Semiconductor structure, method for forming the same and system for forming the same

Abstract

A metal oxide layer and a method and system for forming a metal oxide layer are provided. One method includes receiving a workpiece in a deposition apparatus, wherein the deposition apparatus includes a chamber and an electrostatic chuck disposed in the chamber to receive the workpiece; injecting oxygen into the chamber through a shutter tube; monitoring electrostatic accumulation on the workpiece; and adjusting the electrostatic accumulation, wherein adjusting the electrostatic accumulation includes adjusting the height of the electrostatic chuck to form a deposition layer with a selected thickness uniformity.

Description

Technical Field

[0001] none Prior Technology

[0002] Semiconductor device manufacturing is the process of forming integrated circuit chips (ICs). The manufacturing process is a multi-step process involving various deposition, lithography, and chemical processing steps to gradually form integrated circuits on a semiconductor wafer. Many integrated circuits are formed simultaneously on the semiconductor wafer, which is then diced to form the IC. Summary of the Invention

[0003] none Simple Explanation of the Diagram

[0004] The various embodiments of this disclosure can be best understood through the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features may be arbitrarily increased or decreased. Furthermore, the accompanying drawings are merely illustrative examples of embodiments of this disclosure and are intended to limit the scope of this disclosure. Figures 1A and 1B illustrate various cross-sectional views of process tools including adjustable wafer chucks in some embodiments; Figures 2A and 2B illustrate various views of an adjustable wafer chuck according to some embodiments; Figure 3 illustrates a cross-sectional view of an adjustable wafer chuck according to some embodiments; Figure 4 illustrates a cross-sectional view of an adjustable wafer chuck according to some other embodiments; Figure 5 illustrates a cross-sectional view of an adjustable wafer chuck according to some other embodiments; Figure 6 illustrates a cross-sectional view of an adjustable wafer chuck according to some other embodiments; Figures 7A and 7B illustrate schematic diagrams of systems configured to operate an adjustable wafer chuck, according to some embodiments; Figure 8 illustrates a top view of an adjustable wafer chuck according to some embodiments; Figure 9 illustrates a top view of an adjustable wafer chuck according to some other embodiments; Figure 10 illustrates a top view of an adjustable wafer chuck according to some other embodiments; Figure 11 illustrates a top view of an adjustable wafer chuck according to some other embodiments; Figure 12 illustrates a cross-sectional view of an adjustable wafer chuck according to some other embodiments; Figure 13 is a schematic diagram of the bottom of the shutter tube according to a specific embodiment of the system of Figure 1A; Figure 14 is a top view and cross-sectional view of an adjustable wafer chuck according to a specific embodiment of the present disclosure; Figure 15 is a schematic diagram of a portion of a semiconductor device formed according to a specific embodiment of the present disclosure; Figure 16 is a schematic diagram of a portion of a semiconductor device according to a specific embodiment of Figure 15; Figure 17 is a schematic diagram of a magnetic-tunnel junction (MTJ) film stack according to a specific embodiment of the present disclosure; and Figure 18 illustrates a flowchart of a method for forming a uniform metal oxide layer according to an embodiment of the present disclosure. Implementation

[0005] The following disclosure provides numerous different embodiments or examples for implementing various features of this disclosure. Specific examples of elements and configurations are described below to simplify this disclosure. Of course, these specific examples are merely illustrative and not intended to be limiting. For example, the formation of a first feature above or on a second feature in the following description may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature may be formed between the first and second features so that the first and second features are not in direct contact. As described herein, "directly above" means the vertical alignment of features such that when the upper feature is directly above the lower feature, the vertical axis passes through the two features. Additionally, reference numerals and / or letters may be repeated in various examples of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed, nor is it intended to limit the relationship between the various embodiments and / or configurations described.

[0006] Furthermore, spatial relative terms, such as "directly above," "above," "overlapping," "upper," "top," "overlapping," "below," "lower," "below," "bottom," "side," "positive slope," and "negative slope," may be configured herein to describe the relationship between one element or feature and another element or feature, in order to facilitate the description of the diagram. Spatial relative terms are intended to cover different orientations of the device in use or operation other than those shown in the diagram. The device may be oriented in other ways (rotated 90 degrees or positioned in other orientations), and therefore the spatial relative descriptive terms used herein may be interpreted accordingly.

[0007] Unless otherwise expressly stated, all figures indicating quantities, material ratios, material physical properties, and / or uses in this specification shall be understood to be modified by the word "about". When numerical values ​​are modified in the specification or the claims, "about" indicates an accuracy range understood and accepted by one of ordinary skill in the art. Generally, the accuracy range is ±10%. Therefore, "about 10" means 9 to 11.

[0008] In some embodiments disclosed herein, a "material layer" is a layer comprising at least 50 wt.% of the identified material, such as a layer comprising at least 60 wt.% of the identified material, a layer comprising at least 75 wt.% of the identified material, a layer comprising at least 90 wt.% of the identified material, or a layer comprising at least 99 wt.% of the identified material; and a layer as "material" includes a layer comprising at least 50 wt.% of the identified material, such as a layer comprising at least 60 wt.% of the identified material, a layer comprising at least 75 wt.% of the identified material, a layer comprising at least 90 wt.% of the identified material, or a layer comprising at least 99 wt.% of the identified material. For example, in some embodiments, each titanium nitride layer is a layer comprising at least 50 wt.% of titanium nitride, a layer comprising at least 60 wt.% of titanium nitride, a layer comprising at least 75 wt.% of titanium nitride, a layer comprising at least 90 wt.% of titanium nitride, or a layer comprising at least 99 wt.% of titanium nitride.

[0009] For the sake of brevity, this document may not describe in detail the well-known technologies associated with semiconductor device manufacturing. Furthermore, the various steps and processes described herein can be incorporated into more comprehensive steps and processes with additional functions not described in detail herein. Specifically, the various processes for manufacturing semiconductor devices are well-known; therefore, for the sake of brevity, this document will only briefly mention many processes, or omit them entirely, without providing well-known process details. Those skilled in the art will readily understand upon fully reading this disclosure that the structures disclosed herein can be used with a variety of technologies and can be incorporated into a variety of semiconductor devices and products. Furthermore, it is worth noting that semiconductor device structures include varying numbers of components, and a single component shown in the diagrams may represent multiple components.

[0010] Integrated circuit chips (ICs) comprise multiple layers (e.g., dielectric layers, conductive layers, etc.) disposed on a substrate. These layers are formed through semiconductor device manufacturing processes. The manufacturing process includes performing various deposition, lithography, and removal processes to form integrated circuits on a semiconductor wafer. Typically, multiple integrated circuits are formed simultaneously on a semiconductor wafer, which is then diced into individual chips to form multiple ICs.

[0011] In the manufacturing process, wafer chucks are typically used to securely hold semiconductor wafers. For example, some deposition processes (such as physical vapor deposition (PVD) and chemical vapor deposition (CVD)) rely on wafer chucks with multiple contact pads to firmly hold the semiconductor wafer in place as a layer is formed on or over it. Multiple contact pads can improve clamping performance (e.g., more uniform clamping force across the wafer, improved cooling effect). However, multiple contact pads are prone to premature wear, which may reduce clamping performance (e.g., uneven clamping force on the wafer, increased backside pressure failure, etc.).

[0012] One potential cause of premature wear of multiple contact pads is semiconductor wafer warpage (e.g., loading a warped semiconductor wafer onto a wafer chuck, or deposition processes causing the semiconductor wafer to be clamped by the wafer chuck). More specifically, a warped semiconductor wafer can lead to premature wear of multiple contact pads because, when clamped in a wafer chuck, the warped semiconductor wafer results in uneven distances between the warped semiconductor wafer and the contact pads (e.g., the curved shape of the warped semiconductor wafer (e.g., concave, convex, etc.) causes some contact pads to be closer to the wafer than others). This variable distance between the multiple contact pads and the semiconductor wafer can cause increased forces on some of the multiple contact pads, thus potentially leading to premature wear of some of them. Premature wear of contact pads increases the cost of manufacturing ICs, for example, by causing decreased productivity (e.g., due to tool downtime), increased maintenance costs (e.g., the cost of repairing contact pads, the cost of replacing wafer chucks, etc.), and so on.

[0013] The various embodiments disclosed herein relate to an adjustable wafer chuck. The adjustable wafer chuck is configured to receive (e.g., clamp) a wafer. The adjustable wafer chuck includes a base and a pad portion. The base includes a plurality of adjustable base structures. The pad portion is disposed on a first side of the base. The pad portion includes a plurality of contact pads (e.g., minimum contact area (MCA) pads) fixed to the plurality of adjustable base structures. Each adjustable base structure is configured to move along a plane in a first direction and is configured to move along a plane in a second direction opposite to the first direction.

[0014] Because the adjustable base structure is configured to move along the plane in the first and second directions, and because the plurality of contact pads are fixed to the plurality of adjustable base structures, the distance between the plurality of contact pads and the wafer can be adjusted (e.g., adjusted according to a feedback signal). Therefore, when the adjustable wafer chuck holds a warped wafer, the distance between the plurality of contact pads and the wafer is likely to be more uniform on the warped wafer compared to a typical wafer chuck (e.g., a non-adjustable wafer chuck). Consequently, the plurality of contact pads of the adjustable wafer chuck are less prone to premature wear. Therefore, the adjustable wafer chuck can reduce the cost of manufacturing integrated circuits (e.g., increase productivity, reduce maintenance costs, etc.).

[0015] In some embodiments disclosed herein, an adjustable wafer chuck is controlled and operated to form a uniform oxide layer on a workpiece (e.g., a wafer). For example, conditions around the wafer and / or the properties of the deposited oxide are monitored, and the adjustable chuck is adjusted based on the monitored conditions and / or properties. For example, the flow characteristics and / or oxygen concentration in the local environment around or around the wafer can be adjusted by raising or lowering the area of ​​the chuck. Therefore, the oxide concentration of the deposited material and / or the thickness of the formed layer can be adjusted.

