Shield and apparatus for processing a substrate using improved shield configurations

Abstract

This document provides methods and apparatus for processing substrates using improved shielding configurations. For example, a processing kit for a physical vapor deposition chamber includes a shield comprising an inner wall having an upper portion having a first wave-shaped fin configuration and a lower portion having a second wave-shaped fin configuration different from the first wave-shaped fin configuration, such that the surface area of ​​the shield is approximately 1400 square inches to approximately 1410 square inches.

Description

[Technical Field]

[0001] Embodiments of this disclosure generally relate to methods and apparatus for processing substrates, and more specifically, to methods and apparatus for processing substrates using an improved shielding configuration. [Previous Technology]

[0002] The magnitude of the target self-bias voltage affects the sputtering rate of the target and anode (e.g., shielding, wafer, etc.) materials. Typically, a higher negative self-bias voltage on the target is obtained by using an extremely wide body chamber, thereby increasing the anode area. However, this approach leads to an increase in the footprint of the PVD chamber. [Summary of the Invention]

[0003] This document provides methods and apparatus for processing a substrate using an improved shielding configuration. In some embodiments, a processing kit for a physical vapor deposition chamber includes a shielding that includes an inner wall having an upper portion having a first wave-shaped fin configuration and a lower portion having a second wave-shaped fin configuration different from the first wave-shaped fin configuration, such that the surface area of ​​the shield is approximately 1400 square inches to approximately 1410 square inches.

[0004] According to at least some embodiments, the substrate processing apparatus includes: a chamber body in which a substrate support is disposed; a target coupled to the chamber body and opposite to the substrate support; an RF power supply for forming plasma within the chamber body; and a shield including an inner wall, the inner wall including an upper portion having a first waveform fin configuration and a lower portion having a second waveform fin configuration different from the first waveform fin configuration, such that the surface area of ​​the shield is about 1400 square inches to about 1410 square inches².

[0005] According to at least some embodiments, a processing kit for use in a physical vapor deposition chamber includes a shield, the shield including an inner wall having an upper portion having a different first waveform fin configuration and a bottom portion having a second waveform fin configuration different from the first waveform fin configuration, such that the surface area of ​​the shield is about 1400 square inches to about 1400 square inches, wherein the second waveform fin configuration has a discontinuous, generally sinusoidal configuration, and wherein the first waveform fin configuration has a generally V-shaped bottom extending away from the inner wall of the shield.

[0006] Other and further embodiments of this disclosure are described below.

Implementation Method

[0013] This document provides methods and apparatus for improving physical vapor deposition (PVD) processing equipment. PVD processing can advantageously be high-density plasma-assisted PVD processing, as described below. In at least some embodiments of this disclosure, the improved methods and apparatus provide a grounding shield for the PVD processing apparatus, which can advantageously reduce the potential difference of the grounding shield while maintaining the target-substrate spacing, thereby facilitating PVD processing and reducing or eliminating re-sputtering of the grounding shield. For example, the shield includes an inner wall comprising an upper portion having a first wave-shaped fin configuration and a bottom portion having a second wave-shaped fin configuration different from the first wave-shaped fin configuration, such that the surface area of ​​the shield is about 1000 square inches to about 1410 square inches. Surface area is defined as the inner surface area of ​​the shield (e.g., the inner surface area of ​​the processing volume exposed to the processing chamber).

[0014] FIG1 is a schematic cross-sectional view of a processing chamber 100 (e.g., a substrate processing apparatus, such as a physical vapor deposition chamber) according to some embodiments of the present disclosure. Specific configurations of the PVD chamber are illustrated herein, and PVD chambers with other configurations may also benefit from modifications based on the teachings provided herein. Examples of suitable PVD chambers include any family of PVD processing chambers commercially available from Applied Materials, Inc., Santa Clara, California. Other processing chambers from Applied Materials, Inc. or other manufacturers may also benefit from the apparatus of the present invention disclosed herein.

[0015] In some embodiments of this disclosure, the processing chamber 100 includes a chamber cover 101 disposed on top of and removable from the chamber body 104. The chamber cover 101 typically includes a target assembly 102 and a grounding assembly 103. The chamber body 104 includes a substrate support 106 for receiving a substrate 108 thereon. The substrate support 106 is configured to support the substrate such that the center of the substrate is aligned with the central axis 186 of the processing chamber 100. The substrate support 106 may be located within a lower grounded housing wall 110, which may be a wall of the chamber body 104. The lower grounded housing wall 110 may be electrically coupled to the grounding assembly 103 of the chamber cover 101, such that an RF return path is provided to an RF power supply 182 disposed above the chamber cover 101. Alternatively, other RF return paths are possible, such as those from the substrate support 106 through the processing kit shield (e.g., ground shield (e.g., anode)) and ultimately back to the grounding assembly 103 of the chamber cover 101. The RF power supply 182 can provide RF energy to the target assembly 102, as described below.

