Cryogenic micro-zone electrostatic chuck connector assembly

Abstract

The embodiments disclosed herein generally relate to a cryogenic micro-area connection assembly for a substrate support assembly suitable for cryogenic applications. In one or more embodiments, the cryogenic micro-area connection assembly has a first end having a micro-area connector. A second end has a receptacle connection. A flange is disposed between the micro-area connector and the receptacle connection. A wiring harness is coupled to the micro-area connector at the first end, extends through the flange, and is coupled to the receptacle connection at the second end.

Description

Low-temperature micro-area electrostatic chuck connector assembly The embodiments disclosed herein generally relate to equipment and processes for microelectronics manufacturing, and more specifically to substrate support assemblies with electrostatic chuck assemblies for cryogenic applications. Reliably manufacturing nanometer-sized and smaller features is one of the key technological challenges for next-generation Very Large Scale Integration (VLSI) and Extreme Large Scale Integration (ULSI) semiconductor devices. However, as the limits of circuit technology are pushed, the shrinking size of VLSI and ULSI interconnect technologies places additional demands on processing power. Reliably forming gate structures on the substrate is crucial for the success of VLSI and ULSI and for continued efforts to increase the circuit density and quality of individual substrates and wafers. To reduce manufacturing costs, integrated circuit (IC) manufacturers are demanding higher throughput and better device yields and performance for each silicon substrate they process. Some of the manufacturing technologies being explored for next-generation devices currently under development require processing at temperatures below 0°C or even in vacuum as low as -200°C, while simultaneously processing thin films mounted on substrate supports. Some of these low-temperature (sometimes cryogenic, below -153°C) manufacturing techniques are performed in a processing chamber that utilizes an electrostatic chuck to hold the substrate being processed within the chamber. A conventional electrostatic chuck has electrodes for holding the substrate and is part of a substrate support assembly that includes heaters and cooling plates for more precise control of the processing temperature at the substrate. Conventional electrostatic chucks have numerous electrical connectors for coupling power to the heaters and electrodes. For example, an exemplary conventional electrostatic chuck may have more than 150 connectors for coupling power to the heaters and electrodes. In cryogenic applications, a cryogenic fluid circulates within a cooling plate to remove heat from the substrate. The cooling plate may be part of a substrate support assembly operating at atmospheric pressure, while the electrostatic chuck with a heater operates under vacuum pressure. The electrical connectors of the electrostatic chuck must withstand both the vacuum pressure within the substrate support assembly and atmospheric pressure. The cooling plate can be cooled to temperatures below 0°C (e.g., from approximately -10°C to approximately -100°C or lower). At such low temperatures, condensation may form on the electrical connectors heated by the electrostatic chuck, or even ice may form on the cooling plate. Condensation at the electrical connectors can lead to failure modes of the electrical connections and other components of the substrate support assembly due to corrosion and electrical short circuits. Therefore, there is a need for an improved substrate support assembly suitable for low-temperature applications. The embodiments disclosed herein generally relate to a cryogenic micro-area connection assembly for a substrate support assembly suitable for cryogenic applications. In one or more embodiments, the cryogenic micro-area connection assembly has a first end having a micro-area connector. A second end of the cryogenic micro-area connection assembly has a receptacle connection. A flange is disposed between the micro-area connector and the receptacle connection. A wiring harness is coupled to the micro-area connector at the first end. The wiring harness extends through the flange and is coupled to the receptacle connection at the second end. In one or more embodiments, a substrate support assembly configured to operate at temperatures below 0°C is disclosed. The substrate support assembly includes an electrostatic chuck, a cooling plate, and a cryogenic micro-area connection assembly. The electrostatic chuck has a workpiece support surface opposite a bottom surface. The cooling plate has a top surface, a bottom surface, and a cavity extending through the top and bottom surfaces. The cavity of the cooling plate has a recessed step at the bottom surface. A bonding film is disposed between the electrostatic chuck and the cooling plate. The bonding film includes a bonding layer comprising a silicone material. An optional facility plate is coupled to the bottom surface of the cooling plate. The cryogenic micro-area connection assembly has a first end with a micro-area connector. A second end of the cryogenic micro-area connection assembly has a receptacle connection. A flange is disposed between the micro-area connector and the receptacle connection. A wiring harness is coupled to the micro-area connector at the first end. The wiring harness extends through the flange and is coupled to the receptacle connection at the second end. In one or more embodiments, a cryogenic processing chamber is disclosed. The cryogenic processing chamber has a chamber body having sidewalls, a bottom, and