Manufacturing method of circuit board and mounting board
Patent Information
- Application Number
- TW113143712
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-11-21
- Filing Date
- 2024-11-14
- Publication Date
- 2026-10-01
- Estimated Expiration
- 2044-11-13
Smart Images

Figure TWG2TB001913612_001 
Figure TWG2TB001913612_002 
Figure TWG2TB001913612_003
Abstract
Description
Technical Field
[0001] The present disclosure relates to a method for manufacturing a circuit substrate and a mounting substrate. Prior Art
[0002] In recent years, electronicization has been advancing with each passing day, and the technology of mounting electronic components on substrates has been continuously developed. For example, the industry has developed a technology for mounting a plurality of bare chips of semiconductor light-emitting elements represented by light-emitting diodes (hereinafter referred to as "LEDs") used in lighting and display devices on a wiring substrate. For example, in Patent Document 1, the following invention was disclosed, namely: inserting and bonding semiconductor light-emitting elements into a cavity in which a plurality of semiconductor light-emitting elements can be easily positioned and arranged. In addition, in Patent Document 2, the following technology was also developed, namely: in the installation of electronic components using a paste-like bonding material, the technology of suppressing the missing or solder bridge of semiconductor light-emitting elements.
[0003] [Prior Technical Literature] [Patent Document] Patent Document 1: Japanese Patent Application Publication No. 2006-93523 Patent Document 2: Japanese Patent Application Publication No. 2004-47772 Summary of the invention
[0004] [Problems that the invention aims to solve] Here, in the circuit board, terminals and bonding materials are sometimes arranged inside the wall of the insulating material. Sometimes, for this circuit board, the wall is filled with constituent materials, electronic components are mounted using a retaining member, and the electronic components are pressed into the wall using a pressurized reflow device and heated to bond to the circuit board, thereby installing the electronic components. At this time, because excess constituent materials are retained in the wall and the upper part of the wall around the electronic components, the electronic components cannot be fully pressed in during the pressurization process using the pressurized reflow device, and poor connection between the bonding materials of the circuit board and the electronic components may occur. On the other hand, if the constituent materials overflow and spread onto the substrate, there is a problem of contamination of the surface of the substrate.
[0005] The purpose of the present disclosure is to provide a method for manufacturing a circuit substrate and a mounting substrate which can suppress poor connection between the circuit substrate and electronic components and suppress contamination of the substrate.
[0006] [Technical means to solve the problem] The circuit substrate disclosed herein includes: a substrate; at least one pair of terminals, which are arranged on the substrate; a bonding material, which is arranged on the terminals and contains a metal element; and an inner wall of an insulating material, which rises from the substrate in a height direction perpendicular to the main surface of the substrate; and the pair of terminals and the bonding material are arranged in a concave cavity formed in the wall; at least one groove portion is formed on the inner wall, which passes through from the inner peripheral surface to the outer peripheral surface; on the outer peripheral side of the inner wall, an outer wall of the insulating material is formed, which rises from the substrate in a height direction in a manner of surrounding the concave cavity.
[0007] The manufacturing method of the mounting substrate disclosed in the present invention manufactures the mounting substrate by mounting electronic components on the above-mentioned circuit substrate, and after the constituent materials and the electronic components are arranged on the substrate, a pressure reflow device can be used to connect the electronic components to the terminals.
[0008] [Effects of the Invention] According to the present disclosure, a method for manufacturing a circuit substrate and a mounting substrate can be provided, which can suppress poor connection between the circuit substrate and electronic components and suppress contamination of the substrate. Simple diagram description
[0009] FIG. 1 is a schematic cross-sectional view showing an example of a mounting substrate including a circuit substrate according to an embodiment of the present disclosure. FIG. 2 is a schematic cross-sectional view showing an example of a circuit board according to an embodiment of the present disclosure. FIG. 3 is a top view of the circuit substrate. Figure 4 (a), (b) and (c) are views of the wall frame portion of the inner wall as viewed from the thickness direction. FIG. 5 (a) and (b) are cross-sectional views showing an example of a structure near a concave portion. FIG6 is a cross-sectional view of an example of the outer wall. FIG. 7 (a), (b), and (c) are schematic diagrams showing an example of a method for manufacturing a circuit substrate and a mounting substrate. FIG. 8 is a schematic diagram showing an example of a method for manufacturing a circuit substrate and a mounting substrate. Figure 9 (a), (b), (c), (d), (e), and (f) are schematic diagrams showing an example of a method for manufacturing a wall portion. FIG. 10 is a schematic cross-sectional view showing a circuit board of a comparative example. FIG. 11 is a diagram showing a circuit substrate of a modified example. FIG. 12 is a diagram showing a circuit substrate of a modified example. FIG. 13 is a diagram showing a circuit substrate of a modified example. FIG. 14 (a) and (b) are diagrams showing a circuit substrate of a variation. Figure 15 (a), (b), and (c) are diagrams showing a circuit substrate of a variation. Figure 16 (a), (b), and (c) are diagrams showing a circuit substrate of a variation. Figure 17 (a), (b), (c), and (d) are diagrams showing a circuit substrate of a variation example. Implementation
[0010] Referring to FIGS. 1 to 3 , the circuit substrate 3 of the embodiment of the present disclosure is described. FIG. 1 is a schematic cross-sectional view of a mounting substrate 1 including the circuit substrate 3 of the embodiment of the present disclosure. FIG. 2 is a schematic cross-sectional view of the circuit substrate 3 of the embodiment of the present disclosure. FIG. 3 is a top view of the circuit substrate 3.
[0011] As shown in FIG1 , a mounting substrate 1 includes an electronic component 2 and a circuit substrate 3. The mounting substrate 1 is formed by mounting the electronic component 2 on the circuit substrate 3 via a bonding material 4.
[0012] The electronic component 2 includes a main body 6 and a pair of terminals 7. The main body 6 is a member for performing the function of the electronic component 2. The terminal 7 is a metal portion formed on the main surface of the main body 6. As the material of the terminal 7, a metal such as Cu, Ti, Au, Ni, Sn, Bi, P, B, In, Ag, Zn, Pd, Mo, Pt, Cr, or an alloy of at least two selected from these metals is used. The electronic component 2 is composed of, for example, a micro LED. The micro LED is a component that emits light according to the input from the circuit substrate 3.
[0013] The circuit board 3 includes a substrate 8, an inner wall 9, an outer wall 40, and a pair of terminals 10 (a first terminal and a second terminal). The substrate 8 is a flat plate-shaped main body of the circuit board 3. The substrate 8 has a main surface 8a. The substrate 8 can be a printed circuit board for mounting each conductor pattern and each electronic component in the circuit board 3 on the main surface 8a. As a material of the substrate 8, a well-known resin material or ceramic material used for a printed circuit board can be used. In addition, in the following description, the XYZ coordinates set for the circuit board 3 are sometimes used for description. The X-axis direction (the second direction) is a direction parallel to the main surface 8a of the substrate 8, the Y-axis direction (the third direction) is a direction parallel to the main surface 8a of the substrate 8 and perpendicular to the X-axis direction, and the Z-axis direction (the first direction, the height direction) is a direction perpendicular to the main surface 8a of the substrate 8.
