Measurement system and substrate processing system, and device manufacturing method

Abstract

Measurement systems used in micro-component manufacturing lines (500) 1) It is set up independently from the exposure device. Measurement system (500) 1) Equipped with: multiple measuring devices (100 1~100 3) Perform measurement processing on the substrate (e.g., the substrate after at least one process and before the coating of the inductive agent); and a transfer system for transferring the substrate to a plurality of measuring devices. The plurality of measuring devices includes a first measuring device (100) that acquires position information of a plurality of marks formed on the substrate under the setting of the first condition. 1) and a second measuring device (100) that, under the setting of condition 1, acquires position information of a plurality of marks formed on another substrate (e.g., another substrate included in the same batch as the substrate for which position information is acquired by the first measuring device under the setting of condition 1). 2).

Description

Measuring System, Substrate Processing System, and Element Manufacturing Method The present invention relates to a measuring system, a substrate processing system, and an element manufacturing method. More specifically, it relates to a measuring system used in a manufacturing line for micro components, a substrate processing system including the measuring system, and an element manufacturing method using an exposure device that forms part of the substrate processing system. In the lithography step of manufacturing micro components such as semiconductor elements, when performing overlay exposure on a wafer, after the wafer has undergone process steps such as resist coating, development, etching, CVD (chemical vapor deposition), CMP (chemical mechanical polishing), etc., the alignment of the irradiation areas in the previous layer may sometimes be strained due to these processes, and this strain may be the main cause of reduced overlay accuracy. In view of this, recent exposure devices have a grid correction function, etc., that can correct not only the first-order components of wafer deformation but also non-linear components such as the alignment of irradiation areas generated by the process (see, for example, Patent Document 1). However, with the miniaturization of integrated circuits, the requirements for overlay accuracy have gradually become more stringent. To perform higher-precision correction, it is essential to increase the number of sampled irradiation areas in wafer alignment (EGA), that is, to increase the number of marks to be detected. Therefore, in recent years, a dual-stage type of exposure device that can increase the number of sampled irradiation areas while maintaining productivity has been adopted. [Prior Art Documents ] [Patent Document 1 ] U.S. Patent Application Publication No. 2002 / 0042664 According to a first aspect, there is provided a measuring system used in a manufacturing line for micro components, which includes: a plurality of measuring devices that respectively perform measurement processing on a substrate; and a transfer system for transferring the substrate to and from the plurality of measuring devices. The plurality of measuring devices include a first measuring device that obtains position information of a plurality of marks formed on the substrate and a second measuring device that obtains position information of a plurality of marks formed on the substrate. The first measuring device can obtain position information of a plurality of marks formed on the substrate under the setting of a first condition, and the second measuring device can obtain position information of a plurality of marks formed on another substrate under the setting of the first condition. According to a second aspect, there is provided a measurement system used in a manufacturing line of micro-components, which includes: a plurality of measurement devices that respectively perform measurement processing on a substrate; and a transfer system that transfers the substrate with the plurality of measurement devices; the plurality of measurement devices include a first measurement device that obtains position information of a plurality of marks formed on the substrate and a second measurement device that obtains position information of a plurality of marks formed on the substrate; it is possible to obtain position information of a plurality of marks formed on the substrate by the first measurement device, and obtain position information of a plurality of marks formed on another substrate included in the same batch as the substrate by the second measurement device. According to a third aspect, there is provided a measurement system used in a manufacturing line of micro-components, which includes: a plurality of measurement devices that respectively perform measurement processing on a substrate; and a transfer system that transfers the substrate with the plurality of measurement devices; the plurality of measurement devices include a first measurement device that obtains position information of a plurality of marks formed on the substrate and a second measurement device that obtains position information of a plurality of marks formed on the substrate; it is possible to obtain position information of a plurality of marks formed on the substrate by the first measurement device under the setting of a first predetermined condition, and obtain position information of a plurality of marks formed on another substrate by the second measurement device under the setting of a second predetermined condition different from the first predetermined condition. According to a fourth aspect, there is provided a measurement system used in a manufacturing line of micro-components, which includes: a first measurement device that performs measurement processing on a substrate; and a second measurement device that performs measurement processing on a substrate, and can perform the measurement processing of the first measurement device and the measurement processing of the second measurement device in parallel. According to a fifth aspect, there is provided a measurement system used in a manufacturing line of micro-components, which includes: a first measurement device that performs measurement processing on a substrate; and a second measurement device that performs measurement processing on a substrate, and after the substrate is measured by one of the first measurement device and the second measurement device, the other can perform measurement processing on the substrate. According to a sixth aspect, there is provided a substrate processing system, which includes: a measurement system according to any one of the first to fifth aspects; and an exposure device having a substrate stage that mounts the substrate after the measurement of the position information of the plurality of marks is completed by at least one of the first measurement device and the second measurement device of the measurement system, and performs alignment measurement of obtaining position information of a selected part of the plurality of marks on the substrate mounted on the substrate stage and exposure of irradiating the substrate with an energy beam. According to the seventh aspect, a substrate processing system is provided, which includes: a first measurement system and a second measurement system respectively constituted by the measurement systems of any one of the first to fifth aspects; and an exposure device having a substrate stage that mounts the substrate after the position information of the plurality of marks has been measured by at least one of the first measurement device and the second measurement device of the first measurement system. For the substrate mounted on the substrate stage, alignment measurement for obtaining the position information of a selected part of the plurality of marks on the substrate and exposure of the substrate with an energy beam are performed; the acquisition of the position information of the plurality of marks by at least one of the first measurement device and the second measurement device included in the first measurement system is performed on a substrate that has been processed through at least one of washing, oxidation / diffusion, film formation, etching, ion implantation, and CMP and before a sensitizer is applied for the next exposure; the acquisition of the position information of the plurality of marks by at least one of the first measurement device and the second measurement device included in the second measurement system is performed on a substrate after exposure by the exposure device, after the development process, and before the etching process; the acquisition of the position information of the plurality of marks on different substrates by each of the first measurement system and the second measurement system is performed in parallel with the alignment measurement and exposure of different substrates by the exposure device. According to the eighth aspect, a component manufacturing method is provided, which includes: an operation of exposing a substrate using an exposure device that is a part of any one of the substrate processing systems of the sixth aspect and the seventh aspect; and an operation of developing the exposed substrate. Hereinafter, an embodiment will be described with reference to FIGS. 1 to 14. FIG. 1 shows a substrate processing system 1000 of an embodiment of a manufacturing line for micro components (such as semiconductor components) in a block diagram together with other devices used in the manufacturing line. As shown in FIG. 1, the substrate processing system 1000 includes an exposure device 200 and a coating / developing machine (resist coating / developing device) 300 that are connected to each other in an online manner. Further, the substrate processing system 1000 includes a measurement system 500 1 and a measurement system 500 2Hereinafter, the coating and developing machine 300 will be simply referred to as C / D 300. In addition, the term "connected in-line" means that different devices are connected to each other in such a way that the wafer (substrate) transfer path is substantially connected. In this specification, the terms "connected in-line" or "in-line connection" are used in this meaning. For example, when two different devices are connected in-line, a transfer mechanism such as a robot arm can be used to sequentially transfer the wafer (substrate) that has completed processing by one device to the other device. In addition, the case where different devices are connected through an interface part is sometimes also referred to as "in-line connection". Measurement system 500 1 , where three measurement devices 100 are arranged adjacent to each other in a predetermined direction within one chamber 502 (refer to FIGS. 2 and 3). 1 ~100 3 , and a measurement system control device 530 that overall manages the measurement system 500 1 and so on. Each of the measurement devices 100 1 ~100 1 has a control device 60 3 (i = 1 to 3), and each of the control devices 60 ｉ is connected to the measurement system control device 530 ｉ . In addition, the control device 60 1 (i = 1 to 3) may not be provided, and the measurement system control device 530 ｉ controls each of the measurement devices 100 1 ~100 1 . 3 Measurement system 500 2 , where three measurement devices 100 are arranged adjacent to each other in a predetermined direction within one chamber (not shown). 4 、100 5 、100 6 、and a measurement system control device 530 that overall manages the measurement system 500 ​2 The overall measurement system control device 530 2 and so on. The measuring device 100 4 、100 5 、100 6 respectively have control devices 60 4 、60 5 、60 6 ,and the control device 60 ｉ (i = 4 to 6) are each connected to the measurement system control device 530 2 . In addition, the control device 60 ｉ (i = 4 to 6) may not be provided, and the measurement system control device 530 2 controls each of the measuring devices 100 4 ~100 6 . The exposure device 200 and the C / D 300 included in the substrate processing system 1000 each have a chamber, and the chambers are arranged adjacent to each other. The exposure control device 220 of the exposure device 200, the coating and developing control device 320 of the C / D 300, the measurement system control device 530 1 、the measurement system control device 530 2 are connected to each other through a local area network (LAN) 1500. The LAN 1500 is also connected to a host computer (HOST) 2000 that manages the entire manufacturing line, and a group of devices that perform various program processes (program processes for the previous steps of the wafer process) under the management of the analysis device 3000 and the host computer 2000. In FIG. 1, the etching device 2100, the CMP device 2200, and the film forming devices such as the CVD device in this group of devices are representatively shown. In addition, a cleaning device, an oxidation / diffusion device, an ion implantation device, etc. are also connected to the LAN 1500. In addition, the substrate processing system 1000 may also include at least one of the host computer 2000, the analysis device 3000, the etching device 2100, the CMP device 2200, and the film forming device 2300. First, the measurement system will be described. Here, since the measurement system 500 1 and the measurement system 500 2 , although there are differences in whether the substrate to be measured is before or after exposure, since they have the same configuration and the same function, the measurement system 500 will be representatively described below 1 . FIG. 2 shows a perspective view of the appearance of the measurement system 500 1 . The measurement system 500 1 is separated from other devices constituting the substrate processing system 1000 and is installed on the floor F of the clean room. That is, the measurement system 500 1 is not connected to the exposure device 200 and the C / D 300 in-line. The measurement system 500 1 includes the three aforementioned measurement devices 100 1 ~100 3 disposed in the chamber 502 inside thereof and the carrier system 510 disposed on one side of the chamber 502. In this embodiment, the carrier system 510 is an EFEM (Equipment Front End Module) system. Hereinafter, the carrier system 510 will also be referred to as the EFEM system 510. In addition, as will be described later, although the carrier system 510 of this embodiment is for a FOUP (Front-Opening Unified Pod), it is not limited to a FOUP, and other types of carriers (such as a SMIF transfer box) capable of accommodating one or a plurality of wafers can also be operated in the carrier system 510. Hereinafter, the direction in which the chamber 502 and the EFEM system 510 are arranged will be used as the X-axis direction, the direction perpendicular to the X-axis in a plane parallel to the ground F will be used as the Y-axis direction, and the direction orthogonal to the X-axis and the Y-axis will be used as the Z-axis direction for description. As shown in FIG. 2, the chamber 502 has a rectangular parallelepiped shape, and in the first space inside thereof, the measurement devices 100 1 ~100 3 are arranged and accommodated in the X-axis direction as shown in FIG. 3. FIG. 3 is a top view of the measurement system 500 1 with the ceiling portion of the chamber 502 removed, and this FIG. 3 shows the measurement device 100 1 ~100 3 The chambers 101 respectively possessed ｉ (i = 1 to 3). In addition, the measuring device 100 1 ~100 3 Each of them may not have the chamber 101 ｉ . The measurement system 500 1 , Since a plurality of measuring devices 100 1 ~100 3 are arranged in the X-axis direction, it is possible to have a plurality of measuring devices 100 without increasing the width of the measurement system 500 in the Y-axis direction 1 ~100 1 ~100 3 . When setting up the measurement system 500 1 etc. in a factory, the passage for the operator extends in the Y-axis direction, and the above-mentioned devices for performing various processes (etching device 2100, CMP device 2200, etc.) are arranged along this passage. Therefore, in order to effectively utilize the floor F of the factory, it is important to suppress the width of the measurement system 500 in the Y-axis direction. 1 Also, a transfer system 521 capable of transferring wafers with each of the measuring devices 100 1 ~100 3 is arranged on the -Y side of the first space in the chamber 502. In addition, for the sake of convenience in explanation below, the space on the -Y side of the first space where the transfer system 521 is arranged is called the second space. In FIG. 2, the thick dashed line shows the virtual separation layer between the first space and the second space. An EFEM system 510 is disposed on the ground F adjacent to the -X side (front side) of the chamber 502. The EFEM system 510 includes an EFEM main body 512 with a robot for wafer transfer disposed therein and a modular machine installed at the loading port on the -X side (front side) of the EFEM main body 512. In the EFEM main body 512, a plurality of loading ports 514 (also referred to as carrier placement devices) for FOUPs arranged in the Y-axis direction are provided on its front side. In addition, in this embodiment, although the EFEM main body 512 has three loading ports 514, the number of loading ports is not limited to three, and may be one or two, or may be four or more. Here, the so-called FOUP is a carrier for wafer transfer / storage used in a semiconductor factory in a mini-environment mode defined by SEMI Standard E47.1, and is a front-opening cassette integrated transfer and storage box. In FIGS. 2 and 3, a FOUP 520 is disposed on each of the three loading ports 514, and at least one wafer to be measured is accommodated in the FOUP. Although not shown in the figure in this embodiment, a track for OHT (Overhead Hoist Transport) is provided near the ceiling of the clean room directly above the three loading ports 514. The so-called OHT is an unmanned transport vehicle traveling in the space at ceiling height, and through this OHT, the FOUP 520 is carried into the loading port 514. Each of the three loading ports 514 has a placement portion 515 and an opening / closing mechanism 518 (refer to FIG. 3) for opening and closing a cover for the FOUP 520 placed on the placement portion 515. The opening / closing mechanism 518 is provided at the front portion of the EFEM main body 512 facing the FOUP 520 placed on the placement portion 515 of the loading port 514, and can open and close the cover of the FOUP 520 while keeping the inside of the FOUP 520 airtight with respect to the outside. Since such an opening / closing mechanism is well-known, the description of the configuration and the like of the opening / closing mechanism 518 is omitted. Inside the EFEM main body 512, a robot 516 for wafer transfer (refer to FIG. 3) that can enter and exit the inside of the three FOUPs in a state where the cover is opened for the wafer to enter and exit is provided. In addition, an FFU (Fan Filter Unit, not shown) for maintaining the cleanliness inside the EFEM main body 512 may be provided on the upper part of the EFEM main body 512, and the temperature-controlled air from the air conditioner is sent to the inside of the EFEM main body 512 via the FFU. In addition, a buffer for stabilizing the temperature of the wafer using the temperature-controlled air from the air conditioner may be provided inside the EFEM main body 512. An opening is formed in a portion on the back side of the EFEM body 512 facing the second space of the chamber 502, and the opening is opened and closed by an opening / closing member. Each component (such as the robot 516 and the opening / closing mechanism 518) of the EFEM system 510 is controlled by the measurement system control device 530 1 (refer to FIG. 1). Inside the second space of the chamber 502, a transfer system 521 is provided as shown in FIG. 3. Also provided are: guides 522A and 522B, which are respectively arranged on one side and the other side in the Y-axis direction within the second space, and extend in the X-axis direction covering substantially the entire length of the chamber 502; a loading transfer member 524 capable of reciprocating along the guide 522A, and an unloading transfer member 526 capable of reciprocating along the guide 522B. The loading transfer member 524 can move along the guide 522A by a linear motor having a fixed member housed in the guide 522A and a movable member provided on the transfer member 524 (the linear motor is labeled as linear motor 522A using the same symbol as the guide housing the fixed member). Also, the unloading transfer member 526 can move along the guide 522B by a linear motor having a fixed member housed in the guide 522B and a movable member provided on the transfer member 526 (the linear motor is labeled as linear motor 522B using the same symbol as the guide housing the fixed member). The linear motors 522A and 522B are controlled by the measurement system control device 530 1 control. In addition, the transfer members 524 and 526 can also move in a non-contact manner using an air slider or the like. Also, the drive mechanism for moving the transfer members 524 and 526 is not limited to the above-mentioned linear motors (522A, 522B), and can also be a configuration using a rotary motor and a ball screw mechanism. The guide 522A is arranged at a position higher than the guide 522B. Therefore, the loading transfer member 524 moves in the space above the unloading transfer member 526. In addition, in the above-mentioned transfer system 521, the transfer member 524 and the guide 522A can also be used for wafer loading and unloading, and the transfer member 526 and the guide 522B can be used for wafer loading and unloading. Also, although the above-mentioned transfer system 521 can transfer wafers with each of a plurality of measurement devices 100 1 ~100 3 The transfer system 521 can also have a transfer device (including a guide and a transfer member) that transfers wafers only with the measurement device 100 1 for wafer transfer, and a transfer device (including a guide and a transfer member) that transfers wafers only with the measurement device 100 2 A transfer device (including a guide and a transfer member) for transferring wafers, only related to the measuring device 100 3 A transfer device (including a guide and a transfer member) for transferring wafers. In this case, each of the transfer devices may also have a loading guide and a transfer member, as well as an unloading guide and a transfer member, and may also have a guide and a transfer member that serve both for loading and unloading. As shown in FIG. 3, in the measuring device 100 ｉ (i = 1 to 3), a wafer transfer system 70 is provided with an articulated robot that transfers wafers between the transfer member 524 and the transfer member 526 ｉ (i = 1 to 3). The wafer transfer system 70 ｉ (i = 1 to 3) transfers wafers between the transfer member 524 and the transfer member 526 through the opening of the chamber 101 ｉ The transfer member 524 receives the wafer to be measured in the FOUP 520 from the robot 516 at the wafer transfer position (loading-side wafer transfer position) set near the boundary between the EFEM body 512 and the chamber 502, and transfers it to the wafer transfer system 70 ｉ (any one of i = 1 to 3) at the wafer transfer position with the measuring device 100 ｉ of. The wafer to be measured by the measuring device 100 ｉ (i = 1 to 3) is, in this embodiment, a wafer after at least the exposure of the first layer is completed and then the development is completed, and after the necessary processing in the previous steps of the wafer processes such as etching, oxidation / diffusion, film formation, ion implantation, and planarization (CMP), and is a wafer carried into the C / D 300 for coating the resist. In addition, for the same wafer, when measuring with at least two of the measuring devices 100 1 to 100 3 When measuring, the loading transfer member 524 receives from the wafer transfer system 70 ｉ (any one of i = 1 to 3) and receives it with another measuring device 100 ｉAfter the measurement of the wafer to be processed (where i = any one of 1 to 3) is completed, the wafer is transferred to the wafer transfer system 70 ｊ (where j = any one of 1 to 3, j ≠ i) to the wafer transfer position of the measuring device 100 ｊ of the wafer. The transfer member 526 receives the wafer that has completed the measurement from the wafer transfer system 70 ｉ and transfers it (where i = any one of 1 to 3) to the unloading-side wafer transfer position set near the boundary between the EFEM body 512 and the chamber 502 (a position below the aforementioned loading-side wafer transfer position). The robot 516 loads (returns) the wafer that has completed the measurement process and has been transferred to the unloading-side wafer transfer position by the transfer member 526 into the FOUP 520. Returning to FIG. 1, as the measuring device 100 1 to 100 3 each uses a measuring device with the same configuration in this embodiment. In addition, in this embodiment, although it is exemplified that the transfer system 521 for transferring the wafer to and from the measuring device 100 ｉ by the transfer member 524, the transfer member 526, etc. is arranged in the second space of the chamber 502, and the space for transferring the wafer by the transfer member 524 and the transfer member 526 becomes an airtight space, this is not limited thereto. Three measuring devices 100 1 to 100 3 can also be arranged side by side on the floor F, and another chamber with an airtight chamber formed inside and accommodating the transfer system 521 is provided in these measuring devices 100 1 to 100 3 (regardless of whether they are accommodated in the same chamber). That is, the measurement system 500 1 may not include the chamber 502. Furthermore, instead of the transfer members 524 and 526, an articulated robot that can move back and forth along the guide can be used. In this case, the wafer transfer system 70 ｉ may not include the articulated robot, as long as it has a loading wafer holding part and an unloading wafer holding part for transferring the wafer with the articulated robot of the transfer system 521. Further, when using an articulated robot instead of the transfer members 524 and 526, the EFEM system 510 may not include the robot 516. In this case, the articulated robot of the transfer system 521 can also take out the wafer from the FOUP 520 or return the wafer to the FOUP 520. Here, the measuring device 100 will be described in detail. ｉ FIG. 4 schematically shows the measuring device 100 in a perspective view. ｉ The configuration of the measuring device 100 shown in FIG. 4 is also shown. ｉ In fact, the measuring device 100 is composed of the aforementioned chamber 101 ｉ and the components housed inside the chamber 101. ｉ However, the description related to the chamber 101 will be omitted below. The measuring device 100 of the present embodiment ｉ is provided with a mark detection system MDS as described later. Hereinafter, the direction of the optical axis AX1 of the mark detection system MDS is set to be the same as the aforementioned Z-axis direction, the direction in which the movable stage described later moves in a long stroke in the XY plane orthogonal thereto is set to be the same as the aforementioned Y-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are set to the θx, θy, and θz directions, respectively, and the description will be made accordingly. Here, in the mark detection system MDS, a cylindrical lens barrel portion 41 is provided at its lower end (front end). Inside the lens barrel portion 41, an optical system (refractive optical system) composed of a plurality of lens elements having a common optical axis AX1 in the Z-axis direction is housed. In this specification, for convenience of explanation, the optical axis AX1 of the refractive optical system inside the lens barrel portion 41 is referred to as the optical axis AX1 of the mark detection system MDS. ｉ FIG. 5(A) shows a partial front view (viewed from the -Y direction) of the measuring device 100 in FIG. 4 with a part omitted. FIG. 5(B) shows a partial sectional view of the measuring device 100 taken along the XZ plane passing through the optical axis AX1 with a part omitted. Further, FIG. 6 shows a partial sectional view of the measuring device 100 taken along the YZ plane of the optical axis AX1 with a part omitted. FIG. 5(A) shows a partial front view (viewed from the -Y direction) of the measuring device 100 in FIG. 4 with a part omitted. FIG. 5(B) shows a partial sectional view of the measuring device 100 taken along the XZ plane passing through the optical axis AX1 with a part omitted. FIG. 6 shows a partial sectional view of the measuring device 100 taken along the YZ plane of the optical axis AX1 with a part omitted. ｉ FIG. 5(B) shows a partial sectional view of the measuring device 100 taken along the XZ plane passing through the optical axis AX1 with a part omitted. FIG. 6 shows a partial sectional view of the measuring device 100 taken along the YZ plane of the optical axis AX1 with a part omitted. ｉ FIG. 6 shows a partial sectional view of the measuring device 100 taken along the YZ plane of the optical axis AX1 with a part omitted. ｉ FIG. 6 shows a partial sectional view of the measuring device 100 taken along the YZ plane of the optical axis AX1 with a part omitted. The measuring device 100 ｉAs shown in FIG. 4, it includes: a surface plate 12 having an upper surface substantially parallel to the XY plane orthogonal to the optical axis AX1; a wafer slider (hereinafter simply referred to as a slider) 10 disposed on the surface plate 12, capable of holding the wafer W and moving relative to the surface plate 12 in the X-axis and Y-axis directions with a predetermined stroke, and capable of slightly moving (slightly displacing) in the Z-axis, θx, θy, and θz directions; a drive system 20 (refer to FIG. 8) for driving the slider 10; a first position measurement system 30 (not shown in FIG. 4, refer to FIGS. 6 and 8) for measuring the position information of the slider 10 relative to the surface plate 12 in each of the X-axis, Y-axis, Z-axis, θx, θy, and θz directions (hereinafter referred to as six-degree-of-freedom directions); a measurement unit 40 having a mark detection system MDS for detecting marks on the wafer W mounted (held) on the slider 10; a second position measurement system 50 (refer to FIG. 8) for measuring the relative position information between the mark detection system MDS (measurement unit 40) and the surface plate 12; and a control device 60 ｉ (not shown in FIG. 4, refer to FIG. 8), while controlling the drive of the drive system 20 for the slider 10, acquiring the measurement information of the first position measurement system 30 and the measurement information of the second position measurement system 50, and using the mark detection system MDS to obtain the position information of a plurality of marks on the wafer W held on the slider 10. The surface plate 12 is composed of a rectangular parallelepiped member with a rectangular (or square) top view, and its upper surface flatness is made very high, forming a guiding surface when the slider 10 moves. As the material of the surface plate 12, a material with a low coefficient of thermal expansion, also known as a zero-expansion material, is used, such as an invar-type alloy, an extremely low-expansion cast steel, or an extremely low-expansion glass ceramic, etc. On the surface plate 12, there is one place at the central part in the X-axis direction on the -Y side surface and one place at each of the two end parts in the X-axis direction on the +Y side surface, forming a total of three notch-shaped spaces 12a with bottom openings. In FIG. 4, the space 12a formed on the -Y side surface among the three spaces 12a is shown. Inside each space 12a, a vibration damping device 14 is arranged. The surface plate 12 is three-point supported by three vibration damping devices 14 on the upper surface of a rectangular base frame 16 placed on the ground F in a manner that the upper surface is substantially parallel to the XY plane. In addition, the number of vibration damping devices 14 is not limited to three. As shown in Fig. 6, the slider 10 has one air static pressure bearing (air bearing) 18 (a total of four) installed at each of the four corners of the bottom surface in a state where the respective bearing surfaces are substantially flush with the lower surface of the slider 10. The slider 10 is suspended and supported on the upper surface of the surface plate 12 with a predetermined gap (void, clearance), such as a gap of about several μm, by the static pressure (gap internal pressure) between the bearing surfaces of the pressurized air ejected from these four air bearings 18 toward the surface plate 12 and the upper surface (guide surface) of the surface plate 