Substrate processing device

Abstract

[Problem] To improve the dimensional stability of photoresist patterns using photoresist containing metal photoresist. [Solution] A substrate processing apparatus comprising: a film forming unit for forming a film containing metal photoresist on a substrate; a heat treatment unit for heat treating the substrate having the aforementioned film formed thereon and subjecting the film to exposure treatment; a developing unit for developing the aforementioned film on the heat-treated substrate; and an adjustment control unit for reducing the difference in water content reacted by each substrate during heat treatment within the aforementioned film formed on the substrate.

Description

Substrate processing device This disclosure relates to a substrate processing apparatus. Patent Document 1 discloses a substrate processing apparatus that uses chemically amplified photoresist to form photoresist patterns. In this apparatus, a control unit keeps the substrate in a standby unit so that the time from the end of exposure by the exposure apparatus until the start of post-exposure baking by the post-exposure baking unit is fixed for each substrate. [Prior Art Documents][Patent Documents] [Patent Document 1] Japanese Patent Application Publication No. 2008-130857 [Problem to be Solved by the Invention] Sometimes, metal-containing photoresist is used instead of chemically amplified photoresist. This disclosure provides a substrate processing apparatus, substrate processing method, and memory medium that effectively improve the dimensional stability of photoresist patterns using metal-containing photoresist. [Means for Solving the Problem] The substrate processing apparatus comprises: a film forming unit for forming a film containing metal photoresist on a substrate; a heat treatment unit for heating the substrate, on which the film has been formed and then exposed to light; a developing unit for developing the film on the heat-treated substrate; and an adjustment control unit for reducing the difference in water content between each substrate during heat treatment within the film formed on the substrate. [Effects of the Invention] According to this disclosure, a substrate processing apparatus, a substrate processing method, and a memory medium are provided that are effective in improving the dimensional stability of photoresist patterns using photoresist containing metal photoresist. The following describes various exemplary embodiments. In the description, the same symbol is used to mark the same element or elements with the same function, and repeated descriptions are omitted. [First Embodiment] First, referring to Figures 1 to 7, the substrate processing system of the first embodiment will be described. [Substrate Processing System] Substrate processing system 1 is a system for forming a photosensitive film on a substrate, exposing the photosensitive film, and developing the photosensitive film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a photoresist film. Substrate processing system 1 includes: a coating and developing apparatus 2; and an exposure apparatus 3. Exposure apparatus 3 is an apparatus for exposing the photoresist film (photosensitive film) formed on the wafer W (substrate). The internal space of exposure apparatus 3 is, for example, maintained in a substantial vacuum state. Specifically, exposure apparatus 3 irradiates the exposed portion of the photoresist film with energy lines by methods such as immersion exposure. Coating and developing apparatus 2 performs a process of coating photoresist (solution) onto the surface of wafer W (substrate) to form a photoresist film before the exposure process performed by exposure apparatus 3, and performs a developing process on the photoresist film after the exposure process. The substrate processing system 1 uses a photoresist containing metal (hereinafter referred to as "metal-containing photoresist") to form a film containing metal photoresist. For example, the substrate processing system 1 may also use a photoresist containing metal oxide to form the aforementioned film. [Substrate Processing Apparatus] Hereinafter, as an example of a substrate processing apparatus, the configuration of the coating and developing apparatus 2 will be described. As shown in Figures 1 and 2, the coating and developing apparatus 2 includes: a carrier block 4; a processing block 5; an interface block 6; a humidity control mechanism 7; and a control device 100 (adjustment control unit). Carrier block 4 is used for guiding wafer W into and out of coating and developing apparatus 2. For example, carrier block 4 may consist of multiple carriers C supporting wafer W and may contain a transport device A1 including receiving arms. Carrier C may, for example, hold multiple circular wafers W. Transport device A1 removes wafer W from carrier C and transfers it to processing block 5, and receives wafer W from processing block 5 and returns it to carrier C. Processing block 5 has multiple processing modules 11, 12, 13, and 14. Processing module 11 includes a coating unit U1, a heat treatment unit U2, and a conveying device A3 for transporting wafer W. Processing module 11 forms a lower layer film on the surface of wafer W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats the wafer W with a processing solution for forming the lower layer film. The heat treatment unit U2 performs various heat treatments associated with the formation of the lower layer film. Processing module 12 (film formation unit) includes: a coating unit U3; a heat treatment unit U4; and a conveying device A3, which transports wafer W. Processing module 12 forms a film containing metal photoresist on a lower layer film using the coating unit U3 and the heat treatment unit U4. The coating unit U3 coats the metal photoresist, which is a processing solution used for film formation, onto the lower layer film. The heat treatment unit U4 performs various heat treatments accompanying the film formation. thereby, a film containing metal photoresist is formed on the surface of wafer W. Processing module 13 includes: a coating unit U5; a heat treatment unit U6; and a conveying device A3, which transports the wafer W. Processing module 13 forms an upper layer film on the photoresist film using the coating unit U5 and the heat treatment unit U6. The coating unit U5 coats the photoresist film with a liquid for upper layer film formation. The heat treatment unit U6 performs various heat treatments accompanying the formation of the upper layer film. Processing module 14 includes: an imaging unit U7 (imaging processing section); a heat treatment unit U8 (heat treatment section); and a transport device A3, which transports wafer W. Processing module 14 performs imaging processing on the exposed film and heating processing accompanying the imaging processing using the imaging unit U7 and the heat treatment unit U8. This forms a photoresist pattern using metal photoresist on the surface of wafer W. The imaging unit U7 performs imaging processing on the metal photoresist film by applying developer to the exposed surface of wafer W and then rinsing it off with a rinsing solution. The heat treatment unit U8 performs various heat treatments accompanying the imaging processing. Specific examples of heat treatment include post-exposure bake (PEB) and post-bake (PB). The imaging unit U7 performs imaging processing on the wafer W that has undergone heat treatment (PEB) by the thermal processing unit U8. Hereinafter, unless otherwise specified, the heat treatment in the thermal processing unit U8 will be described as "heat treatment (PEB) before imaging processing". Furthermore, the film containing metal photoresist will only be described as a "film". Within processing block 5, on the side of carrier block 4, a shelving unit U10 is provided. The shelving unit U10 is divided into a plurality of compartments arranged vertically. Near the shelving unit U10, a conveying device A7, including a lifting arm, is provided. The conveying device A7 causes the wafer W to move up and down between the compartments of the shelving unit U10. On the side of interface block 6 within processing block 5, a shelving unit U11 is provided. The shelving unit U11 is divided into a plurality of cells arranged in the vertical direction. Interface block 6 is responsible for receiving and transferring wafer W between itself and exposure apparatus 3. For example, interface block 6 has a built-in transport device A8 containing a receiving and transferring arm, and is connected to exposure apparatus 3. Transport device A8 transfers wafer W, which is positioned in shelf unit U11, to exposure apparatus 3 via humidity control mechanism 7. Transport device A8 receives wafer W from exposure apparatus 3 and returns it to shelf unit U11 via humidity control mechanism 7. The humidity control mechanism 7 is configured to adjust the water content (hereinafter referred to as "moisture content") of the coating formed on the surface of the wafer W. Adjusting the moisture content of the coating includes at least one of increasing the moisture content, decreasing the moisture content, and suppressing changes in the moisture content. For example, the humidity control mechanism 7 is disposed within the interface block 6. The humidity control mechanism 7 includes: a substrate housing unit 20 (substrate housing section); and a dehydration unit 30 (dehydration section). The substrate housing unit 20 is configured to house a plurality of wafers W and suppress changes in the moisture content of the coating in the housed wafers W. The dehydration unit 30 is configured to house one or more wafers W and reduce the moisture content of the coating in the housed wafers W. An example of these configurations is described below. The control device 100 controls the coating and developing apparatus 2 by performing the coating and developing process, for example, by the following procedure. First, the control device 100 controls the transport device A1 to transport the wafer W in the carrier C to the