Ampoule for a semiconductor manufacturing precursor

Abstract

This invention describes an ampoule for use with semiconductor manufacturing precursors and a method of use. The ampoule includes a container having an inlet port and an outlet port. Alternating first and second elongated walls are arranged in the container to define longitudinal channels containing precursor material, and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passage is located in the lower portion of the precursor cavity and the second passage is located in the upper portion of the cavity. Flow paths are defined by the longitudinal channels and passages, through which a carrier gas flows and contacts the precursor material. In one or more embodiments, the precursor material is solid.

Description

Technical Field

[0001] This disclosure broadly relates to ampoules for semiconductor manufacturing precursors and methods for using semiconductor manufacturing precursors. Specifically, this disclosure relates to ampoules and methods for providing curved flow paths for precursor materials (e.g., solid precursor materials). Prior Technology

[0002] The semiconductor industry is using an increasing variety of liquid or solid chemical substances in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Precursors are typically housed inside closed containers or ampoules with a single inlet and a single outlet.

[0003] Solid chemical precursors are transported (i.e., delivered) from a container (ampoule) to a reactor for deposition / etching processes. Typically, solid materials have low vapor pressures, making mass flow controllers and other delivery mechanisms unsuitable, and requiring a carrier gas to sweep the material out of the ampoule. Precursors with low vapor pressures often use a carrier gas to carry vaporized or sublimated precursors from the ampoule to the process reactor. However, standard ampoule designs generally do not result in saturated volatile or sublimated carrier gases. Two methods have previously been used to enhance such subsaturated carrier flows: reducing the size of the slowly diffusing boundary layer using high-speed jets, or increasing the residence time between the gas and solid by allowing the gas to flow above a tray filled with solids.

[0004] The reaction rate at the wafer depends on the gas phase concentration, so enhanced transport kinetics are needed to improve process conditions.

[0005] In general, this technology requires ampoules and methods of manufacturing and use, wherein the ampoules have sufficient flow paths to saturate or near-saturate the precursor in the carrier gas and to provide continuous delivery of the precursor. Continuous improvement of process conditions is also required. Specifically, improvements are needed for precursor delivery to high aspect ratio structures on wafers, which relies on high-concentration precursors used in conformal processes. Summary of the Invention

[0006] One or more embodiments relate to ampoules for use in semiconductor manufacturing precursors. The ampoule includes a container defining a cavity configured to contain the precursor. An inlet port and an outlet port are both in fluid communication with the cavity. Alternating first and second elongated walls are arranged to define a series of longitudinal channels containing the precursor material, and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passage is located in the lower portion of the precursor cavity and the second passage is located in the upper portion of the cavity. Flow paths are defined by the longitudinal channels and passages, through which a carrier gas flows and contacts the precursor material.

[0007] Other embodiments of this disclosure pertain to ampoules for dispensing a vapor mixture of a carrier gas and a precursor for semiconductor manufacturing. The ampoule includes a container having a bottom wall, side walls, and a lid, the container defining a cavity configured to contain the precursor, such that the height (H) of the cavity extends from the lower surface of the lid to the top surface of the bottom wall. A single inlet port and a single outlet port are in fluid communication with the cavity. The ampoule includes: alternating first and second elongated walls arranged to define a series of longitudinal channels containing the precursor material; and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passage is located in the lower portion of the precursor cavity, and the second passage is located in the upper portion of the cavity, and neither of the first nor second passages overlaps. The longitudinal channels and passages define tortuous flow paths through which the carrier gas flows and contacts the precursor material.

[0008] Other embodiments of this disclosure pertain to a method of providing precursor flow. A carrier gas flows through an inlet port of an ampoule containing precursor material. The carrier gas, which contacts the precursor material within the ampoule, flows through a series of longitudinal channels defined by alternating first and second elongated walls, and alternating first and second passages between each of these longitudinal channels, allowing fluid communication between adjacent longitudinal channels. The carrier gas flows through these passages and contacts the precursor material, wherein the first passage is located in the lower portion of the precursor cavity, and the second elongated passage is located in the upper portion of the cavity. The carrier gas and precursor flow out of the ampoule via an outlet port. Simple Explanation of the Diagram

[0009] To understand in detail the above-described features of the invention, the invention briefly outlined above can be described more specifically with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the invention and should not be considered as limiting the scope of the invention, as other equivalent embodiments are permissible under this disclosure.

