High-frequency component test device and method thereof

Abstract

A high-frequency component testing device includes test keys and a test module. The test keys include a first preamp key and a first postamp key arranged symmetrically, having consistent electrical lengths and characteristic impedances. The test module is used to measure the S-parameters of a direct connection between the first preamp key and the first postamp key, and the S-parameters of a structure under test with a device under test (DUT) inserted between the first preamp key and the first postamp key. The test module calculates the S-parameters in the frequency domain and converts them into an ABCD parameter matrix, then uses matrix root extraction and inverse matrix operations to obtain the ABCD parameters of the de-embedded DUT.

Description

Technical Field

[0001] This invention relates to a testing apparatus, and more particularly to a high-frequency component testing apparatus and testing method thereof. Prior Technology

[0002] Traditional high-frequency component measurement and calibration methods mainly rely on SOLT and TRL. SOLT requires four calibration kits: Short, Open, Load, and Thru. TRL, on the other hand, requires three test keys: Thru, Reflect, and Line. Furthermore, these calibration techniques are often divided into different calibration methods based on specific measurement requirements (such as broadband frequency or on-wafer probing), making the calibration process quite cumbersome.

[0003] In addition, calibration methods based on SOLT and TRL are prone to errors due to each measurement. For example, different needle depths or needle position deviations will affect the calibration results. In order to avoid inaccurate measurement of the test object due to calibration errors, it is necessary to propose improvement methods. Summary of the Invention

[0004] This invention relates to a high-frequency component testing device and method, which reduces calibration errors.

[0005] According to one aspect of the present invention, a high-frequency component testing device is provided, comprising test keys and a test module. The test keys include a first preamp key and a first postamp key arranged symmetrically, having consistent electrical lengths and characteristic impedances. The test module is used to measure the S-parameters of a direct connection between the first preamp key and the first postamp key, and the S-parameters of a structure in which a device under test (DUT) is inserted between the first preamp key and the first postamp key. The test module calculates the S-parameters in the frequency domain and converts them into an ABCD parameter matrix, then obtains the ABCD parameters of the de-embedded DUT through matrix root extraction and inverse matrix operations.

[0006] According to one aspect of the present invention, a high-frequency component testing method is provided, comprising the following steps: Providing a first test key, a second test key, and a third test key; the first test key includes a first preamp key and a first postamp key directly connected; the second test key includes a second preamp key, a first line segment, and a second postamp key directly connected, the first line segment being electrically connected between the second preamp key and the second postamp key; the third test key includes a third preamp key, a second line segment, and a third postamp key directly connected, the second line segment being electrically connected between the third preamp key and the third postamp key, wherein the length of the second line segment is twice the length of the first line segment. Measuring the S-parameters of the direct connection between the first preamp key and the first postamp key, the S-parameters of the direct connection between the second preamp key, the first line segment, and the second postamp key, and the S-parameters of the direct connection between the third preamp key, the second line segment, and the third postamp key. Measuring the S-parameters of a structure under test with a test object inserted between the first preamp key and the first postamp key, and converting the S-parameters of the structure under test into an ABCD parameter matrix. The S-parameters of the first test key are converted into ABCD parameter matrices, and then the ABCD parameter matrices of the first pre-key and the second post-key are obtained by square root operation. The S-parameters of the second test key and the third test key are converted into ABCD parameter matrices, and it is verified whether the ABCD parameter matrix of the second segment in the third test key is equal to the product of the ABCD parameter matrices of the first segment in the two second test keys. The ABCD parameters of the de-embedding test object are calculated based on the inverse matrices of the ABCD parameter matrices of the first pre-key and the first post-key.

[0007] To provide a better understanding of the above and other aspects of the present invention, specific embodiments are described below in conjunction with the accompanying drawings: Simple Explanation of the Diagram

[0008] Figures 1 and 2 respectively illustrate schematic diagrams of a high-frequency component testing apparatus according to an embodiment of the present invention; Figure 3 illustrates a flowchart of a high-frequency component testing method according to an embodiment of the present invention; and Figures 4A to 4D respectively illustrate schematic diagrams of the characteristic verification of a high-frequency component testing device according to an embodiment of the present invention. Figures 5 and 6 respectively illustrate schematic diagrams of a high-frequency component testing apparatus according to another embodiment of the present invention. Figures 7 and 8 respectively illustrate the second and third test keys used in the high-frequency component testing device. Figure 9 illustrates a flowchart of a high-frequency component testing method according to an embodiment of the present invention. Implementation