rack unit U10, and controls the transport device A7 to place the wafer W in the compartment for the processing module 11. Next, the control device 100 controls the conveying device A3 to transport the wafer W from the rack unit U10 to the coating unit U1 and the heat treatment unit U2 within the processing module 11. Furthermore, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a lower layer film on the surface of the wafer W. Subsequently, the control device 100 controls the conveying device A3 to return the wafer W with the lower layer film formed to the rack unit U10, and controls the conveying device A7 to place the wafer W in the compartment for use in the processing module 12. Next, the control device 100 controls the conveying device A3 to transport the wafer W from the rack unit U10 to the coating unit U3 and the heat treatment unit U4 within the processing module 12. Furthermore, the control device 100 controls the coating unit U3 and the heat treatment unit U4 to form a film containing metal photoresist on the lower layer of the wafer W. Subsequently, the control device 100 controls the conveying device A3 to return the wafer W to the rack unit U10, and controls the conveying device A7 to place the wafer W in the compartment of the processing module 13. Next, the control device 100 controls the conveying device A3 to transport the wafer W from the rack unit U10 to each unit within the processing module 13. Furthermore, the control device 100 controls the coating unit U5 and the heat treatment unit U6 to form an upper film on the coating layer of the wafer W. Subsequently, the control device 100 controls the conveying device A3 to transport the wafer W to the rack unit U11. Next, the control device 100 controls the transport device A8 to move the wafer W from the shelf unit U11 into the substrate receiving unit 20 and to send the wafer W contained in the substrate receiving unit 20 to the exposure apparatus 3. Then, the control device 100 controls the transport device A8 to receive the exposed wafer W from the exposure apparatus 3 and move it into the dehydration unit 30. Furthermore, the control device 100 controls the transport device A8 to arrange the wafer W in the dehydration unit 30 into the compartment of the processing module 14 in the shelf unit U11. Next, the control device 100 controls the transport device A3 to transport the wafer W from the rack unit U11 to the heat treatment unit U8 within the processing module 14. Furthermore, the control device 100 controls the heat treatment unit U8 to apply heat treatment to the coating of the wafer W. Next, the control device 100 controls the development unit U7 and the heat treatment unit U8 to apply development processing and post-development heat treatment to the coating of the wafer W that has undergone heat treatment in the heat treatment unit U8. Afterwards, the control device 100 controls the transport device A3 to return the wafer W to the rack unit U10, and controls the transport device A7 and the transport device A1 to return the wafer W to the carrier C. Through the above, the coating and development process is completed. Furthermore, the specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus may be any unit that includes a film-forming unit for forming a film containing metal photoresist, a heat treatment unit for heating the film after exposure, a developing unit for developing the film, and a control device for controlling these components. The units of the humidity control mechanism 7 may also be located within the carrier block 4 or the processing modules 11, 12, 13, and 14. (Humidity Control Mechanism) Next, the configuration of each unit of the humidity control mechanism 7 will be explained. As described above, the substrate receiving unit 20 shown in FIG3(a) receives a plurality of wafers W and suppresses changes in the moisture content within the coating of the received wafers W. Since the substrate receiving unit 20 can receive a plurality of wafers W, it functions as a buffer to keep the wafers W in standby mode until the wafers W are delivered to the exposure apparatus 3. In addition, the substrate receiving unit 20 may also be disposed between the interface block 6 and the exposure apparatus 3. The change in moisture content within the substrate housing unit 20 is more suppressed compared to the transport space (e.g., the movable space of transport devices A3 and A8) in the coating and developing apparatus 2. The increase or decrease in moisture content per unit time of the wafer W housed in the substrate housing unit 20 is smaller than that of a wafer W retained in either the transport space or the exposure apparatus 3. Even when the moisture content of a wafer W retained in the transport space increases, the increase in moisture content per unit time of the wafer W housed in the substrate housing unit 20 is smaller than that of the wafer W in the transport space. When the exposure apparatus 3 is maintained in a substantial vacuum state, the moisture content of the coating on the wafer W decreases when it is retained in the exposure apparatus 3. In this case, the decrease in moisture content per unit time of the wafer W housed in the substrate housing unit 20 is smaller than that of the wafer W in the exposure apparatus 3. For example, the substrate housing unit 20 includes: a housing 21; a plurality of housing racks 22; and a supply path 23. The housing 21 is configured to isolate an external space (transfer space) from an internal space. For example, the housing 21 is a box having an internal space. At least a portion of the housing 21 may also form an opening for the entry and exit of the wafer W. The housing 21 may also be configured to suppress the entry and exit of gas through the opening by means of an air curtain. The housing 21 houses the plurality of housing racks 22, and a supply path 23 is connected to one end of the housing 21. The plurality of housing racks 22 respectively hold a plurality of wafers W. The supply path 23 supplies air into the space inside the housing 21, such as suppressing changes in moisture content. For example, a device for generating low-humidity dry air is connected to one end of the supply path 23, and the supply path 23 may also supply low-humidity dry air into the housing 21. The dry air supplied through supply path 23 has a humidity level that suppresses changes in the moisture content of the wafer W housed in substrate housing unit 20. For example, the humidity of the dry air supplied through supply path 23 is lower than the humidity in the transport space but higher than the humidity in the exposure apparatus 3. The dehydration unit 30 shown in Figure 3(b) houses one or more wafers W and reduces the water content of the coating on the wafers W. For example, the dehydration unit 30 includes: a housing 31; a support plate 32; and a connecting pipe 33. The housing 31 is a box that isolates the external space (transfer space) from the internal space. The support plate 32 is a plate-shaped component that supports the wafers W to be dehydrated. The connecting pipe 33 is connected to one end of the housing 31, and a vacuum device (not shown) is connected to the opposite end of the connecting pipe 33 on the housing 31. This causes a vacuum to be drawn into the space inside the housing 31, maintaining a substantial vacuum state within the dehydration unit 30 (internal space). Because the internal space inside the housing 31 is maintained in a substantial vacuum state, the water content of the coating on the wafers W housed in the dehydration unit 30 is reduced. (Control Device) Returning to Figure 2, the control device 100 controls the various elements included in the coating and developing apparatus 2. The control device 100 is configured to perform the following: control the processing module 12 in a manner that forms a film containing metal photoresist on the wafer W; control the heat treatment unit U8 in a manner that heats the wafer W, on which the film has been formed and exposed; control the developing unit U7 in a manner that develops the film on the heated wafer W; and reduce the difference in the water content (hereinafter referred to as "reaction water content") of each wafer W during the heat treatment within the film formed on the wafer W. The control device 100 may also be configured to perform the following: to reduce the difference in the reactive water content of each wafer W, thereby reducing the difference in the water content contained in the metal-containing photoresist at the start of the heat treatment performed by the heat treatment unit U8. In the following, the water content contained in the metal-containing photoresist film may be referred to simply as "water content," and the water content at the start of the heat treatment performed by the heat treatment unit U8 may be referred to simply as "water content at the start of the heat treatment." The specific configuration of the control device 100 is illustrated below. As shown in FIG4, the control device 100 has a functional configuration including a transport reference time setting unit 102, a standby time acquisition unit 104, a transport control unit 106, a dwell time calculation unit 108, a dehydration time calculation unit 110, a heat treatment unit control unit 114, and an action command holding unit 116 (hereinafter referred to as a "functional module"). The action command holding unit 116 may also contain a processing schedule, which includes a transport plan for each of the plurality of wafers W. The transport reference time setting unit 102 is configured to set a transport reference time. For example, the transport reference time refers to a constant target value relative to the time spent from the film deposition process performed on one wafer W by the processing module 12 until it is transported into the substrate receiving unit 20 (receiving standby time). The receiving standby time includes the time during which the wafer W is transported while supported by any transport device and the time during which the wafer W is not