[0010] Figure 1 shows a cross-sectional view of an ampoule and an attached manifold having an "outer-to-outer flow" configuration according to an embodiment;

[0011] Figure 2 shows a partial cross-sectional view of the container only along line Z-Z' of Figure 1 according to one or more embodiments; and

[0012] Figure 3 shows a schematic cross-sectional view of an ampoule containing a solid precursor material according to one or more embodiments.

[0013] In the accompanying drawings, similar components and / or features may have the same element symbol. Additionally, components of the same type can be distinguished by adding a dash and a second symbol after the element symbol to differentiate similar parts. If only the first element symbol is used in the specification, the description applies to any of the similar parts having the same first element symbol, regardless of the second element symbol. Cross-shading of components in the drawings aids in the visualization of different parts and does not necessarily indicate different structural materials. Implementation

[0014] Before describing several exemplary embodiments of the invention, it should be understood that the invention is not limited to the details of the construction or process steps set forth in the following description. The invention may include other embodiments and may be practiced or performed in various ways.

[0015] The research into new materials for semiconductor manufacturing processes has increased the demand for new chemical precursors. Many chemical precursors have reduced volatility and are often solid-state. Due to the lower vapor concentration delivered, low vapor pressure (e.g., solid-state) precursors are prone to poor conformability in 3D structures with large surface areas. Concentration is usually increased by raising the ampoule temperature, but many precursors have maximum temperature limits due to thermal decomposition.

[0016] The delivery stream for conveying low vapor pressure precursors (e.g., solid materials) to a process reactor depends on the residence time between the carrier gas and the solid. Saturated delivery streams promote process stability, and their higher concentrations benefit reactions at the wafer surface. Ampoules designed with vertical walls or baffles (e.g., longitudinally extending structures within the ampoule) allow the carrier gas to pass through a void space containing granular or spherical solids, thereby promoting turbulence, mixing, and diffusion as the carrier gas follows a tortuous path through the channel defined by the baffles in the ampoule. Advantageously, the designs described herein promote disruption of the gas / solid interface by maximizing residence time through a bed of granular solids. Advantageously, the designs described herein also facilitate easier refilling. Some embodiments of this disclosure advantageously provide tortuous flow paths that allow the carrier gas to travel from the ampoule inlet to the outlet, thereby delivering the precursor.

[0017] Flow paths with tortuous flow paths (i.e., paths involving changes in flow direction) allow sufficient residence time for the carrier gas, thereby enabling vaporization and / or sublimation and / or entrainment of precursors to become partially to nearly fully saturated. The term "saturation" as used herein allows for varying degrees of saturation.

[0018] We understand low vapor pressure precursors to be materials that do not readily vaporize under atmospheric conditions. Low vapor pressure precursors typically have a vapor pressure of less than 10 Torr, and more often less than 1 Torr. In some applications, a carrier gas is used to deliver the low vapor pressure material from the ampoule to the reactor. Low vapor pressure materials usually require heat to increase their vapor pressure. "Metal chlorides" and / or "organic metal precursors" are examples of such low-pressure materials.

[0019] In one or more embodiments, the design pertains to ampoule volumes ranging from 1.2 L to 4 L (and all values ​​and sub-ranges in between).

[0020] Other advantages of the ampoules described in this paper include the ability to increase the concentration of solid material without significantly affecting the geometry of standard ampoules. Higher concentrations can be used to expand the process window and improve the deposition / etching efficiency of structures with high aspect ratios. Additionally, this design allows for large-scale delivery of precursors. Furthermore, granular solids can be easily added to this design using an open top cap, which is typically not possible with powdered or sintered solids. Unlike cross-flow ampoule designs where the carrier gas flows along a path of least resistance, the design described in this paper allows the carrier gas to flow via a tortuous path and change direction within the ampoule. The carrier gas permeates through the void spaces between the solid spheres, causing material to evaporate from all sides of the surface. By allowing the gas to pass through the solid precursor bed, the slowly diffusing stagnant layer is disrupted, extending the residence time of the carrier gas inside the ampoule and thus increasing the delivery concentration.