a cover surrounding an internal processing area. A substrate support assembly is disposed within the internal processing area. A substrate support assembly configured to operate at temperatures below 0°C is disclosed. The substrate support assembly has an electrostatic chuck, a cooling plate, and a cryogenic micro-area connection assembly. The electrostatic chuck has a workpiece support surface opposite a bottom surface. The cooling plate has a top surface, a bottom surface, and a cavity extending through the top and bottom surfaces. The cavity of the cooling plate has a recessed step at the bottom surface. A bonding film is disposed between the electrostatic chuck and the cooling plate. The bonding film includes a bonding layer comprising a silicone material. An optional facility plate is coupled to the bottom surface of the cooling plate. The cryogenic micro-area connection assembly has a first end with a micro-area connector. A second end of the cryogenic micro-area connection assembly has a receptacle connection. A flange is disposed between the micro-area connector and the receptacle connection. A wiring harness is coupled to the micro-area connector at the first end. The wiring harness extends through the flange and is coupled to the receptacle connection at the second end. The embodiments disclosed herein generally relate to substrate support assemblies suitable for cryogenic applications. Cryogenic processing temperatures as used herein refer to temperatures below 0°C. In one or more embodiments, the substrate support assembly has a cooling plate coupled to an electrostatic chuck, which has an auxiliary heater for discrete temperature control at cryogenic processing temperatures below 0°C and below -10°C, such as temperatures of about -50°C, about -80°C, about -100°C to about -110°C, about -120°C, about -135°C, about -150°C, or about -200°C. For example, the substrate support assembly is used at cryogenic processing temperatures of about -50°C to about -150°C. The substrate support assembly has a main heater and multiple auxiliary heaters. The substrate support assembly includes a cryogenic microzone connection assembly, uniquely configured to operate the auxiliary heaters. The cryogenic microzone connection assembly enables discrete temperature control of the substrate undergoing cryogenic treatment when positioned on an electrostatic chuck. The cryogenic microzone connection assembly includes several electrical connectors, flanges or insulator blocks, and gaskets to connect the auxiliary heaters to a control board located within the substrate support assembly. The arrangement of the flanges and gaskets allows the cryogenic microzone connection assembly to extend from vacuum environments to atmospheric environments and can be used across a wide temperature range without condensation forming on the cryogenic microzone connection assembly or within the substrate support assembly. The cryogenic microzone connection assembly minimizes corrosion and short circuits caused by condensation in the electrical components of the substrate support assembly. Therefore, the cryogenic microzone connection assembly extends the service life and reliability of the substrate support assembly. Figure 1 is a schematic cross-sectional view of an exemplary cryogenic processing chamber 100 (shown as an etching chamber) having a substrate support assembly 126. The substrate support assembly 126 can be used in other types of processing plasma chambers, such as plasma processing chambers, annealing chambers, physical vapor deposition (PVD) chambers, chemical vapor deposition (CVD) chambers, and ion implantation chambers, as well as other systems where it is desirable to control the processing uniformity of a surface or substrate (such as a substrate). Control of dielectric properties tan(δ) (e.g., dielectric loss) or ρ (e.g., the volume resistivity of the substrate support assembly 126 at elevated temperatures) advantageously enables azimuth processing control (e.g., processing uniformity) of the substrate 124 disposed on the substrate support assembly 126. The cryogenic processing chamber 100 includes a chamber body 102 having sidewalls 104, a bottom, and a cover 108 surrounding an internal processing region 110. An injection device 112 is coupled to the sidewalls 104 and / or the cover 108 of the chamber body 102. A gas panel 114 is coupled to the injection device 112 to allow processing gas to be supplied to the internal processing region 110. The injection device 112 may be one or more nozzles or inlet ports, or optionally a nozzle. The processing gas, along with any processing byproducts, is removed from the internal processing region 110 via an exhaust port 128 formed in the sidewalls 104 or the bottom 106 of the chamber body 102. The exhaust port 128 is coupled to a pumping system 132, which includes a throttle valve and a pump for controlling the vacuum level within the internal processing region 110. The process gas can be excited to form plasma within the internal processing region 110. The process gas can be excited by coupling an RF power ground capacitively or inductively to it. In the embodiment depicted in FIG1, a plurality of coils 116 are disposed above the cover 108 of the cryogenic processing chamber 100 and coupled to an RF power supply 120 via a matching circuit 118. Power is supplied to the plurality of coils 116 to inductively couple the power ground to the process gas to form plasma within the internal processing region 110. A substrate support assembly 126 is disposed in the internal processing area 110 below the injection device 112. The substrate support assembly 126 includes an electrostatic chuck (ESC) 174 and a cooling plate 130. The cooling