Adhesive tape for semiconductor device manufacturing

Abstract

The purpose of this invention is to provide an adhesive tape for semiconductor device manufacturing that exhibits excellent peeling performance of wafer components and can suppress paste residue on the wafer components. This invention is an adhesive tape for semiconductor device manufacturing, which sequentially comprises a substrate, an etch layer, a barrier layer, and a first adhesive layer.

Description

Technical Field

[0001] This invention relates to an adhesive tape for manufacturing semiconductor devices. Prior Technology

[0002] In the manufacturing process of semiconductor devices, multiple wafer components disposed on an adhesive layer are sometimes transferred onto a drive circuit substrate. For example, a micro-LED display is a display device in which each chip constituting a pixel is a tiny light-emitting diode (LED) chip that emits light to display images. Micro-LED displays are attracting attention as next-generation display devices because they offer higher contrast, faster response times, and eliminate the need for color filters used in liquid crystal displays (LCDs) and organic EL displays, thus enabling thinner designs. In a micro-LED display, multiple micro-LED chips are densely packed in a planar arrangement.

[0003] In the manufacturing process of semiconductor devices such as micro LED displays, for example, a transfer laminate on which multiple wafer components are disposed on an adhesive layer is aligned with a driving circuit substrate, and the wafer components are peeled off from the transfer laminate to form an electrical connection with the driving circuit substrate (transfer step).

[0004] As a method for peeling off wafer components using a self-transfer printing laminate, one known method involves focusing laser light onto the back side of the support of the self-transfer printing laminate on an adhesive layer (e.g., Patent Document 1). This method is also known as laser ablation. Another known method involves incorporating thermally expandable particles or microcapsules into the adhesive layer. Through thermal bonding between the transfer laminate and the drive circuit board, the thermally expandable particles or microcapsules expand, thereby deforming the adhesive layer and reducing the bonding area, thus peeling off the wafer components (e.g., Patent Documents 2 and 3). Previous technical documents Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-138949 Patent Document 2: Japanese Patent Application Publication No. 2019-15899 Patent Document 3: Japanese Patent Application Publication No. 2003-7986 Summary of the Invention

[0006] [The problem that the invention aims to solve]

[0007] However, conventional methods for removing wafer components have the following problems: poor removal of wafer components makes it difficult to transfer wafer components with a high yield. Furthermore, when using conventional adhesive layers for laser ablation, there is also the problem of adhesive residue adhering to the wafer components. That is, for example, although it is possible to remove wafer components by laser ablation by increasing the output of laser light, there is a situation where the adhesive layer is torn during wafer removal, and adhesive residue adheres to the wafer components.

[0008] The purpose of this invention is to provide an adhesive tape for semiconductor device manufacturing that has excellent peeling performance for wafer components and can suppress paste residue on wafer components. [Technical means to solve the problem]

[0009] The present invention 1 is an adhesive tape for manufacturing semiconductor devices, which sequentially comprises a substrate, an etch layer, a barrier layer, and a first adhesive layer. The present invention 2 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 1, wherein the substrate is a resin film. The present invention 3 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 2, wherein the resin film is a polyester film. The present invention 4 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 1, 2 or 3, wherein the above-mentioned etched layer has an ultraviolet absorption rate of 90% or more at a wavelength of 365 nm. The present invention 5 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 1, 2, 3 or 4, wherein the storage elastic modulus G' of the etched layer at 23°C is 1×10 4 Pa ​​or more and 2×10 5 Pa or less. The present invention 6 is an adhesive tape for manufacturing semiconductor devices as described in present invention 1, 2, 3, 4 or 5, wherein the thickness of the barrier layer is 25 μm or less. The present invention 7 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 6, wherein the thickness of the barrier layer is 6 μm or less. The present invention 8 is an adhesive tape for manufacturing semiconductor devices as described in present invention 1, 2, 3, 4, 5, 6 or 7, wherein the barrier layer is a polyester film. The present invention 9 is an adhesive tape for manufacturing semiconductor devices, as described in the present invention 1, 2, 3, 4, 5, 6, 7 or 8, wherein the barrier layer has an easily bondable resin layer on the surface in contact with the first adhesive layer. The present invention 10 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8 or 9, wherein the tensile strength of the first adhesive layer is 1 MPa or more. The present invention 11 is an adhesive tape for manufacturing semiconductor devices as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, wherein the storage elastic modulus G' of the first adhesive layer at 23°C is 1×10 4 Pa ​​or more and 2×10 5 Pa or less. The present invention 12 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11, wherein the first adhesive layer contains an ABA-type block copolymer. The present invention 13 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 12, wherein, in the above-mentioned ABA-type block copolymer, block A contains a structure derived from an aromatic vinyl monomer, and block B contains a structure derived from a (meth)acrylic acid monomer. The present invention 14 is an adhesive tape for manufacturing semiconductor devices as described in the present invention 12 or 13, wherein the block B has a structure derived from a monomer containing cross-linking functional groups. The present invention 15 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13 or 14, wherein the gel content of the first adhesive layer is 70% by weight or more and 95% by weight or less. The present invention 16 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 or 15, wherein the thickness of the first adhesive layer is 5 μm or more and 30 μm or less. The present invention 17 is an adhesive tape for manufacturing semiconductor devices, such as the present invention 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 or 16, wherein the ball tack of the aforementioned adhesive tape for manufacturing semiconductor devices is No. 5 or higher. The present invention 18 is an adhesive tape for manufacturing semiconductor devices, such as the present invention 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16 or 17, wherein the surface peel strength of the first adhesive layer of the adhesive tape for manufacturing semiconductor devices is 1 MPa or less. The present invention 19 is an adhesive tape for manufacturing semiconductor devices, such as the present invention 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17 or 18, wherein the adhesion between the substrate and the etched layer is 6 N / 25 mm or more. The present invention 20 is an adhesive tape for manufacturing semiconductor devices, such as the present invention 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 or 19, wherein the adhesion between the etched layer and the barrier layer is 6 N / 25 mm or more. The present invention 21 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or 20, wherein the first adhesive layer is a hardened adhesive layer. The present invention 22 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or 21, which further has a second adhesive layer and sequentially has the second adhesive layer, the substrate, the etch layer, the barrier layer and the first adhesive layer. The present invention 23 is an adhesive tape for manufacturing semiconductor devices, as described in present inventions 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21 or 22, which is used in the manufacture of semiconductor devices having a step of irradiating laser light. The present invention will now be described in detail.

[0010] The inventors have discovered that an adhesive tape for manufacturing semiconductor devices, comprising a substrate, an etch layer, a barrier layer, and a first adhesive layer in sequence, can improve the peeling performance of wafer components even when wafer components are peeled off by laser etch, and can suppress paste residue on the wafer components, thereby completing the present invention.

[0011] The adhesive tape for manufacturing semiconductor devices of the present invention comprises, in sequence, a substrate, an etch layer, a barrier layer, and a first adhesive layer. By using the adhesive tape for semiconductor device manufacturing of the present invention, and by irradiating the aforementioned etched layer with laser light, deformation caused by etch can occur in the portion of the etched layer after being irradiated with laser light. Furthermore, the deformation of the laser-irradiated portion of the etched layer is transmitted to the barrier layer and the first adhesive layer, thereby allowing the wafer component disposed on the first adhesive layer to be peeled off. Additionally, at this time, the scattering of the etched layer caused by etch is suppressed by the barrier layer. Therefore, the adhesive tape for semiconductor device manufacturing according to the present invention improves the peeling performance of the wafer component and prevents the first adhesive layer from being torn during wafer component peeling, thereby preventing residue of the first adhesive layer from adhering to the wafer component.

[0012] Figure 1 shows a cross-sectional view, schematically illustrating an example of a step in which a wafer component disposed on an adhesive layer is peeled off using a conventional adhesive tape and by laser etching. In the step shown in Figure 1, a wafer component 1 is disposed on an adhesive layer 4 deposited on a substrate 5. The wafer component 1 is peeled off by laser light 8a irradiated by a laser light irradiation device 8, and an electrical connection (transfer step) is made between the wafer component 1 and the drive circuit board 7. The laminate 9 of the substrate 5 and the adhesive layer 4 can be, for example, a conventional single-sided adhesive tape in which the substrate 5 is a substrate such as a resin film and the adhesive layer 4 is composed only of an adhesive layer, or a laminate of a support in which the substrate 5 is a support such as a glass substrate and the adhesive layer 4 is a conventional double-sided adhesive tape (which may have a substrate) and a double-sided adhesive tape. In the steps shown in Figure 1, if laser light 8a is irradiated onto the adhesive layer 4, the portion of the adhesive layer 4 irradiated by laser light 8a deforms due to erosion. More specifically, if laser light 8a is irradiated onto the adhesive layer 4, the molecules of the adhesive layer 4 break down due to heat, becoming low-molecular-weight and evaporating instantaneously, or sublimating (decomposing and dissipating) due to high temperature. Therefore, the portion of the adhesive layer 4 irradiated by laser light 8a deforms. This allows the chip component 1 to be peeled off. By using laser light 8a, the peeling of the chip component 1 can be initiated over a very small area. Therefore, even in cases where extremely small chip components such as micro LED chips are arranged, the chip component 1 can be peeled off individually with high peeling performance. However, in the steps shown in Figure 1, as described above, the following problems exist: poor peeling of the chip component 1 occurs, or the adhesive layer 4 is torn during the peeling of the chip component 1, resulting in residue of the adhesive layer 4 adhering to the chip component 1.

[0013] Figure 2 shows a cross-sectional view, which schematically illustrates an example of the adhesive tape for manufacturing semiconductor devices according to the present invention. In the adhesive tape 12 for manufacturing semiconductor devices according to the present invention shown in Figure 2, a substrate 5, an etched layer 10, a barrier layer 11, and a first adhesive layer 4a are sequentially laminated.

[0014] Figure 3 shows a cross-sectional view, schematically illustrating an example of the steps of using the adhesive tape for semiconductor device manufacturing of the present invention to peel off a wafer component disposed on an adhesive layer by laser etching. In the steps shown in Figure 3, similar to those shown in Figure 1, a wafer component 1 is disposed on the first adhesive layer 4a, and the wafer component 1 is peeled off by laser light 8a irradiated from the laser irradiation device 8. However, in the steps shown in Figure 3, by irradiating the etched layer 10 with laser light 8a, the portion of the etched layer 10 irradiated by laser light 8a can undergo deformation caused by etching. Furthermore, the deformation of the portion of the etched layer 10 irradiated by laser light 8a is transmitted to the barrier layer 11 and the first adhesive layer 4a, thus allowing the wafer component 1 disposed on the first adhesive layer 4a to be peeled off. Also, at this time, the scattering of the etched layer 10 caused by etching is suppressed by the barrier layer 11.

[0015] By having the above-mentioned substrate, the adhesive tape for manufacturing semiconductor devices of the present invention becomes an adhesive tape with moderate toughness and excellent processability. The aforementioned substrate is not particularly limited, but from the perspective of removing wafer components by laser etching, it is preferable to have a moderate ultraviolet transmittance. The ultraviolet transmittance of the aforementioned substrate is not particularly limited, but the preferred lower limit for ultraviolet transmittance at a wavelength of 365 nm is 1%, a more preferred lower limit is 50%, and a further preferred lower limit is 80%. The upper limit for ultraviolet transmittance at a wavelength of 365 nm is not particularly limited, but practically the upper limit is around 95%. Furthermore, regarding the ultraviolet transmittance of the aforementioned substrate at a wavelength of 365 nm, it can be measured, for example, using a spectrophotometer (UV-2600i, manufactured by Shimadzu Corporation, or an equivalent) in accordance with JIS L1925.

[0016] From the viewpoint of adjusting the ultraviolet transmittance at a wavelength of 365 nm to the aforementioned range, the substrate is preferably a resin film. The aforementioned resin film is not particularly limited, but for the purpose of excellent heat resistance, a polyester film is preferred. Examples of such polyester films include those made of polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. Polyethylene terephthalate films are preferred. Furthermore, from the viewpoint of excellent ultraviolet transmittance, an acrylic resin film is preferred. Examples of such acrylic resin films include those made of polymethyl methacrylate. Also, examples of such resin films include those made of polyacetal, polyamide, polycarbonate, polyphenylene ether, ultra-high molecular weight polyethylene, polystyrene, polyarylate, polyurethane, polyetherurethane, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluoropolymers, and liquid crystal polymers.

[0017] The thickness of the aforementioned substrate is not particularly limited, but the preferred lower limit is 5 μm and the preferred upper limit is 188 μm. By keeping the thickness of the aforementioned substrate within the above range, an adhesive tape with moderate toughness and excellent processability can be manufactured. The preferred lower limit of the thickness of the aforementioned substrate is 12 μm, and the preferred upper limit is 100 μm.

[0018] There is no particular limitation on the haze of the aforementioned substrate, but from the viewpoint of enabling efficient laser light penetration and further improving the peeling performance of wafer components, a lower haze is preferable. The upper limit of the haze of the aforementioned substrate is preferably 10%, the more preferably 5%, and even more preferably 1%. There is no particular limitation on the lower limit of the haze of the aforementioned substrate, and the lower the better, but in practice, the lower limit is about 0.1%. Furthermore, the haze of the aforementioned substrate can be measured, for example, using a haze meter (manufactured by Nippon Denshoku Kogyo Co., Ltd., NDH4000).

[0019] The aforementioned erosion layer is not particularly limited, as long as it is a layer deformed by irradiation with laser light, and it may or may not be adhesive. From the perspective of deformation caused by etching through laser irradiation, the aforementioned etched layer preferably has a moderate ultraviolet absorption rate. There is no particular limitation on the ultraviolet absorption rate of the etched layer at a wavelength of 365 nm, but a preferred lower limit is 90%, and a more preferred lower limit is 99%. If the ultraviolet absorption rate at a wavelength of 365 nm is within the aforementioned range, then the laser stimulation in the etched layer will be efficiently converted into heat or vibration, thus easily inducing deformation caused by etching, further improving the peeling performance of wafer components on adhesive tapes for semiconductor device manufacturing. There is no particular limitation on the upper limit of the ultraviolet absorption rate at a wavelength of 365 nm, but the practical upper limit is approximately 99.9%. Furthermore, the ultraviolet absorption rate of the aforementioned etched layer at a wavelength of 365 nm can be measured, for example, using a spectrophotometer (UV-2600i, manufactured by Shimadzu Corporation, or an equivalent), according to JIS L1925.

[0020] From the viewpoint of adjusting the ultraviolet absorption rate at a wavelength of 365 nm to the aforementioned range, the aforementioned etched layer preferably contains an ultraviolet absorber. The aforementioned ultraviolet absorbers are not particularly limited; for example, benzotriazole ultraviolet absorbers and hydroxyphenyltriazole ultraviolet absorbers can be cited. It is a type of ultraviolet absorber, etc. Examples include: ethylhexyl methoxycinnamate, octyl methoxycinnamate, ethylhexyl p-methoxycinnamate, diethylaminohydroxybenzoyl benzoate, and diethylhexyloxyphenol methoxyphenyl trimethylolpropionate. , etc. Among these, from the viewpoint of excellent compatibility with other components in the aforementioned etched layer, benzotriazole-based ultraviolet absorbers and hydroxyphenyltriazole are preferred. These are ultraviolet absorbers. These ultraviolet absorbers can be used alone or in combination of two or more.