[0021] In one or more embodiments, solid chemical precursors are preferentially screened out to obtain and / or form larger particles or spheres, and these solid chemical precursors are packed into ampoules (e.g., steel ampoules). A carrier gas is passed through the particle or sphere bed. The carrier gas stream carries away material evaporated from the solid surface and carries it from the ampoule into the process reactor. The resulting concentration in the carrier gas will depend on the residence time on the solid, the size of the boundary layer surrounding the particles, and the surface area interacting with the gas.

[0022] Walls and / or baffles are inserted into the ampoule to guide flow through the particle bed and the headspace of the container. Additional baffles may be added to increase the number of sub-compartments (where diffusion and headspace mixing occur), thereby increasing the saturation level of the gas as it passes through the ampoule outlet. In one or more embodiments, the walls and / or baffles use sealing O-rings to isolate each sub-compartment to guide the airflow. Flow is guided using walls and passageways. In one or more embodiments, walls are arranged in the container to form flow channels, and wallless passageways allow fluid communication between the channels. In one or more embodiments, the baffle includes walls and passageways. For example, the baffle may include a baffle wall, which is an impermeable material body (e.g., steel), and defines one or more openings therein to guide the airflow. Passageways and walls are arranged in the baffle wall, and orifices are similarly arranged, such that flow is alternately directed towards the bottom of the ampoule, then towards the top of the ampoule, until reaching the ampoule outlet.

[0023] Generally, the ampoule includes: a container defining a precursor cavity configured to contain precursor material; and an inlet port and an outlet port, both in fluid communication with the precursor cavity. Alternating first and second elongated baffles are arranged to define a series of longitudinal channels containing the precursor material, and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passage is located in the lower part of the precursor cavity and the second passage is located in the upper part of the cavity. The flow paths are defined by the longitudinal channels and passages, through which a carrier gas flows and contacts the precursor material.

[0024] In one or more embodiments, the ampoule includes: a container having a bottom wall, side walls, and a lid, the container defining a precursor cavity configured to contain a solid precursor, such that the height (H) of the precursor cavity extends from the bottom surface of the lid to the top surface of the bottom wall; and a single inlet port and a single outlet port, both in fluid communication with the precursor cavity. Alternating first and second elongated walls are arranged to define a series of longitudinal channels containing the precursor material, and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passage is located in the lower portion of the precursor cavity, and the second passage is located in the upper portion of the cavity, and neither of the first nor the second passage overlaps. The longitudinal channels and passages define a tortuous flow path through which a carrier gas flows and contacts the precursor material.

[0025] In one or more embodiments, the flow path extends from a first outer channel connected to the inlet port to a second outer channel connected to the outlet port; this may be referred to as an "outer-outer flow" configuration. In one or more embodiments, the flow path extends from an inner channel connected to the inlet port to one or more outer channels connected to the outlet port; this may be referred to as an "inner-outer flow" configuration.

[0026] The container can have any suitable shape to accommodate solid precursors, walls and / or baffles, and process applications. In one or more embodiments, the container shape is selected from: cylinders, rectangular prisms, cuboids, and cubes.

[0027] In general, the flow path provided herein allows the carrier gas to flow alternately towards the bottom of the ampoule and then towards the top of the ampoule via elongated baffles with non-overlapping openings. First and second elongated walls define longitudinal channels, each containing a volume of solid precursor. The gas flow changes direction between channels until it reaches the last channel communicating with the outlet. This change of direction also promotes the mixing of the vaporized and / or sublimated precursor with the carrier gas. Passages and / or openings in the baffles allow the carrier gas to flow into the next channel. The gas flow referred to herein includes carrier gas alone or a combination of carrier gas and entrained and / or vaporized and / or sublimated precursor.

