Apparatus and methods for processing chamber lid concentricity alignment

Abstract

A method for aligning a processing chamber using a centering ring and a processing chamber having a centering ring are described. The method includes determining the average center position of the centering ring based on the concentricity of the centering ring and the support surface, and adjusting the average position of the centering ring to a final position based on the average center position.

Description

Equipment and methods for ensuring concentric alignment of chamber lids The embodiments disclosed herein relate to the calibration and alignment of components in a processing chamber. Specifically, the embodiments disclosed herein relate to apparatus and methods for calibrating, aligning, and centering one or more spray heads relative to a wafer pedestal at different Z positions. In some chamber designs used for atomic layer deposition (ALD) or chemical vapor deposition (CVD) processes, precursors and gases are simultaneously delivered through multiple gas distribution plates (or spray heads) to a large substrate support or multiple substrate support surfaces. The gas distribution plates are spaced apart from the wafer pedestal, or vice versa, thus forming one or more operating gaps. During deposition, material sprayed downwards from the spray head can contaminate the process kit and deposit on it by flowing through the gap between the pedestal support and the chamber wall. In some cases, such as processes using metal oxides, the deposit on the process kit cannot be practically cleaned, and the process kit must be periodically discarded and replaced, increasing operating costs and machine downtime. Proper alignment of the spray head and pedestal support can help reduce this overspraying. In chamber designs with more than one processing station (and therefore more than one spray head and pedestal support that can rotate between each other), each of the spray head and pedestal support must also be calibrated. Therefore, there is a need in the art for equipment and methods for calibrating and aligning one or more processing stations to reduce overspraying of material and unwanted deposition on processing kits. One or more embodiments disclosed herein relate to a processing chamber and a method for aligning the processing chamber. In some embodiments, the method includes: positioning a centering ring adjacent to an opening in a processing chamber cover such that the centering ring is loosely fixed in place; positioning a vision system on the centering ring; determining the concentricity of the centering ring relative to a first support surface of a substrate support; rotating the substrate support to position a second support surface of the substrate support adjacent to the opening in the processing chamber cover; determining the concentricity of the centering ring relative to the second support surface; determining an average center position of the centering ring based on the concentricity of the centering ring; and adjusting the position of the centering ring to a final position based on the average center position. In some embodiments, the processing chamber cover has an outer surface and an inner surface. In some embodiments, the centering ring is positioned to contact the outer surface and has an inner diameter and an outer diameter. In some embodiments, the opening in the processing chamber cover has an opening diameter. In some embodiments, using a vision system, the substrate support is positioned adjacent to and spaced apart from the inner surface of the processing chamber cover. In some embodiments, the average center position of the centering ring is based on the concentricity of the centering ring with the first support surface and the second support surface. In some embodiments, the method further includes: rotating a substrate support to position a third support surface of the substrate support adjacent to an opening in the processing chamber cover; determining the concentricity of a centering ring relative to the third support surface; rotating the substrate support to position a fourth support surface of the substrate support adjacent to an opening in the processing chamber cover; and determining the concentricity of the centering ring relative to the fourth support surface. In some embodiments, the average center position of the centering ring is based on the concentricity of the centering ring with the first support surface, the second support surface, the third support surface, and the fourth support surface. In some embodiments, the processing chamber includes: an internal volume defined by a processing chamber cover having an opening and a housing having walls and a bottom; a plurality of processing stations including a substrate support, wherein the support surface is located within the internal volume; a gas distribution assembly configured to deliver gas through the opening onto the support surface; and a centering ring positioned at an average center location relative to the support surface and adjacent to the opening. In some embodiments, the centering ring has an inner diameter less than or equal to the outer diameter of the opening in the processing chamber cover, and the gas distribution assembly and the centering ring form a seal with the processing chamber cover over the opening. Before describing several exemplary embodiments of this disclosure, it will be understood that this disclosure is not limited to the details of the construction or process steps set forth in the following description. This disclosure can have other embodiments and can be practiced or carried out in various ways. As used in this specification and the accompanying claims, the terms "substrate" and "wafer" are used interchangeably, both referring to the surface on which the process is performed, or a portion thereof. Those skilled in the art will also understand that, unless the context clearly indicates otherwise, reference to a substrate may also refer to only a portion of a substrate. Furthermore, reference to deposition on a substrate may mean a bare substrate and a substrate on which one or more films or features are deposited or formed. As used herein, "substrate" refers to any substrate on which a film treatment is performed during a manufacturing process, or a material surface formed on a substrate. For example, depending on the application, substrate surfaces on which treatments can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor substrates. Substrates may be exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, and / or bake substrate surfaces. In addition to treatments performed directly on the surface of the substrate itself, any film treatment steps disclosed herein, as further detailed below, may also be performed on an underlying layer formed on the substrate, and the term "substrate surface" is intended to include such an underlying layer as indicated by the context. Therefore, for example, in the case where a film / layer or part of a film / layer has already been deposited on the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface. As used in this specification and the accompanying claims, the terms "precursor," "reactant," "reacting gas," and the like are used interchangeably to refer to any gaseous species that can react with the surface of a substrate or with a film formed on the surface of a substrate. As used herein, "atomic layer deposition" or "cyclic deposition" refers to the sequential exposure of two or more reactive compounds to deposit a material layer on a substrate surface. The substrate, or portions thereof, is sequentially or individually exposed to two or more reactive compounds introduced into the reaction zone of a processing chamber. In time-domain ALD processes, exposure to each reactive compound is separated by a time delay to allow each compound to adhere to and / or react on the substrate surface and subsequently be decontaminated from the processing chamber. This sequential exposure of the reactive compounds to the substrate is considered valid. In the space ALD process, different portions of the substrate surface, or materials on the substrate surface, are simultaneously exposed to two or more reactive compounds, such that at any given point on the substrate, there is substantially no simultaneous exposure to more than one reactive compound. As used in this specification and the accompanying claims, and as will be understood by those skilled in the art, the term "substantially" as used in this context means the possibility that a small portion of the substrate may be simultaneously exposed to multiple reactive gases attributable to diffusion, and that simultaneous exposure is not intended. In one phase of a time-domain ALD process, a first reactive gas (i.e., a first precursor or compound A) is pulsed into the reaction zone, followed by a first time delay. Next, a second reactive gas (i.e., a second precursor or compound B) is pulsed into the reaction zone, followed by a second delay. During each time delay, a purge gas (such as argon) can be introduced into the processing chamber to purge the reaction zone or otherwise remove any residual reactive compounds or reaction byproducts from the reaction zone. Alternatively, the purge gas can flow continuously throughout the deposition process, such that only the purge gas flows during the time delay between pulses of the reactive compounds. The reactive compounds are pulsed alternately until a desired film or film thickness is formed on the substrate surface. In either case, the ALD process of pulsed compound A, purge gas, compound B, and purge gas is a cycle. The cycle can begin with compound A or compound B and continue in the corresponding sequence until a film with a predetermined thickness is obtained. As used herein, “pulse” or “dose” is intended to refer to the amount of source gas introduced into the treatment chamber intermittently or discontinuously. Depending on the duration of the pulse, the amount of a particular compound in each pulse may vary over time. A particular treatment gas may include a single compound or a mixture / combination of two or more compounds (e.g., the treatment gases described below). This disclosure provides embodiments of a processing chamber. In one or more embodiments, the processing chamber includes a chamber body having sidewalls and a bottom defining a processing volume. In one or more embodiments, the processing chamber includes a substrate support having a rotation axis within the processing volume. In one or more embodiments, the substrate support includes a plurality of movable heaters positioned at a distance from the rotation axis and arranged symmetrically around the rotation axis. This disclosure provides a method for use with a single wafer or multiple wafers (also known as a batch) processing chamber. Figures 1 and 2 illustrate a processing chamber 100 according to one or more embodiments of this disclosure. Figure 1 illustrates a processing chamber 100 shown as a cross-sectional isometric view according to one or more embodiments of this disclosure. Figure 2 illustrates a cross-sectional view of a processing chamber 100 according to one or more embodiments of this disclosure. Thus, some embodiments of this disclosure relate to a processing chamber 100 that integrates a substrate support assembly 200. The term "assembly" refers to a combination of parts or portions. The processing chamber 100 has a housing 102, which has walls 104 and a bottom 106. The housing 102, together with the processing chamber cover 300, defines a processing volume 109, also referred to as the internal volume. The illustrated processing chamber 100 includes a plurality of processing stations 110. The processing stations 110 are located within the internal volume 109 of the housing 102 and are positioned in a circular arrangement around the rotation axis 211 of the substrate support assembly 200. Each processing station 110 includes a gas distribution plate 112 having a front surface 114. In some embodiments, the front surfaces 114 of each of the gas distribution plates 112 are substantially coplanar. A processing station 110 is defined as an area in which processing can occur. For example, in some embodiments, a processing station 110 is defined as an area defined by the support surface 231 of the substrate support 225 (described below) and the front surface 114 of the gas distribution plate 112. In some embodiments, the gas distribution plate 112 includes one or more of a spacer, a gas funnel, a gas injector, or a spray head. In some embodiments, the processing chamber 100 includes more than one support surface 231. In some embodiments, the processing chamber 100 includes a plurality of support surfaces 231. In the illustrated embodiment, heater 230 serves as a support surface 231 and forms part of substrate support 225. The substrate support assembly 200 includes support arms 220. In some embodiments, the