Image sensor including dual vertical gate

TWI939529BActive Publication Date: 2026-09-21SAMSUNG ELECTRONICS CO LTD
View PDF 3 Cites 0 Cited by

Patent Information

Application Number
TW111127012
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-07-21
Filing Date
2022-07-19
Publication Date
2026-09-21
Estimated Expiration
2042-07-18

Smart Images

  • Figure TWG2TB001911646_001
    Figure TWG2TB001911646_001
  • Figure TWG2TB001911646_002
    Figure TWG2TB001911646_002
  • Figure TWG2TB001911646_003
    Figure TWG2TB001911646_003
Patent Text Reader

Abstract

This invention provides an image sensor comprising dual vertical gates. The dual vertical gates include: two vertically extending portions spaced apart from each other in a first direction and extending vertically into a substrate in a second direction perpendicular to the first direction; and a connecting portion connecting the two vertically extending portions to each other. An element isolation layer is disposed adjacent to the side surfaces of the two vertically extending portions in the first direction. The two vertically extending portions are separated by a separation region extending in the second direction, and the top surface of the separation region is lower than the top surface of the element isolation layer.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Vertical gate structure and layout in a CMOS image sensor

    TW202121674A

  • Methods for fabricating solid state image sensor devices having non-planar transistors

    US20060084195A1

  • Solid-state imaging device

    US20130076934A1