Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus includes: a substrate holding portion (5) having an adsorption holding surface (5a) for holding a first surface (2a) of a substrate (W); a processing head (7) configured to process the outer periphery of the substrate (W); a static pressure plate (9) having a fluid support surface (9a) facing the adsorption holding surface (5a); and a fluid supply line (10) connected to the static pressure plate (9) for supplying fluid in the space between the fluid support surface (9a) and a second surface (2b) of the substrate (W), wherein: the second surface (2b) is the opposite side of the first surface (2a) of the substrate (W); and the fluid support surface (9a) is larger than the adsorption holding surface (5a).

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing the outer periphery of a substrate such as a wafer, and particularly to a substrate processing apparatus and a substrate processing method for processing the outer periphery of a substrate by pressing a processing tool against the outer periphery of the substrate with a processing head. [Previous Technology]

[0002] In recent years, components such as memory circuits, logic circuits, and image sensors (e.g., CMOS sensors) have become increasingly integrated. During the fabrication process of these components, foreign matter such as microparticles or dust can adhere to them. This foreign matter can cause short circuits in wiring or circuit malfunctions. Therefore, to improve component reliability, the wafers on which the components are formed must be cleaned to remove foreign matter.

[0003] On the back side of the wafer, there may also be foreign matter such as microparticles or dust adhering to it. When such foreign matter adheres to the back side of the wafer, the wafer separates from the platform reference plane of the exposure apparatus, and the wafer surface tilts relative to the platform reference plane, resulting in patterning deviation or focal length deviation.

[0004] Therefore, as shown in FIG. 9, a polishing apparatus is proposed for removing foreign matter adhering to a wafer. In the polishing apparatus shown in FIG. 9, the wafer W is held and rotated by a vacuum adsorption platform 500. A liquid (e.g., pure water) is supplied to the surface 501 of the wafer W. The processing head 505 slightly removes the outer periphery of the back surface 502 of the rotating wafer W by pressing against it. As a result, foreign matter can be removed from the outer periphery of the back surface 502 of the wafer W.

[0005] Similarly, as shown in FIG10, foreign matter can be removed from the outer periphery of the surface side 501 of the wafer W by pressing the processing head 505 against it.

[0006] [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Publication No. 2018-139258 [Summary of the Invention]

[0007] [Problem to be Solved by the Invention] Therefore, when the processing head 505 is pressed against the outer periphery of the back side surface 502 of the wafer W, as shown in FIG11, the wafer W bends upward. As a result, the outer periphery of the back side surface 502 of the wafer W cannot be properly processed. Furthermore, the liquid supplied to the wafer W conflicts with the processing head 505, and the liquid containing polishing debris may bounce back to the surface surface 501 of the wafer W. The polishing debris contained in such liquid causes contamination of the wafer W, resulting in a decrease in yield.

[0008] Similarly, as shown in FIG12, when the processing head 505 grinds the outer periphery of the surface 501 of the wafer W, the liquid containing grinding debris collides with the processing head 505 and flows back towards the center of the wafer W. Such backflow of liquid containing grinding debris causes contamination of the wafer W, resulting in a decrease in yield.

[0009] Therefore, the present invention provides a substrate processing apparatus and a substrate processing method, which can prevent the substrate from bending when the processing head presses against the outer periphery of a substrate such as a wafer W, and further prevent substrate contamination caused by processing debris.

[0010] [Means for solving the problem] In one embodiment, a substrate processing apparatus is provided, comprising: a substrate holding portion having: an adsorption holding surface for holding a first surface of a substrate; a processing head configured to process an outer periphery of the substrate; a static pressure plate having: a fluid support surface facing the adsorption holding surface; and a fluid supply line connected to the static pressure plate for supplying fluid in the space between the fluid support surface and a second surface of the substrate, wherein: the second surface is the opposite side of the first surface of the substrate; and the fluid support surface is larger than the adsorption holding surface.

