Joining method

Abstract

[Problem] Controlling the tilt of a substrate adsorbed onto an adsorption surface. [Solution] A substrate processing apparatus comprising: a holding unit having a circular first region and an annular second region disposed radially outward of the first region on the adsorption surface of the substrate, serving as a plurality of regions for which the adsorption pressure of the substrate adsorbed is independently controlled; a plurality of adsorption pressure generating units that independently generate adsorption pressure in each of the plurality of regions constituting the adsorption surface; a plurality of adsorption pressure adjusting units that independently adjust the adsorption pressure generated by the plurality of adsorption pressure generating units; and a control unit that controls the plurality of adsorption pressure generating units and the plurality of adsorption pressure adjusting units, wherein the control unit causes at least a portion of the first region and at least a portion of the second region to generate different adsorption pressures.

Description

[Technical Field]

[0001] This invention relates to a joining method. [Previous Technology]

[0002] The bonding device described in Patent Document 1 includes an upper clamping plate that adsorbs an upper substrate from above and a lower clamping plate that adsorbs a lower substrate from below, bonding the two substrates face to face. Specifically, the bonding device first presses down on the center portion of the substrate adsorbed on the upper clamping plate, bringing it into contact with the center portion of the substrate adsorbed on the lower clamping plate. Thereby, the center portions of the two substrates are bonded together by intermolecular forces, etc. Next, the bonding device extends the bonding area of ​​the two substrates from the center portion to the outer periphery. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2015-095579 [Summary of the Invention]

[0004] [Problem to be solved by the invention] Substrate processing apparatus such as bonding devices have a holding part for adsorbing and holding substrates. However, conventional holding parts uniformly adsorb the substrates adsorbed on the adsorption surface, and cannot control the tilt of the substrates adsorbed on the adsorption surface.

[0005] The main purpose of one of the implementation forms is to control the tilt of the substrate adsorbed onto the adsorption surface. [Method for solving the problem]

[0006] One embodiment of the bonding device includes: a holding portion having a circular first region and an annular second region disposed radially outward of the first region on the adsorption surface of the adsorption substrate, which are multiple regions for which the adsorption pressure of the adsorption substrate is independently controlled; multiple adsorption pressure generating portions that independently generate adsorption pressure in each of the multiple regions constituting the adsorption surface; multiple adsorption pressure adjusting portions that independently adjust the adsorption pressure generated by the multiple adsorption pressure generating portions; a opposing holding portion disposed opposite to the holding portion and holding a second substrate different from the first substrate to be bonded to the first substrate; and a control portion that controls the multiple adsorption pressure generating portions and the multiple adsorption pressure adjusting portions, wherein the control portion generates different adsorption pressures in at least a portion of the first region and at least a portion of the second region based on previously stored data. [Effects of the Invention]

[0007] When implementing one of the forms, the tilt of the substrate adsorbed on the adsorption surface can be controlled.

Implementation Method

[0009] Hereinafter, the embodiments for implementing the present invention will be described with reference to the drawings. In each drawing, the same or corresponding components are given the same or corresponding symbols, and the description is omitted. In the following description, the X-axis, Y-axis, and Z-axis are mutually perpendicular directions, the X-axis and Y-axis are horizontal directions, and the Z-axis is a vertical direction. The direction of rotation about the vertical axis is also referred to as the θ direction. In this specification, "below" refers to vertically below, and "above" refers to vertically above.

[0010] [Jointing System] FIG1 is a top view showing a joining system related to an embodiment. FIG2 is a side view showing a joining system related to an embodiment. FIG3 is a side view showing the state of the first substrate and the second substrate before joining related to an embodiment. The joining system 1 shown in FIG1 forms an overlapping substrate T by joining the first substrate W1 and the second substrate W2 (see FIG7(b)).

[0011] The first substrate W1 is a substrate on which multiple electronic circuits are formed on a semiconductor substrate, such as a silicon wafer or a compound semiconductor wafer. Furthermore, the second substrate W2 is a bare wafer on which no electronic circuits are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter. Additionally, electronic circuits can be formed even on the second substrate W2.

[0012] In the following, the first substrate W1 will be referred to as "upper wafer W1", the second substrate W2 as "lower wafer W2", and the overlapping substrate T as "overlapping wafer T". Furthermore, in the following, as shown in FIG3, the surface of the aforementioned wafer W1 that is bonded to the lower wafer W2 will be referred to as "bonding surface W1j", and the surface opposite to the bonding surface W1j will be referred to as "non-bonding surface W1n". Furthermore, in the following, the surface of the lower wafer W2 that is bonded to the upper wafer W1 will be referred to as "bonding surface W2j", and the surface opposite to the bonding surface W2j will be referred to as "non-bonding surface W2n".

[0013] As shown in Figure 1, the joining system 1 includes an inlet / outlet station 2 and a processing station 3. The inlet / outlet station 2 and the processing station 3 are arranged along the positive X-axis in the order of inlet / outlet station 2 and processing station 3. Furthermore, the inlet / outlet station 2 and the processing station 3 are integrally connected.

[0014] The loading / unloading station 2 includes a carrier placement stage 10 and a transport area 20. The placement stage 10 includes a plurality of placement plates 11. Each placement plate 11 holds a cassette CS1, CS2, and CS3, which are horizontally positioned to hold a plurality of wafers (e.g., 25 wafers). For example, cassette CS1 holds the upper wafer W1, cassette CS2 holds the lower wafer W2, and cassette CS3 holds the overlapping wafer T.

[0015] The transport area 20 is configured adjacent to the positive X-axis side of the mounting stage 10. A transport path 21 extending in the Y-axis direction is provided in this transport area 20, and a transport device 22 movable along the transport path 21 is provided. The transport device 22 can move not only in the Y-axis direction but also in the X-axis direction and rotate about the Z-axis, performing the transport of the upper wafer W1, lower wafer W2, and overlapping wafer T between the cassettes CS1~CS3 placed on the mounting plate 11 and the third processing block G3 of the processing station 3 (described later).

[0016] Furthermore, the number of cartridges CS1 to CS3 placed on the mounting stage 11 is not limited to that shown in the figure. Moreover, in addition to cartridges CS1, CS2, and CS3, cartridges for recycling substrates that have caused defects may also be placed on the mounting stage 11.

[0017] Processing station 3 is provided with a plurality of processing blocks equipped with various devices, such as three processing blocks G1, G2, and G3. For example, the first processing block G1 is provided on the front side of processing station 3 (the negative Y-axis side in Figure 1), and the second processing block G2 is provided on the back side of processing station 3 (the positive Y-axis side in Figure 1). Furthermore, the third processing block G3 is provided on the side of the transfer station 2 of processing station 3 (the negative X-axis side in Figure 1).