transported by any transport device. The transport reference time setting unit 102 sets the transport reference time based on the transport plan held by the operation command holding unit 116. The transport reference time setting unit 102 outputs the set transport reference time to the transport control unit 106. The standby time acquisition unit 104 is configured to acquire a predetermined standby time. The predetermined standby time is, for example, a predetermined time for the wafer W to remain in the rack unit U11. The standby time acquisition unit 104 acquires the predetermined standby time of the wafer W in the rack unit U11 based on the transport plan held by the operation command holding unit 116. The standby time acquisition unit 104 outputs the acquired predetermined standby time to the transport control unit 106. The transport control unit 106 controls the transport devices A3 and A8 to transport wafers W. The transport control unit 106 adjusts the storage standby time for each wafer W based on the transport reference time set by the transport reference time setting unit 102 and the predetermined standby time obtained by the standby time acquisition unit 104. For example, the transport control unit 106 calculates the adjustment time based on the transport reference time, the predetermined standby time, and the predetermined transport time. The predetermined transport time refers to, for example, the predetermined time spent transporting the wafer W from the rack unit U11 to the substrate storage unit 20 by the transport device A8. The adjustment time refers to the time taken to reduce the time difference in the storage standby time of each wafer W by summing it to either the predetermined transport time or the predetermined standby time. Specifically, the adjustment time for each wafer W is calculated by subtracting the predetermined standby time and the predetermined transport time from the transport reference time. The transport control unit 106 can also extend the predetermined standby time by the calculated adjustment time, or it can extend the predetermined transport time. The transport control unit 106 controls the transport devices A3 and A8 by transporting each wafer W into the substrate receiving unit 20 during the adjusted receiving standby time. The residence time calculation unit 108 is configured to calculate the residence time of each of the plurality of wafers W in the exposure apparatus 3. The residence time calculation unit 108 outputs the calculated residence time to the transport control unit 106 and the dehydration time calculation unit 110. The dehydration time calculation unit 110 calculates the dehydration time for each wafer W within the dehydration unit 30 based on the residence time calculated by the residence time calculation unit 108 within the exposure apparatus 3. Dehydration time refers to the time the wafer W resides within the dehydration unit 30. The dehydration time calculation unit 110 calculates the dehydration time for each wafer W by recognizing that a longer residence time within the exposure apparatus 3 corresponds to a shorter residence time within the dehydration unit 30. The dehydration time calculation unit 110 outputs the calculated dehydration time to the transport control unit 106. The heat treatment unit control unit 114 controls the pre- and post-development heating processes performed by the heat treatment unit U8. For example, the heat treatment unit control unit 114 controls the heating time of the heating processes in the heat treatment unit U8 based on the processing schedule held by the action command holding unit 116. The control device 100 is composed of one or more control computers. For example, the control device 100 has the circuit 120 shown in FIG. 5. The circuit 120 has: one or more processors 121; memory 122; storage 123; timer 124; and input / output ports 125. The storage 123 is, for example, a hard disk or other memory medium that can be read by a computer. The memory medium stores the program used to enable the control device 100 to execute the board processing program described later. The memory medium may also be a retrievable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 122 temporarily stores the program loaded from the memory medium of the storage 123 and the calculation results generated by the processor 121. The processor 121 executes the above program in cooperation with the memory 122, thereby constituting the various functional modules described above. Input / output port 125 is used to input and output electrical signals between the conveying devices A3 and A8 and the heat treatment unit U8 according to instructions from the processor 121. Timer 124 measures the elapsed time, for example, by counting reference pulses of a fixed period. Furthermore, the hardware configuration of the control device 100 is not necessarily limited to the configuration of functional modules by programming. For example, the functional modules of the control device 100 can also be constructed by dedicated logic circuits or ASICs (Application Specific Integrated Circuits) that integrate such logic circuits. [Substrate Processing Procedure] Next, the substrate processing procedure performed in the coating and developing apparatus 2 will be described as an example of a substrate processing method. This substrate processing procedure includes: forming a film (a film containing metal photoresist) on a wafer W; performing a heat treatment on the wafer W, on which the film has been formed and exposed; and performing a developing process on the film of the heat-treated wafer W. This substrate processing procedure further includes: reducing the difference in water content reacted by each wafer W during the heat treatment performed by the heat treatment unit U8 within the film formed on the wafer W. Hereinafter, an example of an adjustment procedure (hereinafter referred to as the "reaction water content adjustment procedure") will be described, which is performed to reduce the difference in reaction water content of each wafer W during the heat treatment. In this embodiment, the process for adjusting the water content includes: adjusting the water content of each wafer W before the exposure process performed by the exposure apparatus 3; and adjusting the water content of each wafer W after the exposure process performed by the exposure apparatus 3. As an example of adjusting the water content before the exposure process, the control device 100 controls the transport device A8 in a manner that the wafer W with the film formed is moved into the substrate receiving unit 20. Furthermore, the control device 100 controls the transport device A8 in a manner that reduces the time difference between when each wafer W is removed from the processing module 12 and when it is moved into the substrate receiving unit 20. In other words, the control device 100 adjusts the waiting time of each wafer W in the processing module 12 from the time of film formation to the time it is received and stored in the substrate receiving unit 20, thereby adjusting the water content of each wafer W. Figure 6 is a flowchart illustrating the adjustment procedure for the moisture content before exposure processing. In this adjustment procedure, the control device 100 first executes step S11. In step S11, the transport reference time setting unit 102 sets the transport reference time based on the transport plan stored in the operation command holding unit 116. For example, the transport reference time setting unit 102 can also set the transport reference time as "the longest planned time spent by the processing module 12 from the film deposition process of the plurality of wafers W until they are housed in the substrate housing unit 20". Alternatively, the transport reference time setting unit 102 can also set the reference time pre-input by the operator to the operation command holding unit 116 as the transport reference time. The transport reference time setting unit 102 outputs the set transport reference time to the transport control unit 106. Next, the control device 100 executes step S12. In step S12, the standby time acquisition unit 104 acquires a predetermined standby time based on the transport plan stored in the operation command holding unit 116. For example, the standby time acquisition unit 104 acquires from the operation command holding unit 116 the predetermined standby time for the wafer W, the adjustment target included in the transport plan, for the rack unit U11. The transport plan includes a predetermined transport time to the rack unit U11 and a predetermined transport time from the rack unit U11. The standby time acquisition unit 104 calculates the predetermined standby time from the difference between the predetermined transport time to the rack unit U11 and the predetermined transport time from the rack unit U11. The standby time acquisition unit 104 outputs the acquired predetermined standby time to the transport control unit 106. Next, the control device 100 executes step S13. In step S13, the transport control unit 106 calculates the adjustment time for the wafer W to be transported. For example, the transport control unit 106 calculates the adjustment time for the wafer W based on the transport reference time set by the transport reference time setting unit 102, the predetermined standby time obtained by the standby time acquisition unit 104, and the known transport time. The known transport time refers to the time it takes for the transport device A8 to move one wafer W from the rack unit U11 and into the substrate receiving unit 20, which is approximately fixed for each wafer W. The transport control unit 106 calculates the adjustment time by subtracting the predetermined standby time and the transport time from the transport reference time. Next, the control device 100 executes steps S14 and S15. In step S14, for example, the transport control unit 106 controls the transport device A8 to keep the wafer W in the rack unit U11 for an adjustment time that is only longer than the