processing chamber includes one, two, three, four, five, six, seven, or eight support arms 220. In some embodiments, the processing chamber 100 includes more than eight support arms 220. In some embodiments, the number of support arms 220 is equal to the number of processing stations 110. The substrate support assembly 200 includes support shafts 234. In some embodiments, the support shafts 234 are located at the outer ends of each of the support arms 220. The center of the support surface 231 is located at a distance from the rotation axis 211 such that after the central base 210 rotates, the support surface 231 moves off the rotation axis in a circular path. In some embodiments, the processing chamber contains one, two, three, four, five, six, seven, or eight support shafts 234. In some embodiments, the processing chamber 100 contains more than eight support shafts 234. In some embodiments, the number of support shafts 234 is equal to the number of processing stations 110. The processing chamber 100 described herein has a plurality of processing stations 110. In some embodiments, the processing chamber has two, three, four, five, six, seven, or eight processing stations 110. In some embodiments, each of the plurality of processing stations 110 is a spatially separated processing environment. In some embodiments, the processing chamber 100 has more than eight processing stations 110. The processing environment may be fitted with a sealing surface coplanar with and parallel to the substrate. The processing environment can be arranged in a circular configuration. In some embodiments, there are two, three, four, five, six, seven, or eight substrate supports 225. In some embodiments, each of the plurality of substrate supports 225 has a spatially separated processing environment. In some embodiments, the processing chamber 100 has more than eight substrate supports 225. A rotatable structure on which one to four (or more) independent substrate supports 225 are mounted moves the substrates in a circular path having a diameter sufficient to align the substrate supports 225 with the processing environment. In some embodiments, each of the substrate supports 225 is operatively connected to a heater 230. Each heater 230 may be temperature-controlled and may have one or more concentric temperature control zones. Processing station 110 can be configured to perform any suitable process and provide any suitable processing conditions. The type of gas distribution plate 112 used will depend, for example, on the type of process being performed and the type of nozzle or gas injector. For example, processing station 110 configured to operate as an atomic layer deposition (ALD) apparatus may have a spray nozzle or vortex gas injector, while processing station 110 configured to operate as a plasma station may have one or more electrode and / or ground plane configurations to generate plasma while allowing plasma gas to flow toward the wafer. The embodiment shown in Figure 2 has a different type of processing station 110 on the upper left side of the figure (processing station 110a) than on the upper right side of the figure (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCPs, ICPs, parallel plate CCPs, UV exposure, laser processing, pumping chambers, annealing stations, and metering stations. Figure 3 shows an enlarged view of a gas distribution assembly 105 for a processing station 110 or processing chamber according to one or more embodiments of this disclosure. Those skilled in the art will recognize that the embodiments shown in Figure 3 are general schematic diagrams and details (e.g., gas passages) are omitted. The illustrated gas distribution assembly 105 comprises three main components: a gas distribution plate 112, a cover 180, and an optional spacer 330. The spacer 330 is also referred to as a pump / purification spacer, insert, or pump / purification insert. In some embodiments, the spacer 330 is connected to or in fluid communication with a vacuum (exhaust). In some embodiments, the spacer 330 is connected to or in fluid communication with a purge gas source. The plurality of station openings 310 in the processing chamber cover 300 may be of uniform size or of different sizes. The processing chamber cover 300 has an outer surface 325 and an inner surface 326. The inner surface 326 faces the openings 310. The openings 310 have an opening diameter that allows the gas distribution assembly 105 to operatively deliver gas to a substrate positioned on the support surface 231. Gas injectors of different sizes / shapes may be used with a pump / purification spacer 330, which is suitably shaped to transition from the plurality of station openings 310 to the gas distribution plate 112. For example, as shown, the pump / purification spacer 330 includes a top 331 and a bottom 333, as well as sidewalls 335. When inserted into the plurality of openings 310 in the processing chamber cover 300, a protrusion 334 is configured to be positioned in the plurality of openings 310. In some embodiments, the gas distribution assembly 105 is configured to deliver gas through the openings 310 onto the support surface 231. The pump / purification compartment 330 includes an opening 339 into which a gas distribution plate 112 can be inserted. The illustrated gas distribution plate 112 has a flange 342 that can contact a protrusion formed by a back surface 332 adjacent to the top 331 of the pump / purification compartment 330. The diameter or width of the gas distribution plate 112 can be any suitable size so that it can be fitted into the opening 339 of the pump / purification compartment 330. This allows for the use of various types of gas distribution plates 112 within the same opening 310 in the processing chamber cover 300. Figure 4 illustrates a processing platform 400 according to one or more embodiments of the present disclosure. The embodiments shown in Figure 4 represent only one possible configuration and should not be considered as limiting the scope of the present disclosure. For example, in some embodiments, the processing platform 400 has a different number of one or more processing chambers 100, buffer stations 420, and / or robots 430 configurations compared to the illustrated embodiments. An exemplary processing platform 400 includes a central transfer station 410 having a plurality of sides 411, 412, 413, and 414. The illustrated transfer station 410 has a first side 411, a second side 412, a third side 413, and a fourth side 