[0018] A surface modification device 30 is configured in the first processing block G1 to modify the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2. The surface modification device 30 modifies the bonding surfaces W1j and W2j by cutting the SiO2 bonds in the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2 to make them single-bonded SiO, so that they can be easily hydrophilized later.

[0019] In addition, in the surface modification apparatus 30, under a reduced pressure atmosphere, for example, the processing gas, i.e., oxygen or nitrogen, is excited and plasma-plated and ionized. Moreover, by irradiating the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2 with such oxygen or nitrogen ions, the bonding surfaces W1j and W2j are plasma-treated and modified.

[0020] A surface hydrophilization device 40 and a bonding device 41 are configured in the second processing block G2. The surface hydrophilization device 40 hydrophilizes the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2 using, for example, pure water, and cleans the bonding surfaces W1j and W2j. In the surface hydrophilization device 40, while rotating the wafer W1 or the lower wafer W2 held on, for example, a rotating chuck, pure water is supplied to the upper wafer W1 or the lower wafer W2. Accordingly, the pure water supplied to the upper wafer W1 or the lower wafer W2 diffuses on the bonding surfaces W1j and W2j of the upper wafer W1 or the lower wafer W2, and the bonding surfaces W1j and W2j are hydrophilized.

[0021] The bonding device 41 bonds the hydrophilized upper wafer W1 and lower wafer W2 by intermolecular forces. The configuration of such bonding device 41 will be described later.

[0022] In the third processing block G3, as shown in Figure 2, the transfer (TRS) devices 50 and 51 of the upper wafer W1, the lower wafer W2 and the overlapping wafer T are arranged in two layers from the bottom.

[0023] Furthermore, as shown in FIG1, a transport region 60 is formed in the area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is disposed in the transport region 60. The transport device 61 has a transport arm that can move freely in, for example, the vertical direction, the horizontal direction, and about the vertical axis. The transport device 61 moves within the transport region 60 to transport the upper wafer W1, the lower wafer W2, and the overlapping wafer T to specific devices within the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport region 60.

[0024] Furthermore, as shown in FIG1, the coupling system 1 includes a control device 70. The control device 70 controls the operation of the coupling system 1. The control device 70 is, for example, a computer, and as shown in FIG2, includes a CPU (Central Processing Unit) 71, a memory medium 72 such as memory, an input interface 73, and an output interface 74. The control device 70 performs various controls by causing the CPU 71 to execute the program stored in the memory medium 72. Furthermore, the control device 70 receives signals from the outside through the input interface 73 and sends signals to the outside through the output interface 74.

[0025] The program of the control device 70 is stored in an information storage medium and installed from the information storage medium. Examples of information storage media include hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), and memory cards. Alternatively, the program can be downloaded from a server via a network and installed.

[0026] [Jointing Device] Figure 4 is a top view showing a joining device related to one embodiment. Figure 5 is a side view showing a joining device related to one embodiment.

[0027] As shown in FIG4, the bonding device 41 has a processing container 100 capable of sealing its interior. On the side of the processing container 100 on the side of the transport area 60, an inlet and outlet 101 for the upper wafer W1, the lower wafer W2 and the overlay substrate T are formed, and a switch baffle 102 is provided in the inlet and outlet 101.

[0028] The interior of the processing container 100 is divided into a transport area T1 and a processing area T2 by an inner wall 103. The aforementioned inlet and outlet 101 is formed on the side of the processing container 100 in the transport area T1. Furthermore, inlet and outlet 104 for the upper wafer W1, the lower wafer W2, and the overlapping wafer T are also formed on the inner wall 103.

[0029] In the transport area T1, a wafer transport mechanism 111, a reversing mechanism 130 and a position adjustment mechanism 120 are arranged sequentially from, for example, the transport inlet and outlet 101 side.

[0030] The transfer section 110 temporarily holds the upper wafer W1, the lower wafer W2, and the overlapping wafer T. The transfer section 110 is formed, for example, two layers, and can simultaneously hold any two of the upper wafer W1, the lower wafer W2, and the overlapping wafer T.

[0031] As shown in Figures 4 and 5, the wafer handling mechanism 111 has a handling arm that can move freely in, for example, the vertical direction (Z-axis direction), the horizontal direction (Y-axis direction, X-axis direction), and about the vertical axis. The wafer handling mechanism 111 is located within the handling area T1 or between the handling area T1 and the processing area T2, and is capable of handling the upper wafer W1, the lower wafer W2, and the overlapping wafer T.

[0032] The position adjustment mechanism 120 adjusts the horizontal orientation of the upper wafer W1 and the lower wafer W2. Specifically, the position adjustment mechanism 120 includes: a base 121, which has a holding part (not shown) that holds the upper wafer W1 and the lower wafer W2 for rotation, and a detection part 122 that detects the position of the slot portions of the upper wafer W1 and the lower wafer W2. While rotating the wafer W1 and the lower wafer W2 held on the base 121, the position adjustment mechanism 120 uses the detection part 122 to detect the position of the slot portions of the upper wafer W1 and the lower wafer W2, and adjusts the position of the slot portions accordingly. In this way, the horizontal orientation of the upper wafer W1 and the lower wafer W2 is adjusted.

[0033] The reversing mechanism 130 reverses the front and back faces of the upper wafer W1. Specifically, the reversing mechanism 130 has a holding arm 131 for holding the first upper wafer W1. The holding arm 131 extends in the horizontal direction (X-axis direction). Furthermore, a holding member 132 for holding the upper wafer W1 is provided on the holding arm 131 at, for example, position 4.

[0034] The retaining arm 131 is supported by a drive unit 133, which includes, for example, a motor. The retaining arm 131 can rotate freely about a horizontal axis by means of the drive unit 133. Furthermore, the retaining arm 131 can rotate freely about the drive unit 133 and can move freely in the horizontal direction (X-axis direction). Below the drive unit 133, another drive unit (not shown) including, for example, a motor is provided. By means of the other drive unit, the drive unit 133 can move vertically along the support column 134 extending vertically.

[0035] In this way, the wafer W1 held on the holding member 132 can rotate about the horizontal axis by the drive unit 133, and can move in the vertical and horizontal directions. Furthermore, the wafer W1 held on the holding member 132 can rotate about the drive unit 133 and move between the position adjustment mechanism 120 and the upper chuck 140 described later.

