Device for vapor deposition processes and method for forming a film

Abstract

This invention provides an apparatus. The apparatus includes a substrate having at least one structure with an aspect ratio of at least 10:1. The apparatus includes a film positioned on the at least one structure with a layer coverage of at least 90%. The film includes: a metal oxide or metal-like oxide; and a concentration of less than 1 × 10²⁰ hydrogen atoms / cm³ as measured by SIMS. Methods and related systems and methods for forming the film on the substrate are also provided herein.

Description

Forming a film with improved step coverage The present invention relates to forming a film with improved step coverage, related apparatuses, related systems, and related methods. Films deposited via a vapor deposition process can result in non-uniform films. Problems associated with the self-decomposition and insufficient diffusion of metal precursor sources or the dosage of metal precursor sources can lead to non-uniform film deposition. In a similar manner, co-reactants can have problems associated with decomposition, insufficient diffusion, insufficient dosage, or any combination thereof on the film surface. Some embodiments of the present invention relate to a method. In some embodiments, the method is a method for forming a film. In some embodiments, the method includes exposing a substrate having at least one structure with an aspect ratio of at least 10:1 to a first precursor gas. In some embodiments, the method includes flowing a feed gas to an ozone generator to generate a second precursor gas, the feed gas including at least 1 volume% of N based on the total volume of the feed gas 2 .. In some embodiments, the method includes exposing the substrate to the second precursor gas to form a film with at least 90% step coverage on the at least one structure of the substrate. Some embodiments of the present invention relate to an apparatus. In some embodiments, the apparatus includes a substrate. In some embodiments, the substrate has at least one structure with an aspect ratio of at least 10:1. In some embodiments, the apparatus includes a film. In some embodiments, the film is positioned on the at least one structure with at least 90% step coverage. In some embodiments, the film includes a metal oxide. In some embodiments, the film includes a concentration of less than 1×10 20 hydrogen atoms per cubic centimeter as measured by SIMS. Among the benefits and improvements already disclosed, other objects and advantages of the present invention will become apparent from the following description in conjunction with the accompanying drawings. Specific embodiments of the present invention are disclosed herein; however, it should be understood that the disclosed embodiments merely illustrate the invention that can be embodied in various forms. Additionally, each example given with respect to various embodiments of the present invention is intended to be illustrative and not limiting. The entire text of any prior patents and publications referenced herein is incorporated by reference. This application claims the benefit of U.S. Provisional Patent Application No. 63 / 535,287, filed on August 29, 2023, and U.S. Provisional Patent Application No. 63 / 656,991, filed on June 6, 2024, under 35 USC 119, and the entire disclosure of each case is hereby incorporated by reference into this application. Throughout the specification and the claims, unless the context clearly dictates otherwise, the following terms have the meanings explicitly associated herein. The phrases "in one embodiment," "in an embodiment," and "in some embodiments" as used herein do not necessarily refer to the same embodiment(s), but may refer to the same embodiment(s). Additionally, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to a different embodiment, but may refer to a different embodiment. All embodiments of the present invention are intended to be combinable without departing from the scope or spirit of the present invention. As used herein, unless the context clearly dictates otherwise, the term "based on" is not exclusive and allows for additional factors not described. Additionally, throughout the specification, the meanings of "a" and "the" include plural referents. The meaning of "in" includes "in" and "on". Some embodiments relate to methods for forming films with improved step coverage on a substrate, and related systems, devices, and the like. Some film deposition processes have unpredictable poor step coverage. As disclosed herein, it has been found that when including N 2 a precursor gas is supplied to a feed gas of an ozone generator and the resulting gas (e.g., corona plasma) from the ozone generator is used in a vapor deposition process, increasing the concentration of nitrogen (N 2 ) in the precursor gas above the conventional content of 10 ppm to 15 ppm suddenly results in an improvement in step coverage. Accordingly, in some embodiments, there are provided methods for forming a film (e.g., a metal oxide film) having a step coverage of at least 90% on at least one high aspect ratio structure of a substrate, and related systems, devices, and methods. Examples of vapor deposition processes include, but are not limited to, at least one of the following: a chemical vapor deposition (CVD) process, a digital or pulsed chemical vapor deposition process, a plasma enhanced cyclic chemical vapor deposition (PECCVD) process, a flowable chemical vapor deposition (FCVD) process, an atomic layer deposition (ALD) process, a thermal atomic layer deposition, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, or any combination thereof. As used herein, the term "aspect ratio coverage" refers to the ratio of the thickness of a film on a first surface of a substrate to the thickness of a film on a second surface of the substrate. In some embodiments, the first surface of the substrate and the second surface of the substrate are different. For example, in some embodiments, the first surface of the substrate is a surface at the bottom of a high aspect ratio structure (such as a trench) and the second surface of the substrate is a surface at the top of a high aspect ratio structure (such as a trench). As disclosed herein, non-limiting examples of high aspect ratio structures include (e.g., but not limited to) at least one of a trench, an air chamber, a cavity, a hole, a channel, or any combination thereof. It should be understood that other structures will have a high aspect ratio and thus these should not be limiting. FIG. 1 is a flowchart of a method 100 for forming a film according to some embodiments. As shown in FIG. 1, the method 100 for forming a film may include one or more of the following steps: exposing 102 a substrate to a first precursor gas; flowing 104 a feed gas to an ozone generator to generate a second precursor gas; and exposing 106 the substrate to the second precursor gas to form a film on the substrate. In some embodiments, performing one or more of steps 102, 104, and 106 includes a deposition cycle. In some embodiments, the method 100 for forming a film includes from 1 deposition cycle to 100,000 