Cleaning liquid

Abstract

The objective of this invention is to provide a cleaning solution for semiconductor substrates that suppresses pH fluctuations caused by dilution. The cleaning solution of this invention is a cleaning solution for semiconductor substrates containing a chelating agent, and the acid dissociation constant (pKa) of the chelating agent and the pH value of the cleaning solution satisfy the condition of the following formula (A): pKa⁻¹ < pH value < pKa⁺¹ (A)

Description

Cleaning liquid The present invention relates to a cleaning liquid used in the cleaning of a semiconductor substrate. Semiconductor elements such as charge-coupled devices (CCDs) and memories are manufactured by forming fine electronic circuit patterns on a substrate using photolithography technology. Specifically, a resist film is formed on a laminate having a metal film serving as a wiring material, an etching stop layer, and an interlayer insulating layer on the substrate, and a photolithography step and a dry etching step (for example, plasma etching treatment) are performed, thereby manufacturing a semiconductor element. On the substrate that has undergone the dry etching step, dry etching residues (for example, metal components such as titanium-based metals derived from a metal hard mask, or organic components derived from a photoresist film) sometimes remain. In the manufacture of semiconductor elements, chemical mechanical polishing (CMP) treatment is sometimes performed, and in this treatment, a polishing slurry containing polishing fine particles (for example, silicon dioxide, alumina, etc.) is used to planarize the surface of a substrate having a metal wiring film, a barrier metal, and an insulating film, etc. In the CMP treatment, metal components derived from the polishing fine particles used in the CMP treatment, the polished wiring metal film, the barrier metal, etc. are likely to remain on the surface of the polished semiconductor substrate. These residues can cause a short circuit between wirings and affect the electrical characteristics of the semiconductor, so a cleaning step of removing these residues from the surface of the semiconductor substrate is performed. For example, Patent Document 1 describes: a substrate cleaning liquid for a semiconductor device, which contains (A) a chelating agent, (B) a specific diamine compound, and (C) water, and has a pH value of 8 or more and 14 or less. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-139307 [Problems to be Solved by the Invention] The inventors of the present invention studied a cleaning liquid for a semiconductor substrate with reference to Patent Document 1 and the like, and as a result, it was found that: in terms of the cost incurred during raw material, storage, and transportation, and in terms of improving the temporal stability of the residue removal performance, most of these cleaning liquids are manufactured and sold in the form of concentrated liquids with a lower water content ratio than when used, and in order to make a concentration suitable for cleaning the substrate, dilution is carried out using water or the like, and as a result, the pH value of the cleaning liquid fluctuates significantly, thus there is a concern about the deviation of the residue removal performance. The problem of the present invention is to provide a cleaning liquid for a semiconductor substrate in which the change in pH value caused by dilution is suppressed. [Means for Solving the Problems] The inventors of the present invention found that the above problems can be solved by the following configuration. [1] A cleaning liquid, which is a cleaning liquid for semiconductor substrates containing a chelating agent, and the acid dissociation constant (pKa) of the chelating agent and the pH value of the cleaning liquid satisfy the conditions of formula (A) described below. [2] The cleaning liquid according to [1], wherein the chelating agent has at least one ligand selected from a carboxyl group and a phosphonic acid group. [3] The cleaning liquid according to [1] or [2], wherein the chelating agent contains at least one selected from diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, iminodiacetic acid, glycine, β-alanine, arginine, citric acid, tartaric acid, 1-hydroxyethylidene-1,1'-diphosphonic acid, and ethylenediaminetetra(methylenephosphonic acid). [4] The cleaning liquid according to any one of [1] to [3], wherein the cleaning liquid contains two or more chelating agents. [5] The cleaning liquid according to [4], wherein the ratio of the content of one chelating agent to the content of another chelating agent among the two or more chelating agents is 1 to 5000 by mass ratio. [6] The cleaning liquid according to any one of [1] to [5], wherein the content of the chelating agent is 0.01 mass% to 30 mass% relative to the total mass of the cleaning liquid. [7] The cleaning liquid according to any one of [1] to [6], wherein the cleaning liquid further contains at least one component selected from a surfactant and a corrosion inhibitor. [8] The cleaning liquid according to [7], wherein the corrosion inhibitor contains at least one selected from the group consisting of heterocyclic compounds, hydroxylamine compounds, ascorbic acid compounds, and catechol compounds. [9] The cleaning liquid according to [8], wherein the heterocyclic compound contains at least one selected from the group consisting of oxazole compounds, pyridine compounds, pyrazine compounds, pyrimidine compounds, piperazine compounds, and cyclic amidine compounds.

[10] The cleaning liquid according to any one of [7] to [9], wherein the corrosion inhibitor contains at least one selected from the group consisting of hydroxylamine compounds, ascorbic acid compounds, and catechol compounds.

[11] The cleaning liquid according to any one of [1] to

[10] , wherein the cleaning liquid further contains a surfactant and a basic organic compound.

[12] The cleaning liquid according to any one of [7] to

[11] , wherein the surfactant contains an anionic surfactant.

[13] The cleaning liquid according to

[12] , wherein the anionic surfactant contains at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, sulfonic acid surfactants, and carboxylic acid surfactants.

[14] The cleaning liquid according to

[12] or

[13] , wherein the chelating agent contains a carboxylic acid chelating agent having a carboxyl group, and the anionic surfactant contains at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, sulfonic acid surfactants, and carboxylic acid surfactants.

[15] The cleaning liquid as described in

[12] or

[13] , wherein the chelating agent contains a phosphonic acid-based chelating agent having a phosphonic acid group, and the anionic surfactant contains at least one selected from the group consisting of phosphate ester-based surfactants, phosphonic acid-based surfactants, and sulfonic acid-based surfactants.

[16] The cleaning liquid as described in any one of [7] to

[15] , wherein the surfactant contains a nonionic surfactant.

[17] The cleaning liquid as described in any one of [1] to

[10] , wherein the cleaning liquid further contains a pH adjuster.

[18] The cleaning liquid as described in any one of [1] to

[17] , wherein the pH of the cleaning liquid is 7.5 to 12.0 at 25°C.

[19] The cleaning liquid as described in any one of [1] to

[18] , wherein the pH of the cleaning liquid is 8.0 to 12.0 at 25°C.

[20] The cleaning liquid as described in any one of [1] to

[19] , further containing water.

[21] The cleaning liquid as described in any one of [1] to

[20] , wherein the content of the metal contained in the cleaning liquid is 100 mass ppb or less relative to the total mass of the cleaning liquid.

[22] The cleaning liquid as described in any one of [1] to

[21] , wherein the content of particles having a particle diameter of 0.4 μm or more contained in the cleaning liquid is 1000 or less per 1 mL of the cleaning liquid.

[23] The cleaning liquid as described in any one of [1] to

[22] , which is a cleaning liquid used for cleaning a semiconductor substrate subjected to chemical mechanical polishing treatment. [Advantages of the Invention]. According to the present invention, a cleaning liquid for a semiconductor substrate in which a change in pH caused by dilution is suppressed can be provided. Hereinafter, an example of a mode for implementing the present invention will be described. In this specification, a numerical range represented by "~" means a range including the numerical values described before and after "~" as a lower limit value and an upper limit value. In this specification, when there are two or more of a certain component, the "content" of the component means the total content of these two or more components. In this specification, "ppm" means "parts-per-million" (10 -6 ), "ppb" means "parts-per-billion" (10 -9 ), and "ppt" means "parts-per-trillion" (10 -12 ). Among the compounds described in this specification, when not particularly limited, isomers (compounds having the same number of atoms but different structures), optical isomers, and isotopes may be included. In addition, isomers and isotopes may include only one kind or may include multiple kinds. [Cleaning Liquid] The cleaning liquid of the present invention (hereinafter, also simply referred to as "cleaning liquid") is a cleaning liquid for semiconductor substrates containing a chelating agent, and the acid dissociation constant (pKa) of the chelating agent and the pH value of the cleaning liquid satisfy the following condition of formula (A). pKa - 1 < pH value < pKa + 1 (A) By having the above configuration, the cleaning liquid of the present invention can suppress the change in the pH value of the cleaning liquid even when diluted for use or other purposes. As a result, a cleaning liquid can be provided in which the deviation of the residue removal performance caused by the dilution rate is suppressed and the stability of the residue removal performance is excellent. Furthermore, the so-called "cleaning liquid for semiconductor substrates" means it is used in the cleaning of semiconductor substrates. Hereinafter, each component contained in the cleaning liquid will be described. 〔Chelating Agent〕 The chelating agent used in the cleaning liquid is a compound having the following function: in the cleaning step of the semiconductor substrate, it chelates with the metal contained in the residue. Among them, a compound having two or more functional groups (ligands) that coordinate with metal ions in one molecule is preferred. The cleaning liquid of the present invention is characterized in that it contains at least one chelating agent whose pKa satisfies the relationship of the above formula (A) with respect to the pH value of the cleaning liquid. Furthermore, when there are multiple pKa values of the chelating agent, as long as any one of the multiple pKa values satisfies the relationship of the above formula (A) with respect to the pH value of the cleaning liquid. The chelating agent that satisfies the relationship of the above formula (A) can be used alone or in combination of two or more. In addition, a chelating agent that satisfies the relationship of the above formula (A) and a chelating agent that does not satisfy the relationship of the above formula (A) can be used in combination. Examples of the ligand of the chelating agent include an acid group and a cationic group. Examples of the acid group include a carboxyl group, a phosphonic acid group, a sulfo group, and a phenolic hydroxyl group. Examples of the cationic group include an amino group. The chelating agent preferably has an acid group as a ligand, and more preferably has at least one ligand selected from a carboxyl group and a phosphonic acid group. Examples of the chelating agent include organic chelating agents and inorganic chelating agents. Organic chelating agents are chelating agents containing organic compounds, such as carboxylic acid-based chelating agents having a carboxyl group as a ligand and phosphonic acid-based chelating agents having a phosphonic acid group as a ligand. Examples of inorganic chelating agents include condensed phosphoric acid and its salts. As the chelating agent, an organic chelating agent is preferred, and an organic chelating agent having at least one ligand selected from a carboxyl group and a phosphonic acid group is more preferred. As a chelating agent, a chelating agent having a low molecular weight is preferred. The molecular weight of the chelating agent having a low molecular weight is preferably 600 or less, more preferably 450 or less, and still more preferably 300 or less. In addition, when the chelating agent is an organic chelating agent, the number of carbon atoms thereof is preferably 15 or less, more preferably 12 or less, and still more preferably 8 or less. (Carboxylic acid-based chelating agent) A carboxylic acid-based chelating agent is a chelating agent having a carboxyl group as a ligand in the molecule, and examples thereof include: amino polycarboxylic acid-based chelating agents, amino acid-based chelating agents, hydroxycarboxylic acid-based chelating agents, and aliphatic carboxylic acid-based chelating agents. Examples of the amino polycarboxylic acid-based chelating agent include: butanediaminetetraacetic acid, diethylenetriamine pentaacetic acid (DTPA), ethylenediaminetetrapropionic acid, triethylenetetramine hexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N',N'-tetraacetic acid, propanediaminetetraacetic acid, ethylenediamine tetraacetic acid (EDTA), trans-1,2-diaminocyclohexane tetraacetic acid, ethylenediamine diacetic acid, ethylenediamine dipropionic acid, 1,6-hexamethylene-diamine-N,N,N',N'-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropane tetraacetic acid, 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanol tetraacetic acid, (hydroxyethyl)ethylenediamine triacetic acid, and imino diacetic acid (IDA). Among them, diethylenetriamine pentaacetic acid (DTPA), ethylenediamine tetraacetic acid (EDTA), trans-1,2-diaminocyclohexane tetraacetic acid, or imino diacetic acid (IDA) is preferred. As amino acid-based chelating agents, examples include: glycine, serine, alanine, lysine, leucine, isoleucine, cystine, cysteine, ethionine, threonine, tryptophan, tyrosine, valine, histidine, histidine derivatives, asparagine, aspartic acid, glutamine, glutamic acid, arginine, proline, methionine, phenylalanine, the compounds described in paragraphs

