bonds can be used more effectively.

[0086] Resin A preferably comprises at least one structure selected from the group consisting of polymethyl acrylate, polymethyl methacrylate, and cyclic or chain polyesters; more preferably, it comprises at least one structure selected from the group consisting of polymethyl acrylate, polymethyl methacrylate, and chain polyesters; and even more preferably, it comprises at least one structure selected from the group consisting of polymethyl acrylate, polymethyl methacrylate, polycaprolactone, and polyvalerol structures. Resin A may comprise one of the above structures alone or may comprise a plurality of such structures. The polycaprolactone structure refers to a structure that includes the ε-caprolactone ring-opening structure as a repeating unit. The polyvalerol structure refers to a structure that includes the δ-valerol ring-opening structure as a repeating unit.

[0087] In resin A, the content of repeating units containing grafted chains relative to the total mass of resin A is preferably 2 to 100% by mass, more preferably 2 to 90% by mass, and further preferably 5 to 30% by mass. If the repeating units containing grafted chains are included within this range, the effects of the present invention are even more superior.

[0088] Hydrophobic repeating unit Furthermore, resin A may contain hydrophobic repeating units that are different from (i.e., not equivalent to) repeating units containing grafted chains. In this specification, the hydrophobic repeating unit is a repeating unit that does not have an acid group (e.g., a carboxylic acid group, a sulfonic acid group, a phosphoric acid group, a phenolic hydroxyl group, etc.).

[0089] It is preferable that the hydrophobic repeating unit is derived from a compound (monomer) with a ClogP value of 1.2 or higher, and even more preferably from a compound with a ClogP value of 1.2 to 8. This allows the effects of the present invention to be demonstrated more reliably.

[0090] The ClogP value is a value calculated using the program "CLOGP," which is available from Daylight Chemical Information System, Inc. This program provides a "Calculated LogP" value calculated using Hansch, Leo's fragmentation method (see the following literature). The fragmentation method is based on the chemical structure of a compound, dividing the chemical structure into partial structures (fragments), and calculating the compound's logP value by adding the fragments to the allocated logP contribution. Details are described in the following literature. In this specification, the ClogP value calculated using the program CLOGP v4.82 is used. AJLeo,Comprehensive Medicinal Chemistry,Vol.4,C.Hansch,PGSammnens,JBTaylor and CARamsden,Eds.,p.295,Pergamon Press,1990 C.Hansch & AJLeo.SUbstituent Constants For Correlation Analysis in Chemistry and Biology. John Wiley & Sons.AJLeo.Calculating logPoct from structure.Chem.Rev.,93,1281-1306,1993.

[0091] logP refers to the common logarithm of the partition coefficient P, and is a quantitative value representing how an organic compound is distributed in the equilibrium of a two-phase system of oil (usually 1-octanol) and water, and is expressed by the following formula. logP = log(Coil / Cwater) In the formula, Coil represents the molar concentration of the compound in the oil phase, and Cwater represents the molar concentration of the compound in the aqueous phase. If the value of logP includes 0 and increases with a positive value, then the oil solubility increases; if it increases with the absolute value of a negative value, then the water solubility increases. It is negatively correlated with the water solubility of organic compounds and is widely used as a parameter to estimate the hydrophilicity and hydrophobicity of organic compounds.

[0092] In resin A, the content of hydrophobic repeating units relative to the total mass of resin A is preferably 10-90% by mass, and even more preferably 20-80% by mass.

[0093] • Functional groups capable of interacting with magnetic particles Resin A may have functional groups that can interact with magnetic particles. It is preferable that resin A further contains repeating units comprising functional groups capable of interacting with magnetic particles. Functional groups that can interact with magnetic particles include, for example, acid groups, base groups, coordination groups, and reactive functional groups. When resin A contains acid groups, base groups, coordination groups, or reactive functional groups, it is preferable to contain repeating units containing acid groups, repeating units containing base groups, repeating units containing coordination groups, or repeating units possessing reactive functional groups, respectively.

[0094] The repeating unit containing a base-soluble group as an acid group can be the same repeating unit as the repeating unit containing the grafted chain, or it can be a different repeating unit. The repeating unit containing a base-soluble group as an acid group is a repeating unit that is different from the hydrophobic repeating unit mentioned above (that is, it is not equivalent to the hydrophobic repeating unit mentioned above).

[0095] Functional groups that can interact with magnetic particles, namely acid groups, include carboxylic acid groups, sulfonic acid groups, phosphoric acid groups, and phenolic hydroxyl groups, among which at least one of carboxylic acid groups, sulfonic acid groups, and phosphoric acid groups is preferred, with carboxylic acid groups being even more preferred. Carboxylic acid groups have good adsorption capacity for magnetic particles and high dispersibility. That is, it is preferable that resin A further contains repeating units including at least one of carboxylic acid group, sulfonic acid group and phosphoric acid group.

[0096] Resin A may have one or more repeating units containing acid groups. When resin A contains repeating units containing acid groups, its content relative to the total mass of resin A, in terms of mass conversion, is preferably 5 to 80% by mass, and even more preferably 10 to 60% by mass.

[0097] Functional groups, or bases, that can interact with magnetic particles include, for example, primary amine groups, secondary amine groups, tertiary amine groups, heterocyclic groups containing nitrogen atoms, and amide groups. From the viewpoint of good adsorption to magnetic particles and high dispersibility, tertiary amine groups are preferred. Resin A may contain one or more of these bases. When resin A contains repeating units containing bases, its content relative to the total mass of resin A, calculated by mass conversion, is preferably 0.01~50% by mass, and more preferably 0.01~30% by mass.

[0098] Examples of functional groups capable of interacting with magnetic particles, namely coordinating groups and reactive functional groups, include acetylacetoxy, trialkoxysilyl, isocyanate, acid anhydride, and acetyl chloride. From the viewpoint of good adsorption to magnetic particles and high dispersibility of magnetic particles, acetylacetoxy is a preferred functional group. Resin A may have one or more of these groups. When resin A contains repeating units with coordinating groups or repeating units with reactive functional groups, the content of such units relative to the total mass of resin A is preferably 10-80% by mass, and more preferably 20-60% by mass.

[0099] · Ethylene unsaturated group Resin A may contain vinyl unsaturated groups. There are no particular limitations on the type of unsaturated group that can be used as an ethylene group. Examples include (meth)acrylyl, vinyl, and styryl groups, with (meth)acrylyl being preferred. As resin A, it is preferable to include repeating units containing vinyl unsaturated groups in the side chains, and even more preferably, repeating units containing vinyl unsaturated groups in the side chains and derived from (meth)acrylates (hereinafter also referred to as "(meth)acrylate repeating units containing vinyl unsaturated groups in the side chains"). This is obtained by adding an vinyl unsaturated compound containing an epoxypropyl or alicyclic epoxy group to a (meth)acrylic repeating unit containing an vinyl unsaturated group in the side chain, for example, in a resin A containing a (meth)acrylic repeating unit containing a carboxylic acid group. By reacting the vinyl unsaturated group (epoxypropyl or alicyclic epoxy group) introduced in this manner, a (meth)acrylic repeating unit containing an vinyl unsaturated group can be obtained in the side chain.

[0100] When resin A contains repeating units containing vinyl unsaturated groups, its content relative to the total mass of resin A is preferably 30-70% by mass, and more preferably 40-60% by mass.