[0014] The inner wall 9 of the insulating material is arranged on the main surface 8a of the substrate 8. The inner wall 9 protrudes from the substrate 8 to the positive side in the Z-axis direction. As shown in Figure 3, in this embodiment, the inner wall 9 has wall frame parts 13A, 13B, 13C, and 13D arranged in a square shape. The wall frame parts 13A and 13B face each other in a state separated from each other in the X-axis direction and extend in parallel in the Y-axis direction. The wall frame part 13A is arranged on the positive side of the X-axis direction, and the wall frame part 13B is arranged on the negative side. The wall frame parts 13C and 13D face each other in a state separated from each other in the Y-axis direction and extend in parallel in the X-axis direction. The wall frame part 13C is arranged on the positive side of the Y-axis direction, and the wall frame part 13D is arranged on the negative side. The wall frame part 13A connects the ends of the positive side of the wall frame parts 13C and 13D in the X-axis direction to each other. The wall frame portion 13B connects the ends of the negative side of the wall frame portions 13C and 13D in the X-axis direction to each other. Thus, the inner wall 9 has a rectangular frame-shaped structure when viewed from the height direction. The wall frame portions 13A and 13B constitute the short side, and the wall frame portions 13C and 13D constitute the long side. In addition, the size is not particularly limited, and the size of the wall frame portions 13A and 13B in the Y-axis direction can be set to 10 μm~60 μm. The size of the wall frame portions 13C and 13D in the X-axis direction can be set to 15 μm~70 μm. The size of the short side of the inner circumferential surface inside the inner wall 9 is 8 μm or more and can be set to 44 μm or less. The size of the long side of the inner circumferential surface inside the inner wall 9 is 15 μm or more and can be 68 μm or less. The size of the short side of the inner circumference of the inner wall 9 is the size of the inner circumference 13a of the wall frame 13C and the inner circumference 13a of the wall frame 13D in the Y-axis direction. The size of the long side of the inner circumference of the inner wall 9 is the size of the inner circumference 13a of the wall frame 13A and the inner circumference 13a of the wall frame 13B in the X-axis direction. As the material of the inner wall 9, resin materials such as epoxy resin, acrylic resin, phenolic resin, melamine resin, urea-formaldehyde resin, alkyd resin, etc. are used. It is particularly preferred that epoxy resin and acrylic resin are used as the material of the inner wall 9.
[0015] The outer wall 40 of the insulating material is arranged on the main surface 8a of the substrate 8. The inner wall 9 protrudes from the substrate 8 to the positive side in the Z-axis direction. The outer wall 40 is formed to surround the concave cavity 11 on the outer peripheral side of the inner wall 9. As shown in FIG. 3, in this embodiment, the outer wall 40 has wall frame parts 41A, 41B, 41C, and 41D arranged in a square shape. The wall frame parts 41A and 41B face each other in a state separated from each other in the X-axis direction and extend in parallel in the Y-axis direction. The wall frame part 41A is arranged on the positive side in the X-axis direction, and the wall frame part 41B is arranged on the negative side. The wall frame part 41A is separated and faces the wall frame part 13A of the inner wall 9 on the positive side in the X-axis direction. The wall frame part 41B is separated and faces the wall frame part 13B of the inner wall 9 on the negative side in the X-axis direction. The wall frame parts 41C and 41D face each other in a state separated from each other in the Y-axis direction and extend in parallel in the X-axis direction. The wall frame portion 41C is arranged on the positive side of the Y-axis direction, and the wall frame portion 41D is arranged on the negative side. The wall frame portion 41C is separated and opposite to the wall frame portion 13C of the inner wall 9 on the positive side of the Y-axis direction. The wall frame portion 41D is separated and opposite to the wall frame portion 13D of the inner wall 9 on the negative side of the Y-axis direction. The wall frame portion 41A connects the ends of the wall frame portions 41C and 41D on the positive side of the X-axis direction to each other. The wall frame portion 41B connects the ends of the wall frame portions 41C and 41D on the negative side of the X-axis direction to each other. By this, the outer wall 40 has a rectangular frame-shaped structure when viewed from the height direction. The wall frame portions 41A and 41B constitute the short sides, and the wall frame portions 41C and 41D constitute the long sides. In addition, the size of the XY plane of the outer wall 40 is not particularly limited, as long as it is a size that satisfies the volume relationship described later between the inner wall 9 and the like. The material of the outer wall 40 can be the same material as that described for the inner wall 9. However, different materials can be used for the outer wall 40 and the inner wall 9 according to the manufacturing process.
[0016] As shown in FIG. 1 to FIG. 3 , the terminal 10 is a metal portion provided on the main surface 8a of the substrate 8. As the material of the terminal 10, Ni, Cu, Ti, Cr, Al, Mo, Pt, Au, or an alloy of at least two selected therefrom is used. On the upper surface of the terminal 10, a conductive film 12 is formed. As the material of the conductive film 12, a film of Ti, Cu, Ni, Al, Mo, Cr, Ag, etc. or a film formed by mixing metal particles and a binder is used.
[0017] The bonding material 4 is a member for bonding the terminal 7 of the electronic component 2 and the terminal 10 of the circuit substrate 3. The bonding material 4 is formed by thermally bonding the bonding material 4A on the circuit substrate 3 side and the bonding material 4B on the electronic component 2 side to form an integral body (see FIG8 ). The bonding material 4 may contain Sn or may be formed of an alloy containing Sn. However, the bonding material 4 is not necessarily limited to that containing Sn. The bonding material 4 may be formed of an alloy containing, in addition to Sn, an element that lowers the melting point of Sn. Examples of the element that lowers the melting point of Sn include Bi. The bonding material 4 functions as a solder. Thus, between the substrate 8 and the main body 6, the terminal 10, the conductive film 12, the bonding material 4, and the terminal 7 are stacked in order from the upper surface of the substrate 8. In addition, in this portion, soldering is performed after the terminal 10, the conductive film 12, the bonding material 4, and the terminal 7 are stacked. Therefore, after welding, a structure in which the metals of the terminal 10, the conductive film 12, the bonding material 4, and the terminal 7 are melted and diffused is formed. This structure after welding may be a structure including a brittle intermetallic compound (IMC). In the case of the presence of a brittle structure, i.e., an intermetallic compound, it is easy to break due to stress from the outside, so the reliability is easy to reduce. Therefore, by surrounding the electronic component 2 with the inner wall 9, the effect of protecting the electronic component 2 is achieved.
[0018] A cavity 11 is formed in the inner wall 9. The cavity 11 is formed by a through hole that penetrates the inner wall 9 in the height direction. As a result, the upper surface of the substrate 8 is exposed at the bottom side of the cavity 11. The cavity 11 is formed into a rectangular shape when viewed from the height direction (see FIG. 3). The terminal 7, the terminal 10, the conductive film 12, and the bonding material 4 are arranged in the cavity 11 surrounded by the inner wall 9, and are surrounded by the inner wall 9. A slight gap is formed between the terminal 7, the terminal 10, the conductive film 12, and the bonding material 4, and the inner peripheral surface 13a of the square wall frame parts 13A, 13B, 13C, and 13D constituting the cavity 11.