12. In the present embodiment, the slider 10 is made of zero-expansion glass, which is a kind of zero-expansion material (for example, Zerodur of Schott Co., Ltd.). A recess 10a having a predetermined depth and a circular shape in plan view with an inner diameter slightly larger than the diameter of the wafer W is formed in the upper part of the slider 10. A wafer holder WH having a diameter substantially the same as the diameter of the wafer W is disposed inside the recess 10a. As the wafer holder WH, a vacuum chuck, an electrostatic chuck, a mechanical chuck, or the like can be used. For example, a vacuum chuck using a pin chuck method is used. The wafer W is adsorbed and held by the wafer holder WH in a state where its upper surface is substantially flush with the upper surface of the slider 10. A plurality of suction ports are formed in the wafer holder WH, and the plurality of suction ports are connected to a vacuum pump 11 (see Fig. 8) via a vacuum piping system (not shown). Further, the ON / OFF, etc. of the vacuum pump 11 are controlled by a control device 60 ｉ control. In addition, either one or both of the slider 10 and the wafer holder WH may be referred to as the "first substrate holding member". Further, the slider 10 is provided with an up-and-down moving member (not shown) that moves up and down through, for example, three circular openings formed in the wafer holder WH and cooperates with the wafer transfer system 70 ｉ (not shown in Fig. 4, see Fig. 8) to load the wafer onto the wafer holder WH and unload the wafer from the wafer holder WH. The driving device 13 for driving the up-and-down moving member is controlled by the control device 60 ｉ control (see Fig. 8). In the present embodiment, the wafer holder WH used is, for example, sized to be able to adsorb and hold a 300-mm wafer with a diameter of 300 mm. In addition, when the wafer transfer system 70 ｉ has a non-contact holding member, such as a Bernoulli chuck, that attracts and holds the wafer on the wafer holder WH in a non-contact manner from above, there is no need to provide an up-and-down moving member on the slider 10, nor is it necessary to form circular openings for the up-and-down moving member in the wafer holder WH. As shown in FIGS. 5(B) and 6, a two-dimensional grating (hereinafter simply referred to as a grating) RG1 is horizontally disposed (parallel to the surface of the wafer W) in an area one circle larger than the wafer W below the slider 10. The grating RG1 includes a reflective diffraction grating (X diffraction grating) having the X-axis direction as the periodic direction and a reflective diffraction grating (Y diffraction grating) having the Y-axis direction as the periodic direction. The pitch of the grating lines of the X diffraction grating and the Y diffraction grating is set to, for example, 1 μm. The vibration isolation device 14 is an active vibration isolation system (so-called AVIS (Active Vibration Isolation System)), and includes an accelerometer, a displacement sensor (such as a capacitance sensor, etc.), an actuator (such as a voice coil motor, etc.), and an air mount that functions as an air damper, etc. The vibration isolation device 14 can attenuate higher-frequency vibrations by means of the air mount (air damper), and can perform vibration isolation (vibration control) by means of the actuator. Therefore, the vibration isolation device 14 can prevent vibration transmission between the surface plate 12 and the base frame 16. In addition, a hydraulic damper can be used instead of the air mount (air damper). Here, the reason for providing the actuator in addition to the air mount is that the internal pressure of the gas in the gas chamber of the air mount is high, so the control response can only be ensured at around 20 Hz. Therefore, when high-response control is required, it is necessary to control the actuator in response to the output of an accelerometer (not shown), etc. However, micro-vibrations such as ground vibrations can be removed by the air mount. The upper end surface of the vibration isolation device 14 is connected to the surface plate 12. For the air mount, gas (such as compressed air) can be supplied through a gas supply port (not shown). The air mount expands and contracts in the Z-axis direction by a predetermined stroke (such as about 1 mm) in response to the amount of gas filled therein (pressure change of compressed air). Therefore, by individually moving up and down three locations of the surface plate 12 from below using the air mounts each provided in the three vibration isolation devices 14, the positions of the surface plate 12 and the slider 10 suspended thereon in the Z-axis direction, θx direction, and θy direction can be arbitrarily adjusted. Also, the actuator of the vibration isolation device 14 can drive the surface plate 12 not only in the Z-axis direction but also in the X-axis direction and the Y-axis direction. In addition, the driving amounts in the X-axis direction and the Y-axis direction are smaller than the driving amount in the Z-axis direction. The three vibration isolation devices 14 are connected to the control device 60 ｉ (refer to FIG. 8). In addition, each of the three vibration isolation devices 14 may be provided with an actuator that can move the surface plate 12 not only in the X-axis direction, Y-axis direction, and Z-axis direction but also in, for example, six degrees of freedom directions. The control device 60 ｉ, based on the relative position information between the marking detection system MDS (measurement unit 40) measured by the second position measurement system 50 and the surface plate 12, the surface plate 12 with the head 32 of the first position measurement system 30 to be described later fixed thereon is maintained in the desired positional relationship relative to the marking detection system MDS in the six-degree-of-freedom direction, and the actuators of the three vibration isolation devices 14 are controlled in real time at any time. In addition, feedforward control can also be performed on each of the three vibration isolation devices 14. For example, the control device 60 ｉ can also perform feedforward control on each of the three vibration isolation devices 14 according to the measurement information of the first position measurement system 30. In addition, regarding the control device 60 ｉ The control of the vibration isolation device 14 will be further described later. As shown in FIG. 8, the drive system 20 includes a first drive device 20A that drives the slider 10 in the X-axis direction and a second drive device 20B that integrally drives the slider 10 and the first drive device 20A in the Y-axis direction. As can be seen from FIGS. 4 and 6, on the -Y side surface of the slider 10, a pair of movable members 22a formed of a magnet unit (or a coil unit) and having an inverted L-shaped side view are fixed at a predetermined interval in the X-axis direction. On the +Y side surface of the slider 10, as shown in FIG. 6, a pair of movable members 22b formed of a magnet unit (or a coil unit) are fixed at a predetermined interval in the X-axis direction (however, the movable member 22b on the +X side is not shown). The pair of movable members 22a and the pair of movable members 22b are arranged symmetrically left and right, but are configured identically to each other. The movable members 22a, 22b are supported in a non-contact manner as shown in FIGS. 4 to 6 on the upper surfaces substantially parallel to the XY plane of a pair of plate members 24a, 24b that form a part of the movable stage 24 having a rectangular frame shape in plan view and are arranged at a predetermined distance apart in the Y-axis direction and extend in the X-axis direction respectively. That is, air bearings (not shown) are respectively provided on the lower surfaces of the movable members 22a, 22b (the surfaces facing the plate members 24a, 24b respectively), and the movable members 22a, 22b are supported in a non-contact manner from below by the movable stage 24 by the suspension buoyancy (static pressure of pressurized air) generated by these air bearings on the plate members 24a, 24b. In addition, as described above, the self-weight of the slider 10 on which a pair of movable members 22a, 22b are fixed is supported by the suspension buoyancy generated on the surface plate 12 by the four air bearings 18. On the upper surfaces of the pair of plate members 24a, 24b respectively, as shown in FIGS. 4 to 6, fixed members 26a, 26b formed of a coil unit (or a magnet unit) are arranged in areas other than the two end portions in the X-axis direction. By the electromagnetic interaction between a pair of movable members 22a and a fixed member 26a, a driving force (electromagnetic force) for driving the pair of movable members 22a in the X-axis direction and a driving force (electromagnetic force) for driving in the Y-axis direction are generated. By the electromagnetic interaction between a pair of movable members 22b and a fixed member 26b, a driving force (electromagnetic force) for driving the pair of movable members 22b in the X-axis direction and a driving force (electromagnetic force) for driving in the Y-axis direction are generated. That is, by a pair of movable members 22a and a fixed member 26a, an XY linear motor 28A that generates driving forces in the X-axis direction and the Y-axis direction is constituted. By a pair of movable members 22b and a fixed member 26b, an XY linear motor 28B that generates driving forces in the X-axis direction and the Y-axis direction is constituted. By the XY linear motor 28A and the XY linear motor 28B, a first driving device 20A that drives the slider 10 in the X-axis direction by a predetermined stroke and drives it slightly in the Y-axis direction is constituted (refer to FIG. 8). The first driving device 20A can drive the slider 10 in the θz direction by making the magnitudes of the driving forces in the X-axis direction generated by the XY linear motor 28A and the XY linear motor 28B different. The first driving device 20A is controlled by the control device 60 ｉ Control (refer to FIG. 8). In this embodiment, together with a second driving device described later, the first driving device 20A constitutes a coarse and fine driving system for driving the slider 10 in the Y-axis direction. Based on this relationship, although the first driving device 20A generates not only a driving force in the X-axis direction but also a driving force in the Y-axis direction, the first driving device 20A does not necessarily have to generate a driving force in the Y-axis direction. The movable stage 24 has: a pair of plate members 24a, 24b, and a pair of connecting members 24c, 24d that are arranged at a predetermined distance apart in the X-axis direction and extend in the Y-axis direction respectively. Step portions are formed at both ends in the Y-axis direction of the connecting members 24c, 24d. Also, with one end and the other end in the length direction of the plate member 24a placed on the -Y side step portions of the connecting members 24c, 24d respectively, the connecting members 24c, 24d and the plate member 24a are integrated. Also, with one end and the other end in the length direction of the plate member 24b placed on the +Y side step portions of the connecting members 24c, 24d respectively, the connecting members 24c, 24d and the plate member 24b are integrated (refer to FIG. 5(B)). That is, in this way, a pair of plate members 24a, 24b are connected by a pair of connecting members 24c, 24d to constitute a rectangular frame-shaped movable stage 24. As shown in FIGS. 4 and 5(A), near both ends in the X-axis direction on the upper surface of the base frame 16, a pair of linear guides 27a and 27b extending in the Y-axis direction are fixed. Inside one of the linear guides 27a on the +X side, a fixed member 25a of the Y-axis linear motor 29A (see FIG. 5(B)) composed of a coil unit (or magnet unit) covering substantially the entire length in the Y-axis direction is accommodated near the upper surface and the -X side surface. Opposite to the upper surface and the -X side surface of the linear guide 27a, a movable member 23a of the Y-axis linear motor 29A is arranged, which is composed of a magnet unit (or coil unit) with an L-shaped cross section and together with the fixed member 25a forms the Y-axis linear motor 29A. On the lower surface and the +X side surface of the movable member 23a respectively facing the upper surface and the -X side surface of the linear guide 27a, air bearings for ejecting pressurized air to the opposite surfaces are respectively fixed. Among them, in particular, as the air bearing fixed to the +X side surface of the movable member 23a, a vacuum preloading type air bearing is used. This vacuum preloading type air bearing maintains a constant value of the gap (void, clearance) in the X-axis direction between the movable member 23a and the linear guide 27a by the balance of the static pressure of the pressurized air and the vacuum preloading force between the bearing surface and the -X side surface of the linear guide 27a. On the upper surface of the movable member 23a, a plurality of, for example, two rectangular parallelepiped members constituting X guides 19 are fixed at predetermined intervals in the Y-axis direction. To each of the two X guides 19, a sliding member 21 with an inverted U-shaped cross section that together with the X guide 19 forms a single-axis guiding device is engaged in a non-contact manner. Air bearings are respectively provided on the three surfaces of the sliding member 21 facing the X guide 19. As shown in FIG. 4, the two sliding members 21 are respectively fixed to the lower surface (-Z side surface) of the connecting member 24c. The other linear guide 27b on the -X side is symmetric left and right in that a fixed member 25b of the Y-axis linear motor 29B composed of a coil unit (or magnet unit) is accommodated inside, but has the same structure as the linear guide 27a (see FIG. 5(B)). Opposite to the upper surface and the +X side surface of the linear guide 27b, a movable member 23b is arranged, which is symmetric left and right but is composed of a magnet unit (or coil unit) with the same L-shaped cross section as the movable member 23a and together with the fixed member 25b forms the Y-axis linear motor 29B. Opposite to the upper surface and the +X side surface of the linear guide 27b respectively, air bearings are respectively fixed to the lower surface and the -X side surface of the movable member 23b. In particular, as the air bearing fixed to the -X side surface of the movable member 23b, a vacuum preloading type air bearing is used. By this vacuum preloading type air bearing, the gap (void, clearance) in the X-axis direction between the movable member 23b and the linear guide 27b is maintained at a constant value. Between the upper surface of the movable member 23b and the bottom surface of the connecting member 24d, similarly to the above, two single-axis guiding devices each composed of an X guide 19 and a sliding member 21 that non-contact engages with the X guide 19 are provided. The movable stage 24 is supported from below by the movable members 23a and 23b through two single-axis guiding devices on each of the +X side and the -X side (a total of four), and can move in the X-axis direction on the movable members 23a and 23b. Therefore, when the slider 10 is driven in the X-axis direction by the aforementioned first driving device 20A, the reaction force of the driving force acts on the movable stage 24 provided with the fixed members 26a and 26b, and the movable stage 24 moves in the direction opposite to the slider 10 in accordance with the law of conservation of momentum. That is, the generation of vibration caused by the reaction force of the driving force in the X-axis direction with respect to the slider 10 is prevented (or effectively suppressed) by the movement of the movable stage 24. That is, the movable stage 24 functions as a counter mass when the slider 10 moves in the X-axis direction. However, it is not necessary to make the movable stage 24 function as a counter mass. In addition, since the slider 10 only moves slightly in the Y-axis direction relative to the movable stage 24, it does not need to be specially provided, but a counter mass can also be provided to prevent (or effectively suppress) the generation of vibration caused by the driving force for driving the slider 10 in the Y-axis direction relative to the movable stage 24. The Y-axis linear motor 29A generates a driving force (electromagnetic force) for driving the movable member 23a in the Y-axis direction through the electromagnetic interaction between the movable member 23a and the fixed member 25a, and the Y-axis linear motor 29B generates a driving force (electromagnetic force) for driving the movable member 23b in the Y-axis direction through the electromagnetic interaction between the movable member 23b and the fixed member 25b. The driving force in the Y-axis direction generated by the Y-axis linear motors 29A and 29B acts on the movable stage 24 through two single-axis guiding devices on each of the +X side and the -X side. Thereby, the slider 10 is driven in the Y-axis direction integrally with the movable stage 24. That is, in the present embodiment, the second driving device 20B for driving the slider 10 in the Y-axis direction is constituted by the movable stage 24, four single-axis guiding devices, and a pair of Y-axis linear motors 29A and 29B (refer to FIG. 8). In the present embodiment, the pair of Y-axis linear motors 29A and 29B are physically separated from the fixed plate 12 and are also vibrationally separated by three vibration isolation devices 14. In addition, a configuration can be made such that the linear guides 27a and 27b of the fixed members 25a and 25b respectively provided with the pair of Y-axis linear motors 29A and 29B can move in the Y-axis direction relative to the base frame 16, and function as a counter mass when the slider 10 is driven in the Y-axis direction. As shown in FIG. 4, the measuring unit 40 includes a unit body 42 having a notch-shaped space 42a with an opening at the bottom on the -Y side, the aforementioned mark detection system MDS connected to the unit body 42 in a state where the base end portion is inserted into the space 42a, and a connection mechanism 43 connecting the lens barrel portion 41 at the front end of the mark detection system MDS to the unit body 42. The connection mechanism 43 includes a support plate 44 that supports the lens barrel portion 41 on the back side (+Y side) through a mounting member (not shown), and a pair of support arms 45a, 45b that support one end of the support plate 44 and fix the other end to the bottom surface of the unit body 42. In this embodiment, the FIA (Field Image Alignment) system using an image processing method is used as the mark detection system MDS. It irradiates a broadband detection beam generated by an illumination source such as a halogen lamp onto the target mark, and uses a photographic element (such as a CCD) to photograph the image of the target mark formed on the light-receiving surface by the reflected light from the target mark and the image of an index (index pattern on an index plate provided inside) (not shown), and outputs the photographic signals thereof. The photographic signals from the mark detection system MDS are supplied to the control device 60 through a signal processing device 49 (not shown in FIG. 4, refer to FIG. 8) ｉ (refer to FIG. 8). The measuring device 100 ｉ can switch (select) and set the measurement conditions (also called alignment measurement conditions) of the mark using the mark detection system MDS. The switched (selected) and set alignment measurement conditions include the irradiation conditions for irradiating the detection light onto the mark to be detected, the light-receiving conditions for receiving the light generated from the mark, and the signal processing conditions for processing the photoelectric conversion signal obtained by receiving the light generated from the mark. The irradiation conditions and the light-receiving conditions are switched and set through the mark detection system MDS by the control device 60 ｉ and the signal processing conditions are switched and set through the signal processing device 49 by the control device 60 ｉ and are switched and set. The switched and set irradiation conditions include at least one of the wavelength, light quantity, and NA or σ of the optical system of the detection light irradiated onto the mark from the optical system included in the mark detection system MDS. Also, the switched and set light-receiving conditions include at least one of the number of diffraction lights generated from the mark and the wavelength of the light generated from the aforementioned mark. For example, the wavelength of the detection light (illumination light) can be selected by selectively setting the filter used in the wavelength selection mechanism of the marker detection system MDS on the optical path of the illumination light from the illumination light source. Further, by controlling the settings or diaphragm states of the illumination field diaphragm, illumination aperture diaphragm, and imaging aperture diaphragm (for example, also including an imaging aperture diaphragm having a light-shielding portion with an annular light-shielding shape used in combination with an annular illumination aperture diaphragm) of the marker detection system MDS, the illumination conditions (normal illumination / deformed illumination) or dark field / bright field detection methods, the numerical aperture N.A., σ, and illumination light amount of the optical system can be set and controlled. Further, the signal processing conditions to be switched and set include at least one of the selection of waveform analysis (waveform processing) arithmetic expressions used in the signal processing device 49, the selection of signal processing arithmetic expressions such as EGA calculation modules, and the selection of various parameters used in each selected signal processing arithmetic expression. Regarding such an FIA system capable of switching (selecting) and setting alignment measurement conditions, it is disclosed in, for example, the specification of U.S. Patent Application Publication No. 2008 / 0013073, etc. The marker detection system MDS of the present embodiment can also adopt an FIA system having the same configuration. In addition, the above-mentioned U.S. Patent Application Publication also discloses that the illumination aperture diaphragm is changed from an illumination aperture diaphragm having a normal circular transmission portion to an illumination aperture diaphragm having an annular transmission portion, and further, a phase difference plate is disposed at a position close to the imaging aperture diaphragm at the rear stage of the imaging aperture diaphragm, so that the FIA system (alignment sensor) functions as a phase difference microscope type sensor, thereby imparting a predetermined phase difference to the diffracted light of a predetermined number of times generated from the marker as one of the light receiving conditions. In the present embodiment, the marker detection system MDS also has an alignment autofocus function for adjusting the focal position of the optical system. Returning to the description of FIG. 4, a reader head mounting member 51 having a substantially isosceles triangle shape is disposed between the lens barrel portion 41 and the support plate 44. An opening penetrating in the Y-axis direction of FIG. 4 is formed in the reader head mounting member 51, and the lens barrel portion 41 is mounted (fixed to) the support plate 44 through a mounting member (not shown) inserted into this opening. Further, the back surface of the reader head mounting member 51 is fixed to the support plate 44. In this way, the lens barrel portion 41 (marker detection system MDS), the reader head mounting member 51, and the support plate 44 are integrated with the unit body 42 through a pair of support arms 45a, 45b. Inside the unit body 42, a photographing signal output as a detection signal from the marker detection system MDS is processed to calculate the position information of the target marker relative to the detection center, and is output to the control device 60 ｉThe aforementioned signal processing device 49 and the like. The unit body 42 is supported at three points from below by a plurality of, for example, three vibration isolation devices 48 on a support frame 46 that is gate-shaped when viewed from the -Y side and is provided on the base frame 16. Each vibration isolation device 48 is an active vibration isolation system (so-called AVIS (Active Vibration Isolation System)), and includes an accelerometer, a displacement sensor (such as a capacitance sensor, etc.), an actuator (such as a voice coil motor, etc.), and a mechanical damper such as an air damper or a hydraulic damper. Each vibration isolation device 48 can attenuate higher-frequency vibrations by means of a mechanical damper and can perform vibration isolation (vibration damping) by means of an actuator. Therefore, each vibration isolation device 48 can prevent higher-frequency vibrations from being transmitted between the support frame 46 and the unit body 42. In addition, as the mark detection system MDS, it is not limited to the FIA system. Instead of the FIA system, for example, a diffracted light interference type alignment detection system that irradiates coherent detection light on an object mark, causes two diffracted lights (such as diffracted lights of the same order or diffracted lights diffracted in the same direction) generated from the object mark to interfere and detects them to output a detection signal can also be used. Alternatively, a diffracted light interference type alignment system and the FIA system can also be used together to detect two object marks simultaneously. Furthermore, as the mark detection system MDS, a beam scanning type alignment system that scans measurement light in a predetermined direction on an object mark during the period when the slider 10 moves in a predetermined direction can also be used. Also, in this embodiment, although the mark detection system MDS has an alignment autofocus function, it can be replaced by this, or further, the measurement unit 40 includes a focus position detection system and an oblique incidence type multi-point focus position detection system having the same configuration as that disclosed in, for example, the specification of U.S. Patent No. 5,448,332. As shown in FIGS. 5(B) and 6, the first position measurement system 30 has a read head 32 that is disposed in a recess formed on the upper surface of the stage 12 and is fixed to the stage 12. The upper surface of the read head 32 faces the lower surface of the slider 10 (the formation surface of the grating RG1). A predetermined gap (void, clearance), for example, a gap of about several mm, is formed between the upper surface of the read head 32 and the lower surface of the slider 10. The first position measurement system 30, as shown in FIG. 8, includes an encoder system 33 and a laser interferometer system 35. The encoder system 33 irradiates a plurality of beams from a reading head 32 onto a measurement portion (the formation surface of the grating RG1) on the lower surface of the slider 10, and receives a plurality of return beams (for example, a plurality of diffracted beams from the grating RG1) from the measurement portion on the lower surface of the slider 10, and can obtain the position information of the slider 10. The encoder system 33 includes an X linear encoder 33x that measures the position of the slider 10 in the X-axis direction, and a pair of Y linear encoders 33ya, 33yb that measure the position of the slider 10 in the Y-axis direction. The encoder system 33 uses a diffraction interference type reading head having the same configuration as the reading head (hereinafter appropriately abbreviated as the reading head) disclosed in, for example, the specification of US Patent Application Publication No. 2007 / 288121. In addition, although the reading head includes a light source and a light receiving system (including a photodetector) and an optical system, in this embodiment, as long as at least the optical system among these is disposed inside the housing of the reading head 32 facing the grating RG1, at least one of the light source and the light receiving system may also be disposed outside the housing of the reading head 32. In this embodiment, the first position measurement system 30 (encoder system 33) has a common detection point for measuring the position information of the slider 10 in the X-axis direction and the Y-axis direction. The position of this detection point in the XY plane is made to coincide with the detection center of the mark detection system MDS at, for example, the nm level, by the control device 60 ｉ , and controls the actuators of the three vibration isolation devices 14 in real time. The control of the actuators of the three vibration isolation devices 14 is performed based on the relative position information of the mark detection system MDS (measurement unit 40) measured by the second position measurement system 50 and the surface plate 12. Therefore, in this embodiment, the control device 60 ｉ , by using the encoder system 33, when measuring the alignment mark on the wafer W placed on the slider 10, it can measure the position information of the slider 10 in the XY plane directly below the detection center of the mark detection system MDS (on the back side of the slider 10) at any time. Also, the control device 60 ｉ measures the rotation amount of the slider 10 in the θz direction based on the difference between the measurement values of the pair of Y linear encoders 33ya, 33yb. The laser interferometer system 35 projects the distance measurement beam onto the measurement section (the surface formed with the grating RG1) under the slider 10, and receives the returned beam (for example, the reflected light from the surface formed with the grating RG1) to obtain the position information of the slider 10. The laser interferometer system 35 projects, for example, four distance measurement beams onto the lower surface (the surface formed with the grating RG1) of the slider 10. The laser interferometer system 35 includes laser interferometers 35a to 35d (refer to FIG. 8) that irradiate each of these four distance measurement beams. In this embodiment, four Z-read heads are constituted by the laser interferometers 35a to 35d. In addition, the distance measurement beams from each of the laser interferometers 35a to 35d are irradiated onto the respective vertex positions of a square having two sides parallel to the X-axis and two sides parallel to the Y-axis, with the detection points of the encoder system 33 as the center, on the lower surface (the surface formed with the grating RG1) of the slider 10. In this embodiment, the surface formed with the grating RG1 also serves as the reflection surface for each distance measurement beam from the laser interferometer system 35. The control device 60 ｉ , uses the laser interferometer system 35 to measure the position information of the slider 10 in the Z-axis direction, the rotation amounts in the θx direction and the θy direction. In addition, it can be clearly understood from the above description that although the slider 10 is not actively driven relative to the surface plate 12 in the Z-axis, θx, and θy directions by the aforementioned drive system 20, since it is suspended and supported on the surface plate 12 by four air bearings 18 arranged at the four corners of the bottom surface, in fact, the position of the slider 10 changes in the Z-axis, θx, and θy directions on the surface plate 12. That is, the slider 10 can actually move relative to the surface plate 12 in the Z-axis, θx, and θy directions. In particular, the displacements of the slider 10 in the θx and θy directions will cause measurement errors (Abbe errors) in the encoder system 33. Considering this point, the first position measurement system 30 (laser interferometer system 35) is used to measure the position information of the slider 10 in the Z-axis, θx, and θy directions. In addition, in order to measure the position information of the slider 10 in the Z-axis direction, the rotation amounts in the θx direction and the θy direction, since it is sufficient to project the beam onto three different points on the surface formed with the grating RG1, three Z-read heads, such as laser interferometers, are sufficient. In addition, a protective glass for protecting the grating RG1 can be provided on the lower surface of the slider 10, and a wavelength selection filter that transmits the measurement beams from the encoder system 33 through the surface of the protective glass and blocks the transmission of the distance measurement beams from the laser interferometer