Detection device, calibration microscope, and exposure device

TWI939715BActive Publication Date: 2026-09-21USHIO INC
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Patent Information

Application Number
TW112140530
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2023-01-13
Filing Date
2023-10-24
Publication Date
2026-09-21
Estimated Expiration
2043-10-23

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Abstract

The objective of this invention is to provide a detection device, a calibration microscope, and an exposure device capable of aligning a mask with a workpiece with high precision. The proposed detection apparatus includes a calibration microscope that photographs images of a mask mark and a workpiece mark, respectively, and a position detection unit that detects the positions of the mask mark and the workpiece mark based on these images. The calibration microscope includes an imaging unit, a beam splitter that divides a first light beam and a second light beam, and one or more aberration correction lenses. The beam splitter consists of a first member and a second member connected to each other with a beam splitting plane sandwiched between them, and is configured such that either the incident surface or the exit surface of the first light beam and the second light beam have different orientations relative to the beam splitting plane. The one or more aberration correction lenses include a first aberration correction lens disposed in the first optical path of the first light beam and a second aberration correction lens disposed in the second optical path of the second light beam.
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Description

Detection device, calibration microscope, and exposure device The present invention relates to a detection device, a calibration microscope, and an exposure device that can be applied to the detection of calibration marks. Exposure equipment is used in processes for producing patterns on semiconductor devices, printed circuit boards, or liquid crystal substrates by photolithography. After aligning (calibrating) a patterned mask and the workpiece to which the pattern is to be transferred, the exposure equipment irradiates the workpiece through the mask with exposure light, transferring (exposing) the mask pattern to the workpiece. Patent Documents 1 and 2 disclose an alignment microscope for aligning a mask and a workpiece in the aforementioned exposure apparatus. The alignment microscope photographs the mask mark formed on the mask and the workpiece mark formed on the workpiece. Based on the photographed images of the mask mark and the workpiece mark, the position coordinates of each are calculated. At least one of the mask and the workpiece is moved so that their positions are in a predetermined relationship. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Publication No. 2011-66185 [Patent Document 2] Japanese Patent Application Publication No. 2021-117237 [Problems to be solved by the invention] In recent years, the miniaturization of wiring patterns has been progressing, requiring further improvement in exposure accuracy. Consequently, there is a need to improve the alignment accuracy between the mask and the workpiece. In view of the above situation, the object of the present invention is to provide a detection device, a calibration microscope, and an exposure device that can align the mask and the workpiece with high precision. [Means for Solving the Problem] To achieve the aforementioned objectives, one aspect of the present invention provides an inspection device comprising a calibration microscope and a position detection unit. The calibration microscope is positioned in the optical path of a first light beam directed onto a calibration mark on an exposure mask, i.e., a mask mark, and in the optical path of a second light beam directed onto a calibration mark on a workpiece, i.e., a workpiece mark, and captures an image of the mask mark and an image of the workpiece mark, respectively. The position detection unit detects the positions of the mask mark and the workpiece mark based on the images of the mask mark and the workpiece mark captured by the calibration microscope. Furthermore, the calibration microscope comprises an imaging unit, a beam splitter that splits the first light and the second light and emits them to the imaging unit, and one or more aberration correcting lenses, wherein the beam splitter comprises a light splitting surface that splits the first light and the second light, and a first member and a second member connected to each other with the light splitting surface sandwiched therebetween, and is configured such that the first incident surface where the first light enters, the first exit surface where the first light exits, the second incident surface where the second light enters, and the second exit surface where the second light exits are all oriented in a different direction relative to the light splitting surface. Furthermore, the one or more aberration correcting lenses include one or more first aberration correcting lenses disposed in one or more first light paths, i.e., the light path to the imaging unit for the first light, and one or more second aberration correcting lenses disposed in one or more second light paths, i.e., the light path to the imaging unit for the second light. In this detection device, the beam splitter structure of the calibration microscope employs a structure in which a light-splitting plane, which splits the first and second light beams, is sandwiched between a first component and a second component. This structure allows the light-splitting plane to stably function as a beam splitter for the first and second light beams. Furthermore, because aberration-correcting lenses are positioned in the first and second optical paths, images of the mask mark and the workpiece mark can be captured with high precision, enabling the positions of the mask mark and the workpiece mark to be detected with high precision. Consequently, the exposure mask and the workpiece can be aligned with high precision. The aforementioned spectrometer may be a three-dimensional spectrometer. The spectrometer may be configured such that any one of the first incident surface, the first exit surface, the second incident surface, and the second exit surface has a surface-direction intersection angle of greater than 30 degrees with respect to the light dividing surface. The spectrometer may be configured such that any one of the first incident surface, the first exit surface, the second incident surface, and the second exit surface has a surface direction intersecting at an angle of 45 degrees with respect to the light dividing surface. The spectrometer may be configured such that an intersection angle of the first incident surface with respect to the first optical path is within a range of 75 degrees to 105 degrees. The spectrometer may be configured such that an intersection angle of the first emission surface with respect to the first optical path is within a range of 75 degrees to 105 degrees. The spectrometer may be configured such that an intersection angle of the second incident surface with respect to the second optical path is within a range of 75 degrees to 105 degrees. The spectrometer may be arranged so that the intersection angle of the second emission surface with the second light path is within a range of 75 degrees to 105 degrees. The one or more first aberration correction lenses may be arranged at least one of a position facing the first incident surface and a position facing the first exit surface. In this case, the one or more second aberration correction lenses may be arranged at least one of a position facing the second incident surface and a position facing the second exit surface. The one or more first aberration correction lenses may be disposed at least one of a position facing a common incident surface on which both the first and second light rays are incident, and a position facing a common exit surface on which both the first and second light rays are emitted. In this case, the one or more second aberration correction lenses may be disposed at least one of a position facing the common incident surface and a position facing the common exit surface. The first optical path and the second optical path may have a common optical path. In this case, the one or more aberration correction lenses may include a common correction lens disposed in the common optical path and having the function of the first aberration correction lens and at least one of the functions of the second aberration correction lens. The one or more aberration correction lenses may be formed by the one or more common correction lenses. The common optical path may include the optical paths of the first light and the second light emitted from the beam splitter to the imaging unit. In this case, the one or more common correction lenses may be arranged at a position facing a common emission surface of both the first light and the second light emitted from the beam splitter to the imaging unit along the common optical path. The first member and the second member may be formed of materials having the same refractive index. The first light may be exposure light. In this case, the second light may be non-exposure light. A collimating microscope according to one aspect of the present invention includes an imaging unit, the aforementioned beam splitter, and the aforementioned one or more aberration correcting lenses. An exposure apparatus according to one embodiment of the present invention includes the aforementioned detection device, and further comprises a light emitting unit, a mask stage, and a work stage. The light emitting unit emits the exposure light. The mask stage holds the exposure mask. The work stage holds the workpiece. At least one of the mask stage and the work stage is movable. [Effects of the Invention] As described above, according to the present invention, the mask and the workpiece can be aligned with high precision. Furthermore, the effects described here are not necessarily limited to the effects described in this disclosure, and any effect described in this disclosure may be used. Hereinafter, embodiments of the present invention will be described with reference to the drawings. [Structure of Exposure Apparatus] Fig. 1 is a schematic diagram showing a basic structure of an exposure apparatus according to one embodiment of the present invention. The exposure apparatus 1 includes a light emitting unit 2, a mask stage MS, a work stage WS, a projection lens 3, a collimating microscope 4, a display 5, and a control unit 6. As shown in FIG1 , the optical axis direction of the light emitting portion 2 (the emission direction of the exposure light EL) is referred to as the Z direction, the positive side of the Z axis is referred to as the upper side, and the negative side is referred to as the lower side. Furthermore, the direction perpendicular to the Z direction and extending to the left and right in the figure is referred to as the X direction, the positive side of the X axis is referred to as the right side, and the negative side is referred to as the left side. Furthermore, the depth direction perpendicular to the Z and X directions and perpendicular to the paper is referred to as the Y direction, the positive side of the Y axis is referred to as the deep side, and the