[0019] In the cavity 11, a constituent material 20 is arranged between the electronic component 2 and the bonding material 4 and the inner wall 9. Thus, by supporting the constituent material 20, the electronic component 2 can be less likely to be peeled off from the circuit substrate 3. In addition, the force applied to the electronic component 2, the bonding material 4 and the terminals 7 and 10 can be alleviated, thereby improving reliability. As the material of the constituent material 20, for example, epoxy resin, acrylic resin, phenolic resin, melamine resin, urea resin, alkyd resin or a mixture thereof, or a mixture of the above resin materials and SiOx, ceramics, etc. is used. It is particularly preferred that epoxy resin or acrylic resin is used as the material of the constituent material 20. The viscosity of the constituent material 20 during filling is preferably 1 Pa to 20 Pa, and more preferably 5 Pa to 10 Pa.
[0020] As shown in FIG. 2 , the circuit substrate 3 has a structure in which the electronic component 2 and the constituent material 20 are removed from the mounting substrate 1 shown in FIG. 1 . In addition, in the circuit substrate 3 , a bonding material 4A containing a metal element is arranged on the upper side of the terminal 10 (the upper surface of the conductive film 12 ). The circuit substrate 3 includes: a bonding material 4A (first bonding material) arranged on the side of the terminal 10 in the X-axis direction, and a bonding material 4A (second bonding material) arranged on the negative side of the terminal 10 in the X-axis direction. These bonding materials 4A are configured as a part of the bonding material 4 at the stage before the electronic component 2 and the mounting substrate 1 are thermally bonded as described above. In the state of the circuit substrate 3 , a pair of terminals 10 , the conductive film 12 and the bonding material 4A are arranged in the inner wall 9 formed of an insulating material.
[0021] As shown in FIG3 , the wall frame parts 13A, 13B, 13C, and 13D have at least one groove part 30 that penetrates from the inner peripheral surface 13a to the outer peripheral surface 13b. In addition, for the wall frame parts 13A and 13B, the X-axis direction is the thickness direction. Therefore, the groove part 30 of the wall frame parts 13A and 13B extends along the X-axis direction and penetrates the wall frame parts 13A and 13B. For the wall frame parts 13C and 13D, the Y-axis direction is the thickness direction. Therefore, the groove part 30 of the wall frame parts 13C and 13D extends along the Y-axis direction and penetrates the wall frame parts 13C and 13D. In addition, the groove part 30 only needs to be formed in at least one of the wall frame parts 13A, 13B, 13C, and 13D. In addition, a plurality of groove parts 30 can be formed in any one of the wall frame parts 13A, 13B, 13C, and 13D. Furthermore, a groove 30 (details will be described later) may be formed at the corners of each wall frame portion 13A, 13B, 13C, 13D.
[0022] Next, with reference to (a) (b) (c) of FIG. 4, the structure of the situation of observing the wall frame portion 13D from the thickness direction is described. FIG. 4 (a) is a diagram of observing the wall frame portion 13D from the thickness direction, i.e., the Y-axis direction. In addition, the wall frame portion 13D is shown in FIG. 4 (a) (b) (c), but the same description is also established for other wall frame portions 13A, 13B, and 13C. As shown in FIG. 4 (a), when observing from the thickness direction, i.e., the Y-axis direction, of the wall frame portion 13D, the groove portion 30 extends from the front end portion 13c of the height direction of the wall frame portion 13D (in this embodiment, the Z-axis direction) to the substrate 8 side (the negative side of the Z-axis direction). The groove portion 30 has a bottom surface 30a and a pair of side surfaces 30b. The bottom surface 30a is formed on the negative side of the Z-axis direction relative to the front end portion 13c. A pair of side surfaces 30b extend from both ends of the bottom surface 30a in the X-axis direction to the front end portion 13c. In the example shown in FIG. 4( a ), the groove 30 reaches the main surface 8 a of the substrate 8 . In this case, the bottom surface 30 a of the groove 30 is formed by the main surface 8 a of the substrate 8 . In this configuration, the region on the negative side of the X-axis direction of the wall frame portion 13D and the region on the positive side of the X-axis direction are separated by the groove 30 .
[0023] As shown in FIG. 4( b ), the width of the groove 30 in the width direction, i.e., the X-axis direction, is greater on the front end 13c side than on the bottom surface 30a side. The width of the groove 30 at the front end 13c is greater than the width of the groove 30 at the bottom surface 30a. In the example shown in FIG. 4( b ), the groove 30 opens wider in the X-axis direction as it approaches the front end 13c side. The pair of side surfaces 30b are inclined so that the distance between them increases as they approach the positive side in the Z-axis direction.
[0024] As shown in FIG. 4( c ), the bottom surface 30a of the groove portion 30 may also be arranged at a position separated from the substrate 8. A member of the wall frame portion 13D exists between the bottom surface 30a and the main surface 8a of the substrate 8. In addition, the height dimension of the groove portion 30 when the bottom surface 30a is separated from the substrate 8 is not particularly limited and may be 1 μm or more.
[0025] In addition, the width of the groove portion 30 is not particularly limited as long as it is not too small to discharge the excess constituent material 20. For example, the width of the groove portion 30 can be more than 1 μm, and can also be more than 4 μm. In addition, as long as the wall frame portion 13 has a size that can position the electronic component 2, the width of the groove portion 30 can be set larger (for example, refer to (d) of Figure 17). In this case, the required constituent material 20 is also maintained, and the excess portion can be discharged. In addition, when the bottom surface 30a is arranged at a position separated from the substrate 8, the bottom surface 30a can be curved.
[0026] The relationship between the size of the inner wall 9 and the outer wall 40 is described. As shown in FIG. 2 , the relationship between the thickness Ti of the inner wall 9 and the thickness To of the outer wall 40 is not particularly limited. As described later, in the case of the outer wall 40 formed by a pattern formed by a continuous insulating material (substantially uniformly formed) covering the main surface 8a of the substrate 8, the thickness To is very large. In the case of the frame-shaped outer wall 40 as shown in FIGS. 1 to 3 , the thickness Ti of the inner wall 9 can be greater than the thickness To of the outer wall 40. The thicknesses Ti and To are the dimensions of the wall frame portions 13A, 13B, 41A, and 41B in the X-axis direction. The thicknesses Ti and To are the dimensions of the wall frame portions 13C, 13D, 41C, and 41D in the Y-axis direction. Although not particularly limited, the thickness Ti of the inner wall 9 can be set to be greater than 1 μm and less than the height Hi of the inner wall 9. The thickness To of the outer wall 40 can be set to be greater than 1 μm and less than the height Ho of the outer wall 40. In addition, as described later, the cross-sectional shape of the wall frame portions 13A, 13B, 13C, 13D, 41A, 41B, 41C, and 41D is sometimes not constant in the height direction (for example, refer to (a) of Figure 5). When comparing the thicknesses Ti and To, the thicknesses at the bottom, that is, the position of the substrate 8, can be compared.
[0027] The height Hi of the inner wall 9 may be greater than the height Ho of the outer wall 40. The heights Hi and Ho are dimensions of the wall frame portions 13A, 13B, 13C, 13D, 41A, 41B, 41C, and 41D in the height direction. Although not particularly limited, the height Hi of the inner wall 9 may be set to be greater than 4 μm and less than 10 μm. The height Ho of the outer wall 40 may be set to be greater than 1 μm and less than the height Hi of the inner wall 9. In the case where the heights of the front end portions 13c and 41c of each wall are not uniform, the heights Hi and Ho are defined by the maximum height.
