Electronic device

TWI939865BActive Publication Date: 2026-09-21INNOLUX CORP
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Patent Information

Application Number
TW113145314
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Filing Date
2024-11-25
Publication Date
2026-09-21
Estimated Expiration
2044-11-24

AI Technical Summary

Technical Problem

Traditional microlens manufacturing processes in electronic devices often result in shape errors due to terrain or layer structure, affecting optical performance and display brightness, particularly at the center viewing angle.

Method used

The electronic device incorporates a substrate with a plurality of transistors and two types of lens units, where the number of channels overlapping with each lens unit differs, enhancing structural strength and optimizing brightness by varying the distribution and shape of lens units.

Benefits of technology

This configuration improves display brightness by balancing lens unit distribution and shape, reducing light diffraction and enhancing overall optical performance.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

This disclosure presents an electronic device comprising a substrate, a plurality of transistors, a first lens unit, and a second lens unit. The plurality of transistors are disposed on the substrate, and each transistor has a channel. The first lens unit and the second lens unit are disposed on the substrate. The number of channels in the plurality of transistors overlapping with the first lens unit is different from the number of channels in the plurality of transistors overlapping with the second lens unit.
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Description

Technical Field

[0001] This disclosure relates to an electronic device, and more particularly to an electronic device having a dummy lens unit. Prior Technology

[0002] In specialized applications such as automotive and projection displays, electronic devices are increasingly demanding in terms of brightness at the center viewing angle of the display unit. By incorporating microlenses into the light-emitting unit, display brightness can be effectively improved. However, the optical performance of a microlens is closely related to its shape. In traditional microlens manufacturing processes, errors in the microlens shape are often caused by the terrain or layer structure where the microlens is located. Summary of the Invention

[0003] According to some embodiments, this disclosure provides an electronic device including a substrate, a plurality of transistors, a first lens unit, and a second lens unit. The plurality of transistors are disposed on the substrate, and each transistor has a channel. The first lens unit and the second lens unit are disposed on the substrate. The number of channels in the plurality of transistors overlapping with the first lens unit is different from the number of channels in the plurality of transistors overlapping with the second lens unit. Simple Explanation of the Diagram

[0004] Figure 1 is a top view of an electronic device according to an embodiment of the present disclosure. Figure 2 is a cross-sectional view of the electronic device in Figure 1 along the dashed line 2-2'. Figure 3 is a top view of an electronic device according to another embodiment of this disclosure. Figure 4 is a cross-sectional view of the electronic device in Figure 3 along the dashed line ABCE in Figure 3. Figure 5 is a top view of an electronic device according to another embodiment of this disclosure. Figure 6 is a cross-sectional view of the electronic device in Figure 5 along the dashed line ABCE in Figure 5. Figure 7 is a top view of an electronic device according to another embodiment of this disclosure. Figure 8 is a cross-sectional view of the electronic device in Figure 7 along the dashed line ABCE in Figure 7. Figure 9 is a cross-sectional view of an electronic device according to another embodiment of this disclosure. Figure 10 is a cross-sectional view of an electronic device according to another embodiment of this disclosure. Figure 11 is a top view of an electronic device according to another embodiment of this disclosure. Figure 12 is a cross-sectional view of the electronic device in Figure 11 along the dashed line ABC in Figure 11. Figure 13 is a cross-sectional view of an electronic device according to another embodiment of this disclosure. Figure 14 is a cross-sectional view of an electronic device according to another embodiment of this disclosure. Figure 15 is a top view of an electronic device according to another embodiment of this disclosure. Figure 16 is a cross-sectional view of an electronic device according to another embodiment of this disclosure. Figure 17 is a cross-sectional view of an electronic device according to another embodiment of this disclosure. Figure 18 is a cross-sectional view of two electronic devices according to another embodiment of this disclosure. Implementation

[0005] This disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the drawings in this disclosure depict only a portion of the electronic device, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0006] Throughout this disclosure and in the accompanying claims, certain terms are used to refer to specific components. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same components. This document is not intended to distinguish between components that function identically but have different names.

[0007] In the following description and claims, the terms "comprising," "containing," and "having" are open-ended terms and should therefore be interpreted as "containing but not limited to...". Thus, when the terms "comprising," "containing," and / or "having" are used in the description of this disclosure, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0008] The directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are for reference only when referring to the accompanying drawings. Therefore, the directional terms used are illustrative and not intended to limit this disclosure. In the accompanying drawings, each figure illustrates general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and positions of various films, regions, and / or structures may be reduced or enlarged.

[0009] When a component (e.g., a membrane or region) is referred to as "on another component," it can be directly on that component, or there can be other components between them. Conversely, when a component is referred to as "directly on another component," there are no components between them. Furthermore, when a component is referred to as "on another component," the two components are vertically related, and this component can be above or below the other component, depending on the orientation of the device.

[0010] It should be understood that when a component or membrane is referred to as being "connected to" another component or membrane, it can be directly connected to this other component or membrane, or there can be an intercalated component or membrane between them. When a component is referred to as being "directly connected to" another component or membrane, there is no intercalated component or membrane between them. Additionally, when a component is referred to as being "coupled to another component (or a variant thereof)," it can be directly electrically connected to this other component, or indirectly connected (e.g., indirectly electrically connected) to this other component through one or more components.

[0011] In this disclosure, when one component is "disconnected" from another component, an electrical signal cannot flow between the two components for a specified period of time.

[0012] The terms "approximately" or "about" are generally interpreted as being within plus or minus 10% of a given value, or within plus or minus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1%, or plus or minus 0.5% of a given value.

[0013] The ordinal numbers used in the specification and claims, such as "first" and "second," to modify elements do not inherently imply or represent any prior ordinal number for that element (or those elements), nor do they represent the order of one element with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish one named element from another with the same name. The claims and specification may not use the same terminology; therefore, a first component in the specification may be a second component in the claim.

[0014] It should be understood that the features in the following embodiments can be replaced, recombined, or mixed to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily mixed and combined as long as they do not violate the spirit of the invention or conflict with it.