[0021] The content of the aforementioned ultraviolet absorber is not particularly limited, but a preferred lower limit is 4 parts by weight relative to 100 parts by weight of the base polymer contained in the aforementioned etch layer. If the content of the aforementioned ultraviolet absorber is 4 parts by weight or more, the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. A more preferred lower limit for the content of the aforementioned ultraviolet absorber is 6 parts by weight, further preferably 8 parts by weight, further preferably 10 parts by weight, and even more preferably 15 parts by weight. There is no particular upper limit to the content of the aforementioned ultraviolet absorber, but from the viewpoint of ensuring the adhesion between the aforementioned etched layer and the aforementioned substrate or the aforementioned barrier layer, a preferred upper limit is 30 parts by weight. Furthermore, if the adhesion between the aforementioned etched layer and the aforementioned substrate or the aforementioned barrier layer is insufficient, the following defects may occur, such as warping at the cut ends when the adhesive tape for semiconductor device manufacturing is cut to the required bandwidth (end warping).

[0022] The storage elastic modulus (shear storage elastic modulus) G' of the aforementioned etched layer at 23°C and 1 Hz is not particularly limited, but the preferred lower limit is 1 × 10⁴ Pa, and the preferred upper limit is 2 × 10⁵ Pa. If the aforementioned storage elastic modulus G' is within the above range, the aforementioned etched layer can be moderately deformed by irradiation with laser light, thereby further improving the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing. The more preferred lower limit of the aforementioned storage elastic modulus G' is 1.5 × 10⁴ Pa, the more preferred upper limit is 1.5 × 10⁵ Pa, and further preferably the lower limit is 2.0 × 10⁴ Pa, and further preferably the upper limit is 1.0 × 10⁵ Pa. Furthermore, regarding the storage elastic modulus G' of the aforementioned etched layer at 23°C and 1 Hz, for example, it can be obtained as the storage elastic modulus at 23°C when measuring the dynamic viscoelastic spectrum from -40°C to 140°C under a simple heating mode with a heating rate of 5°C / min and 1 Hz using a viscoelastic spectrometer (manufactured by IT Measurement & Control Co., Ltd., Japan, DVA-200, or equivalent).

[0023] The aforementioned etched layer may or may not be adhesive, but from the viewpoint of ensuring adhesion between the etched layer and the substrate, such as suppressing defects like end lifting, the adhesion between the substrate and the etched layer is preferably 6 N / 25 mm or more, and more preferably 10 N / 25 mm or more. There is no particular upper limit to the adhesion between the substrate and the etched layer, but a preferred upper limit is 50 N / 25 mm. Furthermore, from the viewpoint of ensuring the adhesion between the aforementioned etched layer and the aforementioned barrier layer, for example, suppressing defects such as end lifting, the adhesion between the aforementioned etched layer and the aforementioned barrier layer is preferably 6 N / 25 mm or more, and more preferably 10 N / 25 mm or more. There is no particular upper limit to the adhesion between the aforementioned etched layer and the aforementioned barrier layer, but a preferred upper limit is 50 N / 25 mm. Furthermore, the adhesion mentioned here can be determined, for example, by peeling the sample in a 180° direction at a tensile speed of 300 mm / min using an Autograph (manufactured by Shimadzu Corporation) or similar instrument, according to JIS Z0237, at a temperature of 23°C and a relative humidity of 50%, and measuring the adhesion at 180° (N / 25 mm).

[0024] Examples of base polymers contained in the aforementioned etch layer include ABA-type block copolymers, acrylic copolymers, urethane copolymers, and polysiloxane adhesives. Among these, ABA-type block copolymers and acrylic copolymers are preferred for ease of adjusting the storage elastic modulus G' of the etch layer to the aforementioned range, thereby further improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing. From the viewpoint that the etch layer does not experience excessive etch at the irradiated area when irradiated with laser light, ABA-type block copolymers are even more preferred. Furthermore, from the viewpoint of ensuring adhesion between the etch layer and the substrate or barrier layer, such as suppressing defects like end-capping, acrylic copolymers are even more preferred. Regarding the ABA-type block copolymer and the acrylic copolymer, which are the base polymers contained in the above-mentioned etched layer, the same polymers as the ABA-type block copolymer and the acrylic copolymer described below as the base polymers contained in the above-mentioned first adhesive layer can be used.

[0025] When the base polymer contained in the aforementioned etched layer is an ABA-type block copolymer, the SP value of the B-block copolymer is not particularly limited, but is preferably 9.5 or higher. By making the SP value 9.5 or higher, the adhesion to the aforementioned substrate or barrier layer becomes better, and the etched layer is less likely to peel off during etch, thereby further improving the peel performance of the wafer component. The aforementioned SP value is more preferably 9.6 or higher, and even more preferably 9.8 or higher. The upper limit of the aforementioned SP value is not particularly limited, but in terms of difficulty in synthesis, the practical upper limit is around 14. Furthermore, the SP value is referred to as the solubility parameter and is used as an indicator of polarity. In this specification, the SP value can be calculated using the Fedors method (RF Fedors, Polym. Eng. Sci., 14(2), 147-154(1974)). Also, regarding the SP value of B-block copolymers of ABA-type block copolymers, it can be calculated based on the SP value of each repeating unit in the B-block copolymer using their blending ratio (molar ratio).

[0026] The thickness of the aforementioned etched layer is not particularly limited, but a preferred lower limit is 3 μm and a preferred upper limit is 50 μm. If the thickness of the aforementioned etched layer is within the aforementioned range, the etched layer can be moderately deformed by irradiation with laser light, thereby further improving the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing. A more preferred lower limit of the aforementioned etched layer thickness is 5 μm, a more preferred upper limit is 30 μm, and further a more preferred lower limit is 8 μm, and further a more preferred upper limit is 20 μm.

[0027] The gel content of the aforementioned etched layer is not particularly limited, but a preferred lower limit is 70% by weight, and a preferred upper limit is 95% by weight. If the gel content is 70% by weight or more, the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. If the gel content is 95% by weight or less, the retention performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. A more preferred lower limit of the aforementioned gel content is 80% by weight, and a more preferred upper limit is 90% by weight. Furthermore, the gel content of the aforementioned etched layer can be determined by the following method. 0.1 g of the etched layer (etched layer composition) was extracted from the adhesive tape used in semiconductor device manufacturing and immersed in 50 mL of ethyl acetate. The mixture was then shaken for 24 hours at 23°C and 200 rpm. After shaking, the ethyl acetate was separated from the swelled etched layer composition by a metal mesh (200 mesh). The separated etched layer composition was dried at 110°C for 1 hour. The weight of the dried etched layer composition, including the metal mesh, was measured, and the gel fraction of the etched layer was calculated using the following formula. Gel fraction (weight %) = 100 × (W1 - W2) / W0 (W0: initial weight of the etched layer composition, W1: weight of the etched layer composition including the metal mesh after drying, W2: initial weight of the metal mesh) However, when the aforementioned components of the etched layer cannot be completely dissolved in ethyl acetate, solvents such as toluene, hexane, or water are used instead of ethyl acetate. Specifically, when the etched layer components contain, for example, styrene-based elastomers, toluene or hexane is used, and when they contain polyvinyl alcohol, hot water at 90°C is used.

[0028] The aforementioned barrier layer is not particularly limited, as long as it is a layer capable of suppressing the scattering of the aforementioned erosion layer and capable of deforming according to the deformation of the portion of the aforementioned erosion layer irradiated by laser light. From the viewpoint of being able to suppress the scattering of the aforementioned erosion layer and being capable of deforming according to the deformation of the portion of the aforementioned erosion layer irradiated by laser light, the aforementioned barrier layer is preferably a resin film. The aforementioned resin film is not particularly limited, but from the viewpoint of being able to suppress the scattering of the aforementioned etched layer and to deform according to the deformation of the portion of the aforementioned etched layer irradiated by laser light, polyester film and polyolefin film are preferred, and polyester film is more preferred. Examples of the aforementioned polyester film include films composed of polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. Examples of the aforementioned polyolefin film include films composed of polyethylene, non-stretched polypropylene, biaxially stretched polypropylene, cyclic olefin polymers, and cyclic olefin copolymers. Furthermore, the aforementioned resin film may also be composed of, for example, acrylic resin, polyacetal, polyamide, polycarbonate, polyphenylene ether, para-polystyrene, polyarylate, polyurethane, polyetherurethane, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, etc.

[0029] Preferably, the barrier layer has an easy-bonding treatment layer on the surface that contacts the first adhesive layer. By having this easy-bonding treatment layer, the adhesion between the barrier layer and the first adhesive layer is further improved. The easy-bonding treatment layer is not particularly limited; examples include corona treatment layers and primer treatment layers.

[0030] The thickness of the aforementioned barrier layer is not particularly limited, but a preferred lower limit is 1 μm and a preferred upper limit is 25 μm. If the thickness of the barrier layer is 1 μm or more, the scattering of the aforementioned etch layer can be sufficiently suppressed. If the thickness of the barrier layer is 25 μm or less, it can be sufficiently deformed according to the deformation of the portion of the aforementioned etch layer after being irradiated with laser light, thereby further improving the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing. A more preferred lower limit of the aforementioned thickness is 2 μm, a more preferred upper limit is 10 μm, and a more preferably upper limit is 6 μm.

[0031] The haze of the aforementioned barrier layer is not particularly limited. However, for the purpose of improving visibility and facilitating laser illumination of the correct areas on the wafer, thereby further improving the wafer component stripping performance, a lower haze is preferable. The preferred upper limit for the haze of the aforementioned barrier layer is 10%, a more preferred upper limit is 5%, and a further preferred upper limit is 1%. The lower limit for the aforementioned haze is not particularly limited, but lower is better; practically, the lower limit is approximately 0.1%. Furthermore, the haze of the aforementioned barrier layer can be measured using a haze meter (manufactured by Nippon Denshoku Kogyo Co., Ltd., NDH4000).

[0032] The barrier layer may also have an easily bondable resin layer on the surface in contact with the first adhesive layer. If the easily bondable resin layer is present, the adhesion between the barrier layer and the first adhesive layer becomes stronger, and the first adhesive layer is less likely to peel off from the barrier layer during wafer transfer, thus suppressing the generation of paste residue on the wafer.

[0033] The resin constituting the above-mentioned easy-bonding resin layer is not particularly limited, and examples include: polyester resin, polyurethane resin, and nitrile rubber.

[0034] The aforementioned easily bondable resin layer may further contain known additives such as plasticizers, resins, surfactants, waxes, and microparticle fillers. These additives may be used alone or in combination of two or more.

[0035] The elastic modulus (MPa) of the aforementioned easily bondable resin layer obtained by nanoindentation is not particularly limited, but the preferred lower limit is 4000 MPa and the preferred upper limit is 10000 MPa. Furthermore, the elastic modulus of the aforementioned resin layer obtained by nanoindentation can be obtained, for example, by using a nanoindenter (manufactured by Hysitron Inc., Triboindenter TI-950), under specific temperature (25°C) and single indentation method conditions of indentation speed 400 nm / sec, pull-out speed 400 nm / sec, and indentation depth 100 nm, perpendicularly pressing a diamond Berkovich-type (triangular pyramidal) probe against the test layer to obtain a displacement-load hysteresis curve. The elastic modulus is then obtained by numerically processing this displacement-load hysteresis curve using the software (triboscan) attached to the measuring device.

[0036] The thickness of the aforementioned easy-adhesive resin layer is not particularly limited, but the preferred lower limit is 0.05 μm, and the preferred upper limit is 0.3 μm. If the thickness of the aforementioned easy-adhesive resin layer is 0.05 μm or more, the adhesion to the aforementioned first adhesive layer becomes higher. If the thickness of the aforementioned adhesive resin layer is 0.3 μm or less, deformation is more likely to occur during etching, thereby further improving the peeling performance of the wafer components. The more preferred lower limit of the thickness of the aforementioned easy-adhesive resin layer is 0.08 μm, the more preferred upper limit is 0.2 μm, and further preferably the lower limit is 0.1 μm, and further preferably the upper limit is 0.18 μm.

[0037] The first adhesive layer is not particularly limited, but it is preferably a pressure-sensitive adhesive layer. Furthermore, from the viewpoint of further improving the peel performance of the wafer components, the first adhesive layer may also be a thermosetting type, photosetting type, or other curing type adhesive layer. Examples of base polymers contained in the first adhesive layer include ABA-type block copolymers, acrylic copolymers, amine copolymers, and polysiloxane adhesives. Among these, ABA-type block copolymers and acrylic copolymers are preferred in that they facilitate the adjustment of the tensile strength, storage modulus G', and gel fraction of the first adhesive layer to the following ranges, thereby further improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing and suppressing paste residue on the wafer components. From the same perspective, ABA-type block copolymers are more preferred.

[0038] The aforementioned ABA-type block copolymer is a copolymer comprising block A (hereinafter also referred to as "hard segment") as a rigid structure and block B (hereinafter also referred to as "soft segment") as a flexible structure. The aforementioned ABA-type block copolymers sometimes employ the following phase separation structures: two blocks are difficult to integrate, resulting in a non-uniform phase separation structure with spherical islands formed by the aggregation of block A scattered within the sea of ​​block B; or a non-uniform phase separation structure with cylindrical structures formed by the aggregation of block A scattered within the sea of ​​block B. This phase separation structure with scattered spherical islands is also called a sphere-like phase separation structure, and the phase separation structure with scattered cylindrical structures is called a cylinder-like phase separation structure. Furthermore, since the islands in the aforementioned phase separation structures serve as potential cross-linking points, rubber-like elasticity can be imparted to the aforementioned ABA-type block copolymers. Therefore, it is easy to adjust the tensile strength, storage modulus G', gel fraction, etc., of the aforementioned first adhesive layer to the following ranges, further improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing, and further suppressing paste residue on the wafer components. The ABA-type block copolymers mentioned above are preferably ABA-type triblock copolymers.

[0039] In the above-mentioned ABA-type block copolymers, block A is not particularly limited as long as it has a rigid structure, but it is preferred to contain a structure derived from aromatic vinyl monomers. Block A described above may also have, without impairing the effects of the present invention, a structure derived from aromatic vinyl monomers, or, for example, a structure derived from compounds with cyclic structures or compounds with shorter side-chain substituents.

[0040] Examples of the aforementioned aromatic vinyl monomers include styrene, α-methylstyrene, p-methylstyrene, and chlorostyrene. These aromatic vinyl monomers can be used alone or in combination of two or more. Among them, styrene is preferred in terms of further improving the peeling performance of the wafer parts of the adhesive tape used in semiconductor device manufacturing and further suppressing paste residue on the wafer parts. Furthermore, in this specification, the term "structure derived from aromatic vinyl monomers" refers to the structure shown in the following general formula (1) or (2).

[0041]

[0042] In general formulas (1) and (2), R1 represents a substituent having an aromatic ring. Examples of substituents R1 having an aromatic ring include phenyl, methylphenyl, and chlorophenyl.