[0009] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a full understanding of the embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, apparatuses, steps, etc., can be employed. In other cases, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0010] In this embodiment, scattering parameters (S-parameters) are used to represent the high-frequency performance of components such as radio frequency transmitters and microwave devices. Current S-parameter testing devices generate significant parasitic effects, making it impossible for the S-parameters directly obtained from testing high-frequency components to accurately represent their performance. Therefore, in this embodiment, the testing device is equipped with a test key to define the de-embedding plane 101 of the high-frequency component, that is, to define the plane between the intrinsic element (the device under test 102) and the parasitic element (the testing device 100), as shown in Figure 2. By removing the parasitic effects introduced by the testing device in high-frequency operating conditions, accurate intrinsic transmission parameters are obtained.

[0011] Please refer to Figures 1 and 2, which respectively illustrate schematic diagrams of a high-frequency component testing apparatus 100 according to an embodiment of the present invention. In Figure 1, the high-frequency component testing apparatus 100 includes a test key 105 and a test module 130. The test key 105 includes a symmetrical preamp key 110 and a postamp key 120, which have the same electrical length and characteristic impedance. In one embodiment, the characteristic impedance of the preamp key 110 and the postamp key 120 is, for example, 50 ohms, but is not limited thereto. The preamp key 110 and the postamp key 120 are configured, for example, as ground-signal-ground (GSG). In another embodiment, the preamp key 110 and the postamp key 120 are configured, for example, as ground-signal-ground (GS), ground-signal-ground-signal-ground (GSGSG), or other suitable test configurations. The test module 130 is, for example, a network analyzer.

[0012] The pre-stage key 110 includes a first transmission line 112, and the post-stage key 120 includes a second transmission line 122. The first transmission line 112 and the second transmission line 122 have the same electrical length and material, making the transmission parameters on both sides approximately equal. In Figure 2, the device under test (DUT) 102 is connected between the two transmission lines 112 and 122. An embedding plane 101 (perpendicular to the paper) is formed between the DUT 102 and both the first and second transmission lines 112 and 122, respectively, connecting the DUT 102 between the two embedding planes 101. Both the left and right structures of the embedding planes 101 have intrinsic transmission parameters. The intrinsic transmission parameters of the DUT 102 are derived from these intrinsic transmission parameters and the transmission parameters of the structure under test. In one embodiment, the intrinsic transmission parameters are represented, for example, by ABCD parameters.

[0013] In this embodiment, the S-parameters are converted into ABCD parameters through a parameter conversion module. When the preceding key 110 and the following key 120 are directly connected, the S-parameters can be represented by ABCD parameters, using a parameter matrix. This is represented as follows. For example, when the preamplifier key 110 and the emulator key 120 are directly connected, the total voltage V1 and total current I1 are input at one end of the two-port network, and the total voltage V2 and total current I2 are output at the other end of the two-port network, where V1 = AV2 + BI2, I1 = CV2 + DI2, as shown in the formula. The symbols A, B, C, and D represent the relationship between input voltage V1, output voltage V2, input current I1, and output current I2.

[0014] In this embodiment, the test module 130 can obtain the ABCD parameters of the pre-stage key 110 and the post-stage key 120 by taking the square root of the ABCD parameter matrix. The calculation formula (1) is as follows: [Dem] = [PAD][PAD], where [PAD] is the ABCD parameter matrix of the pre-stage key 110 and the post-stage key 120, and [Dem] is the ABCD parameter matrix when the pre-stage key 110 and the post-stage key 120 are directly connected. Since the pre-stage key 110 and the post-stage key 120 in this embodiment have the same electrical length and characteristic impedance, and the ABCD parameter matrices of the pre-stage key 110 and the post-stage key 120 are the same, as long as the square root operation is performed on the ABCD parameter matrix [Dem] when the two test keys 110 and 120 are directly connected, the ABCD parameter matrix [PAD] of the pre-stage key 110 and the post-stage key 120 can be obtained. From formula (1), it can be seen that: .