plate 130 is supported by a base plate 176. The base plate 176 is supported by either a side wall 104 or a bottom 106 of the cryogenic processing chamber 100. The substrate support assembly 126 may additionally include a heater assembly (not shown). Furthermore, the substrate support assembly 126 may include a facility plate 145 and / or an insulator plate (not shown) disposed between the cooling plate 130 and the base plate 176 to facilitate electrical, cooling, and gas connections with the substrate support assembly 126. Cooling plate 130 is formed of or otherwise comprises one or more metallic materials. In one or more examples, cooling plate 130 comprises one or more aluminum alloys, one or more aluminum-silicon alloys, one or more aluminum-molybdenum alloys, one or more aluminum-molybdenum-silicon alloys, and other alloys, and / or composite materials as further described and discussed herein. Cooling plate 130 includes a plurality of cooling channels 190 formed therein. Cooling channels 190 are connected to heat transfer fluid source 122. Heat transfer fluid source 122 provides heat transfer fluid (e.g., liquid, gas, or combination thereof) that circulates through one or more cooling channels 190 disposed in cooling plate 130. Fluids flowing through adjacent cooling channels 190 can be isolated to enable localized control of heat transfer between different regions of ESC 174 and cooling plate 130, which helps control the lateral temperature distribution of substrate 124. In one or more embodiments, the heat transfer fluid circulating through the cooling channels 190 of cooling plate 130 maintains cooling plate 130 at a temperature below 0°C, such as about -40°C to about -100°C. ESC 174 generally includes a clamping electrode 186 embedded in a dielectric body 175. The clamping electrode 186 may be configured as a unipolar electrode or a bipolar electrode, or other suitable arrangement. The clamping electrode 186 is coupled to a clamping power supply 187 via an RF filter, the clamping power supply 187 providing DC power to electrostatically hold the substrate 124 to the substrate support surface 137 of the ESC 174. The RF filter prevents RF power used to form plasma (not shown) within the cryogenic processing chamber 100 from damaging electrical equipment or causing electrical hazards outside the chamber. The substrate support surface 137 of ESC 174 includes a gas channel (not shown) for providing back-side heat transfer gas to the gap space defined between substrate 124 and the substrate support surface 137 of ESC 174. ESC 174 also includes a lift pin hole for receiving a lift pin (not shown) for lifting substrate 124 above the substrate support surface 137 of ESC 174 to facilitate robotic transfer into and out of the cryogenic processing chamber 100. A bonding layer 150 is disposed below the ESC 174 and secures the ESC 174 to the cooling plate 130. In other embodiments, as will be further described below, the bonding layer 150 is disposed between the ESC 174 and a lower plate disposed between the ESC 174 and the cooling plate 130. The bonding layer 150 may have a thermal conductivity between about 0.1 W / mK and about 5 W / mK. The bonding layer 150 may be formed of several layers that compensate for different thermal expansions between the ESC 174 and the lower portion of the substrate support assembly 126 (such as, for example, the cooling plate 130). The layers including the bonding layer 150 may be formed of different materials, and these will be discussed with reference to the following figures, which illustrate separate embodiments. ESC 174 includes one or more electrodes 186 for holding a substrate. The electrodes 186 are disposed within a dielectric body 175 of the ESC 174. The dielectric body 175 of the ESC 174 has a substrate support surface 137 and a bottom surface 133 opposite to the substrate support surface 137. The dielectric body 175 of the ESC 174 is made of a ceramic material, such as alumina (Al₂O₃). 2O 3) Aluminum nitride (AlN) or other suitable materials. Alternatively, the dielectric substrate 175 may be made of polymers such as polyimide, polyetheretherketone, polyaryletherketone, etc. The dielectric body 175 optionally includes one or more primary resistance heaters 188 embedded therein. The primary resistance heaters 188 are used to raise the temperature of the substrate support assembly 126 to a temperature suitable for handling the substrate 124 disposed on the substrate support surface 137 of the substrate support assembly 126. The primary resistance heaters 188 are coupled to a heater power supply 189 via a facility plate 145. The heater power supply 189 may provide 900 watts or more of power to the primary resistance heaters 188. A controller (not shown) is used to control the operation of the heater power supply 189, which is generally set to heat the substrate 124 to a predetermined temperature. In one or more embodiments, the primary resistance heaters 188 include a plurality of laterally separated heating regions, wherein the controller enables at least one region of the primary resistance heaters 188 to be preferentially heated relative to primary resistance heaters 188 located in one or more other regions. For example, the primary resistance heaters 188 may be concentrically arranged in a plurality of separate heating regions. In one example, the main resistance heater 188 is arranged in four concentric main heater regions, such as a first main heater region, a second main heater region, a third main heater region, and a fourth main heater region. The main resistance heater 188 can maintain the substrate 124 at a suitable processing temperature, such as between about 180°C and about 500°C, such as greater than about 