[0016] The substrate support 106 has a material receiving surface facing the main surface of the target 114 (e.g., a cathode opposite the substrate support), and supports the substrate 108 to sputter material ejected from the target 114 at a planar position opposite the main surface of the target 114. The substrate support 106 may include a dielectric member 105 having a substrate processing surface 109 for supporting the substrate 108 thereon. In some embodiments, the substrate support 106 may include one or more conductive members 107 disposed below the dielectric member 105. For example, the dielectric member 105 and one or more conductive members 107 may be part of an electrostatic chuck, an RF electrode, etc., which can be used to provide clamping or RF power to the substrate support 106.

[0017] The substrate support 106 can support the substrate 108 in a first volume 120 (processing volume) of the chamber body 104. The first volume 120 is a part of the internal volume of the chamber body 104 for processing the substrate 108 and can be separated from the rest of the internal volume (e.g., non-processing volume) during the processing of the substrate 108 (e.g., through shield 138). The first volume 120 is defined as the region above the substrate support 106 during processing (e.g., between the target 114 and the substrate support 106 when in the processing position).

[0018] In some embodiments, the substrate support 106 may be vertically movable to allow the substrate 108 to be transferred through an opening (e.g., a slit valve, not shown) in the lower part of the chamber body 104 onto the substrate support 106 and then raised to a processing position. A bellows 122 connected to the bottom chamber wall 124 may be provided to maintain the separation of the internal volume of the chamber body 104 from the atmosphere outside the chamber body 104. One or more gases may be supplied from the gas source 126 through a mass flow controller 128 to the lower part of the chamber body 104. An exhaust port 130 may be provided and connected through a valve 132 to a pump (not shown) for venting the interior of the chamber body 104 and to help maintain the required pressure within the chamber body 104.

[0019] The RF bias power supply 134 may be coupled to the substrate support 106 to induce a negative DC bias on the substrate 108. Additionally, in some embodiments, a negative DC self-bias may be formed on the substrate 108 during processing. In some embodiments, the RF energy provided by the RF bias power supply 134 may be in a frequency range from about 2 MHz to about 60 MHz; for example, non-limiting frequencies such as 2 MHz, 13.56 MHz, or 60 MHz may be used. In other applications, the substrate support 106 may be grounded or remain electrically floating. Alternatively or additionally, a capacitor tuner 136 may be coupled to the substrate support 106 to adjust the voltage on the substrate 108 for applications where RF bias power is not required.

[0020] Shielding 138 (e.g., grounding processing kit shielding) may be made of one or more suitable materials, including but not limited to aluminum alloys, stainless steel, and / or titanium. For example, in at least some embodiments, shielding 138 may be made of stainless steel. Furthermore, shielding 138 may be manufactured using one or more manufacturing processes. For example, in at least some embodiments, shielding 138 may be manufactured using one or more 3D printing processes. Alternatively, shielding 138 may be manufactured using one or more other known processes.

[0021] Shield 138 surrounds a first volume 120 of chamber body 104 to protect other chamber components from damage and / or contamination from processing. In some embodiments, shield 138 may be coupled to a flange 140 of the upper grounded outer shell wall 116 of chamber body 104. In other embodiments, as shown in FIG1, shield 138 may be connected to chamber cover 101, for example, via a retaining ring (not shown).

[0022] The shield 138 includes an inner wall 143 disposed between the target 114 and the substrate support 106. In at least some embodiments, the inner wall 143 has an innermost diameter configured to surround the target 114 when disposed in the processing chamber 100. In at least some embodiments, the ratio of the surface area of ​​the shield 138 to the planar area of ​​the inner diameter is about 3 to about 10. The height of the shield 138 depends on the substrate distance 185 between the target 114 and the substrate 108. For example, in at least some embodiments, the substrate distance 185 between the target 114 and the substrate 108 may be about 69 mm. The substrate distance 185 between the target 114 and the substrate 108, and the corresponding height of the shield 138, may be scaled based on the diameter of the substrate 108. In some embodiments, the ratio of the diameter of the target 114 to the diameter of the substrate is about 1.4. For example, a processing chamber for processing a 300mm substrate may have a target 114 with a diameter of about 419mm, or in some embodiments, a processing chamber for processing a 450mm substrate may have a target 114 with a diameter of about 625mm. In some embodiments, the ratio of the diameter of the target 114 to the height of the shield 138 is about 4.1 to about 4.3, or in some embodiments, about 4.2. For example, in some embodiments of a processing chamber for processing a 300mm substrate, the target 114 may have a diameter of about 419mm and the shield 138 may have a height of about 100mm, or in some embodiments of a processing chamber for processing a 450mm substrate, the target 114 may have a diameter of about 625mm and the shield 138 may have a height of about 150mm. Other diameters and heights may also be used to provide the desired ratio. In the processing chamber having the above-described ratio, the substrate distance 185 between the target 114 and the substrate 108 is approximately 50.8 mm to approximately 152.4 mm for a 300 mm substrate or approximately 101.6 mm to approximately 203.2 mm for a 450 mm substrate. The processing chamber having the above-described configuration is referred to herein as a "short-range" processing chamber.

