Polishing articles for hybrid bonding applications, method of forming polishing articles, and method of polishing substrate

Abstract

Printable resin precursor compositions and polishing articles comprising printable resin precursors are provided, the compositions and polishing articles being particularly suitable for polishing substrates used in hybrid bonding applications. The methods and articles may include a plurality of first polishing elements, wherein at least one of the plurality of first polymer layers forms a polishing surface; and one or more second polishing elements, wherein at least a region of each of the one or more second polishing elements is disposed between at least one of the plurality of first polishing elements and a supporting surface of a polishing pad. The one or more first polishing elements have a Shore D hardness greater than 60, the one or more second polishing elements have a Shore D hardness of about 20 to less than 60, and the polishing article has a total Shore D hardness greater than or about 50.

Description

Polishing products for mixed bonding applications This application claims the benefit of and priority to U.S. patent application Ser. No. 18 / 486,094, filed on Oct. 12, 2023, entitled “POLISHING ARTICLES FOR HYBRID BONDING APPLICATIONS,” which is hereby incorporated by reference in its entirety. The present technology relates to components and devices used in semiconductor manufacturing. More particularly, the present technology relates to polishing articles that exhibit improved polishing, such as in hybrid bonding applications. Chemical mechanical polishing (CMP) is a well-known process used in many different industries to planarize substrate surfaces. In the semiconductor industry, as device feature sizes continue to decrease, polishing and planarization uniformity become increasingly important. During the CMP process, a substrate, such as a silicon wafer, is mounted on a carrier head, where the device surface rests against a rotating polishing pad. The carrier head provides a controllable load on the substrate to push the device surface against the polishing pad. A polishing liquid, such as a slurry containing abrasive particles, is typically supplied to the surface of the moving polishing pad and polishing head. The polishing pad and polishing head apply mechanical energy to the substrate, and the pad also helps control the transport of the slurry, which interacts with the substrate during the polishing process. However, current polishing pads are formed from molded, cast, or sintered polyurethane materials, resulting in uneven polishing and poorly tuned properties. Furthermore, existing machining methods result in a high degree of variability in the finished product, which can also lead to undesirable pad properties. Therefore, there is a need for improved polishing pad materials and methods that can be used to produce high quality polishing articles, such as those used in hybrid bonding applications. The present technology addresses these and other needs. The present technology generally relates to methods for forming polishing articles and polishing articles produced therefrom. The method includes depositing one or more droplets of a first curable precursor formulation onto a support member using an additive manufacturing system. The method includes depositing one or more droplets of a second curable precursor formulation onto the one or more droplets of the first curable precursor formulation using the additive manufacturing system. The method includes depositing one or more droplets of a second curable precursor formulation onto the one or more droplets of the first curable precursor formulation using the additive manufacturing system. The method includes depositing one or more droplets of a second curable precursor formulation onto the one or more droplets of the first curable precursor formulation. The method includes depositing the second curable precursor formulation onto the one or more droplets of the first curable precursor formulation. The method includes depositing the second curable precursor formulation onto the one or more droplets of the first curable precursor formulation. The method includes depositing the second curable precursor formulation onto the one or more droplets of the first curable precursor formulation. The method includes curing the first curable precursor formulation and the second curable precursor formulation, wherein the polishing article has a total polishing article Shore D hardness of greater than or about 20 to less than or about 200. In embodiments, the method includes wherein the first curable precursor formulation, the second curable precursor formulation, or both the first curable precursor formulation and the second curable precursor formulation comprise a polymeric material, wherein the polymeric material comprises one or more of polyamides, polycarbonates, polyesters, polyethers, polyetherketones, polyethers, polyoxymethylenes, polyethersulfones, polyetherimides, polyamides, polyolefins, polysiloxanes, polysulfones, polyphenylenes, polyphenylene sulfide, polyurethanes, polyacrylonitrile, polyacrylates, polymethyl methacrylates, polyurethane acrylates, polyester acrylates, polyether acrylates, epoxy acrylates, polycarbonates, polyesters, melamines, polysulfones, polyethylene materials, acrylonitrile butadiene styrene (ABS), halogenated polymers, block copolymers, and copolymers thereof. In one embodiment, the polymeric material comprises a UV-curable acrylate having one or more of: polyester functionality, urethane functionality, epoxy functionality, thiol functionality, or a combination thereof. In one embodiment, the second curable precursor formulation is deposited in a pattern comprising: discrete, spaced-apart pillars, one or more circles about a central axis, one or more spirals, or a combination thereof. The present technology also generally relates to polishing articles. The article includes a polishing surface configured to polish a surface of a substrate having at least one copper feature. The polishing surface includes a plurality of first polishing elements, each of the first polishing elements having a plurality of first polymer layers comprising a first polymer composition, wherein at least one of the first polymer layers forms the polishing surface. The polishing surface includes one or more second polishing elements, each of the one or more second polishing elements having a plurality of second polymer layers comprising a second polymer composition, wherein at least a region of each of the one or more second polishing elements is disposed between at least one of the first polishing elements and a support surface of the polishing article. The article includes a method wherein at least a portion of the first polishing elements has a Shore D hardness, and at least a portion of the one or more second polishing elements has a second Shore D hardness, wherein the Shore D hardness of the first polishing elements is at least about 5% greater than the second Shore D hardness of the second polishing elements, and wherein the polishing article has a total Shore D hardness of greater than or about 50. In embodiments, at least a portion of the first polishing elements has a Shore D hardness of greater than or about 70. In further embodiments, the polishing article exhibits a storage modulus at 30°C (E30), a storage modulus at 90°C (E90), or both E30 and E90 of less than or about 1200 MPa. In further embodiments, the ratio of the storage modulus at 30°C (E30) to the storage modulus at 90°C (E90) is from about 6 to about 30. Furthermore, in embodiments, one or more of the first polishing elements, one or more of the second polishing elements, or a combination thereof comprises a pore former. Additionally or alternatively, in embodiments, the pore former is dispersed in one or more of the first polishing elements, one or more of the second polishing elements, or a combination thereof to provide a porosity of from about 1% to about 50% by volume. In embodiments, a groove height is defined between the top surfaces of the first polishing elements and one or more of the second polishing elements, wherein the groove height is less than or about 1000 microns. In embodiments, adjacent ones of the first polishing elements define a groove width between them, wherein the groove width is less than or about 1000 microns. Furthermore, in embodiments, the first polishing elements have an average Shore D hardness greater than 60, wherein a first portion of the first polishing elements has a Shore D hardness greater than 70, and a second portion of the first polishing elements has a porosity of about 1% to about 50% by volume, or a combination thereof. In further embodiments, at least a portion of the first polishing elements form a pattern comprising discrete, spaced-apart pillars, one or more circles about a central axis, one or more spirals, or a combination thereof. The present technology also generally relates to a method for polishing a substrate. The method includes engaging a support surface of a substrate with a carrier head. The method includes polishing one or more materials on a surface of the substrate opposite the support surface to form a polished surface, wherein the one or more materials include one or more copper materials. The method includes wherein the polished surface exhibits a dishing depth of less than or about 5 nm, a dielectric rounding of less than 1.8 nm, a dielectric roughness of less than 0.6 nm, or a combination thereof. The method includes wherein the polished surface exhibits a dishing depth of less than or about 3 nm. In some embodiments, the polished surface exhibits dielectric rounding of less than or about 1 nm. In some further embodiments, the method exhibits a barrier protrusion risk of less than or about 50%. Furthermore, in some embodiments, the one or more materials further comprise an oxide, a nitride, a valve metal, or a combination thereof, wherein the removal rate of the one or more copper materials differs from that of the oxide, the valve metal, or a combination thereof by less than or about 20%. In some further embodiments, the method comprises bonding a semiconductor component to the polished surface, wherein the component and substrate exhibit a leakage current of less than or about 5 picoamperes. Chemical mechanical polishing (CMP) typically involves a multi-component system, including a polishing assembly and a carrier head. A semiconductor substrate can be clamped into the carrier head, inverted, and pressed against a polishing pad on the polishing assembly. When removing non-uniform features or multiple films characterized by varying physical properties, some systems may be able to modulate the pressure at which different areas of the substrate contact the polishing pad. For example, the carrier head may include chambers where pressure can be adjusted to increase or decrease the pressure applied to the substrate in those areas. Similarly, a retaining ring extending beyond the substrate can be pressed with increased or decreased pressure to affect the overall effect on the substrate. Polishing pads are typically made from a composition or formulation that includes viscoelastic polymer materials. The mechanical properties of the polishing pad (e.g., elasticity, rebound, hardness, and stiffness), influenced by the polymer formulation and CMP processing conditions, significantly impact CMP polishing performance at both the integrated circuit (IC) grain level (micro / nanoscale) and the wafer or bulk level (macroscale). For example, CMP process forces and conditions, such as pad compression, pad rebound, friction, and temperature variations during processing, as well as the abrasive aqueous slurry chemistry, influence polishing pad properties and, therefore, CMP performance. Conventional polishing pads are typically formed by molding, casting, or sintering a polymer material, typically a polyurethane material. In the case of molding, one example of which is injection molding, the polishing pad is produced one at a time. In the case of casting, a liquid precursor is cast and solidified into a cake, which is then cut into individual pads. These pads are then machined to their final thickness. Pad surface features, including grooves to facilitate slurry transport, can be machined into the polishing surface or formed as part of the injection molding process. However, conventional methods of manufacturing polishing pads are expensive and time-consuming, and often produce uneven polishing results due to difficulties in producing and controlling the feature sizes on the pad surface. As IC die and feature sizes continue to shrink, and as article surfaces become more complex in bonding schemes, non-uniformity becomes increasingly significant. For example, during CMP, different areas on a substrate may polish at different rates, resulting in excessive material removal in some areas ("over-polishing") or insufficient material removal in other areas ("under-polishing"). While any under- or over-polishing can be problematic, hybrid bonded articles are expected to tolerate variations in polishing of very small recesses, dielectric fillets, or adjacent materials (e.g., such as barrier protrusions) because processing and temperature limitations complicate the bonding process. Attempts have been made to vary the polishing pressure (e.g., the polishing pressure of the polishing head on the substrate), polishing time, and / or slurry composition. However, such variations result in limited resources for improving the article surface. Furthermore, current pad materials and their manufacturing methods limit the manipulation and fine control of bulk pad properties, such as elongation, ultimate tensile strength, toughness, and modulus of the cured or hardened polymer material, each of which plays a role in pad performance. That is, conventional pad production via traditional bulk polymerization and casting and molding techniques provides only limited control over pad process margin properties because the pad is a random mixture of phase-separated macromolecular domains that experience intramolecular repulsion and attraction forces and variable polymer chain entanglement. For example, the presence of phase-separated micro- and macro-domains in the bulk pad can produce a stacked combination of nonlinear material responses, such as hysteresis in storage modulus over multiple heating and cooling cycles, which typically occurs during CMP processing of a substrate batch, which can lead to polishing non-uniformity and unpredictable performance across the entire substrate batch. To overcome these shortcomings, alternative manufacturing methods and processes for forming CMP pads have been explored. For example, attempts have been made to utilize additive manufacturing to provide highly uniform CMP pads with improved and variable process margin properties. However, existing additively manufactured CMP pads do not provide the combination of properties required to produce an article surface suitable for hybrid bonding. Furthermore, existing additively manufactured CMP pads do not provide variations in hardness throughout the pad body, as well as variations in porosity, groove shape, and the like. The present technology overcomes these and other problems by providing CMP pads customized for hybrid bonding applications. Specifically, the present technology has surprisingly discovered that by utilizing UV-curable formulations containing carefully selected segments, CMP pads can be built up to have a unique combination of base hardness, polishing layer hardness, and one or more targeted polishing layer properties. In this way, the present technology can provide methods for polishing articles for hybrid bonding that produce polished surfaces having less than about 5 nm dishing, less than about 0.5 nm dielectric roughness, less than about 1.5 nm dielectric rounding, less than about 50% barrier protrusion risk, or combinations thereof. While the remainder of this disclosure will generally identify specific polishing pads and methods of forming such pads using the disclosed technology, it will be readily understood that the systems and methods are equally applicable to a variety of other chemical mechanical polishing processes and systems and methods of forming such articles. Therefore, this technology should not be considered limited to use with only the described polishing systems or processes. Before describing the systems and methods or operations of exemplary processing sequences according to some embodiments of the present technology, this disclosure will discuss one possible system that can be used with the present technology. It should be understood that this technology is not limited to the described apparatus and that the processes discussed can be performed in any number of processing chambers and systems, as well as in any number of modifications, some of which are described below. FIG1 shows a schematic cross-sectional view of an exemplary polishing system 100 according to some embodiments of the present technology. The polishing system 100 includes a platen assembly 102 comprising a lower platen 104 and an upper platen 106. The lower platen 104 can define an interior volume or cavity through which connections can be made and which can include an endpoint detection device or other sensor or device, such as an eddy current sensor, an optical sensor, or other component for monitoring the polishing operation or part. For example, and as further described below, a fluid coupling can be formed with a line extending through the lower platen 104 and accessible to the upper platen 106 via the back side of the upper platen. The platen assembly 102 can include a polishing pad 110 mounted on a first surface of the upper platen. A substrate carrier 108 or carrier head can be disposed above and facing the polishing pad 110. The platen assembly 102 can rotate about an axis A, and the substrate carrier 108 can rotate about an axis B. The substrate carrier can also be configured to sweep back and forth along the platen assembly from the inner radius to the outer radius, which can partially reduce uneven wear on the surface of the polishing pad 110. The polishing system 100 can also include a fluid delivery arm 118 positioned above the polishing pad 110, and the fluid delivery arm can be used to deliver a polishing fluid, such as a polishing slurry, to the polishing pad 110. In addition, a pad conditioning assembly 120 can be disposed above the polishing pad 110 and can face the polishing pad 110. In some embodiments performing a chemical mechanical polishing process, rotating and / or sweeping the substrate carrier 108 may apply downward force to a substrate 112, which is shown in phantom and may be disposed within or coupled to the substrate carrier. As the polishing pad 110 rotates about the central axis of the platen assembly, the applied downward force may press the material surface of the substrate 112 against the polishing pad 110. The interaction of the substrate 112 against the polishing pad 110 may occur in the presence of one or more polishing fluids delivered by a fluid delivery arm 118. A typical polishing fluid may include a slurry formed from an aqueous solution in which abrasive particles may be