negative side is referred to as the front side. Of course, the application of this technology is not limited to the direction in which the exposure device 1 (calibration microscope 4) is arranged. The light emitting portion 2 emits exposure light EL downward. For example, a short-arc mercury lamp is used as the light emitting portion 2. The mercury lamp emits ultraviolet light having wavelengths of, for example, 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). Of course, this structure is not limiting; a lamp emitting light in a wavelength band different from that of ultraviolet light may also be used. Furthermore, a solid-state light source such as an LED (Light Emitting Diode) or LD (Laser Diode) may also be used. The mask stage MS is positioned below the light emitting section 2. The mask stage MS holds an exposure mask (hereinafter referred to simply as a mask) M. In this embodiment, the mask M is positioned perpendicular to the optical axis (Z direction) of the light emitting section 2. A predetermined mask pattern MP is formed on the mask M. Furthermore, an alignment mark (mask mark) MAM is formed on the mask M. The mask mark MAM is also referred to as a mask or an alignment mark. The workpiece stage WS holds the workpiece W. In this embodiment, the workpiece W is positioned perpendicular to the optical axis (Z direction) of the light emitting unit 2. The workpiece stage WS is configured to be capable of linear movement (translational motion) in the horizontal direction (X direction) and the depth direction (Y direction). Furthermore, the workpiece stage WS is configured to be rotatable about the vertical direction (Z direction). By driving the workpiece stage WS, the relative position of the workpiece W with respect to the mask M can be changed. Furthermore, the mask stage MS can be configured to be capable of linear motion in both the horizontal (X) and depth (Y) directions, as well as rotation about the vertical (Z) axis. Alternatively, both the mask stage MS and the workpiece stage WS can be configured to be movable. Furthermore, an alignment mark (workpiece mark) WAM is formed on the workpiece W. The workpiece mark WAM is also referred to as a workpiece alignment mark. In the rotational direction with the left-right direction (X direction), the depth direction (Y direction), and the up-down direction (Z direction) as the rotational axis directions, it is preferable to form three or more mask marks MAM on the mask M in order to align the mask M with the workpiece W. For each of the three or more mask marks MAM, the same number of workpiece marks WAM are formed on the workpiece W. For example, a mask M is used that is rectangular when viewed from the top and bottom (Z direction). In this case, for example, mask marks MAM are formed at the four corners of the mask M. Furthermore, a substrate is arranged as a workpiece W that is rectangular when viewed from the top and bottom (Z direction). Workpiece marks WAM are formed at the four corners of the workpiece W, corresponding to the mask marks MAM formed at the four corners of the mask M. Of course, the present invention is not limited to this configuration. The mask mark MAM and workpiece mark WAM, which correspond to each other, are formed so that when the mask M and the workpiece W are in a desired positional relationship when viewed from the top and bottom (Z direction), they are in a predetermined positional relationship. In this embodiment, the mask mark MAM and workpiece mark WAM, which correspond to each other, are in the same position when the mask M and the workpiece W are in the desired positional relationship. Of course, this is not a limitation, and any other positional relationship may be set as the predetermined positional relationship. As shown in FIG1 , a reflector 8 is embedded in the mounting surface 7 of the work stage WS on which the workpiece W is mounted. The reflector 8 is positioned at a position where the image of the mask mark MAM is projected (the position where the image light of the mask mark MAM is incident) when the exposure light EL is irradiated with the mask M positioned and the workpiece W positioned on the other side. Therefore, in this embodiment, the position at which the reflector 8 is positioned is approximately equal to the position of the workpiece mark WAM when the workpiece W is positioned on the work stage WS. Once the mask M and the workpiece W are aligned, the exposure process begins, and the exposure light EL is emitted from the light emitting section 2. The exposure light EL emitted from the light emitting section 2 passes through the mask M, on which the mask pattern MP is formed, and the projection lens 3, and is irradiated onto the workpiece W coated with photoresist. In this way, the mask pattern MP is projected onto the workpiece W, and the workpiece W is exposed. The alignment microscope 4 is used when aligning the mask M and the workpiece W. The alignment microscope 4 can capture an enlarged image of the mask mark MAM and an enlarged image of the workpiece mark WAM. The collimating microscope 4 has a general cylindrical shape extending in one direction and includes a beam splitter 10 , one or more aberration correction lenses 11 , an objective lens 12 , and an imaging unit 13 therein. The calibration microscope 4 is arranged so that its cylindrical shape extends in the left-right direction (X direction) and is further configured to be movable. Specifically, the beam splitter 10 is configured to be movable from a photographing position (see Figures 2 and 3 ) between the projection lens 3 and the work stage WS (workpiece W) to a retracted position shown in Figure 1 . The calibration microscope 4 is preferably configured to be freely movable in each of the horizontal (X) direction, the depth (Y) direction, and the vertical (Z) direction. However, this configuration is not limiting. As long as the calibration microscope 4 can move between a photographing position and a retracted position, the directions in which it can move may be limited. For example, the calibration microscope 4 may be configured to be movable only in the horizontal (X) direction. Inside the calibration microscope 4, a beam splitter 10, one or more aberration correction lenses 11, an objective lens 12, and an imaging unit 13 are arranged with respect to the imaging optical axis O of the imaging unit 13. For example, a digital camera equipped with an image sensor such as a CCD (Charge Coupled Device) sensor or a CMOS (Complementary Metal-Oxide Semiconductor) sensor can be used as the imaging unit 13. Alternatively, a digital camera combining an imaging lens such as a non-telecentric lens or a telecentric lens with the aforementioned image sensor can be used. Furthermore, an illumination unit 14 is disposed below the beam splitter 10 of the calibration microscope 4. The illumination unit 14 emits non-exposure light NEL downward. For example, a ring-shaped illumination system may be used as the illumination unit 14, and visible light may be emitted as the non-exposure light NEL. Of course, this configuration is not limited to this; a configuration employing a coaxial illumination method may also be employed. The configuration of the calibration microscope 4 will be described in detail later with reference to modified examples. The control unit 6 controls the operation of each block of the exposure apparatus 1. The control unit 6 includes, for example, processors such as a CPU, GPU, and DSP, memory such as RAM and ROM, and storage devices such as HDDs, all necessary computer hardware. In this embodiment, the memory unit 15 is comprised of a non-volatile memory or other storage device. Any non-transitory storage medium readable by a computer may be used to implement the memory unit 15. The processor of the control unit 6 loads the program of the present technology stored in the storage unit 15 and the memory into the RAM and executes it, thereby executing the exposure method including the alignment method (calibration method) of the present technology. As the control unit 6 , for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or another ASIC (Application Specific Integrated Circuit) may be used. In this embodiment, the position detection unit 16 is implemented as a functional block by executing the program of the present technology through the processor of the control unit 6. The position detection unit 16 detects the position of the mask mark MAM and the position of the workpiece mark WAM based on the image of the mask mark MAM and the image of the workpiece mark WAM captured by the imaging unit 13 of the calibration microscope 4. Furthermore, the position detection unit 16 controls the workpiece stage WS based on the detected positions of the mask mark MAM and the workpiece mark WAM, thereby aligning the mask M and the workpiece W so that they are in a desired positional relationship. Specifically, the workpiece stage WS is controlled so that the mask mark MAM and the workpiece mark WAM are in the same position (so that they are in a predetermined positional relationship). This allows for alignment of the mask M and the workpiece W. Of course, the control unit 6 includes functional blocks for executing various exposure controls, but these are not shown in the figure. Furthermore, dedicated hardware such as ICs (integrated circuits) may be used as appropriate to implement the functional blocks including the position detection unit 16. Figures 2 and 3 are schematic diagrams illustrating an example of the detection operation of the calibration mark using the calibration microscope 4. First, as shown in Figure 2 , a mask M is placed on the mask stage MS. For example, the control unit 6 drives a robot arm (not shown) to place the mask M at the reference position before alignment. Of course, the mask M can also be placed by an operator. Note that the workpiece W is not placed on the workpiece stage WS. Therefore, the reflective mirror 8 provided on the mounting surface 7 of the workpiece stage WS is exposed upward. As shown in FIG2 , the calibration microscope 4 moves to a position for photographing the calibration mark. In this embodiment, the photographing position for the calibration mark is set between the projection lens 3 and the workpiece stage WS (workpiece W). The photographing position for the calibration mark is set so that it is located on the optical path of the exposure light EL that irradiates the mask mark MAM and on the optical path of the non-exposure light NEL that irradiates the workpiece mark WAM. As shown in FIG. 2 , in the present embodiment, the exposure light EL irradiated onto the mask mark MAM passes through the projection lens 3 , travels toward the reflection mirror 8 provided on the work stage WS, and is reflected by the reflection mirror 8 and travels upward. The calibration microscope 4 is positioned so that the light dividing plane 18 of the beam splitter 10 is located on the optical path of the exposure light EL directed to the mask mark MAM. In other words, the calibration microscope 4 is positioned so that the exposure light EL directed to the mask mark MAM is incident on the light dividing plane 18 of the beam splitter 10. The optical path of the exposure light EL directed to the mask mark MAM can be referred to as the optical path of the image light of the mask mark MAM. As shown in FIG2 , in this embodiment, the beam splitter 10 is arranged so