414. Although four sides are illustrated, those skilled in the art will understand that, for example, depending on the overall configuration of the processing platform 400, the transfer station 410 may have any suitable number of sides. In some embodiments, the transfer station 410 has three, four, five, six, seven, or eight sides. The transfer station 410 has a robot 430 positioned therein. The robot 430 can be any suitable robot capable of moving the wafer during processing. In some embodiments, the robot 430 has a first arm 431 and a second arm 432. The first arm 431 and the second arm 432 can move independently of the other arms. The first arm 431 and the second arm 432 can move in the xy plane and / or along the z-axis. In some embodiments, the robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each arm can move independently of the other arms. The illustrated embodiment includes six processing chambers 100, two of which are connected to each of the second side 412, third side 413, and fourth side 414 of the central transfer station 410. Each of the processing chambers 100 can be configured to perform different processes. The processing platform 400 may also include one or more buffer stations 420 connected to a first side 411 of the central transfer station 410. Buffer stations 420 may perform the same or different functions. For example, a buffer station may hold wafer cassettes that have been processed and returned to their initial cassettes, or one of the buffer stations may hold unprocessed wafers that have been moved to other buffer stations after processing. In some embodiments, one or more buffer stations are configured to preprocess, preheat, or clean wafers before and / or after processing. The processing platform 400 may also include one or more slit valves 418 between the central transfer station 410 and any processing chamber 100. The slit valves 418 can be opened or closed to isolate the internal volume within the processing chamber 100 from the environment within the central transfer station 410. For example, if a processing chamber will generate plasma during processing, closing the slit valve of that processing chamber to prevent stray plasma from damaging the robot in the transfer station may be helpful. Processing platform 400 can be connected to fab interface 450 to allow wafers or wafer cassettes to be loaded into processing platform 400. Robot 455 within fab interface 450 can be used to move wafers or cassettes in and out of buffer stations. Wafers or cassettes can be moved within processing platform 400 by means of robot 430 in central transfer station 410. In some embodiments, fab interface 450 serves as a transfer station for another cluster tool (i.e., another multi-chamber processing platform). A controller 495 may be provided and coupled to various components of the processing platform 400 to control their operation. The controller 495 may be a single controller controlling the entire processing platform 400, or multiple controllers controlling separate parts of the processing platform 400. For example, in some embodiments, the processing platform 400 includes separate controllers for one or more of the processing chamber 100, central transfer station 410, plant interface 450, and / or robot 430. In some embodiments, the processing chamber 100 further includes a controller 495 connected to a plurality of substantially coplanar support surfaces 231, the controller being configured to control one or more of a first temperature or a second temperature. In one or more embodiments, the controller 495 controls the speed of movement of the substrate support assembly 200 (Figure 2). In some embodiments, the controller 495 includes a central processing unit (CPU) 496, memory 497, and support circuitry 498. The controller 495 may control the processing platform 400 directly or via a computer (or controller) associated with a particular processing chamber and / or support system components. The controller 495 can be one of any type of general-purpose computer processor used in an industrial setup to control various chambers and subprocessors. The memory 497 of the controller 495, or computer-readable media, can be one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compressed optical discs or digital video discs), flash drives, or any other form of digital storage (local or remote). The memory 497 can store an instruction set that can be operated by the processor (CPU 496) to control the parameters and components of the processing platform 400. Support circuitry 498 is coupled to CPU 496 to support the processor in a conventional manner. This circuitry includes cache memory, a power supply, clock circuitry, input / output circuitry systems and subsystems, and the like. One or more processes can be stored in memory 498 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of processing platform 400 or a separate processing chamber in the manner described herein. Software routines can also be stored and / or executed by a second CPU (not shown) located at a hardware remote location controlled by CPU 496. Some or all of the processes and methods disclosed herein can also be executed in hardware. Therefore, a process can be implemented in software and executed in hardware using a computer system, as, for example, an application-specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. When executed by a processor, the software typically converts a general-purpose computer into a dedicated computer (controller) that controls the chamber operation, enabling the process to be executed. In some embodiments, the controller 495 has one or more configurations for performing independent processes or subprocesses to execute the method. The controller 495 may be connected to intermediate components and configured to operate the intermediate components to perform the function of the method. For example, the controller 495 may be connected to one or more gas valves, actuators, motors, slit valves, vacuum controls, or other components and configured to control one or more of these components. The duration of each pulse / dose is variable and can be adjusted to suit, for example, the volumetric capacity of the processing chamber and the capacity of the vacuum system coupled to that chamber. Furthermore, the dosing time of the processing gas can be varied based on the flow rate of the processing gas, the temperature of the processing gas, the type of control valve, the type of processing chamber used, and