[0036] In the processing area T2, an upper clamping plate 140 is provided to hold the upper wafer W1 from above (non-bonding surface W1n), and a lower clamping plate 141 is provided to hold the lower wafer W2 from below (non-bonding surface W2n). The lower clamping plate 141 is provided below the upper clamping plate 140, thus enabling it to be configured to face the upper clamping plate 140.

[0037] As shown in FIG5, the upper clamping plate 140 is held on the upper clamping plate holding part 150 which is provided above the upper clamping plate 140. The upper clamping plate holding part 150 is provided on the top surface of the processing container 100. The upper clamping plate 140 is fixed to the processing container 100 via the upper clamping plate holding part 150.

[0038] An upper camera unit 151 is provided in the upper clamp holding section 150, wherein the camera is held below the lower clamp 141 and above the wafer W2 (joint surface W2j). The upper camera unit 151 uses, for example, a CCD camera.

[0039] The lower clamp 141 is supported by a first lower clamp moving part 160 disposed below the lower clamp 141. The first lower clamp moving part 160, as described later, moves the lower clamp 141 in the horizontal direction (X-axis direction). Furthermore, the first lower clamp moving part 160 is configured to allow the lower clamp 141 to move freely in the vertical direction and to rotate about the vertical axis.

[0040] In the first lower chuck moving part 160, a lower camera part 161 is provided (see FIG5) on which the camera is held above the upper chuck 140 and below the wafer W1 (joint surface W1j). The lower camera part 161 uses, for example, a CCD camera.

[0041] The first lower chuck moving part 160 is disposed on the lower side of the first lower chuck moving part 160 and is mounted on a pair of tracks 162, 162 extending in the horizontal direction (X-axis direction). The first lower chuck moving part 160 is configured to move freely along the track 162.

[0042] A pair of tracks 162, 162 are disposed on the second lower chuck moving part 163. The second lower chuck moving part 163 is disposed on its lower side and is mounted on a pair of tracks 164, 164 extending in the horizontal direction (Y-axis direction). Moreover, the second lower chuck moving part 163 is configured to move freely in the horizontal direction (Y-axis direction) along the tracks 164. In addition, the pair of tracks 164, 164 are disposed on a mounting platform 165, for example, on the bottom surface of the processing container 100.

[0043] A position alignment unit 166 is constructed by means of a first lower chuck moving part 160 and a second lower chuck moving part 163. The position alignment unit 166 performs horizontal position alignment of the wafer W1 held on the upper chuck 140 and the wafer W2 held below the lower chuck 141 by moving the lower chuck 141 in the X-axis direction, the Y-axis direction, and the θ-axis direction. Furthermore, the position alignment unit 166 performs vertical position alignment of the wafer W1 held on the upper chuck 140 and the wafer W2 held below the lower chuck 141 by moving the lower chuck 141 in the Z-axis direction.

[0044] Furthermore, although the positioning alignment unit 166 in this embodiment performs horizontal positioning alignment of the upper wafer W1 and the lower wafer W2 by moving the lower clamping plate 141 in the X-axis direction, Y-axis direction, and θ direction, the present invention is not limited thereto. The positioning alignment unit 166 can move the upper clamping plate 140 and the lower clamping plate 141 relatively in the X-axis direction, Y-axis direction, and θ direction. For example, the positioning alignment unit 166 can also perform horizontal positioning alignment of the upper wafer W1 and the lower wafer W2 by moving the lower clamping plate 141 in the X-axis direction and the upper clamping plate 140 in the θ direction.

[0045] Furthermore, although the positioning alignment unit 166 in this embodiment performs vertical positioning alignment of the upper wafer W1 and the lower wafer W2 by moving the lower clamping plate 141 in the Z-axis direction, the present invention is not limited thereto. The positioning alignment unit 166 can simply move the upper clamping plate 140 and the lower clamping plate 141 relative to each other in the Z-axis direction. For example, the positioning alignment unit 166 can also perform vertical positioning alignment of the upper wafer W1 and the lower wafer W2 by moving the upper clamping plate 140 in the Z-axis direction.

[0046] Figure 6 is a cross-sectional view of the upper and lower chucks related to an embodiment, showing the state before the upper and lower wafers are to be joined. Figure 7(a) shows a cross-sectional view of the state during the joining of the upper and lower wafers related to an embodiment. Figure 7(b) shows a cross-sectional view of the state when the joining of the upper and lower wafers related to an embodiment is completed. In Figures 6, 7(a) and 7(b), the arrows indicated by solid lines indicate the direction of air suction by the vacuum pump.

[0047] The upper clamp 140 and the lower clamp 141 are, for example, vacuum clamps. The upper clamp 140 corresponds to the holding portion described in the claims, and the lower clamp 141 corresponds to the opposing holding portion described in the claims. The upper clamp 140 has an adsorption surface 140a for adsorbing the upper wafer W1 on the surface facing (underside) opposite to the lower clamp 141. In addition, the lower clamp 141 has an adsorption surface 141a for adsorbing the lower wafer W2 on the surface facing (overside) opposite to the upper clamp 140.

[0048] The upper chuck 140 has a chuck base 170. The chuck base 170 has a diameter that is the same as or larger than that of the upper wafer W1. The chuck base 170 is supported by a support member 180. The support member 180 is configured to at least cover the chuck base 170 in plan view and is fixed to the chuck base 170 by means of, for example, screws. The support member 180 is supported on a plurality of support posts 181 provided on the top surface of the processing container 100 (see Figure 5). The support member 180 and the plurality of support posts 181 constitute the upper clamp holding portion 150.

[0049] A through hole 176 is formed in the support member 180 and the chuck base 170, penetrating both in the vertical direction. The position of the through hole 176 corresponds to the center of the wafer W1 held on the upper chuck 140. A push pin 191 of the hammer 190 is inserted into such a through hole 176.

[0050] The hammer 190 is disposed on the support member 180 and includes a push pin 191, an actuator part 192 and a direct-acting mechanism 193. The push pin 191 is a cylindrical member extending in the vertical direction and is supported by the actuator part 192.

[0051] The actuator section 192 generates a certain pressure in a certain direction (here, vertically downward) by air supplied from, for example, an electric air conditioner (not shown). The actuator section 192, by contacting the center of the upper wafer W1 with the air supplied from the electric air conditioner, can control the pushing load applied to the center of the upper wafer W1. Furthermore, the front end of the actuator section 192, by passing through the through hole 176 with air from the electric air conditioner, can move freely up and down in the vertical direction.

[0052] The actuator section 192 is supported by the direct drive mechanism 193. The direct drive mechanism 193 moves the actuator section 192 in the vertical direction by means of a drive section built in, for example, a motor.

