Purging spindle arms to prevent deposition and wafer sliding

Abstract

A system includes a plurality of spindle arms positioned above a plurality of workstations within a processing chamber for transporting a semiconductor substrate between the workstations. During processing of the semiconductor substrate, the spindle arms remain within the processing chamber. The system includes a first gas line disposed below the workstations for supplying purging gas. The system includes a second gas line extending upward from the first gas line for supplying the purging gas to the spindle arms during processing of the semiconductor substrate within the processing chamber.

Description

[Technical Field]

[0001] [Cross-reference to related applications] This application is PCT international application No. 62 / 949,205, filed on December 17, 2019. The entire contents of the above application are incorporated herein by reference.

[0002] The present invention relates generally to a substrate processing system, and more particularly to a rinsing system for preventing deposits on the spindle arm in the processing chamber of a substrate processing system. [Previous Technology]

[0003] The prior art description provided herein is intended to generally introduce the background of the present invention. The achievements of the inventors named in this application within the scope of the prior art section, as well as embodiments of the specification that were not qualified as prior art at the time of application, are not intended or implied to be admitted as prior art against the present invention.

[0004] A substrate processing system typically includes multiple processing chambers (also called processing modules) for performing deposition, etching, and other processing on a substrate (such as a semiconductor wafer). Examples of processing that can be performed on a substrate include (but are not limited to) plasma-assisted chemical vapor deposition (PECVD), chemical-assisted plasma vapor deposition (CEPVD), and sputtering physical vapor deposition (PVD). Other examples of processing that can be performed on a substrate include (but are not limited to) etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, the substrate is placed on a substrate support (e.g., a base, electrostatic chuck (ESC), etc.) in the processing chamber of the substrate processing system. During deposition, a gas mixture containing one or more precursors is introduced into the processing chamber, and plasma is triggered to activate the chemical reaction. During deposition, a gas mixture containing etching gases is introduced into the processing chamber, and plasma is triggered to activate the chemical reaction. A computer-controlled robot typically transfers the substrate from one processing chamber to another in the order in which the substrates are to be processed. [Summary of the Invention]

[0006] A system includes a plurality of spindle arms positioned above a plurality of workstations within a processing chamber for transporting a semiconductor substrate between the workstations. During processing of the semiconductor substrate, the spindle arms reside within the processing chamber. The system includes a first gas line disposed below the workstations for supplying purging gas. The system includes a second gas line extending upward from the first gas line for supplying the purging gas to the spindle arms during processing of the semiconductor substrate within the processing chamber.

[0007] In another feature, the system further includes a channel disposed near the top of each of the workstations. The channel is in fluid communication with one of the second gas lines and includes an outlet for supplying the flushing gas to one of the spindle arms.

[0008] In another feature, the system further includes a connection component for hermetically connecting the channel to one of the second gas lines.

[0009] In another feature, the connection assembly includes an orifice for controlling the flow rate of the flushing gas into the channel.

[0010] In another feature, the system further includes a channel disposed near the top of each of the workstations. The channel is in fluid communication with one of the second gas lines and includes an outlet near each end of the channel for supplying the flushing gas to the two spindle arms located on either side of the channel.

[0011] In another feature, the system further includes a liner that forms a lining on the top of each of the workstations. The liner contains the channel.

[0012] In another feature, the second gas pipelines are located around the workstations.

[0013] In another feature, the system further includes a source that supplies the flushing gas to the first gas lines via a regulator that regulates the flow rate of the flushing gas to the first gas lines.

[0014] In another feature, the system further includes a controller for: controlling the processing performed on the semiconductor substrate; controlling the spindle arms during the processing to transfer the semiconductor substrate between the workstations; and controlling the flow rate of the flushing gas supplied to the first gas lines.

[0015] In another feature, the system further includes a spindle located at the center of the processing chamber for laterally moving the spindle arms across the workstations arranged around the center.

[0016] Among other features, a system includes: a plurality of gas lines disposed around the base of N workstations along a plane, where N is an integer greater than 2. The N workstations are disposed around the center of a processing chamber for processing a semiconductor substrate. The system includes N liners, each forming a liner on the periphery of the top of the N workstations. Each of the N liners extends outward from the periphery parallel to the plane and includes a channel in fluid communication with the plurality of gas lines. The channel is disposed along the periphery, has closed first and second ends near the center of the processing chamber, and includes an outlet at each of the first and second ends for laterally distributing gas from the periphery. The system includes N spindle arms for transferring the semiconductor substrate between the N workstations. Each of the N spindle arms extends laterally from a spindle at the center of the processing chamber parallel to the plane, is disposed between adjacent pairs of the N liners, and includes a region that contacts the semiconductor substrate during the transfer operation. These areas are adjacent to the outlets of the channels of two adjacent pairs of the N linings. The system includes N vertical gas lines, which are respectively located around the perimeter of the N workstations. Each of the N vertical gas lines is in fluid communication with the plurality of gas lines and is in fluid communication with the channels of the N linings.

[0017] Among other features, each of the N vertical gas lines is hermetically connected to a corresponding channel via an inlet leading to a corresponding one of the N linings, and the inlet has an orifice in fluid communication with the corresponding channel.

[0018] Among other features, the inlet includes: a connector connected to a corresponding one of the N vertical gas lines; an O-ring surrounding the orifice of the inlet, the O-ring sealingly connecting the orifice to the corresponding channel; and a plurality of recesses for aligning the inlet with the corresponding one of the N liners.

[0019] Among other features, each of the channels includes a plurality of the outlets, and the regions of each of the N spindle arms that contact the semiconductor substrate are adjacent to the plurality of the outlets of the channels of corresponding adjacent pairs in the N linings.

