Methods of forming device

Abstract

The embodiments disclosed herein generally relate to methods for enhancing carbon hard masks to have improved etch selectivity and contour control. In some embodiments, a method for processing a carbon hard mask layer is provided, the method comprising the steps of: positioning a workpiece in a processing area of ​​a processing chamber, wherein the workpiece has a carbon hard mask layer disposed on or above a substrate; and processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a denser alumina-carbon hybrid hard mask than the carbon hard mask layer. The SIS process includes exposing and infiltrating the carbon hard mask layer with an aluminum precursor, purging to remove gaseous residues, exposing and infiltrating the carbon hard mask layer with an oxidant to produce an alumina coating disposed on an inner surface of the carbon hard mask layer, and purging the processing area to remove gaseous residues.

Description

Aluminum Carbon Hybrid Hard Mask and Method of Manufacturing the Same This application claims the benefit of U.S. Provisional Application No. 63 / 419,589, filed on October 26, 2022, the content of which is incorporated herein by reference in its entirety. Embodiments of the present disclosure generally relate to photoresist technology, and more specifically to methods for enhancing photoresist to have improved etch selectivity and profile control. Integrated circuits have evolved into complex devices that can include millions of components (e.g., transistors, capacitors, and resistors) on a single chip. Lithography can be used to form components on the chip. Generally, the lithography process involves forming a photoresist layer on a substrate. The photoresist layer can be formed by, for example, spin coating. The photoresist layer can include a resist resin and a photoacid generator. When exposed to electromagnetic radiation during a subsequent exposure stage, the photoacid generator changes the solubility of the photoresist in a development process. The electromagnetic radiation can have any suitable wavelength (e.g., a wavelength in the extreme ultraviolet region) and can come from any suitable source (e.g., an ArF laser at 193 nm, an electron beam, an ion beam, or other sources). Then, excess solvent can be removed in a pre-exposure bake process. During the exposure stage, a photomask or reticle can be used to selectively expose certain areas of the photoresist layer disposed on the substrate to electromagnetic radiation. Other exposure methods can be maskless exposure methods. Exposure to light may decompose the photoacid generator, generating acid and resulting in a latent acid image in the resist resin. After exposure, the substrate can be heated in a post-exposure bake process. During the post-exposure bake process, the acid generated by the photoacid generator reacts with the resist resin in the photoresist layer, changing the solubility of the resist in the photoresist layer during a subsequent development process. After the post-exposure bake, the substrate and the photoresist layer are developed and rinsed. Subsequently, a patterned photoresist layer is formed on the substrate. After the development and rinse process, openings are defined within the patterned photoresist layer to expose the underlying target material for etching to transfer features to the target material. Factors (e.g., inaccurate control or low resolution of the lithography exposure process, or elasticity of the patterned layer) may result in poor critical dimensions of the patterned photoresist layer, leading to unacceptable line width roughness (LWR). A large line width roughness (LWR) of the patterned photoresist layer may result in inaccurate feature transfer to the target material, ultimately leading to premature device failure and yield loss. Carbon-based hard masks are a specific type of photoresist material used in the industry. However, existing carbon-based hard mask materials have limited etch selectivity between the PR layer and the corresponding underlying layer. Carbon-based hard masks have limited etch resistance and typically deteriorate or are damaged slightly during an etching process. In addition, existing carbon-based hard mask materials suffer from pattern transfer defects and moderate line edge roughness (LER) and line width roughness (LWR). Therefore, there is a need for an improved carbon-based hard mask that overcomes these drawbacks and a method for preparing such a carbon-based hard mask. Embodiments of the present disclosure generally relate to a hard mask having improved etch selectivity and profile control and a method for preparing a hard mask. The hard mask is an alumina-carbon hybrid hard mask that can be prepared from a carbon hard mask. For example, the carbon hard mask layer can be processed by sequential infiltration synthesis (SIS) treatment to fabricate or otherwise produce an alumina-carbon hybrid hard mask. In one or more embodiments, a method for processing a carbon hard mask layer is provided. The method includes the steps of positioning a workpiece in a processing area of a processing chamber, where the workpiece has a carbon hard mask layer disposed on or above a substrate; and processing the carbon hard mask layer by exposing the workpiece to SIS treatment to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer. The SIS treatment includes one or more infiltration cycles, and each of the infiltration cycles includes: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purifying the processing area to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing area to remove gaseous residues containing the oxidant. In other embodiments, a method for forming a device is provided. The method includes the steps of positioning a workpiece in a processing area of a processing chamber, where the workpiece includes a carbon hard mask layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the carbon hard mask layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method also includes the steps of etching the silicon-containing hard mask and the carbon hard mask layer to each have the feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to SIS treatment to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the substrate to have the feature pattern of the patterned photoresist layer. In some embodiments, a method of forming a device is provided, the method comprising the steps of: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece includes a metal or metal nitride layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the metal or metal nitride layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method further comprises the steps of: etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer. The method also comprises the steps of: processing the carbon hard mask layer by exposing the workpiece to an SIS process to produce an alumina carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the silicon-containing hard mask to produce a reverse pattern within the alumina carbon hybrid hard mask. In other embodiments, a method of forming a device is provided, the method comprising the steps of: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece includes a metal or metal nitride layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the metal or metal nitride layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method also comprises the steps of: etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto the upper surface of the patterned photoresist layer. The method further comprises the steps of: depositing a photoresist anti-reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while leaving a second portion of the carbon hard mask layer exposed. Additionally, the method comprises the steps of: etching the second portion of the carbon hard mask layer during a first mask etching process while maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece; and etching the PR-ARC layer during a second mask etching process while maintaining the first portion of the carbon hard mask layer on the workpiece. The method further comprises the steps of: processing the first portion of the carbon hard mask layer by exposing the workpiece to an SIS process to produce an alumina carbon hybrid hard mask that is denser than the carbon hard mask layer. Embodiments of the present disclosure are generally directed to hard masks having improved etch selectivity and profile control and methods for preparing hard masks. The hard mask is an alumina-carbon hybrid hard mask that can be prepared from a carbon hard mask. In one or more embodiments, the carbon hard mask layer is processed by sequential infiltration synthesis (SIS) processing to create or otherwise produce an alumina-carbon hybrid hard mask. The alumina-carbon hybrid hard mask is denser than the carbon hard mask layer used to form the alumina-carbon hybrid hard mask. The alumina-carbon hybrid hard mask can be used during the fabrication, manufacture, or preparation of various devices such as memory devices, logic devices, various microelectronic devices, and other types of devices. A variety of workpieces or devices including the alumina-carbon hybrid hard mask can be prepared, fabricated, processed, or otherwise manufactured by the methods described and discussed herein. FIGS. 1A-1C illustrate cross-sectional views of workpiece 100 at different stages of a processing treatment (e.g., SIS processing) as described and discussed in one or more embodiments herein. The SIS processing is used to produce a processed mask or patterned photoresist (PR) layer that is denser and harder than an unprocessed or original mask patterned PR layer. In one or more embodiments, a method of processing a carbon hard mask layer 110 is provided, the method including positioning workpiece 100 within a processing region of a processing chamber. As shown in FIG. 1A, workpiece 100 has a carbon hard mask layer 110 disposed on or above a bottom layer 104. As shown, bottom layer 104 can be formed, deposited, or otherwise disposed on any other layer (not shown) or substrate 102. The method includes processing carbon hard mask layer 110 by exposing workpiece 100 to SIS processing to produce an intermediate mask 118 (as shown in FIG. 1B), and then producing an alumina-carbon hybrid hard mask 120 (as shown in FIG. 1C). Alumina-carbon hybrid hard mask 120 is denser than carbon hard mask layer 110. In one or more instances, the SIS process includes one or more infiltration cycles, and each of the infiltration cycles includes sequentially exposing the carbon hard mask layer 110 to an aluminum precursor, infiltrating the carbon hard mask layer 110 with the aluminum precursor through pores included in the aluminum precursor, and purifying the processing area to remove gaseous residues containing the aluminum precursor. At this stage, the carbon hard mask layer 110 begins to transform into an intermediate mask 118 having aluminum incorporated into and on the inner surface of the carbon hard mask layer 110. The SIS process further includes sequentially exposing the carbon hard mask layer 110 to an oxidant, infiltrating the carbon hard mask layer 110 with the oxidant through pores included in the carbon hard mask layer 110 to produce an aluminum oxide coating disposed on the inner surface of the carbon hard mask layer 110, and purifying the processing area to remove gaseous residues containing the oxidant. In some embodiments, the processing includes a single infiltration cycle to process the carbon hard mask layer 110. In other embodiments, the infiltration cycle can be repeated multiple times (e.g., 2 to about 100 times or more) to process the carbon hard mask layer 110. Depending on the application, the substrate 102 can be made of or include one or more materials (e.g., silicon, silicon oxide, doped silicon, silicon germanium, germanium, gallium arsenide, glass, sapphire) and any other materials (e.g., metals, metal nitrides, metal alloys, and other conductive or semiconductor materials), or include one or more materials and any other materials. The substrate 102 or its surface can also be made of a dielectric material (e.g., silicon dioxide, silicon nitride, organosilicate, and carbon-doped silicon oxide or silicon nitride materials). The substrate 102 can be any geometric shape (e.g., circular, square, or rectangular). In some instances, the substrate 102 is circular and has a diameter of 200 mm, 250 mm, 300 mm, or 450 mm. The bottom layer 104 can be or include an oxide layer or a silicon-containing layer (e.g., silicon oxide, amorphous silicon, tetraethyl orthosilicate (TEOS) layer, or a combination thereof). The bottom layer 104 can be formed or otherwise produced by chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD). In one or more embodiments, the bottom layer 104 can be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. In some embodiments, the bottom layer 104 can be or include a stack disposed on or above the substrate 102. In one or more instances, the stack includes alternating silicon oxide layers and silicon nitride layers. In one or more embodiments, the carbon hard mask layer 110 can be or include carbon, amorphous carbon, spin-on carbon (SOC), its dopants, or any combination thereof. The carbon hard mask layer 110 can be formed, deposited, or otherwise produced by one or more processes such as, for example, thermal chemical vapor deposition (CVD) processes, plasma enhanced CVD (PE-CVD) processes, flowable CVD (FCVD) processes, or spin-on processes. The carbon hard mask layer 110 can be or include a mask or other patterned layer developed, prepared, or otherwise produced by one or more processes. In some instances, the carbon hard mask layer 110 is prepared by a lithography process such as, for example, by extreme ultraviolet (EUV) lithography. The carbon hard mask layer 110 is porous and can have pores throughout the material including all surfaces of the carbon hard mask layer 110. As shown in FIG. 1A, the carbon hard mask layer 110 has been formed but remains unprocessed with respect to the SIS process described herein. In one or more embodiments, the thickness of the carbon hard mask layer 110 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As shown in FIGS. 1A-1C, the carbon hard mask layer 110 can be a patterned layer or include a patterned layer that includes a feature pattern of features 112. The height of the features 112 can be the same as or less than the thickness of the carbon hard mask layer 110. Thus, the height of the features 112 can range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The features 112 of the patterned layer or the carbon hard mask layer 110 are separated by vias, gaps, or