[0015] In this disclosure, the electronic device may include a display device, a light-emitting device, an antenna device, a sensing device, a splicing device, or any combination thereof, but is not limited thereto. The display device may be a non-self-emissive display or a self-emissive display, and may be a color display or a monochrome display, depending on the requirements. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device; the sensing device may be a sensing device that senses capacitance, light, heat, or ultrasound; the splicing device may be a display splicing device or an antenna splicing device, but is not limited thereto. The electronic device may include electronic components, which may include passive and active components, such as capacitors, resistors, inductors, diodes, transistors, dies, integrated circuits (ICs), sensors, redistribution layers (RDLs), or chips. Diodes may be dies or chips, and may include light-emitting diodes (LEDs), photodiodes, or varactors, but are not limited thereto. Light-emitting diodes (LEDs) may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, or quantum dot LEDs, but are not limited thereto. Transistors may include, for example, top-gate thin-film transistors, bottom-gate thin-film transistors, or dual-gate thin-film transistors, but are not limited thereto. Electronic devices may also include fluorescent materials, phosphorescent materials, quantum dot (QD) materials, or other suitable materials as needed, but are not limited thereto. Electronic devices may have peripheral systems such as drive systems, control systems, light source systems, etc., to support the devices and components within the electronic device.

[0016] It should be noted that the technical features in the different embodiments described below may be replaced, rearranged or combined with each other to form another embodiment without departing from the spirit of this disclosure.

[0017] Please refer to Figures 1 and 2. Figure 1 is a top view of an electronic device 10A according to an embodiment of this disclosure, and Figure 2 is a cross-sectional view of the electronic device 10A in Figure 1 along the dashed line 2-2'. The top view in Figure 1 extends along directions X and Y, while the cross-sectional view in Figure 2 extends along directions X and Z, and directions X, Y, and Z may be perpendicular to each other. The electronic device 10A includes a substrate 110, a plurality of transistors Q, at least one lens unit L1, and at least one lens unit L2. Each transistor Q is disposed on the substrate 110 and has a channel L. Lens units L1 and L2 are both disposed on the substrate 110, and the number of channels L overlapping with lens unit L1 in all transistors Q is different from the number of channels L overlapping with any one lens unit L2 in all transistors Q. In this embodiment, the determination of whether lens unit L1 or L2 overlaps with channel L is performed in a top-view manner along direction Z. If any transistor Q's channel L overlaps with lens unit L1 or L2 in the top view of Figure 1, the number of overlapping channels L is increased by one. As shown in Figure 2 of this embodiment, the number of channels L overlapping with lens unit L1 in all transistors Q is three, while the number of channels L overlapping with the two lens units L2 in all transistors Q is zero and one, respectively. Furthermore, in this embodiment, the number of channels L overlapping with any lens unit L1 in all transistors Q is greater than the number of channels overlapping with any lens unit L2 in all transistors Q. However, this disclosure is not limited to this. In other embodiments of this disclosure, the number of channels L overlapping with any lens unit L1 in all transistors Q may be less than the number of channels overlapping with any lens unit L2 in all transistors Q. By setting lens unit L2, the structural strength of electronic device 10A can be enhanced.

[0018] Each transistor Q may include a gate G, a source S, and a drain D, and a semiconductor layer connected to the source S and drain D, while a channel L is formed between the source S and drain D. The channel L is the overlapping area of ​​the gate G and the semiconductor layer of the transistor Q in a top view of the electronic device 10A. The area of ​​the electronic device 10A can be divided into an active region 112 and a peripheral region 114 adjacent to the active region 112. The active region 112 is the area where the main components of the electronic device 10A operate and / or are operated by the user, such as: light-emitting units generating light, electromagnetic components sending and / or receiving electromagnetic waves, and the location of touch elements. The peripheral region 114 is the area of ​​the electronic device 10A other than the active region 112. In this embodiment, a lens unit L1 may be disposed in the active region 112, while a lens unit L2 may be partially disposed in the peripheral region 114 and partially disposed in the active region 112. The electronic device 10A may further include a driving circuit 118 and a conductive layer M1. The driving circuit 118 may be, but is not limited to, a gate driver circuit and includes multiple transistors Q. A conductive layer M1 is disposed on the substrate 110 and has multiple wires 116. The wires 116 may be coupled to the driving circuit 118, or act as a bridging portion between other signal lines, or as a light-shielding structure, but are not limited thereto. The driving circuit 118 can drive the transistors Q disposed in the active region 112 via the wires 116. The electronic device 10A may further include an insulating layer 120 disposed on the substrate 110 and covering the driving circuit 118 and the conductive layer M1. The electronic device 10A may further include a conductive layer M2, which is disposed on the insulating layer 120 and has multiple wires 126. The wires 126 can be used to couple some signal lines, or as a light-shielding structure, but are not limited thereto. In this embodiment, the pitch W1 of two adjacent wires 126 located below lens unit L1 is smaller than the pitch W2 of two other adjacent wires 126 located below lens unit L2. Pitch W1 and pitch W2 refer to the distance between the same side of two adjacent wires 126. For example, as shown in Figure 2, pitch W1 and pitch W2 refer to the distance between the left sides of two adjacent wires 126. In other embodiments, the pitch between wires 126 can be the distance between the centers of two adjacent wires 126. The electronic device 10A may further include a definition layer 128 disposed on the insulating layer 120, and the definition layer 128 may be, but is not limited to, a pixel definition layer (PDL). The electronic device 10A may further include an insulating layer 130 disposed on the insulating layer 120 and covering the definition layer 128 and the conductive layer M2. In this embodiment, both lens unit L1 and lens unit L2 are disposed on the insulating layer 130. The electronic device 10A may further include a lens defining layer 132 disposed on the insulating layer 130 and formed between each lens unit L1 and L2.Lens units L1 and L2 can be distinguished by whether they overlap with the light-emitting element, the area where the lens unit is located, or whether they overlap with the light-shielding element. In some embodiments, lens unit L1 overlaps with the light-emitting element (e.g., a light-emitting diode) in a cross-sectional view of electronic device 10A, while lens unit L2 does not overlap with the light-emitting element in a cross-sectional view of electronic device 10A. In some embodiments, lens unit L1 is located in the active region 112, while lens unit L2 is located in the peripheral region 114. In some embodiments, no light-shielding layer is provided above lens unit L1, while a light-shielding layer is provided above lens unit L2. Furthermore, each lens unit L2 can be referred to as a dummy lens unit. During the manufacturing process of electronic device 10A, the lens definition layer 132 is formed first, and then each lens unit L1 and L2 is formed. The lens defining layer 132 may be a shielding layer, a barrier layer, or may include a metal mesh disposed on the lens defining layer. The metal mesh may have touch functionality and may be electrically connected to the wires 116 or 126, but is not limited thereto. The lens defining layer 132 may also be made of a hydrophilic or hydrophobic material and have different hydrophilicity / hydrophobicity than the surface of the insulating layer 130. In other embodiments, the lens defining layer 132 may be made of an opaque material. The electronic device 10A may further include an insulating layer 140 disposed on the insulating layer 130 and covering the lens unit L1, lens unit L2, and lens defining layer 132. The electronic device 10A may further include a plurality of filters 150R, 150G, and 150B disposed on the insulating layer 140. Among them, filter 150R is a red filter, filter 150G is a green filter, and filter 150R is a blue filter. One of the multiple filters 150R, 150G, and 150B is disposed on lens unit L1, while at least two of the multiple filters 150R, 150G, and 150B are disposed on lens unit L2. Taking Figure 2 as an example, lens unit L1 is provided with a filter 150R, while each lens unit L2 is provided with a filter 150R, a filter 150G, and a filter 150B. Because the three different colored filters 150R, 150G, and 150B are disposed on lens unit L2, most of the light from lens unit L2 will be filtered out by filters 150R, 150G, and 150B, resulting in the brightness of the electronic device 10A in the area corresponding to lens unit L2 being lower than the brightness of other areas of the electronic device 10A. Furthermore, since only one color filter is provided on the lens unit L1, the brightness of the electronic device 10A in the area corresponding to the lens unit L1 will be higher than the brightness of the area corresponding to the lens unit L2.In Figure 1, the electronic device 10A includes multiple lens units L1, and the color of the filter on each lens unit L1 can be different. For example, filters 150R, 150G, and 150B can be respectively disposed on three adjacent lens units L1, forming the red sub-pixel, green sub-pixel, and blue sub-pixel of the electronic device 10A, respectively. Furthermore, as shown in Figure 2, the filter 150R on lens unit L1 and the filter 150R on lens unit L2 can be the same filter, and filter 150R overlaps with filters 150G and 150B. Specifically, filter 150G completely overlaps with filter 150R, while filter 150R partially overlaps with filters 150G and 150B. Additionally, the width of lens unit L2 is smaller than the width of filters 150G and 150B. Wherein, the width of lens unit L2 refers to the maximum width of lens unit L2 measured in direction X, the width of filter 150G refers to the maximum width of filter 150G measured in direction X, and the width of filter 150B refers to the maximum width of filter 150B measured in direction X.