[0016] In some embodiments, the oxygen entering the deposition chamber and its flow within the chamber are controlled to form a uniform oxide layer on a workpiece (e.g., a wafer). For example, oxygen can be introduced into the chamber through an adjustable shutter tube. The position of the shutter tube can be adjusted. For example, the shutter tube can be moved laterally (parallel to the wafer) or vertically (towards or away from the wafer). Furthermore, the oxygen flow rate through the shutter tube can be adjusted, i.e., increased or decreased.

[0017] In some embodiments, the adjustable suction cup and adjustable shutter tube are dynamically operated, i.e., adjusted during the deposition process.

[0018] Systems and methods configured for depositing oxide layers provide control to form oxide layers with better thickness uniformity. The oxide layers formed according to the methods disclosed herein can be configured in manufacturing processes for FinFET devices, gate-all-around (GAA) devices, advanced devices, industrial semi-finished products, or other devices or products. Furthermore, the methods disclosed herein can be configured for front-end-of-line (FEOL) or back-end-of-line (BEOL) processes.

[0019] Figures 1A and 1B illustrate various cross-sectional views 100a-100b of a process tool including an adjustable wafer chuck 116 according to some embodiments. Specifically, Figure 1A illustrates various cross-sectional views 100a of the process tool including the adjustable wafer chuck 116, and Figure 1B illustrates various cross-sectional views 100b of the process tool including the adjustable wafer chuck 116 according to some embodiments.

[0020] As shown in various cross-sectional views 100a-100b of Figures 1A to 1B, the processing tool (e.g., manufacturing tool) includes a chamber housing 102 defining a processing chamber. In some embodiments, the chamber housing 102 may be or include, for example, steel (e.g., stainless steel), or aluminum. In some embodiments, the processing tool is configured for deposition processes (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), etc.), etching processes, or wafer testing processes (e.g., wafer probing), etc.

[0021] For example, in some embodiments, the processing tool may be configured as a deposition processing tool (e.g., a DC sputtering processing tool, an RF sputtering processing tool, etc.), and the deposition processing tool is configured to deposit a layer on / over a wafer 104 (e.g., a semiconductor wafer). In such embodiments, the process tool may include a first magnet 106, a second magnet 108 (e.g., an LDR magnet), a third magnet 110 (e.g., an electromagnet), and a sputtering target 112 (e.g., a sputtering target). Furthermore, the process tool may include a first power supply 114 (e.g., a DC power supply, an AC power supply, an RF power supply, etc.). In some embodiments, the first power supply 114 is electrically coupled to the sputtering target 112. In further embodiments, the sputtering target 112 may be or comprise, for example, magnesium (Mg), aluminum (Al), strontium (Sr), iron (Fe), nickel (Ni), cobalt (Co), manganese (Mn), titanium (Ti), copper (Cu), tantalum (Ta), other materials suitable for sputtering, or combinations thereof.

[0022] In some embodiments, a processing tool may be used to flow a processing gas (e.g., argon (Ar)) into a chamber housing 102 to deposit the layer on a wafer 104. A first power source 114 provides power (e.g., a DC voltage signal) to a sputtering target 112. During the process, the environment within the chamber housing 102 causes plasma to be generated within the chamber housing 102, such that atoms of the sputtering target 112 are ejected into the plasma (e.g., by bombarding the sputtering target 112) and deposited onto the wafer 104. In some embodiments, a first magnet 106, a second magnet 108, and / or a third magnet 110 are used during the deposition process to improve the deposition characteristics of the layer.

[0023] As shown in various cross-sectional views 100a-100b of Figures 1A to 1B, an adjustable wafer chuck 116 is disposed within a chamber housing 102. The adjustable wafer chuck 116 is configured to hold (e.g., clamp) a wafer 104 during manufacturing processes performed in the processing chamber. For example, the adjustable wafer chuck 116 is configured to hold the wafer 104 within the processing chamber during deposition processes (e.g., processes for depositing layers on the wafer 104). In some embodiments, the adjustable wafer chuck 116 may be disposed on a chuck base 117, and the chuck base 117 is configured to support the adjustable wafer chuck 116. In some embodiments, the chuck base 117 includes an insulating material that electrically insulates the adjustable wafer chuck 116 from the chamber housing 102.

[0024] In some embodiments, the adjustable wafer chuck 116 is an adjustable electrostatic chuck (ESC) (which may be referred to as an adjustable electrostatic wafer chuck). In such embodiments, the adjustable wafer chuck 116 is configured to hold the wafer 104 by electrostatic force. In a further embodiment of this type, the adjustable wafer chuck 116 is electrically coupled to an ESC circuit 118. The ESC circuit 118 is configured to activate the adjustable wafer chuck (e.g., by applying a voltage to the chuck electrodes) to electrostatically clamp the wafer 104 onto the adjustable wafer chuck 116. In some embodiments, the adjustable wafer chuck 116 is configured to withstand operation in high-temperature processing tools (e.g., the adjustable wafer chuck 116 may be a high-temperature electrostatic chuck and may operate at temperatures between about 200°C and about 450°C). In some embodiments, the adjustable wafer chuck 116 is configured to withstand operation in cryogenic process tools (e.g., the adjustable wafer chuck 116 may be an ultra-low temperature electrostatic chuck and can operate at a temperature of at least -40°C).

[0025] The adjustable wafer chuck 116 includes a pad portion 120 and a base portion 122. The pad portion 120 is disposed on one side (e.g., the upper side) of the base portion 122. The pad portion 120 includes a plurality of contact pads 126 (e.g., a plurality of minimum contact area (MCA) pads). In some embodiments, the plurality of adjustable base structures 124 are or include, for example, metals (e.g., aluminum, steel, etc.), polymers, plastics, or ceramics. In some embodiments, the plurality of contact pads 126 are or include, for example, ceramics (e.g., titanium nitride (TiN)), polymers, plastics, and some other suitable combinations thereof. In some embodiments, the plurality of contact pads 126 are or include materials different from the plurality of adjustable base structures 124.

[0026] A plurality of contact pads 126 are fixed to a plurality of adjustable base structures 124. In some embodiments, each contact pad 126 corresponds to one adjustable base structure. For example, a first contact pad 126a of the plurality of contact pads 126 corresponds to a first adjustable base structure 124a of the plurality of adjustable base structures 124, a second contact pad 126b of the plurality of contact pads 126 corresponds to a second adjustable base structure 124b of the plurality of adjustable base structures 124, and so on. Each contact pad is fixed to a corresponding one of the plurality of adjustable base structures 124. For example, a first contact pad 126a is fixed to a first adjustable base structure 124a, a second contact pad 126b is fixed to a second adjustable base structure 124b, and so on.

[0027] A plurality of contact pads 126 may be attached to a plurality of adjustable base structures 124 in various ways. For example, the plurality of contact pads 126 may be attached to the plurality of adjustable base structures 124 by an adhesive. In other embodiments, the plurality of contact pads 126 may be attached to the plurality of adjustable base structures 124 by one or more bonds (e.g., by chemical bonds between the materials of the plurality of contact pads 126 and the materials of the plurality of adjustable base structures 124). In still other embodiments, the plurality of contact pads 126 may be directly attached to a plurality of intermediate plates (e.g., polymer plates, ceramic plates, etc.), which are attached to the plurality of adjustable base structures 124 (e.g., by an adhesive). It should be understood that other methods of attaching the plurality of contact pads 126 to the plurality of adjustable base structures 124 are also feasible.

[0028] A plurality of adjustable base structures 124 are configured to move along a plane (y-plane) in a first direction (e.g., upward) and a second direction opposite to the first direction (e.g., downward). The plurality of adjustable base structures 124 are configured to move along the plane such that each contact pad 126 is spaced approximately the same distance from the wafer during a manufacturing step (e.g., during a deposition process). In a further embodiment, the plurality of adjustable base structures 124 may be configured to move along the plane such that each contact pad 126 contacts the wafer during a manufacturing step. In some embodiments, the plurality of adjustable base structures 124 are configured to move independently along the plane (y-plane). For example, a first adjustable base structure 124a may move independently of any of the other plurality of adjustable base structures 124 along the plane (y-plane) in both the first and second directions, a second adjustable base structure 124b may move independently of any of the other plurality of adjustable base structures 124 along the plane (y-plane) in both the first and second directions, and so on.

[0029] Because the plurality of adjustable base structures 124 are configured to move along a plane (y-plane) in the first and second directions, and because the plurality of contact pads 126 are fixed to the plurality of adjustable base structures 124, the distance (clamping distance) between the plurality of contact pads 126 and the wafer 104 can be adjusted (e.g., adjusted according to the feedback loop). Therefore, if the adjustable wafer chuck 116 holds a warped wafer (e.g., the wafer has a concave or convex shape as seen in the cross-sectional view shown in Figure 1B), the plurality of contact pads 126 and the wafer 104 can be more uniform on the warped wafer compared to a typical wafer chuck (e.g., a non-adjustable wafer chuck). Therefore, the plurality of contact pads 126 of the adjustable wafer chuck 116 are less prone to premature wear. Thus, the adjustable wafer chuck 116 can reduce the cost of manufacturing ICs (e.g., increase productivity, reduce maintenance costs, etc.).

[0030] Figures 2A and 2B illustrate various views 200a-200b of an adjustable wafer chuck 116 according to some embodiments. Figure 2A shows a top view 200a of an adjustable wafer chuck 116 according to some embodiments, and Figure 2B shows a cross-sectional view 200b of an adjustable wafer chuck 116 according to some embodiments.

[0031] As shown in various views of Figures 2A to 2B, a plurality of adjustable base structures 124 may have an annular shape. The plurality of adjustable base structures 124 may be laterally spaced from each other. In some embodiments, the plurality of adjustable base structures 124 are laterally spaced from each other through gaps 202. For example, a first adjustable base structure 124a is laterally spaced from a second adjustable base structure 124b through a first gap 202a, a second adjustable base structure 124b is laterally spaced from a third adjustable base structure 124c through a second gap 202b, and so on. The gaps 202 extend (completely) through the plurality of adjustable base structures 124, such that the plurality of adjustable base structures 124 are (completely) laterally spaced from each other. For example, the innermost sidewall of the first adjustable base structure 124a laterally surrounds the outermost sidewall of the second adjustable base structure 124b, and the innermost sidewall of the first adjustable base structure 124a and the outermost sidewall of the second adjustable base structure 124b are laterally spaced apart through the first gap 202a. In some embodiments, the plurality of adjustable base structures 124 are concentric.