[0020] Among other features, the plurality of gas lines are interconnected using connecting assemblies. Each of these connecting assemblies includes: a first portion connected to a first gas line of the plurality of gas lines; a second portion connected to a second gas line of the plurality of gas lines; an O-ring that sealably connects the first and second portions; and a plurality of vacuum screws disposed around the O-ring and engaging the first and second portions. The first and second gas lines are in fluid communication via the first and second portions.

[0021] Among other features, each of the N vertical gas lines is positioned away from the vertical travel path of the semiconductor substrate in each of the N workstations.

[0022] Among other features, the plurality of gas lines are connected to a gas source located outside the processing chamber. The system further includes a pressure regulator located outside the processing chamber for regulating the flow rate of the gas supplied from the source to the plurality of gas lines.

[0023] Among other features, the outlets of the channels of the N liners output the gas to the regions of the N spindle arms during the processing of the semiconductor substrate.

[0024] Among other features, the outlets of the channels of the N liners output the gas to the regions of the N spindle arms, and the gas prevents or reduces the deposition of material on the regions of the N spindle arms during the processing of the semiconductor substrate.

[0025] Among other features, the system further includes a controller for: controlling the processing performed on the semiconductor substrate; controlling the N spindle arms during the processing to transfer the semiconductor substrate between the N workstations; and controlling the flow rate of the rinsing gas supplied to the plurality of gas lines. The outlets of the channels of the N liners output the gas to the regions of the N spindle arms to prevent or reduce the deposition of materials used in the processing on the regions of the N spindle arms.

[0026] Among other features, a method includes routing a plurality of gas lines around the base of a plurality of workstations in a processing chamber. The workstations are disposed around a spindle located at the center of the processing chamber. The spindle has spindle arms located between the upper portions of the workstations for transferring a semiconductor substrate between the workstations. The method includes extending a vertical gas line from a portion of one of the plurality of gas lines along the periphery of each of the workstations to the top of each of the workstations. The method includes providing a channel in a liner aligned with the periphery of the top of each of the workstations. The channel is in fluid communication with the vertical gas line, is semi-circular, and is closed at both ends near the center of the processing chamber, and includes a plurality of outlets at both ends for distributing gas to adjacent spindle arms. The method includes supplying gas to the channel via the plurality of gas lines during processing of the semiconductor substrate.

[0027] In another feature, the method further includes distributing gas from the channel to the spindle arm to prevent or reduce the deposition of material on the spindle arm during the processing of the semiconductor substrate.

[0028] In another feature, the method further includes controlling the flow rate of the gas supplied to the plurality of gas lines.

[0029] In another feature, the gas includes an inert gas or a non-reactive gas.

[0030] Among other features, the method further includes: controlling the processing performed on the semiconductor substrate; controlling the spindle arms during the processing to transfer the semiconductor substrate between the workstations; controlling the flow rate of the gas supplied to the plurality of gas lines during the processing; and distributing the gas from the channels to the spindle arms to prevent or reduce the deposition of materials used in the processing on the spindle arms.

[0031] Further applicability of this disclosure will become apparent from the embodiments, the scope of the invention claims, and the drawings. The detailed descriptions and specific examples are intended for illustrative purposes only and are not intended to limit the scope of this disclosure.

Implementation Method

[0032] In a ringless wafer transfer system, a spindle arm can be used to transfer wafers between multiple workstations in a processing module. The spindle arm residing in the processing module may accumulate deposited material from the deposition processes performed within the module. In processing modules where a smooth thin film is deposited on a wafer, after the spindle arm has accumulated deposited material over a period of time, the wafer may slip off the spindle arm during indexing between multiple workstations. The accumulation of deposited material on the spindle arm over time limits the batch size of the processing module, significantly impacting throughput. This disclosure provides a flushing system that generates a concentrated flushing action around the wafer contact points on the spindle arm. This flushing system prevents or reduces the accumulation of deposited material on the spindle arm and avoids wafer slippage.

[0033] A ringless wafer transfer system includes a spindle arm located between two adjacent workstations in a processing module. The spindle arm can move on a pedestal. Lifting pins transfer the wafer from the pedestal to the spindle arm. The spindle arm can then index to move the wafer from one workstation in the processing module to another. The spindle arm can be located within the processing module. The spindle arm is exposed to the deposition process performed on the wafer in the processing module. Therefore, a thin film deposited on the wafer during the deposition process may also be deposited on the spindle arm. After a smooth film accumulates on the spindle arm, the wafer transported by the spindle arm may slip off the spindle arm during indexing. In most cases, the slipped wafer may cause wafer breakage or wafer scrap. Furthermore, in most cases, the operation of recovering the wafer requires the processing module to be turned on, which causes significant downtime. One way to mitigate the wafer slip problem is to reduce the batch size, which affects tooling throughput.

[0034] This disclosure generally provides a flushing system that directs flushing gas over the contact pads of the spindle arm to prevent deposition on the contact pads of the spindle arm. Alternatively, the flushing system may direct flushing gas across the entire spindle arm to prevent deposition on the spindle arm. This flushing system can reduce or mitigate the risk of wafer slippage. The flushing operation is performed during the deposition process. That is, the flushing operation is performed simultaneously with deposition on the wafer. The flushing gas can be any inert gas. For example, argon can be used as the flushing gas.

[0035] A custom-made seal can be used to introduce flushing gas into the treatment chamber through an opening or inlet. The flow rate of the flushing gas can be adjusted using a pressure regulator. The inlet of the treatment chamber may have an orifice. By controlling the pressure and the orifice size, the flow rate of the flushing gas into the treatment chamber can be controlled.

