Transistor and manufacturing method thereof

Abstract

This invention provides a transistor and its manufacturing method, comprising a substrate, an epitaxial layer, an oxide composite layer, and a metal layer. The epitaxial layer is disposed on the substrate, and the oxide composite layer is disposed on the epitaxial layer, with a bottom oxide layer and a top oxide layer sequentially arranged thereon. The side edge of the bottom oxide layer has a triangular structure, and the side edge of the top oxide layer has an inclined structure, with the angle between the inclined structure and a horizontal plane being less than 90°, ensuring that the metal layer completely covers the oxide composite layer without any gaps.

Claims

1. A transistor, comprising: a substrate; an epitaxial layer disposed on the substrate; an oxide composite layer disposed on the epitaxial layer, having an oxide underlayer and an oxide toplayer sequentially thereon; and a metal layer covering the oxide composite layer, wherein, The oxide underlayer has a triangular structure on its side edge, and the oxide upper layer has an inclined structure on its side edge. The angle between the inclined structure and a horizontal plane is less than 90°. The triangular structure and the horizontal plane have a first inclined angle of 40° to 60°. The inclined structure and the horizontal plane have a second inclined angle of 15° to 75°, so that the metal layer completely covers the oxide composite layer without gaps.

2. The transistor as claimed in claim 1, wherein the oxide composite layer has a thickness of not more than 20,000 angstroms (Å), and the thickness ratio of the oxide underlayer to the oxide overlayer is 2:

1.

3. The transistor as claimed in claim 1, wherein the oxide underlayer has a thickness of 3,000 to 6,000 angstroms (Å).

4. The transistor as claimed in claim 1, wherein the material of the metal layer is selected from one or a combination of the group consisting of aluminum (Al), nickel (Ni), titanium (Ti), and gold (Au).

5. The transistor as claimed in claim 1, wherein the transistor system is a bipolar junction transistor (BJT).

6. A method for manufacturing a transistor, comprising: providing an epitaxial layer disposed on a substrate; providing an oxide composite layer disposed on the epitaxial layer, comprising sequentially providing an oxide underlayer and an oxide toplayer; and providing a metal layer covering the oxide composite layer, wherein... The oxide underlayer has a triangular structure on its side edge, and the oxide upper layer has an inclined structure on its side edge. The angle between the inclined structure and a horizontal plane is less than 90°. The triangular structure and the horizontal plane have a first inclined angle of 40° to 60°. The inclined structure and the horizontal plane have a second inclined angle of 15° to 75°, so that the metal layer completely covers the oxide composite layer without gaps.

7. The method of manufacturing a transistor as claimed in claim 6, wherein the oxide composite layer is provided by providing the oxide composite layer having a thickness of not more than 20,000 angstroms (Å), and the thickness ratio of the oxide underlayer to the oxide overlayer is 2:

1.

8. The method of manufacturing a transistor as claimed in claim 6, wherein the oxide substrate is provided by providing the oxide substrate having a thickness of 3000 to 6000 angstroms (Å).

9. A method for manufacturing a transistor as claimed in claim 6, wherein the oxide composite layer system is provided by: providing a high-temperature oxidation process to form the oxide underlayer; providing a low-temperature oxidation process to form the oxide toplayer on the oxide underlayer; providing a heating process to heat-treat the oxide underlayer and the oxide toplayer; and patterning the oxide underlayer and the oxide toplayer such that the side edges of the oxide underlayer form the triangular structure and the side edges of the oxide toplayer form the inclined structure.

10. The method of manufacturing a transistor as claimed in claim 6, wherein the material of the metal layer is selected from one or a combination of aluminum (Al), nickel (Ni), titanium (Ti), and gold (Au).

11. The method of manufacturing a transistor as claimed in claim 6, wherein one of the temperatures of the high-temperature oxidation process is 1000°C to 1200°C.

12. The method of manufacturing a transistor as claimed in claim 6, wherein the temperature of the low-temperature oxidation process is 400°C to 500°C.

13. The method of manufacturing a transistor as claimed in claim 6, wherein one of the heating processes is provided at a temperature of 850°C.

Images