Transition metal dichalcogenide material, method for fabricating thereof, and sensor

Abstract

A method for preparing a transition metal chalcogenide material includes heating a first chalcogenide solid at a first heating temperature to form a first chalcogenide gas; introducing a reaction gas at a first plasma operating power to form a first chalcogenide plasma; placing a substrate adjacent to the first chalcogenide plasma to form a transition metal chalcogenide; heating a second chalcogenide solid at a second heating temperature to form a second chalcogenide gas; introducing a reaction gas at a second plasma operating power to form a second chalcogenide plasma; and placing a transition metal chalcogenide adjacent to the second chalcogenide plasma to form a transition metal chalcogenide material. This method facilitates the development of a sensor with high sensitivity and high selectivity.

Claims

1. A method for preparing a transition metal chalcogenide material, comprising: heating a first chalcogenide solid at a first heating temperature to form a first chalcogenide gas, wherein the first heating temperature is 110°C to 300°C; introducing a reaction gas at a first plasma operating power to assist the first chalcogenide gas in forming a first chalcogenide plasma, wherein the reaction gas comprises hydrogen, nitrogen, argon, or a combination thereof, and the first plasma operating power is 30 watts to 250 watts; disposing a substrate adjacent to the first chalcogenide plasma, the substrate comprising an underlayer and a plating layer, wherein the first chalcogenide plasma and the plating layer undergo a first deposition reaction at a first reaction temperature and a first reaction pressure to form a transition metal chalcogenide; and heating a second chalcogenide solid at a second heating temperature to form a second chalcogenide gas, wherein the second heating temperature is 150°C to 300°C. The reactant gas is introduced at a second plasma operating power to assist in the formation of a second chalcogenide plasma, wherein the second plasma operating power is 100 watts to 300 watts; and the transition metal chalcogenide compound is disposed adjacent to the second chalcogenide plasma, and the second chalcogenide plasma and the transition metal chalcogenide compound undergo a second deposition reaction at a second reaction temperature and a second reaction pressure to form a transition metal chalcogenide compound material; wherein... The coating contains a transition metal source.

2. The method for preparing a transition metal chalcogenide material as claimed in claim 1, wherein the first chalcogenide solid comprises a first chalcogenide source, and the second chalcogenide solid comprises a second chalcogenide source.

3. The method for preparing a transition metal chalcogenide material as described in claim 2, wherein the transition metal source is molybdenum, tungsten, chromium, platinum, palladium, nickel, copper, cobalt, zinc, manganese, or titanium.

4. The method for preparing a transition metal chalcogenide material as described in claim 2, wherein the first chalcogenide source is sulfur.

5. The method for preparing a transition metal chalcogenide material as described in claim 4, wherein the second chalcogenide source is selenium or tellurium.

6. The method for preparing a transition metal chalcogenide material as claimed in claim 1, wherein the first reaction temperature is from 200 degrees Celsius to 600 degrees Celsius and the first reaction pressure is from 0.01 Torr to 760 Torr.

7. The method for preparing a transition metal chalcogenide material as claimed in claim 1, wherein the second reaction temperature is from 100 degrees Celsius to 500 degrees Celsius and the second reaction pressure is from 0.01 Torr to 760 Torr.

8. A transition metal chalcogenide material, prepared by the method described in claim 1, comprising: a transition metal layer; and a chalcogenide layer covalently bonded to the transition metal layer, the chalcogenide layer comprising a first chalcogenide source and a second chalcogenide source; wherein, This transition metal chalcogenide material has a polycrystalline phase.

9. A sensor comprising: a substrate comprising a transition metal chalcogenide material as described in claim 8; and a Raman spectrometer comprising a light source emitter and a light source receiver, wherein the substrate is disposed corresponding to the light source emitter and the light source receiver.

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