[0028] As shown in FIG3, when viewed from the height direction, a rectangular reference shape T1 with the smallest area circumscribed with the inner peripheral surface 13a of the concave cavity 11 of the inner wall 9 is set. When viewed from the height direction, a rectangular reference shape T2 with the largest area circumscribed with the outer peripheral surface 13b of the inner wall 9 is set. In this embodiment, the reference shapes T1 and T2 are rectangular. These reference shapes T1 and T2 are set imaginarily and are indicated by imaginary lines in FIG3. The volume obtained by multiplying the reference shape T1 by the height Hi of the inner wall 9 (see FIG2) is set as the volume S1 in the concave cavity 11.
[0029] A rectangular annular space SP is formed between the inner wall 9 and the inner circumferential surface 41a of the outer wall 40. The constituent material 20 discharged from the cavity 11 is accommodated in the space SP. The area of the space SP when viewed from the height direction is the area of the region between the rectangle drawn by the inner circumferential surface 41a of the outer wall 40 and the reference shape T2 on the outer circumferential side of the inner wall 9. The height of the space SP is the lower height of the inner wall 9 and the outer wall 40. In the example shown in FIG. 2 , the relationship between the heights of the inner wall 9 and the outer wall 40 is "Hi≧Ho". The region lower than the reference position SP1 indicating the height Ho of the outer wall 40 is the space SP. Therefore, the volume of the space SP obtained by multiplying the aforementioned area by the height Ho of the outer wall 40 is set to S2.
[0030] As shown in FIG1 , an electronic component 2 is installed in the cavity 11. The electronic component 2 is a member formed by extruding the constituent material 20 filled in the cavity 11 before bonding. The maximum volume of the extruded constituent material 20 can be regarded as the volume occupied by the electronic component 2 in the cavity 11 after bonding. The volume of the portion of the electronic component 2 that enters the cavity 11, that is, the area (referred to as PE) disposed at a position lower than the front end portion 9a of the inner wall 9 is set as the volume occupied by the electronic component 2 in the cavity 11, and this volume is referred to as S3.
[0031] As described above, the volume of the cavity 11 is set to S1, the volume of the space SP between the inner wall 9 and the outer wall 40 is set to S2, and the volume occupied by the electronic components installed in the cavity 11 is set to S3. In this case, S2 can be less than S1 (S2≦S1). In addition, S2 can be greater than S3 (S2≧S3).
[0032] Here, as shown in FIG. 5( a ), any one of the surfaces extending in the height direction of at least one of the inner wall 9 and the outer wall 40 has a concave portion 45 at a position on the substrate 8 side in the height direction. A concave cavity material 46 covering the substrate 8 may be provided at the position of the concave portion 45. The surfaces extending in the height direction in the inner wall 9 are the inner peripheral surface 13a, the outer peripheral surface 13b, and the side surface 30b of the groove portion 30. The surfaces extending in the height direction in the outer wall 40 are the inner peripheral surface 41a and the outer peripheral surface 41b. It is sufficient if any one of the surfaces 13a, 13b, 30b, 41a, 41b has a concave portion 45. In addition, the concave portion 45 may not be provided in the entire area of each surface 13a, 13b, 30b, 41a, 41b, but may be provided in a part. The concave portion 45 is formed at a position closer to the substrate 8 than the front end portions 13c, 41c in the height direction. The concave portion 45 is formed at a position separated upward from the main surface 8a of the substrate 8. Therefore, a concave cavity material 46 is formed between the concave portion 45 and the main surface 8a of the substrate 8. The concave portion 45 can extend along the direction in which the surfaces 13a, 13b, 30b, 41a, and 41b extend along the plane direction of the substrate 8. For example, in the case where the inner peripheral surface 13a of the wall frame portion 13A has the concave portion 45, the concave portion 45 can be formed to extend along the Y-axis direction. In addition, in the case where the side surface 30b of the groove portion 30 of the wall frame portion 13A has the concave portion 45, the concave portion 45 can be formed to extend along the X-axis direction.
[0033] The opening width of the concave portion 45, that is, the size of the dimension w1 in the height direction of the opening, is not particularly limited and can be set to be greater than 0 μm and less than 3 μm. The thickness of the concave cavity material 46, that is, the size of the dimension w2 in the height direction, is not particularly limited and can be set to be greater than 0 μm and less than 1 μm. The depth dimension D1 of the concave portion 45 is not particularly limited and can be set to be greater than 0 μm and less than 3 μm. In addition, in the example shown in FIG. 5 (b), the concave portion 45 is formed at a position directly above the substrate 8, and the concave cavity material 46 is not formed. This structure is preferably the structure of FIG. 5 (a) because the bonding strength between the walls 9 and 40 and the substrate 8 is reduced. However, the structure shown in FIG. 5 (b) is not excluded.
[0034] Referring to FIG6 , the cross-sectional shape of the frame-shaped outer wall 40 is described. The thickness of the front end portion 41c in the height direction of the wall frame portion 41 of the outer wall 40 is set to Tto, the thickness of the end portion 41d on the substrate 8 side is set to Tbo, and the height of the aforementioned wall frame portion of the outer wall is set to Ho. In the case of a tapered shape in which the end portion 41d on the substrate 8 side is thicker than the front end portion 41c as shown in FIG6 , the condition that Tbo is a tapered shape greater than Tto and greater than Ho is established. In addition, in the case of a shape as shown in FIG5 (b), there is also a case in which the front end portion 41c is thicker than the end portion 41d on the substrate 8 side. In this case, the condition that Tto is a tapered shape greater than Tbo and greater than Ho can be established.
[0035] Referring to FIG. 7 (a), (b), (c) and FIG. 8, the manufacturing method of the circuit board 3 and the mounting substrate 1 is described. First, as shown in FIG. 7 (a), the terminal 10 is formed on the upper surface of the substrate 8. Next, as shown in FIG. 7 (b), the inner wall 9 and the outer wall 40 are formed on the substrate 8. Thus, the circuit board 3 is completed. In FIG. 7 (b), the conductive film 12 and the bonding material 4A are formed on the upper surface of the terminal 10. Next, as shown in FIG. 7 (c), the constituent material 20 is arranged on the substrate 8 by filling the concave cavity 11 with the constituent material 20. Then, the electronic component 2 is held by the holding member, and the electronic component 2 is mounted on the concave cavity 11. Next, as shown in FIG. 8, the electronic component 2 is pressed into the concave cavity 11 by the pressurized reflow device 49, and the bonding material 4A and the bonding material 4B are brought into contact inside the constituent material 20. At this time, a part of the constituent material 20 is pushed out toward the groove portion 30 (refer to FIG. 3). At this time, the extruded constituent material 20 is accommodated in the space SP between the outer wall 40 and the inner wall 9. Next, by heating, the bonding material 4B of the electronic component 2 and the bonding material 4A of the base material 8 are bonded. Thus, the mounting substrate 1 is completed.
[0036] Next, referring to FIG. 9 (a), (b), (c), (d), (e), (f), the method for forming the inner wall 9 and the outer wall 40 having the groove 30 is described. First, as shown in FIG. 9 (a), the inner wall 9 and the outer wall 40 are formed on the substrate 8. Next, as shown in FIG. 9 (b), a portion of the inner wall 9 is processed by irradiating the inner wall 9 with a laser device 51. Thus, as shown in FIG. 9 (c), the groove 30 is formed on the inner wall 9.
