Equipment for cleaning foreline valve of semiconductor manufacturing facility and plasma generating apparatus therefor

Abstract

According to the present invention, a plasma generation apparatus is provided, which serves as an apparatus for generating cleaning plasma in a semiconductor manufacturing facility, located upstream of a pressure regulating valve mounted on a chamber exhaust pipe and used to clean the pressure regulating valve. The semiconductor manufacturing facility includes: a process chamber, a chamber exhaust pipe through which exhaust gas from the process chamber flows, and a pressure regulating valve mounted on the chamber exhaust pipe and regulating the internal pressure of the chamber exhaust pipe. The plasma generation apparatus includes: a channel module configured to provide a channel through which exhaust gas enters and flows, the channel extending along a central axis; and an upstream flange module connected to the channel module. The upstream end; and the downstream flange module connected to the downstream end of the channel module, wherein the channel module includes: a channel element made of dielectric material extending along a central axis and the channel formed therein; and a channel-side electrode element made of conductive material surrounding the outer peripheral surface of the channel element, and the upstream flange module includes an upstream-side electrode element made of conductive material, and the downstream flange module includes a downstream-side electrode element made of conductive material, and the cleaning plasma is generated on the channel by discharge between the channel-side electrode element and the upstream-side electrode element and by discharge between the channel-side electrode element and the downstream-side electrode element.

Description

[Technical Field]

[0001] The present invention relates to semiconductor manufacturing facilities, and more particularly, to a technique for cleaning valves installed in upstream pipelines of semiconductor manufacturing facilities. [Previous Technology]

[0002] In semiconductor manufacturing facilities, the gas system in the process chamber is discharged through a foreline extending from the process chamber. Typically, a throttle valve that regulates the internal pressure of the process chamber is installed in the foreline. Korean Patent Registration No. 10-1795980 discloses a configuration in which additional purge gas is injected into the throttle valve to clean deposits in the throttle valve installed in the foreline. However, this method complicates the structure of the throttle valve and requires additional equipment for supplying the additional purge gas. [Summary of the Invention]

[0003] Technical Issues

[0004] The present invention provides an apparatus for cleaning a foreline valve in a semiconductor manufacturing facility and a plasma generation device therefor.

[0005] Technical means

[0006] According to one aspect of the present invention, a plasma generating apparatus is provided, comprising means for generating cleaning plasma upstream of a pressure regulating valve mounted on a chamber exhaust pipe in a semiconductor manufacturing facility, the semiconductor manufacturing facility comprising: a process chamber, a chamber exhaust pipe through which exhaust gas from the process chamber flows, and a pressure regulating valve mounted on the chamber exhaust pipe and regulating the internal pressure of the chamber exhaust pipe, the plasma generating apparatus comprising: a channel module configured to provide a channel through which exhaust gas enters and flows, the channel extending along a central axis; an upstream flange module connected to the channel... The upstream end of the channel module; and the downstream flange module connected to the downstream end of the channel module, wherein the channel module includes: a channel element made of dielectric material extending along a central axis and the channel being formed therein; and a channel-side electrode element made of conductive material surrounding the outer peripheral surface of the channel element, and the upstream flange module includes an upstream-side electrode element made of conductive material, and the downstream flange module includes a downstream-side electrode element made of conductive material, and the cleaning plasma is generated on the channel by discharge between the channel-side electrode element and the upstream-side electrode element, and by discharge between the channel-side electrode element and the downstream-side electrode element.

[0007] According to another aspect of the present invention, an apparatus for cleaning valves is provided, comprising: a plasma generating device; a power supply unit configured to generate power required for operation of the plasma generating device; and a power supply cable configured to supply the power generated by the power supply unit to the plasma generating device.

[0008] Effects of the Invention

[0009] According to the present invention, all the above-mentioned objectives of the present invention can be achieved. Specifically, since the plasma generating device according to the present invention is installed upstream of the throttle valve on the upstream pipeline to generate cleaning plasma using the capacitively coupled plasma (CCP) method and to introduce the cleaning plasma into the throttle valve, the throttle valve can be cleaned more easily than the method according to the prior art.