[0101] (Other repeating units) In addition, to improve various properties such as film formation performance, resin A may further include repeating units containing grafted chains, and other repeating units with various functions different from hydrophobic repeating units and repeating units containing functional groups capable of interacting with magnetic particles, without impairing the effects of the present invention. Other repeating units, for example, can be derived from repeating units derived from free radical polymerizable compounds selected from acrylonitrile and methacrylonitrile. Resin A may use one or more of these other repeating units, the content of which, relative to the total mass of resin A, is preferably 0 to 80% by mass, and more preferably 10 to 60% by mass.

[0102] Properties of Resin A There are no particular limitations on the acid value of resin A. For example, 0~400mgKOH / g is preferred, 10~350mgKOH / g is even better, 30~300mgKOH / g is further preferred, and 50~200mgKOH / g is especially preferred. When the acid value of resin A is above 50 mg KOH / g, the sedimentation stability of magnetic particles can be further improved.

[0103] In this specification, for example, the acid value can be calculated from the average content of acid groups in the compound. Furthermore, a resin with a desired acid value can be obtained by changing the content of repeating units containing acid groups in the resin.

[0104] There is no particular limitation on the weight average molecular weight of resin A, but for example, 3,000 or more is preferred, 4,000 or more is even more preferred, 5,000 or more is further preferred, and 6,000 or more is especially preferred. Furthermore, as upper limits, for example, 300,000 or less is preferred, 200,000 or less is even more preferred, 100,000 or less is further preferred, and 50,000 or less is especially preferred. Resin A can be synthesized using known methods.

[0105] Alkali-soluble resins The resin may include alkali-soluble resin. In this specification, alkali-soluble resin refers to a resin containing groups that promote alkali solubility (alkali-soluble groups, such as carboxylic acid groups or acid groups), and refers to a resin different from the resin A described herein.

[0106] Examples of alkali-soluble resins include resins containing at least one alkali-soluble group in their molecules, such as polyhydroxystyrene resin, polysiloxane resin, (meth)acrylic acid resin, (meth)acrylamide resin, (meth)acrylic acid / (meth)acrylamide copolymer, epoxy resin, and polyimide resin.

[0107] As a specific example of an alkali-soluble resin, a copolymer of unsaturated carboxylic acids and vinyl unsaturated compounds can be cited. As unsaturated carboxylic acids, there are no particular limitations. Examples include monocarboxylic acids such as (meth)acrylic acid, crotonic acid, and vinylacetic acid; dicarboxylic acids or their anhydrides such as itconic acid, maleic acid, and fumaric acid; and mono- and mono-esters of polycarboxylic acids such as phthalic acid mono(2-(meth)acryloxyethyl); etc.

[0108] Examples of vinyl unsaturated compounds capable of copolymerization include methyl methacrylate. Furthermore, compounds described in paragraphs 0027 of Japanese Patent Application Publication No. 2010-097210 and paragraphs 0036-0037 of Japanese Patent Application Publication No. 2015-068893 can also be used, and the above information is incorporated herein by reference.

[0109] Furthermore, copolymerizable vinyl unsaturated compounds can be used in combination with compounds containing vinyl unsaturated groups in their side chains. That is, alkali-soluble resins can be contained in repeating units containing vinyl unsaturated groups in their side chains. As an ethylene unsaturated group contained in the side chain, (meth)acrylic acid group is preferred. The repeating unit containing an ethylene unsaturated group in the side chain can be obtained by adding an ethylene unsaturated compound containing an epoxypropyl or alicyclic epoxy group to the carboxylic acid group of the (meth)acrylic acid repeating unit containing a carboxylic acid group.

[0110] As an alkali-soluble resin, an alkali-soluble resin containing a curing group is also preferred. Examples of such curing groups include, for example, vinyl unsaturated groups (e.g., (meth)acrylyl, vinyl and styryl) and cyclic ether groups (e.g., epoxy, oxetyl, etc.), but are not limited to these. From the perspective of controlling polymerization through free radical reactions, vinyl unsaturated groups are preferred as hardening groups, and (meth)acrylic acid groups are even better. Alkali-soluble resins containing curing groups are preferred, especially those with curing groups on their side chains. Examples of alkali-soluble resins containing curing groups include DIANAL (registered trademark) NR series (manufactured by Mitsubishi Chemical Corporation), Photomer 6173 (containing COOH polyurethane acrylic oligomer, manufactured by Diamond Shamrock Co., Ltd.), Viscoat R-264, KS resist 106 (all manufactured by Osaka Organic Chemical Industry Co., Ltd.), CYCLOMER P series (e.g., ACA230AA), PLACACCEL CF200 series (all manufactured by DAICL CORPORATION), Ebecryl 3800 (manufactured by DAICL-ALLNEX LTD.), and Acrycure RD-F8 (manufactured by NIPPON SHOKUBAI CO., LTD.).

[0111] Polyimide precursors can also be used as alkali-soluble resins. Polyimide precursors refer to resins obtained by addition polymerization of compounds containing anhydride groups and diamine compounds at 40~100°C.

[0112] There are no particular restrictions on the acid value of alkali-soluble resins, but 30~500mgKOH / g is preferred, and above 50~200mgKOH / g is even better.

[0113] When the composition contains an alkali-soluble resin, the content of the alkali-soluble resin relative to the total mass of the composition is preferably 0.1 to 40% by mass, more preferably 0.5 to 30% by mass, and further preferably 1 to 20% by mass.

[0114] [Solvent] The composition may include a solvent. Examples of solvents include water and organic solvents, with organic solvents being preferred. From a coating point of view, a boiling point of 100–400 °C is preferred, 150–300 °C is more preferred, and 170–250 °C is even more preferred. Unless otherwise specified, the boiling point in this specification refers to the standard boiling point.

[0115] Examples of organic solvents include acetone, methyl ethyl ketone, cyclohexane, ethyl acetate, dichloroethylene, tetrahydrofuran, toluene, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, acetone, cyclohexanone, cyclopentanone, diacetone alcohol, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether acetate, and 1,4-butanediol diacetate. 3-Methoxypropanol, methoxymethoxyethanol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, 3-methoxypropyl acetate, N,N-dimethylformamide, dimethyl sulfoxide, γ-butyrolactone, ethyl acetate, butyl acetate, methyl lactate, N-methyl-2-pyrrolidone, and ethyl lactate, etc., but not limited to these.

[0116] From the viewpoint of achieving better results with respect to the present invention, it is preferable that the solvent content is 1 to 60% by mass relative to the total mass of the composition, more preferably 2 to 50% by mass, and even more preferably 3 to 40% by mass.

[0117] [Polymerization initiator] The composition may contain a polymerization initiator. There are no particular limitations on the polymerization initiator, and any known polymerization initiator can be used. Examples of polymerization initiators include photopolymerization initiators and thermal polymerization initiators, with photopolymerization initiators being preferred. Furthermore, free radical polymerization initiators are preferred. There is no particular limitation on the content of the polymerization initiator in the composition. 0.5 to 15% by mass is preferred, 1.0 to 10% by mass is more preferred, and 1.5 to 8.0% by mass is even more preferred relative to the total solid content of the composition.

[0118] When the composition is a positive photosensitive composition, it is preferable that the composition includes phenolic varnish resin and a compound containing a quinone diazide group. Phenolic varnish resin is a resin obtained by condensing phenols and aldehydes using an acid catalyst. Examples of phenolic varnish resins include phenolic varnish resin, cresol varnish resin, xylenol varnish resin, resorcinol varnish resin, and naphthol varnish resin. As a quinone diazido group, compounds containing a quinone diazido group can have, for example, a 1,2-quinone diazido group, a 1,2-naphthoquinone diazido group, etc.