[0023] Short-pitch processing chambers advantageously increase deposition rates compared to processing chambers with a longer target-to-substrate distance of 185. For example, for some processes, conventional processing chambers with a longer target-to-substrate distance of 185 provide deposition rates of about 1 to about 2 angstroms per second. In contrast, for similar processes in short-pitch processing chambers, deposition rates of about 5 to about 10 angstroms per second can be achieved while maintaining a high degree of ionization. In some embodiments, processing chambers according to embodiments of the present disclosure can provide a deposition rate of about 10 angstroms per second. Such a high degree of ionization at such a short pitch can be achieved by providing high voltage (e.g., about 60 mTorr to about 140 mTorr) and very high drive frequencies (e.g., about 27 MHz to about 162 MHz, such as commercially available frequencies such as 27.12, 40.68, 60, 81.36, 100, 122 or 162.72 MHz).

[0024] Furthermore, electrons have a higher mobility than ions, and during their respective half-cycles, both electrodes (e.g., cathode or energized electrode and anode or grounded electrode) rapidly acquire electrons until the electrodes can no longer attract more electrons generated by the repulsion of accumulated electrons. During the negative half-cycle, both electrodes attract positive ions, but due to the lower ion mobility, the electrodes do not neutralize all electrons and acquire a net negative bias relative to the plasma.

[0025] The inventors have discovered that if the areas of the electrodes (cathode (target) and anode (shield, wafer, deposition ring, capping ring, etc.)) are comparable, ions generated in the plasma will be attracted toward the two electrodes in equal proportions during their respective negative half-cycles, which in turn leads to the sputtering of material from the two electrodes in equal proportions. However, in RF sputtering deposition, the area of ​​the target is typically smaller than the area of ​​the anode (shield, wafer, deposition ring, capping ring, etc.) (e.g., which helps to achieve more deposition and less etching on the anode side), which in turn leads to a larger negative bias, resulting in a higher electric field that accelerates ions toward the target. Therefore, depending on the area of ​​the target (cathode) relative to the shield (anode), there will be deposition (sputtering deposition) from the target or etching (resputtering) from the anode (wafer, shield, deposition ring, etc.).

[0026] Resputtering of the shield 138 can cause undesirable contamination within the processing chamber 100. Resputtering of the shield 138 is a result of high voltage on the shield 138. The amount of voltage appearing on the target 114 (e.g., cathode or energized electrode) and the grounded shield 138 (e.g., anode or grounded electrode) depends on the ratio of the surface area of ​​the shield 138 to the surface area of ​​the target 114, as larger voltages occur on the smaller electrode. Sometimes, the surface area of ​​the target 114 may be larger than the surface area of ​​the shield 138, resulting in a larger voltage on the shield 138, which in turn leads to undesirable resputtering of the shield 138. For example, in some embodiments of a processing chamber for processing 300mm substrates, the target may have a diameter of about 419mm and a corresponding surface area of ​​about 138mm², and the shield 138 may have a height of about 100mm and a corresponding surface area of ​​about 132mm². Alternatively, in some embodiments of a processing chamber for processing 450mm substrates, the target may have a diameter of about 625mm and a corresponding surface area of ​​about 307mm², and the shield 138 may have a height of about 150mm and a corresponding surface area of ​​about 295mm². The inventors have observed that in some embodiments of the processing chamber where the ratio of the surface area of ​​the shield 138 to the surface area of ​​the target 114 is less than 1, a larger voltage is generated on the shield 138, which in turn leads to undesirable re-sputtering of the shield 138. Therefore, in order to advantageously minimize or prevent re-sputtering of the shield 138, the inventors have observed that the surface area of ​​the shield 138 (e.g., the inner surface area exposed to the processing volume of the processing chamber) needs to be larger than the surface area of ​​the target 114. For example, the inventors have observed that a ratio of about 3 to about 10 of the surface area of ​​the shield 138 to the surface area of ​​the target 114 advantageously minimizes or prevents resputtering of the shield 138.