the ability of the components of the processing gas to adsorb onto the substrate surface. The dosing time can also be varied based on the type of layer formed and the geometry of the formed element. The dosing time should be long enough to provide sufficient volume of compounds adsorbed / chemisorbed onto substantially the entire surface of the substrate and forming a layer of processing gas components thereon. Some embodiments disclosed herein relate to film deposition processes using a batch processing chamber, also known as a spatial processing chamber. In one or more embodiments, the batch processing chamber may be any batch processing chamber known to those skilled in the art. During deposition, misalignment between the gas distribution assembly 105 and the processing chamber cover 300 can contaminate and deposit around the support surface 231 and onto the processing sleeve. In some cases, the processing sleeve can be cleaned during chamber maintenance. However, certain precursors (such as metal oxides) are not feasible or practically impossible to clean. Therefore, proper alignment of the gas distribution assembly 105 and the processing chamber cover 300 advantageously reduces downtime and chamber operating costs. Consequently, one or more embodiments of this disclosure relate to apparatus, methods, and systems for aligning the gas distribution assembly 105 and the processing chamber cover 300. Figure 5 illustrates a method 500 for aligning a gas dispensing assembly 105 and a processing chamber cover 300 according to one or more embodiments of this disclosure. In one or more embodiments, method 500 uses a centering ring for aligning the gas dispensing assembly 105 and the processing chamber cover 300. In operation 510, the centering ring is positioned adjacent to the opening 310 of the processing chamber cover 300. The centering ring may be loosely secured. In some embodiments, the centering ring has sufficient tolerance clearance to allow adjustment of the centering ring relative to the support surface 231. Figure 6 illustrates a centering ring 650 between a processing chamber cover 300 and a gas distribution plate 112, wherein the gas distribution plate 112 includes a gas funnel 360, a spacer 330, and a spray head 280. In some embodiments, the spacer 330 is optional. As shown, the spray head 280 is positioned below and in contact with the spacer 250. The spray head 280 includes a plurality of holes 288 extending through the spray head 280 toward an outer edge 286 of the spray head 280. The spray head 280 further includes at least one discharge port 294 positioned between the plurality of holes 288 and the outer edge 286. The plurality of holes 288 are configured to guide gas on a support surface 231. The discharge port 294 is configured to extract excess gas from the deposition process. As shown in Figure 6, the region from the outermost plurality of orifices 288 to at least one discharge port 294 is defined as the fully deposited region FD 610, where the precursor remains fully flowing and is discharged from the plurality of orifices 288. The region between the widths of the at least one discharge port 294 is defined as the transition region TD 620, where deposition begins to detach due to discharge from the at least one discharge port 294. The region from the at least one discharge port 294 to the outer peripheral edge 286 is defined as the non-deposited region ND 630, where no precursor material is present. These regions are generally aligned with the precursor dilution region, and in some embodiments, the sharp film deposition transition is aligned with the outer diameter of the at least one discharge port 294. Due to tolerance stacking, the concentricity of the gas distribution plate 112 relative to the support surface 231 can be ± 1.5 mm (RMS) in some embodiments. Concentricity and misalignment can cause one or more of the regions FD 610, TD 620, and ND 630 to shift and cause over-spraying of deposition into adjacent regions. In some embodiments, the outer peripheral edge 286 of the spray head 280 has a lip 290 configured to house the spray head 280 within a protrusion 170 of the chamber cover 300. A tolerance gap is provided between the spray head 280 and the chamber cover 300 at the protrusion 170 and the cover 290. This tolerance gap allows for positioning and adjustment of the centering ring 650. In some embodiments, the gas distribution assembly 105 and the centering ring 650 form a seal with the processing chamber cover 300 on the opening 310, thereby forming a processing station 110 of the processing chamber 100. One or more embodiments further relate to a system and method for calibrating multiple processing stations 110 by using only a vision system 700. In the embodiments described herein, a particular chamber architecture is described for reference; however, it will be understood that the vision system 700 and the calibration method and system can be used in any chamber or chamber architecture, wherein the gas distribution assembly 105 can be dropped into the chamber cover 300 or otherwise removably or non-removably attached to the chamber cover. Figures 7A through 7C illustrate a schematic representation of method 500. Figure 7A shows a cross-sectional view of two processing stations 110, a processing chamber cover 300 with an opening 310, a substrate support 225 with a support surface 231, and a centering ring 650. In some embodiments, the centering ring 650 further includes one or more lugs extending outward from an annular body. In some embodiments, each of the one or more lugs has a hole for receiving a bolt to secure the centering ring 650 against the chamber cover 300. As shown, the centering ring 650 is positioned adjacent to the opening 310 and adjacent to the outer surface 325. The centering ring 650 has an inner diameter 730 and an outer diameter 740. The centering ring 650 has an opening 750 equal in size to the inner diameter 730. In some embodiments, the inner diameter 730 of the centering ring 650 is less than or equal to the diameter of the opening 310. In some embodiments, the inner diameter 730 of the centering ring 650 is less than or equal to the diameter of the opening 310 in the range of 50 mm to 0 mm, 40 mm to 0 mm, 30 mm to 0 mm, 20 mm to 0 mm, 10 mm to 0 mm, 50 mm to 10 mm, 40 mm to 10 mm, 30 mm to 10 mm, 20 mm to 10 mm, 50 mm to 20 mm, 40 mm to 20 mm, 30 mm to 20 mm, 50 mm to 30 mm, 40 mm to 30 mm, or 50 mm to 40 mm. In some embodiments, the outer diameter 740 of