[0032] In some embodiments, the innermost adjustable base structure 124i of a plurality of adjustable base structures 124 has a thickness (e.g., ring thickness) different from one or more of the other adjustable base structures 124. In a further embodiment, the thickness (e.g., ring thickness) of the innermost adjustable base structure 124i may be greater than the thickness of one or more of the other adjustable base structures 124. For example, a first adjustable base structure 124a has a first thickness 204 (e.g., a first ring thickness), and the innermost adjustable base structure 124i has a second thickness 206 (e.g., a second ring thickness), which is greater than the first thickness 204. In a further embodiment, the innermost adjustable base structure 124i may have a greater thickness (e.g., a larger ring thickness) than each of the other adjustable base structures 124. For example, the third adjustable base structure 124c has a third thickness 208 (e.g., a third ring thickness); and the second thickness 206 is greater than the first thickness 204 and the third thickness 208, and so on.

[0033] In some embodiments, the first thickness 204 and the third thickness 208 are substantially the same, and the second thickness 206 is greater than the first thickness 204 and the third thickness 208. In other embodiments, the thicknesses of the plurality of adjustable base structures 124 may be substantially the same. For example, in some embodiments, the first thickness 204, the second thickness 206, and the third thickness 208 are substantially the same. In a further embodiment, the thicknesses of the plurality of adjustable base structures 124 may be between about 1 mm and about 150 mm. In a further embodiment, the thicknesses of the plurality of adjustable base structures 124 may be between about 25 mm and about 35 mm. For example, the first thickness 204 may be between about 25 mm and about 35 mm, the second thickness 206 may be between about 25 mm and about 35 mm, the third thickness 208 may be between about 25 mm and about 35 mm, and so on. In still other embodiments, the thickness of the plurality of adjustable base structures 124 may be about 30 mm.

[0034] As shown in the various views of Figures 2A to 2B, the plurality of contact pads 126 include a plurality of contact pads 1261-1262. Each contact pad 1261-1262 includes one or more individual contact pads from the plurality of contact pads 126. For example, the plurality of contact pads 1261-1262 includes a first group of contact pads 1261 and a second group of contact pads 1262. The first group of contact pads 1261 includes one or more first contact pads from the plurality of contact pads 126. The second group of contact pads 1262 includes one or more second contact pads from the plurality of contact pads 126. The plurality of contact pads 1261-1262 are respectively fixed to a plurality of adjustable base structures 124. For example, the contact pads of the first group of contact pads 1261 are fixed to a first adjustable base structure 124a, the contact pads of the second group of contact pads 1262 are fixed to a second adjustable base structure 124b, and so on.

[0035] Each contact pad 126 has a height 210 and a width 212. In a further embodiment, the height 210 is between about 1 mm and about 3 mm. In some embodiments, the heights of the contact pads in one group of a plurality of contact pads 1261-1262 are substantially the same. For example, the heights of one or more first contact pads may be substantially the same (e.g., substantially the same includes minor variations due to the manufacturing process). In a further embodiment, the heights of the plurality of contact pads 126 may be substantially the same. In other embodiments, the height of one or more contact pads in a group of contact pads may be different from the height of one or more other contact pads in that group. For example, the height of the first first contact pad may be different from the height of the second first contact pad. In other embodiments, the height of one of the plurality of contact pads 126 may be different from the height of one or more other contact pads in the plurality of contact pads 126. In a further embodiment, the contact pads in one group of the complex array of contact pads 1261-1262 are substantially the same height, and the contact pads in the other group of the complex array of contact pads 1261-1262 are substantially the same height, but the height of the contact pads in one group of the complex array of contact pads 1261-1262 is different from the height of the contact pads in the other group of the complex array of contact pads 1261-1262. For example, each first contact pad may have a first height, and each second contact pad may have a second height different from the first height.

[0036] As shown in the various views of Figures 2A to 2B, the suction cup base 117 may include a plurality of base structures 214. For example, the suction cup base 117 may include a first base structure 214a and a second base structure 214b, etc. In some embodiments, a plurality of adjustable base structures 124 are respectively disposed (e.g., fixed to) a plurality of base structures 214. For example, a first adjustable base structure 124a is disposed on a first base structure 214a, and a second adjustable base structure 124b is disposed on a second base structure 214b.

[0037] A plurality of base structures 214 correspond to a plurality of adjustable base structures 124. For example, a first base structure 214a corresponds to a first adjustable base structure 124a, a second base structure 214b corresponds to a second adjustable base structure 124b, and so on. Each base structure 214 has a shape corresponding to the shape of its corresponding adjustable base structure. For example, the shape of the first base structure 214a corresponds to the shape of the first adjustable base structure 124a. More specifically, if the first adjustable base structure 124 has an annular shape, then the first base structure 214a has a corresponding annular shape. In a further embodiment, the plurality of base structures 214 are laterally spaced from each other (e.g., through gaps).

[0038] Figure 3 illustrates a cross-sectional view 300 of an adjustable wafer chuck 116 according to some embodiments.

[0039] As shown in the cross-sectional view 300 of Figure 3, the wafer 104 may warp because a first layer 302 is disposed / formed on the wafer 104. More specifically, the first layer 302 may be a compression film that causes the wafer 104 to warp.

[0040] As shown in cross-sectional view 300 of Figure 3, a plurality of actuators 304 are coupled to a plurality of adjustable base structures 124. In some embodiments, each actuator 304 corresponds to one of the adjustable base structures 124. For example, a first actuator 304a of the plurality of actuators 304 corresponds to a first adjustable base structure 124a, a second actuator 304b of the plurality of actuators 304 corresponds to a second adjustable base structure 124b, and so on. In a further embodiment, the plurality of actuators correspond to the same adjustable base structure. For example, a first actuator 304a and a third actuator 304c of the plurality of actuators 304 correspond to the first adjustable base structure 124a, a second actuator 304b and a fourth actuator 304d of the plurality of actuators 304 correspond to the second adjustable base structure 124b, and so on.

[0041] In some embodiments, a plurality of actuators 304 may be coupled to a plurality of adjustable base structures 124 through a plurality of base structures 214. For example, a first actuator 304a and a third actuator 304c may be (directly) coupled (e.g., fixed) to a first base structure 214a, which is coupled to a first adjustable base structure 124a; a second actuator 304b and a fourth actuator 304d may be (directly) coupled (e.g., fixed) to a second base structure 214b, which is coupled to a second adjustable base structure 124b; and so on. In other embodiments, a plurality of actuators 304 may be (directly) coupled to a plurality of adjustable base structures 124, or a plurality of actuators 304 may be coupled to a plurality of adjustable base structures 124 through some other structure.

[0042] A plurality of actuators 304 are configured to move their corresponding adjustable base structures along a plane (y-plane) in a first direction 305 (e.g., upward) and a second direction 307 (e.g., downward). For example, a first actuator 304a and a third actuator 304c are configured to move a first adjustable base structure 124a along the plane (y-plane) in the first direction 305 and the second direction 307; a second actuator 304b and a fourth actuator 304d are configured to move a second adjustable base structure 124b along the plane (y-plane) in the first direction 305 and the second direction 307; and so on. The plurality of actuators 304 are configured to move their corresponding adjustable base structures along the plane (y-plane) such that each contact pad 126 is spaced approximately the same distance from the wafer 104 during manufacturing steps (e.g., in a deposition process).

[0043] In some embodiments, a plurality of actuators 304 are configured to independently move their respective adjustable base structures along a plane (y-plane). For example, a first actuator 304a and a third actuator 304c are configured to move a first adjustable base structure 124a along a plane (y-plane) in a first direction and a second direction, independently of any of the other plurality of adjustable base structures; a second actuator 304b and a fourth actuator 304d are configured to move a second adjustable base structure 124b along a plane (y-plane) in a first direction and a second direction, independently of any of the other plurality of adjustable base structures 124; and so on. In some embodiments, the plurality of actuators 304 may be, for example, electric actuators, pneumatic actuators, hydraulic actuators, linear actuators, some other suitable actuators, or combinations thereof.

[0044] In some embodiments, each actuator 304 includes an extension structure 306 (e.g., a drive tube, piston, etc.) and a housing structure 308. The housing structure 308 is configured to be held in a fixed position, while the extension structure 306 is configured to pass through the housing structure 308 along a plane (y-plane). The housing structure 308 includes a motion mechanism (e.g., a gear, magnet, screw, valve, etc.) and is configured to allow the extension structure 306 to move relative to the housing structure 308. The extension structure 306 of each actuator 304 is coupled to one or more of a plurality of adjustable base structures 124 (e.g., through a plurality of base structures 214). In this way, the plurality of actuators 304 can selectively move a corresponding adjustable base structure along a plane (y-plane) by moving the extension structure 306.

[0045] Figure 4 illustrates a cross-sectional view 400 of an adjustable wafer chuck 116 according to some other embodiments.

[0046] As shown in cross-sectional view 400 of Figure 4, wafer 104 is warped / bent in the opposite manner to that in Figure 3. Wafer 104 may warp because a second layer 402 is disposed / formed on wafer 104. More specifically, the second layer 402 may be a stretch film that causes wafer 104 to warp.

[0047] Because the plurality of actuators 304 are configured to move their respective adjustable base structures along a plane (y-plane) in the first direction 305 and the second direction 307, the plurality of actuators 304 are able to move the plurality of adjustable base structures 124 such that each contact pad 126 is spaced approximately the same distance from the wafer 104 during the manufacturing steps (e.g., in the deposition process). It is understood that even if the wafer 104 is not warped, the plurality of actuators 304 are still able to move the plurality of adjustable base structures 124 such that each contact pad 126 is spaced approximately the same distance from the wafer 104 during the manufacturing steps.

[0048] Figure 5 illustrates a cross-sectional view 500 of an adjustable wafer chuck 116 according to some other embodiments.