[0027] In addition, the inventors have observed that a surface area ratio of about 3 to about 10 of the shield 138 to the surface area of ​​the target 114 advantageously provides a relatively high negative self-bias at the target 114. For example, the relatively high negative self-bias at the target 114 attracts more positive plasma ions (e.g., argon ions) to the target 114 during operation, which in turn increases target sputtering and reduces re-sputtering (e.g., etching) of the shield 138, the deposition ring (not shown), the substrate 108, or other components.

[0028] However, as described above, due to the required ratio of the diameter of the target 114 to the height of the shield 138, the surface area of ​​the shield 138 cannot be increased simply by increasing the height of the shield 138. The inventors have observed that in some embodiments of a processing chamber having the aforementioned processing conditions (e.g., the processing pressure and RF frequency used), the ratio of the surface area of ​​the shield 138 to the height of the shield 138 must be approximately 2 to approximately 3 to advantageously minimize or prevent resputtering of the shield 138. Furthermore, due to the physical limitations of the processing chamber size, the diameter of the shield 138 cannot be increased sufficiently to increase the surface area of ​​the shield 138 to prevent resputtering of the shield 138. For example, an increase of 25.4 mm in the diameter of the shield 138 results in only a 6% increase in surface area, which is insufficient to prevent resputtering of the shield 138.

[0029] According to some embodiments of the present disclosure, FIG2 is a cross-sectional view of the shield 200, FIG3 is an enlarged view of the detailed area shown in FIG2, and FIG4 is an enlarged view of the detailed area shown in FIG2. For example, as depicted in FIG2, in order to obtain the ratio of the surface area of ​​the shield to the surface area of ​​the target, the shield 200 configured for use with the processing chamber 100 includes an inner wall 203 having an innermost diameter D1, which, when disposed in the processing chamber 100, is configured to surround the target. For example, the innermost diameter D1 may be larger than the diameter of the target. In at least some embodiments, the innermost diameter D1, measured from the flange 201 of the shield 200, may be about 14.5 inches to about 14.75 inches, for example, 14.6 inches. Similarly, in at least some embodiments, the outermost diameter D2, also measured from the flange 201, may be about 16 inches to about 16.5 inches, for example, 16.25 inches. Flange 201 is adjacent to the upper portion of inner wall 203 and is configured to rest on or couple to a support member of processing chamber 100, as described in more detail below. Furthermore, in at least some embodiments, the distance D3 from the bottom surface 209 of bottom 207 of shield 200 to the top surface 211 of flange 201 is approximately 3 inches to approximately 3.5 inches, for example, 3.25 inches.

[0030] Furthermore, to achieve a larger anode area, the inner wall 203 includes an upper portion 205 having a first wave-shaped fin configuration 300 (FIG. 3) and a bottom portion 207 having a second wave-shaped fin configuration 400 (FIG. 4) different from the first wave-shaped fin configuration 300. Having the wave-shaped fin configuration shown in FIG. 2-4 helps to provide shielding with a surface area of ​​approximately 1000 square inches to approximately 1410 square inches (e.g., approximately 1400 square inches to approximately 1404 square inches), thereby providing a highly insulating dielectric target that can be deposited by increasing the negative self-bias voltage on the target.

[0031] The shield 138, the first wave fin configuration 300, and the second wave fin configuration 400 can be integrally manufactured using, for example, a 3D printing process. Alternatively, the shield 138 can be formed using one or more manufacturing processes other than 3D printing, and the first wave fin configuration 300 and the second wave fin configuration 400 can be manufactured using 3D printing and then attached to the shield 138 using one or more coupling devices, such as nuts, bolts, screws, welding, etc.

[0032] For example, the first wave-shaped fin configuration 300 has a generally V-shaped bottom 302 and a vertical top 304 connected to the inner wall 203. The V-shaped bottom 302 and the vertical top 304 define fins of the first wave-shaped fin configuration extending along the inner wall 203. In at least some embodiments, the first wave-shaped fin configuration 300 has a diameter D4 of about 14 inches to about 14.50 inches (e.g., 14.25 inches) measured from the vertical top 304 and a diameter D5 of about 15 inches to about 15.25 inches (e.g., 15.15 inches) measured at the point where the V-shaped bottom 302 connects to the inner wall 203, see, for example, FIG2.

[0033] The inner wall 203 of the shield 200 may have one or more fins of a first wave-shaped fin configuration 300 arranged thereal. For example, in the illustrated embodiment, the inner wall 203 is shown as comprising two (upper and lower) fins vertically aligned with each other. Each of the two fins may be substantially identical to each other. For example, the upper and lower fins of the first wave-shaped fin configuration 300 may have the same vertical top 304 and different V-shaped bottoms 302 to facilitate the fabrication of the first wave-shaped fin configuration 300. For example, in at least some embodiments, the upper fin of the first wave-shaped fin configuration 300 may have an extension 306 connected to the inner wall 203, and the lower fin of the first wave-shaped fin configuration 300 may have a V-shaped bottom 302 directly connected to the inner wall 203 (see, for example, FIG. 3).

