Substrate processing apparatus, plasma generation apparatus, plasma generation method, substrate processing method, semiconductor device manufacturing method and process

Abstract

A technique is provided that can uniformly process a film formed on a substrate. It includes: a processing chamber for processing a plurality of substrates; and a plasma generation unit having a first electrode portion and a second electrode portion, and generating plasma in the aforementioned processing chamber, wherein the first electrode portion is configured to extend from the lower part of the aforementioned processing chamber to the central part of the aforementioned processing chamber, and the second electrode portion is configured to extend from the upper part of the aforementioned processing chamber to the aforementioned central part of the aforementioned processing chamber.

Description

Substrate processing apparatus, plasma generation apparatus, plasma generation method, substrate processing method, method for manufacturing semiconductor device, and program The present disclosure relates to a substrate processing apparatus, a plasma generation apparatus, a plasma generation method, a substrate processing method, a method for manufacturing a semiconductor device, and a program. As one process of the manufacturing process of a semiconductor device (element), sometimes a substrate is loaded into a processing chamber of a substrate processing apparatus, and a source gas and a reaction gas are supplied into the processing chamber to form various films such as an insulating film, a semiconductor film, or a conductor film on the substrate, or to remove various films. In mass-produced components with fine patterns, in order to suppress impurity diffusion or to ensure the use of materials with low heat resistance such as organic materials, it is sometimes necessary to pursue low temperature. [Prior art documents] [Patent documents] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-324477 [Problems to be solved by the invention] In order to meet such technical requirements, plasma is usually used for substrate processing, but sometimes it is difficult to uniformly process the film formed on the substrate. The present disclosure provides a technique capable of uniformly processing the film formed on the substrate. [Means for solving the problems] According to one aspect of the present disclosure, there is provided a technique including: a processing chamber for processing a plurality of substrates; and a plasma generation unit including a first electrode unit and a second electrode unit, and generating plasma in the processing chamber, wherein the first electrode unit is configured to extend from the lower part of the processing chamber toward the central part of the processing chamber, and the second electrode unit is configured to extend from the upper part of the processing chamber toward the central part of the processing chamber. [Effects of the invention] According to the present disclosure, the film formed on the substrate can be uniformly processed. Hereinafter, embodiments of the present disclosure will be described with reference to FIGS. 1 to 12. In all the drawings, the same or corresponding structures are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted. In addition, the drawings used in the following description are all schematic drawings, and the dimensional relationships and ratios of the respective elements shown in the drawings do not necessarily conform to the actual ones. Further, also between a plurality of drawings, the dimensional relationships and ratios of the respective elements do not necessarily conform to each other. (1) Structure of the substrate processing apparatus (heating device) As shown in FIG. 1, the processing furnace 202 of the vertical substrate processing apparatus has a heater 207 as a heating device (heating mechanism). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate. In addition, the heater 207 is provided outside an electrode fixing member 301 described later. The heater 207 also functions as an activation mechanism (excitation unit) for activating (exciting) a gas by heat as described later. (Processing chamber) An electrode fixing member 301 described later is disposed inside the heater 207, and an electrode 300 of a plasma generation unit described later is disposed inside the electrode fixing member 301. Further, inside the electrode 300, a reaction tube 203 is disposed concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape with an upper end closed and a lower end open. Below the reaction tube 203, a manifold 209 is disposed concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and is formed in a cylindrical shape with upper and lower ends open. The upper end portion of the manifold 209 is engaged with the lower end portion of the reaction tube 203 to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The manifold 209 is supported by the heater base, whereby the reaction tube 203 is vertically installed. The processing container (reaction container) is mainly constituted by the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to be able to accommodate a plurality of wafers 200 as substrates. The reaction tube 203 forms the processing chamber 201 for processing the wafers 200. In addition, the processing container is not limited to the above structure, and there is also a case where only the reaction tube 203 is referred to as the processing container (reaction container). (Gas supply unit) Nozzles 249a and 249b are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209. Gas supply pipes 232a and 232b are respectively connected to the nozzles 249a and 249b. In this way, two nozzles 249a and 249b and two gas supply pipes 232a and 232b are provided on the processing container, and a plurality of types of gases can be supplied into the processing chamber 201. In addition, in the case where only the reaction tube 203 is used as the processing container, the nozzles 249a and 249b may be provided so as to penetrate the side wall of the reaction tube 203. On the gas supply pipes 232a and 232b, a flow controller (flow control unit), namely a mass flow controller (MFC) 241a and 241b, and an on-off valve, namely a valve 243a and 243b, are provided in sequence from the upstream side of the gas flow. At positions on the gas supply pipes 232a and 232b downstream of the valves 243a and 243b, gas supply pipes 232c and 232d for supplying inert gas are respectively connected. On the gas supply pipes 232c and 232d, MFCs 241c and 241d and valves 243c and 243d are provided in sequence from the upstream direction. As shown in FIG. 2, the nozzles 249a and 249b are respectively provided in a space that is annular in plan view between the inner wall of the reaction tube 203 and the wafer 200 in a manner that stands up from the lower part of the inner wall of the reaction tube 203 along the upper part toward the loading direction of the wafer 200. That is, the nozzles 249a and 249b are respectively provided on the sides of the ends (peripheral parts) of the respective wafers 200 carried into the processing chamber 201 in a manner perpendicular to the surface (flat surface) of the wafer 200. Gas supply holes 250a and 250b for supplying gas are respectively provided on the side surfaces of the nozzles 249a and 249b. The gas supply hole 250a is opened toward the center of the reaction tube 203 and can supply gas toward the wafer 200. A plurality of the gas supply holes 250a and 250b are respectively provided in the range from the lower part to the upper part of the reaction tube 203. In this way, in the present embodiment, the nozzles 249a and 249b arranged in a vertically long space that is annular in plan view defined by the inner wall of the side wall of the reaction tube 203 and the ends (peripheral parts) of the plurality of wafers 200 arranged in the reaction tube 203, that is, in a cylindrical space, transport gas. And the gas supply holes 250a and 250b respectively opened from the nozzles 249a and 249b first eject gas into the reaction tube 203 near the wafer 200. And the main flow of the gas in the reaction tube 203 is set in a direction parallel to the surface of the wafer 200, that is, the horizontal direction. By setting such a structure, gas can be uniformly supplied to each wafer 200, thereby improving the uniformity of the film thickness of the film formed on each wafer 200. The gas flowing on the surface of the wafer 200, that is, the remaining gas after the reaction, flows toward the exhaust port, that is, the exhaust pipe 231 described later. However, the flow direction of the remaining gas can be appropriately defined according to the position of the exhaust port and is not limited to the vertical direction. The source gas is supplied into the processing chamber 201 from the gas supply pipe 232a via the MFC 241a, the valve 243a, and the nozzle 249a. The reaction gas is supplied into the processing chamber 201 from the gas supply pipe 232b via the MFC 241b, the valve 243b, and the nozzle 249b. An inert gas is supplied into the processing chamber 201 from the gas supply pipes 232c and 232d via the MFCs 241c and 241d, the valves 243c and 243d, and the nozzles 249a and 249b respectively. The raw material gas supply system is mainly composed of the gas supply pipe 232a, the MFC 241a, and the valve 243a. The reaction gas supply system is mainly composed of the gas supply pipe 232b, the MFC 241b, and the valve 243b. The inert gas supply system is mainly composed of the gas supply pipes 232c and 232d, the MFCs 241c and 241d, and the valves 243c and 243d. The raw material gas supply system, the reaction gas supply system, and the inert gas supply system are also collectively referred to as the gas supply system (gas supply unit). The raw material gas and the reaction gas are also referred to as the processing gas. (Substrate support) As shown in FIG. 1, the susceptor 217 as the substrate support is configured to support (hold) multiple wafers 200, for example, 25 to 200 wafers, in a horizontal posture and arranged vertically in a state where their centers are aligned with each other, that is, arranged at intervals in multiple layers. The susceptor 217 is made of a heat-resistant material such as quartz or SiC. A heat insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in multiple layers below the susceptor 217. With this structure, the heat from the heater 207 is difficult to transfer to the sealing lid 219 side. However, the present embodiment is not limited to such a method. For example, instead of providing the heat insulating plate 218 below the susceptor 217, a heat insulating cylinder made of a heat-resistant material such as quartz or SiC and configured as a cylindrical member may be provided. (Plasma generation unit) Next, FIGS. 1, 2, 3(a), 