[0119] [Other arbitrary ingredients] The composition may further include any other components besides those mentioned above. For example, surfactants, polymerization inhibitors, antioxidants, sensitizers, co-sensitizers, crosslinking agents (curing agents, such as hexamethoxymelamine), curing accelerators, thermosetting accelerators, plasticizers, diluents, lipophilic agents, and rubber components may be added as needed. In addition, known additives such as adhesion promoters and other auxiliaries (e.g., defoamers, flame retardants, leveling agents, peel accelerators, antioxidants, fragrances, surface tension modifiers, and chain transfer agents) may be added as required.

[0120] <<Surfactants>> Examples of surfactants include fluorinated surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and silicone surfactants. Regarding surfactants, examples include those described in paragraphs 0238 to 0245 of International Publication No. 2015 / 166779, the contents of which are incorporated herein by reference.

[0121] [Manufacturing methods for structures] The manufacturing method of the structure of the present invention includes the following steps 1 and 2. Step 1: The step of forming a composition layer by coating a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive components are disposed, or on a substrate before which the plurality of passive components are disposed. Step 2: The process of exposing and developing the constituent layers to form an electromagnetic wave absorbing film. The following is a detailed description of the order of steps 1 and 2.

[0122] [Step 1] In step 1, a composition layer is formed by coating a photosensitive component containing magnetic particles onto a substrate on which a plurality of passive elements are disposed, or onto a substrate prior to the disposal of the plurality of passive elements. Furthermore, the composition layer can be formed at the locations shown in the manufacturing methods of the various examples of the structures described above. The components used are as described above.

[0123] There are no particular restrictions on the coating method of the composition. Various coating methods can be cited, such as slot coating, inkjet coating, spin coating, cast coating, roller coating, and screen printing. After coating, drying can be performed as needed. Drying (pre-baking) can be carried out, for example, in a heated plate, oven, etc., at a temperature of 50~140°C for 10~1800 seconds. The thickness of the constituent layer is preferably 1~10000 μm, more preferably 10~1000 μm, and even more preferably 15~800 μm.

[0124] [Step 2] Step 2 is the step of performing exposure and development processes on the constituent layer to form an electromagnetic wave absorbing film. There are no particular limitations on the exposure process, but it is preferable to irradiate the photomask through a photomask layer with patterned openings. The patterned openings of the photomask are configured to form an electromagnetic wave absorbing film with the predetermined shape described above. Exposure is preferably performed by irradiation with radiation. Ultraviolet radiation, such as gamma rays, h-rays, and i-rays, is preferred for exposure, and a high-pressure mercury lamp is preferred as the light source. An irradiation intensity of 5–1500 mJ / cm² is preferred, and 10–1000 mJ / cm² is even better.

[0125] It is better to perform heat treatment (post-baking) after exposure treatment. Post-baking is a heat treatment used after development to ensure complete hardening. A heating temperature below 240°C is preferred, and below 220°C is even better. There is no specific lower limit, but for efficient and effective processing, temperatures above 50°C are preferred, and above 100°C are even better. Heating mechanisms such as heating plates, convection ovens (hot air circulating dryers), and high-frequency heaters can be used for continuous or intermittent post-baking.

[0126] There are no particular restrictions on the type of developer used in the developing process, but it is desirable to use an alkaline developer that will not cause damage to circuits, etc. The developing temperature is, for example, 20~30℃. The development time is, for example, 20 to 90 seconds. In recent years, 120 to 180 seconds has sometimes been implemented to better remove residue. In addition, to further improve residue removal, the process of repeatedly spitting out the developer every 60 seconds and then supplying fresh developer is sometimes repeated.

[0127] As an alkaline developer, an alkaline aqueous solution prepared by dissolving an alkaline compound in water to a concentration of 0.001 to 10% by mass (preferably 0.01 to 5% by mass) is preferred. Examples of alkaline compounds include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, pyrrole, piperidine, and 1,8-diazabicyclo[5.4.0]-7-undecene (among which, organic bases are preferred). In addition, when used as an alkaline developer, it is generally rinsed with water after development.

[0128] The present invention is essentially constructed as described above. The structure, manufacturing method, and components of the present invention have been described in detail above; however, the present invention is not limited to the above embodiments, and various improvements or modifications can be made without departing from the spirit of the invention. [Example]

[0129] The following examples illustrate the features of the present invention in more detail. The materials, reagents, quantities, proportions, and operations shown in the following examples can be appropriately modified without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the following examples. In this embodiment, a configuration is used in which sensor 14 (see FIG. 1) and sensor 12 (see FIG. 1) are separately arranged on a substrate. The substrate size is set to 700μm × 300μm. Regarding sensor 14, its shape is set to octagonal, with a maximum outer width of 110 μm and a maximum inner width of 80 μm. Sensor 14 has an opening similar in shape to its outer shape, and the opening is octagonal. The maximum width of the opening is set to 56 μm. The thickness of the strip member of sensor 14 is set to 2μm, and the width is set to 15μm. Furthermore, the width of the input section of sensor 14 is set to 20 μm. The number of turns of sensor 14 is set to 1.75 turns, and the gap between turns is set to 5 μm. The resonant frequency of sensor 14 is 60 GHz.

[0130] Regarding sensor 12, its shape is octagonal, with a maximum outer width of 110 μm and a maximum inner width of 80 μm. The thickness of the strip-shaped member of sensor 12 is 2 μm, and its width is 15 μm. Sensor 12 has an opening similar in shape to its outer shape, and the opening is octagonal. The maximum width of the opening is 56 μm. The distance between the center of the opening of sensor 14 and the center of the opening of sensor 12 is set to 125 μm. Both sensor 14 and sensor 12 are positioned at a distance of 6.7 μm from the surface of the substrate.

[0131] [Electric field decay and magnetic field decay] In Examples 1-30 and Comparative Examples 1-3, the electric and magnetic fields generated at a high frequency when a 60 GHz high-frequency signal is supplied to the sensor 14 were measured at the location of the sensor 12. Furthermore, the electric and magnetic fields were evaluated based on the volume of the electromagnetic wave absorbing film. Regarding electric and magnetic field attenuation, the cumulative values ​​of the electric and magnetic fields at a distance of 125 μm were calculated in dB (decibels) when a high-frequency signal of 60 GHz was supplied to sensor 14. The calculated values ​​were negative. Furthermore, the 125 μm distance corresponds to the center of the sensor's opening. The cumulative values ​​of the electric and magnetic fields are calculated by using the RF module of COMSOL Multiphysics (registered trademark), the physical study of electromagnetic waves (frequency region), and solving the Hamholz wave equation shown in Equations (a) and (b) below. Furthermore, in formulas (a) and (b) below, j represents an imaginary number. Specifically, εr = ε' - ε” × j, where ε' is the real part of the dielectric constant and ε” is the imaginary part of the dielectric constant. μr = μ' - μ” ×j, where μ” is the real part of the permeability and μ” is the imaginary part of the permeability. k0 = Ω(μ0·ε0)1 / 2(m-1), where Ω is the angular velocity, i is the current, μ0 is the permeability of vacuum, and ε0 is the permittivity of vacuum. η0 = (μ0·ε0)1 / 2(Ω). μ 0 =1.257 × 10 -6 (H / m), ε 0 = 8.854 × 10 -12 (F / m).