[0037] Alternatively, as shown in FIG. 9( d ), a resist 52 is formed on the substrate 8. Next, as shown in FIG. 9( e ), exposure is performed using a glass mask 53 having a pattern corresponding to the shape of the inner wall 9 having the groove 30 and the shape of the outer wall 40 . As shown in FIG. 9( f ), the inner wall 9 and the outer wall 40 having the groove 30 are formed by developing the exposed resist 52 .
[0038] Next, the functions and effects of the method for manufacturing the circuit board 3 and the mounting board 1 of this embodiment will be described.
[0039] First, referring to FIG. 10 , the circuit board 103 of the comparative example is described. The inner wall 9 of the circuit board 103 does not have the groove 30 and the outer wall 40 described above. If the electronic component 2 is placed in the inner wall 9 using a holding member after the inner wall 9 is filled with the constituent material 20, and the electronic component 2 is pressed in using a pressurized reflow device, the electronic component 2 cannot be fully pressed in due to the influence of the excess constituent material 20. In this case, reflow is performed while the bonding material 4B of the electronic component 2 and the bonding material 4A of the circuit board 3 are kept separated, and poor connection between the bonding material 4A of the circuit board 3 and the electronic component 2 may occur.
[0040] In view of this, in the circuit board 3 of the present embodiment, a pair of terminals 10 (first terminal and second terminal) are arranged in the cavity 11 surrounded by the inner wall 9. Here, the inner wall 9 has at least one groove portion 30 penetrating from the inner peripheral surface 13a to the outer peripheral surface 13b. In this case, the constituent material 20 is arranged in the cavity 11, the electronic component 2 is mounted using a holding member, and the electronic component 2 is pressed into the interior of the cavity 11 using a pressurized reflow device and heated to be bonded to the circuit board 3. When the electronic component 2 is mounted on the circuit board 3, the excess constituent material 20 can be discharged to the outside of the inner wall 9 through the groove portion 30. Thereby, the electronic component 2 can be fully pressed into the cavity 11 by the pressurization process using the pressurized reflow device, and can be in contact with the bonding material 4. Furthermore, on the outer peripheral side of the inner wall 9, an outer wall 40 of an insulating material that rises from the base material 8 in the Z-axis direction (first direction) is provided so as to surround the cavity 11. Therefore, the outer wall 40 can enclose the excess constituent material 20 discharged through the groove portion 30, thereby preventing the constituent material 20 from spreading on the main surface 8a of the substrate 8. As described above, poor connection between the bonding material 4 of the circuit board 3 and the electronic component 2 can be prevented, and contamination of the substrate 8 can be prevented.
[0041] The circuit board 3 may include a bonding material 4A (first bonding material) containing a metal element disposed on the terminal 10A, and a bonding material 4A (second bonding material) containing a metal element disposed on the terminal 10B. In this case, the electronic component 2 can be mounted on the terminals 10A and 10B via the bonding material 4A.
[0042] The height Hi of the inner wall 9 may be greater than the height Ho of the outer wall 40. In this case, by increasing the height of the inner wall 9, the electronic component 2 can be easily pressurized against the cavity 11 of the inner wall 9.
[0043] When the volume of the space between the inner wall 9 and the outer wall 40 is set as S2 and the volume occupied by the electronic components installed in the cavity is set as S3, S2 can be greater than S3. In this case, the space SP between the outer wall 40 and the inner wall 9 can ensure the volume required to accommodate the constituent material 20 discharged from the cavity 11.
[0044] A concave portion 45 may be formed on any one of the surfaces extending along the Z-axis direction of at least one of the inner wall 9 and the outer wall 40 at a position on the substrate 8 side in the Z-axis direction, and a concave cavity material 46 covering the substrate 8 may be provided at the position of the concave portion 45. According to this shape, the concave portion 45 at the substrate 8 side may function as a guide groove for the constituent material 20 to pass through. Therefore, the fluidity of the constituent material 20 may be improved.
[0045] When the thickness of the front end portion 41c of the wall frame portion 41 of the outer wall 40 in the Z-axis direction is Tto, the thickness of the end portion 41d on the substrate side is Tbo, and the height of the wall frame portion 41 of the outer wall 40 is Ho, the condition of a tapered shape where Tbo is greater than Tto and greater than Ho is established. This configuration can be adopted when the outer wall 40 is formed in a frame shape.
[0046] When viewed from the thickness direction of the wall frame 13 of the inner wall 9, the groove 30 extends from the front end of the wall frame 13 in the Z-axis direction toward the substrate 8, and the width of the groove 30 in the width direction orthogonal to the thickness direction and the Z-axis direction may be larger on the front end 13c side than on the bottom surface 30a side. In this case, the flow resistance is increased by narrowing the groove 30 on the substrate 8 side, and the required constituent materials are retained, and the excess constituent materials are easily discharged by expanding the groove 30 on the front end side.
[0047] The manufacturing method of the mounting substrate 1 of this embodiment is to manufacture the mounting substrate 1 by mounting the electronic component 2 on the above-mentioned circuit substrate 3. After the constituent material 20 is arranged on the substrate 8 and the electronic component 2 is arranged, the electronic component 2 can be joined to the terminal 10 using a pressurized reflow device 49.
[0048] In this case, the same functions and effects as those of the above-mentioned circuit substrate 3 can be obtained.
[0049] The present disclosure is not limited to the above-mentioned embodiments. For example, the number and arrangement of the terminals of the circuit substrate are not particularly limited. In addition, in the above-mentioned embodiments, one electronic component 2 is arranged in the inner wall 9, but a plurality of electronic components 2 may be arranged. The arrangement of the plurality of electronic components 2 is not particularly limited.
[0050] In the above-mentioned embodiment, the groove 30 is formed in each wall frame portion 13A, 13B, 13C, and 13D. Instead of or in addition to it, the groove 30 may be formed at the corner of the inner wall 9. For example, the structure shown in FIG. 11 may be adopted. In the example shown in FIG. 11, the groove 30 is formed at the square corner of the inner wall 9 in a rectangular frame shape. The line connecting the corners of the imaginary reference shapes T1 and T2 set for the inner wall 9 is set as the reference line SL. At this time, the groove 30 may extend along the direction in which the reference line SL extends. Thereby, the groove 30 penetrates the inner wall 9 at the position of the corner of the reference shape T1 on the inner circumference side and the position of the corner of the reference shape T2 on the outer circumference side. In addition, the groove 30 formed at the corner may also be formed with a concave portion 45 as shown in FIG. 5 (a) (b).
[0051] The structure of the outer wall 40 is not particularly limited, and the structure shown in FIG. 12 may be adopted. In the example shown in FIG. 12, the outer wall 40 has a pattern formed by a continuous insulating material covering the main surface 8a of the substrate 8 (formed in a substantially uniform manner), instead of having a frame-like shape. The pattern is formed by coating the insulating material on the main surface 8a of the substrate 8 in a manner of covering it in a continuous state. In addition, in the following description, this pattern is sometimes referred to as a continuous pattern, and the film formed by this pattern is referred to as a continuous film. The outer wall 40 of the continuous pattern, for example, as shown in FIG. 15 (c), extends to the outer wall 40 of the adjacent cavity 11 and has an integrated shape. That is, it is a structure such that there is no interruption of the outer wall 40 between the cavity 11 and the adjacent cavity 11. Not limited to the periphery of the cavity 11, the outer wall 40 can protect the surface of the substrate 8 in the case of covering the surface of the substrate 8 over a wide range. When the area between the concave cavities 11 is covered with the outer wall 40 without any gap, the surface of the substrate 8 in the area can be protected by the outer wall 40. The vicinity of the edge of the substrate 8 can be covered by the outer wall 40 or not.