deposition cycles or any range or sub-range between 1 deposition cycle and 100,000 deposition cycles. In some embodiments, the method 100 for forming a film includes exposing 102 a substrate to a first precursor gas. In some embodiments, exposing 102 includes introducing the first precursor gas into a chamber containing the substrate. In some embodiments, exposing 102 includes flowing the first precursor gas into a chamber containing the substrate. In some embodiments, exposing 102 includes supplying the first precursor gas to a chamber containing the substrate. In some embodiments, exposing 102 includes pumping the first precursor gas into a chamber containing the substrate. In some embodiments, exposing 102 includes pulsing the first precursor gas into a chamber containing the substrate. In some embodiments, exposing 102 includes pulsing the first precursor gas into a chamber containing the substrate for a duration. In some embodiments, exposing 102 is sufficient to bring the first precursor gas and the substrate into direct or close proximity or direct physical contact. In some embodiments, exposure 102 includes pulsing a first precursor gas into a chamber containing a substrate for a duration. In some embodiments, the duration is a duration of any range or sub-range between 0.01 seconds and 60 minutes or longer or between 0.01 seconds and 60 minutes. For example, in some embodiments, the duration is a duration of any one of 0.01 seconds to 50 minutes, 0.01 seconds to 40 minutes, 0.01 seconds to 30 minutes, 0.01 seconds to 20 minutes, 0.01 seconds to 10 minutes, 0.01 seconds to 1 minute, 0.01 seconds to 45 seconds, 0.01 seconds to 30 seconds, 0.01 seconds to 15 seconds, 0.01 seconds to 10 seconds, 0.01 seconds to 5 seconds, 0.01 seconds to 3 seconds, 0.01 seconds to 1 second, 0.01 seconds to 0.5 seconds, 0.01 seconds to 0.1 seconds, or 0.01 seconds to 0.05 seconds. In some embodiments, the duration is a duration of any one of 0.05 seconds to 60 minutes, 0.10 seconds to 60 minutes, 0.2 seconds to 60 minutes, 0.3 seconds to 60 minutes, 0.4 seconds to 60 minutes, 0.5 seconds to 60 minutes, 0.6 seconds to 60 minutes, 0.7 seconds to 60 minutes, 0.8 seconds to 60 minutes, 0.9 seconds to 60 minutes, 1 second to 60 minutes, 3 seconds to 60 minutes, 5 seconds to 60 minutes, 15 seconds to 60 minutes, 30 seconds to 60 minutes, 1 minute to 60 minutes, 10 minutes to 60 minutes, 20 minutes to 60 minutes, 30 minutes to 60 minutes, 40 minutes to 60 minutes, or 50 minutes to 60 minutes. In some embodiments, the duration is a duration of any range or sub-range between 0.01 seconds and 5 minutes or longer or between 0.01 seconds and 5 minutes. For example, in some embodiments, the duration is a duration of any one of 0.01 seconds to 4 minutes, 0.01 seconds to 3 minutes, 0.01 seconds to 2 minutes, 0.01 seconds to 1 minute, 0.01 seconds to 50 seconds, 0.01 seconds to 40 seconds, 0.01 seconds to 30 seconds, 0.01 seconds to 20 seconds, 0.01 seconds to 10 seconds, 0.01 seconds to 5 seconds, 0.01 seconds to 3 seconds, 0.01 seconds to 1 second, 0.01 seconds to 0.5 seconds, 0.01 seconds to 0.1 seconds, or 0.01 seconds to 0.05 seconds. In some embodiments, the duration is a duration of any one of 0.05 seconds to 5 minutes, 0.10 seconds to 5 minutes, 0.2 seconds to 5 minutes, 0.3 seconds to 5 minutes, 0.4 seconds to 5 minutes, 0.5 seconds to 5 minutes, 0.6 seconds to 5 minutes, 0.7 seconds to 5 minutes, 0.8 seconds to 5 minutes, 0.9 seconds to 5 minutes, 1 second to 5 minutes, 3 seconds to 5 minutes, 5 seconds to 5 minutes, 15 seconds to 5 minutes, 30 seconds to 5 minutes, 1 minute to 5 minutes, 2 minutes to 5 minutes, 3 minutes to 5 minutes, or 4 minutes to 5 minutes. In some embodiments, exposure 102 is performed at a temperature of 100 °C to 500 °C or any range or sub-range therebetween. For example, in some embodiments, exposure 102 is performed at a temperature of 100 °C to 475 °C, 100 °C to 450 °C, 100 °C to 425 °C, 100 °C to 400 °C, 100 °C to 375 °C, 100 °C to 350 °C, 100 °C to 325 °C, 100 °C to 300 °C, 100 °C to 275 °C, 100 °C to 250 °C, 100 °C to 225 °C, 100 °C to 200 °C, 100 °C to 175 °C, 100 °C to 150 °C, 100 °C to 125 °C, 125 °C to 500 °C, 150 °C to 500 °C, 175 °C to 500 °C, 200 °C to 500 °C, 225 °C to 500 °C, 250 °C to 500 °C, 275 °C to 500 °C, 300 °C to 500 °C, 325 °C to 500 °C, 350 °C to 500 °C, 375 °C to 500 °C, 400 °C to 500 °C, 425 °C to 500 °C, 450 °C to 500 °C, or 475 °C to 500 °C. In some embodiments, the substrate is a high aspect ratio substrate. For example, in some embodiments, a high aspect ratio substrate includes a substrate having at least one structure with a high aspect ratio. In some embodiments, the substrate may have a plurality of structures, where each of the plurality of structures has a high aspect ratio. The number of structures having a high aspect ratio is not particularly limited and may range from one structure to thousands of structures. The at least one structure is not particularly limited and may include any structure having a high aspect ratio disclosed herein. In some embodiments, the at least one structure includes at least one of a trench, an air chamber, a cavity, a hole, a channel, or any combination thereof. Although high aspect ratio structures are disclosed herein, it should be understood that the embodiments disclosed herein also include substrates that do not have high aspect ratio structures. The aspect ratio of a structure may refer to a ratio of two of a width, a depth, a height, a length, or a diameter in any combination. In some embodiments, for example, the aspect ratio refers to a ratio of a depth of a circular hole (such as a micropore, etc.) to a diameter of the circular hole (such as a micropore, etc.). In some embodiments, the aspect ratio refers to a ratio of a depth of a non-circular hole (such as a trench, etc.) to a width of the non-circular hole (such as a trench, etc.). Non-limiting examples of substrates that include high aspect ratio substrates include (but are not limited to) at least one of a diaphragm, a showerhead, a liner, a tube, a gas pipeline, a valve, a syringe, a tray, or any combination thereof. At least one structure on the substrate can be a structure having an aspect ratio of at least 10:1. For example, in some embodiments, the substrate has at least one structure having an aspect ratio of at least 10:1, at least 20:1, at least 30:1, at least 40:1, at least 50:1, at least 60:1, at least 70:1, at least 80:1, or at least 90:1. In some embodiments, the substrate has at least one structure having an aspect ratio of from 10:1 to 100:1, 10:1 to 90:1, 10:1 to 80:1, 10:1 to 70:1, 10:1 to 60:1, 10:1 to 50:1, 10:1 to 40:1, 10:1 to 30:1, 10:1 to 20:1, 20:1 to 100:1, 30:1 to 100:1, 40:1 to 100:1, 50:1 to 100:1, 60:1 to 100:1, 70:1 to 100:1, 80:1 to 100:1, or 90:1 to 100:1. In some embodiments, the at least one structure and the substrate are a single integral piece. In some embodiments, the at least one structure and the substrate are manufactured separately and assembled together. The substrate can include a substrate for microelectronic applications and / or semiconductor applications. In some embodiments, the