[0036] The flushing gas can be evenly distributed to the workstations within the processing chamber using a network of gas lines within the processing chamber. Interconnecting assemblies with custom-designed seals can be used to connect the gas lines to each other. The flushing gas then flows into the liner / filler plate surrounding each workstation. The inlet of the liner may have orifices to evenly distribute the gas among the workstations in the processing chamber. The interior of the liner may have an internal channel that draws in the flushing gas from one inlet and directs it to four outlets (referred to as flushing orifices), which are concentrated around the wafer contact points on the spindle arm. For example, the gas lines and liner may be made of aluminum. The liner is manufactured using, for example, friction stir welding.

[0037] It should be noted that the rinsing system is independent of the formulation and chemicals used for wafer deposition. That is, regardless of the formulation and chemicals used to deposit materials on the wafer, a rinsing procedure using rinsing gas can prevent or reduce deposition on the spindle arm. Furthermore, regardless of the pressure and temperature used in the processing chamber during wafer deposition, the rinsing procedure can prevent or reduce deposition on the spindle arm. The rinsing procedure can be performed during wafer deposition. For example, gas lines extend below the lifting pin rings in each workstation. Therefore, the gas lines do not interfere with the movement of the lifting pins.

[0038] This disclosure is organized as follows. First, an example of a processing chamber is shown and described with reference to FIG1. ​​Then, various configurations and structures of the rinsing system according to this disclosure are shown and described with reference to FIGS. 2-9. Subsequently, further views and structural details of the various components of the rinsing system are shown and described with reference to FIGS. 10-17. A method for rinsing the spindle arm during wafer processing is shown and described with reference to FIG. 18.

[0039] Figure 1 shows an example of a substrate processing system 100 including a processing chamber 102. Although this example is described in the context of plasma-assisted chemical vapor deposition (PECVD), the teachings of this disclosure can be applied to other types of substrate processing such as atomic layer deposition (ALD), plasma-assisted ALD (PEALD), CVD, or other processes including etching. System 100 includes a processing chamber 102 that surrounds other components of system 100 and contains RF plasma (if used). Processing chamber 102 includes an upper electrode 104 and an electrostatic chuck (ESC) 106 or other substrate support. During operation, a substrate 108 is placed on the ESC 106.

[0040] For example, the upper electrode 104 may include a gas distribution device 110 (e.g., a spray head) for introducing and distributing process gas. The gas distribution device 110 may include a rod portion having one end connected to the top surface of the processing chamber 102. The base of the spray head is generally cylindrical and extends radially outward from the other end of the rod portion (located at a position spaced apart from the top surface of the processing chamber 102). The substrate-facing surface or panel of the base of the spray head includes a plurality of holes through which vaporized precursors, process gas, or exhaust gas flow. Alternatively, the upper electrode 104 may include a conductive plate, and the process gas may be introduced in another manner.

[0041] The ESC 106 includes a base plate 112, which serves as a lower electrode. The base plate 112 supports a heating plate 114, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 116 may be disposed between the heating plate 114 and the base plate 112. The base plate 112 may include one or more channels 118 for allowing coolant to flow through the base plate 112.

[0042] If plasma is used, the RF generation system 120 generates and outputs an RF voltage to either the upper electrode 104 or the lower electrode (e.g., the base plate 112 of the ESC 106). The other of the upper electrode 104 and the base plate 112 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 120 may include an RF generator 122 that generates RF power, which is fed to the upper electrode 104 or the base plate 112 via a matching and distribution network 124. In other examples, plasma may be generated inductively or remotely.

[0043] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. Gas sources 132 are connected to manifold 140 via valves 134-1, 134-2, ..., and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controllers 136). The vapor delivery system 142 supplies vaporized precursors to manifold 140 or another manifold (not shown) connected to processing chamber 102. The output of manifold 140 is fed to processing chamber 102.

[0044] A temperature controller 150 can be connected to a plurality of thermal control elements (TCEs) 152 disposed in the heating plate 114. The temperature controller 150 can be used to control the plurality of TCEs 152 to control the temperature of the ESC 106 and the substrate 108. The temperature controller 150 can communicate with a coolant assembly 154 to control the coolant flowing through the channel 118. For example, the coolant assembly 154 may include a coolant pump, a reservoir, and one or more temperature sensors (not shown). The temperature controller 150 operates the coolant assembly 154 to selectively allow coolant to flow through the channel 118 to cool the ESC 106. A valve 156 and a pump 158 can be used to evacuate reactants from the processing chamber 102. A system controller 160 controls the components of the system 100.

[0045] The lifting pin is held by a lifting pin holder (shown and described below with reference to FIG3) on the lifting pin ring and is used to facilitate the transport of the substrate 108 and its removal from the processing chamber 102 by a robotic arm (e.g., a spindle arm described below). Typically, the upper end of the lifting pin is located flush with or below the upper surface of the substrate support assembly 106. During substrate transport or removal, the lifting pin is raised relative to the upper surface of the substrate support assembly 106 to elevate the substrate 108 and provide a gap between the substrate 108 and the substrate support assembly 106. The gap between the substrate 108 and the substrate support assembly 106 allows for the insertion or removal of the end effector of the robotic arm.

[0046] Figure 2 shows an example of a processing chamber 200 containing a plurality of workstations. For example, the processing chamber 200 contains four workstations 202-1, 202-2, 202-3, and 202-4 (collectively referred to as the plurality of workstations 202; or synonymously referred to as workstations 202). Generally, the processing chamber 200 may contain two or more workstations 202. The processing chamber 200 contains a plurality of spindle arms. For example, since the processing chamber 200 contains four workstations 202, the processing chamber 200 contains four spindle arms 204-1, 204-2, 204-3, and 204-4 (collectively referred to as the plurality of spindle arms 204; or synonymously referred to as spindle arms 204). The spindle 205 drives the spindle arms 204. A controller (e.g., controller 160 shown in Figure 1) controls the spindle 205 and the spindle arms 204.