250°C, such as between about 250°C and about 300°C. In one or more embodiments, the dielectric body 175 of the ESC 174 has a plurality of auxiliary heaters 140 that generate a micro-area effect. The auxiliary heaters 140 form temperature control in small, discrete locations, i.e., micro-areas on the ESC 174. Hereinafter, a micro-area refers to a discrete temperature-controllable region of the ESC 174, wherein there may be 10, about 50, about 80, or about 100 micro-areas to about 120, about 150, about 200, or more micro-areas on the ESC 174. The number of auxiliary heaters 140 can be an order of magnitude larger than the number of primary resistance heaters 188. The auxiliary heaters 140 are used to control the temperature of the ESC 174 at microscopic levels, such as ±5 degrees Celsius, while the primary resistance heaters 188 control the temperature of the ESC 174 at macroscopic levels. The micro-areas are temperature-controlled by the auxiliary heaters 140. The auxiliary heater 140 can be configured in a pattern to effectively generate heat distribution along the surface of the substrate support assembly 126. This pattern can be symmetrical about a midpoint, while providing gaps in and around the holes for lifting pins or other mechanical, fluid, or electrical connections. The auxiliary heaters 140 are arranged in a plurality of cells, i.e., micro-regions. It is contemplated that each auxiliary heater 140 occupies a corresponding single micro-region. Each auxiliary heater 140 has a resistor terminating at a terminal. As current enters one terminal and exits the other, it flows through the resistor's wires and generates heat. The heat released by the resistor is proportional to the square of the current flowing through it. Power design densities can range from approximately 1 watt / unit to approximately 100 watts / unit, such as 10 watts / unit. Each auxiliary heater 140 can be controlled by a controller 142. The controller 142 can turn on a single auxiliary heater 140 or a plurality of auxiliary heaters 140 combined together. In this way, the temperature can be precisely controlled at individual locations along the micro-regions formed in ESC 174, and such individual locations are not limited to concentric rings as known in the art. Although the pattern shown consists of smaller units, the pattern may alternatively have larger and / or smaller units, extend to the edges, or have other forms to form 150 or more discrete micro-regions. In one or more examples, ESC 174 includes approximately 50 to approximately 200 heaters disposed therein. Each heater can be independently activated to control the temperature in a corresponding area. Micro-area connector 201 enables connection of auxiliary heater 140 in cryogenic environments. Figure 2 depicts a schematic cross-sectional side view of a substrate support assembly 126 with micro-area connector 201 according to one or more embodiments described and discussed herein. Micro-area connector 201 is configured to operate in the substrate support assembly 126 at temperatures from approximately 0°C to approximately -140°C. Figure 2 depicts a schematic cross-sectional side view of a substrate support assembly 126 having a cryogenic microzone connection component 200 according to one or more embodiments described and discussed herein. It should be understood that Figure 2 depicts only a portion of the substrate support assembly 126 along its outer periphery and at only one location where the cryogenic microzone connection component 200 is located. It should also be understood that the substrate support assembly 126 may have a plurality of cryogenic microzone connection components 200, for example, at least one cryogenic microzone connection component 200 for each auxiliary heater 140. The substrate support assembly 126 may have a first sidewall 272 extending between the facility plate 145 and the ESC 174. In some examples, the first sidewall 272 is part of the facility plate 145. A gasket 264 is disposed between the first sidewall 272 and the ESC 174. The gasket 264 provides an hermetic seal between the first sidewall 272 and the ESC 174. A second sidewall 276 may extend between the facility plate 145 and the base plate 176. In some examples, the second sidewall 276 is part of the base plate 176. A gasket 266 is disposed between the second sidewall 276 and the facility plate 145. The gasket 266 provides an hermetic seal between the second sidewall 276 and the facility plate 145. Various components of the substrate support assembly 126, such as the bonding layer 150, the cooling plate 130, and the printed circuit board (PC) 270, are disposed inside the sidewalls (first sidewall 272 and second sidewall 276). The first sidewall 272 and the second sidewall 276 are various components of the processing environment detection substrate support assembly 126. Bonding layer 150 secures the bottom 237 of ESC 174 to the top surface 292 of cooling plate 130. Bonding layer 150 includes silicone adhesive 256, molybdenum adhesive 254, and indium adhesive 252. Cavity 242 extends through cooling plate 130 and through bonding layer 150 to expose the bottom 237 of ESC 174. Cavity 242 is aligned with the position of one or more connectors among the plurality of connectors 204 of auxiliary heater 140. The cryogenic microzone connection assembly 200 has a plurality of connectors 204 at a first end 291 and a receptacle connection 206 at a second end 293 away from the first end 291. The cryogenic microzone connection assembly 200 includes a microzone connector 201, a flange 210, and a wiring harness 226. The cryogenic microzone connection assembly 200 may additionally include one or more heaters 280, such as heaters 282, 284. The heaters 280 are