that the beam splitting plane 18 intersects the optical path of the exposure light EL extending in the vertical direction (Z direction) at an angle of 45 degrees. Specifically, the beam splitter 10 is arranged so that the beam splitting plane 18 is parallel to a direction inclined at 45 degrees from the upper left to the lower right. When the exposure light EL is emitted from the light emitting section 2, the exposure light EL irradiating the mask mark MAM passes through the projection lens 3 and enters the spectrometer 10 from above. The exposure light EL passing through the light dividing surface 18 of the spectrometer 10 and traveling downward is reflected upward by the reflective mirror 8. The exposure light EL reflected upward is incident again on the spectrometer 10. The exposure light EL reflected by the light splitting plane 18 of the spectrometer 10 travels leftward along the horizontal direction (X direction). The exposure light EL passes through the aberration correction lens 11 and the objective lens 12, and is incident on the imaging unit 13. The imaging unit 13 then captures an image of the mask mark MAM. Hereinafter, the optical path of the exposure light EL irradiated onto the mask mark MAM to the imaging unit 13 is referred to as a first optical path OP1. The position detection unit 16 of the control unit 6 detects the position of the mask mark MAM based on the image of the mask mark MAM captured by the imaging unit 13 of the calibration microscope 4. Furthermore, in this embodiment, the position detection unit 16 can capture the image of the mask mark MAM captured by the imaging unit 13 and display it on the display 5. The operator can confirm the detection of the mask mark MAM by visually observing the image of the mask mark MAM displayed on the display 5. In this embodiment, the position detection unit 16 detects the coordinates of the center position of the mask mark MAM as the position of the mask mark MAM. In the example shown in FIG2 , the circular mask mark MAM is detected and the coordinates of its center position are calculated. Of course, the shape of the mask mark MAM or the portion of the mask mark MAM that is calculated as the position of the mask mark MAM is not limited and may be set arbitrarily. To detect the position of the mask mark (MAM), any image recognition technology may be employed, such as image resizing, text recognition, shape recognition, object model image matching, edge detection, and projection transformation. Furthermore, any machine learning algorithm may be employed, such as a DNN (Deep Neural Network), RNN (Recurrent Neural Network), or CNN (Convolutional Neural Network). The image of the mask mark MAM acquired by the position detection unit 16 and the position (center position coordinates) of the mask mark MAM detected by the position detection unit 16 are stored in the storage unit 15 . As shown in FIG3 , the light emitting unit 2 stops emitting the exposure light EL. Then, the workpiece W is placed on the workpiece stage WS. For example, the control unit 6 drives a robot arm (not shown) to position the workpiece W at the pre-alignment reference position. Of course, the operator can also place the workpiece W. The calibration microscope 4 is positioned at the calibration mark imaging position without moving. The illumination unit 14 of the calibration microscope 4 then irradiates the workpiece mark WAM with non-exposure light NEL. The non-exposure light NEL irradiated onto the workpiece mark WAM is reflected by the workpiece mark WAM and enters the spectrometer 10 positioned above the workpiece mark WAM. The non-exposure light NEL incident on the beam splitter 10 is reflected by the light splitting surface 18 and travels leftward along the horizontal direction (X direction). The non-exposure light NEL passes through the aberration correction lens 11 and the objective lens 12, and enters the imaging unit 13. The imaging unit 13 then captures an image of the workpiece mark WAM. Hereinafter, the optical path of the non-exposure light NEL irradiated onto the workpiece mark WAM to the imaging unit 13 is referred to as a second optical path OP2. In this embodiment, the second optical path OP2 of the non-exposure light NEL is equal to the optical path from the reflector 8 to the imaging unit 13 in the first optical path OP1 of the exposure light EL. In other words, the second optical path OP2 of the non-exposure light NEL and the optical path of the exposure light EL from the reflector 8 to the imaging unit 13 form a common optical path. Therefore, when the calibration microscope 4 is positioned at the imaging position of the calibration mark, it is positioned along the optical path of the non-exposure light NEL that is irradiated onto the workpiece mark WAM. The position detection unit 16 of the control unit 6 detects the position of the workpiece mark WAM based on the image of the workpiece mark WAM captured by the imaging unit 13 of the calibration microscope 4. Furthermore, the position detection unit 16 can also capture the image of the workpiece mark WAM captured by the imaging unit 13 and display it on the display 5. This allows the operator to confirm the detection of the workpiece mark WAM by visually observing the image of the workpiece mark WAM displayed on the display 5. As shown in FIG3 , in this embodiment, the coordinates of the center position of the cross-shaped workpiece mark WAM are calculated as the position of the workpiece mark WAM. Of course, the shape of the workpiece mark WAM or the portion of the workpiece mark WAM that is calculated as the position of the workpiece mark WAM is not limited and may be arbitrarily set. For example, the workpiece mark WAM may be formed of the same shape as the mask mark MAM. The image of the workpiece mark WAM acquired by the position detection unit 16 and the position (center position coordinates) of the workpiece mark WAM detected by the position detection unit 16 are stored in the storage unit 15 . The position detection unit 16 controls the work stage WS so that the mask mark MAM and the workpiece mark WAM are in a predetermined positional relationship. In this embodiment, the work stage WS is driven so that the position (center position coordinates) of the mask mark MAM and the position (center position coordinates) of the workpiece mark WAM coincide with each other, thereby controlling the relative position of the workpiece W with respect to the mask M. 1 to 3 illustrate only one alignment microscope 4 positioned for one set of corresponding mask marks MAM and workpiece marks WAM. When forming a plurality of sets of mask marks MAM and workpiece marks WAM, the alignment microscope 4 is used to align the corresponding sets of mask marks MAM and workpiece marks WAM. For example, one calibration microscope 4 is positioned for each corresponding set of mask marks MAM and workpiece marks WAM, capturing images of the mask marks MAM and workpiece marks WAM. This is not limiting; a smaller number (e.g., one) of calibration microscopes 4 than the number of sets of mask marks MAM and workpiece marks WAM may be used to sequentially capture images of the mask marks MAM and workpiece marks WAM. For example, mask marks MAM are formed at the four corners of a rectangular mask M, and workpiece marks WAM are formed at the four corners of a workpiece W formed of a rectangular substrate. In this case, the four calibration microscopes 4 are each positioned on the optical path of the exposure light EL that illuminates the mask marks MAM, and on the optical path of the non-exposure light NEL that illuminates the corresponding workpiece marks WAM, i.e., at the imaging position of the calibration marks. The position detection unit 16 of the control unit 6 detects the positions of the four mask marks MAM and the four workpiece marks WAM. The workpiece stage WS is then controlled so that the four corresponding sets of mask marks MAM and workpiece marks WAM are positioned in predetermined relationships. This allows alignment of the mask M and workpiece W in rotational directions, with the left-right direction (X), the depth direction (Y), and the vertical direction (Z). When the mask M and the workpiece W are aligned, the calibration microscope 4 retreats to the retreat position shown in FIG1 . Of course, the calibration microscope 4 may retreat to the retreat position at other times, such as when the image of the mask mark MAM and the image of the workpiece mark WAM are captured, or when the position detection unit 16 detects the positions of the mask mark MAM and the workpiece mark WAM. In the example shown in FIG3 , non-exposure light NEL is irradiated toward workpiece mark WAM by illumination unit 14 disposed in alignment microscope 4. However, the present invention is not limited thereto, and non-exposure light NEL may be irradiated toward workpiece mark WAM by illumination unit disposed elsewhere in exposure apparatus 1. For example, an illumination unit may be positioned above the beam splitter 10, and non-exposure light NEL may be emitted from the upper side of the beam splitter 10 toward the lower side. In this case, the non-exposure light NEL is emitted downward from the illumination unit and irradiated onto the workpiece mark WAM, where it is reflected upward by the workpiece mark WAM. Even in this situation, an image of the workpiece mark WAM can be captured using the calibration microscope 4 positioned at the imaging position of the calibration mark, as shown in Figures 2 and 3. Alternatively, the exposure light EL and the non-exposure light NEL may be irradiated switchably by the light emitting section 2. Then, the exposure light EL may be irradiated when the mask mark MAM is detected, and the non-exposure light NEL may be irradiated when the workpiece mark WAM is detected. For example, a light source capable of emitting light across a wide wavelength band encompassing both the exposure light EL and the non-exposure light NEL can be provided as the light emitting section 2. Furthermore, a first optical filter that transmits only the exposure light EL and a second optical filter that transmits only the non-exposure light NEL can be interchangeably provided on the light emitting side of the light source. The first optical filter can be provided on the light emitting side when detecting the mask mark MAM, while the second optical filter can be provided on the light emitting side when detecting the workpiece mark WAM. This configuration can also be employed. In this condition, the overall light path of the exposure light EL that is emitted from the light emitting section 2, irradiates the mask mark MAM on the way, and enters the camera section 13 is equal to the overall light path of the non-exposure light NEL that is emitted from the light emitting section 2, irradiates the workpiece mark WAM on the way, and enters the camera section 13. On the other hand, the first optical path OP1 of the exposure light EL after being irradiated onto the mask mark MAM and the second optical path OP2 of the non-exposure light NEL after being irradiated onto the workpiece mark WAM are the same as those shown in FIG. 2 and FIG. 3 . In this embodiment, the mask mark MAM corresponds to one embodiment of the mask mark, which is an alignment mark of the exposure mask of the present invention. The workpiece mark WAM corresponds to one embodiment of the workpiece mark, which is an alignment mark