Methods for manufacturing containers, processing devices, and semiconductor devices

Abstract

A technology is provided comprising: an inner tube having an opening for discharging processing gas from a processing chamber; a first buffer portion having a first supply portion disposed inside for supplying the processing gas to the processing chamber; an outer tube disposed outside the inner tube; and a second buffer portion formed along the outer tube on the opposite side of the opening, with the first buffer portion located therebetween and surrounded by the sidewalls of the inner tube, the outer tube, and the first buffer portion; configured in a plan view such that the width of a first gap formed between the outer wall of the first buffer portion and the outer tube is narrower than the width of a second gap formed between the inner tube and the outer tube from the first buffer portion to the opening.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a processing container, a processing device, and a semiconductor device. Background Art

[0002] As one of the processes in the manufacturing process of a semiconductor device, a substrate processing process may be performed in which a raw material gas or a reaction gas is supplied to a substrate to form a film on the substrate. At this time, due to the stagnation caused by the gas circulation of the exhaust gas discharged from the processing chamber, by-products may be deposited, thereby generating fine particles (for example, refer to Patent Publication No. 2019-062053 and International Publication No. 2006-080801). Summary of the Invention

[0003] Problems to be Solved by the Invention The present disclosure provides a technique for suppressing the gas circulation of the exhaust gas discharged from the processing chamber. Means for Solving the Problems

[0004] According to one aspect of the present disclosure, there is provided a technique including: An inner tube having: an opening for discharging a processing gas from the processing chamber; and a first buffer portion in which a first supply portion for supplying the processing gas to the processing chamber is disposed inside; An outer tube disposed outside the inner tube; A second buffer portion formed along the outer tube on the opposite side of the opening, the first buffer portion being located therebetween and surrounded by the side walls of the inner tube, the outer tube, and the first buffer portion; In a plan view, the width of a first gap formed between the outer wall of the first buffer portion and the outer tube is configured to be narrower than the width of a second gap formed between the inner tube and the outer tube from the first buffer portion to the opening. Advantages of the Invention

[0005] According to the present disclosure, the gas circulation of the exhaust gas discharged from the processing chamber can be suppressed. Brief Description of the Drawings

[0006] [FIG. 1] is a schematic configuration diagram of a processing device according to an embodiment of the present disclosure. [FIG. 2] is a cross-sectional view of a substrate processing furnace used in a processing device according to an embodiment of the present disclosure. [FIG. 3] is an enlarged view of the portion indicated by arrow 3X in FIG. 2. [FIG. 4] is an enlarged view of the second supply section showing a modified example (an enlarged view corresponding to FIG. 3). [FIG. 5] is an enlarged view of the second supply section showing another modified example (an enlarged view corresponding to FIG. 3). [FIG. 6] is a block diagram of the controller of the processing device according to an embodiment of the present disclosure. [FIG. 7] is an upper longitudinal sectional view of the substrate processing furnace used in the processing device according to another embodiment of the present disclosure. [FIG. 8] is a cross-sectional view of the substrate processing furnace used in the processing device according to still another embodiment of the present disclosure (a cross-sectional view corresponding to FIG. 2). Embodiment

[0007] Hereinafter, an embodiment of the present disclosure will be mainly described with reference to FIGS. 1 to 3 and FIG. 6. In addition, the drawings used in the following description are all schematic, and the dimensional relationships and ratios of the respective elements in the drawings do not necessarily match the actual ones. In addition, even in multiple drawings, the dimensional relationships and ratios of the respective elements do not necessarily match.

[0008] As an example of the processing device of the present disclosure, that is, the substrate processing device 10 of the present embodiment includes a processing furnace 202. The processing furnace 202 has a heater 207 as a heating means. The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown). The heater 207 also functions as an activation mechanism for activating the processing gas by heat.

[0009] The reaction tube 203 that constitutes the processing container is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC).

[0010] As shown in FIG. 2, the reaction tube 203 has a cylindrical inner tube 12 and a cylindrical outer tube 14 provided around the inner tube. The inner tube 12 and the outer tube 14 are arranged concentrically, and a gap S is formed between the inner tube 12 and the outer tube 14.

[0011] As shown in FIG. 1, the lower end of the inner tube 12 is open and the upper end is closed, and it has a flat wall body. That is, the inner tube 12 is formed in a cylindrical shape with a top. In addition, the outer tube 14 also has an open lower end and a closed upper end, and it has a flat wall body. That is, the outer tube 14 is also formed in a cylindrical shape with a top.

[0012] As shown in FIG. 2, a nozzle arrangement chamber 222 is provided in a gap S formed between the inner tube 12 and the outer tube 14.

[0013] Gas supply slits 235a, 235b, and 235c serving as inflow ports are provided on the peripheral wall of the inner tube 12.

[0014] As shown in FIG. 2, openings 236 serving as openings are provided at portions of the peripheral wall of the inner tube 12 facing the inflow ports 235a, 235b, and 235c. In addition, a second exhaust port 237 serving as an outflow port having an opening area smaller than that of the opening 236 is provided below the opening 236.

[0015] As shown in FIG. 1, a processing chamber 201 is formed inside the inner tube 12. The processing chamber 201 processes a wafer 200 serving as a substrate.

[0016] The processing chamber 201 can accommodate a susceptor 217 serving as a substrate holder, and the substrate holder can hold the wafer 200 in a state where it is arranged in multiple stages in the vertical direction in a horizontal posture. The inner tube 12 surrounds the accommodated wafer 200.

[0017] The lower end of the reaction tube 203 is supported by a manifold 226 in a cylindrical shape. The manifold 226 can be made of a metal such as a nickel alloy or stainless steel, or can be made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). A flange is formed at the upper end portion of the manifold 226, and the lower end portion of the outer tube 14 is provided and supported on the flange. An airtight member 220 such as an O-ring is interposed between the flange and the lower end portion of the outer tube 14. The airtight member 220 keeps the inside of the reaction tube 203 airtight.