system 35 can be provided. From the above description, it can be known that the control device 60 ｉ, the position of the slider 10 in the six-degree-of-freedom direction can be measured by using the encoder system 33 and the laser interferometer system 35 of the first position measurement system 30. In this case, in the encoder system 33, since the optical path lengths of all measurement beams in the air are extremely short, and the optical path lengths of a pair of measurement beams irradiated from the X head 73x to the grating RG1, the optical path lengths of a pair of measurement beams irradiated from the Y head 37ya to the grating RG1, and the optical path lengths of a pair of measurement beams irradiated from the Y head 37yb to the grating RG1 are substantially equal to each other, the influence of air fluctuations can be almost ignored. Therefore, the position information of the slider 10 in the XY plane (including the θz direction) can be measured with high precision by the encoder system 33. Also, the detection points on the actual grating RG1 in the X-axis direction and the Y-axis direction of the encoder system 33, and the detection point on the lower surface of the slider 10 in the Z-axis direction of the laser interferometer system 35 are consistent with the detection center of the mark detection system MDS in the XY plane, respectively. Therefore, the generation of the so-called Abbe error caused by the deviation of the detection point from the detection center of the mark detection system MDS in the XY plane can be suppressed to a substantially negligible level. Therefore, the control device 60 ｉ , by using the first position measurement system 30, the position of the slider 10 in the X-axis direction, the Y-axis direction, and the Z-axis direction can be measured with high precision without the Abbe error caused by the deviation of the detection point from the detection center of the mark detection system MDS in the XY plane. However, in the Z-axis direction parallel to the optical axis AX1 of the mark detection system MDS, at the position on the surface of the wafer W, the position information of the slider 10 in the XY plane is not measured by the encoder system 33, that is, the Z position of the arrangement surface of the grating RG1 and the surface of the wafer W is not the same. Therefore, when the grating RG1 (i.e., the slider 10) is inclined with respect to the XY plane, if the slider 10 is positioned according to the measurement values of the respective encoders of the encoder system 33, as a result, due to the difference ΔZ in the Z position between the arrangement surface of the grating RG1 and the surface of the wafer W (i.e., the position deviation in the Z-axis direction between the detection point of the encoder system 33 and the detection center (detection point) of the mark detection system MDS), a positioning error (a type of Abbe error) corresponding to the inclination of the grating RG1 with respect to the XY plane will be generated. However, this positioning error (position control error) can be obtained through a simple calculation using the difference ΔZ, the pitch amount θx, and the roll amount θy. Taking this as an offset, the slider 10 is positioned based on the corrected position information obtained by correcting the measurement values of the encoder system 33 (each encoder) corresponding to this offset amount, and thus will not be affected by the above-mentioned type of Abbe error. Alternatively, instead of correcting the measurement values of the encoder system 33 (each encoder), one or a plurality of information for moving the slider for positioning the target position of the slider 10, etc. can be corrected based on the above-mentioned offset. In addition, when the grating RG1 (i.e., the slider 10) is inclined relative to the XY plane, the head 32 can also be moved in such a way that no positioning error is caused by the inclination. That is, when the inclination of the grating RG1 (i.e., the slider 10) relative to the XY plane is measured by the first position measurement system 30 (e.g., the laser interferometer system 35), the surface plate 12 holding the head 32 can also be moved according to the position information obtained by using the first position measurement system 30. The surface plate 12 can be moved as described above using the vibration isolation device 14. Also, when the grating RG1 (i.e., the slider 10) is inclined relative to the XY plane, the position information of the mark obtained by using the mark detection system MDS can also be corrected according to the positioning error caused by the inclination. As shown in FIGS. 4, 5(A) and 5(B), the second position measurement system 50 has a pair of heads 52A and 52B respectively provided on the lower surfaces of one end and the other end in the longitudinal direction of the aforementioned head mounting member 51, and scale members 54A and 54B arranged opposite to the heads 52A and 52B. The upper surfaces of the scale members 54A and 54B are set to the same height as the surface of the wafer W held by the wafer holder WH. Reflective two-dimensional gratings RG2a and RG2b are formed on the upper surfaces of the scale members 54A and 54B respectively. The two-dimensional gratings (hereinafter simply referred to as gratings) RG2a and RG2b each include a reflective diffraction grating (X diffraction grating) with the X-axis direction as the periodic direction and a reflective diffraction grating (Y diffraction grating) with the Y-axis direction as the periodic direction. The pitch of the grating lines of the X diffraction grating and the Y diffraction grating is set to, for example, 1 μm. The scale members 54A and 54B are made of a material with a low coefficient of thermal expansion, such as the aforementioned zero-expansion material, and are respectively fixed to the surface plate 12 through the support members 56 as shown in FIGS. 5(A) and 5(B). In this embodiment, the dimensions of the scale members 54A and 54B and the support members 56 are determined such that the gratings RG2a and RG2b face each other with a gap of about several millimeters from the heads 52A and 52B. As shown in FIG. 7, one of the heads 52A fixed to the lower surface of the +X side end of the head mounting member 51 includes an XZ head 58X housed inside the same housing and having the X-axis and Z-axis directions as the measurement directions 1 and a YZ head 58Y having the Y-axis and Z-axis directions as the measurement directions 1 . The XZ head 58X 1 (more precisely, the XZ head 58X 1The irradiation point of the emitted measurement beam on the grating RG2a) and the YZ head 58Y 1 (more precisely, the YZ head 58Y 1 The irradiation point of the emitted measurement beam on the two-dimensional grating RG2a) is arranged on the same straight line parallel to the Y-axis. On the other hand, the head portion 52B, although symmetrically arranged with respect to the head portion 52A with respect to the straight line parallel to the Y-axis of the optical axis AX1 passing through the mark detection system MDS (hereinafter referred to as the reference axis) LV, has the same configuration as the head portion 52A. That is, the head portion 52B has an XZ head 58X 1 , YZ head 58Y 1 The XZ head 58X symmetrically arranged 2 , YZ head 58Y 2 , from the XZ head 58X 2 , YZ head 58Y 2 The irradiation points of the measurement beams respectively irradiated on the grating RG2b are set on the same straight line parallel to the Y-axis. The head portions 52A, 52B constitute an XZ linear encoder that measures the position in the X-axis direction (X position) and the position in the Z-axis direction (Z position) of the gratings RG2a, RG2b using the scale members 54A, 54B respectively, and a YZ linear encoder that measures the position in the Y-axis direction (Y position) and the Z position. Here, the gratings RG2a, RG2b are formed on the upper surfaces of the scale members 54A, 54B respectively fixed to the surface plate 12 through the support members 56, and the head portions 52A, 52B are provided on the head mounting member 51 integrated with the mark detection system MDS. As a result, the head portions 52A, 52B measure the position with respect to the surface plate 12 of the mark detection system MDS (the positional relationship between the mark detection system MDS and the surface plate 12). For convenience of explanation below, the XZ linear encoder and the YZ linear encoder are marked with the same symbols as those used for the XZ head 58X 1 , 58X 2 , YZ head 58Y 1 , 58Y 2 The same symbols are marked as the XZ linear encoder 58X 1, 58X 2 , and the YZ linear encoder 58Y 1 , 58Y 2 (see Figure 8). In this embodiment, the XZ linear encoder 58X 1 and the YZ linear encoder 58Y 1 constitute the four-axis encoder 58 for the position information of the measurement dial 12 relative marking detection system MDS in the X-axis, Y-axis, Z-axis, and θx directions 1 (see Figure 8). Similarly, the XZ linear encoder 58X 2 and the YZ linear encoder 58Y 2 constitute the four-axis encoder 58 for the position information of the measurement dial 12 relative marking detection system MDS in the X-axis, Y-axis, Z-axis, and θx directions 2 (see Figure 8). In this case, based on the position information of the dial 12 relative marking detection system MDS in the Z-axis direction measured by the four-axis encoder 58 1 , 58 2 the position information of the dial 12 relative marking detection system MDS in the θy direction is obtained, and based on the position information of the dial 12 relative marking detection system MDS in the Y-axis direction measured by the four-axis encoder 58 1 , 58 2 the position information of the dial 12 relative marking detection system MDS in the θz direction is obtained. Therefore, the four-axis encoder 58 1 and the four-axis encoder 58 2 constitute the second position measurement system 50 for the position information of the measurement dial 12 relative marking detection system MDS in the 6-degree-of-freedom direction, that is, the relative position information of the measurement marking detection system MDS and the dial 12 in the 6-degree-of-freedom direction. The relative position information of the marking detection system MDS and the dial 12 in the 6-degree-of-freedom direction measured by the second position measurement system 50 is supplied to the control device 60 at any time ｉ , the control device 60 ｉ , based on the information of this relative position, in such a way that the detection point of the first position measuring system 30 has a desired positional relationship with the detection center of the mark detection system MDS. Specifically, the positions of the detection point of the first position measuring system 30 and the detection center of the mark detection system MDS in the XY plane are made to coincide at the order of, for example, nm, and the surface of the wafer W on the slider 10 is made to coincide with the detection position of the mark detection system MDS, and the actuators of the three antivibration devices 14 are controlled in real time. In addition, as long as the detection point of the first position measuring system 30 can be controlled to have a desired positional relationship with the detection center of the mark detection system MDS, it is also acceptable that the second position measuring system 50 cannot measure the relative position information in all directions of six degrees of freedom. From the description of the aforementioned first position measuring system 30 and the description of the above-mentioned second position measuring system 50, it can be clearly understood that the measuring device 100 ｉ constitutes a position measuring system for measuring the position information of the slider 10 relative to the mark detection system MDS in six degrees of freedom directions by means of the first position measuring system 30 and the second position measuring system 50. Figure 8 shows the control device 60 1 configured centering around the control systems of the respective measuring devices 100 ｉ (i = 1 to 3) of the measurement system 500 2 and the control systems of the respective measuring devices 100 ｉ (i = 4 to 6) of the measurement system 500 ｉ shown in a block diagram of the input / output relationship. The control device 60 ｉ includes a workstation (or microcomputer), etc., and overall controls the respective components of the measuring device 100 ｉ As shown in Figure 8, the measuring device 100 ｉ has a part of the components shown in Figure 4 arranged together with the wafer transfer system 70 ｉ inside the chamber 101 ｉ . The wafer transfer system 70 ｉ is composed of, as described above, for example, a horizontal articulated robot. The measurement system 500 2 is equipped with three measuring devices 100 ｉ The same chamber as the chamber 502 that houses (i = 4 to 6) and the transfer system 521, and the EFEM system 510 disposed on one side of the chamber, and the above-mentioned measurement system 500 1 Are similarly configured. In this embodiment, the measurement system 500 2 As can be clearly seen from FIG. 1, although it is not connected online to the exposure apparatus 200 and the C / D 300 in the same way as the measurement system 500 1 It can also be connected online to at least one of the exposure apparatus 200 and the C / D 300. In this embodiment, although not shown in the figure, near the ceiling of the clean room directly above the three load ports 514 of the EFEM system 510 of the measurement system 500 2 An OHT rail is provided. The FOUP 520 is carried into the load port 514 by the OHT. Also, the three measurement devices 100 2 Comprised by the measurement system 500 ｉ Each of (i = 4 to 6) is configured in the same way as the aforementioned measurement device 100 ｉ (i = 1 to 3). The exposure apparatus 200 is, for example, a projection exposure apparatus (scanner) of the step-and-scan type. FIG. 9 shows a diagram with some components in the chamber of the exposure apparatus 200 omitted. As shown in FIG. 9, the exposure apparatus 200 includes an illumination system IOP, a reticle stage RST for holding the reticle R, a projection unit PU for projecting an image of the pattern formed on the reticle R onto a wafer W coated with a photosensitive agent (resist), a wafer stage WST for holding the wafer W and moving in the XY plane, and a control system for these. The exposure apparatus 200 includes a projection optical system PL having an optical axis AX parallel to the Z-axis direction. The illumination system IOP includes a light source and an illumination optical system connected to the light source through a light transmission optical system, and uses illumination light (exposure light) IL to illuminate a slit-shaped illumination area IAR extending longitudinally in the X-axis direction (the direction orthogonal to the plane of the paper in FIG. 9) on the reticle R set (restricted) by the reticle shutter (mask system) with substantially uniform illuminance. The configuration of the illumination system IOP is disclosed in, for example, the specification of U.S. Patent Application Publication No. 2003 / 0025890. Here, as the illumination light IL, for example, ArF excimer laser light (wavelength 193 nm) is used. The reticle stage RST is arranged below the illumination system IOP in FIG. 9. The reticle stage RST can be slightly driven within the horizontal plane (XY plane) on a reticle stage surface plate (not shown) by a reticle stage drive system 211 (not shown in FIG. 9, refer to FIG. 10) including, for example, a linear motor, and can be driven within a predetermined stroke range in the scanning direction (Y-axis direction in the left-right direction within the paper surface in FIG. 9). On the reticle stage RST, a reticle R is placed, which has a pattern area formed on the surface on the -Z side (pattern surface) and a plurality of marks whose positional relationship with the pattern area is known. The position information of the reticle stage RST within the XY plane (including the rotation information in the θz direction) is detected at any time by a reticle laser interferometer (hereinafter referred to as "reticle interferometer") 214 with an analytical ability of, for example, about 0.25 nm through a moving mirror 212 (or a reflecting surface formed on the end face of the reticle stage RST). The measurement information of the reticle interferometer 214 is supplied to an exposure control device 220 (refer to FIG. 10). In addition, the position information of the above-mentioned reticle stage RST within the XY plane can also be measured by an encoder instead of the reticle interferometer 214. The projection unit PU is arranged below the reticle stage RST in FIG. 9. The projection unit PU includes a lens barrel 240 and a projection optical system PL held within the lens barrel 240. The projection optical system PL is, for example, telecentric on both sides and has a predetermined projection magnification (such as 1 / 4 times, 1 / 5 times, or 1 / 8 times, etc.). The reticle R is arranged such that the first surface (object surface) of the projection optical system PL is substantially coincident with the pattern surface, and a wafer W coated with a resist (sensitizer) on its surface is arranged on the second surface (image surface) side of the projection optical system PL. Therefore, after illuminating the illumination area IAR on the reticle R with the illumination light IL from the illumination system IOP, a reduced image (a reduced image of a part of the circuit pattern) of the circuit pattern on the reticle R within the illumination area IAR is formed on the area (hereinafter also referred to as the exposure area) IA on the wafer W conjugate to the illumination area IAR through the projection optical system PL by the illumination light IL passing through the reticle R. Then, by the synchronous drive of the reticle stage RST and the wafer stage WST, the reticle R is moved in the scanning direction (Y-axis direction) relative to the illumination area IAR (illumination light IL), and the wafer W is moved in the scanning direction (Y-axis direction) relative to the exposure area IA (illumination light IL), thereby performing scanning exposure of one irradiation area (zoned area) on the wafer W and transferring the pattern of the reticle R to the irradiation area. As the projection optical system PL, for example, a refractive system composed of a plurality of, for example, about 10 to 20 refractive optical elements (lens elements) arranged along the optical axis AX parallel to the Z-axis direction is used. Among the plurality of lens elements on the object plane side (the side of the reticle R) of the plurality of lens elements constituting the projection optical system PL, the plurality of lens elements can be displaced and driven in the Z-axis direction (the optical axis direction of the projection optical system PL) by a driving element (not shown), such as a piezoelectric element, etc., and driven in the tilting direction with respect to the XY plane (i.e., the θx direction and the θy direction), which are movable lenses. Further, the imaging characteristic correction controller 248 (not shown in FIG. 9, refer to FIG. 10) individually drives each movable lens by independently adjusting the voltage applied to each driving element according to an instruction from the exposure control device 220, so as to adjust various imaging characteristics (magnification, distortion, astigmatism, coma, field curvature, etc.) of the projection optical system PL. In addition, instead of or in addition to the movement of the movable lens, an airtight chamber can be provided between adjacent specific lens elements inside the lens barrel 240, and the pressure of the gas in the airtight chamber can be controlled by the imaging characteristic correction controller 248, or a configuration capable of displacing the center wavelength of the illumination light IL by the imaging characteristic correction controller 248 can also be adopted. The imaging characteristics of the projection optical system PL can also be adjusted by these configurations. The wafer stage WST is driven in the X-axis direction and the Y-axis direction on the wafer stage surface plate 222 by a stage driving system 224 (shown as a block in FIG. 9 for convenience of explanation) including a planar motor or a linear motor, etc., with a predetermined stroke, and is slightly driven in the Z-axis direction, the θx direction, the θy direction, and the θz direction. On the wafer stage WST, the wafer W is held by a wafer holding tool (not shown) by vacuum adsorption or the like. In this embodiment, the wafer holding tool can adsorb and hold a 300 mm wafer. In addition, instead of the wafer stage WST, a stage device having a first stage that moves in the X-axis direction, the Y-axis direction, and the θz direction, and a second stage that moves slightly in the Z-axis direction, the θx direction, and the θy direction on the first stage can also be used. In addition, either one or both of the wafer stage WST and the wafer holding tool of the wafer stage WST can be referred to as the "second substrate holding member". The position information of the wafer stage WST in the XY plane (including rotation information (yaw amount (rotation amount θz in the θz direction), pitch amount (rotation amount θx in the θx direction), roll amount (rotation amount θy in the θy direction))) is detected at any time by a laser interferometer system (hereinafter simply referred to as an interferometer system) 218 with an analysis ability of, for example, about 0.25 nm through a moving mirror 216 (or a reflecting surface formed on the end face of the wafer stage WST). In addition, instead of the interferometer system 218, the position information of the wafer stage WST in the XY plane can also be measured by an encoder system. The measurement information of the interferometer system 218 is supplied to the exposure control device 220 (refer to FIG. 10). The exposure control device 220 controls the position of the wafer stage WST in the XY plane (including rotation in the θz direction) through the stage drive system 224 according to the measurement information of the interferometer system 218. Also, although not shown in FIG. 9, the position and tilt amount of the surface of the wafer W in the Z-axis direction are measured by a focus sensor AFS (refer to FIG. 10) constituted by a multi-point focus position detection system of an oblique incidence method disclosed in, for example, the specification of U.S. Patent No. 5,448,332. The measurement information of this focus sensor AFS is also supplied to the exposure control device 220 (refer to FIG. 10). Also, on the wafer stage WST, a reference plate FP having the same height as the surface of the wafer W is fixed. On the surface of this reference plate FP, a first reference mark for baseline measurement of the alignment detection system AS and a pair of second reference marks for detection by the reticle alignment detection system described later are formed. On the side surface of the lens barrel 240 of the projection unit PU, an alignment detection system AS for detecting the alignment mark or the first reference mark formed on the wafer W is provided. As the alignment detection system AS, for example, an imaging type alignment sensor of an image processing method that illuminates the mark with broadband (broadband) light such as a halogen lamp and measures the mark position by performing image processing on the image of this mark, that is, an FIA (Field Image Alignment) system is used. In addition, instead of the alignment detection system AS of the image processing method, a diffraction light interference type alignment system can be used, or the alignment detection system AS and the diffraction light interference type alignment system can be used together. The exposure device 200 further has a pair of reticle alignment detection systems 213 (not shown in FIG. 9, refer to FIG. 10) provided at a predetermined distance in the X-axis direction above the reticle stage RST, which can simultaneously detect a pair of reticle marks at the same Y position on the reticle R placed on the reticle stage RST. The detection result of the reticle alignment detection system 213 for the mark is supplied to the exposure control device 220. FIG. 10 shows the input / output relationship of the exposure control device 220 in a block diagram. As shown in FIG. 10, in addition to the above-described constituent parts, the exposure device 200 further includes a wafer transfer system 270 for transferring wafers, which is connected to the exposure control device 220. The exposure control device 220 includes a microcomputer or a workstation, etc., and overall controls the entire device including the above-described constituent parts. The wafer transfer system 270 is constituted by, for example, a horizontal articulated robot. Referring back to FIG. 1, the C / D 300, although not shown in the figure, has, for example, a coating unit for coating a wafer with a sensitizer (resist), a developing unit capable of developing the wafer, a baking unit for performing pre-baking (PB) and post-exposure bake (PEB), and a wafer transfer system (hereinafter referred to as the in-C / D transfer system for convenience of explanation). The C / D 300 further has a temperature adjustment unit 330 capable of adjusting the temperature of the wafer. The temperature adjustment unit 330 is usually a cooling unit and, for example, has a flat plate (temperature adjustment device) called a cooling plate. The cooling plate is cooled, for example, by the circulation of cooling water. In addition, there is also a case of electronic cooling using the Peltier effect. The analysis device 3000 performs various analyses and calculations according to instructions from the host computer 2000. For example, the analysis device 3000, for example, is based on a measurement system 500 as described later 2 The obtained measurement results of the overlay deviation are used to perform calculations according to a predetermined program to calculate a correction value to be fed back to the exposure device 200. In the substrate processing system 1000 of the present embodiment, both the exposure device 200 and the C / D 300 are equipped with barcode readers (not shown). During the transfer of each wafer in the wafer transfer system 270 (refer to FIG. 10) and the in-C / D transfer system (not shown), the barcode readers appropriately read the identification information of each wafer, such as the wafer number, lot number, etc. Hereinafter, for the sake of simplifying the description, the description related to the reading of the identification information of each wafer using the barcode reader is omitted. Next, regarding the three measurement devices 100 1 in one of the measurement systems 500 1 ~100 3 when processing a plurality of wafers (for example, 25 wafers) included in the same lot in parallel, the operation of each measurement device 100 ｉ will be described based on the flowchart of FIG. 11 corresponding to the processing arithmetic expression of the control device 60 ｉ of the measurement device 100 ｉ Here, for example, among the 25 wafers of the same lot, the measurement device 100 1 is responsible for measuring and processing 9 wafers, and the measurement device 100 2 is responsible for measuring and processing 8 wafers, and the measurement device 100 3Responsible for measuring and processing 8 pieces. In addition, a plurality of wafers (25 pieces) included in the same batch can also be allocated to the measuring device 100 1 , the measuring device 100 2 , the measuring device 100 3 among the two measuring devices. Also, as described above, the allocation of a plurality of wafers included in the same batch can be approximately equal or not approximately equal. As a prerequisite, the wafer W to be measured by the measuring device 100 ｉ (i = 1 to 3) is a 300-mm wafer, and is a wafer before coating the resist after the process processing (etching, oxidation / diffusion, film formation, ion implantation, planarization (CMP), etc.) in the previous step of wafer processing. On the wafer W to be measured, a plurality of, for example, I (one example I = 98) zoning areas called irradiation areas are formed in a matrix configuration by the exposure of the previous layer. On the street lines surrounding each irradiation area or the street lines inside each irradiation (in the case of extracting a plurality of wafers from one irradiation area), a plurality of types of marks are provided, such as search alignment marks (search marks) for search alignment and wafer alignment marks (wafer marks) for micro alignment. This plurality of types of marks are formed together with the irradiation areas. In this embodiment, two-dimensional marks are used as the search marks and the wafer marks. Also, by the operator of the measuring device 100 ｉ , the information required for the alignment measurement of the wafer W is input in advance through an input device (not shown) and stored in the memory of the control device 60 ｉ . Here, the information required for the alignment measurement includes various information such as the thickness information of the wafer W, the flatness information of the wafer holder WH, and the design information of the configuration of the irradiation areas and alignment marks on the wafer W. The processing corresponding to the flowchart of FIG. 11 described below is performed in parallel and individually by three measuring devices 100 1 to 100 3 and. The start of the processing formula corresponding to the flowchart of FIG. 11 is, for example, when the measurement start is instructed by the operator or the host computer 2000. At this time, among the 25 wafers included in one batch, the wafers with the number of responsible wafers for each measuring device are stored in the chamber 101 located in the measuring device 100 ｉ ​ ｉ inside a wafer carrier at a predetermined position. However, it is not limited thereto, and it is also possible to use three measuring devices 100 ｉ sequentially load each of a batch of wafers into the measuring device 100 in parallel with the measurement process ｉ inside. For example, it is also possible to, under the management of a measurement system control device 530 such as a control robot 516, a transfer member 524, and a transfer member 526 1 take out, one by one in sequence, for example, 25 wafers included in one batch in a predetermined FOUP 520 by the robot 516, and transfer them in sequence to the three measuring devices 100 ｉ at their respective predetermined transfer positions. In this case, the start of the processing formula corresponding to the flowchart of FIG. 11 is triggered by the measurement system control device 530 1 issuing a transfer start command to each control device 60 ｉ and the robot 516. In addition, when the exposure device 200 is connected to the measurement system 500 1 it is also possible to issue a measurement start instruction to the measurement system control device 530 from the exposure control device 220 of the exposure device 200 instead of through the host computer 2000 1 In addition, the measuring device 100 ｉ , like the exposure device 200 and the C / D 300, is equipped with a barcode reader (not shown). During the transfer of wafers in the wafer transfer system 70 ｉ (refer to FIG. 8), the barcode reader appropriately reads identification information of each wafer, such as a wafer number, a lot number, etc. Hereinafter, for simplicity of explanation, the description related to the reading of the identification information of each wafer using the barcode reader is omitted. In addition, each of the measuring devices 100 ｉ may not be equipped with a barcode reader. For example, a barcode reader may also be arranged in the transfer system 521. First, in step S102, the count value i of the counter displaying the wafer number to be measured is initialized to 1 (i←1). In the next step S104, the wafer W is loaded onto the slider 10. The loading of this wafer W is performed under the control of the control device 60 ​ｉ under the management of the wafer transfer system 70 ｉ with the vertical movement member on the slider 10. Specifically, by the wafer transfer system 70 ｉ transfer the wafer W from the wafer carrier (or handover position) to above the slider 10 located at the loading position, and drive the vertical movement member to rise by a predetermined amount with the driving device 13, whereby the wafer W is transferred to the vertical movement member. Then, after retreating from above the slider 10, the vertical movement member is driven to descend by the driving device 13, whereby the wafer W is placed on the wafer holder WH on the slider 10. Then, the vacuum pump 11 is turned on, and the wafer W loaded on the slider 10 is vacuum adsorbed by the wafer holder WH. In addition, in parallel with the measurement process of the measurement device 100 ｉ when each of the plurality of wafers included in one batch is sequentially carried into the measurement