suspended. Typically, the polishing fluid contains a pH adjuster and other chemically active components, such as an oxidizing agent, that facilitate chemical mechanical polishing of the material surface of the substrate 112. The pad conditioning assembly 120 can be operated to apply a fixed abrasive conditioning disk 122 to the surface of the polishing pad 110, which can be rotated as previously described. The conditioning disk can be operated against the pad before, after, or during polishing of the substrate 112. Conditioning the polishing pad 110 with the conditioning disk 122 can maintain the polishing pad 110 in a desired condition by grinding, regenerating, and removing polishing byproducts and other debris from the polishing surface of the polishing pad 110. The upper platform 106 can be disposed on a mounting surface of the lower platform 104 and can be coupled to the lower platform 104 using a plurality of fasteners 138, such as an annular flange-shaped portion extending through the lower platform 104. The polishing platen assembly 102, and thus the upper platen 106, can be sized to suit any desired polishing system and can be sized to suit substrates of any diameter, including 200 mm, 300 mm, 450 mm, or larger. For example, a polishing platen assembly configured to polish a 300 mm diameter substrate can be characterized by a diameter greater than about 300 mm, such as between about 500 mm and about 1000 mm, or greater than about 500 mm. The diameter of the platen can be adjusted to accommodate substrates characterized by larger or smaller diameters, or for a polishing platen 106 sized to polish multiple substrates simultaneously. The upper platen 106 can be characterized by a thickness between about 20 mm and about 150 mm, and can be characterized by a thickness less than or about 100 mm, such as less than or about 80 mm, less than or about 60 mm, less than or about 40 mm, or less. In some embodiments, the polishing platform 106 can have a diameter to thickness ratio of greater than or about 3:1, greater than or about 5:1, greater than or about 10:1, greater than or about 15:1, greater than or about 20:1, greater than or about 25:1, greater than or about 30:1, greater than or about 40:1, greater than or about 50:1, or greater. The upper platen and / or the lower platen can be formed of a suitably rigid, lightweight, and polishing fluid-resistant material, such as aluminum, an aluminum alloy, or stainless steel, but any number of materials may be used. The polishing pad 110 can be formed of any number of materials, including polymeric materials such as polyurethanes, polyesters, polycarbonates, fluoropolymers, polytetrafluoroethylene polyphenylene sulfide, or combinations of any of these or other materials. Additional materials may be or include open-cell or closed-cell foamed polymers, elastomers, felts, impregnated felts, plastics, or any other material that is compatible with the process chemistry. It should be understood that the polishing system 100 is included to provide appropriate reference to the components discussed below that may be incorporated into the system 100, but the description of the polishing system 100 is not intended to limit the present technology in any way, as embodiments of the present technology may be incorporated into any number of polishing systems that may benefit from the components and / or capabilities further described below. In embodiments, the formulations discussed herein can be used in an additive manufacturing process, such as a three-dimensional printing (or 3-D printing) process, to form polished articles according to the present technology. In embodiments, a model of the article, such as a computer-aided design (CAD) model as an example, is generated, after which a slicing algorithm maps the information for each layer. In one non-limiting example of a 3-D printing process, a 3-D printing process is one in which droplets of a liquid polymer formulation (such as the formulations discussed below) are dispensed onto a surface and then solidified to form the polished article in a layer-by-layer manner, as discussed further below. Because 3-D printing processes allow for localized control over material composition, microstructure, and surface texture, a wide variety of (and previously inaccessible) geometries can be achieved using this approach. In one embodiment, a polished article formed according to the present technology may be represented by a data structure readable by a computer presentation device or a computer display device. A computer-readable medium may contain a data structure representing the polished article. The data structure may be a computer file and may contain information about the structure, material, texture, physical properties, or other characteristics of one or more articles. The data structure may also contain code, such as computer executable code or device control code for using selected functions of the computer presentation device or computer display device. The data structure may be stored on a computer-readable medium. The computer-readable medium may include a physical storage medium, such as a magnetic memory, a floppy disk, or any convenient physical storage medium. The physical storage medium may be read by a computer system to present the article represented by the data structure on a computer screen or a physical presentation device, which may be an additive manufacturing device, such as a 3D printer. The embodiments described herein provide unique compositions formed from curable precursor formulations that are well-suited for forming advanced chemical mechanical planarization (CMP) pads, such as polishing articles that can be used in semiconductor manufacturing. The formulations and compositions disclosed herein can be cross-linked by ultraviolet (UV) light to form a network structure, or can be cross-linked by other curing methods known in the art, and therefore can be referred to as curable precursor formulations. In addition, the formulations described herein can include ethylenically unsaturated monomers, oligomers and / or polymers. The formulations described herein can be used in additive manufacturing (3D printing) processes to manufacture polishing articles, for example by jetting ink through a print head, as well as other additive manufacturing processes discussed in more detail below. The formulations for polishing pads described herein surprisingly provide polishing articles that are capable of providing a highly uniform surface on the polishing article. In one embodiment, the resin precursor composition may include at least one curable precursor formulation. The resin precursor may be well-suited for additive manufacturing and, therefore, may be referred to as a printable resin precursor. The resin precursor composition may include at least one of the following: one or more oligomeric components, one or more monomeric components, one or more crosslinking agents, one or more photoinitiator components, one or more emulsifiers / surfactants, one or more inorganic particles, organic particles, or both, one or more porosity-forming agents, and one or more additional additives. The formulations described herein may include meth(acrylate) oligomers. In embodiments, the meth(acrylate) oligomers may include polyester groups, polyether groups, urethane groups, epoxy groups, thiol groups, and combinations thereof, which may contribute to high elongation and high modulus. The formulations described herein may further include reactive diluents, photoinitiators, photosensitizers, oxygen scavengers, surface tension modifiers, and additives to improve performance. Regardless of the curable acrylate(s) utilized, the viscosity of the formulations described herein at printing temperature may be in the range of about 5 cP to about 100 cP, for example, in the range of about 5 cP to about 50 cP, such as in the range of about 10 cP to about 30 cP at printing temperature (e.g., about 60°C). Nevertheless, in embodiments, the resin precursor composition includes one or more oligomeric components. In embodiments, the oligomeric component may be a monofunctional or multifunctional urethane acrylate oligomer including a curable organic material. For example, in embodiments, the semi-crystalline radiation-curable oligomeric material may be an aliphatic polyester urethane acrylate or (meth)acrylate, an aliphatic polycarbonate urethane acrylate or (meth)acrylate, an aliphatic polyether urethane acrylate or (meth)acrylate, an aliphatic polybutadiene urethane acrylate or (meth)acrylate, or a combination thereof. For example, in an embodiment, the oligomeric component may include one or more of the following: polyamide, polycarbonate, polyester, polyetherketone, polyether, polyoxymethylene, polyethersulfone, polyetherimide, polyamide, polyolefin, polysiloxane, polysulfone, polyphenylene, polyphenylene sulfide, polyurethane, polystyrene, polyacrylonitrile, polyacrylate, polymethyl methacrylate, polyurethane acrylate, polyester acrylate, polyether acrylate, epoxy acrylate, polycarbonate, polyester, melamine, polysulfone, polyethylene material, acrylonitrile butadiene styrene (ABS), halogenated polymers, block copolymers, and copolymers thereof. The curable oligomeric material can be monofunctional or multifunctional (e.g., difunctional, trifunctional, or greater). For example, in an embodiment, the curable oligomeric material can exhibit a functionality greater than 1, such as greater than or about 1.1, such as greater than or about 1.2, such as greater than or about 1.3, such as greater than or about 1.4, such as greater than or about 1.5, such as greater than or about 1.6, such as greater than or about 1.7, such as greater than or about 1.8, such as greater than or about 1.9, such as greater than or about 2, such as greater than or about 3, such as greater than or about 4, such as greater than or about 5, such as greater than or about 10, or such as less than or about 10, such as less than or about 8, such as less than or about 6, such as less than or about 5, such as less than or about 4, such as less than or about 2, such as less than or about 2, or any range or value therebetween. In embodiments, the curable oligomeric material may contain more than two acrylates. Thus, one or more oligomeric components may include at least one of the following: an acrylic oligomer, a urethane (meth)acrylate oligomer, a polyester (meth)acrylate oligomer, a polyether (meth)acrylate oligomer, a polysiloxymethyl (acrylate), a vinyl (meth)acrylate, an epoxy (meth)acrylate oligomer, or any other oligomeric component described herein. In embodiments, at least one aliphatic urethane acrylate oligomer is an aliphatic urethane diacrylate oligomer, an aliphatic polyester urethane diacrylate oligomer, an aliphatic polyether urethane diacrylate oligomer, or a combination thereof. In embodiments, the oligomeric component may contain one or more urea groups attached to a terminal functional acrylate moiety. Furthermore, in embodiments, the oligomeric component may contain crystalline or liquid crystal groups to improve order during crosslinking, which may help provide higher elongation and modulus. The oligomer component may have other hydrogen bonding groups, such as urea and carboxylic acid, to improve the intermolecular and intramolecular interactions and modulus of the crosslinked pad material. In one embodiment, the urethane acrylate group may contain one or more long-chain alkyl groups that form a controlled network structure to improve the elongation and modulus of the crosslinked film. Examples of suitable aliphatic urethane acrylate oligomers include, but are not limited to, those designated BOMAR® BR-744SD aliphatic polyester urethane diacrylate oligomer, BOMAR® BR-743S aliphatic polyester urethane diacrylate oligomer, BOMAR® BR-743SD aliphatic polyester urethane diacrylate oligomer, Sartomer® aliphatic urethane diacrylates designated CN959, CN962, CN965, CN986, CN996, CN9024, CN991, and Allnex® aliphatic urethane diacrylates designated Ebecryl 250 (Eb250), Ebecryl 270 (Eb270), and combinations thereof. One or more oligomeric components can be included in the printable resin precursor composition at relatively high loading levels. For example, in an embodiment, each urethane acrylate oligomer or an oligomeric component containing one or more urethane acrylate oligomers can be present in the curable precursor formulation or the printable resin precursor composition in an amount greater than or about 5 wt %, such as greater than or about 10 wt %, such as greater than or about 15 wt %, such as greater than or about 20 wt %, such as greater than or about 25 wt %, such as greater than or about 30 wt %, such as greater than or about 35 wt %, such as greater than or about 40 wt %, such as greater than or about 45 wt %, such as greater than or about 50 wt %, such as greater than or about 55 wt %, or any range or value therebetween, based on the total weight of the curable precursor formulation or the printable resin precursor composition. The amount of the oligomer component in the curable precursor formulation or the printable resin precursor composition may be from about 5 wt % to about 60 wt %, such as from about 10 wt % to about 60 wt %, such as from about 10 wt % to about 50 wt %, such as from about 15 wt % to about 45 wt %, or from about 17.5 wt % to about 40 wt %, or any range or value therebetween or discussed above, based on the total weight of the resin precursor composition. The curable resin precursor formulation also includes one or more reactive monomers that form a reactive monomer component. Careful selection of the reactive monomer(s) can provide good solvency for the oligomer component and the overall curable precursor formulation, allowing for excellent viscosity at room temperature without compromising the beneficial properties of the oligomer component. The reactive monomer component can also have a low glass transition temperature, which contributes to the flexibility of the printable resin precursor composition after curing. In one embodiment, the reactive monomer component can include an acrylate, an acrylamide, a (meth)acrylic acid, a pyrrolidone, a thiol, or a combination thereof. In one embodiment, the monomer composition may include at least a first reactive monomer composition that exhibits a first reactive monomer glass transition temperature and a first reactive monomer viscosity, and a second reactive monomer composition that exhibits a second reactive monomer glass transition temperature and a second reactive monomer viscosity. In one embodiment, the first reactive monomer may have a higher glass transition temperature, a higher viscosity, or both a higher glass transition temperature and a higher viscosity than the second reactive monomer. In one embodiment, the first reactive monomer, the second reactive monomer, or both may be an acrylate monomer. Examples of suitable monofunctional monomers include, but are not limited to, tetrahydrofurfuryl acrylate (e.g., SR285 from Sartomer®), tetrahydrofurfuryl methacrylate, vinyl caprolactam, isobornyl acrylate ("IBOA"), isobornyl methacrylate, 2-phenoxyethyl acrylate, 2-phenoxyethyl methacrylate, 2-(2-ethoxyethoxy)ethyl acrylate, isooctyl acrylate, isodecyl acrylate, isodecyl methacrylate, lauryl acrylate, lauryl methacrylate, stearyl acrylate, stearyl methacrylate, cyclotrimethylolpropane formal acrylate, ethyl 2-[[(butylamino)carbonyl]oxy]acrylate (e.g., Genomer 1122 from RAHN USA Corporation or Photomer® 4184 from IGM Resins), 3,3,5-trimethylcyclohexane acrylate, and monofunctional methoxylated PEG. (350) acrylates, 2-carboxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxyethyl acrylate, cyclotrimethylolpropane formal acrylate, dendritic acrylates, dendritic thioether acrylates, hydroxypivalate neopentyl glycol diacrylate, 4-tert-butylcyclohexyl acrylate, combinations thereof, and other monofunctional monomers. Examples of suitable difunctional or higher functional monomers include, but are not limited to, diacrylates or dimethacrylates of diols and polyether diols, such as propoxylated neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, 1,3-butanediol diacrylate, 1,3-butanediol dimethacrylate, 1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate, dicyclopentanyl acrylate (e.g., FA-513A from Hitachi Chemical), dicyclopentanyl methacrylate (e.g., Chemical), 3,3,5-trimethylcyclohexyl acrylate (e.g., SR420 from Sartomer®), alkoxylated aliphatic diacrylates (e.g., SR9209A from Sartomer®), diethylene glycol diacrylate, diethylene glycol dimethacrylate, dipropylene glycol diacrylate (e.g., SR508 from Sartomer®), tetrahydrofurfuryl acrylate (e.g., SR285 from Sartomer®), 1,4-butanediylbis[oxy(2-hydroxy-3,1-propanediyl)] diacrylate, polyether-modified polydimethylsiloxanes, tripropylene glycol diacrylate, triethylene glycol dimethacrylate, and alkoxylated hexanediol diacrylates (e.g., SR562, SR563, SR564, combinations thereof from Sartomer®), trimethylolpropane triacrylate, and other difunctional monomers. In an embodiment, suitable acrylate monomers may include isobornyl acrylate, 3,3,5-trimethylcyclohexyl acrylate, (ethyl 2-[[(butylamino)carbonyl]oxy]acrylate), or a combination thereof. The reactive monomer component may also include one or more pyrrolidones (one example of which is N-vinyl-2-pyrrolidone), one or more acrylamides (including N,N-diethylacrylamide and N-(2-hydroxyethyl)acrylamide), acrylic acid or methacrylic acid, thiols (including pentaerythritol tetrakis(3-mercaptopropionate) and ethylene glycol bis(3-mercaptopropionate)), and combinations thereof, alone or in combination with one or more of the above acrylates. The reactive monomer component can be a multifunctional component. The functionality of the monomer component can be three or less. The functionality of the monomer component can be two or less. In an embodiment, the monomer component includes both monofunctional and difunctional monomers. However, in an embodiment, the monomer component can contain one or more monomers with the following functionality: greater than 1, such as greater than or about 1.1, such as greater than or about 1.2, such as greater than or about 1.3, such as greater than or about 1.4, such as greater than or about 1.5, such as greater than or about 1.6, such as greater than or about 1.7, such as greater than or about 1.8, such as greater than or about 1.9, such as greater than or about 2, such as greater than or about 3, such as greater than or about 4, such as greater than or about 5, such as greater than or about 10, or such as less than or about 20, such as less than or about 10, such as less than or about 8, such as less than or about 6, such as less than or about 5, such as less than or about 4, such as less than or about 2, such as less than or about 2, or any range or value therebetween. In addition, in an embodiment, a monomer or a monomer component containing one or more monomers may be present in the curable precursor formulation or the printable resin precursor composition in the following amount based on the total weight of the curable precursor formulation or the printable resin precursor composition: greater than or about 5 weight%, such as greater than or about 10 weight%, such as greater than or about 15 weight%, such as greater than or about 20 weight%, such