disposed below the cooling plate 130. The heaters 280 will be discussed further below. The cryogenic microzone connection assembly 200 is disposed within the substrate support assembly 126 and extends from the ESC 174 at the first end 291 through the cooling plate 130 and the facility plate 145 into the base plate 176 at the second end 293. The micro-connector 201 may be formed of a low-temperature compatible material, such as a material that can be used at temperatures below 200°C. The micro-connector 201 may be formed of polyimide, alumina, ceramic, or other suitable materials. The micro-connector 201 has a plurality of connectors 204. In one example, the micro-connector 201 has 25 to 100 connectors 204, such as 50 connectors 204. Connector 204 can be coupled to and engage with a plurality of corresponding heater connectors 202. Heater connectors 202 are coupled to auxiliary heaters 140. In one example, each heater connector 202 is coupled to a corresponding auxiliary heater 140, such that there is a one-to-one correspondence between auxiliary heaters 140 and each connector 204. In this way, individual control of each auxiliary heater 140 can be provided on the corresponding connector 204. That is, one connector 204 provides power and control to one auxiliary heater 140. In another example, each micro-area connector 201 can handle a plurality of heater connections. For example, in a substrate support assembly 126 having 150 heaters, three equally spaced micro-area connectors 201 may be present, each micro-area connector 201 coupled to 50 heaters. Turning temporarily to Figure 3, Figure 3 depicts a schematic bottom view of an ESC 174 illustrating the connection scheme of the micro-area connector 201. The bottom surface 133 of the ESC 174 may have a plurality of heater interfaces 310 disposed along the periphery 372 of the bottom surface 133 of the ESC 174. A main heater interface 340 for controlling and powering the main resistive heater 188 may be located at the center 399 of the ESC 174. Connectors 204 may be grouped at the heater interfaces 310 on the bottom surface 133 of the ESC 174. Each heater interface 310 may be used as a connection to provide power to the auxiliary heaters 140. In one example, each heater interface 310 has approximately 10 to 50 connectors 204 that respectively control approximately 10 to approximately 50 auxiliary heaters 140. In one example, the ESC 174 has 150 auxiliary heaters 140 grouped to three heater interfaces 310. For example, a first heater connection 301 operates a first group of 50 auxiliary heaters 140, a second heater connection 302 operates a second group of 50 auxiliary heaters 140, and a third heater connection 303 operates a third group of 50 auxiliary heaters 140. The first heater connection 301, second heater connection 302, and third heater connection 303 allow for individual control of up to 150 auxiliary heaters 140. Each heater interface 310 has several heater connectors 202 corresponding to the respective auxiliary heater 140. In one example, each heater interface 310 has 50 individual heater connectors 202 supplying power to the separate auxiliary heaters 140. However, it should be understood that there may be more or fewer than 150 auxiliary heaters 140, and therefore more or fewer heater interfaces 310 for the auxiliary heaters 140. Returning to Figure 2, connector 204 and heater connector 202 can be of a type that allows electrical connection across connector 204 and heater connector 202. In one example, connector 204 is female and heater connector 202 is male, such as a socket and pin. In another example, connector 204 is male and heater connector 202 is female. Connector 204 mates with heater connector 202 to provide electrical connectivity to auxiliary heater 140. The cooling plate 130 has a bottom surface 294 and a top surface 292. The cooling plate 130 has a plurality of cavities 242 extending from the top surface 292 to the bottom surface 294. The cooling plate 130 has recessed steps 232 formed along the bottom surface 294 of the cooling plate 130 in the cavities 242. The recessed steps 232 extend to a depth 235 in the bottom surface 294. Flange 210 is disposed in a recessed step 232 of cooling plate 130. The height of flange 210 is substantially similar to its depth 235, and flange 210 is sized to fit within recessed step 232 such that the bottom surface of flange 210 is substantially coplanar with the bottom surface 294 of cooling plate 130. Alternatively, flange 210 may extend slightly beyond the bottom surface 294 of cooling plate 130. In yet another alternative, flange 210 may be slightly recessed into the bottom surface 294 of cooling plate 130. Flange 210 is formed of a material with low thermal conductivity. Flange 210 may be formed of insulating materials such as alumina, polyimide, thermoplastics such as polyphenylene sulfide, metal, silicone, or high-temperature polyimide (such as VESPEL). ® and MELDIN ® (or other suitable insulation materials.) Flange 210 may also be formed of electrically insulating material. Flange 210 has one or more sealing leads 220, such as a first lead 222 and a second lead 224, extending through flange 210. Sealing leads 220 may contain 50 or more individual connections. For example, sealing leads 220 may be a bundle of 50 cables bundled together in an insulating sheath such as polyimide insulation. Sealing leads 220 extend through flange 210. Sealing leads 220 extend through flange 210 in such a way that fluids such as liquids or gases cannot pass through flange 210 along sealing leads 220. Sealing leads 220 are configured to prevent fluid transmission through flange 210. Sealing leads 220 are coupled to micro-area connector 201. Sealing leads 220 contain