device 100 ｉ in the case of, before the above-mentioned wafer loading, a plurality of wafers in a predetermined FOUP 520 are sequentially taken out by the robot 516 one by one, transferred from the robot 516 to the transfer member 524, and transferred to the measurement device 100 by the transfer member 524 ｉ at a predetermined handover position, and handed over to the wafer transfer system 70 ｉ ｉ . In the next step S106, the position of the wafer W in the Z-axis direction (Z position) is adjusted. Before this adjustment of the Z position, by the control device 60 ｉ , according to the relative position information of the mark detection system MDS and the surface plate 12 measured by the second position measurement system 50 in the Z-axis direction, θy direction, and θx direction, control the internal pressure of the air hangers of the three vibration isolation devices 14 (the driving force in the Z-axis direction generated by the vibration isolation device 14), and the surface plate 12 is set so that its upper surface is parallel to the XY plane and the Z position becomes a predetermined reference position. It can be considered that the thickness of the wafer W is the same. Therefore, in step S106, the control device 60 ｉ ​, based on the thickness information of the wafer W in the memory, adjust the driving force in the Z-axis direction generated by the three vibration isolation devices 14, such as the internal pressure of the air hanger (the amount of compressed air), in such a way that the surface of the wafer W is set within the range of the focal position of the adjustable optical system by means of the autofocus function of the mark detection system MDS, drive the chuck table 12 in the Z-axis direction, and adjust the Z position of the surface of the wafer W. In addition, when the measurement unit 40 is equipped with a focal position detection system, the control device 60 ｉ can also adjust the Z position of the wafer surface according to the detection result (output) of the focal position detection system. For example, the mark detection system MDS can also be equipped with a focal position detection system that detects the position of the surface of the wafer W in the Z-axis direction through the optical element (objective optical element) at the front end. Also, the adjustment of the Z position of the surface of the wafer W based on the detection result of the focal position detection system can be performed by moving the chuck table 12 using the vibration isolation device 14 and moving the slider 10 together with the chuck table 12. In addition, a drive system 20 configured to drive the slider 10 not only in the directions within the XY plane but also in the Z-axis direction, θx direction, and θy direction can be adopted, and the drive system 20 is used to move the slider 10. In addition, the adjustment of the Z position of the wafer surface can also include the adjustment of the inclination of the wafer surface. By using the drive system 20 to adjust the inclination of the wafer surface, when an error (a kind of Abbe error) caused by the difference ΔZ between the placement surface of the grating RG1 and the Z position of the surface of the wafer W may occur, at least one of the above countermeasures can be executed. In the next step S108, the search alignment of the wafer W is performed under the setting of the measurement conditions of the search marks determined in advance. The measurement conditions of the search marks can be the same conditions as the first conditions set in step S110 described later, or can be measurement conditions more suitable for the measurement of the search marks considering the differences between the wafer marks and the search marks. In the search alignment, for example, at least two search marks located approximately symmetrically with respect to the center of the wafer W at the peripheral part are detected using the mark detection system MDS. The control device 60 ｉ , controls the driving of the slider 10 by the drive system 20, while positioning each search mark within the detection area (detection field of view) of the mark detection system MDS, obtains the measurement information of the first position measurement system 30 and the measurement information of the second position measurement system 50, and calculates the position information of each search mark based on the detection signal when detecting the search marks formed on the wafer W using the mark detection system MDS, and the measurement information of the first position measurement system 30 (and the measurement information of the second position measurement system 50). Here, the measurement of the search mark is performed by a detector receiving light of a predetermined wavelength (detection wavelength) that is generated from the search mark by irradiating the search mark with broadband light (detection light) from the optical system of the mark detection system MDS, and diffracted light for a predetermined number of times (for example, ±1 time), and processing the photoelectric conversion signal thereof according to predetermined signal processing conditions. Control device 60 ｉ , based on the detection result of the mark detection system MDS output from the signal processing device 49 (the relative positional relationship between the detection center (index center) of the mark detection system MDS obtained by processing the above photoelectric conversion signal under the above signal processing conditions and each search mark), and the measurement value of the first position measurement system 30 (and the measurement value of the second position measurement system 50) at the time of detecting each search mark, calculates the position coordinates of the two search marks in the reference coordinate system. Here, the reference coordinate system is an orthogonal coordinate system defined by the distance measurement axis of the first position measurement system 30. Thereafter, the residual rotation error of the wafer W is calculated from the position coordinates of the two search marks, and the slider 10 is slightly rotated so that this rotation error becomes substantially zero. Thereby, the search alignment of the wafer W is completed. In addition, since the wafer W is actually loaded on the slider 10 in a pre-aligned state, the deviation of the center position of the wafer W is negligibly small, and the residual rotation error is very small. In the next step S110, as the measurement condition (alignment measurement condition) of the foregoing mark including at least one condition of the irradiation condition for irradiating the mark with the detection light, the light receiving condition for receiving the light generated from the mark, and the signal processing condition for processing the photoelectric conversion signal obtained from the light generated from the mark, the first condition indicated from the measurement system control device 530 1 is set. In step S110, at least one condition of the switchable irradiation condition, light receiving condition, and signal processing condition suitable for the detection of the wafer mark is set as the first condition. Here, as an example of the first condition, for example, the wavelength of the illumination light in the mark detection system MDS is optimized. Also, as an example, here, the wafer mark formed on the wafer W to be processed is a mark laminated on the outermost layer of the pattern layer (layer) of the wafer W, and there is no need to limit the wavelength of the special observation light (illumination light) for observing this, and it can be observed with broadband white light emitted from an illumination source such as a halogen lamp. Therefore, the control device 60 ｉ , sets (controls) the wavelength selection mechanism in such a way that a filter that allows light beams (white light) with wavelengths of 530 to 800 nm to pass through is selected in the wavelength selection mechanism of the mark detection system MDS. In the next step S112, under the setting of the first condition, alignment measurement of the entire wafer is performed (one-point measurement of the entire irradiation area, that is, EGA measurement of the entire irradiation area), that is, a wafer mark is measured for each of the 98 irradiation areas. Specifically, the control device 60 ｉ , in the same manner as the measurement of the position coordinates of each search mark during the aforementioned search alignment, obtains the position coordinates of the wafer mark on the wafer W in the reference coordinate system, that is, the position coordinates of the irradiation area. However, in this case, the detection light with a broadband wavelength specified by the first condition is used as the preset light quantity and irradiated onto the wafer mark through the optical system of the mark detection system MDS under the general illumination condition (σ value). The detector receives the diffracted light of a predetermined number of times (for example, ±1 time) generated from the wafer mark, and processes its photoelectric conversion signal according to the preset signal processing condition (processing formula), thereby obtaining the mark detection result used to calculate the position coordinates of the wafer mark on the wafer W in the reference coordinate system. However, in this case, different from the search alignment, when calculating the position coordinates of the irradiation area, the measurement information of the second position measurement system 50 must be used. The reason is that, as described above, the control device 60 ｉ , based on the measurement information of the second position measurement system 50, instantaneously controls the actuators of the three vibration isolation devices 14 such that the detection point of the first position measurement system 30 coincides with the detection center of the mark detection system MDS in the XY plane at the order of, for example, nm, and the surface of the wafer W on the slider 10 coincides with the detection position of the mark detection system MDS. However, during the detection of the wafer mark, since there is no compensation for the coincidence of the detection point of the first position measurement system 30 and the detection center of the mark detection system MDS in the XY plane at the order of, for example, nm, the position deviation amount between the two must be considered as an offset to calculate the position coordinates of the irradiation area. For example, by using the above offset to correct the detection result of the mark detection system MDS or the measurement value of the first position measurement system 30, the position coordinates of the wafer mark on the wafer W calculated in the reference coordinate system can be corrected. Here, when performing this one-point measurement of the entire irradiation area, the control device 60 ｉ , based on the measurement information of the first position measurement system 30 and the measurement information of the second position measurement system 50, moves the slider 10 (wafer W) in at least one of the X-axis direction and the Y-axis direction through the drive system 20 to position the wafer mark within the detection area of the mark detection system MDS. That is, the slider 10 is moved relative to the mark detection system MDS in the XY plane in a stepwise scanning manner to perform the one-point measurement of the entire irradiation area. In addition, when the measurement unit 40 is provided with a focus position detection system, similar to the description in step S106, the control device 60 ｉ can also adjust the Z position of the wafer surface according to the detection result (output) of the focus position detection system. When performing the alignment measurement of the entire wafer (one-point measurement of the entire irradiation area) in step S112, if the slider 10 moves in the XY plane, although a lateral load will be generated on the surface plate 12 as it moves, in this embodiment, the control device 60 ｉ individually feedback-controls the three vibration isolation devices 14 in such a way that the influence of the lateral load is canceled out based on the X and Y coordinate positions of the slider included in the measurement information of the first position measurement system 30, and individually controls the driving force in the Z-axis direction generated by each vibration isolation device 14. In addition, the control device 60 ｉ can also predict the lateral load acting on the surface plate 12 based on the information of the known movement path of the slider 10 without using the measurement information of the first position measurement system 30, and individually feedback-controls the three vibration isolation devices 14 in such a way that the influence of the lateral load is canceled out. Also, in this embodiment, since the unevenness information (hereinafter referred to as chuck flatness information) of the wafer holding surface (the surface defined by the upper end faces of a plurality of pins of the pin chuck) of the wafer holder WH is obtained in advance through experiments or the like, when moving the slider 10 during alignment measurement (for example, one-point measurement of the entire irradiation area), the control device 60 ｉ feedback-controls the three vibration isolation devices 14 based on the chuck flatness information so that the area of the wafer W surface including the wafer mark to be measured is quickly within the depth of focus range of the optical system of the mark detection system MDS, thereby finely adjusting the Z position of the surface plate 12. In addition, either or both of the above feedback control for canceling the influence of the lateral load acting on the surface plate 12 and the feedback control based on the chuck flatness information may not be executed. In addition, when the magnification of the mark detection system MDS can be adjusted, it is also possible to set it to a low magnification during search alignment and to a high magnification during alignment measurement. Also, when the deviation of the center position of the wafer W mounted on the slider 10 and the residual rotational error are small enough to be ignored, step S108 can also be omitted. In the full-irradiation area 1-point measurement in step S112, the measured values of the position coordinates of the sampled irradiation area (sampled irradiation area) taken in the reference coordinate system used in the EGA operation described later are detected. The sampled irradiation area refers to a specific plurality (at least three) of irradiation areas predetermined as those used in the EGA operation described later among all the irradiation areas on the wafer W. In addition, in the full-irradiation area 1-point measurement, the entire irradiation area on the wafer W becomes the sampled irradiation area. After step S112, the process proceeds to step S114. In step S114, the EGA operation is performed using the position information of the wafer marks measured in step S112. The EGA operation, in the measurement of the above wafer marks (EGA measurement), means a statistical operation that, based on the data of the difference between the design values and the measured values of the position coordinates of the sampled irradiation area, uses a statistical operation such as the least squares method to obtain the coefficients of the model formula that expresses the relationship between the position coordinates of the irradiation area and the correction amount of the position coordinates of the irradiation area. In this embodiment, as an example, the following model formula is used to calculate the correction amount from the design values of the position coordinates of the irradiation area. [Equation 1] Here, dx and dy are the correction amounts in the X-axis direction and the Y-axis direction from the design values of the position coordinates of the irradiation area, and X and Y are the designed position coordinates of the irradiation area in the wafer coordinate system with the center of the wafer W as the origin. That is, the above formula (1) is a polynomial related to the designed position coordinates X and Y of each irradiation area in the wafer coordinate system with the center of the wafer as the origin, and is a model formula that expresses the relationship between the position coordinates X and Y and the correction amounts (alignment correction components) dx and dy of the position coordinates of the irradiation area. In addition, in this embodiment, due to the cancellation of the rotation between the reference coordinate system and the wafer coordinate system by the aforementioned search alignment, hereinafter, the reference coordinate system and the wafer coordinate system are not particularly distinguished and are all described as the reference coordinate system. As long as the model formula (1) is used, the correction amount of the position coordinates of the irradiation area can be obtained from the position coordinates X and Y of the irradiation area on the wafer W. However, in order to calculate this correction amount, the coefficients a 0 , a 1 , …, b 0 , b 1 , … must be obtained. After the EGA measurement, based on the data of the difference between the design values and the measured values of the position coordinates of the sampled irradiation area, using a statistical operation such as the least squares method, the coefficients a 0 , a 1 , …, b 0 , b 1 , …. After determining the coefficients a 0 , a 1 , …, b 0 , b 1 , …, the design position coordinates X, Y of each irradiation area (partition area) in the wafer coordinate system are substituted into the model formula (1) after the coefficients are determined, and the correction amounts dx, dy of the position coordinates of each irradiation area are obtained. Thereby, the true arrangement of a plurality of irradiation areas (partition areas) on the wafer W can be obtained (including not only linear components but also non-linear components as deformation components). In addition, in the case of the wafer W that has been exposed, due to the influence of the procedures up to this point, the waveform of the detection signal obtained as the measurement result is not necessarily good for all wafer marks. If the positions of the wafer marks with such a measurement result (the waveform of the detection signal) being poor are included in the above EGA operation, the position errors of the wafer marks with such a measurement result (the waveform of the detection signal) being poor will have an adverse effect on the calculation results of the coefficients a 0 , a 1 , …, b 0 , b 1 , …. Therefore, in this embodiment, the signal processing device 49 only sends the measurement results of the wafer marks with good measurement results to the control device 60 ｉ , the control device 60 ｉ , uses the positions of all the wafer marks for which the measurement results have been received to perform the above EGA operation. In addition, the degree of the polynomial of the above formula (1) is not particularly limited. The control device 60 ｉ , assigns a correspondence relationship between the result of the EGA operation and the identification information of the wafer (such as wafer number, lot number), and stores it as alignment history data in an internal or external memory device. In addition, the alignment history data file may also include information other than the result of the EGA operation (such as information on the marks used for the EGA operation). After the EGA operation in step S114 ends, proceed to step S116 to unload the wafer W from the slider 10. This unloading is carried out under the management of the control device 60 ｉ by means of the wafer transfer system 70 and the vertical movement member on the slider 10 in a process opposite to the loading process in step S104. In addition, when measuring a part of a predetermined number of wafers in the same batch responsible for measurement by the measuring device 100 in parallel with the measurement process of the measuring device 100 ｉ and sequentially loading each of them into the measuring device 100 and sequentially unloading them from the measuring device 100 ｉ when the wafer W whose measurement has ended is transferred by the wafer transfer system 70 to the transfer member 526, transported to the aforementioned unloading-side wafer transfer position by the transfer member 526, and then returned to the predetermined FOPU 520 by the robot 516. ｉ In the next step S118, after incrementing the count value i of the counter by 1 (i ← i + 1), proceed to step S120 to determine whether the count value i is greater than the number M of wafers responsible for measurement in the same batch by the measuring device 100 ｉ The number M is 9 for the measuring device 100 ｉ and 8 for the measuring devices 100 ｉ and 100. Next, if the determination in this step S120 is negative, it is determined that the processing of all wafers responsible for measurement by the measuring device 100 has not ended, and return to step S104. Thereafter, repeat the processing (including determination) from step S104 to step S120 until the determination in step S120 is affirmative. ｉ Then, after the determination in step S120 is affirmative, it is determined that the processing of all wafers responsible for measurement by the measuring device 100 has ended, and end the series of processing of this routine. 1 From the description so far, it can be seen that according to the measuring device 100 2 and 100 3 is 8. Next, if the determination in this step S120 is negative, it is determined that the processing of all wafers responsible for measurement by the measuring device 100 has not ended, and return to step S104. Thereafter, repeat the processing (including determination) from step S104 to step S120 until the determination in step S120 is affirmative. ｉ That is, it is determined that the processing of all wafers responsible for measurement by the measuring device 100 has ended, and end the series of processing of this routine. Next, after the determination in step S120 is affirmative, it is determined that the processing of all wafers responsible for measurement by the measuring device 100 has ended, and end the series of processing of this routine. ｉ has ended the processing of all wafers responsible for measurement, and end the series of processing of this routine. From the description so far, it can be seen that according to the measuring device 100 ｉ, when performing alignment measurement, for each of the I (e.g., 98) irradiation regions on the wafer W, the position information (coordinate position information) of at least one wafer mark is measured, and using the measured position information (excluding the position information of the wafer marks with poor measurement results), through statistical operations such as the least squares method, the coefficient a of the above formula (1) is obtained 0 , a 1 , …, b 0 , b 1 , …. Therefore, the deformation components of the wafer grating can be accurately obtained not only for the linear components but also for the non-linear components. Here, the so-called wafer grating means a lattice formed by connecting the centers of the irradiation regions on the wafer W arranged according to the irradiation pattern (data related to the arrangement of the irradiation regions formed on the wafer W). The so-called obtaining the correction amounts (alignment correction components) dx, dy of the position coordinates of the irradiation regions for a plurality of irradiation regions must be to obtain the deformation components of the wafer grating. In addition, in this specification, the wafer grating is simply referred to as "grating", or is also described as "the arrangement of the irradiation regions (or irradiation)". Measurement system 500 1 , can perform the measurement process according to the aforementioned flowchart in parallel by three measurement devices 100 1 ~100 3 . That is, by the measurement devices 100 1 ~100 3 , for the predetermined number of wafers to be measured respectively stored in the wafer carrier, a total of one batch of wafers, with the measurement processing time for substantially 1 / 3 of the number of wafers in one batch, the position of at least one wafer mark is measured for all the irradiation regions of each wafer, and the deformation components of the wafer grating can be accurately obtained not only for the linear components but also for the non-linear components. In addition, in parallel with the measurement process, the wafers are loaded into each measurement device 100 ｉ and the wafers after the measurement is completed are taken out from each measurement device 100 ｉIn the case of loading out, it is also possible to process one batch of wafers loaded into the FOUP 520 through one loading port 514 in parallel, and for one batch of wafers, it is possible to measure the positions of at least one wafer mark for all the irradiation regions of each wafer in a processing time substantially equal to one-third of the number of wafers in one batch, and thus it is possible to accurately obtain not only the linear components but also the non-linear components in the deformation components of the wafer grating. In addition, for the three measuring devices 100 1 ~100 3 , when measuring and processing one wafer in one batch, for example, with the three measuring devices 100 1 ~100 3 under the same conditions, adjustment can also be made in such a way that substantially the same measurement results can be obtained, for example, by using a reference wafer or the like. The information on the wafer grating of each wafer obtained, for example, the data on the deformation components of the wafer grating of each wafer obtained (the coefficients a 0 , a 1 , …, b 0 , b 1 , … in the model formula (1) after that), are sent by the control device 60 of the measuring device 100 ｉ as part of the alignment history data file for each wafer to the measurement system control device 530 ｉ . The measurement system control device 530 1 . The measurement system control device 530 1 , stores the alignment history data file containing the information on the wafer grating of each received wafer, for example, the data on the deformation components of the wafer grating of each received wafer (the coefficients a 0 , a 1 , …, b 0 , b 1 , … in the model formula (1) after that) in the internal memory device for each wafer, for example. As described above, since in the measuring device 100 1 ~100 3 Among them, the measurement processes of the 25 wafers included in the same batch are carried out in parallel, and are allocated and processed in groups of 9 wafers, 8 wafers, and 8 wafers respectively. Therefore, the measurement device 100 1 ~100 3 The measurement processes are completed approximately simultaneously. Therefore, compared with the case of sequentially processing 25 wafers of the same batch with one measurement device, the measurement process can be completed in about 1 / 3 of the time. In addition, in the above case, it is preferably to start the processing of the measurement device 100 1 with one more wafer than the allocated number at the beginning. The measurement system control device 530 1 After the measurement of all the wafers included in one batch is completed, the information of the wafer gratings (alignment history data files) of each of the plurality of wafers included in that batch is immediately sent to the main computer 2000. Of course, the information of the wafer gratings (alignment history data files) sent from the measurement system 500 1 also includes data on the non-linear components of the wafer gratings. In addition, the control device 60 of the measurement device 100 ｉ can also be connected to the main computer 2000 through the LAN 1500, and the information of the wafer gratings (alignment history data files) can be sent to the main computer 2000 from the control device 60 ｉ without passing through the measurement system control device 530 1 and ｉ sent to the main computer 2000. Furthermore, in this embodiment, although the information of the wafer gratings is sent (output) from the measurement system 500 1 the information (data) sent from the measurement system 500 is not limited to this. For example, the coordinate position information of the marks of the plurality of wafers measured by the measurement device 100 1 can also be sent (output) as at least a part of the alignment history data of each wafer. ｉ In addition, initially, the wafers corresponding to the number of wafers responsible for each measurement device among the 25 wafers included in one batch are stored in the chamber 101 ｉ of the measurement device 100 ｉ ​In the case of the wafer carrier inside, at the time point when the measurement ends, the wafers of the number of wafers responsible for each measuring device are returned to each wafer carrier. Therefore, the measurement system control device 530 1 , it is necessary to use the transfer system 521 to return the wafers in each wafer carrier to the FOU P 520. On the other hand, when the wafers of one lot are sequentially loaded into the measuring device 100 ｉ in parallel with the measurement process of the three measuring devices ｉ , the transfer member 526 receives the wafers whose measurement has ended from the wafer transfer system 70 ｉ (any one of i = 1 to 3), conveys them to the unloading side wafer handover position, and the robot 516 loads (returns) the wafers that have been conveyed to the unloading side wafer handover position and whose measurement process is completed into the FOU P 520. Next, the operation flow in the case of continuously processing a plurality of wafers by the lithography system including the exposure device 200 and the C / D 300 will be described. First, by the transfer system inside the C / D (for example, a SCARA robot), the first wafer (W 1 ) is taken out from the wafer carrier in the chamber of the C / D 300 and loaded into the coating section. Thereby, the application of the resist is started by the coating section. After the application of the resist is completed, the transfer system inside the C / D takes out the wafer W 1 from the coating section and loads it into the baking section. Thereby, the heat treatment (PB) of the wafer W 1 is started by the baking section. Next, after the PB of the wafer is completed, the wafer W 1 is taken out from the baking section by the transfer system inside the C / D and loaded into the temperature adjustment section 330. Thereby, the cooling of the wafer W 1 is started by the cooling plate inside the temperature adjustment section 330. This cooling is performed with the target temperature of the air conditioning system of the exposure device 200, which does not have an impact inside the exposure device 200 and is generally set in the range of, for example, 20 to 25°C. Usually, at the time point when it has been loaded into the temperature adjustment section 330, the temperature of the wafer is within the range of ±0.3 [°C] relative to the target temperature, but is adjusted to the range of ±10 [mK] of the target temperature by the temperature adjustment section 330. Next, after the cooling (temperature adjustment) is completed inside the temperature adjustment section 330, the wafer W 1By means of the C / D internal transfer system, it is placed on the loading-side substrate placement part of the substrate transfer part provided between the C / D 300 and the exposure apparatus 200. In the C / D 300, a series of resist coating, PB, cooling for the wafer, and the wafer transfer operations accompanying these series of processes are repeatedly performed in sequence in the same manner as described above, and the wafers are sequentially placed on the loading-side substrate placement part. In addition, in fact, by providing two or more coating parts and the C / D internal transfer system in the chamber of the C / D 300 respectively, parallel processing of a plurality of wafers can be performed, and the time required for pre-exposure processing can be shortened. The wafer W placed on the aforementioned loading-side substrate placement part 1 , is transferred by the wafer transfer system 270 to a predetermined standby position inside the exposure apparatus 200. Among them, the first wafer W does not wait at the standby position, but is directly loaded onto the wafer stage WST by the exposure control device 220. The loading of this wafer is performed by the exposure control device 220 in the same manner as that performed by the aforementioned measurement device 100 ｉ , using the vertical movement member (not shown) on the wafer stage WST and the wafer transfer system 270. After loading, for the wafer on the wafer stage WST, the same search alignment as described above and wafer alignment in the EGA method with, for example, about 3 to 16 irradiation areas as alignment irradiation areas are performed using the alignment detection system AS. During the wafer alignment in this EGA method, the wafer alignment in the exposure apparatus 200 and the alignment