of the workpiece of the present invention. The exposure light EL irradiated onto the mask mark MAM corresponds to one embodiment of the first light of the present invention, and the non-exposure light NEL irradiated onto the workpiece mark WAM corresponds to one embodiment of the second light of the present invention. The spectrometer 10 corresponds to one embodiment of the spectrometer that splits the first and second lights and outputs them to the imaging unit. The light splitting plane 18 of the spectrometer 10 corresponds to one embodiment of the spectrometer that splits the first and second lights. The first optical path OP1 corresponds to one embodiment of the optical path to the imaging unit of the first light, and the second optical path OP2 corresponds to one embodiment of the optical path to the imaging unit of the second light. [Improvement of Calibration Mark Image Accuracy] The inventors of this application have repeatedly studied the accuracy of images of the mask mark MAM and the workpiece mark WAM captured by the calibration microscope 4. Specifically, to improve the accuracy of these two captured images, they have repeatedly studied the structure of the spectrometer 10 mounted on the calibration microscope 4 and the correction of aberrations in the images of the mask mark MAM and the workpiece mark WAM captured by the imaging unit 13 (image sensor). [Sandwich Structure] Figures 4 to 6 are schematic diagrams illustrating an example structure of the spectrometer 10. As illustrated in Figures 4 to 6, in this embodiment, the spectrometer 10 employs a sandwich structure. A sandwich structure is one in which two or more transmissive components sandwich a light-dividing plane 18 for dividing light. This structure can also be referred to as a sandwich structure. The so-called three-dimensional beam splitter is included in the sandwich structure beam splitter 10 of the present technology. The three-dimensional beam splitter can also be called a beam splitter cube. The beam splitter 10 shown in FIG4 has a cubic shape (three-dimensional shape) and is composed of two 45-degree right-angle prisms 20 and 21 connected to each other. The inclined surface of the two right-angle prisms 20 and 21, which forms the connecting surface, constitutes a light-splitting surface 18. Light-splitting surface 18 can be realized, for example, by forming a dielectric multilayer film using a vacuum deposition method. The specific structure and method of forming light-splitting surface 18 are not limited. When the spectrometer 10 shown in FIG. 4 is applied to the alignment microscope 4 shown in FIG. 1 to FIG. 3 , the light dividing plane 18 divides the exposure light EL irradiated onto the mask mark MAM and the non-exposure light NEL irradiated onto the workpiece mark WAM. The spectrometer 10 includes an upper surface 22a and a lower surface 22b facing each other in the vertical direction (Z direction), a left surface 22c and a right surface 22d facing each other in the horizontal direction (X direction), and a front surface 22e and a rear surface (reference numerals omitted) facing each other in the depth direction (Y direction). The upper surface 22a and the lower surface 22b are perpendicular to the vertical direction (Z direction) (intersecting at a 90-degree angle). The left surface 22c and the right surface 22d are perpendicular to the horizontal direction (X direction) (intersecting at a 90-degree angle). The front surface 22e and the rear surface are perpendicular to the depth direction (Y direction) (intersecting at a 90-degree angle). The upper surface 22a of the beam splitter 10 serves as an incident surface 23, through which the exposure light EL irradiating the mask mark MAM enters from above. The lower surface 22b of the beam splitter 10 serves as an exit surface 24, through which the exposure light EL traveling downward after passing through the light splitting surface 18 exits, and the exposure light EL reflected upward from the reflective mirror 8 enters the incident surface 23. The left surface 22c of the beam splitter 10 serves as an exit surface 24, through which the exposure light EL reflected to the left by the light splitting surface 18 exits. The lower surface 22b of the spectrometer 10 serves as an incident surface 25 where the non-exposure light NEL reflected upward and irradiated onto the workpiece mark WAM enters. The left surface 22c of the spectrometer 10 serves as an exit surface 26 where the non-exposure light NEL reflected leftward by the light dividing surface 18 exits. As shown in FIG. 4 , the upper surface 22 a , lower surface 22 b , left surface 22 c , right surface 22 d , front surface 22 e , and rear surface of the beam splitter 10 are configured such that the surface orientation thereof is different from the light dividing surface 18 . That is, the spectrometer 10 is constructed in such a way that any one of the incident surface 23 where the exposure light EL is incident, the exit surface 24 where the exposure light EL is emitted, the incident surface 25 where the non-exposure light NEL is incident, and the exit surface 26 where the non-exposure light NEL is emitted has a surface direction different from that of the light splitting surface 18. As a feature of the spectrometer 10 of the present technology, in addition to having two components connected to each other with a light dividing surface 18 sandwiched therebetween (sandwich structure), it can be cited that any one of the incident surface 23 for incident exposure light EL, the exit surface 24 for exiting exposure light EL, the incident surface 25 for incident non-exposure light NEL, and the exit surface 26 for exiting non-exposure light NEL is constructed in a manner such that the surface orientation is different with respect to the light dividing surface 18 (hereinafter referred to as surface orientation condition). Furthermore, when two surfaces are parallel, the directions of the two surfaces are equal. On the other hand, for two surfaces that are not parallel to each other, the directions of the surfaces are different. Furthermore, for two surfaces with different directions, the intersection angle of the directions can be specified. For example, when two planes intersect, the intersection angle of the two planes can be used as the intersection angle of the plane directions. When the two planes do not intersect, the intersection angle of infinite planes (two infinite planes) including each plane can be used as the intersection angle of the plane directions. For example, the intersection angle of the two planes can be calculated within a range of 0 to 180 degrees for a given rotation direction (either clockwise or counterclockwise) with the intersection line of the two planes (the intersection line of two non-radial planes) as the center. Furthermore, intersection angles of 0 and 180 degrees both correspond to the two planes being parallel. The aforementioned surface orientation condition can also be expressed using the intersection angle of the surface orientations. Specifically, the beam splitter 10 is configured such that the angle of intersection of the incident surface 23 where the exposure light EL enters, the exit surface 24 where the exposure light EL exits, the incident surface 25 where the non-exposure light NEL enters, and the exit surface 26 where the non-exposure light NEL exits, with respect to the light splitting plane 18, is N degrees or greater. This expression is possible. By substituting a specific value for N in "N degrees or more," the surface orientation conditions can be further limited. For example, a spectrometer 10 with N = 30 degrees, or a spectrometer 10 with N values ​​ranging from 30 degrees to 50 degrees, is included in the present invention's sandwich-structured spectrometer 10. Of course, the spectrometer is not limited to these values. For example, when specifying the intersection angle of the surface directions within a range of 0 degrees to 180 degrees relative to a predetermined rotational direction, any value other than 0 degrees and 180 degrees can be used to construct the present invention's spectrometer 10. In the example shown in FIG4 , the beam splitter 10 is configured such that the incident surface 23, where the exposure light EL enters, the exit surface 24, where the exposure light EL exits, the incident surface 25, where the non-exposure light NEL enters, and the exit surface 26, where the non-exposure light NEL exits, all intersect at a 45-degree angle relative to the light splitting plane 18. Therefore, the beam splitter 10 shown in FIG4 has a sandwich structure and satisfies the surface orientation condition. The spectrometer 10 shown in FIG5 does not have a cubic shape (three-dimensional shape). As shown in FIG5 , the upper surface 22a and the lower surface 22b are configured to be parallel to each other. Furthermore, the upper surface 22a and the lower surface 22b are not arranged perpendicular to the vertical direction (Z direction), and the left side thereof is offset downward. Furthermore, the left surface 22c and the right surface 22d are parallel to each other. On the other hand, the left and right surfaces 22c and 22d are not perpendicular to the horizontal direction (X direction), and the lower side is offset to the left. This shape of the beam splitter 10 also has a sandwich structure and satisfies the surface orientation requirements. Furthermore, the orientations of the upper surface 22a, lower surface 22b, left surface 22c, right surface 22d, front surface 22e, and rear surface of the beam splitter 10 shown in FIG6 have been further modified. The upper surface 22a and lower surface 22b are not parallel to each other, but intersect at different angles with respect to the vertical direction (Z direction). The left surface 22c and right surface 22d are also not parallel to each other, but intersect at different angles with respect to the horizontal direction (X direction). Furthermore, the light splitting plane 18 intersects at an angle other than 45 degrees with respect to the vertical direction (Z direction). Therefore, it is difficult to apply the beam splitter 10 shown in FIG6 to the calibration microscope 4 shown in FIG1 to FIG3. On the other hand, by appropriately configuring one or more aberration-correcting lenses 11, objective lenses 12, and imaging units 13 in accordance with the angle of the light splitting plane 18 shown in FIG6, it can be used as the calibration microscope 4 of the present technology. Therefore, the spectrometer 10 shown in Figure 6 also has a sandwich structure and satisfies the plane orientation condition. Furthermore, the spectrometer 10 shown in Figures 5 and 6 can also be understood as a type of three-dimensional spectrometer. Of course, the structure of the spectrometer 10 of the present technology is not limited to the structure shown in Figures 4 to 6. For example, the front surface 22e and the rear surface 22e may be arranged at different intersection angles with respect to the depth direction (Y direction). Furthermore, there is no limitation on which surface of the spectrometer 10 is designated as the incident surface 23 for the exposure light EL, the exit surface 24 for the exposure light EL, the incident surface 25 for the non-exposure light NEL, or the exit surface 26 for the non-exposure light NEL; any setting may be made. Typically, the two members sandwiching the light dividing