[0028] Figure 1 shows a cross-sectional view of an ampoule 100 and an accompanying manifold having an "outer-to-outer flow" configuration according to one embodiment. The ampoule 100 and manifold 102 are suitable for use with semiconductor manufacturing materials, including reagents and precursors. The term "precursor" is used to describe the contents of the ampoule 100 and refers to any reagent flowing into the process environment.

[0029] Ampoule 100 includes a container 110 having a bottom wall 112, side walls 114, and a cap 116. An inlet port 120 and an outlet port 130 are in fluid communication with a precursor cavity defined by the inner wall of container 110. In one or more embodiments, ampoule 100 includes a single inlet port 120 and a single outlet port 130. Inlet port 120 is generally configured to allow connection to a gas source "G" via suitable tubing and valves, and may have a suitable threaded or sealed connection. In one or more embodiments, the gas source "G" is a carrier gas; in one or more embodiments, the carrier gas is inert. Outlet port 130 is also in fluid communication with the cavity. Outlet port 130 is generally configured to allow connection to a line (including suitable tubing and valves) allowing gas flow (which may include entrained particles) escaping container 110 to flow into a processing chamber (or other component) "P". Outlet port 130 may have a welded or threaded connection to allow connection to a gas line.

[0030] In one or more embodiments, the ampoule includes a single inlet port and a single outlet port. Although the embodiment of Figure 1 depicts one inlet port and one outlet port, multiple inlet ports and outlet ports may be present depending on specific application requirements. The positioning of the inlet and outlet ports can be changed to accommodate other designs.

[0031] In one or more embodiments, inlet port 120, outlet port 130, or both inlet port 120 and outlet port 130 extend through cover 116. In one or more embodiments, inlet port 120, outlet port 130, or both inlet port 120 and outlet port 130 extend through sidewall 114. In one or more embodiments, inlet port 120 extends through cover 116, and outlet port 130 extends through sidewall 114. In one or more embodiments, inlet port 120 extends through sidewall 114, and outlet port 130 extends through cover 116.

[0032] The height (H) of the cavity defined by container 110 extends from the lower surface of lid 116 to the top surface of bottom wall 112. Cavity 118 has a centerline 164 located at the midpoint of the height "H".

[0033] Inlet port 120 has a passage 121, the inner diameter of which defines the cross-sectional width of passage 121, and inlet port 120 extends through cover 116. Passage 121 allows a volume of inlet carrier gas to flow from source "G" into the precursor cavity (generally shown as 118). In one or more embodiments, a solid precursor is disposed in precursor cavity 118. In one or more embodiments, the solid precursor is granular or spherical.

[0034] The outlet port 130 has a passage 131, the inner diameter of which defines the cross-sectional width of the passage 121, and the outlet port 130 extends through the cover 116. The passage 131 allows a certain volume of output entrained and / or saturated carrier gas to flow from the ampoule to the downstream process chamber "P".

[0035] Specifically, in this embodiment, the cavity 118 contains a plurality of longitudinal flow channels 124a to 124d defined by a plurality of elongated baffles 126a to 126c. Each of the elongated baffles 126a to 126c includes one or more openings (not shown in this view).

[0036] The inlet port 120 (and its passage 121) is in fluid communication with the first outer channel 124a, and the outlet port 130 (and its passage 131) is in fluid communication with the second outer channel 124d. Channels 124b and 124c are inner channels.

[0037] In some embodiments, as shown in Figure 1, the cap 116 is a separate component from the bottom wall 112 and the side wall 114. The cap 116 can be attached to the side wall 114 of the container 110 using removable bolts through appropriately shaped openings, which may have threaded portions to facilitate easy connection of threaded bolts. The removable bolts allow the cap 116 to be removed from the container 110, enabling the modification or addition of the precursor 150 within the container 110. A first seal 152 is located between the upper surface of the side wall 114 and the lower surface of the cap 116 to form a fluid seal. In one or more embodiments, the first seal 152 is an O-ring. In one or more embodiments, the first seal 152 is a metal gasket.