[0043] In the aforementioned ABA-type block copolymer, the content of the structure derived from the aromatic vinyl monomer is not particularly limited, but is preferably 1% by weight or more and 30% by weight or less. By keeping the content of the structure derived from the aromatic vinyl monomer within the aforementioned range, the tensile strength of the first adhesive layer is increased, which can further suppress paste residue on the wafer components. The more preferably lower limit of the content of the structure derived from the aromatic vinyl monomer is 5% by weight, further preferably 8% by weight, particularly preferably 10% by weight, and more preferably 28% by weight, further preferably 25% by weight, and particularly preferably 20% by weight.

[0044] In the aforementioned ABA-type block copolymer, block B is not particularly limited as long as it has a flexible structure. However, in terms of easily adjusting the tensile strength, storage modulus G', and gel fraction of the first adhesive layer to the following ranges, it is preferable to have a structure derived from a conjugated diene monomer or a structure derived from a (meth)acrylic acid monomer. Furthermore, in terms of enabling the first adhesive layer to have more suitable adhesion and further improving the retention performance of wafer components in the adhesive tape for semiconductor device manufacturing, block B is more preferably composed of a structure derived from a (meth)acrylic acid monomer. Block B can also have a structure derived from monomers other than the conjugated diene monomer and the (meth)acrylic acid monomer, without compromising the effects of the present invention.

[0045] Examples of the aforementioned conjugated diene monomers include: 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, 1,3-pentadiene, 2-methyl-1,3-octadiene, 1,3-hexadiene, 1,3-cyclohexadiene, 4,5-diethyl-1,3-octadiene, 3-butyl-1,3-octadiene, laurylene, chloroprene, etc. These conjugated diene monomers can be used alone or in combination of two or more. Among these, 1,3-butadiene and isoprene are preferred in terms of high polymerization reactivity and ease of industrial availability.

[0046] The double bonds (unsaturated bonds) in the aforementioned structures derived from conjugated diene monomers can be converted into saturated bonds through hydrogenation. Furthermore, for example, if the double bonds (unsaturated bonds) in the aforementioned structures derived from conjugated diene monomers, derived from the structure of 1,3-butadiene, are hydrogenated, they are converted into an ethylene-butene structure. The hydrogenation ratio (hydrogenation rate) is not particularly limited; partial hydrogenation or full hydrogenation is permissible. Furthermore, the hydrogenation ratio (hydrogenation rate) can be calculated using deuterated chloroform as a solvent by measuring the 1H-NMR spectrum at 20 Hz.

[0047] In the aforementioned ABA-type block copolymer, the content of the structure derived from the conjugated diene monomer is not particularly limited, as long as the effects of the present invention are achieved. Preferably, it is 0% by weight or more and 99% by weight or less. More preferably, the content of the structure derived from the conjugated diene monomer is 30% by weight or more, further preferably 40% by weight or more, further preferably 70% by weight or more, and even more preferably 80% by weight or more. Furthermore, the content of the structure derived from the conjugated diene monomer is more preferably 95% by weight or less, and further preferably 90% by weight or less. The content of the above-mentioned structure derived from conjugated diene monomer is preferably 70% by weight or more and 95% by weight or less, and more preferably 80% by weight or more and 90% by weight or less.

[0048] The aforementioned (meth)acrylic acid monomers may be a single component or a combination of monomers may be used. Furthermore, in this specification, the term "structure derived from (meth)acrylic acid monomers" refers to the structure shown in the following general formula (5) or (6).

[0049]

[0050] In general formulas (5) and (6), R3 represents a side chain. Examples of side chains R3 include: methyl, ethyl, propyl, butyl, isobutyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, isooctyl, 2-ethylhexyl, nonyl, isononyl, decyl, lauryl, stearyl, isostearyl, isocamphenyl, etc.

[0051] Examples of the aforementioned (meth)acrylate monomers include, for example, methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, isobutyl methacrylate, pentyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, heptyl methacrylate, octyl methacrylate, isooctyl methacrylate, 2-ethylhexyl methacrylate, nonyl methacrylate, isononyl methacrylate, decyl methacrylate, lauryl methacrylate, stearyl methacrylate, isostearyl methacrylate, and isocamphenyl methacrylate. These (meth)acrylate monomers can be used alone or in combination of two or more. From the viewpoint of achieving a balance between the peeling performance of wafer components and the inhibition effect on paste residue on wafer components, butyl methacrylate, 2-ethylhexyl methacrylate, and lauryl methacrylate are preferred. From the viewpoint of further suppressing paste residue on wafer components, butyl (meth)acrylate and 2-ethylhexyl (meth)acrylate are preferred. Furthermore, acrylates of the like are even more preferred.

[0052] In the aforementioned ABA-type block copolymer, the glass transfer temperature of block B is not particularly limited, but is preferably above -30°C and below 0°C. By keeping the glass transfer temperature of block B within the aforementioned range, the peel performance of the adhesive tape on the wafer parts is further improved, even when transferring wafer parts with protrusions or smaller wafer parts, and the residue of paste on the wafer parts can be further suppressed. The more preferred lower limit of the glass transfer temperature of block B is -28°C, further preferably -25°C, more preferably -5°C, and further preferably -10°C. Furthermore, the glass transition temperature of block B can be determined, for example, by using a differential scanning calorimeter (manufactured by TA Instruments, Hitachi High-Tech Science, etc.). More specifically, the following value can be used: the value obtained in the second run of the measurement of ABA-type block copolymers using a differential scanning calorimeter (manufactured by Hitachi High-Tech Science, SII Exstar 6000 / DSC 6220) under nitrogen atmosphere and a heating rate of 10°C / min. Furthermore, the peaks originating from block A and block B can be obtained, but the peak on the lower temperature side is taken as the peak originating from block B to determine the glass transition temperature of block B.

[0053] There is no particular limitation on the method of adjusting the glass transition temperature of the block B to the range described above. However, in order to adjust the glass transition temperature of the block B to the range described above, the (meth)acrylic monomer is preferably a (meth)acrylic ester monomer containing a glass transition temperature of 0°C or higher when the homopolymer is formed.

[0054] By including the aforementioned (meth)acrylate monomers in a glass transition temperature of 0°C or higher when forming the homopolymer, the storage modulus of the first adhesive layer can be adjusted to a better range. Examples of (meth)acrylate monomers with a glass transition temperature of 0°C or higher when forming the homopolymer include: methyl acrylate, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, tributyl acrylate, tributyl methacrylate, cyclohexyl acrylate, cyclohexyl methacrylate, isoborneol acrylate, isoborneol methacrylate, and benzyl methacrylate. Methyl acrylate and methyl methacrylate are particularly preferred.

[0055] In the aforementioned ABA-type block copolymer, the content of the structure derived from the (meth)acrylate monomer with a glass transition temperature of 0°C or higher during the preparation of the homopolymer is not particularly limited, and can be 0% by weight, with a preferred lower limit of 35% by weight. If the content of the structure derived from the (meth)acrylate monomer with a glass transition temperature of 0°C or higher during the preparation of the homopolymer is 35% by weight or more, the peeling performance of the wafer parts of the adhesive tape is further improved. A more preferred lower limit for the content of the structure derived from the (meth)acrylate monomer with a glass transition temperature of 0°C or higher during the preparation of the homopolymer is 40% by weight. There is no particular limit to the content of (meth)acrylate monomers derived from the structure of homopolymers with a glass transition temperature of 0°C or higher, but from the viewpoint of temporarily fixing wafer parts, a preferred upper limit is 60% by weight, and a more preferred upper limit is 50% by weight.

[0056] The aforementioned block B preferably contains a structure derived from a monomer containing a cross-linking functional group. By incorporating the aforementioned block B with a structure derived from a monomer containing crosslinking functional groups, the cohesive strength of the first adhesive layer is enhanced due to the crosslinking of the crosslinking functional groups. This improves the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing and suppresses paste residue on the wafer components. The aforementioned crosslinking functional groups may be crosslinked or uncrosslinked, but are preferably crosslinked. However, even with an uncrosslinked structure, the cohesive strength of the first adhesive layer is enhanced due to the interaction between the functional groups, improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing and suppressing paste residue on the wafer components. Furthermore, in this specification, the structure derived from a monomer having crosslinking functional groups refers to the structure shown in the following general formula (3) or (4).

[0057]

[0058] In general formulas (3) and (4), R2 represents a substituent containing at least one crosslinking functional group. Examples of crosslinking functional groups include carboxyl, hydroxyl, epoxy, double bond, triple bond, amino, amide, nitrile, etc. Furthermore, the substituent R2 containing at least one crosslinking functional group may include alkyl, ether, carbonyl, ester, carbonate, amide, amino ester, etc. as its constituent elements.

[0059] The monomers with cross-linking functional groups mentioned above are not particularly limited, and examples include: monomers containing carboxyl groups, monomers containing hydroxyl groups, monomers containing epoxy groups, monomers containing double bonds, monomers containing triple bonds, monomers containing amino groups, monomers containing amide groups, monomers containing amide groups, and monomers containing nitrile groups. These monomers with cross-linking functional groups can be used alone or in combination of two or more. In terms of further improving the peel performance of wafer parts of adhesive tapes for semiconductor device manufacturing and further suppressing paste residue on wafer parts, it is preferable to select at least one from the group consisting of monomers containing carboxyl groups, monomers containing hydroxyl groups, monomers containing epoxy groups, monomers containing double bonds, monomers containing triple bonds, and monomers containing amide groups. Examples of the aforementioned carboxyl-containing monomers include (meth)acrylic acid and other (meth)acrylic acid monomers. Examples of the aforementioned hydroxyl-containing monomers include hydroxyalkyl acrylates or hydroxyalkyl methacrylates such as 4-hydroxybutyl (meth)acrylic acid and 2-hydroxyethyl (meth)acrylic acid. Examples of the aforementioned epoxy-containing monomers include glycidyl (meth)acrylic acid. Examples of the aforementioned monomers containing double bonds include allyl (meth)acrylic acid and hexanediol di(meth)acrylic acid. Examples of the aforementioned monomers containing triple bonds include propargyl (meth)acrylic acid. Examples of the aforementioned amide-containing monomers include (meth)acrylamide. Among these, in terms of further improving the peel performance of wafer parts of adhesive tapes for semiconductor device manufacturing and further suppressing paste residue on wafer parts, monomers containing carboxyl groups and monomers containing hydroxyl groups are preferred. Furthermore, it is more preferably a (meth)acrylic monomer and a hydroxyalkyl acrylate, and even more preferably acrylic acid, 2-hydroxyethyl acrylate and 4-hydroxybutyl acrylate.

[0060] Furthermore, it is preferable that, in addition to the aforementioned block B, the aforementioned block A also contains the aforementioned structure derived from a monomer containing a cross-linking functional group.

[0061] In the aforementioned ABA-type block copolymer, the content of the monomer structure derived from the crosslinking functional group (the sum of the content in block A and the content in block B) is not particularly limited, but is preferably 0.1% by weight or more and 30% by weight or less. By keeping the content of the monomer structure derived from the crosslinking functional group within the aforementioned range, the cohesive force of the first adhesive layer is further improved, the peeling performance of the wafer parts of the adhesive tape for semiconductor device manufacturing is further improved, and paste residue on the wafer parts can be further suppressed. The lower limit of the content of the monomer structure derived from the crosslinking functional group is more preferably 0.5% by weight, and more preferably 1% by weight, and more preferably 25% by weight, and more preferably 20% by weight.

[0062] In the aforementioned ABA-type block copolymer, the content of block A (hard segment) is not particularly limited, but is preferably 1% by weight or more and 40% by weight or less. By keeping the content of block A within the aforementioned range, the tensile strength of the first adhesive layer is increased, which can further suppress paste residue on the wafer components. The more preferably lower limit of the content of block A is 2% by weight, further preferably 5% by weight, and particularly preferably 10% by weight. The more preferably upper limit of the content of block A is 35% by weight, further preferably 30% by weight, further preferably 25% by weight, further preferably 22% by weight, and particularly preferably 20% by weight.

[0063] The weight-average molecular weight (Mw) of the aforementioned ABA-type block copolymer is not particularly limited, but is preferably between 50,000 and 800,000. By keeping the weight-average molecular weight within the aforementioned range, the tensile strength, storage modulus G', gel fraction, etc., of the aforementioned first adhesive layer can be easily adjusted to the following ranges, thereby further improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing and further suppressing paste residue on the wafer components. The preferred lower limit of the aforementioned weight-average molecular weight is 75,000, further preferably 100,000, and further preferably 200,000. The preferred upper limit of the aforementioned weight-average molecular weight is 600,000. Furthermore, the aforementioned weight-average molecular weight can be calculated, for example, using GPC (Gel Permeation Chromatography) to convert to standard polystyrene. More specifically, for example, a Waters 2690 Separations Module can be used as the measuring instrument, a Showa Denko G.K.K.K.K.K.K.L. GPC KF-806L can be used as the column, ethyl acetate can be used as the solvent, and the determination can be performed at a sample flow rate of 1 mL / min and a column temperature of 40°C.

[0064] The SP value of the aforementioned ABA-type block copolymer is not particularly limited, but is preferably 10 or less. By setting the SP value to 10 or less, adhesion to wafer components can be suppressed, and peel performance can be further improved. The aforementioned SP value is more preferably 9.98 or less, and even more preferably 9.95 or less. The lower limit of the aforementioned SP value is not particularly limited, but in terms of difficulty in synthesis, the practical lower limit is around 8. Furthermore, the aforementioned SP value is referred to as the solubility parameter and is used as an indicator of polarity. In this specification, the SP value can be calculated using the Fedors method (RF Fedors, Polym. Eng. Sci., 14(2), 147-154(1974)). Also, regarding the SP value of ABA-type block copolymers, it can be calculated based on the SP value of each repeating unit in the copolymer, using their blending ratio (molar ratio).

[0065] To obtain the ABA-type block copolymer, simply allow the monomers of block A and block B to undergo free radical reactions in the presence of a polymerization initiator to obtain block A and block B, respectively, and then allow them to react or copolymerize. Alternatively, after obtaining block A, the monomers of block B can be added to continue copolymerization. As a method for carrying out free radical reactions, i.e. polymerization, previously known methods can be used, such as solution polymerization (boiling point polymerization or isothermal polymerization), emulsion polymerization, suspension polymerization, bulk polymerization, etc.

[0066] The acrylic copolymer contained in the first adhesive layer is a copolymer having a structure derived from (meth)acrylic monomers. As the aforementioned (meth)acrylic monomer, examples include monomers identical to those used in the aforementioned ABA-type block copolymer. From the viewpoint of balancing the peeling performance of the wafer components with the effect of inhibiting paste residue on the wafer components, butyl (meth)acrylate and 2-ethylhexyl (meth)acrylate are preferred, and butyl acrylate and 2-ethylhexyl acrylate are even more preferred.