[0015] Additionally, please refer to Figure 2. When a test object 102 is added between the pre-bond 110 and the post-bond 120, the test module 130 measures the S-parameters of the structure under test with the test object 102 added between the pre-bond 110 and the post-bond 120. Then, the S-parameters are converted into ABCD parameters, and the ABCD parameters of the de-embedded test object 102 are obtained according to the inverse matrix. The calculation formula (2) is as follows: [DUT]=[PAD][Golden][PAD], where [Golden] is the ABCD parameter matrix of the de-embedded test object 102, and [DUT] is the ABCD parameter matrix when the pre-bond 110 and the post-bond 120 are directly connected to the test object 102. From formula (2), we can know that [Golden]=[PAD]-1[DUT][PAD]-1, where [PAD]-1 is the inverse matrix of the ABCD parameter matrix of the pre-bond 110 and the post-bond 120, that is, .

[0016] In this embodiment, the high-frequency component testing device 100 only needs one set of de-embedding test keys to remove the parasitic effects of the layout and wiring that are added due to measurement, which can accelerate the detection speed of de-embedding and reduce pin insertion error to improve accuracy.

[0017] Please refer to Figures 1 to 3, where Figure 3 illustrates a flowchart of a high-frequency component testing method according to an embodiment of the present invention. First, in step S30, a test key 105 is provided, comprising a symmetrically arranged pre-stage key 110 and a post-stage key 120, with the pre-stage key 110 and post-stage key 120 having consistent electrical lengths and characteristic impedances. In step S32, the S-parameters of a direct connection between the pre-stage key 110 and the post-stage key 120, and the S-parameters of a structure in which a device under test 102 is inserted between the pre-stage key 110 and the post-stage key 120, are measured. In step S34, the S-parameters are calculated in the frequency domain and converted into an ABCD parameter matrix, and then the ABCD parameter matrix of the pre-stage key 110 and the post-stage key 120 is obtained by square root operation. In step S36, the ABCD parameters of a de-embedded device under test 102 are calculated based on the inverse matrix of the ABCD parameter matrices of the pre-stage key 110 and the post-stage key 120.

[0018] Please refer to Figures 4A to 4D, which respectively illustrate schematic diagrams of the S-parameter characteristic verification of the high-frequency component testing device 100 according to an embodiment of the present invention. In Figure 4A, the S(1,1) parameter is the input reflection coefficient, which is the input return loss. In Figure 4B, the S(1,2) parameter is the reverse transmission coefficient, which is the isolation. In Figure 4C, the S(2,1) parameter is the forward transmission coefficient, which is the gain. In Figure 4D, the S(2,2) parameter is the output reflection coefficient, which is the output return loss. In this embodiment, the feasibility and characteristic verification of the S-parameters are performed by simulation verification. By comparing the data of the simulated model curve, the DUT model curve, and the de-embedding curve in the figures, it can be found that the de-embedding procedure of this embodiment can obtain results that are very close to the intrinsic transmission parameters of the device under test 102. The simulation verification to 100GHz small signal curve fitting error is less than 10%. In another embodiment, if the transmission key test key is used to verify the characteristic impedance Z0 of the small signal phase and the transmission line length βL to 67GHz, the error can be less than 8%.

[0019] The high-frequency component testing device and method of the present invention described above require only one test key as a calibration module. This test key has a front-end key and a back-end key with consistent electrical length and characteristic impedance. The characteristic impedance is, for example, 50 ohms, consistent with the impedance of the probe, thus avoiding measurement inaccuracies of the device under test due to calibration errors. Compared with traditional high-frequency component measurement and calibration methods that mainly rely on SOLT and TRL, this embodiment can reduce calibration steps and eliminate the parasitic effects brought about by S-parameter testing under high-frequency operating conditions, thereby obtaining accurate S-parameters.

[0020] Please refer to Figures 5 and 6, which respectively illustrate schematic diagrams of a high-frequency component testing device 101 according to another embodiment of the present invention. In Figure 5, the high-frequency component testing device 200 includes a first test key 105 and a test module 130. The first test key 105 includes a symmetrical first preamp key 110 and a first postamp key 120, which have the same electrical length and characteristic impedance. In one embodiment, the characteristic impedance of the first preamp key 110 and the first postamp key 120 is, for example, 50 ohms, but is not limited thereto. The first preamp key 110 and the first postamp key 120 are configured, for example, as ground-signal-ground (GSG). In another embodiment, the first preamp key 110 and the first postamp key 120 are configured, for example, as ground-signal-ground (GS), ground-signal-ground-signal-ground (GSGSG), or other suitable test configurations. The test module 130 is, for example, a network analyzer.