[0053] The hammer 190 is configured as described above, and the movement of the actuator 192 is controlled by the direct-acting mechanism 193, and the upper wafer W1 is pushed by the push pin 191 by the actuator 192.

[0054] The hammer 190 presses against the wafer W1 held above the upper chuck 140 and the wafer W2 held below the lower chuck 141. Specifically, the hammer 190 presses against the lower wafer W2 by deforming the wafer W1 held above the upper chuck 140.

[0055] A plurality of pins 171 are provided below the chuck base 170, which contact the non-bonding surface W1n of the upper wafer W1. The chuck base 170, the plurality of pins 171, etc., constitute the upper chuck 140. The adsorption surface 140a of the wafer W1 adsorbed on the upper chuck 140 is divided into a plurality of regions in the radial direction, and in each region, adsorption force is generated and adsorption force is released.

[0056] Furthermore, the lower clamp 141 may be configured to be the same as the upper clamp 140. The lower clamp 141 has a plurality of pins 204 that contact the non-bonding surface W2n of the lower wafer W2. The adsorption surface 141a of the lower wafer W2 held by the lower clamp 141 is radially divided into a plurality of regions, and in each region, adsorption force is generated and adsorption force is released.

[0057] [Joining Method] Figure 8 is a flowchart showing a portion of the processing performed by a joining system related to an embodiment. Furthermore, the various processes shown in Figure 8 are performed under the control of a control device 70.

[0058] First, a cassette CS1 containing multiple upper wafers W1, a cassette CS2 containing multiple lower wafers W2, and an empty cassette CS3 are placed on a specific mounting plate 11 in the loading / unloading station 2. Then, the upper wafers W1 in the cassette CS1 are removed by the transport device 22 and transported to the transfer device 50 of the third processing block G3 in the processing station 3.

[0059] Next, the upper wafer W1 is transported by the transport device 61 to the surface modification device 30 of the first processing block G1. In the surface modification device 30, under a specific reduced pressure atmosphere, for example, the processing gas, i.e., oxygen, is excited, plasma-entrained, and ionized. The oxygen ions are irradiated onto the bonding surface W1j of the upper wafer W1, and the bonding surface W1j is plasma-treated. Accordingly, the bonding surface W1j of the upper wafer W1 is modified (step S101).

[0060] Next, the upper wafer W1 is transported by the transport device 61 to the surface hydrophilization device 40 of the second processing block G2. In the surface hydrophilization device 40, while the wafer W1 held on the rotating chuck is rotated, pure water is supplied to the first substrate W1. In this way, the supplied pure water diffuses on the bonding surface W1j of the upper wafer W1, and hydroxyl groups (silanols) are attached to the bonding surface W1j of the upper wafer W1 that has been modified by the surface modification device 30, and the bonding surface W1j is hydrophilized (step S102). Furthermore, the bonding surface W1j of the upper wafer W1 is cleaned by the pure water used for hydrophilization of the bonding surface W1j.

[0061] Next, the upper wafer W1 is transported to the bonding device 41 of the second processing block G2 by the transport device 61. The upper wafer W1, which has been placed on the bonding device 41, is transported to the position adjustment mechanism 120 by the wafer transport mechanism 111 via the transfer unit 110. Moreover, the horizontal orientation of the upper wafer W1 is adjusted by the position adjustment mechanism 120 (step S103).

[0062] Subsequently, the upper wafer W1 is received from the position adjustment mechanism 120 to the holding arm 131 of the reversing mechanism 130. Then, in the transport area T1, by reversing the holding arm 131, the front and back surfaces of the upper wafer W1 are reversed (step S104). That is, the mating surface W1j of the upper wafer W1 faces downward.

[0063] Subsequently, the holding arm 131 of the reversing mechanism 130 rotates and moves downward toward the upper chuck 140. Moreover, the upper wafer W1 is received from the reversing mechanism 130 onto the upper chuck 140. The upper wafer W1 is held on the upper chuck 140 with its notch facing a predetermined direction (step S105).

[0064] While the upper wafer W1 is being processed by the above steps S101 to S105, the lower wafer W2 is processed. First, the lower wafer W2 is taken out of the cassette CS2 by the transport device 22 and transported to the transfer device 50 of the processing station 3.

[0065] Next, the lower wafer W2 is transported to the surface modification device 30 by the transport device 61, and the bonding surface W2j of the lower wafer W2 is modified (step S106). In addition, the modification of the bonding surface W2j of the wafer W2 under step S106 is the same as that in step S101 above.

[0066] Next, the lower wafer W2 is transported to the surface hydrophilization device 40 by the transport device 61, and the bonding surface W2j of the lower wafer W2 is hydrophilized (step S107). Furthermore, the bonding surface W2j is cleaned by using pure water for hydrophilization. In addition, the hydrophilization of the bonding surface W2j of the wafer W2 in step S107 is the same as the hydrophilization of the bonding surface W1j of the wafer W1 in step S102 above.

[0067] Subsequently, the lower wafer W2 is transported to the bonding device 41 by the transport device 61. The lower wafer W2, which has been transported into the bonding device 41, is then transported to the position adjustment mechanism 120 via the transfer unit 110 and the wafer transport mechanism 111. Furthermore, the position adjustment mechanism 120 adjusts the horizontal orientation of the lower wafer W2 (step S108).

[0068] Subsequently, the lower wafer W2 is transported to the lower chuck 141 by the wafer transport mechanism 111 and held therein (step S109). The lower wafer W2 is positioned with its slot opening facing a predetermined direction, which is the same direction as the slot opening of the upper wafer W1, and its non-joint surface W2n is held therein by the lower chuck 141.

[0069] Next, the horizontal position of the wafer W1 held above the upper chuck 140 and the wafer W2 held below the lower chuck 141 is adjusted (step S110). Specifically, the horizontal position (including the X-axis position, Y-axis position and θ-axis position) is adjusted so that, when viewed in the vertical direction, the plurality of alignment marks formed on the bonding surface W1j of the upper wafer W1 and the plurality of alignment marks formed on the bonding surface W2j of the lower wafer W2 overlap.

[0070] Next, the vertical positions of the wafer W1 held on the upper chuck 140 and the wafer W2 held on the lower chuck 141 are adjusted (step S111). Specifically, the lower chuck 141 is moved vertically upward by the first lower chuck moving part 160, so that the lower wafer W2 is close to the upper wafer W1. Accordingly, as shown in FIG6, the distance S between the mating surface W2j of the lower wafer W2 and the mating surface W1j of the upper wafer W1 is adjusted to a specific distance, for example, 50μm to 200μm.