Implementation Method

[0018] In the following, the configuration and operation of embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0019] Figure 1 schematically illustrates the configuration of a semiconductor manufacturing facility equipped with a plasma device for cleaning a pre-stage valve according to an embodiment of the present invention. Referring to Figure 1, the semiconductor manufacturing facility A includes: a process chamber C in which a semiconductor manufacturing process is performed using various process gases; a vacuum pump P that creates a gas discharge pressure to discharge gas from the process chamber C; a scrubber S that processes the gas discharged from the process chamber C; a chamber exhaust pipe F that communicates the process chamber C and the vacuum pump P and forms a pre-stage pipeline through which the exhaust gas discharged from the process chamber C flows; a throttle valve V that is a pressure regulating valve installed on the chamber exhaust pipe F and regulates the internal pressure of the process chamber C; an apparatus 100 for cleaning a pre-stage valve according to an embodiment of the present invention, which cleans the throttle valve V; and a pump exhaust pipe D that communicates the process chamber C and the scrubber S and through which the gas discharged from the vacuum pump P flows. Since the semiconductor manufacturing facility A shown in Figure 1, apart from the device 100 for cleaning the fore-stage valve (which is a feature of this invention), all other configurations, namely the process chamber C, vacuum pump P, scrubber S, chamber exhaust pipe F, throttle valve V, and pump exhaust pipe D, can be configured within the general technical scope related to this invention, their detailed descriptions will be omitted here.

[0020] The apparatus 100 for cleaning the pre-valve is used to clean the throttle valve V and includes: a plasma generating device 105, which is mounted on the chamber exhaust pipe F and generates plasma; a power supply unit 190, which generates the power required for the operation of the plasma generating device 105; and a power supply cable 195, which supplies the power generated by the power supply unit 190 to the plasma generating device 105.

[0021] The plasma generating device 105 is installed on the chamber exhaust pipe F and generates plasma. The plasma generating device 105 operates by receiving power generated by the power supply unit 190 through the power supply cable 195. The plasma generating device 105 is located upstream of the throttle valve V on the chamber exhaust pipe F, and the plasma generated by the plasma generating device 105 is introduced into the throttle valve V. The plasma generated by the plasma generating device 105 and introduced into the throttle valve V removes deposits in the throttle valve V. In this embodiment, the plasma generating device 105 will be described as generating plasma for cleaning the throttle valve V by receiving argon (Ar) and nitrogen trifluoride (NF₃) gas from the process chamber C. Referring to Figures 2, 3, and 4, the plasma generating device 105 includes: a channel module 110 extending along a generally straight central axis X; an inlet-side flange module 130 connected to an inlet-side end 110a of the channel module 110; an outlet-side flange module 150 connected to an outlet-side end 110b of the channel module 110; a plurality of connecting rods 170 connecting the inlet-side flange module 130 to the outlet-side flange module 150; and a protective cover member 180 surrounding the outer periphery of the channel module 110.

[0022] The channel module 110 is generally circular and extends in a straight line along its central axis X. A channel 111 for gas flow is formed inside the channel module 110. The channel 111 formed in the channel module 110 is substantially the same as the channel formed on the chamber exhaust pipe F. The inlet-side flange module 130 is in close contact with and connected to the inlet-side end 110a of the channel module 110, and the outlet-side flange module 150 is in close contact with and connected to the outlet-side end 110b of the channel module 110. The channel module 110 is shown in plan view in Figure 5 and in exploded perspective view in Figure 6. Referring to Figures 3, 4, 5 and 6, the channel module 110 includes: a channel element 112 that forms a channel 111 inside the channel module 110; a channel-side electrode element 114 that surrounds the outer peripheral surface of the channel element 112; an electrode fixing unit 120 that fixes the channel-side electrode element 114; and a shock-absorbing element 128 that is disposed between the channel element 112 and the channel-side electrode element 114.

[0023] The channel element 112 has a circular tubular shape extending along the central axis X, and forms a channel 111 with a circular cross-section extending in a straight line inside it. The channel element 112 is made of a dielectric material, and in this embodiment, the channel element 112 will be described as being made of aluminum nitride (AlN). Gas introduced from the process chamber C flows through the channel 111 of the channel element 112 and is supplied to the throttle valve V. The channel 111 is also the area where plasma is generated. The damping element 116 is in close contact with the outer peripheral surface of the channel element 112. One end of the channel element 112 on the inlet side constitutes the inlet end 110a of the channel module 110, and one end of the channel element 112 on the outlet side constitutes the outlet end 110b of the channel module 110.