[0011] In one embodiment, the processing head is configured to process the outer periphery of the first surface. In one embodiment, the processing head is movable to process both the outer periphery of the first surface and the outer periphery of the second surface. In one embodiment, the static pressure plate has a notch into which the processing head can enter. In one embodiment, the substrate processing apparatus further includes a static pressure plate moving device that moves the static pressure plate in directions away from and towards the adsorption holding surface. In one embodiment, the substrate processing apparatus further includes a static pressure plate rotating device that rotates the static pressure plate. In one embodiment, the substrate processing apparatus further includes a cleaning fluid supply nozzle that supplies cleaning fluid to the upper surface of the static pressure plate. In one embodiment, the substrate processing apparatus further includes a flow control valve that regulates the flow rate of the fluid supplied to the space; and an operation control unit that operates the fluid control valve based on the force applied from the processing head to the outer periphery of the substrate.

[0012] In one embodiment, a substrate processing method is provided, wherein the substrate is rotated while a first surface of the substrate is held by an adsorption holding surface; a processing head is used to press a processing tool against the outer periphery of the substrate to process the outer periphery; and fluid is supplied to the space between the outer periphery of the substrate and the fluid support surface of a static pressure plate during the processing of the outer periphery; wherein the second surface is the side opposite to the first surface of the substrate; and the fluid support surface is larger than the adsorption holding surface.

[0013] In one embodiment, the process of processing the outer periphery of the aforementioned substrate is a process of processing at least the outer periphery of the aforementioned first surface. In one embodiment, the process of processing the outer periphery of the aforementioned substrate is a process of processing the outer periphery of both the aforementioned first surface and the aforementioned second surface. In one embodiment, the processing head processes the outer periphery of the aforementioned second surface while entering the notch formed in the aforementioned static pressure plate. In one embodiment, the substrate processing method further includes a process of supplying a cleaning liquid to the upper surface of the aforementioned static pressure plate after processing the outer periphery of the aforementioned substrate. In one embodiment, the substrate processing method further includes a process of rotating the aforementioned static pressure plate after processing the outer periphery of the aforementioned substrate. In one embodiment, the flow rate of the aforementioned fluid supplied to the aforementioned space is adjusted according to the force applied from the aforementioned processing head to the outer periphery of the aforementioned substrate. In one embodiment, the aforementioned fluid is a liquid.

[0014] The processing head presses the processing tool against the outer periphery of the first surface of the substrate, and the fluid pressure between the fluid support surface of the static pressure plate and the second surface of the substrate is applied to the second surface of the substrate. That is, fluid pressure is applied to the substrate from the opposite side of the processing head while the substrate is held in place. Such fluid pressure prevents the substrate from bending due to the pressing pressure of the processing head. As a result, the processing head can apply a target pressing pressure to the substrate, and the outer periphery of the first surface of the substrate can be properly processed. Furthermore, the static pressure plate, which has a fluid support surface larger than the adsorption and holding surface, covers the second surface of the substrate, protecting the second surface from liquid containing processing debris. As a result, substrate contamination is prevented.

Implementation Method

[0016] Hereinafter, a substrate processing apparatus and substrate processing method for processing the outer periphery of a substrate such as a wafer will be described with reference to the drawings. Specific examples of processing the outer periphery of a substrate, such as grinding and cleaning, will be given.

[0017] FIG1 shows an example of a substrate. In this embodiment, the first surface 2a of the substrate W is the back surface of the substrate W where no element is formed or where no element is planned to be formed, i.e., the non-element surface. The second surface 2b of the substrate W on the opposite side of the first surface 2a is the surface where an element is formed or where an element is planned to be formed, i.e., the element surface. The first surface 2a and the second surface 2b are flat surfaces.

[0018] The outer periphery of the first surface 2a of the substrate W is an annular flat surface located around the central region of the first surface 2a of the substrate W. The outer periphery of the second surface 2b of the substrate W is also an annular flat surface located around the central region of the second surface 2b of the substrate W. The peripheral edge 2c of the substrate W is the outermost annular curved surface of the substrate W. The peripheral edge 2c connects the outer periphery of the first surface 2a and the outer periphery of the second surface 2b. The peripheral edge 2c is also referred to as the beveled surface.

[0019] FIG2 shows a schematic diagram of one embodiment of the substrate processing apparatus. As shown in FIG2, the substrate processing apparatus includes: a substrate holding section 5 having an adsorption holding surface 5a, the adsorption holding surface 5a holding a first surface 2a of a substrate W; a processing head 7 disposed to process the outer periphery of the substrate W; a static pressure plate 9 having a fluid support surface 9a facing the adsorption holding surface 5a; and a fluid supply line 10 connected to the static pressure plate 9, supplying fluid in the space between the fluid support surface 9a and the second surface 2b of the substrate W. In this embodiment, the adsorption holding surface 5a and the substrate W are circular, and the fluid support surface 9a of the static pressure plate 9 is also circular. The size of the fluid support surface 9a may be smaller than the size of the substrate W, or it may be the same size.

