Heat dissipation materials for semiconductors

Abstract

This disclosure provides a heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one conductive wire, and a base, and the bare die is disposed on the base. The heat dissipation material includes a high-resistivity polymer material and a high-resistivity thermally conductive material. The high-resistivity polymer material has a first thermal conductivity and a first impedance value. The high-resistivity thermally conductive material is mixed with the high-resistivity polymer material, wherein the heat dissipation material has a second thermal conductivity and a second impedance value, and is disposed between the housing and the base, wherein the second thermal conductivity is more than twice the first thermal conductivity.

Claims

1. A heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one conductive wire, and a heat dissipation base having at least one pin, wherein the bare die is soldered to the heat dissipation base and is correspondingly electrically connected to the at least one pin via the at least one conductive wire, the heat dissipation material comprising: a silicone gel having a first thermal conductivity and a first impedance value; and diamond powder mixed with the silicone gel to form the heat dissipation material, wherein the heat dissipation material has a second thermal conductivity, a second impedance value, and a plurality of particle size parameters, is disposed between the housing and the heat dissipation base, and fills the space between the two to cover the bare die, the at least one conductive wire, and an inner surface of the heat dissipation base, the heat dissipation base having a third thermal conductivity, the second thermal conductivity being several times that of the third thermal conductivity, the third thermal conductivity being tens of times that of the first thermal conductivity, the second impedance value being greater than or equal to the first impedance value, and the plurality of particle size parameters being 0.01µm to 2mm.

2. The heat dissipation material as described in claim 1, wherein: The semiconductor is a single-chip wafer; the housing is an epoxy resin shell; the heat sink is a copper base; the first impedance value is 7*10E13 Ohm-cm, and the second impedance value is 10E13-10E16 Ohm-cm; the first thermal conductivity is 6.5W / m*K, the second thermal conductivity is 2000W / m*K, and the third thermal conductivity is 400W / m*K; the diamond powder is derived from an abrasive, and the diamond powder can be replaced by silicon carbide microparticles having a fourth impedance value and a fourth thermal conductivity, or the diamond powder and the silicon carbide microparticles are mixed in a specific ratio to form a solute of the heat dissipation material; and the diamond powder comprises diamond powder particles of the same or different sizes.

3. The heat dissipation material as described in claim 1, wherein: The silicone has fluidity and impedance, and serves as a binder for the heat dissipation material. The diamond powder has impedance and thermal conductivity, and the heat dissipation material has fluidity, impedance, and thermal conductivity. The heat dissipation material distributes the heat generated by the bare crystal to the at least one conductive wire and the heat dissipation base through its fluidity and thermal conductivity, thereby increasing the heat dissipation area. And the heat dissipation material uses its impedance to ensure insulation between the at least one conductor and between the conductor and the bare die.

4. A heat dissipation material for a semiconductor, wherein the semiconductor includes a housing having a plurality of connection pads, a plurality of bare dies, a plurality of wires, a ceramic active metal layer, a base plate, and a heat dissipation base, the plurality of bare dies being soldered to the ceramic active metal layer by a first thermally conductive plate, the ceramic active metal layer being soldered to the base plate by a second thermally conductive plate, the base plate being disposed on the heat dissipation base by a thermal interface layer, the plurality of bare dies being electrically connected to each other by the plurality of wires, and the plurality of bare dies being coupled to the plurality of connection pads by the first thermally conductive plate, the heat dissipation material comprising: a silicone gel having a first thermal conductivity and a first impedance value; A diamond powder is mixed with silicone to form a heat dissipation material. The heat dissipation material has a second thermal conductivity, a second impedance value, and a plurality of particle size parameters. It is disposed between the housing and the base plate and fills the space between them to cover the plurality of bare crystals, the plurality of wires, the first heat-conducting plate, the ceramic active metal layer, the second heat-conducting plate, and an inner surface of the base plate. The heat dissipation base has a third thermal conductivity. The second thermal conductivity is several times that of the third thermal conductivity, and the third thermal conductivity is tens of times that of the first thermal conductivity. The second impedance value is greater than or equal to the first impedance value, and the plurality of particle size parameters are 0.01um to 2mm.

