Automated temperature controlled substrate support, cooling apparatus for use with such substrate support, and method for processing substrate

Abstract

This application provides methods and apparatus for processing substrates. For example, a cooling apparatus for use with a substrate support in a processing chamber includes: a heat exchanger; a manifold assembly including a first input, a second input, a first output, and a second output, the first input configured to be connected to an output of the heat exchanger, the second input configured to be connected to a first coolant supply, the first output configured to be connected to the substrate support of the processing chamber, the second output configured to be connected to an input of the heat exchanger, the first coolant supply configured to supply a first coolant; a gas input configured to be connected to a second coolant supply configured to supply a second coolant different from the first coolant to the substrate support; a first three-way valve connected between the first output of the manifold assembly and the substrate support, and the first three-way valve also connected between the gas input and the substrate support; and a controller configured to control the supply of either the first coolant or the second coolant during operation.

Description

Technical Field

[0001] The embodiments disclosed herein generally relate to plasma processing chambers, and more specifically, to plasma processing chambers including automated temperature-controlled substrate supports. Prior Technology

[0002] Plasma processing chambers, including temperature-controlled substrate supports (such as wafer pedestals), are known. For example, during operation, one or more heating devices (such as resistance heaters) and cooling devices (such as coolant channels configured to receive one or more coolants) can be used to heat and / or cool the substrate support. For example, regarding the cooling device, the controller of the plasma processing chamber can be configured to supply one or more coolants to the coolant channels disposed on / in the substrate support. However, in some cases, if the user wants to change between hot and cold operation of the substrate support and needs to change the coolant (e.g., to a gaseous coolant or to a gaseous coolant), manual hardware modifications are required, which can be time-consuming, labor-intensive, and reduce yield. Furthermore, if the user wants to change the gaseous coolant to something like deionized (DI) water to cool the hot substrate support (such as a wafer pedestal / electrostatic chuck (ESC)), DI water may cause sufficient thermal stress on the substrate support, potentially leading to substrate support cracking. Furthermore, introducing deionized water into the heated substrate support can cause flash vaporiz of the deionized water, which may rupture the feed pipes connected to the coolant channels of the substrate support, thereby releasing superheated steam and / or boiling water into the operating environment and / or into the processing space of the plasma processing chamber. Summary of the Invention

[0003] This application provides methods and apparatus for processing substrates. In some embodiments, a cooling apparatus for use with a substrate support in a processing chamber includes: a heat exchanger; a manifold assembly including a first input, a second input, a first output, and a second output, the first input configured to be connected to an output of the heat exchanger, the second input configured to be connected to a first coolant supply, the first output configured to be connected to the substrate support of the processing chamber, the second output configured to be connected to an input of the heat exchanger, the first coolant supply configured to supply a first coolant; a gas input configured to be connected to a second coolant supply configured to supply a second coolant different from the first coolant to the substrate support; a first three-way valve connected between the first output of the manifold assembly and the substrate support, and the first three-way valve also connected between the gas input and the substrate support; and a controller configured to control the supply of either the first coolant or the second coolant during operation.

[0004] According to at least some embodiments, a temperature-controlled substrate support includes: a substrate support disposed in a processing chamber supporting a substrate, the substrate support including a plurality of coolant lines configured to allow coolant to flow through it during operation; a cooling device connected to the plurality of coolant lines of the substrate support, and the cooling device including: a heat exchanger; a manifold assembly including a first input, a second input, a first output, and a second output, the first input being connected to an output of the heat exchanger, and the second input being connected to a first coolant supply. A first output is connected to the substrate support of the processing chamber, a second output is connected to an input of the heat exchanger, a first coolant supply supplies a first coolant, a gas input is connected to a second coolant supply that supplies a second coolant different from the first coolant to the substrate support, a first three-way valve is connected between the first output of the manifold assembly and the substrate support, and the first three-way valve is also connected between the gas input and the substrate support, and a controller is configured to control the supply of either the first coolant or the second coolant during operation.

[0005] According to at least some embodiments, a method for processing a substrate includes the following steps: processing the substrate disposed on a substrate support; supplying a first coolant to the substrate support via a coolant supply line connected to the substrate support; determining a temperature of at least one of the substrate or the substrate support; supplying a second coolant to the substrate support based on the determined temperature via the coolant supply line for supplying the first coolant, the second coolant being different from the first coolant; and continuing to process the substrate.