[0020] A vacuum line 12 is connected to the substrate holding portion 5. One end of the vacuum line 12 is connected to an opening 5b formed in the adsorption holding surface 5a, and the other end of the vacuum line 12 is connected to a vacuum source (e.g., a vacuum pump) not shown in the figure. The central region of the first surface 2a of the substrate W is held in the adsorption holding surface 5a by the vacuum attraction generated in the opening 5b. In this embodiment, the substrate W is horizontally supported on the substrate holding portion 5 with its first surface 2a facing downwards.

[0021] The fluid support surface 9a of the static pressure plate 9 is located directly above the adsorption holding surface 5a of the substrate holding portion 5. The fluid support surface 9a is larger than the adsorption holding surface 5a, and the outermost edge of the fluid support surface 9a is located further outward in the radial direction than the adsorption holding surface 5a. The outer periphery of the first surface 2a and the outer periphery of the second surface 2b (see Figure 1) are also located further outward in the radial direction than the adsorption holding surface 5a of the substrate holding portion 5.

[0022] The substrate holding unit 5 includes: a substrate stage 14 having an adsorption and holding surface 5a; and a stage motor 15 for rotating the substrate stage 14 around the center of the adsorption and holding surface 5a. The stage motor 15 can rotate the substrate W on the adsorption and holding surface 5a. As shown in FIG2, the stage motor 15 may be indirectly connected to the substrate stage 14 via a belt or the like, or it may be directly connected to the substrate stage 14.

[0023] The processing head 7 is disposed on the lower side of the outer periphery of the first surface 2a of the substrate W held by the substrate holding portion 5. The processing head 7 includes: a pressing member 21, which presses an abrasive belt 20, which is an example of a processing tool, against the first surface 2a of the substrate W; and an actuator 24, which applies pressing force to the pressing member 21. The actuator 24 presses the pressing member 21 toward the outer periphery of the first surface 2a of the substrate W, and the pressing member 21 grinds (processes) the outer periphery of the first surface 2a by pressing the abrasive belt 20 against the outer periphery of the first surface 2a of the substrate W from its back side.

[0024] The substrate processing apparatus further includes a processing head translation device 30, which moves the processing head 7 along the first surface 2a. The processing head translation device 30 is connected to the processing head 7. The processing head translation device 30 is, for example, a combination of a servo motor and a ball screw mechanism, or a cylinder. The processing head 7 presses the polishing belt 20 against the outer periphery of the first surface 2a of the substrate W, and the processing head translation device 30 moves the processing head 7 radially outward along the first surface 2a of the substrate W, so that the processing head 7 can process (polish) the entire outer periphery of the first surface 2a.

[0025] The substrate processing apparatus further includes: a polishing tape supply mechanism 40, which supplies the polishing tape 20 to the processing head 7 and retrieves the polishing tape 20 from the processing head 7. The polishing tape supply mechanism 40 includes: a tape take-up spool 41 connected to one end of the polishing tape 20; a tape take-up spool 42 connected to the other end of the polishing tape 20; and a tape supply device 45 that supplies the polishing tape 20 in its longitudinal direction. In this embodiment, the tape supply device 45 is provided at the processing head 7. In one embodiment, the tape supply device 45 may also be provided away from the processing head 7.

[0026] The belt feeding device 45 includes: a belt feeding roller 46 connected to a belt feeding motor (not shown); and a feed roller 47 that presses the grinding belt 20 against the belt feeding roller 46. The grinding belt 20 is sandwiched between the belt feeding roller 46 and the feed roller 47. When the belt feeding motor rotates the belt feeding roller 46, the grinding belt 20 travels in its longitudinal direction. More specifically, the grinding belt 20 travels from the belt take-up drum 41 through the processing head 7 onto the belt take-up drum 42.