surface 18 are made of materials having the same refractive index, but the present invention is not limited to this structure. In the examples shown in Figures 4 to 6, the right-angle prisms 20 and 21 correspond to one embodiment of the first and second members of the present technology. Whether one of the two members is the first member (the second member) is not limited and can be set arbitrarily. The incident surface 23, on which the exposure light EL is incident, corresponds to one embodiment of the first incident surface on which the first light is incident. The exit surface 24, from which the exposure light EL is emitted, corresponds to one embodiment of the first exit surface from which the first light is emitted. The incident surface 25, on which the non-exposure light NEL is incident, corresponds to one embodiment of the second incident surface on which the second light is incident. The exit surface 26, from which the non-exposure light NEL is emitted, corresponds to one embodiment of the second exit surface from which the second light is emitted. [Aberration of the Images of the Mask Mark MAM and Workpiece Mark WAM] When using the sandwich-structured beam splitter 10 shown in Figures 4 to 6, right-angle prisms 20 and 21 are disposed within the first optical path OP1 and the second optical path OP2. Specifically, a thick member having a refractive index different from that of air is disposed within the first optical path OP1 and the second optical path OP2. Because the exposure light EL irradiated onto the mask mark WAM and the non-exposure light NEL irradiated onto the workpiece mark WAM travel inside the right-angle prisms 20 and 21, there are often cases where aberration occurs in the images of the mask mark MAM and the workpiece mark WAM formed by the imaging unit 13. Furthermore, in this disclosure, deviations from the images of the mask mark MAM and the workpiece mark WAM formed by an ideal imaging system are referred to as aberrations. For example, the optical path lengths of the exposure light EL and non-exposure light NEL traveling inside the right-angle prisms 20 and 21 are increased compared to when traveling in air. This may cause image blurring due to deviations in the focus position (hereinafter referred to as focus deviation). Furthermore, there is a possibility of the occurrence of monochromatic aberrations such as spherical aberration, coma, astigmatism, field curvature, distortion (distortion), and chromatic aberrations such as axial chromatic aberration and lateral chromatic aberration. When such aberration occurs, the imaging performance of the image of the mask mark MAM and the image of the workpiece mark WAM is reduced, resulting in a reduction in the imaging accuracy of the image of the mask mark MAM and the image of the workpiece mark WAM. [Intersection angle of the incident surface and the exit surface of the light path] When using the spectrometer 10 having the sandwich structure shown in Figures 4 to 6, in order to suppress the aberration of the images of the mask mark MAM and the workpiece mark WAM, the incident surfaces 23 and 25 of the exposure light EL and the non-exposure light NEL are preferably arranged perpendicular to the first light path OP1 and the second light path OP2. For example, the incident surface 23 of the exposure light EL is arranged so that the intersection angle with the first optical path OP1 is within the range of 75 to 105 degrees. Furthermore, the incident surface 25 of the non-exposure light NEL is arranged so that the intersection angle with the second optical path OP2 is within the range of 75 to 105 degrees. This can suppress aberrations in the images of the mask mark MAM and the workpiece mark WAM. If the incident surface 23 of the exposure light EL is arranged at a 90-degree intersection angle with the first optical path OP1, the aberration suppression effect can be further exerted. Similarly, if the incident surface 25 of the non-exposure light NEL is arranged at a 90-degree intersection angle with the second optical path OP2, the aberration suppression effect can be further exerted. Furthermore, in order to suppress aberration of the images of the mask mark MAM and the workpiece mark WAM, it is preferable that the emission surfaces 24 and 26 of the exposure light EL and the non-exposure light NEL are arranged perpendicular to the first optical path OP1 and the second optical path OP2. For example, the exit surface 24 of the exposure light EL is arranged so that the intersection angle with the first optical path OP1 is within the range of 75 to 105 degrees. Furthermore, the exit surface 26 of the non-exposure light NEL is arranged so that the intersection angle with the second optical path OP2 is within the range of 75 to 105 degrees. This can suppress aberrations in the images of the mask mark MAM and the workpiece mark WAM. If the emission surface 24 of the exposure light EL is arranged at a 90-degree intersection angle with the first optical path OP1, the aberration suppression effect can be further exerted. Similarly, if the emission surface 26 of the non-exposure light NEL is arranged at a 90-degree intersection angle with the second optical path, the aberration suppression effect can be further exerted. [Arrangement of Aberration Correction Lenses] In the collimating microscope 4 of the present embodiment, one or more aberration correction lenses 11 are arranged to correct (cancel) aberrations. In order to correct the aberration of the image of the mask mark MAM, one or more first aberration correction lenses 28 are arranged in the first optical path OP1 as one or more aberration correction lenses 11. In addition, in order to correct the aberration of the image of the workpiece mark WAM, one or more second aberration correction lenses 29 are arranged in the second optical path OP2 as one or more aberration correction lenses 11. Figures 7 to 11 are schematic diagrams illustrating an example arrangement of the aberration correction lens 11. In the examples shown in Figures 7 to 11, a CCD camera is used as the imaging unit 13. Furthermore, the objective lens 12 is schematically illustrated as comprising two lenses. Furthermore, when an imaging system including an imaging lens such as a non-telecentric lens is used as the imaging unit 13, the imaging system is positioned between the CCD camera and the objective lens 12. Taking the collimating microscope 4 shown in FIG. 1 to FIG. 3 and the beam splitter 10 shown in FIG. 4 as an example, an arrangement example of one or more first aberration correcting lenses 28 and one or more second aberration correcting lenses 29 will be described. 7 , two aberration correction lenses 11a and 11b are disposed facing the upper surface 22a of the beam splitter 10. Furthermore, two aberration correction lenses 11c and 11d are disposed facing the left surface 22c of the beam splitter 10. The two aberration correction lenses 11a and 11b and the two aberration correction lenses 11c and 11d are arranged in the first optical path OP1 of the exposure light EL. Therefore, the two aberration correction lenses 11a and 11b and the two aberration correction lenses 11c and 11d function as the first aberration correction lens 28 for correcting the aberration of the image of the mask mark MAM. Furthermore, the two aberration correction lenses 11c and 11d are also arranged in the second optical path OP2 of the non-exposure light NEL. Therefore, the two aberration correction lenses 11c and 11d also function as the second aberration correction lens 29 for correcting the aberrations of the image of the workpiece mark WAM. In other words, the two aberration correction lenses 11c and 11d serve as both the first aberration correction lens 28 and the second aberration correction lens 29. In the example shown in FIG7 , a first aberration correction lens 28 is disposed at a position facing the incident surface 23 (upper surface 22a) of the exposure light EL and at a position facing the exit surface 24 (left surface 22c) of the exposure light EL. Furthermore, a second aberration correction lens 29 is disposed at a position facing the exit surface 26 (left surface 22c) of the non-exposure light NEL. In the example shown in FIG7 , the left surface 22 c of the beam splitter 10 serves as the surface from which both the exposure light EL and the non-exposure light NEL are emitted (hereinafter referred to as the common emission surface). Therefore, the example shown in FIG7 can be said to be a structure in which the first aberration correction lens 28 and the second aberration correction lens 29 are arranged at positions facing the common emission surface (left surface 22 c). As described above, the second optical path OP2 serves as a common optical path for both the exposure light EL and the non-exposure light NEL. The example shown in FIG7 can be said to be a structure in which an aberration correction lens (hereinafter referred to as a common correction lens) having both the functions of the first aberration correction lens 28 and the second aberration correction lens 29 is arranged in the common optical path. Furthermore, the example shown in Figure 7 can also be said to be a structure in which two common correction lenses (aberration correction lenses 11c and 11d) are arranged at a position opposite to the common output surface (left surface 22c) from which both the exposure light EL and the non-exposure light NEL that travel from the spectrometer 10 toward the camera unit 13 in a common light path are output. By disposing a common correction lens as one or more aberration correction lenses 11 , the number of aberration correction lenses 11 can be reduced, thereby achieving miniaturization of the device, simplification of design, and reduction of component costs. Furthermore, the aberration correction lens 11 disposed in the common optical path is not necessarily limited to being designed as a common correction lens. Furthermore, even though disposed in the common optical path, the lens design may be such that only the first aberration correction lens 28 functions. In this case, a lens design that minimizes the effect on the non-exposure light NEL is preferred. Furthermore, even though disposed in the common optical path, the lens design may be such that only the second aberration correction lens 29 functions. In this case, a lens design that minimizes the effect on the exposure light EL is preferred. In the example shown in Figure 8 , one aberration correction lens 11a is positioned facing the upper surface 22a of the beam splitter 10. Furthermore, one aberration correction lens 11e is positioned facing the lower surface 22b of the beam splitter 10. Furthermore, two aberration correction lenses 11c and 11d are positioned facing the left surface 22c of the beam splitter 10. The aberration correction lens 11a, the aberration correction lens 11e, and the two aberration correction lenses 11c and 11d are arranged in the first optical path OP1 of the exposure light EL. Therefore, the aberration correction lens 11a, the aberration correction lens 11e, and the two aberration correction lenses 11c and 11d function as the first aberration correction lens 28 for correcting the aberration of the image of the mask mark MAM. The aberration correction lens 11e and the two aberration correction lenses 11c and 11d are arranged in the second optical path OP2 of the non-exposure light NEL. Therefore, the aberration correction lens 11e and the two aberration correction lenses 11c and 11d function as the second aberration correction lens 29 for correcting the aberrations of the image of the workpiece mark WAM. Therefore, the aberration correction lens 11e and the two aberration correction lenses 11c and 11d serve as both the first aberration correction lens 28 and the second aberration correction lens 29. In the example shown in FIG8 , a first aberration correction lens 28 is disposed at a position facing the incident surface 23 (upper surface 22a and lower surface 22b) of the exposure light EL and at a position facing the exit surface 24 (lower surface 22b and left surface 22c) of the exposure light EL. Furthermore, a second aberration correction lens 29 is disposed at a position facing the incident surface 25 (lower surface 22b) of the non-exposure light NEL and at a position facing the exit surface 26 (left surface 22c) of the non-exposure light NEL. Furthermore, in FIG8 , the lower surface 22 b of the beam splitter 10 serves as the surface upon which both the exposure light EL and the non-exposure light NEL are incident (hereinafter referred to as the common incident surface). Therefore, the example shown in FIG8 can be said to be a structure in which the first aberration correction lens 28 and the second aberration correction lens 29 are arranged facing the common incident surface (lower surface 22 b ) and facing the common exit surface (left surface 22 c ). 