predetermined standby time. In other words, the transport control unit 106 controls the transport device A8 to wait for the wafer to be removed from the rack unit U11 for only the adjustment time. In step S14, when the adjustment time has elapsed, the control device 100 executes step S15. In step S15, the transport control unit 106 controls the transport device A8 to remove the wafer W from the rack unit U11 and move the wafer W into the substrate receiving unit 20. In this way, the adjustment time is calculated for each wafer W according to the standby time in the rack unit U11, so as to reduce the time difference of the reception standby time spent by each wafer W from the film deposition process of the processing module 14 to the time it is received in the substrate receiving unit 20. Furthermore, the transport control unit 106 can also adjust the transport speed performed by the transport device A8 according to the adjustment time, without changing the predetermined standby time in the rack unit U11. The transport control unit 106 changes the transport speed of the transport device A8 by adjusting the time only to extend the predetermined transport time, thereby reducing the time difference of the storage standby time of each wafer W. The action command holding unit 116 can also store action commands in which the storage standby time has been adjusted, and the transport control unit 106 can also adjust the storage standby time of each wafer W by executing the transport based on the action command. Next, the control device 100 executes step S16. In step S16, the transport control unit 106 determines whether a transport command for wafer W has been received from the operation command holding unit 116. If no transport command has been received, the transport control unit 106 repeats steps S12 to S16. In this way, while adjusting the storage standby time for each of the plurality of wafers W to the transport reference time, the plurality of wafers W are stored in the substrate storage unit 20. In step S16, when the transport control unit 106 receives the aforementioned transport instruction, the control device 100 executes step S17. In step S17, the transport control unit 106 controls the transport device A8 to transport the wafer W to be transported. For example, the transport control unit 106 transports the wafer W that has been staying in the substrate receiving unit 20 for the longest time as the transport target. The transport control unit 106 controls the transport device A8 to receive the wafer W transported from the substrate receiving unit 20 to the exposure apparatus 3. The time point of transporting into the exposure apparatus 3 is sometimes determined by the time point of the exposure process performed by the exposure apparatus 3. Therefore, for each wafer W, the waiting time until it is placed into the exposure apparatus 3 will vary depending on the time point of the exposure process performed by the exposure apparatus 3, and if the wafer W is left idle in the transport space outside the substrate receiving unit 20, the moisture content may change (may increase). In this regard, since the moisture content of each wafer W is unlikely to differ due to different dwell times within the substrate housing unit 20, the control device 100 reduces the difference in moisture content by keeping the wafer W in standby mode in the substrate housing unit 20. Next, an example of the procedure for adjusting the moisture content after exposure processing will be described. Figure 7 is a flowchart showing the procedure for adjusting the dehydration time in the dehydration unit 30. The control device 100 controls the conveying device A8 to move at least a portion of the exposed wafer W into the dehydration unit 30 and to remove the wafer W from the dehydration unit 30 at a time point set such that "the residence time of the wafer W in the dehydration unit 30 increases as the residence time in the exposure device 3 decreases". As shown in Figure 7, firstly, the control device 100 executes step S21. In step S21, the dwell time calculation unit 108 obtains the moment when the wafer W is moved into the exposure apparatus 3 (moving-in moment). The control device 100 then executes step S22 after remaining in standby mode until the exposure process of the wafer W by the exposure apparatus 3 is completed. In step S22, the dwell time calculation unit 108 obtains the moment when the wafer W is removed from the exposure apparatus 3 (removal moment). Next, the control device 100 executes step S23. In step S23, the residence time calculation unit 108 calculates the residence time of the wafer W removed from the exposure apparatus 3 within the exposure apparatus 3. For example, the residence time calculation unit 108 calculates the difference between the removal time obtained in step S22 and the loading time obtained in step S21 as the residence time within the exposure apparatus 3. The residence time calculation unit 108 outputs the calculated residence time to the dehydration time calculation unit 110. Next, the control device 100 executes step S24. In step S24, the control device 100 determines whether the residence time calculated by the residence time calculation unit 108 is less than a preset reference time. The reference time can be the assumed maximum residence time of the exposure device 3, or it can be the assumed saturation time of the moisture content. The saturation time refers to the time that the device should remain in the exposure device 3 in order to reduce the decrease in moisture content per unit time to a predetermined threshold. In step S24, if the residence time is determined to be greater than or equal to the reference time, the control device 100 executes step S29. The processing container in step S29 is as described later. In step S24, if the residence time is determined to be less than a reference time (e.g., saturation time), the control device 100 executes step S25. In step S25, the dehydration time calculation unit 110 calculates the dehydration time within the dehydration unit 30 based on the residence time calculated by the residence time calculation unit 108. Here, the dehydration time refers to the time the wafer W resides within the dehydration unit 30. For example, the dehydration time calculation unit 110 calculates the dehydration time of the wafer W within the dehydration unit 30 in accordance with the residence time of the exposure device 3. The dehydration time calculation unit 110 calculates the dehydration time in a manner that the dehydration time decreases as the residence time of the exposure device 3 increases. In other words, the dehydration time calculation unit 110 calculates the dehydration time in a manner that the dehydration time increases as the residence time of the exposure device 3 decreases. The dehydration time calculation unit 110 can also calculate the difference between the aforementioned reference time and the residence time as the dehydration time. The dehydration time calculation unit 110 can also calculate the value obtained by applying a predetermined correction process to this difference as the dehydration time. The dehydration time calculation unit 110 can also refer to a lookup table that "pre-memorizes in the memory 123 the residence time of the exposure device 3 and corresponds to the aforementioned dehydration time" to calculate the dehydration time within the dehydration unit 30. The dehydration time calculation unit 110 outputs the calculated dehydration time to the transport control unit 106. Next, the control device 100 executes step S26. In step S26, the transport control unit 106 transports the wafer W to be adjusted into the dehydration unit 30. For example, the transport control unit 106 controls the transport device A8 to transport the wafer W to be adjusted from the exposure device 3 into the dehydration unit 30. Next, the control device 100 executes step S27. In step S27, the control device 100 waits for the calculated (set) dehydration time for the wafer W to be adjusted to elapse. When the dehydration time has elapsed, the control device 100 executes step S28. In step S28, for example, the transport control unit 106 controls the transport device A8 in a manner that "the wafer W, which has been held in the dehydration unit 30 for the calculated dehydration time, will be removed from the dehydration unit 30". Next, the control device 100 executes step S29. In step S29, the transport control unit 106 controls the transport devices A8 and A3 to transport the wafer W to the heat treatment unit U8. In step S22, when the dwell time of the exposure device 3 is determined to be greater than the reference time, the transport control unit 106 controls the transport devices A3 and A8 to transport the wafer W from the exposure device 3 toward the heat treatment unit U8 without passing through the dehydration unit 30. Through the above, the adjustment method for the reaction water content (moisture content) of a wafer W after exposure processing is completed. The control device 100 performs steps S21 to S29 for each wafer W. Alternatively, the control device 100 can also move all wafers W to be adjusted into the dehydration unit 30 and adjust the dehydration time of each wafer W without performing the judgment process in step S24. After the wafer W is moved into the heat treatment unit U8 after the aforementioned dehydration time adjustment, the heat treatment unit control unit 114 can also be held in the operation command holding unit 116 and control the heat treatment unit U8 to perform the heat treatment of the wafer W for a preset heating time. [Effects of the Embodiment] The coating and developing apparatus 2 of this embodiment described above includes: a coating unit U3 and a heat treatment unit U4 for forming a film on a wafer W; a heat treatment unit U8 for heating the wafer W, on which a film has been formed and exposed; a developing unit U7 for developing the film on the heated wafer W; and a control device 100 for reducing the difference in water content of each wafer W reacting during