Wafer processing equipment

TWI940471BActive Publication Date: 2026-09-21HITACHI HIGH TECH CORP
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Patent Information

Application Number
TW115117084
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2022-09-26
Filing Date
2023-09-07
Publication Date
2026-09-21
Estimated Expiration
2043-09-06

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    Figure TWG2TB001912667_003
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Abstract

To provide a semiconductor device manufacturing system and a semiconductor device manufacturing method that improves processing yield, the system comprises: a semiconductor device manufacturing apparatus for processing wafers, comprising: a wafer platform on which the wafer is mounted; and a plurality of heaters disposed inside the wafer platform and below a plurality of regions thereon; a controller for adjusting the output of a plurality of heater power supplies supplied to the plurality of heaters; and a wafer temperature calculation system for determining whether a first output value of the plurality of heater power supplies, pre-calculated to achieve a target temperature in the wafer processing, is within an allowable range, and if it is outside the allowable range, calculating a second output value that corrects all of the first output values ​​to values ​​within the allowable range.
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Claims

1. A wafer processing apparatus comprising: a platform disposed within a processing chamber inside a container, on which a wafer to be processed is placed; and a plurality of heaters disposed within the platform below the plurality of regions on the platform; and a controller for adjusting the operation of the plurality of heaters; wherein the wafer on the platform is processed while adjusting the operation of the plurality of heaters, the wafer processing apparatus wherein, In order to achieve the first condition in the processing of the aforementioned wafer, which is set as the target, a first plurality of values ​​of the parameters of the operation of the aforementioned plurality of heaters are used. When the aforementioned controller has determined in advance that the first plurality of values ​​are not within the allowable range, the operation of the aforementioned plurality of heaters is adjusted to become a second plurality of values. The second plurality of values ​​are obtained by correcting the aforementioned first plurality of values ​​to the aforementioned allowable range, and are obtained by first correcting one of the aforementioned first plurality of values. The aforementioned first condition for other regions that are different from the region corresponding to the one value is highly correlated with the correction of the one value to the aforementioned allowable range.

2. The wafer processing apparatus as described in claim 1, wherein, The aforementioned controller adjusts the operation of each of the aforementioned plurality of heaters to obtain a second plurality of values, which are obtained by modifying the aforementioned first plurality of values ​​used to achieve the aforementioned first condition, namely the temperature distribution during the aforementioned wafer processing, and the first plurality of values ​​being the power supplied to each of the aforementioned plurality of heaters.

3. The wafer processing apparatus as described in claim 2, wherein, The aforementioned controller adjusts the operation of each of the aforementioned plurality of heaters to obtain a second plurality of values. The second plurality of values ​​are obtained by preferentially correcting one of the aforementioned first plurality of values, i.e., the value of the power supplied to each of the aforementioned plurality of heaters. The aforementioned temperature values ​​of other regions that are different from the region corresponding to the one value are highly correlated with the correction of the one value to the aforementioned allowable range.

4. The wafer processing apparatus as described in claim 1 or 2, wherein, When the aforementioned controller is outside the allowable range of the first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, the operation of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values ​​corrected to the aforementioned allowable range and can minimize the value of the specified objective function.

5. The wafer processing apparatus as described in claim 3, wherein, When the aforementioned controller is outside the allowable range of the first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, the operation of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values ​​corrected to the aforementioned allowable range and can minimize the value of the specified objective function.

6. The wafer processing apparatus as described in claim 4 or 5, wherein, The aforementioned controller adjusts the operation of each of the aforementioned plurality of heaters to obtain a second plurality of values, wherein the aforementioned value with the highest correlation is preferentially corrected to the aforementioned allowable range, and the aforementioned power values ​​are sequentially increased or decreased until the value of the aforementioned objective function is minimized.

7. A wafer processing method comprising processing a wafer on a platform while adjusting the operation of a plurality of heaters in a wafer processing apparatus, the wafer processing apparatus comprising: the aforementioned platform, disposed in a processing chamber inside a container, on which the aforementioned wafer to be processed is placed; and the aforementioned plurality of heaters, disposed inside the platform below the aforementioned plurality of regions on the platform; and a controller for adjusting the operation of the plurality of heaters; wherein, in the wafer processing method, In order to achieve the first condition in the aforementioned wafer processing, which is set as the target, a first plurality of values ​​of the parameters of the operation of the aforementioned plurality of heaters are used. When it is determined in advance that the first plurality of values ​​are not within the allowable range, the operation of the aforementioned plurality of heaters is adjusted to become a second plurality of values. The second plurality of values ​​are obtained by correcting the aforementioned first plurality of values ​​to the aforementioned allowable range, and are obtained by first correcting one of the aforementioned first plurality of values. The aforementioned first condition for other regions that are different from the region corresponding to the one value is highly correlated with the correction of the one value to the aforementioned allowable range.

8. The wafer processing method as described in claim 7, wherein, The operation of each of the aforementioned plurality of heaters is adjusted to obtain a second plurality of values, which are obtained by modifying the aforementioned first plurality of values ​​used to achieve the aforementioned first condition, namely the temperature distribution in the aforementioned wafer processing, and the first plurality of values ​​are the values ​​of the power supplied to each of the aforementioned plurality of heaters.

9. The wafer processing method as described in claim 8, wherein, The operation of each of the aforementioned plurality of heaters is adjusted to obtain a second plurality of values, which are obtained by first correcting one of the aforementioned first plurality of values, i.e., the value of the power supplied to each of the aforementioned plurality of heaters. The aforementioned temperature values ​​of other regions that are different from the region corresponding to the one value are highly correlated with the correction of the one value to the aforementioned allowable range.

10. The wafer processing method as described in claim 7 or 8, wherein, When the aforementioned first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, is outside the allowable range, the operation of each of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values ​​corrected to the aforementioned allowable range and can minimize the value of the specified objective function.

11. The wafer processing method as described in claim 9, wherein, When the aforementioned first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, is outside the allowable range, the operation of each of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values ​​corrected to the aforementioned allowable range and can minimize the value of the specified objective function.

12. The wafer processing method as described in claim 5 or 6, wherein, The operation of each of the aforementioned plurality of heaters is adjusted to obtain a second plurality of values, wherein the aforementioned value with the greatest correlation is preferentially corrected to the aforementioned allowable range, and the aforementioned power values ​​are sequentially increased or decreased until the value of the aforementioned objective function is minimized.

Citation Information

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