[0019] Furthermore, the height of lens unit L1 is H12, the radius of curvature of lens unit L1 is R1, the distance between lens unit L1 and filter 150R is H11, and the contact angle between lens unit L1 and insulating layer 130 is θ1. The height of lens unit L2 is H22, the radius of curvature of lens unit L2 is R2, the distance between lens unit L2 and filter 150G is H21, and the contact angle between lens unit L2 and insulating layer 130 is θ2. The height H12 may or may not be equal to H22, the radius of curvature R1 may or may not be equal to the radius of curvature R2, the distance H11 may or may not be equal to the distance H21, and the contact angle θ1 may or may not be equal to the contact angle θ2. Generally, the contact angles θ1 and θ2 can be greater than 30 degrees to avoid total internal reflection of light due to the lens units L1 and L2 being too flat; and the contact angles θ1 and θ2 can be less than 90 degrees to avoid side leakage of light from the electronic device 10A caused by the side leakage light being deflected to the side of the electronic device 10A.

[0020] Please refer to Figures 3 and 4. Figure 3 is a top view of an electronic device 10B according to another embodiment of this disclosure, and Figure 4 is a cross-sectional view of the electronic device 10B in Figure 3 along the dashed line ABCE. The dashed line ABCE is formed by connecting multiple points A, B, C, and E. The electronic device 10B includes a substrate 110, a plurality of transistors Q, at least one lens unit L1, and at least one lens unit L2. Each transistor Q is disposed on the substrate 110 and has a channel L. Both lens units L1 and L2 are disposed on the substrate 110, and the number of channels L overlapping with lens unit L1 in all transistors Q is different from the number of channels L overlapping with any lens unit L2 in all transistors Q. As can be seen from Figure 4 of this embodiment, the number of channels L overlapping with lens unit L1 in all transistors Q is one, while the number of channels L overlapping with lens unit L2 in all transistors Q is zero. Therefore, the number of channels L overlapping with lens unit L1 in the multiple transistors Q is less than the number of channels L overlapping with lens unit L2 in the multiple transistors Q. Furthermore, the outline of lens unit L1 in the top view differs from that of lens unit L2 in the top view. In this disclosure, "different outlines" means, for example, that there is no proportional scaling relationship between the two; conversely, if there is a proportional scaling relationship, it is considered "same outlines." As shown in Figure 3, the outline of lens unit L1 in the top view is circular, while the outline of lens unit L2 in the top view is teardrop, elliptical, or non-spherical, thus there is no proportional scaling relationship between lens unit L1 and lens unit L2. For example, the curvature variation of lens unit L1 in different sections of its surface is smaller than that of lens unit L2. Moreover, lens unit L1 and lens unit L2 are separate from each other. Additionally, lens unit L2 can extend along both the Y and X directions.