[0052] Here, when the outer wall 40 is composed of a wide film, that is, a continuous film, etc., as shown in FIG13, the end 41d on the substrate 8 side of the inner peripheral surface 41a of the outer wall 40 in the height direction can be arranged on the inner peripheral side relative to the front end 41c. In FIG13, the position PG2 of the end 41d on the substrate 8 side of the inner peripheral surface 41a is arranged on the inner peripheral side relative to the position PG1 of the front end 41c. At this time, in the outer peripheral surface 13b of the inner wall 9, the end 13d on the substrate 8 side is arranged on the outer peripheral side relative to the front end 13c.
[0053] As shown in (a) (b) of FIG. 14 and (a) (b) (c) of FIG. 15, various variations can be adopted as the structure of the outer wall 40. As shown in (a) of FIG. 14, a plurality of inner walls 9 can be provided inside the outer wall 40. That is, the outer wall 40 can collect the concave cavity 11 surrounding the plurality of inner walls 9. Specifically, between the wall frame portion 41C and the wall frame portion 41D, the plurality of (three) inner walls 9 are arranged in parallel. The wall frame portion 41A and the wall frame portion 41B collect and sandwich the plurality of inner walls 9 arranged in series in the opposite direction.
[0054] In FIG. 14 (a), when viewed from the height direction, the area of the concave cavity 11 in each inner wall 9 is set as SA1, and the total area between the plurality of n inner walls 9 and the outer wall 40 is set as SA2. The area SA1 is the area of the reference shape T1 on the inner circumference relative to the inner wall 9. SA2 is the value obtained by subtracting the total of n portions of the area of the reference shape T2 on the outer circumference of the inner wall 9 from the area of the rectangle formed by the inner circumference 41a of the outer wall 40. In FIG. 14 (a), since three inner walls 9 are provided, "n=3". At this time, the following equations (1) and (2) are established. In this case, the outer wall 40 can accommodate the constituent materials 20 discharged from the plurality of inner walls 9 in batches. In addition, the space between the outer wall 40 and the plurality of inner walls 9 can ensure the volume required to accommodate the discharged constituent materials 20. SA2≧(n×SA1) / 3 …(1) SA2≦n×SA1 …(2)
[0055] As shown in FIG. 14( b), the outer wall 40B formed by the continuous film can be combined with the frame-shaped outer wall 40A. In FIG. 14( b), two inner walls 9 are surrounded by the outer wall 40A of the continuous film, and one inner wall 9 is surrounded by the frame-shaped outer wall 40B. The outer wall 40Aa of the outer wall 40A of the continuous film corresponding to one inner wall 9 and the outer wall 40Ab corresponding to the other inner wall 9 are connected to each other. Thus, the outer wall 40A is constituted as a film pattern including a plurality of outer walls 40Aa and 40Ab.
[0056] In (a) and (b) of FIG. 14, an example is shown in which the inner walls 9 are arranged in a row surrounded by the outer wall 40. As shown in (a), (b), and (c) of FIG. 15, the inner walls 9 may be arranged in a plurality of rows surrounded by the outer wall 40. The number of inner walls 9 in each row and the number of rows are not limited, but here, two rows of the three arranged inner walls 9 are provided. In the example shown in (a) of FIG. 15, the inner walls 9 in the plurality of rows are collectively surrounded by one outer wall 40.
[0057] In the example shown in (b) of FIG. 15 , the outer wall 40C of the continuous film surrounds the inner wall 9 of one row, and the outer wall 40D of the continuous film surrounds the inner wall 9 of another row. The outer wall 40C is formed as a pattern of a continuous film including a plurality of outer walls 40Ca, 40Cb, and 40Cc. The outer wall 40D is formed as a pattern of a continuous film including a plurality of outer walls 40Da, 40Db, and 40Dc. In the example shown in (c) of FIG. 15 , the outer wall 40E of the continuous film surrounds the inner wall 9 of two rows. The outer wall 40E is formed as a pattern of a continuous film including a plurality of outer walls 40Ea, 4Eb, 40Ec, 40Ed, 40Ee, and 40Ef.
[0058] In the above-mentioned embodiments and variations, the outer wall 40 does not contact the inner wall 9. However, within the scope of obtaining the effect of the present disclosure, the outer wall 40 may be in contact with the inner wall 9 at a portion. In this case, the outer wall 40 can support the inner wall 9 under pressure. For example, the structure shown in (a), (b), (c) of FIG. 16 and (a), (b), (c), (d) of FIG. 17 may be adopted. In addition, (a), (b), (c) of FIG. 16 and (a), (b), (c), (d) of FIG. 17 illustrate a structure in which one outer wall 40 surrounds one inner wall 9, but such structures may be adopted in the structures of (a), (b) of FIG. 14 and (a), (b), (c) of FIG. 15.
[0059] At least one of the square wall frame portions 41 of the outer wall 40 can be in contact with the wall frame portion 13 of the inner wall 9 to support it. In the example shown in (a) of FIG. 16 , the wall frame portion 41B supports the wall frame portion 13B. In this structure, a space SP is formed between the wall frame portion 41B and the wall frame portion 13B. In this state, the outer wall 40 is in contact with the inner wall 9 at a part and surrounds the concave cavity 11. In this case, the contamination range of the constituent material 20 to the substrate 8 can be narrowed outside the wall frame portion 13B. In the example shown in (b) of FIG. 16 , the wall frame portion 41B is in contact with the wall frame portion 13B via the spacer 49. In this structure, a space SP is formed between the wall frame portion 41B and the wall frame portion 13B. In the example shown in (c) of FIG. 16 , the width of the wall frame portion 13B supported by the spacer 49 is reduced in accordance with the shape of the spacer 49. Therefore, the width of the groove portion 30 on both sides of the wall frame portion 13B becomes larger.
[0060] As shown in (a), (b), (c), and (d) of FIG. 17 , a plurality of wall frame portions 41 in the square wall frame portion 41 can contact the wall frame portion 13 of the inner wall 9. In the example shown in (a) of FIG. 17 , the wall frame portions 41A and 41B in two directions support the wall frame portions 13A and 13B. This structure forms a structure in which a space SP is formed at two locations between the wall frame portions 41C and 41D and the wall frame portions 13C and 13D. In this state, the outer wall 40 contacts the inner wall 9 in two directions and surrounds the concave cavity 11. In the example shown in (b) of FIG. 17 , the wall frame portions 41A, 41B, and 41C in three directions support the wall frame portions 13A, 13B, and 13C. This structure forms a structure in which a space SP is formed at one location between the wall frame portion 41D and the wall frame portion 13D. In this state, the outer wall 40 contacts the inner wall 9 in three directions and surrounds the concave cavity 11. In the example shown in (c) of FIG. 17 , the square wall frame portions 41A, 41B, 41C, 41D are in contact with the wall frame portions 13A, 13B, 13C, 13D via the spacer 49. In this configuration, a space SP is formed between the square wall frame portion 41 and the wall frame portion 13. In the example shown in (c) of FIG. 17 d, the width of the wall frame portions 13A, 13B, 13C, 13D supported by the spacer 49 is reduced in accordance with the shape of the spacer 49.
