Image sensor module
Patent Information
- Application Number
- TW114135011
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2025-09-05
- Filing Date
- 2025-09-11
- Publication Date
- 2026-09-21
- Estimated Expiration
- 2045-09-10
Smart Images

Figure TWG2TB001912418_001 
Figure TWG2TB001912418_002 
Figure TWG2TB001912418_003
Abstract
Claims
1. An image sensor module, comprising: Integrated circuit board; An image sensing chip is disposed on an upper surface of an integrated circuit board and includes an image sensing area and a non-image sensing area; a cover plate is disposed above the image sensing area and the non-image sensing area of the image sensing chip; a dam is disposed between a lower surface of the cover plate and the non-image sensing area of the upper surface of the image sensing chip; a lead pad is disposed on the upper surface of the integrated circuit board; a solder pad is disposed on the upper surface of the image sensing chip; a metal wire has its two ends connected to the lead pad and the solder pad, respectively; and an isolation layer has its two opposite sides connected to the image sensing chip and an encapsulation material, respectively; an insulating layer is disposed on the upper surface of the image sensing chip and is located between the solder pad and the encapsulation material so that the metal wire does not contact the upper surface of the image sensing chip; wherein the encapsulation material covers a periphery of the cover plate, a periphery of the dam, a periphery of the metal wire, a periphery of the lead pad, a portion of the upper surface of the integrated circuit board, and a periphery of the isolation layer.
2. The image sensor module as claimed in claim 1, wherein the material of the insulating layer comprises at least one of black photoresist, photosensitive polyimide, photosensitive epoxy resin, and photosensitive acrylic resin.
3. The image sensor module as described in claim 1, wherein the thickness of the isolation layer is less than or equal to the thickness of the image sensor chip.
4. The image sensor module as described in claim 1, wherein the thickness of the isolation layer is greater than the thickness of the image sensor chip.
5. The image sensor module as described in claim 1, wherein the width of the isolation layer is in the range of 5 to 200 micrometers.
6. The image sensor module as described in claim 4, wherein the thickness difference between the isolation layer and the image sensor chip is in the range of 0 to 150 micrometers.
7. The image sensor module as described in claim 1, wherein the encapsulation material covers a periphery of the image sensor chip.
8. The image sensor module as claimed in claim 1, wherein an adhesive layer is included between the image sensor chip and the lower surface of the isolation layer and the upper surface of the integrated circuit board.
9. The image sensor module as claimed in claim 1, wherein the distance between the side of the dam facing the image sensing area and the side of the image sensing area facing the dam is greater than 50 micrometers.
10. The image sensor module as claimed in claim 1, wherein the dam may be disposed between the lower surface of the cover plate and the non-image sensing area of the upper surface of the image sensing chip, and between the lower surface of the cover plate and an upper surface of the isolation layer.
11. The image sensor module as claimed in claim 1, wherein the material of the insulating layer comprises at least one of epoxy resin, black epoxy resin, polyimide, and polysiloxane resin; the material of the dam comprises at least one of epoxy resin, black epoxy resin, polyimide, polysiloxane resin, and UV adhesive; and the encapsulation material comprises at least one of epoxy resin, black epoxy resin, polyimide, polysiloxane resin, and UV adhesive.
Citation Information
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CN110648981A
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