[0071] Next, after releasing the hold of the upper wafer W1 by the upper clamp 140 (step S112), as shown in FIG7(a), the center of the upper wafer W1 is pressed down by lowering the push pin 191 of the hammer 190 (step S113). When the center of the upper wafer W1 contacts the center of the lower wafer W2, and the center of the upper wafer W1 and the center of the lower wafer W2 are pressed with a specific force, the center of the upper wafer W1 and the center of the lower wafer W2 begin to join together. Afterwards, a joining wave is generated that slowly joins the upper wafer W1 and the lower wafer W2 from the center toward the outer periphery.

[0072] Here, since the bonding surfaces W1j of the upper wafer W1 and W2j of the lower wafer W2 are modified in steps S101 and S106 respectively, Van der Waals forces (intermolecular forces) are first generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are bonded. Here, since the bonding surfaces W1j of the upper wafer W1 and W2j of the lower wafer W2 are hydrophilized in steps S102 and S107 respectively, hydrogen bonds are first generated between the hydrophilic groups of the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are firmly bonded.

[0073] Subsequently, while the center portions of the upper wafer W1 and the lower wafer W2 are pressed together by the push pin 191, the upper wafer W1 is released from its holding position by the upper chuck 140 (step S114). Thus, as shown in FIG7(b), the mating surfaces W1j of the upper wafer W1 and W2j of the lower wafer W2 are fully abutted, and the upper wafer W1 and the lower wafer W2 are joined. Afterwards, the push pin 191 is raised to the upper chuck 140, releasing the lower wafer W2 from its holding position by the lower chuck 141.

[0074] Subsequently, the overlapping substrate T is transported by the transport device 61 to the transfer device 51 of the third processing block G3, and then transported by the transport device 22 of the transfer station 2 to the cartridge CS3. In this way, a series of bonding processes are completed.

[0075] [Controlling the skew of the lower wafer caused by the lower chuck] Figure 9 is a diagram showing the lower chuck, vacuum pump, and vacuum regulator in relation to one embodiment. In Figure 9, the horizontal angle of the adsorption surface 141a of the lower chuck 141 and the orientation index of the lower wafer W2 (see Figure 6) when it is adsorbed on its adsorption surface 141a are shown. In addition, the surface index of the bonding surface W2j of the lower wafer W2 is (100). The Miller index used as the orientation index or surface index is negative and is usually represented by a "-" (bar) on the number. In this specification, it is represented by a negative symbol before the number. In addition, the illustration of the pin 204 is omitted in Figure 9 for easy viewing.

[0076] As shown in FIG6, the lower clamp 141 has an annular second region 220 disposed on the adsorption surface 141a of the lower wafer W2, which is arranged in a circular first region 210 and radially outward of the first region 210. These regions are multiple regions in which the adsorption pressure (e.g., vacuum pressure) of the lower wafer W2 is independently controlled. For example, the lower clamp 141 has an inner peripheral rib 201 dividing the first region 210 and the second region 220 on the adsorption surface 141a, and an outer peripheral rib 202 disposed on the radially outward of the second region 220.

[0077] The inner peripheral rib 201 and the outer peripheral rib 202 are concentrically arranged protruding above the chuck base 203. A plurality of pins 204, at the same height as the inner peripheral rib 201 or the outer peripheral rib 202, are distributed and protruding above the chuck base 203. The inner peripheral rib 201, the outer peripheral rib 202, and the plurality of pins 204 have the same height, keeping the lower wafer W2 horizontal.

[0078] Furthermore, the lower clamp 141 has a plurality of annular regions 221, 222 formed by radially dividing the second region 220, which are multiple regions for independently controlling the adsorption pressure of the lower wafer W2. For example, the lower clamp 141 has an annular intermediate rib 205 on the adsorption surface 141a that divides the annular region 221 on the outer side in the radial direction and the annular region 222 on the inner side in the radial direction. The intermediate rib 205 is configured to be concentric with the inner peripheral rib 201 or the outer peripheral rib 202. The intermediate rib 205 has the same height as the inner peripheral rib 201 or the outer peripheral rib 202, and together with the inner peripheral rib 201 or the outer peripheral rib 202, it keeps the lower wafer W2 horizontal.

[0079] Furthermore, as shown in FIG. 9, the lower clamp 141 has a plurality of arcuate regions A1 and A2 formed by dividing the outer periphery of the second region 220 in the circumferential direction (i.e., the outermost radial annular region 221), which serve as a plurality of regions where the adsorption pressure of the lower wafer W2 is independently controlled. The two arcuate regions A1 and A2 are arranged repeatedly in the circumferential direction, for example, four of each. For example, the lower clamp 141 has dividing ribs 206 on the adsorption surface 141a that divide the two arcuate regions A1 and A2. A plurality of dividing ribs 206 are arranged radially (e.g., eight). The dividing ribs 206 have the same height as the inner circumferential ribs 201 or the outer circumferential ribs 202, and together with the inner circumferential ribs 201 or the outer circumferential ribs 202, they keep the lower wafer W2 horizontal. A plurality of pins 204 are distributed and arranged in each arcuate region A1 and A2.

[0080] Furthermore, the lower clamp 141 has a plurality of arcuate regions B1 and B2 formed by dividing a radially inner annular region 222 in the circumferential direction, which serve as a plurality of regions for independently controlling the adsorption pressure of the lower wafer W2. The two arcuate regions B1 and B2 are arranged repeatedly in the circumferential direction, for example, four of each. For example, the lower clamp 141 has dividing ribs 207 on the adsorption surface 141a that divide the two arcuate regions B1 and B2. A plurality of dividing ribs 207 are arranged radially (for example, eight). The dividing ribs 207 have the same height as the inner circumferential rib 201 or the outer circumferential rib 202, and together with the inner circumferential rib 201 or the outer circumferential rib 202, they keep the lower wafer W2 horizontal. A plurality of pins 204 are distributed and arranged in each arcuate region B1 and B2.

[0081] The bonding device 41 includes, for example, multiple vacuum pumps 231-234 and 241, which serve as multiple adsorption pressure generating units that generate adsorption pressure in each of the multiple regions constituting the adsorption surface 141a of the lower clamp 141. Furthermore, the bonding device 41 includes, for example, multiple vacuum regulators 251-254 and 261, which serve as multiple adsorption pressure adjusting units that independently adjust the adsorption pressure generated by the multiple vacuum pumps 231-234 and 241.