the heat treatment in the heat treatment unit U8 within the film formed on the wafer W. In this coating and developing apparatus 2, the control device 100 reduces the difference in water content (reaction water content) of each wafer W during the heat treatment in the heat treatment unit U8 within the film formed on the wafer W. The size of the photoresist pattern formed using metal photoresist is easily affected by the water content reacted within the film during the heat treatment before development. Therefore, when the reaction water content varies for each wafer W, the size of the photoresist pattern formed between wafers W is prone to deviation. However, since the control device 100 reduces the difference in reaction water content during the heat treatment of the exposed wafers W in the coating and developing apparatus 2, the size deviation of the photoresist pattern between wafers W is less likely to occur. As a result, the coating and developing apparatus 2 is effective in improving the dimensional stability of photoresist patterns using metal photoresist. The control device 100 reduces the difference in water content contained in the film of each wafer W at the start of the heat treatment in the heat treatment unit U8. In this case, since the difference in water content contained in the film is reduced at the start of the heat treatment in the heat treatment unit U8, the aforementioned difference in reaction water content is also reduced. As a result, the dimensional stability of the photoresist pattern formed using the metal photoresist can be improved. The control device 100 adjusts the moisture content of each wafer W at least before exposure processing to reduce the difference in moisture content at the start of heat treatment in the heat treatment unit U8. The size of the photoresist pattern is also affected by the moisture content during exposure processing. In this configuration, the moisture content is adjusted before exposure processing, thereby reducing the difference in moisture content between each wafer W during exposure processing. As a result, the dimensional stability of the photoresist pattern can be more reliably improved. The coating and developing apparatus 2 further includes: transport devices A3 and A8 for transporting wafer W; and a substrate housing unit 20, configured to further suppress changes in moisture content compared to the transport space of the transport devices A3 and A8. The control device 100 controls the transport devices A3 and A8 to transport the wafer W, before exposure processing, into the substrate housing unit 20 after the film formation performed by the coating unit U3 and the heat treatment unit U4. After the heat treatment (film formation) performed by the heat treatment unit U4, the time until each wafer W is transported to the exposure apparatus 3 may vary. In the above configuration, the wafer W waits in a space that suppresses changes in the moisture content of the film, thereby suppressing changes in the moisture content of wafers W with longer waiting times until they are transported to the exposure apparatus 3. As a result, the difference in moisture content among each wafer W can be reduced, thereby improving the dimensional stability of the photoresist pattern. The control device 100 controls the transport devices A3 and A8 in a manner that minimizes the time difference between when each wafer W is removed from the heat treatment unit U4 and when it is transported into the substrate receiving unit 20. During transport from the heat treatment (film formation) performed by the heat treatment unit U4 until it is transported into the substrate receiving unit 20, the moisture content of the film may change. Therefore, when a difference occurs in the transport time between wafers W from the heat treatment unit U4 to the substrate receiving unit 20, a difference in the moisture content of each wafer W occurs. In the above configuration, by minimizing the time difference in transport time between each wafer W from the heat treatment unit U4 to its transport into the substrate receiving unit 20, the difference in moisture content of each transported wafer W is reduced. As a result, the dimensional stability of the photoresist pattern can be improved more reliably. The control device 100 adjusts the moisture content of each wafer W at least after the exposure process performed by the exposure apparatus 3, in order to reduce the difference in moisture content at the start of the heat treatment in the heat treatment unit U8. Even within the exposure apparatus 3, the moisture content may change. In this configuration, since the moisture content is adjusted for each wafer W at least after the exposure process, the difference in moisture content of each wafer W caused by the exposure apparatus 3 is also reduced. As a result, the dimensional stability of photoresist patterns using metal photoresist is more reliably improved. The control device 100 adjusts the water content of each wafer W after exposure processing according to the residence time within the exposure apparatus 3. In the exposure apparatus 3, when the residence time of each wafer W is different, a difference in water content occurs in each wafer W. Since the above configuration adjusts the difference in water content of each wafer W according to the residence time within the exposure apparatus 3, the difference in water content of each wafer W caused by residence in the exposure apparatus 3 can be reduced. As a result, the dimensional stability of photoresist patterns using metal photoresist can be improved. The control device 100 controls the transport device A8 to move at least a portion of the exposed wafer W into the dehydration unit 30 and to remove the wafer W from the dehydration unit 30 at a time point "set so that the residence time (dehydration time) of the wafer W in the dehydration unit 30 increases as the residence time in the exposure apparatus 3 decreases". The shorter the residence time in the exposure apparatus 3, the less the water content in the wafer W decreases. In this configuration, because the shorter the residence time in the exposure apparatus 3, the longer the residence time in the dehydration unit 30, the water content of the coating in the wafer W is further reduced. Therefore, since the difference in water content among each wafer W can be reduced, the dimensional stability of photoresist patterns using metal photoresist can be improved. While the above describes the implementation forms, this disclosure is not necessarily limited to the implementation forms described above, and various changes can be made without departing from its essence. (Modification of the first embodiment) The method for adjusting the moisture content after exposure is not limited to the method performed by the dehydration unit 30 described above. For example, the control device 100 may also use a humidification unit 40 (humidification section) instead of the dehydration unit 30 to adjust the moisture content of the wafer W after exposure. For example, the humidification unit 40 (configuration example, not shown) has: a housing; a support plate; and a supply path. The housing has an internal space and houses the support plate. The support plate supports the wafer W. The supply path is connected to one end of the housing and supplies humidified air (humidified air) into the housing. The humidification environment within the humidification unit 40 (e.g., the rate of increase in moisture content per unit time) can also be kept substantially constant by adjusting the supply amount of humidified air using the control device 100. The control device 100 controls the transport device A8 to move at least a portion of the exposed wafers W (including all wafers W) into the humidification unit 40, and to remove the wafers W from the humidification unit 40 at a time point set to "as the residence time in the exposure apparatus 3 increases, the residence time of the wafers W in the humidification unit 40 also increases." A flowchart showing the adjustment procedure for the humidification time (residence time in the humidification unit 40) of the humidification unit 40 is omitted. For example, in adjusting the humidification time, firstly, the dwell time calculation unit 108 calculates the dwell time of the exposure device 3 in the same way as in step S21. Secondly, the control device 100 calculates the humidification time of the humidification unit 40 in accordance with the dwell time of the exposure device 3. The control device 100 calculates the humidification time in a manner that the humidification time of the humidification unit 40 increases as the dwell time of the exposure device 3 increases. In other words, the control device 100 calculates the humidification time in a manner that the humidification time of the humidification unit 40 decreases as the dwell time of the exposure device 3 decreases. Furthermore, the transport control unit 106 controls the transport device A8 to transport the wafer W into the humidification unit 40. After the wafer W is moved into the humidification unit 40 and the calculated humidification time has elapsed, the transport control unit 106 controls the transport device A8 to remove the wafer W from the humidification unit 40. Furthermore, the transport control unit 106 controls the transport devices A3 and A8 to move the wafer W into the heat treatment unit U8. Subsequently, the heat treatment unit control unit 114 controls the heat treatment unit U8 to apply heat treatment to the wafer W based on the operation command holding unit 116. The control device 100 adjusts the humidification time for each wafer W in this way, thereby adjusting the moisture content of each wafer W after the exposure process. In this modified example, the control device 100 controls the transport device A8 to move at least a portion of the exposed wafer W into the humidification unit 40 and remove the wafer W from the humidification unit 40 at a time point set such that "the residence time (humidification time) of the wafer W