[0047] Each workstation 202 includes a liner that forms a liner along a plane on the upper periphery of the workstation 202, wherein the plane is parallel to the plane in which the wafer is located during processing within the workstation 202. For example, since the processing chamber 200 includes four workstations 202, the processing chamber 200 includes four liners 206-1, 206-2, 206-3, and 206-4 (collectively referred to as liners 206). Each liner 206 includes a channel for gas flow (shown as element 207 in FIG. 12). Each liner 206 includes an inlet that is in fluid communication with the channel to receive flushing gas. The liners 206 (also referred to as gap fillers) are shown in detail in FIG. 10-12.

[0048] Each workstation 202 includes an inlet with an orifice that is in fluid communication with the inlet of liner 206 and feeds flushing gas into liner 206 (i.e., a passage into liner 206). For example, workstation 202 includes inlets 208-1, 208-2, 208-3, and 208-4 (collectively referred to as inlets 208), which respectively feed flushing gas into liner 206. Inlets 208 are shown in detail in Figures 8 and 16.

[0049] The channels in each liner 206 serve two spindle arms 204. The channels are embedded in the liner 206, as shown in Figure 12. The channels are shown as element 207 in Figure 12. Therefore, it can also be said that each channel serves two spindle arms 204. When describing the delivery of flushing gas to the spindle arms 204 via the liner 206, the terms "channel" and "liner" are used interchangeably.

[0050] The channel in each liner 206 is semi-circular, closed at both ends, and has four outlets (shown in detail in Figures 4 and 6) that deliver flushing gas to the two spindle arms 204. The channel in each liner 206 comprises two halves: a first half extends from the inlet (or from the inlet 208) to a first end of the liner 206 (or the channel), and a second half extends from the inlet (or from the inlet 208) to a second end of the liner 206 (or the channel).

[0051] In each liner 206 (i.e., in each channel), the two outlets of the first group are located on the first half of the liner 206 (or channel) on the first side of the inlet 208, while the two outlets of the second group are located on the second half of the liner 206 (or channel) on the second side of the inlet 208. Each of the outlets in the first group and the second group may contain one outlet or a plurality of outlets.

[0052] In each liner 206 (i.e., in each channel), two outlets of a first set located on the first half of the liner 206 output flushing gas to the side of the first spindle arm 204 adjacent to the first half of the liner 206. In each liner 206 (i.e., in each channel), two outlets of a second set located on the second half of the liner 206 output flushing gas to the side of the second spindle arm 204 adjacent to the second half of the liner 206.

[0053] For example, in lining 206-1, the two outlets of the first group output flushing gas to the first side of the spindle arm 204-1 adjacent to the first half of lining 206-1, and the two outlets of the second group output flushing gas to the first side of the spindle arm 204-4 adjacent to the second half of lining 206-1.

[0054] In the lining 206-2, the two outlets of the first group output flushing gas to the second side of the main shaft arm 204-1 adjacent to the first half of the lining 206-2, and the two outlets of the second group output flushing gas to the first side of the main shaft arm 204-2 adjacent to the second half of the lining 206-2.

[0055] In the lining 206-3, the two outlets of the first group output flushing gas to the second side of the main shaft arm 204-2 adjacent to the first half of the lining 206-3, and the two outlets of the second group output flushing gas to the first side of the main shaft arm 204-3 adjacent to the second half of the lining 206-3.

[0056] In the lining 206-4, the two outlets of the first group output flushing gas to the second side of the main shaft arm 204-3 adjacent to the first half of the lining 206-4, and the two outlets of the second group output flushing gas to the second side of the main shaft arm 204-4 adjacent to the second half of the lining 206-4.

[0057] A plurality of gas lines 230 (shown in detail in Figures 6, 7, 13, and 14) are distributed throughout the bottom region of workstation 202 to distribute flushing gas to liner 206 (i.e., to channels within liner 206). Processing chamber 200 includes inlet 210 through which gas lines 230 receive flushing gas from an external source. Inlet 210 is sealed at the bottom wall of processing chamber 200 using a custom seal. Inlet 210 is connected to a flushing gas source located outside processing chamber 200 (e.g., one or more elements 132 shown in Figure 1).

[0058] Inlet 210 is connected to the purge gas source via a valve and pressure regulator collectively shown at 212. Element 212 is connected to the purge gas source via one or more optional connections. For example, two such optional connections are generally shown at 213, which can be used to select different purge gases (e.g., argon or other non-reactive gases). The valve and pressure regulator can be used to control the flow rate of the purge gas entering the gas line 230 via inlet 210. Alternatively, a mass flow controller (MFC) of element 136 as shown in FIG. 1 can be used to control the flow rate instead of using a valve, pressure regulator, and inlet 212.

[0059] In the example shown in Figure 2, workstations 202 are also numbered 1 to 4. For example only, inlet 210 is shown as being located below workstation 3. Alternatively, inlet 210 may be located below any other workstation, or inlet 210 may be any opening / hole anywhere in the processing chamber 200. Furthermore, for example only, the connection or path of gas line 230 is shown as from workstation 3 to workstation 4 and from workstation 3 to workstation 2 and then to workstation 1. In the example shown in Figure 2, for example only, gas line 230 begins at inlet 210 at workstation 3 and terminates at workstation 4; and gas line 230 begins at workstation 3 and terminates at workstation 1. In other words, in the example shown in Figure 2, for example only, gas line 230 includes two branches extending from inlet 210 and workstation 3: a first branch extending from workstation 3 to workstation 4, and a second branch extending from workstation 3 to workstation 1.