[0006] Other and further embodiments of this disclosure are described below. Simple Explanation of the Diagram

[0007] The embodiments of this disclosure have been briefly summarized above and are discussed in more detail below, which can be understood by referring to the exemplary embodiments of this disclosure illustrated in the accompanying drawings. However, the accompanying drawings only illustrate typical embodiments of this disclosure, and since this disclosure allows for other equivalent embodiments, the accompanying drawings should not be considered as a limitation on the scope of this disclosure.

[0008] Figure 1 is a schematic cross-sectional view of a processing chamber according to at least some embodiments of the present disclosure.

[0009] Figure 2 is a diagram of a cooling device configured for use with the processing chamber of Figure 1, according to at least some embodiments of the present disclosure.

[0010] Figure 3 is a flowchart of a method for processing a substrate according to at least some embodiments of the present disclosure.

[0011] For ease of understanding, the same numerical designations are used to represent the same elements in the figures where possible. For clarity, the figures are not drawn to scale and may be simplified. Elements and features in one embodiment may be advantageously used in other embodiments without further description. Implementation

[0012] This article provides embodiments of a plasma processing chamber and its usage method, the plasma processing chamber including an automated temperature-controlled substrate support. For example, a cooling device for use with a substrate support of a processing chamber may include: a heat exchanger; a manifold assembly including a first input, a second input, a first output, and a second output, the first input configured to be connected to an output of the heat exchanger, the second input configured to be connected to a first coolant supply, the first output configured to be connected to the substrate support of the processing chamber, the second output configured to be connected to an input of the heat exchanger, the first coolant supply configured to supply a first coolant; a gas input configured to be connected to a second coolant supply configured to supply a second coolant different from the first coolant to the substrate support; a first three-way valve connected between the first output of the manifold assembly and the substrate support, and the first three-way valve connected between the gas input and the substrate support; and a controller configured to control the supply of one of the first coolant or the second coolant during operation. The cooling equipment and its usage methods described herein provide users with the ability to manually or automatically switch between hot and cold operation of substrate supports without altering the hardware. Furthermore, the cooling equipment and its usage methods described herein provide users with the ability to manually or automatically switch between gaseous coolants and deionized (DI) water to cool hot substrate supports (such as wafer pedestals / electrostatic chucks (ESCs)) without inflicting thermal stress on the substrate supports and / or causing deionized water flash evaporation.

[0013] Figure 1 illustrates a schematic side view of a processing chamber 100 (such as a plasma processing chamber) including a cooling device according to at least some embodiments of the present disclosure. In some embodiments, the processing chamber 100 is a PVD processing chamber suitable for sputtering deposited material on a substrate having a given diameter. Illustrative examples of suitable PVD chambers that may benefit from the present disclosure include PVD chambers commercially available from Applied Materials, Inc., Santa Clara, California. Other processing chambers available from Applied Materials and other manufacturers may also be adapted according to the embodiments described herein.

[0014] The processing chamber 100 typically includes an upper sidewall 102, a lower sidewall 103, a grounding connector 104, and a cover assembly 111 defining a body 105 that surrounds an interior space 106. A mounting plate 107 may be disposed between the upper sidewall 102 and the lower sidewall 103.

[0015] A substrate support 108 is disposed in the internal space 106 of the processing chamber 100. The substrate support 108 is configured to support a substrate having a given diameter (e.g., 150 mm, 200 mm, 300 mm, 450 mm, etc.). A substrate transfer port 109 is formed in the lower sidewall 103 for transferring the substrate in and out of the internal space 106.

[0016] Gas source 110 is coupled to processing chamber 100 to supply processing gas to internal space 106. In some embodiments, the processing gas may include, if desired, inert gas, non-reactive gas, and reactive gas. Examples of processing gases that may be supplied by gas source 110 include, but are not limited to, argon (Ar), helium (He), neon (Ne), nitrogen (N2), oxygen (O2), and water (H2O) vapor.

[0017] A pumping device 112 is coupled to a processing chamber 100 communicating with an internal space 106 to control the pressure in the internal space 106. During deposition, the pressure level in the processing chamber 100 can be maintained at about 1 mTorr to about 1 Torr, such as about 300 mTorr to about 500 mTorr.

[0018] Grounding adapter 104 may support a target, such as target 114. Target 114 is made of a material to be deposited on a substrate. In some embodiments, target 114 may be made of aluminum (Al), cobalt (Co), copper (Cu), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W), alloys thereof, combinations thereof, or the like. In some embodiments, processing chamber 100 is configured to deposit, for example, alumina (AlO2), aluminum oxynitride (such as ALON), Co, Cu, Ta, tantalum nitride (TaN), tantalum oxynitride (TaOxNy), Ti, titanium oxynitride (TiOxNy), W, or tungsten nitride (WN) on the substrate.