[0038] The cover may further include one or more outer surface features that reciprocate with the external heater. The bottom wall may be configured to reciprocate with the external heater. One or more sheath heaters may be provided around the side walls.

[0039] A plurality of elongated baffles 126a to 126c at the bottom edge or margin remain in or cooperate with the top surface of the bottom wall 112. In this embodiment, individual seals 127a to 127c (e.g., O-rings) provide fluid-tight separation around the bottom surface of each baffle, bottom wall 112, side wall 114, and cap 116. In this way, flow is allowed through the openings in the baffles between the longitudinal channels. In one or more embodiments, the elongated baffles can effectively conduct heat from one or more external sources.

[0040] The elongated baffles 126a to 126c can be positioned, secured, or otherwise connected to the container 110 using any suitable technique. In one or more embodiments, the elongated baffles 126a to 126c can be independently fastened to each other and to the inner surface of the container using fasteners.

[0041] Depending on the design, the second seal may be positioned between the upper portion of the bottom wall 112 and the lower surface of the side wall 114 to form a fluid seal. In some embodiments, the first seal 152 and the second seal are separate O-rings or metal gaskets.

[0042] In some embodiments (not shown), the lid 116 may be integrally formed with the sidewall 114 and bottom wall 112 of the container 110.

[0043] Different manifold configurations can be connected to the cap 116 to allow ampoules 100 to be added to the process chamber. In some embodiments, an inlet line 170 is connected to an inlet port 120. An inlet valve 172 can be positioned on the inlet line 170 between the gas source "G" and the inlet port 120. The inlet valve 172 may be integrally formed with the cap 116 or connected to the cap 116 as a separate component. An outlet line 180 can be connected to an outlet port 130. In some embodiments, the outlet line 180 includes an outlet valve 182 located between the outlet port 130 and the processing chamber "P". The inlet valve 172 and the outlet valve 182 can be used to isolate the ampoule 100, thereby isolating the contents of the cavity 118 from the environment outside the container 110. In some embodiments, multiple valves are present along the inlet line 170 (e.g., 174) and / or the outlet line 180 (e.g., 184) and / or between both (e.g., 190). The valves may be manual or pneumatic valves.

[0044] Referring to Figure 2, which is a partial cross-sectional view of container 110 along line Z-Z' of Figure 1, the baffle 126b includes a plurality of openings 128b (e.g., one or more) in the baffle wall 129b. The baffle 126b forms a longitudinal flow channel. A seal 127b (e.g., an O-ring) is present between the baffle wall 129b and the cover 116, side wall 114, and bottom wall 112. The openings 128b of the baffle wall 129b are offset from the openings of adjacent baffles such that the openings of the first configured baffle do not overlap with the openings of the second configured baffle and do not bypass any flow channel. The baffles can be fixed (e.g., welded) to the inner surface of the container. The baffles can be configured with multiple holes to receive fasteners (e.g., bolts) to secure adjacent baffles during ampoule assembly.

[0045] The shape and size of the openings are based on the desired application. In one or more embodiments, the openings are circular. In one or more embodiments, there are one to ten openings in the baffle wall. In one or more embodiments, the openings are a plurality of holes spaced along the width of each wall on each baffle wall. In one or more embodiments, the openings span the axial width of the baffle wall. In one or more embodiments, the openings span a distance less than 100% to greater than or equal to 1% of the axial width of the baffle wall and all values ​​and subranges therebetween.

[0046] The baffle 126b includes a first configuration in which one or more openings 128b are located in the lower portion of the baffle wall 129b. That is, relative to the longitudinal centerline 164 of the baffle 126b, the openings 128b are at or below the midpoint, closer to the bottom wall 112. In one or more embodiments, the openings of the first configuration baffle are located inside the bottom, at 25% or 20% or 15% or 10% or 5% or 1% of the longitudinal distance between the baffle and the top surface of the bottom wall 112.

[0047] A second baffle adjacent to the first baffle has one or more openings located on the upper part of the baffle wall (not shown in Figure 2). That is, relative to the longitudinal centerline of the second baffle (e.g., 126a and 126c in Figure 1), the individual openings 128a and 128c are located at or above the centerline, closer to the cover 116. In one or more embodiments, the openings of the second baffle are located inside the top, at 25% or 20% or 15% or 10% or 5% or 1% of the longitudinal distance between the baffle and the bottom surface of the cover 116.