substrate includes at least one of the following: silicon, silicon oxide, silicon on insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, a glass, a sapphire, a metal, a metal nitride, a metal alloy, or any combination thereof. In some embodiments, the substrate includes a semiconductor. In some embodiments, the substrate includes at least one of titanium, titanium nitride, tungsten, tungsten nitride, tantalum, tantalum nitride, or any combination thereof. The first precursor gas includes at least one of an elemental metal, a metal halide, a metal haloxide, an organometallic compound, an organometallic complex, or any combination thereof. In some embodiments, the first precursor gas includes at least one of the following: HfCl 4 、ZrCl 4 、AlCl 3 、TiCl 4 、TaCl 5 、NbCl 5 、VCl 4 、GaCl 3 、InCl 3or any combination thereof. In some embodiments, the first precursor gas comprises at least one of the following: dimethylhydrazine, trimethylaluminum (TMA), hafnium chloride (HfCl 4 ), zirconium chloride (ZrCl 4 ), indium trichloride, indium monochloride, aluminum trichloride, titanium iodide, tungsten carbonyl, Ba(DPM) 2 , bis(dineopentanoyl methanediyl) strontium (Sr(DPM) 2 ), TiO(DPM) 2 , tetrakis(dineopentanoyl methanediyl) zirconium (Zr(DPM) 4 ), decaborane, octadecaborane, boron, magnesium, gallium, indium, antimony, copper, phosphorus, arsenic, lithium, sodium tetrafluoroborate, a precursor incorporating an alkylamidinato ligand, an organometallic precursor, zirconium tert-butoxide (Zr(t-OBu) 4 ), tetrakis(diethylamino)zirconium (Zr(Net 2 ) 4 ), tetrakis(diethylamino)hafnium (Hf(Net 2 ) 4 ), tetrakis(dimethylamino)titanium (TDMAT), tert-butylamido tris(diethylamido)tantalum (TBTDET), pentakis(dimethylamido)tantalum (PDMAT), pentakis(ethylmethylamido)tantalum (PEMAT), tetrakis(dimethylamino)zirconium (Zr(NMe 2 ) 4 ), hafnium tert-butoxide (Hf(tOBu) 4 ), xenon difluoride (XeF 2 ), xenon tetrafluoride (XeF 4 ), xenon hexafluoride (XeF 6 ) or any combination thereof. In some embodiments, the first precursor gas comprises at least one of the following: rare earth β-diketonate compounds (such as (La(THD) 3 ) and / or (Y(THD) 3 ), rare earth cyclopentadienyl (Cp) compounds (e.g., La(iPrCp) 3 ), rare earth amidinate compounds (e.g., lanthanum tris(amidino) La(FAMD) 3 ), cyclooctadienyl compounds containing a rare earth metal, alkylamido compounds (e.g., hafnium tris(dimethylamido) cyclopentadienyl (Hf(C 5 H 5 )(N(CH 3 )) 2 )) 3 ), zirconium tris(dimethylamido) cyclopentadienyl (Zr(C 5 H 5 )(N(CH 3 )) 2 )) 3 ), hafnium tetra(ethylmethylamino) (TEMAHf), zirconium tetra(ethylmethylamino) (TEMAZr), hafnium tetra(diethylamino) ((Et 2 N) 4 Hf or TDEAH) and / or hafnium tetra(dimethylamino) ((Me 2 N) 4 Hf or TDMAH), alkoxides, halogen compounds of silicon, silicon tetrachloride, Si 2 Cl 6 , silicon tetrafluoride, silicon tetraiodide or any combination thereof. In some embodiments, the first precursor gas comprises at least one of the following: decaborane, hafnium tetrachloride, zirconium tetrachloride, indium trichloride, metal organic β-diketonate complexes, tungsten hexafluoride, cyclopentadienylcycloheptatrienyl-titanium (CpTiCht), aluminum trichloride, titanium iodide, cyclooctatetraenylcyclopentadienyl titanium, dicyclopentadienyl titanium bisazide, trimethyl gallium, trimethyl indium, alkyl aluminums (such as trimethyl aluminum, triethyl aluminum, trimethylamine alane), dimethyl zinc, tetramethyl tin, trimethyl antimony, diethyl cadmium, tungsten carbonyl or any combination thereof. In some embodiments, the first precursor gas comprises at least one of the following: elemental boron, copper, phosphorus, decaborane, gallium halide, indium halide, antimony halide, arsenic halide, gallium halide, aluminum iodide, titanium iodide, MoO 2 Cl 2 、MoOCl 4 、MoCl 5 、WCl 5 、WOCl 4 、WCl 6 、cyclopentadienylcycloheptatrienyltitanium (CpTiCht), cyclooctatetraenylcyclopentadienyltitanium, dicyclopentadienyltitanium bisazide, In(CH 3 ) 2 (hfac), hydrogen antimonydibromide, tungsten carbonyl, metal organic β-diketone complex, metal organic alkoxide complex, metal organic carboxylate complex, metal organic aryl complex, metal organic amide complex, or any combination thereof. In some embodiments, the vaporizable precursor comprises at least one of the following, consists of at least one of the following, or consists essentially of at least one of the following: MoO 2 Cl 2 、MoOCl 4 、WO 2 Cl 2 、WOCl 4 or any combination thereof. In some embodiments, the first precursor gas comprises at least one of the following: decaborane, (B 10 H 1 4 )、pentaborane (B 5 H 9 )、octadecaborane (B 1 8 H 22 ) Boric acid (H 3 BO 3 ) SbCl 3 、SbCl 5 or any combination thereof. In some embodiments, the first precursor gas comprises at least one of the following: AsCl 3 、AsBr 3 、AsF 3 、AsF 5 、AsH 3 、As 4 O 6 、As 2 Se 3 m、As 2 S 2 、As 2 S 3 、As 2 S 5 、As 2 Te 3 、B 4 H 11 、B 4 H 10 、B 3 H 6 N 3 、BBr 3 、BCl 3 、BF 3、BF 3 O(C 2 H 5 ) 2 、BF 3 HIGH 3 、B 2 H 6 、F 2 、HF、GeBr 4 、GeCl 4 、GeF 4 、GeH 4 、H 2 、HCl、H 2 The、H 2 The、H 2 S、WF 6 、SiH 4 、SiH 2 Cl 2 、SiHCl 3 、SiCl 4 、SiH 3 Cl、Si 2 Cl 6 、NH 3 、NH 3 、Ar、Br 2 、HBr、BrF 5 、CO 2 、CO、COCl 2 、COF 2 、Cl 2 、ClF 3 、CF 4 、C 2 F 6 、C 3 F 8 、C 4 F 8 、C 5 F 8 、CHF 3 、CH 2 F 2 、CH 3 F、CH 4 、SiH 6 、He、HCN、Cr、And、Ni(CO) 4 、HNO 3 、NO、N 2 、NO 2 、NF 3 、N 2 O、C 8 H 24 Oh 4 Yes 4 、PH 3 、POCl 3 、PCl 5 、PF 3 、PFS、SbH 3 、SO 2 、SF 6 、SF 4 、Si(OC 2 H 5 ) 4 、C 4 H 1 6 If 4 O 4 、Si(CH 3 ) 4 、SiH(CH 3 ) 3 、TiCl 4 、X、SiF 4 、WOF 4 、TaBr 5 、TaCl 5 、TaF 5 、Sb(C 2 H 5 ) 3 、Sb(CH 3 ) 3 、I(CH 3 ) 3 、PBr 5 、PBr 3, RuF 5 or any combination thereof. It should be understood that other precursors may be used herein without departing from the present invention. In some embodiments, the first precursor gas is a metal precursor. In some embodiments, method 100 for forming a film includes flowing 104 a feed gas to an ozone generator to generate a second precursor gas. In some embodiments, flowing 104 includes supplying the feed gas to the ozone generator. In some embodiments, flowing 104 includes pumping the feed gas to the ozone generator. In some embodiments, flowing 104 includes introducing the feed gas into the ozone generator. In some embodiments, flowing 104 includes transporting the feed gas to the ozone generator. In some embodiments, flowing 104 includes (e.g.,) sucking the feed gas into the ozone generator under vacuum. In some embodiments, flowing 104 includes directly flowing the feed gas to the ozone generator to generate the second precursor gas. In some embodiments, flowing 104 includes flowing a first feed gas to the ozone generator and flowing a second feed gas to the ozone generator. In some embodiments, the first feed gas is different from the second feed gas. In some embodiments, the first feed gas includes (e.g.,) nitrogen and / or N 2 . In some embodiments, the second feed gas includes an oxidizing gas. In some embodiments, flowing 104 includes flowing a single gas stream including the feed gas. In some embodiments, the feed gas includes at least 1% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas includes at least 2% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas includes at least 5% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas includes at least 10% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas includes at least 15% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas includes at least 20% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas includes at least 25% by volume of N based on the total volume of the feed gas 2. In some embodiments, the feed gas comprises at least 30% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 35% by volume of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises from 1% to 40% by volume of N based on the total volume of the feed gas 2 Or any range or sub-range between 1% and 40%. For example, in some embodiments, the feed gas comprises from 1% to 40% by weight, from 1% to 35% by weight, from 1% to 30% by weight, from 1% to 25% by weight, from 1% to 20% by weight, from 1% to 15% by weight, from 1% to 10% by weight, from 1% to 5% by weight, from 5% to 40% by weight, from 10% to 40% by weight, from 15% to 40% by weight, from 20% to 40% by weight, from 25% to 40% by weight, from 30% to 40% by weight, or from 35% to 40% by weight of N based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 50% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 60% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 65% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 70% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 75% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 80% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 85% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises at least 90% by volume of O based on the total volume of the feed gas 2 . In some embodiments, the feed gas comprises from 50% to 99% by volume of O based on the total volume of the feed gas 2 or any range or sub-range between 50% and 99%. For example, in some embodiments, the feed gas comprises 50 volume % to 99 volume %, 50 volume % to 90 volume %, 50 volume % to 85 volume %, 50 volume % to 80 volume %, 50 volume % to 75 volume %, 50 volume % to 70 volume %, 50 volume % to 65 volume %, 50 volume % to 60 volume %, 50 volume % to 55 volume %, 55 volume % to 99 volume %, 60 volume % to 99 volume %, 65 volume % to 99 volume %, 70 volume % to 99 volume %, 75 volume % to 99 volume %, 80 volume % to 99 volume %, 85 volume % to 99 volume %, or 90 volume % to 99 volume % of O based on the total volume of the feed gas. 2 . In some embodiments, the feed gas comprises 0.1 volume % to 20 volume % of H based on the total volume of the feed gas. 2 or any range or sub-range between 0.1% and 20%. For example, in some embodiments, the feed gas comprises 0.1% to 19%, 0.1% to 18%, 0.1% to 17%, 0.1% to 16%, 0.1% to 15%, 0.1% to 14%, 0.1% to 13%, 0.1% to 12%, 0.1% to 11%, 0.1% to 10%, 0.1% to 9%, 0.1% to 8%, 0.1% to 7%, 0.1% to 6%, 0.1% to 5%, 0.1% to 4%, 0.1% to 3%, 0.1% to 2%, 0.1% to 1%, 0.1% to 0.9%, 0.1% to 0.8%, 0.1% to 0.7%, 0.1% to 0.6%, 0.1% to 0.5%, 0.1% to 0.4%, 0.1% to 0.3%, 0.1% to 0.2%, 1% to 20%, 2% to 20%, 3% to 20%, 4% to 20%, 5% to 20%, 6% to 20%, 7% to 20%, 8% to 20%, 9% to 20%, 10% to 20%, 11% to 20%, 12% to 20%, 13% to 20%, 14% to 20%, 15% to 20%, 16% to 20%, 17% to 20%, 18% to 20%, or 19% to 20%. In some embodiments, the second precursor gas comprises ozone (O 3 ). In some embodiments, the second precursor gas further comprises at least one of the following: elemental oxygen (O), oxygen gas (O 2 ), water (H 2 O), hydrogen peroxide (H 2 O 2 ) nitrous oxide (N 2 O), nitric oxide (NO), dinitrogen pentoxide (N 2 O 5 ), nitrogen dioxide (NO 2 ), NO 3 or any combination thereof. In some embodiments, the second precursor gas includes one or more of the first precursor gases. In some embodiments, method 100 for forming a film includes exposing 106 a substrate to a second precursor gas to form a film on the substrate. In some embodiments, exposing 106 includes exposing the substrate to the second precursor gas to form a film on at least one structure of the substrate. In some embodiments, exposing 106 includes introducing the second precursor gas into a chamber containing the substrate. In some embodiments, exposing 106 includes flowing the second precursor gas into a chamber containing the substrate. In some embodiments, exposing 106 includes supplying the second precursor gas to a chamber containing the substrate. In some embodiments, exposing 106 includes pumping the second precursor gas into a chamber containing the substrate. In some embodiments, exposing 106 includes pulsing the second precursor gas into a chamber containing the substrate. In some embodiments, exposing 106 includes pulsing the second precursor gas into a chamber containing the substrate for a duration. In some embodiments, exposing 106 is sufficient to bring the second precursor gas and the substrate into direct or close proximity or direct physical contact. In some embodiments, exposure 106 includes pulsing a second precursor gas into a chamber containing a substrate for a duration. In some embodiments, the duration is one duration of any range or sub-range between 0.01 seconds and 60 minutes or longer or between 0.01 seconds and 60 minutes. For example, in some embodiments, the duration is one duration of 0.01 seconds to 50 minutes, 0.01 seconds to 40 minutes, 0.01 seconds to 30 minutes, 0.01 seconds to 20 minutes, 0.01 seconds to 10 minutes, 0.01 seconds to 1 minute, 0.01 seconds to 45 seconds, 0.01 seconds to 30 seconds, 0.01 seconds to 15 seconds, 0.01 seconds to 10 seconds, 0.01 seconds to 5 seconds, 0.01 seconds to 3 seconds, 0.01 seconds to 1 second, 0.01 seconds to 0.5 seconds, 0.01 seconds to 0.1 seconds, or 0.01 seconds to 0.05 seconds. In some embodiments, the duration is one duration of 0.05 seconds to 60 minutes, 0.10 seconds to 60 minutes, 0.2 seconds to 60 minutes, 0.3 seconds to 60 minutes, 0.4 seconds to 60 minutes, 0.5 seconds to 60 minutes, 0.6 seconds to 60 minutes, 0.7 seconds to 60 minutes, 0.8 seconds to 60 minutes, 0.9 seconds to 60 minutes, 1 second to 60 minutes, 3 seconds to 60 minutes, 5 seconds to 60 minutes, 15 seconds to 60 minutes, 30 seconds to 60 minutes, 1 minute to 60 minutes, 10 minutes to 60 minutes, 20 minutes to 60 minutes, 30 minutes to 60 minutes, 40 minutes to 60 minutes, or 50 minutes to 60 minutes. In some embodiments, the duration is one duration of any range or sub-range between 0.01 seconds and 5 minutes or longer or between 0.01 seconds and 5 minutes. For example, in some embodiments, the duration is one duration of 0.01 seconds to 4 minutes, 0.01 seconds to 3 minutes, 0.01 seconds to 2 minutes, 0.01 seconds to 1 minute, 0.01 seconds to 50 seconds, 0.01 seconds to 40 seconds, 0.01 seconds to 30 seconds, 0.01 seconds to 20 seconds, 0.01 seconds to 10 seconds, 0.01 seconds to 5 seconds, 0.01 seconds to 3 seconds, 0.01 seconds to 1 second, 0.01 seconds to 0.5 seconds, 0.01 seconds to 0.1 seconds, or 0.01 seconds to 0.05 seconds. In some embodiments, the duration is one duration of 0.05 seconds to 5 minutes, 0.10 seconds to 5 minutes, 0.2 seconds to 5 minutes, 0.3 seconds to 5 minutes, 0.4 seconds to 5 minutes, 0.5 seconds to 5 minutes, 0.6 seconds to 5 minutes, 0.7 seconds to 5 minutes, 0.8 