spaces that can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The features 112 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200. In one or more embodiments, the carbon hard mask layer 110 can be or include a carbon-containing material having polar functional groups such as, for example, one or more C-H groups, one or more C-O groups, one or more C=O groups, or any combination thereof. During the SIS process, the polar functional groups on the inner surface of the carbon hard mask layer 110 contribute to the formation and / or deposition of the alumina coating of the intermediate mask 118. In some embodiments, the range of carbon contained in the carbon hard mask layer 110 can be from about 30 atomic percent (at%), about 40 at%, or about 50 at% to about 60 at%, about 70 at%, or about 80 at%. For example, the range of carbon contained in the carbon hard mask layer 110 can be about 30 at% to about 80 at%, about 40 at% to about 80 at%, about 50 at% to about 80 at%, about 60 at% to about 80 at%, about 70 at% to about 80 at%, about 30 at% to about 65 at%, about 40 at% to about 65 at%, about 50 at% to about 65 at%, about 60 at% to about 65 at%, about 30 at% to about 50 at%, about 40 at% to about 50 at%, or about 45 at% to about 50 at%. The range of hydrogen contained in the carbon hard mask layer 110 can be from about 10 at%, about 15 at%, about 20 at%, or about 25 at% to about 30 at%, about 35 at%, about 40 at%, about 45 at%, or about 50 at%. For example, the range of hydrogen contained in the carbon hard mask layer 110 can be about 10 at% to about 50 at%, about 15 at% to about 50 at%, about 20 at% to about 50 at%, about 25 at% to about 50 at%, about 30 at% to about 50 at%, about 40 at% to about 50 at%, about 10 at% to about 40 at%, about 15 at% to about 40 at%, about 20 at% to about 40 at%, about 25 at% to about 40 at%, about 30 at% to about 40 at%, about 35 at% to about 40 at%, about 10 at% to about 30 at%, about 15 at% to about 30 at%, about 20 at% to about 30 at%, or about 25 at% to about 30 at%. The range of oxygen contained in the carbon hard mask layer 110 can be from about 1 at%, about 2 at%, about 3 at%, about 3 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 16 at%, about 18 at%, or about 20 at%. For example, the range of oxygen contained in the carbon hard mask layer 110 can be about 1 at% to about 20 at%, about 2 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 1 at% to about 15 at%, about 2 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 15 at% to about 15 at%, about 18 at% to about 15 at%, about 1 at% to about 10 at%, about 2 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. In one or more instances, the carbon hard mask layer 110 can include from about 30 at% to about 80 at% carbon, from about 10 at% to about 50 at% hydrogen, and from about 10 at% to about 20 at% oxygen. In some instances, the carbon hard mask layer 110 can include from about 40 at% to about 60 at% carbon, from about 20 at% to about 40 at% hydrogen, and from about 12 at% to about 18 at% oxygen. In other instances, the carbon hard mask layer 110 can include from about 45 at% to about 55 at% carbon, from about 25 at% to about 35 at% hydrogen, and from about 14 at% to about 16 at% oxygen. FIG. 1B illustrates a workpiece 100 having an intermediate mask 118 with an aluminum precursor or other metal precursor absorbed or otherwise incorporated into and onto the inner surface of the carbon hard mask layer 110. The precursor coating or other infiltration coating is disposed throughout the inner surface of the carbon hard mask layer 110. The aluminum or other metal precursor penetrates through the pores contained throughout the carbon hard mask layer 110. The infiltration coating includes absorbing and / or condensing amounts of the precursor (e.g., during a first processing segment of an SIS process). Thereafter, during a second processing segment of the SIS process, the processing region of the processing chamber can be purged to remove excess or residual precursor within the processing region. Figure 1C illustrates a workpiece 100 having an alumina-carbon hybrid hard mask 120, which includes an alumina (or other metal oxide) coating formed within and on a carbon hard mask layer 110. During a third processing section of the SIS process, the infiltration coating is oxidized by exposure to an oxidizing agent to form the oxide coating of the alumina-carbon hybrid hard mask 120. Thereafter, during a fourth processing section of the SIS process, the processing area of the processing chamber can be purged to remove excess or residual precursors within the processing area. The alumina-carbon hybrid hard mask 120 including the alumina coating shown in Figure 1C is denser and harder than the carbon hard mask layer 110 shown in Figure 1A. The alumina-carbon hybrid hard mask 120 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 120 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 120 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of oxygen contained in the alumina-carbon hybrid hard mask 120 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 120 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of carbon contained in the alumina-carbon hybrid hard mask 120 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 120 can be about 40 at% to about 90 at%, about 50 at% to about 90 at%, about 60 at% to about 90 at%, about 70 at% to about 90 at%, about 80 at% to about 90 at%, about 40 at% to about 75 at%, about 50 at% to about 75 at%, about 60 at% to about 75 at%, about 70 at% to about 75 at%, about 40 at% to about 60 at%, about 45 at% to about 60 at%, about 50 at% to about 60 at%, or about 55 at% to about 60 at%. In one or more instances, the alumina-carbon hybrid hard mask 120 may include from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and from about 50 at% to about 90 at% carbon. In some instances, the alumina-carbon hybrid hard mask 120 may include from about 10 at% to about 20 at% aluminum, from about 10 at% to about 30 at% oxygen, and from about 50 at% to about 80 at% carbon. In one or more instances, the alumina-carbon hybrid hard mask 120 may include from about 5 at% to about 10 at% aluminum, from about 5 at% to about 20 at% oxygen, and from about 70 at% to about 90 at% carbon. The thickness of the alumina-carbon hybrid hard mask 120 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As shown in FIG. 1C, the alumina-carbon hybrid hard mask 120 may be a patterned layer or include a patterned layer that includes a feature pattern of the feature 112. The height of the feature 112 may be the same as or less than the thickness of the alumina-carbon hybrid hard mask 120. Thus, the height of the feature 112 may range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The features 112 of the patterned layer or the alumina-carbon hybrid hard mask 120 are separated by vias, gaps, or spaces, and the vias, gaps, or spaces may have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The feature 112 may have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200. Sequential infiltration synthesis (SIS) process As shown in FIGS. 1A-1C, the SIS process described and discussed herein for preparing the alumina-carbon hybrid hard mask 120 from the carbon hard mask layer 110 may also be used to convert any carbon hard mask layer into an alumina-carbon hybrid hard mask (e.g., as shown in FIGS. 2A-4G). In one or more instances, the SIS process includes: exposing the carbon hard mask layer 110 to one or more infiltration cycles of an aluminum precursor (e.g., one or more aluminum precursors); infiltrating the carbon hard mask layer 110 with the precursor through pores contained in the carbon hard mask layer 110; purifying the processing area to remove gaseous residues containing the precursor; exposing the carbon hard mask layer 110 to an oxidizing agent; infiltrating the carbon hard mask layer 110 with the oxidizing agent through pores contained in the carbon hard mask layer 110 to produce an alumina coating disposed on the inner surface of the carbon hard mask layer 110; and purifying the processing area to remove gaseous residues containing the oxidizing agent. Each of the infiltration cycles processed by SIS includes a first processing section that is exposed and infiltrated by a precursor, a second processing section that purifies the processing area to remove residual gaseous precursors, a third processing section that is exposed and infiltrated by an oxidant, and a fourth processing section that purifies the processing area to remove residual gaseous precursors. During each of the infiltration cycles, the processing sections of the infiltration cycle are repeated in sequence. During the first and third processing sections of the SIS process, one or more carrier gases may flow into the processing area together with the precursor and / or the oxidant, respectively. During the second and fourth processing sections of the SIS process, one or more purge gases may flow into the processing area that is also evacuated. The carrier gas and the purge gas may be the same composition or different compositions. Exemplary carrier gases and / or purge gases may be or include argon, helium, neon, nitrogen (N 2 ), hydrogen (H 2 ), or any combination thereof. The processing region of the processing chamber is the internal volume within the processing chamber. During SIS processing, the processing region and / or the internal volume of the processing chamber is maintained at and / or adjusted to one or more pressures below atmospheric pressure or ambient pressure (e.g., less than 760 Torr). During SIS processing, the pressure of the processing region and / or the internal volume of the processing chamber ranges from about 0.01 Torr, about 0.1 Torr, about 1 Torr, about 1 Torr, about 5 Torr, about 10 Torr, about 15 Torr, about 20 Torr, about 25 Torr, about 35 Torr, or about 50 Torr to about 80 Torr, about 100 Torr, about 150 Torr, about 200 Torr, about 250 Torr, about 300 Torr, about 350 Torr, about 400 Torr, about 450 Torr, about 500 Torr, or about 600 Torr. For example, during SIS processing, the pressure of the processing region and / or the internal volume of the processing chamber ranges from about 0.01 Torr to about 600 Torr, about 0.01 Torr to about 500 Torr, about 0.01 Torr to about 400 Torr, about 0.01 Torr to about 350 Torr, about 0.01 Torr to about 300 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 200 Torr, about 0.01 Torr to about 150 Torr, about 0.01 Torr to about 100 Torr, about 0.01 Torr to about 50 Torr, about 0.1 Torr to about 600 Torr, about 0.1 Torr to about 500 Torr, about 0.1 Torr to about 400 Torr, about 0.1 Torr to about 350 Torr, about 0.1 Torr to about 300 Torr, about 0.1 Torr to about 250 Torr, about 0.1 Torr to about 200 Torr, about 0.1 Torr to about 150 Torr, about 0.1 Torr to about 100 Torr, about 0.from about 1 Torr to about 50 Torr, from about 1 Torr to about 600 Torr, from about 1 Torr to about 500 Torr, from about 1 Torr to about 400 Torr, from about 1 Torr to about 350 Torr, from about 1 Torr to about 300 Torr, from about 1 Torr to about 250 Torr, from about 1 Torr to about 200 Torr, from about 1 Torr to about 150 Torr, from about 1 Torr to about 100 Torr, from about 1 Torr to about 50 Torr, from about 10 Torr to about 600 Torr, from about 10 Torr to about 500 Torr, from about 10 Torr to about 400 Torr, from about 10 Torr to about 350 Torr, from about 10 Torr to about 300 Torr, from about 10 Torr to about 250 Torr, from about 10 Torr to about 200 Torr, from about 10 Torr to about 150 Torr, from about 10 Torr to about 100 Torr, from about 10 Torr to about 50 Torr, from about 15 Torr to about 600 Torr, from about 15 Torr to about 500 Torr, from about 15 Torr to about 400 Torr, from about 15 Torr to about 350 Torr, from about 15 Torr to about 300 Torr, from about 15 Torr to about 250 Torr, from about 15 Torr to about 200 Torr, from about 15 Torr to about 150 Torr, from about 15 Torr to about 100 Torr, from about 15 Torr to about 50 Torr, from about 50 Torr to about 600 Torr, from about 50 Torr to about 500 Torr, from about 50 Torr to about 400 Torr, from about 50 Torr to about 350 Torr, from about 50 Torr to about 300 Torr, from about 50 Torr to about 250 Torr, from about 50 Torr to about 200 Torr, from about 50 Torr to about 150 Torr, from about 50 Torr to about 100 Torr, from about 100 Torr to about 600 Torr, from about 100 Torr to about 500 Torr, from about 100 Torr to about 400 Torr, from about 100 Torr to about 350 Torr, from about 100 Torr to about 300 Torr, from about 100 Torr to about 250 Torr, from about 100 Torr to about 200 Torr, or from about 100 Torr to about 150 Torr. In one or more instances, during SIS processing, the pressure of the processing region and / or the internal volume of the processing chamber is from about 0.01 Torr to about 250 Torr, or from about 0.1 Torr to about 50 Torr. During SIS processing, each of the first and third treatment segments of the infiltration cycle can independently last from about 20 seconds, about 30 seconds, about 35 seconds, about 40 seconds, or about 45 seconds to about 50 seconds, about 60 seconds, about 70 seconds, about 80 seconds, about 90 seconds, about 100 seconds, about 2 minutes, about 2.5 minutes, about 3 minutes, about 4 minutes, about 5 minutes, about 6 minutes, about 8 minutes, about 10 minutes, about 12 minutes, about 15 minutes, about 18 minutes, or about 20 minutes. For example, during SIS processing, each of the first and third treatment segments of the infiltration cycle can independently last from about 20 seconds to about 20 minutes, from about 20 seconds to about 15 minutes, from about 20 seconds to about 12 minutes, from about 20 seconds to about 10 minutes, from about 20 seconds to about 8 minutes, from about 20 seconds to about 6 minutes, from about 20 seconds to about 5 minutes, from about 20 seconds to about 4 minutes, from about 20 seconds to about 3 minutes, from about 20 seconds to about 2.5 minutes, from about 20 seconds to about 2 minutes, from about 20 seconds to about 100 seconds, from about 20 seconds to about 90 seconds, from about 20 seconds to about 75 seconds, from about 20 seconds to about 60 seconds, from about 20 seconds to about 45 seconds, from about 20 seconds to about 30 seconds, from about 40 seconds to about 5 minutes, from about 40 seconds to about 4 minutes, from about 40 seconds to about 3 minutes, from about 40 seconds to about 2.5 minutes, from about 40 seconds to about 2 minutes, from about 40 seconds to about 100 seconds, from about 40 seconds to about 90 seconds, from about 40 seconds to about 75 seconds, from about 40 seconds to about 60 seconds, from about 60 seconds to about 20 minutes, from about 