[0027] The tape take-up spool 41 and tape take-up spool 42 are respectively connected to spool motors 48 and 49. These spool motors 48 and 49 impart counter-rotating torque to the tape take-up spool 41 and tape take-up spool 42, thereby imparting tension to the abrasive belt 20. The positions of the tape take-up spool 41 and tape take-up spool 42 can also be reversed.

[0028] In one embodiment, the drum motors 48 and 49 may also be used as the belt feeding device, replacing the aforementioned belt feeding device 45. That is, when the belt take-up drum 42 is rotated by the drum motor 49, the abrasive belt 20 travels from the belt take-up drum 41 through the processing head 7 on the belt take-up drum 42. The torque generated by the drum motor 49 is greater than that generated by the drum motor 48, thus imparting tension to the abrasive belt 20.

[0029] The static pressure plate 9 has a through hole 9b extending through its center. One end of the through hole 9b is connected to the fluid supply line 10, and the other end of the through hole 9b opens into the fluid support surface 9a. In this embodiment, the fluid supply line 10 is a fluid supply line that supplies fluid in the space between the fluid support surface 9a and the second surface 2b of the substrate W. Pure water can be used as an example of a fluid. The fluid supply line 10 is connected to a fluid supply source (e.g., a liquid supply source such as a pure water supply source) not shown in the figure. A flow control valve 54 is installed on the fluid supply line 10, and the flow rate of the liquid supplied to the static pressure plate 9 through the fluid supply line 10 is regulated by the flow control valve 54.

[0030] The substrate processing apparatus further includes a static pressure plate moving device 60, which moves the static pressure plate 9 in a direction away from and towards the adsorption and holding surface 5a. The static pressure plate moving device 60 may also be configured to raise the static pressure plate 9, or it may be configured to move the static pressure plate 9 horizontally. When the substrate W is transported on the adsorption and holding surface 5a, the static pressure plate moving device 60 operates to move the static pressure plate 9 in a direction away from the adsorption and holding surface 5a, and after the substrate W is held on the adsorption and holding surface 5a, the static pressure plate 9 is moved to above the adsorption and holding surface 5a.

[0031] The outer periphery of the first surface 2a of the substrate W is processed as follows. While the central region of the first surface 2a of the substrate W is held on the adsorption holding surface 5a, the substrate W is rotated by the substrate holding portion 5. The static pressure plate 9 is independent of the substrate holding portion 5 and remains stationary. The fluid support surface 9a of the static pressure plate 9 faces and is close to the second surface 2b of the substrate W. The distance between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W is 0.1 mm to 5.0 mm.

[0032] Liquid (e.g., pure water) is supplied to the static pressure plate 9 through the fluid supply line 10, filling the space between the fluid support surface 9a and the second surface 2b of the substrate W. Liquid pressure is applied to the second surface 2b of the substrate W. The liquid flows outward from the space between the fluid support surface 9a and the second surface 2b of the substrate W and flows out from the substrate W. The processing head 7 presses the polishing belt 20, which serves as a processing tool, against the outer periphery of the first surface 2a of the substrate W. The processing head translation device 30 moves the processing head 7 outward in the radial direction of the substrate W until the processing head 7 reaches the peripheral edge 2c of the substrate W (refer to the arrow in Figure 2). The processing head 7 can make the polishing belt 20 contact the entire outer periphery of the first surface 2a. As a result, the outer periphery of the first surface 2a is processed (polished).

[0033] The grinding head 7 presses the grinding belt 20 against the outer periphery of the first surface 2a of the substrate W. The liquid pressure existing between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W is applied to the second surface 2b of the substrate W. That is, liquid pressure is applied to the substrate W from the opposite side of the processing head 7 while the substrate W is being held in place. This liquid pressure prevents the substrate W from bending due to the pressing pressure from the processing head 7. As a result, the processing head 7 can apply a targeted pressing pressure to the substrate W, and can properly process the outer periphery of the first surface 2a of the substrate W.

[0034] Furthermore, the static pressure plate 9, which has a fluid support surface 9a larger than the adsorption and holding surface 5a, covers the second surface 2b of the substrate W, protecting the second surface 2b from the liquid containing processing debris. As a result, contamination of the substrate W can be prevented.

[0035] In one embodiment, the fluid supply line 10 may also be a gas supply line that supplies gas (e.g., inert gas such as nitrogen) in the space between the fluid support surface 9a and the second surface 2b of the substrate W.