in the humidification unit 40 increases as the residence time in the exposure apparatus 3 increases." The longer the residence time in the exposure apparatus 3, the less water content is contained in the wafer. In this configuration, because the longer the residence time in the exposure apparatus, the longer the residence time in the humidification unit, the more water content is contained in the wafer. Therefore, since the difference in water content between each wafer can be reduced, the dimensional stability of the photoresist pattern using the metal photoresist can be improved. In addition, the control device 100 can also adjust the moisture content using both the dehydration unit 30 and the humidification unit 40 after the exposure process. The control device 100 can also use either the dehydration unit 30 or the humidification unit 40 to adjust the moisture content without adjusting the substrate receiving unit 20 or the transport time. In this case, the coating and developing apparatus 2 may also be without the substrate receiving unit 20. The control device 100 can adjust the moisture content due to the adjustment of the substrate housing unit 20 and the transport time (housing standby time), without adjusting the moisture content using the dehydration unit 30 and the humidification unit 40. In this case, the coating and developing apparatus 2 may also be without the dehydration unit 30 and the humidification unit 40. The control device 100 can also adjust the moisture content before exposure by housing the wafer W in the substrate housing unit 20, without adjusting the moisture content due to the adjustment of the transport time. For example, the difference in standby time in the coating and developing apparatus 2 caused by the operation of the transport device A8 is sometimes slight compared to the difference in standby time for each wafer W caused by the processing time of the exposure apparatus 3. In this case, even if the adjustment of the transport time is omitted, it is possible to sufficiently adjust the moisture content. In such cases, by omitting the adjustment of the transport time, the processing load of the control device 100 is reduced. [Second Embodiment] Next, referring to FIG8, the substrate processing system 1 of the second embodiment will be described. In the substrate processing system 1 (coating and developing apparatus 2) of the second embodiment, the control device 100 is equipped with a heating time calculation unit 112 instead of a dehydration time calculation unit 110, and the adjustment procedure of the reaction water content performed by the control device 100 is different from that of the first embodiment. The control device 100 adjusts the heating time of the heat treatment unit U8 according to the dwell time of the exposure apparatus 3. Specifically, the control device 100 can also control the heat treatment unit U8 in a manner that increases the heating time of the wafer W as the dwell time in the exposure apparatus 3 increases. The heating time calculation unit 112 of the control device 100 calculates the heating time for each wafer W for the heat treatment performed by the heat treatment unit U8 based on the dwell time in the exposure apparatus 3 calculated by the dwell time calculation unit 108. The heating time calculation unit 112 outputs the calculated heating time to the heat treatment unit control unit 114. The heat treatment unit control unit 114 can also control the heat treatment unit U8 in a manner that performs pre-development heat treatment based on the heating time calculated by the heating time calculation unit 112. Figure 8 is a flowchart illustrating the adjustment procedure for the heating treatment time in the heat treatment unit U8. As shown in Figure 8, in this heating treatment time adjustment procedure, firstly, the control device 100 executes step S31. In step S31, the dwell time calculation unit 108 obtains the entry time of the exposure device 3 and the exit time of the exposure device 3, and calculates the dwell time of the exposure device 3 in the same manner as in step S23. The dwell time calculation unit 108 outputs the calculated dwell time of the exposure device 3 to the heating time calculation unit 112. Next, the control device 100 executes step S32. In step S32, the heating time calculation unit 112 calculates the heating time of the heat treatment unit U8 based on the dwell time calculated by the dwell time calculation unit 108. Here, the heating time refers to the time for heating the wafer W before imaging in the heat treatment unit U8. For example, the heating time calculation unit 112 calculates the heating time of the heat treatment unit U8 for the wafer W in accordance with the dwell time of the exposure apparatus 3. The heating time calculation unit 112 calculates the heating time in a manner that the heating time increases as the dwell time of the exposure apparatus 3 increases. In other words, the heating time calculation unit 112 calculates the heating time in a manner that the heating time decreases as the dwell time of the exposure apparatus 3 decreases. The heating time calculation unit 112 can also refer to the comparison table "which corresponds to the dwell time of the exposure device 3 and the above-mentioned heating time" stored in the memory 123, and thereby calculate the heating time of the heat treatment unit U8. The heating time calculation unit 112 outputs the calculated heating time to the heat treatment unit control unit 114. Next, the control device 100 executes step S33. In step S33, the transport control unit 106 controls the transport devices A3 and A8 to transport the wafer W into the heat treatment unit U8. After the wafer W is transported into the heat treatment unit U8 by the transport device A3, the heat treatment unit control unit 114 controls the heat treatment unit U8 to start the heat treatment of the wafer W. Next, the control device 100 executes step S34. In step S34, the heat treatment unit control unit 114 waits until the heating time calculated by the heating time calculation unit 112 has elapsed. After the heating time has elapsed, the control device 100 executes step S35. In step S35, for example, the transport control unit 106 controls the transport device A3 in a manner that "the wafer W, which has undergone heat treatment for the heating time calculated (set) only by the heating time calculation unit 112, is moved out of the heat treatment unit U8". In addition, after the wafer W, which has undergone heat treatment for the heating time only, is cooled by the cooling plate in the heat treatment unit U8, the transport control unit 106 controls the transport device A8 in a manner that the wafer W is moved out of the heat treatment unit U8. The adjustment procedure for the heat treatment time of one wafer W is thus completed. The control device 100 repeats steps S31 to S35 for each wafer W. Furthermore, after step S35, the transport control unit 106 controls the transport device A3 to transport the wafer W from the heat treatment unit U8 into the imaging unit U7. Subsequently, the control device 100 controls the imaging unit U7 to apply imaging processing to the wafer W. Moreover, the control device 100 can also control the transport device A3 and the heat treatment unit U8 to apply post-imaging processing heat treatment to the wafer W in the heat treatment unit U8 after imaging processing. In the coating and developing apparatus 2 of the substrate processing system 1 in the second embodiment, the control device 100 controls the heat treatment unit U8 in such a way that the heat treatment time of the wafer W increases as the residence time in the exposure apparatus 3 increases. In this case, the longer the residence time in the exposure apparatus 3, the less water content there is, and the longer the heat treatment time of the heat treatment unit U8. Conversely, the shorter the residence time in the exposure apparatus 3, the more water content there is, and the shorter the heat treatment time of the heat treatment unit U8. Therefore, even if there is a difference in the residence time of the exposure apparatus 3, the difference in the reactive water content of each wafer W during heat treatment in the heat treatment unit U8 is reduced. As a result, the dimensional stability of the photoresist pattern using the metal photoresist is improved. The control device 100, in addition to adjusting the heating time in the heat treatment unit U8, can also, similar to the first embodiment, adjust the moisture content caused by adjusting the substrate housing unit 20 and the transport time before the exposure process. Alternatively, the control device 100 can adjust the heating time in the heat treatment unit U8 without adjusting the moisture content caused by adjusting the substrate housing unit 20 and the transport time before the exposure process. In this case, since the reaction water content can be adjusted even without a device (humidification mechanism 7) for adjusting the reaction water content, both dimensional stability and simplification of the coating and developing apparatus 2 can be achieved. Furthermore, the control device 100 can also combine the heating time adjustment in the second embodiment with the adjustments performed by the dehydration unit 30 or the humidification unit 40 in the first embodiment. [Third Embodiment] Next, referring to FIG. 9, the substrate processing system 1 of the third embodiment will be described. In the substrate processing system 1 (coating and developing apparatus 2) of the third embodiment, the adjustment procedure for the moisture content before exposure processing performed by the control device 100 is different from that of the first embodiment. The control device 100 adjusts the moisture content before exposure processing by means of the dehydration unit 30. In this case, the control device 100 controls the transport device A8 in such a way that the wafer W before exposure processing performed by the exposure apparatus 3 is transported into the dehydration unit 30 after the heat