as greater than or about 25 weight%, such as greater than or about 30 weight%, such as greater than or about 35 weight%, such as greater than or about 40 weight%, such as greater than or about 45 weight%, such as greater than or about 50 weight%, such as greater than or about 55 weight%, such as greater than or about 60 weight%, such as greater than or about 65 weight%, such as greater than or about 70 weight%, such as greater than or about 75 weight%, such as greater than or about 80 weight%, such as greater than or about 85 weight%, such as greater than or about 90 weight%. The amount of the oligomer component in the resin precursor composition may be from about 20 wt % to about 90 wt %, such as from about 25 wt % to about 85 wt %, such as from about 30 wt % to about 80 wt %, such as from about 35 wt % to about 75 wt %, or from about 40 wt % to about 70 wt %, or any range or value therebetween or discussed above, based on the total weight of the resin precursor composition. The printable resin precursor composition may also include one or more photoinitiator components. In some embodiments, the curing process may include a process in which the photoinitiator component initiates curing in response to introduced energy, such as incident radiation. The type of photoinitiator component selected in the resin precursor composition generally depends on the wavelength or type of energy introduced during curing to cure the resin precursor composition. Generally, the peak absorption wavelength of the selected photoinitiator varies with the wavelength range of the curing radiation to efficiently utilize the radiation energy, particularly when ultraviolet light is used as the radiation. Two types of free radical photoinitiators can be used in one or more embodiments of the compositions herein. The first type of photoinitiator (also referred to herein as a bulk-curing photoinitiator) is an initiator that cleaves upon exposure to UV radiation, immediately generating free radicals that can initiate polymerization. Bulk-curing photoinitiators can be used for both surface curing and bulk or overall curing of dispensed droplets. Exemplary bulk-curing photoinitiators can include, but are not limited to, benzoin ethers, benzyl ketals, acetyl phenones, alkyl phenones, and phosphine oxides. The second type of photoinitiator (also referred to herein as a surface-curing photoinitiator) is activated by UV radiation and forms free radicals by abstracting hydrogen from a second compound, which become the actual initiating free radicals. Surface-curing photoinitiators are often referred to as co-initiators or polymerization boosters and can be amine boosters. Amine boosters are used to reduce oxygen inhibition, and thus, surface-curing photoinitiators can be used for rapid surface curing. Exemplary surface-curing photoinitiators may include, but are not limited to, benzophenone compounds and thioxanthone compounds. Amine boosters may be amines with active hydrogens, and in some embodiments, amine boosters (such as amine-containing acrylates) may be combined with benzophenone photoinitiators in the curable precursor formulation. That is, in some embodiments, such blends can limit oxygen inhibition, facilitate rapid curing of the droplet or layer surface to stabilize the droplet or layer surface size, increase layer stability during the curing process, or a combination thereof. However, it should be understood that in some embodiments, only one photoinitiator may be required. Non-limiting examples of suitable photoinitiators include, but are not limited to, 1-hydroxycyclohexyl phenyl ketone, 4-isopropylphenyl-2-hydroxy-2-methylpropan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2,2-dimethyl-2-hydroxy-acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methylpropiophenone, diphenyl(2,4,6-trimethylbenzyl)phosphine oxide, bis(2,6-dimethoxy-benzyl)-2,4, 6-Trimethylphenylphosphine oxide, 2-methyl-1-1[4-(methylthio)phenyl]-2-N-morpholinopropan-1-one, 3,6-bis(2-methyl-2-N-morpholinopropionyl)-9-n-octylcarbazole, 2-benzyl-2-(dimethylamino)-1-((4-N-morpholino)phenyl)-1-butanone, benzophenone, 2,4,6-trimethylbenzophenone, isopropylthioxanthone, phenylbis(2,4,6-trimethylbenzyl)phosphine oxide, 2-hydroxy-2-methyl-1-phenyl-1-propanone. Commercially available suitable photoinitiator blends include, but are not limited to, those designated Darocur 4265, Irgacure 819, Irgacure 1173, Irgacure 2022, Irgacure 2100 from Ciba® Specialty Chemicals; and Esacure KT37, Esacure KT55, Esacure KT0046 from Lamberti®. Photoinitiators can be from BASF, such as Irgacure series 184, 2022, 2100, 250, 270, 295, 369, 379, 500, 651, TPO, TPO-L, 754, 784, 819, 907, 1173, or 4265. Amine synergists can be secondary or tertiary amine-based compounds with or without acrylic groups. Examples of these materials include diethanolamine, triethanolamine, or acrylated co-oligoamines (e.g., Genomer 5142). In one embodiment, the photoinitiator is a free radical photoinitiator. In one embodiment, the photoinitiator is selected from phenylbis(2,4,6-trimethylbenzyl)phosphine oxide, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 2,4,6-trimethylbenzyldiphenylphosphine oxide, or a combination thereof. In one embodiment, the photoinitiator is selected from the group comprising, consisting of, or consisting essentially of benzoin ethers, benzyl ketals, acetyl phenones, alkyl phenones, phosphine oxides, benzophenone compounds, and thioxanthone compounds. In embodiments, to delay or prevent free radical quenching caused by diatomic oxygen, which slows or inhibits the free radical curing mechanism, it may be beneficial to select an oxygen-limited or oxygen-free curing atmosphere or environment. An oxygen-limited or oxygen-free environment includes an inert gas atmosphere and dry, degassed, and largely oxygen-free chemical reagents, such as having 20% ​​or less oxygen by volume of the atmosphere, such as less than or about 15% by volume, such as less than or about 10% by volume, such as less than or about 7.5% by volume, such as less than or about 5% by volume, such as less than or about 2.5% by volume, such as less than or about 1% by volume, or any range or value therebetween. Furthermore, in embodiments, the atmosphere may be oxygen-free. In an embodiment, the photoinitiator component or individual photoinitiators may be present in the curable precursor formulation or the printable resin precursor composition in an amount greater than or about 0.1 wt %, such as greater than or about 0.5 wt %, such as greater than or about 1 wt %, such as greater than or about 2 wt %, such as greater than or about 5 wt %, such as greater than or about 10 wt %, such as greater than or about 15 wt %, such as greater than or about 17 wt %, based on the total weight of the curable precursor formulation or the printable resin precursor composition. The amount of the photoinitiator component in the curable precursor formulation or the printable resin precursor composition may be from about 0.1 wt % to about 20 wt %, such as from about 0.5 wt % to about 5 wt %, or such as from about 0.5 wt % to about 2.5 wt %, or such as from about 5 wt % to about 10 wt %, or such as from about 10 wt % to about 15 wt %, or such as from about 15 wt % to about 20 wt %, or any range or value therebetween, relative to the total weight of the curable precursor formulation or the printable resin precursor composition. The resin precursor composition may also include one or more emulsifiers, surfactants, or both. The one or more emulsifiers may include anionic surfactants, cationic surfactants, nonionic surfactants, amphoteric surfactants, or combinations thereof. As used herein, "emulsifier" may refer to any compound or substance capable of forming an emulsion. Exemplary emulsifiers may include any surfactant compound or polymer capable of stabilizing an emulsion, provided that the emulsifier contains at least one anionic, cationic, amphoteric, or nonionic surfactant and is used in a sufficient amount to provide the resin precursor composition with a liquid emulsion of the porosity-forming agent polymer. Generally, such surfactant compounds or polymers stabilize the emulsion by preventing the dispersed amount of porosity-forming agent from coalescing within the emulsion. The surfactant compound used as an emulsifier in the resin precursor composition of the present invention is an anionic, cationic, amphoteric, or nonionic surfactant, or a combination of surfactants. Different types of surfactants and / or mixtures of different surfactants of the same type may be used. In an embodiment, the emulsifier, surfactant, or combination thereof may be incorporated into the curable precursor formulation or printable resin precursor composition in an amount of greater than or about 0.1 wt %, such as greater than or about 1 wt %, such as greater than or about 2 wt %, such as greater than or about 5 wt %, such as greater than or about 10 wt %, such as greater than or about 15 wt %, such as greater than or about 17 wt %, or any range or value therebetween, based on the total weight of the curable precursor formulation or printable resin precursor composition. The amount of the emulsifier component in the curable precursor formulation or printable resin precursor composition may be from about 0.1 wt % to about 20 wt %, such as from about 1 wt % to about 5 wt %, such as from about 5 wt % to about 10 wt %, such as from about 10 wt % to about 15 wt %, such as from about 15 wt % to about 20 wt %, or any range or value therebetween, relative to the total weight of the curable precursor formulation or printable resin precursor composition. The printable resin precursor composition may include inorganic particles, organic particles, or both. Because the additive manufacturing printing process involves the sequential layer-by-layer deposition of at least one composition per layer, it may also be suitable for depositing additional inorganic or organic particles disposed on or within the pad layer to achieve specific pad properties and / or perform specific functions. The inorganic or organic particles may have a size ranging from 5 nanometers (nm) to 100 micrometers (µm), such as less than or about 90 µm, such as less than or about 80 µm, such as less than or about 70 µm, such as less than or about 60 µm, such as less than or about 50 µm, such as less than or about 40 µm, such as less than or about 30 µm, such as less than or about 20 µm, such as less than or about 10 µm, such as less than or about 5 µm, or any range or value therebetween, and may be added to the precursor material prior to dispensing by the printer 306, as discussed in more detail below, or added to the uncured print layer at a ratio between 1 and 50 weight percent (wt%). Inorganic or organic particles may be added during the advanced polishing pad formation process to improve ultimate tensile strength, improve yield strength, improve storage modulus stability over temperature, improve heat transfer, adjust surface zeta potential, and adjust surface energy. The particle type, chemical composition, or size, and the particles added can vary depending on the application or the target effect to be achieved. The size of the inorganic or organic particles can range from 25 nanometers (nm) to 100 microns (µm) and can be added to the precursor material before being dispensed by the droplet jet printer, or added to the uncured printable resin precursor or curable precursor formulation at a ratio of 1 weight percent to about 50 weight percent (wt%). In some embodiments, the particles can include intermetallic compounds, ceramics, metals, polymers and / or metal oxides such as cerium oxide, aluminum oxide, silicon dioxide, zirconium oxide, zinc oxide, zinc sulfide, nitrides, carbides, or combinations thereof. In one example, the inorganic or organic particles disposed on or within the pad can include particles of high-performance polymers such as PEEK, PEK, PPS, and other similar materials to improve the thermal conductivity and / or other mechanical properties of the advanced polishing pad. The particle component in the resin precursor composition can be incorporated into the curable precursor formulation or the printable resin precursor composition in an amount greater than or about 0.1 wt %, such as greater than or about 1 wt %, such as greater than or about 2 wt %, such as greater than or about 5 wt %, such as greater than or about 10 wt %, such as greater than or about 15 wt %, such as greater than or about 17 wt %, or any range or value therebetween, based on the total weight of the curable precursor formulation or the printable resin precursor composition. The amount of the particle component in the curable precursor formulation or the printable resin precursor composition can be from about 0.1 wt % to about 20 wt %, or such as from about 1 wt % to about 5 wt %, such as from about 5 wt % to about 10 wt %, such as from about 10 wt % to about 15 wt %, or such as from about 15 wt % to about 20 wt %, or any range or value therebetween, relative to the total weight of the curable precursor formulation or the printable resin precursor composition. The curable precursor formulation or the printable resin precursor composition may also include one or more pore formers. In one embodiment, the pore former may include a glycol, a glycol ether, an amine, or a combination thereof. In one embodiment, the porosity former may include ethylene glycol, butanediol, propylene glycol-(1,2) and propylene glycol-(1,3), octane-1,8-diol, neopentyl glycol, cyclohexanedimethanol (1,4-bis-hydroxymethylcyclohexane), 2-methyl-1,3-propanediol, glycerol, trimethylolpropane, hexanediol-(1,6), hexanetriol-(1,2,6), butanetriol-(1,2,4), trimethylolethane, pentaerythritol, quinuclol, mannitol and sorbitol, methyl glycoside, diethylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, dibutylene glycol, polybutylene glycol, ethylene glycol, ethylene glycol monobutyl ether (EGMBE), diethylene glycol monoethyl ether, ethanolamine, diethanolamine (DEA), triethanolamine (TEA), or a combination thereof. The amount of the pore former in the curable precursor formulation or the printable resin precursor composition is from about 0.1 wt % to about 20 wt %, such as from about 1 wt % to about 5 wt %, such as from about 5 wt % to about 10 wt %, such as from about 10 wt % to about 15 wt %, or such as from about 15 wt % to about 20 wt %, or any range or value therebetween, relative to the total weight of the curable precursor formulation or the printable resin precursor composition. Surprisingly, unlike existing formulations, the pore formers discussed herein can contain customized pore sizes after printing (e.g., by dissolving one or more pore-forming components), unlike existing hollow pores. In some embodiments, the curable precursor formulation or printable resin precursor may include an additional crosslinking component. Suitable crosslinking agents may include one or more multifunctional acrylates. In some embodiments, the crosslinking agent may include trimethylolpropane triacrylate, 1,6-hexanediol diacrylate, bisphenol A glycerate diacrylate, tricyclodecane dimethanol diacrylate, dendritic acrylates, dendritic thioether acrylates, hydroxyneopentyl glycol diacrylate, 4-tert-butylcyclohexyl acrylate, combinations thereof, or other crosslinking agents known in the art. An example of a triacrylate is trimethylolpropane triacrylate. The crosslinking agent may be present in the curable precursor formulation or the printable resin precursor composition in an amount greater than or about 0.1 wt %, such as greater than or about 1 wt %, such as greater than or about 2 wt %, such as greater than or about 5 wt %, such as greater than or about 10 wt %, such as greater than or about 15 wt %, or such as in an amount from about 0.1 wt % to about 20 wt %, such as from about 1 wt % to about 5 wt %, such as from about 5 wt % to about 10 wt %, such as from about 10 wt % to about 15 wt %, or such as from about 15 wt % to about 20 wt %, or any range or value therebetween, relative to the total weight of the curable precursor formulation or the printable resin precursor composition. The curable precursor formulation or printable resin precursor composition may further include one or more additional additives, including but not limited to stabilizers, surfactants, leveling additives, pH adjusters, chelating agents, oxygen scavengers, polymer spheres, and colorants. Nevertheless, regardless of the printable resin precursor composition or curable precursor formulation utilized, exemplary polishing pads that can be formed from one or more embodiments of the formulations and / or compositions discussed herein are illustrated in Figures 2A through 2K. The polishing pads illustrated in Figures 2A through 2K can be used, for example, in the polishing system 100 depicted in Figure 1. Unless otherwise specified, the terms first polishing element(s) 204 and second polishing element(s) 206 broadly describe portions, regions, and / or features within the polishing body of the polishing article 200. In embodiments, the polishing article 200 may contain pores or materials that, upon exposure to a slurry, such as during a polishing operation, form voids in the surface of the pad. Examples of polishing pads, such as the embodiments illustrated in Figures 2A through 2K, are not intended to limit the scope of the disclosure provided herein. Rather, it should be understood that other polishing pad orientations can be provided by one or more formulations discussed herein and / or via one or more of the build-up manufacturing processes described herein. In one embodiment, the polishing pad may be formed by the automated sequential deposition of at least one resin precursor composition layer by layer, followed by at least one curing process. In such embodiments, each layer may represent at least one polymer composition and / or regions of different compositions. The curable precursor formulation(s) may include any one or more of the components described above. To form the one or more cured polymer layers, a curing process or sequential curing process may be used, such as exposing the one or more compositions to UV radiation and / or thermal energy. In this manner, the entire polishing pad may be formed from one or more polymer layers via a build-up manufacturing process, as discussed in greater detail in Figures 3A to 3C. In one embodiment, the thickness of each or all cured layers may be from about 0.1 micrometers to about 1 mm, such as from about 5 micrometers to about 100 micrometers, or, in one embodiment, from about 25 micrometers to about 30 micrometers. In embodiments, polishing pads according to the present disclosure may have varying material properties, such as porosity as just one example, throughout the pad body 202. In embodiments, one or more material properties may vary across the surface or depth of the polishing pad, such as at least one compositional gradient that moves from one polishing element 204 to another polishing element 206. In embodiments, material properties (such as porosity) throughout the polishing article 200 may be symmetrical or asymmetrical, uniform or non-uniform, as desired to achieve target polishing pad properties, which may include static mechanical properties, dynamic mechanical properties, and wear properties. In