[0049] As shown in the cross-sectional view 500 of Figure 5, some of the contact pads 126 may have a different height than the other contact pads 126. For example, the plurality of contact pads 1261-1263 includes a first group of contact pads 1261, a second group of contact pads 1262, and a third group of contact pads 1263. The third group of contact pads 1263 includes one or more third contact pads from the plurality of contact pads 126. In some embodiments, the contact pads of the third group of contact pads 1263 are fixed to a third adjustable base structure 124c. The contact pads of the first group of contact pads 1261 have a first height 502, the contact pads of the second group of contact pads 1262 have a second height 504, the contact pads of the third group of contact pads 1263 have a third height 506, and the contact pads of the other groups in the plurality of contact pads 1261-1263 have a fourth height 508.

[0050] In some embodiments, the fourth height 508 differs from the first height 502, the second height 504, and / or the third height 506. In some embodiments, the third height 506 differs from the first height 502, the second height 504, and / or the fourth height 508. In some embodiments, the second height 504 differs from the first height 502, the third height 506, and / or the fourth height 508. In some embodiments, the first height 502 differs from the second height 504, the third height 506, and / or the fourth height 508.

[0051] In some embodiments, the third height 506 is smaller than the fourth height 508. In some embodiments, the second height 504 is smaller than the third height 506. In some embodiments, the first height 502 is smaller than the second height 504. In some embodiments, the first height 502 may be between about 0.5 mm and about 4.9 mm. In a further embodiment, the first height 502 may be between about 0.5 mm and about 1.5 mm. In still other embodiments, the first height 502 may be about 1 mm. In some embodiments, the fourth height 508 may be between about 0.6 mm and about 5 mm. In a further embodiment, the fourth height 508 may be between about 2.5 mm and about 3.5 mm. In still other embodiments, the first height 502 may be about 3 mm. In a further embodiment, the second height 504 is between the first height 502 and the third height 506. In a further embodiment, the third height 506 is between the second height 504 and the fourth height 508.

[0052] Because the plurality of actuators 304 are configured to independently move their corresponding adjustable base structures along a plane (y-plane), the plurality of actuators 304 are able to move the plurality of adjustable base structures 124 even if the plurality of contact pads 126 have different heights, such that each of the plurality of contact pads 126 is spaced approximately the same distance from the wafer 104 during manufacturing steps (e.g., during a deposition process). In some embodiments, the plurality of contact pads 126 have different heights due to expected wear of the plurality of contact pads 126 (e.g., the outer contact pads wear out faster than the inner contact pads). In such embodiments, the adjustable wafer chuck 116 can have a longer lifespan than a typical wafer chuck (e.g., because the adjustable wafer chuck 116 is able to compensate for height variations). In other embodiments, due to the process of forming the plurality of contact pads 126, the plurality of contact pads 126 may have different heights (e.g., the process of depositing the plurality of contact pads 126 onto the plurality of adjustable base structures 124 may be relatively uneven). In such embodiments, the adjustable wafer chuck 116 may have improved initial performance compared to a typical wafer chuck (e.g., a non-adjustable wafer chuck) (e.g., because the adjustable wafer chuck 116 is able to compensate for height variations).

[0053] Figure 6 illustrates a cross-sectional view 600 of an adjustable wafer chuck 116 according to some other embodiments.

[0054] As shown in cross-sectional view 600 of Figure 6, in some embodiments, a plurality of actuators 304 are disposed between a suction cup base 117 and a plurality of adjustable base structures 124. In such embodiments, the suction cup base 117 may include a continuous structure on which each actuator 304 is disposed. In other such embodiments, the suction cup base 117 may include a plurality of base structures 214. In a further embodiment, a housing structure 308 of each actuator 304 may be (directly) disposed (e.g., fixed to) the suction cup base 117. In a further embodiment, extension structures of the plurality of actuators 304 may be (directly) coupled to (e.g., fixed to) the plurality of adjustable base structures 124.

[0055] Figures 7A and 7B illustrate schematic diagrams 700a-700b of systems configured to operate the adjustable wafer chuck 116 according to some embodiments. More specifically, schematic diagram 700a of Figure 7A illustrates system 702 before the adjustable wafer chuck 116 is adjusted to bend the wafer, while schematic diagram 700b of Figure 7B illustrates system 702 after the adjustable wafer chuck 116 has been adjusted to bend the wafer.

[0056] As shown in schematic diagrams 700a-700b of Figures 7A to 7B, system 702 includes an adjustable wafer chuck 116, a plurality of actuators 304, a plurality of sensors 704, a plurality of power supplies 706, and a controller 708. As shown in schematic diagrams 700a-700b of Figures 7A to 7B, a plurality of clamping electrodes 710 are respectively disposed in a plurality of adjustable base structures 124. For example, the plurality of adjustable base structures 124 may include a first adjustable base structure 124a, a second adjustable base structure 124b, a third adjustable base structure 124c, and a fourth adjustable base structure 124d. Furthermore, a first clamping electrode 710a of the plurality of clamping electrodes 710 is disposed in a first adjustable base structure 124a; a second clamping electrode 710b of the plurality of clamping electrodes 710 is disposed in a second adjustable base structure 124b; a third clamping electrode 710c of the plurality of clamping electrodes 710 is disposed in a third adjustable base structure 124c; and a fourth clamping electrode 710d of the plurality of clamping electrodes 710 is disposed in a fourth adjustable base structure 124d. In some embodiments, the ESC circuit (e.g., ESC circuit 118) includes a plurality of sensors 704, a plurality of power supplies 706, and / or a controller 708.

[0057] A plurality of power sources 706 are electrically connected to a plurality of clamping electrodes 710, respectively. For example, a first power source 706a is electrically connected to a first clamping electrode 710a, a second power source 706b is electrically connected to a second clamping electrode 710b, a third power source 706c is electrically connected to a third clamping electrode 710c, and a fourth power source 706d is electrically connected to a fourth clamping electrode 710d. The plurality of power sources 706 are configured to provide power (e.g., AC voltage signal, DC voltage signal, etc.) to the plurality of clamping electrodes 710, respectively. For example, a first power source 706a is configured to provide a first power signal (e.g., AC voltage signal) to the first clamping electrode 710a, a second power source 706b is configured to provide a second power signal (e.g., AC voltage signal) to the second clamping electrode 710b, and so on. In some embodiments, a plurality of power supplies 706 are configured to provide power to a plurality of clamping electrodes 710 respectively to activate an adjustable wafer chuck, thereby electrostatically clamping the wafer 104 onto the adjustable wafer chuck 116. In some embodiments, the plurality of power supplies 706 may be a discrete power unit. It should be understood that in other embodiments, the plurality of power supplies 706 may be part of a larger power unit.

[0058] A plurality of power sources 706 are electrically coupled to a plurality of clamping electrodes 710 via a plurality of electrical connectors. The plurality of electrical connectors are configured to provide electrical connection between the plurality of clamping electrodes 710 and the plurality of power sources 706. In some embodiments, the plurality of electrical connectors may be, or include, for example, DC connectors, AC connectors, barrel connectors, USB sockets, pin and socket connectors, some other types of electrical connectors, or combinations thereof.

[0059] Each electrical connector is coupled to one of the plurality of clamping electrodes 710. For example, a first electrical connector provides an electrical connection to a first clamping electrode 710a, a second electrical connector provides an electrical connection to a second clamping electrode 710b, and so on. In some embodiments, each electrical connector provides an electrical connection between one of the plurality of clamping electrodes 710 and one of the plurality of power sources 706. For example, a first electrical connector provides an electrical connection between a first clamping electrode 710a and a first power source 706a, a second electrical connector provides an electrical connection between a second clamping electrode 710b and a second power source 706b, and so on. In other embodiments, some of the plurality of electrical connectors provide electrical connections between one of the plurality of clamping electrodes 710 and another of the plurality of clamping electrodes 710 (e.g., the connectors may be arranged such that the clamping electrodes are electrically coupled to the power sources in a daisy-chain manner). For example, a first electrical connector provides an electrical connection between a first clamping electrode 710a and a first power supply 706a, a second electrical connector provides an electrical connection between a first clamping electrode 710a and a second clamping electrode 710b, a third electrical connector provides an electrical connection between a second clamping electrode 710b and a third clamping electrode 710c, and so on.

[0060] In some embodiments, a plurality of electrical connectors allow a plurality of adjustable base structures 124 to move along a plane (y-plane). For example, because the plurality of adjustable base structures 124 are configured to move along a plane (y-plane), some physical connections (e.g., solid conductive structures providing lateral extensions through the suction cups) do not provide a configuration for the adjustable base structure 124 to move along a plane (y-plane) (e.g., if the adjustable base structure 124 moves along the plane, the solid conductive structure will break). Therefore, by having a plurality of electrical connectors, the adjustable base structure 124 can be able to move freely along a plane (y-plane) while maintaining electrical connections between a plurality of power supplies 706 and a plurality of clamping electrodes 710.

[0061] A plurality of sensors 704 are electrically coupled to a controller 708. The plurality of sensors 704 are configured to determine the distance between a plurality of contact pads 126 and the surface (e.g., the lower surface) of wafer 104. Sensors 704 are configured to determine the distance between a plurality of clamping electrodes 710 and the surface of wafer 104. The plurality of sensors 704 may be or include, for example, electrical sensors (e.g., voltage sensors, current sensors, etc.), capacitive sensors (e.g., proximity sensors), time-of-flight sensors, ranging sensors, force sensors, pressure sensors, other types of sensors, or combinations thereof.

[0062] In some embodiments, a plurality of sensors 704 are configured to determine the distance between a plurality of contact pads 126 and the surface of the wafer 104 by determining the distance between a plurality of clamping electrodes 710 and the surface of the wafer 104. For example, a first sensor 704a of the plurality of sensors 704 is configured to determine the distance between a first clamping electrode 710a and the lower surface of the wafer 104, a second sensor 704b of the plurality of sensors 704 is configured to determine the distance between a second clamping electrode 710b and the lower surface of the wafer 104, a third sensor 704c of the plurality of sensors 704 is configured to determine the distance between a third clamping electrode 710c and the lower surface of the wafer 104, and a fourth sensor 704d of the plurality of sensors 704 is configured to determine the distance between a fourth clamping electrode 710d and the lower surface of the wafer 104.