[0060] However, the connection or path of the gas line 230 may differ from that shown in Figure 2. For example, Figure 5 shows another example of the connection or path of the gas line 230, which runs from workstation 3 to workstation 2, then to workstation 1, and finally to workstation 4. Therefore, the inlet 210 of the gas line 230 into the processing chamber 200 may be located below any of the workstations 202, and the way the gas line 230 is connected or routed between the workstations 202 is variable. For example, the gas line 230 may be connected or routed to the workstations 202 sequentially or in one or more branches. Therefore, the design or distribution of the gas line 230 is modular and flexible.

[0061] Figure 3 shows a cross-sectional view of the processing chamber 200 and other details of the workstation 202. Each workstation 202 includes a lifting ring and three lifting pins. For example, workstation 202-2 includes a lifting ring 250 and three lifting pins 252-1, 252-2, and 252-3 (collectively referred to as lifting pins 252). Although the lifting ring 250 and lifting pins 252 are identified only in one workstation 202-2, it should be understood that each workstation 202 includes a lifting ring similar to the lifting ring 250 and lifting pins similar to the lifting pins 252. Gas lines 230 (shown in detail in Figures 6 and 7) are distributed throughout the bottom region of these workstations 202 in a plane parallel to and below the lifting ring 250, wherein the plane is parallel to the plane in which the wafer is located during processing in each of the workstations 202.

[0062] Figure 4 shows the spindle arm 204 in more detail. Spindle arm 204-1 is shown by way of example only. It should be understood that each spindle arm 204 contains elements similar to those shown and described with reference to spindle arm 204-1. Liners 206-2 and 206-1 supply flushing gas to spindle arm 204-1. Two of the four outlets (also called flushing orifices) of liner 206-2 supplying flushing gas to spindle arm 204-1 are identified as elements 260-1 and 260-2. The other two outlets (also called flushing orifices) of liner 206-1 supplying flushing gas to spindle arm 204-1 are not visible in this view. These outlets 260-1, 260-2, etc., of each liner 206 are collectively referred to as outlets or flushing orifices 260.

[0063] Each spindle arm 204 includes four contact points that contact the wafer. The number of contact points on the spindle arm may vary. Of these four contact points, only two contact points of spindle arm 204-1 are visible in this view. These two contact points are labeled as elements 262-1 and 262-2. As shown, the two outlets 260-1 and 260-2 of liner 206-2 are respectively adjacent to the two contact points 262-1 and 262-2 of spindle arm 204-1. Similarly, the two outlets of liner 206-1, which are not visible in this view, are also adjacent to the other two contact points of spindle arm 204-1, which are not visible in this view.

[0064] Therefore, the four outlets of the two liners 206 (e.g., liners 206-1 and 206-2 in the exemplary embodiment) of two adjacent workstations 202 (e.g., workstations 202-2 and 202-1 in the exemplary embodiment) are adjacent to the four contact points of each spindle arm 204. In summary, the four outlets or flushing orifices 260 of the two adjacent liners 206 supply flushing gas to the spindle arm 204 at the four contact points 262 adjacent to the spindle arm 204.

[0065] Figure 5 shows a top view of the processing chamber 200 and an example different from that shown in Figure 2. In this example, the connection or path of the gas line 230 is different from that in Figure 2. For example, the gas line 230 is connected or routed from workstation 3 to workstation 2, then to workstation 1, and then to workstation 4. In this example, the gas line 230 begins at inlet 210 at workstation 3 and terminates at workstation 4. In Figure 5, similar to the example shown in Figure 2, the gas line 230 is located in a plane below the plane of the lifting pin ring 250, which is parallel to the plane in which the wafer is located in each workstation 202 during processing.

[0066] Figure 6 shows the gas line 230 in detail. For simplicity, only one outlet 260 is shown for each workstation 202. However, for example, an indication shown as " / 4" indicates that each workstation 202 has four outlets 260, as described above with reference to Figure 4. Figure 6 shows only one exemplary configuration of the gas line 230, corresponding to the connection or path of the gas line 230 shown in Figure 5. Other configurations or variations are non-limiting examples, such as inlet 210, which may be moved from workstation 3 to any other workstation. For example, the branch associated with workstation 4 may be moved onto the branch associated with workstation 3 (as shown in the example in Figure 2). These examples are not mutually exclusive. That is, both inlet 210 and the branch associated with workstation 202 may be moved to locations different from those shown.

[0067] Figure 7 shows in detail the interconnection of gas lines 230. Similarly, Figure 7 shows only one exemplary configuration of gas lines 230, which corresponds to the connection or path of gas lines 230 shown in Figure 5. As described above with reference to Figure 6, other additional configurations (including the example shown in Figure 2) are also feasible and can be considered.

[0068] As shown in the figure, gas lines 230 are distributed throughout the bottom region and surrounding area of ​​workstation 202. The gas lines 230 lie in a plane parallel to the plane containing the lifting pin 250 and the wafer. In each workstation 202, a portion of the gas lines 230 extends vertically (i.e., perpendicular to the plane containing the lifting pin 250 and the wafer) and mates with (i.e., is sealed) the inlet 208 of the liner 206. The structure of the inlet 208 is shown and described in detail below with reference to Figures 8 and 16.

[0069] Gas line 230 includes multiple elements or sections interconnected using surface mount assembly 290, which are shown and described in detail below with reference to FIG9 and 13-15. Additional interconnection assembly 300 for interconnecting the elements or sections of gas line 230 at corners (where gas line 230 makes sharp turns) is shown in FIG17.