embodiments, pores may be formed near the interface of adjacent deposited layers, as discussed in greater detail below. The pattern of either polishing element 204, 206 on the pad body 202 may be radial, concentric, rectangular, spiral, fractal, or random to achieve target properties, including porosity, throughout the polishing pad. Advantageously, the 3D printing process enables the specific placement of material compositions having targeted properties in specific areas of the pad or over a larger area of ​​the pad, thereby combining these properties and representing a larger average or "composite" of properties. However, it should be understood that in embodiments, the precursor formulation(s) may be deposited in a substantially uniform configuration across a layer or through the depth of the polishing article. Nevertheless, in embodiments, the second polishing elements 206 can form all or part of the base layer. In such embodiments, the base layer can have a Shore D hardness of about 20 to about 60, such as greater than or about 25, such as greater than or about 30, such as greater than or about 35, such as greater than or about 40, such as greater than or about 45, such as greater than or about 50, such as greater than or about 55, or any range or value therebetween. Furthermore, one or more first polishing elements 204 can form all or a portion of a polishing layer, the upper surface 208 of which can form a polishing surface. The second polishing elements can be formed of the same material(s) or different material(s), as discussed in greater detail below, but can each or on average have a Shore D hardness greater than 60, such as greater than or about 65, such as greater than or about 70, such as greater than or about 75, such as greater than or about 80, such as greater than or about 85, such as greater than or about 90, or any range or value therebetween. Without wishing to be bound by theory, it is believed that the difference in hardness between the base layer and the polishing layer significantly improves the polishing of substrate surfaces (e.g., surfaces used for hybrid bonding). However, in embodiments, the second plurality of one or more second polishing elements 204 may have a Shore D hardness of about 20 to about 60, such as greater than or about 25, such as greater than or about 30, such as greater than or about 35, such as greater than or about 40, such as greater than or about 45, such as greater than or about 50, such as greater than or about 55, or any range or value therebetween. For example, as discussed in greater detail below, by utilizing additive manufacturing, materials having customized hardnesses as discussed herein can be dispersed over the surface of a polishing article to impart specific polishing properties. Thus, in embodiments, alternating rings, spirals, pluralities, or the like of "hard" features having a Shore D hardness greater than or about 60, "soft" features having a Shore D hardness less than 60, and "pore-forming" features may be randomly or alternatingly dispersed over the surface of the polishing article. Furthermore, in embodiments, the arrangement of the features may be varied based on polishing feedback, the polishing slurry material, the substrate material, or the like. Surprisingly, unlike existing polishing articles, polishing articles according to the present disclosure can exhibit a hardness differential between the base layer and one or more polishing elements of the polishing layer. Thus, in embodiments, one or more elements of the polishing layer can have a hardness greater than the base layer by about 5% or more, such as about 10% or more, such as about 15% or more, such as about 20% or more, such as about 25% or more, such as about 30% or more, such as about 35% or more, such as about 40% or more, such as about 45% or more, such as about 50% or more, such as about 55% or more, such as about 60% or more, such as about 65% or more, such as about 70% or more, or any range or value therebetween. Regardless of the materials and hardness selected for the base layer and polishing layer(s), the overall pad hardness, as measured by Shore D hardness, may be greater than or about 40, such as greater than or about 45, such as greater than or about 50, such as greater than or about 55, such as greater than or about 60, or any range or value therebetween. Additionally or alternatively, in embodiments, one or more of the first polishing elements, one or more of the second polishing elements, or a combination thereof can exhibit porosity, such as achieved by utilizing one or more pore formers discussed above. Thus, in embodiments, the polishing article, all or a portion of the first polishing elements, all or a portion of the second polishing elements, or a combination thereof can exhibit a void percentage (calculated as the volume occupied by voids compared to the total volume of the respective element) of from about 1% to about 50% by volume, such as greater than or about 2.5% by volume, such as greater than or about 5% by volume, such as greater than or about 7.5% by volume, such as greater than or about 10% by volume, such as greater than or about 12.5% ​​by volume, such as greater than or about 15% by volume, such as greater than or about 17.5% by volume, such as greater than or about 20% by volume, such as greater than or about 22.5% by volume, Such as greater than or about 25 volume %, such as greater than or about 27.5 volume %, such as greater than or about 30 volume %, such as greater than or about 32.5 volume %, such as greater than or about 35 volume %, such as greater than or about 40 volume %, such as greater than or about 45 volume %, or such as less than or about 50 volume %, such as less than or about 45 volume %, such as less than or about 40 volume %, such as less than or about 35 volume %, such as less than or about 30 volume %, such as less than or about 25 volume %, such as less than or about 20 volume %, such as less than or about 15 volume %, such as less than or about 10 volume %, or any range or value therebetween. FIG2A is a schematic cross-sectional perspective view of a polishing article 200a according to an embodiment of the present disclosure. One or more first polishing elements 204a may be formed in alternating concentric rings coupled to one or more second polishing elements 206a. In an embodiment, the first polishing elements 204a and the second polishing elements 206a may form a circular pad body 202. However, it should be understood that the polishing pads discussed herein may have other shapes, such as square, oval, quadrilateral, hexagonal, and other shapes known in the art. At least one of the one or more first polishing elements 204a and the one or more second polishing elements 206a may be formed using additive manufacturing, as will be discussed in more detail with respect to FIG3A through FIG3C. Furthermore, although not shown, in an embodiment, the polishing article 200 of FIG2A through FIG2K may include a transparent window in one or more surfaces of the polishing article. For example, such a window may facilitate integration with a polishing endpoint detection system. Nevertheless, in embodiments, a height 210 of the first polishing element(s) 204a from the support surface 203 to the upper surface 208 of each element 204a is greater than a height 212 of the second polishing element(s) 206a (from the support surface 203 to the top surface 209 of each element 206a). In such embodiments, the upper surface(s) 208 of the first polishing element(s) 204a protrude above the upper surface 209 of the second polishing element(s) 206a. In embodiments, the first polishing element 204a is disposed above a portion 212A of the second polishing element(s) 206a (e.g., the base 207 of the first polishing element(s) 204a is positioned above the support surface 203). In such embodiments, the height 210 may extend from the base 207 to the upper surface 208, but it should be understood that the upper surface 208 still extends above the upper surface 209. Grooves 218, or channels, may be formed between the first polishing element(s) 204a and include at least a portion of the second polishing element(s) 206a. During polishing, the upper surface(s) 208 of the first polishing element(s) 204a may form a polishing surface that contacts the substrate, while the grooves 218 retain and guide the polishing fluid (also known as a slurry). In one embodiment, the first polishing element(s) 204a have a height 210 that is greater than a height 212 of the second polishing element(s) 206a in a direction generally perpendicular to the polishing surface or upper surface(s) 208 of the pad body 202 (i.e., the Z direction in FIG. 2A ), such that the upper surface 208 is disposed above the upper surface 209. In this manner, channels or grooves 218 are formed on the top surface of the pad body 202. In embodiments, the widths of the first and second polishing elements and the groove depths may also allow for improved polishing. Thus, in an embodiment, the width 214 of the first polishing element 204a can be between about 250 μm and about 5 mm, such as greater than or about 300 μm, such as greater than or about 350 μm, such as greater than or about 400 μm, such as greater than or about 450 μm, such as greater than or about 500 μm, such as greater than or about 600 μm, such as greater than or about 700 μm, such as greater than or about 800 μm, such as greater than or about 900 μm, such as greater than or about 1 mm, such as greater than or about 1.5 mm, such as greater than or about 2 mm, such as greater than or about 2.5 mm, such as greater than or about 3 mm, such as greater than or about 3.5 mm, such as greater than or about 4 mm, such as greater than or about 4.5 mm, such as less than or about 4.9 mm, such as less than or about 4.8 mm, such as less than or about 4.7 mm, such as less than or about 4.6 mm, such as less than or about 4.5 mm, such as less than or about 4.25 mm, such as less than or about 4. In some embodiments, the first polishing element 204a may have a width between about 250 microns and about 2 mm, such as between about 500 microns and about 1.5 mm, such as between about 750 microns and about 1 mm. In some embodiments, the first polishing element 204a may have a width between about 250 microns and about 2 mm, such as between about 500 microns and about 1.5 mm, such as between about 750 microns and about 1 mm. In an embodiment, the groove width between adjacent(s) first polishing elements 204a can be between about 100 microns and about 1 mm, such as greater than or about 200 microns, such as greater than or about 300 microns, such as greater than or about 400 microns, such as greater than or about 500 microns, such as greater than or about 600 microns, such as greater than or about 700 microns, such as greater than or about 800 microns, such as greater than or about 900 microns, such as greater than or about 1 mm, or such as less than or about 1.9 mm, such as less than or about 1.8 mm, such as less than or about 1.7 mm, such as less than or about 1.6 mm, such as less than or about 1.5 mm, such as less than or about 1.4 mm, such as less than or about 1.3 mm, such as less than or about 1.2 mm, such as less than or about 1.1 mm, such as less than or about 1 mm, such as less than or about 900 microns, such as less than or about 800 microns, such as less than or about 700 microns, such as less than or about 600 microns, or any range or value therebetween. However, it should be understood that in embodiments, the width 214 and / or spacing 216 may vary across the radius of the polishing article 200 to define regions having different hardness, porosity, or both hardness and porosity, among other properties as known in the art. In an embodiment, the spacing 216 between adjacent (plurality) first polishing elements 204a can be between about 500 microns and about 5 mm, such as greater than or about 600 microns, such as greater than or about 700 microns, such as greater than or about 800 microns, such as greater than or about 900 microns, such as greater than or about 1 millimeter (mm), such as greater than or about 1.5 mm, such as greater than or about 2 mm, such as greater than or about 2.5 mm, such as greater than or about 3 mm, such as greater than or about 3.5 mm, such as greater than or about 4 mm, such as greater than or about 4.5 mm, or such as less than or about 4.9 mm, such as less than or about 4.8 mm, such as less than or about 4.7 mm, such as less than or about 4.6 mm, such as less than or about 4.5 mm, such as less than or about 4.25 mm, such as less than or about 4 mm, such as less than or about 3.75 mm, such as less than or about 3.5 mm, such as less than or about 3.25 mm, such as less than or about 3 mm, such as less than or about 2.75 mm. In some embodiments, the width 214 and / or spacing 216 may vary across the radius of the polishing article 200 to define regions having different properties as known in the art. Furthermore, in embodiments, the groove depth (alone or in combination with the grooves discussed above) measured from the upper surface 208 of the first polishing element 204a to the top surface 209 of the second polishing element 206 can be carefully controlled to provide controlled polishing and handling of the polishing slurry. Thus, in an embodiment, the groove depth may be between about 100 microns and about 1 mm, such as greater than or about 200 microns, such as greater than or about 300 microns, such as greater than or about 400 microns, such as greater than or about 500 microns, such as greater than or about 600 microns, such as greater than or about 700 microns, such as greater than or about 800 microns, such as greater than or about 900 microns, such as greater than or about 1 mm, or such as less than or about 1.9 mm, such as less than or about 1.8 mm, such as less than or about 1.7 mm, such as less than or about 1.6 mm, such as less than or about 1.5 mm, such as less than or about 1.4 mm, such as less than or about 1.3 mm, such as less than or about 1.2 mm, such as less than or about 1.1 mm, such as less than or about 1 mm, such as less than or about 900 microns, such as less than or about 800 microns, such as less than or about 700 microns, such as less than or about 600 microns, or any range or value therebetween. However, it should be understood that in embodiments, the groove depth may vary across the radius of the polishing article 200 to define regions of different properties as is known in the art. FIG2B illustrates a schematic, partial top view of a polishing article 200b according to an embodiment of the present disclosure. The polishing article 200b may include any one or more of the features discussed with respect to FIG2A and may include interlocking first and second polishing elements 204b, 206b. In embodiments, at least one of the interlocking first and second polishing elements 204b, 206b may be formed according to the methods and processes discussed herein. The interlocking first and second polishing elements 204b, 206b may form two or more concentric rings. The interlocking first polishing elements 204b may include protruding vertical ridges 220, and the second polishing elements 206b may include vertical recesses 222 for receiving the vertical ridges 220. Alternatively, the second polishing elements 206b may include protruding ridges, while the interlocking first polishing elements 204b include recesses. By interlocking the second polishing elements 206b with the first polishing elements 204b, the polishing article 200b can exhibit further improved mechanical strength, such as improved strength when exposed to applied shear forces that may occur during CMP processes and / or material handling. Furthermore, interlocking the first and second polishing elements can also increase the strength of the polishing pad, contributing to the physical integrity of the polishing pad. In embodiments, the interlocking elements can be physically interlocked or can be interlocked via one or more chemical forces. FIG2C is a schematic cross-sectional perspective view of a polishing article 200c according to an embodiment of the present disclosure. The polishing article 200c may include a plurality of first polishing elements 204c extending from a substrate layer, such as second polishing elements 206c. At least one of these first polishing elements 204c and second polishing elements 206c may be formed according to the embodiments discussed above, and the polishing article 200c may include one or more of the features discussed with respect to FIG2A and FIG2B. The upper surface 208 of the first polishing element 204c may form a polishing surface for contacting a substrate during polishing. In embodiments, the first polishing elements 204c and the second polishing elements 206c may have different materials and structural properties. For example, one or more first polishing elements 204c may be formed from a formulation discussed herein, while the second polishing elements 206c may be formed from the same formulation or a different formulation, as discussed in greater detail below, or may be formed from other materials known in the art. Similar to the polishing article 200 , the polishing article 200 c may be formed by 3D printing. In embodiments, the first polishing elements 204c may have similar sizes, such as substantially the same size, or may vary in size to produce different mechanical properties, such as porosity or elongation, across the polishing article 200c. One or more first polishing elements 204c may be uniformly distributed across the polishing article 200c, or may be arranged in a non-uniform pattern, such as any one or more of the patterns discussed above, to achieve target properties in the polishing article 200c. In FIG. 2C , first polishing element 204c is shown as a cylinder extending from second polishing element 206c. Alternatively, one or more first polishing elements 204c may have any suitable cross-sectional shape, such as a cylinder having an annular, partial annular (e.g., arcuate), elliptical, square, rectangular, triangular, polygonal, or other irregular cross-sectional shape, or a combination thereof. In embodiments, a first plurality of first polishing elements 204c may have a different cross-sectional shape than a second plurality of first polishing elements 204c to tune the hardness, mechanical strength, or other target properties of the polishing article 200c. Furthermore, it should be appreciated that, in embodiments, any of the first polishing elements 200, 200a, 200b, 200c, or a portion thereof, may have different shapes, sizes, heights, thicknesses, or the like to adjust one or more desired polishing pad properties. FIG2D illustrates a schematic, partial, cross-sectional side view of a pad body 202 of a polishing article 200d according to an embodiment of the present disclosure. The polishing article 200d may include one or more features of the polishing articles 200a, 200b, and / or 200c of FIG2A through FIG2C, either alone or in combination with interlocking first and second polishing elements 204d, 206d. As described above, at least one of the interlocking first and second polishing elements 204d, 206d may be formed from one or more formulations discussed herein, or may be formed from other materials known in the art. The interlocking first and second polishing