[0018] A sealing lid 219 serving as a lid is airtightly installed at the opening at the lower end of the manifold 226 via an airtight member 220 such as an O-ring. The lid 219 airtightly blocks the opening side at the lower end of the reaction tube 203, that is, the opening of the manifold 226. The lid 219 is made of a metal such as a nickel alloy or stainless steel and has a disc shape. The lid 219 may also be configured such that its outside is covered with a heat-resistant material such as quartz or SiC.

[0019] A susceptor support stage 218 for supporting the susceptor 217 is provided on the lid 219. The susceptor support stage 218 is made of a heat-resistant material such as quartz or SiC and functions as a heat insulation portion.

[0020] The susceptor 217 is disposed on the susceptor support table 218. The susceptor 217 is made of a heat-resistant material such as quartz or SiC. The susceptor 217 has a bottom plate (not shown) fixed to the susceptor support table 218 and a top plate disposed above the bottom plate. A plurality of support columns are provided between the bottom plate and the top plate.

[0021] The susceptor 217 holds a plurality of wafers 200 to be processed in the processing chamber 201 within the inner tube 12. The plurality of wafers 200 are supported by the support columns of the susceptor 217 so as to be spaced apart from each other by a constant interval while maintaining a horizontal posture and having their centers aligned with each other. The loading direction of the plurality of wafers 200 is the same as the tube axis direction of the reaction tube 203.

[0022] A susceptor rotation mechanism 267 for rotating the susceptor is provided on the lower side of the lid 219. The rotation shaft 265 of the susceptor rotation mechanism 267 passes through the lid 219 and is connected to the susceptor support table 218. By rotating the rotation shaft 265 of the susceptor rotation mechanism 267, the susceptor 217 is rotated via the susceptor support table 218. When the susceptor 217 rotates, the wafers 200 held by the susceptor 217 also rotate.

[0023] The lid 219 is lifted and lowered in the vertical direction by a susceptor elevator 115 serving as a lifting mechanism provided outside the reaction tube 203. The lifting mechanism 115 transfers the susceptor 217 into or out of the processing chamber 201 via the lid 219.

[0024] In the manifold 226, nozzle support portions 350a to 350e (only the gas nozzle 340a and the nozzle support portion 350a are shown) for supporting the gas nozzles 340a to 340e for supplying gas to the processing chamber 201 are provided so as to penetrate the manifold 226.

[0025] Here, in the present embodiment, five nozzle support portions 350a to 350e are provided. The nozzle support portions 350a to 350c are made of a material such as a nickel alloy or stainless steel (only the nozzle support portion 350a is shown).

[0026] The gas supply pipes 310a to 310c for supplying gas to the processing chamber 201 are respectively connected to one ends of the nozzle support portions 350a to 350e (only the nozzle support portion 350a is shown). In addition, the nozzle support portions connected to the gas nozzles 340d and 340e are integrated by a branch pipe (not shown) and are connected to the gas supply pipe 310d.

[0027] The gas nozzles 340a to 340d are respectively connected to the other ends of the nozzle support parts 350a to 350e (only the nozzle support part 350a and the gas nozzle 340a are shown). The gas nozzles 340a to 340e are made of heat-resistant materials such as quartz and SiC.

[0028] In the gas supply pipe 310a, a source gas supply source 360a for supplying source gas, a mass flow controller (MFC) 320a as a flow controller, and a valve 330a as an on / off valve are sequentially provided from the upstream direction.

[0029] In the gas supply pipe 310b, a source gas supply source 360b for supplying source gas, an MFC 320b, and a valve 330b are sequentially provided from the upstream direction.

[0030] In the gas supply pipe 310c, an inert gas supply source 360c for supplying inert gas, an MFC 320c, and a valve 330c are sequentially provided from the upstream direction.

[0031] In the gas supply pipe 310d, an inert gas supply source 360d for supplying inert gas, an MFC 320d, and a valve 330d are sequentially provided from the upstream direction.

[0032] A gas supply pipe 310e for supplying inert gas is connected to the downstream side of the valve 330a in the gas supply pipe 310a. In the gas supply pipe 310e, an inert gas supply source 360e, an MFC 320e, and a valve 330e are sequentially provided from the upstream direction.

[0033] A gas supply pipe 310f for supplying inert gas is connected to the downstream side of the valve 330b in the gas supply pipe 310b. In the gas supply pipe 310f, an inert gas supply source 360f, an MFC 320f, and a valve 330f are sequentially provided from the upstream direction.

[0034] In addition, the inert gas supply sources 360c to 360e for supplying inert gas are connected to a common supply source.

[0035] As the processing gas supplied from the gas supply pipe 310a, a reaction gas can be cited. In addition, as the processing gas supplied from the gas supply pipe 310b, a gas containing a silicon (Si) source or the like, or a raw material gas such as a gas obtained by gasifying a raw material containing Si can be cited. As the inert gas supplied from each of the gas supply pipes 310c to 310f, nitrogen gas (N2) can be cited. In addition, needless to say, the raw material is not limited to Si.

[0036] An exhaust port 230 is provided in the outer tube 14 of the reaction tube 203. The exhaust port 230 is formed below the second exhaust port 237 and is connected to the exhaust pipe 231.

[0037] The vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via the pressure detector, that is, the pressure sensor 245 for detecting the pressure in the processing chamber 201 and the APC (Automatic Pressure Controller) valve 244 as a pressure regulator. The exhaust pipe 231 on the downstream side of the vacuum pump 246 is connected to an exhaust gas treatment device (not shown) or the like. Thus, it is configured to perform vacuum exhaust on the pressure in the processing chamber 201 to a predetermined pressure (vacuum degree) by controlling the output of the vacuum pump 246 and the opening degree of the valve 244.