seconds to 5 minutes, 0.9 seconds to 5 minutes, 1 second to 5 minutes, 3 seconds to 5 minutes, 5 seconds to 5 minutes, 15 seconds to 5 minutes, 30 seconds to 5 minutes, 1 minute to 5 minutes, 2 minutes to 5 minutes, 3 minutes to 5 minutes, or 4 minutes to 5 minutes. In some embodiments, exposure 106 is performed at a temperature of 100 °C to 500 °C or any range or sub-range between 100 °C and 500 °C. For example, in some embodiments, exposure 102 is performed at a temperature of 100 °C to 475 °C, 100 °C to 450 °C, 100 °C to 425 °C, 100 °C to 400 °C, 100 °C to 375 °C, 100 °C to 350 °C, 100 °C to 325 °C, 100 °C to 300 °C, 100 °C to 275 °C, 100 °C to 250 °C, 100 °C to 225 °C, 100 °C to 200 °C, 100 °C to 175 °C, 100 °C to 150 °C, 100 °C to 125 °C, 125 °C to 500 °C, 150 °C to 500 °C, 175 °C to 500 °C, 200 °C to 500 °C, 225 °C to 500 °C, 250 °C to 500 °C, 275 °C to 500 °C, 300 °C to 500 °C, 325 °C to 500 °C, 350 °C to 500 °C, 375 °C to 500 °C, 400 °C to 500 °C, 425 °C to 500 °C, 450 °C to 500 °C, or 475 °C to 500 °C. In some embodiments, the resulting film has a first-class coverage of at least 90%. For example, in some embodiments, the film has a first-class coverage of at least 90%, at least 91%, at least 92%, at least 93%, at least 94%, at least 95%, at least 96%, at least 97%, at least 98%, at least 99%, or greater. In some embodiments, the film has a first-class coverage of 90% to 100% or any range or sub-range between 90% and 100%. For example, in some embodiments, the film has a first-class coverage of 90% to 99%, 90% to 98%, 90% to 97%, 90% to 96%, 90% to 95%, 90% to 94%, 90% to 93%, 90% to 92%, 90% to 91%, 91% to 100%, 92% to 100%, 93% to 100%, 94% to 100%, 95% to 100%, 96% to 100%, 97% to 100%, 98% to 100%, 99% to 100%, 91% to 99%, 92% to 99%, 93% to 99%, 94% to 99%, 95% to 99%, 96% to 99%, 97% to 99%, or 98% to 99%. In some embodiments, the film comprises a metal oxide. In some embodiments, for example, the film comprises hafnium oxide. In some embodiments, the film comprises zirconium oxide. In some embodiments, the film comprises aluminum oxide. In some embodiments, the film comprises titanium oxide. In some embodiments, the film comprises tantalum oxide. In some embodiments, the film comprises niobium oxide. In some embodiments, the film comprises vanadium oxide. In some embodiments, the film comprises gallium oxide. In some embodiments, the film comprises indium oxide. In some embodiments, the film comprises silicon oxide. The film can have a thickness of 1 nm to 5 μm or any range or sub-range therebetween. In some embodiments, for example, the film has a thickness of 1 nm to 4 μm, 1 nm to 3 μm, 1 nm to 2 μm, 1 nm to 1 μm, 1 nm to 900 nm, 1 nm to 800 nm, 1 nm to 700 nm, 1 nm to 600 nm, 1 nm to 500 nm, 1 nm to 400 nm, 1 nm to 300 nm, 1 nm to 200 nm, 1 nm to 100 nm, 100 nm to 5 μm, 200 nm to 5 μm, 300 nm to 5 μm, 400 nm to 5 μm, 500 nm to 5 μm, 600 nm to 5 μm, 700 nm to 5 μm, 800 nm to 5 μm, 900 nm to 5 μm, 1 μm to 5 μm, 2 μm to 5 μm, 3 μm to 5 μm, or 4 μm to 5 μm. In some embodiments, the film has a thickness of 0.1 nm to 10 nm, 0.1 m to 9 nm, 0.1 nm to 8 nm, 0.1 nm to 7 nm, 0.1 nm to 6 nm, or 0.1 nm to 5 nm. The film can have a concentration of less than 1×10 20 hydrogen atoms per cubic centimeter as measured by secondary ion mass spectrometry (SIMS). For example, in some embodiments, the film can have less than 1×10 20 hydrogen atoms per cubic centimeter, less than 0.9×10 20 hydrogen atoms per cubic centimeter, less than 0.8×10 20 hydrogen atoms per cubic centimeter, less than 0.7×10 20 hydrogen atoms per cubic centimeter, less than 0.6×10 20 hydrogen atoms per cubic centimeter, less than 0.5×10 20hydrogen atoms per cubic centimeter, less than 0.4×10 20 hydrogen atoms per cubic centimeter, less than 0.3×10 20 hydrogen atoms per cubic centimeter, less than 0.2×10 20 hydrogen atoms per cubic centimeter or less than 0.1×10 20 hydrogen atoms per cubic centimeter. In some embodiments, the film may have less than 9×10 19 hydrogen atoms per cubic centimeter, less than 8×10 19 hydrogen atoms per cubic centimeter, less than 7×10 19 hydrogen atoms per cubic centimeter, less than 6×10 19 hydrogen atoms per cubic centimeter, less than 5×10 19 hydrogen atoms per cubic centimeter, less than 4×10 19 hydrogen atoms per cubic centimeter, less than 3×10 19 hydrogen atoms per cubic centimeter, less than 2×10 19 hydrogen atoms per cubic centimeter or less than 1×10 19 hydrogen atoms per cubic centimeter. The film may have a concentration of less than 10×10 18 carbon atoms per cubic centimeter as measured by SIMS. For example, in some embodiments, the film has less than 10×10 18 carbon atoms per cubic centimeter, less than 9×10 18 carbon atoms per cubic centimeter, less than 8×10 18 carbon atoms per cubic centimeter, less than 7×10 18 carbon atoms per cubic centimeter, less than 6×10 18 carbon atoms per cubic centimeter, less than 5×10 18 carbon atoms per cubic centimeter, less than 4×10 18 carbon atoms per cubic centimeter, less than 3×10 18 carbon atoms per cubic centimeter, less than 2×10 18 carbon atoms per cubic centimeter or less than 1×10 18 a concentration of carbon atoms per cubic centimeter. In some embodiments, method 100 does not include flowing a feed gas to an ozone generator to generate an ozone component and / or flowing NO x gas to combine with the ozone component to generate a second precursor gas. FIG. 2 is a block diagram of a system 200 for a vapor deposition according to some embodiments. As shown in FIG. 2, in some embodiments, system 200 includes a feed gas that includes O 2 and N 2 . In some embodiments, O 2 is supplied from an oxygen source 202 and N 2 is supplied from a nitrogen source 204. Although O 2 and N 2 are shown as being supplied in separate gas streams, it should be understood that other configurations are possible, such as (by way of example and not limitation), O 2 and N 2 can be supplied in a single stream or more than two streams, etc. O 2 from the oxygen source 202 and N 2 from the nitrogen source 204 are flowed to an ozone generator 208 to generate a second precursor gas 214. In some embodiments, the second precursor 214 includes ozone (O 3 ). In some embodiments, system 200 includes a metal precursor source 210 for supplying a metal precursor to a vapor deposition apparatus 212 (such as a chamber). In some embodiments, system 200 includes means for supplying an inert gas (such as (by way of example and not limitation) N 2An inert source 206 supplied to a vapor deposition apparatus 212. At the vapor deposition apparatus 212, a vapor deposition process is performed to form a film on at least one structure of a substrate, on which the film has at least 90% of a first-class coverage. Some embodiments relate to a device, such as (e.g., but not limited to) a device for semiconductor applications and other microelectronic applications. In some embodiments, the device includes any film disclosed herein. In some embodiments, for example, the device includes a substrate having at least one structure with a high aspect ratio. In some embodiments, the device includes at least a film positioned on at least one structure with a high aspect ratio. In