elements 204d, 206d may include one or more concentric rings and / or discrete elements forming part of the pad body 202, such as those shown in FIG2A, FIG2B, and FIG2C. In an embodiment, the interlocking first polishing elements 204d may include protruding sidewalls 224, while the second polishing elements 206d may include hollow regions 225 shaped and sized to receive the protruding sidewalls 224 of the interlocking first polishing elements 204d. Alternatively, the second polishing elements 206d may include protruding sidewalls, while the interlocking first polishing elements 204d include regions configured to receive the protruding sidewalls. In an embodiment, the second polishing elements 206d and / or the first polishing elements 204d may include a collar region 223 disposed between a protrusion (such as 224 if the first polishing elements include protrusions) and an extended stem portion 229. As discussed, in an embodiment, by interlocking the second polishing elements 206d with the interlocking first polishing elements 204d, the polishing article 200d may exhibit even further increased tensile, compressive, and / or shear strength, when desired. In an embodiment, the boundary between the interlocking first polishing elements 204d and the second polishing elements 206d comprises a cohesive transition from at least one material composition to another material composition, such as a transition or composition gradient from a first formulation used to form the interlocking first polishing elements 204d to a second formulation used to form the second polishing elements 206d. The cohesive nature of the materials is a result of the additive manufacturing process described herein, which enables micron-scale control and intimate mixing of two or more chemical compositions in structures formed layer by layer. FIG2E shows a schematic partial cross-sectional view of a polishing article 200e according to an embodiment of the present disclosure. The polishing article 200e may include any one or more features of the polishing article 200d of FIG2D , but may exhibit different interlocking features. The polishing article 200e may include one or more first polishing elements 204e and second polishing elements 206e, each of which may comprise a plurality of concentric rings and / or discrete elements. At least one of the first polishing element 204e and the second polishing element 206e may be formed using one or more formulations discussed herein. In one embodiment, the first polishing element 204e may include horizontal ridges 226, while the second polishing element 206e may include horizontal recesses 227 to receive the horizontal ridges 226 of the first polishing element 204e. Alternatively, the second polishing element 206e may include horizontal ridges while the first polishing element 204e includes horizontal recesses. In embodiments, vertical interlocking features (such as the interlocking features of FIG. 2B ) and horizontal interlocking features (such as the interlocking features of FIG. 2D and FIG. 2E ) can be combined to form a polishing pad. Figures 2F through 2K illustrate schematic plan views of various polishing article designs according to embodiments of the present disclosure. Figures 2F through 2K include pixel maps having white areas (areas within white pixels) representing first polishing elements 204f-204k and black areas (areas within black pixels) representing second polishing element(s) 206f-206k, respectively. These first polishing elements may represent features for contacting and polishing a substrate. As similarly discussed herein, the white areas generally protrude above the black areas, such that channels are formed in the black areas between the white areas. In one example, the pixels in the pixel map are arranged in a rectangular array-type pattern (e.g., an X and Y oriented array), and these pixels are used to define the locations of various materials within a layer or portion of a layer of an advanced polishing pad. In another example, the pixels in the pixel map are arranged in a hexagonal close-packed array-type pattern (e.g., one pixel is surrounded by six nearest neighbors), and these pixels are used to define the locations of various materials within a layer or portion of a layer of a polishing pad. Polishing slurry can flow through and remain in the channels during polishing. The polishing article shown in Figures 2F through 2K can be formed by depositing a plurality of material layers using an additive manufacturing process. Each of these layers can include two or more materials to form first polishing elements 204f-204k and second polishing element(s) 206f-206k. In one embodiment, the first polishing elements 204f-204k can be thicker than the second polishing elements 206f-206k in a direction perpendicular to a plane parallel to the material layers, such that grooves and / or channels are formed on the top surface of the polishing pad. However, as described above, in one embodiment, when forming a polishing article according to one or more of the illustrated pixel diagrams, only one material (e.g., one curable precursor formulation) can be utilized, or can be applied in a substantially uniform layer or depth. Regardless of the form of the polishing pad, in embodiments, the polishing pads described herein may be formed from at least one resin precursor composition, as discussed in greater detail below, and may contain at least one curable precursor formulation. The curable precursor formulation may be the curable precursor formulation described above, or may include one or more additional precursor formulations suitable for use in build-up manufacturing. For example, although other formation methods may be utilized, in embodiments, one or more of the polishing articles 110, 200, 200a, 200b, 200c, 200d, and other shapes and designs may be formed using additive manufacturing. FIG3A is a schematic cross-sectional view of an additive manufacturing system 350 that can be used to form a polishing pad using an additive manufacturing process, according to one or more embodiments of the present disclosure. The additive manufacturing process may include, but is not limited to, processes such as polyjet deposition, inkjet printing, fused deposition modeling, binder jetting, powder bed fusion, selective laser sintering, stereolithography, slot photopolymerization, digital light processing, sheet lamination, directed energy deposition, or other similar 3D deposition processes. The additive manufacturing system 350 may include a precursor delivery section 353, a precursor formulation section 354, and a deposition section 355. The precursor formulation section 354 comprises the section of the additive manufacturing system 350 in which curable precursor formulation components located in the precursor delivery section 353 are mixed to form one or more curable precursor formulations and / or printable resin precursor compositions. The deposition section 355 will typically include an additive manufacturing apparatus (also referred to herein as a print station 300) for depositing one or more precursor compositions or formulations onto a layer disposed on the support 302. The polishing article 200 may be printed onto the support 302 within the print station 300. Typically, the polishing article 200 is formed layer by layer using one or more drop jet printers 306 (such as printer 306A and printer 306B shown in FIG. 3A ) from a CAD (computer-aided design) program. The printers 306A, 306B and the support 302 can move relative to each other during the printing process. The droplet jet printer 306 may include one or more print heads 308 (e.g., print heads 308A and 308B) having one or more nozzles (e.g., nozzles 309-312) for dispensing a liquid precursor. In one embodiment, as shown in FIG. 3A , the printer 306A includes a print head 308A having a nozzle 309 and a second print head 308B having a second nozzle 310. Nozzle 309 may be configured to dispense a first curable precursor formulation to form a first polymer material, such as a porous or non-porous polymer, while nozzle 310 may be configured to dispense a second curable precursor formulation to form a second polymer material, such as a non-porous or porous polymer. The curable precursor formulations can be considered to be in liquid form prior to curing and, therefore, can be referred to as liquid pre-polymer compositions. These liquid pre-polymer compositions can be dispensed at selected locations or areas to form a porous polishing pad having targeted properties. These selected locations collectively form a target print pattern, which can be stored as a CAD-compatible file and then read by the electronic controller 305, which controls the delivery of droplets from the nozzles of the droplet jet printer 306. It should be understood that in embodiments, one or both of the first and second curable precursor formulations can be formed according to the formulations and compositions discussed above, or can include a combination of the formulations or compositions discussed herein with additional compositions or formulations. Electronic controller 305 is typically used to facilitate control and automation of components within additive manufacturing system 350 (including print station 300). Electronic controller 305 can be, for example, a computer, a programmable logic controller, or an embedded controller. Electronic controller 305 typically includes a central processing unit (CPU) (not shown), memory (not shown), and support circuitry (not shown) for input and output (I / O). The CPU can be any form of computer processor used in an industrial environment to control various system functions, substrate movement, chamber processing, support hardware (e.g., sensors, motors, heaters, etc.), and monitor processes executed within the system. The memory is connected to the CPU and can be one or more readily available non-volatile memory such as random access memory (RAM), flash memory, read-only memory (ROM), a floppy disk, a hard disk, or any other form of local or remote digital storage. Software instructions and data can be encoded and stored in the memory for directing the CPU. Support circuits are also connected to the CPU for supporting the processor in a conventional manner. The support circuits may include cache, power supplies, clock circuits, input / output circuitry, subsystems, and the like. A program (or computer instructions) readable by the electronic controller 305 determines which tasks are performed by components in the additive manufacturing system 350. The program may be software readable by the electronic controller 305 and includes code for performing tasks associated with monitoring, executing, and controlling the delivery and positioning of droplets delivered from the printer 306, the movement, support, and / or positioning of components within the print station 300, and various process tasks and sequences executed in the electronic controller 305. After 3D printing, the polished article 200 can be cured or partially cured using a curing device 320 located within the deposition section 355 of the additive manufacturing system 350. However, in embodiments, curing can be performed elsewhere within or external to the station 300. The curing process performed by the curing device 320 can be performed by heating the printed polishing pad to a curing temperature or exposing the pad to one or more forms of electromagnetic radiation or electron beam curing. In one example, the curing process can be performed by exposing the printed polishing pad to radiation 321 generated by an electromagnetic radiation source, such as a visible light source, an ultraviolet light source, an x-ray source, or other types of electromagnetic wave sources located within the curing device 320. In one embodiment, one or more of the first polishing elements 204 and / or one or more of the second polishing elements 206 can be formed from a mixture of two or more curable precursor formulations. In one example, the first curable precursor formulation can be dispensed as droplets by a first print head (such as print head 308A), and the second curable precursor formulation can be dispensed as droplets by a second print head (such as print head 308B of printer 306A). Forming the first polishing element 204 from the mixture of droplets delivered from the multiple print heads generally includes aligning pixels corresponding to the first polishing element 204 over predetermined pixels within a deposition map found in electronic controller 305. Print head 308A can then be aligned with the pixels corresponding to the locations where the first polishing element 204 is to be formed, and droplets can then be dispensed over the predetermined pixels. Thus, in an embodiment, the polishing pad may be formed from a first printable resin precursor composition comprising one or more curable precursor formulations formed by depositing droplets of a first curable precursor formulation and a second curable precursor formulation formed by depositing droplets of a second curable precursor formulation. FIG3B illustrates a schematic cross-sectional view of an exemplary printing station 300 and a portion of a polishing article 200 during a pad manufacturing process. As shown in FIG3B , the printing station 300 includes two printers 306A and 306B for sequentially forming a portion of the polishing article 200. The portion of the polishing article 200 illustrated in FIG3B may, for example, comprise a portion of the first polishing element 204 or the second polishing element 206 in the final polishing article 200. During processing, the printers 306A and 306B are configured to deliver droplets "A" or "B," respectively, to a first surface of a support 302 and then, in sequence, to a surface of a growing polishing article disposed on the support 302 in a layer-by-layer process. These droplets may contain the same curable precursor formulation or different curable precursor formulations. As shown in FIG3B , a second layer 348 may be deposited on a first layer 346 already formed on the support 302. In one embodiment, the second layer 348 is formed on the first layer 346, which has already been processed by a curing device 320, which is positioned downstream of the printers 306A and 306B in the manufacturing process. In one embodiment, while one or more of the printers 306A and 306B deposit droplets "A" and / or "B" onto the surface 346A of the previously formed first layer 346, portions of the second layer 348 may be simultaneously processed by the curing device 320. In this case, the layer currently being formed may include processed portions 348A and unprocessed portions 348B positioned on either side of a curing region 349A. The unprocessed portion 348B generally comprises an array of dispensed droplets, such as dispensed droplets 343 and 347, which are deposited on the surface 346A of the previously formed first layer 346 using printers 306B and 306A, respectively. FIG3C shows a close-up cross-sectional view of an exemplary dispensed droplet 343 disposed on surface 346A of a previously formed first layer 346. Based on the properties of the material within dispensed droplet 343, and due to the surface energy of surface 346A, the dispensed droplet can spread across the surface by an amount greater than the size of the original dispensed droplet (e.g., droplet "A" or "B") due to surface tension. The amount of spread of the dispensed droplet will vary over time from the moment the droplet is deposited on surface 346A. However, after a very short period of time (e.g., <1 second), the spread of the droplet will reach an equilibrium size and an equilibrium contact angle α. The spread of the dispensed droplet across the surface affects the resolution of the droplet's placement on the surface of the growing polishing article, and therefore, the resolution of features and material compositions found in various regions of the final polished article. In embodiments, after one or both of the droplets "A" and "B" have been in contact with the substrate surface for a period of time, it may be useful to expose one or both of the droplets "A" and "B" to an energy source, such as any one or more of the energy sources discussed above, to solidify or "fix" each droplet to a target size before the droplet has a chance to spread to its unsolidified equilibrium size on the substrate surface. In this case, the energy supplied by the solidification device 320 to the dispensed droplets and the surface on which the droplets are placed, as well as the droplet material composition, is adjusted to control the resolution of each of the dispensed droplets. Thus, one optional parameter to be controlled or tuned during the 3D printing process is the control of the surface tension of the dispensed droplets relative to the surface on which the droplets are placed. In an embodiment, one or more curing enhancing components (e.g., photoinitiators, one or more of which have been discussed above) are added to the curable precursor formulation to control the kinetics of the curing process, prevent oxygen inhibition, and / or control the contact angle of the droplets on the surface of the deposited droplets. It should be noted that curing enhancing components generally include materials that can adjust the following: 1) the amount of bulk curing that occurs in the material in the dispensed droplets during the initial exposure to the target amount of electromagnetic radiation, 2) the amount of surface curing that occurs in the material in the dispensed droplets during the initial exposure to the target amount of electromagnetic radiation, and 3) the amount of surface property modification (e.g., additives) to the surface cured regions of the dispensed droplets. The amount of surface property modification to the surface cured regions of the dispensed droplets generally includes adjusting the surface energy of the cured or partially cured polymer found at the surface of the dispensed and at least partially cured droplets. It has been found useful to partially cure each dispensed droplet to "fix" its surface properties and size during the printing process. The ability to "fix" the droplets at a target size can be achieved by adding a target amount of at least one cure enhancing component to the material composition and delivering a sufficient amount of electromagnetic energy from the curing device 320 during the additive manufacturing process. In some embodiments, a device capable of delivering between about 1 millijoule / square centimeter (mJ / cm2) to the droplets during the additive layer formation process is used. 2 ) and 100 mJ / cm 2 between, such as about 10-20 mJ / cm 2 The UV radiation can be provided by any UV source, such as a mercury microwave arc lamp (e.g., H bulb, H + The UV radiation may have a wavelength between about 170 nm and about 500 nm. In one embodiment, the droplet size 343A of dispensed droplets "A" and "B" may be from about 10 to about 200 microns, such as from about 20 to about 175 microns, such as from about 30 to about 150 microns, such as from about 35 to about 125 microns, such as from about 40 to about 100 microns, such as from about 50 to about 70 microns, or any range or value therebetween. Depending on the surface energy (dynes) of the substrate or polymer layer onto which the droplets are