[0038] The APC valve 244 is an on-off valve, which performs vacuum exhaust on the processing chamber 201 and stops vacuum exhaust by opening / closing the valve, and further adjusts the conductance by adjusting the valve opening degree and adjusts the pressure in the processing chamber 201.

[0039] A temperature sensor (not shown) is provided in the reaction tube 203 as a temperature detector. By adjusting the power supplied to the heater 207 according to the temperature information detected by this temperature sensor, the temperature in the processing chamber 201 can be made close to the desired temperature distribution.

[0040] In the above processing furnace 202, the susceptor 217 on which a plurality of wafers 200 to be batch-processed are loaded in multiple stages is inserted into the processing chamber 201 through the susceptor support table 218. Then, the wafer 200 inserted into the processing chamber 201 is heated to a predetermined temperature by the heater 207, and a predetermined process is performed.

[0041] Next, the configuration of the reaction tube 203 will be described with reference to FIGS. 2, 3, and 6.

[0042] As shown in FIG. 2, a plurality of gas supply slits 235a to 235c for supplying gas to the processing chamber 201 are formed on the inner tube 12. The gas supply slits 235a to 235c communicate the nozzle arrangement chamber 222 with the processing chamber 201.

[0043] In the nozzle arrangement chamber 222, an annular gap S is formed between the outer peripheral surface 12c of the inner tube 12 and the inner peripheral surface 14a of the outer tube 14. The nozzle arrangement chamber 222 includes a first chamber 222a, a second chamber 222b, and a third chamber 222c. Each of the chambers 222a to 222c is arranged along the circumferential direction of the annular gap S formed.

[0044] In the first chamber 222a, the front wall on the center side of the reaction tube 203 is constituted by the peripheral wall of the inner tube 12, the side wall in the circumferential direction is constituted by the first partition wall 18a and the second partition wall 18b, and the outer tube 14 side is closed by the connection wall 18e.

[0045] In the second chamber 222b, the front wall on the center side of the reaction tube 203 is constituted by the peripheral wall of the inner tube 12, the side wall in the circumferential direction is constituted by the second partition wall 18b and the third partition wall 18c, and the outer tube 14 side is closed by the connection wall 18e.

[0046] A communication path 222e communicating the first chamber 222a and the third chamber 222c is formed between the connection wall 18e and the peripheral wall of the outer tube 14.

[0047] In the third chamber 222c, the front wall on the center side of the reaction tube 203 is constituted by the peripheral wall of the inner tube 12, the side wall in the circumferential direction is constituted by the third partition wall 18c and the fourth partition wall 18d, and the outer tube 14 side is closed by the connection wall 18e.

[0048] Each of the partition walls 18a to 18d and the connection wall 18e is formed from the upper end to the lower end of the inner tube 12. Thus, each of the chambers 222a to 222c is open at its lower end portion and is closed at its upper end by the wall body constituting the top surface of the inner tube 12. That is, each of the chambers 222a to 222c has a top shape formed.

[0049] As shown in FIG. 2, gas nozzles 340a to 340c extending in the vertical direction are respectively provided in each of the chambers 222a to 222c of the nozzle arrangement chamber 222.

[0050] As shown in FIG. 2, on the peripheral wall of the inner tube 12, first buffer portions 12b where the inner peripheral surface 12a retreats outward are provided on both sides of the opening portion 236. The first buffer portions 12b are formed along the vertical direction. Specifically, the first buffer portion 12b includes an outer wall 70 that is bent in an arc shape in a plan view and a pair of side walls 72, 74.

[0051] The outer wall 70 of the first buffer portion 12b is configured to be concentric with the peripheral wall of the outer tube 14. The pair of side walls 72, 74 are disposed opposite to each other in the circumferential direction of the outer tube 14. The side wall 72 is located on the side of the nozzle arrangement chamber 222. In addition, the side wall 74 is located on the side of the opening portion 236. A gas nozzle 340d is disposed inside one of the first buffer portions 12b. In addition, a gas nozzle 340e is disposed inside the other first buffer portion 12b. In addition, the "plan view" in this specification refers to a cross section observed in a plane in a direction orthogonal to the central axis of the reaction tube 203.

[0052] Each of the gas nozzles 340a to 340c is provided from the lower part to the upper part of the nozzle arrangement chamber 222, and the gas nozzles 340d, 340e are provided from the lower part to the upper part inside the first buffer portion 12b. In addition, each of the partition walls 18a to 18d of the nozzle arrangement chamber 222 is formed from the top of the nozzle arrangement chamber 222 to the upper part of the lower end of the reaction tube 203.

[0053] The gas nozzles 340a to 340e are each configured as an I-shaped long nozzle. Gas supply holes 234a to 234e for supplying gas are respectively provided on the side surfaces of the gas nozzles 340a to 340e. The gas supply holes 234a to 234e are respectively opened toward the center of the reaction tube 203, and the gas from each of the gas supply holes 234a to 234e is supplied toward the central portion of the reaction tube 203. In addition, the gas nozzles 340a to 340c are an example of a third supply portion configured to supply gas to the processing chamber 201.