[0070] Figure 8 shows an example of an inlet 208 for the liner 206. As described above, each workstation 202 includes a liner 206 and an inlet 208 for the liner 206. The structure of each inlet 208 is shown in Figure 8. The inlet 208 includes a connector 280 connected to a portion of a gas line 230, wherein the portion extends vertically upward from the bottom of the gas line 230. The inlet 208 includes an orifice 282 in fluid communication with a channel in the liner 206. The orifice 282 mates with the inlet 209 of the channel 207 shown in Figure 12. The inlet 208 includes an O-ring 284 surrounding the orifice 282. The O-ring 284 mates with the liner 206 (i.e., with the inlet 209 of the channel 207) and forms an airtight seal with the liner 206 (i.e., with the inlet 209 of the channel 207). The inlet 208 includes a notch 286 for alignment with the liner 206. Other views of entrance 208 are shown in Figure 16.

[0071] Figure 9 shows an example of a surface mount assembly 290 for interconnecting a plurality of elements or sections of a gas line 230. The surface mount assembly 290 includes an upper portion 292 and a lower portion 294. Each of the upper and lower portions 292 and 294 includes a connection to an element or section of the gas line 230. Each of the upper and lower portions 292 and 294 includes an orifice 295 for fluid connection of the gas line 230 connected via the surface mount assembly 290. The upper portion 292 engages with the lower portion 294 via an O-ring 296 (i.e., a hermetically sealed connection), the O-ring 296 forming an airtight seal between the upper portion 292 and the lower portion 294.

[0072] Furthermore, the upper portion 292 is secured to the lower portion 294 using a plurality of screws 298. The screws 298 are positioned around and surround the O-ring 296. The screws 298 are vacuum screws to prevent any entrapment of flushing gas. In another example of a surface-mount assembly 290 connecting the inlet 210 to the gas line 230, the upper portion 292 includes two connection portions: a first connection portion to the inlet 210 and a second connection portion to an element or section of the gas line 230. Further views of the surface-mount assembly 290 are shown in Figure 15.

[0073] The type of O-ring 296 may depend on the temperature of the surface mount assembly 290. The temperature of the surface mount assembly 290 may vary depending on factors including process temperature, substrate setpoint temperature, and substrate emissivity. For example, when the temperature of the surface mount assembly 290 can be below approximately 300 degrees Celsius, an O-ring 296 made of a polymer may be used, while when the temperature of the surface mount assembly 290 can be above approximately 300 degrees Celsius, an O-ring 296 made of a metal or alloy may be used. The O-ring 284 shown in Figure 8 may also be made of a material similar to that of the O-ring 296. However, the O-ring 284 heats up less quickly than the O-ring 296 because the heat dissipation rate from the O-ring 284 is faster than that from the O-ring 296.

[0074] During use, when the wafer is processed in workstation 202 (e.g., by deposition), a controller (e.g., controller 160 shown in FIG. 1) controls the flow rate of the flushing gas supplied to gas line 230 by controlling the valve and pressure regulator shown at 212. The flushing gas system is delivered via outlet 260 in liner 206, generally to spindle arm 204, and more specifically to contact point 262 of spindle arm 204. The flushing gas prevents or reduces the deposition of material (which is deposited on the wafer), generally preventing or reducing material deposition on spindle arm 204, and more specifically preventing or reducing material deposition on contact point 262 of spindle arm 204.

[0075] Figures 10-17 show other details and views of the liner 206, the channel 207 in the liner 206, the gas line 230 and its interconnection portion including interconnecting elements 290 and 300, and the inlet 208.

[0076] Figures 10-12 show various views and details of the liner 206. Figure 10 shows a top and bottom view of one of the liners 206. In the top view, the outlet 260 for distributing flushing gas to the spindle arm 204 can be seen. Figure 11 shows a top and bottom view of one of the liners 206 in more detail. In section AA of Figure 11, the channel 207 shown in Figure 12 can be seen. Detail B of the bottom view of the liner 206 in Figure 11 shows a portion of the inlet 208. As described above, Figure 12 shows the channel 207 and the inlet 209 entering the channel 207. The inlet 208 for the liner 206 mates with the inlet 209 of the channel 207 as described above.

[0077] Figures 13 and 14 show the various elements or sections of the gas line 230 and its interconnecting assemblies 290 and 300. Figures 13 and 14 also show the inlet 210 for receiving flushing gas from an external source and the inlet 208 for the liner 206, which supplies flushing gas to the passage 207 in the liner 206 as described above.

[0078] Figure 15 shows details of the structure of the interconnect assembly 290 (also shown in Figure 7). Figure 16 shows details of the structure of the inlet 208 (also shown in Figure 8). Figure 17 shows details of the structure of the interconnect assembly 300 (also shown in Figure 7). The interconnect assembly 300 includes an orifice 302 for fluidly connecting the gas line 230 connected via the interconnect assembly 300.

[0079] Figure 18 shows a flowchart of a method 400 for rinsing a spindle arm during wafer processing. For example, method 400 may be executed by the controller 160 shown in Figure 1. At 402, method 400 begins processing a wafer in a processing chamber comprising multiple workstations and further comprising a spindle arm for transferring the wafer between the workstations during processing. At 404, method 400 supplies inert gas to channels disposed in liners around the workstations via gas lines routed around the workstations, the top periphery of which forms a liner. At 406, method 400 controls the flow rate of the inert gas supplied to the gas lines. At 408, method 400 controls the spindle arm to transfer the wafer between the workstations during wafer processing. At 410, method 400 distributes inert gas from outlets in the channels to the spindle arm located between the tops of the workstations. In 412, method 400 distributes an inert gas from the channel to the spindle arm during wafer processing to prevent material from depositing on the spindle arm during wafer processing.