[0021] to

[0023] of Japanese Patent Laid-Open No. 2016-086094, and salts thereof. Further, alanine can be either α-alanine (2-aminopropionic acid) or β-alanine (3-aminopropionic acid), and preferably β-alanine. In addition, as histidine derivatives, the compounds described in Japanese Patent Laid-Open No. 2015-165561, Japanese Patent Laid-Open No. 2015-165562, etc. can be cited, and these contents are incorporated into this specification. In addition, as salts, examples include: alkali metal salts such as sodium salts and potassium salts, ammonium salts, carbonates, and acetates, etc. As hydroxycarboxylic acid-based chelating agents, examples include: malic acid, citric acid, glycolic acid, gluconic acid, heptonic acid, tartaric acid, and lactic acid, and preferably citric acid or tartaric acid. As aliphatic carboxylic acid-based chelating agents, examples include: oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, sebacic acid, and maleic acid. As carboxylic acid-based chelating agents, preferably amino polycarboxylic acid-based chelating agents, amino acid-based chelating agents, or hydroxycarboxylic acid-based chelating agents, and more preferably diethylenetriaminepentaacetic acid (DTPA), ethylenediaminetetraacetic acid (EDTA), trans-1,2-diaminocyclohexanetetraacetic acid, iminodiacetic acid (IDA), arginine, glycine, β-alanine, citric acid, tartaric acid, or oxalic acid. (Phosphonic acid-based chelating agents) Phosphonic acid-based chelating agents are chelating agents having at least one phosphonic acid group in the molecule. As phosphonic acid-based chelating agents, examples include the compounds represented by the following general formula [1], general formula [2], and general formula [3]. [Chemical formula 1] In the formula, X represents a hydrogen atom or a hydroxyl group, and R 1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. R in general formula [1] 1 The alkyl group having 1 to 10 carbon atoms represented may be any of linear, branched and cyclic. As R 1 The alkyl group having 1 to 10 carbon atoms represented, for example, may include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, cyclobutyl, n-pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, 2-methylbutyl, 1,2-dimethylpropyl, 1-ethylpropyl, cyclopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, neohexyl, 2-methylpentyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, 1-ethylbutyl, cyclohexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, neoheptyl, cycloheptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, neooctyl, 2-ethylhexyl, cyclooctyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, neononyl, cyclononyl, n-decyl, isodecyl, sec-decyl, tert-decyl, neodecyl, cyclodecyl, bornyl, menthyl group, adamantyl group, and decahydronaphthyl group. As R in the general formula [1] 1 , preferably an alkyl group having 1 to 10 carbon atoms, more preferably methyl, ethyl, n-propyl, or isopropyl. Furthermore, in the specific examples of the alkyl group described in this specification, n- represents the normal form. As X in the general formula [1], preferably a hydroxyl group. As the phosphonic acid-based chelating agent represented by the general formula [1], preferably ethylene diphosphonic acid, 1-hydroxyethylidene-1,1'-diphosphonic acid (HEDP), 1-hydroxypropylidene-1,1'-diphosphonic acid, or 1-hydroxybutylidene-1,1'-diphosphonic acid. [Chemical formula 2] In the formula, Q represents a hydrogen atom or -R 3 -PO 3 H 2 , R 2 and R 3 each independently represents an alkylene group, Y represents a hydrogen atom, -R 3 -PO 3 H 2 , or a group represented by the following general formula [4]. [Chemical 3] In the formula, Q and R 3 are the same as Q and R in General Formula [2]. 3 Same. As R in General Formula [2] 2 The alkylene group represented by, for example, a linear or branched alkylene group having 1 to 12 carbon atoms can be enumerated. More specifically, methylene, ethylene, propylene, trimethylene, ethylmethylene, tetramethylene, 2-methylpropylene, 2-methyltrimethylene, ethyl ethylene, pentamethylene, 2,2-dimethyltrimethylene, 2-ethyltrimethylene, hexamethylene, heptamethylene, octamethylene, 2-ethylhexamethylene, nonamethylene, decamethylene, undecamethylene, and dodecamethylene can be enumerated. As R 2 The alkylene group represented by is preferably a linear or branched alkylene group having 1 to 6 carbon atoms, and more preferably ethylene. As R in General Formula [2] and General Formula [4] 3 The alkylene group represented by can be a linear or branched group having 1 to 10 carbon atoms. More specifically, the alkylene group having 1 to 10 carbon atoms among the linear or branched alkylene groups having 1 to 12 carbon atoms enumerated as the alkylene group represented by the above R can be enumerated. As R 2 The alkylene group represented by is preferably methylene or ethylene, and more preferably methylene. 3 Same. As Q in General Formula [2] and General Formula [4], it is preferably -R 3 -PO 3 H 2 . As Y in General Formula [2], it is preferably -R 3 -PO 3 H 2 or the group represented by General Formula [4], and more preferably the group represented by General Formula [4]. As the phosphonic acid chelating agent represented by the general formula [2], preferably ethylaminobis(methylenephosphonic acid), dodecylaminobis(methylenephosphonic acid), nitrilotris(methylene phosphonic acid) (NTPO), ethylenediamine bis(methylenephosphonic acid) (EDDPO), 1,3 - propylenediamine bis(methylenephosphonic acid), ethylenediamine tetra(methylenephosphonic acid) (EDTPO), ethylenediamine tetra(ethylene phosphonic acid), 1,3 - propylenediamine tetra(methylenephosphonic acid) (PDTMP), 1,2 - diamino propane tetra(methylenephosphonic acid), or 1,6 - hexamethylenediamine tetra(methylenephosphonic acid). [Chemical formula 4] In the formula, R 4 and R 5 each independently represents an alkylene group having 1 to 4 carbon atoms, n represents an integer of 1 to 4, Z 1 ~Z 4 and n Zs 5 at least four of them represent an alkyl group having a phosphonic acid group, and the remaining represent an alkyl group. In the general formula [3], R 4 and R 5 The alkylene group having 1 to 4 carbon atoms represented by can be either linear or branched. As R 4 and R 5 The alkylene group having 1 to 4 carbon atoms represented by, for example, can be listed as: methylene, ethylene, propylene, trimethylene, ethylmethylene, tetramethylene, 2 - methylpropylene, 2 - methyltrimethylene, and ethyl ethylene, preferably ethylene. As n in the general formula [3], preferably 1 or 2. As Z in the general formula [3] 1 ~Z 5The alkyl groups in the alkyl groups represented and the alkyl groups having a phosphonic acid group, for example, may include linear or branched groups having 1 to 4 carbon atoms. More specifically, examples include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and tert-butyl, with methyl being preferred. As Z 1 ~Z 5 The number of phosphonic acid groups in the alkyl groups having a phosphonic acid group represented, is preferably one or two, more preferably one. As Z 1 ~Z 5 The alkyl groups having a phosphonic acid group represented, for example, may include: linear or branched alkyl groups having 1 to 4 carbon atoms and having one or two phosphonic acid groups. More specifically, examples include: (mono)phosphonomethyl, (mono)phosphonoethyl, (mono)phosphono-n-propyl, (mono)phosphonoisopropyl, (mono)phosphono-n-butyl, (mono)phosphonoisobutyl, (mono)phosphono-sec-butyl, (mono)phosphono-tert-butyl, diphosphonomethyl, diphosphonoethyl, diphosphono-n-propyl, diphosphonoisopropyl, diphosphono-n-butyl, diphosphonoisobutyl, diphosphono-sec-butyl, and diphosphono-tert-butyl. Among them, (mono)phosphonomethyl or (mono)phosphonoethyl is preferred, and (mono)phosphonomethyl is more preferred. As Z in the general formula [3] 1 ~Z 5 , preferably Z 1 ~Z 4 And n Z's 5 All are the alkyl groups having a phosphonic acid group. As the phosphonic acid-based chelating agent represented by the general formula [3], preferably diethylenetriamine penta(methylene phosphonic acid) (DEPPO), diethylenetriamine penta(ethylene phosphonic acid), triethylenetetramine hexa(methylene phosphonic acid), or triethylenetetramine hexa(ethylene phosphonic acid). As the phosphonic acid-based chelating agent used in the cleaning liquid, not only the phosphonic acid-based chelating agents represented by the general formula [1], general formula [2] and general formula [3] can be used, but also the compounds described in paragraphs

[0026] to

[0036] of the specification of International Publication No. 2018 / 020878 and the compounds (co)polymers described in paragraphs

[0031] to

[0046] of the specification of International Publication No. 2018 / 030006 can be cited and incorporated into this specification. As the phosphonic acid-based chelating agent used in the cleaning liquid, preferably the compounds listed as preferred specific examples among the phosphonic acid-based chelating agents represented by the general formula [1], general formula [2] and general formula [3], more preferably HEDP, NTPO, EDTPO, or DEPPO, and even more preferably HEDP or EDTPO. Furthermore, one kind of phosphonic acid-based chelating agent can be used alone, or two or more kinds can be used in combination. In addition, among commercially available phosphonic acid-based chelating agents, sometimes in addition to containing the phosphonic acid-based chelating agent, it also contains water such as distilled water, deionized water, and ultrapure water, and there is no problem in using a phosphonic acid-based chelating agent containing such water. Examples of the condensed phosphoric acid and its salts as the inorganic chelating agent include pyrophosphoric acid and its salts, metaphosphoric acid and its salts, tripolyphosphoric acid and its salts, and hexametaphosphoric acid and its salts. The chelating agent is preferably DTPA, EDTA, trans-1,2-diaminocyclohexanetetraacetic acid, IDA, arginine, glycine, β-alanine, citric acid, tartaric acid, oxalic acid, HEDP, NTPO, EDTPO, or DEPPO, more preferably diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, iminodiacetic acid, glycine, β-alanine, arginine, citric acid, tartaric acid, 1-hydroxyethylidene-1,1'-diphosphonic acid (HEDP), or ethylenediaminetetra(methylenephosphonic acid) (EDTPO). One kind of chelating agent can be used alone, or two or more kinds can be used in combination, and it is preferably to use two or more kinds in combination. Among them, more preferably, among two or more chelating agents, one is a carboxylic acid-based chelating agent having a carboxyl group, and the other is a phosphonic acid-based chelating agent having a phosphonic acid group. In addition, as the combination of two or more chelating agents, preferably at least one carboxylic acid-based chelating agent having a carboxyl group selected from arginine, citric acid, and tartaric acid and at least one phosphonic acid-based chelating agent having a phosphonic acid group selected from 1-hydroxyethylidene-1,1'-diphosphonic acid and ethylenediaminetetra(methylenephosphonic acid) are combined. When the cleaning liquid contains two or more chelating agents, the ratio of the content of each chelating agent is not particularly limited. The ratio of the content of one chelating agent to the content of another chelating agent is preferably 1 to 5000, more preferably 1 to 3000, still more preferably 5 to 1000, and particularly preferably 10 to 500 in terms of mass ratio. Furthermore, when the cleaning liquid contains three or more chelating agents, it means that the ratio of the content of two chelating agents among the three or more chelating agents is the above relationship. The content of the chelating agent in the cleaning liquid (the total content in the case of containing two or more chelating agents) is not particularly limited. In terms of more excellent inhibitory performance of pH value change caused by dilution, it is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, still more preferably 0.05% by mass or more relative to the total mass of the cleaning liquid. The upper limit of the content of the chelating agent (the total content in the case of containing two or more chelating agents) is not particularly limited. In terms of excellent temporal stability accompanied by instability of solubility, it is preferably 30% by mass or less, more preferably 20% by mass or less, still more preferably 10% by mass or less relative to the total mass of the cleaning liquid. 〔Water〕The cleaning liquid preferably contains water as a solvent. The type of water used in the cleaning liquid is not particularly limited as long as it does not have an adverse effect on the semiconductor substrate, and distilled water, deionized water, and pure water (ultrapure water) can be used. In terms of containing almost no impurities and having less impact on the semiconductor substrate in the manufacturing steps of the semiconductor substrate, pure water is preferred. In the cleaning liquid, the content of water is not particularly limited, for example, it is 1% by mass to 99% by mass relative to the total mass of the cleaning liquid. 〔Surfactant, Corrosion inhibitor (Component B)〕The cleaning liquid may further contain at least one component selected from surfactants and corrosion inhibitors (hereinafter, also referred to as "Component B") as needed. The surfactants and corrosion inhibitors contained in the cleaning liquid as Component B will be described. (Surfactant) The cleaning liquid may contain a surfactant. As the surfactant, there is no particular limitation as long as it is a compound having a hydrophilic group and a hydrophobic group (lipophilic group) in one molecule. For example, anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants can be mentioned. In terms of more excellent performance in preventing metal corrosion and removing abrasive fine particles, it is preferable that the cleaning liquid contains a surfactant. Most surfactants have a hydrophobic group selected from aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and combinations thereof. There is no particular limitation on the hydrophobic group of the surfactant. When the hydrophobic group contains an aromatic hydrocarbon group, the carbon number of the hydrophobic group containing the aromatic hydrocarbon group is preferably 6 or more, more preferably 10 or more. When the hydrophobic group does not contain an aromatic hydrocarbon group but is composed only of an aliphatic hydrocarbon group, the carbon number of the hydrophobic group is preferably 9 or more, more preferably 13 or more, and even more preferably 16 or more. There is no particular limitation on the upper limit of the carbon number of the hydrophobic group, preferably 20 or less, more preferably 18 or less. - Anionic surfactant - As the anionic surfactant that can be used in the cleaning liquid, for example, the following can be mentioned: phosphate ester surfactants having a phosphate ester group as a hydrophilic group (acid group), phosphonic acid surfactants having a phosphonic acid group as a hydrophilic group (acid group), sulfonic acid surfactants having a sulfo group as a hydrophilic group (acid group), carboxylic acid surfactants having a carboxyl group as a hydrophilic group (acid group), and sulfate ester surfactants having a sulfate ester group as a hydrophilic group (acid group). <Phosphate ester surfactants> As phosphate ester surfactants, for example, the following can be mentioned: phosphate esters (alkyl ether phosphates), polyoxyalkylene ether phosphates, and salts thereof. Phosphate esters and polyoxyalkylene ether phosphates mostly contain both monoesters and diesters, and the monoesters or diesters can be used alone. As salts of phosphate ester surfactants, for example, the following can be mentioned: sodium salts, potassium salts, ammonium salts, and organic amine salts. The monovalent alkyl group of phosphate esters and polyoxyalkylene ether phosphates is not particularly limited, and is preferably an alkyl group having 2 to 24 carbon atoms, more preferably an alkyl group having 6 to 18 carbon atoms. The divalent alkylene group of polyoxyalkylene ether phosphates is not particularly limited, and is preferably an alkylene group having 2 to 6 carbon atoms, more preferably an ethylene group or 1,2-propylene group. In addition, the repeating number of oxyalkylene groups in polyoxyalkylene ether phosphates is preferably 1 to 12, more preferably 1 to 6. As phosphate ester surfactants, octyl phosphate, lauryl phosphate, tridecyl phosphate, polyoxyethylene octyl ether phosphate, polyoxyethylene lauryl ether phosphate, or polyoxyethylene tridecyl ether phosphate is preferred, octyl phosphate, lauryl phosphate, or tridecyl phosphate is more preferred, and lauryl phosphate is even more preferred. In addition, regarding phosphate ester surfactants, in terms of improving hydrophilicity and contributing to improving the wettability of the surface, and thus having excellent detergency, polyoxyethylene octyl ether phosphate, polyoxyethylene lauryl ether phosphate, or polyoxyethylene tridecyl ether phosphate is preferred, and polyoxyethylene lauryl ether phosphate is more preferred. As phosphate ester surfactants, the compounds described in paragraphs