[0036] The operation of the substrate processing apparatus is controlled by the motion control unit 70. The motion control unit 70 is electrically connected to the substrate holding unit 5, the processing head 7, the polishing belt supply mechanism 40, the processing head translation device 30, the static pressure plate moving device 60, and the flow control valve 54. These operations are controlled by the motion control unit 70.

[0037] The motion control unit 70 is composed of at least one electronic computer. The motion control unit 70 has a memory device 70a and a calculation device 70b. The memory device 70a stores a program internally. The calculation device 70b is configured to execute calculations according to the commands contained in the program. The memory device 70a includes a main memory device such as random access memory (RAM), an auxiliary memory device such as a hard disk drive (HDD), and a solid-state drive (SSD). Examples of calculation devices 70b include a CPU (central computing unit) and a GPU (graphics processing unit). However, the specific structure of the motion control unit 70 is not limited to these examples.

[0038] The force applied from the processing head 7 to the outer periphery of the first surface 2a of the substrate W can be varied depending on the type of substrate W, the processing formula of the substrate W, and other conditions. As a result, the liquid pressure applied to the second surface 2b of the substrate W can also be varied. Here, in one embodiment, the liquid flow rate supplied to the space between the fluid support surface 9a and the second surface 2b of the substrate W can also be adjusted according to the force applied from the processing head 7 to the outer periphery of the substrate W. More specifically, the operation control unit 70 is configured to operate the flow control valve 54 according to the force applied from the processing head 7 to the outer periphery of the first surface 2a of the substrate W. According to this embodiment, since the liquid pressure applied to the second surface 2b of the substrate W increases in response to the increase in the force applied from the processing head 7 to the outer periphery of the substrate W, bending of the substrate W can be prevented more reliably.

[0039] The force applied from the processing head 7 to the outer periphery of the first surface 2a of the substrate W is generated by the actuator 24 of the processing head 7. The force generated by the actuator 24 can be estimated from the command value of the force generated by the actuator 24. For example, if the actuator 24 is a cylinder, the force generated by the actuator 24 can be estimated from the command value of the pressure regulator that controls the gas pressure supplied to the cylinder. In other examples, if the actuator 24 is a linear motor or a servo motor, the force generated by the actuator 24 can be estimated from the command value of the power to be supplied to the linear motor or servo motor. The force generated by the actuator 24 can also be directly measured using a load measuring device such as a force gauge.

[0040] The motion control unit 70 can operate the flow control valve 54 based on the estimated or measured value of the force generated by the actuator 24, so as to remove the force applied to the first surface 2a of the substrate W by liquid pressure. In one embodiment, a plurality of processing heads 7 may be provided for grinding the outer periphery of the first surface 2a of the substrate W.

[0041] FIG3 is a schematic diagram of another embodiment of the substrate processing apparatus, and is a side view from the direction of the polishing belt supply mechanism 40. FIG4 is a top surface view of the substrate processing apparatus shown in FIG3. For ease of understanding of the structure, the polishing belt supply mechanism 40, the static pressure plate moving device 60, the motion control unit 70, etc., are omitted in FIG3 and FIG4. In particular, the structure of this embodiment, which is not described, is the same as that of the embodiment described with reference to FIG2, so repeated description is omitted.

[0042] The substrate processing apparatus of this embodiment includes a processing head tilting device 90, which tilts the processing head 7 relative to the adsorption and holding surface 5a of the substrate holding portion 5. This processing head tilting device 90 includes a crank arm 91 connected to the processing head 7 and an arm rotation device 92 for rotating the crank arm 91. One end of the crank arm 91 is located at substantially the same height as the adsorption and holding surface 5a and is connected to the arm rotation device 92. The other end of the crank arm 91 is connected to the processing head 7. The arm rotation device 92 is connected to the processing head translation device 30. In other words, the processing head 7 is connected to the processing head translation device 30 via the processing head tilting device 90.

[0043] When the arm rotating device 92 rotates the crank arm 91, the entire processing head 7 can be tilted relative to the adsorption holding surface 5a and the substrate W. However, the specific structure of the processing head tilting device 90 is not limited to the embodiments shown in FIG3 and FIG4.