the centering ring 650 is greater than or equal to the diameter of the opening 310. In some embodiments, the outer diameter 740 of the centering ring 650 is greater than or equal to the diameter of the opening 310 in the range of 50 mm to 0 mm, 40 mm to 0 mm, 30 mm to 0 mm, 20 mm to 0 mm, 10 mm to 0 mm, 50 mm to 10 mm, 40 mm to 10 mm, 30 mm to 10 mm, 20 mm to 10 mm, 50 mm to 20 mm, 40 mm to 20 mm, 30 mm to 20 mm, 50 mm to 30 mm, 40 mm to 30 mm, or 50 mm to 40 mm. Referring back to Figure 5, in operation 520, the concentricity of the centering ring 650 relative to the support surface 231 is determined. Figure 7B illustrates a vision system 700 positioned on the centering ring 650. In some embodiments, the vision system 700 is configured to determine the concentricity of the centering ring 650 relative to the support surface 231, which is positioned adjacent to and spaced apart from the inner surface 326 of the processing chamber cover 300. In one or more embodiments, the vision system 700 is a laser profilometer. In one or more embodiments, the vision system 700 is removably mounted to an opening 310 in the processing chamber cover 300. In some embodiments, the vision system 700 includes a support structure clamped to or around the opening 310. In some embodiments, the vision system 700 is configured to measure misalignment between the central axis 755 of the gas distribution assembly 105 and the central axis 760 of the support surface 231. In some embodiments, misalignment is defined as falling within the ranges of 50 mm to 0 mm, 40 mm to 0 mm, 30 mm to 0 mm, 20 mm to 0 mm, 10 mm to 0 mm, 50 mm to 10 mm, 40 mm to 10 mm, 30 mm to 10 mm, 20 mm to 10 mm, 50 mm to 20 mm, 40 mm to 20 mm, 30 mm to 20 mm, 50 mm to 30 mm, 40 mm to 30 mm, or 50 mm to 40 mm. In some embodiments, misalignment is recorded as the θ position of the centering ring 650 relative to the support surface 231. In some embodiments, during measurement, the vision system 700 is connected to the centering ring 650. Figure 8 illustrates the functionality of the vision device 700. In some embodiments, the vision device 700 includes a ring structure that positions the vision device 700 above the opening 310. In some embodiments, the vision device 700 includes a rotary motor with a rotating arm 840. In some embodiments, the rotating arm 840 rotates on an xy-platform to obtain measurements at different angular positions. In some embodiments, the rotating arm 840 is connected to a contour sensor 850. In some embodiments, the contour sensor 850 is guided to the edges of the substrate support 225 and the centering ring 650. In some embodiments, the contour sensor 850 is configured to detect the relative gap between the inner edge 860 of the centering ring 650 and the outer edge 870 of the substrate support 225 having a support surface 231. In some embodiments, the gap value is plotted with reference to the θ position of the centering ring 650 and the substrate support 225. In some embodiments, the gap value refers to the distance between the inner edge 860 of the centering ring 650 and the outer edge 870 of the substrate support 225, as if both are in the same horizontal plane. In some embodiments, the gap value is in the range of 50 mm to 0 mm, 40 mm to 0 mm, 30 mm to 0 mm, 20 mm to 0 mm, 10 mm to 0 mm, 50 mm to 10 mm, 40 mm to 10 mm, 30 mm to 10 mm, 20 mm to 10 mm, 50 mm to 20 mm, 40 mm to 20 mm, 30 mm to 20 mm, 50 mm to 30 mm, 40 mm to 30 mm, or 50 mm to 40 mm. Referring back to Figure 5, in operation 530, the substrate support 225 is rotated to be replaced by another substrate support 225. The adjacent opening 310 is rotated to position the other substrate support 225 having a support surface 231. In decision 540, the number of times the concentricity of the centering ring 650 relative to the support surface 231 is determined is considered. If the concentricity has been determined a predetermined number of times, method 500 moves to operation 550. If the concentricity has not been determined a predetermined number of times, method 500 moves back to operation 520. In some embodiments, the predetermined number of times is equal to the number of support surfaces 231. In some embodiments, the predetermined number of times is equal to a multiple of the number of support surfaces 231. In some embodiments, the processing chamber 100 has two, three, or four support surfaces 231 on the substrate support 225. In some embodiments, the concentricity of the centering ring 650 relative to the first, second, third, and fourth support surfaces 231 is determined. In some embodiments, the concentricity of the centering ring 650 relative to the first, second, third, and fourth support surfaces 231 is determined multiple times. In some embodiments, the degree of concentricity is determined once, twice, three times, four times, or more. In operation 550, the average center position of the centering ring 650 is determined based on all concentricities determined in operation 520. In some embodiments, the average center position of the centering ring 650 specifies the average center position of the center ring 650 relative to the first, second, third, and fourth support surfaces 231. In some embodiments, the average center position is determined based on a mathematical model. In some embodiments, the mathematical model includes a 5th-order polynomial regression model. In some embodiments, the mathematical model is configured to determine the outgoing point at a specific θ position. In some embodiments, the mathematical model includes thermal expansion offset. In some embodiments, the specific θ position is such that misalignment remains below a predetermined threshold. The predetermined threshold is within the range of misalignment between the central axis of the gas distribution assembly 152 and the central axis 153 of the support surface 231, ranging from 50 mm to 0 mm, from 40 mm to 0 mm, from 30 mm to 0 mm, from 20 mm to 0 mm, from 10 mm to 0 mm, from 50 mm to 10 mm, from 40 mm to 10 mm, from 30 mm to 10 mm, from 20 mm to 10 mm, from 50 mm to 20 mm, from 40 mm to 20 mm, from 30 mm to 20 mm, from 50 mm to 30 mm, from 40 mm to 30 mm, or from 50 mm to 40 mm. In operation 560, the position of the centering ring 650 is adjusted based on the average center position determined in operation 550. In some embodiments, the average center position is a function of the θ position. In some embodiments, the desired θ position is plotted based on various parameters. In some embodiments, these