[0061] [Example] The embodiment of the mounting substrate of the present disclosure is described. In addition, the present disclosure is not limited to the following embodiments.
[0062] First, the mounting substrates of Examples 1 to 7 are manufactured by the following manufacturing method. First, the inner wall 9 having the groove 30 and the outer wall 40 are formed on the substrate 8 so as to surround the terminal 10 and the bonding material 4, thereby obtaining the circuit substrate 3. Next, the constituent material 20 is filled in the circuit substrate 3, and the LED chip is mounted as the electronic component 2. Next, the mounting substrate 1 in this state is pressurized at 0.01 MPa by the pressurized reflow device 49, and reflowed at 150° C. to 190° C. In this way, the circuit substrate 3 and the electronic component 2 are bonded. Various conditions of Examples 1 to 7 are shown in Tables 1 and 2 below. In addition, the "inner wall (inner) opening width W1" in Table 1 is the dimension of the long side direction of the reference shape T1 on the inner circumference side of the inner wall 9 (refer to FIG. 3). The "inner wall (inner) opening width L1" is the dimension of the short side direction of the reference shape T1 on the inner circumference side of the inner wall 9 (refer to FIG. 3). "Inner wall frame width bottom" is the thickness Ti of the base material 8 at the wall frame portion 13 of the inner wall 9 (refer to FIG. 2). "Inner wall (outer) opening width W2" is the dimension of the long side direction of the reference shape T2 on the outer peripheral side of the inner wall 9 (refer to FIG. 3). "Inner wall (outer) opening width L2" is the dimension of the short side direction of the reference shape T2 on the outer peripheral side of the inner wall 9 (refer to FIG. 3). "Inner wall height" is the height Hi of the inner wall 9 (refer to FIG. 2). "Groove opening position" indicates the position of the groove 30. "Up, down, left, and right" means that the groove 30 is located at the center of each of the wall frame portions 13A, 13B, 13C, and 13D, and "four corners" means that the groove 30 is located at the corner where the wall frame portions 13A, 13B, 13C, and 13D intersect. "Groove opening top width" is the dimension of the width of the groove 30 at the front end portion 13c. "Resist opening bottom" in Table 2 means the bottom width of the groove 30. "Margin" indicates the distance between the inner wall 9 and the outer wall 40. "Outer wall (inner) opening width W1" is the dimension in the long side direction of the rectangle drawn by the inner circumference 41a of the outer wall 40 (refer to FIG3). "Outer wall (inner) opening width L1" is the dimension in the short side direction of the rectangle drawn by the inner circumference 41a of the outer wall 40 (refer to FIG3). "Outer wall frame width bottom" is the thickness To at the position of the base material 8 of the wall frame portion 41 of the outer wall 40 (refer to FIG2). In addition, the embodiments (except for Embodiment 7) having the dimensions recorded have the structure of FIG11. Embodiments 3 and 6 recorded as "solid film" have the structure of FIG12 having a continuous film. "Outer wall height" is the height Ho of the outer wall 40 (refer to FIG2). "Inner wall outer wall junction" indicates whether the outer wall 40 has a portion joined to the inner wall 9. Embodiment 7 has the structure shown in FIG17 (a). [Table 1] Example Inner wall (inner) opening width W1 Inner wall (inner) opening width L1 Inner wall frame width bottom Inner wall (outer) opening width W2 Inner wall (outer) opening width L2 Inner wall height Slot opening position Groove opening top width μm μm μm μm μm μm - μm Example 1 29 19 7 43 33 7.5 Up, down, left, right 5 Example 2 29 19 7 43 33 7.5 Up, down, left, right 5 Example 3 29 19 7 43 33 7.5 Up, down, left, right 5 Example 4 19 12 7 33 26 7.5 Four Corners 5 Example 5 19 12 7 33 26 7.5 Four Corners 5 Example 6 19 12 7 33 26 7.5 Four Corners 5 Example 7 19 12 7 33 26 7.5 Four Corners 5 [Table 2] Example Resist opening bottom Margins Outer wall (inner) opening width W1 Outer wall (inner) opening width L1 Outer wall frame width bottom Outer wall height Inner wall and outer area joint - μm μm μm μm μm - Example 1 2 3 49 39 7 6.5 none Example 2 2 2 46 36 7 6.5 none Example 3 2 3 49 39 -(Solid film) 6.5 none Example 4 2 2 37 30 7 6.5 none Example 5 2 1 35 28 7 6.5 none Example 6 2 2 37 30 -(Solid film) 6.5 none Example 7 2 2 37 30 7 6.5 have Left and right sides
[0063] Table 3 below shows the evaluation results of Examples 1 to 7. In addition, the evaluation shown in Table 3 shows the evaluation results when the circuit substrates 3 of the number of samples recorded in the "Number of Mountings" were prepared and the electronic components 2 were mounted on these circuit substrates 3. "Constituent material flowing out of the outer wall" in Table 3 shows the results of samples in which the constituent material 20 flows out of the outer wall 40. In any of Examples 1 to 7, there is no flow. "Electronic component mounting failure" shows the results of failures in which the electronic components 2 cannot be mounted on the circuit substrate 3. In any of Examples 1 to 7, there is no failure. "Electronic component mounting rate" shows the ratio of samples in which the electronic components 2 can be mounted on the circuit substrate 3. In any of Examples 1 to 7, the mounting rate is 100%. "Pass" shows the number of samples that are all passed for each evaluation result. In any of Examples 1 to 7, all 28 samples are passed. In addition, "Inner wall internal volume" shown in Table 3 shows the volume S1 in the cavity 11. "Chip occupied volume" refers to the volume S3 occupied by the electronic component 2 in the cavity 11. "Inner-outer wall inner volume" refers to the volume S2 of the space SP (see FIG. 3 ) between the inner wall 9 and the outer wall 40. Examples 1 to 7 all satisfy the conditions of "S2≦S1" and "S2≧S3". [Table 3] Example Structural materials flow out of the outer wall Electronic parts loading failure Electronic parts loading rate Number of vehicles qualified Inner wall volume S1 Chip occupies volume S3 Inner-outer wall volume S2 - % μm 3 μm 3 μm 3 Example 1 none none 100 28 28 4132.5 1500 3198 Example 2 none none 100 28 28 4132.5 1500 1540.5 Example 3 none none 100 28 28 4132.5 1500 3198 Example 4 none none 100 28 28 1710 735 1638 Example 5 none none 100 28 28 1710 735 793 Example 6 none none 100 28 28 1710 735 1638 Example 7 none none 100 28 28 1710 735 962
[0064] [Form 1] A circuit substrate, comprising: a substrate having a main surface; The first terminal and the second terminal are arranged on the aforementioned main surface of the aforementioned substrate; and The inner wall of the insulating material is disposed on the aforementioned main surface of the aforementioned substrate; and The first and second terminals are disposed in a concave cavity surrounded by the inner wall; The inner wall has at least one groove extending from the inner circumference to the outer circumference; On the outer peripheral side of the inner wall, an outer wall of insulating material is provided on the main surface of the substrate in a manner of surrounding the concave cavity. [Form 2] A circuit substrate as in form 1, wherein the height of the inner wall is greater than the height of the outer wall. [Form 3] In the circuit substrate of form 1 or 2, when the volume of the space between the inner wall and the outer wall is set to S2 and the volume occupied by the electronic components installed in the cavity is set to S3, S2 is greater than S3. [Form 4] A circuit substrate as in any one of forms 1 to 3, wherein any one of the surfaces of at