[0021] The first pre-stage key 110 includes a first transmission line 112, and the post-stage key 120 includes a second transmission line 122. The first transmission line 112 and the second transmission line 122 have the same electrical length and material, making the transmission parameters on both sides approximately equal. In Figure 6, the device under test (DUT) 102 is connected between the two transmission lines 112 and 122. An embedding plane 101 (perpendicular to the paper) is formed between the DUT 102 and both the first and second transmission lines 112, connecting the DUT 102 between the two embedding planes 101. Both the left and right structures of the embedding planes 101 have intrinsic transmission parameters. These intrinsic transmission parameters, along with the transmission parameters of the structure under test, are used to deduce the intrinsic transmission parameters of the DUT 102. In one embodiment, the intrinsic transmission parameters are represented, for example, by ABCD parameters.

[0022] In this embodiment, the S-parameters are converted into ABCD parameters through a parameter conversion module. When the first pre-stage key 110 and the first post-stage key 120 are directly connected, the S-parameters can be represented by ABCD parameters, using a parameter matrix. For example, when the first pre-stage key 110 and the first post-stage key 120 are directly connected, the total voltage V1 and total current I1 are input at one end of the two-port network, and the total voltage V2 and total current I2 are output at the other end of the two-port network, where V1 = AV2 + BI2, I1 = CV2 + DI2, as shown in the formula. The symbols A, B, C, and D represent the relationship between input voltage V1, output voltage V2, input current I1, and output current I2.

[0023] In this embodiment, the test module 130 can obtain the ABCD parameters of the first pre-stage key 110 and the first post-stage key 120 by performing a square root operation on the ABCD parameter matrix. The calculation formula (1) is as follows: [Dem1] = [PAD][PAD], where [PAD] is the ABCD parameter matrix of the first pre-stage key 110 and the first post-stage key 120, and [Dem1] is the ABCD parameter matrix when the first pre-stage key 110 and the first post-stage key 120 are directly connected. Since the first pre-stage key 110 and the first post-stage key 120 in this embodiment have the same electrical length and characteristic impedance, and the ABCD parameter matrices of the first pre-stage key 110 and the first post-stage key 120 are the same, as long as the square root operation is performed on the ABCD parameter matrix [Dem1] when the two test keys 110 and 120 are directly connected, the ABCD parameter matrix [PAD] of the first pre-stage key 110 and the first post-stage key 120 can be obtained. From formula (1), it can be seen that: .

[0024] Additionally, please refer to Figure 6. When a test object 102 is added between the first pre-stage key 110 and the first post-stage key 120, the test module 130 measures the S-parameters of the structure under test between the first pre-stage key 110 and the first post-stage key 120, and then converts the S-parameters into ABCD parameters. Based on the inverse matrix, the ABCD parameters of the de-embedded test object 102 are obtained. The calculation formula (2) is as follows: [DUT]=[PAD][Golden][PAD], where [Golden] is the ABCD parameter matrix of the de-embedded test object 102, and [DUT] is the ABCD parameter matrix when the first pre-stage key 110, the test object 102, and the first post-stage key 120 are directly connected. From formula (2), we can know that [Golden] = [PAD]⁻¹[DUT][PAD]⁻¹, where [PAD]⁻¹ is the inverse matrix of the ABCD parameter matrices of the preceding key 110 and the following key 120, i.e. .

[0025] In this embodiment, the high-frequency component testing device 101 uses the first test key 105 of the de-embedding test method to remove the parasitic effects of the layout and wiring added due to measurement, which can accelerate the de-embedding detection speed and reduce pin insertion error to improve accuracy. In addition, the high-frequency component testing device 101 also verifies whether the inverse matrix of the ABCD parameter matrix of the first pre-stage key 110 and the first post-stage key 120 is correct by measuring the ABCD parameter matrix of the second test key 205 and the third test key 305, so as to correctly obtain the ABCD parameters of the test object 102 to be de-embedded.