[0132] [Mathematical Expression 1]

[0133] [Mathematical Expression 2]

[0134] The cumulative value of the electric field (dB) is calculated by dividing the volume of the electromagnetic wave absorbing film (mm³) by the following evaluation criteria. Furthermore, the cumulative value of the magnetic field (dB) divided by the volume (mm³) of the electromagnetic wave absorbing film was evaluated according to the following evaluation criteria. Evaluation criteria A: Less than -3000 (dB / mm³) B: Above -3000 and less than -150 (dB / mm³) C: Above -150 and less than -10 (dB / mm³) D: -10 or higher (dB / mm³) In addition, for Examples 21, 22, 23, 24, and 27-30, as shown in Tables 10 and 11 respectively, the 60GHz frequency was changed to 47GHz and 28GHz, and the above measurements were performed.

[0135] [Adjacent arrangement of electromagnetic wave absorbing films] Furthermore, the ability to form an electromagnetic wave absorbing film at a predetermined position relative to sensor 12 and sensor 14 is defined as being able to be arranged adjacently, and is described as "configurable" in Tables 7 to 12 below. On the other hand, those that cannot form an electromagnetic wave absorbing film at a predetermined position relative to sensor 12 and sensor 14 are defined as not being able to be arranged adjacently, and are recorded as "cannot be arranged" in Tables 7 to 12 below.

[0136] <Examples 1-30, Comparative Examples 1-3> The various components shown in Tables 1-6 were mixed to prepare the compositions. The ingredients used are as follows. (Magnetic particles) • Barium ferromagnet-1: synthesized by the following method. 400.0 g of water, kept at 35°C, was stirred. During the stirring process, 57.0 g of ferric chloride (III) hexahydrate [FeCl3·6H2O], 25.4 g of barium chloride dihydrate [BaCl2·2H2O], and 10.2 g of aluminum chloride hexahydrate [AlCl3·6H2O] were dissolved in 216.0 g of water at a flow rate of 10 mL / min and at the same time of addition. A solution was also prepared by adding 181.3 g of a 5 mol / L sodium hydroxide aqueous solution to 113.0 g of water. This yielded the first solution. Next, after setting the temperature of the first solution to 25°C, 39.8 g of a 1 mol / L sodium hydroxide aqueous solution was added to maintain this temperature, resulting in the second solution. The pH of the obtained second solution was 10.5 ± 0.5. The pH was measured using a benchtop pH meter (HORIBA, Ltd., F-71). Next, the second liquid was stirred for 15 minutes to obtain a liquid containing a precipitate of a precursor that becomes a magnetite-type hexagonal ferrite (liquid containing precursor). Next, the liquid containing the precursor was centrifuged three times (rotation speed: 2000 rpm, rotation time: 10 minutes), and the obtained precipitate was recovered and washed with water. Next, the recovered precipitate was dried for 12 hours in an oven with an internal ambient temperature of 95°C to obtain the precursor powder. Next, the precursor powder was placed in a regenerating furnace, and the furnace temperature was set to 1100°C under atmospheric conditions. The calcined block was obtained by calcining for 4 hours. Next, a cutter (Wonder Crusher WC-3 manufactured by OSAKA CHEMICAL Co., Ltd.) was used as a pulverizer. The speed dial of the pulverizer was set to "5" (speed: approximately 10,000 to 15,000 rpm), and the obtained calcined body was pulverized for 90 seconds to obtain magnetic powder (barium iron magnet-1).

[0137] The crystal structure of the magnetic material constituting the aforementioned magnetic powders was confirmed by X-ray diffraction analysis. A powder X-ray diffraction apparatus, namely the PANalytical X'Pert Pro, was used as the measuring device. The measurement conditions are shown below. -Measurement Conditions- X-ray source: CuKα rays [Wavelength: 1.54Å (0.154nm), Output: 40mA, 45kV] Scan range: 20° < 2θ < 70° Scan interval: 0.05° Scanning speed: 0.75° / min The results of the X-ray diffraction analysis confirmed that the obtained magnetic powder has a magnetite-type crystal structure, which is a magnetite-type hexagonal ferrite powder that does not contain a single phase of crystal structure other than magnetite-type.

[0138] • Barium ferromagnet-2: synthesized by the following method. The microparticle pulverization step was carried out using BMXF-5 and BGRIMM (Beljing General Research Institute of Mining & Metallurgy) magnetic materials. Specifically, the above-mentioned magnetic powder (50g), water (100g), and 1mm diameter zirconium beads (500g) were placed into a 250ml polyethylene bottle (sealed with Teflon, a registered trademark) and stirred for 18 hours using a paint shaker. The mixture was filtered through a nylon mesh PA-77μm (AS ONE) and the filtrate was recovered. After washing several times with water, the supernatant was removed, and the mixture was dried in a drying oven at 80°C for 8.5 hours to obtain barium ferromagnet-2. • Barium ferromagnet-3: synthesized by the following method. Using MC-617 (manufactured by Toda Kogyo Corporation) magnetic material, barium ferromagnet-3 was obtained by performing a micronization step in the same manner as barium ferromagnet-2 described above.

[0139] • Strontium ferromagnets: synthesized by the following methods. Using Wonder Crush / Mill (WDL-1 type: manufactured by OSAKA CHEMICAL Co., Ltd.), 46.3 g of strontium carbonate (SrCO3; manufactured by FUJIFILM Wako Pure Chemical Corporation), 255.1 g of α-ferric oxide (III) (α-Fe2O3; manufactured by FUJIFILM Wako Pure Chemical Corporation), and 14.8 g of aluminum oxide (Al2O3; manufactured by FUJIFILM Wako Pure Chemical Corporation, average particle size: 40 nm) were stirred for 2 minutes. 300g of water and 30.0g of flux (strontium chloride 6-hydrate [SrCl 2·6H 2O; manufactured by FUJIFILM Wako Pure Chemical Corporation]) were added to the obtained mixture. After stirring for 30 minutes using a mixing mixer (7011HSJ type, manufactured by WARING Corporation), the mixture was dried in a drying apparatus with an internal ambient temperature of 95°C. Next, using the aforementioned Wonder Crush / Mill, the dried mixture was stirred and pulverized for 2 minutes to obtain a precursor for the magnetic powder. The obtained precursor was placed in a regenerating furnace, and under atmospheric conditions, the furnace temperature was set to 1250°C for 4 hours to obtain a sintered body. The sintered body obtained by stirring and pulverizing with the aforementioned Wonder Crush / Mill for 2 minutes was repeatedly washed with water and then dried in a drying apparatus with an internal ambient temperature of 95°C. Then, magnetic powder was obtained by stirring and crushing with the Wonder Crush / Mill for 2 minutes.

[0140] • Rare earth-iron-nitrogen magnetic materials: synthesized by the method described in International Publication No. 2008 / 136391. • Yttrium iron magnet: After being cast by the method described in Volume 50, No. 1, pp. 63-67 of "Powder Metallurgy", it is crushed into particles with a diameter of 3 μm. • ε-type iron oxide: synthesized by the method described in Japanese Patent Application Publication No. 2016-111341. •Fe-Mn ferromagnets: synthesized by the following method. Fe-Mn ferromagnets were obtained by performing a micronization process using M05S (manufactured by Powdertech Co., Ltd.) magnetic material in the same manner as that used for barium ferromagnet-2. The average primary particle size of the Fe-Mn ferromagnets was 100 nm. Ni-Fe based magnetic materials: synthesized by the following method. It is a nickel-iron alloy powder produced by vapor-phase reduction with a composition ratio of Ni:87% and Fe:13%. The average primary particle size of the Ni-Fe magnetic material is 100 nm. • Nickel-zinc-iron magnet: synthesized by the method described in Japanese Patent Application Publication No. 2001-053483.