8 can be said to be a structure in which a common correction lens (aberration correction lenses 11 c to 11 e ) having the function of the first aberration correction lens 28 and the function of the second aberration correction lens 29 is arranged in the common optical path. Furthermore, the example shown in Figure 8 can also be said to be a structure in which two common correction lenses (aberration correction lenses 11c and 11d) are arranged at a position opposite to the common output surface (left surface 22c) from which both the exposure light EL and the non-exposure light NEL that travel from the spectrometer 10 toward the camera unit 13 in a common light path are output. 9 , two aberration correction lenses 11e and 11f are disposed facing the lower surface 22b of the beam splitter 10. Furthermore, two aberration correction lenses 11c and 11d are disposed facing the left surface 22c of the beam splitter 10. The two aberration correction lenses 11e and 11f and the two aberration correction lenses 11c and 11d are arranged in the first optical path OP1 of the exposure light EL and the second optical path OP2 of the non-exposure light NEL. Therefore, the two aberration correction lenses 11e and 11f and the two aberration correction lenses 11c and 11d function as common correction lenses, functioning both as the first aberration correction lens 28 and as the second aberration correction lens 29. In other words, the example shown in FIG9 is a structure in which one or more aberration correction lenses 11 are formed by four common correction lenses. 9 can be said to be a structure in which the common correction lenses (aberration correction lenses 11c to 11f) are arranged at positions facing the common incident surface (lower surface 22b) and at positions facing the common emission surface (left surface 22c). In addition, the example shown in Figure 9 can also be said to be a structure in which two common correction lenses (aberration correction lenses 11c and 11d) are arranged at a position opposite to the common output surface (left surface 22c) from which both the exposure light EL and the non-exposure light NEL that travel from the spectrometer 10 toward the camera unit 13 in a common light path are output. By configuring all of the one or more aberration correction lenses 11 to be common correction lenses, it is more advantageous in terms of miniaturization of the device, simplification of the design, and reduction of component costs. In the example shown in FIG. 10 , two aberration correction lenses 11 c and 11 d are arranged at positions facing the left surface 22 c of the beam splitter 10 . The two aberration correction lenses 11c and 11d are arranged in the first optical path OP1 of the exposure light EL and the second optical path OP2 of the non-exposure light NEL. Therefore, the two aberration correction lenses 11c and 11d function as common correction lenses, functioning both as the first aberration correction lens 28 and as the second aberration correction lens 29. In other words, the example shown in FIG10 is a structure in which one or more aberration correction lenses 11 are formed by two common correction lenses. 10 can be said to be a structure in which the common correction lens (aberration correction lenses 11 c and 11 d ) is arranged at a position facing the common emission surface (left surface 22 c ). In addition, the example shown in Figure 10 can also be said to be a structure in which two common correction lenses (aberration correction lenses 11c and 11d) are arranged at a position opposite to the common output surface (left surface 22c) from which both the exposure light EL and the non-exposure light NEL that travel from the spectrometer 10 toward the camera unit 13 in a common light path are output. In the example shown in FIG. 11 , two aberration correction lenses 11 e and 11 f are arranged at positions facing the lower surface 22 b of the beam splitter 10 . The two aberration correction lenses 11e and 11f are arranged in the first optical path OP1 of the exposure light EL and the second optical path OP2 of the non-exposure light NEL. Therefore, the two aberration correction lenses 11e and 11f function as common correction lenses, functioning both as the first aberration correction lens 28 and as the second aberration correction lens 29. In other words, the example shown in FIG11 is a structure in which one or more aberration correction lenses 11 are formed by two common correction lenses. 11 can be said to be a structure in which the common correction lens (aberration correction lenses 11e and 11f) is arranged at a position facing the common incident surface (lower surface 22b). The specific lens design of the aberration correction lens 11 (first aberration correction lens 28, second aberration correction lens 29) is not limited and can be arbitrarily designed to suit the type of aberration to be corrected. For example, when focus correction is desired, an aberration correction lens with positive power is used. This allows the focus position to be returned to the front by the amount that it has shifted farther away due to an increase in the optical path length, thereby correcting for focus deviation. This lens design is not limited, and any optical lens such as a biconvex lens, a biconcave lens, a plano-convex lens, a plano-concave lens, a convex meniscus lens, or a concave meniscus lens may be used as the aberration correction lens 11. Furthermore, the shape of the lens surface is not limited, and any spherical or aspherical shape may be designed. For example, increasing the number of aberration correction lenses 11 arranged in the first optical path OP1 and the second optical path OP2 can improve the accuracy of correction for specific aberrations, allowing for correction of multiple types of aberrations. Furthermore, by arranging two or more aberration correction lenses 11, it is also possible to recover from changes in magnification. In other words, in addition to correcting aberrations, magnification correction is also possible. Furthermore, this change in magnification is also included in aberrations (hereinafter referred to as lateral aberration). On the other hand, reducing the number of aberration correction lenses 11 can achieve device miniaturization, simplified design, and reduced component costs. For example, by narrowing the aberrations to be corrected, the number of aberration correction lenses 11 can also be reduced. For example, by setting priorities for the aberrations you want to correct, you can narrow down the aberrations with the highest priority to be corrected. For example, you can set the highest priority for correction of focus deviation. Then, you can set the priority of chromatic aberration correction to one level lower, and the priority of lateral aberration correction to another level lower. Other aberrations are excluded from the correction targets. To determine this priority, the lens design, number, and placement of the aberration correction lens 11, which has at least one aberration, can be appropriately determined. For example, only the highest-priority aberrations can be corrected, and the aberration correction lens configuration can be determined. Alternatively, multiple aberrations can be selected in order of priority as the correction targets, and the aberration correction lens 11 configuration can be determined. A variety of designs are possible. Regarding the position of the aberration correction lens 11, as shown in Figures 7 to 11, various settings can be made, such as the position between the projection lens 3 and the spectrometer 10, the position between the spectrometer 10 and the workpiece stage WS (workpiece W), and the position between the spectrometer 10 and the camera unit 13. The exposure light EL and the non-exposure light NEL have different wavelengths. Therefore, a first aberration correction lens 28 corresponding to at least one wavelength of the exposure light EL is disposed in the first optical path OP1. Furthermore, a second aberration correction lens 29 corresponding to at least one wavelength of the non-exposure light NEL is disposed in the second optical path OP2. This improves the accuracy of aberration correction. On the other hand, as illustrated in Figures 7 to 11, even if a common correction lens that functions as the first aberration correction lens 28 and the second aberration correction lens 29 is used, aberrations can be fully corrected for both the exposure light EL and the non-exposure light NEL. The configuration of the aberration correction lens 11 can also be determined by taking into account the number of times the exposure light EL irradiating the mask mark MAM and the non-exposure light NEL irradiating the workpiece mark WAM pass through the interior of the beam splitter 10. For example, if the exposure light EL passes through the interior of the beam splitter 10 N times, one or more aberration correction lenses 11 can be configured to correct N times of aberration. This improves the accuracy of aberration correction. For example, a set of at least one aberration correction lens 11 is configured to correct the primary aberrations generated by passing through the beam splitter 10 once. When the exposure light EL passes through the beam splitter 10 N times, the same N sets are arranged along the first optical path OP1 of the exposure light EL. Similarly, for the non-exposure light NEL, the same number of sets as the number of times the light has passed through the beam splitter 10 are arranged along the second optical path OP2 of the non-exposure light NEL. This improves the accuracy of aberration correction. For example, in the example shown in Figure 11, a pair of aberration correction lenses 11e and 11d are used to correct primary aberrations. Exposure light EL passes through the interior of the secondary beam splitter 10 and then through the two secondary aberration correction lenses 11e and 11d. Furthermore, non-exposure light NEL passes through the interior of the primary beam splitter 10 and then through the two primary aberration correction lenses 11e and 11d. As a result, secondary aberrations of the exposure light EL are corrected with high precision. Furthermore, primary aberrations of the non-exposure light NEL are corrected with high precision. The objective lens 12 may also have the function of the aberration correction lens 11 (the function of the first aberration correction lens 28 or the function of the second aberration correction lens 29). This facilitates, for example, miniaturization of the device. In this case, the objective lens 12 becomes one embodiment of the aberration correction lens (the first aberration correction lens or the second aberration correction lens) of the present invention. 