history data file of the wafer (target wafer) to be exposed, together with the identification information (such as wafer number, lot number) of the target wafer, etc., are provided from the host computer 2000 to the exposure control device 220 of the exposure apparatus 200. The alignment history data obtained by the exposure apparatus 200 from the host computer 2000 includes information on the wafer gratings of each wafer measured by the measurement system 500 1 , and after the predetermined preparation work, the exposure control device 220 performs wafer alignment as described later. In addition, the exposure control device 220 and the measurement system control device 530 1 can perform the transmission and reception of alignment history data, etc., without passing through the host computer 2000. Here, before the specific description of wafer alignment, the reason for wafer alignment in the EGA method with the exposure apparatus 200 using about 3 to 16 irradiation areas as alignment irradiation areas is described. By the measurement device 100 ｉ The correction amount of the position coordinates of the irradiation area of the wafer W obtained (the coefficient a in the above formula (1) 0, a 1 , …, b 0 , b 1 , …), for example, for aligning the wafer W with respect to the exposure position when exposing the wafer W using the exposure apparatus 200. However, after correcting the measurement position coordinates of the wafer W by the exposure apparatus 200 using the measurement apparatus 100 ｉ , the wafer W is stored in the FOUP 520 after being unloaded from the slider 10 of the measurement apparatus 100 as described above, and the FOUP 520 is carried into the C / D 300 by another transfer system such as an OHT. Next, after the resist is applied to the wafer W by the C / D 300, the wafer W is loaded onto the wafer stage WST of the exposure apparatus 200 for exposure. In this case, the wafer holder WH on the slider 10 and the wafer holder on the wafer stage WST of the exposure apparatus 200, even if the same type of wafer holder is used, the holding state of the wafer W will be different due to individual differences in the wafer holders. Therefore, even if the correction amount of the position coordinates of the irradiation area of the wafer W (the coefficients a ｉ of the above formula (1) ｉ ), a 0 , a 1 , …, b 0 , b 1 , …) is obtained by the measurement apparatus 100, the coefficients a 0 , a 1 , …, b 0 , b 1 , … cannot all be used directly. Therefore, it can be considered that the low-order components (linear components) of the correction amount of the position coordinates of the irradiation area, which are of the first order or lower, are affected by the holding state of the wafer W for each wafer holder, while the high-order components of the second order or higher are hardly affected. The reason is that the high-order components of the second order or higher are presumably mainly components generated due to the deformation of the wafer W caused by the process, and are components unrelated to the holding state of the wafer by the wafer holder. Based on this understanding, the coefficients a of the high-order components obtained for the wafer W by the measurement apparatus 100 ｉ which take time 3, a 4 , ……, a 9 , ……, and b 3 , b 4 , ……, b 9 , ……, then it can be directly used as the coefficient of the high-order component of the correction amount of the position coordinates of the wafer W in the exposure apparatus 200. Therefore, on the wafer stage WST of the exposure apparatus 200, it is sufficient to perform only a simple EGA measurement (for example, measurement of about 3 to 16 wafer marks) for obtaining the linear component of the correction amount of the position coordinates of the wafer W. In the exposure apparatus 200, by aligning with the measurement device 100 included in the alignment history data ｉ After measuring the position information (using the position information of the mark for calculating the correction amount), select the number of wafer marks corresponding to the number of alignment irradiation areas from the wafer marks, and use them as the detection objects. Use the alignment detection system AS to detect the wafer marks of the detection objects. According to the detection results and the position of the wafer stage WST at the time of detection (measurement information of the interferometer system 218), obtain the position information of each wafer mark of the detection objects, and use this position information to perform an EGA operation to obtain the coefficients of the following formula (2). [Formula 2] Next, the exposure control device 220 replaces the coefficients (c 0 , c 1 , c 2 , d 0 , d 1 , d 2 ) with the coefficients (a 0 , a 1 , a 2 , b 0 , b 1 , b 2), using the polynomial related to the designed position coordinates X and Y of each irradiation area in the wafer coordinate system with the center of the wafer represented by the following formula (3) containing the replaced coefficients, the correction amounts (alignment correction components) dx and dy of the position coordinates of each irradiation area are obtained, and based on this correction amount, the target position (hereinafter, for convenience of explanation, referred to as the alignment target position) for correcting the wafer grating and aligning the exposure position (projection position of the reticle pattern) at the time of exposure of each irradiation area is determined. In addition, although the exposure is performed by a scanning exposure method instead of a stationary exposure method in this embodiment, for convenience of explanation, it is referred to as the alignment target position. [Formula 3] In addition, the exposure apparatus 200 also cancels the rotation of the reference coordinate system (stage coordinate system) that defines the movement of the wafer stage WST and the wafer coordinate system by search alignment, so there is no need to particularly distinguish between the reference coordinate system and the wafer coordinate system. Next, the exposure control device 220 controls the position of the wafer stage WST while following the alignment target position, and 1 performs exposure on each irradiation area on the wafer W in a step-and-scan manner. Next, before the exposure of the wafer on the wafer stage WST (at this time, the wafer W 1 ) is completed, the second wafer W 2 is placed on the loading-side substrate placement part of the substrate transfer part by the C / D internal transfer system, transferred to a predetermined standby position inside the exposure apparatus 200 by the wafer transfer system 270, and waits at that standby position. Next, after the exposure of the wafer W 1 is completed, the wafer W 1 on the wafer stage is exchanged with the wafer W 2 , and the same wafer alignment and exposure as described above are performed on the exchanged wafer W 2 . In addition, when the transfer of the wafer W 2 to the standby position is not completed before the exposure of the wafer on the wafer stage (at this time, the wafer W 1 ) is completed, the wafer stage holds the exposed wafer and waits near the standby position. In parallel with the wafer alignment of the exchanged wafer W 2 , the exposed wafer W is transferred by the wafer transfer system 270 1 Transfer to the unloading-side substrate placement unit of the substrate transfer unit. As described above, the wafer that has been exposed and is placed on the unloading-side substrate placement unit of the substrate transfer unit by the wafer transfer system 270 is carried into the baking unit by the C / D in-transfer system, and PEB is performed by the baking device in the baking unit. A plurality of wafers can be accommodated in the baking unit at the same time. On the other hand, the wafer after PEB is completed is taken out of the baking unit by the C / D in-transfer system and carried into the developing unit, and development is started by the developing device in the developing unit. Next, after the development of the wafer is completed, the wafer is taken out of the developing unit by the C / D in-transfer system and carried into a predetermined storage section in the FOUP 520 for loading or a different wafer carrier. Thereafter, in the C / D 300, for the second and subsequent wafers after exposure is completed, the same steps as those for the wafer W 1 are repeatedly performed for PEB, development, and wafer transfer. In addition, in the above description, although two-dimensional marks are used as wafer marks, as wafer marks, one-dimensional marks may sometimes be used, such as an X mark composed of a line and interval pattern with the X-axis direction as the periodic direction, and a Y mark composed of a line and interval pattern with the Y-axis direction as the periodic direction. In this case, the measurement conditions may be different when measuring the marks of the X mark and the Y mark by the mark detection system MDS. Although this state may be caused by various factors, as an example, it is assumed that, as disclosed in, for example, the specification of U.S. Patent No. 5,532,091, when aligning across a plurality of layers (multi layer) formed on a wafer in order to perform sub-layer lamination exposure, for example, the alignment in the Y-axis direction is performed with respect to the previous layer (as a reference), and the alignment in the X-axis direction is performed with respect to the layer one layer before the previous layer (as a reference). More specifically, the alignment in the Y-axis direction is performed with respect to the pattern (mark) formed on the outermost layer among the formed pattern layers of the wafer W, and the alignment in the X-axis direction is performed with respect to the pattern (mark) formed on the layer below the outermost layer. Therefore, when observing the X mark during alignment measurement, the X mark formed on the layer below the outermost layer is observed through the outermost layer on which the Y mark is formed from the upper surface of the wafer W. Therefore, the alignment measurement conditions (illumination conditions, optical conditions, signal processing algorithms, etc.) for appropriately measuring the X mark are different from the alignment measurement conditions for appropriately measuring the Y mark. Next, the use of the measurement system 500 will be described 1A measuring method for measuring the position information (coordinate position information) of the X marks and Y marks of each of the I (for example, 98) irradiation areas on a wafer by two measuring devices. FIG. 12 schematically shows the processing flow in the measuring method in this case. First, in step S202, the FOUP containing the wafer W 11 (the substrate to be measured), which houses a plurality of wafers of a certain lot, is placed on the loading port 514 of the measuring system 500 using the above-mentioned OHT or the like. 1 The plurality of wafers of a certain lot, including the wafer W housed in the FOUP, are sequentially taken out from the FOUP using a robot 516 or the like, and are sequentially transported to at least one of the measuring devices 100 11 (i = 1 to 3) using a transfer system 521 or the like. ｉ (i = 1 to 3). In addition, although one of the plurality of wafers housed in the FOUP is set as the wafer W 11 for explanation below, the same processing is performed on all of the plurality of wafers housed in the FOUP. Also, hereinafter, as an example, for the wafer W 11 after measuring the X marks with the measuring device 100 1 the case where the Y marks are measured with the measuring device 100 2 is described. Of course, it is also possible to measure the X marks with the measuring device 100 1 after measuring the Y marks. 2 After the wafer W is transported to the measuring device 100 11 in the above-described manner, in the next step S204, under the management of the control device 60 1 it is loaded onto the slider 10 of the measuring device 100 by the wafer transfer system 70 1 and the vertical movement member on the slider 10 in the same steps as in the aforementioned step S104. 1 on the slider 10 of the measuring device 100. 1 In the next step S206, the measuring device 100 1 For the wafer W 11 The measurement conditions for the X marks are set to the first predetermined condition. Hereinafter, in order to distinguish this first predetermined condition from the aforementioned first condition, the first predetermined condition is also referred to as the second condition. The second condition is a measurement condition suitable for detecting the X marks formed on the wafer W 11 Here, similarly to the above, as an alignment measurement condition (an example of the second condition), the wavelength of the illumination light in the mark detection system MDS is optimized. The X marks formed on the wafer W to be processed 11 are marks formed with the outermost layer as the lower layer (for example, the layer one layer below) of the upper layer. In order to appropriately observe this mark, it is preferable to use observation light (illumination light) having a high transmittance for the substance constituting the outermost layer. Here, such observation light is, for example, light in the red wavelength range. Therefore, the control device 60 1 sets (controls) the wavelength selection mechanism in the mark detection system MDS so as to select a filter that transmits a light beam (red light) having a wavelength of 710 to 800 nm. In the next step S208, under the set second condition, the absolute position coordinates of the I X marks on the wafer W in the XY plane are obtained as follows. That is, the control device 60 11 measures the position information of the slider 10 while using the first position measurement system 30 (and the second position measurement system 50), and measures the I X marks on the wafer W respectively using the mark detection system MDS. Based on the detection results of each of the I X marks and the absolute position coordinates (X, Y) of the slider 10 at the time of detecting each X mark, the absolute position coordinates of each of the I X marks on the wafer W in the XY plane are obtained. However, in this case, the detection light having a wavelength in the red wavelength range specified by the second condition is irradiated onto the wafer mark through the optical system of the mark detection system MDS with the light amount set to the preset light amount under the general illumination condition (σ value). The diffracted light of a predetermined number of times (for example, ±1 time) generated from the wafer mark is received by the detector, and its photoelectric conversion signal is processed according to the signal processing condition (processing formula) set to the preset, thereby obtaining the detection result of the mark for calculating the position coordinates of the wafer mark on the wafer W in the reference coordinate system. Also, at this time, the control device 60 1 measures the position information of the slider 10 while using the first position measurement system 30 (and the second position measurement system 50), and measures the I X marks on the wafer W respectively using the mark detection system MDS. 11 Based on the detection results of each of the I X marks and the absolute position coordinates (X, Y) of the slider 10 at the time of detecting each X mark, the absolute position coordinates of each of the I X marks on the wafer W in the XY plane are obtained. 11 However, in this case, the detection light having a wavelength in the red wavelength range specified by the second condition is irradiated onto the wafer mark through the optical system of the mark detection system MDS with the light amount set to the preset light amount under the general illumination condition (σ value). The diffracted light of a predetermined number of times (for example, ±1 time) generated from the wafer mark is received by the detector, and its photoelectric conversion signal is processed according to the signal processing condition (processing formula) set to the preset, thereby obtaining the detection result of the mark for calculating the position coordinates of the wafer mark on the wafer W in the reference coordinate system. 11 Also, at this time, the control device 60 1 The Abbe errors of the first position measuring system 30 in the X-axis direction and the Y-axis direction, the measurement values of the second position measuring system 50 in the X-axis direction and the Y-axis direction, which are obtained based on the measurement values of the slider 10 measured by the first position measuring system 30 in the θx direction and the θy direction, are offset, and the absolute position coordinates of each of the I X marks in the XY plane are obtained. In the next step S210, the wafer W 11 is unloaded from the slider 10 of the measuring device 100 1 without being carried out to the outside of the measuring system 500 1 and is loaded onto the slider 10 of the measuring device 100 2 . Specifically, the wafer W 11 , under the management of the control device 60 1 , with a process opposite to the loading process in step S204 (and step 104), through the wafer transfer system 70 1 and the vertical movement member on the slider 10 of the measuring device 100 1 is unloaded from the slider 10 of the measuring device 100, and then through the wafer transfer system 70 1 is transferred to the transfer member 524 (or 526), and is transported by the transfer member 524 (or 526) to the transfer position of the measuring device 100 2 . Thereafter, under the management of the control device 60 2 , with the same process as the aforementioned step S104, through the wafer transfer system 70 2 and the vertical movement member on the slider 10 of the measuring device 100, the wafer W 2 is loaded onto the slider 10 of the measuring device 100 11 . 2 On the slider 10. In the next step S212, the measuring device 100 2 sets the measurement conditions for the Y mark of the wafer W 11 to the second predetermined condition. Hereinafter, this second predetermined condition is also referred to as the third condition. The third condition is suitable for detecting the wafer W 11 Measurement conditions for the Y mark formed thereon. Here, as in the foregoing, as an alignment measurement condition (an example of the third condition), optimization of the wavelength of the illumination light in the mark detection system MDS is performed. The Y mark formed on the wafer W to be processed 11 is a mark formed on the outermost layer, and there is no need to limit the wavelength of the special observation light (illumination light) for observing this mark. As long as it is observed with broadband white light emitted from an illumination source such as a halogen lamp. Therefore, the control device 60 2 sets (controls) the wavelength selection mechanism by selecting a filter that transmits a light beam (white light) with a wavelength of 530 to 800 nm in the wavelength selection mechanism of the mark detection system MDS. In the next step S214, under the third condition set by the control device 60 2 the absolute position coordinates of the I Y marks of the wafer W 11 in the XY plane are obtained in the same manner as the absolute position coordinates of the X mark in the XY plane in step S208. At this time, the control device 60 2 sets as offsets the Abbe errors of the first position measurement system 30 in the X-axis direction and the Y-axis direction, and the measurement values of the second position measurement system 50 in the X-axis direction and the Y-axis direction, which are obtained based on the measurement values of the slider 10 in the θx direction and the θy direction measured by the first position measurement system 30, and obtains the absolute position coordinates of each of the I Y marks in the XY plane. As described above, the three measuring devices 100 1 ~100 3 are adjusted in such a way that substantially the same measurement results can be obtained when, for example, one wafer in one lot is measured by each of the three measuring devices 100 1 ~100 3 under the same conditions. Therefore, in the next step S216, the measurement system control device 530 1 (or the control device 60 2, based on the absolute position coordinates of the X mark obtained in step S208 and the absolute position coordinates of the Y mark obtained in step S214, through statistical operations (EGA operations) such as the least squares method in the same way as in step S114 above, the coefficient a of the above formula (1) is obtained 0 , a 1 , …, b 0 , b 1 , …. Hereinafter, in the same way as the flowchart of FIG. 11, after the measurement process of the wafers in the batch of the measurement object is completed, a series of processes are terminated. As described above, in this example, it is possible to measure the X marks of all the wafers in the batch under the second condition in the measuring device 100 1 and measure the Y marks of all the wafers in the batch under the third condition in the measuring device 100 2 . Therefore, the measuring device 100 1 and the measuring device 100 2 can correctly measure the marks of the measurement object without changing the respective measurement conditions until the measurement of all the wafers in the batch of the measurement object is completed. The measurement system control device 530 1 , after the measurement of all the wafers included in one batch is completed, immediately sends the information of the wafer gratings (alignment history data files) of the plurality of wafers included in the batch to the host computer 2000. Of course, the information of the wafer gratings (alignment history data files) sent from the measurement system 500 1 also includes the data of the non-linear components of the wafer gratings. In addition, it is also possible to connect the control device 60 of the measuring device 100 ｉ to the host computer 2000 through the LAN 1500, and send the information of the wafer gratings (alignment history data files) from the control device 60 ｉ to the host computer 2000 without passing through the measurement system control device 530 1 and ｉ . Furthermore, in this embodiment, although it is from the measurement system 500 1Send (output) information of the wafer grid, but from the measurement system 500 1 The information (data) sent is not limited to this. For example, the coordinate position information of the wafer mark (X mark) measured by the measuring device 100 ｉ and the coordinate position information of the wafer mark (Y mark) can be sent (output) as at least a part of the alignment history data of each wafer. In addition, in the measurement system 500 1 the measuring device 100 1 acquires the absolute position coordinates of the X mark of a certain wafer included in the batch to be measured, and the measuring device 100 2 acquires the absolute position coordinates of the Y mark of another wafer included in the batch to be measured, and at least a part of them can be performed in parallel. In this case, the measurement time for all the wafers to be measured included in the batch to be measured can be shortened. Also, in the above description, although the wafer with the X mark and the Y mark formed on different layers is used as the measurement object, the X mark and the Y mark can also be formed on the same layer. In this case as well, when the measurement conditions suitable for detecting the X mark and the measurement conditions suitable for detecting the Y mark are different, for example, the measuring device 100 1 acquires the absolute position coordinates of the X mark, and the measuring device 100 2 acquires the absolute position coordinates of the Y mark. In addition, as described above, since the measuring device 100 ｉ is equipped with the first position measurement system 30, by performing the origin search of the orthogonal coordinate system (reference coordinate system) defined by the ranging axis of the first position measurement system 30, the absolute position from the slider 10, and further the position information of the slider 10 and the detection result of the mark detection system MDS can be obtained. The absolute position of the wafer mark on the wafer W held on the slider 10, such as the overlay measurement mark (registration mark), is managed in the reference coordinate system. That is, the measuring device 100 ｉ can also function as an overlay measuring instrument. In addition, the so-called "absolute position" in this specification means the coordinate position in the reference coordinate system. Therefore, the measuring device 100 of the measurement system 500 1 can also ｉ At least one of (i = 1 to 3) functions as a superposition measuring device. However, in this embodiment, the measurement system 500 1 For each measuring device 100 ｉ , since the wafer before the previous step of the wafer processing is completed and before the resist is applied is used as the measurement object for the above-mentioned measurement, the above-mentioned measurement is also performed. Therefore, it is also possible to perform the above-mentioned measurement in parallel with each measuring device 100 of this measurement system 500 1 For each measuring device 100 ｉ For a certain batch of wafers, while measuring, for another batch of wafers, perform superposition measurement and the like with the measurement system 500 2 Execute superposition measurement, etc. Next, a superposition measurement method using two measuring devices of another measurement system 500 2 is described. FIGS. 13 and 14 schematically show the processing flow in the superposition measurement method in this case. First, in step S302, a wafer (assumed to be wafer W 11 ) included in a certain batch is carried into the coating unit of C / D300, and the wafer W after the first layer (lower layer) has been exposed by the exposure device 200 or an exposure device different from the exposure device 200, such as a scanner or a stepper 11 is coated with a resist. On the wafer W before the resist is applied 11 , a plurality of, for example, I (I is, for example, 98) irradiation regions, and wafer marks whose designed positional relationship with the irradiation regions is known and a first mark for measuring the superposition deviation (more precisely, the resist image of the first mark (also appropriately referred to as the first mark image)) are formed corresponding to each irradiation region by the exposure of the lower layer. In this case, the designed positional relationship of each of the I first mark images is also known. Next, in step S304, the wafer W coated with the resist 11 , via the same predetermined processing process as the above-mentioned wafer W 1 , is loaded on the wafer stage WST of the exposure device 200. Specifically, the wafer W 11 , after being heat-treated (PB) by the baking unit and temperature-adjusted by the temperature-adjusting unit 330, etc., is loaded on the wafer stage WST. Next, in step S306, by means of the exposure control device 220 of the exposure device 200, the wafer W on the wafer stage WST 11 , the same search alignment as described above is performed using the alignment detection system AS, and wafer alignment in the EGA method in which, for example, about 3 to 16 irradiation regions are set as alignment irradiation regions is performed. In addition, before step S302, as previously described, the measuring device 100 of the measuring system 500 1 is used to ｉ obtain the information of the wafer grating of the wafer W 11 for i = 1 to 3, and provide it to the exposure control device 220 of the exposure device 200. Next, in step S308, by means of the exposure control device 220, based on the result of the wafer alignment, the correction amounts (alignment correction components) dx and dy of the position coordinates of each irradiation region represented by the above formula (3) are obtained, and based on this correction amount, the positioning target positions when each irradiation region of the wafer grating is exposed are determined. In addition, before step 302, the information of the wafer grating of the wafer W may not be obtained by the measuring device 100 of the measuring system 500 1 but only the result of wafer alignment in the EGA method in which, for example, about 3 to 16 irradiation regions are set as alignment irradiation regions using the alignment detection system AS is used to determine the positioning target positions when each irradiation region is exposed. ｉ to obtain the information of the wafer grating of the wafer W 11 Next, in step S310, while controlling the position of the wafer stage WST according to the positioning target position by the exposure device 200, the second layer (the upper layer with the first layer as the lower layer) is exposed to each irradiation region on the wafer W 11 in a step-and-scan manner. At this time, the exposure device 200 uses a reticle (referred to as reticle R for convenience of explanation) on which a second mark is formed corresponding to the first mark image on the wafer W 11 to perform the exposure. Therefore, by this second-layer exposure, the reticle R is superposed on the I irradiation regions on the wafer W 11 11 11The pattern area is transferred, and a transfer image of I second marks is formed and arranged in a positional relationship corresponding to the positional relationship with the I first marks. Next, in step S312, the wafer W on which the exposure of the second layer is completed 11 , after going through the same processing procedure as the aforementioned exposed wafer W 1 is carried into the developing unit of the C / D 300. Specifically, the wafer W 11 is transported to the unloading-side substrate placement unit of the substrate transfer unit by the wafer transfer system 270, carried into the baking unit of the C / D 300 from the unloading-side substrate placement unit by the in-C / D transfer system, and PEB is performed by the baking device in the baking unit. The wafer W after the completion of PEB 11 is taken out from the baking unit by the in-C / D transfer system and carried into the developing unit. Next, in step S314, the wafer W on which the transfer images of a plurality of second marks are formed 11 is developed by the developing device in the developing unit. By this development, on the wafer W 11 , I irradiation areas are formed, and I groups of a first mark image and a corresponding second mark image are formed in a predetermined positional relationship, becoming a substrate to be measured during overlay measurement. That is, in this way, a substrate (overlay measurement target substrate) to be measured during overlay measurement is produced. Here, as a group of a first mark image and a corresponding second mark image, an antireflective image of a box-in-box mark composed of, for example, an outer box mark and an inner box mark arranged inside it can be used. Next, in step S316, the FOUP containing a plurality of wafers of a certain lot including the developed wafer W 11 (the substrate for overlay measurement) is taken out from the C / D 300 and placed on the loading port 514 of the measurement system 500 2 using the above-mentioned OHT, etc. That is, a plurality of wafers of a certain lot including the wafer W in the FOUP taken out from the C / D 300 11 are transported to the measurement system 500 before the process treatment (etching treatment or film formation treatment after etching treatment (including at least one of sputtering treatment, CVD treatment, and thermal oxidation treatment)) performed after the development process. 2 . The wafer W accommodated in the FOUP 11 For a plurality of wafers of a certain lot, they are sequentially taken out from the FOUP using a robot 516 or the like, and are sequentially transported to the measuring device 100 using a transport system 521 or the like. ｉ At least one of (i = 4 to 6). In addition, although one of the plurality of wafers accommodated in the FOUP is described as wafer W below, 11 the same processing is performed on all or part of the plurality of wafers accommodated in the FOUP. Also, below, as an example, it describes the case of performing measurement of the first marker image on wafer W 11 (the substrate to be measured during the overlay measurement) using the measuring device 100 4 and performing measurement of the second marker image using the measuring device 100. 5 Wafer W 11 After being transported to the measuring device 100 in the above-described manner, 4 in the next step S318, under the management of the control device 60, 4 it is loaded onto the slider 10 of the measuring device 100 by the wafer transfer system 70 4 and the vertical movement member on the slider 10 in the same process as the aforementioned step S104. 