[0019] Target 114 may be coupled to a source component including a power supply 117 for target 114. In some embodiments, power supply 117 may be an RF power supply, which may be coupled to target 114 via a matching network 116. In some embodiments, power supply 117 may alternatively be a DC power supply, in which case matching network 116 is omitted. In some embodiments, power supply 117 may include both DC and RF power supplies.

[0020] The magnetron 170 is located above the target 114 and may include a plurality of magnets 172 supported by a base plate 174 connected to an axis 176 axially aligned with the central axis of the processing chamber 100 and the substrate 101. The magnets 172 generate a magnetic field near the front surface of the target 114 within the processing chamber 100 to generate plasma 165, thus causing a large flux of ions to bombard the target 114, resulting in sputtering emission from the target. The magnets 172 may rotate about the axis 176 to increase the uniformity of the magnetic field across the surface of the target 114. Generally, the magnets 172 are rotatable such that during rotation, the innermost magnet position is positioned above or outside the diameter of the substrate being processed (e.g., the distance from the axis of rotation to the innermost position of the magnet 172 is equal to or greater than the diameter of the substrate being processed).

[0021] Collimator 118 may be positioned within the internal space 106 between target 114 and substrate support 108. The central region 135 of collimator 118 typically corresponds to the diameter of the substrate being processed (e.g., equal to or substantially equal to the diameter of the substrate). Therefore, the peripheral region 133 of collimator 118 typically corresponds to an annular region radially outward of the substrate being processed (e.g., the inner diameter of peripheral region 133 is substantially equal to or greater than the diameter of the substrate). In some embodiments, collimator 118 may be electrically biased to control the ion flux to the substrate and the neutral angular distribution of particles at the substrate, as well as to increase the deposition rate due to the increased DC bias.

[0022] Collimator 118 is coupled to upper shield 113, which is then coupled to processing tool adapter 138. Processing tool adapter 138 may be made of a suitable conductive material compatible with the processing conditions in processing chamber 100. Insulating rings 156 and 157 are disposed on either side of processing tool adapter 138 to electrically isolate processing tool adapter 138 from grounding adapter 104. Insulating rings 156 and 157 may be made of a suitable process-compatible dielectric material.

[0023] In some embodiments, a first set of magnets 196 may be disposed adjacent to the grounding connector 104 to help generate a magnetic field to guide dislodged ions from the target 114 through the peripheral region 133. In some embodiments, a second set of magnets 194 may be disposed in a position to form a magnetic field between the bottom of the collimator 118 and the substrate to guide dislodged metal ions from the target 114 and distribute the ions more evenly above the substrate 101. In some embodiments, a third set of magnets 154 may be disposed between the first set of magnets 196 and the second set of magnets 194, and approximately at or below the center of the substrate-facing surface of the central region 135 of the collimator 118, to further guide metal ions toward the center of the substrate 101.

[0024] Processing tool adapter 138 includes one or more features to facilitate support of processing tools (such as collimator 118) within the internal space 106. For example, as shown in FIG1, processing tool adapter 138 includes a mounting ring or shelf 164 that extends in a radially inward direction to support the upper shield 113.

[0025] In some embodiments, a coolant passage 166 may be provided in the processing tool adapter 138 to facilitate coolant flow through the processing tool adapter 138 to remove heat generated during processing. For example, the coolant passage 166 may be coupled to a cooling device 153 (coolant source) to provide a suitable coolant, such as water (deionized water), nitrogen, argon or other inert gases, clean dry air (CDA), or corrosive gases. The coolant passage 166 advantageously removes heat from the processing tool (such as collimator 118) that is not easily transferred to other cooling chamber components (such as grounding adapter 104).

[0026] A radially inwardly extending lug (such as a mounting ring or shelf 164) is provided to support the upper shield 113 within a central opening in the interior space 106 of the processing chamber 100. In some embodiments, the shelf 164 is positioned near the coolant passage 166 to facilitate maximizing heat transfer from the collimator 118 to the coolant flowing in the coolant passage 166 during use.