[0054] The gas nozzles 340a and 340c eject inert gas from the gas supply holes 234a and 234c. The gas nozzle 340b releases the source gas in the second chamber 222b, which is the space between each of the partition walls 18b and 18c corresponding to the gas nozzle 340b. In particular, the gas nozzle 340b is an example of a third supply unit configured to supply gas to the processing chamber 201 through flash flow. In addition, gas is supplied from each of the gas nozzles 340a to 340c into the inner tube 12 through the inlets provided in the inner tube 12 formed on the front wall constituting each of the chambers 222a to 222c. The inlets provided in the inner tube 12 preferably extend from between the lowermost wafer 200 that can be placed on the susceptor 217 and the bottom plate of the susceptor 217 to between the uppermost wafer 200 and the top plate of the susceptor 217, and are formed to be located between each wafer 200, the bottom plate, and the top plate.

[0055] The opening 236 is arranged to sandwich the area in the processing chamber 201 where the wafer 200 is accommodated between the opening 236 and the nozzle arrangement chamber 222. The opening 236 is formed in the area (wafer area) from the lower end side to the upper end side of the processing chamber 201 where the wafer 200 is accommodated.

[0056] A second exhaust port 237 is formed in the part of the peripheral wall below the opening 236 of the inner tube 12. The opening 236 is formed to communicate the processing chamber 201 with the gap S, and the second exhaust port 237 is formed to discharge the atmosphere below the processing chamber 201.

[0057] That is, the opening 236 is a gas exhaust port that discharges the atmosphere in the processing chamber 201 into the gap S. The gas discharged from the opening 236 is discharged from the exhaust pipe 231 to the outside of the reaction tube 203 through the gap S outside the inner tube 12 and the exhaust port 230. In addition, the gas discharged from the second exhaust port 237 is discharged from the exhaust pipe 231 to the outside of the reaction tube 203 through the lower side of the gap S and the exhaust port 230.

[0058] With this configuration, the gas after passing through the wafer is discharged through the outside of the cylinder part, thereby reducing the difference between the pressure of the exhaust part such as the vacuum pump 246 and the pressure in the wafer area, and minimizing the pressure loss. By minimizing the pressure loss, the pressure in the wafer area can be reduced, the flow rate in the wafer area can be increased, and the load effect can be alleviated.

[0059] As a result, a main exhaust path 20 is formed to discharge the atmosphere in the inner tube 12 through the opening 236, the gap S, and the exhaust port 230 provided in the outer tube 14, as shown in FIG. 1.

[0060] In addition, as shown in FIG. 1, a sub-exhaust path 22 is provided to exhaust the atmosphere inside the inner tube 12 to the outside through the second exhaust port 237, the gap S, and the exhaust port 230 provided in the outer tube 14.

[0061] As shown in FIG. 1, an opening 236 is formed in the wafer region of the inner tube 12 and communicates with the processing chamber 201 and the gap S. The second exhaust port 237 is formed between a position higher than the upper end of the exhaust port 230 and a position higher than the lower end of the exhaust port 230.

[0062] In addition, as shown in FIG. 2, when the reaction tube 203 is viewed from above, the reaction tube 203 has a second buffer portion 80 along the outer tube 14 on the opposite side of the opening 236 with the first buffer portion 12b interposed therebetween. The second buffer portion 80 is formed to be surrounded by the inner tube 12, the outer tube 14, and the side wall 74 of the first buffer portion 12b. Specifically, the second buffer portion 80 is formed to be surrounded by the outer peripheral surface of the inner tube 12, the inner peripheral surface of the outer tube 14, the side wall 74 of the first buffer portion 12b, and the first partition wall 18a.

[0063] In the reaction tube 203, in a plan view, the width W1 of the first gap 90 formed between the outer wall 70 of the first buffer portion 12b and the inner peripheral surface of the outer tube 14 is narrower than the width W2 of the second gap 92 formed between the outer peripheral surface of the inner tube 12 and the inner peripheral surface of the outer tube 14 from the first buffer portion 12b to the opening. Specifically, in the reaction tube 203 in a plan view, the first buffer portion 12b is configured such that the width W1 of the first gap 90 is narrower than the width W2 of the second gap 92.

[0064] In addition, the first gap 90 is formed between the two side walls 72 and 74 of the first buffer portion 12b. In other words, the first gap 90 is formed between the side wall 72 of the outer wall 70 to the side wall 74. Thereby, the conductivity between the outer wall 70 of the first buffer portion 12b and the outer tube 16 can be made smaller. Therefore, the gas circulation of the gas discharged from the opening 236 can be suppressed.

[0065] In the above plan view, the width W1 of the first gap 90 is configured to be constant along the outer tube 14. However, the present disclosure is not limited to this configuration, and the width W1 of the first gap 90 may be configured to become narrower along the outer tube 14 toward the second buffer portion 80 in the above plan view.

[0066] Inside each of the second buffer parts 80, a second supply part, namely a gas nozzle 340f, for supplying a purifying gas as an inert gas is provided. Further, inside the other second buffer part 80, a second supply part, namely a gas nozzle 340g, for supplying a purifying gas as an inert gas is provided. These gas nozzles 340f and 340g extend in the vertical direction respectively.

[0067] In the gas nozzle 340f, a plurality of long gas supply holes 234f are provided at intervals in the length direction of the gas nozzle 340f. The gas nozzle 340f is configured to supply the purifying gas toward the upper first gap 90 in FIG. 2. That is, the injection direction of the purifying gas from the gas nozzle 340f is toward the first gap 90. More specifically, the gas supply holes 234f open toward the first gap 90.

[0068] In the gas nozzle 340g, a plurality of long gas supply holes 234g are provided at intervals in the length direction of the gas nozzle 340g. The gas nozzle 340g is configured to supply the purifying gas toward the lower first gap 90 in FIG. 2. That is, the injection direction of the purifying gas from the gas nozzle 340g is toward the first gap 90. More specifically, the gas supply holes 234g open toward the first gap 90. Further, in the present embodiment, the gas nozzle 340f and the gas nozzle 340g have the same flow path diameter (pipe diameter).