4 on the slider 10 of the measuring device 100. In the next step S320, the measuring device 100 4 sets the measurement conditions for the first marker image of wafer W 11 to the first predetermined conditions. Hereinafter, in order to distinguish this first predetermined condition from the aforementioned first condition, the first predetermined condition is also referred to as the second condition. The second condition is a measurement condition suitable for detecting the first marker image formed on wafer W by the exposure of the first layer. Here, similar to the above, as an alignment measurement condition (an example of the second condition), optimization of the wavelength of the illumination light in the marker detection system MDS is performed. Formed on the wafer W to be processed 11 11 ​​The first marker image is a marker formed by the first layer (the second layer (the outermost layer) as the lower layer of the upper layer (for example, the layer one layer below)). In order to appropriately observe this marker, it is preferable to use observation light (illumination light) having a high transmittance for the material constituting the outermost layer. Here, such observation light is, for example, light in the red color range. Therefore, the control device 60 4 sets (controls) the wavelength selection mechanism of the marker detection system MDS in such a way as to select a filter that transmits a light beam (red light) having a wavelength of 710 to 800 nm. In the next step S322, under the set second condition, the wafer W 11 has the absolute position coordinates of the I first marker images in the XY plane obtained in the following manner. That is, the control device 60 4 measures the position information of the slider 10 using the first position measurement system 30 (and the second position measurement system 50), and at the same time, uses the marker detection system MDS to separately detect the I first marker images on the wafer W 11 Based on the detection results of each of the I first marker images and the absolute position coordinates (X, Y) of the slider 10 at the time of detection of each first marker image, the absolute position coordinates of each of the I first marker images on the wafer W 11 in the XY plane are obtained. However, in this case, the detection light having a wavelength in the red color range specified by the second condition is set to a preset light amount, and the optical system of the marker detection system MDS is irradiated onto the wafer marker using general illumination conditions (σ value). The diffracted light of a predetermined number of times (for example, ±1 time) generated from the wafer marker is received by the detector, and its photoelectric conversion signal is processed according to the preset signal processing conditions (processing formula), thereby obtaining the detection result of the marker for calculating the position coordinates of the wafer marker on the wafer W 11 in the reference coordinate system. Also, at this time, the control device 60 4 sets as offsets the Abbe errors of the first position measurement system 30 in the X-axis direction and the Y-axis direction and the measurement values of the second position measurement system 50 in the X-axis direction and the Y-axis direction obtained based on the measurement values of the slider 10 in the θx direction and the θy direction measured by the first position measurement system 30, and obtains the absolute position coordinates of each of the I first marker images in the XY plane. In the next step S324, the wafer W 11 is removed from the measuring device 100 4unloaded onto the slider 10 without being taken out to the measurement system 500 2 loaded onto the measuring device 100 from the outside 5 onto the slider 10. Specifically, the wafer W 11 , under the management of the control device 60 1 , with a process opposite to the loading process in step S318 (and step 104), by the wafer transfer system 70 4 and the vertical movement member on the slider 10, unloaded from the measuring device 100 4 from the slider 10 of the measuring device 100, and then transferred to the transfer member 524 (or 526) by the wafer transfer system 70 4 and transported to the transfer position with respect to the measuring device 100 by the transfer member 524 (or 526). Thereafter, under the management of the control device 60 5 , with a process the same as that of the aforementioned step S104, by the wafer transfer system 70 5 and the vertical movement member on the slider 10 of the measuring device 100, the wafer W 5 is loaded onto the slider 10 of the measuring device 100 5 . 11 On the slider 10 of the measuring device 100. 5 In the next step S326, the measuring device 100 5 sets the measurement conditions for the second mark image of the wafer W 11 to the second predetermined conditions. Hereinafter, this second predetermined condition is also referred to as the third condition. The third condition is a measurement condition suitable for detecting the second mark image formed on the wafer W 11 by the exposure of the second layer. Here, similar to the above, as an alignment measurement condition (an example of the third condition), the wavelength of the illumination light in the mark detection system MDS is optimized. Formed on the wafer W to be processed 11The second marked image is a mark formed on the second layer (the outermost layer), and there is no need to limit the wavelength of the special observation light (illumination light) for observing this mark. It is only necessary to observe with broadband white light emitted by an illumination light source such as a halogen lamp. Therefore, the control device 60 5 sets (controls) the wavelength selection mechanism by means of a filter that transmits a light beam (white light) with a wavelength of 530 to 800 nm in the wavelength selection mechanism of the mark detection system MDS. In the next step S328, under the third condition set by the control device 60 2 the absolute position coordinates in the XY plane of the I second marked images of the wafer W 11 are obtained in the same manner as the absolute position coordinates in the XY plane of the second marked image in step S322. At this time, the control device 60 5 sets as offsets the Abbe errors in the X-axis direction and Y-axis direction of the first position measurement system 30 obtained based on the measurement values of the slider 10 in the θx direction and θy direction measured by the first position measurement system 30, and the measurement values of the second position measurement system 50 in the X-axis direction and Y-axis direction, and obtains the absolute position coordinates in the XY plane of each of the I second marked images. In the next step S330, the measurement system control device 530 2 (or the control device 60 5 ) obtains the overlay error (overlay deviation) between the first layer and the second layer based on the absolute position coordinates of the mutually grouped first marked images and the absolute position coordinates of the second marked images. In the next step S332, the measurement system control device 530 2 (or the control device 60 5 ) determines which of the exposure of the first layer or the exposure of the second layer the overlay error mainly results from based on the absolute position coordinates of the I first marked images and the absolute position coordinates of the I second marked images in the following manner. That is, the measurement system control device 530 2 (or the control device 60 5 ) obtains the deviation amounts (ΔX1 ｉ , ΔY1 ｉ)(i = 1 to I), the deviation amount (ΔX2 ｉ , ΔY2 ｉ )(i = 1 to I) from the designed position coordinates of the absolute position coordinates of the first and second marker images, for ΔX1 ｉ , ΔX2 ｉ , ΔY1 ｉ , ΔY2 ｉ , the sum ΣΔX1 for each of i = 1 to I is obtained ｉ , ΣΔX2 ｉ , ΣΔY1 ｉ , ΣΔY2 ｉ . Next, the measurement system control device 530 2 (or the control device 60 5 ), when ΣΔX1 ｉ > ΣΔX2 ｉ and ΣΔY1 ｉ > ΣΔY2 ｉ , it is determined that the overlay error is mainly caused by the exposure of the first layer in both the X-axis direction and the Y-axis direction. When ΣΔX1 ｉ < ΣΔX2 ｉ and ΣΔY1 ｉ < ΣΔY2 ｉ , it is determined that the overlay error is mainly caused by the exposure of the second layer in both the X-axis direction and the Y-axis direction. Also, the measurement system control device 530 2 (or the control device 60 5 ), when ΣΔX1 ｉ > ΣΔX2 ｉ and ΣΔY1 ｉ < ΣΔY2 ｉ In the case where it is determined that the overlay error in the X-axis direction is mainly due to the exposure of the first layer and the overlay error in the Y-axis direction is mainly due to the exposure of the second layer, when ΣΔX1 ｉ < ΣΔX2 ｉ and ΣΔY1 ｉ > ΣΔY2 ｉ In this case, it is determined that the overlay error in the X-axis direction is mainly due to the exposure of the second layer and the overlay error in the Y-axis direction is mainly due to the exposure of the first layer. In addition, the above judgment method is only an example. Briefly speaking, as long as the measurement system control device 530 2 (or the control device 60 5 ) determines which of the exposure of the first layer and the exposure of the second layer the overlay error is mainly due to based on the absolute position coordinates of the I first marker images and the absolute position coordinates of the I second marker images, and any specific judgment method can be used. In addition, in parallel with the processing of steps S330 and S332, for the wafer W on which the measurement of the absolute position coordinates of the I second marker images in the XY plane in step S328 has been completed 11 , it is transferred to the transfer member 526 by the wafer transfer system 70 5 and is transferred to the unloading side wafer transfer position by the transfer member 526, and then returned to the predetermined FOPU 520 by the robot 516. The data of the overlay error (overlay deviation) of the wafer W obtained through the above overlay measurement method, and the data of the judgment result of which of the exposure of the first layer and the exposure of the second layer the overlay error is mainly due to, are fed back to at least one of the exposure device that has performed the exposure of the first layer and the exposure device 200 that has performed the exposure of the second layer by the measurement system control device 530 11 (or the control device 60 2 ). 5 For example, when the main cause of the overlay error is the exposure of the first layer, the data can also be fed back to the exposure device that has performed the exposure of the first layer. Then, when using this exposure device to process wafers including wafer W 11 ​For wafers included in another batch with a different batch number, when performing the same exposure process as the first layer of wafer W, the target alignment position can also be determined based on the feedback data in a manner that reduces the overlay error with the second layer. 11 Also, when the main cause of the overlay error is the exposure of the second layer, the data can be fed back to the exposure device 200 that has performed the exposure of the second layer. Then, when using the exposure device 200 to perform an exposure process on wafers included in another batch with a different batch number from the batch containing wafer W 11 For wafers included in another batch with a different batch number, when performing the same exposure process as the second layer of wafer W 11 the target alignment position can also be determined based on the feedback data in a manner that reduces the overlay error with the first layer. In addition, the feedback of the data can also be performed through the host computer 2000. Also, in at least one of steps S322 and S328, when obtaining the absolute position coordinates of two or more marks on the entire irradiation area of wafer W 11 and being able to obtain at least one of the first information related to the shape and size of each irradiation area of the first layer and the second information related to the shape and size of each irradiation area of the second layer, the first information can be provided (fed back) to the exposure device that has exposed the first layer, and the second information can be provided (fed back) to the exposure device 200 that has exposed the second layer. In this case, the imaging characteristic correction controller 248 can also be controlled in a manner that the shape and size of each irradiation area of the second layer become the desired state, or at least one of the speed and direction of the reticle stage RST can be controlled. In addition, in the above description, although the overlay error (overlay deviation) between the first layer and the second layer is obtained based on the absolute position coordinates of the first mark image and the absolute position coordinates of the second mark image, the data of the absolute position coordinates of the first mark image and the data of the absolute position coordinates of the second mark image can also be used as information on the overlay error (position deviation between the first layer and the second layer) between the first layer and the second layer and output from the measurement system 500 2 Output. In this case, the data output from the measurement system 500 2 can also be provided (fed back) to at least one of the exposure device (exposure device 200 or another exposure device) that has performed the exposure of the first layer and the exposure device 200 that has performed the exposure of the second layer. Alternatively, based on the absolute position coordinates of the first marker image and the absolute position coordinates of the second marker image, the positional deviations between the first marker image and the second marker image that are mutually organized can be separately obtained, and the data of these positional deviations can be used as information on the overlay error (positional deviation between the first layer and the second layer) between the first layer and the second layer from the measurement system 500 2 Output. Similarly in this case, the data output from the measurement system 500 2 can also be provided (fed back) to at least one of the exposure device that has performed the exposure of the first layer (exposure device 200 or another exposure device) and the exposure device 200 that has performed the exposure of the second layer. In addition, in accordance with the processing formulas of the flowcharts in FIGS. 13 and 14, for all overlay measurement target substrates (wafer W 11 ) included in the same batch, when the absolute position coordinates of the first marker image are measured by the measuring device 100 in step S322 4 although the absolute position coordinates of the second marker image are measured by the measuring device 100 for the overlay measurement target substrate in step S328 5 for a part of the measurement target substrates in the batch, the measurement of the absolute position coordinates of the second marker image using the measuring device 100 may not be performed. 5 In addition, it is also possible to obtain the absolute position coordinates of K first marker images that are less than I in step S322 and the absolute position coordinates of K second marker images in step S328. From the above description, it can be clearly understood that according to the overlay measurement method performed by the substrate processing system 1000, the measurement system 500 2 can separately measure the absolute position coordinates of the first marker image and the absolute position coordinates of the second marker image, and can measure the overlay error based on these absolute position coordinates. Moreover, an excellent effect that has never been seen before can be obtained, that is, it is possible to specify that the overlay error is mainly caused by the exposure of the lower layer or mainly caused by the exposure of the upper layer. In addition, in step S330 above, since the overlay error (overlay deviation) between the first layer and the second layer is obtained, step S332 can be executed as necessary. ​In addition, in the above description, although markers for measuring the overlay deviation (the first marker image and the second marker image) are used to obtain the overlay error between the first layer and the second layer, wafer markers (alignment markers) can also be used. That is, the overlay error between the first layer and the second layer can also be obtained from the absolute position coordinates of the I wafer markers in the first layer and the absolute position coordinates of the I wafer markers in the second layer. Furthermore, since the wafer markers and the markers for measuring the overlay deviation (the first marker image and the second marker image) differ in shape, size, etc., the optimal measurement conditions including the irradiation conditions are different. Therefore, for the plurality of wafers included in the same batch (the batch to be measured), in the aforementioned step S320, instead of the wafer W 11 the measurement conditions for the first marker image, the measurement conditions suitable for measuring the resist image of the wafer marker on the wafer are set as the first predetermined conditions, and in step S322, the absolute position coordinates of the resist image of the wafer marker are obtained under the first predetermined conditions. Also, for the wafer for which the absolute position coordinates of the resist image of the wafer marker have been obtained, in the aforementioned step S326, the measurement conditions suitable for measuring at least one of the markers for measuring the overlay deviation (the first marker image and the second marker image) can be set as the second predetermined conditions, and in step S328, the absolute position coordinates of the marker for measuring the overlay deviation are obtained under the second predetermined conditions. Therefore, according to the processing flow of the flowcharts in FIGS. 13 and 14, for the plurality of wafers included in the batch to be measured, high-precision position measurement can also be performed on either the resist image of the wafer marker or the marker for measuring the overlay deviation. Furthermore, in the above description, after the exposure process of the second layer, the measurement device 100 of the measurement system 500 2 is used to obtain the absolute position coordinates of the developed wafer W 4 for the first marker image (or the wafer marker of the first layer), and the absolute position coordinates of the second marker image (or the wafer marker of the second layer) are obtained using the measurement device 100. However, this is not limited thereto. It is also possible to use the measurement device 100 of the measurement system 500 after the exposure process of the first layer and before the exposure process of the second layer 11 to obtain the absolute position coordinates of the developed wafer W 5 for the first marker image (or the wafer marker of the first layer), and after the exposure process of the second layer, use the measurement device 100 of the measurement system 500 2 to obtain the absolute position coordinates of the second marker image (or the wafer marker of the second layer). 4 to obtain the absolute position coordinates of the developed wafer W 11 for the first marker image (or the wafer marker of the first layer), and after the exposure process of the second layer, use the measurement device 100 of the measurement system 500 5 Obtain the wafer W after development is completed 11 The absolute position coordinates of the second marker image (or the wafer marker of the second layer). In this case, the overlay error between the first layer and the second layer can also be measured by the measurement system 500 2 (control device 60 5 or the measurement system control device 530 2 ) is obtained, or can be obtained by another device (such as the main computer 2000). Also, in order to perform the exposure process for the next layer of the second layer, it is possible to move the wafer W 11 through various processes (including etching and film formation processes) and before moving it into the C / D 300 (or another C / D), move the wafer W 11 into the measurement system 500 1 or the measurement system 500 2 , and use any measurement device 100 ｉ (any one of i = 1 to 6), to obtain both the absolute position coordinates of the first marker image (or the wafer marker of the first layer) of the wafer W 11 and the absolute position coordinates of the second marker image (or the wafer marker of the second layer), or the absolute position coordinates of the second marker image (or the wafer marker of the second layer) of the wafer W 11 . Similarly in this case, the overlay error (position deviation between the first layer and the second layer) between the first layer and the second layer can also be measured by the measurement system 500 1 or the measurement system 500 2 to obtain the overlay error (position deviation between the first layer and the second layer) between the first layer and the second layer, or provide the information of the absolute position coordinates obtained by the measurement system 500 1 or the measurement system 500 2 to another device (such as the main computer 2000), and use that other device to obtain the overlay error (position deviation between the first layer and the second layer) between the first layer and the second layer. Also, it is possible to use the measurement system 500 1 or the measurement system 500 2Information on the superposition error (position deviation between the first layer and the second layer) of the obtained first layer and the second layer, or using the measurement system 500 1 or the measurement system 500 2 Information on the absolute position coordinates obtained is provided to the exposure device 200 or another exposure device. In addition, in the above description, although information on the superposition error between the first layer and the second layer is obtained, it is not limited to this. Information on the superposition error between the m-th layer (lower layer, m is an integer of 1 or more) and the n-th layer (upper layer, n is greater than m and is an integer of 2 or more) can also be obtained. In this case, the n-th layer may not be the next layer of the m-th layer. As described above, according to the substrate processing system 1000 of the present embodiment, by the measurement system 500 1 、the measurement system 500 2 、each of the lithography systems including the exposure device 200 and the C / D 300 continuously processes a plurality of wafers. In the substrate processing system 1000, the measurement system 500 1 The aforementioned measurement process on the wafer of the aforementioned measurement object, the processing of the lithography system on the wafer after the measurement through the measurement system 500 1 (resist coating, exposure, and development), and the measurement process on the wafer after the processing of the lithography system are performed independently of each other. Therefore, although there is a limitation such as performing the processing of the lithography system on the wafer after the measurement process through the measurement system 500 1 ending the measurement process, and performing the measurement system 500 on the wafer after the processing of the lithography system 2 of the measurement process, the overall processing schedule can be determined so that the overall productivity of the substrate processing system 1000 is maximized. Furthermore, according to the substrate processing system 1000, independently of the processing operation of the exposure device 200 for the target wafer including the aforementioned simple EGA measurement and exposure, by the measurement system 500 1 the measuring device 100 ｉ performs the alignment measurement of the target wafer, and an efficient process that can almost not reduce the productivity of the wafer processing of the exposure device 200 can be executed. Also, as a whole of the substrate processing system 1000, the exposure device 200 can also perform in parallel with the measurement by the measurement system 500 1 the measuring device 100 ｉ Alignment and exposure processing of a certain batch of wafers that have been previously measured, measurement system 500 1 Measurement device 100 of ｉ Measurement processing of another batch of wafers, and measurement system 500 2 Measurement processing of yet another batch of wafers that have completed the processing of the lithography system, thereby enabling an efficient process that hardly reduces the throughput of wafer processing. Also, in measurement system 500 1 The entire irradiation area is set to the entire irradiation area EGA of the sampling irradiation area, and it is also possible to perform it on another batch of wafers in parallel with the wafer alignment and exposure operations of the exposure device 200 for a certain batch of wafers. Also, measurement system 500 1 Measurement device 100 of ｉ (i = 1 to 3) performs the entire irradiation area EGA where the entire irradiation area is set to the sampling irradiation area before the wafer alignment and exposure operations of the same batch of wafers after the process processing (etching, oxidation / diffusion, film formation, ion implantation, planarization (CMP), etc.) in the pre-wafer processing step of the exposure device 200 (more precisely, before the resist coating on the wafer), and obtains alignment history data including information on the wafer grating (for example, data on the deformation components of the wafer grating) for each wafer obtained by alignment measurement. Regarding the obtained alignment history data for each wafer, it is stored in the internal memory device by the measurement system control device 530 for each wafer. Therefore, the exposure device 200 can effectively utilize the alignment history data including information on the wafer grating of the target wafer obtained by using the measurement system control device 530, and perform wafer alignment and exposure on the target wafer. That is to say, in the substrate processing system 1000 of the present embodiment, the alignment history data including information on the wafer grating (for example, data on the deformation components of the wafer grating) of the target wafer obtained by the pre-measurement processing of the measurement device 100 of the measurement system 500 (i = 1 to 3) is substantially transmitted (provided) to the exposure device 200 in a feedback manner. 1 Stored in the internal memory device. Therefore, the exposure device 200 can effectively utilize the alignment history data including information on the wafer grating of the target wafer obtained by using the measurement system control device 530 1 And perform wafer alignment and exposure on the target wafer. That is to say, in the substrate processing system 1000 of the present embodiment, the measurement system 500 includes the measurement device 100 1 Of ｉ (i = 1 to 3) The alignment history data including information on the wafer grating (for example, data on the deformation components of the wafer grating) of the target wafer obtained by the pre-measurement processing is substantially transmitted (provided) to the exposure device 200 in a feedback manner. Also, with measurement device 100 ｉ The coefficients of the higher-order components in the model obtained from the entire irradiation region EGA in the pre-measurement process (i = 1 to 3) can be directly used in the exposure apparatus 200. Therefore, in the exposure apparatus 200, only the alignment measurement with several irradiation regions set as the alignment irradiation regions is performed to obtain the coefficients of the lower-order components of the above model, and the coefficients of the lower-order components and the coefficients of the higher-order components obtained by the measurement apparatus 100 are used. ｉ By this, not only the coefficients of the lower-order components (undetermined coefficients) of the model (1), but also the coefficients of the higher-order components (undetermined coefficients) can be determined. Using the model (1) (i.e., the above formula (3)) with the determined undetermined coefficients and the design values (X, Y) of the arrangements of a plurality of irradiation regions on the wafer, the correction amount of each irradiation region from the designed position can be obtained. By this, a better correction amount with the same accuracy as when obtaining the coefficients of the lower-order and higher-order components of the model (1) by the exposure apparatus 200 can be obtained. Next, based on this correction amount and the design values of the arrangements of a plurality of irradiation regions on the wafer, the positioning target positions at the time of exposure of each irradiation region can be calculated. Therefore, by controlling the position of the wafer stage WST according to this target position, each irradiation region can be aligned with the exposure position (the projection position of the reticle pattern) with good accuracy. By this, without reducing the productivity of the exposure apparatus 200, the overlay accuracy of the image of the pattern on the reticle at the time of exposure and the pattern formed in each irradiation region on the wafer can be improved. Also, according to the measurement apparatus 100 of the present embodiment ｉ (i = 1 to 6), the control device 60 ｉ controls the movement of the slider 10 caused by the drive system 20 while using the first position measurement system 30 and the second position measurement system 50 to obtain the position information of the slider 10 relative to the fixed disk 12, the relative position information between the mark detection system MDS and the fixed disk 12, and uses the mark detection system MDS to obtain the position information of a plurality of marks formed on the wafer W. Therefore, according to the measurement apparatus 100 ｉ the position information of a plurality of marks formed on the wafer W can be obtained with good accuracy. Also, according to the measurement apparatus 100 of the present embodiment ｉ (i = 1 to 6), the control device 60 ｉ, the measurement information of the second position measurement system 50 (the relative position information of the stator 12 and the mark detection system MDS) is obtained at any time, and the position relationship between the detection center of the mark detection system MDS and the detection point of the first position measurement system 30 of the position information of the slider 10 relative to the stator 12 in the six-degree-of-freedom direction is maintained at the nm level in the desired relationship. The position of the stator 12 in the six-degree-of-freedom direction is instantaneously controlled by three vibration isolation devices 14 (actuators). Also, the control device 60 ｉ , while controlling the drive of the slider 10 caused by the drive system 20, the measurement information of the first position measurement system 30 (the position information of the slider 10 relative to the stator 12) and the measurement information of the second position measurement system 50 (the relative position information of the stator 12 and the mark detection system MDS) are obtained. Based on the detection signal when detecting the mark formed on the wafer W using the mark detection system MDS, the measurement information of the first position measurement system 30 obtained when detecting the mark formed on the wafer W using the mark detection system MDS, and the measurement information of the second position measurement system 50 obtained when detecting the mark formed on the wafer W using the mark detection system MDS, the position information of a plurality of wafer marks is obtained. Therefore, according to the measuring device 100 ｉ , the position information of a plurality of marks formed on the wafer W can be obtained with good accuracy. In addition, for example, in the case of performing an EGA operation without using the position information of the measured mark, or in the case of performing position control of the wafer W (wafer stage WST) during exposure based on the position information of the measured mark, etc., the measurement information of the second position measurement system 50 described above may not be used for calculating the position information of the mark. However, in this case, as long as the measurement information of the second position measurement system 50 obtained when detecting the mark formed on the wafer W using the mark detection system MDS is used as an offset, information such as the movement of the wafer W for correcting the positioning target value of the wafer W (wafer stage WST) can be corrected. Alternatively, the movement of the reticle R (reticle stage RST) during exposure can also be controlled in consideration of the above offset. Also, according to the measuring device 100 of the present embodiment ｉ (i = 1 to 6), the first position measurement system 30 that measures the position information of the slider 10 that mounts and holds the wafer W in the six-degree-of-freedom direction, since at least the wafer mark on the wafer W is detected by the mark detection system MDS, within the moving range of the slider 10, the measurement beam can be continuously irradiated from the reading head 32 onto the