[0063] A plurality of sensors 704 are configured to generate a plurality of first electrical signals corresponding to the distances between the plurality of clamping electrodes 710 and the surfaces of the wafer 104. For example, as shown in schematic diagram 700a of Figure 7A, the first clamping electrode 710a is spaced from the lower surface of the wafer 104 by a first distance (e.g., 10 mm), the second clamping electrode 710b is spaced from the lower surface of the wafer 104 by a second distance (e.g., 10.5 mm), the third clamping electrode 710c is spaced from the bottom surface of the wafer 104 by a third distance (e.g., 11 mm), and so on. In this way, the first sensor 704a generates a first electrical signal corresponding to the first distance, the second sensor 704b generates a second electrical signal corresponding to the second distance, the third sensor 704c generates a signal corresponding to the third distance, and so on. The plurality of sensors 704 are configured to provide the plurality of first electrical signals to the controller 708.

[0064] It is understood that the plurality of first electrical signals corresponding to the distances between the plurality of clamping electrodes 710 and the surface of the wafer 104 can also be converted into the distances between the plurality of contact pads 126 and the surface of the wafer 104. For example, by analyzing the distances between the plurality of contact pads 126 and the plurality of clamping electrodes 710 respectively, the distances between the plurality of clamping electrodes 710 and the surface of the wafer 104 can be converted into the distances between the plurality of contact pads 126 and the surface of the wafer 104. In this type of embodiment, the controller 708 can be configured to analyze the distances between the plurality of contact pads 126 and the plurality of clamping electrodes 710 respectively.

[0065] In some embodiments, a plurality of sensors 704 are configured to determine the distance between a plurality of clamping electrodes 710 and the surfaces of a plurality of wafers 104 by measuring the resistance between the plurality of clamping electrodes 710 and the surfaces of a plurality of wafers 104. For example, a first sensor 704a is configured to determine the resistance between a first clamping electrode 710a and a first power supply 706a, a second sensor 704b is configured to determine the resistance between a second clamping electrode 710b and a second power supply 706b, and so on. In a further embodiment, the plurality of sensors 704 are electrically coupled between the clamping electrode corresponding to the sensor 704 and the power supply corresponding to the sensor 704. For example, a first sensor 704a is electrically coupled between the first clamping electrode 710a and the first power supply 706a (e.g., electrically coupled along the electrical connection (e.g., a wire) between the first clamping electrode 710a and the first power supply 706a).

[0066] Controller 708 is configured to receive a plurality of first electrical signals from a plurality of sensors 704. In some embodiments, controller 708 is configured to generate a plurality of second electrical signals based on the plurality of first electrical signals. For example, controller 708 receives a first electrical signal from a first sensor 704a and generates a fourth electrical signal corresponding to the first electrical signal, controller 708 receives a second electrical signal from a second sensor 704b and generates a fifth electrical signal corresponding to the second electrical signal, controller 708 receives a third electrical signal from a third sensor 704c and generates a sixth electrical signal corresponding to the third electrical signal, and so on. In a further embodiment, controller 708 is configured to provide a plurality of second electrical signals to a plurality of actuators 304. For example, controller 708 is configured to provide a fourth electrical signal to first actuator 304a, controller 708 is configured to provide a fifth electrical signal to second actuator 304b, controller 708 is configured to provide a sixth electrical signal to third actuator 304c, and so on.

[0067] A plurality of actuators 304 are configured to receive a plurality of second electrical signals. As shown in schematic diagram 700b of Figure 7B, the plurality of actuators 304 are configured to move the extension structure 306 corresponding to the actuator 304 in response to receiving the plurality of second electrical signals, thereby moving the corresponding adjustable base structure a predetermined distance. In this way, the distance between the plurality of contact pads 126 and the surface of the wafer 104 can be reduced. In other words, by reducing the distance between the plurality of contact pads 126 and the surface of the wafer 104, the adjustable wafer chuck 116 can compensate for wafer warping. It should also be understood that the plurality of actuators 304 are configured to move the extension structure 306 corresponding to the actuator 304 to increase the distance between the plurality of contact pads 126 and the surface of the wafer 104. In other words, the adjustable wafer chuck 116 is adjusted by reducing and / or increasing the distance between the plurality of contact pads 126 and the surface of the wafer 104 to compensate for the warped wafer.

[0068] For example, a first sensor 704a provides a first electrical signal to a controller 708, and a second sensor 704b provides a second electrical signal to the controller 708. The controller 708 can analyze the first electrical signal to determine the distance between the first set of contact pads 1261 and the warped wafer (e.g., 0 mm, as shown in schematic diagram 700a of Figure 7A), and the controller 708 can analyze the second electrical signal to determine the distance between the second set of contact pads 1262 and the warped wafer (e.g., 0.5 mm, as shown in schematic diagram 700a of Figure 7A).

[0069] In some embodiments, the controller 708 generates a fourth electrical signal corresponding to the first electrical signal and provides the fourth electrical signal to the first actuator 304a, and generates a seventh electrical signal corresponding to the first electrical signal and provides the seventh electrical signal to the third actuator 304c. In other embodiments, if the controller 708 analyzes the first and second electrical signals and determines that one of the first and second electrical signals (e.g., the first electrical signal) indicates that one of the multiple contact pads 1261-1263 (e.g., the first group of contact pads 1261) is already within a predefined range (e.g., 0 mm to 0.2 mm), since the first actuator 304a and the third actuator 304c do not need to adjust the corresponding adjustable base structure to be closer (or farther) from the lower surface of the wafer 104, the controller 708 may not provide electrical signals to the first actuator 304a or the third actuator 304c (e.g., it may not be necessary to provide electrical signals to either of these two actuators). In some embodiments, the controller 708 generates a fifth electrical signal corresponding to the second electrical signal and provides the fifth electrical signal to the second actuator 304b, and generates an eighth electrical signal corresponding to the second electrical signal and provides the eighth electrical signal to the second actuator 304b. In response to receiving the fifth and eighth electrical signals, the second actuator 304b and the fourth actuator 304d move the extension structure 306 corresponding to the second actuator 304b and the fourth actuator 304d by a corresponding distance, thereby moving the second adjustable base structure 124b by a predetermined distance (e.g., 0.5 mm in the first direction 305) along a plane (y-plane). Therefore, the distance between the second set of contact pads 1262 can be reduced (or increased).

[0070] Figure 8 illustrates a top view 800 of an adjustable wafer chuck 116 according to some embodiments.

[0071] As shown in the top view 800 of Figure 8, a plurality of slots 802 may be provided in a plurality of adjustable base structures 124. For example, a first slot 802a may be provided in a plurality of adjustable base structures 124, a second slot 802b may be provided in a plurality of adjustable base structures 124, and so on. In some embodiments, the plurality of slots 802 are configured to guide a processing gas (e.g., argon (Ar)) through an adjustable wafer chuck 116.

[0072] As shown in the top view 800 of Figure 8, a plurality of slots 802 are defined by a plurality of sub-slot structures disposed in a plurality of adjustable base structures 124. For example, a first slot 802a is defined by a first sub-groove structure disposed in a first adjustable base structure 124a, the first sub-groove structure is disposed in a second adjustable base structure 124b, the first sub-groove structure is disposed in a third adjustable base structure 124c, and so on; and a second slot 802b is defined by a second sub-slot structure disposed in a first adjustable base structure 124a, the second sub-slot structure is disposed in a second adjustable base structure 124b, the second sub-groove structure is disposed in a third adjustable base structure 124c, and so on.

[0073] In some embodiments, a plurality of sub-slot structures are aligned such that a plurality of slots 802 extend radially along a predetermined direction away from the center point of the innermost adjustable base structure 124i (e.g., the plurality of slots 802 extend along a radial plane intersecting the center point of the innermost adjustable base structure 124i). For example, a first sub-slot structure disposed in a plurality of adjustable base structures 124 is aligned such that a first slot 802a extends radially from the center point of the innermost adjustable base structure 124i along a first direction; a second sub-slot structure disposed in a plurality of adjustable base structures 124 is aligned such that a second slot 802b extends radially from the center point of the innermost adjustable base structure 124i along a second direction (e.g., rotated approximately 45 degrees from the first direction), and so on.

[0074] Figure 9 illustrates a top view 900 of an adjustable wafer chuck 116 according to some other embodiments.

[0075] As shown in the top view 900 of Figure 9, the innermost adjustable base structure 124i may be disc-shaped (rather than annular). Additionally, as shown in the top view 900 of Figure 9, in some embodiments, in addition to the innermost adjustable base structure 124i, a plurality of slots 802 may be provided in each adjustable base structure 124.

[0076] Figure 10 illustrates a top view 1000 of an adjustable wafer chuck 116 according to some other embodiments.

[0077] As shown in the top view 1000 of Figure 10, a set or multiple sets of contact pads 1261-1262 includes multiple rows of contact pads 1002a-1002b. For example, the first set of contact pads 1261 includes a first row of contact pads 1002a and a second row of contact pads 1002b. In some embodiments, the rows of contact pads 1002a-1002b are concentric rows, as shown in the top view 1000 of Figure 10. Although the top view 1000 of Figure 10 illustrates the first set of contact pads 1261 comprising two rows of contact pads, it will be understood that the first set of contact pads 1261 (and / or any other set or multiple sets of contact pads 1261-1262) may include any number of rows of contact pads (e.g., three, four, five, etc.). For clarity, only a portion of the multiple sets of contact pads 1261-1262 is shown in Figure 10.

[0078] Figure 11 illustrates a top view 1100 of an adjustable wafer chuck 116 according to some other embodiments.

