Method for manufacturing semiconductor device

Abstract

This application belongs to the field of semiconductor technology, specifically disclosing a method for manufacturing a semiconductor device, comprising: forming a first stacked structure and a second stacked structure spaced apart from each other on a substrate, the first stacked structure and the second stacked structure respectively comprising alternating stacked first semiconductor layers and second semiconductor layers; filling an isolation wall and a sacrificial layer between the first stacked structure and the second stacked structure, the sacrificial layer being located on both sides of the isolation wall to separate the isolation wall from the first stacked structure and the second stacked structure respectively, the sacrificial layer having a high etch selectivity relative to the first semiconductor layer or the second semiconductor layer; removing one of the first semiconductor layer and the second semiconductor layer and the sacrificial layer; and forming a gate structure around the other.

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