5. The heat dissipation material as described in claim 4, wherein: The semiconductor is a power chip module; the housing is an epoxy resin shell; the first heat-conducting plate, the second heat-conducting plate, the base plate, and the heat dissipation base can be selected from a group consisting of a substrate with a copper track, a direct bonded copper (DBC) substrate, a direct plated copper (DPC) substrate, and an active metal brazing (AMB) substrate; the first impedance value is 7*10E13 Ohm-cm, and the second impedance value is 10E13-10E16 Ohm-cm; the first thermal conductivity is 6.5W / m*K, the second thermal conductivity is 2000W / m*K, and the third thermal conductivity is 400W / m*K; The diamond powder comes from an abrasive, and the diamond powder can be replaced by silicon carbide microparticles having a fourth impedance value and a fourth thermal conductivity, or the diamond powder and the silicon carbide microparticles are mixed in a specific ratio to form a component of the heat dissipation material; and the diamond powder contains diamond powder particles of the same or different sizes.

6. The heat dissipation material as described in claim 5, wherein: The silicone has fluidity and impedance, and serves as a binder for the heat dissipation material. The diamond powder has impedance and thermal conductivity, and the heat dissipation material has fluidity, impedance, and thermal conductivity. The heat dissipation material distributes the heat generated by the bare crystal to the at least one conductive wire and the heat dissipation base through its fluidity and thermal conductivity, thereby increasing the heat dissipation area. And the heat dissipation material uses its impedance to ensure insulation between the at least one conductor and between the conductor and the bare die.

7. A heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one conductive wire, and a base, and the bare die is disposed on the base, the heat dissipation material comprising: a first impedance polymer material having a first thermal conductivity and a first impedance value; and a second impedance thermally conductive material mixed with the first impedance polymer material, wherein the heat dissipation material has a second thermal conductivity and a second impedance value, and is disposed between the housing and the base, and the second thermal conductivity is more than twice the first thermal conductivity.

8. The heat dissipation material as described in claim 7, wherein: The base is a heat dissipation base; the heat dissipation material fills the space between the housing and the base to cover the bare die, the at least one conductive wire, and the base. The heat dissipation base has a third thermal conductivity, which is between the second thermal conductivity and the first thermal conductivity. The second thermal conductivity is 1 to 6 times the third thermal conductivity, which is tens of times the first thermal conductivity, and the second impedance value is greater than or equal to the first impedance value. The base is a heat dissipation base with at least one pin. The bare die is electrically connected to the at least one pin via the at least one conductive wire. The first impedance polymer material is a silicone gel. The second impedance thermal conductive material is at least one of diamond powder and silicon carbide powder. The heat dissipation material also has a plurality of particle size parameters, wherein the plurality of particle size parameters are 0.01um to 2mm. The base can be selected from a substrate with a copper track, a direct bonded copper (DBC) substrate, or a direct bonded copper substrate. The semiconductor is a group consisting of a copper substrate, a direct plated copper (DPC) substrate, and an active metal brazing (AMB) substrate; the semiconductor is a single-chip or a power chip module; the housing is an epoxy resin shell; the first impedance is 7*10E13 Ohm-cm, and the second impedance is 10E13-10E16 Ohm-cm; the first thermal conductivity is 6.5W / m*K, the second thermal conductivity is 2000W / m*K, and the third thermal conductivity is 400W / m*K; the diamond powder or the silicon carbide powder is derived from an abrasive; the diamond powder and the silicon carbide particles are mixed in a specific ratio to form a solute of the heat dissipation material; the diamond powder comprises diamond powder particles of the same or different sizes; and the silicon carbide powder comprises silicon carbide powder particles of the same or different sizes.

9. The heat dissipation material as described in claim 8, wherein: The silicone has a fluidity and a resistivity, and serves as a binder for the heat dissipation material. The diamond powder and the silicon carbide powder have the resistivity and a thermal conductivity. The heat dissipation material has the fluidity, the resistivity, and the thermal conductivity. The heat dissipation material distributes the heat generated by the bare crystal to the at least one conductive wire and the heat dissipation base through the fluidity and the thermal conductivity, thereby increasing the heat dissipation area. And the heat dissipation material uses its impedance to ensure insulation between the at least one conductor and between the conductor and the bare die.

10. A heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one conductive wire, and a base, and the bare die is disposed on the base, wherein the base has a third thermal conductivity, the heat dissipation material comprising: a first impedance polymer material having a first thermal conductivity; and a second impedance thermally conductive material mixed with the first impedance polymer material, wherein the heat dissipation material has a second thermal conductivity and is disposed between the housing and the base, and the second thermal conductivity is greater than the third thermal conductivity.

Images