connections extending through micro-area connector 201. For example, sealing leads 220 may contain 50 or more wired connections for controlling auxiliary heater 140. In some examples, the sealing lead 220 is configured to be removably connected to and from the first lead 222 and the second lead 224, such as a pin connector, to aid installation. In other examples, the sealing lead 220 is integrated with the first lead 222 and the second lead 224 to ensure good connectivity. In yet another example, the sealing lead 220 extends through the flange 210 and is configured to be removably connected to the wiring harness 226. In yet another example, the sealing lead 220 extends through the flange 210 and is integrally formed as part of the wiring harness 226. To aid assembly, the first lead 222 and the second lead 224 may be long enough to allow the micro-area connector 201 to connect to the auxiliary heater 140, without the recessed step 232 on the flange 210. Alternatively, the first lead 222 and the second lead 224 may be rigidly attached to both the micro-area connector 201 and the flange 210, such that pushing the flange 210 into the recessed step 232 will push the micro-area connector 201 to establish a connection with the auxiliary heater 140. It should be understood that the function will not change in any arrangement used to assemble the cryogenic microzone connection assembly 200, and other arrangements that facilitate assembly may be equally suitable. Seal 262 is disposed between flange 210 and device plate 145. Seal 262 provides an airtight seal between flange 210 and device plate 145. Therefore, a pressure difference can exist across seal 262. For example, there can be a vacuum pressure on one side of seal 262 and atmospheric pressure on the other side. Facility plate 145 may have one or more channels 245 extending through facility plate 145. Channels 245 are provided to allow cables from other components of electrostatic chuck 174 and substrate support assembly 126 to extend into base plate 176 of substrate support assembly 126. Sealed leads 220 extend into channels 245 and are coupled to wire harness 226. PC board 270 may be coupled to facility board 145. For example, PC board 270 may be coupled to facility board 145 via one or more brackets 271. PC board 270 is disposed within base plate 176. PC board 270 may be a programmable logic controller, or other suitable hardware configured to control the operation and components of ESC 174. In one example, PC board 270 controls auxiliary heater 140. Wiring harness 226 extends to receptacle connection 206 at PC board 270 for electrically coupling PC board 270 to auxiliary heater 140 via micro-area connector 201. The substrate support assembly 126 is provided for processing substrates mounted on the ESC 174 in a vacuum processing environment. However, it should be noted that portions of the substrate support assembly 126 are under atmospheric pressure. For example, the first internal portion 248 is under vacuum pressure, while the second internal portion 244 is under atmospheric pressure. A plurality of gaskets / seals 262, 264, 266 provide the necessary seals to maintain the first internal portion 248 under vacuum when the second internal portion 244 is under atmospheric pressure. Furthermore, the cavity 242 can be fluidly coupled to the first internal portion 248 such that the cavity 242 is under vacuum pressure. For example, the flange 210 is not sealed to the cooling plate 130 in the recessed step 232, such that the vacuum in the first internal portion 248 extends into the cavity 242 between the flange 210 and the ESC 174. Alternatively, the flange 210 can be sealed to the cooling plate 130 using an O-ring, gasket, or other suitable seal. Furthermore, the vacuum processing environment is maintained at a low temperature to process the substrate. For example, the substrate support assembly 126 is operable to process the substrate at temperatures below 0°C and below -10°C, such as temperatures of about -50°C, about -80°C, about -100°C to about -110°C, about -120°C, about -135°C, about -150°C, or about -200°C. Condensation occurs when air cools to its dew point or when water vapor becomes saturated and can no longer hold more water. Whether water condenses depends on the partial pressure and temperature of the water vapor. If the temperature of an object is below its boiling point (or sublimation point) at that pressure, water will condense. As a result, water can condense in a cryogenic vacuum chamber and cause electrical short circuits, corrosion, or other hazards. The cryogenic microzone connection assembly 200 prevents condensation from causing electrical short circuits and other hazards. The flange 210 of the cryogenic microzone connection assembly 200 creates a seal between the cavity 242 and the second internal portion 244 to prevent condensation from forming on the cryogenic microzone connection assembly 200, which provides power and control from the PC plate 270 to the auxiliary heater 140. The cryogenic micro-area connection assembly 200 is designed for use in a cryogenic processing chamber 100 under processing-ready conditions. For example, a first end 291 of the cryogenic micro-area connection assembly 200 is under vacuum pressure, while a second end 293 is under atmospheric pressure. In one example, the connector 204 of the cryogenic micro-area connection assembly 200 can withstand a vacuum environment below that of the socket connection 206 of the cryogenic micro-area connection assembly 200 at a PC board 270 in an atmospheric environment. The cryogenic micro-area connection assembly 200 electrically couples the PC board 270 to the auxiliary heater 140. In some examples, the cryogenic microzone