[0044] The static pressure plate 9 has a notch 9c through which the processing head 7 can enter. The notch 9c is formed on the outer periphery of the static pressure plate 9 and has a width greater than the width of the processing head 7. The position of the notch 9c corresponds to the position of the processing head 7. In one embodiment, a plurality of processing heads 7 for grinding the outer periphery of the substrate W may also be provided. In this case, the static pressure plate 9 may also have a plurality of notches 9c corresponding to the plurality of processing heads 7.

[0045] Figure 5 shows a side view of the processing head 7 tilted upwards by the processing head tilting device 90 until the processing head 7 faces the second surface 2b of the substrate W. As shown in Figure 5, when the processing head 7 faces the second surface 2b of the substrate W, the processing head 7 enters the fluid support surface 9a of the static pressure plate 9. Therefore, the processing head 7 can process (grind) the outer periphery of the second surface 2b of the substrate W without contacting the static pressure plate 9.

[0046] The outer periphery of the second surface 2b of the substrate W can be processed in the same way as the outer periphery of the first surface 2a of the substrate W. That is, liquid (e.g., pure water) is supplied to the static pressure plate 9 through the fluid supply line 10, filling the space between the fluid support surface 9a and the second surface 2b of the substrate W. The liquid flows outward from the space between the fluid support surface 9a and the second surface 2b of the substrate W and flows out from the substrate W. The processing head 7 presses the polishing belt 20, which serves as a processing tool, against the outer periphery of the second surface 2b of the substrate W, and the processing head translation device 30 moves the processing head 7 to the outer side of the substrate W in the radial direction (see the arrow in Figure 5). The processing head 7 can make the polishing belt 20 contact the entire outer periphery of the second surface 2b. As a result, the outer periphery of the second surface 2b is processed (polished).

[0047] The polishing head 7 presses the polishing belt 20 against the outer periphery of the second surface 2b of the substrate W, and liquid flows outward in the radial direction within the space between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W. This liquid flow effectively prevents the processing debris (polishing debris) generated by the contact between the polishing belt 20 and the substrate W from moving to the center side of the substrate W. Therefore, contamination of the second surface 2b of the substrate W caused by processing debris can be prevented.

[0048] According to the embodiment shown in FIG5, the processing head 7 can process the outer periphery of both the first surface 2a and the second surface 2b of the substrate W. If the outer periphery of the first surface 2a or the outer periphery of the second surface 2b is processed first, the other is processed later. When processing the outer periphery of the first surface 2a, the processing head 7 moves to the outer side of the substrate W in the radial direction until it reaches the peripheral edge 2c of the substrate W, and is then moved by the processing head translation device 30.

[0049] The processing head 7 can further process the peripheral portion 2c of the substrate W. Specifically, as shown in FIG6, the processing head 7 presses the polishing belt 20 against the peripheral portion 2c of the rotating substrate W, and the processing head tilting device 90 (refer to FIG3 and FIG4) tilts the processing head 7 along the peripheral portion 2c of the substrate W. During the polishing of the peripheral portion 2c of the substrate W, as in the above embodiment, liquid flows outward in the radial direction in the space between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W.

[0050] The processing of the peripheral portion 2c of the substrate W can also be performed after the processing of either the outer peripheral portion of the first surface 2a or the outer peripheral portion of the second surface 2b is completed. That is, in one embodiment, the outer peripheral portion of the first surface 2a is processed in step 1, the peripheral portion 2c of the substrate W is processed in step 2, and the outer peripheral portion of the second surface 2b is processed in step 3. The processing of the outer peripheral portion of the first surface 2a in step 1 and the processing of the peripheral portion 2c of the substrate W in step 2 can be performed continuously without stopping the operation of the processing head 7.

[0051] In other embodiments, the outer periphery of the second surface 2b is processed in step 1, the peripheral edge 2c of the substrate W is processed in step 2, and the outer periphery of the first surface 2a is processed in step 3. In this case, the processing of the outer periphery of the second surface 2b in step 1 and the processing of the peripheral edge 2c of the substrate W in step 2 can be performed continuously without stopping the operation of the processing head 7.

[0052] According to the embodiment shown in FIG6, since the outer periphery of the first surface 2a, the peripheral edge 2c of the substrate W and the second surface 2b are processed continuously, the processing yield of the substrate W can be increased.