[0012] to

[0019] of Japanese Patent Application Laid-Open No. 2011-40502 can also be cited, and these contents are incorporated into this specification. <Phosphonic acid-based surfactant> As the phosphonic acid-based surfactant, examples include: alkyl phosphonic acid, polyvinyl phosphonic acid, and aminomethyl phosphonic acid described in, for example, Japanese Patent Laid-Open No. 2012-57108, etc. <Sulfonic acid-based surfactant> As the sulfonic acid-based surfactant, examples include: alkyl sulfonic acid, alkyl benzene sulfonic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, alkyl methyl taurine, sulfosuccinic acid diester, polyoxyalkylene alkyl ether sulfonic acid, and salts thereof. The monovalent alkyl group of the sulfonic acid-based surfactant is not particularly limited, preferably an alkyl group having 2 to 24 carbon atoms, more preferably an alkyl group having 6 to 18 carbon atoms. In addition, the divalent alkylene group of the polyoxyalkylene alkyl ether sulfonic acid is not particularly limited, preferably ethylene or 1,2-propylene. In addition, the repeating number of the oxyalkylene group in the polyoxyalkylene alkyl ether sulfonic acid is preferably 1 to 12, more preferably 1 to 6. Specific examples of the sulfonic acid-based surfactant include: hexane sulfonic acid, octane sulfonic acid, decane sulfonic acid, dodecane sulfonic acid, toluene sulfonic acid, cumene sulfonic acid, octyl benzene sulfonic acid, dodecyl benzene sulfonic acid (DBSA), dinitro benzene sulfonic acid (DNBSA), and lauryl dodecyl phenyl ether disulfonic acid (LDPEDSA). Among them, dodecane sulfonic acid, DBSA, DNBSA, or LDPEDSA is preferred, and DBSA, DNBSA, or LDPEDSA is more preferred. <Carboxylic acid-based surfactant> As the carboxylic acid-based surfactant, examples include: alkyl carboxylic acid, alkyl benzene carboxylic acid, polyoxyalkylene alkyl ether carboxylic acid, and salts thereof. The monovalent alkyl group of the carboxylic acid-based surfactant is not particularly limited, preferably an alkyl group having 7 to 25 carbon atoms, more preferably an alkyl group having 11 to 17 carbon atoms. In addition, the divalent alkylene group of the polyoxyalkylene alkyl ether carboxylic acid is not particularly limited, preferably ethylene or 1,2-propylene. In addition, the repeating number of the oxyalkylene group in the polyoxyalkylene alkyl ether carboxylic acid is preferably 1 to 12, more preferably 1 to 6. Specific examples of the carboxylic acid-based surfactant include: lauric acid, myristic acid, palmitic acid, stearic acid, polyoxyethylene lauryl ether acetic acid, and polyoxyethylene tridecyl ether acetic acid. <Sulfate surfactants> As sulfate surfactants, examples include: sulfates (alkyl ether sulfates), polyoxyalkylene ether sulfates, and salts thereof. The monovalent alkyl groups of sulfates and polyoxyalkylene ether sulfates are not particularly limited, and are preferably alkyl groups having 2 to 24 carbon atoms, more preferably alkyl groups having 6 to 18 carbon atoms. The divalent alkylene groups of polyoxyalkylene ether sulfates are not particularly limited, and are preferably ethylene or 1,2-propylene. In addition, the repeating number of oxyalkylene groups in polyoxyalkylene ether sulfates is preferably 1 to 12, more preferably 1 to 6. Specific examples of sulfate surfactants include: lauryl sulfate, myristyl sulfate, and polyoxyethylene lauryl ether sulfate. -Cationic surfactants- As cationic surfactants, examples include: primary alkylamine salts to tertiary alkylamine salts (for example, monostearyl ammonium chloride, distearyl ammonium chloride, and tristearyl ammonium chloride, etc.), and modified aliphatic polyamines (for example, polyethylenepolyamines, etc.). -Nonionic surfactants- As nonionic surfactants, examples include: polyoxyalkylene alkyl ethers (for example, polyoxyethylene stearyl ether, etc.), polyoxyalkylene alkenyl ethers (for example, polyoxyethylene oleyl ether, etc.), polyoxyethylene alkyl phenyl ethers (for example, polyoxyethylene nonyl phenyl ether, etc.), polyoxyalkylene diols (for example, polyoxypropylene polyoxyethylene diol, etc.), polyoxyalkylene monoalkylates (monoalkyl fatty acid ester polyoxyalkylene) (for example, polyoxyethylene monostearate, and polyoxyethylene monooleate, etc., polyoxyethylene monoalkylates), polyoxyalkylene dialkylates (dialkyl fatty acid ester polyoxyalkylene) (for example, polyoxyethylene distearate, and polyoxyethylene dioleate, etc., polyoxyethylene dialkylates), bispolyoxyalkylene alkylamides (for example, bispolyoxyethylene stearylamide, etc.), sorbitan fatty acid esters, polyoxyethylene sorbitan fatty acid esters, polyoxyethylene alkylamines, glycerol fatty acid esters, oxyethylene oxypropylene block copolymers, acetylene glycol-based surfactants, and acetylene-based polyoxyethylene oxides. Among them, polyoxyethylene monoalkylates or polyoxyethylene dialkylates are preferred, and polyoxyethylene dialkylates are more preferred. -Amphoteric surfactants- As amphoteric surfactants, examples include: carboxybetaines (for example, alkyl-N,N-dimethylaminoacetic acid betaines and alkyl-N,N-dihydroxyethylaminoacetic acid betaines, etc.), sulfobetaines (for example, alkyl-N,N-dimethylsulfonioethylammonium betaines, etc.), imidazolium betaines (for example, 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolium betaines, etc.), and alkylamine oxides (for example, N,N-dimethylalkylamine oxides, etc.). As the surfactant, the compounds described in paragraphs

