System and method for organic residue analysis

Abstract

This invention discloses an organic residue analysis system, comprising a analyte information acquisition device, an information analysis device, and an artificial intelligence process analysis device. The analyte information acquisition device captures an image of the analyte to obtain an image of its organic matter distribution. The information analysis device is connected to or coupled to the analyte information acquisition device to acquire the organic matter distribution image and obtain organic matter sample information from the image. The artificial intelligence process analysis device is connected to or coupled to the information analysis device to acquire the organic matter sample information and maps the input organic matter sample information to obtain corresponding process improvement strategy information.

Claims

1. An organic residue analysis system, comprising: A device for acquiring information about a test object captures an image of the distribution of organic matter in the test object; An information analysis device is connected or coupled to the analyte information acquisition device to obtain an organic matter distribution image and obtain an organic matter sample information from the organic matter distribution image; The system also includes an artificial intelligence process analysis device, connected or coupled to the information analysis device, to obtain information about the organic sample. The artificial intelligence process analysis device maps the input information about the organic sample to obtain corresponding process improvement countermeasure information. The test object information acquisition device further includes a thickness measurement device to obtain film thickness information about the test object. The organic sample information includes the location, size, and / or film thickness information of the organic material.

2. The organic residue analysis system as claimed in claim 1, wherein the analyte information acquisition device includes an excitation light generating device and an image capturing device, the excitation light generating device provides an excitation light to the analyte placed on a detection platform, thereby exciting the organic matter on the analyte to produce photoluminescence, and the image capturing device captures a photoluminescence image of the analyte.

3. The organic residue analysis system as described in claim 2, wherein the analyte information acquisition device further includes a spectral measurement device for measuring the analyte that generates photoluminescence, so as to obtain a spectral wavelength of photoluminescence of the organic matter on the analyte.

4. The organic residue analysis system as described in claim 3, wherein the organic sample information includes the spectral wavelength or information on the type of organic substance corresponding to the spectral wavelength.

5. The organic residue analysis system as claimed in claim 1, wherein the thickness measuring device includes a spectroscopic interferometer, an ellipsometer, a photosensitive coupling element, a dispersive confocal displacement sensing device, or a combination thereof.

6. The organic residue analysis system as claimed in claim 1, wherein the analyte information acquisition device includes an auxiliary light source device and an image acquisition device, the auxiliary light source device being used to provide white light to the analyte placed on a detection platform, and the image acquisition device being used to capture images of the analyte to obtain an image of the organic matter distribution.

7. The organic residue analysis system as claimed in claim 1, wherein the process improvement countermeasure information includes suggested correction values ​​for multiple parameters in the semiconductor manufacturing process, which are directly generated.

8. The organic residue analysis system as claimed in claim 7, wherein the suggested correction values ​​for these parameters include photomask pattern, photomask precision, photomask linewidth, exposure dose, focal length, photoresist thickness, exposure time and intensity, etching rate, etching directionality, plasma power, gas flow rate and composition ratio, pressure, temperature, deposition rate, implantation energy, beam current, and / or process-controllable parameters.

9. The organic residue analysis system as claimed in claim 1, wherein the process improvement countermeasure information includes a complete set of process correction countermeasures.

10. The organic residue analysis system as described in claim 9, wherein the complete process correction strategy includes analysis of the causes of organic residue generation, a scheme to improve organic residue, recommended parameter values ​​for adjustment, expected improvement effect after correction, and / or cost and benefit analysis.

11. A method for analyzing organic residues, comprising: Take a picture of the test object to obtain an image of the distribution of organic matter in the test object; Information on an organic sample is obtained from the organic distribution image using an information analysis device. And by mapping the input organic sample information to a corresponding process improvement strategy information through an artificial intelligence process analysis device; further comprising: obtaining film thickness information of the test object through a film thickness measurement device; wherein the organic sample information includes the location, size, and / or film thickness information of the organic matter.

12. The method for analyzing organic residues as described in claim 11, wherein acquiring the organic residue distribution image of the analyte includes: An excitation light is provided to the analyte, thereby exciting the organic matter on the analyte to produce photoluminescence; And to capture the photoluminescence image of the object under test.

13. The method for analyzing organic residues as described in claim 12 further includes: The analyte that produces photoluminescence is measured to obtain a spectral wavelength of the photoluminescence of the organic matter on the analyte.

14. The method for analyzing organic residues as described in claim 13, wherein the organic sample information includes the spectral wavelength or information on the type of organic matter corresponding to the spectral wavelength.

15. The method for analyzing organic residues as described in claim 14, wherein the mapping relationship between the spectral wavelength and the information on the type of organic matter corresponding to the spectral wavelength is obtained by: providing a training test piece that is the same as or partially the same as the material to be tested but does not contain organic matter; measuring the training test piece that does not contain organic matter to obtain a first spectral wavelength of the training test piece that does not contain organic matter; coating the training test piece with a single organic matter; measuring the training test piece after coating with the single organic matter to obtain a second spectral wavelength of the training test piece that includes the single organic matter; deriving a third spectral wavelength of the single organic matter from the second spectral wavelength and inputting the third spectral wavelength into the artificial intelligence process analysis device and labeling the material information corresponding to the single organic matter, for training an artificial intelligence model of the artificial intelligence process analysis device.

16. The method for analyzing organic residues as described in claim 11, wherein acquiring the organic residue distribution image of the analyte includes: Provide white light to the test object; And to photograph the object under test to obtain an image of the distribution of the organic matter.

17. The organic residue analysis method as described in claim 11, wherein the process improvement countermeasure information includes suggested correction values ​​for multiple parameters in the semiconductor manufacturing process, which are directly generated.

18. The method for analyzing organic residues as described in claim 17, wherein the suggested correction values ​​for these parameters include photomask pattern, photomask precision, photomask linewidth, exposure dose, focal length, photoresist thickness, exposure time and intensity, etching rate, etching directionality, plasma power, gas flow rate and composition ratio, pressure, temperature, deposition rate, implantation energy, beam current, and / or relevant parameters controllable in the process.

19. The method for analyzing organic residues as described in claim 11, wherein the process improvement countermeasure information includes a complete set of process correction countermeasures.

20. The method for analyzing organic residues as described in claim 19, wherein the complete process correction strategy includes analysis of the causes of organic residue generation, a scheme to improve organic residues, recommended parameter values ​​for adjustment, expected improvement effects after correction, and / or cost-benefit analysis.

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