[0024] The channel-side electrode element 114 is made of a conductive material, and in this embodiment, the case where the channel-side electrode element 114 is made of copper (Cu) will be described. The channel-side electrode element 114 includes a channel electrode component 115 surrounding the outer peripheral surface of the channel element 112, and a first coupling wing 117 and a second coupling wing 119 that are respectively bent outward in the radial direction from both ends of the channel electrode component 115.

[0025] The channel electrode component 115 is generally strip-shaped and extends along the circumferential direction of the channel element 112, surrounding the outer peripheral surface of the channel element 112. The first coupling wing 117 and the second coupling wing 119 are respectively connected to the two ends of the channel electrode component 115 in the circumferential direction. The channel electrode component 115 is spaced apart from the two ends of the channel element 112. The inner peripheral surface of the channel electrode component 115 is in close contact with the damping element 116.

[0026] The first coupling wing 117 and the second coupling wing 119 extend circumferentially from both ends of the channel electrode component 115 and bend outwards radially. The first coupling wing 117 and the second coupling wing 119 are adjacent to each other in the circumferential direction and face each other. Three first through holes 117a are formed in the first coupling wing 117 to be spaced apart from each other in the width direction of the channel electrode component 115 having a strip shape. Three second through holes 119a are formed in the second coupling wing 119 to be spaced apart from each other in the width direction of the channel electrode component 115 having a strip shape. Each of the three first through holes 117a and the three second through holes 119a corresponds to each other in a one-to-one manner and faces each other. The electrode fixing unit 120 is coupled to the first coupling wing 117 and the second coupling wing 119.

[0027] The electrode fixing unit 120 fixes the channel-side electrode element 114 to the channel module 110. The electrode fixing unit 120 includes a first coupling rod 122 coupled to the first coupling wing 117 of the channel-side electrode element 114, a second coupling rod 124 coupled to the second coupling wing 119 of the channel-side electrode element 114, and three fasteners 126 that fasten the first coupling rod 122 and the second coupling rod 124 to each other.

[0028] The first coupling rod 122 is generally rod-shaped and has dimensions and shape corresponding to the first coupling wing 117 of the channel-side electrode element 114. The first coupling rod 122 is made of conductive material. A first groove 122a is formed in the first coupling rod 122, in which the first coupling wing 117 of the channel-side electrode element 114 is perfectly fitted. Three first bolt holes 123 are formed in the first coupling rod 122, which are positioned to correspond to the three first through holes 117a formed in the first coupling wing 117 of the channel-side electrode element 114.

[0029] The second coupling rod 124 is generally rod-shaped and has dimensions and shape corresponding to the second coupling wing 119 of the channel-side electrode element 114. The second coupling rod 124 is made of a conductive material. A second groove 124a is formed in the second coupling rod 124, in which the second coupling wing 119 of the channel-side electrode element 114 is fully embedded. Three second bolt holes 125 are formed in the second coupling rod 124, which are positioned to correspond to the three second through holes 119a formed in the second coupling wing 119 of the channel-side electrode element 114.

[0030] Three fasteners 126 fasten the first coupling rod 122 and the second coupling rod 124 together. Each of the three fasteners 126 includes three fastening bolts 127a and a fastening nut 127b. The three fastening bolts 127a are fastened to the fastening nut 127b by passing through a second bolt hole 125 formed in the second coupling rod 124 and a first bolt hole 123 formed in the first coupling rod 122. The channel-side electrode element 114, which is coupled to the first coupling rod 122 and the second coupling rod 124, is fastened by the three fasteners 126. A power supply cable 195 is fastened and coupled to one of the three fasteners 126 by the fastening nut 127b to supply power to the channel-side electrode element 114. In this embodiment, the case where the power supply cable 195 is connected to the fastener 126 located at the middle position among the three fasteners 126 will be described.