3(b), 4(a), 4(b), 5(a), 5(b), 6(a) to 6(c), 7(a) to 7(c), 8(a) to 8(c), and 9(a) to 9(c) will be used to describe the plasma generation unit. Outside the reaction tube (processing container) 203, that is, outside the processing chamber 201, an electrode 300 for plasma generation is provided parallel to the wall surface of the reaction tube (processing container) 203. By applying electric power to the electrode 300, the gas inside the reaction tube (processing container) 203, that is, inside the processing chamber 201, can be plasma-excited, that is, the gas can be excited into a plasma state. Hereinafter, the situation of exciting the gas into a plasma state is also simply referred to as plasma excitation. The electrode 300 is configured to generate capacitively coupled plasma (Capacitively Coupled Plasma, abbreviated as CCP) inside the reaction tube (processing container) 203, that is, inside the processing chamber 201, by being applied with electric power, that is, high-frequency electric power (RF power). Specifically, as shown in FIG. 2, an electrode 300 and an electrode fixing member 301 for fixing the electrode 300 are disposed between the heater 207 and the reaction tube 203. The electrode fixing member 301 is disposed inside the heater 207, the electrode 300 is disposed inside the electrode fixing member 301, and the reaction tube 203 is disposed inside the electrode 300. That is, since the electrode 300 and the electrode fixing member 301 are provided outside the processing chamber 201, they do not need to be exposed to the processing gas. Since the electrode 300 and the electrode fixing member 301 are provided inside the heater 207, the heater 207 does not become an obstacle to the high-frequency power from the electrode 300. In addition, as shown in FIGS. 1 and 2, the electrode 300 and the electrode fixing member 301 are respectively provided in an annular space in plan view between the inner wall of the heater 207 and the outer wall of the reaction tube 203 so as to extend from the lower part of the outer wall of the reaction tube 203 along the upper part in the arrangement direction of the wafers 200. The electrode 300 is provided in parallel with the nozzles 249a and 249b. The electrode 300 and the electrode fixing member 301 are arranged and configured to be concentric with the reaction tube 203 and the heater 207 in plan view and not to contact the reaction tube 203 and the heater 207. The electrode fixing member 301 is made of an insulating material (insulator) and is provided so as to cover at least a part of the electrode 300 and the reaction tube 203. Thus, the electrode fixing member 301 can also be referred to as a cover (cover, quartz cover, insulating wall, insulating plate) or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall). Thus, the electrode fixing member 301 can reduce the electromagnetic wave radiation from the electrode 300 to the outside of the substrate processing apparatus. As shown in FIG. 2, a plurality of electrodes 300 are provided. These plurality of electrodes 300 are fixedly provided on the inner wall of the electrode fixing member 301. More specifically, as shown in FIGS. 5(a) and 5(b), protrusions (hooks) 310 capable of hooking the electrodes 300 are provided on the inner wall surface of the electrode fixing member 301. Further, an opening 305 serving as a through hole through which the protrusion 310 can be inserted is provided in the electrode 300. The electrode 300 can be fixed to the electrode fixing member 301 by hooking through the opening 305 onto the protrusion 310 provided on the inner wall surface of the electrode fixing member 301. In addition, in FIG. 3(a), an example is shown in which three openings 305 are provided for one electrode 300 and the electrode is fixed by hooking three protrusions 310 for one electrode 300. That is, an example in which one electrode is fixed at three positions is shown. In FIG. 4(a), an example is shown in which two openings 305 are provided for one electrode 300 and the electrode is fixed by hooking two protrusions 310 for one electrode 300. That is, an example in which one electrode is fixed at two positions is shown. Further, FIG. 2 shows an electrode unit in which two sets of nine electrodes 300 are fixed to one electrode fixing member 301. In addition, FIG. 2 shows an example of an electrode unit in which six electrodes 300-1 and three electrodes 300-0 are fixed to one electrode fixing member 301. The electrodes 300 (first type of electrode 300-1, second type of electrode 300-2, third type of electrode 300-3, zero type of electrode 300-0) are made of an oxidation-resistant material such as nickel (Ni). The electrodes 300 can also be made of a metal material such as SUS, aluminum (Al), or copper (CU), but by making them of an oxidation-resistant material such as Ni, deterioration of the conductivity can be suppressed, and thus a decrease in plasma generation efficiency can be suppressed. Further, the electrodes 300 can also be made of a Ni alloy material added with Al. In this case, an aluminum oxide film (AlO film), which is an oxidation film having high heat resistance and corrosion resistance, can also be formed on the outermost surface of the electrode 300. The AlO film formed on the outermost surface of the electrode 300 functions as a protective film (barrier film, blocking film) and can suppress the aggravation of deterioration inside the electrode 300. Thereby, a decrease in plasma generation efficiency due to a decrease in the conductivity of the electrode 300 can be further suppressed. The electrode fixing member 301 is made of an insulating substance (insulator), such as a heat-resistant material like quartz or SiC. The material of the electrode fixing member 301 is preferably the same as the material of the reaction tube 203. As shown in FIGS. 3(a) and 3(b), the electrode 300 includes a first type of electrode 300-1 and a zero type of electrode 300-0. As shown in FIGS. 4(a) and 4(b), the electrode 300 includes a first type of electrode 300-1, a second type of electrode 300-2, a third type of electrode 300-3, and a zero type of electrode 300-0. The first type of electrode 300-1, the second type of electrode 300-2, and the third type of electrode 300-3 are connected to a high-frequency power source (RF power source) 320 via a matcher 325 and are applied with an arbitrary potential. The zero type of electrode 300-0 is grounded and becomes a reference potential (0V). The first type of electrode 300-1, the second type of electrode 300-2, and the third type of electrode 300-3 are also referred to as Hot electrodes or HOT electrodes or the first electrode. In addition, the zero type of electrode 300-0 is also referred to as a Ground electrode or a GND electrode or the second electrode. The first type of electrode 300-1, the second type of electrode 300-2, the third type of electrode 300-3, and the zero type of electrode 300-0 are each configured as a plate-shaped (flat plate shape) component when viewed from the front. In FIG. 3(a), an example is shown in which eight first type of electrodes 300-1 and four zero type of electrodes 300-0 are provided. In FIGS. 4(a) and 4(b), an example is shown in which a plurality of third type of electrodes 300-3 are further provided, that is, four first type of electrodes 300-1, two second type of electrodes 300-2, two third type of electrodes 300-3, and four zero type of electrodes 300-0. Since an arbitrary potential is applied to the first electrode and a reference potential is applied to the second electrode, an arbitrary RF power is applied between the first electrode and the second electrode. Thereby, the plasma generation amount can be controlled. By providing a plurality of first electrodes, the plasma generation region can be expanded. By applying RF power between the first type of electrode 300-1 and the zero type of electrode 300-0 from the RF power source 320 via the matcher 325, plasma is generated in the region between the first type of electrode 300-1 and the zero type of electrode 300-0. Similarly, by applying RF power between the second type of electrode 300-2 and the zero type of electrode 300-0, plasma is generated in the region between the second type of electrode 300-2 and the zero type of electrode 300-0. Similarly, by applying RF power between the third type of electrode 300-3 and the zero type of electrode 300-0, plasma is generated in the region between the third type of electrode 300-3 and the zero type of electrode 300-0. These regions are also referred to as plasma generation regions. In addition, as shown in FIG. 1, the electrode 300 is arranged in a direction (vertical direction, the direction of loading the substrate) perpendicular to the processing container. Further, as shown in FIGS. 2, 3(a), 3(b), 4(a), and 4(b), it is in an arc shape in a plan view, and is arranged such that the distances (gaps) between adjacent electrodes 300 (the first type of electrode 300-1, the second type of electrode 300-2, the third type of electrode 300-3, the zero type of electrode 300-0) are equal. Further, as shown in FIGS. 2, 3(b), and 4(b), the electrode 300 is arranged in a substantially arc shape along the outer wall of the reaction tube 203 between the reaction tube 203 and the heater 207 in a plan view. The electrode 300 is fixedly arranged on the inner wall surface of, for example, an electrode fixing member 301 formed in an arc shape with a central angle of 30 degrees or more and 240 degrees or less. Further, as described above, the electrode 300 is provided in parallel with the nozzles 249a and 249b. Here, the electrode unit is preferably arranged at a position avoiding the nozzles 249a and 249b and the exhaust pipe 231 as shown in FIG. 2. In FIG. 2, an example is shown in which two electrode units are arranged so as to avoid the nozzles 249a and 249b and face each other across the center of the wafer 200 (reaction tube 203). Further, in FIG. 2, an example is shown in which two electrode units are symmetrically arranged with the straight line L as the axis of symmetry in a plan view. By arranging the electrode unit in this way, the nozzles 249a and 249b, the temperature sensor 263, and the exhaust pipe 231 can be arranged at positions outside the plasma generation region in the processing chamber 201. Thereby, plasma damage to these components, consumption and breakage of these components, and generation of fine particles from these components can be suppressed. In the present disclosure, when there is no need to specifically distinguish and explain, it is described as the electrode 300 for explanation. For the electrode 300, plasma (active species) 302 is generated in the reaction tube 203 by inputting high-frequency power of, for example, 25 MHz or more and 35 MHz or less, more specifically, a frequency of 27.12 MHz, from the high-frequency