[0082] A vacuum pump 231 is connected to four arcuate regions A1 via piping with a vacuum regulator 251 installed along the way (in Figure 9, only the piping connected to one arcuate region A1 is shown). Similarly, a vacuum pump 232 is connected to four arcuate regions A2 via piping with a vacuum regulator 252 installed along the way (in Figure 9, only the piping connected to one arcuate region A2 is shown). Furthermore, a vacuum pump 233 is connected to four arcuate regions B1 via piping with a vacuum regulator 253 installed along the way (in Figure 9, only the piping connected to one arcuate region B1 is shown). Similarly, a vacuum pump 234 is connected to four arcuate regions B2 via piping with a vacuum regulator 254 installed along the way (in Figure 9, only the piping connected to one arcuate region B2 is shown). Furthermore, a vacuum pump 241 is connected to the first region 210 via a piping system that includes a vacuum regulator 261.

[0083] When the control device 70 activates a vacuum pump 231, the vacuum pump 231 generates vacuum pressure in four arc-shaped regions A1. This vacuum pressure is maintained by the vacuum regulator 251 at a preset value, generating adsorption pressure in the four arc-shaped regions A1 corresponding to the preset value. The setting value of the vacuum regulator 251 can be changed by the control device 70, and can be set within a range of, for example, -80 kPa to -5 kPa, based on atmospheric pressure. Furthermore, when the control device 70 stops the operation of the vacuum pump 231, the four arc-shaped regions A1 return to atmospheric pressure, releasing the adsorption pressure generated in the four arc-shaped regions A4. Since the generation and release of adsorption pressure in other arc-shaped regions A2, B1, B2, and the first region 210 are the same as those in arc-shaped region A1, their descriptions are omitted.

[0084] The coupling device 41 of this embodiment includes a control device 70 for controlling a plurality of vacuum pumps 231-234, 241 and a plurality of vacuum regulators 251-254, 261. Although the control device 70 is provided outside the coupling device 41 in FIG1, it may be provided as part of the coupling device 41. The control device 70 corresponds to the control unit described in the claims of the patent application.

[0085] The control device 70 of this embodiment generates different adsorption pressures simultaneously in at least a portion of the first region 210 (e.g., the entire first region 210) and at least a portion of the second region 220 (e.g., arcuate region A2 and arcuate region B1). This allows control over the radial distribution of the adsorption pressure generated on the adsorption surface 141a, and also controls the skewness of the wafer W2 adsorbed below the adsorption surface 141a.

[0086] It is acceptable for either the adsorption pressure generated in the first region 210 or the adsorption pressure generated in the arc region A2 and the arc region B1 to be larger, or for either to be smaller. Furthermore, although the adsorption pressure generated in the first region 210 and the adsorption pressure generated in the arc region A1 and the arc region B2 are the same in this embodiment, it is acceptable for either to be larger or smaller. Moreover, it is acceptable for no adsorption pressure to be generated when the wafer W2 is adsorbed on the adsorption surface 141a in the arc regions A1 and B2. That is, although in this embodiment, adsorption pressure is generated simultaneously on the entire adsorption surface 141a when the wafer W2 is adsorbed, it is acceptable for only a portion of the adsorption surface 141a to generate adsorption pressure.

[0087] By means of this embodiment, while controlling the skew generated on the lower wafer W2, the bonding skew of the lower wafer W2 and the upper wafer W1 can be reduced by bonding the lower wafer W2 and the upper wafer W1. The bonding skew is expressed as the magnitude of the residual positional offset when, for example, the upper wafer W1 and the lower wafer W2 are moved relatively parallel, rotated, or similarly stretched, so that the positional offset of the plurality of alignment marks formed on the upper wafer W1 and the plurality of alignment marks formed on the lower wafer W2 is minimized in top view. The bonding skew is measured by repeatedly changing the setting of the adsorption pressure, bonding according to the changed setting, and measuring the bonding skew after bonding until the bonding skew falls within the allowable range. Even if the change of the distribution of adsorption pressure is based on previously stored multiple data, it is acceptable. Data that shows the relationship between the setting (or actual performance) of adsorption pressure and bonding skew can be read and used from the information memory medium.

[0088] Through careful research, the inventors have identified one cause of the bonding misalignment as the anisotropy of the Young's coefficient and other physical properties of the lower wafer W2. The Young's coefficient and other physical properties of the lower wafer W2 vary periodically in the circumferential direction. The bonding misalignment caused by this variation becomes more pronounced from the radially inner side of the lower wafer W2 towards the radially outer side. This is because the distance in the circumferential direction, for example, in the [0-11] direction and the

[001] direction, becomes increasingly separated from the radially inner side of the lower wafer W2 towards the radially outer side.

[0089] Therefore, the control device 70 of this embodiment causes different adsorption pressures to be generated simultaneously in a portion of the second region 220 (e.g., arcuate region A1 and arcuate region B2) located radially outside the first region 210 and in another portion of the second region 220 (e.g., arcuate region A2 and arcuate region B1). In this way, skewness of the lower wafer W2 can be controlled in the second region 220, which is offset from the center of the lower wafer W2.

[0090] Even if the adsorption pressure generated in arc region A1 and arc region B2 is larger than the adsorption pressure generated in arc region A2 and arc region B1, it is acceptable for either one to be smaller. Furthermore, although the adsorption pressure generated in arc region A1 and arc region B2 are the same in this embodiment, it is acceptable for either one to be larger or smaller. Similarly, although the adsorption pressure generated in arc region A2 and arc region B1 are the same in this embodiment, it is acceptable for either one to be larger or smaller.

[0091] The control device 70 of this embodiment generates different adsorption pressures simultaneously in at least a portion of the radially outer annular region 221 (e.g., arcuate region A1) and at least a portion of the radially inner annular region 222 (e.g., arcuate region B1) among the plurality of annular regions 221 and 222 formed by radially dividing the second region 220. In this way, the skewness on the lower wafer W2 generated according to the radial distance from the center of the lower wafer W2 can be controlled.

[0092] The control device 70 of this embodiment independently controls the adsorption pressure in adjacent arc regions (here, arc regions A1 and A2 contained in the outermost annular region 221) among the plurality of arc regions formed by dividing the outer periphery of the second region 220 in the circumferential direction, and simultaneously generates different adsorption pressures. Because the physical properties such as the Young's coefficient of the lower wafer W2 change periodically in the circumferential direction, the adhesion misalignment caused by this change is most obvious at the outer periphery of the lower wafer W2.