60 seconds to about 15 minutes, from about 60 seconds to about 12 minutes, from about 60 seconds to about 10 minutes, from about 60 seconds to about 8 minutes, from about 60 seconds to about 6 minutes, from about 60 seconds to about 5 minutes, from about 60 seconds to about 4 minutes, from about 60 seconds to about 3 minutes, from about 60 seconds to about 2.5 minutes, from about 60 seconds to about 2 minutes, from about 60 seconds to about 100 seconds, from about 60 seconds to about 90 seconds, or from about 60 seconds to about 75 seconds. In one or more instances, during the first treatment segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to an aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer 110 with the aluminum precursor. In some instances, during the third treatment segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer 110 with the oxidant. During the SIS process, each of the second and fourth treatment segments of the infiltration cycle can independently last for about 20 seconds, about 30 seconds, about 35 seconds, about 40 seconds, about 45 seconds, about 50 seconds, about 60 seconds, about 70 seconds, about 80 seconds, about 90 seconds, about 100 seconds, about 2 minutes, about 2.5 minutes, about 3 minutes, about 4 minutes, about 5 minutes, about 6 minutes, about 8 minutes, about 10 minutes, about 12 minutes, about 15 minutes, about 20 minutes, about 25 minutes, or about 30 minutes. For example, during the SIS process, each of the second and fourth treatment segments of the infiltration cycle can independently last for about 20 seconds to about 30 minutes, about 20 seconds to about 25 minutes, about 20 seconds to about 20 minutes, about 20 seconds to about 15 minutes, about 20 seconds to about 12 minutes, about 20 seconds to about 10 minutes, about 20 seconds to about 8 minutes, about 20 seconds to about 6 minutes, about 20 seconds to about 5 minutes, about 20 seconds to about 4 minutes, about 20 seconds to about 3 minutes, about 20 seconds to about 2.5 minutes, about 20 seconds to about 2 minutes, about 20 seconds to about 100 seconds, about 20 seconds to about 90 seconds, about 20 seconds to about 75 seconds, about 20 seconds to about 60 seconds, about 20 seconds to about 45 seconds, about 20 seconds to about 30 seconds, about 40 seconds to about 5 minutes, about 40 seconds to about 4 minutes, about 40 seconds to about 3 minutes, about 40 seconds to about 2.5 minutes, about 40 seconds to about 2 minutes, about 40 seconds to about 100 seconds, about 40 seconds to about 90 seconds, about 40 seconds to about 75 seconds, about 40 seconds to about 60 seconds, about 60 seconds to about 20 minutes, about 60 seconds to about 15 minutes, about 60 seconds to about 12 minutes, about 60 seconds to about 10 minutes, about 60 seconds to about 8 minutes, about 60 seconds to about 6 minutes, about 60 seconds to about 5 minutes, about 60 seconds to about 4 minutes, about 60 seconds to about 3 minutes, about 60 seconds to about 2.5 minutes, about 60 seconds to about 2 minutes, about 60 seconds to about 100 seconds, about 60 seconds to about 90 seconds, or about 60 seconds to about 75 seconds. In one or more instances, during the second treatment segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to a purge gas for about 1 minute to about 30 minutes while purging the treatment area to remove gaseous residues containing aluminum precursors. In other instances, during the fourth treatment segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to a purge gas for about 1 minute to about 30 minutes while purging the treatment area to remove gaseous residues containing oxidants. During the SIS process, the infiltration cycle can be performed one, two, or more times. During each of the infiltration cycles, the processing segments of the infiltration cycle are repeated in sequence. In some examples, during the SIS process, the infiltration cycle ranges from repeating 2, 3, 4, or 5 times to repeating 6, 7, 8, 9, about 10, about 12, about 15, about 20, about 30, about 40, about 50, about 60, about 80, about 100, or more times. For example, during the SIS process, the infiltration cycle repeats 2 to about 100 times, 2 to about 80 times, 2 to about 50 times, 2 to about 20 times, 2 to about 15 times, 2 to about 10 times, 2 to 8 times, 2 to 5 times. In one or more examples, the SIS process includes 1 cycle to about 100 cycles, 5 cycles to about 80 cycles, about 10 cycles to about 50 cycles, or about 20 cycles to about 40 cycles of the infiltration cycle. The precursor exposed to the carbon hard mask layer 110 can be one or more aluminum precursors or other metal precursors. The oxidizing agent can be or include any compound or reagent that oxidizes the aluminum precursor to produce aluminum oxide or another metal precursor to produce the corresponding metal oxide. The oxidizing agent can be or include water, ozone, oxygen plasma, oxygen radicals, oxygen (O 2 ), hydrogen peroxide, or any combination thereof. In one or more embodiments, the precursor is one or more aluminum precursors or includes one or more aluminum precursors, and the oxide coating formed within the carbon hard mask layer 110 is aluminum oxide or includes aluminum oxide. The aluminum precursor can be or include one or more alkyl aluminum compounds, one or more alkoxy aluminum compounds, one or more halogenated aluminum compounds, aluminum hydride, or any combination thereof. In some examples, the aluminum precursor is trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, dimethylaluminum, diethylaluminum, dipropylaluminum, dibutylaluminum, their complexes, or their combinations, or includes trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, dimethylaluminum, diethylaluminum, dipropylaluminum, dibutylaluminum, their complexes, or their combinations. In one or more examples, the aluminum precursor is one or more alkyl aluminum compounds (e.g., trimethylaluminum) or includes one or more alkyl aluminum compounds, and the oxidizing agent is water, or includes water. In other examples, the aluminum precursor is one or more alkoxy aluminum compounds or includes one or more alkoxy aluminum compounds, and the oxidizing agent is ozone or oxygen plasma or includes ozone or oxygen plasma. Figures 2A through 2D illustrate cross-sectional views of workpiece 200 at different stages of a process for fabricating or otherwise forming a device, as described and discussed herein. The device may be or include a memory device, a logic device, a microelectronic device, and / or other devices. In one or more embodiments, a method for forming a device is provided, the method including the steps of positioning workpiece 200 within a processing region of a processing chamber. Workpiece 200 includes a carbon hard mask layer 210 disposed on or above a bottom layer 204, a silicon-containing hard mask 230 disposed on or above carbon hard mask layer 210, and a patterned photoresist (PR) layer 240 having a feature pattern with features 242 disposed on silicon-containing hard mask 230. The method also includes the steps of etching silicon-containing hard mask 230 and carbon hard mask layer 210 to each have features 242 of patterned PR layer 240; generating an alumina-carbon hybrid hard mask 220 by exposing workpiece 200 to SIS processing; and etching bottom layer 204 to have features 242 of patterned PR layer 240. Bottom layer 204 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. Bottom layer 204 may be or include a stack disposed on or above substrate 202. In one or more instances, the stack includes alternating layers of silicon oxide and silicon nitride. Substrate 202 may be or include any type of substrate (including substrate 102 as described and discussed above). In some instances, bottom layer 204 may be or include any type of one or more layers (including bottom layer 104 as described and discussed above). As shown in Figure 2A, patterned PR layer 240 may be deposited, formed, positioned, or otherwise disposed on silicon-containing hard mask 230. In one or more embodiments, patterned PR layer 240 may be generated or otherwise formed by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing. In one or more instances, patterned PR layer 240 may be or include an EUV stack, the EUV stack including a PR layer below a bottom anti-reflective coating (BARC) layer to provide a PR / BARC stack. In other instances, patterned PR layer 240 may be or include a DUV stack, the DUV stack including a PR layer below a BARC layer below a dielectric anti-reflective coating (DARC) layer to provide a PR / BARC / DARC stack. In some embodiments, as shown in FIG. 2B, feature 242 is etched completely through the thickness of the silicon-containing hard mask 230. The silicon-containing hard mask 230 can be or include silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In one or more instances, the silicon-containing hard mask 230 can be etched or otherwise removed by exposing the silicon-containing hard mask 230 to one or more fluorocarbon etchants and one or more processing gases. The fluorocarbon etchants can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The processing gases can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. In some instances, as shown in FIG. 2B, feature 242 is etched at least partially or completely through the thickness of the carbon hard mask layer 210. The carbon hard mask layer 210 can be or include any type of carbon hard mask (including the carbon hard mask 110 described and discussed above). In one or more instances, the carbon hard mask layer 210 can be etched or otherwise removed by exposing the carbon hard mask layer 210 to one or more etchant gases and one or more passivation gases. The etchant gases can be or include argon, oxygen, or a combination thereof, and the passivation gases can be or include methane, sulfur dioxide, carbonyl sulfide, or any combination thereof. FIGS. 2B to 2C illustrate the processing or transformation of the carbon hard mask layer 210 (FIG. 2B) to produce an alumina-carbon hybrid hard mask 220 (FIG. 2C) via SIS processing. The SIS processing is selective for the carbon hard mask layer 210 while not reacting or substantially not reacting with other exposed surfaces and layers on the workpiece 200 (e.g., the underlying layer 204, the silicon-containing hard mask 230, and the patterned PR layer 240). The alumina-carbon hybrid hard mask 220 is denser than the carbon hard mask layer 210. The alumina-carbon hybrid hard mask 220 can have the composition and properties of the alumina-carbon hybrid hard mask 120 described and discussed above. In some instances, feature 242 is etched at least partially or completely through the thickness of the underlying layer 204. As shown in FIG. 2D, feature 242 is only partially etched into the thickness of the underlying layer 204. The underlying layer 204 can be partially etched by exposing the underlying layer 204 to one or more fluorocarbon etchants and one or more processing gases. The fluorocarbon etchants can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The processing gases can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. The alumina-carbon hybrid hard mask 220 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 220 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 220 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of oxygen contained in the alumina-carbon hybrid hard mask 220 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 220 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of carbon contained in the alumina-carbon hybrid hard mask 220 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 220 can be from about 40 at% to about 90 at%, from about 50 at% to about 90 at%, from about 60 at% to about 90 at%, from about 70 at% to about 90 at%, from about 80 at% to about 90 at%, from about 40 at% to about 75 at%, from about 50 at% to about 75 at%, from about 60 at% to about 75 at%, from about 70 at% to about 75 at%, from about 40 at% to about 60 at%, from about 45 at% to about 60 at%, from about 50 at% to about 60 at%, or from about 55 at% to about 60 at%. In one or more instances, the alumina-carbon hybrid hard mask 220 can include from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and from about 50 at% to about 90 at% carbon. In some instances, the alumina-carbon hybrid hard mask 220 can include from about 10 at% to about 20 at% aluminum, from about 10 at% to about 30 at% oxygen, and from about 50 at% to about 80 at% carbon. In one or more instances, the alumina-carbon hybrid hard mask 220 can include from about 5 at% to about 10 at% aluminum, from about 5 at% to about 20 at% oxygen, and from about 70 at% to about 90 at% carbon. The thickness of the alumina-carbon hybrid hard mask 220 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As shown in FIG. 2D, the alumina-carbon hybrid hard mask 220 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of feature 242. The height of the feature pattern or feature 242 can be the same as or less than the thickness of the alumina-carbon hybrid hard mask 220. Thus, the range of the height of the feature pattern or feature 242 can be from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The feature pattern or feature 242 of the patterned layer or the alumina-carbon hybrid hard mask 220 is separated by vias, gaps, or spaces, and the vias, gaps, or spaces can have a width of from about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The feature pattern or feature 242 can have an aspect ratio of from about 20 to about 500, from about 30 to about 300, or from about 40 to about 200. Figures 3A to 3F illustrate cross-sectional views of workpiece 300 at different stages of a process for fabricating or otherwise forming a device as described and discussed in one or more embodiments herein. The device may be or include a memory device, a logic device, a microelectronic device, and / or other devices. In one or more embodiments, a method for forming or otherwise fabricating a device is provided, the method comprising the steps of: positioning workpiece 300 within a processing region of a processing chamber, wherein workpiece 300 comprises a metal or metal nitride layer 304 disposed on or above a substrate 302, a silicon-containing hard mask 330 disposed on or above metal or metal nitride layer 304, and a patterned photoresist (PR) layer 340 having a feature pattern with features 342 disposed on silicon-containing hard mask 330. The method further comprises the steps of: etching silicon-containing hard mask 330 to have the feature pattern of features 342 of patterned PR layer 340; removing patterned PR layer 340 from silicon-containing hard mask 330; and depositing a carbon hard mask layer 310 at least into