[0034] The second wave-shaped fin configuration 400 has a plurality of fins having a generally sinusoidal configuration 401 and alternating generally V-shaped ends 402. The generally V-shaped ends 402 may have the same general configuration. For example, in the illustrated embodiment, the generally V-shaped ends 402 may include two diverging ends. For example, the generally V-shaped ends 402 may include a first portion 404 extending toward the inner wall 203 and a second portion 406 extending away from the inner wall 203. The first portion 404 and the second portion 406 may have the same length or different lengths. For example, in the illustrated embodiment, the V-shaped ends located closest to the cover ring where the shield 200 connects to the processing chamber 100 may have the same length for the first portion 404 and the second portion 406, while the remaining V-shaped ends may have the first portion 404 and the second portion 406 with different lengths.

[0035] The second wave-shaped fin configuration 400 may have a continuous or discontinuous configuration. For example, in at least some embodiments, the second wave-shaped fin configuration 400 has a discontinuous configuration. For example, an annular groove 408 may extend along a generally sinusoidal configuration 401 of the second wave-shaped fin configuration 400. The annular groove 408 may have one or more suitable shapes, such as curved, straight, etc. For example, the annular groove 408 may have a generally rhomboid or triangular shape. In at least some embodiments, the annular groove may have a plurality of rhomboid cutouts.

[0036] The distance D6 from the bottom surface 209 of the shield 200 to the top of the fin without the V-shaped end can be about 1.6 inches. Similarly, the distance D7 from the bottom surface 209 of the shield 200 to the top of the fin with the V-shaped end can be about 1.8 inches.

[0037] The thickness T1 of each fin in the first wave-shaped fin configuration 300 and the second wave-shaped fin configuration 400 is approximately 0.08 inches. The gap G1 between each fin in the first wave-shaped fin configuration 300 and the second wave-shaped fin configuration 400 can be approximately 0.175 inches.

[0038] The inventors have discovered that providing distances D1-D7, thickness T1, and gap G1 as described herein reduces, even if not eliminates, the cavity effect typically associated with conventional shielding assemblies. In other words, by providing each fin of the first waveform fin configuration 300 and the second waveform fin configuration 400 having the dimensions described herein, the shield (anode) is essentially hidden from the deposition line of sight from the target.

[0039] Returning to Figure 1, the chamber cover 101 rests on the flange 140 of the upper grounded housing wall 116. Similar to the lower grounded housing wall 110, the upper grounded housing wall 116 provides part of the RF return path between the upper grounded housing wall 116 and the grounding assembly 103 of the chamber cover 101. However, other RF return paths are also possible, such as through the grounding shield 138.

[0040] As described above, the shield 138 extends downward and may include one or more sidewalls configured to surround the first volume 120. The shield 138 extends downward along the walls of the upper ground housing wall 116 and the lower ground housing wall 110 to below but spaced apart from the top surface of the substrate support 106, and returns upward until it reaches the top surface of the substrate support 106 (e.g., forming a U-shaped portion at the bottom of the shield 138).

[0041] When the substrate support 106 is in its lower loading position (not shown), the first ring 148 (e.g., a cover ring) rests on the top of the U-shaped portion (e.g., the first position of the first ring 148), but when the substrate support 106 is in its upper deposition position (as shown in FIG1), it rests on the outer periphery of the substrate support 106 (e.g., the second position of the first ring 148) to protect the substrate support 106 from sputter deposition.

[0042] An additional dielectric ring 111 may be used to shield the periphery of the substrate 108 from deposition. For example, the additional dielectric ring 111 may be disposed around the peripheral edge of the substrate support 106 and adjacent to the substrate processing surface 109, as shown in FIG1.

[0043] The first ring 148 may include a protrusion extending from the lower surface of the first ring 148 on either side of the U-shaped portion extending upwardly inside the bottom of the shield 138. The innermost protrusion may be configured to interface with the substrate support 106 to align the first ring 148 relative to the shield 138 when the substrate support moves to the processing position and the first ring 148 moves to the second position. For example, when the first ring 148 is in the second position, the surface of the innermost protrusion facing the substrate support may be tapered, notched, etc., to rest in / on a corresponding surface on the substrate support 106.

[0044] In some embodiments, magnet 152 may be disposed around chamber body 104 to selectively provide a magnetic field between substrate support 106 and target 114. For example, as shown in FIG1, when in the processing position, magnet 152 may be disposed in the region directly above substrate support 106 surrounding the outer side of housing wall 110. In some embodiments, magnet 152 may additionally or alternatively be disposed in other locations, such as adjacent to upper grounded housing wall 116. Magnet 152 may be an electromagnet and may be coupled to a power source (not shown) to control the magnitude of the magnetic field generated by the electromagnet.