1 to 3 , the alignment microscope 4 and the position detector 16 of the control unit 6 are components having functions as one embodiment of the detection device of the present invention. That is, the exposure apparatus 1 can be said to be an exposure apparatus equipped with the detection device of the present invention. The detection device of the present invention may be integrated with the exposure apparatus 1. Alternatively, a detection device including the calibration microscope 4 and the position detection unit 16 may be configured separately from the exposure apparatus 1. The detection device may then be appropriately assembled with the exposure apparatus 1. Alternatively, only the calibration microscope 4 may be assembled to the exposure apparatus 1 so that it can be replaced. As described above, in the exposure apparatus 1 (inspection apparatus) of this embodiment, the structure of the beam splitter 10 included in the collimating microscope 4 adopts a sandwich structure, in which the light splitting plane 18 for splitting the exposure light EL and the non-exposure light NEL is sandwiched between the right-angle prism 20 and the right-angle prism 21. This allows the light splitting plane 18 to stably perform its function of splitting the exposure light EL and the non-exposure light NEL. For example, a thin-film type spectrometer is used as a spectrometer. Because of its thin film structure, a thin-film type spectrometer is susceptible to vibration when subjected to cooling air, etc. This results in a decrease in the accuracy of the images of the mask mark MAM and the workpiece mark WAM, enabling high-precision alignment. In this embodiment, a spectrometer 10 having a sandwich structure as shown in FIG4 is used. This can sufficiently prevent the light dividing surface 18 from vibrating, and can stably exhibit the light dividing function. Furthermore, in the exposure apparatus 1 (detection apparatus) of this embodiment, since the aberration correction lens 11 is disposed in the first optical path OP1 and the second optical path OP2, it is possible to capture images of the mask mark MAM and the workpiece mark WAM with high precision, and to detect the positions of the mask mark and the workpiece mark with high precision. As a result, the exposure mask M and the workpiece W can be aligned with high precision. Thus, in the exposure apparatus 1 (detection apparatus) of this embodiment, since aberrations can be sufficiently suppressed without being affected by the vibration of the light dividing plane 18, the imaging performance of the imaging unit 13 can be improved, and calibration can be performed with high precision. Furthermore, a high-quality image of the calibration mark can be displayed on the display 5, and confirmation by the operator can also be performed with high precision. <Other Embodiments> The present invention is not limited to the above-described embodiments, and various other embodiments are possible. By performing exposure using the exposure apparatus of the present invention, various substrates with predetermined patterns formed thereon can be manufactured as parts. For example, parts such as circuit components, optical components, MEMS, recording devices, sensors, and molds can be manufactured. Examples of circuit components include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, as well as semiconductor devices such as LSIs, CCDs, image sensors, and FPGAs. Examples of molds include imprinting molds. The detection device and alignment microscope of the present invention are not limited to exposure devices. They can also be used to detect alignment marks in optical processing devices such as laser processing devices. Furthermore, the detection device and alignment microscope of the present invention can be applied to any light irradiation device that uses alignment marks for mutual alignment. In the foregoing, the collimating microscope 4 is described as a single unit, comprising the beam splitter 10, one or more aberration-correcting lenses 11, the objective lens 12, and the imaging unit 13. This is not limiting; provided that normal exposure processing is not hindered, any of the components, including the beam splitter 10, one or more aberration-correcting lenses 11, the objective lens 12, and the imaging unit 13, may be fixed to the exposure apparatus 1. For example, the imaging unit 13 and the objective lens 12 may be fixed, while the unit comprising the beam splitter 10 and one or more aberration-correcting lenses 11 may be movable. Furthermore, various other configurations are possible. The structures of the exposure apparatus, detection apparatus, collimating microscope, spectrometer, aberration correction lens, control unit, and the like described with reference to the drawings are merely exemplary embodiments and may be modified as desired without departing from the spirit of the present technology. In other words, any other suitable structure for implementing the present technology may be employed. In the present invention, in order to facilitate understanding of the description, the terms "approximately", "almost", "about", etc. are used as appropriate. On the other hand, the use or non-use of the terms "approximately", "almost", "approximately" does not represent a clear difference in the provisions. That is, in the present invention, the concepts of "center", "center", "uniform", "equal", "same", "orthogonal", "parallel", "symmetrical", "extended", "axial direction", "cylindrical shape", "cylindrical shape", "annular shape", "annular shape", etc., such as the prescribed shape, size, positional relationship, state, etc., are included as concepts such as "substantially center", "substantially center", "substantially uniform", "substantially equal", "substantially the same", "substantially orthogonal", "substantially parallel", "substantially symmetrical", "substantially extended", "substantially axial direction", "substantially cylindrical shape", "substantially cylindrical shape", "substantially annular shape", "substantially annular shape", etc. For example, this also includes states within a predetermined range (e.g., a range of ±10%) based on criteria such as "perfectly centered," "perfectly central," "perfectly uniform," "perfectly equal," "completely identical," "perfectly orthogonal," "perfectly parallel," "perfectly symmetrical," "perfectly extended," "perfectly axially oriented," "perfectly cylindrical," "perfectly annular," and "perfectly circular." Therefore, even in situations where terms such as "approximately," "almost," or "approximately" are not used, concepts that could be expressed using terms such as "approximately," "almost," or "approximately" are included. Conversely, states expressed using terms such as "approximately," "almost," or "approximately" do not necessarily exclude states that are completely perfect. In the present invention, expressions such as "greater than A (larger than A)" and "less than A (smaller than A)" are expressions that encompass both conditions equivalent to A and conditions not equivalent to A. For example, "greater than A" is not limited to conditions not equivalent to A but also includes "A or greater." Furthermore, "less than A" is not limited to "less than A" but also includes "less than A." When implementing this technology, specific settings may be appropriately adopted based on the concepts encompassed by "greater than A" and "less than A" to achieve the effects described above. At least two of the characteristic features of the present technology described above may be combined. That is, the various characteristic features described in each embodiment do not distinguish between the embodiments and may be combined in any manner. Furthermore, the various effects described above are merely illustrative and not limiting, and other effects may also be achieved. 1: Exposure device 2: Light output unit 3: Projection lens 4: Collimating microscope 5: Display 6: Control unit 7: Mounting surface 8: Reflecting mirror 10: Beam splitter 11: Aberration correction lens 11a: Aberration correction lens 11b: Aberration correction lens 11c: Aberration correction lens 11d: Aberration correction lens 11e: Aberration correction lens 11f: Aberration correction lens 12: Objective lens 13: Image pickup unit 14: Illumination unit 15: Memory unit 16: Position detection unit 18: Light splitting surface 20: Right-angle prism 21: Right-angle prism 22a: Upper surface 22b: Lower surface 22c: Left surface 22d: Right surface 22e: Front surface 23: Incident surface (surface where exposure light enters) 24: Exit surface (surface where exposure light exits) 25: Incident surface (surface where non-exposure light enters) 26: Exit surface (surface where non-exposure light exits) 28: First aberration correction lens 29: Second aberration correction lens EL: Exposure light M: Mask (exposure mask) MAM: Mask mark MP: Mask pattern MS: Mask stage NEL: Non-exposure light OP1: First light path OP2: Second light path W: Workpiece WAM: Workpiece mark WS: Workpiece stage [Figure 1] A schematic diagram showing an example of the basic structure of an exposure device according to an embodiment of the present invention. [Figure 2] A schematic diagram showing an example of detection of a calibration mark using a calibration microscope (detection of a mask mark). [Figure 3] A schematic diagram showing an example of detection of a calibration mark using a calibration microscope (detection of a workpiece mark). [Figure 4] A schematic diagram showing an example of the structure of a spectrometer. [Figure 5] A schematic diagram showing an example of the structure of a spectrometer. [Figure 6] A schematic diagram showing an example of the structure of a spectrometer. [Figure 7] A schematic diagram showing an example of the configuration of an aberration correction lens. [Figure 8] A schematic diagram showing an example of the configuration of an aberration correction lens. [Figure 9] A schematic diagram showing an example of the configuration of an aberration correction lens. [Figure 10] A schematic diagram showing an example of the configuration of an aberration correction lens. [Figure 11] A schematic diagram showing an example of the configuration of an aberration correction lens. 10: Optical Splitter 11a: Aberration Correction Lens 11b: Aberration correction lens 11c: Aberration correction lens 11d: Aberration correction lens 12: Objective lens 13: Camera Department 22a: Upper side 22c: Left 28: 1st aberration correction lens 29: Second aberration correction lens OP1: 1st optical path OP2: Second optical path