features 342 of patterned PR layer 340. The method also comprises the steps of: processing carbon hard mask layer 310 by exposing workpiece 300 to an SIS process to produce an alumina-carbon hybrid hard mask 320 that is denser than carbon hard mask layer 310; and etching silicon-containing hard mask 330 to produce an inverse pattern 332 within alumina-carbon hybrid hard mask 320. As shown in Figure 3A, patterned PR layer 340 may be deposited, formed, positioned, or otherwise disposed on silicon-containing hard mask 330. In one or more embodiments, patterned PR layer 340 may be produced or otherwise formed by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing. In one or more instances, patterned PR layer 340 may be or include an EUV stack that includes a PR layer below a bottom anti-reflective coating (BARC) layer to provide a PR / BARC stack. In other instances, patterned PR layer 340 may be or include a DUV stack that includes a PR layer below a BARC layer below a dielectric anti-reflective coating (DARC) layer to provide a PR / BARC / DARC stack. Metal or metal nitride layer 304 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. Metal or metal nitride layer 304 may be or include a stack disposed on or above substrate 302. In one or more instances, the stack comprises alternating silicon oxide layers and silicon nitride layers. Substrate 302 may be or include any type of substrate (including substrate 102 described and discussed above). In some instances, the metal or metal nitride layer 304 may be or include one or more metal layers. In one or more instances, the metal layer may be or include an alloy of titanium metal, tantalum metal, tungsten metal, or any combination thereof. In other instances, the metal or metal nitride layer 304 may be or include a metal nitride layer, and the metal nitride layer may be or include an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. In some instances, the metal or metal nitride layer 304 may be or include any type of one or more layers (including the underlying layer 104 described and discussed above). In some embodiments, as shown in FIG. 3B, the feature 342 is etched completely through the thickness of the silicon-containing hard mask 330. Thereafter, the patterned PR layer 340 may be removed from the workpiece 300. The silicon-containing hard mask 330 may be or include silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In one or more instances, the silicon-containing hard mask 330 may be or include any type of hard mask (including the silicon-containing hard mask 230 described and discussed above). In some instances, the silicon-containing hard mask 330 may be etched or otherwise removed by exposing the silicon-containing hard mask 330 to one or more fluorocarbon etchants and one or more process gases. The fluorocarbon etchant may be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The process gas may be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. In one or more embodiments, the patterned PR layer 340 may be derived from the silicon-containing hard mask 330 (including exposing the patterned PR layer 340 to an etching process). In some instances, the etching process includes exposing the patterned PR layer 340 to a combination of one or more halogen-containing compounds and at least one of oxygen (O 2 ), argon, helium, or a combination thereof. The halogen-containing compound may be or include chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof. In other embodiments, the patterned PR layer 340 may be removed from the silicon-containing hard mask 330 by exposing the patterned PR layer 340 to a polishing process. The polishing process may be a chemical mechanical polishing (CMP) process. As shown in FIG. 3C, a carbon hard mask layer 310 can be deposited or otherwise formed on the upper surface of the patterned PR layer 340 while depositing the carbon hard mask layer 310 into the feature pattern of the features 342 of the patterned PR layer 340. The carbon hard mask layer 310 can have the composition and properties of the carbon hard mask layer 110 as described and discussed above, and can be deposited or otherwise formed by the same processes as the carbon hard mask layer 110 as described and discussed above. As shown in FIG. 3D, the carbon hard mask layer 310 can be removed from the upper surface of the patterned PR layer 340 before processing the carbon hard mask layer 310 using SIS processing. In one or more instances, removing the carbon hard mask layer 310 from the upper surface of the patterned PR layer 340 includes a polishing process (e.g., CMP). FIGS. 3D to 3E illustrate the processing or transformation of the carbon hard mask layer 310 (FIG. 3D) to produce an alumina carbon hybrid hard mask 320 (FIG. 3E) via SIS processing. The SIS processing is selective for the carbon hard mask layer 310 while not reacting or substantially not reacting with other exposed surfaces and layers (e.g., the metal or metal nitride layer 304 and the silicon-containing hard mask 330 on the workpiece 300). The alumina carbon hybrid hard mask 320 is denser than the carbon hard mask layer 310. The alumina carbon hybrid hard mask 320 can have the composition and properties of the alumina carbon hybrid hard mask 120 as described and discussed above. In one or more embodiments, as shown in FIG. 3F, the silicon-containing hard mask 330 can be etched or otherwise removed to create an inverse pattern 332 within the alumina carbon hybrid hard mask 320. In one or more instances, the silicon-containing hard mask 330 can be etched by exposing the workpiece 300 to inductively coupled plasma (ICP) to remove the silicon-containing hard mask 330 while maintaining the alumina carbon hybrid hard mask 320 on the metal or nitride layer 304. In some instances, the ICP comprises a mixture of oxygen (O 2 ) and argon or can be formed by a mixture of oxygen (O 2 ) and argon. In other embodiments, the silicon-containing hard mask 330 can be etched or otherwise removed by other processes to create an inverse pattern 332 within the alumina carbon hybrid hard mask 320. The workpiece 300 can be exposed to a selective removal process or a wet etching process to remove the silicon-containing hard mask 330 while maintaining the alumina carbon hybrid hard mask 320 on the metal or metal nitride layer 304. The alumina-carbon hybrid hard mask 320 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 320 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 320 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of oxygen contained in the alumina-carbon hybrid hard mask 320 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 320 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of carbon contained in the alumina-carbon hybrid hard mask 320 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 320 can be about 40 at% to about 90 at%, about 50 at% to about 90 at%, about 60 at% to about 90 at%, about 70 at% to about 90 at%, about 80 at% to about 90 at%, about 40 at% to about 75 at%, about 50 at% to about 75 at%, about 60 at% to about 75 at%, about 70 at% to about 75 at%, about 40 at% to about 60 at%, about 45 at% to about 60 at%, about 50 at% to about 60 at%, or about 55 at% to about 60 at%. In one or more instances, the alumina-carbon hybrid hard mask 320 can include about 5 at% to about 20 at% aluminum, about 5 at% to about 30 at% oxygen, and about 50 at% to about 90 at% carbon. In some instances, the alumina-carbon hybrid hard mask 320 can include about 10 at% to about 20 at% aluminum, about 10 at% to about 30 at% oxygen, and about 50 at% to about 80 at% carbon. In one or more instances, the alumina-carbon hybrid hard mask 320 can include about 5 at% to about 10 at% aluminum, about 5 at% to about 20 at% oxygen, and about 70 at% to about 90 at% carbon. The thickness of the alumina-carbon hybrid hard mask 320 ranges from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. As shown in FIG. 3F, the alumina-carbon hybrid hard mask 320 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of the feature 342. The height of the feature pattern or the feature 342 can be the same as or less than the thickness of the alumina-carbon hybrid hard mask 320. Thus, the range of the height of the feature pattern or the feature 342 can be about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. The feature pattern or the feature 342 of the patterned layer or the alumina-carbon hybrid hard mask 320 is separated by vias, gaps, or spaces, and the vias, gaps, or spaces can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The feature pattern or the feature 342 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200. Figures 4A-4G illustrate cross-sectional views of workpiece 400 at different stages of a process for fabricating or otherwise forming a device as described and discussed in one or more embodiments herein. The device may be or include a memory device, a logic device, a microelectronic device, and / or other devices. In one or more embodiments, a method for forming or otherwise producing a device is provided, the method comprising the steps of: positioning workpiece 400 within a processing region of a processing chamber, wherein workpiece 400 includes a metal or metal nitride layer 404 disposed on or above a substrate 402, a silicon-containing hard mask 430 disposed on or above metal or metal nitride layer 404, and a patterned photoresist (PR) layer 440 having a feature pattern with features 442 disposed on silicon-containing hard mask 430. The method also includes the steps of: etching silicon-containing hard mask 430 to have a feature pattern of features 442 of patterned PR layer 440; removing patterned PR layer 440 from silicon-containing hard mask 430; and depositing a carbon hard mask layer 410 into features 442 of patterned PR layer 440 and onto an upper surface of patterned PR layer 440. The method further includes the steps of: depositing a photoresist anti-reflective coating (PR-ARC) layer 450 on a first portion of carbon hard mask layer 410 while leaving a second portion of carbon hard mask layer 410 exposed. Additionally, the method includes the steps of: etching the second portion of carbon hard mask layer 410 during a first mask etching process while maintaining PR-ARC layer 450 and the first portion of carbon hard mask layer 410 on workpiece 400; and etching PR-ARC layer 450 during a second mask etching process while maintaining the first portion of carbon hard mask layer 410 on workpiece 400. The method further includes the steps of: processing the first portion of carbon hard mask layer 410 by exposing workpiece 400 to a SIS process to produce an alumina-carbon hybrid hard mask 420 that is denser than carbon hard mask layer 410. As shown in FIG. 4A, patterned PR layer 440 may be deposited, formed, positioned, or otherwise disposed on silicon-containing hard mask 430. In one or more embodiments, patterned PR layer 440 may be produced or otherwise formed by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing. In one or more examples, patterned PR layer 440 may be or include an EUV stack that includes a PR layer below a bottom anti-reflective coating (BARC) layer to provide a PR / BARC stack. In other examples, patterned PR layer 440 may be or include a DUV stack that includes a PR layer below a BARC layer below a dielectric anti-reflective coating (DARC) layer to provide a PR / BARC / DARC stack. The metal or metal nitride layer 404 can be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. The metal or metal nitride layer 404 can be or include a stack disposed on or above the substrate 402. In one or more instances, the stack includes alternating silicon oxide layers and silicon nitride layers. The substrate 402 can be or include any type of substrate (including the substrate 102 described and discussed above). In some instances, the metal or metal nitride layer 404 can be or include one or more metal layers. In one or more instances, the metal layer can be or include an alloy of titanium metal, tantalum metal, tungsten metal, or any combination thereof. In other instances, the metal or metal nitride layer 404 can be or include a metal nitride layer, and the metal nitride layer can be or include an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. In some instances, the metal or metal nitride layer 404 can be or include any type of one or more layers (including the underlying layer 104 and / or the metal or metal nitride layer 304 described and discussed above). In some embodiments, as shown in FIG. 4B, the feature 442 is etched completely through the thickness of the silicon-containing hard mask 430. Thereafter, the patterned PR layer 440 can be removed from the workpiece 400. The silicon-containing hard mask 430 can be or include silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In one or more instances, the silicon-containing hard mask 430 can be or include any type of hard mask (including the silicon-containing hard mask 230 described and discussed above). In some instances, the silicon-containing hard mask 430 can be etched or otherwise removed by exposing the silicon-containing hard mask 430 to one or more fluorocarbon etchants and one or more processing gases. The fluorocarbon etchant can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The processing gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. In one or more embodiments, the patterned PR layer 440 can be derived from the silicon-containing hard mask 430 (including exposing the patterned PR layer 440 to an etching process). In some instances, the etching process includes exposing the patterned PR layer 440 to a combination of one or more halogen-containing compounds and at least one of oxygen (O 2 ), argon, helium, or a combination thereof. The halogen-containing compound can be or include a chloride (Cl 2), hydrogen bromide (HBr), or any combination thereof. In other embodiments, the patterned PR layer 440 can be removed from the silicon-containing hard mask 430 by exposing the patterned PR layer 440 to a polishing process. The polishing process can be a chemical mechanical polishing (CMP) process. As shown in FIG. 4C, a carbon hard mask layer 410 can be deposited or otherwise formed on the upper surface of the patterned PR layer 440 while depositing the carbon hard mask layer 410 into the features 442 of the patterned PR layer 440. The carbon hard mask layer 410 can have the composition and properties of the carbon hard mask layer 110 as described and discussed above, and can be deposited or otherwise formed by the same processes as the carbon hard mask layer 110 as described and discussed above. As shown in FIG. 4D, a photoresist anti-reflective coating (PR-ARC) layer 450 can be deposited, formed, or