[0031] The damping element 128 is generally tubular and is disposed between the channel element 112 and the channel-side electrode element 114. The inner peripheral surface of the damping element 128 is in close contact with the outer peripheral surface of the channel element 112, and the outer peripheral surface of the damping element 128 is in close contact with the channel-side electrode element 114. The damping element 128 is made of a conductive material and has appropriate elasticity, thereby enabling the channel-side electrode element 114 to be in close contact with the channel element 112. The damping element 128 may be made of a conductive polymer material.

[0032] Referring to Figures 2, 3, and 4, the inlet-side flange module 130 is coupled to the inlet-side end 110a of the channel module 110. The inlet-side flange module 130 is shown in an exploded perspective view in Figure 7. Referring to Figures 2, 3, 4, and 7, the inlet-side flange module 130 includes an inlet-side flange body 132, an annular inlet-side insulating element 140 coupled to the inlet-side flange body 132, an inlet-side insulating block 145 coupled to the inlet-side flange body 132, and an inlet-side O-ring 149 that serves as an upstream O-ring and is coupled to the inlet-side flange body 132.

[0033] The inlet-side flange body 132 includes an inlet-side channel component 133 extending a short distance along the central axis X, and an inlet-side flange component 136 extending radially outward from the inlet-side channel component 133. The chamber exhaust pipe F is detachably connected to the inlet-side flange body 132. The inlet-side flange body 132 is made of a conductive material, grounded, and serves as an upstream-side electrode element. Plasma discharge occurs between the inlet-side flange body 132, which serves as the upstream-side electrode element, and the channel-side electrode element 114. In this embodiment, the case where the inlet-side flange body 132 is made of SUS304 or aluminum alloy will be described.

[0034] The inlet-side channel component 133 has a tubular shape extending a short distance along the central axis X. An inlet channel 134 is formed inside the inlet-side channel component 133, communicating with the channel 111 formed on the channel module 110. The inlet-side O-ring groove 135 into which the inlet-side O-ring 149 is inserted is formed in one end of the channel module 110 in the inlet-side channel component 133.

[0035] The inlet-side flange member 136 extends radially outward from the inlet-side channel member 133 further than the channel module 110. An inlet-side annular groove 137 in which an inlet-side insulating element 140 is located and an inlet-side seat groove 138 in which an inlet-side insulating block 145 is located are formed on the surface of the inlet-side flange member 136 facing the outlet-side flange module 150.

[0036] The inlet-side insulating element 140 is annular and made of insulating material. The inlet-side insulating element 140 is located in the inlet-side annular groove 137 formed in the inlet-side flange member 136. The inlet-side insulating element 140 surrounds one end of the outer peripheral surface of the channel element 112, and electrically insulates the inlet-side flange body 132 from the channel-side electrode element 114.

[0037] The inlet-side insulating block 145 is made of insulating material and is seated in the inlet-side groove 138 formed in the inlet-side flange member 136. The inlet-side insulating block 145 prevents the inlet-side flange body 132 from contacting and electrically connecting with the first coupling rod 122 and the second coupling rod 124.

[0038] The inlet-side O-ring 149 is inserted into the inlet-side O-ring groove 135 formed in the inlet-side channel component 133 and coupled to the inlet-side flange body 132. The connection between the inlet-side flange body 132 and the channel element 112 is sealed by the inlet-side O-ring 149.

[0039] Referring to Figures 2, 3, and 4, the outlet-side flange module 150 is coupled to the outlet-side end 110b of the channel module 110. The outlet-side flange module 150 is shown in an exploded perspective view in Figure 8. Referring to Figures 2, 3, 4, and 8, the outlet-side flange module 150 includes an outlet-side flange body 152, an annular outlet-side insulating element 160 coupled to the outlet-side flange body 152, an outlet-side insulating block 165 coupled to the outlet-side flange body 152, and an outlet-side O-ring 169 that serves as a downstream O-ring and is coupled to the outlet-side flange body 152.

[0040] The outlet-side flange body 152 includes an outlet-side channel component 153 extending a short distance along the central axis X, and an outlet-side flange component 156 extending radially outward from the outlet-side channel component 153. The chamber exhaust pipe F is detachably connected to the outlet-side flange body 152. The outlet-side flange body 152 is made of a conductive material, grounded, and serves as a downstream-side electrode element. Plasma discharge occurs between the outlet-side flange body 152, which serves as the downstream-side electrode element, and the channel-side electrode element 114. In this embodiment, the case where the outlet-side flange body 152 is made of SUS304 or aluminum alloy will be described.