[0045] The chamber cover 101 typically includes a grounding assembly 103 disposed around the target assembly 102. The grounding assembly 103 may include a ground plane 156 having a first surface 157, which may generally be parallel to and relative to the back surface of the target assembly 102. A grounding shield 112 may extend from the first surface 157 of the ground plane 156 and surround the target assembly 102. The grounding assembly 103 may include a support member 175 to support the target assembly 102 within the grounding assembly 103.

[0046] In some embodiments, the support member 175 may be coupled to the lower end of the grounding shield 112 near its peripheral edge and extend radially inward to support the sealing ring 181, the target assembly 102, and (optionally) the dark space shield (e.g., which may be disposed between the shield 138 and the target assembly 102, not shown). The sealing ring 181 may be a ring or other annular shape having a desired cross-section to facilitate engagement with the target assembly 102 and the support member 175. The sealing ring 181 may be made of a dielectric material, such as ceramic. The sealing ring 181 may insulate the target assembly 102 from the grounding assembly 103.

[0047] The support member 175 may be a generally planar member having a central opening to receive the shield 138 and the target 114. In some embodiments, the support member 175 may be circular or disc-shaped, although the shape may vary depending on the corresponding shape of the chamber cover and / or the shape of the substrate to be processed in the processing chamber 100. In use, when the chamber cover 101 is opened or closed, the support member 175 maintains the proper alignment of the shield 138 with respect to the target 114, thereby minimizing the risk of misalignment due to the chamber assembly or opening and closing of the chamber cover 101.

[0048] Target assembly 102 may include a source distribution plate 158, which is opposite to the back side of target 114 and electrically coupled to target 114 along the peripheral edge of target 114. Target 114 may include source material 113, which (metal, metal oxide, metal alloy, magnetic material, etc.) will be deposited on a substrate (such as substrate 108) during sputtering. In some embodiments, target 114 may include a backplate 162 to support source material 113. Backplate 162 may include a conductive material, such as copper-zinc, copper-chromium, or the same material as the target, such that RF and optional DC power can be coupled to source material 113 through backplate 162. Alternatively, backplate 162 may be non-conductive and may include conductive elements (not shown), such as electrical feedthroughs, etc.

[0049] A conductive member 164 may be disposed between the back surface of the source distribution plate and the target 114 to propagate RF energy from the source distribution plate to the peripheral edge of the target 114. The conductive member 164 may be cylindrical or tubular, wherein a first end 166 is coupled to the target-facing surface of the source distribution plate 158 near the peripheral edge of the source distribution plate 158, and a second end 168 is coupled to the source distribution plate-facing surface of the target 114 near the peripheral edge of the target 114. In some embodiments, the second end 168 is coupled to the source distribution plate-facing surface of the back plate 162 near the peripheral edge of the back plate 162.

[0050] The target assembly 102 may include a cavity 170 disposed between the back surface of the target 114 and the source distribution plate 158. The cavity 170 may at least partially accommodate the magnetron assembly 196. The cavity 170 is at least partially defined by the inner surface of the conductive member 164, the target-facing surface of the source distribution plate 158, and the source-facing surface (e.g., the back surface) of the target 114 (or back plate 162). In some embodiments, the cavity 170 may be at least partially filled with a cooling fluid, such as water (H2O). In some embodiments, a separator (not shown) may be provided to contain the cooling fluid in a desired portion (e.g., the lower portion, as shown) of the cavity 170 and to prevent the coolant from reaching the assembly disposed on the other side of the separator.

[0051] An insulating gap 180 is provided between the ground plane 156 and the outer surfaces of the source distribution plate 158, the conductive member 164, and the target 114 (and / or the backplate 162). The insulating gap 180 may be filled with air or some other suitable dielectric material, such as ceramic, plastic, etc. The distance between the ground plane 156 and the source distribution plate 158 depends on the dielectric material between the ground plane 156 and the source distribution plate 158. When the dielectric material is mainly air, the distance between the ground plane 156 and the source distribution plate 158 should be between about 5 and about 40 mm.

[0052] The grounding assembly 103 and the target assembly 102 can be electrically separated, i.e., through the sealing ring 181 and through one or more insulators 160 disposed between the first surface 157 of the grounding plate 156 and the back side of the target assembly 102 (e.g., the non-target-facing side of the source distribution plate 158).