otherwise disposed on one or more first portions of the carbon hard mask layer 410 while leaving one or more second portions of the carbon hard mask layer 410 exposed. The PR-ARC layer 450 can be generated by EUV lithography processing and / or DUV lithography processing. In one or more instances, the PR-ARC layer 450 can be or include a photoresist layer, a bottom anti-reflective coating (BARC) layer, and a dielectric anti-reflective coating (DARC) layer. In other instances, the PR-ARC layer 450 can be or include a photoresist layer and a silicon-containing anti-reflective coating (SiARC) layer. As shown in FIG. 4E, during a first mask etching process, the second portion of the carbon hard mask layer 410 is etched or otherwise removed while maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400. In one or more instances, the first mask etching process includes exposing the workpiece 400 to ICP while removing the second portion of the carbon hard mask layer 410 and maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400. In some instances, the ICP contains a mixture of oxygen (O 2 ), and argon or can be formed by a mixture of oxygen (O 2 ), and argon. As shown in FIG. 4F, during a second mask etching process, the PR-ARC layer 450 is etched or otherwise removed while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400. The second mask etching process includes exposing the workpiece 400 to a selective removal process or a wet etching process to remove the PR-ARC layer 450 while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400. Figures 4F to 4G illustrate the processing or transformation of a carbon hard mask layer 410 (Figure 4F) into an alumina-carbon hybrid hard mask 420 (Figure 4G) via SIS treatment. The SIS treatment is selective for the carbon hard mask layer 410 and does not react or substantially does not react with other exposed surfaces and layers (e.g., the metal or metal nitride layer 404 and the silicon-containing hard mask 430 on the workpiece 400). The alumina-carbon hybrid hard mask 420 is denser than the carbon hard mask layer 410. The alumina-carbon hybrid hard mask 420 can have the composition and properties of the alumina-carbon hybrid hard mask 120 as described and discussed above. The alumina-carbon hybrid hard mask 420 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 420 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 420 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of oxygen contained in the alumina-carbon hybrid hard mask 420 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 420 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%. The range of carbon contained in the alumina-carbon hybrid hard mask 420 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 420 can be about 40 at% to about 90 at%, about 50 at% to about 90 at%, about 60 at% to about 90 at%, about 70 at% to about 90 at%, about 80 at% to about 90 at%, about 40 at% to about 75 at%, about 50 at% to about 75 at%, about 60 at% to about 75 at%, about 70 at% to about 75 at%, about 40 at% to about 60 at%, about 45 at% to about 60 at%, about 50 at% to about 60 at%, or about 55 at% to about 60 at%. In one or more instances, the alumina-carbon hybrid hard mask 420 may comprise from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and from about 50 at% to about 90 at% carbon. In some instances, the alumina-carbon hybrid hard mask 420 may comprise from about 10 at% to about 20 at% aluminum, from about 10 at% to about 30 at% oxygen, and from about 50 at% to about 80 at% carbon. In one or more instances, the alumina-carbon hybrid hard mask 420 may comprise from about 5 at% to about 10 at% aluminum, from about 5 at% to about 20 at% oxygen, and from about 70 at% to about 90 at% carbon. The thickness of the alumina-carbon hybrid hard mask 420 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As shown in FIG. 4G, the alumina-carbon hybrid hard mask 420 may be a patterned layer or include a patterned layer that includes a feature pattern of the feature 442. The height of the feature pattern or the feature 442 may be the same as or less than the thickness of the alumina-carbon hybrid hard mask 420. Thus, the height of the feature pattern or the feature 442 may range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The feature pattern or the feature 442 of the patterned layer or the alumina-carbon hybrid hard mask 420 is separated by vias, gaps, or spaces, and the vias, gaps, or spaces may have a width of from about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The feature pattern or the feature 442 may have an aspect ratio of from about 20 to about 500, from about 30 to about 300, or from about 40 to about 200. Most conventional chemical vapor deposition (CVD) chambers or atomic layer deposition (ALD) chambers can serve as processing chambers suitable for performing the SIS processes described and discussed herein. An example of a processing chamber that may be suitable for benefiting from the SIS process is the CENTRIS ® Sym3™ etch processing chamber, which can be commercially obtained from Applied Materials, Inc. Examples of tools or systems that benefit from the SIS process are the Centura ® system with an iSprint™ ALD / CVD SSW chamber and the Endura ® system, both of which can be commercially obtained from Applied Materials, Inc. Embodiments of the present disclosure further relate to any one or more of the following Examples 1-185. Example 1: A method for processing a carbon hard mask layer, comprising the following steps: positioning a workpiece in a processing area of a processing chamber, wherein the workpiece includes a carbon hard mask layer disposed on or above a bottom layer; and processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer, wherein the SIS process includes one or more infiltration cycles, and each of the infiltration cycles includes: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores included in the carbon hard mask layer; purifying the processing area to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores included in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing area to remove gaseous residues containing the oxidant. Example 2: The method according to Example 1, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm. Example 3: The method according to Example 1 or 2, wherein the carbon hard mask layer is a patterned layer. Example 4: The method according to any one of Examples 1-3, wherein the patterned layer includes features having a height of about 1 μm to about 20 μm. Example 5: The method according to any one of Examples 1-4, wherein the patterned layer includes features separated by through holes, gaps, or spaces having a width of about 5 nm to about 250 nm. Example 6: The method according to any one of Examples 1-5, wherein the patterned layer includes features having an aspect ratio of about 20 to about 500. Example 7: The method according to any one of Examples 1-6, wherein the carbon hard mask layer includes a carbon-containing material having polar functional groups, and wherein the alumina coating is disposed on the inner surface having polar functional groups. Example 8: The method according to Example 7, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof. Example 9: The method according to any one of Examples 1-8, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) processing, plasma enhanced CVD (PE-CVD) processing, flowable CVD (FCVD) processing, or spin coating processing. Example 10: The method according to any one of Examples 1-9, wherein the carbon hard mask layer includes about 30 atomic percent (at%) to about 80 at% of carbon, about 10 at% to about 50 at% of hydrogen, and about 10 at% to about 20 at% of oxygen. Example 11: The method according to any one of Examples 1-10, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen. Example 12: The method according to any one of Examples 1-11, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon. Example 13: The method according to any one of Examples 1-12, wherein the bottom layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. Example 14: The method according to any one of Examples 1-13, wherein the bottom layer comprises a stack disposed on or above the substrate. Example 15: The method according to Example 14, wherein the stack comprises alternating layers of silicon oxide and silicon nitride. Example 16: The method according to any one of Examples 1-15, wherein the aluminum precursor comprises an alkylaluminum compound. Example 17: The method according to any one of Examples 1-16, wherein the oxidizing agent comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof. Example 18: The method according to any one of Examples 1-17, wherein the aluminum precursor comprises trimethylaluminum and the oxidizing agent comprises water. Example 19: The method according to any one of Examples 1-18, wherein during the SIS process, the infiltration cycle is repeated from 2 times to about 50 times. Example 20: The method according to any one of Examples 1-19, wherein during the SIS process, the processing area of the processing chamber is at a pressure of from about 0.01 Torr to about 250 Torr. Example 21: The method according to any one of Examples 1-20, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor. Example 22: The method according to any one of Examples 1-21, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing the aluminum precursor. Example 23: The method according to any one of Examples 1-22, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidizing agent for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidizing agent. Example 24: The method according to any one of Examples 1-23, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purifying gas for about 1 minute to about 30 minutes while purifying the processing area to remove gaseous residues containing an oxidant. Example 25: A method of forming a device, comprising the steps of: positioning a workpiece in a processing area of a processing chamber, wherein the workpiece comprises: a carbon hard mask layer disposed on or above a bottom layer; a silicon-containing hard mask disposed on or above the carbon hard mask layer; and a patterned photoresist layer having a characteristic pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask layer and the carbon hard mask layer to respectively have the characteristic pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to sequential infiltration synthesis (SIS) processing to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the bottom layer to have the characteristic pattern of the patterned photoresist layer. Example 26: The method according to Example 25, wherein the SIS processing comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purifying the processing area to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing area to remove gaseous residues containing the oxidant. Example 27: The method according to Example 25 or 26, wherein the aluminum precursor comprises an alkylaluminum compound. Example 28: The method according to any one of Examples 25-27, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof. Example 29: The method according to any one of Examples 25-28, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water. Example 30: The method according to any one of Examples 25-29, wherein during the SIS processing, the infiltration cycle is repeated 2 to about 50 times. Example 31: The method according to any one of Examples 25-30, wherein during the SIS processing, the processing area of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr. Example 32: The method according to any one of Examples 25-31, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor. Example 33: The method according to any one of Examples 25-32, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purifying gas for about 1 minute to about 30 minutes while purifying the processing area to remove gaseous residues containing aluminum precursors. Example 34: The method according to any one of Examples 25-33, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant. Example 35: The method according to any one of Examples 25-34, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purifying gas for about 1 minute to about 30 minutes while purifying the processing area to remove gaseous residues containing the oxidant. Example 36: The method according to any one of Examples 25-35, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography or deep ultraviolet (DUV) lithography. Example 37: The method according to any one of Examples 25-36, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. Example 38: The method according to any one of Examples 25-37, wherein the device is a memory device, a logic device, or a microelectronic device. Example 39: The method according to any one of Examples 25-38, wherein the feature pattern is etched completely through the thickness of the silicon-containing hard mask. Example 40: The method according to any one of Examples 25-39, wherein the step of etching the silicon-containing hard mask further comprises the step of exposing the silicon-containing hard mask to a carbon fluoride etchant and a processing gas. Example 41: The method according to Example 40, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. Example 42: The method according to any one of Examples 25-41, wherein the feature pattern is etched completely through the thickness of the carbon hard mask layer. Example 43: The method according to any one of Examples 25-42, wherein the step of etching the carbon hard mask layer further comprises the step of exposing the carbon hard mask layer to an etchant gas and a passivation gas. Example 44: The method according to Example 43, wherein the etchant gas comprises argon, oxygen, or a combination thereof, and the passivation gas comprises methane, sulfur dioxide, carbonyl sulfide, or any combination thereof. Example 45: The method according to any one of Examples 25-44, wherein the feature pattern is partially etched into the thickness of the underlying layer. Example 46: The method according to any one of Examples 25-45, wherein the step of partially etching the underlying layer further comprises the step of exposing the underlying layer to a fluorocarbon etchant and a processing gas. Example 47: The method according to Example 46, wherein the fluorocarbon etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. Example 48: The method according to any one of Examples 25-47, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm. Example 49: The method according to any one of Examples 25-48, wherein the carbon hard mask layer is a patterned layer. Example 50: The method according to any one of Examples 25-49, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm. Example 