[0021] The substrate 110 includes an active region 112 and a peripheral region 114 adjacent to the active region 112. As shown in Figure 3, in this embodiment, all lens units L1 are disposed in the active region 112, and all lens units L2 are disposed in the peripheral region 114. Furthermore, the active region 112 has multiple light-transmitting regions 160A and 160B surrounding the lens units L1. The multiple lens units 160A and 160B surrounding the lens units L1 can be separated from each other without direct contact, or they can be connected to each other. More specifically, the multiple lens units 160A and 160B surrounding the lens units L1 only need to be disposed around the lens units L1. In this embodiment, the minimum distance D1 between two adjacent lens units L1 is less than the minimum distance D2 between two adjacent lens units L2. The electronic device 10B may further include a driving circuit 118 and a conductive layer M1. The conductive layer M1 is disposed on the substrate 110 and has multiple conductive lines 116. A wire 116 is coupled to a driving circuit 118, which in turn drives a transistor Q disposed in the active region 112 via the wire 116. The electronic device 10B may further include an insulating layer 120 disposed on the substrate 110 and covering the driving circuit 118 and the conductive layer M1. The insulating layer 120 on the active region 112 may be composed of multiple layers and form grooves Gv to constitute light-transmitting regions 160A or 160B. The sidewalls of the grooves Gv may form a stepped topography due to the multilayer structure of the insulating layer 120. Furthermore, the shape of the light-transmitting region 160A may differ from that of the light-transmitting region 160B to reduce light diffraction of the electronic device 10B. In this embodiment, the light-transmitting regions 160A and 160B are arranged alternately. Furthermore, the substrate 110, insulating layer 130, and insulating layer 140 may be made of a light-transmitting material, allowing light to pass through the electronic device 10B via the substrate 110, insulating layer 130, and insulating layer 140 within the light-transmitting areas 160A and 160B. Additionally, the conductive lines 116 and / or the defining layer 128 may be made of an opaque material, and opaque objects (i.e., objects that block or reflect light) in the electronic device 10B may be disposed outside the light-transmitting areas 160A and 160B, thus offsetting the opaque objects from the light-transmitting areas 160A and 160B. These opaque objects may include, but are not limited to, the black matrix (BM), white matrix, pixel definition layer (PDL), and / or metal lines of the electronic device 10B. The electronic device 10B may also include the defining layer 128 and multiple light-emitting units E1, E2, and E3 disposed on the insulating layer 120. The definition layer 128 may be, but is not limited to, a pixel definition layer, and the light-emitting units E1, E2, and E3 may be, but are not limited to, light-emitting diodes. The electronic device 10B may further include an insulating layer 130 disposed on the insulating layer 120 and covering the definition layer 128 and the light-emitting units E1, E2, and E3.In this embodiment, lens units L1 and L2 are both disposed on insulating layer 130. Electronic device 10B may further include insulating layer 140, disposed on insulating layer 130 and covering lens units L1 and L2. Each light-emitting unit E1, E2, and E3 has a lens unit L1 disposed thereon to form a light-emitting area EA. Therefore, lens unit L1 overlaps with at least one of the multiple light-emitting units E1, E2, and E3, while lens unit L2 does not overlap with the multiple light-emitting units E1, E2, and E3. Furthermore, each light-emitting unit E1, E2, and E3 is coupled to a corresponding transistor Q through conductor 190 and emits light under the control of transistor Q. Electronic device 10B may further include multiple scan lines 170 and multiple data lines 180, and neither scan lines 170 nor data lines 180 overlap with light-transmitting areas 160A and 160B. Driving circuit 118 can drive transistor Q disposed in active area 112 through scan lines 170.

[0022] Please refer to Figures 5 and 6. Figure 5 is a top view of an electronic device 10C according to another embodiment of this disclosure, and Figure 6 is a cross-sectional view of the electronic device 10C in Figure 5 along the dashed line ABCE. The electronic device 10C includes a substrate 110, a plurality of transistors Q, at least one lens unit L1, and at least one lens unit L2. Each transistor Q is disposed on the substrate 110 and has a channel L. Both lens units L1 and L2 are disposed on the substrate 110, but the number of channels L overlapping with lens unit L1 in all transistors Q is different from the number of channels L overlapping with any lens unit L2 in all transistors Q. As can be seen from Figure 6 of this embodiment, the number of channels L overlapping with lens unit L1 in all transistors Q is one, while the number of channels L overlapping with lens unit L2 in all transistors Q is zero. As shown in Figure 5, the outlines of lens unit L1 and lens unit L2 in the top view are both circular.

[0023] The substrate 110 includes an active region 112 and a peripheral region 114 adjacent to the active region 112. As shown in Figure 5, in this embodiment, all lens units L1 are disposed in the active region 112, while lens units L2 are partially disposed in the peripheral region 114 and partially disposed in the active region 112. Furthermore, the active region 112 has a plurality of light-transmitting regions 160 surrounding the lens units L1. The electronic device 10C may further include a driving circuit 118 and a conductive layer M1. The conductive layer M1 is disposed on the substrate 110 and has a plurality of wires 116. The wires 116 are coupled to the driving circuit 118, and the driving circuit 118 can drive the transistor Q disposed in the active region 112 through the wires 116. The electronic device 10C may further include an insulating layer 120 disposed on the substrate 110 and covering the driving circuit 118 and the conductive layer M1. The insulating layer 120 on the active region 112 may be composed of a multilayer structure and form grooves Gv to constitute the light-transmitting regions 160. The sidewalls of the groove Gv can form a stepped terrain due to the multi-layer structure of the insulating layer 120. The electronic device 10C may further include a defining layer 128 and multiple light-emitting units E1, E2, and E3 disposed on the insulating layer 120. The electronic device 10C may further include an insulating layer 130 disposed on the insulating layer 120 and covering the defining layer 128 and the light-emitting units E1, E2, and E3. In this embodiment, the lens units L2 in the peripheral region 114 are all disposed on the insulating layer 120, while the lens units L1 and L2 in the active region 112 are all disposed on the insulating layer 130. The electronic device 10C may further include a lens defining layer 132 disposed on the insulating layer 130 and formed between each lens unit L1 and L2. The electronic device 10C may further include an insulating layer 140 disposed on the insulating layer 130 and covering the lens units L1, L2, and the lens defining layer 132. Each light-emitting unit E1, E2, and E3 is provided with a lens unit L1 to form a light-emitting area EA. Furthermore, the edge of the light-transmitting area 160 may overlap with multiple lens units L2, but this disclosure is not limited thereto. For example, the edge of the light-transmitting area 160 may overlap with a single lens unit L2. The edge of the light-transmitting area 160 may be the boundary between an opaque material (e.g., wire 116) and a transparent material (e.g., insulating layer 120), or, when the insulating layer 120 is opaque, the bottom or top of the groove Gv. By arranging the edge of the light-transmitting area 160 to overlap with multiple lens units L2, the edge of the light-transmitting area 160 can be roughened, thereby reducing light diffraction. Furthermore, the area of ​​the lens unit L1 provided on the light-emitting unit E1 is larger than the area of ​​the lens unit L1 provided on the light-emitting unit E2, and larger than the area of ​​the lens unit L1 provided on the light-emitting unit E3. The area of ​​each lens unit L1 or L2 refers to the range of the lens unit L1 or L2 observed when viewing the electronic device 10C from above (as shown in Figure 5, when viewing the electronic device 10C in the opposite direction of direction Z).