[0053] Target assembly 102 has an RF power supply 182 connected to electrode 154 (e.g., an RF feed structure). RF power supply 182 may include an RF generator and matching circuitry, for example, to minimize reflected RF energy back to the RF generator during operation. For example, the frequency range of the RF energy provided by RF power supply 182 can be from about 13.56 MHz to about 162 MHz or higher. For example, non-limiting frequencies such as 13.56 MHz, 27.12 MHz, 60 MHz, or 162 MHz can be used.

[0054] In some embodiments, a second energy source 183 may be coupled to the target assembly 102 to provide additional energy to the target 114 during processing. In some embodiments, the second energy source 183 may be a DC power supply to provide DC energy, for example, to increase the sputtering rate of the target material (and thus the deposition rate on the substrate). In some embodiments, the second energy source 183 may be a second RF power supply similar to RF power supply 182 to provide RF energy, for example, at a second frequency different from the first frequency of the RF energy provided by RF power supply 182. In embodiments where the second energy source 183 is a DC power supply, the second energy source may be coupled to the target assembly 102 at any location suitable for electrically coupling DC energy to the target 114, such as electrode 154 or some other conductive component (e.g., source distribution plate 158). In embodiments where the second energy source 183 is a second RF power supply, the second energy source may be coupled to the target assembly 102 through electrode 154.

[0055] Electrode 154 may be cylindrical or other rod-shaped and may be aligned with the central axis 186 of the processing chamber 100 (e.g., electrode 154 may be coupled to the target assembly at a point coinciding with the central axis 186 of the target assembly). Alignment of electrode 154 with the central axis 186 of the processing chamber 100 facilitates the application of RF energy from RF power supply 182 to target 114 in an asymmetric manner (e.g., electrode 154 may couple RF energy to the target at a "single point" aligned with the central axis of the PVD chamber). The central location of electrode 154 helps to eliminate or reduce deposition asymmetry in the substrate deposition process. Electrode 154 may have any suitable diameter; however, the smaller the diameter of electrode 154, the closer the RF energy application is to a true single point. For example, while other diameters may be used, in some embodiments, the diameter of electrode 154 may be from about 0.5 to about 2 inches. Depending on the configuration of the PVD chamber, electrode 154 may typically have any suitable length. In some embodiments, the electrode may have a length between about 0.5 and about 12 inches. The electrode 154 may be made of any suitable conductive material, such as aluminum, copper, silver, etc.

[0056] Electrode 154 may pass through an opening in ground plane 156 and couple to source distribution plate 158. Ground plane 156 may comprise any suitable conductive material, such as aluminum, copper, etc. The open space between one or more insulators 160 allows RF waves to propagate along the surface of source distribution plate 158. In some embodiments, one or more insulators 160 may be symmetrically positioned relative to the central axis 186 of processing chamber 100. Such positioning can facilitate symmetrical RF wave propagation along the surface of source distribution plate 158 and ultimately to the target 114 coupled to source distribution plate 158. At least in part due to the central position of electrode 154, RF energy can be delivered in a more symmetrical and uniform manner compared to conventional PVD chambers.

[0057] One or more portions of the magnetron assembly 196 may be at least partially disposed within the cavity 170. The magnetron assembly provides a rotating magnetic field close to the target to aid in plasma processing within the chamber 104. In some embodiments, the magnetron assembly 196 may include a motor 176, a motor shaft 174, a gearbox 178, a gearbox shaft 184, and rotatable magnets (e.g., a plurality of magnets 188 connected to a magnet support member 172).

[0058] The magnetron assembly 196 rotates within the cavity 170. For example, in some embodiments, a motor 176, a motor shaft 174, a gearbox 178, and a gearbox shaft 184 may be provided to rotate the magnet support member 172. In some embodiments (not shown), the magnetron drive shaft may be arranged along the central axis of the cavity, where RF energy is coupled to the target assembly at different locations or in different ways. As shown in FIG1, in some embodiments, the motor shaft 174 of the magnetron may be arranged through an eccentric opening in the ground plane 156. The end of the motor shaft 174 projecting from the ground plane 156 is connected to the motor 176. The motor shaft 174 is further configured to pass through a corresponding eccentric opening (e.g., a first opening 146) in the source distribution plate 158 and be coupled to the gearbox 178. In some embodiments, one or more second openings 198 may be arranged through the source distribution plate 158 in a symmetrical relationship with the first opening 146 to advantageously maintain an axisymmetric RF distribution along the source distribution plate 158. One or more second openings 198 may also be used to allow items such as sensors to enter cavity 170.

[0059] The gearbox 178 can be supported by any suitable means, such as by connection to the bottom surface of the source distribution plate 158. The gearbox 178 can be insulated from the source distribution plate 158 by making the upper surface of the gearbox 178 at least of a dielectric material or by inserting an insulating layer 190 between the gearbox 178 and the source distribution plate 158. The gearbox 178 is further coupled to the magnet support member 172 via the gearbox shaft 184 to transmit the rotational motion provided by the motor 176 to the magnet support member 172 (and thus to the plurality of magnets 188). The gearbox shaft 184 can advantageously coincide with the central axis 186 of the processing chamber 100.