[0027] In some embodiments, a lower shield 120 may be provided near the collimator 118 and inside the grounding adapter 104 or the upper sidewall 102. The lower shield 120 may include a tubular body 121 having a radially outwardly extending flange 122 disposed in the upper surface of the tubular body 121. The flange 122 provides a mating interface with the upper surface of the upper sidewall 102. In some embodiments, the tubular body 121 of the lower shield 120 may include a shoulder region 123, the inner diameter of which is smaller than the inner diameter of the remainder of the tubular body 121. In some embodiments, the inner surface of the tubular body 121 transitions radially inward along a tapered surface 124 to the inner surface of the shoulder region 123. A shielding ring 126 may be disposed in the processing chamber 100, adjacent to the lower shield 120 and between the lower shield 120 and the mounting plate 107. The shielding ring 126 may be at least partially disposed in the recess 128 formed by the opposite side of the shoulder region 123 of the lower shielding member 120 and the inner wall of the mounting plate 107.

[0028] In some embodiments, the shielding ring 126 may include an axially projecting annular sidewall 127, the inner diameter of which is larger than the outer diameter of the shoulder region 123 of the lower shielding 120. A radial flange 130 extends from the annular sidewall 127. The radial flange 130 includes a protrusion 132 formed on the lower surface of the radial flange 130. The protrusion 132 may be a circular ridge extending upward from the surface of the radial flange 130, the orientation being substantially parallel to the inner diameter surface of the annular sidewall 127 of the shielding ring 126. The protrusion 132 is generally adapted to mate with a groove 134 formed in an edge ring 136 disposed on the substrate support 108. The groove 134 may be a circular groove formed in the edge ring 136. The engagement of the protrusion 132 and the groove 134 centers the shielding ring 126 relative to the longitudinal axis of the substrate support 108. Through coordinated positioning and alignment between the substrate support 108 and the robot blade (not shown), the substrate 101 (shown as being supported on the lifting pin 140) is centered relative to the longitudinal axis of the substrate support 108.

[0029] RF power supply 180 may be coupled to processing chamber 100 via substrate support 108 to provide bias power between target 114 and substrate support 108. In some embodiments, a matching network (such as matching network 116) may be coupled between RF power supply 180 and substrate support 108. In some embodiments, RF power supply 180 may have a frequency between about 400 Hz and about 60 MHz, such as about 13.56 MHz. In some embodiments, RF power supply 180 provides an amplitude pulse-modulated phase-shift keying signal and provides the same RF power as the frequency at which matching network 116 operates, as will be described in more detail below.

[0030] During operation, a robot blade (not shown) on which a substrate 101 is mounted extends through a substrate transfer port 109. A substrate support 108 can be lowered to allow the substrate 101 to be transferred to a lifting pin 140, which extends from the substrate support 108. The raising and lowering of the substrate support 108 and / or the lifting pin 140 can be controlled by a driver 142 coupled to the substrate support 108. The substrate 101 can be lowered onto the substrate receiving surface 144 of the substrate support 108. With the substrate 101 positioned on the substrate receiving surface 144 of the substrate support 108, sputtering deposition can be performed on the substrate 101. An edge ring 136 can be electrically insulated from the substrate 101 during processing.

[0031] After sputtering deposition, the substrate 101 can be raised to a position separated from the substrate support 108 using the lifting pin 140. The raised position can be close to one or both of the shielding ring 126 and the reflector ring 148 adjacent to the mounting plate 107. The mounting plate 107 includes one or more lamps 150, which are coupled to the mounting plate 107 at a position between the lower surface of the reflector ring 148 and the concave surface 152 of the mounting plate 107. The lamps 150 provide light energy and / or radiant energy in the visible or near-visible wavelengths (such as infrared (IR) and / or ultraviolet (UV) spectra). The energy from the lamps 150 is focused radially inward toward the back (i.e., lower surface) of the substrate 101 to heat the substrate 101 and the material deposited thereon.

[0032] After the substrate 101 is brought to a predetermined temperature, it is lowered to a position on the substrate receiving surface 144 of the substrate support 108. The substrate 101 can be rapidly cooled via conduction using the thermal control channel 146 in the substrate support 108. For example, a cooling device 153 can be connected to the substrate support 108 and configured to provide one or more coolants to the substrate support. The substrate 101 can be removed from the processing chamber 100 for further processing via the substrate transfer port 109.