parameters include, but are not limited to, the vertical distance of the centering ring 650 from the support surface 231, the size of the opening 310, and the size of the centering ring 650. In some embodiments, a support structure clamped onto the centering ring 650 calibrates the centering ring 650 relative to the support surface 231. In some embodiments, an automated device is operatively connected to the vision system 700 and one or more of the centering rings 650. In some embodiments, the automated device is configured to move the centering ring 650 to the desired θ position. In operation 570, the centering ring 650 is bolted to the desired θ position. In some embodiments, the desired θ position is the final position. In some embodiments, after method 500, the vision system 700 is removed and the processing station 110 is installed through the centering ring 650 into the opening 310. Figure 7C shows a gas distribution assembly 105 positioned above the centering ring 650. In some embodiments, the processing station 110 has an outer diameter less than or equal to the inner diameter 730 of the centering ring 650. In some embodiments, the processing station 110 has an outer diameter smaller than the processing chamber cover opening 310 in the range of 1 mm to 10 mm, 1 mm to 8 mm, 1 mm to 6 mm, 1 mm to 4 mm, 1 mm to 5 mm, 1 mm to 2 mm, 3 mm to 10 mm, 3 mm to 8 mm, 3 mm to 6 mm, 3 mm to 4 mm, 5 mm to 10 mm, 5 mm to 8 mm, 5 mm to 6 mm, 7 mm to 10 mm, or 7 mm to 9 mm. In some embodiments, the substrate support 225 has an outer diameter in the range of 20 mm to 100 mm, 40 mm to 100 mm, 60 mm to 100 mm, 80 mm to 100 mm, 20 mm to 80 mm, 40 mm to 80 mm, 60 mm to 80 mm, 20 mm to 60 mm, 40 mm to 60 mm, or 20 mm to 40 mm, which is smaller than the opening diameter of the opening 310 of the processing chamber cover 300. Referring to Figure 4, some embodiments include a controller 495, which is further configured to be coupled to a vision system 700. In some embodiments, the controller 495 may be coupled to a motor to position the centering ring 650 to a predetermined θ position determined by the vision system 700. Throughout this specification, references to "one embodiment," "some embodiments," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of this disclosure. Therefore, the appearance of phrases such as "in one or more embodiments," "in some embodiments," "in one embodiment," or "in one embodiment" in various places throughout this specification does not necessarily refer to the same embodiment of this disclosure. Furthermore, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments. Although the disclosure herein has been described with reference to specific embodiments, those skilled in the art will understand that the described embodiments are merely illustrative of the principles and applications of this disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the methods and apparatus disclosed herein without departing from the spirit and scope of this disclosure. Therefore, this disclosure may include modifications and variations within the scope of the appended claims and their equivalents. 100: Processing chamber; 102: Outer shell; 104: Wall; 105: Gas distribution assembly; 106: Bottom; 109: Processing volume; 110: Processing station; 112: Gas distribution plate; 114: Front surface; 170: Protrusion; 180: Cover; 200: Base plate support assembly; 210: Central base; 211: Rotating shaft; 220: Support arm; 225: Base plate support; 230: Heater; 231: Support surface; 234: Support shaft; 250: Spacer; 280: Spray head; 286: Outer peripheral edge; 288: Hole; 290: Lip; 294: Discharge port; 300: Processing chamber cover; 310 : Station opening 325: Outer surface 326: Inner surface 330: Spacer 331: Top 332: Back surface 333: Bottom 334: Protrusion 335: Side wall 339: Opening 342: Flange 360: Gas funnel 400: Processing platform 410: Transfer station 411: First side 412: Second side 413: Third side 414: Fourth side 418: Slit valve 420: Buffer station 430: Robot 431: First arm 432: Second arm 450: Factory interface 455: Robot 495: Controller 496: Central processing unit (CPU) 497: Memory 498: Support Circuit 500: Method 510: Operation 520: Operation 530: Operation 540: Decision 550: Operation 560: Operation 570: Operation 610: Fully Deposited Area (FD) 620: Transition Area (TD) 630: No Deposited Area (ND) 650: Centering Ring 700: Vision System 730: Inner Diameter 740: Outer Diameter 750: Opening 755: Central Axis 760: Central Axis 840: Rotating Arm 850: Contour Sensor 860: Inner Edge 870: Outer Edge 110a: Processing Station 110b: Processing Station xy: Plane z: Axis To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be made with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only common embodiments of this disclosure and are not intended to limit its scope, as this disclosure allows for other equivalent embodiments. The embodiments described herein are shown by way of example and are not intended to be limiting in the accompanying drawings, where like element symbols indicate similar elements. For ease of understanding, the same element symbols have been used to identify common elements in the figures where possible. The figures are not drawn to scale and have been simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Figure 1 shows a cross-sectional isometric view of a processing chamber according to one or more embodiments of the present disclosure; Figure 2 illustrates a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure; Figure 3 illustrates a cross-sectional view of a portion of a processing chamber according to one or more embodiments of the present disclosure; Figure 4 illustrates a schematic representation of a processing tool according to one or more embodiments of the present disclosure; Figure 5 illustrates a processing method according to one or more embodiments of the present disclosure; Figure 6 illustrates a cross-sectional view of a portion of a processing chamber according to one or more embodiments of the present disclosure; Figures 7A through 7C illustrate schematic representations of a processing chamber during alignment according to one or more embodiments of this disclosure; and Figure 8 shows a schematic representation of a sensor device according to one or more embodiments of this disclosure. Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None. 200: Substrate support assembly 231: Supporting surface 650: Centering Ring 840: Rotary Arm 850: Contour Sensor 860: Inner Edge 870: Outer edge