[0141] (Dispersant) • X-1: Resin represented by the following structural formula. The values ​​in each repeating unit in the following formula represent the content (mass %) relative to all repeating units.

[0142] [Chemical Formula 1] • X-2: The resin represented by the following structural formula. The values ​​in each repeating unit in the following formula represent the content (mass %) relative to all repeating units.

[0143] [Chemical Formula 2]

[0144] (resin) •B-1: The resin represented by the following structural formula. The values ​​in each repeating unit in the following formula represent the content (mass %) relative to all repeating units.

[0145] [Chemical Formula 3]

[0146] • B-2:CYCLOMER P(ACA)230AA (manufactured by DAICEL CHEMICAL INDUSTRIES, LTD.) B-3: Phenolic varnish resin In addition, B-1 and B-2 mentioned above are equivalent to alkali-soluble resins.

[0147] (polymeric compounds) • KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd., a mixture of dinepentylene terephthalate hexaacrylate and dinepentylene terephthalate pentaacrylate) KAYARAD RP-1040 (manufactured by Nippon Kayaku Co., Ltd., 4-functional acrylate) • NK ester A-TMMT (manufactured by Shin Nakamura Chemical Industry Co.,LTD., a multifunctional acrylate) • Hexamethoxymethyl melamine (manufactured by SANWA CHEMICAL CO.,LTD.)

[0148] (Polymerization initiator) • Irgacure OXE-01 (manufactured by BASF JAPAN, oxime ester initiator) • Compounds with the following structure (1)

[0149] [Chemical Formula 4]

[0150] (Photosensitive materials) Benzophenone derivatives: 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone diazido-5-sulfonate (2S: two of the three hydroxyl groups are substituted, and one is H) as described in paragraph 0037 of Japanese Patent Application Publication No. 2002-040651.

[0151] (Antioxidants) • p-Methoxyphenol (Sanritsu Chemicals, All Rights Reserved.) • ADEKA STAB AO-80 (manufactured by ADEKA CORPORATION, a compound with the following structure)

[0152] [Chemical Formula 5]

[0153] (surfactants) • KF-6001 (manufactured by Shin-Etsu Chemical Co., Ltd., a methanol-modified polydimethylsiloxane with two ends, hydroxyl value 62 mg KOH / g) • Polyfox PF6320 (manufactured by OMNOVA Solutions Inc., a fluorinated surfactant)

[0154] (solvent) •PGMEA (Propylene Glycol Monomethyl Ether Acetate)

[0155] The aforementioned composition was coated onto a substrate on which sensors 12 and 14 were disposed to form a composition layer. Then, the composition layer was dried at 100°C for 2 minutes. Furthermore, regarding the thickness of the composition layer, the coating amount was adjusted so that the thickness of the electromagnetic wave absorbing film as shown in Table 1 was 30 μm. The substrate was a silicon substrate. Next, the constituent layer was exposed using a USHIO simple exposure apparatus at a temperature of 10 mJ / cm² through a mask with a predetermined opening, to form the electromagnetic wave absorbing film shown in FIG8. As shown in FIG8, when the electromagnetic wave absorbing film is disposed at the openings of the sensors 12 and 14 respectively, it is designated as "inner" in Tables 1 to 6 below. After exposure, a simple developing apparatus (manufactured by Mikasa Corporation) was used for spray development at 23°C for 60 seconds. Additionally, a 0.3% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) was used in the developing solution. After development, a rinsing process using a rotating spray of pure water was performed. Then, after rotation drying, a heating treatment was carried out for 5 minutes using a heating plate at 220°C (post-baking) to form an electromagnetic wave absorbing film of a predetermined shape.

[0156] (Examples 2-30) Except for changing various conditions such as the type of pattern, the average primary particle size of the magnetic particles, and the film thickness of the magnetic pattern portion to those shown in Tables 1 to 6 below, a structure having a magnetic pattern portion was manufactured in the same order as in Example 1. The results of each embodiment are summarized in the table described below. In addition, in Examples 2 to 9, the electromagnetic wave absorbing film is configured as shown in Figure 8, and is the same as in Example 1. In Examples 10 and 11, the electromagnetic wave absorbing film is configured as shown in Figure 1. As shown in Figure 1, when an electromagnetic wave absorbing film is disposed between sensor 12 and sensor 14, it is designated as "external" in Tables 1-6 below. In Examples 12 and 13, the electromagnetic wave absorbing film configuration shown in Figure 10 is adopted. The configuration of the electromagnetic wave absorbing film shown in Figure 10 is a combination of the configuration of the electromagnetic wave absorbing film shown in Figure 1 and the configuration of the electromagnetic wave absorbing film shown in Figure 8, and is designated as "inner + outer" in Tables 1 to 6 below.

[0157] In Examples 14 and 15, the electromagnetic wave absorbing film is configured as shown in Figure 12. As shown in Figure 12, when the electromagnetic wave absorbing film is configured on the sensor 12 and the sensor 14, it is designated as "on top" in Tables 1 to 6 below. In Examples 16 and 17, the electromagnetic wave absorbing film is configured as shown in FIG15. As shown in FIG15, when the electromagnetic wave absorbing film is configured below the substrate, sensor 12, and sensor 14, it is designated as "below" in Tables 1 to 6 below. In Examples 18-20, the electromagnetic wave absorbing film is configured as shown in Figure 18. The configuration of the electromagnetic wave absorbing film shown in Figure 18 is a combination of the configurations of the electromagnetic wave absorbing film shown in Figure 12 and Figure 15, and is designated as "upper + lower" in Tables 1-6 below. In Examples 21-30, the electromagnetic wave absorbing film is configured as shown in Figure 8, and is the same as in Example 1. In Examples 25, 27, and 29, there are two types of magnetic particles, and their respective particle sizes are recorded in the column for magnetic particle size. The particle size of the upper section of magnetic particles is recorded on the left, and the particle size of the lower section of magnetic particles is recorded on the right.

[0158] (Comparative Examples 1-3) In Comparative Example 1, everything was the same as in Example 1 except that magnetic particles were not used. In Comparative Example 1, since magnetic particles were not used, no electromagnetic wave absorbing film was formed. In Comparative Example 2, as shown in the structure 100 in FIG22, the electromagnetic wave absorbing film of Example 1 is composed of a copper layer 102. The copper layer 102 has a thickness of 10 μm and has quadrilateral openings 102a in the regions of sensor 12 and sensor 14. The dimensions of the openings 102a are V1 × V2. V1 is set to 165 μm and V2 is set to 155 μm. The copper layer is formed by repeatedly performing steps such as stacking sputtering, photolithography, dry etching, plasma ashing, copper plating, CMP paste polishing and wet etching, and by using component microfabrication technology. In addition, in the structure 100 shown in Figure 22, the same symbols are used for the same components as those in the structure 10 shown in Figures 1 and 2, and their detailed descriptions are omitted. In Comparative Example 3, except that a nickel-zinc ferromagnet was used in the magnetic particles and the complex part μ” of the complex permeability μ was zero at 60 GHz, 47 GHz and 28 GHz, it was set to be the same as in Example 1.