[0033] Controller 198 is coupled to processing chamber 100. Controller 198 includes a central processing unit 160, memory 158, and support circuitry 162. Controller 198 controls the process sequence, regulates the gas flow rate from gas source 110 into processing chamber 100, and controls the ion bombardment of target 114. Central processing unit 160 can be any form of general-purpose computer processor suitable for use in an industrial environment. Software programs (such as instructions) can be stored in memory 158 (such as non-transitory computer-readable storage media), such as random access memory, read-only memory, floppy disk or hard disk, or any other digital storage format. Support circuitry 162 is typically coupled to central processing unit 160 and may include cache, clock circuitry, input / output subsystems, power supply, and the like. When the central processing unit 160 executes a software common program, the software common program transforms the central processing unit into a purpose-purpose computer that controls the processing chamber 100, enabling processes performed according to embodiments of this disclosure (including the cooling process for the substrate support 108 disclosed below). The software common program can also be stored and / or executed by a second controller (not shown) located at a remote end of the processing chamber 100.

[0034] During processing, material is sputtered from target 114 and deposited onto the surface of substrate 101. Target 114 and substrate support 108 are biased relative to each other by power supply 117 or RF power supply 180 to maintain the plasma formed by the processing gas supplied by gas source 110. The DC pulse bias power applied to collimator 118 also helps control the ratio of ions to neutral particles passing through collimator 118, advantageously enhancing trench sidewall and bottom filling capabilities. Ions from the plasma are accelerated toward and strike the target 114, causing target material to displace from target 114. The displaced target material and processing gas form a layer with the desired composition on substrate 101.

[0035] Figure 2 is a diagram of a cooling device 153 configured for use with the processing chamber 100 of Figure 1, according to at least some embodiments of this disclosure. For example, the cooling device 153 includes a heat exchanger 200, a manifold assembly 202 (e.g., a manifold assembly available from CKD Corp.), a first coolant supply 204, a second coolant supply 206, a first three-way valve 208 (e.g., a three-way valve available from SMC Corp.), a gas inlet 209, and a controller 210 (e.g., a controller 198).

[0036] Manifold assembly 202 includes a first input 212 and a second input 216. The first input 212 is configured to be connected to an output 218 of a first coolant supply 204, which is connected to an output 214 of a heat exchanger 200. The second input 216 is also configured to be connected to the output 218 of the first coolant supply 204. In at least some embodiments, a tee can be used to split the output 218, such that a single output can be used to supply first coolant (e.g., deionized water) to both the first input 212 and the second input 216. Manifold assembly 202 also includes a first output 220 and a second output 222. The first output 220 is configured to be connected to a substrate support 108 of the processing chamber 100 via a first tee valve 208. The second output 222 is configured to be connected to an input 224 of the heat exchanger 200 via a first coolant replenishment line 229 to replenish the first coolant in the heat exchanger 200. For example, the output 218 of the first coolant supply is connected to the second input 216 and outputs from the second output 222 of the manifold assembly 202, thereby allowing the first coolant to be supplied to the heat exchanger 200 via the first coolant replenishment line 229.

[0037] A main pivot 205 is disposed in the cooling device 153 and includes a plurality of inputs / outputs connected to a heat exchanger 200, a first coolant supply 204, a second coolant supply 206, and a first three-way valve 208. For example, a gas input 209 on the main pivot 205 of the cooling device 153 is configured to connect to an output 226 of the second coolant supply 206, which is configured to supply a second coolant (e.g., at least one of argon, nitrogen, other rare or inert gases, or clean dry air (CDA)) to the substrate support 108 via the first three-way valve 208. In at least some embodiments, the second coolant is different from the first coolant. Furthermore, an output 215 on the main pivot 205 is connected to an input 224 of the heat exchanger 200.

[0038] The first three-way valve 208 is connected between the first output 220 of the manifold assembly 202 and the input 225 of the substrate support 108, and also between the gas input 209 and the input 225 of the substrate support 108. For example, the first output 220 of the manifold assembly 202 is connected to the input 211 of the first three-way valve 208 via the first coolant line input 232, and the gas input 209 is connected to the second coolant line input 234 via the output 217, and the second coolant line input 234 is connected to the input 213 of the first three-way valve 208. The output 233 of the first three-way valve 208 is connected to the input 225 of the substrate support 108 via the common coolant line input 235.