grating RG1. Therefore, the first position measurement system 30 can continuously measure its position information over the entire range in the XY plane where the slider 10 moves for mark detection. Therefore, for example, in the measuring device 100 ｉ In the manufacturing stage (including the stage of starting up the equipment in a semiconductor manufacturing factory), by performing a search for the origin of an orthogonal coordinate system (reference coordinate system) defined by the ranging axis of the first position measurement system 30, it is possible to manage the absolute position of the slider 10 on the reference coordinate system. Furthermore, based on the position information of the slider 10 and the detection result of the mark detection system MDS, the absolute position of the mark (not limited to the search mark and wafer mark, but also including other marks, such as overlay measurement marks (including alignment marks)) on the wafer W held on the slider 10 can be obtained. From the description so far, it is clear that the substrate processing system 1000 of this embodiment, by including the measurement system 500 1 , 500 2 , even if the exposure apparatus 200 only has the function of performing a simple EGA measurement (for example, obtaining the position information of about 3 to 16 wafer marks of the alignment system AS) to find the linear component of the correction amount of the position coordinates of the wafer within a predetermined time (the time allowed to maintain the required high productivity), it is also possible to use the low-order component of the deformation of the wafer grating obtained by performing this simple EGA measurement and the high-order component of the deformation of the wafer grating obtained by the full-point EGA (for example, obtained in advance by the measurement system 500 1 (or the measurement system 500 2 ) to accurately find the deformation of the wafer grating. Therefore, by the measurement system 500 1 (or the measurement system 500 2 ), the grating correction function of the exposure apparatus 200 can be substantially improved. Therefore, even with an exposure apparatus that does not have the most advanced grating correction function, high-precision exposure can be performed on the wafer with high productivity or without reducing the productivity. In addition, although it has been described that in the substrate processing system 1000 of the above embodiment, the measuring device 100 ｉ , the C / D 300, and the exposure apparatus 200 are equipped with barcode readers, it is also possible to replace the barcode readers with a device for writing / readout of RFID tags of wireless IC tags. In this case, RFID tags are installed on each wafer, and the measuring device 100 ｉUsing the write / read device, the alignment history data is written into the RFID tag for each wafer, and other devices, such as the exposure device 200, use the write / read device to read the alignment history data from the RFID tag of the target wafer, whereby the feedback transmission of the alignment history data regarding the target wafer can be simply achieved. Also, in the substrate processing system 1000 of the above-described embodiment, it has been described that the exposure device 200 obtains the coefficients of the low-order components of the first order or less of the above model formula, and uses the coefficients of this low-order component and the measuring device 100 ｉ The case of obtaining the coefficients of the high-order components of the second order or more of the above model formula. However, it is not limited to this. For example, the coefficients of the components of the second order or less of the above model formula may be obtained from the detection results of the alignment marks in the exposure device 200, and the coefficients of the components of the second order or less are used and the measuring device 100 ｉ The coefficients of the high-order components of the third order or more of the above model formula obtained. Or, for example, the coefficients of the components of the third order or less of the above model formula may be obtained from the detection results of the alignment marks in the exposure device 200, and the coefficients of the components of the third order or less are used and the measuring device 100 ｉ The coefficients of the high-order components of the fourth order or more of the above model formula obtained. That is, the coefficients of the components of the (N - 1)th order (N is an integer of 2 or more) or less of the above model formula are obtained from the detection results of the alignment marks in the exposure device 200, and the coefficients of the components of the (N - 1)th order or less are used and the measuring device 100 ｉ The coefficients of the high-order components of the Nth order or more of the above model formula obtained. In addition, in the above-described embodiment, the measuring device 100 ｉ (i = 1 to 3) also obtains the coefficients a of the high-order components of the second order or more of the model formula (1) that represents the relationship between the designed position coordinates X, Y of each irradiation area in the wafer coordinate system (coinciding with the reference coordinate system) and the correction amounts (alignment correction components) dx, dy of the position coordinates of the irradiation area 3 , a 4 , a 5 … and b 3 , b 4 , b 5 …, and the coefficients a of the low-order components of the first order or less 0 , a 1 , a 2 , b 0 , b 1 , b 2 , but since the coefficients of the lower-order components are obtained by the exposure apparatus 200, the measurement apparatus 100 ｉ does not necessarily have to obtain the coefficients of the lower-order components either. In addition, in the substrate processing system 1000 of the present embodiment, in the case where the measurement unit 40 of the measurement apparatus 100 ｉ is provided with the aforementioned multi-point focus position detection system, wafer alignment measurement and flatness measurement (also referred to as focus mapping) of the wafer W can also be performed by the measurement apparatus 100 ｉ . In this case, by using the result of the flatness measurement, focus leveling control of the wafer W at the time of exposure can be performed without performing flatness measurement by the exposure apparatus 200. In addition, in the above-described embodiment, it has been described that the measurement apparatuses 100 1 of the measurement system 500 1 、100 2 、and 100 3 have the same configuration and function, for example, 25 wafers included in the same lot are divided into, for example, three groups, and the wafers in each group are used as the wafers to be measured by the measurement apparatuses 100 1 、100 2 、and 100 3 respectively, and alignment measurement processing of the same content is performed in parallel. However, the measurement apparatuses 100 1 、100 2 、and 100 3 can also perform alignment measurement processing of the same content on wafers of different lots in parallel with each other. For example, it is also possible to use the measurement apparatus 100 1The wafers of the batch to be measured are then handed over to the measuring device 100 for the batch exposed by the same exposure device (e.g., exposure device 200). 2 Measure, using the measuring device 100 2 The next batch of wafers to be measured and then exposed by the same exposure device (e.g., exposure device 200) are handed over to the measuring device 100 3 Measure. In addition, although in the above-described embodiments, from the viewpoint of productivity priority, for 25 wafers of the same batch, by the measurement system 500 1 Three measuring devices 100 1 、100 2 、and 100 3 Share the measurement process and perform parallel processing. However, in the case where measurement accuracy is prioritized over productivity, it is preferably to use the same measuring device 100 ｉ (any one of i = 1 to 3) to perform the above measurement process on 25 wafers of the same batch. The reason is that even if the measuring devices 100 1 、100 2 、and 100 3 Have wafer holders for the same product, there will still be subtle differences in the adsorption state due to the individual differences between the wafer holders, which may cause the measuring devices 100 1 、100 2 、and 100 3 To generate measurement errors. Considering this point, when sharing the measurement of 25 wafers of the same batch by three or two measuring devices 100 1 Of the measurement system 500, for example, the flatness of the wafer holder can be measured using the same ultra-flat wafer, etc., so as to pre-determine the measurement error caused by the individual differences of the wafer holders. In addition, when not sharing the measurement of multiple wafers included in the same batch by three or two measuring devices 100 ｉ Of the measurement system 500 1 Three or two measuring devices 100 ｉ Similarly, in the case of apportionment, a super-flat wafer can also be used in advance to obtain the measurement error caused by the individual differences of the wafer holders. Also, regardless of whether a plurality of wafers of the same batch are measured by the three or two measurement devices 100 of the measurement system 500 2 of the measurement system 500 ｉ In the case of apportioned measurement, a super-flat wafer can also be used to obtain in advance the measurement error caused by the individual differences of the wafer holders of the measurement devices 100 ｉ (i = 4 to 6). Also, for the three measurement devices 100 of the measurement system 500 2 of the measurement system 500 4 to 100 6 , when, for example, one wafer within one batch is measured by the three measurement devices 100 of the measurement system 500 4 to 100 6 under the same conditions respectively, it is also possible to adjust, for example, the reference wafer in such a way that substantially the same measurement results can be obtained. Also, it is preferably designed in advance so that the user of the measurement system 500 1 can select to prioritize the above-mentioned production capacity or measurement accuracy. Also, when actually operating the measurement system 500 1 , it is necessary to consider the operation efficiency of each measurement device 100 ｉ of the measurement system 500 1 、100 2 and 100 3 are not all idle (in a non-operating state) at all times. Therefore, it is also possible to divide the wafers of the same batch into the two or more measurement devices 100 ｉ only when two or more of the measurement devices 100 ｉ are idle at the same time. Also, for example, it is also possible to use the measurement devices 100 of the measurement system 500 1 of the measurement system 500 1 、100 2, and 100 3 At least one of them is used as a measurement device with a different function from other measurement devices. For example, a measurement device can also be set as a measurement device of a multi-point focus position detection system for measuring the unevenness (flatness) of the wafer surface, or can also be set as a wafer shape measurement device. Also, the measurement system 500 1 , 500 2 At least one of them can also be equipped with two or more than four measurement devices. Also, in the above-described embodiment, wafers within the same batch are used as the measurement device 100 1 of the measurement system 500 1 and also as the measurement object of the measurement device 100 2 However, it is not limited to this. Wafers of a certain batch (for example, the batch sent to the exposure device 200) can also be used as the measurement object of the measurement device 100 1 and wafers of another batch (for example, the batch sent to an exposure device other than the exposure device 200) can be used as the measurement object of the measurement device 100 2 In this case, the measurement device 100 1 measures the mark of the measurement object after setting the measurement conditions (the first predetermined conditions) for the mark on the wafer of the batch suitable for measuring the measurement object, and the measurement device 100 2 measures the mark of the measurement object after setting the measurement conditions (the second predetermined conditions) for the mark on the wafer of the batch suitable for measuring the measurement object. Also, in the above-described embodiment, when measuring the overlay error, wafers within the same batch are used as the measurement device 100 2 of the measurement system 500 4 and also as the measurement object of the measurement device 100 5 However, it is not limited to this. Wafers of a certain batch can also be used as the measurement object of the measurement device 100 4 and wafers of another batch can be used as the measurement object of the measurement device 100 5 In this case, the measurement device 100 4 , after setting measurement conditions (first predetermined conditions) for marks on a wafer of a lot suitable for measuring the measurement object, the measurement of the marks of the measurement object is performed, and the measuring device 100 5 , then after setting measurement conditions (second predetermined conditions) for marks on a wafer of a lot suitable for measuring the measurement object, the measurement of the marks of the measurement object is performed. In addition, in the measurement system 500 2 of the measuring device 500 6 , having a configuration and function that are the same as at least one of the measuring devices 500 4 and 500 5 , in a case where the configuration and function are the same, it is possible to replace one or both of the measuring devices 500 4 and the measuring device 500 5 and instead use the measuring device 500 6 . In addition, in the above-described embodiment, in order to maximize the overall productivity of the substrate processing system 1000, it has been described that the substrate processing system 1000 includes: a measurement system 500 including a plurality of, for example, three measuring devices 100 1 ~100 3 ; a measurement system 500 including a plurality of, for example, three measuring devices 100 1 ~100 4 ~100 6 ; a measurement system 500 including a plurality of, for example, three measuring devices 100 2 . However, since the measurement system 500 1 has the same configuration as the measurement system 500 2 , in the above-described embodiment, the role played by the measurement system 500 1 can also be replaced by the measurement system 500 2 , and the role played by the measurement system 500 2 can also be replaced by the measurement system 500 1Instead, in a case where a slight reduction in the overall productivity of the substrate processing system 1000 is acceptable, the substrate processing system 1000 may only include the measurement system 500 1 and 500 2 either one, for example, the measurement system 500 1 . In this case, when the measurement system 500 1 is equipped with four or more measurement devices 100, two of them can also function as the measurement devices 100 1 , 100 2 in the foregoing embodiment, and the remaining two can function as the measurement devices 100 4 , 100 5 . In addition, in the foregoing embodiment, although the case of using the measurement system 500 2 to measure the overlay error is illustrated, it is not limited thereto. The measurement system 500 2 , in addition to measuring the overlay error, can also simply obtain the alignment information (absolute position information, grating information, etc.) of the wafer after exposure and development. Also, in the measurement system 500 2 , the wafers of the same batch can also be divided into a plurality of measurement devices 100 1 in the same manner as when performing the measurement system 500 ｉ (at least two of i = 4, 5, 6). Furthermore, in the substrate processing system 1000 of the foregoing embodiment, the measurement systems 500 1 , 500 2 are both connected on-line to either the exposure device 200 or the C / D 300. The measurement system 500 1 , 500 2 either one, for example, the measurement system 500 2, can also be connected online to one or both of the exposure device 200 and the C / D 300. For example, with the C / D 300 arranged between the exposure device 200 and the measurement system 500 2 in such a way, connect the C / D 300 and the measurement system 500 2 online. Or, with the measurement system 500 arranged between the exposure device 200 and the C / D 300 2 , connect online to both the exposure device 200 and the C / D 300. In this case, the measurement system 500 2 may not have the carrier system 510. Also, in the above-described embodiment, the measurement system 500 1 , 500 2 may not have a plurality of measurement devices 100 ｉ . For example, the measurement system 500 1 may have a plurality of measurement devices 100 ｉ , and the measurement system 500 2 only has one measurement device. In this case, the measurement process (at least one of the measurement process of the wafer grating and the overlay deviation measurement process, etc.) of the wafers in the same batch by a plurality of measurement devices described so far, as long as the measurement system 500 1 is used. Also, in this case, instead of the measurement system 500 2 , a general overlay measurer can be used instead. Also, although in the above-described embodiment, it is described that the data on the deformation components of the wafer grating and the alignment history data file of each wafer obtained by the measurement device 100 1 of the measurement system 500 ｉ (i = 1 to 3) are effectively utilized by the exposure device 200 as pre-measurement data. However, it is not limited to this, and the data on the deformation components of the wafer grating and the alignment history data file of each wafer obtained by the measurement device 100 ｉ can also be used by the measurement system control device 530 1(or the analysis device 3000) obtains the program control data and feedbacks this program control data to the host computer 2000. As the data obtained from the measurement device 100 ｉ The program control data obtained from the data acquired can typically include control data for film forming devices 2300 such as CVD devices or CMP devices 2200. In addition, in the above embodiment, the measurement device 100 ｉ The signal processing device 49 of the processing mark detection system MDS (where i = any one of 1 to 3) only selects and sends the data of the measurement results of the wafer marks with good waveforms of the detection signals obtained as the detection results of the mark detection system MDS to the control device 60 ｉ . In other words, the signal processing device 49 also obtains the measurement results of wafer marks with non-good waveforms of the detection signals. Therefore, the measurement system control device 530 1 (or the analysis device 3000) can also obtain the data of the measurement results of all wafer marks, including the measurement results of wafer marks with non-good waveforms of the detection signals, from the signal processing device 49, and calculate the program control data based on this data. Or, the signal processing device 49 can also send the data of the measurement results of all wafer marks to the control device 60 ｉ , and the control device 60 ｉ makes a judgment on whether the detection signal obtained as the detection result of the mark detection system MDS is good. In this case, the control device 60 ｉ can also send the data of the measurement results of all wafer marks, including the measurement results of wafer marks not used for EGA operations, to the measurement system control device 530 (or the analysis device 3000), and the measurement system control device 530 1 (or the analysis device 3000) calculates the program control data based on the data sent. In addition, in the above embodiment, although the object is a 300-mm wafer, it is not limited thereto. It can also be a 450-mm wafer with a diameter of 450 mm or a 200-mm wafer with a diameter of 200 mm. Since the wafer alignment can be performed independently of the exposure device 200 with the measurement device 100 ｉ without reducing the exposure processing throughput, operations such as full-point EGA measurement can be carried out. In addition, it is also possible to perform in the measurement system 500 1 and the measurement system 500 2 at least one of them measures wafers with different diameters in one measurement device and other measurement devices. For example, the measurement system 500 1 the measurement device 100 of 1 is used for 300-mm wafers, and the measurement device 100 2 is used for 450-mm wafers. In addition, although the measurement device 100 of the above-described embodiment ｉ is described such that each of the gratings RG1, RG2a, and RG2b has the X-axis direction and the Y-axis direction as the periodic directions, this is not limiting. As long as the grating portions (two-dimensional gratings) provided in each of the first position measurement system 30 and the second position measurement system 50 have two directions intersecting each other in the XY plane as the periodic directions. Furthermore, the configuration of the measurement device 100 described in the above-described embodiment ｉ is merely an example. For example, a measurement device only needs to have a stage (slider 10) that can move relative to a base member (surface plate 12) and can measure the position information of a plurality of marks on a substrate (wafer) held by the stage. Therefore, a measurement device does not necessarily need to include, for example, the first position measurement system 30 and the second position measurement system 50. Furthermore, the configuration of the head 32 of the first position measurement system 30 and the arrangement of the detection points described in the above embodiments are of course only examples. For example, the positions of the detection points of the marker detection system MDS and the detection center of the head 32 may not coincide in at least one of the X-axis direction and the Y-axis direction. Also, the arrangement of the head of the first position measurement system 30 and the grating RG1 (grating portion) may be reversed. That is, a head may be provided on the slider 10, and a grating portion may be provided on the surface plate 12. Also, the first position measurement system 3 does not necessarily have to include the encoder system 33 and the laser interferometer system 35, and the first position measurement system 30 may be composed only of the encoder system. The first position measurement system may also be configured by an encoder system that measures the position information of the slider 10 relative to the surface plate 12 in the six-degree-of-freedom direction by irradiating a beam from the head to the grating RG1 of the slider 10 and receiving the return beam (diffraction beam) from the grating. In this case, the configuration of the head of the head may be any. The first position measurement system 30 does not necessarily have to be able to measure the position information of the slider 10 relative to the surface plate 12 in the six-degree-of-freedom direction, and may only be able to measure the position information in, for example, the X, Y, and θz directions. Also, the first position measurement system that measures the position information of the slider 10 relative to the surface plate 12 may be arranged between the surface plate 12 and the slider 10. Also, the first measurement system may be composed of other measurement devices such as an interferometer system for measuring the position information of the slider 10 relative to the surface plate 12 in the six-degree-of-freedom direction or in the three-degree-of-freedom direction in the horizontal plane. Similarly, the configuration of the second position measurement system 50 described in the above embodiments is only an example. For example, the heads 52A and 52B may be fixed to the surface plate 12 side, and the scales 54A and 54B and the marker detection system MDS may be integrated. Also, the second position measurement system 50 may have only one head, or may have three or more heads. In any case, it is preferable that the second position measurement system 50 can measure the positional relationship between the surface plate 12 and the marker detection system MDS in the six-degree-of-freedom direction. However, the second position measurement system 50 does not necessarily have to be able to measure all the positional relationships in the six-degree-of-freedom direction. In addition, in the above embodiments, it was described that the slider 10 is suspended and supported on the surface plate 12 by a plurality of air bearings 18, and a drive system 20 that drives the slider 10 in a non-contact state relative to the surface plate 12 is configured, including a first drive device 20A that drives the slider 10 in the X-axis direction and a second drive device 20B that drives the slider 10 and the first drive device 20A integrally in the Y-axis direction. However, this is not limited thereto, and as the drive system 20, a drive system configured to drive the slider 10 in the six-degree-of-freedom direction on the surface plate 12 may be adopted. Such a drive system may be configured by, for example, a magnetic levitation type planar motor. In this case, the air bearings 18 are not required. In addition, the measuring device 100 ｉIt is also possible to provide a drive system for the drive platen 12 independently of the vibration isolation device 14. Also, in the above-described embodiment, although the measurement system 500 includes an EFEM system as the carrier system 510, it is also possible to replace the EFEM system with a carrier storage device that can store a plurality (for example, three) of carriers (FOUPs, etc.) along the Y-axis direction. In this case, the measurement system 500 may also include a plurality of loading ports adjacent to each of the plurality of measurement devices 100 ｉ and a carrier transfer device that transfers a carrier (FOUP, etc.) between the carrier storage device and the placement unit of the plurality of loading ports. In addition, in the above-described embodiment, although the case where the C / D 300 is connected online to the exposure device 200 has been described, it is also possible to replace the C / D 300 with a coater that coats a sensitizer (resist) on a substrate (wafer) and connect it online to the exposure device 200. In this case, the wafer after exposure is transferred into a developing device (developer) that is not connected online to the exposure device. Alternatively, it is also possible to replace the C / D 300 with a developing device (developer) that develops the substrate (wafer) after exposure and connect it online to the exposure device 200. In this case, a wafer pre-coated with a resist at another location is transferred into the exposure device. In the above-described embodiment, although the case where the exposure device is a scanning stepper has been described, it is not limited thereto. The exposure device may also be a stationary type exposure device such as a stepper, or a reduction projection exposure device of a step-and-repeat type that combines irradiation areas. Furthermore, the above-described embodiment can also be applied to a multi-stage exposure device having a plurality of wafer stages as disclosed in, for example, the specifications of U.S. Patent No. 6,590,634, U.S. Patent No. 5,969,441, and U.S. Patent No. 6,208,407. Also, the exposure device is not limited to the dry exposure device that exposes the wafer W without passing through a liquid (water). It may also be an immersion type exposure device that exposes the substrate through a liquid as described in, for example, the specifications of European Patent Application Publication No. 1420298, International Publication No. 2004 / 055803, International Publication No. 2004 / 057590, U.S. Patent Application Publication No. 2006 / 0231206, U.S. Patent Application Publication No. 2005 / 0280791, and U.S. Patent No. 6,952,253. Also, the exposure device is not limited to an exposure device for semiconductor manufacturing. For example, it may also be an exposure device for liquid crystals that transfers a liquid crystal display element pattern onto a rectangular glass plate. A semiconductor device is manufactured by a lithography process in which an exposure apparatus, which is part of the substrate processing system constituting each of the above-described embodiments, exposes a photosensitive object through the use of a reticle (mask) having a pattern formed thereon and develops the photosensitive object after exposure. At this time, high-integration devices can be manufactured with a good yield. In addition, as shown in FIG. 14, the manufacturing process of the semiconductor device may include, in addition to the lithography process, a step of designing the functions / performance of the device, a step of fabricating a reticle (mask) based on this design step, a device assembly step (including a dicing step, a bonding step, and a packaging step), an inspection step, and the like. In addition, all gazettes, international publications, U.S. Patent Application Publication Specifications, and U.S. Patent Specifications related to the exposure apparatus and the like cited in the above-described embodiments are incorporated herein by reference and made a part of the description of this specification. 10: Slide 12: Surface plate 14: Vibration isolation device 16: Base frame 18: Air bearing 20: Drive system 20A: First drive device 20B: Second drive device 22a, 22b: Movable members 23a, 23b: Movable members 24: Movable stage 25a, 25b: Fixed members 26a, 26b: Fixed members 28A, 28B: X-axis linear motors 29A, 29B: Y-axis linear motors 30: First position measurement system 32: Read head 33: Encoder system 40: Measurement unit 48: Vibration isolation device 50: Second position measurement system 52A, 52B: Read heads 60 ｉ : Control device 70 ｉ : Wafer transfer system 100 ｉ : Measuring device 200: Exposure apparatus 300: C / D 500 1 , 500 2 : Measurement system 510: EFEM system 512: EFEM body 514: Load port 516: Robot 521: Transfer system 524: Loading transfer member 526: Unloading transfer member 530 1 , 530 2 : Measurement system control device 1000: Substrate processing system MDS: Mark detection system RG1: Grating RG2a, RG2b: Gratings W: Wafer WST: Wafer stage [FIG. 1] is a block diagram showing a substrate processing system of an embodiment together with other devices used in a manufacturing line of micro components. [FIG. 2] is a perspective external view showing the measurement system included in the substrate processing system of FIG. 1. [FIG. 3] is a top view showing the measurement system of FIG. 1 with the ceiling part of the chamber removed. [FIG. 4] is a perspective view schematically showing the configuration of a measurement device that is part of the measurement system. [FIG. 5(A)] is a front view (viewed from the -Y direction) omitting a part of the measurement device of FIG. 4, and [FIG. 5(B)] is a partial cross-sectional view omitting a part of the measurement device taken along the XZ plane passing through the optical axis AX1 of the mark detection system. [FIG. 6] is a partial cross-sectional view omitting a part of the measurement device taken along the YZ plane passing through the optical axis AX1 of the mark detection system. [FIG. 7] is a diagram for explaining the configuration of the second position measurement system. [FIG. 8] is a block diagram showing the input / output relationship of a control device configured centering on the control system of the measurement device. [FIG. 9] is a diagram schematically showing the configuration of the exposure device shown in FIG. 1. [FIG. 10] is a block diagram showing the input / output relationship of the exposure control device included in the exposure device. [FIG. 11] is a flowchart corresponding to the processing algorithm of the control device 60 ｉ when processing one batch of wafers. [FIG. 12] is a diagram schematically showing the processing flow of a method for measuring the position information (coordinate position information) of X marks and Y marks performed by the substrate processing system of FIG. 1. [FIG. 13] is a diagram schematically showing the processing flow of a method for measuring overlay deviation performed by the substrate processing system of FIG. 1 (Part 1). [FIG. 14] is a diagram schematically showing the processing flow of a method for measuring overlay deviation performed by the substrate processing system of FIG. 1 (Part 2). [FIG. 15] is a diagram showing an example of a manufacturing process of semiconductor components. 60 1 ~60 6 : Control device 100 1 ~100 6 : Measurement device 200: Exposure device 220: Exposure control device 300: C / D 320: Coating / development control device 330: Temperature control unit 500 1 : Measurement system 530 1 、530 2 : Measuring system control device 1000: Substrate processing system 1500: Local Area Network (LAN) 2000: Host computer 2100: Etching device 2200: CMP device 2300: Film forming device 3000: Analysis device