[0024] Please refer to Figures 7 and 8. Figure 7 is a top view of an electronic device 10D according to another embodiment of this disclosure, and Figure 8 is a cross-sectional view of the electronic device 10D in Figure 7 along the dashed line ABCE in Figure 7. The electronic device 10D includes a substrate 110, a plurality of transistors Q, at least one lens unit L1, and at least one lens unit L2. Each transistor Q is disposed on the substrate 110 and has a channel L. Both lens units L1 and L2 are disposed on the substrate 110, and the number of channels L overlapping with lens unit L1 in all transistors Q is different from the number of channels L overlapping with any lens unit L2 in all transistors Q. As can be seen from Figure 6 of this embodiment, the number of channels L overlapping with lens unit L1 in all transistors Q is one, while the number of channels L overlapping with lens unit L2 in all transistors Q is zero. As shown in Figure 7, the outlines of lens unit L1 and lens unit L2 in the top view are both circular.

[0025] The substrate 110 includes an active region 112 and a peripheral region 114 adjacent to the active region 112. As shown in Figure 5, in this embodiment, all lens units L1 are disposed in the active region 112, while lens units L2 are partially disposed in the peripheral region 114 and partially disposed in the active region 112. Furthermore, the active region 112 has a plurality of light-transmitting regions 160 surrounding the lens units L1. The electronic device 10D may further include a driving circuit 118 and a conductive layer M1. The conductive layer M1 is disposed on the substrate 110 and has a plurality of wires 116. The wires 116 are coupled to the driving circuit 118, and the driving circuit 118 can drive the transistor Q disposed in the active region 112 through the wires 116. The electronic device 10D may further include an insulating layer 120 disposed on the substrate 110 and covering the driving circuit 118 and the conductive layer M1. Grooves Gv are formed in the insulating layer 120 on the active region 112 to form the light-transmitting regions 160. The electronic device 10D may further include a defining layer 128 and a plurality of light-emitting units E1, E2, and E3 disposed on the insulating layer 120. The electronic device 10D may further include an insulating layer 130 disposed on the insulating layer 120 and covering the defining layer 128 and the light-emitting units E1, E2, and E3. The electronic device 10D may further include a ring structure 138 disposed on the insulating layer 130 and surrounding the edge of the light-transmitting area 160 to roughen the edge of the light-transmitting area 160, thereby reducing light diffraction. The electronic device 10D may further include an insulating layer 136 disposed on the insulating layer 120 and the ring structure 138. In this embodiment, lens units L1 and L2 are both disposed on the insulating layer 136. The electronic device 10D may further include an insulating layer 140 disposed on the insulating layer 136 and covering lens units L1, lens units L2, and the insulating layer 136. Each lens unit L1 covers one light-emitting unit E1, one light-emitting unit E2, and one light-emitting unit E3 to form a light-emitting area EA. In this embodiment, the top surface 142 of the insulating layer 140 is recessed in the opposite direction of Z at the junction of the active area 112 and the peripheral area 114, and the top surface 142 of the insulating layer 140 is arc-shaped and convex in the direction of Z in the peripheral area 114. Furthermore, the contour of the portion A1 where the top surface 142 of the insulating layer 140 overlaps with the lens unit L1 is different from the contour of the portion A2 where the top surface 142 of the insulating layer 140 overlaps with the lens unit L2. The method for determining the contour can be described as follows, but is not limited to:

[0026] Method 1: The contours of the overlapping parts A1 and A2 can be determined by measuring them using an atomic force microscope (AFM).

[0027] Method 2: When the distance between the overlapping portion A1 and the insulating layer 136 is different from the distance between the overlapping portion A2 and the insulating layer 136, it can be determined that the contour of the overlapping portion A1 is different from the contour of the overlapping portion A2. For example, in Figure 8, in a cross-section, the distances between the overlapping portion A1 and the left, bottom center point, and right side of the lens unit L1 are h11, h12, and h13, respectively, while the distances between the overlapping portion A2 and the left, bottom center point, and right side of the lens unit L2 are h21, h22, and h23, respectively. The absolute differences between distances h11, h12, and h13 are greater than the absolute differences between distances h21, h22, and h23. Taking the bottom center point of the same lens unit as an example, the absolute difference between distances h12 and h11 is greater than the absolute difference between distances h22 and h21, and the absolute difference between distances h12 and h13 is less than the absolute difference between distances h22 and h23. Therefore, it can be determined that the outline of the overlapping part A1 is different from the outline of the overlapping part A2.

[0028] Method 3: When the curvature of the overlapping portion A1 is different from the curvature of the overlapping portion A2, it can be determined that the contour of the overlapping portion A1 is different from the contour of the overlapping portion A2. The curvature of the overlapping portion A1 can be determined by three different points of the overlapping portion A1 in the electronic device 10D, and the curvature of the overlapping portion A2 can be determined by three different points of the overlapping portion A2 in the electronic device 10D. For example, the left, bottom center point, and right side of lens unit L1 are projected onto the overlapping portion A1 at points a, b, and c along the Z direction, respectively, while the left, bottom center point, and right side of lens unit L2 are projected onto the overlapping portion A2 at points e, f, and g, respectively. The curvature formed by the three points a, b, and c is different from the curvature formed by the three points e, f, and g, therefore it can be determined that the contour of the overlapping portion A1 is different from the contour of the overlapping portion A2.

[0029] Please refer to Figure 9, which is a cross-sectional view of an electronic device 10E according to another embodiment of this disclosure. The electronic device 10E has a similar structure to the electronic device 10D, but the main difference lies in that: the electronic device 10E does not include the insulating layer 136 and the annular structure 138, and the lens unit L2 in the active region 112 of the electronic device 10E is disposed within the light-transmitting region 160 and formed within the groove Gv of the insulating layer 120 on the substrate 110. Therefore, in the normal direction (i.e., direction Z) of the substrate 110, the distance between the lens unit L1 and the substrate 110 is different from the distance between the lens unit L2 and the substrate 110 in the active region 112. Furthermore, the top surface of the insulating layer 140 has a wavy profile on the top surface of the peripheral region 114.