[0092] to

[0096] of Japanese Patent Laid-Open No. 2015-158662, paragraphs

[0045] to

[0046] of Japanese Patent Laid-Open No. 2012-151273, and paragraphs

[0014] to

[0020] of Japanese Patent Laid-Open No. 2009-147389 can also be cited, and these contents are incorporated into this specification. The cleaning liquid preferably contains an anionic surfactant. One kind of anionic surfactant can be used alone, or two or more kinds can be used in combination. As the anionic surfactant, at least one selected from the group consisting of phosphate ester surfactants, sulfonic acid surfactants, phosphonic acid surfactants, and carboxylic acid surfactants is preferred. When the chelating agent is a carboxylic acid chelating agent, the anionic surfactant is preferably at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, sulfonic acid surfactants, and carboxylic acid surfactants. In addition, when the chelating agent is a phosphonic acid chelating agent, the anionic surfactant is preferably at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, and sulfonic acid surfactants. As the anionic surfactant, it is more preferably to contain a phosphate ester surfactant or a sulfonic acid surfactant, and even more preferably to contain a phosphate ester surfactant. These surfactants can be used alone or in combination of two or more. When the cleaning liquid contains a surfactant, its content (total content in the case of two or more) is preferably 0.001% by mass to 1% by mass, more preferably 0.001% by mass to 0.5% by mass, and even more preferably 0.003% by mass to 0.5% by mass, relative to the total mass of the cleaning liquid. Furthermore, as these surfactants, commercially available surfactants can be used. (Corrosion inhibitor) The cleaning liquid may also contain a corrosion inhibitor. Furthermore, in this specification, the corrosion inhibitor is a compound not included in the chelating agent and the surfactant. There is no particular limitation on the corrosion inhibitor that can be used in the cleaning liquid. For example, heterocyclic compounds having a heterocyclic structure in the molecule, hydroxylamine compounds, ascorbic acid, and catechol compounds can be cited. -Heterocyclic compounds- The cleaning liquid can contain a heterocyclic compound as a corrosion inhibitor. The heterocyclic compound is a compound having a heterocyclic structure in the molecule. The heterocyclic structure of the heterocyclic compound is not particularly limited. For example, a heterocyclic ring (nitrogen-containing heterocyclic ring) in which at least one of the atoms constituting the ring is a nitrogen atom can be cited. As the heterocyclic compound having a nitrogen-containing heterocyclic ring, for example, azole compounds, pyridine compounds, pyrazine compounds, pyrimidine compounds, piperazine compounds, and cyclic amidine compounds can be cited. A唑compound is a compound containing a hetero five-membered ring containing at least one nitrogen atom and having aromaticity. The number of nitrogen atoms contained in the hetero five-membered ring of the唑compound is not particularly limited, preferably 1 to 4, more preferably 1 to 3. In addition, the唑compound may have a substituent on the hetero five-membered ring. Examples of such a substituent include: a hydroxyl group, a carboxyl group, a mercapto group, an amino group, an alkyl group having 1 to 4 carbon atoms that may have an amino group, and a 2-imidazolyl group. Examples of the唑compound include: an imidazole compound in which one of the atoms constituting the唑ring is a nitrogen atom, a pyrazole compound in which two of the atoms constituting the唑ring are nitrogen atoms, a thiazole compound in which one of the atoms constituting the唑ring is a nitrogen atom and the other is a sulfur atom, a triazole compound in which three of the atoms constituting the唑ring are nitrogen atoms, and a tetrazole compound in which four of the atoms constituting the唑ring are nitrogen atoms. Examples of the imidazole compound include: imidazole, 1-methylimidazole, 2-methylimidazole, 5-methylimidazole, 1,2-dimethylimidazole, 2-mercaptoimidazole, 4,5-dimethyl-2-mercaptoimidazole, 4-hydroxyimidazole, 2,2'-biimidazole, 4-imidazolecarboxylic acid, histamine, and benzimidazole. Examples of the pyrazole compound include: pyrazole, 4-pyrazolecarboxylic acid, 1-methylpyrazole, 3-methylpyrazole, 3-amino-5-hydroxypyrazole, 3-aminopyrazole, and 4-aminopyrazole. Examples of the thiazole compound include: 2,4-dimethylthiazole, benzothiazole, and 2-mercaptobenzothiazole. Examples of the triazole compound include: 1,2,4-triazole, 3-methyl-1,2,4-triazole, 3-amino-1,2,4-triazole, 1,2,3-triazole, 1-methyl-1,2,3-triazole, benzotriazole, 1-hydroxybenzotriazole, 1-dihydroxypropylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxybenzotriazole, and 5-methylbenzotriazole. Examples of the tetrazole compound include: 1H-tetrazole (1,2,3,4-tetrazole), 5-methyl-1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, and 1-(2-dimethylaminoethyl)-5-mercaptotetrazole. As the唑compound, a triazole compound or a tetrazole compound is preferred, and 1,2,4-triazole, 5-aminotetrazole, or 1H-tetrazole is more preferred. A pyridine compound is a compound containing a hetero six-membered ring (pyridine ring) containing one nitrogen atom and having aromaticity. The pyridine compound may have a substituent on the pyridine ring. Examples of such a substituent include: a hydroxyl group, an amino group, a cyano group, an alkyl group having 1 to 4 carbon atoms, and an alkylamide group having 1 to 4 carbon atoms. As pyridine compounds, for example, pyridine, 3-aminopyridine, 4-aminopyridine, 3-hydroxypyridine, 4-hydroxypyridine, 2-acetamidopyridine, 2-cyanopyridine, 2-carboxypyridine, and 4-carboxypyridine can be mentioned. A pyrazine compound is a compound containing a hetero six-membered ring (pyrazine ring) having aromaticity and containing two nitrogen atoms located at the para position, and a pyrimidine compound is a compound containing a hetero six-membered ring (pyrimidine ring) having aromaticity and containing two nitrogen atoms located at the meta position. The pyrazine compound and the pyrimidine compound may have a substituent on the ring. As such a substituent, for example, a hydroxyl group, an amino group, a carboxyl group, and an alkyl group having 1 to 4 carbon atoms which may have a hydroxyl group can be mentioned. As pyrazine compounds, for example, pyrazine, 2-methylpyrazine, 2,5-dimethylpyrazine, 2,3,5-trimethylpyrazine, 2,3,5,6-tetramethylpyrazine, 2-ethyl-3-methylpyrazine, and 2-amino-5-methylpyrazine can be mentioned, and pyrazine is preferred. As pyrimidine compounds, for example, pyrimidine, 2-methylpyrimidine, 2-aminopyrimidine, and 4,6-dimethylpyrimidine can be mentioned, and 2-aminopyrimidine is preferred. A piperazine compound is a compound having a hetero six-membered ring (piperazine ring) formed by substituting the opposite -CH- groups of a cyclohexane ring with nitrogen atoms. In terms of excellent storage stability of the cleaning liquid, a piperazine compound is preferred. The piperazine compound may have a substituent on the piperazine ring. As such a substituent, for example, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms which may have a hydroxyl group, and an aryl group having 6 to 10 carbon atoms can be mentioned. As piperazine compounds, for example, piperazine, 1-methylpiperazine, 1-ethylpiperazine, 1-propylpiperazine, 1-butylpiperazine, 2-methylpiperazine, 1,4-dimethylpiperazine, 2,5-dimethylpiperazine, 2,6-dimethylpiperazine, 1-phenylpiperazine, 2-hydroxypiperazine, 2-hydroxymethylpiperazine, 1-(2-hydroxyethyl)piperazine (1-(2-hydroxyethyl)piperazine, HEP), and 1,4-bis(3-aminopropyl)piperazine (1,4-Bis(3-aminopropyl)piperazine, BAP) can be mentioned, and piperazine, 1-methylpiperazine, 2-methylpiperazine, HEP, or BAP is preferred, and HEP or BAP is more preferred. A cyclic amidine compound is a compound having a heterocyclic ring containing an amidine structure (>N-C=N-) in the ring. The number of ring members of the heterocyclic ring possessed by the cyclic amidine compound is not particularly limited, and 5 or 6 is preferred, and 6 is more preferred. The cyclic amidine compound may have a substituent on the heterocyclic ring. As such a substituent, an amino group, a side oxygen group, and an alkyl group having 1 to 4 carbon atoms can be mentioned. In addition, two substituents on the heterocyclic ring may be bonded to each other to form a divalent linking group (preferably an alkylene group having 3 to 6 carbon atoms). As cyclic amidine compounds, examples include: diazabicycloundecene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU), diazabicyclononene (1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 3,4,6,7,8,9,10,11-octahydro-2H-pyrimido[1.2-a]azocin, 3,4,6,7,8,9-hexahydro-2H-pyrido[1.2-a]pyrimidine, 2,5,6,7-tetrahydro-3H-pyrrolo[1.2-a]imidazole, 3-ethyl-2,3,4,6,7,8,9,10-octahydropyrimido[1.2-a]azepine, and creatinine. Preferably, it is DBU or DBN. As heterocyclic compounds, in addition to the above, examples include: compounds having a non-aromatic heteropentacyclic ring such as 1,3-dimethyl-2-imidazolidinone and imidazolidinethione, and compounds having a seven-membered ring containing a nitrogen atom. As compounds having a seven-membered ring containing a nitrogen atom, examples include: hexahydro-1H-1,4-diazepine, 1-methylhexahydro-1H-1,4-diazepine, 2-methylhexahydro-1H-1,4-diazepine, 6-methylhexahydro-1H-1,4-diazepine, 2,7-diazabicyclo[3.2.1]octane, and 1,3-diazabicyclo[3.2.2]nonane. - Hydroxylamine compound - The cleaning solution may also contain a hydroxylamine compound as a corrosion inhibitor. The hydroxylamine compound refers to at least one selected from the group consisting of hydroxylamine (NH 2 OH), hydroxylamine derivatives, and salts thereof. In addition, the so-called hydroxylamine derivative refers to a compound in which at least one organic group in hydroxylamine (NH 2 OH) is substituted. The salt of hydroxylamine or a hydroxylamine derivative can be an inorganic acid salt or an organic acid salt of hydroxylamine or a hydroxylamine derivative. As the salt of hydroxylamine or a hydroxylamine derivative, an inorganic acid salt is preferred, and the inorganic acid is formed by bonding at least one non-metal selected from the group consisting of Cl, S, N, and P to hydrogen. More preferably, it is a hydrochloride, a sulfate, or a nitrate. As a hydroxylamine compound, for example, the compound represented by the general formula (5) can be cited. [Chemical formula 5] In the formula, R 6 and R 7 Each independently represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. R 6 and R 7 The alkyl group having 1 to 6 carbon atoms represented by can be any of linear, branched, and cyclic, and examples thereof include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, cyclobutyl, n-pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, 2-methylbutyl, 1,2-dimethylpropyl, 1-ethylpropyl, cyclopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, neohexyl, 2-methylpentyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, 1-ethylbutyl, and cyclohexyl. As R in the general formula (5) 6 and R 7 , it is preferably an alkyl group having 1 to 6 carbon atoms, more preferably ethyl or n-propyl, and still more preferably ethyl. As hydroxylamine compounds, examples include: hydroxylamine, N-methylhydroxylamine, N,N-dimethylhydroxylamine, N-ethylhydroxylamine, N,N-diethylhydroxylamine (DEHA), N-n-propylhydroxylamine, N,N-di-n-propylhydroxylamine, N-isopropylhydroxylamine, N,N-diisopropylhydroxylamine, N-n-butylhydroxylamine, N,N-di-n-butylhydroxylamine, N-isobutylhydroxylamine, N,N-diisobutylhydroxylamine, N-sec-butylhydroxylamine, N,N-di-sec-butylhydroxylamine, N-tert-butylhydroxylamine, N,N-di-tert-butylhydroxylamine, N-cyclobutylhydroxylamine, N,N-dicyclobutylhydroxylamine, N-n-pentylhydroxylamine, N,N-di-n-pentylhydroxylamine, N-isopentylhydroxylamine, N,N-diisopentylhydroxylamine, N-sec-pentylhydroxylamine, N,N-di-sec-pentylhydroxylamine, N-tert-pentylhydroxylamine, N,N-di-tert-pentylhydroxylamine, N-neopentylhydroxylamine, N,N-dineopentylhydroxylamine, N-2-methylbutylhydroxylamine, N,N-bis(2-methylbutyl)hydroxylamine, N-1,2-dimethylpropylhydroxylamine, N,N-bis(1,2-dimethylpropyl)hydroxylamine, N-1-ethylpropylhydroxylamine, N,N-bis(1-ethylpropyl)hydroxylamine, N-cyclopentylhydroxylamine, N,N-dicyclopentylhydroxylamine, N-n-hexylhydroxylamine, N,N-di-n-hexylhydroxylamine, N-isohexylhydroxylamine, N,N-diisohexylhydroxylamine, N-sec-hexylhydroxylamine, N,N-di-sec-hexylhydroxylamine, N-tert-hexylhydroxylamine, N,N-di-tert-hexylhydroxylamine, N-neohexylhydroxylamine, N,N-dineohexylhydroxylamine, N-2-methylpentylhydroxylamine, N,N-bis(2-methylpentyl)hydroxylamine, N-1,2-dimethylbutylhydroxylamine, N,N-bis(1,2-dimethylbutyl)hydroxylamine, N-2,3-dimethylbutylhydroxylamine, N,N-bis(2,3-dimethylbutyl)hydroxylamine, N-1-ethylbutylhydroxylamine, N,N-bis(1-ethylbutyl)hydroxylamine, N-cyclohexylhydroxylamine, and N,N-dicyclohexylhydroxylamine. Among them, N-ethylhydroxylamine, DEHA, or N-n-propylhydroxylamine is preferred, and DEHA is more preferred. The hydroxylamine compound can be used alone or in combination of two or more. In addition, the hydroxylamine compound can be a commercially available compound or a compound appropriately synthesized by a known method. - Ascorbic acid compound - The cleaning solution may also contain an ascorbic acid compound as a corrosion inhibitor. The ascorbic acid compound refers to at least one selected from the group consisting of ascorbic acid, ascorbic acid derivatives, and salts thereof. Examples of ascorbic acid derivatives include ascorbic acid phosphate and ascorbic acid sulfate. - Catechol Compounds - The cleaning solution may also contain catechol compounds as corrosion inhibitors. Catechol compounds refer to at least one selected from the group consisting of pyrocatechol (benzene-1,2-diol) and catechol derivatives. The so-called catechol derivatives refer to compounds in which at least one substituent in pyrocatechol is substituted. Examples of the substituents of catechol derivatives include: hydroxyl group, carboxyl group, carboxylate group, sulfo group, sulfonate group, alkyl group (preferably an alkyl group having 1 to 6 carbon atoms, more preferably an alkyl group having 1 to 4 carbon atoms), and aryl group (preferably a phenyl group). The carboxyl group and sulfo group of catechol derivatives in the form of substituents may also be salts with cations. In addition, the alkyl group and aryl group of catechol derivatives in the form of substituents may further have substituents. Examples of catechol compounds include, for example: pyrocatechol, 4-tert-butylcatechol, gallic acid, methyl gallate, 1,2,4-benzenetriol, and tiron. The cleaning solution may also use heterocyclic compounds, hydroxylamine compounds, ascorbic acid, and other corrosion inhibitors other than catechol compounds as corrosion inhibitors. Examples of other corrosion inhibitors include: sugars such as fructose, glucose, and ribose; polyhydric alcohols such as ethylene glycol, propylene glycol, and glycerol; polycarboxylic acids such as polyacrylic acid, polymaleic acid, and copolymers thereof; polyvinylpyrrolidone, cyanuric acid, barbituric acid and its derivatives, glucuronic acid, squaric acid, α-keto acid, adenosine and its derivatives, purine compounds and their derivatives, phenanthroline, ascorbic acid, resorcinol, hydroquinone, nicotinamide and its derivatives, flavonol and its derivatives, anthocyanin and its derivatives, and combinations thereof. As the corrosion inhibitor, heterocyclic compounds, hydroxylamine compounds, ascorbic acid, or catechol are preferred, heterocyclic compounds or hydroxylamine compounds are more preferred, azole compounds, pyrimidine compounds, piperazine compounds, cyclic amidine compounds, or hydroxylamine compounds are further preferred, and triazole compounds, tetrazole compounds, pyrimidine compounds, piperazine compounds, cyclic amidine compounds, or hydroxylamine compounds are particularly preferred. The corrosion inhibitor may be used alone or in combination of two or more. When the cleaning solution contains a corrosion inhibitor, its content is preferably 0.01% by mass to 10% by mass, more preferably 0.05% by mass to 5% by mass, and further preferably 0.1% by mass to 3% by mass based on the total mass of the cleaning solution. In terms of excellent residue removal performance, the cleaning liquid preferably contains Component B. Among them, in terms of excellent defect suppression performance with respect to the cobalt-containing film on the semiconductor substrate, the cleaning liquid more preferably contains both a surfactant and a corrosion inhibitor as Component B. Relative to the total mass of the cleaning liquid, the content of Component B in the cleaning liquid (total content of the surfactant and the corrosion inhibitor) is preferably 0.011% by mass to 11% by mass, more preferably 0.051% by mass to 5.2% by mass, and even more preferably 0.08% by mass to 4.5% by mass. In addition, in terms of excellent coexistence of corrosion resistance and detergency, the ratio of Component B to the content of the chelating agent is preferably 0.01 to 3000, more preferably 0.1 to 400, and even more preferably 1 to 50 in terms of mass ratio. 〔pH Adjusting Agent〕 In order to adjust and maintain the pH value of the cleaning liquid, the cleaning liquid may also contain a pH adjusting agent. As the pH adjusting agent, alkaline compounds and acidic compounds other than the above components can be cited. (Alkaline Compound) As the alkaline compound, alkaline organic compounds and alkaline inorganic compounds can be cited. -Alkaline Organic Compound- As the alkaline organic compound, for example, quaternary ammonium compounds, monoamine compounds, and diamine compounds can be used. Furthermore, the quaternary ammonium compounds, monoamine compounds, and diamine compounds included as the alkaline organic compound are different compounds from the above-mentioned heterocyclic compounds having a nitrogen-containing heterocycle and hydroxylamine compounds. <Quaternary Ammonium Compound> The quaternary ammonium compound is not particularly limited as long as it is a compound having a quaternary ammonium cation in which four hydrocarbon groups (preferably alkyl groups) substitute for the nitrogen atom. As the quaternary ammonium compound, for example, quaternary ammonium hydroxide, quaternary ammonium fluoride, quaternary ammonium bromide, quaternary ammonium iodide, acetate of quaternary ammonium, and carbonate of quaternary ammonium can be cited, and quaternary ammonium hydroxide is preferred. As the quaternary ammonium compound, the compound represented by the following general formula (6) can be cited. (R 8 ) 4 N + OH - (6) In the formula, R 8 represents an alkyl group which may have a hydroxyl group or a phenyl group as a substituent. The four Rs 8 may be the same as or different from each other. As R 8The alkyl group represented is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group. As R 8 The alkyl group which may have a hydroxyl group or a phenyl group represented is preferably a methyl group, an ethyl group, a propyl group, a butyl group, 2-hydroxyethyl group, or a benzyl group, more preferably a methyl group, an ethyl group, a propyl group, a butyl group, or 2-hydroxyethyl group, still more preferably a methyl group, an ethyl group, or 2-hydroxyethyl group. Examples of the quaternary ammonium compound include: tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), 2-hydroxyethyltrimethylammonium hydroxide (choline), bis(2-hydroxyethyl)dimethylammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tetra(2-hydroxyethyl)ammonium hydroxide, benzyltrimethylammonium hydroxide (BTMAH), and cetyltrimethylammonium hydroxide. As the quaternary ammonium compound other than the above specific examples, for example, the compounds described in paragraph

[0021] of Japanese Patent Laid-Open No. 2018-107353 can be cited, and the content thereof is incorporated into this specification. As the quaternary ammonium compound used in the cleaning liquid, a compound other than TMAH among the above quaternary ammonium compounds is preferred, more preferably choline, TEAH, TPAH, TBAH, or bis(2-hydroxyethyl)dimethylammonium hydroxide, still more preferably TBAH. When the cleaning liquid contains a quaternary ammonium compound as a pH adjuster, its content is preferably 0.05% by mass to 10% by mass, more preferably 0.1% by mass to 5% by mass, based on the total mass of the cleaning liquid. <Monoamine compound, diamine compound> Examples of the monoamine compound and diamine compound include: alkanolamines having at least one hydroxyalkyl group in the molecule, and monoamine compounds and diamine compounds having at least one alkyl group in the molecule and not having a hydroxyalkyl group and a nitrogen-containing ring. Examples of the alkanolamine include monoethanolamine, 2-amino-2-methyl-1-propanol (AMP), diethanolamine, triethanolamine, diethylene glycol amine, trishydroxy methyl amino methane (Tris), dimethyl bis(2-hydroxyethyl)ammonium hydroxide (AH212), 2-(2-hydroxyethyl)ethanol (AEE), and 2-(2-aminoethylamino)ethanol. In terms of excellent defect suppression performance with respect to the copper-containing film and the tungsten-containing film, the cleaning liquid preferably contains an alkanolamine. Examples of the monoamine compound and the diamine compound other than the alkanolamine include ethylamine, benzylamine, diethylamine, n-butylamine, 3-methoxypropylamine, tert-butylamine, n-hexylamine, cyclohexylamine, n-octylamine, 2-ethylhexylamine, and 4-(2-aminoethyl)morpholine (AEM). In addition, as the monoamine compound, the compounds described in paragraphs

