Wafer processing equipment
Patent Information
- Application Number
- TW115117084
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-09-26
- Filing Date
- 2023-09-07
- Publication Date
- 2026-09-21
- Estimated Expiration
- 2043-09-06
Smart Images

Figure TWG2TB001912667_001 
Figure TWG2TB001912667_002 
Figure TWG2TB001912667_003
Abstract
Claims
1. A wafer processing apparatus comprising: a platform disposed within a processing chamber inside a container, on which a wafer to be processed is placed; and a plurality of heaters disposed within the platform below the plurality of regions on the platform; and a controller for adjusting the operation of the plurality of heaters; wherein the wafer on the platform is processed while adjusting the operation of the plurality of heaters, the wafer processing apparatus wherein, In order to achieve the first condition in the processing of the aforementioned wafer, which is set as the target, a first plurality of values of the parameters of the operation of the aforementioned plurality of heaters are used. When the aforementioned controller has determined in advance that the first plurality of values are not within the allowable range, the operation of the aforementioned plurality of heaters is adjusted to become a second plurality of values. The second plurality of values are obtained by correcting the aforementioned first plurality of values to the aforementioned allowable range, and are obtained by first correcting one of the aforementioned first plurality of values. The aforementioned first condition for other regions that are different from the region corresponding to the one value is highly correlated with the correction of the one value to the aforementioned allowable range.
2. The wafer processing apparatus as described in claim 1, wherein, The aforementioned controller adjusts the operation of each of the aforementioned plurality of heaters to obtain a second plurality of values, which are obtained by modifying the aforementioned first plurality of values used to achieve the aforementioned first condition, namely the temperature distribution during the aforementioned wafer processing, and the first plurality of values being the power supplied to each of the aforementioned plurality of heaters.
3. The wafer processing apparatus as described in claim 2, wherein, The aforementioned controller adjusts the operation of each of the aforementioned plurality of heaters to obtain a second plurality of values. The second plurality of values are obtained by preferentially correcting one of the aforementioned first plurality of values, i.e., the value of the power supplied to each of the aforementioned plurality of heaters. The aforementioned temperature values of other regions that are different from the region corresponding to the one value are highly correlated with the correction of the one value to the aforementioned allowable range.
4. The wafer processing apparatus as described in claim 1 or 2, wherein, When the aforementioned controller is outside the allowable range of the first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, the operation of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values corrected to the aforementioned allowable range and can minimize the value of the specified objective function.
5. The wafer processing apparatus as described in claim 3, wherein, When the aforementioned controller is outside the allowable range of the first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, the operation of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values corrected to the aforementioned allowable range and can minimize the value of the specified objective function.
6. The wafer processing apparatus as described in claim 4 or 5, wherein, The aforementioned controller adjusts the operation of each of the aforementioned plurality of heaters to obtain a second plurality of values, wherein the aforementioned value with the highest correlation is preferentially corrected to the aforementioned allowable range, and the aforementioned power values are sequentially increased or decreased until the value of the aforementioned objective function is minimized.
7. A wafer processing method comprising processing a wafer on a platform while adjusting the operation of a plurality of heaters in a wafer processing apparatus, the wafer processing apparatus comprising: the aforementioned platform, disposed in a processing chamber inside a container, on which the aforementioned wafer to be processed is placed; and the aforementioned plurality of heaters, disposed inside the platform below the aforementioned plurality of regions on the platform; and a controller for adjusting the operation of the plurality of heaters; wherein, in the wafer processing method, In order to achieve the first condition in the aforementioned wafer processing, which is set as the target, a first plurality of values of the parameters of the operation of the aforementioned plurality of heaters are used. When it is determined in advance that the first plurality of values are not within the allowable range, the operation of the aforementioned plurality of heaters is adjusted to become a second plurality of values. The second plurality of values are obtained by correcting the aforementioned first plurality of values to the aforementioned allowable range, and are obtained by first correcting one of the aforementioned first plurality of values. The aforementioned first condition for other regions that are different from the region corresponding to the one value is highly correlated with the correction of the one value to the aforementioned allowable range.
8. The wafer processing method as described in claim 7, wherein, The operation of each of the aforementioned plurality of heaters is adjusted to obtain a second plurality of values, which are obtained by modifying the aforementioned first plurality of values used to achieve the aforementioned first condition, namely the temperature distribution in the aforementioned wafer processing, and the first plurality of values are the values of the power supplied to each of the aforementioned plurality of heaters.
9. The wafer processing method as described in claim 8, wherein, The operation of each of the aforementioned plurality of heaters is adjusted to obtain a second plurality of values, which are obtained by first correcting one of the aforementioned first plurality of values, i.e., the value of the power supplied to each of the aforementioned plurality of heaters. The aforementioned temperature values of other regions that are different from the region corresponding to the one value are highly correlated with the correction of the one value to the aforementioned allowable range.
10. The wafer processing method as described in claim 7 or 8, wherein, When the aforementioned first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, is outside the allowable range, the operation of each of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values corrected to the aforementioned allowable range and can minimize the value of the specified objective function.
11. The wafer processing method as described in claim 9, wherein, When the aforementioned first plurality of values, i.e., the power supplied to each of the aforementioned plurality of heaters, is outside the allowable range, the operation of each of the aforementioned plurality of heaters is adjusted to become the second plurality of values, which are the power values corrected to the aforementioned allowable range and can minimize the value of the specified objective function.
12. The wafer processing method as described in claim 5 or 6, wherein, The operation of each of the aforementioned plurality of heaters is adjusted to obtain a second plurality of values, wherein the aforementioned value with the greatest correlation is preferentially corrected to the aforementioned allowable range, and the aforementioned power values are sequentially increased or decreased until the value of the aforementioned objective function is minimized.
Citation Information
Patent Citations
Apparatus and method for chemical vapor deposition control
TW201215703A
Methods and systems for determining a fault in a gas heater channel
TW201714196A
Rapid tuning of critical dimension non-uniformity by modulating temperature transients of multi-zone substrate supports
TW202104657A