[0067] The aforementioned acrylic copolymer preferably contains a structure derived from monomers with crosslinking functional groups. By incorporating the aforementioned acrylic copolymer with a structure derived from monomers containing crosslinking functional groups, the cohesive strength of the first adhesive layer increases due to the crosslinking of the crosslinking functional groups. This improves the peel performance of the wafer components in the adhesive tape for semiconductor device manufacturing and suppresses paste residue on the wafer components. The crosslinking functional groups may be crosslinked or uncrosslinked, but are preferably crosslinked. However, even when maintaining an uncrosslinked structure, the cohesive strength of the first adhesive layer increases due to the interaction between the functional groups, improving the peel performance of the wafer components in the adhesive tape for semiconductor device manufacturing and suppressing paste residue on the wafer components. As a monomer with crosslinking functional groups, examples of monomers with crosslinking functional groups that are the same as those in the ABA-type block copolymers mentioned above can be cited.

[0068] In the aforementioned acrylic copolymer, the content of the structure derived from the monomer having crosslinking functional groups is not particularly limited, but is preferably 0.1% by weight or more and 30% by weight or less. By keeping the content of the structure derived from the monomer having crosslinking functional groups within the aforementioned range, the cohesive force of the first adhesive layer is further increased, the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved, and paste residue on the wafer components can be further suppressed. The lower limit of the content of the structure derived from the monomer having crosslinking functional groups is more preferably 0.5% by weight, and more preferably 1% by weight, and more preferably 25% by weight, and more preferably 20% by weight.

[0069] The weight-average molecular weight (Mw) of the aforementioned acrylic copolymer is not particularly limited, but is preferably 200,000 or more and 2,000,000 or less. By keeping the weight-average molecular weight within the aforementioned range, the tensile strength, storage modulus G', gel fraction, etc., of the aforementioned first adhesive layer can be easily adjusted to the following ranges, thereby further improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing and further suppressing paste residue on the wafer components. The preferred lower limit of the aforementioned weight-average molecular weight is 400,000, and the preferred upper limit is 1,500,000.

[0070] The SP value of the aforementioned acrylic copolymer is not particularly limited, but is preferably 10 or below. By setting the SP value to 10 or below, adhesion to wafer components can be suppressed, further improving peel performance. The SP value is more preferably 9.98 or below, and even more preferably 9.95 or below. The lower limit of the aforementioned SP value is not particularly limited, but in terms of difficulty in synthesis, the practical lower limit is around 8. Furthermore, the aforementioned SP value is referred to as the solubility parameter and is used as an indicator of polarity. In this specification, the SP value can be calculated using the Fedors method (RF Fedors, Polym. Eng. Sci., 14(2), 147-154(1974)). Also, regarding the SP value of acrylic copolymers, it can be calculated based on the SP value of each repeating unit in the copolymer, using their blending ratio (molar ratio).

[0071] The first adhesive layer mentioned above preferably contains a crosslinking agent. The crosslinking agent is not particularly limited and can be selected based on the type of crosslinking functional group in the base polymer contained in the first adhesive layer. Examples include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, and metal chelate-based crosslinking agents. More specifically, for example, when the crosslinking functional group in the base polymer contained in the first adhesive layer is a carboxyl group, the crosslinking agent can be, for example, an epoxy-based crosslinking agent, an isocyanate-based crosslinking agent, or a metal chelate-based crosslinking agent. In terms of easily adjusting the tensile strength, storage modulus G', gel fraction, etc. of the first adhesive layer to the following ranges, epoxy crosslinking agents and isocyanate crosslinking agents are preferred.

[0072] The content of the crosslinking agent is not particularly limited. By adjusting the amount of crosslinking functional groups in the base polymer contained in the first adhesive layer and the content of the crosslinking agent, the degree of crosslinking (gel fraction) of the first adhesive layer can be adjusted. Relative to 100 parts by weight of the base polymer contained in the first adhesive layer, the content of the crosslinking agent is preferably 0.01 parts by weight or more and 10 parts by weight or less. By keeping the content of the crosslinking agent within the above range, the base polymer contained in the first adhesive layer can be appropriately crosslinked, thereby improving the cohesive force of the first adhesive layer, further improving the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing, and further suppressing paste residue on the wafer components. The lower limit of the content of the crosslinking agent is more preferably 0.1 parts by weight, the upper limit is more preferably 5 parts by weight, and the lower limit is even more preferably 0.15 parts by weight, and the upper limit is even more preferably 3 parts by weight.

[0073] The first adhesive layer may further contain a tackifier (adhesive agent). The aforementioned tackifier can be either a solid or a liquid at room temperature. Furthermore, "room temperature" refers to 20-25°C, and "liquid" means having fluidity.

[0074] The above-mentioned tackifiers are not particularly limited; for example, rosin ester resins, terpene phenol resins, terpene resins, benzofuran resins, etc.

[0075] The content of the aforementioned tackifier is not particularly limited, but from the viewpoint of peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing, it is preferable that it is not included in the first adhesive layer. When the aforementioned tackifier is included, it is preferably 10 parts by weight or less relative to 100 parts by weight of the base polymer contained in the first adhesive layer. By keeping the content of the aforementioned tackifier within the aforementioned range, the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. A more preferred upper limit for the content of the aforementioned tackifier is 5 parts by weight.

[0076] The first adhesive layer may contain the same ultraviolet absorber as the ultraviolet absorber contained in the etched layer, without compromising the effects of the present invention. The ultraviolet absorption rate of the first adhesive layer may be the same as that of the etched layer, but is not particularly limited thereto.

[0077] The first adhesive layer may further contain inorganic fillers such as fumed silica. By incorporating the aforementioned inorganic filler, the cohesive force of the first adhesive layer can be improved, thereby further enhancing the peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing and further suppressing paste residue on the wafer components.

[0078] The first adhesive layer may further contain known additives such as plasticizers, resins, surfactants, waxes, and microparticle fillers. These additives may be used alone or in combination of two or more.

[0079] The tensile strength of the first adhesive layer is not particularly limited, but a preferred lower limit is 1 MPa. If the tensile strength is 1 MPa or higher, the first adhesive layer becomes less prone to tearing when the wafer component is peeled off by laser etching, further suppressing paste residue on the wafer component. A more preferred lower limit of the tensile strength is 1.3 MPa, and a more preferred lower limit is 1.4 MPa. There is no particular limit to the upper limit of the fracture strength mentioned above. However, if the fracture strength is too high, the peeling performance of the wafer parts of the adhesive tape used in semiconductor device manufacturing will be reduced. Therefore, the preferred upper limit is 10 MPa, the more preferred upper limit is 8 MPa, the more preferred upper limit is 7 MPa, and the more preferred upper limit is 6 MPa. Furthermore, regarding the tensile strength of the first adhesive layer, an Autograph (manufactured by Shimadzu Corporation) can be used, for example, to stretch the adhesive layer at a tensile speed of 500 mm / min under an environment of 23°C and 50% relative humidity, according to JIS K7161:2014, and the tensile strength of the first adhesive layer can be calculated based on the stress at fracture. Moreover, during the measurement, all layers of the substrate except the first adhesive layer must be removed, and a sample containing only the first adhesive layer should be prepared before measuring the tensile strength. As for the method of removing the substrate, there are no particular limitations as long as treatment with solvents, treatment involving chemical reactions, or treatment at high temperatures are avoided to prevent modification of the first adhesive layer. As a specific method, the following methods can be selected: after bonding the first adhesive layers together, peeling is performed by selecting an appropriate temperature and peeling speed, thereby peeling the substrate and the first adhesive layer and removing the substrate; or, the substrate is physically ground. Furthermore, when the thickness of the first adhesive layer is less than 100 μm, a test adhesive layer is formed by overlapping the first adhesive layer to achieve a thickness of 100 μm or more. The fracture strength of the obtained test adhesive layer is then measured as described above.

[0080] The storage modulus (shear storage modulus) G' of the first adhesive layer at 23°C and 1 Hz is not particularly limited, but the preferred lower limit is 1×10⁴ Pa and the preferred upper limit is 2×10⁶ Pa. If the storage modulus G' is 1×10⁴ Pa or higher, the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. If the storage modulus G' is 2×10⁶ Pa or lower, the retention performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. The more preferred lower limit of the storage modulus G' is 2×10⁴ Pa, the more preferred upper limit is 1.5×10⁶ Pa, and further preferably the lower limit is 3×10⁴ Pa, and further preferably the upper limit is 1.2×10⁶ Pa. Furthermore, regarding the storage elastic modulus G' of the first adhesive layer at 23°C and 1 Hz, it can be obtained, for example, by measuring the dynamic viscoelastic spectrum from -40 to 140°C under a simple heating mode with a heating rate of 5°C / min and 1 Hz using a viscoelastic spectrometer (manufactured by IT Measurement & Control Co., Ltd., Japan, DVA-200, or equivalent), in the form of the storage elastic modulus at 23°C. Furthermore, when the thickness of the first adhesive layer is less than 100 μm, a test adhesive layer is formed by overlapping the first adhesive layer to achieve a thickness of 100 μm or more. The storage modulus G' of the obtained test adhesive layer is then measured as described above.

[0081] The storage elastic modulus (shear storage elastic modulus) G' of the first adhesive layer at -20°C and 1 Hz is not particularly limited, but the preferred lower limit is 3 × 10⁵ Pa and the preferred upper limit is 1 × 10⁸ Pa. If the storage elastic modulus G' is 3 × 10⁵ Pa or higher, the peel performance of the wafer component of the adhesive tape for semiconductor device manufacturing is further improved. If the storage elastic modulus G' is 1 × 10⁸ Pa or lower, the retention performance of the wafer component of the adhesive tape for semiconductor device manufacturing is further improved. The more preferred lower limit of the storage elastic modulus G' is 5 × 10⁶ Pa, the more preferred upper limit is 5 × 10⁷ Pa, and further preferably the lower limit is 1 × 10⁷ Pa, and further preferably the upper limit is 3 × 10⁷ Pa.

[0082] The storage modulus (shear storage modulus) G' of the first adhesive layer at 140°C and 1 Hz is not particularly limited, but the preferred lower limit is 3 × 10⁴ Pa and the preferred upper limit is 3 × 10⁵ Pa. If the storage modulus G' is 3 × 10⁴ Pa or higher, the peel performance of the adhesive tape for semiconductor device manufacturing is further improved when transferring wafer parts with protrusions or smaller wafer parts. If the storage modulus G' is 3 × 10⁵ Pa or lower, the retention performance of the adhesive tape for semiconductor device manufacturing on wafer parts with protrusions or smaller wafer parts is further improved. The more preferred lower limit of the storage modulus G' is 5 × 10⁴ Pa, the more preferred upper limit is 2.5 × 10⁵ Pa, and further preferably the lower limit is 9 × 10⁴ Pa, and further preferably the upper limit is 2 × 10⁵ Pa.

[0083] Regarding the storage elastic moduli G' of the first adhesive layer at -20°C, 1 Hz, 140°C, and 1 Hz, for example, when measuring the dynamic viscoelastic spectrum from -40°C to 160°C under a simple heating mode with a heating rate of 5°C / min and 1 Hz using a viscoelastic spectrometer (manufactured by IT Measurement & Control Co., Ltd., Japan, DVA-200, or equivalent), the storage elastic moduli at -20°C and 140°C can be obtained. Furthermore, when the thickness of the first adhesive layer is less than 100 μm, a test adhesive layer is formed by overlapping the first adhesive layer to achieve a thickness of 100 μm or more. The storage modulus G' of the obtained test adhesive layer is then measured as described above.

[0084] The gel content of the first adhesive layer is not particularly limited, but a preferred lower limit is 70% by weight, and a preferred upper limit is 95% by weight. If the gel content is 70% by weight or more, the peel performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. If the gel content is 95% by weight or less, the retention performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. A more preferred lower limit of the gel content is 80% by weight, and a more preferred upper limit is 90% by weight. Furthermore, the gel fraction of the first adhesive layer can be determined by the following method. 0.1 g of the first adhesive layer (adhesive composition) was taken from the adhesive tape used in semiconductor device manufacturing and immersed in 50 mL of ethyl acetate. The mixture was then shaken for 24 hours at 23°C and 200 rpm. After shaking, the ethyl acetate was separated from the swollen adhesive composition by absorbing the ethyl acetate using a metal mesh (200 mesh). The separated adhesive composition was dried at 110°C for 1 hour. The weight of the dried adhesive composition, including the metal mesh, was measured, and the gel fraction of the first adhesive layer was calculated using the following formula. Gel fraction (weight %) = 100 × (W1 - W2) / W0 (W0: initial weight of adhesive composition, W1: weight of adhesive composition including metal mesh after drying, W2: initial weight of metal mesh) However, when the first adhesive component cannot be completely dissolved in ethyl acetate, solvents such as toluene, hexane, or water are used instead of ethyl acetate. Specifically, when the first adhesive component contains, for example, a styrene-based elastomer, toluene or hexane is used, and when it contains polyvinyl alcohol, hot water at 90°C is used.

[0085] There is no particular limitation on the method of adjusting the tensile strength, storage modulus G', gel fraction, etc. of the first adhesive layer to the above range. For example, the method of adjusting the composition or weight average molecular weight (Mw) of the base polymer contained in the first adhesive layer, the type or amount of the crosslinking agent, etc., can be cited as described above.

[0086] The phase separation structure of the first adhesive layer is not particularly limited, but it is preferably a spherical phase separation structure. By giving the first adhesive layer a spherical phase separation structure, the storage modulus of elasticity, tensile strength, gel fraction, etc., of the first adhesive layer can be easily adjusted to the aforementioned range, thereby further improving the peeling performance of the wafer component of the adhesive tape and further suppressing paste residue on the wafer component. The phase separation structure of the first adhesive layer can be controlled, for example, by adjusting the ratio of each block in the ABA-type block copolymer.

[0087] The first adhesive layer described above may also have a cylindrical phase-separated structure. By giving the first adhesive layer a cylindrical phase-separated structure, the storage modulus of elasticity, tensile strength, gel fraction, etc., of the first adhesive layer can be easily adjusted to the aforementioned range, thereby further improving the peel performance of the adhesive tape on the wafer part and further suppressing paste residue on the wafer part. Especially when the first adhesive layer has a cylindrical phase-separated structure, it is easy to adjust the storage modulus of elasticity, tensile strength, etc., of the first adhesive layer to a relatively large range, which further improves the peel performance of the adhesive tape on the wafer part when transferring wafer parts with protrusions or smaller wafer parts, and further suppresses paste residue on the wafer part. Furthermore, the phase separation structure of the adhesive layer can be confirmed by observation using a transmission electron microscope (TEM). The term "spherical" means that the microphase separation structure is a spherical structure, and the term "cylindrical" means that the microphase separation structure is a cylindrical structure.

[0088] When the first adhesive layer has a spherical phase separation structure, the size of the island structures within the spherical phase separation structure is not particularly limited. The preferred lower limit for the average major diameter of the island structures is 5 nm, the preferred upper limit is 100 nm, and the more preferred lower limit is 10 nm, with an even more preferred upper limit of 50 nm. By ensuring that the average major diameter is within the aforementioned range, the peeling performance of the adhesive tape on the wafer components is further improved, and paste residue on the wafer components can be further suppressed. Furthermore, the average major diameter of the island structure in the aforementioned spherical phase separation structure can be determined by the following method. The first adhesive layer was observed using a transmission electron microscope (TEM) at 5000x magnification, acquiring images of a 4.3 μm × 4.3 μm region. The acquired images were automatically binarized using image analysis software (e.g., Avizo, ver 2019.4, manufactured by Thermo Fisher Scientific). From the binarized images, the major axis of each island structure (dark area) was measured, and their arithmetic mean was used as the average major axis. Furthermore, details of the automatic binarization method are based on known literature ("Automatic Threshold Selection Method Based on Discriminant and Least Squares Criterion," Nobuyuki Otsu, Journal of the Institute of Electronics and Information Communications, Vol. J63-D, No. 4, pp. 349-356).