[0030] Please refer to Figure 10, which is a cross-sectional view of an electronic device 10F according to another embodiment of this disclosure. The electronic device 10F has a similar structure to the electronic device 10E, but the main difference lies in that the lens unit L2 in the active region 112 of the electronic device 10F is disposed within the light-transmitting region 160 and formed on the insulating layer 130. Furthermore, the top surface of the insulating layer 140 is arc-shaped, convex in the Z direction, while the top surface of the insulating layer 130 is arc-shaped, concave in the opposite direction to the Z direction, on the top surface of the peripheral region 114. The lens unit L2 overlaps with one of the light-transmitting regions 160.

[0031] Please refer to Figures 11 and 12. Figure 11 is a top view of an electronic device 10G according to another embodiment of this disclosure, and Figure 12 is a cross-sectional view of the electronic device 10G in Figure 11 along the dashed line ABC in Figure 11. The electronic device 10G includes a substrate 110, a plurality of transistors Q, at least one lens unit L1, and at least one lens unit L2. Each transistor Q is disposed on the substrate 110 and has a channel L. Both lens units L1 and L2 are disposed on the substrate 110, and the number of channels L overlapping with lens unit L1 in all transistors Q is different from the number of channels L overlapping with any lens unit L2 in all transistors Q. As can be seen from Figure 12 of this embodiment, the number of channels L overlapping with lens unit L1 in all transistors Q is one, while the number of channels L overlapping with lens unit L2 in all transistors Q is zero. As shown in Figure 11, the outlines of lens unit L1 and lens unit L2 in the top view are both circular, or they can be elliptical.

[0032] The substrate 110 includes an active region 112 and a peripheral region 114 adjacent to the active region 112. As shown in Figure 11, in this embodiment, all lens units L1 are disposed in the active region 112, and all lens units L2 are disposed in the peripheral region 114. Furthermore, the active region 112 has multiple light-transmitting regions 160 surrounding the lens units L1. The electronic device 10G may further include a driving circuit 118 and a conductive layer M1. The conductive layer M1 is disposed on the substrate 110 and has multiple conductive lines 116. The conductive lines 116 are coupled to the driving circuit 118, and the driving circuit 118 can drive the transistor Q disposed in the active region 112 via the conductive lines 116. The electronic device 10G may further include an insulating layer 120 disposed on the substrate 110 and covering the driving circuit 118 and the conductive layer M1. The electronic device 10G may further include a defining layer 128 and multiple light-emitting units E1, E2, and E3 disposed on the insulating layer 120. The electronic device 10G may further include an insulating layer 130 disposed on the insulating layer 120 and covering the defining layer 128 and the light-emitting units E1, E2, and E3. In this embodiment, lens units L1 and L2 are both disposed on the insulating layer 130. The electronic device 10G may further include a lens defining layer 132 disposed on the insulating layer 130 and formed between each lens unit L1 and L2. The electronic device 10G may further include an insulating layer 140 disposed on the insulating layer 130 and covering the lens units L1 and L2. Each light-emitting unit E1, E2, and E3 is provided with a lens unit L1, and a light-shielding layer 158 is provided above the lens defining layer 132 and each lens unit L2, so that the area outside the light-shielding layer 158 constitutes the light-emitting area EA, the light-transmitting area 160, and the light-transmitting area 162. The light-transmitting area 160 is formed within the active area 112, and the light-transmitting area 162 is formed within the peripheral area 114. The area of ​​the light-transmitting area 160 differs from the area of ​​the light-transmitting area 162. For example, the area of ​​the light-transmitting area 162 can be between 1.1 and 10 times that of the light-transmitting area 160. This balances the overall transparency between the active area 112 and the peripheral area 114, resulting in a better overall viewing experience. Furthermore, in the cross-sectional view of the electronic device 10G as shown in Figure 12, the center point of the light-shielding layer 158 within the peripheral area 114 is offset by a distance Ds towards the active area 112 relative to the center point of the lens unit L2, and this offset Ds can be greater than 0.1 times the width W of the lens unit L2 (i.e., Ds ≥ 0.1W). This arrangement further reduces side light leakage in the electronic device 10G. Additionally, in the cross-sectional view of the electronic device 10G as shown in Figure 12, the center line N1 of the lens unit L2 may not overlap with the center line N2 of the light-shielding layer 158. However, in other embodiments, the center line N1 may overlap with the center line N2.The center line N1 passes through the center point of the lens unit L2 and is parallel to the normal direction (i.e., direction Z) of the lens unit L2, while the center line N2 passes through the center point of the light-shielding layer 158 and is parallel to the normal direction (i.e., direction Z) of the light-shielding layer 158.

[0033] Please refer to Figure 13, which is a cross-sectional view of an electronic device 10H according to another embodiment of this disclosure. The structure of electronic device 10H is similar to that of electronic device 10G in Figure 12, but the main differences between the two are: (1) Electronic device 10H further includes a light-shielding layer 124 formed on insulating layer 120 to prevent internal reflection of lens units L1 and L2; (2) Lens units L1 and L2 of electronic device 10H are connected to each other, and there is no lens defining layer 132 between them; and (3) Electronic device 10H further includes a plurality of filters 150R, 150G and 150B disposed on insulating layer 140, without a light-shielding layer 158. The width of lens unit L2 is smaller than the width of each filter 150R, 150G and 150B on lens unit L2. In the cross-sectional view of the electronic device 10H as shown in Figure 13, the center line N1 of the lens unit L2 is closer to the lens unit L1 than the center line N2 of the filters 150G and 150B. The center line N1 passes through the center point of the lens unit L2 and is parallel to the normal direction (i.e., direction Z) of the lens unit L2, while the center line N2 passes through the center points of both the filters 150G and 150B and is parallel to the normal direction (i.e., direction Z) of the filters 150G and 150B.

[0034] Please refer to Figure 14, which is a cross-sectional view of an electronic device 10I according to another embodiment of this disclosure. The structure of electronic device 10I is similar to that of electronic device 10G in Figure 12, but the main differences between the two are: (1) The insulating layer 130 of electronic device 10I includes two sub-insulating layers 130-1 and 130-2; (2) Electronic device 10I further includes a light-shielding layer 124, which is formed on the sub-insulating layer 130-1 of the insulating layer 130 and covered by the sub-insulating layer 130-2, and is located above the defining layer 128; (3) The lens units L1 and L2 of electronic device 10I are Fresnel lenses and each has multiple threaded structures 165; (4) Electronic device 10I further includes multiple filters 150R, 150G and 150B, disposed on the insulating layer 140, without a light-shielding layer 158; (5) Electronic device 10I further includes a dummy pattern. (6) A cross-sectional view of the electronic device 10I is also shown, which includes a light-emitting unit E2 and its corresponding transistor Q, lens unit L1, and filter 150B. The width of the lens unit L2 is smaller than the width of each filter 150R, 150G, and 150B on the lens unit L2. When the lens units L1 and L2 are implemented as Fresnel lenses, the thickness of the electronic device 10I can be reduced, and when the lens defining layer 132 is a metal mesh and has a touch function, its touch sensitivity can be increased. In addition, a metal layer 125 can be provided in the pseudo-pattern 123, through which the electronic device 10I can transmit signals.