[0034] to

[0056] of the specification of International Publication No. 2013 / 162020 can be cited, and the content thereof is incorporated into this specification. When the cleaning liquid contains the monoamine compound and the diamine compound as the pH adjuster, the content is preferably 0.05% by mass to 15% by mass, more preferably 0.5% by mass to 12% by mass, based on the total mass of the cleaning liquid. In addition, regarding the pH adjuster as the basic organic compound, the heterocyclic compound having a nitrogen-containing heterocycle listed as the anticorrosive can also be used for adjusting the pH of the cleaning liquid. That is, the heterocyclic compound having a nitrogen-containing heterocycle can have a function of a pH adjuster while having a function of an anticorrosive. In terms of excellent storage stability of the cleaning liquid, the cleaning liquid preferably contains a basic organic compound or a piperazine compound as the pH adjuster or as a compound having a function of a pH adjuster, as compared with the cyclic amidine compound. Among them, more preferably a quaternary ammonium compound, a monoamine compound, or a diamine compound, and still more preferably an alkanolamine. In terms of more excellent defect suppression performance with respect to the copper-containing film and the cobalt-containing film, the cleaning liquid preferably further contains both a surfactant and a basic organic compound in addition to the chelating agent. Among them, as the basic organic compound, a quaternary ammonium compound, a monoamine compound, or a diamine compound is preferable, a quaternary ammonium compound or an alkanolamine is more preferable, and an alkanolamine is still more preferable. - Basic inorganic compound - As the basic inorganic compound, for example, the following can be mentioned: alkali metal hydroxides, alkaline earth metal hydroxides, and ammonia. As the alkali metal hydroxides, for example, the following can be mentioned: lithium hydroxide, sodium hydroxide, potassium hydroxide, and cesium hydroxide. As the alkaline earth metal hydroxides, for example, the following can be mentioned: calcium hydroxide, strontium hydroxide, and barium hydroxide. When the cleaning liquid contains a basic inorganic compound as a pH adjuster, its content is preferably 0.03% by mass to 15% by mass, more preferably 0.1% by mass to 13% by mass, based on the total mass of the cleaning liquid. The cleaning liquid may also contain at least one selected from the group consisting of nitro compounds, nitroso compounds, oxime compounds, ketoxime compounds, aldoxime compounds, nitrone compounds, lactam compounds, isocyanide compounds, carbohydrazide compounds such as carbohydrazide, and urea as a basic compound other than the above-mentioned compounds. As the basic compound, in terms of not containing metal ions and not easily having an adverse effect on the electrical characteristics of the semiconductor device, the quaternary ammonium compound or the monoamine compound is preferred. These basic compounds can be commercially available compounds or compounds appropriately synthesized by known methods. (Acidic compound) The cleaning liquid may also contain an acidic compound as a pH adjuster. The acidic compound can be an inorganic acid or an organic acid. As the inorganic acid, for example, the following can be mentioned: hydrochloric acid, sulfuric acid, sulfurous acid, nitric acid, nitrous acid, phosphoric acid, boric acid, and hexafluorophosphoric acid. In addition, salts of inorganic acids can also be used. For example, ammonium salts of inorganic acids can be mentioned. More specifically, the following can be mentioned: ammonium chloride, ammonium sulfate, ammonium sulfite, ammonium nitrate, ammonium nitrite, ammonium phosphate, ammonium borate, and ammonium hexafluorophosphate. As the inorganic acid, phosphoric acid or phosphate is preferred, and phosphoric acid is more preferred. The organic acid is an organic compound having an acidic functional group and showing acidity (pH value less than 7.0) in an aqueous solution, and is a compound not included in any of the above-mentioned chelating agents and corrosion inhibitors. For example, the following can be mentioned: lower (carbon number 1 to 4) aliphatic monocarboxylic acids such as formic acid, acetic acid, propionic acid, and butyric acid. As the acidic compound, if it is a compound that becomes an acid or an acid radical ion (anion) in an aqueous solution, a salt of the acidic compound can also be used. In addition, the acidic compound can be a commercially available compound or a compound appropriately synthesized by known methods. The pH adjuster can be used alone or in combination of two or more. When the cleaning liquid contains a pH adjuster, its content can be selected according to the types and amounts of other components and the pH value of the target cleaning liquid. Preferably, it is 0.03% by mass to 15% by mass, more preferably 0.1% by mass to 13% by mass, based on the total mass of the cleaning liquid. 〔Additive〕 The cleaning liquid may also contain additives other than the above components as needed. Examples of such additives include polymers, fluorine compounds, and organic solvents. Examples of the polymer include the water-soluble polymers described in paragraphs

[0043] to

[0047] of Japanese Patent Application Laid-Open No. 2016-171294, the content of which is incorporated herein. Examples of the fluorine compound include the compounds described in paragraphs

[0013] to

[0015] of Japanese Patent Application Laid-Open No. 2005-150236, the content of which is incorporated herein. As the organic solvent, any known organic solvent can be used, preferably hydrophilic organic solvents such as alcohols and ketones. The organic solvent can be used alone or in combination of two or more. The usage amounts of the polymer, fluorine compound, and organic solvent are not particularly limited and can be appropriately set within the range that does not hinder the effects of the present invention. In terms of further suppressing the influence on the metals of the respective layers forming the semiconductor substrate, the cleaning liquid preferably does not contain other components other than the chelating agent, component B, pH adjuster, and water. Furthermore, the so-called "does not contain other components" means that other components are below the detection limit, or even when other components are contained, their contents are trace amounts that do not cause adverse effects on the semiconductor substrate to be cleaned. Furthermore, the contents of the respective components in the cleaning liquid can be measured by known methods such as gas chromatography-mass spectrometry (GC-MS), liquid chromatography-mass spectrometry (LC-MS), and ion-exchange chromatography (IC). [Physical properties of cleaning liquid] 〔pH value〕 The pH value of the cleaning liquid of the present invention and the pKa of the chelating agent contained in the cleaning liquid satisfy the relationship of the formula (A). In terms of more excellent residue removal performance, the pH value of the cleaning liquid is preferably 7.5 or more, more preferably 8.0 or more at 25°C. The upper limit of the pH value of the cleaning liquid is preferably 13.0 or less, more preferably 12.0 or less, and further preferably 11.5 or less at 25°C. The pH value of the cleaning liquid can be adjusted by using a compound selected from the above-mentioned pH adjuster and the corrosion inhibitor having the function of the pH adjuster. Furthermore, the pH value of the cleaning liquid can be measured using a known pH meter and the method based on Japanese Industrial Standards (JIS) Z8802-1984. 〔Metal content〕 In the cleaning liquid, the content of metals (metal elements of Fe, Co, Na, K, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn) contained as impurities in the liquid (measured as ion concentration) is preferably 5 mass ppm or less, more preferably 1 mass ppm or less. Since it is envisaged that a cleaning liquid with higher purity is required in the manufacture of the most advanced semiconductor components, the metal content is further preferably a value lower than 1 mass ppm, that is, at the mass ppb level or less, and particularly preferably 100 mass ppb or less. The lower limit is not particularly limited, and preferably 0. As a method for reducing the metal content, for example, distillation and purification treatments such as filtration using an ion exchange resin or a filter can be carried out at the stage of raw materials used in the manufacture of the cleaning liquid or after the manufacture of the cleaning liquid. As other methods for reducing the metal content, using a container with less elution of impurities described below as a container for accommodating raw materials or the manufactured cleaning liquid can be cited. In addition, lining the inner wall of the pipe with a fluorine-based resin so that metal components do not elute from the pipe or the like during the manufacture of the cleaning liquid can also be cited. [Coarse Particles] The cleaning liquid may also contain coarse particles, but the content thereof is preferably low. Herein, the so-called coarse particles refer to particles having a diameter (particle size) of 0.4 μm or more when the shape of the particles is regarded as a sphere. As the content of coarse particles in the cleaning liquid, the content of particles having a diameter of 0.4 μm or more is preferably 1000 or less per 1 mL of the cleaning liquid, more preferably 500 or less. The lower limit is not particularly limited, and 0 can be cited. In addition, it is preferable that the content of particles having a diameter of 0.4 μm or more measured by the above-described measurement method is below the detection limit. The coarse particles contained in the cleaning liquid correspond to the following substances: particles such as dust, dust, organic solids, and inorganic solids contained as impurities in the raw material, and particles such as dust, dust, organic solids, and inorganic solids introduced as contaminants in the preparation of the cleaning liquid, and substances that are finally not dissolved in the cleaning liquid and exist in the form of particles. The content of coarse particles present in the cleaning liquid can be measured in a liquid phase using a commercially available measuring device in a light scattering type in-liquid particle measuring method using a laser as a light source. As a method for removing coarse particles, for example, purification treatments such as filtering described below can be cited. The cleaning liquid can also be made into a kit in which its raw materials are divided into multiple portions. As a method for making the cleaning liquid into a kit, for example, the following aspects can be cited: preparing a liquid composition containing a chelating agent as the first liquid, and preparing a liquid composition containing component B as the second liquid. [Manufacture of Cleaning Liquid] The cleaning liquid can be manufactured by a known method. Hereinafter, the manufacturing method of the cleaning liquid will be described in detail. [Liquid Preparation Step] The method for preparing the cleaning liquid is not particularly limited. For example, the cleaning liquid can be manufactured by mixing the above-described respective components. The order and / or timing of mixing the above-described respective components are not particularly limited. For example, the following method can be cited: after sequentially adding a chelating agent, component B, and / or any component such as a pH adjuster to a container containing purified water, stirring or the like is performed to thereby prepare the cleaning liquid. In addition, when water and each component are added to the container, they can be added together or divided into multiple times for addition. The stirring device and stirring method used in the preparation of the cleaning liquid are not particularly limited. As a stirrer or disperser, a known device can be used. As a stirrer, for example, an industrial mixer, a portable stirrer, a mechanical stirrer, and a magnetic stirrer can be cited. As a disperser, for example, an industrial disperser, a homogenizer, an ultrasonic disperser, and a bead mill can be cited. Mixing of each component in the step of preparing the cleaning liquid, the purification treatment described below, and storage of the produced cleaning liquid are preferably carried out at 40°C or lower, more preferably at 30°C or lower. In addition, the above treatment is preferably carried out at 5°C or higher, more preferably at 10°C or higher. By carrying out the preparation, treatment and / or storage of the cleaning liquid within the above temperature range, the performance can be maintained stably for a long time. (Purification treatment) In the production of the kit, it is preferable to carry out a purification treatment on any one or more of the raw materials for preparing the cleaning liquid in advance. The purification treatment is not particularly limited, and known methods such as distillation, ion exchange, and filtration can be cited. The degree of purification is not particularly limited, and it is preferably purified until the purity of the raw material reaches 99% by mass or more, more preferably purified until the purity of the raw material reaches 99.9% by mass or more. As a method of purification treatment, for example, methods such as passing the raw material through an ion exchange resin or an RO membrane (Reverse Osmosis Membrane), distillation of the raw material, and filtration (filtering) described below can be cited. As the purification treatment, a combination of multiple purification methods can also be implemented. For example, the raw material can be subjected to a primary purification by passing through an RO membrane, and then a secondary purification by passing through a purification device containing a cation exchange resin, an anion exchange resin, or a mixed bed type ion exchange resin can be carried out. In addition, the purification treatment can also be carried out multiple times. (Filtering) As the filter used in filtering, there is no particular limitation as long as it has been used for filtering purposes, etc. since before. For example, filters containing resins such as polytetrafluoroethylene (PTFE), tetrafluoroethylene perfluoroalkyl vinyl ether copolymer (PFA) and other fluororesins, polyamide resins such as nylon, and polyolefin resins (including high density or ultra-high molecular weight) such as polyethylene and polypropylene (PP) can be cited. Among these materials, materials selected from the group consisting of polyethylene, polypropylene (including high density polypropylene), fluororesins (including PTFE and PFA), and polyamide resins (including nylon) are preferred, and filters made of fluororesins are more preferred. By filtering the raw material using a filter formed of these materials, highly polar foreign substances that are likely to cause defects can be effectively removed. The critical surface tension of the filter is preferably 70 mN / m to 95 mN / m, more preferably 75 mN / m to 85 mN / m. Furthermore, the value of the critical surface tension of the filter is the nominal value of the manufacturer. By using a filter with a critical surface tension in the above range, highly polar foreign substances that are likely to cause defects can be effectively removed. The pore diameter of the filter is preferably 2 nm to 20 nm, more preferably 2 nm to 15 nm. By setting it within this range, while suppressing filter clogging, fine foreign substances such as impurities and aggregates contained in the raw material can be surely removed. Filters can also be combined for filtering. At this time, the filtering using the first filter can be performed only once or more than twice. When filtering more than twice by combining different filters, it is preferable that the pore diameter after the second time is the same as or smaller than the pore diameter of the first filtering. In addition, the first filters with different pore diameters can also be combined within the above range. The pore diameter here can refer to the nominal value of the filter manufacturer. As commercially available filters, for example, various filters provided by Pall Corporation, Advantec Toyo Co., Ltd., Entegris Inc. (formerly Mykrolis Corporation), or Kitz Microfilter Co., Ltd. in Japan can be selected. In addition, "P-nylon filter (pore diameter 0.02 μm, critical surface tension 77 mN / m)" made of polyamide (manufactured by Pall Corporation, Japan), "PE-clean filter (pore diameter 0.02 μm)" made of high-density polyethylene (manufactured by Pall Corporation, Japan), and "PE-clean filter (pore diameter 0.01 μm)" made of high-density polyethylene (manufactured by Pall Corporation, Japan) can also be used. The second filter can be a filter formed of the same material as the first filter. The pore diameter of the second filter is preferably 1 nm to 10 nm. In addition, filtering is preferably carried out at a temperature below room temperature (25 °C), more preferably below 23 °C, and even more preferably below 20 °C. In addition, it is preferably above 0 °C, more preferably above 5 °C, and even more preferably above 10 °C. By carrying out filtering within the above temperature range, the amount of particulate foreign matter and impurities dissolved in the raw material can be reduced, and foreign matter and impurities can be efficiently removed. (Container) As long as corrosiveness and the like are not a problem, the cleaning liquid (including the form of the kit or the dilution liquid described later) can be filled into any container for storage, transportation, and use. As the container, it is preferably a container for semiconductor use with high cleanliness inside the container and with the dissolution of impurities from the inner wall of the container's housing part into each liquid being suppressed. As such a container, various containers commercially available as containers for semiconductor cleaning liquids can be cited. For example, the "clean bottle" series manufactured by Aicello Chemical Co., Ltd., and the "pure bottle" manufactured by Kodama Resin Industry Co., Ltd., etc. can be cited, but it is not limited to these. In addition, as the container for housing the cleaning liquid, it is preferably a container in which the contact part such as the inner wall of its housing part with each liquid is formed of a fluororesin (perfluororesin) or a metal that has been subjected to rust prevention and metal dissolution prevention treatment. The inner wall of the container is preferably formed of one or more resins selected from the group consisting of polyethylene resin, polypropylene resin, and polyethylene-polypropylene resin, or a resin different from these resins, or a metal such as stainless steel, Hastelloy, Inconel, and Monel that has been subjected to rust prevention and metal dissolution prevention treatment. As the different resin, it is preferably a fluororesin (perfluororesin). Thus, by using a container with a fluororesin inner wall, the occurrence of adverse conditions such as the dissolution of ethylene or propylene oligomers can be suppressed compared to a container with a polyethylene resin, polypropylene resin, or polyethylene-polypropylene resin inner wall. As a specific example of such a container with a fluororesin inner wall, for example, the FluoroPure PFA composite cylinder manufactured by Entegris, Inc. can be cited. In addition, the containers described on page 4 of Japanese Patent Publication No. Hei 3-502677, page 3 of International Publication No. 2004 / 016526, and pages 9 and 16 of International Publication No. 99 / 46309 can also be used. In addition, in the inner wall of the container, in addition to using the fluororesin, it is also preferable to use quartz and electrolytically polished metal materials (i.e., metal materials that have completed electrolytic polishing). The metal material used in the manufacture of the electrolytically polished metal material is preferably a metal material containing at least one selected from the group consisting of chromium and nickel, and the total content of chromium and nickel is more than 25% by mass relative to the total mass of the metal material. Examples of such metal materials include stainless steel and nickel-chromium alloys. More preferably, the total content of chromium and nickel in the metal material is 30% by mass or more relative to the total mass of the metal material. Furthermore, the upper limit value of the total content of chromium and nickel in the metal material is not particularly limited, and is preferably 90% by mass or less. There is no particular limitation on the stainless steel, and known stainless steels can be used. Among them, an alloy containing 8% by mass or more of nickel is preferable, and an austenite stainless steel containing 8% by mass or more of nickel is more preferable. Examples of austenitic stainless steels include SUS (Steel Use Stainless) 304 (Ni content 8% by mass, Cr content 18% by mass), SUS304L (Ni content 9% by mass, Cr content 18% by mass), SUS316 (Ni content 10% by mass, Cr content 16% by mass), and SUS316L (Ni content 12% by mass, Cr content 16% by mass), etc. There is no particular limitation on the nickel-chromium alloy, and known nickel-chromium alloys can be used. Among them, a nickel-chromium alloy with a nickel content of 40% by mass to 75% by mass and a chromium content of 1% by mass to 30% by mass is preferable. Examples of nickel-chromium alloys include Hastelloy (trade name, the same below), Monel (trade name, the same below), and Inconel (trade name, the same below), etc. More specifically, examples include Hastelloy C-276 (Ni content 63% by mass, Cr content 16% by mass), Hastelloy-C (Ni content 60% by mass, Cr content 17% by mass), and Hastelloy C-22 (Ni content 61% by mass, Cr content 22% by mass), etc. In addition, in addition to the above alloys, the nickel-chromium alloy may further contain boron, silicon, tungsten, molybdenum, copper, cobalt, etc. as needed. The method for electrolytically polishing the metal material is not particularly limited, and known methods can be used. For example, the methods described in paragraphs