[0069] Further, the width W1 of the first gap 90 is configured to be smaller than the flow path diameter D of the gas nozzles 340f and 340g. Further, the protruding amount H of the first buffer part 12b protruding from the inner tube 12 is configured to be larger than the flow path diameter D of the gas nozzles 340f and 340g. Further, the second buffer part 80 is configured to be able to be filled with the purifying gas supplied from the gas nozzles 340f and 340g.

[0070] Further, the purifying gas can be supplied from the gas nozzles 340f and 340g to the side wall of the first buffer part 12b, the inner tube 12 or the outer tube 16, so that the inside of the second buffer part 80 becomes a high pressure relative to the opening 236. Thereby, the effect of suppressing the bypass of the gas discharged from the opening 236 can be improved.

[0071] FIG. 6 is a block diagram showing the substrate processing apparatus 10. The controller 280, which is the control unit of the substrate processing apparatus 10, is constituted by a computer. This computer includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a memory device 121c, and an I / O port 121d.

[0072] The RAM 121b, the memory device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, which is configured as, for example, a touch panel, is connected to the controller 280.

[0073] The memory device 121c is constituted by, for example, a flash memory, an HDD (Hard Disk Drive), etc. In the memory device 121c, a control program for controlling the operation of the substrate processing apparatus and a process recipe, etc., which describes the sequence, conditions, etc. of the substrate processing described later, are stored in a readable manner.

[0074] The process recipe functions as a program and is a combination that enables the controller 280 to execute each sequence in the substrate processing process described later to obtain a predetermined result. Hereinafter, the process recipe, the control program, etc. are collectively referred to as programs.

[0075] When the term "program" is used in this specification, it may include only a single process recipe, only a single control program, or both. The RAM 121b is configured as a memory area (working area) for temporarily storing programs, data, etc. read by the CPU 121a.

[0076] The I / O port 121d is connected to the above-mentioned MFCs 320a to 320f, valves 330a to 330f, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, susceptor rotation mechanism 267, susceptor elevator 115, etc.

[0077] The CPU 121a is configured to read and execute a control program from the memory device 121c, and to read a process recipe from the memory device 121c in response to the input of an operation command from the input / output device 122, etc.

[0078] The CPU 121a is configured to perform the following controls according to the content of the read process recipe: controlling the flow rate adjustment operations of various gases of the MFCs 320a to 320f, the opening and closing operations of the valves 330a to 330f, and the opening and closing operations of the APC valve 244. In addition, the CPU 121a is configured to control the pressure adjustment operation of the APC valve 244, the start and stop of the vacuum pump 246, and the temperature adjustment operation of the heater 207 according to the temperature sensor based on the pressure sensor 245. In addition, the CPU 121a is configured to control the rotation and rotation speed adjustment operations of the susceptor 217 through the susceptor rotation mechanism 267, the lifting operation of the susceptor 217 through the susceptor elevator 115, and the like.

[0079] The controller 280 is not limited to being composed of a dedicated computer, but can be composed of a general-purpose computer. For example, the controller 280 of the present embodiment can be configured by preparing an external memory device 123 storing the above program and installing the program into a general-purpose computer or the like using the external memory device 123. Examples of the external memory device include magnetic disks such as hard disks, optical disks such as CDs, magneto-optical disks such as MOs, and semiconductor memories such as USB memories.

[0080] In addition, the means for providing the program to the computer is not limited to providing it via the external memory device 123. For example, the program can be provided using communication means such as the Internet or a dedicated line without passing through the external memory device 123. The memory device 121c and the external memory device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to as recording media. When the term "recording medium" is used in this specification, it can include only a single memory device 121c, only a single external memory device 123, or both.

[0081] (Example) Next, the outline of the operation of the substrate processing apparatus of the present embodiment will be described according to the control sequence executed by the controller 280 when executing the process recipe. In addition, the susceptor 217 on which a predetermined number of wafers 200 are placed is inserted into the reaction tube 203 in advance, the reaction tube 203 is hermetically sealed with the lid 219, and the vacuum pump 246 and the APC valve 244 are operated to discharge the atmosphere in the reaction tube 203 from the exhaust port 230 and adjust the pressure to a predetermined pressure. In addition, these susceptor loading and pressure adjustment can also be included in the process recipe.

[0082] For example, the controller 280 opens valves 330b and 330f to supply a source gas from a gas nozzle 340b, which is an example of a second gas nozzle. At the same time, the controller 280 closes valve 330a and opens valves 330c to 330f to supply N2 gas, which is an inert gas, from gas nozzles 340a, 340c to 340e to process the wafer 200 (first processing sequence).

[0083] At this time, the controller 280 operates the vacuum pump 246 and the APC valve 244 to exhaust the atmosphere in the reaction tube 203 from the exhaust port 230 so that the pressure obtained from the pressure sensor 245 becomes constant. As a result, the mixed gas of the source gas and the inert gas flows parallel above the wafer 200, then flows from the upper part to the lower part of the gap S through the opening 236 and the second exhaust port 237, and is then exhausted from the exhaust pipe 231 via the exhaust port 230.

[0084] In addition, particularly, a part of the mixed gas discharged from the opening 236 does not flow toward the exhaust port 230 in the gap S but flows backward (diffuses). According to the present embodiment, by using the first gap 90 formed between the first buffer portion 12b and the outer tube 14, the diffusion of the mixed gas can be suppressed before the first buffer portion 12b. As a result, after the mixed gas flows parallel on the wafer 200, it passes through the opening 236, flows from the upper part to the lower part of the gap S, and is exhausted from the exhaust pipe 231 via the exhaust port 230.