51: The method according to any one of Examples 25-50, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm. Example 52: The method according to any one of Examples 25-51, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500. Example 53: The method according to any one of Examples 25-52, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is provided on the inner surface having polar functional groups. Example 54: The method according to Example 53, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof. Example 55: The method according to any one of Examples 25-54, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) processing, plasma enhanced CVD (PE-CVD) processing, flowable CVD (FCVD) processing, or spin coating processing. Example 56: The method according to any one of Examples 25-55, wherein the carbon hard mask layer comprises from about 30 atomic percent (at%) to about 80 at% carbon, from about 10 at% to about 50 at% hydrogen, and from about 10 at% to about 20 at% oxygen. Example 57: The method according to any one of Examples 25-56, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen. Example 58: The method according to any one of Examples 25-57, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon. Example 59: The method according to any one of Examples 25-58, wherein the bottom layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. Example 60: The method according to any one of Examples 25-59, wherein the bottom layer comprises a stack disposed on or above the substrate. Example 61: The method according to Example 60, wherein the stack comprises alternating layers of silicon oxide and silicon nitride. Example 62: A method of forming a device, comprising the steps of: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing at least a carbon hard mask layer into the feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the silicon-containing hard mask to produce a reverse pattern in the alumina-carbon hybrid hard mask. Example 63: The method according to Example 62, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purifying the processing region to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing region to remove gaseous residues containing the oxidant. Example 64: The method according to Example 62 or 63, wherein the aluminum precursor comprises an alkyl aluminum compound. Example 65: The method according to any one of Examples 62 - 64, wherein the oxidizing agent comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof. Example 66: The method according to any one of Examples 62 - 65, wherein the aluminum precursor comprises trimethylaluminum and the oxidizing agent comprises water. Example 67: The method according to any one of Examples 62 - 66, wherein during the SIS process, the infiltration cycle is repeated from 2 to about 50 times. Example 68: The method according to any one of Examples 62 - 67, wherein during the SIS process, the processing area of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr. Example 69: The method according to any one of Examples 62 - 68, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor. Example 70: The method according to any one of Examples 62 - 69, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residues containing the aluminum precursor. Example 71: The method according to any one of Examples 62 - 70, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidizing agent for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidizing agent. Example 72: The method according to any one of Examples 62 - 71, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residues containing the oxidizing agent. Example 73: The method according to any one of Examples 62 - 72, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography or deep ultraviolet (DUV) lithography. Example 74: The method according to any one of Examples 62 - 73, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. Example 75: The method according to any one of Examples 62 - 74, wherein the device is a memory device, a logic device, or a microelectronic device. Example 76: The method according to any one of Examples 62 - 75, wherein the feature pattern is completely etched through the thickness of the silicon-containing hard mask. Example 77: The method according to any one of Examples 62 - 76, wherein the step of etching the silicon-containing hard mask further comprises the steps of: exposing the silicon-containing hard mask to a fluorocarbon etchant and a processing gas. Example 78: The method according to Example 77, wherein the fluorocarbon etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. Example 79: The method according to any one of Examples 62 - 78, wherein the step of removing the patterned photoresist layer from the silicon-containing hard mask comprises the steps of: exposing the patterned photoresist layer to an etching treatment. Example 80: The method according to Example 79, wherein the etching treatment comprises exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O 2 ), argon, helium, or a combination thereof. Example 81: The method according to Example 80, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof. Example 82: The method according to any one of Examples 62 - 81, wherein the step of removing the patterned photoresist layer from the silicon-containing hard mask comprises the steps of: exposing the patterned photoresist layer to a polishing treatment. Example 83: The method according to Example 82, wherein the polishing treatment comprises a chemical mechanical polishing (CMP) treatment. Example 84: The method according to any one of Examples 62 - 83, further comprising the steps of: depositing a carbon hard mask layer onto the upper surface of the patterned photoresist layer while depositing the carbon hard mask layer into the feature pattern of the patterned photoresist layer. Example 85: The method according to Example 84, further comprising the steps of: removing the carbon hard mask layer from the upper surface of the patterned photoresist layer before processing the carbon hard mask layer using SIS treatment. Example 86: The method according to Example 85, wherein the step of removing the carbon hard mask layer from the upper surface of the patterned photoresist layer comprises a polishing treatment. Example 87: The method according to any one of Examples 62 - 86, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm. Example 88: The method according to any one of Examples 62 - 87, wherein the carbon hard mask layer is a patterned layer. Example 89: The method according to Example 88, wherein the patterned layer comprises features having a height of from about 1 μm to about 20 μm. Example 90: The method according to Example 88 or 89, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of from about 5 nm to about 250 nm. Example 91: The method according to any one of Examples 88 - 90, wherein the patterned layer comprises features having an aspect ratio of from about 20 to about 500. Example 92: The method according to any one of Examples 62 - 91, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is disposed on the inner surface having polar functional groups. Example 93: The method according to Example 92, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof. Example 94: The method according to any one of Examples 62 - 93, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) process, plasma enhanced CVD (PE-CVD) process, flowable CVD (FCVD) process, or spin coating process. Example 95: The method according to any one of Examples 62 - 94, wherein the carbon hard mask layer comprises from about 30 atomic percent (at%) to about 80 at% of carbon, from about 10 at% to about 50 at% of hydrogen, and from about 10 at% to about 20 at% of oxygen. Example 96: The method according to any one of Examples 62 - 95, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% of aluminum and from about 5 at% to about 30 at% of oxygen. Example 97: The method according to any one of Examples 62 - 96, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% of carbon. Example 98: The method according to any one of Examples 62 - 97, wherein the step of etching the silicon-containing hard mask to produce a reverse pattern in the alumina-carbon hybrid hard mask further comprises the step of exposing the workpiece to inductively coupled plasma (ICP) to remove the silicon-containing hard mask while maintaining the alumina-carbon hybrid hard mask on the metal or metal nitride layer. Example 99: The method according to Example 98, wherein the ICP comprises a mixture of oxygen (O 2 ) and argon. Example 100: The method according to any one of Examples 62-99, wherein the step of etching the silicon-containing hard mask to generate a reverse pattern within the alumina-carbon hybrid hard mask further comprises the steps of: exposing the workpiece to a selective removal process or a wet etching process to remove the silicon-containing hard mask while maintaining the alumina-carbon hybrid hard mask on the metal or metal nitride layer. Example 101: The method according to any one of Examples 62-100, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof. Example 102: The method according to any one of Examples 62-101, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. Example 103: A method of forming a device, comprising the steps of: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; and a patterned photoresist layer having a characteristic pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the characteristic pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing a carbon hard mask layer into the characteristic pattern of the patterned photoresist layer and onto the upper surface of the patterned photoresist layer; depositing a photoresist anti-reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while exposing a second portion of the carbon hard mask layer; during a first mask etching process, etching the second portion of the carbon hard mask layer while maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece; during a second mask etching process, etching the PR-ARC layer while maintaining the first portion of the carbon hard mask layer on the workpiece; and processing the first portion of the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer. Example 104: The method according to Example 103, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained within the carbon hard mask layer; purifying the processing region to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidizing agent; infiltrating the carbon hard mask layer with the oxidizing agent through pores contained within the carbon hard mask layer to produce an alumina coating disposed on the inner surface of the carbon hard mask layer; and purifying the processing region to remove gaseous residues containing the oxidizing agent. Example 105: The method according to Example 103 or 104, wherein the aluminum precursor comprises an alkyl aluminum compound. Example 106: The method according to any one of Examples 103-105, wherein the oxidizing agent comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof. Example 107: The method according to any one of Examples 103-106, wherein the aluminum precursor comprises trimethylaluminum and the oxidizing agent comprises water. Example 108: The method according to any one of Examples 103-107, wherein during the SIS process, the infiltration cycle is repeated 2 to about 50 times. Example 109: The method according to any one of Examples 103-108, wherein during the SIS process, the processing area of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr. Example 110: The method according to any one of Examples 103-109, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor. Example 111: The method according to any one of Examples 103-110, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residues containing the aluminum precursor. Example 112: The method according to any one of Examples 103-111, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidizing agent for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidizing agent. Example 113: The method according to any one of Examples 103-112, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residues containing the oxidizing agent. Example 114: The method according to any one of Examples 103-113, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography or deep ultraviolet (DUV) lithography. Example 115: The method according to any one of Examples 103-114, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. Example 116: The method according to any one of Examples 103-115, wherein the device is a memory device, a logic device, or a microelectronic device. Example 117: The method according to any one of Examples 103-116, wherein the feature pattern is completely etched through the thickness of the silicon-containing hard mask. Example 118: The method according to any one of Examples 103-117, wherein the step of etching the silicon-containing hard mask further comprises the steps of: exposing the silicon-containing hard mask to a fluorocarbon etchant and a processing gas. Example 119: The method according to Example 118, wherein the fluorocarbon etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof. Example 120: The method according to any one of Examples 103-119, wherein the step of removing the patterned photoresist layer from the silicon-containing hard mask comprises the steps of: exposing the patterned photoresist layer to an etching process. Example 121: The method according to Example 120, wherein the etching process comprises exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O 2 ), argon, helium, or a combination thereof. Example 122: The method according to Example 121, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof. Example 123: The method according to any one of Examples 103-122, wherein the step of removing the patterned photoresist layer from the silicon-containing hard mask comprises the steps of: exposing the patterned photoresist layer to a polishing process. Example 124: The method according to Example 123, wherein the polishing process comprises a chemical mechanical polishing (CMP) process. Example 125: The method according to any one of Examples 103-124, wherein the first mask etching process comprises exposing the workpiece to inductively coupled plasma (ICP), while removing a second portion of the carbon hard mask layer and maintaining the first portion of the PR-ARC layer and the carbon hard mask layer on the workpiece. Example 126: The method according to Example 125, wherein the ICP comprises a mixture of oxygen (O 2 ) and argon. Example 127: The method according to any one of Examples 103-126, wherein the second mask etching process comprises