[0039] In at least some embodiments, the cooling device 153 may include a second three-way valve 228. For example, the second three-way valve 228 may be connected between the output 227 of the substrate support 108 and the input 224 of the heat exchanger 200. For example, a common coolant return line 236 connects from the output 227 of the substrate support 108 to the input 219, the input 219 to the output 221, and the output 221 to the input 237 of the second three-way valve 228. The second three-way valve 228 may have a diffuser 230 connected to the output 238 of the second three-way valve 228 and configured to release a second coolant during operation, such as during the purging of the first coolant line input 232. For example, the purging process may include a diffuser 230 purging first coolant from a thermal control channel 146 within the substrate support 108, a second coolant line inlet 234, a common coolant line inlet 235, and a common coolant return line 236 to a diffuser 230 of a second three-way valve 228. In at least some embodiments, one or more additional diffusers may also be provided. For example, an additional diffuser 231 may be provided on the common coolant return line 236 prior to the inlet 237 of the second three-way valve 228 to facilitate the purging process. One or more suitable gases may be used during the purging process. For example, the purging gas may include argon, nitrogen, other rare or inert gases, CDA, etc. In at least some embodiments, the purging gas may be nitrogen. In at least some embodiments, the common coolant return line 236 may be connected to the outlet 239 of the second three-way valve 228 and may be connected to the first coolant replenishment line 229.

[0040] Timer 240 may be connected to controller 210 (and / or controller 198) and preset to provide a control signal to controller 210 when the second coolant is changed to the first coolant. For example, in at least some embodiments, the preset time may be from about 5 minutes to about 15 minutes, such as about 10 minutes.

[0041] Controller 210 is configured to control the operation of cooling device 153 during operation. For example, controller 210 may be connected to controller 198 of processing chamber 100 to receive one or more command signals from controller 198. The command signals correspond to supplying a first coolant, supplying a second coolant, and performing purification of the first coolant based on a determined temperature for a specific formulation used for substrate processing prior to supplying the second coolant.

[0042] Figure 3 is a flowchart of a method 300 for processing a substrate according to at least some embodiments of the present disclosure. For example, at 302, method 300 may include the step of processing a substrate (e.g., substrate 101) disposed on a substrate support (e.g., substrate support 108). One or more plasma processes, such as physical vapor deposition (PVD), etching, etc., can be used to process the substrate. For example, in at least some embodiments, one or more PVD processes can be performed on the substrate.

[0043] During plasma processing, at 304, method 300 includes the step of supplying a first coolant to the substrate support via a coolant supply line connected to the substrate support. For example, when the substrate support 108 is operated below 200°C, cooling device 153, under the control of controller 210 (and / or controller 198) and based on the substrate processing formulation, supplies the first coolant to the substrate support 108. In at least some embodiments, the first coolant may be deionized water, other inert, high-efficiency, dielectric heat transfer fluid (PFPE) (such as heat transfer fluids sold under the Galden® trademark), etc., which may be supplied to the thermal control channel 146 of the substrate support 108. For example, controller 201 may transmit control signals to heat exchanger 200 and / or first coolant supply 204. The control signals instruct the first coolant supply 204 to supply the first coolant to the first input 212 and second input 216 of manifold assembly 202. The first coolant is output via the first output 220 of the manifold assembly 202 to the input 211 of the first three-way valve 208 and the input 225 of the substrate support 108, allowing the first coolant to flow through the thermal control channel 146 and cool the substrate support 108 and the substrate 101. Alternatively, the first coolant can also be output from the second output 222 of the manifold assembly 202, for example, to replenish the first coolant as needed. The first coolant can be returned to the heat exchanger 200 via a common coolant return line 236. In at least some embodiments, the common coolant return line 236 can be connected to a first coolant replenishment line 229, which is connected to the output 215 of the main pivot 205, which is connected to the input 224 of the heat exchanger 200. Alternatively, the common coolant return line 236 can be directly connected to the input 224 of the heat exchanger 200. The purification process can be performed for a predetermined time, such as from about 5 minutes to about 15 minutes, for example, 10 minutes. During period 304, controller 210 sends control signals to first three-way valve 208 and second three-way valve 228 (if used) to close input 213 of first three-way valve 208 and output 238 of second three-way valve 228.

[0044] The controller 210 can be configured to control the supply of the first and second coolants based on specific formulation requirements or based on the instantaneous temperature of the determined substrate support. For illustrative purposes, method 300 is described herein with reference to the latter.

[0045] For example, next, at 306, method 300 includes the step of determining a temperature of at least one of the substrate or the substrate support. For example, if the temperature of the substrate support 108 or the substrate 101 exceeds a predetermined value (e.g., 200°C), the controller 210 is configured to stop supplying a first coolant to the substrate support 108 and to purify the first coolant from the common coolant inlet 235, the thermal control channel 146, and the common coolant return line 236. For example, when the temperature of the substrate support 108 exceeds 200°C, the controller 210 sends a control signal to the heat exchanger 200 and / or the first coolant supply 204 to stop supplying the first coolant to the substrate support 108.