[0053] FIG7 shows a schematic diagram of another embodiment of the substrate processing apparatus. In particular, the structure and operation of this embodiment, which are not described, are the same as those of the embodiment described with reference to FIG2, so repeated descriptions are omitted. As shown in FIG7, the substrate processing apparatus of this embodiment includes a static pressure plate rotating device 100 for rotating the static pressure plate 9. This static pressure plate rotating device 100 includes: a first pulley 101 fixed to the shaft portion 9d of the static pressure plate 9; a plate rotation motor 102; a second pulley 103 fixed to the drive shaft of the plate rotation motor 102; and a belt 105 suspended between the first pulley 101 and the second pulley 103.

[0054] The liquid supply line 10 is connected to a rotary joint 110 fixed to the shaft portion 9d of the static pressure plate 9. The shaft portion 9d of the static pressure plate 9 is rotatably supported by a bearing 112, which is held by a bearing housing 113. The static pressure plate moving device 60 is connected to the bearing housing 113.

[0055] During the processing of the outer periphery (and peripheral portion 2c) of the substrate W, the static pressure plate rotating device 100 does not rotate the static pressure plate 9. In other words, the static pressure plate 9 remains stationary during the substrate W processing. After the substrate W is processed, the static pressure plate rotating device 100 rotates the static pressure plate 9, thereby removing the liquid adhering to the static pressure plate 9 (especially the liquid adhering to the upper surface of the static pressure plate 9) due to centrifugal force. As a result, the static pressure plate 9 can be kept clean. Alternatively, the static pressure plate 9 can be rotated, and liquid can be supplied from the fluid supply line 10 to the space between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W.

[0056] In one embodiment, the static pressure plate rotating device 100 may also be replaced by a gear combination instead of the combination of the first pulley 101, the second pulley 103 and the belt 105.

[0057] As shown in one embodiment of FIG8, the substrate processing apparatus further includes a cleaning solution supply nozzle 120 for supplying cleaning solution to the upper surface of the static pressure plate 9. The cleaning solution supply nozzle 120 is connected to the cleaning solution supply line 121 and faces the upper surface of the static pressure plate 9. After processing the outer periphery of the substrate W, cleaning solution is supplied from the cleaning solution supply nozzle 120 to the upper surface of the static pressure plate 9. Pure water is used as the cleaning solution. According to the embodiment shown in FIG8, the static pressure plate 9 can be kept clean.

[0058] The static pressure plate 9 can also be rotated by the static pressure plate rotating device 100, and cleaning liquid can be supplied to the upper surface of the static pressure plate 9 from the cleaning liquid supply nozzle 120. In one embodiment, the static pressure plate 9 can also be rotated by the static pressure plate rotating device 100, and cleaning liquid can be supplied to the upper surface of the static pressure plate 9 from the cleaning liquid supply nozzle 120, and fluid can be supplied from the fluid supply line 10 to the space between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W.

[0059] The above embodiments can be appropriately combined. For example, the static pressure plate rotating device 100 shown in FIG7 can be combined with the embodiments described with reference to FIG3 to FIG6. Similarly, the cleaning liquid supply nozzle 120 shown in FIG8 can be combined with the embodiments described with reference to FIG3 to FIG6.

[0060] In the above embodiments, an abrasive belt 20 is used as the processing tool, but a whetstone, cleaning belt, cleaning brush, non-woven fabric belt, cleaning pad, etc., may also be used instead of the abrasive belt 20 as the processing tool. As a specific example of processing the outer periphery of the substrate W, in addition to the outer periphery of the abrasive substrate W, the outer periphery of the cleaning substrate W is also mentioned.

[0061] The above-described embodiments are those for which a person skilled in the art can carry out the present invention. Various modifications of the above-described embodiments can be readily accomplished by a person skilled in the art, and the technical concept of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is interpreted in the broadest possible sense according to the technical concept defined in the claims.