[0035] In the above embodiments, the outlines of lens units L1 and L2 in the top view of the electronic device can be circular, while in other embodiments disclosed herein, the outlines of lens units L1 and L2 in the top view of the electronic device can be rectangular. Please refer to Figure 15, which is a top view of an electronic device 10J according to another embodiment of this disclosure. The electronic device 10J includes multiple light-emitting units E1, E2, and E3 and multiple lens units L1, L2, L1', and L2'. The outlines of lens units L1 and L2 in the top view are circular, while the outlines of lens units L1' and L2' are rectangular. Each lens unit L1 and L1' corresponds to one or more of the light-emitting units E1, E2, and E3, while lens units L2 and L2' do not correspond to any light-emitting unit. The angle of view of the light emitted by lens unit L1' is wider than that of the light emitted by lens unit L1. Furthermore, it is noteworthy that the lens units L1, L2, L1', and L2' are cylindrical in shape in the perspective view of the electronic device 10J. Additionally, in the top view of the electronic device 10J, each lens unit L1 is completely covered by its corresponding filter 150R, 150G, or 150B, and the area of ​​each lens unit L1 is smaller than the area of ​​its corresponding filter 150R, 150G, or 150B; similarly, lens unit L1' is completely covered by its corresponding filter 150B', and the area of ​​lens unit L1' is smaller than the area of ​​its corresponding filter 150B'. Furthermore, the range of filter 150R' extends beyond the range of its corresponding lens unit L1', and the range of filter 150G' extends beyond the range of its corresponding lens unit L1'.

[0036] Please refer to Figure 16, which is a cross-sectional view of an electronic device 10K according to another embodiment of this disclosure. The electronic device 10K includes a substrate 110, a plurality of transistors Q, a plurality of lens units L1, a plurality of lens units L2, an insulating layer 120, a defining layer 128, an insulating layer 130, a lens defining layer 132, an insulating layer 140, light-emitting units E1 and E2, and circuitry 90. The insulating layer 140 includes an upper surface that convexes upwards in the Z direction along with the arrangement of the lens units L1 and L2. Furthermore, the plurality of lens units L1 and L2 may have different shapes; for example, the plurality of lens units L1 and L2 may have different upper surface curvatures or lower surface curvatures. The electronic device 10K can control the direction of light emitted by the light-emitting units E1 and E3 by matching the refractive indices of the insulating layer 140, the lens units L1, and the lens units L2. For example, the refractive index of the insulating layer 140 can be 1.3 to 1.5, while the refractive indices of the lens units L1 and L2 can be 1.5 to 1.9. Furthermore, the integrated circuit 90 is disposed below the substrate 110 and relative to one of the lens units L2. The integrated circuit 90 can be coupled to the transistor Q via a wire 92. The user can view the integrated circuit 90 and the wire 92 through the lens unit L2 to confirm that the integrated circuit 90 and the wire 92 are properly coupled. Additionally, the lens unit L2 on the right side of Figure 16 corresponds to a set of functional pads E0, and the function of the functional pads E0 can be to establish relevant repair or testing circuits when there is a need to repair or test the electronic device 10K, but is not limited thereto. In other embodiments, the electronic component may include a light-emitting unit E1 or E3 and the integrated circuit 90, but is not limited thereto. The electronic device 10K may also include another substrate 100.

[0037] Please refer to Figure 17, which is a cross-sectional view of an electronic device 10L according to another embodiment of this disclosure. The electronic device 10L includes a substrate 110, a transistor Q, lens units L1 and L2, an insulating layer 120, a defining layer 128, an insulating layer 130, a lens defining layer 132, an insulating layer 140, a light-emitting unit E1, and a functional pad E0. The functional pad E0 may have two conductive structures 190 and 191, and the width W3 of the functional pad E0 may be defined as the distance in the X direction between the farthest ends of the two conductive structures 190 and 191. In other embodiments, the functional pad E0 may have a single conductive structure 190 or 191, and the width of the functional pad E0 is defined as the width of this conductive structure 190 or 191 in the X direction. Furthermore, the lens unit L1 is disposed on the light-emitting unit E1, and the width of the lens unit L1 is smaller than the width of the light-emitting unit E1. Lens unit L2 is disposed on functional pad E0, and the width of lens unit L2 is smaller than the width of functional pad E0.

[0038] Please refer to Figure 18, which is a cross-sectional view of two electronic devices 10M and 10N according to another embodiment of this disclosure. Electronic devices 10M and 10N respectively include a substrate 110, a transistor Q, lens units L1 and L2, an insulating layer 120, a defining layer 128, an insulating layer 130, a lens defining layer 132, an insulating layer 140, light-emitting units E1 and E3, a driving circuit 118, and multiple filters 150R, 150G, and 150B. Electronic devices 10M and 10N also each include a side functional layer 117 formed on the sides of the substrate 110 and the insulating layer 120. Lens units L2 are further disposed on the sides of the substrate 110 and the insulating layer 120 to enhance the structural strength of the side functional layer 117. Electronic devices 10M and 10N can be coupled to each other through the side functional layers 117. Examples of side functional layers 117 include side wiring, side protective layers, side adhesive layers, or side light-shielding layers, but are not limited thereto. Furthermore, electronic devices 10M and 10N also include light-shielding layers 197 disposed on the sides of insulating layers 130 and 140, respectively, to reduce side light leakage of electronic devices 10M and 10N. Additionally, the width of the lens unit L2 disposed on the side of electronic devices 10M and 10N may be greater than the width of the lens unit L1.

[0039] In the above description, the width, height, spacing, minimum distance, etc. of each component can be measured using an optical microscope (OM), scanning electron microscope (SEM), transmission electron microscope (TEM), scanning tunneling microscope (STM), or atomic force microscope (AFM).