[0060] The magnet support member 172 may be made of any material suitable for providing sufficient mechanical strength to rigidly support the plurality of magnets 188. The plurality of magnets 188 may be configured in any manner to provide a magnetic field with the desired shape and strength, thereby providing more uniform overall corrosion of the target, as described herein.

[0061] Alternatively, the magnet support member 172 may be rotated in any other manner with sufficient torque to overcome the resistance caused on the magnet support member 172 and the attached plurality of magnets 188, for example due to cooling fluid (if present) in the cavity 170.

[0062] Although the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be designed without departing from its basic scope. [Simplified Explanation of the Diagram]

[0007] The embodiments of this disclosure, which have been briefly summarized above and discussed in more detail below, can be understood by referring to the illustrative embodiments depicted in the accompanying drawings. However, the drawings illustrate only typical embodiments of this disclosure and should therefore not be considered as limiting the scope, as this disclosure may acknowledge other equally effective embodiments.

[0008] FIG1 is a schematic cross-sectional view of a processing chamber according to some embodiments of the present disclosure.

[0009] FIG2 is a cross-sectional view of a shield according to some embodiments of the present disclosure.

[0010] FIG3 is an enlarged view of a designated detail area of ​​FIG2 according to some embodiments of the present disclosure.

[0011] FIG4 is an enlarged view of a designated detail area of ​​FIG2 according to some embodiments of the present disclosure.

[0012] For ease of understanding, the same element symbols are used where possible to represent common elements in the figures. These figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. [Biomaterial Storage]

[0064] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A shielding for a physical vapor deposition chamber, comprising: An inner wall includes a bottom having a plurality of wavy fins arranged in a generally sinusoidal configuration, wherein an annular groove extends along each of the plurality of wavy fins, or at least one of the plurality of wavy fins has a generally V-shaped end.

2. The shield as claimed in claim 1 further includes a flange disposed adjacent to an upper portion of the inner wall and having an inner diameter of about 14.5 inches to about 14.75 inches and an outer diameter of about 16 inches to about 16.5 inches.

3. The shielding according to claim 2, wherein the distance from a bottom surface of the bottom to a top surface of the flange is about 3 inches to about 3.5 inches.

4. The shielding according to claim 1, wherein the thickness of each of the plurality of wave-shaped fins is approximately 0.08 inches.

5. The shielding as described in request item 1, wherein, The gap between each of the plurality of wavy fins is approximately 0.175 inches.

6. The shield as described in claim 1, wherein the annular groove is either curved or straight.

7. The shielding according to claim 6, wherein the annular groove is either rhomboid or triangular.

8. The shielding as described in request item 1, wherein, The plurality of wave-shaped fins are vertically aligned along the bottom.

9. The shielding as described in request item 1, wherein, The inner wall includes an upper portion having a first wave-shaped fin configuration, and the plurality of wave-shaped fins in the bottom portion having a second wave-shaped fin configuration that differs from the first wave-shaped fin configuration.

10. A substrate processing apparatus, comprising: A chamber body, in which a substrate support is disposed; a target, the target being coupled to the chamber body opposite to the substrate support; An RF power source that forms a plasma within the chamber body; and a shield comprising an inner wall having a bottom having a plurality of wave-shaped fins in a generally sinusoidal configuration, wherein an annular groove extends along each of the plurality of wave-shaped fins, or at least one of the plurality of wave-shaped fins has a generally V-shaped end.

11. The substrate processing apparatus according to claim 10 further includes a flange disposed adjacent to an upper portion of the inner wall and having an inner diameter of about 14.5 inches to about 14.75 inches and an outer diameter of about 16 inches to about 16.5 inches.

12. The substrate processing apparatus according to claim 11, wherein a distance from a bottom surface of the bottom to a top surface of the flange is about 3 inches to about 3.5 inches.

13. The substrate processing apparatus according to claim 10, wherein the thickness of each of the plurality of wave-shaped fins is approximately 0.08 inches.

14. The substrate processing apparatus according to claim 10, wherein a gap between each of the plurality of wave-shaped fins is approximately 0.175 inches.

15. The substrate processing apparatus according to claim 10, wherein the plurality of wave-shaped fins are vertically aligned along the bottom.

16. The substrate processing apparatus according to claim 10, wherein the inner wall includes an upper portion having a first wave-shaped fin configuration, and the plurality of wave-shaped fins in the bottom portion have a second wave-shaped fin configuration different from the first wave-shaped fin configuration.

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