dispensed, the uncured droplets may spread to a fixed droplet size 343A between about 10 and about 500 microns, such as between about 50 and about 200 microns, on and across the surface. In one example, the height of such droplets may be from about 5 to about 100 microns, depending on factors such as surface energy, wetting, and / or the resin precursor composition, which may include other additives such as flow aids, thickeners, and surfactants. One source of additives is BYK-Gardner GmbH of Geretsried, Germany. In embodiments, it may be useful to select the photoinitiator, the amount of photoinitiator in the droplet composition, and / or the amount of energy supplied by the curing device 320 to allow the dispensed droplet to "set" at a desired size in less than about 1 second (e.g., less than about 0.5 seconds) after the dispensed droplet contacts the surface to which it is to be fixed. The actual time it takes to partially cure the dispensed droplet due to exposure to the delivered curing energy may be longer or shorter than the time the droplet resided on the surface before it was exposed to the delivered radiation, as the curing time of the dispensed droplet will depend on the amount of radiation energy and the wavelength of the energy provided from the curing device 320. In one example, for approximately 10-15 mJ / cm 2 At a radiation exposure level of 1000 nm UV radiation, the exposure time for partially curing a 120 μm dispensed droplet is approximately 0.4 μs. As an example of a method for "pinning" the droplet within this short timeframe, the dispensing nozzle of the droplet jet printer 306 can be positioned at a short distance from the surface of the polishing pad, such as between 0.1 and 10 millimeters (mm), or even between 0.5 and 1 mm, while the polishing pad surface 346A is exposed to radiation 321 delivered from the curing device 320. It has also been discovered that by controlling the droplet composition, the amount of curing of the previously formed layer (e.g., the surface energy of the previously formed layer), the amount of energy from the curing device 320, and the amount of photoinitiator in the droplet composition, the contact angle α of the droplet can be controlled to achieve a desired droplet size, and thus the resolution of the printing process. In one example, the base layer cure can be a cure to approximately 70% acrylate conversion, as discussed in more detail below. A droplet that has been immobilized or at least partially solidified is also referred to herein as a solidified droplet. In an embodiment, the immobilized droplet size 343A is between about 10 and about 200 microns, such as about 20 microns to about 175 microns, such as about 30 microns to about 150 microns, such as about 35 microns to about 125 microns, such as about 40 microns to about 100 microns, such as about 50 to about 70 microns, or any range or value therebetween. In an embodiment, the contact angle of the "immobilized" droplet (also referred to herein as the dynamic contact angle (e.g., the non-equilibrium contact angle)) can be desirably controlled to a value of at least about 50°, such as greater than or about 55°, such as greater than or about 60°, such as greater than or about 70°, or any range or value therebetween. The resolution of pixels within a pixel map for a layer or portion of a layer formed by an additive manufacturing process can be defined by the average "fixed" size of the dispensed droplets. Thus, the material composition of a layer or portion of a layer can be defined by a "dispensed droplet composition," which is the percentage of the total number of pixels within the layer or portion of the layer that include droplets of a certain droplet composition. In one example, if a region of a layer of a polishing pad is formed as having a dispensed droplet composition that is 60% of a first dispensed droplet composition, then 60% of the pixels within that region will include fixed droplets comprising the first material composition. In cases where a portion of a layer contains more than one material composition, it is also useful to define the material composition of a region within the polishing pad as having a "material composition ratio." The material composition ratio is the ratio of the number of pixels having the first material composition disposed thereon to the number of pixels having the second material composition disposed thereon. In one example, if a region is defined as containing 1,000 pixels disposed over an area of ​​the surface, and 600 pixels contain sessile droplets of the first droplet composition and 400 pixels contain sessile droplets of the second droplet composition, the material composition ratio would include a 3:2 ratio of the first droplet composition to the second droplet composition. In embodiments where each pixel may contain more than one sessile droplet (e.g., 1.2 droplets per pixel), the material composition ratio would be defined by the ratio of the number of sessile droplets of the first material to the number of sessile droplets of the second material found within the defined region. In one example, if a region is defined as containing 1,000 pixels, and within this region there are 800 sessile droplets of the first droplet composition and 400 sessile droplets of the second droplet composition, the material composition ratio for this region of the polishing pad would be 2:1. The amount of cure at the surface of the dispensed droplets forming the next underlying layer is a noteworthy parameter in the polishing pad formation process, as the amount of cure in this "initial dose" affects the surface energy to which subsequent layers of the dispensed droplets will be exposed during the buildup process. The amount of the initial cure dose is also noteworthy because it will also affect the amount of cure achieved in each deposited layer in the resulting polishing pad, as subsequent layers are repeatedly exposed to additional transmitted curing radiation supplied by the subsequent layers as they grow on top of each other. Preventing over-curing of a forming layer is generally beneficial, as this will affect the material properties of the over-cured material and / or the wettability of the surface of the cured layer by subsequently deposited dispensed droplets in subsequent processes. However, in some embodiments, the radiation level delivered during the initial cure dose can vary from layer to layer. For example, due to the varying compositions of the dispensed droplets in different layers, the amount of UV radiation exposure in each initial dose can be adjusted to provide a useful cure level in the currently exposed layer and in one or more of the underlying layers. In embodiments, it may be useful to control the composition of the droplets and the amount of energy delivered from the curing device 320 during an initial curing process, which is a process in which the deposited layer of dispensed droplets is directly exposed to energy provided by the curing device 320 so that the layer is only partially cured a target amount. Typically, for the initial curing process, it is useful to primarily surface cure the dispensed droplets rather than bulk cure the dispensed droplets because controlling the surface energy of the forming layer is significant for controlling the size of the dispensed droplets. In one example, the amount by which the dispensed droplets are partially cured can be defined by the chemical conversion rate of the material in the dispensed droplets. In one example, the conversion rate of the acrylate found in the dispensed droplets used to form a layer containing urethane polyacrylate is defined by the percentage x, which is calculated by the following equation: Among them A C=C and A C=O This is the value of the C=C peak at 910 cm-1 and the C=O peak at 1700 cm-1 found using FT-IR spectroscopy. During polymerization, the C=C bonds in acrylates are converted to C-C bonds, while the C=O bonds in acrylates are not converted. Therefore, the intensity of the C=C to C=O peak indicates the conversion rate of acrylates. C=C / A C=O The ratio refers to the relative ratio of C=C to C=O bonds within the solidified droplet, and thus (A C=C / A C=O ) 0 means A in the droplet C=CWith A C=O The initial ratio of (A C=C / A C=O ) X A represents the surface of the substrate after the droplet solidifies C=C With A C=O In some embodiments, the amount of the layer initially cured may be equal to or greater than about 70% of the dispensed droplet. In some embodiments, it may be useful to partially cure the material in the dispensed droplet during the initial exposure of the dispensed droplet to a level of about 70% to about 80% of the curing energy so that a target contact angle for the dispensed droplet can be achieved. It is believed that the uncured or partial acrylate material on the top surface copolymerizes with subsequent droplets and, thus, creates cohesive forces between the layers. It may also be important to partially solidify the dispensed droplets during the initial layer formation process to ensure that some chemical bonding / adhesion will occur between subsequently deposited layers due to the presence of residual unbonded groups (such as residual acrylic groups). Since the remaining unbonded groups have not yet polymerized, these groups can participate in forming chemical bonds with subsequently deposited layers. Thus, the formation of chemical bonds between layers can increase the mechanical strength of the resulting polishing pad in the direction of layer-by-layer growth (e.g., the Z direction in FIG. 3B ) during the pad formation process. As described above, the bonding between layers can thus be formed by both physical and / or chemical forces. The mixture of dispensed droplets or the positioning of dispensed droplets can be adjusted layer by layer to form a polishing pad having tunable properties for each layer and a target pad property as a composite of the formed layers. In one example, as shown in FIG. 3B , the mixture of dispensed droplets includes a 50:50 ratio of dispensed droplets 343 and 347 (or a 1:1 material composition ratio), wherein dispensed droplet 343 includes at least one material different from the material found in dispensed droplet 347. The properties of portions of the pad body 202 (such as the first polishing element 204 and / or the second polishing element 206) can be adjusted or tuned based on the ratio and / or distribution of the first and second components formed by the positioning of the dispensed droplets during the deposition process. For example, the weight % of the first component can be from about 1 weight % to about 100% by weight based on the weight of the total composition, such as greater than or about 5 weight %, such as greater than or about 10 weight %, such as greater than or about 15 weight %, such as greater than or about 20 weight %, such as greater than or about 25 weight %, such as greater than or about 30 weight %, such as greater than or about 35 weight %, such as greater than or about 40 weight %, such as greater than or about 45 weight %, such as greater than or about 50 weight %, such as greater than or about 55 weight %, such as greater than or about 60 weight %, such as greater than or about 65 weight %, such as greater than or about 70 weight %, such as greater than or about 75 weight %, such as greater than or about 80 weight %, such as greater than or about 85 weight %, such as greater than or about 90 weight %, such as greater than or about 95 weight %, such as greater than or about 97. 5 weight %, such as greater than or about 99 weight %, or such as less than or about 95 weight %, such as less than or about 90 weight %, such as less than or about 85 weight %, such as less than or about 80 weight %, such as less than or about 75 weight %, such as less than or about 70 weight %, such as less than or about 65 weight %, such as less than or about 60 weight %, such as less than or about 55 weight %, such as less than or about 50 weight %, such as less than or about 45 weight %, such as less than or about 40 weight %, such as less than or about 35 weight %, such as less than or about 30 weight %, such as less than or about 25 weight %, such as less than or about 20 weight %, such as less than or about 15 weight %, such as less than or about 10 weight %, such as less than or about 5 weight %, such as less than or about 2.5 weight %, such as less than or about 1 weight %, or any range or value therebetween. In a similar manner, the second component can be from about 1 wt % to about 100 wt % based on the weight of the total composition, such as greater than or about 5 wt %, such as greater than or about 10 wt %, such as greater than or about 15 wt %, such as greater than or about 20 wt %, such as greater than or about 25 wt %, such as greater than or about 30 wt %, such as greater than or about 35 wt %, such as greater than or about 40 wt %, such as greater than or about 45 wt %, such as greater than or about 50 wt %, such as greater than or about 55 wt %, such as greater than or about 60 wt %, such as greater than or about 65 wt %, such as greater than or about 70 wt %, such as greater than or about 75 wt %, such as greater than or about 80 wt %, such as greater than or about 85 wt %, such as greater than or about 90 wt %, such as greater than or about 95 wt %, such as greater than or about 97. 5 weight %, such as greater than or about 99 weight %, or such as less than or about 95 weight %, such as less than or about 90 weight %, such as less than or about 85 weight %, such as less than or about 80 weight %, such as less than or about 75 weight %, such as less than or about 70 weight %, such as less than or about 65 weight %, such as less than or about 60 weight %, such as less than or about 55 weight %, such as less than or about 50 weight %, such as less than or about 45 weight %, such as less than or about 40 weight %, such as less than or about 35 weight %, such as less than or about 30 weight %, such as less than or about 25 weight %, such as less than or about 20 weight %, such as less than or about 15 weight %, such as less than or about 10 weight %, such as less than or about 5 weight %, such as less than or about 2.5 weight %, such as less than or about 1 weight %, or any range or value therebetween. Depending on the desired material properties, such as hardness and / or storage modulus, compositions of two or more materials can be mixed in varying ratios to achieve a target effect. In one embodiment, the composition of the first polishing element 204 and / or the second polishing element 206 is controlled by selecting at least one composition or mixture of compositions and the size, position, and / or density of the droplets dispensed by one or more printers. Accordingly, the electronic controller 305 is generally adapted to position the nozzles 309-310, 311-312 to form a layer having interdigitated droplets positioned at a target density and pattern on the surface of the forming polishing pad. In one embodiment, the dispensed droplets can be deposited in such a manner as to ensure that each droplet is placed where it does not blend with other droplets, and thus each droplet remains a discrete "island" of material prior to solidification. In some embodiments, dispensed droplets can also be placed on top of previously dispensed droplets within the same layer to increase the build rate or blend material properties. The placement of the droplets relative to each other on the surface can also be adjusted to allow for partial mixing of each of the dispensed droplets in the layer. In some cases, it may be useful to place the droplets closer together or further apart to provide more or less mixing of the components in adjacent droplets, respectively. It has been discovered that controlling the placement of droplets relative to other dispensed droplets and the composition of each droplet can have an impact on the mechanical and polishing properties of the resulting polishing pad. In one embodiment, dispensed droplets of at least two different curable precursor formulations may be deposited in such a manner as to ensure that each droplet is placed at a location on the surface that does not intermingle with other droplets and, thus, each droplet remains a discrete "island" of material prior to curing. In one embodiment, each of the at least two resin precursor compositions is formulated to provide a material having a different zeta potential, such that the average zeta potential over a target area of ​​the surface of the formed polishing pad can be adjusted and / or controlled by adjusting the percentage of droplets of each type of resin precursor composition within the target area. Additionally or alternatively, the placement of the droplets of the at least two different resin precursor compositions is adjusted to allow each of the dispensed droplets to at least partially mix in the deposited layer. Thus, where each of the at least two resin precursor compositions is formulated to provide a material having a different zeta potential, the average zeta potential over a target area of ​​the surface of the formed polishing pad can be adjusted and / or controlled by adjusting the amount of mixing of dispensed droplets of each type of resin precursor composition within at least a portion of the target area. Although generally discussed herein as two compositions for forming the first polishing elements 204 and / or the second polishing elements 206, it should be understood that the present disclosure encompasses forming features on a polishing pad using a plurality of curable precursor formulations interconnected by a composition gradient or forming features using only one material. In embodiments, the composition of the first polishing elements 204 and / or the second polishing elements 206 in the polishing pad is adjusted in a plane parallel to the polishing surface and / or through the thickness of the polishing pad, as discussed further below. FIG4 illustrates exemplary operations in a method 400 according to some embodiments of the present technology, which may be discussed with respect to the print station 300 by way of non-limiting example only. The method may be performed in a variety of polishing chambers or apparatuses, including the polishing system 100 or the print station 300 described above. The method 400 may include several optional operations, which may or may not be specifically associated with some embodiments of the method according to the present technology. For example, a number of operations are described to provide a broader range of structure formation, but these operations are not critical to the technology or may be performed by alternative methods, as will be readily understood. Furthermore, while the method may describe a formation method perpendicularly from the word line side of the structure to the bit line side of the structure, it should be understood that another orientation from the bit line to the word line side may be utilized. 