Metal oxide directional removal

TWI939506BActive Publication Date: 2026-09-21APPLIED MATERIALS INC
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Patent Information

Application Number
TW111122972
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-07-15
Filing Date
2022-06-21
Publication Date
2026-09-21
Estimated Expiration
2042-06-20

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Patent Text Reader

Abstract

Exemplary etching methods may include modifying an exposed surface of a metal oxide layer on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of the metal oxide. These methods may include contacting the modified portion of the metal oxide with a fluorine-containing precursor. This contact may produce a metal fluoride oxide material. These methods may include flowing an etchant precursor into the processing region. These methods may include contacting the metal fluoride oxide material with the etchant precursor. These methods may include removing the metal fluoride oxide material.
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Citation Information

Patent Citations

  • Dry-ETCH for selective oxidation removal

    US20140199850A1

  • Etching reactants and plasma-free etching processes using the same

    US20180327913A1