[0026] Please refer to Figures 7 and 8, which respectively illustrate schematic diagrams of the second test key 205 and the third test key 305 used in the high-frequency component testing device 101. The second test key 205 includes a symmetrical second preamp key 210, a first line segment 212, and a second postamp key 220. The second preamp key 210 and the second postamp key 220 have the same electrical length and characteristic impedance (e.g., 50 ohms). The second preamp key 210 and the second postamp key 220 are configured, for example, in a GSG, GSGSG, or other suitable test configuration. Furthermore, the third test key 305 includes a symmetrical third postamp key 310, a second line segment 312, and a third postamp key 320. The third postamp key 310 and the third postamp key 320 have the same electrical length and characteristic impedance (e.g., 50 ohms). The third postamp key 310 and the third postamp key 320 are configured, for example, in a GSG, GSGSG, or other suitable test configuration.

[0027] In one embodiment, the first test key 105, the second test key 205, and the third test key 305 are, for example, coplanar waveguides (CPWs), and the transmission lines at the intermediate connections have the same characteristic impedance (e.g., 50 ohms). Furthermore, the length of the second segment 312 is, for example, twice the length of the first segment 212, i.e., L2 = 2L1. In one embodiment, the second segment 312 may be formed by connecting two first segments 212 or by consisting of a single segment.

[0028] Please refer to Figures 5 to 9, where Figure 9 illustrates a flowchart of a high-frequency component testing method according to an embodiment of the present invention. First, in step S91, a first test key 105, a second test key 205, and a third test key 305 are provided. The first test key 105 includes a first preamp key 110 and a first postamp key 120 that are directly connected. The second test key 205 includes a second preamp key 210, a first line segment 212, and a second postamp key 220 that are directly connected. The first line segment 212 is electrically connected between the second preamp key 210 and the second postamp key 220. The third test key 305 includes a third preamp key 310, a second line segment 312, and a third postamp key 320 that are directly connected. The second line segment 312 is electrically connected between the third preamp key 310 and the third postamp key 320, wherein the length L2 of the second line segment 312 is twice the length L1 of the first line segment 212. In step S92, the S-parameters of the direct connection between the first pre-stage key 110 and the first post-stage key 120 are measured; the S-parameters of the direct connection between the second pre-stage key 210, the first line segment 212, and the second post-stage key 220 are measured; and the S-parameters of the direct connection between the third pre-stage key 310, the second line segment 312, and the third post-stage key 320 are measured. In step S92, the S-parameters of a test structure with a test object 102 added between the first pre-stage key 110 and the first post-stage key 120 are measured, and the S-parameters of the test structure are converted into an ABCD parameter matrix. In step S93, the S-parameters are calculated in the frequency domain, and the S-parameters of the first test key 105 are converted into an ABCD parameter matrix. Then, the ABCD parameter matrix of the first pre-stage key 110 and the second post-stage key 120 is obtained by square root operation. As mentioned above, it can be seen from formula (1) that: In step S94, the S-parameters of the second test key 205 are converted into an ABCD parameter matrix, and the S-parameters of the third test key 305 are converted into an ABCD parameter matrix. It is then verified whether the ABCD parameter matrix of the second line segment 312 in the third test key 305 is equal to the product of the ABCD parameter matrices of the first line segment 212 in the two second test keys 205. In step S95, the ABCD parameters of the de-embedded test object 102 are calculated based on the inverse matrix of the ABCD parameter matrices of the first pre-key 110 and the first post-key 120.

[0029] In step S94, [PAD] is the ABCD parameter matrix of the second pre-key 210 and the second post-key 220, [Line1] is the ABCD parameter matrix of the first line segment 212, and [Dem2] is the ABCD parameter matrix when the second pre-key 210, the first line segment 212, and the second post-key 220 are directly connected. The calculation formula (3) is as follows: [Dem2] = [PAD][Line1][PAD]. From formula (3), we can know that [Line1] = [PAD] -1[Dem2][PAD] -1, where [PAD] -1 is the inverse matrix of the ABCD parameter matrix of the second pre-key 210 and the second post-key 220.

[0030] Furthermore, in step S94, [PAD] is the ABCD parameter matrix of the third pre-key 310 and the third post-key 320, [Line2] is the ABCD parameter matrix of the second line segment 312, and [Dem3] is the ABCD parameter matrix when the third pre-key 310, the second line segment 312, and the third post-key 320 are directly connected. The calculation formula (4) is as follows: [Dem3] = [PAD][Line2][PAD]. From formula (4), we can know that [Line2] = [PAD] -1[Dem3][PAD] -1, where [PAD] -1 is the inverse matrix of the ABCD parameter matrix of the third post-key 310 and the third post-key 320.