[0159] The complex part μ of the complex permeability μ of the electromagnetic wave absorbing film was measured by the following method. As the measurement equipment, a vector network analyzer (product name: N5225B) from Keysight Technologies, Inc. and horn antennas (product names: RH12S23, RH06S10) from KEYCOM Corporation were used. Next, using the free-space method, with the incident angle set to 0° and the scanning frequency band set to 55.0 GHz to 95.0 GHz, and with one plane of each electromagnetic wave absorbing film facing the incident side, S-parameter measurements were performed every 0.1 GHz to determine the complex part μ of the complex permeability μ at 60 GHz. By changing the scanning frequency band, the complex parts μ of the complex permeability μ at 28 GHz and 47 GHz were determined. The "Size of Magnetic Particles" column in Tables 1-6 indicates the average primary particle size of the magnetic particles.

[0160] [Table 1] Example Example Example Example Example Example 1 2 3 4 5 6 Magnetic particles Barium Ferromagnetic-1 39.23 39.23 39.23 39.23 39.23 39.23 Barium Ferromagnetic-2 Barium Ferromagnetic-3 Strontium ferromagnet Rare earth-iron-nitrogen magnetic materials Yttrium iron magnets ε-type iron oxide Fe-Mn ferromagnetic materials Ni-Fe based magnetic material Nickel-zinc iron magnet dispersant X-1 7.06 7.06 7.06 7.06 7.06 X-2 7.06 resin B-1 3.24 1.74 4.24 3.24 3.24 B-2 3.24 B-3 polymeric compounds KAYARAD DPHA 15.05 16.55 14.05 15.05 KAYARAD RP-1040 15.05 NK ester A-TMMT 15.05 Hexamethoxymethyl melamine Polymerization initiator Irgacure OXE-01 3.76 3.76 3.76 3.76 3.76 3.76 Compound (1) Photosensitive materials Benzophenone derivative DNQ antioxidants p-Methoxyphenol 0.01 0.01 0.01 0.01 0.01 0.01 ADEKA STAB AO-80 surfactants KF-6001 0.04 0.04 0.04 0.04 0.04 0.04 Polyfox PF6320 solvent PGMEA 31.61 31.61 31.61 31.61 31.61 31.61 Total (parts by weight) 100 100 100 100 100 100 Configuration of electromagnetic wave absorbing film Inside Inside Inside Inside Inside Inside Size of magnetic particles 100nm 100nm 100nm 100nm 100nm 100nm Film thickness 30μm 30μm 30μm 30μm 30μm 30μm μ” at 60GHz 0.48 0.48 0.48 0.48 0.48 0.48 μ” at 47GHz 0 0 0 0 0 0 μ” at 28GHz 0 0 0 0 0 0 Paint conditions 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes Exposure conditions 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² Display conditions 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds Baking conditions 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes

[0161] [Table 2] Example Example Example Example Example Example 7 8 9 10 11 12 Magnetic particles Barium Ferromagnetic-1 39.23 39.23 39.23 39.23 Barium Ferromagnetic-2 Barium Ferromagnetic-3 Strontium ferromagnet 39.23 39.23 Rare earth-iron-nitrogen magnetic materials Yttrium iron magnets ε-type iron oxide Fe-Mn ferromagnetic materials Ni-Fe based magnetic material Nickel-zinc iron magnet dispersant X-1 7.06 7.06 7.06 7.06 7.06 7.06 X-2 Alkali-soluble resins B-1 3.24 3.24 3.24 3.24 3.24 3.24 B-2 B-3 polymeric compounds KAYARAD DPHA 15.05 15.05 15.05 15.05 15.05 15.05 KAYARAD RP-1040 NK ester A-TMMT Hexamethoxymethyl melamine Polymerization initiator Irgacure OXE-01 3.76 3.76 3.76 3.76 3.76 3.76 Compound (1) Photosensitive materials Benzophenone derivative DNQ antioxidants p-Methoxyphenol 0.01 0.01 0.01 0.01 ADEKA STAB AO-80 0.01 0.01 surfactants KF-6001 0.04 0.04 0.04 0.04 0.04 Polyfox PF6320 0.04 solvent PGMEA 31.61 31.61 31.61 31.61 31.61 31.61 Total (parts by weight) 100 100 100 100 100 100 Configuration of electromagnetic wave absorbing film Inside Inside Inside outside outside Inside + outside Size of magnetic particles 100nm 100nm 100nm 100nm 100nm 100nm Film thickness 30μm 30μm 30μm 30μm 30μm 30μm μ” at 60GHz 0.48 0.48 0.49 0.48 0.49 0.48 μ” at 47GHz 0 0 0 0 0 0 μ” at 28GHz 0 0 0 0 0 0 Coating conditions 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes Exposure conditions 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² Development conditions 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds Baking conditions 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes

[0162] [Table 3] Example Example Example Example Example Example 13 14 15 16 17 18 Magnetic particles Barium Ferromagnetic-1 39.23 39.23 39.23 Barium Ferromagnetic-2 Barium Ferromagnetic-3 Strontium ferromagnet 39.23 39.23 39.23 Rare earth-iron-nitrogen magnetic materials Yttrium iron magnets ε-type iron oxide Fe-Mn ferromagnetic materials Ni-Fe based magnetic material Nickel-zinc iron magnet dispersant X-1 7.06 7.06 7.06 7.06 7.06 7.06 X-2 resin B-1 3.24 3.24 3.24 3.24 3.24 3.24 B-2 B-3 polymeric compounds KAYARAD DPHA 15.05 15.05 15.05 15.05 15.05 15.05 KAYARAD RP-1040 NK ester A-TMMT Hexamethoxymethyl melamine Polymerization initiator Irgacure OXE-01 3.76 3.76 3.76 3.76 3.76 3.76 Compound (1) Photosensitive materials Benzophenone derivative DNQ antioxidants p-Methoxyphenol 0.01 0.01 0.01 0.01 0.01 0.01 ADEKA STAB AO-80 surfactants KF-6001 0.04 0.04 0.04 0.04 0.04 0.04 Polyfox PF6320 solvent PGMEA 31.61 31.61 31.61 31.61 31.61 31.61 Total (parts by weight) 100 100 100 100 100 100 Configuration of electromagnetic wave absorbing film Inside + outside superior superior Down Down Up + Down Size of magnetic particles 100nm 100nm 100nm 100nm 100nm 100nm Film thickness 30μm 30μm 30μm 30μm 30μm 30μm μ” at 60GHz 0.49 0.48 0.49 0.48 0.49 0.48 μ” at 47GHz 0 0 0 0 0 0 μ” at 28GHz 0 0 0 0 0 0 Coating conditions 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes Exposure conditions 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² Development conditions 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds Baking conditions 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes

[0163] [Table 4] Example Example Example Example Example Example 19 20 twenty one twenty two twenty three twenty four Magnetic particles Barium Ferromagnetic-1 39.23 Barium Ferromagnetic-2 39.23 Barium Ferromagnetic-3 39.23 Strontium ferromagnet 39.23 Rare earth-iron-nitrogen magnetic materials Yttrium iron magnets ε-type iron oxide Fe-Mn ferromagnetic materials 39.23 Ni-Fe based magnetic material 39.23 Nickel-zinc iron magnet dispersant X-1 7.06 7.06 7.06 7.06 7.06 7.06 X-2 resin B-1 3.24 3.24 3.24 3.24 3.24 B-2 B-3 13.6 polymeric compounds KAYARAD DPHA 15.05 15.05 15.05 KAYARAD RP-1040 15.05 15.05 NK ester A-TMMT Hexamethoxymethyl melamine 3.68 Polymerization initiator Irgacure OXE-01 3.76 3.76 3.76 3.76 3.76 Compound (1) Photosensitive materials Benzophenone derivative DNQ 4.77 antioxidants p-Methoxyphenol 0.01 0.01 0.01 0.01 0.01 0.01 ADEKA STAB AO-80 surfactants KF-6001 0.04 0.04 0.04 0.04 0.04 0.04 Polyfox PF6320 solvent PGMEA 31.61 31.61 31.61 31.61 31.61 31.61 Total (parts by weight) 100 100 100 100 100 100 Configuration of electromagnetic wave absorbing film Up + Down Up + Down Inside Inside Inside Inside Size of magnetic particles 100nm 100nm 100nm 100nm 100nm 100nm Film thickness 30μm 30μm 30μm 30μm 30μm 30μm μ” at 60GHz 0.49 0.48 0 0 0 0 μ” at 47GHz 0 0 0.70 0 0 0 μ” at 28GHz 0 0 0 0.79 0.2 0.1 Coating conditions 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes Exposure conditions 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² Development conditions 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds Baking conditions 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes

