Micro-electro-mechanical system package and fabrication method thereof
Patent Information
- Application Number
- TW114118901
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-05-20
- Publication Date
- 2026-09-21
- Estimated Expiration
- 2045-05-19
Smart Images

Figure TWG2TB001912236_001 
Figure TWG2TB001912236_002 
Figure TWG2TB001912236_003
Abstract
Claims
1. A microelectromechanical package, comprising: A first substrate, comprising a cavity therein; A blocking element is disposed within the cavity and integrated with the first substrate; a component layer includes a microelectromechanical component and is bonded to the first substrate. And a release opening, penetrating the element layer, corresponding to the blocking member, and disposed in the microelectromechanical component; wherein there is a gap between the blocking member and the element layer, and the gap communicates with the release opening.
2. The microelectromechanical package as described in claim 1, wherein the release opening and the blocking element overlap in a vertical projection direction.
3. The microelectromechanical package as described in claim 1, wherein the release opening includes a plurality of sub-openings separated from each other.
4. The microelectromechanical package as claimed in claim 3, wherein, in a top view, the outline of the release opening comprises a circle or a square, and the plurality of sub-openings are evenly distributed within the outline of the release opening.
5. The microelectromechanical package as claimed in claim 1, wherein the release opening is located within the boundary of the blocking member in a vertical projection direction.
6. The microelectromechanical package as claimed in claim 1 further includes a bonding layer disposed between the first substrate and the component layer, wherein the bonding layer does not extend into the cavity and onto the barrier.
7. The microelectromechanical package as described in claim 6, wherein the height of the gap is equal to the thickness of the bonding layer.
8. The microelectromechanical package as described in claim 7, wherein the release opening and the cavity are in communication with each other.
9. The microelectromechanical package as claimed in claim 1, wherein the first substrate has a front side and a back side, the barrier has a surface, the front side of the first substrate and the surface of the barrier both face the component layer and are at the same horizontal height.
10. The microelectromechanical package as claimed in claim 1, wherein the microelectromechanical component includes a mass block and the release opening is disposed in the mass block.
11. The microelectromechanical package as described in claim 1, further comprising: A second substrate; An interconnect layer is disposed on the second substrate; And a support structure, integrated with the component layer, surrounding the microelectromechanical component, protruding toward the second substrate, and bonded to the interconnect layer.
12. The microelectromechanical package as described in claim 1, wherein the microelectromechanical component includes an accelerometer, a gyroscope, or an inertial measurement unit.
13. A method for manufacturing a microelectromechanical package, comprising: Provide a first substrate; The first substrate is etched to form a cavity and a barrier, wherein the barrier is formed in the cavity and integrated with the first substrate; A bonding material layer is formed to cover the first substrate and extend into the cavity and onto the barrier; a component layer is formed on the first substrate, covering the cavity and the barrier, wherein the component layer is bonded to the first substrate through the bonding material layer; the component layer is patterned to form a microelectromechanical component and a release opening, wherein the release opening penetrates the component layer and corresponds to the barrier; And etching removes a portion of the bonding material layer located within the cavity and on the barrier to form a bonding layer, during which an etchant flows through the release opening.
14. A method of manufacturing a microelectromechanical package as claimed in claim 13, wherein removing the portion of the bonding material layer comprises a dry etching process or a wet etching process.
15. A method of manufacturing a microelectromechanical package as claimed in claim 13, wherein the etchant comprises hydrofluoric acid vapor or hydrofluoric acid solution.
16. A method of manufacturing a microelectromechanical package as claimed in claim 13, wherein the microelectromechanical component includes a mass block and the release opening is formed in the mass block.
17. A method of manufacturing a microelectromechanical package as claimed in claim 13, wherein forming the release opening includes forming a plurality of sub-openings that are separated from each other and are uniformly distributed within the outline of the release opening.
18. A method of manufacturing a microelectromechanical package as claimed in claim 13, wherein the microelectromechanical component and the release opening are simultaneously formed in the component layer by the same etching process, and the release opening exposes the bonding material layer on the barrier before removing the portion of the bonding material layer located in the cavity and on the barrier.
19. A method of manufacturing a microelectromechanical package as claimed in claim 13, wherein after removing a portion of the bonding material layer located within the cavity and on the barrier, a gap is formed between the barrier and the element layer, and the height of the gap is equal to the thickness of the bonding material layer.
20. The method of manufacturing a microelectromechanical package as described in claim 13, further comprising: Provide a second substrate; An interconnect layer is formed on the second substrate; Before patterning the element layer to form the microelectromechanical component and the release opening, a support structure is formed on the element layer, wherein the support structure protrudes toward the second substrate and surrounds the microelectromechanical component; And through the support structure, the element layer is bonded to the interconnect layer by eutectic bonding.
Citation Information
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