[0093] Similarly, the control device 70 can independently control the adsorption pressure in adjacent arc regions (e.g., arc region B1 and arc region B2) within the plurality of arc regions formed by dividing the remaining annular region (here, the radially inner annular region 222) in the circumferential direction, and can also generate different adsorption pressures simultaneously. The skewness of the lower wafer W2 can be controlled not only in the radially outer annular region 221, but also in the radially inner annular region 222. This is particularly effective when the diameter of the lower wafer W2 is large.

[0094] However, the Young's coefficient, Poisson's ratio, and shear elastic modulus of monocrystalline silicon wafers vary in a 90° period. The directions within a 90° period based on the [0-11] direction (0° direction) (0° direction) are collectively referred to as the "0° reference 90° period direction". Furthermore, the directions within a 90° period based on the [0-10] direction (45° direction) (45° direction, 135° direction, 225° direction, and 315° direction) are collectively referred to as the "45° reference 90° period direction". The Young's coefficient of monocrystalline silicon wafers is highest in the 0° reference 90° period direction and lowest in the 45° reference 90° period direction. Furthermore, the Poisson's ratio and shear elastic modulus are highest in the 45° reference 90° period direction and lowest in the 0° reference 90° period direction.

[0095] Therefore, in the case where the lower wafer W2 is a single-crystal silicon wafer, as shown in Figure 9, an arc region A1 is arranged in the 90° periodic direction based on 0°, and an arc region A2 is arranged in the 90° periodic direction based on 45°. That is, the two arc regions A1 and A2, whose adsorption pressure is independently controlled, are arranged repeatedly in the circumferential direction, for example, four of each.

[0096] Similarly, in the case where the lower wafer W2 is a single-crystal silicon wafer, as shown in Figure 9, an arc region B1 is arranged in the 90° periodic direction based on 0°, and an arc region B2 is arranged in the 90° periodic direction based on 45°. That is, the two arc regions B1 and B2, whose adsorption pressure is independently controlled, are arranged repeatedly in the circumferential direction, for example, four of each.

[0097] Furthermore, although the control device 70 of this embodiment generates different adsorption pressures simultaneously in a plurality of arc regions with the same angle (e.g., arc region A1 and arc region B1, or arc region A2 and arc region B2), the present invention is not limited thereto. For example, the control device 70 may also generate different adsorption pressures in a plurality of arc regions with different angles (e.g., arc region A1 and arc region B2, or arc region A2 and arc region B1).

[0098] [Modifications and Improvements] Although the above description focuses on embodiments of the substrate processing apparatus and substrate processing method, the present invention is not limited to the above embodiments and can be modified and improved in various ways within the scope of the spirit of the present invention as described in the claims.

[0099] Although the control device 70 in the above embodiment generates different adsorption pressures simultaneously in adjacent arc regions B1 and B2, the present invention is not limited thereto. The control device 70 can generate the same adsorption pressure in adjacent arc regions B1 and B2. In this case, since the radially inner annular region 222 does not need to be divided into multiple arc regions B1 and B2 in the circumferential direction, it can be constituted by only one annular region B, as shown in FIG10. The annular region B is connected to a vacuum pump 233 via a pipe with a vacuum regulator 253 installed along its path. Since the adsorption pressure generated and released in the annular region B is the same as the adsorption pressure generated and released in the arc region A1, its description is omitted.

[0100] Although the radially outer annular region 221 and the radially inner annular region 222 in the above embodiment are divided into the same number in the circumferential direction, it is also acceptable to divide them into different numbers in the circumferential direction. As shown in FIG11, it is acceptable even if the number of divisions of the radially outer annular region 221 is greater than the number of divisions of the radially inner annular region 222. This is because the closer to the radially outer side from the radially inner side of the lower wafer W2, the easier it is for the bonding misalignment to occur.

[0101] As shown in Figure 11, the lower chuck 141 has three arcuate regions A1, A2, and A3 formed by dividing a radially outer annular region 221 in the circumferential direction. These are multiple regions where the adsorption pressure is independently controlled. The arcuate region A3 is positioned between the arcuate region A1, which is positioned in a 90° periodic direction based on 0°, and the arcuate region A2, which is positioned in a 90° periodic direction based on 45°. In this way, the adsorption pressure distribution in the circumferential direction of the lower wafer W2 can be controlled with greater precision.

[0102] As shown in Figure 11, even if the dividing lines (e.g., dividing ribs 206) that divide the radially outer annular region 221 into a plurality of circular arc regions A1, A2, A3 in the circumferential direction, and the dividing lines (e.g., dividing ribs 207) that divide the radially inner annular region 222 into a plurality of circular arc regions B1, B2 in the circumferential direction, are deviated in the circumferential direction, it is possible to deviate the circumferential direction at the points where the adsorption pressure changes discontinuously in the radially outer annular region 221 and at the points where the adsorption pressure changes discontinuously in the radially inner annular region 222.

[0103] As shown in Figure 11, the four arc regions A3 are connected to a vacuum pump 235 via a pipe with a vacuum regulator 255 installed along the way (in Figure 11, only the pipe connected to one arc region A3 is shown). Since the adsorption pressure generated and desorbed in the annular region A3 is the same as that generated and desorbed in the arc region A1, the explanation is omitted.

[0104] Although the upper clamp 141 shown in Figures 9-11 has two annular regions 221 and 222 formed by radially dividing the second region 220, which are multiple regions whose adsorption pressure is independently controlled, the number of annular regions is not limited to two. The number of annular regions may be even one (that is, the second region 220 may not be divided), and the number of annular regions may be even three or more.

[0105] Figure 12 is a diagram showing the lower clamp, vacuum pump and vacuum regulator in relation to the third modification. The lower clamp 141 in the modification shown in Figure 12 has four annular regions 221, 222, 223 and 224 formed by radially dividing the second region 220, which are multiple regions where the adsorption pressure is independently controlled.

[0106] The first annular region 221, counting from the radial outer edge, is composed of two circular arc regions A1 and A2 that are arranged alternately and repeatedly in the circumferential direction. The adsorption pressure of the two adjacent circular arc regions A1 and A2 is independently controlled. Similarly, the second annular region 222, counting from the radial outer edge, is composed of two circular arc regions B1 and B2 that are arranged alternately and repeatedly in the circumferential direction. The adsorption pressure of the two adjacent circular arc regions B1 and B2 is independently controlled.