[0040] The electronic device disclosed in the above embodiment can enhance the structural strength of the electronic device and improve the shape stability and uniformity between each lens unit L1 and L2 by providing lens unit L2 in the peripheral region 114 of the substrate, thereby improving the overall optical effect of the electronic device. The above description is merely an embodiment of this disclosure. All equivalent changes and modifications made within the scope of the claims of this disclosure shall fall within the scope of this disclosure.

[0041] 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I, 10J, 10K, 10L, 10M, 10N: Electronic devices 90: Integrated Circuits 92: Wire 100, 110: Substrate 112: Active Zone 114: Surrounding Area 116: Conductor 117: Side Functional Layer 118: Drive Circuit 120: Insulation layer 123: Pseudo-graphics 124: Light-shielding layer 125: Metal layer 126: Conductor 128: Definition Layer 130: Insulation layer 130-1, 130-2: Sub-insulation layer 132: Lens Definition Layer 136: Insulation layer 138: Insulation layer 140: Insulation layer 142: Top surface 150R, 150G, 150B, 150R', 150G', 150B': Filters 158: Light-shielding layer 160, 160A, 160B: Light-transmitting area 165: Threaded Structure 170: Scan line 180: Data Line 190: Conductor 197: Light-shielding layer A, B, C, E, a, b, c, d, e, f: points A1, A2: Overlapping parts D: Jiji D1, D2: Minimum distance Ds: Offset E0: Functional pad E1, E2, E3: Light-emitting units EA: Emitting area G: Gate Gv: Groove H12, H22: Height W, W3: Width H11, H21, W1, W2: Spacing h11, h12, h13, h21, h22, h23: Distance L: Channel L1, L1', L2, L2': Lens units M1, M2: Conductive layers N1, N2: Center lines Q: Transistor R1, R2: Radius of curvature S: Source X, Y, Z: Direction θ1, θ2: Contact angles

Claims

1. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; a second lens unit is disposed on the substrate; and a plurality of light-emitting units are disposed on the substrate; wherein the number of channels in the plurality of transistors that overlap with the first lens unit is different from the number of channels in the plurality of transistors that overlap with the second lens unit; and wherein the first lens unit overlaps with at least one of the plurality of light-emitting units, the second lens unit does not overlap with the plurality of light-emitting units, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends along a direction.

2. The electronic device of claim 1, wherein the number of channels overlapping the first lens unit among the plurality of transistors is greater than the number of channels overlapping the second lens unit among the plurality of transistors.

3. The electronic device as claimed in claim 1, wherein the first lens unit and the second lens unit are separate from each other.

4. The electronic device as claimed in claim 1, further comprising a conductive layer disposed on the substrate and having a plurality of wires; wherein the spacing between two adjacent wires located below the first lens unit is smaller than the spacing between another two adjacent wires located below the second lens unit.

5. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; A second lens unit is disposed on the substrate; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein the distance between the first lens unit and the substrate is different from the distance between the second lens unit and the substrate in a normal direction of the substrate, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends along a direction.

6. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; A second lens unit is disposed on the substrate; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein the area of ​​the electronic device is divided into an active area and a peripheral area adjacent to the active area, the plurality of first lens units are disposed in the active area, and the plurality of second lens units are disposed in the peripheral area, wherein the minimum distance between two adjacent first lens units in the plurality of first lens units is less than the minimum distance between two adjacent second lens units in the plurality of second lens units, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends in one direction.

7. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; A second lens unit is disposed on the substrate; An insulating layer is disposed on the first lens unit and the second lens unit, and has a top surface; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein the contour of the portion of the top surface overlapping with the first lens unit is different from the contour of the other portion of the top surface overlapping with the second lens unit, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends in one direction.

8. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; A second lens unit is disposed on the substrate; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein the area of ​​the electronic device is divided into an active region and a peripheral region adjacent to the active region, the active region having a plurality of light-transmitting areas surrounding the first lens unit, and the first lens unit and the second lens unit having different shapes, and the second lens unit extending in one direction.

9. The electronic device of claim 8, wherein the peripheral region has a plurality of light-transmitting areas, and the area of ​​one of the plurality of light-transmitting areas of the active region is different from the area of ​​one of the plurality of light-transmitting areas of the peripheral region.

10. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; A second lens unit is disposed on the substrate; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein the area of ​​the electronic device is divided into an active region and a peripheral region adjacent to the active region, the active region having a plurality of light-transmitting regions, and the second lens unit overlapping with one of the plurality of light-transmitting regions, wherein the first lens unit and the second lens unit have different shapes, and the second lens unit extends in one direction.

11. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; A second lens unit is disposed on the substrate; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein the area of ​​the electronic device is divided into an active region and a peripheral region adjacent to the active region, the active region having a plurality of light-transmitting regions, the second lens unit overlapping with the edge of one of the plurality of light-transmitting regions, and the first lens unit and the second lens unit having different shapes, and the second lens unit extending in one direction.

12. The electronic device of claim 1, further comprising a red filter, a blue filter and a green filter, wherein one of the red filter, the blue filter and the green filter is disposed on the first lens unit, and at least two of the red filter, the blue filter and the green filter are disposed on the second lens unit.

13. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; a second lens unit is disposed on the substrate; a first filter is disposed on the first lens unit; A second filter is disposed on the second lens unit and overlaps with the first filter; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends in one direction.

14. The electronic device of claim 13, wherein the first filter overlaps with the first lens unit and the second lens unit.

15. The electronic device as claimed in claim 14, wherein the second filter and the first filter are of different colors.

16. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; a second lens unit is disposed on the substrate; A filter is disposed on the second lens unit; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein in a cross-sectional view of the electronic device, the width of the second lens unit is smaller than the width of the filter, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends in one direction.

17. An electronic device comprising: One substrate; Multiple transistors are disposed on the substrate, each of the multiple transistors having a channel; A first lens unit is disposed on the substrate; a second lens unit is disposed on the substrate; And a filter; wherein the number of channels overlapping with the first lens unit in the plurality of transistors is different from the number of channels overlapping with the second lens unit in the plurality of transistors; and wherein in a cross-sectional view of the electronic device, a center line of the second lens unit is closer to the first lens unit than a center line of the filter, and the first lens unit and the second lens unit have different shapes, and the second lens unit extends in a direction.

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