some embodiments, the film is positioned on the device with an improved step coverage. In some embodiments, the film directly contacts the substrate and / or at least one structure. In some embodiments, the device includes a substrate. In some embodiments, the substrate is a high aspect ratio substrate. For example, in some embodiments, a high aspect ratio substrate includes a substrate having at least one structure with a high aspect ratio. In some embodiments, the substrate may have a plurality of structures, where each of the plurality of structures has a high aspect ratio. The at least one structure is not particularly limited, but may include any structure having a high aspect ratio disclosed herein. In some embodiments, the at least one structure includes at least one of a trench, a gas chamber, a cavity, a hole, a channel, or any combination thereof. The at least one structure on the substrate may be a structure having an aspect ratio of at least 10:1. For example, in some embodiments, the substrate has at least one structure having an aspect ratio of at least 10:1, at least 20:1, at least 30:1, at least 40:1, at least 50:1, at least 60:1, at least 70:1, at least 80:1, or at least 90:1. In some embodiments, the substrate has at least one structure having an aspect ratio of 10:1 to 100:1, 10:1 to 90:1, 10:1 to 80:1, 10:1 to 70:1, 10:1 to 60:1, 10:1 to 50:1, 10:1 to 40:1, 10:1 to 30:1, 10:1 to 20:1, 20:1 to 100:1, 30:1 to 100:1, 40:1 to 100:1, 50:1 to 100:1, 60:1 to 100:1, 70:1 to 100:1, 80:1 to 100:1, or 90:1 to 100:1. In some embodiments, the at least one structure and the substrate are a single unitary piece. In some embodiments, the at least one structure and the substrate are manufactured separately and assembled together. The substrate may include a film formed on one of its surfaces, as disclosed herein. In some embodiments, the substrate includes at least one of silicon, silicon oxide, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, a glass, a sapphire, a metal, a metal nitride, a metal alloy, or any combination thereof. In some embodiments, the device includes a film positioned on the substrate. In some embodiments, the film directly contacts the substrate. In some embodiments, the film is positioned on at least one structure. In some embodiments, the film directly contacts one or some surfaces of at least one structure. In some embodiments, the film covers the at least one structure with a coverage of at least 90% in one class. In some embodiments, for example, the film covers the at least one structure with a coverage of at least 90%, at least 91%, at least 92%, at least 93%, at least 94%, at least 95%, at least 96%, at least 97%, at least 98%, or at least 99% in one class. In some embodiments, the film covers the at least one structure with a coverage in any range or sub-range between 90% and 100%, 90% and 99%, 90% and 98%, 90% and 97%, 90% and 96%, 90% and 95%, 90% and 94%, 90% and 93%, 90% and 92%, 90% and 91%, 91% and 100%, 92% and 100%, 93% and 100%, 94% and 100%, 95% and 100%, 96% and 100%, 97% and 100%, 98% and 100%, 99% and 100%, or 90% and 100% in one class. In some embodiments, the film includes a metal oxide. In some embodiments, for example, the film includes hafnium oxide. In some embodiments, the film includes zirconium oxide. In some embodiments, the film includes aluminum oxide. In some embodiments, the film includes titanium oxide. In some embodiments, the film includes tantalum oxide. In some embodiments, the film includes niobium oxide. In some embodiments, the film includes vanadium oxide. In some embodiments, the film includes gallium oxide. In some embodiments, the film includes indium oxide. In some embodiments, the film includes silicon oxide. The film may have a thickness in any range or sub-range between 5 nm and 5 μm or from 5 nm to 5 μm. In some embodiments, for example, the film has a thickness of 5 nm to 4 μm, 5 nm to 3 μm, 5 nm to 2 μm, 5 nm to 1 μm, 5 nm to 900 nm, 5 nm to 800 nm, 5 nm to 700 nm, 5 nm to 600 nm, 5 nm to 500 nm, 5 nm to 400 nm, 5 nm to 300 nm, 5 nm to 200 nm, 5 nm to 100 nm, 100 nm to 5 μm, 200 nm to 5 μm, 300 nm to 5 μm, 400 nm to 5 μm, 500 nm to 5 μm, 600 nm to 5 μm, 700 nm to 5 μm, 800 nm to 5 μm, 900 nm to 5 μm, 1 μm to 5 μm, 2 μm to 5 μm, 3 μm to 5 μm, or 4 μm to 5 μm. The film may have a concentration of less than 1×10 20 hydrogen atoms per cubic centimeter as measured by secondary ion mass spectrometry (SIMS). For example, in some embodiments, the film may have less than 1×10 20 hydrogen atoms per cubic centimeter, less than 0.9×10 20 hydrogen atoms per cubic centimeter, less than 0.8×10 20 hydrogen atoms per cubic centimeter, less than 0.7×10 20 hydrogen atoms per cubic centimeter, less than 0.6×10 20 hydrogen atoms per cubic centimeter, less than 0.5×10 20 hydrogen atoms per cubic centimeter, less than 0.4×10 20 hydrogen atoms per cubic centimeter, less than 0.3×10 20 hydrogen atoms per cubic centimeter, less than 0.2×10 20 hydrogen atoms per cubic centimeter, or less than 0.1×10 20 hydrogen atoms per cubic centimeter. In some embodiments, the film may have less than 9×10 19 hydrogen atoms per cubic centimeter, less than 8×10 19 hydrogen atoms per cubic centimeter, less than 7×10 19 hydrogen atoms per cubic centimeter, less than 6×10 19 hydrogen atoms per cubic centimeter, less than 5×10 19 hydrogen atoms per cubic centimeter, less than 4×10 19 hydrogen atoms per cubic centimeter, less than 3×10 19 hydrogen atoms per cubic centimeter, less than 2×10 19 hydrogen atoms per cubic centimeter or less than 1×10 19 hydrogen atoms per cubic centimeter, one of the concentrations. The film may have a concentration of less than 10×10 measured by SIMS 18 carbon atoms per cubic centimeter. For example, in some embodiments, the film has less than 10×10 18 carbon atoms per cubic centimeter, less than 9×10 18 carbon atoms per cubic centimeter, less than 8×10 18 carbon atoms per cubic centimeter, less than 7×10 18 carbon atoms per cubic centimeter, less than 6×10 18 carbon atoms per cubic centimeter, less than 5×10 18 carbon atoms per cubic centimeter, less than 4×10 18 carbon atoms per cubic centimeter, less than 3×10 18 carbon atoms per cubic centimeter, less than 2×10 18 carbon atoms per cubic centimeter or less than 1×10 18 carbon atoms per cubic centimeter, one of the concentrations. Example 1 Various alumina films are deposited on a substrate having a high aspect ratio structure by an atomic layer deposition process. The deposition process involves exposing the substrate to AlCl 3from 100 to 200 cycles of the oxidation gas. Each sample relates to a substrate having a trench structure with an aspect ratio of 11:1. Each sample was exposed to AlCl at a temperature of 250 °C 3 and a co-reactant gas. Each sample has a different co-reactant gas. Sample 1 uses water as the co-reactant. Sample 2 uses ozone as the co-reactant. In Sample 2, 100 ppm of N in O 2 flows into a corona discharge ozone generator (MKS O3Mega AX8561) at a power of 50% at 2 slm. Sample 3 uses ozone generated from a mixture of 20% N 2 and 80% O at a power of 39%. The ozone generator has a maximum power of 1750 watts. Growth / cycle (GPC, in Å / cycle), step coverage on the trench structure, and impurity content were measured. The results are summarized in Tables 1 and 2 below. Table 1 2 and 80% O 2 One mixture. The ozone generator has a maximum power of 1750 watts. Growth / cycle (GPC, in Å / cycle), step coverage on the trench structure, and impurity content were measured. The results are summarized in Tables 1 and 2 below. Table 1 Table 2 As shown above, when a mixture of 20% N 2 and 80% O 2 is supplied to the ozone generator and the substrate is exposed to the ozone-containing gas from the ozone generator, the step coverage of the alumina film in Sample 3 is suddenly improved. Using this procedure, low C and low H relative to other samples were measured in the resulting film in Sample 3 2 content. In addition, Sample 3 exhibits improved growth / cycle relative to other samples. Aspect Various aspects are described below. It should be understood that any one or more of the features described in the following aspects can be combined with any one or more of the other aspects. Aspect 1. A device comprising: a substrate having at least one structure with an aspect ratio of at least 10:1; and a film positioned on the at least one structure with a step coverage of at least 90%; wherein the film comprises: a metal oxide or a metalloid oxide; and less than 1 × 10 measured by SIMS 20a concentration of one hydrogen atom per cubic centimeter. Aspect 2. The device according to Aspect 1, wherein the substrate comprises at least one of silicon, silicon oxide, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, a glass, a sapphire, a metal, a metal nitride, a metal alloy, or any combination thereof. Aspect 3. The device according to any one of Aspects 1 to 2, wherein the at least one structure is defined by the substrate and comprises at least one of a trench, a gas chamber, a cavity, a hole, a channel, or any combination thereof. Aspect 4. The device according to any one of Aspects 1 to 3, wherein the aspect ratio of the at least one structure is 10:1 to 100:1. Aspect 5. The device according to any one of Aspects 1 to 4, wherein the film directly contacts a surface of the at least one structure. Aspect 6. The device according to any one of Aspects 1 to 5, wherein the film comprises at least one of hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, vanadium oxide, gallium oxide, indium oxide, silicon oxide, or any combination thereof. Aspect 7. The device according to any one of Aspects 1 to 6, wherein the film has a thickness of 1 nm to 5 μm. Aspect 8. The device according to any one of Aspects 1 to 7, wherein the film has a thickness of 1 nm to 500 nm. Aspect 9. The device according to any one of Aspects 1 to 8, wherein the film comprises less than 10×10 18 carbon atoms per cubic centimeter as measured by SIMS. Aspect 10. A method comprising: exposing a substrate having at least one structure with an aspect ratio of at least 10:1 to a first precursor gas; flowing a feed gas to an ozone generator to generate a second precursor gas, the feed gas comprising at least 1 volume % of N based on the total volume of the feed gas 2 ; exposing the substrate to the second precursor gas to form a film having at least 90% step coverage on the at least one structure of the substrate. Aspect 11. The method according to Aspect 10, wherein the substrate comprises at least one of silicon, silicon oxide, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, a glass, a sapphire, a metal, a metal nitride, a metal alloy, or any combination thereof. Aspect 12. The method according to any one of Aspects 10 to 11, wherein the at least one structure is defined by the substrate and comprises at least one of a trench, a gas chamber, a cavity, a hole, a channel, or any combination thereof. Aspect 13. The method according to any one of Aspects 10 to 12, wherein the aspect ratio of the at least one structure is 10:1 to 100:1. Aspect 14. The method according to any one of Aspects 10 to 13, wherein the first precursor gas comprises SiCl 4 、hexachloroethane, HfCl 4 , ZrCl 4 , AlCl 3 , trimethylaluminum, TiCl 4 , TaCl 5 , NbCl 5 , VCl 4 , GaCl 3 , InCl 3 , at least one of tris(dimethylamido)cyclopentadienyl hafnium, tris(dimethylamido)cyclopentadienyl zirconium, tetra(ethylmethylamino)hafnium, tetra(ethylmethylamino)zirconium, tetra(diethylamino)hafnium, tetra(dimethylamino)hafnium, or any combination thereof. Aspect 15. The method according to any one of Aspects 10 to 14, wherein the feed gas comprises: 2% to 40% by volume of N based on the total volume of the feed gas 2 ; and 60% to 98% by volume of O based on the total volume of the feed gas 2 . Aspect 16. The method according to any one of Aspects 10 to 15, wherein the feed gas comprises: 10% to 30% by volume of N based on the total volume of the feed gas 2 ; and 70% to 90% by volume of O based on the total volume of the feed gas 2 . Aspect 17. The method according to any one of Aspects 10 to 16, wherein the second precursor gas comprises ozone (O 3 ). Aspect 18. The method according to any one of Aspects 10 to 17, wherein the second precursor gas further comprises oxygen (O 2 ), water (H 2 O), hydrogen peroxide (H 2 O 2 ), nitrous oxide (N 2 O), nitric oxide (NO), dinitrogen pentoxide (N 2 O 5 )), nitrogen dioxide (NO 2 ) or at least one of any combination thereof. Aspect 19. The method according to any one of aspects 10 to 18, wherein the film comprises: a metal oxide or a metalloid oxide; and less than 1×10 20 hydrogen atoms per cubic centimeter as measured by SIMS. Aspect 20. The method according to any one of aspects 10 to 19, wherein the film comprises at least one of hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, vanadium oxide, gallium oxide, indium oxide, silicon oxide or any combination thereof. It should be understood that changes can be made to the details, especially the construction materials, and the shape, size and configuration of the parts, without departing from the scope of the present invention. The present specification and the described embodiments are only examples, and the true scope and spirit of the present invention are indicated by the following claims. 100: Method 102: Exposure / Step 104: Flow / Step 106: Exposure / Step 200: System 202: Oxygen Source 204: Nitrogen Source 206: Inert Source 208: Ozone Generator 210: Metal Precursor Source 212: Vapor Deposition Equipment 214: Second Precursor Gas Some embodiments of the present invention are described herein by way of example with reference to the accompanying drawings. Referring now in detail to the drawings, it should be emphasized that the illustrated embodiments are for illustrative purposes only and for an illustrative discussion of the embodiments of the present invention. In this regard, the description in conjunction with the drawings enables those skilled in the art to understand how the embodiments of the present invention can be practiced. FIG. 1 is a flowchart of a method for forming a film according to some embodiments. FIG. 2 is a block diagram of a system for vapor deposition according to some embodiments. 100: Method 102: Exposure / Step 104: Flow / Step 106: Exposure / Step