connection assembly 200 may additionally or optionally include one or more heaters 280. For example, a first heater 282 may be disposed on a flange 210 in the space of a second interior portion 244 of the substrate support assembly 126. In another example, a second heater 284 may be disposed on a PC plate 270 facing the flange 210 in the space of a second interior portion 244 of the substrate support assembly 126. The cryogenic microzone connection assembly 200 may use the first heater 282 and / or the second heater 284 to prevent condensation from forming on the cryogenic microzone connection assembly 200, which provides power and control from the PC plate 270 to the auxiliary heater 140. Advantageously, the low-temperature microzone connection assembly 200, with or without the heater 280, prevents the PC board 270 from getting damp. The low-temperature microzone connection assembly 200 reduces moisture on the PC board 270, prevents electrical short circuits on the PC board 270, prevents corrosion of electrical connections on the PC board 270, and extends the life of the PC board 270 between maintenance operations. Although the foregoing description pertains to embodiments of this disclosure, other and further embodiments are conceivable without departing from its basic scope, and the scope of such embodiments is determined by the appended claims. As will be apparent from the foregoing general description and specific embodiments, various modifications may be made without departing from the spirit and scope of this disclosure, although the form of this disclosure has been described and illustrated. As used herein, the term "about" means a difference of + / - 10% from the nominal value. It will be understood that such variations can be included in any value provided herein. A set of upper bounds and a set of lower bounds have been used to describe certain embodiments and features. It should be understood that, unless otherwise stated, the expected range includes any combination of two values, such as any lower bound value combined with any upper bound value, any combination of two lower bound values, and / or any combination of two upper bound values. Certain lower bounds, upper bounds, and ranges appear in one or more of the following claims. 100: Cryogenic processing chamber; 102: Chamber body; 104: Side wall; 108: Cover; 110: Internal processing area; 112: Injection device; 114: Gas panel; 116: Coil; 118: Matching circuit; 120: RF power supply; 122: Heat transfer fluid source; 124: Substrate; 126: Substrate support assembly; 128: Exhaust port; 130: Cooling plate; 132: Pumping system; 133: Bottom surface; 137: Substrate support surface; 140: Auxiliary heater; 142: Controller; 145: Facility plate; 150: Bonding layer; 174: ESC; 175: Dielectric body; 176: Base plate; 186: Electrode; 187: Clamping power supply; 188: Main resistance heater; 189: Heater power supply; 190: Cooling channel; 200: Cryogenic micro-zone connection assembly; 201: Micro-zone connector; 202: Heater connector; 204: Connector; 206: :Socket connection 210: Flange 220: Sealing lead 222: First lead 224: Second lead 226: Wire harness 232: Recessed step 235: Depth 237: Bottom 242: Cavity 244: Second internal part 245: Channel 248: First internal part 252: Indium bonding agent 254: Molybdenum bonding agent 256: Silicone bonding agent 262: Seal 264: Gasket 266: Gasket 270: PC board 271: Bracket 272: First sidewall 276: Second sidewall 280: Heater 282: Heater 284: Heater 291: First end 292: Top surface 293: Second end 294: Bottom surface 301: First heater connection 302: Second heater connection 303: Third heater connection 310: Heater interface 340: Main heater interface 372: Periphery 399: Center To gain a more detailed understanding of the features described above, a more specific description of the briefly summarized disclosure can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be construed as limiting their scope, allowing for other equally effective embodiments. Figure 1 depicts a schematic cross-sectional side view of a processing chamber comprising a substrate support assembly with an electrostatic chuck, according to one or more embodiments described and discussed herein. Figure 2 depicts a schematic cross-sectional side view of a substrate support assembly with a low-temperature micro-area connection component according to one or more embodiments described and discussed herein. Figure 3 depicts a schematic bottom view of an electrostatic chuck for a connection scheme of an illustrative micro-area connector according to one or more embodiments described and discussed herein. To facilitate understanding, the same element symbols have been used where possible to denote common elements in the figures. It is contemplated that elements and features of one or more embodiments can be advantageously combined in other embodiments. 126: Substrate support assembly 130: Cooling plate 137: Surface of substrate support 140: Auxiliary heater 145: Facility board 150: Bonding layer 174:ESC 175: Dielectric body 176: Base plate 186: Electrode 188: Main resistance heater 190: Cooling Channel 200: Low-Temperature Micro-Zone Connection Component 201: Micro-area connector 202: Heater Connector 204: Connector 206: Socket Connection 210: Flange 220: Sealed lead wire 222: First Lead 224: Second lead 226: Wiring Harness 232: Recessed Step 235: Depth 237: Bottom 242: Cavity 244: Second Internal Part 245: Channel 248: First Internal Section 252: Indium binder 254: Molybdenum bonding agent 256: Silicone adhesive 262: Seals 264: Washer 266: Washer 270: PC board 271: Bracket 272: First sidewall 276: Second sidewall 280: Heater 282: Heater 284: Heater 291: First End 292: Top surface 293: Second End 294: Bottom surface