Claims

1. A measurement system for use in a micro-component manufacturing line, comprising: a measuring device that performs measurement processing to acquire position information of a plurality of marks formed on a substrate; and a control device connected to and communicating with the measuring device; the control device inputting data acquired by the measuring device during the measurement processing, and acquiring program control data used in a program processing device for performing program processing based on the data, the program processing being performed prior to the measurement processing.

2. The measurement system as described in claim 1, wherein, The aforementioned data includes a modified component representing the arrangement of a plurality of regions formed on the substrate corresponding to the aforementioned plurality of marks.

3. The measurement system as described in claim 1, wherein, The aforementioned data includes historical data on the aforementioned measurement processes performed by the aforementioned measuring device.

4. The measurement system as described in claim 1, wherein, The aforementioned measuring device acquires detection signals of the aforementioned plurality of marks in order to obtain position information of the aforementioned plurality of marks formed on the substrate; the aforementioned data includes the aforementioned detection signals corresponding to the aforementioned plurality of marks respectively.

5. The measurement system as described in claim 1, wherein, The aforementioned measuring device acquires detection signals of the aforementioned plurality of marks in order to obtain position information of the aforementioned plurality of marks formed on the substrate; the aforementioned data includes: deformation components of the arrangement of the plurality of regions formed on the substrate corresponding to the aforementioned plurality of marks, history data of the aforementioned measurement process performed by the aforementioned measuring device, and at least one of the aforementioned detection signals corresponding to the aforementioned plurality of marks respectively.

6. The measurement system as described in claim 1, wherein, The aforementioned control device is connected to a host computer that is connected to the aforementioned program processing device, and outputs the aforementioned program control data to the aforementioned program processing device that executes the aforementioned program processing via the aforementioned host computer.

7. The measurement system as described in claim 6, wherein, The aforementioned processing apparatus includes at least one of a film-forming apparatus containing a CVD apparatus, a CMP apparatus, and an etching apparatus.

8. The measurement system as described in claim 6, wherein, The aforementioned control device outputs the position information of the aforementioned plurality of marks acquired by the aforementioned measuring device to the exposure device that forms the aforementioned plurality of marks in a feedback manner.

9. The measurement system as described in claim 8, wherein, The aforementioned exposure apparatus is connected to the aforementioned main computer; the aforementioned control device outputs the position information of the aforementioned plurality of marks to the aforementioned substrate via the aforementioned main computer and forms the aforementioned plurality of marks on the aforementioned exposure apparatus.

10. A substrate processing system comprising: the measurement system as described in claim 1; and an exposure apparatus having a substrate stage on which a substrate having undergone measurement processing of position information of the plurality of marks by the measurement apparatus included in the measurement system has been completed; the exposure apparatus performing wafer alignment on the substrate placed on the substrate stage to obtain position information of a portion of the marks selected from the plurality of marks, and performing exposure processing on the substrate by exposing it with an energy beam based on the position information of the plurality of marks obtained by the measurement apparatus and the position information of the portion of the marks obtained by the exposure apparatus.

11. A substrate processing system comprising: the measurement system described in claim 1; and an exposure apparatus having a substrate stage on which a substrate having undergone measurement processing of position information of the plurality of marks performed by the measurement apparatus included in the measurement system; the exposure apparatus performing wafer alignment on the substrate placed on the substrate stage to obtain position information of a portion of the plurality of marks selected from the plurality of marks, and performing an exposure process of exposing the substrate to an energy beam based on the position information of the plurality of marks obtained by the measurement apparatus and the position information of the portion of the marks obtained by the exposure apparatus; the measurement processing of the plurality of marks performed by the measurement apparatus is performed after at least one of the aforementioned procedures of cleaning, oxidation / diffusion, film deposition, etching, ion implantation, and CMP, and before the coating of a photosensitive agent for subsequent exposure processing; the aforementioned procedure control data is output from the control apparatus included in the measurement system to at least one of the processing apparatuses performing film deposition, CMP, and exposure processing respectively.

12. A substrate processing system comprising: a process processing apparatus including at least one of an etching apparatus, a CMP apparatus, and a film deposition apparatus for processing a substrate; a measurement system as described in claim 1 for performing the aforementioned measurement processing on the substrate; an exposure apparatus for performing exposure processing on the substrate placed on a substrate stage; and a main computer connected to the aforementioned measurement system, the aforementioned exposure apparatus, and the aforementioned process processing apparatus; and program control data obtained based on the aforementioned data obtained by the aforementioned measurement apparatus included in the aforementioned measurement system during the aforementioned measurement processing of the substrate, outputting the aforementioned program control data to the aforementioned process processing apparatus via the main computer.

13. The substrate processing system as described in claim 12, wherein, The aforementioned data includes: deformation components of the arrangement of a plurality of regions formed on the substrate corresponding to the aforementioned plurality of marks, history data of the aforementioned measurement processing performed by the aforementioned measuring device, and at least one of the detection signals corresponding to the aforementioned plurality of marks.

14. The substrate processing system as described in claim 13, further comprising a parsing device connected to the aforementioned measurement system; replacing the aforementioned control device of the aforementioned measurement system, wherein the aforementioned program control data is obtained by the aforementioned parsing device.

15. A method of manufacturing an element, comprising: exposing a substrate using the exposure apparatus included in the substrate processing system as described in any one of claims 10 to 14; and developing the exposed substrate.

16. A measurement system for a micro-component manufacturing line, comprising: a plurality of measuring devices that perform measurement processing to acquire position information of a plurality of marks formed on a substrate; and a control device connected to and communicating with the plurality of the measuring devices; the plurality of the measuring devices including a first measuring device and a second measuring device, wherein the first measuring device acquires position information of a first plurality of marks, i.e., first position information, and the second measuring device acquires position information of a second plurality of marks different from the first plurality of marks, i.e., second position information, wherein the first position information is acquired under a first predetermined condition set on the first measuring device, and the second position information is acquired under a second predetermined condition set on the second measuring device, which is different from the first predetermined condition; the control device inputs data acquired by each of the measuring devices through the measurement processing, and acquires program control data used in program processing performed prior to each of the measurement processing based on the data.

17. The measurement system as described in claim 16, wherein, The first measuring device acquires the first position information of a plurality of the aforementioned marks formed on the m-th layer (m is an integer greater than or equal to 1) of the aforementioned substrate, and the second measuring device acquires the second position information of a plurality of the aforementioned marks formed on the n-th layer (n is an integer greater than or equal to 1 and different from m) of the aforementioned substrate; the control device acquires the first program control data used in the first program processing device for performing program processing based on the first position information acquired by the first measuring device, and acquires the second program control data used in the second program processing device for performing program processing based on the second position information acquired by the second measuring device, the first program processing device performing the aforementioned program processing is performed before the aforementioned measurement processing of the first measuring device, and the second program processing device performing the aforementioned program processing is performed before the aforementioned measurement processing of the second measuring device.

18. The measurement system as described in claim 17, wherein, The aforementioned control device outputs the aforementioned first position information in a feedback manner to the exposure device used for the exposure processing of the plurality of aforementioned marks formed on the aforementioned m-th layer, and outputs the aforementioned second position information in a feedback manner to the exposure device used for the exposure processing of the plurality of aforementioned marks formed on the aforementioned n-th layer.

19. The measurement system as described in claim 17, wherein, The aforementioned control device is connected to a host computer connected to the aforementioned program processing device, and outputs the aforementioned first program control data via the aforementioned host computer to the aforementioned first program processing device used in the aforementioned m-th layer of processing, and outputs the aforementioned second program control data via the aforementioned host computer to the aforementioned second program processing device used in the aforementioned n-th layer of processing.

20. The measurement system as described in claim 19, wherein, The aforementioned processing apparatus includes at least one of a film-forming apparatus containing a CVD apparatus, a CMP apparatus, and an etching apparatus.

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