[0011] -

[0014] of Japanese Patent Application Laid-Open No. 2015-227501 and paragraphs

[0036] -

[0042] of Japanese Patent Application Laid-Open No. 2008-264929 can be used. It is speculated that the content of chromium in the passivation layer on the surface of the metal material after electrolytic polishing is higher than that in the matrix phase. Therefore, it is speculated that metal elements are less likely to flow out from the inner wall coated with the metal material after electrolytic polishing into the cleaning liquid, and thus liquids and cleaning liquids with reduced metal impurity content can be obtained. Furthermore, the metal material is preferably subjected to buffing and polishing. The method of buffing and polishing is not particularly limited, and known methods can be used. The size of the abrasive grains used in the finishing of buffing and polishing is not particularly limited, and it is preferably #400 or less in terms of making the unevenness on the surface of the metal material easier to become smaller. Furthermore, buffing and polishing is preferably performed before electrolytic polishing. In addition, the metal material can also be processed by using a single one selected from multi-stage buffing and polishing, pickling, and magnetic fluid polishing by changing the size of the abrasive grains and other grit numbers, or by combining two or more of them. These containers are preferably washed inside before filling with the cleaning liquid. The liquid used for washing is preferably one with reduced metal impurity content in the liquid. The cleaning liquid can be bottled (bottling) into containers such as gallon bottles or coating bottles after production for transportation or storage. For the purpose of preventing changes in the components of the cleaning liquid during storage, the inside of the container can also be replaced with an inert gas (nitrogen, argon, etc.) with a purity of 99.99995 vol% or more. Particularly preferably, it is a gas with a low water content. In addition, during transportation and storage, it can be at room temperature, and in order to prevent deterioration, the temperature can also be controlled in the range of -20°C to 20°C. (Clean room) Operations, processing analysis, and measurements including the manufacture of the cleaning liquid, opening and washing of the container, filling of the cleaning liquid, etc. are preferably all carried out in a clean room. The clean room preferably meets the clean room standard of 14644-1. In addition, the clean room preferably meets any one of ISO (International Standardization Organization) class 1, ISO class 2, ISO class 3, and ISO class 4, more preferably meets ISO class 1 or ISO class 2, and even more preferably meets ISO class 1. [Dilution step] The cleaning liquid is subjected to a dilution step of dilution using a diluent such as water and then supplied for cleaning the semiconductor substrate. In the cleaning liquid of the present invention, the relationship of the pKa of the chelating agent and the pH value of the cleaning liquid satisfies the formula (A), and the change in the pH value during dilution for use can be suppressed. That is, the difference between the pH value of the cleaning liquid as a concentrated liquid before dilution and the pH value of the cleaning liquid after dilution by the dilution step (hereinafter, also referred to as "diluted cleaning liquid") becomes smaller. As a result, the deviation in the residue removal performance that may occur during dilution for use in cleaning a semiconductor substrate can be suppressed. The dilution rate of the cleaning liquid in the dilution step can be appropriately adjusted according to the types and contents of the respective components, as well as the semiconductor substrate to be cleaned. As the dilution rate of the cleaning liquid in the dilution step, the ratio of the diluted cleaning liquid to the cleaning liquid before dilution is preferably 10 to 1000 times, more preferably 30 to 300 times in terms of mass ratio. In addition, in terms of more excellent residue removal performance, the cleaning liquid is preferably diluted with water. As described above, the pH value of the diluted cleaning liquid hardly changes compared to the pH value of the cleaning liquid as a concentrated liquid. The difference between the pH value of the cleaning liquid before dilution and the pH value of the diluted cleaning liquid is preferably 1.0 or less, more preferably 0.8 or less, and even more preferably 0.5 or less. In addition, the pH value of the diluted cleaning liquid is preferably more than 7.0, more preferably 7.5 or more. The upper limit of the pH value of the diluted cleaning liquid is preferably 12.5 or less, more preferably 11.5 or less, and even more preferably 10.5 or less at 25°C. There is no particular limitation on the specific method of the dilution step for diluting the cleaning liquid, as long as it is carried out according to the liquid preparation step of the cleaning liquid. In addition, there is no particular limitation on the stirring device and stirring method used in the dilution step, as long as a known stirring device listed in the liquid preparation step of the cleaning liquid is used. It is preferably to perform a purification treatment on the water used in the dilution step in advance. In addition, it is preferably to perform a purification treatment on the diluted cleaning liquid obtained by the dilution step. The purification treatment is not particularly limited, and examples thereof include the ion component reduction treatment using an ion exchange resin or an RO membrane, etc., which is described as a purification treatment for the cleaning liquid, and the foreign matter removal using filtration. It is preferably to perform any one of these treatments. The content of the chelating agent in the diluted cleaning liquid is preferably 0.00001 mass% to 3 mass%, more preferably 0.0001 mass% to 0.3 mass%, relative to the total mass of the diluted cleaning liquid. When the diluted cleaning liquid contains component B, the content of component B is preferably 0.000011 mass% to 1.1 mass%, more preferably 0.00011 mass% to 0.11 mass%, relative to the total mass of the diluted cleaning liquid. When the diluted cleaning liquid contains a surfactant, the content of the surfactant is preferably 0.000001 mass% to 0.1 mass%, more preferably 0.00001 mass% to 0.01 mass%, relative to the total mass of the diluted cleaning liquid. When the diluted cleaning liquid contains a corrosion inhibitor, the content of the corrosion inhibitor is preferably 0.00001 mass% to 1 mass%, more preferably 0.0001 mass% to 0.1 mass%, relative to the total mass of the diluted cleaning liquid. Regarding the cleaning liquid, after the liquid preparation step, it is also preferable to perform the dilution step after a concentration step of preparing a concentrated liquid by concentration. The concentration method of the cleaning liquid in the concentration step is not particularly limited as long as it does not hinder the performance of the cleaning liquid, and known methods such as distillation can be used. The concentration rate of the cleaning liquid in the concentration step can be appropriately adjusted according to the type and content of each component, etc. The ratio of the concentrated liquid to the cleaning liquid before concentration is preferably 1 / 50 times to 1 / 5000 times, more preferably 1 / 100 times to 1 / 3000 times, in terms of mass ratio. In particular, when the ratio of the concentrated liquid to the cleaning liquid before concentration is high, the decomposition of the compound may be promoted. In the cleaning liquid, in order to suppress the decomposition of the compound even when the concentration rate is increased and for the simplicity of transportation, etc., it is preferably concentrated at the ratio within the above range. [Use of the cleaning liquid] As long as the cleaning liquid can be used in the cleaning of the semiconductor substrate, it can also be used in any step in the manufacturing process of the semiconductor substrate. The cleaning liquid is preferably used in the cleaning of a semiconductor substrate on which chemical mechanical polishing (CMP) treatment has been performed. Furthermore, as described above, in the actual cleaning of the semiconductor substrate, a diluted cleaning liquid obtained by diluting the cleaning liquid can be used. 〔Semiconductor substrate〕 The semiconductor substrate to be cleaned by the cleaning liquid is not particularly limited, and examples thereof include a substrate having a metal wiring film, a barrier metal, and an insulating film on the surface of a wafer constituting the semiconductor substrate. As specific examples of the wafers constituting the semiconductor substrate, there may be mentioned: wafers containing silicon-based materials such as silicon (Si) wafers, silicon carbide (SiC) wafers, resin-based wafers containing silicon (glass epoxy wafers), gallium phosphide (GaP) wafers, gallium arsenide (GaAs) wafers, and indium phosphide (InP) wafers. As the silicon wafer, it may be an n-type silicon wafer doped with pentavalent atoms (for example, phosphorus (P), arsenic (As), and antimony (Sb), etc.) into the silicon wafer, and a p-type silicon wafer doped with trivalent atoms (for example, boron (B), and gallium (Ga), etc.) into the silicon wafer. The silicon of the silicon wafer may be, for example, any one of amorphous silicon, single crystal silicon, polycrystalline silicon, and polysilicon. Among them, the cleaning liquid is useful for wafers containing silicon-based materials such as silicon wafers, silicon carbide wafers, and resin-based wafers containing silicon (glass epoxy wafers). The semiconductor substrate may also have an insulating film on the wafer. As specific examples of the insulating film, there may be mentioned: silicon oxide films (for example, silicon dioxide (SiO 2 )film, and tetraethyl orthosilicate (Si(OC 2 H 5 ) 4 )film (TEOS film), etc.), silicon nitride films (for example, silicon nitride (Si 3 N 4 ), and silicon carbonitride (SiNC), etc.), and low dielectric constant (Low-k) films (for example, silicon oxide films doped with carbon (SiOC) films, and silicon carbide (SiC) films, etc.). As the metal film on the wafer surface of the semiconductor substrate, examples include: a film with copper (Cu) as the main component (copper-containing film), a film with cobalt (Co) as the main component (cobalt-containing film), a film with tungsten (W) as the main component (tungsten-containing film), and a metal film composed of an alloy containing one or more selected from the group consisting of Cu, Co, and W. As the copper-containing film, for example, a wiring film containing only metallic copper (copper wiring film) and a wiring film made of an alloy of metallic copper and other metals (copper alloy wiring film) can be cited. As a specific example of the copper alloy wiring film, a wiring film made of an alloy of one or more metals selected from aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), tantalum (Ta), and tungsten (W) and copper can be cited. More specifically, a copper-aluminum alloy wiring film (CuAl alloy wiring film), a copper-titanium alloy wiring film (CuTi alloy wiring film), a copper-chromium alloy wiring film (CuCr alloy wiring film), a copper-manganese alloy wiring film (CuMn alloy wiring film), a copper-tantalum alloy wiring film (CuTa alloy wiring film), and a copper-tungsten alloy wiring film (CuW alloy wiring film) etc. can be cited. As the cobalt-containing film (metal film with cobalt as the main component), for example, a metal film containing only metallic cobalt (cobalt metal film) and a metal film made of an alloy of metallic cobalt and other metals (cobalt alloy metal film) can be cited. As a specific example of the cobalt alloy metal film, a metal film made of an alloy of one or more metals selected from titanium (Ti), chromium (Cr), iron (Fe), nickel (Ni), molybdenum (Mo), palladium (Pd), tantalum (Ta), and tungsten (W) and cobalt can be cited. More specifically, a cobalt-titanium alloy metal film (CoTi alloy metal film), a cobalt-chromium alloy metal film (CoCr alloy metal film), a cobalt-iron alloy metal film (CoFe alloy metal film), a cobalt-nickel alloy metal film (CoNi alloy metal film), a cobalt-molybdenum alloy metal film (CoMo alloy metal film), a cobalt-palladium alloy metal film (CoPd alloy metal film), a cobalt-tantalum alloy metal film (CoTa alloy metal film), and a cobalt-tungsten alloy metal film (CoW alloy metal film) etc. can be cited. The cleaning liquid is useful for a substrate having a cobalt-containing film. In the cobalt-containing film, the cobalt metal film is mostly used as a wiring film, and the cobalt alloy metal film is mostly used as a barrier metal. In addition, it is sometimes preferable to use the cleaning liquid for cleaning a substrate that has at least a copper-containing wiring film and a metal film (cobalt barrier metal) composed only of metallic cobalt and serving as a barrier metal for the copper-containing wiring film on the upper part of the wafer constituting the semiconductor substrate, and the copper-containing wiring film and the cobalt barrier metal are in contact on the substrate surface. As the tungsten-containing film (a metal film mainly composed of tungsten), for example, a metal film containing only tungsten (tungsten metal film) and a metal film made of an alloy containing tungsten and other metals (tungsten alloy metal film) can be cited. As a specific example of the tungsten alloy metal film, for example, a tungsten-titanium alloy metal film (WTi alloy metal film), a tungsten-cobalt alloy metal film (WCo alloy metal film), etc. can be cited. The tungsten-containing film is mostly used as a barrier metal. As a method for forming the insulating film, copper-containing wiring film, cobalt-containing film, and tungsten-containing film on a wafer constituting a semiconductor substrate, there is no particular limitation as long as it is a known method in the art. As a method for forming the insulating film, for example, the following method can be cited: a wafer constituting a semiconductor substrate is heat-treated in the presence of oxygen to form a silicon oxide film, and then, gases of silane and ammonia are introduced, and a silicon nitride film is formed by chemical vapor deposition (CVD: Chemical Vapor Deposition) method. As a method for forming the copper-containing wiring film, cobalt-containing film, and tungsten-containing film, for example, the following method can be cited: a circuit is formed on the wafer having the insulating film by a known method such as a resist, and then, a copper-containing wiring film, a cobalt-containing film, and a tungsten-containing film are formed by methods such as plating and CVD method. (CMP process) The CMP process is a process for planarizing the surface of a substrate having a metal wiring film, a barrier metal, and an insulating film, for example, by the combined action of the chemical action of using a polishing slurry containing abrasive fine particles (abrasive grains) and mechanical polishing. On the surface of the semiconductor substrate on which the CMP process has been performed, impurities such as metal impurities (metal residues) derived from the abrasive grains (for example, silica and alumina, etc.) used in the CMP process, the polished metal wiring film, and the barrier metal may remain. There is a concern that these impurities may cause a short circuit between wirings and deteriorate the electrical characteristics of the semiconductor substrate. Therefore, the semiconductor substrate on which the CMP process has been performed is subjected to a cleaning process for removing these impurities from the surface. As a specific example of the semiconductor substrate on which the CMP process has been performed, a substrate on which the CMP process has been performed described in "Journal of the Japan Society of Precision Engineering" (Vol. 84, No. 3, 2018) can be cited, but it is not limited thereto. [Cleaning method of semiconductor substrate] There is no particular limitation on the cleaning method of the semiconductor substrate as long as it is a method of bringing the surface of the semiconductor substrate into contact with a cleaning liquid (diluted cleaning liquid). As a method for cleaning a semiconductor substrate, for example, the following method can be cited: dipping the semiconductor substrate in the diluted cleaning liquid obtained in the dilution step to thereby clean the semiconductor substrate. At this time, in terms of further reducing the impurities remaining on the surface of the semiconductor substrate, it is preferable to perform ultrasonic treatment on the cleaning liquid in which the semiconductor substrate is dipped. The cleaning method is not particularly limited to the dipping method, and the following methods can also be suitably employed: a rotation (dropwise addition) method in which the cleaning liquid is dropped while rotating the semiconductor substrate, a spraying (spray) method in which the cleaning liquid is sprayed, and other known methods carried out in this field. As a method for cleaning a semiconductor substrate, either a single-wafer method or a batch method can be adopted. The single-wafer method is a method of processing semiconductor substrates one by one, and the batch method is a method of processing multiple semiconductor substrates simultaneously. The temperature of the cleaning liquid used in the cleaning of the semiconductor substrate is not particularly limited as long as it is the temperature of the cleaning liquid carried out in this field. A cleaning liquid at room temperature (25 °C) is mostly used, and the upper limit of the temperature can be arbitrarily selected in order to improve the cleaning performance and / or suppress damage to the components. For example, as the temperature of the cleaning liquid, it is preferably 10 °C to 60 °C, more preferably 15 °C to 50 °C. The cleaning time in the cleaning of the semiconductor substrate depends on the type and content of the components contained in the cleaning liquid, etc., and thus cannot be generalized. In terms of practical aspects, it is preferably 10 seconds to 2 minutes, more preferably 20 seconds to 1 minute and 30 seconds, and even more preferably 30 seconds to 1 minute. In the cleaning of the semiconductor substrate, in order to further enhance the cleaning ability of the cleaning liquid, a mechanical stirring method can also be used. As the mechanical stirring method, for example, the following can be cited: a method of circulating the cleaning liquid on the semiconductor substrate, a method of flowing the cleaning liquid or spraying the cleaning liquid on the semiconductor substrate, and a method of stirring the cleaning liquid using ultrasonic waves or megasonic waves. After the cleaning of the semiconductor substrate, a step of rinsing the semiconductor substrate with a solvent for cleaning (hereinafter referred to as the "rinsing step") can also be carried out. The rinsing step is preferably carried out continuously after the cleaning step of the semiconductor substrate, and is a step of rinsing with a rinsing solvent (rinsing liquid) for 5 seconds to 5 minutes. The rinsing step can also be carried out using the mechanical stirring method. As the rinsing solvent, for example, the following can be cited: deionized (DI: De Ionize) water, methanol, ethanol, isopropyl