Detection method of multi-junction optoelectronic components

Abstract

A testing method for multi-junction optoelectronic components is disclosed to address the problems of numerous and time-consuming testing items in conventional multi-junction optoelectronic component testing. The method includes: preparing a device under test (DUT) having a multilayer cascaded structure of materials with different bandgap lengths; measuring the overall power conversion efficiency (EPE) of the DUT; inspecting the appearance of the DUT; detecting and analyzing the spectra of several emission images of each layer of the DUT; comparing the reflectance spectrum of the DUT; measuring the dark current of the DUT; measuring the electrical properties of one of the bypass diodes of the DUT; and detecting the thermal image of the DUT. This method improves testing efficiency and enables more accurate defect screening.