exposing the workpiece to a selective removal process or a wet etching process to remove the PR-ARC layer while maintaining the first portion of the carbon hard mask layer on the workpiece. Example 128: The method according to any one of Examples 103-127, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm. Example 129: The method according to any one of Examples 103-128, wherein the carbon hard mask layer is a patterned layer. Example 130: The method according to Example 129, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm. Example 131: The method according to Example 129 or 130, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm. Example 132: The method according to any one of Examples 129-131, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500. Example 133: The method according to any one of Examples 103-132, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is disposed on an inner surface having polar functional groups. Example 134: The method according to Example 133, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof. Example 135: The method according to any one of Examples 103-134, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) treatment, plasma enhanced CVD (PE-CVD) treatment, flowable CVD (FCVD) treatment, or spin coating treatment. Example 136: The method according to any one of Examples 103-135, wherein the carbon hard mask layer comprises about 30 atomic percent (at%) to about 80 at% carbon, about 10 at% to about 50 at% hydrogen, and about 10 at% to about 20 at% oxygen. Example 137: The method according to any one of Examples 103-136, wherein the alumina-carbon mixed hard mask comprises about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen. Example 138: The method according to any one of Examples 103-137, wherein the alumina-carbon mixed hard mask further comprises about 50 at% to about 90 at% carbon. Example 139: The method according to any one of Examples 103-138, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof. Example 140: The method according to any one of Examples 103 - 139, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises titanium nitride, tantalum nitride, tungsten nitride, an alloy of any combination thereof. Example 141: The method according to any one of Examples 103 - 140, wherein the PR-ARC layer is generated by extreme ultraviolet (EUV) lithography. Example 142: The method according to any one of Examples 103 - 141, wherein the PR-ARC layer comprises a photoresist layer, a bottom anti-reflective coating (BARC) layer, and a dielectric anti-reflective coating (DARC) layer. Example 143: The method according to any one of Examples 103 - 142, wherein the PR-ARC layer comprises a photoresist layer and a silicon-containing anti-reflective coating (SiARC) layer. Example 144: A workpiece and / or device prepared, constructed, processed, or otherwise made by the method according to any one of Examples 1 - 143 and / or as shown in any one of the figures. Example 145: A workpiece and / or device, comprising: a bottom layer disposed on a substrate; and an alumina-carbon hybrid hard mask disposed on the bottom layer, wherein the alumina-carbon hybrid hard mask comprises features. Example 146: The workpiece and / or device according to Example 145, wherein the alumina-carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm. Example 147: The workpiece and / or device according to Example 145 or 146, wherein the alumina-carbon hybrid hard mask comprises features having a height of about 1 μm to about 20 μm. Example 148: The workpiece and / or device according to any one of Examples 145 - 147, wherein the alumina-carbon hybrid hard mask comprises features separated by through holes, gaps, or spaces having a width of about 5 nm to about 250 nm. Example 149: The workpiece and / or device according to any one of Examples 145 - 148, wherein the features have an aspect ratio of about 20 to about 500. Example 150: The workpiece and / or device according to any one of Examples 145 - 149, wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen. Example 151: The workpiece and / or device according to any one of Examples 145 - 150, wherein the alumina-carbon hybrid hard mask further comprises about 50 at% to about 90 at% carbon. Example 152: The workpiece and / or device according to any one of Examples 145-151, wherein the bottom layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopant, or any combination thereof. Example 153: The workpiece and / or device according to any one of Examples 145-152, wherein the bottom layer comprises a stack disposed on or above the substrate. Example 154: The workpiece and / or device according to Example 153, wherein the stack comprises alternating layers of silicon oxide and silicon nitride. Example 155: A workpiece and / or device, comprising: a bottom layer disposed on a substrate; an alumina-carbon hybrid hard mask disposed on the bottom layer; a silicon-containing hard mask disposed on the alumina-carbon hybrid hard mask; and a patterned photoresist (PR) layer disposed on the silicon-containing hard mask, wherein the feature extends at least through the alumina-carbon hybrid hard mask, the silicon-containing hard mask, and the patterned PR layer. Example 156: The workpiece and / or device according to Example 155, wherein the feature extends into at least a portion of the bottom layer. Example 157: The workpiece and / or device according to Example 155 or 156, wherein the alumina-carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm. Example 158: The workpiece and / or device according to any one of Examples 155-157, wherein the feature has a height of about 1 μm to about 20 μm. Example 159: The workpiece and / or device according to any one of Examples 155-158, wherein the features are separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm. Example 160: The workpiece and / or device according to any one of Examples 155-159, wherein the feature has an aspect ratio of about 20 to about 500. Example 161: The workpiece and / or device according to any one of Examples 155-160, wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen. Example 162: The workpiece and / or device according to any one of Examples 155-161, wherein the alumina-carbon hybrid hard mask further comprises about 50 at% to about 90 at% carbon. Example 163: The workpiece and / or device according to any one of Examples 155-162, wherein the bottom layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopant, or any combination thereof. Example 164: The workpiece and / or device according to any one of Examples 155-163, wherein the bottom layer comprises a stack disposed on or above the substrate. Example 165: The workpiece and / or device according to Example 164, wherein the stack comprises alternating silicon oxide layers and silicon nitride layers. Example 166: A workpiece and / or device comprising: a metal or metal nitride layer disposed on a substrate; and an alumina carbon hybrid hard mask disposed on the metal or metal nitride layer, wherein the alumina carbon hybrid hard mask comprises features. Example 167: The workpiece and / or device according to Example 166, wherein the alumina carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm. Example 168: The workpiece and / or device according to Example 166 or 167, wherein the alumina carbon hybrid hard mask comprises features having a height of about 1 μm to about 20 μm. Example 169: The workpiece and / or device according to any one of Examples 166 - 168, wherein the alumina carbon hybrid hard mask comprises features separated by through holes, gaps, or spaces having a width of about 5 nm to about 250 nm. Example 170: The workpiece and / or device according to any one of Examples 166 - 169, wherein the features have an aspect ratio of about 20 to about 500. Example 171: The workpiece and / or device according to any one of Examples 166 - 170, wherein the alumina carbon hybrid hard mask comprises about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen. Example 172: The workpiece and / or device according to any one of Examples 166 - 171, wherein the alumina carbon hybrid hard mask further comprises about 50 at% to about 90 at% carbon. Example 173: The workpiece and / or device according to any one of Examples 166 - 172, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof. Example 174: The workpiece and / or device according to any one of Examples 166 - 173, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. Example 175: A workpiece and / or device comprising: a metal or metal nitride layer disposed on a substrate; a silicon-containing hard mask disposed on the metal or metal nitride layer; and an alumina carbon hybrid hard mask disposed on the silicon-containing hard mask layer and the metal or metal nitride layer, wherein the alumina carbon hybrid hard mask comprises features. Example 176: The workpiece and / or device according to Example 175, wherein the alumina carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm. Example 177: The workpiece and / or device according to Example 175 or 176, wherein the alumina-carbon hybrid hard mask comprises features having a height of from about 1 μm to about 20 μm. Example 178: The workpiece and / or device according to any one of Examples 175-177, wherein the alumina-carbon hybrid hard mask comprises features separated by through holes, gaps, or spaces having a width of from about 5 nm to about 250 nm. Example 179: The workpiece and / or device according to any one of Examples 175-178, wherein the features have an aspect ratio of from about 20 to about 500. Example 180: The workpiece and / or device according to any one of Examples 175-179, wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen. Example 181: The workpiece and / or device according to any one of Examples 175-180, wherein the alumina-carbon hybrid hard mask further comprises about 50 at% to about 90 at% carbon. Example 182: The workpiece and / or device according to any one of Examples 175-181, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof. Example 183: The workpiece and / or device according to any one of Examples 175-182, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. Example 184: The workpiece and / or device according to any one of Examples 175-183, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. Example 185: The workpiece and / or device according to any one of Examples 144-184, wherein the device is a memory device, a logic device, or a microelectronic device. Although the foregoing relates to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims for patents. All documents described herein are incorporated herein by reference and include any priority documents and / or test procedures that are not inconsistent with the present disclosure. From the foregoing general description and specific examples, it can be seen that although the forms of the present disclosure have been illustrated and described, various modifications can be made without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure is not intended to be limiting. Similarly, in terms of patent law, the term "comprising" is considered synonymous with the term "including". Similarly, when a transitional term "comprising" precedes a composition, element, or group of elements, it should be understood that the same composition or group of elements having a transitional term "consisting essentially of", "consisting of", "selected from the group consisting of", or "is" precedes the description of the composition, element, or group of elements, and vice versa. As used herein, the term "about" refers to a variation of + / - 10% of the nominal value. It should be understood that such variations can be included in any value provided herein. A set of numerical upper limits and a set of numerical lower limits have been used to describe certain embodiments and features. It should be understood that unless otherwise stated, the range includes any combination of two values (e.g., any combination of any lower value and any higher value, any combination of any two lower values, and / or any combination of any two higher values). Certain lower limits, upper limits, and ranges appear in one or more of the following claims. 100: workpiece 102: substrate 104: bottom layer 110: carbon hard mask layer 112: feature 118: intermediate mask 120: alumina-carbon hybrid hard mask 200: workpiece 202: substrate 204: bottom layer 210: carbon hard mask layer 220: alumina-carbon hybrid hard mask 230: silicon-containing hard mask 240: patterned photoresist (PR) layer 242: feature 300: workpiece 302: substrate 304: metal nitride layer 310: carbon hard mask layer 320: alumina-carbon hybrid hard mask 330: silicon-containing hard mask 332: pattern 340: patterned photoresist (PR) layer 342: feature 400: workpiece 402: substrate 404: metal nitride layer 410: carbon hard mask layer 420: alumina-carbon hybrid hard mask 430: silicon-containing hard mask 440: patterned photoresist (PR) layer 442: feature 450: photoresist anti-reflective coating (PR-ARC) layer To enable the above features of the present disclosure to be understood in detail, a more specific description of the present disclosure (briefly summarized above) can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and are therefore not considered to limit their scope, and other equivalent embodiments can be adopted. Figures 1A to 1C illustrate cross-sectional views of a workpiece at different stages of a processing as described and discussed in one or more embodiments herein. Figures 2A to 2D illustrate cross-sectional views of another workpiece at different stages of a process for preparing or otherwise forming a device as described and discussed in one or more embodiments herein. Figures 3A to 3F illustrate cross-sectional views of another workpiece at different stages of a process for preparing or otherwise forming a device as described and discussed in one or more embodiments herein. Figures 4A to 4G illustrate cross-sectional views of another workpiece at different stages of a process for preparing or otherwise forming a device as described and discussed in one or more embodiments herein. For the sake of facilitating understanding, the same reference numerals are assigned to the same elements as much as possible in each figure. It is contemplated that the elements and features of one or more embodiments may be advantageously incorporated into other embodiments. Domestic deposit information (please note in the order of deposit institution, date, number) None Foreign deposit information (please note in the order of deposit country, institution, date, number) None 300: Workpiece 302: Substrate 304: Metal nitride layer 320: Alumina-carbon hybrid hard mask 332: Pattern