alcohol, N-methylpyrrolidone, γ-butyrolactone, dimethyl sulfoxide, ethyl lactate, and propylene glycol monomethyl ether acetate. In addition, an aqueous rinsing liquid (diluted aqueous ammonium hydroxide, etc.) with a pH value exceeding 8 can also be used. As a method of bringing the rinsing solvent into contact with the semiconductor substrate, the method of bringing the cleaning liquid into contact with the semiconductor substrate can be similarly applied. In addition, a drying step for drying the semiconductor substrate may be performed after the rinsing step. The drying method is not particularly limited, and examples thereof include a spin drying method, a method of flowing a dry gas over the semiconductor substrate, a method of heating the substrate by a heating mechanism such as a hot plate or an infrared lamp, a Marangoni drying method, a Rotagoni drying method, an IPA (isopropyl alcohol) drying method, and any combination thereof. [Examples] Hereinafter, the present invention will be described in more detail based on examples. The materials, amounts used, ratios, etc. shown in the following examples can be appropriately changed without departing from the gist of the present invention. Therefore, the scope of the present invention is not limitedly interpreted by the examples shown below. In the following examples, the pH values of the cleaning liquid and the diluted cleaning liquid were measured in accordance with JIS Z8802-1984 using a pH meter (manufactured by Horiba, Ltd., model "F-74"). In addition, when manufacturing the cleaning liquids of the manufacturing examples and the comparative examples, all operations of the containers, preparation of the cleaning liquid, filling, storage, and analysis and measurement were carried out in a clean room that meets a level of ISO class 2 or lower. To improve the measurement accuracy, in the measurement of the metal content of the cleaning liquid, when measuring substances below the detection limit, the cleaning liquid was concentrated to 1 / 100 in terms of volume conversion for measurement, and the concentration of the solution before concentration was converted to calculate the content. [Composition of the cleaning liquid] As chelating agents, the following compounds were used in the manufacture of the cleaning liquid. In addition, the acid dissociation constants (pKa) of each chelating agent are shown in Table 1. · Citric acid: manufactured by Fuso Chemical Industry Co., Ltd. · 1-Hydroxyethylidene-1,1-diphosphonic acid (HEDP): "Dequest 2000" manufactured by Thermphos · L-Arginine: manufactured by Tokyo Chemical Industry Co., Ltd. · Tartaric acid: manufactured by Fujifilm Wako Pure Chemical Corporation · N,N,N',N'-Ethylenediaminetetra(methylenephosphonic acid) (EDTPO): "Dequest 2066" manufactured by Thermphos · Diethylenetriaminepentaacetic acid (DTPA): manufactured by Fujifilm Wako Pure Chemical Corporation · Ethylenediaminetetraacetic acid (EDTA): manufactured by Chelest · Glycine (Gly): manufactured by Fujifilm Wako Pure Chemical Corporation · β-Alanine (ALA): manufactured by Fujifilm Wako Pure Chemical Corporation [Table 1] As the surfactant (Component B), the following compounds are used in the manufacture of the cleaning liquid. · Lauryl phosphate (lauryl phosphate ester): an anionic surfactant, "Phosten HLP" manufactured by Nikka Chemical Co., Ltd. · Dodecylbenzenesulfonic acid (DBSA): an anionic surfactant, manufactured by FUJIFILM Wako Pure Chemical Corporation · Dinitrobenzenesulfonic acid (DNBSA): an anionic surfactant, manufactured by Kao Corporation · Lauryl diphenyl ether disulfonic acid (LDPEDSA): an anionic surfactant, "takesurf A-43-N" manufactured by Takemoto Oil & Fat Co., Ltd. · Polyoxyethylene dioleate (POED): a nonionic surfactant, "newkalgen D-2504-D" manufactured by Takemoto Oil & Fat Co., Ltd. · POE lauryl phosphate (polyoxyethylene lauryl ether phosphate ester): an anionic surfactant, manufactured by Nikka Chemical Co., Ltd. As the corrosion inhibitor (Component B), the following compounds are used in the manufacture of the cleaning liquid. · Diazabicycloundecene (DBU): manufactured by FUJIFILM Wako Pure Chemical Corporation · Piperazine: manufactured by FUJIFILM Wako Pure Chemical Corporation · Diethylhydroxylamine (DEHA): manufactured by FUJIFILM Wako Pure Chemical Corporation · Diazabicyclononene (DBN): manufactured by FUJIFILM Wako Pure Chemical Corporation · 5-Aminotetrazole: manufactured by FUJIFILM Wako Pure Chemical Corporation · 1H-Tetrazole: manufactured by FUJIFILM Wako Pure Chemical Corporation · 1,2,4-Triazole: manufactured by FUJIFILM Wako Pure Chemical Corporation · 2-Aminopyrimidine: manufactured by FUJIFILM Wako Pure Chemical Corporation · Ascorbic acid: manufactured by FUJIFILM Wako Pure Chemical Corporation · Gallic acid: manufactured by FUJIFILM Wako Pure Chemical Corporation · 1,4-Bis(3-aminopropyl)piperazine (BAP): manufactured by FUJIFILM Wako Pure Chemical Corporation · 1-(2-Hydroxyethyl)piperazine (HEP): manufactured by FUJIFILM Wako Pure Chemical Corporation · 1,3-Diaminopropane: manufactured by FUJIFILM Wako Pure Chemical Corporation (not equivalent to Component B) As the pH adjuster, the following compound is used in the manufacture of the cleaning liquid. · Ammonia water (NH 3): Manufactured by FUJIFILM Wako Pure Chemical Corporation · 2-Hydroxyethyltrimethylammonium hydroxide (choline): Manufactured by FUJIFILM Wako Pure Chemical Corporation · Tetrabutylammonium hydroxide (TBAH): Manufactured by FUJIFILM Wako Pure Chemical Corporation · 2-Amino-2-methyl-1-propanol (AMP): Manufactured by FUJIFILM Wako Pure Chemical Corporation · Monoethanolamine (MEA): Manufactured by FUJIFILM Wako Pure Chemical Corporation · Diethanolamine (DEA): Manufactured by FUJIFILM Wako Pure Chemical Corporation · Tris(hydroxymethyl)aminomethane (Tris): Manufactured by FUJIFILM Wako Pure Chemical Corporation · Dimethylbis(2-hydroxyethyl)ammonium hydroxide (AH212): Manufactured by FUJIFILM Wako Pure Chemical Corporation · 2-(2-Aminoethoxy)ethanol (AEE): Manufactured by FUJIFILM Wako Pure Chemical Corporation · 4-(2-Aminoethyl)morpholine (AEM): Manufactured by FUJIFILM Wako Pure Chemical Corporation In addition, in the production of the cleaning solution and the dilution step of the cleaning solution in this example, commercially available ultrapure water (manufactured by FUJIFILM Wako Pure Chemical Corporation) was used. [Production of Cleaning Solution] Next, the production method of the cleaning solution will be described using Example 1 as an example. Citric acid and HEDP were used as chelating agents, and DBU was used as the corrosion inhibitor in Component B. In ultrapure water, citric acid and HEDP were added in amounts to achieve the contents described in Table 2-1, and then DBU was added so that the pH value of the cleaning solution became 8.0. The obtained mixed solution was sufficiently stirred using a stirrer to obtain the cleaning solution of Example 1. According to the production method of Example 1, cleaning solutions of Example 2 to Example 103 and Comparative Example 1 to Comparative Example 4 having the compositions shown in Tables 2-1 to 2-3 were respectively produced. Furthermore, in each cleaning solution, the remainder other than the components shown in Tables 2-1 to 2-3 was water. In the column of "Amount" in Tables 2-1 to 2-3, it represents the content of each component relative to the total mass of the cleaning solution. Furthermore, when it is described as "*1" in the column of "Amount", it means that the amount of each compound is adjusted so that the pH value of the cleaning solution becomes the value described in the column of "pH value" in Tables 2-1 to 2-3. In Tables 2-1 to 2-3, the numerical value in the column of "Ratio" of "Chelating Agent" represents the mass ratio of another chelating agent to the content of one of the chelating agents when multiple chelating agents are used. 〔Measurement of Metal Content〕 For the cleaning liquids manufactured in each of the examples and comparative examples, the metal content was measured. The measurement of the metal content was carried out using an Agilent 8800 Triple Quadrupole Inductively Coupled Plasma Mass Spectrometer (ICP-MS) (for semiconductor analysis, option #200) under the following measurement conditions. (Measurement Conditions) For the sample introduction system, a quartz torch, a coaxial type PFA nebulizer (for self-absorption), and a platinum interface cone were used. The measurement parameters under cold plasma conditions are as described below. · Radio Frequency (RF) output (W): 600 · Carrier gas flow rate (L / min): 0.7 · Makeup gas flow rate (L / min): 1 · Sampling depth (mm): 18 In the measurement of the metal content, metal particles and metal ions were not distinguished and were totaled together. Additionally, in the case where two or more metals were detected, the total content of the two or more metals was determined. The measurement results of the metal content are shown in the "Metal Content" column of Table 2 (unit: mass ppb). "<10", "<0.1", and ">100000" in Table 2 indicate that the metal content in the cleaning liquid is less than 10 mass ppb, less than 0.1 mass ppb, and more than 100000 mass ppb (more than 100 mass ppm), respectively, relative to the total mass of the cleaning liquid. [Evaluation of pH Value Variation Caused by Dilution] Using the cleaning liquids manufactured by the above method, the performance of suppressing pH value variation during dilution was evaluated. 1 mL of the cleaning liquid from each of the examples and comparative examples was taken and diluted 100-fold by volume with ultrapure water to prepare a sample of the diluted cleaning liquid, and the pH value of the obtained sample was measured. Based on the measurement results, the difference (absolute value) between the pH value of the cleaning liquid before dilution and the pH value of the cleaning liquid after dilution (diluted cleaning liquid) was calculated. Based on the obtained calculation results, the performance of suppressing pH value variation caused by dilution of each cleaning liquid was evaluated according to the following evaluation criteria. The results are shown in Table 2. "A": The difference in pH value before and after dilution is less than 1.0 "B": The difference in pH value before and after dilution is 1.0 or more and less than 1.5 "C": The difference in pH value before and after dilution is 1.5 or more and less than 2.0 "D": The difference in pH value before and after dilution is 2.0 or more [Evaluation of Defect Suppression Performance] Evaluate the defect suppression performance when cleaning a polished metal film with the cleaning liquid manufactured by the said method. Take 1 mL of the cleaning liquid of each example and each comparative example, and dilute it with ultrapure water to 100 times by volume ratio to prepare a sample of the diluted cleaning liquid. Using FREX300S-II (a polishing device, manufactured by Ebara Corporation), polish a wafer (12 inches in diameter) with a film containing copper, cobalt, or tungsten on its surface under the conditions that the polishing pressure is set to 2.0 psi and the supply rate of the polishing liquid is set to 0.28 ml / (min·cm 2 ). As the polishing liquid, use CSL5220C (trade name, manufactured by FUJIFILM Planar Solutions) for wafers with Co-containing films, use BSL8120C (trade name, manufactured by FUJIFILM Planar Solutions) for wafers with Cu-containing films, and use W2000 (trade name, manufactured by Cabot) for wafers with W-containing films. The polishing time is 60 seconds. Thereafter, use the sample of each diluted cleaning liquid adjusted to room temperature (23 °C), scrub for 60 minutes for cleaning, and perform a drying treatment. Use a defect detection device (manufactured by AMAT, ComPlusII) to detect the number of defects in the polished surface of the obtained wafer, and evaluate the defect suppression performance of the cleaning liquid according to the following evaluation criteria. The results of these are shown in Tables 2-1 to 2-3. "A": The number of defects is 500 or less. "B": The number of defects exceeds 500 and is 1000 or less. "C": The number of defects exceeds 1000 and is 1500 or less. "D": The number of defects exceeds 1500 [Evaluation of Storage Stability] Using the cleaning liquid produced by the described method, evaluate the storage stability. Fill the cleaning liquids of Examples 1 to 103 and Comparative Examples 1 to 4 produced according to the described method into containers for semiconductor cleaning liquids. Place the containers containing each cleaning liquid in a constant temperature bath at a temperature of 30°C and a humidity of 50%RH, and store them in the constant temperature bath for 1 year. Take 1 mL of the cleaning liquid of each example and each comparative example that has undergone the storage test, and use a sample of the diluted cleaning liquid obtained by diluting it 100 times by volume ratio with ultrapure water. Except for this, according to the evaluation method of the defect suppression performance, detect the number of defects in the polished surface of the obtained wafer, and evaluate the storage stability of the cleaning liquid according to the following evaluation criteria. The results of these are shown in Tables 2-1 to 2-3. "A": The number of defects is 500 or less. "B": The number of defects exceeds 500 and is 1000 or less. "C1": The number of defects exceeds 1000 and is 1250 or less. "C2": The number of defects exceeds 1250 and is 1500 or less. "D": The number of defects exceeds 1500 [Table 2] [Table 3] [Table 4] [Table 5] [Table 6] [Table 7] [Table 8] [Table 9] As is clear from the acid dissociation constant (pKa) of the chelating agent shown in Table 1 and the pH values of the cleaning liquids shown in Tables 2-1 to 2-3, the cleaning liquids of Examples 1 to 103 all satisfy the relationship of the formula (A) between the pKa of the chelating agent and the pH value of the cleaning liquid. As is clear from Table 1 and Tables 2-1 to 2-3, it is confirmed that the cleaning liquid of the present invention containing a chelating agent and satisfying the formula (A) has excellent performance in suppressing the change in pH value caused by dilution. It was confirmed that when the cleaning liquid contains a corrosion inhibitor, the defect suppression performance with respect to the copper-containing film and the tungsten-containing film is excellent (refer to the comparison of the results of Examples 1 to 3). It was confirmed that when the cleaning liquid contains a surfactant, the defect suppression performance with respect to the copper-containing film is excellent (refer to the comparison of the results of Examples 2, 3, 31, and 32). It was confirmed that when the cleaning liquid contains both a surfactant and a corrosion inhibitor, the defect suppression performance with respect to the cobalt-containing film is even more excellent (refer to the comparison of the results of Examples 1, 2, 30, and 31). It was confirmed that when the cleaning liquid contains an alkanolamine, the defect suppression performance with respect to the copper-containing film and the tungsten-containing film is excellent (refer to the comparison of the results of Examples 2 and 18). It was confirmed that when the cleaning liquid contains an alkaline organic compound, the storage stability of the cleaning liquid is excellent (refer to the comparison of the results of Examples 2, 3, 14, and 18). It was confirmed that when the cleaning liquid contains all of a chelating agent, a surfactant, and an alkaline organic compound, the defect suppression performance with respect to the copper-containing film and the cobalt-containing film is excellent (refer to the comparison of the results of Examples 18 to 22, 30 to 32, 48 to 50, 59 to 61, 66 to 68, 87 to 98, 100, and 101). [Evaluation of Corrosion Inhibition Performance] According to the manufacturing method of Example 1, cleaning liquids of Examples 111 to 114 having the compositions shown in Table 3 were respectively manufactured. Furthermore, in each cleaning liquid, the remaining portion other than the components shown in Table 3 is water. 2 mL of the cleaning liquid of each example was taken and diluted 100-fold by volume with ultrapure water to prepare a sample (200 mL) of the diluted cleaning liquid. A wafer (12-inch diameter) having a metal film containing copper, cobalt, or tungsten on the surface was cut, and wafer coupons (2 cm□) were respectively prepared. The thickness of each metal film was set to 200 nm. The wafer was immersed in the sample of the diluted cleaning liquid manufactured by the above method, and immersed at room temperature for 30 minutes with a stirring speed of 250 rpm. For each metal film, the film thickness before and after the immersion treatment was calculated, and the corrosion rate per unit time was calculated from the calculation result. The corrosion inhibition performance of the cleaning liquid was evaluated according to the following evaluation criteria. The results are shown in Table 3. Furthermore, the lower the corrosion rate, the more excellent the corrosion inhibition performance of the cleaning liquid. "A": The corrosion rate is 1 Å / min or less. "B": The corrosion rate exceeds 1 Å / min and is less than 3 Å / min. "C": The corrosion rate is 3 Å / min or more [Table 10] Based on the results shown in Table 3, it was confirmed that when the cleaning liquid contains a hydroxylamine compound as a corrosion inhibitor, the corrosion inhibition performance is excellent (refer to the comparison of the results of Example 111 and Example 114). In addition, it was confirmed that in the cleaning liquid containing a hydroxylamine compound, the corrosion inhibition performance is excellent when a carboxylic acid-based chelating agent is contained compared to when a phosphonic acid-based chelating agent is contained (refer to the comparison of the results of Example 111 and Example 114). In addition, it was confirmed that in the cleaning liquid containing a hydroxylamine compound, the corrosion inhibition performance is excellent when a surfactant is contained compared to when no surfactant is contained (refer to the comparison of the results of Example 111 and Example 114). [Evaluation of the temperature of the cleaning liquid] The temperature of the sample of the diluted cleaning liquid during cleaning was set to 30°C to 50°C. Otherwise, according to the evaluation method of the defect suppression performance and the evaluation test method of the storage stability, the defect suppression performance and the storage stability of the composition of Example 49 were evaluated. As a result, a favorable effect similar to that at room temperature (23°C) was obtained. [Evaluation of the concentration of the cleaning liquid] Instead of the cleaning liquid of Example 49, a cleaning liquid in which the contents of components other than water (DTPA, LDPEDSA, and AMP) were set to 10 times and a sample of the diluted cleaning liquid prepared by diluting with ultrapure water by a volume ratio of 1000 times were used. Otherwise, the pH change caused by dilution, the defect suppression performance, and the storage stability of each sample were evaluated according to the evaluation method of the pH change caused by dilution, the evaluation method of the defect suppression performance, and the evaluation test method of the storage stability. As a result, a favorable effect similar to that of Example 49 was obtained. None