[0085] In this processing sequence, an inert gas is supplied from the gas nozzles 340a, 340c to 340e to the center of the wafer 200. At this time, the supply amount of the inert gas supplied from each of the gas nozzles 340a, 340c to 340e is controlled by the controller 280 and adjusted so that the inert gas concentration at the center portion of the wafer 200 is lower than the inert gas concentration at the outer peripheral portion. As a result, the supply amount of the source gas supplied to the center portion of the wafer 200 can be controlled so that the in-plane thickness distribution of the layer formed on the wafer 200 using the source gas can be changed from a central concave distribution to a more nearly flat distribution or a more nearly central convex distribution.

[0086] On the other hand, in this processing sequence, for example, the supply amount of the inert gas supplied from each of the gas nozzles 340f, 340g is controlled by the controller 280 so that the second buffer portion 80 is filled with the inert gas, and the pressure in the second buffer portion 80 is adjusted to be higher than the pressure on the opening 236 side. Thereby, the flow of a part of the mixed gas that diffuses backward in the gap S can be suppressed. Then, it can be exhausted from the exhaust port 230 without being retained. Alternatively, an inert gas can also be supplied from each of the gas nozzles 340f, 340g to the first gap 90.

[0087] When the first processing sequence is completed after a predetermined time or the like, the controller 280 closes the valve 330b to stop supplying the source gas from the gas nozzle 340b, and opens the valve 330f to supply the inert gas from the gas nozzle 340b. In addition, by controlling the vacuum pump 246 and the APC valve 244 to increase the negative pressure supplied into the reaction tube 203 or the like, the atmosphere inside the reaction tube 203 is exhausted from the exhaust port 230 (exhaust sequence).

[0088] At this time, the supply of the inert gas from each of the gas nozzles 340f and 340g is stopped. At the same time, the valves 330a and 330c are opened, the inert gas is supplied from the gas nozzles 340a and 340c, discharged from the exhaust port 230 at the same time, and the gas remaining in the gap S between the inner tube 12 and the outer tube 14 is purged out from the exhaust port 230 (Purge Out) (discharge sequence).

[0089] When the processing of the wafer 200 is completed by performing the above-described first processing sequence and discharge sequence, the susceptor 217 is taken out from the reaction tube 203 by performing the reverse sequence of the above actions. The wafer 200 is transferred from the susceptor 217 to a cassette (pod) on the transfer rack by a wafer transfer machine (not shown), the cassette is transferred from the transfer rack to the cassette mounting table by a cassette transfer machine, and is taken out to the outside of the casing by an external transfer device.

[0090] (Modification 1) In addition, after the first processing sequence, the controller 280 may open the valves 330a and 330e to supply a reaction gas (for example, a nitrogen-containing substance, an oxygen-containing substance) from the gas nozzle 340a. In this case, it may be configured such that the controller 280 closes the valve 330b and opens the valves 330c, 330d, and 330f to supply nitrogen gas (N 2) as an inert gas from the gas nozzles 340a, 340c, 340d, and 340f, and perform processing on the wafer 200 (second processing sequence).

[0091] At this time, a part of the mixed gas of the reaction gas and the inert gas discharged from the opening 236 flows backward through the gap S and does not flow toward the exhaust port 230. Similar to the first treatment sequence, by utilizing the first gap 90 formed between the first buffer portion 12b and the outer tube 14, the diffusion of this mixed gas before the first buffer portion 12b can be suppressed. In addition, by controlling the supply amount of the inert gas supplied from each of the gas nozzles 340f and 340g by the control unit 280, the pressure in the second buffer is adjusted to be higher than the pressure on the opening 236 side, thereby being able to suppress the flow of a part of the mixed gas that diffuses backward in the gap S.

[0092] After the above second treatment sequence is completed after a predetermined time, the above exhaust sequence is executed and the supply of the inert gas from each of the gas nozzles 340f and 340g is stopped. Subsequently, the above exhaust means is executed.

[0093] (Modification 2) Next, in the process of supplying the raw material gas to the wafer 200 in the processing chamber 201 (the first treatment sequence), first, the valves 330b and 330f are opened, and the raw material gas is supplied to a storage portion (not shown) via the gas supply pipes 310b and 310f. The raw material is stored in the storage portion and heated and vaporized by a heater (not shown). The vaporized gaseous raw material (raw material gas) is adjusted in flow rate via the MFCs 320b and 320f and supplied to the gas supply pipes 310b and 310f. This raw material gas is supplied from the gas supply hole 234b of the gas nozzle 340b to the processing chamber 201 and discharged from the exhaust port 230.

[0094] At this time, the raw material gas discharged from the opening 236 directly enters the gap S and collides with the outer tube 14. Then, a part of the raw material gas does not flow toward the exhaust port 230 in the gap S but diffuses along the outer tube. In other words, in the Flash Supply in the embodiment, there is a concern that a large amount of the raw material gas does not flow toward the exhaust port 230 but diffuses in the gap S.

[0095] However, even in this case, similar to the above first treatment sequence, by utilizing the first gap 90 formed between the first buffer portion 12b and the outer tube 14, the diffusion of this raw material gas before the first buffer portion 12b can also be suppressed. In addition, by controlling the supply amount of the inert gas supplied from each of the gas nozzles 340f and 340g by the controller 280, the pressure in the second buffer is adjusted to be higher than the pressure on the opening 236 side, thereby being able to suppress the flow of a part of the raw material gas that diffuses backward in the gap S. Thereby, the exhaust performance of the raw material gas can be improved.

[0096] According to the present embodiment, one or more of the following effects can be achieved.