[0046] Next, controller 210 sends a control signal to second coolant supply 206 to supply one or more gases (such as nitrogen (N2), CDA, etc.) to purify the first coolant from the common coolant line inlet 235, thermal control channel 146, and common coolant return line 236. During the purification process, one or more gases used to purify the first coolant from the common coolant line inlet 235, thermal control channel 146, and common coolant return line 236 can be discharged through diffuser 230 and / or additional diffuser 231. Before being discharged through diffuser 230 and / or additional diffuser 231, the second coolant can pass through another heat exchanger 203 located within the main pivot 205 of cooling device 153. Furthermore, during the purification process, most of the first coolant can be returned to heat exchanger 200 via common coolant return line 236 (e.g., a portion of the first coolant can be discharged through diffuser 230 and / or additional diffuser 231).

[0047] Next, at 308, method 300 includes the step of: supplying a second coolant to the substrate support via a coolant supply line for supplying the first coolant at a determined temperature, the second coolant including but not limited to nitrogen (N... 2) Argon (or other rare gases), CDA, or other inert gases, etc., the second coolant differs from the first coolant. For example, controller 210 changes the valve configuration so that the second coolant can be supplied to substrate support 108. For example, the input 213 and output 238 of the first three-way valve and the second three-way valve 228 can be opened respectively, while the input 211 and output 239 of the first three-way valve and the second three-way valve 228 can be closed respectively. During 308, the second coolant can pass through heat exchanger 203 disposed in main pivot 205. Heat exchanger 203 is configured to cool the second coolant returning in common coolant return line 236 so that the second coolant can be discharged into the atmosphere through diffuser 230 and / or additional diffuser 231. For example, the heat exchanger 203 can cool the second coolant from a temperature between about 100°C and 250°C to about -30°C for safe release through diffuser 230 and / or additional diffuser 231.

[0048] Next, at 310, method 300 includes the following steps: continuing to process the substrate. For example, a second coolant is supplied to the substrate support 108 until the temperature of the substrate support 108 drops below a predetermined temperature (e.g., 200°C), or until the formulation requires heating the substrate to approximately 200°C or lower. Again, the controller 210 may be configured to wait for a predetermined time, such as approximately 5 minutes to approximately 15 minutes, for example, 10 minutes, before switching from the second coolant to the first coolant.

[0049] Although the foregoing description is directed to embodiments of this disclosure, other and further embodiments disclosed herein may be designed without departing from the basic scope of this disclosure.

[0050] 100: Processing Chamber 101:Substrate 102: Upper sidewall 103: Lower sidewall 104: Grounding connector 105: Main Body 106: Interior Space 107: Connecting plate 108: Substrate support 109: Substrate Transfer Port 110: Gas Source 111: Cover assembly 112: Pumping device 113: Upper shielding component 114: Target 116: Matching network 117: Power Supply 118: Collimator 120: Lower shielding component 121: Tubular body 122: Flange 123: Shoulder area 124: Conical surface 126: Shielding ring 127: Annular sidewall 128: Groove 130: Radial flange 132:convex part 133: Surrounding Area 134: Groove 135: Central Area 136: Edge ring 138: Processing Tool Adapter 140: Lifting pin 142: Driver 144: Substrate receiving surface 146: Thermal control channel 148: Reflector Ring 150: Lights 152: Concave surface 153: Cooling equipment 154: Third group of magnets 156: Insulating ring 157: Insulating Ring 158: Memory 160: Central Processing Unit 162: Support Circuit 164: Shelf 165: Plasma 166: Coolant passage 170: Magnetron 172: Magnet 174: Base plate 176: Axis 180: RF power supply 194: Second group of magnets 196: First group of magnets 198: Controller 200: Heat exchanger 202: Manifold Assembly 203: Heat Exchanger 204: First Coolant Supply 206: Second Coolant Supply 208: First three-way valve 209: Gas Input 210: Controller 211: Input 212: First Input 213: Input 214: Output 216: Second Input 218: Output 220: First Output 222: Second Output 224: Input 225: Input 226: Output 227: Output 228: Second three-way valve 229: First coolant replenishment line 230: Diffuser 231: Diffuser 232: First coolant line input 233: Output 234: Second coolant line inlet 235: Coolant line inlet 236: Coolant return line 237: Input 238: Output 239: Output 240: Timer 300: Method 302: Steps 304: Steps 306: Steps 308: Steps 310: Steps