[0048] The openings of the first and second configurations are offset. If the opening of one configuration is located on the centerline, the openings of the other configurations are not located on the centerline.

[0049] Figure 3 shows a cross-sectional schematic diagram of an ampoule 200 containing a solid precursor material 250 according to one or more embodiments. The solid precursor material 250 is in a bed, and there are void spaces 256 between the particles or spheres of the solid precursor material 250. Arrows A, B, C, D, E, F, and G indicate the flow path of the carrier gas "G" through longitudinal channels 224a, 224b, 224c, 224d, 224e, 224f, 224g, and 224h. In this embodiment, there are four elongated walls 226a, 226c, 226e, and 226g in a first configuration, which are directly or indirectly connected to the cap 216, and a series of separate first passages 228a, 228c, 228e, and 228g are below the centerline 264 of the cavity 218. Each of the individual elongated walls 226a, 226c, 226e, 226g, and a portion of the top surface of the bottom wall 212 defines a first passageway 228a, 228c, 228e, and 228g. Additionally, in this embodiment, three elongated walls 226b, 226d, 226f are provided in a second configuration. These walls are directly or indirectly connected to the bottom wall 212, and a series of individual second passageways 228b, 228d, and 228f lie above the centerline 264 of the cavity 218, which is located at the midpoint of the height of the cavity defined by the lower surface of the cover 216 and the top surface of the bottom wall 212. Each of the individual elongated walls 226b, 226d, 226f, and a portion of the bottom surface of the cover wall 216 defines a second passageway 228b, 228d, and 228f. The first passageways are offset from the second passageways of adjacent flow channels, such that there is no overlap between the passageways and no bypassing of any flow channel.

[0050] The walls 226a to 226g can be placed, secured, or otherwise attached to the container 210 using any suitable technique. In one or more embodiments, the walls 226a to 226g can be independently welded to the inner surface of the container.

[0051] Airflow "G" enters the first outer channel 224a from inlet 220 and its passage 221, flowing towards the bottom wall 212. The first inner surface of side wall 114s1 and the surface of wall 226a define the first outer channel 224a. Arrow "A" indicates that the flow passes through opening 228a in wall 226a and enters the inner channel 224b, flowing towards the cover 216. Arrow "B" indicates that the flow passes through opening 228b in wall 226b and enters the inner channel 224c, flowing towards the bottom wall 212. Arrow "C" indicates that the flow passes through opening 228c in wall 226c and enters the inner channel 224d, flowing towards the cover 216. Arrow "D" indicates that the flow passes through opening 228d in wall 226d and enters the inner channel 224e, flowing towards the bottom wall 212. Arrow "E" indicates that the flow passes through opening 228e in wall 226e and enters the inner channel 224f, flowing towards the cover 216. Arrow "F" indicates that the flow passes through the opening 228f in wall 226f into the inner channel 224g and flows towards the bottom wall 212. Arrow "G" indicates that the flow passes through the opening 228g in wall 226g into the second outer channel 224h and flows towards the outlet port 230 and its passage 231. The second inner surface of sidewall 114s2 and the surface of wall 226g define the second outer channel 224h.

[0052] In one or more embodiments, the ampoule includes a single inlet and a single outlet. Although the embodiment in Figure 3 depicts one inlet port and one outlet port, multiple inlet and outlet ports may be present depending on specific application requirements. The positioning of the inlet and outlet ports can be changed to accommodate other designs.

[0053] In one or more embodiments, inlet port 220, outlet port 230, or both inlet port 220 and outlet port 230 extend through cover 216. In one or more embodiments, inlet port 220, outlet port 230, or both inlet port 220 and outlet port 230 extend through sidewall 214. In one or more embodiments, inlet port 120 extends through cover 216, and outlet port 230 extends through sidewall 214. In one or more embodiments, inlet port 220 extends through sidewall 214, and outlet port 230 extends through cover 216.