[0089] The thickness of the first adhesive layer is not particularly limited, but a preferred lower limit is 3 μm and a preferred upper limit is 50 μm. If the thickness of the first adhesive layer is 3 μm or more, the holding and peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing is further improved. If the thickness of the first adhesive layer is 50 μm or less, paste residue on the wafer components can be further suppressed. In terms of further improving the holding and peeling performance of the wafer components of the adhesive tape for semiconductor device manufacturing and further suppressing paste residue on the wafer components, the preferred lower limit of the thickness of the first adhesive layer is 5 μm, the preferred upper limit is 30 μm, and further preferably the lower limit is 8 μm, and further preferably the upper limit is 20 μm.

[0090] The adhesive tape for manufacturing semiconductor devices of the present invention may also have a second adhesive layer on the opposite side of the substrate on which the above-mentioned etch layer, the above-mentioned barrier layer, and the above-mentioned first adhesive layer are sequentially deposited. That is, the adhesive tape for manufacturing semiconductor devices of the present invention may further have a second adhesive layer, and the second adhesive layer, the substrate, the etched layer, the barrier layer, and the first adhesive layer are sequentially provided. If the second adhesive layer is provided, the adhesive tape for manufacturing semiconductor devices of the present invention can be easily attached to a glass support or the like.

[0091] Figure 4 shows a cross-sectional view, which schematically illustrates an example of the adhesive tape for manufacturing semiconductor devices of the present invention having the aforementioned second adhesive layer. In the adhesive tape 12 for manufacturing semiconductor devices of the present invention shown in Figure 4, the second adhesive layer 4b, the substrate 5, the etch layer 10, the barrier layer 11, and the first adhesive layer 4a are sequentially stacked.

[0092] The second adhesive layer is not particularly limited, but it is preferably a pressure-sensitive adhesive layer. Examples of base polymers contained in the second adhesive layer include ABA-type block copolymers, acrylic copolymers, amine copolymers, and polysiloxane adhesives. Among these, ABA-type block copolymers and acrylic copolymers are preferred from the viewpoint that they can be firmly adhered to supports such as glass substrates and can be peeled off without adhesive residue.

[0093] Regarding the ABA-type block copolymer that forms the base polymer contained in the second adhesive layer, the same polymer as the ABA-type block copolymer used in the first adhesive layer described above can be used. There are no particular limitations on the phase separation structure of the second adhesive layer mentioned above. However, from the perspective of easily balancing strong adhesion and re-peelability, a spherical phase separation structure is preferable. In the above-mentioned ABA-type block copolymer, block B is not particularly limited as long as it has a flexible structure. Block B is preferably composed of a structure derived from (meth)acrylic acid monomers, and more preferably contains butyl acrylate and 2-ethylhexyl acrylate.

[0094] Regarding the acrylic copolymer used as the base polymer in the second adhesive layer, the same polymer as the acrylic copolymer used in the first adhesive layer described above can be used. The acrylic copolymer contained in the second adhesive layer is a copolymer having a structure derived from (meth)acrylic monomers. As for the aforementioned (meth)acrylic monomers, examples include monomers that are the same as those used in the ABA-type block copolymers described above. Among these, butyl acrylate and 2-ethylhexyl acrylate are preferred from the viewpoint of easily balancing strong adhesion and re-peelability.

[0095] From the viewpoint of performing re-peeling without paste residue, the aforementioned acrylic copolymer is preferably a structure containing monomers derived from crosslinking functional groups. As a monomer with crosslinking functional groups, examples of monomers with crosslinking functional groups that are the same as those in the ABA-type block copolymers described above can be cited.

[0096] In the aforementioned acrylic copolymer, the content of the monomer structure derived from the crosslinking functional group is not particularly limited, but is preferably 0.1% by weight or more and 30% by weight or less. By keeping the content of the monomer structure derived from the crosslinking functional group within the aforementioned range, both strong adhesion and re-peelability can be achieved. The more preferably lower limit of the content of the monomer structure derived from the crosslinking functional group is 0.5% by weight, further preferably the lower limit is 1% by weight, more preferably the upper limit is 25% by weight, and further preferably the upper limit is 20% by weight.

[0097] The weight-average molecular weight (Mw) of the aforementioned acrylic copolymer is not particularly limited, but is preferably above 200,000 and below 2,000,000. By keeping the weight-average molecular weight within this range, both strong adhesion and re-peelability can be achieved. The preferred lower limit of the aforementioned weight-average molecular weight is 400,000, and the preferred upper limit is 1,500,000.

[0098] The second adhesive layer mentioned above preferably contains a crosslinking agent. The crosslinking agent is not particularly limited, but is selected based on the type of crosslinking functional group in the base polymer contained in the second adhesive layer. Examples include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, and metal chelate-based crosslinking agents. More specifically, for example, when the crosslinking functional group in the base polymer contained in the second adhesive layer is a carboxyl group, the crosslinking agent may include epoxy-based crosslinking agents, isocyanate-based crosslinking agents, and metal chelate-based crosslinking agents. From the perspective of balancing strong adhesion and re-peelability, epoxy-based crosslinking agents and isocyanate-based crosslinking agents are preferred.

[0099] The content of the crosslinking agent is not particularly limited. By adjusting the amount of crosslinking functional groups in the base polymer contained in the second adhesive layer and the content of the crosslinking agent, the degree of crosslinking (gel fraction) of the second adhesive layer can be adjusted. Relative to 100 parts by weight of the base polymer contained in the second adhesive layer, the content of the crosslinking agent is preferably 0.01 parts by weight or more and 10 parts by weight or less. By keeping the content of the crosslinking agent within the above range, both strong adhesion and re-peelability can be achieved. The lower limit of the content of the crosslinking agent is 0.1 parts by weight, the upper limit is preferably 5 parts by weight, the lower limit is even more preferably 0.15 parts by weight, and the upper limit is even more preferably 3 parts by weight.

[0100] The second adhesive layer may further contain a tackifier (adhesive agent). The aforementioned tackifier is not particularly limited, but it preferably has a moderate ultraviolet transmittance. The ultraviolet transmittance of the aforementioned tackifier is not particularly limited, but the preferred lower limit for ultraviolet transmittance at a wavelength of 365 nm is 1%, a more preferred lower limit is 50%, and a further preferred lower limit is 80%. The upper limit for ultraviolet transmittance at a wavelength of 365 nm is not particularly limited, but the practical upper limit is approximately 95%. From the viewpoint of higher ultraviolet transmittance, hydrogenated tackifiers are preferred.

[0101] The aforementioned tackifiers are not particularly limited, and examples include rosin ester resins, terpene phenol resins, terpene resins, and benzofuran resins. Among these, hydrogenated rosin esters, hydrogenated terpene phenols, and hydrogenated terpene resins are preferred.

[0102] The content of the aforementioned tackifier is not particularly limited, but from the viewpoint of re-peelability, it is preferable that it is not present in the second adhesive layer. When the aforementioned tackifier is present, it is preferably 10 parts by weight or less relative to 100 parts by weight of the base polymer contained in the second adhesive layer. If the content of the aforementioned tackifier, which is solid at room temperature, is within the aforementioned range, paste residue is less likely to form during re-peeling. A more preferred lower limit for the content of the aforementioned tackifier is 5 parts by weight, and a more preferred upper limit is 3 parts by weight.

[0103] The second adhesive layer described above preferably has a moderate ultraviolet transmittance. The ultraviolet transmittance is not particularly limited, but the preferred lower limit for ultraviolet transmittance at a wavelength of 365 nm is 1%, a more preferred lower limit is 50%, and a further preferred lower limit is 80%. The upper limit for ultraviolet transmittance at a wavelength of 365 nm is not particularly limited, but the practical upper limit is approximately 95%.

[0104] The second adhesive layer may further contain inorganic fillers such as fumigated silicon dioxide. By incorporating the aforementioned inorganic fillers, the cohesive force of the second adhesive is improved, making it easier to balance strong adhesion and re-peelability.

[0105] The aforementioned second adhesive layer may further contain known additives such as plasticizers, resins, surfactants, waxes, and microparticle fillers. These additives may be used alone or in combination of two or more.

[0106] The adhesive strength of the second adhesive layer is not particularly limited, but a preferred lower limit is 0.8 N / 25 mm. If the adhesive strength is 0.8 N / 25 mm or higher, it can prevent peeling off from the support such as the glass substrate during wafer component removal. A more preferred lower limit of the adhesive strength is 2 N / 25 mm, further preferably 6 N / 25 mm, and even more preferably 12 N / 25 mm. There is no particular limit to the upper limit of the aforementioned adhesive force. From the point of view of re-peelability, the preferred upper limit is 20 N / 25 mm, the more preferred upper limit is 18 N / 25 mm, and the even more preferred upper limit is 16 N / 25 mm. Furthermore, the adhesion of the second adhesive layer can be obtained, for example, by using an Autograph (manufactured by Shimadzu Corporation) and other instruments, according to JIS Z0237:2009, cutting the adhesive tape to a width of 25 mm, applying it to a glass plate at a speed of 300 mm / min using a 2 kg pressing rubber roller at a room temperature of 23°C and a relative humidity of 50%, leaving it for 30 minutes, peeling the adhesive tape off at a speed of 300 mm / min, and measuring the 180° peel strength.

[0107] The gel content of the second adhesive layer is not particularly limited, but a preferred lower limit is 30% by weight, and a preferred upper limit is 90% by weight. If the gel content is 30% by weight or more, paste residue is less likely to form during re-peeling. If the gel content is 90% by weight or less, it is easier to adjust the adhesion to a higher level. A more preferred lower limit of the gel content is 40% by weight, and a more preferred upper limit is 80% by weight. Furthermore, the gel fraction of the second adhesive layer can be determined by the following method. 0.1 g of the second adhesive layer (adhesive composition) was extracted from the adhesive tape used in semiconductor device manufacturing and immersed in 50 mL of ethyl acetate. The mixture was then shaken for 24 hours at 23°C and 200 rpm. After shaking, the ethyl acetate was separated from the swollen adhesive composition by absorbing ethyl acetate using a metal mesh (200 mesh). The separated adhesive composition was dried at 110°C for 1 hour. The weight of the dried adhesive composition, including the metal mesh, was measured, and the gel fraction of the second adhesive layer was calculated using the following formula. Gel fraction (weight %) = 100 × (W1 - W2) / W0 (W0: initial weight of adhesive composition, W1: weight of adhesive composition including metal mesh after drying, W2: initial weight of metal mesh) However, when the second adhesive component cannot be completely dissolved in ethyl acetate, solvents such as toluene, hexane, or water are used instead of ethyl acetate. Specifically, when the second adhesive component contains, for example, a styrene-based elastomer, toluene or hexane is used; when it contains polyvinyl alcohol, hot water at 90°C is used.

[0108] There are no particular limitations on the method of adjusting the adhesion, gel fraction, etc. of the second adhesive layer to the above range. For example, the method of adjusting the composition or weight average molecular weight (Mw) of the base polymer contained in the second adhesive layer, the type or amount of the crosslinking agent, etc., can be cited as described above.

[0109] The thickness of the second adhesive layer is not particularly limited, but a preferred lower limit is 3 μm and a preferred upper limit is 30 μm. If the thickness of the second adhesive layer is 3 μm or more, it can prevent peeling off from the support such as the glass substrate during wafer component removal. If the thickness of the second adhesive layer is 30 μm or less, re-peeling can be easily performed. A more preferred lower limit of the thickness of the second adhesive layer is 5 μm, a more preferred upper limit is 20 μm, and a further preferred lower limit is 8 μm, and a further preferred upper limit is 12 μm.

[0110] The adhesive tape for manufacturing semiconductor devices according to the present invention only needs to have the substrate, etched layer, barrier layer, and first adhesive layer as described above in sequence, and other layers may be added without compromising the effects of the present invention. When the barrier layer has an easily bondable resin layer on the surface in contact with the first adhesive layer, it only needs to have the substrate, etched layer, barrier layer (with an easily bondable resin layer on the surface in contact with the first adhesive layer), and first adhesive layer as described above in sequence, and other layers may be added without compromising the effects of the present invention. When a second adhesive layer is included, it only needs to have the second adhesive layer, substrate, etched layer, barrier layer, and first adhesive layer as described above in sequence, and other layers may be added without compromising the effects of the present invention.

[0111] The ball adhesion of the first adhesive layer of the adhesive tape for semiconductor device manufacturing of the present invention is not particularly limited, but is preferably No. 5 or higher. If the ball adhesion is No. 5 or higher, the holding performance of the wafer component of the adhesive tape for semiconductor device manufacturing is further improved. The ball adhesion is more preferably No. 6 or higher. The upper limit of the ball adhesion is not particularly limited, but from the viewpoint of further improving the peeling performance of the wafer component, it is preferably No. 12 or lower. Furthermore, regarding the ball adhesion of adhesive tape used in semiconductor device manufacturing, for example, a ball adhesion tester (manufactured by Yasuda Seiki Co., Ltd.) can be used to measure and calculate the adhesion in an environment of 23°C and 50% relative humidity, in accordance with JIS Z0237.

[0112] The surface peel strength of the first adhesive layer of the adhesive tape for semiconductor device manufacturing of the present invention is not particularly limited, but a preferred upper limit is 1 MPa. If the surface peel strength is 1 MPa or less, the peel performance of the wafer component of the adhesive tape for semiconductor device manufacturing is further improved. A more preferred upper limit of the surface peel strength is 0.8 MPa. The lower limit of the surface peel strength is not particularly limited, but from the viewpoint of further improving the retention performance of the wafer component, a preferred lower limit is 0.65 MPa. Furthermore, the surface peel force of the first adhesive layer of the adhesive tape for semiconductor device manufacturing can be determined, for example, by the following method: A 10 mm thick SUS cube is bonded to the surface of the first adhesive layer of the adhesive tape for semiconductor device manufacturing, and pressed at 0.3 MPa for 10 seconds at a temperature of 23°C and a relative humidity of 50%. Then, using an Autograph (manufactured by Shimadzu Corporation), the SUS cube is stretched at a tensile speed of 1000 mm / min while the substrate surface of the adhesive tape for semiconductor device manufacturing is fixed at a temperature of 23°C and a relative humidity of 50%, and then peeled off. The maximum stress during peeling is taken as the surface peel force.