treatment (film formation) of the heat treatment unit U4. Furthermore, the control device 100 controls the transport device A8 to remove the wafer W from the dehydration unit 30 at a time point set to "reduce the difference in moisture content of each wafer W when it is removed from the dehydration unit 30 compared to when it is transported into the dehydration unit 30". Figure 9 illustrates an example of an adjustment procedure performed by the dehydration unit 30 before exposure processing, showing the adjustment process from the removal time point (residual time within the dehydration unit 30) of the dehydration unit 30. In this adjustment procedure, firstly, the control device 100 executes step S41. In step S41, for example, the transport control unit 106 controls the transport device A8 to sequentially move a plurality of wafers W from the shelf unit U11 into the dehydration unit 30 based on the transport plan of the operation command holding unit 116. Next, the control device 100 executes step S42. In step S42, the transport control unit 106 determines whether it has received a transport command for wafer W from the operation command holding unit 116. If no transport command is received, the transport control unit 106 repeats steps S41 and S42. In this way, a plurality of wafers W are transported into the dehydration unit 30. In step S42, when the transport control unit 106 receives the aforementioned removal command, the control device 100 executes step S43. In step S43, for example, the control device 100 calculates the residence time of each of the plurality of wafers W housed in the dehydration unit 30 at the current time. Then, the control device 100 executes step S44. In step S44, the transport control unit 106 controls the transport device A8 to remove the wafer W to be removed. Specifically, the transport control unit 106 controls the transport device A8 to remove the wafer W with the longest residence time from the dehydration unit 30. After being removed from the dehydration unit 30, the transport control unit 106 controls the transport device A8 to move the wafer W into the exposure apparatus 3. The control device 100 repeats steps S41 to S44 above. Through this process, since the wafer W with the longest dwell time is removed whenever a removal command is received, the moisture content of each wafer W moved into the exposure apparatus 3 via the dehydration unit 30 reaches a saturation level (a level where the reduction rate per unit time decreases to a predetermined threshold). Therefore, when removed from the dehydration unit 30, the difference in moisture content between each wafer W is smaller than when removed from the dehydration unit 30. Furthermore, the control device 100 can also wait to remove wafers from the dehydration unit 30 even when fewer wafers W are housed there and none of the wafers W have reached a saturation level. Alternatively, the control device 100 can replace step S44 with the following process: adjusting the residence time (dehydration time) of the dehydration unit 30 according to the transport time from the heat treatment unit U4 to the dehydration unit 30, thereby controlling the transport device A8. For example, the control device 100 can also control the transport device A8 in such a way that the longer the transport time to the dehydration unit 30 is, the longer the residence time in the dehydration unit 30 is, the more likely the wafer W is to be removed from the dehydration unit 30. Furthermore, the control device 100 can also replace the dehydration unit 30 with a humidification unit 40, thereby adjusting the reaction water content through the same procedure as described above. In the coating and developing apparatus 2 of the substrate processing system 1 in the third embodiment, the control device 100 controls the transport device A8 to move the wafer W, before exposure processing, into the dehydration unit 30 after heat treatment (film formation) in the heat treatment unit U4. When the wafer W is moved into the dehydration unit 30 and the water content in the wafer W decreases, the reduction in water content reaches a passivation state (passivation state) at a certain level. Therefore, by transferring the wafer W to the exposure apparatus 3 after moving it into the dehydration unit 30, the difference between the maximum and minimum water content values ​​among multiple wafers W is reduced. This reduces the difference in water content among each wafer W, thereby improving the dimensional stability of the photoresist pattern. The control device 100 controls the conveying device A8 to remove wafers W from the dehydration unit 30 at a time point set to "reduce the difference in moisture content between each wafer W when it leaves the dehydration unit 30 compared to when it enters the dehydration unit 30". For example, wafers W are removed from the dehydration unit 30 at the time point when the moisture content of all wafers W in the dehydration unit 30 reaches the saturation level. Therefore, even if wafers W in a passivated state due to reduced moisture content enter the exposure apparatus 3, the moisture content in the exposure apparatus 3 decreases only slightly regardless of the residence time. This suppresses the difference in moisture content between wafers W caused by residence time in the exposure apparatus 3, thereby reducing the difference in moisture content between each wafer W. Alternatively, the residence time of the dehydration unit 30 can be varied according to the transport time up to the dehydration unit 30 (for example, the longer the transport time, the longer the residence time is set), thereby reducing the difference in water content in each wafer W. These results can more reliably improve the dimensional stability of the photoresist pattern. In the third embodiment, the control device 100 can also adjust the moisture content of each of the plurality of wafers W to a saturation level in the dehydration unit 30 before exposure processing, and not adjust the reactive water content (moisture content) after exposure processing. In the substrate processing system 1, the productivity of the coating and developing apparatus 2 is sometimes greater than that of the exposure apparatus 3. In this case, since the overall productivity of the substrate processing system 1 is determined by the exposure apparatus 3, from a production efficiency point of view, it is more efficient to process the wafers W after exposure processing by the exposure apparatus 3 without interruption (only the minimum process required for wafer W production). Therefore, in order to balance the adjustment of moisture content and production efficiency, the coating and developing apparatus 2 can also be configured to perform the aforementioned adjustment of moisture content before exposure processing by the control device 100, and not perform any adjustment after exposure processing. The control device 100 can combine at least one of the adjustments caused by the dehydration unit 30 or humidification unit 40 in the first embodiment and the adjustment of the heating time in the second embodiment with the adjustment caused by the dehydration unit 30 in the third embodiment. For example, the control device 100 can adjust the moisture content not only by the dehydration unit 30 before exposure processing but also by the dehydration unit 30 after exposure processing. In this case, the coating and developing apparatus 2 can also have two different dehydration units 30. For example, the control device 100 can adjust the reaction water content not only by the dehydration unit 30 before exposure processing but also by adjusting the heating time of the heat treatment unit U8 after exposure processing. In addition, the substrate processing system 1 (substrate processing apparatus) adjusts the reaction water content (moisture content) by adjusting the residence time of each wafer W in the exposure apparatus 3. The substrate being processed is not limited to semiconductor wafers, but can also be, for example, a glass substrate, a mask substrate, or an FPD (Flat Panel Display). 1: Substrate processing system; 2: Coating and developing apparatus; 3: Exposure apparatus; 7: Humidification mechanism; 20: Substrate receiving unit; 30: Dehydration unit; 40: Humidification unit; 100: Control device; A3, A8: Conveying device; U3: Coating unit; U7: Developing unit; U8: Heat treatment unit. [Figure 1] Figure 1 is a diagram illustrating the general structure of the substrate processing system of the first embodiment. [Figure 2] Figure 2 is a schematic diagram showing the internal structure of the substrate processing apparatus of the first embodiment. [Figure 3] Figure 3(a) is a schematic diagram showing an example of a substrate housing unit. Figure 3(b) is a schematic diagram showing an example of a dehydration unit. [Figure 4] Figure 4 is a functional block diagram showing an example of the functional structure of a control device. [Figure 5] Figure 5 is a block diagram showing an example of the hardware structure of a control device. [Figure 6] Figure 6 is a flowchart showing an example of a procedure for adjusting the amount of water contained in the substrate. [Figure 7] Figure 7 is a flowchart showing another example of a procedure for adjusting the amount of water contained in the substrate. [Figure 8] Figure 8 is a flowchart showing an example of a procedure for adjusting the reaction water content in the substrate processing system of the second embodiment. [Figure 9] Figure 9 is a flowchart showing an example of a procedure for adjusting the amount of water contained in the substrate processing system of the third embodiment. 100: Control device 102: Transport Reference Time Setting Department 104: Standby Time Acquisition Department 106: Transport Control Department 108: Detention Time Calculation Department 110: Dehydration Time Calculation Section 112: Heating Time Calculation Section 114: Heat Treatment Unit Control Section 116: Motion Command Holding Section A3:Conveying device A8:Conveying device U8: Heat Treatment Unit