[0079] As shown in the top view 1100 of Figure 11, in some embodiments, a plurality of first alignment indicators 1102 may be respectively disposed on a plurality of adjustable base structures 124. For example, a first alignment indicator 1102a is disposed on a first adjustable base structure 124a, a second alignment indicator 1102b is disposed on a second adjustable base structure 124b, and a third alignment indicator 1102c is disposed on a third adjustable base structure 124c. In some embodiments, the plurality of first alignment indicators 1102 may be structures disposed in the plurality of adjustable base structures 124 (e.g., indicator structures (e.g., arrows, indentations, lines, grooves, etc.) embossed in the adjustable base structures). In other embodiments, the plurality of first alignment indicators 1102 may be structures disposed on the plurality of adjustable base structures 124 (e.g., indicator structures protruding from (or disposed on) the surfaces of the respective support structures, such as arrows, protrusions, lines, grooves, etc.). The plurality of first alignment indicators 1102 are configured (e.g., utilized by a user) to align the adjustable base structures 124 in a predefined manner. For example, the plurality of first alignment indicators 1102 allow the user to easily align the adjustable base structures 124 such that the sub-slot structures are properly aligned along the radial plane corresponding to the sub-slot structures.

[0080] As shown in the top view 1100 of Figure 11, in some embodiments, a plurality of fastening structures 1104 are respectively disposed on / in a plurality of adjustable base structures 124. In some embodiments, the plurality of fastening structures 1104 may be, for example, bolt-type fasteners, screw-type fasteners, pin-type fasteners, clamp-type fasteners, certain other types of fasteners, or combinations thereof. The plurality of fastening structures 1104 are configured to fasten the plurality of adjustable base structures 124 to a mounting structure. For example, in some embodiments, the mounting structure may be a suction cup base 117 including a plurality of base structures 214 (e.g., see Figures 2A to 2B). The plurality of base structures 214 include a first base structure 214a, a second base structure 214b, etc. A first fastening structure 1104a (e.g., a machine screw) engages with a first adjustable base structure 124a (e.g., through threads in the first adjustable base structure 124a) and fastens the first adjustable base structure 124a to a first base structure 214a (e.g., through threads in the first base structure 214a); a second fastening structure 1104b engages with a second adjustable base structure 124b and fastens the second adjustable base structure 124b to the second base structure 214b; and so on.

[0081] Because the adjustable wafer chuck 116 includes a plurality of first alignment indicators 1102 and / or because the adjustable wafer chuck 116 is configured to be secured via a plurality of fastening structures 1104, the adjustable wafer chuck 116 may be easier to repair than a typical wafer chuck. For example, once a plurality of contact pads on a typical wafer chuck reach a predetermined wear level, the entire wafer chuck may have to be removed from the processing chamber (even if some parts of the typical wafer chuck are still in good working order) and sent to a specialized processing facility to repair the plurality of contact pads on the typical wafer chuck. On the other hand, once a plurality of contact pads 126 reach a predetermined wear level, the user can simply loosen one or more of the plurality of adjustable base structures 124 and replace them with new adjustable base structures. Therefore, the adjustable wafer chuck 116 can reduce the cost of manufacturing ICs (e.g., by reducing downtime, reducing maintenance costs, reducing material waste, etc.).

[0082] Figure 12 illustrates a cross-sectional view 1200 of an adjustable wafer chuck 116 according to some other embodiments.

[0083] As shown in the cross-sectional view 1200 of Figure 12, a support structure 1202 is disposed between the suction cup base 117 and a plurality of adjustable base structures 124. The support structure 1202 is fixed to the suction cup base 117. In some embodiments, the support structure 1202 may include a plurality of individual support structures 1204. For example, the support structure 1202 may include a first individual support structure 1204a, a second individual support structure 1204b, etc. In some embodiments, the plurality of individual support structures 1204 are respectively disposed (e.g., fixed to) a plurality of base structures 214. For example, the first individual support structure 1204a is disposed on the first base structure 214a, the second individual support structure 1204b is disposed on the second base structure 214b, and so on.

[0084] A plurality of adjustable base structures 124 are configured to engage with a support structure 1202. In some embodiments, the plurality of adjustable base structures 124 are configured to engage with a plurality of individual support structures 1204, respectively. For example, a first adjustable base structure 124a is configured to engage with a first individual support structure 1204a, a second adjustable base structure 124b is configured to engage with a second individual support structure 1204b, and so on.

[0085] In a further embodiment, a plurality of adjustable base structures 124 are configured to be fastened to the support structure 1202 via a plurality of fastening structures 1104 (e.g., the plurality of fastening structures 1104 engage threads disposed in the support structure 1202). In other words, the support structure 1202 may be a mounting structure (e.g., a structure to which the plurality of adjustable base structures 124 are fastened via the plurality of fastening structures 1104). In a further embodiment, the plurality of adjustable base structures 124 are configured to be fastened to a plurality of individual support structures 1204 respectively. For example, a first adjustable base structure 124a is configured to be fastened to a first individual support structure 1204a via a first fastening structure 1104a, a second adjustable base structure 124b is configured to be fastened to a second individual support structure 1204b via a second fastening structure 1104b, and so on.

[0086] Furthermore, as shown in the cross-sectional view 1200 of Figure 12, in some embodiments, a plurality of second alignment indicators 1206 may be disposed in / on the support structure 1202. In further embodiments, the plurality of second alignment indicators 1206 may be disposed on a plurality of individual support structures 1204 respectively. For example, a fourth alignment indicator 1206a is disposed on a first individual support structure 1204a, a fifth alignment indicator 1206b is disposed on a second individual support structure 1204b, and so on. In some embodiments, the plurality of second alignment indicators 1206 may be structures disposed in a plurality of individual support structures 1204 (e.g., indicator structures embossed in individual support structures (e.g., arrows, indentations, lines, grooves, etc.)). In other embodiments, the plurality of second alignment indicators 1206 may be structures disposed on a plurality of individual support structures 1204 (e.g., indicator structures protruding from the support structure 1204, e.g., indicator structures protruding from (or disposed on the surface of) the respective support structures (e.g., arrows, protrusions, lines, grooves, etc.).

[0087] The adjustable base structure 124 can be aligned in a predefined manner using a plurality of first alignment indicators 1102 and a plurality of second alignment indicators 1206 (e.g., by the user). For example, by aligning the plurality of first alignment indicators 1102 and the plurality of second alignment indicators 1206 respectively, the adjustable base structure 124 is aligned such that the sub-slot structure is properly aligned along the radial plane corresponding to the sub-slot structure. Although the cross-sectional view 1200 of Figure 12 illustrates a plurality of second alignment indicators 1206 disposed in the support structure 1202, it should be understood that in other embodiments, the plurality of second alignment indicators 1206 may be disposed on / in a suction cup base (e.g., in some embodiments, the mounting structure is a suction cup base 117).

[0088] The embodiments described herein provide a method for forming a tunneling oxide layer, i.e., a metal oxide layer, such as aluminum oxide (AlO), magnesium oxide (MgO), strontium oxide (SrO), iron oxide (Fe2O3), nickel oxide (NiO), cobalt oxide (CoO), manganese oxide (MnO2), or other suitable oxide layers as a barrier layer. For example, such an oxide layer can be formed as part of a magnetoresistive random-access memory (MRAM), such as a magnetic tunneling junction (MTJ). To form the oxide layer using process tool 100, the process tool is designed to introduce oxygen into the wafer or workpiece.

[0089] Returning to Figure 1A, the process tool 100 further includes a shutter tube 130 configured to allow gas 132 to flow into the chamber housing 102. For example, in some embodiments, it may be necessary to deposit or form a layer of metal oxide. In such embodiments, the shutter tube 130 may introduce oxygen 132 into the chamber housing 102.

[0090] Figure 13 is a bottom view of the shutter tube 130 inside the chamber housing 102. As shown, the shutter tube 130 includes a plurality of openings 131 through which gas 132 can be guided into the chamber housing 102, and more specifically toward the wafer 104. The openings 131 may be spaced apart from each other along the length of the shutter tube 130.

[0091] Figure 13 illustrates the shutter tube 130 in the initial position 130a. Embodiments of this disclosure provide the ability to laterally move the shutter tube along the direction of arrow 1301 to a second position 130b and / or along the direction of arrow 1302 to a third position 130c, or to a position between the second position 130b and the third position 130c. In some embodiments, the initial position 130a is at most 25 mm away from the second position 130b. Furthermore, in some embodiments, the initial position 130a is at most 25 mm away from the third position 130c.

[0092] In some embodiments, the position and flow rate of the shutter 130 are controlled to form an oxide layer with a uniform thickness. For example, the shutter 130 can be controlled to adjust the ratio of the oxygen percentage in the wafer edge region to the oxygen percentage in the wafer center region. Therefore, the formation rate of the oxide layer in the edge region and the center region can be controlled mutually.

[0093] The process tool 100 may be equipped with a proportional-integral-derivative (PID) controller or a control module 140. The control module 140 may be part of or contain the controller 708.

[0094] Module 140 may be located inside and / or outside the chamber housing 102. As described in this disclosure, the term "module" refers to any hardware, software, firmware, electronic control unit or component, processing logic, and / or processor device, individually or in any combination, including but not limited to: application-specific integrated circuit (ASIC), electronic circuitry, processors (shared, dedicated, or grouped) and memory executing one or more software or firmware programs, other combinational logic circuitry, and / or suitable elements providing said functionality. Embodiments of this disclosure may be described herein from the perspective of functional and / or logical block elements and various processing steps. It should be understood that such block elements may be implemented by any number of hardware, software, and / or firmware elements configured to perform specified functions. For example, embodiments of this disclosure may utilize various integrated circuit elements, such as memory elements, digital signal processing elements, logic elements, lookup tables, etc., and may perform various functions under control by one or more microprocessors or other control devices. For the sake of brevity, this disclosure may not describe in detail the conventional techniques related to signal processing, data transmission, signaling, control, and other functional aspects of the system (and the various operating components of the system).

[0095] The control module 140 can monitor, detect, record, and / or analyze electrostatic accumulation, which can cause problems during the deposition process. For example, electrostatic charges can accumulate on wafers during processing, especially in a vacuum environment. This can lead to non-uniform electric fields, affecting the uniformity and quality of the deposition. Electrostatic charges can cause film defects, such as pinholes or uneven thickness, which may degrade the performance of the deposited layer. Furthermore, the unwanted electric fields generated by electrostatic charges may interfere with the transport of ions or atoms during the deposition process, potentially affecting the deposition rate and film properties.