[0113] The visible light transmittance of the adhesive tape for semiconductor device manufacturing of the present invention is not particularly limited, but from the viewpoint of removing wafer components by laser etching, a moderate visible light transmittance is preferred. The preferred lower limit of the visible light transmittance is 50%, and the more preferred lower limit is 80%. The upper limit of the visible light transmittance is not particularly limited, but the practical upper limit is about 95%. The haze of the adhesive tape used in semiconductor device manufacturing of the present invention is not particularly limited, but from the viewpoint of peeling off wafer components by laser etching, a lower haze is preferable. The upper limit of the above-mentioned haze is preferably 10%, more preferably 5%, and even more preferably 3%. The lower limit of the above-mentioned haze is not particularly limited, but the lower the better, and practically the lower limit is about 0.1%. Furthermore, the visible light transmittance and haze of adhesive tape used in semiconductor device manufacturing can be measured using a haze meter (manufactured by Nippon Denshoku Kogyo Co., Ltd., NDH4000).

[0114] The application of the adhesive tape for semiconductor device manufacturing of the present invention is not particularly limited, and it is suitable for manufacturing semiconductor devices that involve laser irradiation. The adhesive tape for semiconductor device manufacturing of the present invention exhibits excellent wafer component removal performance and can suppress paste residue on the wafer components, thus it is suitable for the step shown in FIG3, in which wafer components disposed on the first adhesive layer are removed by laser etching. The aforementioned chip components are not particularly limited; for example, MiniLED chips, micro LED chips, and optical chips for image sensors can be cited, with micro LED chips being particularly preferred.

[0115] The method for transferring wafer components using the adhesive tape for semiconductor device manufacturing of the present invention is not particularly limited. For example, a wafer component transfer method including the following steps can be exemplified: placing the wafer component on the first adhesive layer of the adhesive tape for semiconductor device manufacturing of the present invention; and irradiating it with laser light to peel off the wafer component. Furthermore, the method for manufacturing electronic components using the adhesive tape for semiconductor device manufacturing of the present invention is also not particularly limited. For example, a method for manufacturing electronic components including the wafer component transfer method described above can be exemplified. According to these methods, wafer components can be transferred with better yield, and paste residue on the wafer components can be suppressed. [Effects of the Invention]

[0116] According to the present invention, an adhesive tape for manufacturing semiconductor devices can be provided, which has excellent peeling performance of wafer components and can suppress paste residue on wafer components. Simple Explanation of the Diagram

[0117] [Figure 1] is a cross-sectional view schematically illustrating one example of the steps of peeling off a wafer component disposed on an adhesive layer by laser ablation using a conventional adhesive tape. [Figure 2] is a schematic cross-sectional view showing an example of the adhesive tape for manufacturing semiconductor devices according to the present invention. [Figure 3] is a cross-sectional view schematically illustrating one example of a step in which a wafer component disposed on a first adhesive layer is peeled off by laser etching using the adhesive tape for manufacturing semiconductor devices according to the present invention. [Figure 4] is a schematic cross-sectional view of an example of the adhesive tape for manufacturing semiconductor devices of the present invention having a second adhesive layer. Implementation

[0118] The present invention will be described in more detail below with examples, but the present invention is not limited to these examples.

[0119] (Adhesive A) (1) Preparation of acrylic copolymer (1) 52 parts by weight of ethyl acetate were added to a reactor equipped with a thermometer, stirrer, and condenser. After nitrogen purging, the reactor was heated to initiate reflux. After the ethyl acetate boiled, 0.08 parts by weight of azobisisobutyronitrile (AIB) was added as a polymerization initiator 30 minutes later. A monomer mixture consisting of 98 parts by weight of butyl acrylate (BA) and 2 parts by weight of acrylic acid (AAc) was added dropwise uniformly and slowly over a period of 1 hour and 30 minutes, and the mixture was allowed to react. 30 minutes after the addition was completed, 0.1 parts by weight of AIB was added, and the polymerization reaction was carried out for 5 hours. Ethyl acetate was added to the reactor for dilution and cooling was performed simultaneously to obtain a solution of acrylic copolymer (1) with a solid content of 30% by weight. The weight-average molecular weight of the obtained acrylic copolymer (1) was determined by GPC. Furthermore, the determination was performed using a Waters 2690 Separations Module as the measuring instrument, a Showa Denko G. KF-806L column as the column, ethyl acetate as the solvent, and the sample flow rate was 1 mL / min and the column temperature was 40°C. Furthermore, for the obtained acrylic copolymer (1), the SP value of the polymer as a whole was calculated by the Fedors method.

[0120] (2) Preparation of adhesive solution The obtained acrylic copolymer (1) was dissolved in ethyl acetate to a solid content of 15% by weight. 3.6 parts by weight of Coronate L (manufactured by Tosoh Corporation) as an isocyanate-based crosslinking agent and 8 parts by weight of Tinuvin 928 (manufactured by BASF Japan Corporation, a benzotriazole-based ultraviolet absorber) as an ultraviolet absorber were added relative to 100 parts by weight of the acrylic copolymer (1), and the mixture was further stirred thoroughly to obtain an adhesive solution of adhesive A.

[0121] (Adhesive B) (1) Preparation of ABA-type block copolymer (1) 500 parts by weight of degassed and dehydrated cyclohexane, 0.13 parts by weight of n-butyllithium (n-BuLi), and tetrahydrofuran (THF) were added to an autoclave at a molar ratio of n-BuLi / THF = 40. Then, 4.5 parts by weight of styrene monomer were added and polymerization was carried out at 40°C to obtain copolymer (block A). After the polymerization conversion of styrene monomer reached approximately 100%, 91 parts by weight of 1,3-butadiene monomer were added and polymerization was carried out to obtain AB-type block copolymer. After the polymerization conversion reached approximately 100%, 4.5 parts by weight of styrene monomer were added again and polymerization was carried out at 40°C until the polymerization conversion reached approximately 100%, to obtain ABA-type block copolymer (before hydrogenation). The ABA-type block copolymer was diluted with purified and dried cyclohexane to a polymer concentration of 5% by weight before being subjected to hydrogenation. During hydrogenation, the reaction was initiated with stirring at a hydrogen supply pressure of 0.7 MPa-gauge and a reaction temperature of 80°C. At the point when hydrogen absorption ceased, the reaction solution was restored to room temperature and pressure and extracted from the reaction vessel to obtain the ABA-type block copolymer (1). The weight-average molecular weight of the obtained ABA-type block copolymer (1) was determined by GPC. Furthermore, the determination was performed using a Waters 2690 Separations Module as the instrument, a Showa Denko G.K.K.K.K.K.L. GPC KF-806L as the column, ethyl acetate as the solvent, and the sample flow rate was 1 mL / min and the column temperature was 40°C. Furthermore, for the obtained ABA-type block copolymer (1), a differential scanning calorimeter (Hitachi High-Tech Science, SII Exstar 6000 / DSC6220) was used to measure the glass transition temperature of block B under nitrogen atmosphere and heating rate of 10℃ / min. The value obtained in the second run was used to determine the glass transition temperature of block B. In addition, peaks originating from block A and block B were obtained, but the peak on the low-temperature side was taken as the peak originating from block B to determine the glass transition temperature of block B. Furthermore, for the obtained ABA-type block copolymer (1), the ratio of ethylene to butene was calculated from the peak area ratio of ethylene to butene components determined by 1H-NMR, and the SP values ​​of the polymer as a whole and block B were calculated by Fedors method.

[0122] (2) Preparation of adhesive solution The obtained ABA-type block copolymer (1) was dissolved in toluene with a solid content of 20% by weight. For every 100 parts by weight of the ABA-type block copolymer (1), 8 parts by weight of Tinuvin 928 (manufactured by BASF Japan, a benzotriazole-based UV absorber) was added and the mixture was stirred thoroughly to obtain an adhesive solution of adhesive B. (3) Confirmation of phase separation structure Using the same method as in the examples and comparative examples described below, only the adhesive layer was prepared. The small pieces obtained after trimming the adhesive layer were stained in a 2% osmium tetroxide aqueous solution at 60°C for 12 hours, and then washed. Using a cryostat (LEICA, ULTRACUT FC7), the small pieces were cut along the thickness direction of the adhesive layer at a temperature of -100°C, producing sections less than 100 nm thick. The cut sections were placed on a mesh with a support film to prepare the test samples. The obtained test samples were observed at 5000x magnification using a transmission electron microscope (JEOL, JEM-2100) to confirm the phase-separated structure, which was found to be a spherical phase-separated structure.

[0123] (Adhesive C) (1) Preparation of ABA-type block copolymer (2) 0.902 g of 1,6-hexanedithiol, 1.83 g of carbon disulfide, and 11 mL of dimethylformamide were added to a two-necked flask and stirred at 25°C. Triethylamine (2.49 g) was added dropwise over 15 minutes, and the mixture was stirred at 25°C for 3 hours. Then, methyl α-bromophenylacetate (2.75 g) was added dropwise over 15 minutes, and the mixture was stirred at 25°C for 4 hours. Next, 100 mL of extraction solvent (n-hexane:ethyl acetate = 50:50) and 50 mL of water were added to the reaction mixture, and the mixture was subjected to separation extraction. The organic layers obtained from the first and second separation extractions were mixed and washed sequentially with 50 mL of 1M hydrochloric acid, 50 mL of water, and 50 mL of saturated saline solution. Sodium sulfate was added to the washed organic layer, and the mixture was dried. The sodium sulfate was filtered off, and the filtrate was concentrated using an evaporator to remove the organic solvent. The obtained concentrate was purified by silicone column chromatography to obtain the RAFT agent.

[0124] 15 parts by weight of styrene (St), 2 parts by weight of acrylic acid (AAc), 1.9 parts by weight of RAFT agent, and 2,2'-azo (2-methylbutyronitrile) (ABN-E) were added to a two-necked flask. The flask was purged with nitrogen while the temperature was raised to 85°C. The polymerization reaction (first stage reaction) was then carried out by stirring at 85°C for 6 hours. After the reaction was completed, 4000 parts by weight of n-hexane were added to the flask, and the mixture was stirred to precipitate the reactants. The unreacted monomers and RAFT agent were filtered out, and the reactants were dried under reduced pressure at 70°C to obtain the copolymer (block A).

[0125] A mixture comprising 81 parts by weight of butyl acrylate (BA), 2 parts by weight of acrylic acid (AAc), 0.058 parts by weight of ABN-E, and 50 parts by weight of ethyl acetate, along with the copolymer (block A) obtained above, was added to a two-necked flask. The flask was purged with nitrogen while the temperature was simultaneously raised to 85°C. The mixture was then stirred at 85°C for 6 hours to carry out a polymerization reaction (second-stage reaction), thereby obtaining a reaction solution containing a block copolymer formed from block A and block B. A portion of the reaction solution was collected, and 4000 parts by weight of n-hexane were added to it. After stirring to precipitate the reactants, the unreacted monomers and solvents were filtered out, and the reactants were dried under reduced pressure at 70°C to obtain ABA-type block copolymers (2). The weight-average molecular weight of the obtained ABA-type block copolymer (2) was determined by GPC. Furthermore, the determination was performed using a Waters 2690 Separations Module as the measuring instrument, a Showa Denko G.K.K.K.K.K.K.L. GPC KF-806L as the column, ethyl acetate as the solvent, and the sample flow rate was 1 mL / min and the column temperature was 40°C. Furthermore, for the obtained ABA-type block copolymer (2), a differential scanning calorimeter (Hitachi High-Tech Science, SII Exstar 6000 / DSC6220) was used to measure the glass transition temperature of block B under nitrogen atmosphere and heating rate of 10℃ / min. The value obtained in the second run was used to determine the glass transition temperature of block B. In addition, peaks originating from block A and block B were obtained, but the peak on the low-temperature side was taken as the peak originating from block B to determine the glass transition temperature of block B. Furthermore, for the obtained ABA-type block copolymer (2), the SP values ​​of the polymer as a whole and block B were calculated by the Fedors method.

[0126] (2) Preparation of adhesive solution The obtained ABA-type block copolymer (2) was dissolved in ethyl acetate with a solid content of 15% by weight. One part by weight of Tetrad C (manufactured by Mitsubishi Chemical Corporation) as an epoxy crosslinking agent and eight parts by weight of Tinuvin 928 (manufactured by BASF Japan Corporation, a benzotriazole UV absorber) as a UV absorber were added to 100 parts by weight of the ABA-type block copolymer (2), and the mixture was stirred thoroughly to obtain an adhesive solution of adhesive C. (3) Confirmation of phase separation structure Using the same method as in the examples and comparative examples described below, only the adhesive layer was prepared. The small pieces obtained after trimming the adhesive layer were stained in a 2% osmium tetroxide aqueous solution at 60°C for 12 hours, and then washed. Using a cryostat (LEICA, ULTRACUT FC7), the small pieces were cut along the thickness direction of the adhesive layer at a temperature of -100°C, producing sections less than 100 nm thick. The cut sections were placed on a mesh with a support film to prepare the test samples. The obtained test samples were observed at 5000x magnification using a transmission electron microscope (JEOL, JEM-2100) to confirm the phase-separated structure, which was found to be a spherical phase-separated structure.

[0127] (Adhesives D~E, J~O, and R) The composition of the ABA-type block copolymer, the type or amount of ultraviolet absorber, and the type or amount of crosslinking agent were changed as shown in Tables 1 and 2. Otherwise, the adhesive solution was obtained in the same manner as adhesive C.

[0128] (Adhesives F~I, P, and Q) The composition of the acrylic copolymer, the type or amount of the ultraviolet absorber, and the type or amount of the crosslinking agent were changed as shown in Tables 1 and 2. Otherwise, the adhesive solution was obtained in the same manner as adhesive A. Furthermore, Tinuvin 460 (manufactured by BASF Japan, hydroxyphenyl triglyceride) was used in adhesive H. It is a UV absorber.