3A , in one embodiment, a first curable precursor formulation 356 and optionally a second curable precursor formulation 357 and optionally a first porosity former / emulsifier mixture 352 are mixed with a diluent 358 to form a first printable resin precursor composition 359, which is delivered to a reservoir 304B of a printer 306B and used to form a portion of a pad body 202 by depositing one or more droplets of the curable precursor formulation in operation 405. Similarly, the third curable precursor formulation 366 and optionally the fourth curable precursor formulation 367 and optionally the second porosity former / emulsifier mixture 365 can be mixed with a diluent 368 to form a second printable resin precursor composition 369, which is delivered to the reservoir 304A of the printer 306A and used to form another portion of the polishing article body 202. In one embodiment, the first curable precursor formulation 356 and the third curable precursor formulation 366 can include a first oligomer, such as the multifunctional oligomers discussed above, the second precursor 357 and the fourth precursor 367 can include one or more reactive monomers, such as the one or more reactive monomers discussed above, and the diluent 358 and the diluent 368 each include a reactive diluent (e.g., a monomer) and / or an initiator (e.g., a photoinitiator). However, as described above, surprisingly the curable precursor formulation exhibits excellent viscosity upon mixing and, therefore, can be dispensed from a nozzle after mixing the curable precursor components as described above. Nevertheless, after depositing one or more droplets of the curable precursor formulation, the precursor formulation can be cured at operation 410 according to one or more curing methods discussed above. As described above, after curing operation 410, deposition operation 405 can be repeated, followed by additional curing operations 410, until the desired polishing article thickness, morphology, shape, or size is achieved. Surprisingly, polishing articles formed using the compositions and formulations discussed herein exhibit excellent stability, as shown by the ratio of the storage modulus at 30°C (referred to as E30) to the storage modulus at 90°C (referred to as E90) measured using dynamic mechanical analysis (DMA). Thus, in embodiments, the polishing article according to the present technology may exhibit the following ratio of E30 storage modulus to E90 storage modulus: greater than or about 1, such as greater than or about 2, such as greater than or about 3, such as greater than or about 4, such as greater than or about 5, such as greater than or about 7.5, such as greater than or about 10, such as greater than or about 12.5, such as greater than or about 15, such as greater than or about 17.5, such as greater than or about 20, such as greater than or about 22.5, such as greater than or about 25, such as greater than or about 27.5, such as greater than or about 30, such as less than or about 50, such as less than or about 45, such as less than or about 40, such as less than or about 35, such as less than or about 30, such as less than or about 25, such as less than or about 20, or any range or value therebetween. In embodiments, the polishing article may exhibit an E30, E90, or both E30 and E90 of less than or about 1200 MPa, such as less than or about 1100 MPa, such as less than or about 1000 MPa, such as less than or about 900 MPa, such as less than or about 800 MPa, such as less than or about 700 MPa, such as less than or about 600 MPa, such as less than or about 500 MPa, or any range or value therebetween. FIG5 illustrates exemplary operations in method 400 for polishing a substrate having one or more copper features, in accordance with some embodiments of the present technology. Method 500 may be performed using a substrate carrier or carrier head, such as carrier head 108 described herein. In some embodiments, method 500 may include operations prior to polishing the substrate. For example, prior to polishing, the substrate may have one or more deposition and / or etching operations performed, as well as any planarization or other process operations performed. Method 500 may include several operations that can be automatically performed within the system to limit manual interaction and provide increased efficiency and accuracy relative to manual operations. Method 500 may be performed as part of or in conjunction with a conventional CMP polishing process. Method 500 may include, at operation 501, forming a polishing article according to one or more embodiments described above. The formed polishing article may then be used to engage a substrate having one or more copper features with a membrane of a carrier head at operation 505. The rear surface of the substrate may be positioned against a substrate mounting surface (e.g., a flexible membrane), which may be used to apply pressure to the rear surface of the substrate during a polishing operation. An inner ring disposed radially outward from the substrate may be used to maintain the substrate in a desired position relative to the carrier head and the flexible membrane. In one embodiment, prior to engaging the substrate with the membrane of the carrier head, the substrate may have a sacrificial layer deposited on a surface opposite the surface having the material to be polished. At operation 410, one or more materials (including one or more copper features) on the substrate may be polished for a first period of time. At operation 510, a polishing slurry from a slurry source may be provided to a polishing pad, as appropriate. The substrate can be positioned within a carrier head, which rotates and / or translates (or sweeps) the substrate around the surface of the polishing pad so that abrasive particles within the polishing slurry can gradually remove material from the surface of the substrate in a desired pattern and / or achieve a desired film thickness distribution. In some embodiments, the polishing pad can be rotated and / or translated in addition to or in lieu of rotating and / or translating the carrier head. During the first time period, the removal of one or more materials can be substantially uniform across the entire surface of the substrate. Specifically, the removal rate at the center of the substrate can be within 90%, 95%, 97%, or 99% of the removal rate at the periphery of the substrate. That is, as described above, it has been surprisingly discovered that polishing pads formed according to the present technology are well-positioned for polishing substrates used in hybrid bonding, such as substrates having one or more copper features. Thus, in embodiments, the polishing methods discussed herein can produce substrates having dishing of less than or about 5 nm, such as less than or about 4.5 nm, such as less than or about 4 nm, such as less than or about 3.5 nm, such as less than or about 3 nm, such as less than or about 2.5 nm, such as less than or about 2 nm, such as less than or about 1.5 nm, such as less than or about 1 nm, or any range or value therebetween. Furthermore, in embodiments, the polishing methods discussed herein can produce substrates having a dielectric rounding angle of less than or about 2 nm, such as less than or about 1.8 nm, such as less than or about 1.6 nm, such as less than or about 1.4 nm, such as less than or about 1.2 nm, such as less than or about 1 nm, such as less than or about 0.8 nm, such as less than or about 0.6 nm, such as less than or about 0.5 nm, or any range or value therebetween. Additionally or alternatively, the polishing methods discussed herein can produce substrates having a dielectric roughness of less than or about 0.5 nm, such as less than or about 0.4 nm, such as less than or about 0.3 nm, such as less than or about 0.2 nm, such as less than or about 0.15 nm, or any range or value therebetween. Furthermore, in embodiments, the polishing methods discussed herein may have a barrier protrusion risk of less than or about 80%, such as less than or about 75%, such as less than or about 70%, such as less than or about 65%, such as less than or about 60%, such as less than or about 55%, such as less than or about 50%, such as less than or about 45%, such as less than or about 40%, such as less than or about 35%, or any range or value therebetween. That is, as described above, particularly for substrates used for hybrid bonding, the presence of dents, rounded corners, roughness, and / or barrier protrusions during or after polishing is increasingly problematic due to process limitations during bonding. When the dent depth is less than or equal to 5 nm, subsequent annealing to bond separate copper elements may be effective because the copper can be close enough to bond to each other during the annealing step. During the annealing step, the copper elements from the separate substrates can be squeezed toward each other, can contact each other, and can bond. Therefore, lower dents or dent depths enable lower temperatures or shorter anneals, which are beneficial for sensitive materials and parts. Thus, the present technology surprisingly provides uniquely positioned methods and polished substrates for excellent hybrid bonding and a low incidence of hybrid bond failure. In embodiments, the surface of the substrate to be polished may contain one or more additional materials, such as oxides, nitrides, valve metals, or combinations thereof. For example, by way of example only, the oxide may include silicon oxide, the nitride may include silicon nitride or silicon carbon nitride, and the valve metal may include tantalum or titanium. In embodiments, the removal rates of the one or more copper materials and the oxides, nitrides, valve metals, or combinations thereof may be very similar, as indicated by the reduced risk of dishing, rounded corners, and barrier protrusion discussed above. Thus, in embodiments, the removal rates of the one or more copper materials and the oxides, nitrides, valve metals, or combinations thereof may differ by less than or about 20%, such as less than or about 18%, such as less than or about 16%, such as less than or about 14%, such as less than or about 12%, such as less than or about 10%, such as less than or about 8%, such as less than or about 6%, such as less than or about 5%, or any range or value therebetween. However, as described above, polishing articles according to the present technology can also be further customized for specific applications by varying one or more of hardness, hardness variation, feature size, feature depth, and the like. Therefore, in one embodiment, method 500 may include an analysis operation 515. At operation 515, by way of example only, one or more metrics of the substrate, such as corner rounding, concavity, roughness, and barrier rib protrusion, may be analyzed manually or automatically. Based on the analysis, one or more features of the polishing article may be modified. By way of example only, if concavity or corner rounding is present, or if barrier rib protrusion is present, the hardness may be increased or the groove depth may be modified. Thus, if these features are modified, an optional polishing operation 520 may be performed using the modified polishing article. Nevertheless, in embodiments, the present technology may further include bonding semiconductor components to the polished surface after polishing. Surprisingly, due at least in part to the excellent polishing discussed herein, after hybrid bonding, the components and substrate exhibit the following leakage current (which can be measured on a patterned wafer using, for example, a comb / snake structure, or on a blanket wafer using, for example, a mercury (Ag) probe station): less than or about 1000 picoamperes (pA), such as less than or about 100 pA, such as less than or about 75 pA, such as less than or about 50 pA, such as less than or about 25 pA, such as less than or about 10 pA, such as less than or about 8 pA, such as less than or about 6 pA, such as less than or about 4 pA, such as less than or about 1 pA, or any range or value therebetween. In the foregoing description, for the purpose of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details. While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. Furthermore, to avoid unnecessarily obscuring the present technology, many well-known processes and components have not been described. Therefore, the above description should not be construed as limiting the scope of the present technology. Where a range of values ​​is provided, it is understood that, unless the context clearly dictates otherwise, each intervening value between the upper and lower limits of the range to the smallest fraction of the lower limit is also specifically disclosed. Any narrower range between any specified value or unspecified intervening value within the specified range and any other specified value or intervening value within the specified range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded within the range, and each range in which one, neither, or both of the limits are included within the smaller range is also encompassed within this technology, subject to any specifically excluded limits within the specified range. If the specified range includes one or both limits, ranges excluding one or both of those included limits are also encompassed. As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a polishing pad" includes a plurality of such pads and reference to "the formulation" includes reference to one or more formulations and equivalents thereof known to those skilled in the art, and so forth. In addition, the terms “comprise(s) / comprising,” “contain(s) / containing,” and “include(s) / including,” when used in this specification and the following claims, are intended to specify the presence of stated features, integers, components, or operations, but do not preclude the presence or addition of one or more other features, integers, components, operations, actions, or groups. 100: Polishing system 102: Platform assembly 104: Lower platform 106: Upper platform / polishing platform 108: Substrate carrier / carrier head 110: Polishing pad / polishing article 112: Substrate 118: Fluid delivery arm 120: Pad adjustment assembly 122: Adjustment disk 138: Fastener 200: Polishing article 200a: Polishing article 200b: Polishing article 200c: Polishing article 200d: Polishing article 200e: Polishing article 200f: Polishing article 200g: Polishing article 200h: Polishing article 200i: Polishing article 200j: Polishing article 200k: Polishing article 202: Pad body / polishing article body 203: Support Surface 204a: first polishing element 204b: first polishing element 204c: first polishing element 204d: first polishing element 204e: first polishing element 204f: first polishing element 204g: first polishing element 204h: first polishing element 204i: first polishing element 204j: first polishing element 204k: first polishing element 206a: second polishing element 206b: second polishing element 206c: second polishing element 206d: second polishing element 206e: second polishing element 206f: second polishing element 206g: second polishing element 206h: second polishing element 206i: second polishing element 206 j: Second polishing element 206 k: Second polishing element 207: Base 208: Upper surface 209: Top surface / upper surface 210: Height 212: Height 212A: Portion 214: Width 216: Pitch 218: Groove 220: Vertical ridge 222: Vertical recess 223: Collar area 224: Protruding sidewall 225: Hollow area 226: Horizontal ridge 227: Horizontal recess 229: Extension rod portion 300: Print station 302: Support 304A: Reservoir 304B: Reservoir 305: Electronic controller 306A: Printer 306B: Printer 308A: Print head 308B: Print head 309: Nozzle 310 : Nozzle 311: Nozzle 312: Nozzle 320: Curing Device 321: Radiation 343: Distributed Droplets 343A: Droplet Size 346: First Layer 346A: Surface 347: Distributed Droplets 348: Second Layer 348A: Treated Portion 348B: Untreated Portion 349A: Curing Area 350: Lamination System 352: First Porosity Forming Agent / Emulsifier Mixture 353: Precursor Delivery Section 354: Precursor Formulation Section 355: Deposition Section 356: First Curable Precursor Formulation 357: Second Curable Precursor Formulation / Second Precursor 358: Diluent 359: First Printable Resin Precursor Composition365: Second Porosity Forming Agent / Emulsifier Mixture 366: Third Curable Precursor Formulation 367: Fourth Curable Precursor Formulation / Fourth Precursor 368: Diluent 369: Second Printable Resin Precursor Composition 400: Method 405: Operation 410: Operation 500: Method 501: Operation 505: Operation 510: Operation 515: Operation 520: Operation A: Axis B: Axis X: Direction Y: Direction Z: Direction α: Contact Angle A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the accompanying drawings. FIG. 1 shows a schematic cross-sectional view of an illustrative processing system in accordance with an embodiment of the present technology. FIG. 2A is a schematic cross-sectional isometric view of an advanced polishing pad according to an embodiment of the present technology; FIG. 2B is a schematic partial top view of an advanced polishing pad according to an embodiment of the present technology; FIG. 2C is a schematic cross-sectional isometric view of an advanced polishing pad according to an embodiment of the present technology; FIG. 2D is a schematic cross-sectional side view of a portion of an advanced polishing pad according to an embodiment of the present technology; FIG. 2E is a schematic cross-sectional side view of a portion of an advanced polishing pad according to an embodiment of the present technology; 2F through 2K are top views of advanced polishing pad designs according to embodiments of the present technology. FIG. 3A is a schematic diagram of a system for manufacturing advanced polishing pads according to an embodiment of the present technology; FIG3B is a schematic diagram of a portion of the system shown in FIG3A according to an embodiment of the present technology; FIG. 3C is a schematic diagram of dispensed droplets disposed on the surface of an area of ​​an advanced polishing pad according to an embodiment of the present technology; FIG. 4 is a flow chart depicting a method of forming a polishing article according to an embodiment of the present technology. FIG. 5 is a flow chart depicting a method of polishing an article according to an embodiment of the present technology. Several of the figures are included as schematic diagrams. It should be understood that these figures are for illustrative purposes and should not be considered to scale unless specifically indicated as such. Furthermore, as schematic diagrams, these figures are provided to aid understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes. In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished by appending a letter after the reference numeral to distinguish between similar components. If only the first reference numeral is used in the specification, the description applies to any of the similar components having the same first reference numeral, regardless of the letter. Domestic deposit information (please note in the order of deposit organization, date, and number) None Foreign deposit information (please note in the order of deposit country, organization, date, and number) None 200a: polished products 202: Pad body / polishing product body 203: Support surface 204a: first polishing element 206a: Second polishing element 207: base 208: Upper surface 209: Top surface / upper surface 210: Height 212: Height 212A: Part 214: Width 216: Spacing 218: Groove X: direction Y: direction Z: direction