[0080] The foregoing description is illustrative in nature and is not intended to limit the scope of this disclosure, its application, or its uses. The broad indications of this disclosure can be implemented in various forms. Therefore, while this disclosure contains specific examples, other variations will become clearer when examining the drawings, specification, and the following claims, and the true scope of this disclosure should not be so limited. It should be understood that one or more steps of the method can be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while each of the embodiments described above has certain features, any one or more of these features described with respect to any embodiment of this disclosure can be implemented in any other embodiment and / or combined with features of any other embodiment (even if such combination is not described in detail). In other words, the embodiments are not mutually exclusive, and substitutions between one or more embodiments remain within the scope of this disclosure.

[0081] The spatial and functional relationships between components (e.g., modules, circuit elements, semiconductor layers, etc.) are described using various terms including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “above,” “over,” “below,” and “set.” Unless explicitly stated as “direct,” when describing the relationship between the first and second components in the foregoing disclosure, the relationship may be a direct relationship where there are no other intermediary components between the first and second components, or an indirect relationship (spatial or functional) where there are one or more intermediary components between the first and second components. As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the logic of using non-exclusionary OR (A OR B OR C), and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0082] In some embodiments, the controller is part of a system, which may be part of the examples described above. This system may include semiconductor processing equipment comprising (multiple) processing tools, (multiple) chambers, (multiple) processing platforms, and / or specific processing elements (wafer pedestals, gas flow systems, etc.). Such systems may be integrated with electronic equipment to control the operation of semiconductor wafers or substrates before, during, and after processing. The electronic equipment may be referred to as a "controller" and may control various elements or sub-components of (multiple) systems. Depending on processing requirements and / or system type, the controller may be programmed to control any of the processing disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer (into and out of tools connected or coupled to a specific system and other transfer tools, and / or load locks).

[0083] Broadly speaking, a controller can be defined as an electronic device having a plurality of integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, initiate cleaning operations, initiate endpoint measurements, etc. Integrated circuits may include: chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller or system in the form of different individual settings (or program files) that define operating parameters for performing a specific process (on or on a semiconductor wafer). In some embodiments, the operating parameters may be part of a formulation defined by a process engineer to implement one or more processing steps during the manufacture of one or more of the following: (including: coatings, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or substrate grains).

[0084] In some embodiments, the controller may be part of a computer, or coupled to a computer that is integrated with, coupled to, or networked to the system, or connected to the system in a combination thereof. For example, the controller may be in all or part of a cloud-based or factory mainframe computer system that allows remote access to wafer processing. The computer may enable the system to remotely access the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance indicators from multiple manufacturing operations, change parameters for the current process, set processing steps after the current process, or start a new process.

[0085] In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network, which may include a local area network or the Internet. The remote computer may include a user interface that allows access to, or programming of, parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool to which the controller is configured to engage or control.

[0086] Therefore, as described above, the controller can be distributed, for example by comprising one or more separate controllers that are networked together and operate toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for this purpose would be one or more integrated circuits located on the chamber and communicating with one or more integrated circuits located remotely (e.g., at the work platform level, or as part of a remote computer), which together control the process on the chamber.

[0087] The exemplary system may include, but is not limited to, the following: plasma etching chamber or module, deposition chamber or module, spin wash chamber or module, metal plating chamber or module, cleaning chamber or module, bevel edge etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chamber or module, ion implantation chamber or module, orbital chamber or module, and any other semiconductor processing system that may be associated with or used in the manufacture and / or processing of semiconductor wafers.

[0088] As described above, depending on the (plural) processing steps to be performed by the tool, the controller may communicate with one or more of the following in the semiconductor manufacturing plant: other tool circuits or modules, other tool elements, cluster tools, other tool interfaces, adjacent tools, adjacent tools, tools throughout the plant, main computer, another controller, or tools used in material transport that transport wafer containers to and from tool locations and / or loading ports. [Simplified Explanation of the Diagram]

[0090] This disclosure will be more fully understood from the embodiments and accompanying drawings, wherein:

[0091] Figure 1 shows an example of a substrate processing system including a processing chamber;

[0092] Figure 2 shows an example of a processing chamber containing multiple workstations;

[0093] Figure 3 shows a cross-sectional view of the processing chamber in Figure 2;

[0094] Figure 4 shows the spindle arm used to transfer the substrate between the workstations in Figure 2;

[0095] Figure 5 shows another example of a processing chamber containing multiple workstations;

[0096] Figure 6 shows the gas lines of the flushing system of this disclosure that can be used in the processing chambers of Figures 2 and 5;

[0097] Figure 7 shows the interconnection of the gas pipelines;

[0098] Figure 8 shows an example of an inlet for a lining, which is part of the flushing system and workstation shown in Figures 2 and 5;

[0099] Figure 9 shows an example of a surface-mount assembly used to interconnect multiple elements or sections of a gas pipeline;

[0100] Figure 10 shows a top view and a bottom view of one of the linings;

[0101] Figure 11 shows a top view and a bottom view of one of these linings in more detail;

[0102] Figure 12 shows a channel in one of the liners, which is used to distribute flushing gas to the spindle arm to prevent deposited material from accumulating on the spindle arm;

[0103] Figures 13 and 14 show the various components or sections of the gas pipeline and its interconnecting assemblies;

[0104] Figure 15 shows details of the structure of one of these interconnect components;

[0105] Figure 16 shows details of the structure of the inlet, which supplies flushing gas from the gas line to a channel in the liner to flush the spindle arm;

[0106] Figure 17 shows details of the structure of another interconnect component; and

[0107] Figure 18 shows a flowchart of a method for rinsing the spindle arm during wafer processing.