Claims

1. A method of forming an apparatus, comprising the steps of: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer, wherein the carbon hard mask layer comprises a carbon-containing material having one or more polar functional groups; The carbon hard mask layer is processed by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a denser alumina-carbon hybrid hard mask than the carbon hard mask layer; and the silicon-containing hard mask is etched to produce an opposite pattern within the alumina-carbon hybrid hard mask.

2. The method of claim 1, wherein the SIS process comprises one or more permeation cycles, and each of the permeation cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; permeating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purging the processing area to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; permeating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purging the processing area to remove gaseous residues containing the oxidant.

3. The method as described in request item 2, wherein: The aluminum precursor comprises an alkyl aluminum compound; the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof; and the permeation cycle is repeated 2 to approximately 50 times during the SIS treatment.

4. The method as described in request item 2, wherein: During the SIS process, the processing area of ​​the processing chamber is subjected to a pressure of approximately 0.01 Torr to approximately 250 Torr; during each of the permeation cycles, the carbon hard masking layer is exposed to the aluminum precursor for approximately 1 minute to approximately 10 minutes while the aluminum precursor permeates the carbon hard masking layer; during each of the permeation cycles, the carbon hard masking layer is exposed to a purge gas for approximately 1 minute to approximately 30 minutes while the processing area is purged to remove gaseous residues containing the aluminum precursor; during each of the permeation cycles, the carbon hard masking layer is exposed to the oxidant for approximately 1 minute to approximately 10 minutes while the oxidant permeates the carbon hard masking layer; and during each of the permeation cycles, the carbon hard masking layer is exposed to a purge gas for approximately 1 minute to approximately 30 minutes while the processing area is purged to remove gaseous residues containing the oxidant.

5. The method of claim 1, wherein the step of removing the patterned photoresist layer from the silicon-containing hard mask comprises the following steps: exposing the patterned photoresist layer to an etching process, the etching process comprising exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O2), argon, helium, or a combination thereof, wherein the halogen-containing compound comprises chloride (Cl2), hydrogen bromide (HBr), or any combination thereof.

6. The method of claim 1, further comprising the steps of: depositing the carbon hard mask layer onto the upper surface of the patterned photoresist layer, and simultaneously depositing the carbon hard mask layer into the feature pattern of the patterned photoresist layer; and removing the carbon hard mask layer from the upper surface of the patterned photoresist layer before processing the carbon hard mask layer using the SIS process, wherein the step of removing the carbon hard mask layer from the upper surface of the patterned photoresist layer includes a polishing process.

7. The method as described in request item 1, wherein: The carbon hard mask layer has a thickness of about 1 μm to about 20 μm; the carbon hard mask layer is a patterned layer; the patterned layer includes features with a height of about 1 μm to about 20 μm; the patterned layer includes features separated by vias, gaps, or spaces with a width of about 5 nm to about 250 nm; and the patterned layer includes features with an aspect ratio of about 20 to about 500.

8. The method as described in request item 2, wherein: The alumina coating is applied to an inner surface having the polar functional groups; and the polar functional groups include CH groups, CO groups, C=O groups, or any combination thereof.

9. The method of claim 1, wherein the carbon hard mask layer comprises about 30 atomic percent (at%) to about 80 at% of carbon, about 10 at% to about 50 at% of hydrogen, and about 10 at% to about 20 at% of oxygen; and wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% of aluminum, about 5 at% to about 30 at% of oxygen, and about 50 at% to about 90 at% of carbon.

10. The method of claim 1, wherein the step of etching the silicon-containing hard mask to produce the opposite pattern within the alumina-carbon hybrid hard mask further comprises the step of: exposing the workpiece to an inductively coupled plasma (ICP) to remove the silicon-containing hard mask while maintaining the alumina-carbon hybrid hard mask on the metal or metal nitride layer, wherein the ICP comprises a mixture of oxygen (O2) and argon.

11. A method of forming an apparatus, comprising the steps of: positioning a workpiece within a processing area of ​​a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto an upper surface of the patterned photoresist layer; depositing a photoimpedance reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while exposing a second portion of the carbon hard mask layer; during a first mask etching process, etching the second portion of the carbon hard mask layer while maintaining the PR-ARC layer on the workpiece and the first portion of the carbon hard mask layer; During a second masking etching process, the PR-ARC layer is etched while maintaining the first portion of the carbon hard masking layer on the workpiece; and the first portion of the carbon hard masking layer is processed by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a denser alumina-carbon hybrid hard masking layer than the carbon hard masking layer.

12. The method of claim 11, wherein the SIS process comprises one or more permeation cycles, and each of the permeation cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; permeating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purging the processing area to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; permeating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purging the processing area to remove gaseous residues containing the oxidant.

13. The method as described in request item 12, wherein: The aluminum precursor comprises an alkyl aluminum compound; the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof; and the permeation cycle is repeated 2 to approximately 50 times during the SIS treatment.

14. The method as described in request item 12, wherein: During the SIS process, the processing area of ​​the processing chamber is subjected to a pressure of approximately 0.01 Torr to approximately 250 Torr; during each of the permeation cycles, the carbon hard masking layer is exposed to the aluminum precursor for approximately 1 minute to approximately 10 minutes while the aluminum precursor permeates the carbon hard masking layer; during each of the permeation cycles, the carbon hard masking layer is exposed to a purge gas for approximately 1 minute to approximately 30 minutes while the processing area is purged to remove gaseous residues containing the aluminum precursor; during each of the permeation cycles, the carbon hard masking layer is exposed to the oxidant for approximately 1 minute to approximately 10 minutes while the oxidant permeates the carbon hard masking layer; and during each of the permeation cycles, the carbon hard masking layer is exposed to a purge gas for approximately 1 minute to approximately 30 minutes while the processing area is purged to remove gaseous residues containing the oxidant.

15. The method of claim 11, wherein the step of etching the silicon-containing hard mask further comprises the steps of: exposing the silicon-containing hard mask to a fluorocarbon etchant and a processing gas, wherein the fluorocarbon etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N2), oxygen (O2), or any combination thereof.

16. The method of claim 11, wherein the step of removing the patterned photoresist layer from the silicon-containing hard mask comprises the following steps: exposing the patterned photoresist layer to an etching process, the etching process comprising exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O2), argon, helium, or a combination thereof, wherein the halogen-containing compound comprises chloride (Cl2), hydrogen bromide (HBr), or any combination thereof.

17. The method of claim 11, wherein the first mask etching process includes exposing the workpiece to an inductively coupled plasma (ICP) while removing the second portion of the carbon hard mask layer and maintaining the PR-ARC layer on the workpiece and the first portion of the carbon hard mask layer, wherein the ICP comprises a mixture of oxygen (O2) and argon.

18. The method as described in request item 11, wherein: The carbon hard mask layer has a thickness of about 1 μm to about 20 μm; the carbon hard mask layer is a patterned layer; the patterned layer includes features with a height of about 1 μm to about 20 μm; the patterned layer includes features separated by vias, gaps, or spaces with a width of about 5 nm to about 250 nm; and the patterned layer includes features with an aspect ratio of about 20 to about 500.

19. The method of claim 12, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is disposed on an inner surface having such polar functional groups, and wherein such polar functional groups include CH groups, CO groups, C=O groups, or any combination thereof.

20. The method of claim 11, wherein the carbon hard mask layer comprises about 30 atomic percent (at%) to about 80 at% of carbon, about 10 at% to about 50 at% of hydrogen, and about 10 at% to about 20 at% of oxygen, and wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% of aluminum, about 5 at% to about 30 at% of oxygen, and the alumina-carbon hybrid hard mask further comprises about 50 at% to about 90 at% of carbon.

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