[0129] The letters in the table are the abbreviations for the following terms. Styrene AAc: Acrylic acid BA: Butyl acrylate 2-EHA: 2-Ethylhexyl acrylate LA: Lauryl acrylate MA: Methyl acrylate MOEA: Methoxyethyl acrylate 2-HEA: 2-Hydroxyethyl acrylate

[0130] [Table 1] adhesive A B C D E F G H I Basic polymers type Acrylic copolymer (1) ABA-type block copolymer (1) ABA-type block copolymer (2) ABA-type block copolymers (3) ABA-type block copolymers (4) Acrylic copolymer (1) Acrylic copolymer (1) Acrylic copolymer (1) Acrylic copolymer (2) Segment A Aromatic vinyl monomers (parts by weight) St - 9 15 15 15 - - - - Monomers containing cross-linking functional groups (parts by weight) AAc - - 2 2 2 - - - - HEA - - - - - - - - - Segment B (Meth)acrylic monomers (parts by weight) BA 98 - 81 20 40 98 98 98 - 2-EHA - - - 61 - - - - 50 LA - - - - 41 - - - 49.6 MA - - - - - - - - - MOEA - - - - - - - - - Monomer with crosslinkable functional group (parts by weight) AAc 2 - 2 2 - 2 2 2 0.3 HEA - - - - 2 - - - 0.1 Conjugated diene monomer (parts by weight) 1,3 - butadiene - 91 (after hydrogenation, ethylene:butene = 40:51) - - - - - - - Mw [ten thousand] 80 23 25 31 29 80 80 80 50 Glass transition temperature of block B [℃] - -50 -52 -64 -38 - - - - SP value of the whole polymer 9.84 8.5 9.92 9.57 9.66 9.84 9.84 9.84 9.2 SP value of segment B - 8.4 9.85 9.44 9.55 - - - - Ultraviolet absorber (parts by weight) Tinuvin928 (benzotriazole series) 8 8 8 8 8 0.5 20 - 8 Tinuvin460 (hydroxyphenyl triglyceride) Tie) - - - - - - - 8 - Crosslinking agent (parts by weight) Coronate L 3.6 - - - 1 3.6 3.6 - 3 Tetrad C - - 1 1 - - - 0.05 - Phase separation structure - sphere sphere sphere sphere - - - -

[0131] [Table 2] adhesive J K L M N O P Q R Basic polymers type ABA-type block copolymers (4) ABA-type block copolymers (5) ABA-type block copolymers (6) ABA-type block copolymers (7) ABA-type block copolymers (8) ABA-type block copolymers (9) Acrylic copolymer (1) Acrylic copolymer (3) ABA-type block copolymer (10) Segment A Aromatic vinyl monomers (parts by weight) St 15 28 twenty two 15 15 15 - - 15 Monomers containing cross-linking functional groups (parts by weight) AAc 2 4 3 2 2 2 - - 1.8 HEA - - - - - - - - 0.2 Segment B (Meth)acrylic monomers (parts by weight) BA 40 66 73 40 - 20 98 39 81 2-EHA - - - - - - - 55 - LA 41 - - - 41 41 - - - MA - - - 41 - - - 3 - MOEA - - - - 40 20 - - - Monomer with crosslinkable functional group (parts by weight) AAc 2 2 2 2 2 2 2 2 2 HEA - - - - - - - - - Conjugated diene monomer (parts by weight) 1,3-Butadiene - - - - - - - - - Mw [ten thousand] 29 10 15 S 25 43 37 80 90 25 Glass transition temperature of block B [°C] -38 -52 -53 -25 -35 -36 - - -52 SP value of the polymer as a whole 9.65 9.99 9.95 10.22 9.78 9.71 9.84 9.55 9.92 SP value of segment B 9.53 9.87 9.86 10.23 9.69 9.61 - - 9.85 Ultraviolet absorber (parts by weight) Tinuvin928 (benzotriazole series) 8 8 8 8 8 8 - - - Tinuvin460 (hydroxyphenyl triglyceride) Tie) - - - - - - - - - Crosslinking agent (parts by weight) Coronate L - - - - - - 3.6 2.1 2.9 Tetrad C 0.75 0.75 0.75 0.75 0.75 0.75 - - - Phase separation structure sphere cylinder cylinder sphere sphere sphere - - sphere

[0132] (Example 1) (1) Manufacturing of adhesive tape Using a dressing apparatus, the obtained adhesive solution of adhesive A was applied to a 50 μm thick polyethylene terephthalate (PET) film with a haze of 3.8% that had undergone corona treatment, with a dry film thickness of 16 μm. The film was then dried at 110°C for 3 minutes to form an etched layer. This was designated as laminated film (a). Subsequently, the etched layer side of laminated film (a) was overlapped with a 4 μm thick corona-treated PET film serving as a barrier layer. This was designated as laminated film (b). On the other hand, using a dressing applicator, the obtained adhesive solution of adhesive A is applied to the release treatment surface of a 75 μm release PET film with a dry film thickness of 10 μm. The film is then dried at 110°C for 3 minutes to form an adhesive layer. This adhesive layer is then bonded to the barrier layer side of the laminated film (b). Finally, it is heat-cured at 40°C for 48 hours to obtain an adhesive tape sequentially comprising a substrate, an etched layer, a barrier layer, a first adhesive layer, and a release PET film.

[0133] (2) Determination of the tensile strength of the first adhesive layer In addition, a sheet with a thickness of 500 μm consisting only of the first adhesive layer was manufactured. For this adhesive layer, the tensile strength was calculated from the stress at fracture using Autograph (manufactured by Shimadzu Corporation) according to JIS K7161 when it was stretched at a tensile speed of 500 mm / min in an environment with a temperature of 23°C and a relative humidity of 50%.

[0134] (3) Determination of gel fraction of the first adhesive layer and the etched layer 0.1 g of the first adhesive layer (adhesive composition) and 0.1 g of the etched layer (etched layer composition) were taken from the self-adhesive tape and immersed in 50 mL of ethyl acetate respectively. The mixtures were shaken for 24 hours at 23°C and 200 rpm. After shaking, the ethyl acetate and the swollen composition absorbed by the ethyl acetate were separated using a metal mesh (200 mesh). The separated compositions were dried at 110°C for 1 hour. The weight of the dried composition, including the metal mesh, was measured, and the gel fraction of the first adhesive layer and the etched layer was calculated using the following formula. Gel fraction (weight %) = 100 × (W1 - W2) / W0 (W0: initial weight of the composition, W1: weight of the composition including the metal mesh after drying, W2: initial weight of the metal mesh) However, regarding the etched layer of Example 3 and the first adhesive layer of Example 4, toluene was used instead of ethyl acetate to determine the gel fraction.

[0135] (4) Determination of the storage elastic modulus (shear storage elastic modulus) G' of the etched layer at 23℃ and 1 Hz and the storage elastic modulus (shear storage elastic modulus) G' of the first adhesive layer at -20℃ / 23℃ / 140℃ and 1 Hz. In addition, a sheet with a thickness of 1 mm consisting only of an etched layer or a first adhesive layer was fabricated. Regarding the etched layer and the first adhesive layer, the dynamic viscoelastic spectra from -40 to 160°C were measured using a DVA-200 viscoelastic spectrometer (manufactured by IT Measurement & Control Co., Ltd., Japan) at a heating rate of 5°C / min and 1 Hz in a simple heating mode. The storage elastic modulus G' at -20°C, 23°C, and 140°C was then determined.

[0136] (5) Determination of ultraviolet absorption rate of the etched layer and the first adhesive layer The ultraviolet absorption rates of the etched layer and the first adhesive layer at a wavelength of 365 nm were measured using a spectrophotometer (Shimadzu Corporation, UV-2600i) according to JIS L1925.

[0137] (6) Determination of the viscosity of the ball in the adhesive band Regarding the adhesive tape, the ball adhesion of the adhesive tape was measured using a ball adhesion tester (manufactured by Yasuda Seiki Co., Ltd.) in accordance with JIS Z0237 at an environment of 23°C and 50% relative humidity.

[0138] (7) Peel strength of the first adhesive layer of the adhesive tape Regarding the adhesive tape, one side of a SUS cube with a diameter of 10 mm was adhered to the surface of the first adhesive layer of the adhesive tape, and pressed for 10 seconds at 0.3 MPa under conditions of 23°C and 50% relative humidity. Then, using Autograph (manufactured by Shimadzu Corporation), under conditions of 23°C and 50% relative humidity, the SUS cube was stretched at a tensile speed of 1000 mm / min and peeled off while the substrate surface of the adhesive tape was fixed. The maximum stress during peeling was measured as the surface peel force.

[0139] (Examples 2-18, 22-24, Comparative Examples 1-4) Except for the changes to each layer as shown in Tables 3, 4, and 5, the adhesive tape was obtained in the same manner as in Example 1. Furthermore, in Examples 15-18 and 22-24, a PET film with a thickness of 50 μm and a haze of 0.3% was used as the substrate, and a PET film with a thickness of 5.5 μm and an attached easy-bonding resin layer (the elastic modulus of the easy-bonding resin layer obtained by nano-indentation method was 5850 MPa) was used as the barrier layer.

[0140] (Example 19) (1) Manufacturing of double-sided adhesive tape Using a dressing apparatus, the adhesive solution of the obtained adhesive P is applied to a polyethylene terephthalate film with one side having undergone release treatment, so that the thickness of the dried film is 10 μm. The film is then dried at 110°C for 3 minutes to produce a laminated film (p) with an adhesive layer on the release-treated side of the polyethylene terephthalate film. Secondly, except for modifying each layer as shown in Table 4, the adhesive tape is manufactured in the same manner as in Example 1. On the opposite side of the substrate of the obtained adhesive tape, which sequentially has an etched layer, a barrier layer, a first adhesive layer, and a release PET film, the laminated film (p) is laminated from the adhesive layer, thereby transferring and integrally laminating the adhesive layer onto the substrate. In this way, a double-sided adhesive tape with a second adhesive layer having the thickness and gel fraction shown in Table 4 is obtained. Using the same method as in Example 1, the tensile strength of the first adhesive layer, the gel fraction of the first adhesive layer and the etched layer, the storage modulus (shear storage modulus) G' of the etched layer at 23°C and 1 Hz, the storage modulus (shear storage modulus) G' of the first adhesive layer at -20°C / 23°C / 140°C and 1 Hz, the ultraviolet absorption rate of the etched layer and the first adhesive layer, the ball adhesion of the adhesive tape, and the surface peel force of the first adhesive layer of the adhesive tape were measured. Furthermore, the gel fraction of the second adhesive layer was determined by the same method as described in "(3) Determination of the gel fraction of the first adhesive layer and the etched layer".

[0141] (Examples 20 and 21) Except for the changes to each layer as shown in Table 4, the adhesive tape is obtained in the same manner as in Example 19.

[0142] (2) Adhesive strength of the second adhesive layer of the adhesive tape The double-sided adhesive tape obtained by the above method was cut into 25 mm wide pieces. A PET film, cut into 30 mm wide pieces and 25 μm thick, was then attached to the surface of the first adhesive layer of the double-sided adhesive tape. Next, the surface of the second adhesive layer was attached to a glass plate at a speed of 300 mm / min using a 2 kg pressing rubber roller at room temperature (23°C) and relative humidity (50%). Then, using Autograph (manufactured by Shimadzu Corporation), at a temperature of 23°C and relative humidity of 50%, the second adhesive layer side of the double-sided adhesive tape was peeled off in a 180° direction at a speed of 300 mm / min, and the 180° adhesion was measured.

[0143] <Evaluation> The adhesive tapes obtained in the examples and comparative examples were evaluated as follows. The results are shown in Tables 3, 4, and 5.

[0144] (1) Evaluation of laser ablation (1-1-1) Retention and peeling properties of wafer components An adhesive tape was attached to the Si wafer side of a wafer containing 10 Si wafers (500 μm × 500 μm square, 50 μm thick). The Si wafers were then positioned onto the adhesive tape by wafer peeling. Using a semiconductor solid-state laser, 365 nm laser light with an output of 4 W and 4 kHz was irradiated from the substrate side of the adhesive tape onto each Si wafer, causing the Si wafers to peel off from the adhesive tape. The case where all Si wafers can be placed on the adhesive tape from the wafer is set as "0", the case where 8 to 9 Si wafers can be placed on the adhesive tape is set as "△", and the case where 7 or fewer Si wafers can be placed on the adhesive tape is set as "×". This is used to evaluate the retention performance of the wafer components. The peeling performance of the wafer components was evaluated by marking the self-adhesive tape as follows: "◎" for peeling off all 10 Si wafers, "〇" for peeling off 8-9 Si wafers, "△" for peeling off 7 Si wafers, and "×" for peeling off 6 or fewer Si wafers. When the adhesive tape has a second adhesive layer, the evaluation was conducted with the second adhesive layer bonded to a 2 mm thick glass support.

[0145] (1-1-2) Paste residue After evaluating the retention and peeling performance of the wafer components, the surface of the Si wafer after peeling off the self-adhesive tape was observed under a microscope to confirm the presence of any paste residue. A case with no paste residue was marked as "◎", a case where less than 20% of the wafer component's surface area had paste residue was marked as "〇", and a case where more than 20% of the wafer component's surface area had paste residue was marked as "×". This method was used to evaluate the presence of paste residue.

[0146] (1-2-1) Retention and peeling performance of small-sized wafer components For the adhesive tapes obtained in Examples 1, 15-23, the obtained adhesive tapes were attached to the Si wafer side of a wafer on which 10 smaller Si wafers (30 μm × 40 μm square, 10 μm thick) were arranged. Then, the Si wafers were placed on the adhesive tapes by peeling off the wafers. Using a semiconductor solid-state laser, 365 nm laser light with an output of 4 W and 4 kHz was irradiated from the substrate side of the adhesive tape onto each Si wafer, and the Si wafers were peeled off from the adhesive tapes. The case where all Si wafers can be placed on the adhesive tape from the wafer is set as "0", the case where 8 to 9 Si wafers can be placed on the adhesive tape is set as "△", and the case where 7 or fewer Si wafers can be placed on the adhesive tape is set as "×". This is used to evaluate the retention performance of the wafer components. The peeling performance of wafer components (small wafers) is evaluated by marking the case where all 10 Si wafers can be peeled off as "◎", the case where 8 to 9 wafers can be peeled off as "〇", and the case where 7 or fewer Si wafers can be peeled off as "×". When the adhesive tape has a second adhesive layer, the evaluation is performed with the second adhesive layer bonded to a glass support with a thickness of 2 mm.

[0147] (1-2-2) Paste residue in smaller chip components After evaluating the retention and peeling performance of smaller wafer components, the surface of the Si wafer after self-adhesive tape peeling was observed using a microscope to confirm the presence of any paste residue. A case with no paste residue was marked as "◎", a case where less than 20% of the wafer component's surface area had paste residue was marked as "〇", and a case where more than 20% of the wafer component's surface area had paste residue was marked as "×". This method was used to evaluate paste residue.

[0148] (1-2-3) Debonding from the glass support Regarding Examples 19-21, after evaluating the retention and peeling performance of small-sized wafer components, the interface between the adhesive tape and the glass support was observed using a microscope to confirm whether the second adhesive layer peeled off from the support. A case where peeling did not occur was marked as "0", and a case where peeling occurred was marked as "×", thus evaluating the peeling off from the support.

[0149] (2) Measurement of 180° adhesion and evaluation of end curling This evaluation is only performed on the adhesive tapes obtained in Examples 5, 6, 8, 12, 13 and 14. Using an Autograph (manufactured by Shimadzu Corporation), according to JIS Z0237, a peel test was conducted by peeling the substrate layer from the barrier layer in a 180° direction at a tensile speed of 300 mm / min under an environment of 23°C and 50% relative humidity. The 180° adhesion (N / 25 mm) was measured. The 180° adhesion between the substrate and the etched layer, and the 180° adhesion between the etched layer and the barrier layer were also measured. Furthermore, an adhesive tape sheet with a width of 1000 mm and a length of 20 m was prepared in the same manner as in the embodiments. The sheet was cut along its length in a width of 300 mm (cut into strips). The warping between the substrate and the barrier layer at the ends (cut surfaces) of the cut adhesive tape was observed using an optical microscope (manufactured by Keyence Corporation). No end warping was observed was marked as "0", and one or more instances of end warping were observed as "×", thus evaluating the end warping.