[0108] In the diagram, component symbols may be reused to distinguish similar and / or identical components.

Claims

1. A substrate processing system comprising: a plurality of spindle arms positioned above a plurality of workstations in a processing chamber for transporting a semiconductor substrate between the workstations, wherein, When processing the semiconductor substrate, the spindle arms reside in the processing chamber; a first gas line is provided below the workstations to supply rinsing gas; And a second gas line, which is disposed around the workstations and extends upward from the first gas lines, for supplying the rinsing gas to the spindle arms when processing the semiconductor substrate in the processing chamber.

2. The substrate processing system of claim 1 further includes a channel disposed near the top of each of the workstations, the channel being in fluid communication with one of the second gas lines, and including an outlet for supplying the flushing gas to one of the spindle arms.

3. The substrate processing system of claim 2 further includes a connection component for connecting the channel to the second gas line.

4. The substrate processing system of claim 3, wherein the connection component includes an orifice for controlling the flow rate of the flushing gas into the channel.

5. The substrate processing system of claim 1 further includes a channel disposed near the top of each of the workstations, the channel being in fluid communication with one of the second gas lines, and having an outlet near each end of the channel for supplying the flushing gas to the two spindle arms located on either side of the channel.

6. The substrate processing system of claim 2 further includes a liner that forms a liner on the top of each of the workstations, the liner including the channel.

7. The substrate processing system of claim 6, wherein the liner and the channel are disposed around the workstations.

8. The substrate processing system of claim 1 further includes a source that supplies the rinsing gas to the first gas lines via a regulator, the regulator adjusting the flow rate of the rinsing gas to the first gas lines.

9. The substrate processing system of claim 1 further includes a controller for: controlling the processing performed on the semiconductor substrate; controlling the spindle arms during the processing to transfer the semiconductor substrate between the workstations; and controlling the flow rate of the rinsing gas supplied to the first gas lines.

10. The substrate processing system of claim 1 further includes a spindle located at the center of the processing chamber for laterally moving the spindle arms across the workstations disposed around the center.

11. A substrate processing system comprising: a plurality of gas lines disposed around the base of N workstations along a plane, the N workstations being disposed around the center of a processing chamber for processing a semiconductor substrate, wherein N is an integer greater than 2; and N liners forming liner layers on the periphery of the tops of the N workstations, each of the N liners extending outward from the periphery parallel to the plane and including a channel in fluid communication with the plurality of gas lines, the channel being disposed along the periphery, having a closed first and second end near the center of the processing chamber, and including an outlet at each of the first and second ends for laterally distributing gas from the periphery; N spindle arms for transferring the semiconductor substrate between the N workstations, each of the N spindle arms extending laterally parallel to the plane from a spindle at the center of the processing chamber, disposed between adjacent pairs of the N liner, and including a region that contacts the semiconductor substrate during the transfer operation, the regions being adjacent to the outlets of the channels of the adjacent pairs of the N liner; and N vertical gas lines disposed at the periphery of the N workstations, each of the N vertical gas lines being in fluid communication with the plurality of gas lines and in fluid communication with the channels of the N liners.

12. The substrate processing system of claim 11, wherein each of the N vertical gas lines is connected to a corresponding channel via an inlet leading to a corresponding one of the N liners, the inlet having an orifice in fluid communication with the corresponding channel.

13. The substrate processing system of claim 12, wherein the inlet comprises: a connector connected to a corresponding one of the N vertical gas lines; an O-ring surrounding the orifice of the inlet, the O-ring connecting the orifice to the corresponding channel; and a plurality of recesses for aligning the inlet with the corresponding one of the N liners.

14. The substrate processing system of claim 11, wherein: Each of these channels includes a plurality of the outlets; and the regions of each of the N spindle arms that contact the semiconductor substrate are adjacent to the plurality of outlets of the channels of the corresponding adjacent pairs in the N linings.

15. The substrate processing system of claim 11, wherein the plurality of gas lines are interconnected by connecting components, and wherein each of the connecting components comprises: a first portion connected to a first gas line of the plurality of gas lines; a second portion connected to a second gas line of the plurality of gas lines; an O-ring connecting the first and second portions; and a plurality of vacuum screws disposed around the O-ring and engaging the first and second portions, wherein the first and second gas lines are in fluid communication via the first and second portions.

16. The substrate processing system of claim 11, wherein each of the N vertical gas lines is positioned away from the vertical travel path of the semiconductor substrate among the N workstations.

17. The substrate processing system of claim 11, wherein the plurality of gas lines are connected to a gas source located outside the processing chamber, the system further comprising: a pressure regulator disposed outside the processing chamber for regulating the flow rate of the gas supplied from the source to the plurality of gas lines.

18. The substrate processing system of claim 11, wherein the outlets of the channels of the N liners output the gas to the regions of the N spindle arms during the processing of the semiconductor substrate.

19. The substrate processing system of claim 11, wherein the outlets of the channels of the N liners output the gas to the regions of the N spindle arms, and wherein the gas prevents or reduces the deposition of material on the regions of the N spindle arms during the processing of the semiconductor substrate.

20. The substrate processing system of claim 11 further includes a controller for: controlling the processing performed on the semiconductor substrate; controlling the N spindle arms during the processing to transfer the semiconductor substrate between the N workstations; and controlling the flow rate of the gas supplied to the plurality of gas lines, wherein the outlets of the channels of the N liners output the gas to the regions of the N spindle arms to prevent or reduce the deposition of materials used in the processing on the regions of the N spindle arms.

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