[0096] The control module 140 can also detect, record, and / or analyze second harmonics. During the deposition process, the deposited layer may exhibit an electric field-induced second harmonic generation effect.

[0097] Module 140 can control the position of shutter tube 130 and / or the oxygen flow rate from shutter tube 130 to change process conditions to adjust the generation of second harmonics and / or other conditions that may affect the uniformity of second harmonics. In addition to controlling shutter tube 130, module 140 can also control adjustable wafer chuck 116.

[0098] The shape of the wafer chuck 116 affects the thickness of the deposited layer during the deposition process. For example, the geometry of the chuck affects the uniformity of electrostatic force distribution on the substrate. A well-designed shape can generate a more uniform electric field, which helps to hold the substrate evenly and ensure consistent deposition on the substrate surface.

[0099] The shape of the wafer chuck 116 affects the positioning distance of the substrate relative to the deposition material source. Variations in height or profile affect the angle of incidence of the material, which in turn leads to differences in thickness.

[0100] The design of the wafer chuck 116 may affect the flow of process gases (e.g., inert or reactive gases) above the substrate. A shape that facilitates better gas distribution helps maintain uniform deposition conditions, which in turn helps maintain a consistent layer thickness.

[0101] The shape of the wafer chuck 116 also affects the thermal contact between the substrate and the chuck. Since temperature variations affect the deposition rate and thus the layer thickness, effective thermal management is crucial.

[0102] Depending on the shape and size of the wafer chuck 116, edge effects may occur, leading to uneven deposition near the substrate edges. This is especially important for large-area coatings.

[0103] Therefore, changing the shape of the wafer chuck 116 can affect electrostatic accumulation and the deposition process.

[0104] Please refer to Figure 14, which is a top view and cross-sectional view of an adjustable wafer chuck according to a specific embodiment of the present disclosure. As shown, the contact pads 126 in the central regions 1401 and 1402 of the wafer chuck 116 are located at an initial height 1411. Furthermore, the contact pads 126 at the edge region 1403 of the wafer chuck 116 are lowered to a second height 1412 along the direction of arrow 1433. As shown, a distance 1413 is defined between height 1411 and height 1412. In some embodiments, the distance 1413 is positive or negative five (5) mm, that is, the contact pads 126 can be raised or lowered by a maximum of five (5) mm. The height of the contact pads 126 can be adjusted as described above.

[0105] As shown in the figure, the central region 1401 of the contact pad 126 has a width or diameter 1421. Furthermore, the central region 1402 of the contact pad 126 has a width or annular radius 1422.

[0106] The width 1421 of the central region 1401 is twice the third thickness 208. For example, the width 1421 can be between 2 millimeters (mm) and 300 mm, including all values ​​and ranges within that range, such as between 50 mm and 70 mm, for example, 60 mm.

[0107] In the illustrated embodiment, the central region 1402 includes four contact pads 126, while the edge region 1403 includes three contact pads 126. However, other arrangements are also contemplated, where each region may include more or fewer contact pads 126. Each contact pad 126 in the central region 1402 and the edge region 1403 has a thickness 204 or thickness 206 between 1 mm and 150 mm, including all values ​​and ranges within this range, such as between 25 mm and 35 mm, for example, 30 mm (+ / - 5 mm).

[0108] Therefore, the central region 1402 shown can have a width 1422 between 4 mm and 600 mm, including all values ​​and ranges within that range, such as between 100 mm and 140 mm, for example, 120 mm. Furthermore, the edge region 1403 shown can have a width 1423 between 3 mm and 450 mm, including all values ​​and ranges within that range, such as between 75 mm and 105 mm, for example, 90 mm.

[0109] In some embodiments, thickness 206 is equal to thickness 204. In some embodiments, thickness 206 is greater than thickness 204. The ratio of thickness 206 to thickness 204 is between 1:1 and 1:150, including all values ​​and ranges within this range.

[0110] In some embodiments, thickness 206 is equal to thickness 208. In some embodiments, thickness 206 is greater than thickness 208. The ratio of thickness 206 to thickness 208 is between 1:1 and 1:150, including all values ​​and ranges within this range.

[0111] The positions of the contact pad 126 and the wafer chuck 116 can control the oxygen concentration in the cavity near the wafer. Therefore, the process conditions can be changed by adjusting the height of the contact pad 126 to regulate the generation of second harmonics and / or other conditions that affect the uniformity of the deposited film.

[0112] Figure 15 is a schematic diagram of a portion of a semiconductor structure 1500 formed according to a specific embodiment of the present disclosure. As shown, a gate structure 1510 is formed above a substrate 1505. Additionally, a metal interconnect structure 1520 is formed above the gate structure 1510.

[0113] Figure 16 provides a focused view of portion 1530 of the semiconductor structure 1500 shown in Figure 15. As shown in Figure 16, portion 1530 includes a lower metal layer 1610 and an upper metal layer 1620.

[0114] Figure 17 illustrates the MTJ film stack 1700. As shown, the MTJ film stack 1700 includes a seed layer 1710. The seed layer 1710 may be tantalum nitride (TaN), iron boride (FeB), and / or nickel chromium (NiCr).

[0115] A lead layer 1720 is formed above the seed layer 1710. The lead layer 1720 may include nickel (Ni), cobalt (Co), ruthenium (Ru), iridium (Ir), cobalt iron boron (CoFeB), and / or iron (Fe) layers, for example forming a second anti-parallel (AP) layer (AP2) 1721, a spacer layer 1722, and a first anti-parallel (AP) layer (AP1) 1723.

[0116] A barrier layer 1750 is formed around the lead layer 1720. The barrier layer 1750 may be a metal and / or a metal oxide, for example, formed through the embodiment of the process tool 100 described above.

[0117] As shown in the figure, a free layer 1760 is formed above the barrier layer 1750. The free layer 1760 may include iron boride (FeB), molybdenum (Mo), chromium (Cr), and / or tungsten (W).

[0118] A capping layer 1770 is formed over the free layer 1760. The capping layer 1770 may be a metal and / or a metal oxide, for example, formed through the embodiment of the process tool 100 described above.

[0119] As shown in the figure, a buffer layer or hard masking layer 1780 is formed above the cover layer 1770. The buffer layer 1780 may include molybdenum (Mo), iridium (Ir), ruthenium (Ru), and / or cobalt-iron-boron (CoFeB).

[0120] To optimize the performance of MTJ film stacks 1700, multilayer 1750 and 1770 films can be uniformly deposited to form a crystalline structure instead of an amorphous structure. Therefore, magnetoresistance (MR) performance is improved.

[0121] Therefore, the embodiments disclosed herein form metal oxide layers (e.g., multilayers of 1750 and 1770) with improved uniformity to improve the magnetoresistive (MR) performance of the MTJ. For example, by improving the uniformity of the metal oxide layer, tunneling effect and electric motor spin detection can be improved. Furthermore, by improving the uniformity of the metal oxide layer, the work function of the MTJ film stack can be improved.

[0122] In some embodiments, the multilayer 1750 or 1770 can be formed as a multilayer film structure, wherein the metal oxides of the multilayers of the multilayer film structure have a high oxide percentage, and the other multilayers of the multilayer film structure have a low oxide percentage. The percentage of oxides formed in the metal oxide sublayers can be precisely controlled by controlling the shutter 130 and the adjustable wafer chuck 116.

[0123] Figure 18 illustrates a flowchart 1800 of a method for forming a uniform metal oxide layer (e.g., in an MTJ film stack) according to an embodiment of the present disclosure. As shown, method 1800 includes step S1802, placing a semiconductor structure (e.g., wafer 104) on a wafer chuck (e.g., adjustable wafer chuck 116). The adjustable wafer chuck may include an adjustable base structure and contact pads 126 disposed on the adjustable base structure. The semiconductor wafer is placed on the adjustable wafer chuck such that the contact pads are positioned between the semiconductor wafer and the adjustable base structure.

[0124] Method 1800 includes step S1804, initiating a metal deposition process. For example, operating power supply 114 and target 112 to deposit a layer of metal, such as magnesium (Mg), aluminum (Al), strontium (Sr), iron (Fe), nickel (Ni), cobalt (Co), manganese (Mn), titanium (Ti), copper (Cu), tantalum (Ta), and some other suitable metals.

[0125] Then, method 1800 includes performing a metal oxide deposition process in step S1806. For example, oxygen is introduced into the interior of the chamber housing 102 through the shutter tube 130.

[0126] In step S1808, method 1800 includes controlling the oxidation conditions within the outer shell 102 of the cavity to form a metal oxide layer or sublayer with a precisely controlled oxide concentration. For example, control module 140 may monitor the conditions and / or the deposited layer. For example, control module 140 may monitor the oxygen concentration and / or the thickness of the deposited layer at the wafer.

[0127] The control module 140 can determine whether the oxygen flow rate should be increased or decreased in the central region of the wafer, and whether the oxygen flow rate should be increased or decreased in the edge region of the wafer.

[0128] In response to the decision made by control module 140 in step S1808, control module 140 can control the height of the contact pad in step S1810. Furthermore, control module 140 can control the shutter tube position and oxygen flow rate in step S1812. Therefore, control module 140 can achieve the desired oxygen concentration in the atmosphere at and around the wafer to deposit a metal oxide with the desired oxide concentration.

[0129] In some embodiments, the edge region of the contact pad is controlled, i.e. raised or lowered, to change the oxidation of the wafer edge, and the shutter is controlled to change the oxidation rate of the wafer center.

[0130] In some embodiments, the oxygen flow rate is controlled at 1.7 to 1.9 standard cubic centimeters per minute (sccm).

[0131] When the desired thickness of the deposited oxide layer is obtained (which can be determined by the control module 140), the deposition process ends in step S1814.

[0132] After forming the deposited layer, method 1800 includes step S1816, checking the uniformity of the deposited film thickness. In the embodiments disclosed herein, the use of control module 140, shutter tube 130, and adjustable wafer chuck 116 enables method 1800 to form a deposited layer with a thickness uniformity of ±10% or ±5%. For example, a 1-nanometer-thick deposited layer may have a thickness uniformity of 1 angstrom (0.1 nanometers), meaning that for a 1-nanometer-thick deposited layer, the difference between the minimum and maximum deposited thickness does not exceed 0.1 nanometers; for example, a 1-nm-thick layer has a thickness not exceeding 0.05 nm.