Claims

1. A detection apparatus, characterized by comprising: a calibration microscope disposed in the light path of a first light illuminating a calibration mark (i.e., a mask mark) of an exposure mask, and in the light path of a second light illuminating a calibration mark (i.e., a workpiece mark) of a workpiece, for photographing images of the mask mark and the workpiece mark respectively; and a position detection unit that detects the position of the mask mark and the position of the workpiece mark based on the images of the mask mark and the workpiece mark photographed by the calibration microscope, wherein the calibration microscope includes an imaging unit, a beam splitter that splits the first light and the second light and emits them to the imaging unit, and one or more aberration correction lenses. The aforementioned beam splitter has a light splitting surface that splits the aforementioned first light and the aforementioned second light, and a first member and a second member that are connected to each other with the aforementioned light splitting surface sandwiched between them. It is configured such that the first incident surface into which the aforementioned first light is incident, the first exit surface into which the aforementioned first light is emitted, the second incident surface into which the aforementioned second light is incident, and the second exit surface into which the aforementioned second light is emitted are all arranged in a manner in which the surface direction is different from the aforementioned light splitting surface. The aforementioned one or more aberration correction lenses include one or more first aberration correction lenses disposed on the optical path (i.e., the first optical path) up to the aforementioned imaging unit of the aforementioned first light, and one or more second aberration correction lenses disposed on the optical path (i.e., the second optical path) up to the aforementioned imaging unit of the aforementioned second light.

2. The detection device as described in claim 1, wherein, The aforementioned beam splitter is a three-dimensional beam splitter.

3. The detection device as described in claim 1, wherein, The aforementioned beam splitter is configured such that any one of the aforementioned first incident surface, the aforementioned first exit surface, the aforementioned second incident surface, and the aforementioned second exit surface has an intersection angle of more than 30 degrees with respect to the aforementioned beam splitting surface.

4. The detection device as described in claim 1, wherein, The aforementioned beam splitter is configured such that any of the aforementioned first incident surface, the aforementioned first exit surface, the aforementioned second incident surface, and the aforementioned second exit surface are arranged such that the intersection angle of the surface direction with respect to the aforementioned beam splitting surface is 45 degrees.

5. The detection device as described in claim 1, wherein, The aforementioned beam splitter is configured such that the intersection angle between the aforementioned first incident surface and the aforementioned first optical path is within the range of 75 degrees to 105 degrees.

6. The detection device as described in claim 1, wherein, The aforementioned beam splitter is configured such that the intersection angle between the aforementioned first emitting surface and the aforementioned first optical path is within the range of 75 degrees to 105 degrees.

7. The detection device as described in claim 1, wherein, The aforementioned beam splitter is configured such that the intersection angle of the aforementioned second incident surface with the aforementioned second optical path is within the range of 75 degrees to 105 degrees.

8. The detection device as described in claim 1, wherein, The aforementioned beam splitter is configured such that the intersection angle of the aforementioned second emitting surface with the aforementioned second optical path is within the range of 75 degrees to 105 degrees.

9. The detection device as described in claim 1, wherein, The first aberration correction lens of the aforementioned 1 or more is disposed at at least one of the positions facing the aforementioned first incident surface and the positions facing the aforementioned first exit surface, and the second aberration correction lens of the aforementioned 1 or more is disposed at at least one of the positions facing the aforementioned second incident surface and the positions facing the aforementioned second exit surface.

10. The detection device as described in claim 1, wherein, The aforementioned first aberration correction lens 1 or more is disposed at least on one of a position facing the common incident surface of the aforementioned first light and the aforementioned second light, and a position facing the common exit surface of the aforementioned first light and the aforementioned second light. The aforementioned second aberration correction lens 1 or more is disposed at least on one of a position facing the aforementioned common incident surface and a position facing the aforementioned common exit surface.

11. The detection device as described in claim 1, wherein, The aforementioned first optical path and the aforementioned second optical path have a common optical path. The aforementioned one or more aberration correction lenses include a common correction lens disposed in the aforementioned common optical path, which has the function of the aforementioned first aberration correction lens and has the function of the aforementioned second aberration correction lens.

12. The detection device as described in claim 11, wherein, The aforementioned aberration correction lenses of 1 or more are formed from the aforementioned common correction lenses of 1 or more.

13. The detection device as described in claim 11, wherein, The aforementioned common optical path includes the optical paths of the first light and the second light emitted from the aforementioned beam splitter to the aforementioned camera unit. The aforementioned common correction lens 1 or more is disposed facing the common emission surface of the first light and the second light emitted from the aforementioned beam splitter toward the aforementioned camera unit along the aforementioned common optical path.

14. The detection device as described in claim 1, wherein, The aforementioned first component and the aforementioned second component are constructed of materials with the same refractive index.

15. The detection device as described in claim 1, wherein, The first light mentioned above is the exposure light, and the second light mentioned above is the non-exposure light.

16. A calibration microscope, characterized by comprising: an imaging unit; a beam splitter that splits a first light illuminating a calibration mark (mask mark) of an exposure mask and a second light illuminating a calibration mark (workpiece mark) of a workpiece, and emits the second light to the imaging unit; and one or more aberration correction lenses, wherein the beam splitter has a light splitting surface that splits the first light and the second light, and a first member and a second member that are connected to each other by sandwiching the light splitting surface, and is configured such that the first incident surface into which the first light is incident, the first exit surface into which the first light is emitted, the second incident surface into which the second light is incident, and the second exit surface into which the second light is emitted are all configured such that each of the first incident surface into which the second light is emitted has a different surface direction relative to the light splitting surface; and the one or more aberration correction lenses comprise one or more first aberration correction lenses disposed on the light path (first light path) up to the imaging unit of the first light, and one or more second aberration correction lenses disposed on the light path (second light path) up to the imaging unit of the second light.

17. An exposure apparatus comprising the detection apparatus described in claim 1, characterized in that it further comprises: a light emitting section for emitting exposure light; a mask stage for holding the aforementioned exposure mask; and a workpiece stage for holding the aforementioned workpiece, wherein at least one of the aforementioned mask stage and the aforementioned workpiece stage is configured to be movable.

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