Claims

1. An apparatus for a vapor deposition process, comprising: A substrate having at least one structure having an aspect ratio of at least 10:1; and a membrane located on the at least one structure with at least 90% of its surface area covered by a layer; wherein the membrane comprises: a metal oxide or metal-like oxide; and a concentration of less than 1 × 10²⁰ hydrogen atoms per cubic centimeter as measured by SIMS.

2. The apparatus of claim 1, wherein the substrate comprises at least one of silicon, silicon oxide, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, a glass, a sapphire, a metal, a metal nitride, a metal alloy, or any combination thereof.

3. The apparatus of claim 1, wherein the at least one structure is defined by the substrate and includes at least one of a trench, a chamber, a cavity, a hole, a channel, or any combination thereof.

4. The apparatus of claim 1, wherein the aspect ratio of the at least one structure is from 10:1 to 100:

1.

5. The apparatus of claim 1, wherein the membrane comprises less than 10 × 10¹⁸ carbon atoms per cubic centimeter as measured by SIMS.

6. A method for forming a membrane, comprising: A substrate having at least one structure having an aspect ratio of at least 10:1 is exposed to a first precursor gas; A feed gas is flowed to an ozone generator to generate a second precursor gas, the feed gas comprising at least 1% by volume N2 based on a total volume of the feed gas; the substrate is exposed to the second precursor gas to form a film having at least 90% step coverage on the at least one structure of the substrate, wherein the film comprises: a metal oxide or metal-like oxide; and a concentration of less than 1 × 10²⁰ hydrogen atoms per cubic centimeter as measured by SIMS.

7. The method of claim 6, wherein the at least one structure is defined by the substrate and includes at least one of a trench, a chamber, a cavity, a hole, a channel, or any combination thereof.

8. The method of claim 6, wherein the first precursor gas comprises at least one of SiCl4, hexachlorosilane, HfCl4, ZrCl4, AlCl3, trimethylaluminum, TiCl4, TaCl5, NbCl5, VCl4, GaCl3, InCl3, tris(dimethylamino)cyclopentadienylhafnium, tris(dimethylamino)cyclopentadienylzirconium, tetra(ethylmethylamino)hafnium, tetra(ethylmethylamino)zirconium, tetra(diethylamino)hafnium, tetra(dimethylamino)hafnium, or any combination thereof.

9. The method of claim 6, wherein the second precursor gas further comprises at least one of oxygen (O2), water (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), dinitric oxide (N2O5), nitrogen dioxide (NO2), or any combination thereof.

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