[0107] Furthermore, the third annular region 223, counting from the radially outer side, is composed of two circular arc regions C1 and C2 that are arranged alternately and repeatedly in the circumferential direction. The adsorption pressure of two adjacent circular arc regions C1 and C2 is independently controlled. A vacuum pump 235 is connected to the four circular arc regions C1 via a pipe with a vacuum regulator 255 installed along the way (in Figure 12, only the pipe connected to one circular arc region C1 is shown). A vacuum pump 236 is connected to the four circular arc regions C2 via a pipe with a vacuum regulator 256 installed along the way (in Figure 12, only the pipe connected to one circular arc region C2 is shown). Since the adsorption pressure generated and desorbed in the circular arc regions C1 and C2 is the same as that generated and desorbed in the circular arc region A1, the description is omitted.

[0108] Furthermore, the fourth annular region 224, counting from the radially outer side, is composed of two circular arc regions D1 and D2 arranged alternately and repeatedly in the circumferential direction. The adsorption pressure of two adjacent circular arc regions D1 and D2 is independently controlled. A vacuum pump 237 is connected to the four circular arc regions D1 via a pipe with a vacuum regulator 257 installed along the way (in Figure 12, only the pipe connected to one circular arc region D1 is shown). A vacuum pump 238 is connected to the four circular arc regions D2 via a pipe with a vacuum regulator 258 installed along the way (in Figure 12, only the pipe connected to one circular arc region D2 is shown). Since the adsorption pressure generated and desorbed in the annular regions D1 and D2 is the same as that generated and desorbed in the circular arc region A1, the description is omitted.

[0109] Furthermore, in the modified example shown in FIG12, the lower clamp 141 has two annular regions 211 and 212 and a circular region 213 formed by radially dividing the first region 210, which are multiple regions where the adsorption pressure is independently controlled. The radially outer annular region 211 and the radially inner annular region 212 are separated by annular ribs. Furthermore, the radially inner annular region 212 and the circular region 213 are separated by annular ribs. The annular ribs disposed inside the first region 210 are formed concentrically with the inner circumferential ribs 201 or outer circumferential ribs 202 shown in FIG9, etc. The annular ribs disposed inside the first region 210 have the same height as the pin 204, and together with the pin 204, etc., keep the lower circle W2 horizontal. Furthermore, in this modified example, the two regions 211 and 212 and the circular region 213 correspond to the segmented regions described in the claims.

[0110] The first annular region 211, measured radially outward from the first region 210, is connected to a vacuum pump 241 via a pipe with a vacuum regulator 261 installed along its length. Furthermore, the second annular region 212, measured radially outward from the first region 210, is connected to a vacuum pump 242 via a pipe with a vacuum regulator 262 installed along its length. And, the third circular region 213, measured radially outward from the first region 210, is connected to a vacuum pump 243 via a pipe with a vacuum regulator 263 installed along its length. Since the adsorption pressure generated and released in the annular regions 211, 212, and circular region 213 is the same as the adsorption pressure generated and released in the circular region A1, further explanation is omitted.

[0111] In this modified example, the control device 70 causes two adjacent segmented regions (e.g., the radially outer annular region 211 and the radially inner annular region 212, and / or the radially inner annular region 212 and the circular region 213) to simultaneously generate different adsorption pressures. In this way, the skewness near the center of the lower wafer W2, which is pushed by the push pin 191 of the hammer 190, can be controlled.

[0112] Furthermore, although the number of annular regions constituting the first region 210 is two in Figure 12, it is acceptable to have only one, or even three or more. Moreover, the annular regions constituting the first region 210 (e.g., annular region 211) are the same as the annular regions constituting the second region 220 (e.g., annular region 221), and can be divided into multiple regions in the circumferential direction.

[0113] Although the wafer W2 is vacuum-adsorbed by the chuck 141 in the above embodiments and variations, electrostatic adsorption is also possible. In this case, the adsorption pressure generating unit includes an internal electrode embedded inside the lower chuck 141. Furthermore, the adsorption pressure adjusting unit includes, for example, a power adjusting unit that adjusts the power supplied to the internal electrode. The power adjusting unit is composed of, for example, a buck DC / DC converter or a boost DC / DC converter.

[0114] In the above embodiments and variations, although the skewness of the wafer W2 held below the lower chuck 141 is controlled, the skewness of the wafer W1 held above the upper chuck 140 can also be controlled. That is, the present invention can be applied to the upper chuck 140, and the lower chuck 141 can correspond to the opposing holding portion as described in the claims. Furthermore, the present invention can be applied to both the upper chuck 140 and the lower chuck 141. Moreover, the present invention can be applied to devices other than the bonding device 41, such as a cutting device. If the present invention is for a device having a holding portion for holding a substrate, it can be applied. [Simplified Explanation of the Diagram]

[0008] Figure 1 is a top view showing a bonding system related to one embodiment. Figure 2 is a side view showing a bonding system related to one embodiment. Figure 3 is a side view showing the state of the first substrate and the second substrate related to one embodiment before bonding. Figure 4 is a top view showing a bonding apparatus related to one embodiment. Figure 5 is a side view showing a bonding apparatus related to one embodiment. Figure 6 is a cross-sectional view showing the upper and lower chucks related to one embodiment, showing the state before bonding after the upper and lower wafers are aligned. Figure 7 is a cross-sectional view showing the gradual bonding of the upper and lower wafers related to one embodiment from the center towards the outer periphery. Figure 8 is a flowchart showing a part of the processing performed by the bonding system related to one embodiment. Figure 9 is an illustration showing the lower chuck, vacuum pump, and vacuum regulator related to one embodiment. Figure 10 is an illustration showing the lower chuck, vacuum pump, and vacuum regulator related to the first modified example. Figure 11 is a diagram showing the clamp, vacuum pump, and vacuum regulator in relation to the second modification. Figure 12 is a diagram showing the clamp, vacuum pump, and vacuum regulator in relation to the third modification.

Claims

1. A bonding method comprising generating adsorption pressure on an adsorption surface of an adsorption substrate to adsorb the substrate, and bonding the substrate adsorbed on the adsorption surface and a second substrate different from the substrate, wherein the bonding method is characterized by independently controlling the adsorption pressure generated in a circular first region constituting the adsorption surface and an annular second region disposed radially outside the first region, and generating different adsorption pressures in at least a portion of the first region and at least a portion of the second region, repeatedly changing the setting of the adsorption pressure, bonding according to the changed setting, and measuring the bonding skew after bonding until the bonding skew falls within an allowable range.

2. The bonding method as described in claim 1, wherein the aforementioned bonding misalignment is expressed as the magnitude of the residual positional offset when the relative parallel movement, rotational movement, and similar stretching of the second substrate and the aforementioned substrate are minimized in a top view, thereby minimizing the positional offset of the plurality of alignment marks formed on the second substrate and the plurality of alignment marks formed on the aforementioned substrate.

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