power supply 320 via the matcher 325. By the plasma generated in this way, the plasma 302 for substrate processing can be supplied from around the wafer 200 to the surface of the wafer 200. It is configured to supply power from the lower side (lower end) of the electrode 300. The plasma generation unit (plasma excitation unit, plasma activation mechanism, plasma generation device) that excites (activates) the gas into a plasma state is mainly composed of the electrode 300, that is, the first electrode (the first type of electrode 300-1, the second type of electrode 300-2, the third type of electrode 300-3) and the second electrode (the zero type of electrode 300-0). It can also be considered that at least one of the electrode fixing member 301, the matcher 325, and the RF power supply 320 is included in the plasma generation unit. In addition, as shown in FIG. 5(a), an opening 305 formed by a circular notch 303 through which a protrusion head 311 described later passes and a sliding notch 304 for sliding a protrusion shaft 312 is formed on the electrode 300. The electrode 300 is preferably configured in a range where the thickness is 0.1 mm or more and 1 mm or less and the width is 5 mm or more and 30 mm or less in order to maintain sufficient strength and avoid a significant reduction in the efficiency of heating the wafer by the heat source. In addition, it preferably has a bending structure as a deformation suppression portion to prevent deformation caused by heating of the heater 207. Since the electrode 300 in this case is disposed between the reaction tube 203 and the heater 207, considering the space limitation thereof, the bending angle is preferably 90° to 175°. When a film based on thermal oxidation is formed on the electrode surface, the film may peel off due to thermal stress to generate fine particles, so care needs to be taken with excessive bending. In a vertical substrate processing apparatus, for example, the frequency of the high-frequency power supply 320 is implemented at 27.12 MHz, and the electrode 300 having a length of 1650 mm and a thickness of 1 mm is used to generate a CCP mode plasma. As shown in FIGS. 3(a) and 3(b), eight first electrodes 300-1 and four zero-th electrodes 300-0 are arranged in this order on the outer wall of the tubular reaction tube 203: first electrode 300-1, first electrode 300-1, zero-th electrode 300-0, first electrode 300-1, first electrode 300-1, ···. Here, the first electrode 300-1 has a width of 10 mm and a height of 1650 mm, for example. The zero-th electrode 300-0 has a width of 10 mm and a height of 1650 mm, for example. The electrode pitch (center-to-center distance) is 20 mm. That is, the electrodes 300 are arranged such that two first electrodes 300-1 are continuously arranged, and one zero-th electrode 300-0 is sandwiched between the two continuously arranged first electrodes 300-1. In addition, the lengths of the plurality of first electrodes (first electrodes 300-1) are the same, and the lengths of the plurality of first electrodes (first electrodes 300-1) and the length of the second electrode (zero-th electrode 300-0) are the same. As shown in FIGS. 4(a) and 4(b), on the outer wall of the tubular reaction tube 203, four first electrodes 300-1, two second electrodes 300-2, two third electrodes 300-3, and four zero-th electrodes 300-0 are alternately arranged in the order of the first electrode 300-1, the second electrode 300-2, the zero-th electrode 300-0, the first electrode 300-1, the third electrode 300-3, the zero-th electrode 300-0, the first electrode 300-1, the second electrode 300-2, the zero-th electrode 300-0... Here, the first electrode 300-1 has a width of 12.5 mm and a height of 1650 mm, for example. The second electrode 300-2 has a width of 12.5 mm and a height of 1350 mm, for example. The third electrode 300-3 has a width of 12.5 mm and a height of 1050 mm, for example. The zero-th electrode 300-0 has a width of 12.5 mm and a height of 1650 mm, for example. Moreover, for example, the gap between the first electrode 300-1 and the second electrode 300-2, the gap between the second electrode 300-2 and the zero-th electrode 300-0, the gap between the zero-th electrode 300-0 and the first electrode 300-1, the gap between the first electrode 300-1 and the third electrode 300-3, and the gap between the third electrode 300-3 and the zero-th electrode 300-0 are all set to 7.5 mm. In FIGS. 4(a) and 4(b), regarding the front end position above the electrode 300, the first electrode 300-1 is the same as or lower than the zero-th electrode 300-0. In addition, the second electrode 300-2 and the third electrode 300-3 are lower than both the first electrode 300-1 and the zero-th electrode 300-0. The third electrode 300-3 is lower than the second electrode 300-2. That is, the lengths of the plurality of first electrodes are different. In addition, the length of the first electrode (the first electrode 300-1) with a longer length among the plurality of first electrodes is the same as the length of the second electrode (the zero-th electrode 300-0). Since the reflection coefficient changes due to the adjustment of the length of the front end portion of the electrode 300, the phase difference between the traveling wave and the reflected wave can be changed to displace the voltage distribution of the standing wave in the wafer region downward. Thereby, the deviation of the voltage distribution can be improved, and a density distribution of the plasma 302 with good uniformity can be ensured, thereby improving the uniformity of the film thickness and film quality between the wafers 200. Here, it is preferable that the pressure inside the furnace during substrate processing is controlled within a range of 10 Pa or more and 300 Pa or less. This is because when the pressure inside the furnace is lower than 10 Pa, the mean free path of gas molecules is longer than the Debye length of the plasma, and the plasma directly hitting the furnace wall becomes prominent, making it difficult to suppress the generation of fine particles. Additionally, when the pressure inside the furnace is higher than 300 Pa, the plasma generation efficiency saturates. Thus, even if the reaction gas is supplied, the amount of generated plasma does not change, resulting in the unnecessary consumption of the reaction gas, and the mean free path of gas molecules becomes shorter. This leads to a deterioration in the transport efficiency of plasma active species to the wafer. (Electrode fixing jig) Next, the electrode fixing member 301 of the fixed electrode 300 as an electrode fixing jig will be described using FIGS. 3(a), 3(b), 5(a), and 5(b). As shown in FIGS. 3(a), 3(b), 5(a), and 5(b), regarding the plurality of electrodes 300, their openings 305 are hooked on the protrusions 310 provided on the inner wall surface of the curved electrode fixing member 301 as an electrode fixing jig, and after sliding, they are fixed. Moreover, the electrodes 300 are unitized (hook-type electrode unit) in a manner integrated with the electrode fixing member 301 and are provided on the outer periphery of the reaction tube 203. In addition, quartz and nickel alloy are respectively used as the materials of the electrode fixing member 301 and the electrode 300. The electrode fixing member 301 is preferably configured to have a thickness in the range of 1 mm or more and 5 mm or less in order to maintain sufficient strength and avoid a significant reduction in the efficiency of heating the wafer by the heater 207. If the thickness of the electrode fixing member 301 is less than 1 mm, the required strength cannot be obtained for the self-weight of the electrode fixing member 301 and temperature changes, etc. If it is configured such that the thickness of the electrode fixing member 301 is greater than 5 mm, since it will absorb the thermal energy radiated from the heater 207, the heat treatment of the wafer 200 cannot be properly performed. In addition, the electrode fixing member 301 has a plurality of protruding portions 310 in the shape of thumbtacks as fixing portions on the inner wall surface on the reaction tube side for fixing the electrode 300. The protruding portion 310 is composed of a protruding head portion 311 and a protruding shaft portion 312. The maximum width of the protruding head portion 311 is smaller than the diameter of the circular notch portion 303 of the opening portion 305 of the electrode 300. In addition, the maximum width of the protruding shaft portion 312 is smaller than the width of the sliding notch portion 304. The opening portion 305 of the electrode 300 has a keyhole-like shape. The sliding notch portion 304 can guide the above-mentioned protruding shaft portion 312 during sliding, and the protruding head portion 311 is configured not to fall off in the sliding notch portion 304. That is to say, it can be said that the electrode fixing jig has a fixing portion having a protruding head portion 311 as a front end portion, and the protruding head portion 311 inhibits the electrode 300 from falling off from the protruding shaft portion 312 as a columnar portion for latching. In addition, it is obvious that as long as the shapes of the aforementioned opening portion 305 and the protruding head portion 311 can latch the electrode 300 to the electrode fixing member 301, it is not limited to the shapes shown in Fig. 3(a), Fig. 3(b), Fig. 5(a) and Fig. 5(b). For example, the protruding head portion 311 may also have a convex shape such as a hammer or a spike. In order to space the electrode fixing member 301 or the reaction tube 203 from the electrode 300 by a certain distance, an elastic body such as a spacer or a spring can be provided between the two, or they can also have a structure integrated with the electrode fixing member 301 or the electrode 300. In this embodiment, the spacer 330 shown in Fig. 5(b) has a structure integrated with the electrode fixing member 301. If there are a plurality of the spacers 330 for one electrode, it is more effective for fixing the distance between the two to be constant. In order to obtain high substrate processing ability at a substrate temperature of 500 °C or lower, it is ideal to set the occupancy rate of the electrode fixing member 301 to a substantially circular arc shape with a central angle of 30° or more and 240° or less. In addition, it is ideal that the electrode fixing member 301 is arranged to avoid the exhaust pipe 231 as an exhaust port and the nozzles 249a, 249b, etc., to avoid generating fine particles. That is to say, the electrode fixing member 301 is arranged on the outer periphery of the reaction tube 203, and is located at a position other than the positions where the nozzles 249a, 249b as the gas supply portions in the reaction tube 203 and the exhaust pipe 231 as the gas exhaust portion are provided. In