[0031] In step S94, when the test module verifies that the ABCD parameter matrix of the second line segment 312 in the third test key 305 is equal to the product of the ABCD parameter matrices of the two first line segments 212, i.e., [Line2] = [Line1] [Line1] holds true, it indicates that the inverse matrix [PAD]-1 of the ABCD parameter matrices of the first pre-key 110 and the first post-key 120 is correct. Conversely, when [Line2] = [Line1] [Line1] does not hold true, it indicates that the inverse matrix [PAD]-1 of the ABCD parameter matrices of the first pre-key 110 and the first post-key 120 is incorrect, and therefore the ABCD parameter matrix of the de-embedding test object 102 cannot be correctly calculated.

[0032] In step S95, [Golden] is the ABCD parameter matrix of the de-embedding test object 102, while [DUT] is the ABCD parameter matrix when the first pre-bond 110, the test object 102, and the first post-bond 120 are directly connected. The calculation formula (2) is as follows: [DUT] = [PAD][Golden][PAD]. From formula (2), we can know that [Golden] = [PAD]⁻¹[DUT][PAD]⁻¹, where [PAD]⁻¹ is the inverse matrix of the ABCD parameter matrices of the first pre-bond 110 and the first post-bond 120, i.e. When the inverse matrix [PAD]-1 of the ABCD parameter matrix of the first pre-bond 110 and the first post-bond 120 is verified to be correct, the ABCD parameter matrix of the de-embedding test object 102 can be calculated correctly.

[0033] The high-frequency component testing apparatus 101 in this embodiment, through the verification method described above, can avoid measurement inaccuracies of the test object due to calibration errors. For example, under broadband operation, errors caused by different needle depths or needle position offsets can affect the measurement results of the de-embedded test object.

[0034] In summary, although the present invention has been disclosed above with reference to embodiments, it is not intended to limit the invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

[0035] 100,101: High-frequency component testing device 101: De-embedded plane 102: Test Item 105: Test Key 110: Preamp key, first preamp key 120: Back key, first back key 112: First transmission line 122: Second transmission line 130: Test Module 205: Second test key 210: Second preamp key 212: First line segment 220: Second post-key 305: Third Test Key 310: Third post-key 312: Second line segment 320: Third post-key L1, L2: Length

Claims

1. A high-frequency component testing device, comprising: A first test key includes a symmetrically arranged first preamp key and a first postamp key, the first preamp key and the first postamp key having the same electrical length and characteristic impedance; a second test key includes a directly connected second preamp key, a first line segment and a second postamp key, the first line segment being electrically connected between the second preamp key and the second postamp key; and a test module for measuring the S-parameters of the directly connected first preamp key and the first postamp key, and the S-parameters of a structure under test with a device under test (DUT) inserted between the first preamp key and the second postamp key. The test module calculates the S-parameters in the frequency domain and converts them into an ABCD parameter matrix, then obtains the ABCD parameters of the DUT after de-embedding using matrix square root operation and inverse matrix operation.

2. The testing apparatus as described in claim 1 further includes a third test key comprising a third pre-stage key, a second line segment, and a third post-stage key that are directly connected, wherein the second line segment is electrically connected between the third pre-stage key and the third post-stage key, and wherein the length of the second line segment is equal to twice the length of the first line segment.

3. The test apparatus as described in claim 2, wherein [PAD] is the ABCD parameter matrix of the first pre-stage key and the first post-stage key, [Dem1] is the ABCD parameter matrix when the first pre-stage key and the first post-stage key are directly connected, and [Dem1] = [PAD][PAD], the ABCD parameter matrix of the first pre-stage key and the first post-stage key.

4. The test apparatus as described in claim 3, wherein [PAD] is the ABCD parameter matrix of the second pre-key and the second post-key, [Line1] is the ABCD parameter matrix of the first line segment, and [Dem2] is the ABCD parameter matrix when the second pre-key, the first line segment and the second post-key are directly connected, wherein [Dem2] = [PAD][Line1][PAD].