[0097] (a) In the plan view, the width W1 of the first gap 90 formed between the outer wall 70 of the first buffer portion 12b and the outer tube 142 is configured to be narrower than the width W2 of the second gap 92 formed between the inner tube 12 from the first buffer portion 12b to the opening 236 and the outer tube 142. Therefore, the conductivity between the outer wall of the first buffer portion 12b and the outer tube 14 can be configured to be smaller. That is, in the gap S between the inner tube 12 and the outer tube 14, the pressure on the nozzle arrangement chamber 222 side can be made a positive pressure with respect to the exhaust port 230 side. Therefore, the recirculation of the exhaust gas discharged from the opening 236 can be suppressed. Thereby, the adhesion and generation of by-products inside the reaction tube 203 can be suppressed, and the generation of fine particles can be reduced.

[0098] (b) Further, a purification gas can be supplied from the gas nozzles 340f and 340g to the first gap 90 formed between the first buffer portion 12b and the outer tube 14, which can improve the effect of suppressing the recirculation of the exhaust gas discharged from the opening 236 and can suppress the retention of the recirculated exhaust gas. In addition, compared with the case where the first gap 90 is not configured as in the present disclosure, the flow rate of the purification gas can be reduced.

[0099] (c) Even if recirculation of the exhaust gas discharged from the opening 236 occurs due to a large flow rate supply (flash supply), according to this configuration, in the plan view, among the widths formed between the inner tube 12 and the outer tube 14, the width W1 of the first gap 90 is configured to be narrower, and since the width W1 is constant along the outer tube 14 from the outer wall 70 of the first buffer portion 12b, the conductivity between the outer wall 70 of the first buffer portion 12b and the outer tube 14 can be configured to be smaller. Therefore, the recirculation of the exhaust gas discharged from the opening 236 can be suppressed.

[0100] (Another embodiment of the present disclosure) Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0101] For example, in the above-described embodiment, the gas nozzle 340f is configured to supply the purified gas to the first gap 90 on the upper side in FIG. 3, but the present disclosure is not limited to this configuration. For example, the gas nozzle 340f may be configured to supply the purified gas to any one of the inner tube 12, the outer tube 14, and the side wall 72 of the first buffer portion 12b. In addition, the gas nozzle 340f may be configured to supply the purified gas in an inclined direction along the outer tube 14 from the second buffer portion 80 toward the opening 236. In the example of FIG. 4, the gas nozzle 340f injects the purified gas toward the side wall 72 of the first buffer portion 12b. According to this configuration, the purified gas can be supplied from the gas nozzle 340f to the side wall 72 of the first buffer portion 12b, the inner tube 12, or the outer tube 14, and the pressure inside the second buffer portion 80 can be made higher relative to the opening 236. Thereby, the effect of suppressing the recirculation of the exhaust gas discharged from the opening 236 can be improved. In addition, the same effect can also be obtained with respect to the gas nozzle 340g.

[0102] In addition, in the above-described embodiment, one gas nozzle is provided in each second buffer portion 80, but the present disclosure is not limited to this configuration. A plurality of gas nozzles may be arranged inside the second buffer portion 80. For example, as shown in FIG. 5, a gas nozzle 340f that injects the purified gas into the first gap 90 and a gas nozzle 340h that injects the purified gas toward the side wall 72 of the first buffer portion 12b may be arranged inside the second buffer portion 80. According to this configuration, the purified gas can be supplied from the gas nozzle 340f to the first gap 90, and the purified gas can be supplied from the gas nozzle 340h to the side wall 72 of the first buffer portion 12b, the inner tube 12, or the outer tube 14, and the pressure inside the second buffer portion 80 can be set to be higher relative to the opening 236. Thereby, the effect of suppressing the recirculation of the exhaust gas discharged from the opening 236 can be improved. In addition, by arranging a plurality of gas nozzles inside another second buffer portion 80 and adjusting the injection direction of each purified gas, the same effect as described above can also be obtained.

[0103] In addition, a part of the gas nozzle disposed in each second buffer portion 80 can serve as a gas nozzle 96 for supplying a purifying gas to the region between the top of the outer tube 14 and the top of the inner tube 12. When using this gas nozzle 94, for example, as shown in FIG. 7, a baffle 97 extending from the upper part of the inner tube 12 to the outer tube 14 is provided, and a baffle 98 extending from the top of the inner tube 12 to the top of the outer tube 14 is provided. In addition, a gap is provided between the baffle 97 and the outer tube 14. A gap is also provided between the baffle 98 and the top of the outer tube 14. In addition, in this case, the gas nozzle 94 can supply a purifying gas to the exhaust gas that bypasses into the region between the top of the outer tube 14 and the top of the inner tube 12, thereby not only improving the effect of suppressing the bypass of the exhaust gas, but also improving the exhaust efficiency.

[0104] As shown in FIG. 8, there may be provided gas nozzles 340a to 340e configured to be able to supply a source gas to the processing chamber 201 through side flow, and partition plates 18a and 18d. The second buffer portion 80 is formed to be surrounded by the inner tube 12, the outer tube 14, the side wall 72 of the first buffer portion 12b, and the partition plate 18a or 18d. Through such a configuration, it is possible to suppress the diffusion (or inflow) of the source gas into the second buffer portion 80 due to the bypass from the gas nozzles 340a to 340e.

[0105] In addition, for example, in the above-described embodiments, the processing performed by the processing device is exemplified by a film-forming process in a semiconductor device, but the present disclosure is not limited thereto. That is, in addition to the film-forming process, it may also be a process of forming an oxide film, a nitride film, or a film containing a metal. In addition, the specific content of the substrate processing is not limited, and the present disclosure can be applied not only to the film-forming process, but also to other substrate processes such as annealing, oxidation, nitridation, diffusion, and lithography processes. In addition, the present disclosure can also be applied to other substrate processing devices, for example, to other substrate processing devices such as an annealing device, an oxidation device, a nitridation device, an exposure device, a coating device, a drying device, a heating device, and a plasma processing device. In addition, in the present disclosure, these devices can be used together.