[0164] [Table 5] Example Example Example Example Example Example 25 26 27 28 29 30 Magnetic particles Barium Ferromagnetic-1 Barium Ferromagnetic-2 30.51 Barium Ferromagnetic-3 32.98 Strontium ferromagnet Rare earth-iron-nitrogen magnetic materials 3.09 39.23 Yttrium iron magnets 6.25 39.23 ε-type iron oxide 8.72 39.23 Fe-Mn ferromagnetic materials 36.14 Ni-Fe based magnetic material Nickel-zinc iron magnet dispersant X-1 7.06 7.06 7.06 7.06 7.06 7.06 X-2 resin B-1 3.24 3.24 3.24 3.24 3.24 3.24 B-2 B-3 polymeric compounds KAYARAD DPHA KAYARAD RP-1040 15.05 15.05 15.05 15.05 15.05 15.05 NK ester A-TMMT Hexamethoxymethyl melamine Polymerization initiator Irgacure OXE-01 3.76 3.76 3.76 3.76 3.76 3.76 Compound (1) Photosensitive materials Benzophenone derivative DNQ antioxidants p-Methoxyphenol 0.01 0.01 0.01 0.01 0.01 0.01 ADEKA STAB AO-80 surfactants KF-6001 0.04 0.04 0.04 0.04 0.04 0.04 Polyfox PF6320 solvent PGMEA 31.61 31.61 31.61 31.61 31.61 31.61 Total (parts by weight) 100 100 100 100 100 100 Configuration of electromagnetic wave absorbing film Inside Inside Inside Inside Inside Inside Size of magnetic particles 100nm / 100nm 100nm 100nm / 100nm 100nm 100nm / 100nm 100nm Film thickness 30μm 30μm 30μm 30μm 30μm 30μm μ” at 60GHz 0.2 0.9 0 0 0 0 μ” at 47GHz 0.54 0 0.51 3.5 0 0 μ” at 28GHz 0 0 0.66 0 0.72 6.8 Coating conditions 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes 100℃ / 2 minutes Exposure conditions 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² 10mJ / cm² Development conditions 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds 60 seconds Baking conditions 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes 220℃ / 5 minutes

[0165] [Table 6] Comparative example Comparative example Comparative example 1 2 3 Magnetic particles Barium Ferromagnetic-1 Barium Ferromagnetic-2 Barium Ferromagnetic-3 Strontium ferromagnet Rare earth-iron-nitrogen magnetic materials Yttrium iron magnets ε-type iron oxide Fe-Mn ferromagnetic materials Ni-Fe based magnetic material Nickel-zinc iron magnet 39.23 dispersant X-1 7.06 - 7.06 X-2 resin B-1 3.24 - 3.24 B-2 B-3 polymeric compounds KAYARAD DPHA 15.05 - KAYARAD RP-1040 15.05 NK ester A-TMMT Hexamethoxymethyl melamine Polymerization initiator Irgacure OXE-01 3.76 - 3.76 Compound (1) Photosensitive materials Benzophenone derivative DNQ antioxidants p-Methoxyphenol 0.01 - 0.01 ADEKA STAB AO-80 surfactants KF-6001 0.04 - 0.04 Polyfox PF6320 solvent PGMEA 31.61 - 31.61 Total (parts by weight) 60.77 0 100 Configuration of electromagnetic wave absorbing film none outside Inside Size of magnetic particles none - 100nm Film thickness none 30μm 30μm μ” at 60GHz 0 0 0 μ” at 47GHz 0 0 0 μ” at 28GHz 0 0 0 Coating conditions 100℃ / 2 minutes - 100℃ / 2 minutes Exposure conditions - - 10mJ / cm² Development conditions - - 60 seconds Baking conditions 220℃ / 5 minutes - 220℃ / 5 minutes

[0166] [Table 7] Example Example Example Example Example Example 1 2 3 4 5 6 Adjacent configuration of electromagnetic wave absorbing films Configurable Configurable Configurable Configurable Configurable Configurable frequency 60GHz 60GHz 60GHz 60GHz 60GHz 60GHz Electric field attenuation (dB) / (volume of electromagnetic wave absorbing film) A A A A A A Magnetic field attenuation (dB) / (volume of electromagnetic wave absorbing film) A A A A A A Number of layers in an electromagnetic wave absorbing film 1 1 1 1 1 1

[0167] [Table 8] Example Example Example Example Example Example 7 8 9 10 11 12 Adjacent configuration of electromagnetic wave absorbing films Configurable Configurable Configurable Configurable Configurable Configurable frequency 60GHz 60GHz 60GHz 60GHz 60GHz 60GHz Electric field attenuation (dB) / (volume of electromagnetic wave absorbing film) A A A C C B Magnetic field attenuation (dB) / (volume of electromagnetic wave absorbing film) A A A C C B Number of layers in an electromagnetic wave absorbing film 1 1 1 1 1 1

[0168] [Table 9] Example Example Example Example Example Example 13 14 15 16 17 18 Adjacent configuration of electromagnetic wave absorbing films Configurable Configurable Configurable Configurable Configurable Configurable frequency 60GHz 60GHz 60GHz 60GHz 60GHz 60GHz Electric field attenuation (dB) / (volume of electromagnetic wave absorbing film) B C C B B C Magnetic field attenuation (dB) / (volume of electromagnetic wave absorbing film) B B B B B C Number of layers in an electromagnetic wave absorbing film 1 1 1 1 1 2

[0169] [Table 10] Example Example Example Example Example Example 19 20 twenty one twenty two twenty three twenty four Adjacent configuration of electromagnetic wave absorbing films Configurable Configurable Configurable Configurable Configurable Configurable frequency 60GHz 60GHz 47GHz 28GHz 28GHz 28GHz Electric field attenuation (dB) / (volume of electromagnetic wave absorbing film) C C A A A B Magnetic field attenuation (dB) / (volume of electromagnetic wave absorbing film) C C A A A B Number of layers in an electromagnetic wave absorbing film 2 2 1 1 1 1

[0170] [Table 11] Example Example Example Example Example Example 25 26 27 28 29 30 Adjacent configuration of electromagnetic wave absorbing films Configurable Configurable Configurable Configurable Configurable Configurable frequency 60GHz 60GHz 47GHz 47GHz 28GHz 28GHz Electric field attenuation (dB) / (volume of electromagnetic wave absorbing film) A A A A A A Magnetic field attenuation (dB) / (volume of electromagnetic wave absorbing film) A A A A A A Number of layers in an electromagnetic wave absorbing film 1 1 1 1 1 1

[0171] [Table 12] Comparative example Comparative example Comparative example 1 2 3 Adjacent configuration of electromagnetic wave absorbing films Unable to configure Configurable Configurable frequency 60GHz 60GHz 60GHz Electric field attenuation (dB) / (volume of electromagnetic wave absorbing film) D D D Magnetic field attenuation (dB) / (volume of electromagnetic wave absorbing film) D B D Number of layers in an electromagnetic wave absorbing film 1 3 1

[0172] As shown in Tables 7-12, compared with Comparative Examples 1-3, Examples 1-30 allow for the placement of electromagnetic wave absorbing films around passive components. Furthermore, sufficient shielding performance against electric and magnetic fields is achieved.