5. The test apparatus as described in claim 4, wherein [PAD] is the ABCD parameter matrix of the third pre-key and the third post-key, [Line2] is the ABCD parameter matrix of the second line segment, and [Dem3] is the ABCD parameter matrix when the third pre-key, the second line segment and the third post-key are directly connected, wherein [Dem3] = [PAD][Line2][PAD].

6. The test apparatus as described in claim 5, wherein the test module verifies that the ABCD parameter matrix [Line2] of the second line segment in the third test key is equal to the product of the ABCD parameter matrices [Line1] of the first line segment in the two second test keys, expressed as [Line2]=[Line1][Line1].

7. The test apparatus as described in claim 6, wherein [Golden] is the ABCD parameter matrix of the de-embedded test object, and [DUT] is the ABCD parameter matrix of the first pre-key, the test object and the first post-key in direct connection, [DUT] = [PAD][Golden][PAD], and the ABCD parameter matrix of the de-embedded test object [Golden] = [PAD]-1[DUT][PAD]-1 is calculated based on the inverse matrix [PAD]-1 of the ABCD parameter matrices of the pre-key and the post-key.

8. A method for testing high-frequency components, comprising: A first test key, a second test key, and a third test key are provided. The first test key includes a first preamp key and a first postamp key that are directly connected. The second test key includes a second preamp key, a first line segment, and a second postamp key that are directly connected. The first line segment is electrically connected between the second preamp key and the second postamp key. The third test key includes a third preamp key, a second line segment, and a third postamp key that are directly connected. The second line segment is electrically connected between the third preamp key and the third postamp key, wherein the length of the second line segment is twice the length of the first line segment. The S-parameters of the direct connection between the first preamp key and the first postamp key, the S-parameters of the direct connection between the second preamp key, the first line segment, and the second postamp key, the S-parameters of the direct connection between the third preamp key, the second line segment, and the third postamp key, and the S-parameters of a test structure with a test object inserted between the first preamp key and the first postamp key are measured. The S-parameters are calculated in the frequency domain and converted into ABCD parameter matrices. Then, the ABCD parameter matrices of the first pre-key and the second post-key are obtained by square root operation. It is verified whether the ABCD parameter matrix of the second segment in the third test key is equal to the product of the ABCD parameter matrices of the first segment in the two second test keys. The ABCD parameters of the de-embedded test object are calculated based on the inverse matrix of the ABCD parameter matrices of the first pre-key and the first post-key.

9. The test method as described in claim 8, wherein the first test key, the second test key and the third test key have the same characteristic impedance.

10. The test method as described in Request 8, wherein [PAD] is the ABCD parameter matrix of the first pre-key and the first post-key, [Dem1] is the ABCD parameter matrix when the first pre-key and the first post-key are directly connected, and [Dem1] = [PAD][PAD], the ABCD parameter matrix of the first pre-key and the first post-key.

11. The test method as described in claim 10, wherein [PAD] is the ABCD parameter matrix of the second pre-key and the second post-key, [Line1] is the ABCD parameter matrix of the first line segment, and [Dem2] is the ABCD parameter matrix when the second pre-key, the first line segment and the second post-key are directly connected, wherein [Dem2] = [PAD][Line1][PAD].

12. The test method as described in claim 11, wherein [PAD] is the ABCD parameter matrix of the third pre-key and the third post-key, [Line2] is the ABCD parameter matrix of the second line segment, and [Dem3] is the ABCD parameter matrix when the third pre-key, the second line segment and the third post-key are directly connected, wherein [Dem3] = [PAD][Line2][PAD].

13. The test method as described in claim 12, wherein verifying that the ABCD parameter matrix [Line2] of the second line segment in the third test key is equal to the product of the ABCD parameter matrices [Line1] of the first line segment in the two second test keys is expressed as [Line2]=[Line1][Line1].

14. The test method as described in claim 13, wherein [Golden] is the ABCD parameter matrix of the de-embedded test object, and [DUT] is the ABCD parameter matrix when the first pre-key, the test object, and the first post-key are directly connected, [DUT] = [PAD][Golden][PAD], and the ABCD parameter matrix of the de-embedded test object [Golden] = [PAD]-1[DUT][PAD]-1 is calculated based on the inverse matrix [PAD]-1 of the ABCD parameter matrices of the pre-key and the post-key.

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