[0106] In addition, a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can also be added to the configuration of one embodiment. In addition, a part of the configuration of each embodiment can be added, deleted, or replaced with other configurations.

[0107] 12: Inner tube 14: Outer tube 12b: First buffer part 80: Second buffer part 90: First gap 92: Second gap 236: First gas exhaust port (an example of an opening) W1: Width W2: Width

Claims

1. A processing container comprising: an inner tube having an opening for discharging processing gas from a processing chamber; and a first buffer portion having a first supply portion disposed therein for supplying the processing gas to the processing chamber; an outer tube disposed outside the inner tube; and a second buffer portion formed along the outer tube on the opposite side of the opening, wherein the first buffer portion is located therebetween and surrounded by the inner tube, the outer tube, and the sidewalls of the first buffer portion; configured in a plan view such that the width of a first gap formed between the outer wall of the first buffer portion and the outer tube is narrower than the width of a second gap formed between the inner tube and the outer tube from the first buffer portion to the opening, the first gap being formed between the two sidewalls of the first buffer portion.

2. The processing container as claimed in claim 1, wherein in the plan view, the width of the aforementioned first gap is constant along the aforementioned outer tube.

3. The processing container as claimed in claim 2, wherein the outer wall of the aforementioned first buffer section and the aforementioned outer tube are configured as concentric circles.

4. The processing container of claim 1, wherein in the plan view, the width of the aforementioned first gap narrows along the aforementioned outer tube toward the aforementioned second buffer section.

5. The processing container of claim 1, further comprising: a second supply section for supplying purified gas into the aforementioned second buffer section, wherein the width of the aforementioned first gap is configured to be smaller than the flow path diameter of the aforementioned second supply section.

6. The processing container as claimed in claim 5, wherein the width between the two side walls of the aforementioned first buffer section is configured to be larger than the flow path diameter of the aforementioned second supply section.

7. The processing container of claim 1, further comprising: a second supply unit for supplying purified gas into the aforementioned second buffer unit, wherein the aforementioned second supply unit is configured to supply the purified gas from the aforementioned second buffer unit along the aforementioned outer tube in an inclined direction relative to the direction toward the aforementioned opening.

8. The processing container as claimed in claim 7, wherein the aforementioned second buffer is configured to be filled with the aforementioned purified gas.

9. The processing container of claim 8, wherein the second supply section is configured to supply the purified gas toward any one of the sidewalls of the inner tube, the outer tube and the first buffer section.

10. The processing container of claim 7, wherein the aforementioned second supply section is configured to supply the aforementioned purified gas toward the aforementioned first gap.

11. The processing container as claimed in claim 8, wherein the aforementioned second supply section is disposed near the aforementioned first buffer section.

12. The processing container as described in claim 7, wherein a plurality of the aforementioned second supply units are disposed within the aforementioned second buffer unit.

13. The processing container of claim 12, wherein the aforementioned second supply section has: a first purification nozzle for supplying purification gas toward any one of the sidewalls of the inner tube, the outer tube and the first buffer section; and a second purification nozzle for supplying purification gas toward the area between the top of the aforementioned outer tube and the top of the aforementioned inner tube.

14. The processing container of claim 1, further comprising: a third supply unit configured to supply the aforementioned processing gas to the aforementioned processing chamber via a flash flow.

15. The processing container of claim 1, further comprising: a third supply section configured to supply the processing gas to the processing chamber via a side flow, wherein the second buffer section is formed to be surrounded by the inner tube, the outer tube, the sidewall of the first buffer section and the third supply section.

16. The processing container of claim 14, further comprising: a second supply unit for supplying purified gas into the aforementioned second buffer unit, the aforementioned second supply unit being configured to supply the purified gas toward a third gap formed between the aforementioned third supply unit and the aforementioned inner tube.

17. A processing apparatus having a processing container comprising: an inner tube having an opening for discharging processing gas from a processing chamber; and a first buffer having a first supply portion disposed therein for supplying the processing gas to the processing chamber; an outer tube disposed outside the inner tube; and a second buffer formed along the outer tube on the opposite side of the opening, wherein the first buffer is located therebetween and surrounded by the inner tube, the outer tube, and the sidewalls of the first buffer; wherein, in a plan view, the width of a first gap formed between the outer wall of the first buffer and the outer tube is narrower than the width of a second gap formed between the inner tube and the outer tube from the first buffer to the opening, and the first gap is formed between the two sidewalls of the first buffer.

18. A method for manufacturing a semiconductor device, comprising the following steps: a step of moving a substrate containing a semiconductor into a processing container; and a step of supplying a processing gas to the substrate for a predetermined processing; wherein the processing container comprises: an inner tube having an opening for discharging the processing gas from a processing chamber; and a first buffer having a first supply portion disposed inside for supplying the processing gas to the processing chamber; an outer tube disposed outside the inner tube; and a second buffer formed along the outer tube on the opposite side of the opening, wherein the first buffer is located therebetween and surrounded by the inner tube, the outer tube, and the sidewalls of the first buffer; wherein in a plan view, the width of a first gap formed between the outer wall of the first buffer and the outer tube is narrower than the width of a second gap formed between the inner tube and the outer tube from the first buffer to the opening, and the first gap is formed between the two sidewalls of the first buffer.

19. A method for manufacturing a semiconductor device as claimed in claim 18, wherein in the process of performing the aforementioned predetermined processing, a raw material gas is supplied to the aforementioned substrate via a storage container, the storage container being provided on a raw material gas supply line that supplies the aforementioned raw material gas to the aforementioned processing chamber, and configured to temporarily store the aforementioned raw material gas inside.

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