[0062] [Industrial Applicability] The present invention relates to a substrate processing apparatus and a substrate processing method that can be used to process the outer periphery of a substrate by pressing a processing head against the outer periphery of the substrate. [Simplified Explanation of the Diagram]

[0015] [Fig. 1] A side view showing an example of a substrate. [Fig. 2] A schematic diagram showing one embodiment of the substrate processing apparatus. [Fig. 3] A schematic diagram showing another embodiment of the substrate processing apparatus. [Fig. 4] A top surface view of the substrate processing apparatus shown in Fig. 3. [Fig. 5] A side view showing the state in which the processing head is tilted upward by a processing head tilting device up to the second surface of the substrate. [Fig. 6] A schematic diagram showing the state in which the processing head processes the periphery of the substrate. [Fig. 7] A schematic diagram showing yet another embodiment of the substrate processing apparatus. [Fig. 8] A schematic diagram showing yet another embodiment of the substrate processing apparatus. [Fig. 9] A schematic diagram showing a previous example of a polishing apparatus. [Fig. 10] A schematic diagram showing a previous example of a polishing apparatus. [Fig. 11] A schematic diagram showing a previous example of a polishing apparatus. [Fig. 12] A schematic diagram showing a previous example of a polishing apparatus.

Claims

1. A substrate processing apparatus comprising: a substrate holding portion having an adsorption holding surface for holding a first surface of a substrate; a processing head configured to process an outer periphery of the substrate; a static pressure plate having a fluid support surface facing the adsorption holding surface; and a fluid supply line connected to the static pressure plate for supplying fluid through a space between the fluid support surface and a second surface of the substrate, wherein: The aforementioned second side is the opposite side of the aforementioned first side of the aforementioned substrate; the aforementioned fluid support surface is larger than the aforementioned adsorption and retention surface.

2. The substrate processing apparatus as described in claim 1, wherein the aforementioned processing head is configured to process the outer periphery of the aforementioned first surface.

3. The substrate processing apparatus as described in claim 2, wherein the aforementioned processing head is movable to process the outer periphery of the aforementioned first surface and the outer periphery of the aforementioned second surface.

4. The substrate processing apparatus as described in claim 3, wherein the aforementioned static pressure plate has a notch into which the aforementioned processing head can enter.

5. The substrate processing apparatus described in any one of claims 1 to 4 further comprises: a static pressure plate moving device for moving the aforementioned static pressure plate in directions away from and towards the aforementioned adsorption and holding surface.

6. The substrate processing apparatus described in any one of claims 1 to 4 further comprises: a static pressure plate rotation device for rotating the aforementioned static pressure plate.

7. The substrate processing apparatus as described in any one of claims 1 to 4 further comprises: a cleaning fluid supply nozzle for supplying cleaning fluid to the upper surface of the aforementioned static pressure plate.

8. The substrate processing apparatus as described in any one of claims 1 to 4 further comprises: a flow control valve for regulating the flow rate of the fluid supplied to the aforementioned space; and an operation control unit for operating the aforementioned fluid control valve based on the force applied from the aforementioned processing head to the outer periphery of the aforementioned substrate.

9. A substrate processing method comprising: rotating the substrate while holding a first surface of the substrate with an adsorption holding surface; pressing a processing tool against the outer periphery of the substrate with a processing head to process the outer periphery; supplying fluid to the space between the outer periphery of the substrate and a fluid support surface of a static pressure plate during the processing of the outer periphery; wherein the second surface is the side opposite to the first surface of the substrate; and the fluid support surface is larger than the adsorption holding surface.

10. The substrate processing method as claimed in claim 9, wherein the step of processing the outer peripheral portion of the aforementioned substrate is a step of processing at least the outer peripheral portion of the aforementioned first surface.

11. The substrate processing method as claimed in claim 10, wherein the step of processing the outer peripheral portion of the aforementioned substrate is a step of processing the outer peripheral portion of the aforementioned first surface and the outer peripheral portion of the aforementioned second surface.

12. The substrate processing method as claimed in claim 11, wherein the aforementioned processing head processes the outer periphery of the aforementioned second surface while entering the notch formed in the aforementioned static pressure plate.

13. The substrate processing method according to any one of claims 9 to 12 further includes a step of supplying a cleaning solution to the upper surface of the static pressure plate after processing the outer peripheral portion of the substrate.

14. The substrate processing method according to any one of claims 9 to 12 further includes: a step of rotating the aforementioned static pressure plate after processing the outer periphery of the aforementioned substrate.

15. The substrate processing method according to any one of claims 9 to 12, wherein the flow rate of the fluid supplied to the space is adjusted according to the force applied from the processing head to the outer periphery of the substrate.

16. The substrate processing method according to any one of claims 9 to 12, wherein the aforementioned fluid is a liquid.

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