least one of the inner wall and the outer wall extending in a first direction orthogonal to the aforementioned main surface of the aforementioned substrate has a concave portion at a position on the aforementioned substrate side in the aforementioned first direction; and A cavity material covering the substrate is arranged at the position of the concave portion. [Form 5] A circuit substrate as in any one of forms 1 to 4, wherein the end of the inner peripheral surface of the outer wall on the side of the aforementioned substrate in the first direction orthogonal to the aforementioned main surface of the aforementioned substrate is arranged on the inner peripheral side more than the front end. [Form 6] A circuit substrate as in any one of forms 1 to 5, wherein the thickness of the front end portion of the wall frame portion of the outer wall in the first direction perpendicular to the front main surface of the substrate is set as Tto, the thickness of the end portion on the substrate side is set as Tbo, and the height of the front wall frame portion of the outer wall is set as Ho, The condition of a tapered shape where Tbo is greater than or equal to Tto and greater than or equal to Ho is satisfied. [Form 7] A circuit substrate as in any one of items 1 to 6, wherein a plurality of n inner walls are provided inside the outer wall; and When observing from the first direction perpendicular to the aforementioned main surface of the aforementioned substrate, the area within each of the aforementioned inner walls is set as SA1, and the total area between the plurality of aforementioned inner walls and the aforementioned outer wall is set as SA2, the following equations (1) and (2) are established: SA2≧(n×SA1) / 3 …(1) SA2≦n×SA1 …(2). [Form 8] A circuit substrate as in any one of forms 1 to 7, wherein the outer wall is in contact with the inner wall in at least a portion. [Form 9] A circuit substrate as in any one of forms 1 to 8, wherein the groove portion extends from the front end of the wall frame portion in the first direction orthogonal to the main surface of the substrate toward the substrate side when viewed from the thickness direction of the wall frame portion of the inner wall; and In the width direction perpendicular to the thickness direction and the first direction, the width of the groove portion is larger on the front end side than on the bottom side. [Form 10] A method for manufacturing a mounting substrate, wherein the mounting substrate is manufactured by mounting electronic components on a circuit substrate as in any one of forms 1 to 9, and After the constituent material and the electronic component are arranged on the substrate, a pressure reflow device is used to join the electronic component to the terminal.
[0065] 1: Install the base plate 2: Electronic parts 3: Circuit board 4, 4A, 4B: Joining materials 6: Ontology part 7:Terminal 8: Base material 8a: Main side 9: Inner wall / wall 9a: front end 10: Terminals (1st terminal, 2nd terminal) 11: Concave cavity 12: Conductive film 13, 13A, 13B, 13C, 13D, 41, 41A, 41B, 41C, 41D: Wall frame 13a, 41a: Inner circumference / surface 13b, 41b: Peripheral surface / surface 13c: front end / surface 13d: End 20: Structural materials 30: Groove 30a: Bottom surface 30b: Side / Face 40: Outer wall / wall 40A, 40Aa, 40Ab, 40B, 40C, 40Ca, 40Cb, 40Cc, 40D, 40Da, 40Db, 40Dc, 40E, 40Ea, 40Eb, 40Ec, 40Ed, 40Ee, 40Ef: Outer wall 41c: front end 41d: End 45: concave part 46: Concave cavity material 49: Pressurized reflow device / spacer 51: Laser device 52: Resist 53: Glass mask 103: Circuit board D1: Dimensions Hi, Ho: Height PE:Region PG1, PG2: Location SL: Baseline SP: Space SP1: Reference position T1, T2: Reference shape Tbo, Ti, To, Tto:Thickness w1: size / inner wall (inner) opening width / outer wall (inner) opening width w2: size / inner wall (outer) opening width X, Y, Z: Axis
Claims
1. A circuit board comprising: a substrate having a main surface; a first terminal and a second terminal disposed on the main surface of the substrate; and an inner wall of an insulating material disposed on the main surface of the substrate; wherein the first and second terminals are disposed within a cavity surrounded by the inner wall; the inner wall having at least one groove extending from an inner peripheral surface to an outer peripheral surface; an outer wall of the insulating material disposed on the main surface of the substrate on the outer peripheral side of the inner wall in a manner surrounding the cavity; and at least one of the inner wall and the outer wall having a recess on a surface extending along a first direction orthogonal to the main surface of the substrate at a position on the substrate side in the first direction; and a cavity material covering the substrate being disposed at the position of the recess.
2. The circuit board of claim 1, wherein the height of the aforementioned inner wall is greater than or equal to the height of the aforementioned outer wall.
3. The circuit board of claim 1, wherein when the volume of the space between the aforementioned inner wall and the aforementioned outer wall is set as S2, and the volume occupied by the electronic component installed in the aforementioned cavity is set as S3, S2 is S3 or more.
4. The circuit board of claim 1, wherein the end of the inner peripheral surface of the aforementioned outer wall, which is orthogonal to the aforementioned main surface of the aforementioned substrate in the first direction, is disposed on the substrate side further inner peripheral than the front end.
5. The circuit board of claim 1, wherein when the thickness of the front end of the frame portion of the aforementioned outer wall in the first direction orthogonal to the aforementioned main surface of the aforementioned substrate is set to Tto, the thickness of the end on the substrate side is set to Tbo, and the height of the aforementioned frame portion of the aforementioned outer wall is set to Ho, the condition that Tbo is a conical shape of Tto or higher and Ho or higher is met.
6. The circuit board of claim 1, wherein a plurality of n inner walls are provided within the aforementioned outer wall; and when viewed from a first direction orthogonal to the aforementioned main surface of the aforementioned substrate, the area within each of the aforementioned inner walls is defined as SA1, and the total area between the plurality of the aforementioned inner walls and the aforementioned outer wall is defined as SA2, the following equations (1) and (2) hold: SA2≧(n×SA1) / 3 …(1) SA2≦n×SA1 …(2).
7. The circuit board of claim 1, wherein a portion of the aforementioned outer wall contacts the aforementioned inner wall.
8. The circuit board of claim 1, wherein, viewed from the thickness direction of the wall frame portion of the inner wall, the groove portion extends from the front end of the wall frame portion toward the substrate side in a first direction orthogonal to the aforementioned main surface of the substrate; and in the width direction orthogonal to the aforementioned thickness direction and the aforementioned first direction, the width of the groove portion is larger at the front end side than at the bottom surface side.
9. A method for manufacturing a mounting substrate, wherein the mounting substrate is manufactured by mounting electronic components on a circuit board as claimed in any one of claims 1 to 8, and a constituent material is disposed on the aforementioned substrate, and after the aforementioned electronic components are disposed, the aforementioned electronic components are bonded to the aforementioned terminals using a pressure reflow soldering apparatus.
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