Claims

1. A method for aligning a processing chamber, the method comprising the steps of: positioning a centering ring adjacent to an opening in a processing chamber cover such that the centering ring is loosely fixed in place, the processing chamber cover having an outer surface and an inner surface, the centering ring being positioned in contact with the outer surface and having an inner diameter and an outer diameter, the opening in the processing chamber cover having an opening diameter; positioning a vision system on the centering ring; determining, using the vision system, the concentricity of the centering ring relative to a first support surface of a substrate support, the substrate support being positioned adjacent to and spaced apart from the inner surface of the processing chamber cover; rotating the substrate support to position a second support surface of the substrate support adjacent to the opening in the processing chamber cover; determining the concentricity of the centering ring relative to the second support surface; determining an average center position of the centering ring based on the concentricity of the centering ring with respect to the first and second support surfaces; and adjusting the position of the centering ring to a final position based on the average center position.

2. The method of claim 1, wherein the processing chamber includes four support surfaces on the substrate support.

3. The method as described in claim 2 further includes the step of: determining the concentricity of the centering ring relative to a third support surface and a fourth support surface.

4. The method of claim 3, wherein the step of determining the average center position of the centering ring is based on the concentricity of the centering ring with the first support surface, the second support surface, the third support surface and the fourth support surface.

5. The method of claim 1, wherein the processing chamber cover includes more than one opening and the method is performed for each of the openings.

6. The method as described in claim 5, wherein the same number of openings and supporting surfaces exist.

7. The method as described in claim 6, wherein there are four openings and four support surfaces in the processing chamber cover.

8. The method of claim 1, wherein the step of determining the average center position of the centering ring includes a thermal expansion offset.

9. The method as described in claim 1, further comprising the step of bolting the centering ring in the final position.

10. The method of claim 1, wherein the centering ring has an inner diameter that is less than or equal to the outer diameter of the opening in the processing chamber cover.

11. The method of claim 1, further comprising the steps of: removing the vision system; and installing a processing station through the centering ring in the opening.

12. The method of claim 11, wherein the processing station has an outer diameter in the range of 1 mm to 5 mm smaller than the opening in the processing chamber cover.

13. The method of claim 1, wherein the vision system includes a laser profilometer.

14. The method of claim 13, wherein the laser profilometer evaluates an inner edge of the centering ring and an outer edge of the substrate support.

15. The method as described in claim 13, wherein the laser profilometer is connected to the centering ring during measurement.

16. The method of claim 15, wherein the laser profilometer is rotatable on an xy platform to obtain measurements at different angular positions.

17. The method of claim 1, wherein the substrate support has an outer diameter in a range of 50 mm to 80 mm smaller than the opening diameter in the processing chamber cover.

18. A method for aligning a processing chamber, the method comprising the steps of: positioning a centering ring adjacent to an opening in a processing chamber cover such that the centering ring is loosely fixed in place, the processing chamber cover having an outer surface and an inner surface, the centering ring being positioned in contact with the outer surface and having an inner diameter and an outer diameter, the opening in the processing chamber cover having an opening diameter; positioning a vision system on the centering ring; using the vision system to determine the concentricity of the centering ring relative to a first support surface of a substrate support member positioned adjacent to and spaced from the inner surface of the processing chamber cover; rotating the substrate support member to position a second support surface of the substrate support member adjacent to the opening in the processing chamber cover; determining the concentricity of the centering ring relative to the second support surface; rotating the substrate support member to position a third support surface of the substrate support member adjacent to the opening in the processing chamber cover; and determining the concentricity of the centering ring relative to the third support surface. The substrate support is rotated to position a fourth support surface of the substrate support adjacent to the opening in the processing chamber cover; the concentricity of the centering ring relative to the fourth support surface is determined; an average center position of the centering ring is determined based on the concentricity of the centering ring with the first support surface, the second support surface, the third support surface, and the fourth support surface; and the position of the centering ring is adjusted to a final position based on the average center position.

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