Claims

1. A substrate processing apparatus, characterized in that it comprises: a first housing containing a substrate having a metal photoresist film having undergone exposure treatment; a supply path for supplying moisture to the interior of the first housing; a second housing configured to contain the substrate having the metal photoresist film having undergone exposure treatment, and being in a vacuum state by being drawn in through a connecting pipe; and a heat treatment unit for performing heat treatment on the substrate having passed through the first housing or the second housing before developing the image.

2. The substrate processing apparatus as described in claim 1, wherein, It further includes: a receiving arm that transports the substrate between itself and the aforementioned first housing, wherein the humidity inside the aforementioned first housing is higher than that in the transport area of ​​the aforementioned receiving arm.

3. The substrate processing apparatus as described in claim 2, wherein, It further includes: a carrier for housing the substrate heated by the aforementioned heat treatment unit; and a transport space for transporting the substrate between the aforementioned receiving arm and the aforementioned carrier, wherein the aforementioned heat treatment unit is located between the aforementioned receiving arm and the aforementioned carrier, and is located above the aforementioned transport space.

4. The substrate processing apparatus as described in claim 1, wherein, The aforementioned supply route involves supplying humidified air.

5. A substrate processing method, characterized in that it comprises: housing a substrate having a metal photoresist film having undergone exposure treatment in a first housing; supplying moisture to the interior of the first housing; housing the substrate having a metal photoresist film having undergone exposure treatment in a second housing, the second housing being in a vacuum state by being drawn in through a connecting pipe; and performing a heating treatment on the substrate having passed through the first housing or the second housing before developing the image.

6. The substrate processing method as described in claim 5, wherein, It further includes: using a receiving arm to transport the aforementioned substrate between itself and the aforementioned first housing, wherein the humidity inside the aforementioned first housing is higher than that in the transport area of ​​the aforementioned receiving arm.

7. The substrate processing method as described in claim 6, wherein, It further includes: housing the substrate heated by the aforementioned heat treatment in a carrier; and transporting the substrate in a transport space between the aforementioned receiving arm and the aforementioned carrier, wherein the space for performing the aforementioned heat treatment is located between the aforementioned receiving arm and the aforementioned carrier, and is located above the aforementioned transport space.

8. The substrate processing method as described in claim 5, wherein, The aforementioned supply route involves supplying humidified air.

9. A computer-readable memory medium, characterized in that it stores a program useful for enabling a device to perform a substrate processing method as claimed in claim 5.

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