[0173] 10,10a,10b,10c,10d,10e,100: Structure 11: Passive components 12, 14: Sensors 12a, 14a: Strip-shaped members 13,15,102a: Opening 20:Substrate 20a, 22a: Surface 21: Area 22: Interlayer insulating film 23: Constituent Layers 24: Electromagnetic wave absorbing film 30: Light Mask 31a: Masking section 31b: Area 50, 51, 52, 53, 54, 55, 56: Curves 60: Antenna Package 61: Array Antenna 62: A / D Circuit 63: Memory 64:ASIC 65: Antenna 102: Copper layer

Claims

1. A structure comprising: a substrate; a plurality of passive elements disposed on the substrate; and an electromagnetic wave absorbing film disposed on the substrate and located at least in a region of the substrate facing each of the plurality of passive elements, wherein the passive elements are selected from the group consisting of inductors and baluns, the electromagnetic wave absorbing film comprising magnetic particles, the magnetic particles comprising at least one metallic element selected from Ni, Co and Fe, and having an average primary particle size of 20 to 1000 nm, wherein when the real part of the complex permeability μ of the electromagnetic wave absorbing film is designated as μ' and the complex part is designated as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, wherein requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10, requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5, and requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

2. A structure comprising: a substrate; a plurality of coil-shaped passive elements disposed on the substrate and having openings relative to the surface of the substrate; and an electromagnetic wave absorbing film disposed on the substrate and located at at least one opening of the plurality of coil-shaped passive elements, wherein the coil-shaped passive elements are selected from the group including inductors and baluns, the electromagnetic wave absorbing film comprises magnetic particles, the magnetic particles comprising at least one metal element selected from Ni, Co and Fe, and having an average primary particle size of 20 to 1000 nm, wherein when the real part of the complex permeability μ of the electromagnetic wave absorbing film is designated as μ' and the complex part is designated as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, wherein requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10, requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5, and requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

3. The structure as described in claim 1 or 2, wherein the aforementioned electromagnetic wave absorbing film is a patterned electromagnetic wave absorbing film.

4. A structure comprising: a substrate; a plurality of passive elements disposed on the substrate; and an electromagnetic wave absorbing film disposed between the substrate and the passive elements and on at least one of the passive elements on the opposite side of the substrate, wherein the passive elements are selected from the group consisting of inductors and baluns, the electromagnetic wave absorbing film comprises magnetic particles, the magnetic particles comprising at least one metallic element selected from Ni, Co and Fe, and having an average primary particle size of 20 to 1000 nm, wherein when the real part of the complex permeability μ of the electromagnetic wave absorbing film is designated as μ' and the complex part is designated as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, wherein requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10, requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5, and requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

5. The structure as claimed in claim 2, wherein the aforementioned electromagnetic wave absorbing film is disposed in the region between the plurality of aforementioned coil-shaped passive elements disposed on the aforementioned substrate.

6. The structure as claimed in claim 4, wherein the aforementioned electromagnetic wave absorbing film is disposed between the aforementioned substrate and the aforementioned passive element and on the opposite side of the aforementioned substrate of the aforementioned passive element.

7. The structure as described in claim 1 or 2, wherein the thickness of the aforementioned electromagnetic wave absorbing film is less than 300 μm.

8. A method for manufacturing a structure, comprising: The steps include: coating a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive elements are disposed to form a composition layer; wherein the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and the average primary particle size is 20 to 1000 nm; and performing exposure and development processing on the composition layer to form an electromagnetic wave absorbing film disposed on the substrate and located at least in the region between the plurality of passive elements. The passive elements are selected from the group including inductors and baluns. When the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3: requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10; requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5; requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

9. A method for manufacturing a structure, comprising: The steps include: coating a photosensitive composition containing magnetic particles onto at least one of the openings of a plurality of coil-shaped passive elements disposed on a substrate and having an opening relative to the surface of the substrate to form a composition layer; wherein the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and have an average primary particle size of 20 to 1000 nm; and performing exposure and development processing on the composition layer to form an electromagnetic wave absorbing film disposed on the substrate and located at at least one of the openings of the plurality of coil-shaped passive elements; wherein the coil-shaped passive elements are selected from the group including inductors and baluns; when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ', and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10; requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5. Requirement 3: μ” in the 60GHz frequency is 0.1 to 2.

10. A method for manufacturing a structure, comprising: The steps include: coating a photosensitive composition containing magnetic particles onto a substrate to form a composition layer, wherein the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and the average primary particle size is 20 to 1000 nm; performing exposure and development processes on the composition layer to form an electromagnetic wave absorbing film on the substrate; and forming a plurality of passive components on the electromagnetic wave absorbing film, wherein the passive components are selected from the group including inductors and baluns; when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10; requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5; requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

11. A method for manufacturing a structure, comprising: The steps include: coating a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive components are disposed to form a composition layer; wherein the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and the average primary particle size is 20 to 1000 nm; and performing exposure and development processes on the composition layer to form an electromagnetic wave absorbing film on the plurality of passive components; wherein the passive components are selected from the group including inductors and baluns; and when the real part of the complex permeability μ of the electromagnetic wave absorbing film is set as μ' and the complex part is set as μ”, the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, where: requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10; requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5; and requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

12. A method for manufacturing a structure as claimed in claim 9, wherein the step of forming the constituent layer includes a step of coating the photosensitive constituent on the opening of the plurality of coil-shaped passive elements and on the substrate on which the plurality of coil-shaped passive elements are disposed, and the step of forming the electromagnetic wave absorbing film is a step of forming the electromagnetic wave absorbing film in the region between the opening of the plurality of coil-shaped passive elements disposed on the substrate and the plurality of coil-shaped passive elements on the substrate.

13. A method for manufacturing the structure as described in claim 10, further comprising: The steps of coating the aforementioned photosensitive composition onto the electromagnetic wave absorbing film prior to forming the aforementioned plurality of aforementioned passive elements to form a composition layer; and the steps of performing exposure and development processing on the aforementioned composition layer to further form an electromagnetic wave absorbing film on the electromagnetic wave absorbing film prior to forming the aforementioned plurality of aforementioned passive elements.

14. A composition used for forming an electromagnetic wave absorbing film in a structure according to any one of claims 1 to 7, wherein the composition comprises magnetic particles, a resin having an acid group, a curing compound, and a polymerization initiator, the magnetic particles comprising at least one metal element selected from Ni, Co, and Fe, and having an average primary particle size of 20 to 1000 nm, wherein the real part of the complex permeability μ of the electromagnetic wave absorbing film formed using the composition is designated as μ', and the complex part is designated as μ”, wherein the complex part μ” of the complex permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3, and requirement 1: μ” at a frequency of 28 GHz is 0.1 to 10, requirement 2: μ” at a frequency of 47 GHz is 0.1 to 5, requirement 3: μ” at a frequency of 60 GHz is 0.1 to 2.

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