this embodiment, two electrode fixing members 301 with a central angle of 110° are symmetrically arranged on the left and right. (Spacer) Next, FIGS. 5(a) and 5(b) show a spacer 330 for fixing the electrode 300 at a certain distance from the outer wall of the electrode fixing member 301 or the reaction tube 203, which is an electrode fixing jig. For example, the spacer 330 is integrated with the electrode fixing member 301 by a cylindrical quartz material and abuts against the electrode 300, whereby the electrode 300 is fixed to the electrode fixing member 301. As long as the electrode 300 can be fixed at a certain distance from the electrode fixing member 301 or the reaction tube 203, the spacer 330 can be in any form. In addition, the spacer 330 can be integrated with either the electrode 300 or the electrode fixing member 301. For example, the spacer 330 can be integrated with the electrode fixing member 301 by a semi-cylindrical quartz material to fix the electrode 300. In addition, the spacer 330 can be made of a metal plate material such as SUS and integrated with the electrode to fix the electrode 300. Anyway, due to the provision of the protrusion 310 and the spacer, the positioning of the electrode 300 is easy, and in the case where the electrode 300 deteriorates, only the electrode 300 can be replaced, so the cost is reduced. Here, the spacer 330 can also be included in the above-mentioned electrode unit. (Configuration of Electrode Unit) In order to ensure high productivity, it is necessary to make the electrode 300 longer, but there are concerns about the distribution deviation of the plasma intensity (such as the space potential) (for example, the space potential is different at the front end and the root of the electrode) and the standing wave effect caused by the elongation. In the longitudinal direction of the electrode 300, the uneven voltage distribution of the standing wave (cosine curve) formed by the superposition of the traveling wave and the reflected wave has an impact, and the density distribution of the plasma 302 also shows unevenness. Therefore, in terms of the film thickness and film quality that are related to the density distribution of the plasma 302, non-uniformity appears between the wafers 200. As a study to solve such problems, the electrode unit is divided and arranged in the length direction (vertical direction). By using this method, the deviation of the voltage distribution can be improved, and a density distribution of the plasma 302 with good uniformity can be ensured, thereby improving the uniformity of the film thickness and film quality between the wafers 200. For example, as shown in FIGS. 6(a) to 6(c), the electrode unit is composed of two first electrode portions 31a and 31b and two second electrode portions 32a and 32b. The first electrode portions 31a and 31b are configured to extend from the lower part of the processing chamber 201 toward the central part of the processing chamber 201. The second electrode portions 32a and 32b are configured to extend from the upper part of the processing chamber 201 toward the central part of the processing chamber 201. In the central part of the processing chamber 201, there is a gap between the first electrode portion 31a and the second electrode portion 32a, and there is a gap between the first electrode portion 31b and the second electrode portion 32b. Here, the central part of the processing chamber 201 is the central part with respect to the placement direction (vertical direction) for placing a plurality of wafers 200, and the same applies in the following description. The first electrode portions 31a and 31b and the second electrode portions 32a and 32b are symmetrically arranged across the processing chamber 201. The first electrode portion 31a and the second electrode portion 32a are arranged in the vertical direction. The first electrode portion 31b and the second electrode portion 32b are arranged in the vertical direction. The first electrode portions 31a and 31b and the second electrode portions 32a and 32b are each composed of the electrode unit shown in FIG. 3(a). The length of the first type of electrode 300-1 as the first electrode is the same as the length of the zero-th type of electrode 300-0 as the second electrode. For example, as shown in FIGS. 7(a) to 7(c), the electrode unit is composed of two first electrode portions 31a and 31b and two second electrode portions 32a and 32b. The first electrode portions 31a and 31b are configured to extend from the lower part of the processing chamber 201 toward the central part of the processing chamber 201. The second electrode portions 32a and 32b are configured to extend from the upper part of the processing chamber 201 toward the central part of the processing chamber 201. In the central part of the processing chamber 201, there is a gap between the first electrode portion 31a and the second electrode portion 32a, and there is a gap between the first electrode portion 31b and the second electrode portion 32b. The first electrode portions 31a and 31b and the second electrode portions 32a and 32b are symmetrically arranged across the processing chamber 201. The first electrode portion 31a and the second electrode portion 32a are arranged in the vertical direction. The first electrode portion 31b and the second electrode portion 32b are arranged in the vertical direction. The first electrode portions 31a and 31b and the second electrode portions 32a and 32b are each composed of the electrode unit shown in FIG. 4(a). The lengths of the first type of electrode 300-1, the second type of electrode 300-2, and the third type of electrode 300-3 included in the first electrode as the HOT electrode are different from each other, and the length of the longer first type of electrode 300-1 is the same as the length of the GND electrode, that is, the zero-th type of electrode 300-0 as the second electrode. In addition, the length of the second type of electrode 300-2 is configured to be shorter than the length of the third type of electrode 300-3. When the electrode units are arranged as shown in FIGS. 6(a) to 6(c) and FIGS. 7(a) to 7(c), when there is no interference between the upper and lower electrode portions (the second electrode portions 32a, 32b and the first electrode portions 31a, 31b), one high-frequency power supply is used. When considering interference between the upper and lower electrode portions, different (two) high-frequency power supplies are used in the upper and lower electrode portions, and high-frequency power is applied to each electrode portion. At this time, it is preferable to stagger the frequencies of the applied high-frequency power by about 1 MHz. When the frequencies used are the same in the upper and lower electrode portions, as shown in FIGS. 8(a) to 8(c) and FIGS. 9(a) to 9(c), it is divided vertically in the central portion of the processing chamber 201, and the arrangement of the upper electrode portion (the second electrode portions 32a, 32b) and the arrangement of the lower electrode portion (the first electrode portions 31a, 31b) are rotated 90 degrees (about 45 degrees to 90 degrees) in the circumferential direction of the processing chamber. In this way, if the distance between the upper electrode portion and the lower electrode portion is increased by staggering the upper electrode portion and the lower electrode portion in the circumferential direction, this space functions as an insulating function, so that interference can be prevented from occurring. For example, as shown in FIGS. 8(a) to 8(c), the electrode unit is composed of two first electrode portions 31a, 31b and two second electrode portions 32a, 32b. The first electrode portions 31a, 31b are configured to extend from the lower part of the processing chamber 201 to the central part of the processing chamber 201. The second electrode portions 32a, 32b are configured to extend from the upper part of the processing chamber 201 to the central part of the processing chamber 201. The first electrode portions 31a, 31b and the second electrode portions 32a, 32b are symmetrically arranged across the processing chamber 201. The first electrode portion 31a and the second electrode portion 32a are arranged with a 90-degree stagger in the circumferential direction of the processing chamber 201. The first electrode portion 31b and the second electrode portion 32b are arranged with a 90-degree stagger in the circumferential direction of the processing chamber 201. The first electrode portions 31a, 31b and the second electrode portions 32a, 32b are each composed of the electrode unit shown in FIG. 3(a). The length of the HOT electrode, i.e., the first type of electrode 300-1 serving as the first electrode, is the same as the length of the GND electrode, i.e., the zero type of electrode 300-0 serving as the second electrode. By arranging the upper second electrode portions 32a, 32b and the lower first electrode portions 31a, 31b separately, interference can be prevented from occurring. For example, as shown in FIGS. 9(a) to 9(c), the electrode unit is composed of two first electrode portions 31a and 31b and two second electrode portions 32a and 32b. The first electrode portions 31a and 31b are configured to extend from the lower part of the processing chamber 201 toward the central part of the processing chamber 201. The second electrode portions 32a and 32b are configured to extend from the upper part of the processing chamber 201 toward the central part of the processing chamber 201. The first electrode portions 31a and 31b and the second electrode portions 32a and 32b are symmetrically arranged across the processing chamber. The first electrode portion 31a and the second electrode portion 32a are arranged with a 90-degree stagger in the circumferential direction of the processing chamber 201. The first electrode portion 31b and the second electrode portion 32b are arranged with a 90-degree stagger in the circumferential direction of the processing chamber 201. The first electrode portions 31a and 31b and the second electrode portions 32a and 32b are each composed of the electrode unit shown in FIG. 4(a). The lengths of the first type of electrode 300-1, the second type of electrode 300-2, and the third type of electrode 300-3 included in the HOT electrode, which is the first electrode, are different, and the length of the longer first type of electrode 300-1 is the same as the length of the GND electrode, which is the zero-th type of electrode 300-0 as the second electrode. In addition, the length of the second type of electrode 300-2 is configured to be shorter than the length of the third type of electrode 300-3. By arranging the upper second electrode portions 32a and 32b and the lower first electrode portions 31a and 31b separately, interference can be prevented. In addition, the first electrode portions 31a and 31b may be configured to extend from the lower part of the processing chamber 201 upward beyond the central part of the processing chamber 201 as shown in FIG. 10(a). In addition, the second electrode portions 32a and 32b may be configured to extend from the upper part of the processing chamber 201 downward beyond the central part of the processing chamber 201 as shown in FIG. 10(a). (Exhaust section) An exhaust pipe 231 for exhausting the environment in the processing chamber 201 is provided on the reaction tube 203 as shown in FIG. 1. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector (pressure detection section) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as an exhaust valve (pressure adjustment section). The APC valve 244 is configured to be able to perform vacuum exhaust and stop vacuum exhaust in the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating. The APC valve 244 is also configured to be able to adjust the pressure in the processing chamber 201 by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It can also be considered that the vacuum pump 246 is included in the exhaust system. The exhaust pipe 231 is not limited to being provided on the reaction tube 203, and can also be provided on the manifold 209 in the same way as the nozzles 249a and 249b. (Peripheral device) A seal cover 219 as a furnace port cover body that can airtightly seal the lower end opening of the manifold 209 is provided below the manifold 209. The seal cover 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The seal cover 219 is made of a metal such as SUS and is formed in a disk shape. An O-ring 220b as a sealing member that abuts against the lower end of the manifold 209 is provided on the upper surface of the seal cover 219. A rotation mechanism 267 for rotating the susceptor 217 is provided on the side of the seal cover 219 opposite to the processing chamber 201. The rotation shaft 255 of the rotation mechanism 267 penetrates the seal cover 219 and is connected to the susceptor 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the susceptor 217. The seal cover 219 is configured to move up and down in the vertical direction by a susceptor elevator 115 as a lifting mechanism vertically provided outside the reaction tube 203. The susceptor elevator 115 is configured to be able to carry the susceptor 217 into and out of the processing chamber 201 by lifting the seal cover 219. The susceptor elevator 115 is configured as a transfer device (transfer mechanism) for transferring the susceptor 217, that is, the wafer 200, into and out of the processing chamber 201. In addition, a baffle 219s as a furnace port cover body that can airtightly seal the lower end opening of the manifold 209 during the period when the seal cover 219 is lowered by the susceptor elevator 115 is provided below the manifold 209. The baffle 219s is made of a metal such as SUS and is formed in a disk shape. An O-ring 220c as a sealing member that abuts against the lower end of the manifold 209 is provided on the upper surface of the baffle 219s. The opening and closing operation (lifting operation, rotation operation, etc.) of the baffle 219s is controlled by a baffle opening and closing mechanism 115s. Inside the reaction tube 203, a temperature sensor 263 serving as a temperature detector is provided. By adjusting the energization of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203 in the same manner as the nozzles 249a and 249b. (Control Device) Next, the control device will be described with reference to FIG. 11. A controller 121 serving as a control unit (control device) is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as, for example, a touch panel is connected to the controller 121. The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. A control program for controlling the operation of the substrate processing device, or a process recipe such as the steps and conditions of the film formation process described later is stored in the storage device 121c in a readable manner. The process recipe is combined in such a way that the controller 121 can execute each step in various processes (film formation processes) described later and obtain a specified result, and functions as a program. Hereinafter, the process recipe, the control program, etc. will be collectively referred to and simply called a program. In addition, the process recipe will also be simply called a recipe. In this specification, when the term "program" is used, there are cases where it includes only the recipe alone, only the control program alone, or both. The RAM 121b is configured as a storage area (working area) that temporarily holds programs and data read by the CPU 121a. The I / O port 121d is connected to the above-mentioned MFCs 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, susceptor elevator 115, shutter opening / closing mechanism 115s, high-frequency power supply 320, etc. The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and can read out a recipe from the storage device 121c according to the input of an operation instruction from the input / output device 122 or the like. The CPU 121a is configured to control the rotation mechanism 267, the flow rate adjustment operations of various gases implemented based on the MFCs 241a to 241d, the opening and closing operations of the valves 243a to 243d, the opening and closing operation of the APC valve 244, the pressure adjustment operation executed by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 executed based on the temperature sensor 263, the forward and reverse rotation, rotation angle, and rotation speed adjustment operations of the susceptor 217 executed based on the rotation mechanism 267, the lifting operation of the susceptor 217 executed based on the susceptor elevator 115, the opening and closing operation of the shutter 219s executed based on the shutter opening and closing mechanism 115s, the power supply of the high-frequency power supply 320, etc. in a manner conforming to the content of the read-out recipe. The controller 121 can be configured by installing the above program stored in an external storage device (such as a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a USB memory, a semiconductor memory such as an SSD) 123 in a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, they will also be collectively referred to and simply called recording media. In this specification, when the term recording medium is used, there are cases where it includes only the storage device 121c alone, only the external storage device 123 alone, or both. In addition, the program can be provided to the computer without using the external storage device 123 by using communication means such as the Internet or a dedicated line. (2) Substrate processing step Use FIG. 12 to illustrate a process example of a step in a manufacturing process of forming a film on a substrate as a semiconductor device (element) using the above-described substrate processing apparatus. In the following description, the operations of each part constituting the substrate processing apparatus are controlled by the controller 121. In this specification, there are also cases where, for convenience, the order of the film formation process shown in FIG. 12 is shown as follows. (Raw material gas → Reaction gas) × n In this specification, when the term "wafer" is used, it may refer to the wafer itself or a laminate of the wafer and a specified layer or film formed on its surface. When the term "surface of the wafer" is used in this specification, it may refer to the surface of the wafer itself or the surface of a specified layer or the like formed on the wafer. When it is described in this specification that "a specified layer is formed on the wafer", it may refer to directly forming a specified layer on the surface of the wafer itself or forming a specified layer on a layer or the like formed on the wafer. The case where the term "substrate" is used in this specification is synonymous with the case where the term "wafer" is used. (Loading Step: S1) When loading a plurality of wafers 200 into the susceptor 217 (wafer loading), the shutter 219s is moved by the shutter opening / closing mechanism 115s, and the lower end opening of the manifold 209 is opened (shutter opening). Then, as shown in FIG. 1, the susceptor 217 supporting a plurality of wafers 200 is lifted by the susceptor elevator 115 and loaded into the processing chamber 201 (susceptor loading). In this state, the seal cover 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b. (Pressure / Temperature Adjustment Step: S2) The inside of the processing chamber 201 is evacuated (pressure reduction evacuation) by the vacuum pump 246 so that the inside of the processing chamber 201 becomes a desired pressure (vacuum degree). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 maintains an always-operating state at least until the end of the film formation step described later. In addition, the inside of the processing chamber 201 is heated by the heater 207 so that the inside of the processing chamber 201 becomes a desired temperature. At this time, the energization of the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that a desired temperature distribution is obtained inside the processing chamber 201 (temperature adjustment). The heating of the inside of the processing chamber 201 by the heater 207 continues at least until the end of the film formation step described later. However, when the film formation step is performed under temperature conditions below room temperature, the heating of the inside of the processing chamber 201 by the heater 207 may not be performed. In addition, when only such temperature processing is performed, the heater 207 is not required, and the heater 207 may not be provided in the substrate processing apparatus. In this case, the structure of the substrate processing apparatus can be simplified. Next, the rotation of the susceptor 217 and the wafers 200 based on the rotation mechanism 267 is started. The rotation of the susceptor 217 and the wafers 200 based on the rotation mechanism 267 continues at least until the end of the film formation step described later. (Film formation steps: S3, S4, S5, S6) Then, the film formation steps are carried out by sequentially performing steps S3, S4, S5, and S6. (Raw material gas supply steps: S3, S4) In step S3, a raw material gas is supplied to the wafer 200 in the processing chamber 201. Open valve 243a, and let the raw material gas flow into the gas supply pipe 232a. The raw material gas is adjusted in flow rate by MFC241a, and is supplied into the processing chamber 201 from the gas supply hole 250a via the nozzle 249a, and is discharged from the exhaust pipe 231. At this time, the raw material