Claims

1. A polished article having a polished surface configured to polish a surface of a substrate having at least one copper feature, the polished article comprising: a plurality of first polishing elements, each of the plurality of first polishing elements comprising a plurality of first polymer layers comprising a first polymer composition, wherein at least one of the plurality of first polymer layers forms the polished surface; and one or more second polishing elements, each of the one or more second polishing elements comprising a plurality of second polymer layers comprising a second polymer composition, wherein at least a region of each of the one or more second polishing elements is disposed between at least one of the plurality of first polishing elements and a support surface of the polished article, wherein at least a portion of the plurality of first polishing elements has a first Shore D hardness greater than 60, and at least a portion of the one or more second polishing elements has a second Shore D hardness of about 20 to about 60, wherein the first Shore D hardness is at least about 5% greater than the second Shore D hardness, and wherein the polished article has a total Shore D hardness greater than or about 50.

2. The polished article as claimed in claim 1, wherein the first Shore D hardness is about 70 to about 90.

3. The polished article as claimed in claim 1, wherein the polished article exhibits a storage modulus (E30) at -30°C, a storage modulus (E90) at -90°C, or both E30 and E90, less than or about 1200 MPa.

4. The polished article as claimed in claim 3, wherein the ratio of the storage modulus (E30) at 30°C to the storage modulus (E90) at 90°C is about 6 to about 30.

5. The polished article as claimed in claim 1, wherein one or more of the plurality of first polishing elements, one or more of the second polishing elements, or a combination thereof, comprises a pore-forming agent.

6. The polished article as claimed in claim 5, wherein the pore-forming agent is dispersed in one or more of the plurality of first polishing elements, one or more of the second polishing elements, or a combination thereof, to provide a porosity of about 1% to about 50% by volume.

7. The polished article as claimed in claim 1, wherein a groove height is defined between a top surface of the plurality of first polishing elements and the one or more second polishing elements, wherein the groove height is less than or about 1000 micrometers.

8. The polished article as claimed in claim 1, wherein a groove width is defined between adjacent first polishing elements in the plurality of first polishing elements, wherein the groove width is less than or about 1000 micrometers.

9. The polished article as claimed in claim 1, wherein at least a portion of the plurality of first polishing elements forms a pattern comprising discrete, spaced-apart pillars, one or more circles around a central axis, one or more spirals, or combinations thereof.

10. A method for forming a polished article as claimed in claim 1, the method comprising the steps of: depositing one or more droplets of a first curable precursor formulation onto a support using a build-up manufacturing system; depositing one or more droplets of a second curable precursor formulation onto the one or more droplets of the first curable precursor formulation using the build-up manufacturing system, wherein the second curable precursor formulation forms at least a portion of a polished surface; and curing the first curable precursor formulation and the second curable precursor formulation.

11. The method of claim 10, wherein the first curable precursor formulation, the second curable precursor formulation, or both the first curable precursor formulation and the second curable precursor formulation comprise a polymer material, wherein the polymer material comprises one or more of the following: polyamide, polycarbonate, polyester, polyether, polyetherketone, polyether, polyoxymethylene, polyether etherimide, polyimide, polyolefin, polysiloxane, polyether, polyphenylene oxide, polyphenylene sulfide, polyurethane, polystyrene, polyacrylonitrile, polyacrylate, polymethyl methacrylate, polyurethane acrylate, polyester acrylate, polyether acrylate, epoxy acrylate, polycarbonate, polyester, melamine, polyether, polyethylene material, acrylonitrile butadiene styrene (ABS), halogenated polymers, block copolymers, and copolymers thereof.

12. The method of claim 11, wherein the polymer material comprises a UV-curable acrylate having one or more of the following: polyester functionality, ethyl carbamate functionality, epoxy functionality, thiol functionality, or a combination thereof.

13. The method of claim 10, wherein the second curable precursor formulation comprises a pattern deposition of discrete, spaced-apart pillars, one or more circles around a central axis, one or more spirals, or a combination thereof.

14. A method of polishing a substrate comprising one or more copper features, the method comprising the steps of: forming a polished article as claimed in claim 1, the polished article having the polished surface configured to polish the substrate comprising the one or more copper features; engaging a support surface of the substrate with a carrier head; polishing one or more materials on a surface of the substrate opposite to the support surface to form a polished surface, wherein the one or more materials comprise one or more copper materials; wherein the polished surface exhibits a recess depth of less than or about 5 nm, a dielectric fillet radius of less than 1.8 nm, a dielectric roughness of less than 0.6 nm, or a combination thereof.

15. The method as described in claim 14, wherein the polished surface exhibits a recess depth of less than or about 3 nm.

16. The method as described in claim 14, wherein the polished surface exhibits a dielectric fillet of less than or about 1 nm.

17. The method as described in claim 14, wherein the method exhibits a barrier protrusion risk of less than or about 50%.

18. The method as described in claim 14, wherein the one or more materials further comprise an oxide, a nitride, a valve metal, or a combination thereof, wherein the removal rate of the one or more copper materials differs from that of the oxide, the valve metal, or the combination thereof by less than or about 20%.

19. The method of claim 14, further comprising the step of bonding a semiconductor component to the polished surface, wherein the component and the substrate exhibit a leakage current of less than or about 5 picoamperes.

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