[0051] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A cooling device for use with a substrate support in a processing chamber, comprising: A heat exchanger; A manifold assembly including a first input, a second input, a first output, and a second output, the first input configured to be connected to an output of a heat exchanger, the second input configured to be connected to a first coolant supply, the first output configured to be connected to a substrate support of a processing chamber, the second output configured to be connected to an input of the heat exchanger, and the first coolant supply configured to supply a first coolant; a gas input configured to be connected to a second coolant supply configured to supply a second coolant, different from the first coolant, to the substrate support; a first three-way valve connected between the first output of the manifold assembly and the substrate support, and also connected between the gas input and the substrate support; and a controller configured to control the supply of either the first coolant or the second coolant during operation.

2. The cooling device as claimed in claim 1, wherein the first coolant is deionized water.

3. The cooling device as claimed in claim 1, wherein the second coolant is at least one of argon, nitrogen, or clean, dry air.

4. The cooling device as claimed in claim 1, wherein the first three-way valve is connected to the second input of the manifold assembly.

5. The cooling device as claimed in claim 1, further comprising a second three-way valve connected between an output of the substrate support and the input of the heat exchanger.

6. The cooling device as claimed in claim 5, wherein the second three-way valve includes a diffuser for releasing the second coolant during the purification of a coolant line connected to the substrate support.

7. The cooling device as described in any one of claims 1 to 6, further comprising a timer connected to the controller and preset to provide a control signal to the controller when the second coolant is changed to the first coolant.

8. A temperature-controlled substrate support, comprising: A substrate support is disposed in a processing chamber to support a substrate, the substrate support including a plurality of coolant lines configured to allow coolant to flow through it during operation; A cooling device connected to the plurality of coolant lines of the substrate support, and the cooling device includes: a heat exchanger; A manifold assembly including a first input, a second input, a first output, and a second output, the first input being connected to an output of a heat exchanger, the second input being connected to a first coolant supply, the first output being connected to a substrate support of a processing chamber, and the second output being connected to an input of the heat exchanger, the first coolant supply supplying a first coolant; a gas input connected to a second coolant supply supplying a second coolant different from the first coolant to the substrate support; a first three-way valve connected between the first output of the manifold assembly and the substrate support, and the first three-way valve also connected between the gas input and the substrate support; and a controller configured to control the supply of either the first coolant or the second coolant during operation.

9. The temperature-controlled substrate support as described in claim 8, wherein the first coolant is deionized water.

10. The temperature-controlled substrate support as claimed in claim 8, wherein the second coolant is at least one of argon, nitrogen, or clean, dry air.

11. The temperature-controlled substrate support as claimed in claim 8, wherein the first three-way valve is connected to the second input of the manifold assembly.

12. The temperature-controlled substrate support as claimed in claim 8, further comprising a second three-way valve connected between an output of the substrate support and an input of the heat exchanger.

13. The temperature-controlled substrate support as claimed in claim 12, wherein the second three-way valve includes a diffuser for releasing the second coolant during the purging of the plurality of coolant lines connected to the substrate support.

14. The temperature-controlled substrate support as described in any one of claims 8 to 13, further comprising a timer connected to the controller and preset to provide a control signal to the controller when the second coolant is changed to the first coolant.

15. A method for processing a substrate, comprising the steps of: processing the substrate disposed on a substrate support; supplying a first coolant to the substrate support via a coolant supply line connected to the substrate support through a three-way valve; determining a temperature of at least one of the substrate or the substrate support; supplying a second coolant, different from the first coolant, to the substrate support via the coolant supply line for supplying the first coolant based on the determined temperature through the three-way valve; and continuing to process the substrate.

16. The method as described in claim 15, wherein the step of supplying the first coolant includes the step of supplying deionized water.

17. The method as described in claim 15, wherein the step of supplying the second coolant comprises the step of supplying at least one of argon, nitrogen, or clean, dry air.

18. The method as described in claim 15 further includes the step of: when the determined temperature is equal to or greater than a first predetermined value, purifying the coolant supply line with at least one of argon, nitrogen, or clean dry air, wherein the first predetermined value is approximately 200°C.

19. The method as described in claim 15 further includes the step of: stopping the supply of the first coolant to the substrate support for a predetermined time when the determined temperature is less than a first predetermined value, wherein the first predetermined value is approximately 200°C.

20. The method as described in claim 19, wherein the predetermined time is about 5 minutes to about 10 minutes.

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