gas is supplied to the wafer 200. At this time, valve 243c can also be opened simultaneously to let the inert gas flow into the gas supply pipe 232c. The inert gas is adjusted in flow rate by MFC241c, and is supplied into the processing chamber 201 together with the raw material gas, and is discharged from the exhaust pipe 231. In addition, in order to prevent the raw material gas from invading into the nozzle 249b, valve 243d can also be opened to let the inert gas flow into the gas supply pipe 232d. The inert gas is supplied into the processing chamber 201 via the gas supply pipe 232d and the nozzle 249b, and is discharged from the exhaust pipe 231. As the processing conditions in this step, the following are exemplified: Processing temperature: room temperature (25°C) to 550°C, preferably 400 to 500°C; Processing pressure: 1 to 4000 Pa, preferably 100 to 1000 Pa; Raw material gas supply flow rate: 0.1 to 3 slm; Raw material gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm In addition, the expression of the numerical range such as "25 to 550°C" in this specification means that the lower limit value and the upper limit value are included in this range. Therefore, for example, "25 to 550°C" means "greater than or equal to 25°C and less than or equal to 550°C". The same applies to other numerical ranges. In addition, the processing temperature in this specification refers to the temperature of the wafer 200 or the temperature in the processing chamber 201, and the processing pressure refers to the pressure in the processing chamber 201. In addition, gas supply flow rate: 0 slm means the case where the gas is not supplied. The same applies to the following descriptions. By supplying the raw material gas to the wafer 200 under the above conditions, a first layer is formed on the wafer 200 (the bottom film on the surface). For example, when the following silicon (Si)-containing gas is used as the raw material gas, a Si-containing layer is formed as the first layer. After the first layer is formed, valve 243a is closed to stop the supply of the source gas into the processing chamber 201. At this time, the APC valve 244 is kept open, and the inside of the processing chamber 201 is evacuated by the vacuum pump 246 to exhaust the unreacted source gas remaining in the processing chamber 201, the source gas after assisting in the formation of the first layer, reaction by-products, etc. from the processing chamber 201. In addition, valves 243c and 243d are opened to supply an inert gas into the processing chamber 201 (S4). The inert gas functions as a purge gas. As the source gas, for example, tetra(dimethylamino)silane (Si[N(CH 3 ) 2 4 , abbreviated as: 4DMAS) gas, tris(dimethylamino)silane (Si[N(CH 3 ) 2 3 H, abbreviated as: 3DMAS) gas, bis(dimethylamino)silane (Si[N(CH 3 ) 2 2 H 2 , abbreviated as: BDMAS) gas, bis(diethylamino)silane (Si[N(C 2 H 5 ) 2 2 H 2 , abbreviated as: BDEAS) gas, bis(tert-butylamino)silane (SiH 2 [NH(C 4 H 9 )] 2 , abbreviated as: BTBAS) gas, (diisopropylamine)silane (SiH 3 [N(C 3 H 7 ) 2 , abbreviated as: DIPAS) gas and other amino-silane gases. As a source gas, one or more of them can be used. In addition, as a source gas, it is also possible to use, for example, methylchlorosilane (SiH 3 Cl, abbreviated as: MCS) gas, dichlorosilane (SiH 2 Cl 2 , abbreviated as: DCS) gas, trichlorosilane (SiHCl 3 , abbreviated as: TCS) gas, tetrachlorosilane (SiCl 4 , abbreviated as: STC) gas, hexachloroethylsilane (Si 2 Cl 6 , abbreviated as: HCDS) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviated as: OCTS) gas and other chloro-silane gases, silicon tetrafluoride (SiF 4 ) gas, difluorosilane (SiH 2 F 2 ) gas and other fluoro-silane gases, silicon tetrabromide (SiBr 4 ) gas, dibromosilane (SiH 2 Br 2 ) gas and other bromo-silane gases, silicon tetraiodide (SiI 4 ) gas, diiodosilane (SiH 2 I 2 ) gas and other iodo-silane gases. That is, as a source gas, it is possible to use halogenated silane gases. As a source gas, one or more of them can be used. In addition, as a source gas, it is possible to use, for example, silane (SiH 4 , abbreviated as: MS) gas, disilane (Si 2 H 6 , abbreviated as: DS) gas, trisilane (Si 3 H 8 , abbreviated as: TS) gas and other silicon hydride gases. As the source gas, one or more of them can be used. As the inert gas, for example, nitrogen gas (N 2 ), argon gas (Ar), helium gas (He), neon gas (Ne), xenon gas (Xe) and other noble gases can be used. As the inert gas, one or more of them can be used. The same applies to each of the steps described later. (Reaction gas supply step: S5, S6) After the source gas supply step is completed, a reaction gas (S5) obtained by exciting plasma is supplied to the wafer 200 in the processing chamber 201. In this step, the opening and closing control of valves 243b to 243d is performed in the same steps as the opening and closing control of valves 243a, 243c, and 243d in step S3. The flow rate of the reaction gas is adjusted by MFC241b and is supplied into the processing chamber 201 from the gas supply hole 250b through the nozzle 249b. At this time, high-frequency power (RF power) is supplied (applied) from the high-frequency power supply 320 to the electrode 300. The reaction gas supplied into the processing chamber 201 is excited into a plasma state inside the processing chamber 201, and is supplied to the wafer 200 as active species and discharged from the exhaust pipe 231. As the processing conditions in this step, the following are exemplified: Processing temperature: room temperature (25˚) to 550 °C, preferably 400 to 500 °C; Processing pressure: 1 to 300 Pa, preferably 10 to 100 Pa; Reaction gas supply flow rate: 0.1 to 10 slm; Reaction gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm; RF power: 50 to 1000 W; RF frequency: 27.12 MHz By exciting the reaction gas into a plasma state under the above conditions and then supplying it to the wafer 200, the first layer formed on the surface of the wafer 200 is modified by the action of ions and electrically neutral active species generated in the plasma, and the first layer is modified into the second layer. When an oxidizing gas (oxidant) such as an oxygen (O)-containing gas is used as the reaction gas, the O-containing gas is excited into a plasma state to generate O-containing active species, and the O-containing active species are supplied to the wafer 200. In this case, by the action of the O-containing active species, the first layer formed on the surface of the wafer 200 is oxidized as a modification treatment. In this case, when the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer. In addition, when a nitriding gas (nitriding agent) such as a nitrogen (N)- and hydrogen (H)-containing gas is used as the reaction gas, the N- and H-containing gas is excited into a plasma state to generate N- and H-containing active species, and the N- and H-containing active species are supplied to the wafer 200. In this case, by the action of the N- and H-containing active species, the first layer formed on the surface of the wafer 200 is nitrided as a modification treatment. In this case, when the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer. After modifying the first layer into the second layer, the valve 243b is closed to stop the supply of the reaction gas. In addition, the RF power supply to the electrode 300 is stopped. Then, the reaction gas, reaction by-products, etc. remaining in the processing chamber 201 are exhausted from the processing chamber 201 using the same processing steps and processing conditions as in step S4. In addition, the valves 243c and 243d are opened to supply an inert gas into the processing chamber 201 (S6). The inert gas functions as a purge gas. As the reaction gas, as described above, for example, an O-containing gas and an N- and H-containing gas can be used. As the O-containing gas, for example, oxygen (O 2 ), nitrous oxide (N 2 O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO 2 ) gas, ozone (O 3 ) gas, hydrogen peroxide (H 2 O 2 ) gas, water vapor (H 2 O), ammonium hydroxide (NH 4 (OH)) gas, carbon monoxide (CO) gas, carbon dioxide (CO 2 ) gas, etc. As the N- and H-containing gas, ammonia (NH 3)、Diamine (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas, and hydrogen nitride gases such as this. As reaction gases, one or more of them can be used. As an inert gas, various gases exemplified in step S4 can be used, for example. (Number of implementation regulations: S7) Regarding the above steps S3, S4, S5, and S6, it is defined as one cycle to perform them non - simultaneously, that is, out of step, in this order, and perform the cycle a specified number of times (n times, where n is an integer of 1 or more), that is, one or more times. Thereby, a film with a specified composition and a specified film thickness can be formed on the wafer 200. Preferably, the above cycle is repeated multiple times. That is, preferably, the thickness of the second layer formed in each cycle is smaller than the desired film thickness, and the above cycle is repeated multiple times until the film thickness of the film formed by stacking the second layers becomes the desired film thickness. In addition, when, for example, a Si - containing layer is formed as the first layer and a SiO layer is formed as the second layer, a silicon oxide film (SiO film) is formed as the film. Further, when, for example, a Si - containing layer is formed as the first layer and a SiN layer is formed as the second layer, a silicon nitride film (SiN film) is formed as the film. (Atmospheric pressure recovery step: S8) After the above film - forming treatment is completed, an inert gas is supplied into the processing chamber 201 from each of the gas supply pipes 232c and 232d, and discharged from the exhaust pipe 231. Thereby, the inside of the processing chamber 201 is purged with the inert gas, and reaction gases and the like remaining in the processing chamber 201 are removed from the processing chamber 201 (inert gas purging). Then, the ambient gas inside the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery: S8). (Unloading Step: S9) Then, the sealing cover 219 is lowered by the susceptor elevator 115 to open the lower end of the manifold 209, and the processed wafer 200 is unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the susceptor 217 (susceptor unloading). After the susceptor unloading, the baffle 219s is moved, and the lower end opening of the manifold 209 is sealed by the baffle 219s via the O-ring 220c (baffle closing). After the processed wafer 200 is unloaded to the outside of the reaction tube 203, it is removed from the susceptor 217 (wafer unloading). In addition, an empty susceptor 217 can be loaded into the processing chamber 201 after the wafer unloading. Here, it is preferable that the pressure inside the furnace during substrate processing is controlled within the range of 10 Pa or more and 300 Pa or less. This is because when the pressure inside the furnace is lower than 10 Pa, the mean free path of gas molecules becomes longer compared to the Debye length of the plasma, and the plasma directly hitting the furnace wall becomes prominent, making it difficult to suppress the generation of fine particles. On the other hand, when the pressure inside the furnace is higher than 300 Pa, the plasma generation efficiency saturates, so even if the reaction gas is supplied, the amount of plasma generated does not change, resulting in a wasteful consumption of the reaction gas, and the mean free path of gas molecules becomes shorter. As a result, the transport efficiency of plasma active species to the wafer deteriorates. (3) Effects Based on the Present Embodiment By arranging the electrode unit divided in the length direction, the electric field generated between the inner wall of the reaction tube 203 near the electrode 300 and the wafer 200 is uniformly strong in the longitudinal direction (the direction of loading the substrate). As a result, the density of the plasma 302 is high and uniformly distributed in the longitudinal direction, enabling the simultaneous improvement of the efficiency, quality, and uniformity between substrates of substrate processing. In addition, a higher frequency power supply can be used, so at least one of ion damage reduction, low electron temperature, and high plasma density can be achieved. Above, the embodiments of the present disclosure have been specifically described. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof. In addition, for example, in the above embodiment, an example of supplying the reactant after supplying the raw material is described. The present disclosure is not limited to such a method, and the supply order of the raw material and the reactant can also be reversed. That is, the raw material can also be supplied after supplying the reactant. By changing the supply order, the film quality and composition ratio of the formed film can be changed. The present disclosure can be applied not only to the case of forming an SiO film or a SiN film on the wafer 200, but also to the case of forming Si-based oxide films such as silicon oxycarbide film (SiOC film), silicon oxycarbonitride film (SiOCN film), and silicon oxynitride film (SiON film) on the wafer 200. For example, in addition to the above gases, or on the basis of these gases, ammonia gas (NH 3 ) nitrogen (N)-containing gases such as, propylene (C 3 H 6 ) carbon (C)-containing gases such as, boron trichloride (BCl 3 ) boron (B)-containing gases such as, etc. are used for film formation. For example, SiN films, SiON films, SiOCN films, SiOC films, SiCN films, SiBN films, SiBCN films, BCN films, etc. can be formed. In addition, the order of inflow of each gas can be appropriately changed. Even in the case of performing these film formations, film formation can be carried out under the same processing conditions as those in the above-described embodiment, and thus the same effects as those in the above-described embodiment can be obtained. In these cases, the above-described reaction gases can be used as the oxidizing agent for the reaction gas. In addition, the present disclosure can also be suitably used in the case of forming a metal oxide film or a metal nitride film containing metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), etc. on the wafer 200. That is, the present disclosure can also be suitably used in the case of forming TiO films, TiOC films, TiOCN films, TiON films, TiN films, TiSiN films, TiBN films, TiBCN films, ZrO films, ZrOC films, ZrOCN films, ZrON films, ZrN films, ZrSiN films, ZrBN films, ZrBCN films, HfO films, HfOC films, HfOCN films, HfON films, HfN films, HfSiN films, HfBN films, HfBCN films, TaO films, TaOC films, TaOCN films, TaON films, TaN films, TaSiN films, TaBN films, TaBCN films, NbO films, NbOC films, NbOCN films, NbON films, NbN films, NbSiN films, NbBN films, NbBCN films, AlO films, AlOC films, AlOCN films, AlON films, AlN films, AlSiN films, AlBN films, AlBCN films, MoO films, MoOC films, MoOCN films, MoON films, MoN films, MoSiN films, MoBN films, MoBCN films, WO films, WOC films, WOCN films, WON films, WN films, WSiN films, WBN films, WBCN films, etc. In these cases, for example, as the source gas, tetrakis(dimethylamino)titanium (Ti[N(CH 3 ) 2 4 , abbreviated as: TDMAT) gas, tetrakis(ethylmethylamino)hafnium (Hf[N(C 2 H 5 )(CH 3 )] 4 , abbreviation: TEMAH) gas, tetra(ethylmethylammonium)zirconium (Zr[N(C 2 H 5 )(CH 3 )] 4 , abbreviation: TEMAZ) gas, trimethylaluminum (Al(CH 3 ) 3 , abbreviation: TMA) gas, titanium tetrachloride (TiCl 4 ) gas, hafnium tetrachloride (HfCl 4 ) gas, etc. That is, the present disclosure can be suitably applied to the case of forming a semimetal film containing a semimetal element and a metal film containing a metal element. The processing steps and processing conditions of these film-forming processes can be set to the same processing steps and processing conditions as those shown in the above-described embodiment. Also in these cases, the same effects as those of the above-described embodiment can be obtained. Regarding the formulation used in the film-forming process, it is preferably prepared separately according to the processing content and stored in the storage device 121c in advance via a telecommunication line or an external storage device 123. Also, preferably, when starting various processes, the CPU 121a appropriately selects an appropriate formulation from a plurality of formulations stored in the storage device 121c according to the processing content. Thereby, it is possible to form thin films of various film types, composition ratios, film qualities, and film thicknesses in a general-purpose and highly reproducible manner in one substrate processing apparatus. In addition, the burden on the operator can be reduced, so that various processes can be started quickly while avoiding operation errors. The above-described formulation is not limited to the case of newly creating it. For example, it can also be prepared by changing an existing formulation already installed in the substrate processing apparatus. In the case of changing the formulation, the changed formulation can be installed in the substrate processing apparatus via a telecommunication line or a recording medium recording the formulation. Alternatively, the input / output device 122 provided in the existing substrate processing apparatus can be operated to directly change the existing formulation installed in the substrate processing apparatus. 31a, 31b: First electrode part 32a, 32b: Second electrode part 201: Processing chamber [FIG. 1] Schematic structural diagram of a vertical processing furnace of a substrate processing apparatus suitable for use in an embodiment of the present disclosure, which is a longitudinal sectional view showing the processing furnace portion. [FIG. 2] Cross-sectional view taken along line A-A in the substrate processing apparatus shown in FIG. 1. [FIG. 3] (a) is a perspective view when the electrode of the embodiment of the present disclosure is disposed in a quartz cover, and (b) is a diagram for showing the positional relationship of the heater, quartz cover, electrode, protrusion of the fixed electrode, and reaction tube of the embodiment of the present disclosure. [FIG. 4] (a) is a perspective view when the electrode of the first modification of the embodiment of the present disclosure is disposed in a quartz cover, and (b) is a diagram for showing the positional relationship of the heater, quartz cover, electrode, protrusion of the fixed electrode, and reaction tube of the first modification of the embodiment of the present disclosure. [FIG. 5] (a) is a front view of the electrode of the embodiment of the present disclosure, and (b) is a diagram for explaining the fixation of the electrode to the quartz cover. [FIG. 6] (a) is a view observed from the front side showing an example of the positional relationship between the electrode unit and the reaction tube of the embodiment of the present disclosure. (b) is a view observed from the upper side showing an example of the positional relationship between the electrode unit and the reaction tube of the embodiment of the present disclosure. (c) is a view observed from the lower side showing an example of the positional relationship between the electrode unit and the reaction tube of the embodiment of the present disclosure. [FIG. 7] (a) is a view observed from the front side showing an example of the positional relationship between the electrode unit and the reaction tube of the first modification of the embodiment of the present disclosure. (b) is a view observed from the upper side showing an example of the positional relationship between the electrode unit and the reaction tube of the first modification of the embodiment of the present disclosure. (c) is a view observed from the lower side showing an example of the positional relationship between the electrode unit and the reaction tube of the first modification of the embodiment of the present disclosure. [FIG. 8] (a) is a view observed from the front side showing another example of the positional relationship between the electrode unit and the reaction tube of the embodiment of the present disclosure. (b) is a cross-sectional view observed from the upper side along line A-A shown in (a). (c) is a cross-sectional view observed from the upper side along line B-B shown in (a). [FIG. 9] (a) is a view observed from the front side showing another example of the positional relationship between the electrode unit and the reaction tube of the first modification of the embodiment of the present disclosure. (b) is a cross-sectional view observed from the upper side along line A-A shown in (a). (c) is a cross-sectional view observed from the upper side along line B-B shown in (a). [FIG. 10] (a) is a view observed from the front side showing another example of the positional relationship between the electrode unit and the reaction tube of the second modification of the embodiment of the present disclosure. (b) is a cross-sectional view observed from the upper side along line A-A shown in (a). (c) is a cross-sectional view observed from the upper side along line B-B shown in (a). [FIG. 11] Schematic structural diagram of a controller in the substrate processing apparatus shown in FIG. 1, which is a block diagram showing an example of the control system of the controller.[Fig. 12] is a flowchart showing an example of a substrate processing process using the substrate processing apparatus shown in Fig. 1. 31a, 31b: First electrode part 32a, 32b: Second electrode part 201: Processing chamber 300-0: Type 0 electrode 300-1: Type 1 electrode