[0054] In one or more embodiments, the relative positions of the baffles can be adjusted as needed. In one or more embodiments, the axial distance between the walls is different.

[0055] In the flow channel, the carrier gas traveling through the void space 256 contacts the solid precursor 250, thereby entraining and / or vaporizing the precursor as the carrier gas passes over the surface of a certain volume of precursor. During this process in each of the flow channels, the carrier gas continues to contact the precursor 250 and becomes saturated.

[0056] Therefore, flow channels 224a to 224h include multiple curved passages (224a to 224g) and an outlet passage (224h).

[0057] According to one or more embodiments, when the ampoule contains a minimum amount of precursor (which may depend on the specific precursor in the ampoule and its physical properties), it is expected that the carrier gas will become fully saturated over the flow path distance. It is not expected that the degree of saturation will decrease during use as the amount of precursor level in the ampoule decreases.

[0058] We understand that the eight flow channels in Figure 3 are not restrictive, and the number of channels can be selected based on spatial constraints and / or precursor characteristics and / or design needs.

[0059] In some embodiments, the airflow through inlet 220 and along the flow path is sufficient to entrain and / or vaporize and / or sublimate the precursor, without the need for foaming. As the level of the precursor 250 decreases, the airflow is adjusted during processing to maintain sufficient contact. In some embodiments, the airflow has a maximum velocity and a heat source sufficient to prevent condensation of the precursor 250 at outlet 230.

[0060] The equipment referred to herein may include thermocouples, mass flow meters, and pressure gauges to monitor process conditions. In one or more embodiments, a mass flow meter is provided to monitor the airflow into the inlet port. In one or more embodiments, a thermocouple is installed in the cap. In one or more embodiments, a pressure gauge is provided on the inlet line and / or outlet line. According to some embodiments, the pressure range in the ampoule is greater than or equal to 25 Torr to less than or equal to 150 Torr.

[0061] Throughout this specification, the terms "one embodiment," "some embodiments," "one or more embodiments," or "an embodiment" mean that at least one embodiment of the invention includes a specific feature, structure, material, or characteristic described in connection with the embodiment. Therefore, the appearance of phrases such as "in one or more embodiments," "in some embodiments," "in one embodiment," or "in one embodiment" in multiple places throughout this specification does not necessarily refer to the same embodiment of the invention. Furthermore, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0062] Although the invention has been described with reference to specific embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of the invention. It will be apparent to those skilled in the art that modifications and variations can be made to the methods and apparatus of the invention without departing from the spirit and scope of the invention. Therefore, the invention is intended to include modifications and variations within the scope of the appended claims and their equivalents.

[0063] 100: Ampoule 102: Manifold 110: Container 112: Bottom wall 114: Sidewall 116: Lid 118: Cavity 120: Entrance Port 121:Pathway 130: Export Port 131:Pathway 152: First seal 164: Longitudinal centerline 170: Entrance Route 172: Inlet valve 174: 180: Export Route 182: Outlet Valve 184: 190: 200: Ampoule 212: Bottom wall 214: Sidewall 216: Lid 218: Cavity 220: Entrance Port 221:Pathway 230: Export Port 231:Pathway 250: Solid precursor 256: Void Space 264: Centerline 114s1: Sidewall 114s2: Sidewall 124a: Longitudinal flow channel 124b: Longitudinal flow channel 124c: Longitudinal flow channel 124d: Longitudinal flow channel 126a: Slender baffle 126b: Slender baffle 126c: Slender baffle 127a: Seals 127b: Seals 127c: Seals 128b: Opening 129b: Baffle wall 224a: Longitudinal flow channel 224b: Longitudinal flow channel 224c: Longitudinal flow channel 224d: Longitudinal flow channel 224e: Longitudinal flow channel 224f: Longitudinal flow channel 224g: Longitudinal flow channel 224h: Longitudinal flow channel 226a: Slender wall 226b: Slender wall 226c: Slender wall 226d: Slender wall 226e: Slender wall 226f: Slender wall 226g: Slender wall 228a: First pathway 228b: Second Pathway 228c: First Pathway 228d: Second Pathway 228e: First Pathway 228f: Second Pathway 228g: First pathway A: Arrow B: Arrow C: Arrow D: Arrow E: Arrow F: Arrow G: Arrow H: Height P: Processing Chamber Z: Line Z': Line