Claims

1. A cleaning solution for use with semiconductor substrates comprising a chelating agent and a etching inhibitor, wherein the acid dissociation constant (pKa) of the chelating agent and the pH value of the cleaning solution satisfy the condition of the following formula (A), wherein the chelating agent comprises a phosphonic acid chelating agent having a phosphonic acid group, and the etching inhibitor comprises at least one selected from the group consisting of hydroxylamine compounds, ascorbic acid compounds, pyridine compounds, pyrazine compounds, pyrimidine compounds, and cyclic amidine compounds, wherein pKa-1 < pH value < pKa+1 (A).

2. The cleaning solution as claimed in claim 1, wherein the chelating agent further comprises a carboxylic acid chelating agent having a carboxyl group.

3. The cleaning solution as claimed in claim 1, wherein the chelating agent comprises at least one selected from diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, iminodiacetic acid, glycine, β-alanine, arginine, citric acid, tartaric acid, 1-hydroxyethylidene-1,1'-diphosphonic acid, and ethylenediaminetetra(methylenephosphonic acid).

4. The cleaning solution as claimed in claim 1 or claim 2, wherein the cleaning solution comprises two or more of the chelating agents.

5. The cleaning solution as claimed in claim 4, wherein the ratio of the content of one chelating agent to the content of another chelating agent in the two or more chelating agents is 1 to 5000 by mass.

6. The cleaning solution as claimed in claim 1 or claim 2, wherein the content of the chelating agent is 0.01% to 30% by mass relative to the total mass of the cleaning solution.

7. The cleaning solution as claimed in claim 1, wherein the cleaning solution further comprises a surfactant.

8. The cleaning solution as claimed in claim 1 or claim 2, wherein the corrosion inhibitor comprises at least one selected from the group consisting of hydroxylamine compounds and ascorbic acid compounds.

9. The cleaning solution as claimed in claim 1, wherein the cleaning solution further comprises a surfactant and an alkaline organic compound.

10. The cleaning solution as claimed in claim 7 or claim 9, wherein the surfactant comprises anionic surfactant.

11. The cleaning solution as claimed in claim 10, wherein the anionic surfactant comprises at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, sulfonic acid surfactants, and carboxylic acid surfactants.

12. The cleaning solution of claim 10, wherein the chelating agent further comprises a carboxylic acid chelating agent having a carboxyl group, and the anionic surfactant comprises at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, sulfonic acid surfactants, and carboxylic acid surfactants.

13. The cleaning solution of claim 10, wherein the anionic surfactant comprises at least one selected from the group consisting of phosphate ester surfactants, phosphonic acid surfactants, and sulfonic acid surfactants.

14. The cleaning solution as claimed in claim 7 or claim 9, wherein the surfactant comprises a nonionic surfactant.

15. The cleaning solution as claimed in claim 1 or claim 2, wherein the cleaning solution further comprises a pH adjuster.

16. The cleaning solution as claimed in claim 1 or claim 2, wherein the pH value of the cleaning solution is 7.5 to 12.0 at 25°C.

17. The cleaning solution as claimed in claim 1 or claim 2, wherein the pH value of the cleaning solution is 8.0 to 12.0 at 25°C.

18. The cleaning solution as described in claim 1 or claim 2, further comprising water.

19. The cleaning solution as claimed in claim 1 or claim 2, wherein the metal content in the cleaning solution is less than 100 ppb by mass relative to the total mass of the cleaning solution.

20. The cleaning solution as claimed in claim 1 or claim 2, wherein the content of particles with a diameter of 0.4 μm or larger contained in the cleaning solution is less than 1,000 per 1 mL of the cleaning solution.