[0133] In one embodiment, a method includes receiving a workpiece in a deposition apparatus, wherein the deposition apparatus includes a chamber and a plurality of electrostatic chucks disposed in the chamber to accommodate the workpiece; injecting oxygen into the chamber through a shutter tube; monitoring electrostatic accumulation on the workpiece; and adjusting the electrostatic accumulation, wherein adjusting the electrostatic accumulation includes adjusting the height of the electrostatic chucks to form a deposition layer having a selected thickness uniformity.

[0134] In some embodiments of the method, monitoring electrostatic buildup on the workpiece includes operating proportional-integral-derivative control.

[0135] In some embodiments of the method, the operation of proportional-integral-derivative control also includes adjusting the oxygen flow rate.

[0136] In some embodiments of the method, the oxygen flow rate is 1.7 to 1.9 standard cubic centimeters per minute (sccm).

[0137] In some embodiments of the method, adjusting the height of the electrostatic chuck includes moving at least one of the electrostatic chucks from an initial height relative to the chamber to a second height relative to the chamber, wherein the initial height and the second height are at most 5 mm apart.

[0138] In some embodiments of the method, the shutter tube is located at an initial position relative to the workpiece, and adjusting electrostatic buildup further includes moving the shutter tube to a second position relative to the workpiece to form selective thickness uniformity.

[0139] In some embodiments of the method, the initial position is at most 25 mm away from the second position.

[0140] In some embodiments of the method, the workpiece includes a partially fabricated magnetic tunneling junction (MTJ) film stack, the MTJ film stack including a lead layer, wherein a deposited layer is formed on the lead layer, and wherein the deposited layer is a barrier layer consisting of aluminum oxide (AlO), magnesium oxide (MgO), strontium oxide (SrO), iron oxide (Fe2O3), nickel oxide (NiO), cobalt oxide (CoO), or manganese oxide (MnO2).

[0141] In some embodiments of the method, the workpiece includes a partially fabricated magnetic tunneling junction (MTJ) film stack comprising a free layer composed of iron boride (FeB), molybdenum (Mo), chromium (Cr), and / or tungsten (W), wherein a deposited layer is formed on the free layer, and wherein the deposited layer is a capping layer composed of aluminum oxide (AlO), magnesium oxide (MgO), strontium oxide (SrO), iron oxide (Fe2O3), nickel oxide (NiO), cobalt oxide (CoO), or manganese oxide (MnO2).

[0142] In another embodiment, a system is provided for depositing a layer over a workpiece. The system includes a chamber housing; an adjustable wafer chuck configured to receive the workpiece, wherein the adjustable wafer chuck includes a plurality of electrostatic chucks; a shutter tube configured to allow oxygen to flow within the chamber housing; and a controller configured to monitor electrostatic buildup over the workpiece, wherein the controller is configured to adjust the height of the electrostatic chucks to form a deposited layer with a selected thickness uniformity.

[0143] In some embodiments of the system, the controller is configured to regulate the flow rate of oxygen from the shutter tube.

[0144] In some embodiments of the system, the controller is configured to move the shutter tube laterally to adjust the formation of the deposited layer.

[0145] In some embodiments of the system, the shutter tube can be adjusted laterally by up to 25 mm.

[0146] In some embodiments of this system, the controller is a proportional-integral-derivative controller.

[0147] In some embodiments of the system, the height of the electrostatic chuck can be adjusted by a maximum of 5 millimeters.

[0148] In another embodiment, the semiconductor structure includes a bottom of the semiconductor structure; a metal oxide layer located at the bottom of the semiconductor structure, wherein the metal oxide layer has a minimum thickness and a maximum thickness, wherein the difference between the minimum thickness and the maximum thickness is less than 10 percent of the maximum thickness, wherein the metal oxide layer is formed through a physical vapor deposition process, wherein the relative heights of a plurality of portions of the bottom of the semiconductor structure are dynamically adjusted.

[0149] In some embodiments of this semiconductor structure, the bottom of the semiconductor structure is the bottom of a magnetic tunneling junction (MTJ) film stack.

[0150] In some embodiments of this semiconductor structure, the bottom of the semiconductor structure is the bottom of a magnetic tunneling junction (MTJ) film stack, and the metal oxide layer is a barrier layer located on the pin layer.

[0151] In some embodiments of this semiconductor structure, the bottom of the semiconductor structure is the bottom of a magnetic tunneling junction (MTJ) film stack, and the metal oxide layer is a capping layer located on the free layer.

[0152] In some embodiments of this semiconductor structure, the metal oxide layer is composed of aluminum oxide (AlO), magnesium oxide (MgO), strontium oxide (SrO), iron oxide (Fe2O3), nickel oxide (NiO), cobalt oxide (CoO), or manganese oxide (MnO2).

[0153] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand the various embodiments disclosed herein. Those skilled in the art should understand that they can simply use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purpose and / or the same advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that they can make various changes, substitutions, and alterations without departing from the spirit and scope of this disclosure.

[0154] 100: Process Tools 100a, 100b, 200a, 200b, 300, 400, 500, 600, 700a, 700b, 800, 900, 1000, 1100, 1200: Figure 102: Chamber outer shell 104: Wafer 106: First Magnet 108: Second Magnet 110: Third magnet 112: Target Material 114: Power Supply 116: Wafer Chuck 117: Suction Cup Base 118: ESC circuit 120: Pad 122: Base 124, 124a, 124b, 124c, 124d, 124i: Base structure / base structure 126, 126a, 126b, 126i, 1261, 1262, 1263, 1002, 1002a, 1002b: Contact pads 130: Shutter tube 130a, 130b, 130c: Position 131: Opening 132: Gas / Oxygen 140: Module 202, 202a, 202b: Gap 204, 206, 208: Thickness 210, 502, 504, 506, 508, 1411, 1412: Altitude 212: Width 214, 214a, 214b: Base structure 302: First Floor 304, 304a, 304b, 304c, 304d: Actuators 305: First Direction 306: Extended Structure 307: Second Direction 308: Shell Structure 402: Second Floor 702: System 704, 704a, 704b, 704c, 704d: Sensors 706, 706a, 706b, 706c, 706d: Power supply 708: Controller 710, 710a, 710b, 710c, 710d: Clamping electrodes 802, 802a, 802b: Slots 1102, 1102a, 1102b, 1102c, 1206, 1206a, 1206b: Alignment Indicators 1104, 1104a, 1104b: Fastening structure 1202, 1204, 1204a, 1204b: Supporting structures 1301, 1302, 1433: Arrows 1401, 1402: Central Area 1403: Edge region 1413: Distance 1422: Width / Circle Radius 1423: Width 1421: Width / Diameter 1500: Semiconductor Structure 1505:Substrate 1510: Gate structure 1520: Metal interconnect structure 1530: Part 1610: Lower metal layer 1620: Upper metal layer 1700: MTJ membrane stacking 1710: Seed layer 1720: Pin Layer 1721, 1723: Anti-parallel layers 1722: Spacer Layer 1750: Barrier layer / layer 1760: Free Layer 1770: Covering layer / layer 1780: Buffer layer / mask layer 1800: Flowchart / Method S1802, S1804, S1806, S1808, S1810, S1812, S1814, S1816: Steps x, y: plane

[0155] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A method for forming a semiconductor structure, comprising: A workpiece is received in a deposition apparatus, wherein the deposition apparatus includes a chamber and a plurality of electrostatic chucks disposed in the chamber to accommodate the workpiece; oxygen is injected into the chamber through a shutter tube; an electrostatic buildup on the workpiece is monitored; and the electrostatic buildup is adjusted, wherein adjusting the electrostatic buildup includes adjusting the heights of a plurality of the electrostatic chucks to form a deposition layer having a selected thickness uniformity.

2. The method as described in claim 1, wherein adjusting the heights of the electrostatic chucks comprises moving one of the electrostatic chucks from an initial height relative to the chamber to a second height relative to the chamber, wherein the distance between the initial height and the second height is at most 5 mm.

3. The method as described in claim 1, wherein the shutter tube is located at an initial position relative to the workpiece, and wherein adjusting the electrostatic buildup further includes moving the shutter tube to a second position relative to the workpiece to form the deposited layer having the selected thickness uniformity.

4. The method as described in claim 3, wherein the distance between the initial position and the second position is at most 25 mm.

5. A system for forming a semiconductor structure, the system comprising: A chamber shell; An adjustable wafer chuck is configured to receive a workpiece, wherein the adjustable wafer chuck includes a plurality of electrostatic chucks. A shutter tube configured to allow oxygen to flow within the chamber housing; and a controller configured to monitor an electrostatic buildup above the workpiece, wherein the controller is configured to adjust a plurality of heights of the electrostatic chucks to form a deposition layer having a selected thickness uniformity.

6. The system as described in claim 5, wherein the controller is configured to adjust a flow rate of the oxygen from the shutter tube.

7. The system as described in claim 5, wherein the height of the electrostatic chucks can be adjusted by a maximum of 5 mm.

8. A semiconductor structure, comprising: The bottom of the semiconductor structure; And a metal oxide layer located at the bottom of the semiconductor structure, wherein the metal oxide layer has a minimum thickness and a maximum thickness, wherein the difference between the minimum thickness and the maximum thickness is less than 10 percent of the maximum thickness, wherein the metal oxide layer is formed by a physical vapor deposition process, wherein a plurality of relative heights of a plurality of portions of the bottom of the semiconductor structure are dynamically adjusted.

9. The semiconductor structure as claimed in claim 8, wherein the bottom of the semiconductor structure is a bottom of a magnetic tunneling junction stack, and wherein the metal oxide layer is a barrier layer located on a pin layer.

10. The semiconductor structure as claimed in claim 8, wherein the bottom of the semiconductor structure is a bottom of a magnetic tunneling junction film stack, and wherein the metal oxide layer is a capping layer located on a free layer.

Images