[0064] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. An ampoule containing a precursor material for semiconductor manufacturing, the ampoule comprising: A container defining a precursor cavity configured to contain the precursor material, the container including a lid having a bottom surface, a bottom wall having a top surface, and a sidewall defining the precursor cavity; an inlet port and an outlet port, both in fluid communication with the precursor cavity; alternating first and second elongated baffles extending from the bottom surface of the lid to the top surface of the bottom wall and arranged to define a series of longitudinal channels containing the precursor material, and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passages include one or more openings located below the first elongated baffle, and the second passages are one or more openings located above the second elongated baffles, and the first passages and the second passages are offset from each other; A flow path, defined by the longitudinal flow channels and the first and second passages, through which a carrier gas flows and contacts the precursor material; and a seal, selected from O-rings and gaskets, which provides a fluid-tight separation between the first and second sets of elongated baffles and forces flow through the first and second passages, and the bottom surface of the cap contacts the sidewalls of the container.

2. The ampoule as described in claim 1, wherein the cap is a component separate from the bottom wall and the side walls.

3. An ampoule as described in claim 1, wherein the flow path is curved.

4. The ampoule as claimed in claim 1, wherein the seals are located at a bottom edge and a top edge of the first elongated baffle and the second elongated baffle.

5. The ampoule as claimed in claim 1, comprising a first elongated baffle ranging from one to ten and a second elongated baffle ranging from one to ten.

6. The ampoule as claimed in claim 1, wherein a solid precursor is disposed in the form of particles or pellets within the precursor cavity and void spaces are defined between the particles or pellets to provide a precursor material site.

7. The ampoule as described in claim 6, wherein the ampoule includes a single inlet and a single outlet, the single inlet being located above the precursor material location.

8. The ampoule as claimed in claim 1, wherein each of the first elongated baffles comprises a total of one to ten openings, and each of the second elongated baffles independently comprises a total of one to ten openings.

9. An ampoule for dispensing a vapor mixture of a carrier gas and a precursor material used in semiconductor manufacturing, the ampoule comprising: A container having a bottom wall, side walls, and a lid, the bottom wall having a top surface and the lid having a bottom surface, the container defining a precursor cavity configured to receive a solid precursor such that a height (H) of the precursor cavity extends from the bottom surface of the lid to the top surface of the bottom wall; a single inlet port and a single outlet port, both in fluid communication with the precursor cavity; alternating first and second elongated baffles extending from the top surface of the bottom wall to the bottom surface of the lid and arranged to define a series of longitudinal channels containing the precursor material, and alternating first and second passages between each of the longitudinal channels, allowing fluid communication between adjacent longitudinal channels, wherein the first passages are openings located below the first elongated baffles and the second passages are openings located above the second elongated baffles, and the first and second passages are offset from each other; A seal, selected from O-rings and gaskets, provides a fluid-tight separation between the first set of elongated baffles and the second set of elongated baffles, and forces flow through the first and second passages, with the bottom surface of the cap contacting the sidewalls of the container; and a tortuous flow path defined by the longitudinal channels and the first and second passages, through which a carrier gas flows and contacts the precursor material.

10. The ampoule as claimed in claim 9, wherein the cap is a separate component from the bottom wall and the side walls.

11. The ampoule as claimed in claim 9, comprising a first elongated baffle ranging from one to ten and a second elongated baffle ranging from one to ten.

12. The ampoule as claimed in claim 9, wherein each of the first elongated baffles comprises a total of one to ten openings, and each of the second elongated baffles independently comprises a total of one to ten openings.

13. The ampoule as claimed in claim 9, wherein the precursor material is a solid precursor and is in the form of particles or pellets, and void spaces are defined between such particles or pellets, and a length of the tortuous flow path effectively saturates the carrier gas by the solid precursor material.

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