Claims

1. A low-temperature micro-region connection component, comprising: A first end having a micro-area connector; a second end having a socket connection; A flange disposed between the micro-area connector on a first side and the receptacle connection on a second side, wherein one or more heaters are disposed on the flange and / or on a printed circuit board facing the flange; and a wire harness coupled to the micro-area connector, the wire harness extending through the flange and coupled to the receptacle connection, wherein the wire harness extends through the flange in such a manner that a fluid such as a liquid or gas cannot pass through the flange along the wire harness.

2. The cryogenic micro-region connector assembly as described in claim 1, wherein the micro-region connector has about 10 to about 50 connectors.

3. The cryogenic microzone connection assembly as claimed in claim 1, wherein the flange has a heater disposed on the second side of the flange.

4. The cryogenic micro-region connection assembly as described in claim 1, further comprising: One or more sealing leads extend through the flange, wherein the sealing leads seal the flange to prevent fluid from flowing along the sealing leads through the flange.

5. The cryogenic microzone connection assembly as described in claim 4, wherein the sealing leads are configured to be removably connected to and from the flange.

6. A substrate support assembly configured to operate at temperatures below 0°C, the substrate support assembly comprising: An electrostatic chuck having a workpiece support surface opposite a bottom surface; A cooling plate includes: a top surface; a bottom surface; and a cavity extending through the top surface and the bottom surface, wherein the cavity has a recessed step at the bottom surface; a facility plate disposed below the bottom surface of the cooling plate; and a cryogenic microzone connection assembly including: a first end having a microzone connector coupled to the bottom surface of the electrostatic chuck; a flange disposed in the cooling plate and between the microzone connector and the receptacle connection; a second end having a receptacle connection; and a seal forming an airtight seal between the flange and the facility plate.

7. The substrate support assembly as described in claim 6, wherein one side of the seal is configured to be under a vacuum pressure and the other side of the seal is configured to be under an atmospheric pressure.

8. The substrate support assembly as described in claim 7, further comprising: A wire harness, the wire harness including: a sealing lead extending through the flange, wherein the sealing lead is configured to maintain a pressure differential across the flange.

9. The substrate support assembly as claimed in claim 6, wherein the micro-area connector has about 10 to about 50 connectors.

10. The substrate support assembly as claimed in claim 6, wherein the flange is formed of an insulating material.

11. The substrate support assembly as described in claim 8, wherein a heater is disposed below the flange and is under the atmospheric pressure.

12. The substrate support assembly as claimed in claim 7, wherein the cavity is fluidly coupled to a vacuum side of the seal.

13. A cryogenic processing chamber, comprising: A chamber body having sidewalls surrounding an internal processing area, a bottom, and a cover, wherein the internal processing area is configured to be maintained under a vacuum pressure; a substrate support assembly disposed in the internal processing area, the substrate support assembly being configured to operate at a temperature below 0°C, the substrate support assembly including: an electrostatic chuck having a workpiece support surface opposite a bottom surface; a cooling plate including: a top surface; a bottom surface; and a cavity extending through the top surface and the bottom surface, wherein the cavity has a recessed step at the bottom surface; a facility plate disposed below the bottom surface of the cooling plate; and a cryogenic micro-area connection assembly including: a first end having a micro-area connector coupled to the bottom surface of the electrostatic chuck; A flange disposed in the cooling plate and between the cooling plate and the facility plate; and a second end having a socket connection disposed below the flange; and a seal between the flange and the facility plate, the seal being operable to maintain a pressure difference between the first end and the second end of the cryogenic microzone connection assembly.

14. The cryogenic processing chamber as claimed in claim 13, wherein the substrate support assembly further comprises: A sealing lead extends through the flange, wherein the sealing lead is configured to prevent fluid transmission through the flange.

15. The cryogenic processing chamber as described in claim 14, further comprising: A PC board coupled to the facility board, wherein the socket is electrically coupled to the PC board.

16. The cryogenic processing chamber as described in claim 14, wherein the cavity is fluid-coupled to the internal processing region.

17. The cryogenic processing chamber as claimed in claim 16, wherein the cavity extends through the bonding layer and exposes a bottom of the electrostatic chuck, and wherein the micro-area connector is disposed in the cavity.

18. The cryogenic processing chamber as claimed in claim 16, wherein the first end of the cryogenic micro-region connection assembly is under vacuum pressure relative to the second end of the cryogenic micro-region connection assembly.

19. The cryogenic processing chamber as described in claim 14, further comprising: A heater is located below the flange and is in an atmospheric pressure environment.

20. The cryogenic processing chamber as claimed in claim 16, wherein the internal processing area is fluidly coupled to the cavity at an interface between the flange and the recessed step in the cavity.

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