Claims

1. A substrate processing apparatus comprising: a processing chamber for processing a plurality of substrates; and a plasma generation unit having a first electrode portion and a second electrode portion, and generating plasma within the processing chamber, wherein the first electrode portion is configured to extend from a lower portion of the processing chamber toward a central portion of the processing chamber, and the second electrode portion is configured to extend from an upper portion of the processing chamber toward the central portion of the processing chamber; wherein the first electrode portion and the second electrode portion each have a first electrode to which an arbitrary potential is applied and a second electrode to which a reference potential is provided.

2. The substrate processing apparatus as described in claim 1, wherein, The aforementioned plasma generation unit is located in the aforementioned central part of the aforementioned processing chamber, and there is a gap between the aforementioned first electrode part and the aforementioned second electrode part.

3. The substrate processing apparatus as described in claim 1, wherein, It has a plurality of first electrodes to which the aforementioned arbitrary potentials are applied.

4. The substrate processing apparatus as described in claim 3, wherein, The lengths of the aforementioned first electrodes are all the same.

5. The substrate processing apparatus as described in claim 3, wherein, The lengths of the plurality of the aforementioned first electrodes are the same as the lengths of the aforementioned second electrodes.

6. The substrate processing apparatus as described in claim 3, wherein, The lengths of the aforementioned first electrodes are different.

7. The substrate processing apparatus as described in claim 6, wherein, The length of the longer of the aforementioned first electrodes is the same as the length of the aforementioned second electrodes.

8. The substrate processing apparatus as described in claim 3, wherein, The aforementioned first electrode section and the aforementioned second electrode section each have two first electrodes and one second electrode, and are arranged in the order of the aforementioned first electrode, the aforementioned first electrode, and the aforementioned second electrode.

9. The substrate processing apparatus as described in claim 1, wherein, The aforementioned first electrode portion and the aforementioned second electrode portion are provided with a cover for holding the aforementioned first electrode and the aforementioned second electrode.

10. The substrate processing apparatus as described in claim 1, wherein, The aforementioned first electrode portion and the aforementioned second electrode portion are arranged at positions offset from each other along the circumferential direction of the aforementioned processing chamber.

11. The substrate processing apparatus as described in claim 1, wherein, The aforementioned first electrode section and the aforementioned second electrode section are located outside the aforementioned processing chamber.

12. The substrate processing apparatus as described in claim 1, wherein, A heating section having a heating substrate, the aforementioned first electrode section and the aforementioned second electrode section are disposed between the aforementioned processing chamber and the aforementioned heating section.

13. The substrate processing apparatus as described in claim 1, wherein, The aforementioned first electrode and the aforementioned second electrode are in the shape of flat plates.

14. The substrate processing apparatus as described in claim 1, wherein, The aforementioned central portion is the central portion relative to the placement direction in which the aforementioned plurality of substrates are placed.

15. The substrate processing apparatus as described in claim 1, wherein, It has a gas supply unit that supplies processing gas to the aforementioned plurality of substrates.

16. A plasma generation apparatus comprising: a first electrode portion configured to extend from a lower portion of a processing chamber toward a central portion of the processing chamber; and a second electrode portion configured to extend from an upper portion of the processing chamber toward the central portion of the processing chamber; wherein the first electrode portion and the second electrode portion respectively have a first electrode to which an arbitrary potential is applied and a second electrode to which a reference potential is provided.

17. A plasma generation method comprising a process of generating plasma in a processing chamber of a substrate processing apparatus having a first electrode portion and a second electrode portion, wherein the first electrode portion is configured to extend from the lower part of the processing chamber to the central part of the processing chamber, and the second electrode portion is configured to extend from the upper part of the processing chamber to the central part of the processing chamber, wherein the first electrode portion and the second electrode portion respectively have a first electrode to which an arbitrary potential is applied and a second electrode to which a reference potential is provided.

18. A substrate processing method comprising: a process of moving a substrate into a processing chamber; and a process of generating plasma in the processing chamber of a substrate processing apparatus having a first electrode portion and a second electrode portion, wherein the first electrode portion is configured to extend from the lower part of the processing chamber to the center of the processing chamber, and the second electrode portion is configured to extend from the upper part of the processing chamber to the center of the processing chamber, wherein the first electrode portion and the second electrode portion respectively have a first electrode to which an arbitrary potential is applied and a second electrode to which a reference potential is provided.

19. A substrate processing program, wherein a substrate processing apparatus is executed by a computer: a step of moving a substrate into a processing chamber of the substrate processing apparatus; and a step of generating plasma in the processing chamber of the substrate processing apparatus having a first electrode portion and a second electrode portion, wherein the first electrode portion is configured to extend from the lower part of the processing chamber to the center of the processing chamber, and the second electrode portion is configured to extend from the upper part of the processing chamber to the center of the processing chamber, wherein the first electrode portion and the second electrode portion respectively have a first electrode to which an arbitrary potential is applied and a second electrode to which a reference potential is provided.

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