[0150] [Table 3] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Second adhesive layer adhesive - - - - - - - - - - - - - - thickness - - - - - - - - - - - - - - gel fraction - - - - - - - - - - - - - - substrate Material PET PET PET PET PET PET PET PET PET PET PET PET PET PET thickness 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 23 μm 50 μm Haze 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.8% 3.2% 3.8% Erosion layer adhesive A A B A A C C D E F A G G H thickness 16 μm 16 μm 16 μm 16 μm 16 μm 16 μm 16 μm 16 μm 16 μm 16 μm 16 μm 8 μm 8 μm 8 μm gel fraction 40% 40% 0% 40% 40% 90% 90% 88% 72% 40% 40% 40% 40% 61% Storage elastic modulus G' 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 3.0×10⁵ Pa 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 1.7×10⁵ Pa 1.7×10⁵ Pa 5.9 × 10⁴ Pa 2.9 × 10⁴ Pa 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 5.8×10⁴ Pa 5.8×10⁴ Pa 5.8×10⁴ Pa UV absorption rate 99% 99% 99% 99% 99% 99% 99% 99% 99% 85% 99% 99% 99% 99% barrier layer Material PET PET PET PET PET PET PET PET PET PET OPP PET PET PET thickness 4 μm 12 μm 4 μm 4 μm 4 μm 4 μm 4 μm 4 μm 4 μm 4 μm 20 μm 4 μm 4 μm 4 μm Easy to adhere resin layer thickness - - - - - - - - - - - - - - First adhesive layer adhesive A A A B C C C D E F A C C C thickness 10 μm 10 μm 10 μm 10 μm 10 μm 10 μm 25 μm 10 μm 10 μm 10 μm 10 μm 8 μm 8 μm 8 μm gel fraction 89% 89% 89% 0% 92% 92% 92% 88% 65% 89% 89% 92% 92% 92% Fracture strength 0.4 MPa 0.4 MPa 0.4 MPa 3.5 MPa 2.0 MPa 2.0 MPa 2.0 MPa 1.4 MPa 0.7 MPa 0.4 MPa 0.4 MPa 2.0 MPa 2.0 MPa 2.0 MPa G' 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 3.0 × 10⁵ Pa 1.7 × 10⁵ Pa 1.7 × 10⁵ Pa 1.7 × 10 5 Pa 5.9 × 10⁴ Pa 2.9 × 10⁴ Pa 5.8 × 10 4 Pa 5.8 × 10 4 Pa 1.7 × 10 5 Pa 1.7 × 10 5 Pa 1.7 × 10 5 Pa -20℃。 G' 4.7 × 10⁵ Pa 4.7 × 10⁵ Pa 4.7 × 10⁵ Pa 8.8 × 10⁵ Pa 6.5 × 10⁶ Pa 6.5 × 10⁶ Pa 6.5 × 10⁶ Pa 4.8 × 10⁵ Pa 1.0×10⁵ Pa 4.5×10⁵ Pa 4.7×10⁵ Pa 6.5×10⁶ Pa 6.5×10⁶ Pa 6.5×10⁶ Pa Storage elastic modulus G' at 140℃ 2.1×10⁴ Pa 2.1×10⁴ Pa 2.1×10⁴ Pa 7.1×10⁴ Pa 1.0×10⁴ Pa 1.0×10⁴ Pa 1.0×10⁴ Pa 3.3×10⁴ Pa 1.8 × 10⁴ Pa 2.0×10⁴ Pa 2.1×10⁴ Pa 1.0×10⁴ Pa 1.0×10⁴ Pa 1.0×10⁴ Pa UV absorption rate 99% 99% 99% 99% 99% 99% 99% 99% 99% 70% 99% 99% 99% 99% Adhesive tape ball viscosity No 8 8 8 4 7 6 10 10 6 8 8 7 7 7 Peel force of the first adhesive layer of the adhesive tape 0.74 MPa 0.75 MPa 0.74 MPa 0.62 MPa 0.69 MPa 0.70 MPa 0.81 MPa 0.69 MPa 0.66 MPa 0.78 MPa 0.79 MPa 0.67 MPa 0.68 MPa 0.68 MPa Adhesive strength of the second adhesive layer of the adhesive tape - - - - - - - - - - - - - - evaluate 500 μm × 500 μm square Retention performance of chip components 〇 〇 〇 △ 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Peeling performance of wafer components ◎ 〇 △ 〇 ◎ ◎ ◎ ◎ ◎ 〇 〇 ◎ ◎ ◎ Paste residue 〇 〇 〇 ◎ ◎ ◎ ◎ ◎ 〇 〇 〇 ◎ ◎ ◎ 30 μm × 40 μm square Retention performance of chip components 〇 - - - - - - - - - - - - - Peeling performance of wafer components △ - - - - - - - - - - - - - Paste residue △ - - - - - - - - - - - - - Peeling from the glass support - - - - - - - - - - - - - - 180° adhesion Substrate-Etching Interlayer - - - - 18.1 N / 25 mm 5.5 N / 25 mm - 6.6 N / 25 mm - - - 10.5 N / 25 mm 9.8 N / 25 mm 6.8 N / 25 mm Erosion layer-barrier layer interlayer - - - - 18.1 N / 25 mm 5.5 N / 25 mm - 6.6 N / 25 mm - - - 10.5 N / 25 mm 9.8 N / 25 mm 6.8 N / 25 mm End curled up - - - - 〇 × - 〇 - - - 〇 〇 〇

[0151] [Table 4] Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 Second adhesive layer adhesive - - - - P Q R - - - thickness - - - - 10 μm 10 μm 10 μm - - - gel fraction - - - - 40% 37% 43% - - - substrate Material PET PET PET PET PET PET PET PET PET PET thickness 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm 50 μm Haze 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Erosion layer adhesive J J J J J J J N O I thickness 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm gel fraction 82% 82% 82% 82% 82% 82% 82% 80% 83% 73% Storage elastic modulus G' 4.3×10⁴ Pa 4.3 × 10⁴ Pa 4.3×10⁴ Pa 4.3×10⁴ Pa 4.3×10⁴ Pa 4.3 × 10⁴ Pa 4.3×10⁴ Pa 4.3×10⁴ Pa 4.3 × 10⁴ Pa 1.8 × 10⁴ Pa UV absorption rate 99% 99% 99% 99% 99% 99% 99% 99% 99% 99% barrier layer Material PET PET PET PET PET PET PET PET PET PET thickness 5.5 μm 5.5 μm 5.5 μm 5.5 μm 5.5 μm 5.5 μm 5.5 μm 5.5 μm 5.5 μm 5.5 μm Easy to adhere resin layer thickness 0.12 μm 0.12 μm 0.12 μm 0.12 μm 0.12 μm 0.12 μm 0.12 μm 0.12 μm 0.12 μm 0.12 μm First adhesive layer adhesive C K L M K K K L L I thickness 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm 8 μm gel fraction 92% 86% 91% 94% 86% 86% 86% 91% 91% 73% Fracture strength 2.0 MPa 6.3 MPa 4.4 MPa 6.1 MPa 6.3 MPa 6.3 MPa 6.3 MPa 4.4 MPa 4.4 MPa 0.1 MPa Storage elastic modulus G' at 23°C 1.7×10⁵ Pa 1.1×10⁶ Pa 2.7×10⁵ Pa 1.1×10⁶ Pa 1.1×10⁶ Pa 1.1×10⁶ Pa 1.1×10⁶ Pa 2.7×10⁵ Pa 2.7×10⁵ Pa 1.8 × 10⁴ Pa Storage elastic modulus G' at -20℃ 6.5×10⁶ Pa 1.3×10⁷ Pa 1.3×10⁷ Pa 5.2 × 10⁶ Pa 1.3×10⁷ Pa 1.3×10⁷ Pa 1.3×10⁷ Pa 1.3×10⁷ Pa 1.3×10⁷ Pa 1.8×10⁵ Pa Storage elastic modulus G' at 140℃ 1.0×10⁴ Pa 9.2 × 10⁴ Pa 8.8 × 10⁴ Pa 1.8×10⁵ Pa 9.2 × 10⁴ Pa 9.2 × 10⁴ Pa 9.2 × 10⁴ Pa 8.8 × 10⁴ Pa 8.8 × 10⁴ Pa 1.4 × 10⁴ Pa UV absorption rate 99% 99% 99% 99% 99% 99% 99% 99% 99% 99% Adhesive tape ball viscosity No 7 Less than 4 Less than 4 Less than 4 Less than 4 Less than 4 Less than 4 Less than 4 Less than 4 12 Peel force of the first adhesive layer of the adhesive tape 0.68 MPa 0.45 MPa 0.51 MPa 0.71 MPa 0.45 MPa 0.45 MPa 0.45 MPa 0.51 MPa 0.51 MPa 0.33 MPa Adhesive strength of the second adhesive layer of the adhesive tape - - - - 3.3 N / 25 mm 6.4 N / 25 mm 14.2 N / 25 mm - - - evaluate 500 μm × 500 μm square Retention performance of chip components 〇 △ △ △ △ △ △ △ △ 〇 Peeling performance of wafer components ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Paste residue ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 〇 30 μm × 40 μm square Retention performance of chip components 〇 〇 〇 〇 〇 〇 〇 〇 〇 - Peeling performance of wafer components 〇 ◎ 〇 ◎ ◎ ◎ ◎ ◎ ◎ - Paste residue 〇 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ - Peeling from the glass support - - - - × 〇 〇 - - - 180° adhesion Substrate-Etching Interlayer - - - - - - - - - - Erosion layer-barrier layer interlayer - - - - - - - - - - End curled up - - - - - - - - - -

[0152] [Table 5] Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Second adhesive layer adhesive - - - - thickness - - - - gel fraction - - - - substrate Material PET PET PET PET thickness 50 μm 50 μm 50 μm 50 μm Haze 3.8% 3.8% 3.8% 3.8% Erosion layer adhesive - A - - thickness 16 μm gel fraction 40% Storage elastic modulus G' 5.8 × 10⁴ Pa UV absorption rate 99% barrier layer Material - - - - thickness Easy to adhere resin layer thickness - - - - First adhesive layer adhesive A A A K thickness 20 μm 10 μm 100 μm 8 μm gel fraction 89% 89% 89% 86% Fracture strength 0.4 MPa 0.4 MPa 0.4 MPa 6.3 MPa Storage elastic modulus G' at 23°C 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 5.8 × 10⁴ Pa 1.1×10⁶ Pa Storage elastic modulus G' at -20℃ 4.7×10⁵ Pa 4.7×10⁵ Pa 4.7×10⁵ Pa 1.3×10⁷ Pa Storage elastic modulus G' at 140℃ 2.1×10⁴ Pa 2.1×10⁴ Pa 2.1×10⁴ Pa 9.2 × 10⁴ Pa UV absorption rate 99% 99% 99% 99% Adhesive tape ball viscosity No 6 10 14 Less than 4 Peel force of the first adhesive layer of the adhesive tape 0.79 MPa 0.82 MPa 1.05 MPa 0.51 MPa Adhesive strength of the second adhesive layer of the adhesive tape - - - - evaluate 500 μm × 500 μm square Retention performance of chip components 〇 〇 〇 △ Peeling performance of wafer components ◎ ◎ △ △ Paste residue × × × 〇 30 μm × 40 μm square Retention performance of chip components - - - - Peeling performance of wafer components - - - - Paste residue - - - - Peeling from the glass support - - - - 180° adhesion Substrate-Etching Interlayer - - - - Erosion layer-barrier layer interlayer - - - - End curled up - - - - [Industrial Applicability]

[0153] According to the present invention, an adhesive tape for semiconductor device manufacturing is provided, which has excellent peeling performance of wafer components and can suppress paste residue on wafer components.

[0154] 1: Chip components 1a: Electrode 4: Adhesive layer 4a: First adhesive layer 4b: Second adhesive layer 5: Substrate 7: Drive circuit board 7a: Electrode 8: Laser Irradiation Device 8a: Laser light 9: Laminate of substrate and adhesive layer 10: Erosion layer 11: Barrier layer 12: Adhesive tape for semiconductor device manufacturing

Claims

1. An adhesive tape for manufacturing a semiconductor device, characterized in that it sequentially comprises a substrate, an etch layer, a barrier layer, and a first adhesive layer, wherein the etch layer is a layer that is deformed by irradiation with laser light, the barrier layer is a layer that suppresses the scattering of the etch layer and deforms according to the deformation of the portion of the etch layer irradiated by laser light, and the surface peel strength of the first adhesive layer of the adhesive tape for manufacturing a semiconductor device is 1 MPa or less.

2. The adhesive tape for manufacturing semiconductor devices as claimed in claim 1, wherein, The above-mentioned substrate is a resin film.

3. The adhesive tape for manufacturing semiconductor devices as described in claim 2, wherein, The resin film mentioned above is a polyester film.

4. The adhesive tape for manufacturing semiconductor devices, as described in claims 1, 2, or 3, wherein, The aforementioned etched layer has an ultraviolet absorption rate of over 90% at a wavelength of 365 nm.

5. The adhesive tape for manufacturing semiconductor devices as described in claims 1, 2, or 3, wherein, The storage elastic modulus G' of the aforementioned eroded layer at 23°C is 1×10⁴ Pa or more and 2×10⁵ Pa or less.

6. The adhesive tape for manufacturing semiconductor devices as described in claims 1, 2, or 3, wherein, The thickness of the aforementioned barrier layer is less than 25 μm.

7. The adhesive tape for manufacturing semiconductor devices as claimed in claim 6, wherein, The thickness of the aforementioned barrier layer is less than 6 μm.

8. The adhesive tape for manufacturing semiconductor devices as described in claims 1, 2, or 3, wherein, The aforementioned barrier layer is a polyester film.

9. The adhesive tape for manufacturing semiconductor devices as claimed in items 1, 2, or 3, wherein, The barrier layer has an easily bondable resin layer on the surface that contacts the first adhesive layer.

10. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The tensile strength of the first adhesive layer is 1 MPa or higher.

11. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The storage elastic modulus G' of the first adhesive layer at 23°C is 1×10⁴ Pa or more and 2×10⁵ Pa or less.

12. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The first adhesive layer mentioned above contains an ABA-type block copolymer.

13. The adhesive tape for manufacturing semiconductor devices as claimed in claim 12, wherein, In the above-mentioned ABA-type block copolymer, block A contains a structure derived from aromatic vinyl monomers, and block B contains a structure derived from (meth)acrylic monomers.

14. The adhesive tape for manufacturing semiconductor devices as claimed in claim 12, wherein, Block B described above has a structure derived from a monomer containing cross-linking functional groups.

15. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The gel content of the first adhesive layer is 70% by weight or more and 95% by weight or less.

16. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The thickness of the first adhesive layer is 5 μm or more and 30 μm or less.

17. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The ball tack of the adhesive tape used in the manufacture of the aforementioned semiconductor devices is No. 5 or higher.

18. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The adhesion between the substrate and the etched layer is 6 N / 25 mm or more.

19. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The adhesion between the aforementioned erosion layer and the aforementioned barrier layer is greater than 6 N / 25 mm.

20. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2, or 3, wherein, The first adhesive layer mentioned above is a hardened adhesive layer.

21. The adhesive tape for manufacturing a semiconductor device, as claimed in claims 1, 2 or 3, further having a second adhesive layer, and having the second adhesive layer, the substrate, the etch layer, the barrier layer and the first adhesive layer in sequence.

22. The adhesive tape for manufacturing semiconductor devices as claimed in claims 1, 2 or 3, used in the manufacture of semiconductor devices having a step of irradiating laser light.

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