[0041] The outlet-side channel component 153 has a tubular shape extending a short distance along the central axis X. An outlet channel 154 is formed inside the outlet-side channel component 153, communicating with the channel 111 formed on the channel module 110. The outlet-side O-ring 169 is inserted into an outlet-side O-ring groove 155 formed in one end of the channel module 110 in the outlet-side channel component 153.

[0042] The outlet-side flange member 156 extends radially outward from the outlet-side channel member 153 further than the channel module 110. An outlet-side annular groove 157 in which an outlet-side insulating element 160 is located and an outlet-side seat groove 158 in which an outlet-side insulating block 165 is located are formed on the surface of the outlet-side flange member 156 facing the inlet-side flange module 130.

[0043] The outlet-side insulating element 160 is annular and made of insulating material. The outlet-side insulating element 160 is located in the outlet-side annular groove 157 formed in the outlet-side flange member 156. The outlet-side insulating element 160 surrounds one end of the outer peripheral surface of the channel element 112, thereby electrically insulating the outlet-side flange body 152 to the channel-side electrode element 114 from each other.

[0044] The outlet-side insulating block 165 is made of insulating material and is seated in the outlet-side groove 158 formed in the outlet-side flange member 156. The outlet-side insulating block 165 prevents the outlet-side flange body 152 from contacting and electrically connecting with the first coupling rod 122 and the second coupling rod 124.

[0045] The outlet-side O-ring 169 is inserted into the outlet-side O-ring groove 155 formed in the outlet-side channel component 153 and coupled to the outlet-side flange body 152. The connection between the outlet-side flange body 152 and the channel element 112 is sealed by the outlet-side O-ring 169.

[0046] Referring to Figures 3 and 4, a plurality of connecting rods 170 each connect the inlet-side flange module 130 to the outlet-side flange module 150. The plurality of connecting rods 170 are spaced apart from the outside of the channel module 110 and arranged sequentially in the circumferential direction. The two ends of each of the plurality of connecting rods 170 are coupled to the inlet-side flange component 136 and the outlet-side flange component 156, respectively. The channel module 110 is in firm and tight contact with the space between the inlet-side flange module 130 and the outlet-side flange module 150 through the plurality of connecting rods 170, thus maintaining a coupled state.

[0047] A protective cover component 180 surrounds and protects the channel module 110 and the plurality of connecting rods 170. The protective cover component 180 includes a first cover element 181 and a second cover element 185 having a semi-circular shape. The first cover element 181 and the second cover element 185 are arranged in a circumferential direction and surround the channel module 110 in a circumferential direction. The first cover element 181 and the second cover element 185 are screwed to the inlet-side flange component 136 and the outlet-side flange component 156. A plurality of cooling holes 186 for air passage are formed in the first cover element 181 and the second cover element 185 for cooling. In addition, a cable channel 188 through which a power supply cable 195 passes is formed in the component where the first cover element 181 and the second cover element 185 are connected to each other.

[0048] Referring to Figure 1, the power supply unit 190 generates the alternating current required for the operation of the plasma generating device 105. The power generated by the power supply unit 190 is supplied to the plasma generating device 105 through the power supply cable 195.

[0049] The power supply cable 195 supplies the AC power generated by the power supply unit 190 to the plasma generating device 105. When AC power is supplied to the plasma generating device 105 through the power supply cable 195, the plasma generating device 105 uses the capacitively coupled plasma (CCP) method to generate a cleaning process on the channel 111 by discharging between the channel-side electrode element 114 and the upstream-side electrode element 132 and between the channel-side electrode element 114 and the downstream-side electrode element 152, and introduces the cleaning plasma into the throttle valve V.

[0050] A plasma generating apparatus according to another embodiment of the present invention is shown in cross-sectional view in Figure 9. Referring to Figure 9, the plasma generating apparatus 205 is another embodiment of the plasma generating apparatus 105 described with reference to Figures 2 to 8, comprising a channel module 110 extending along a generally straight central axis X, an inlet-side flange module 230 connected to an inlet-side end 110a of the channel module 110, an outlet-side flange module 250 connected to an outlet-side end 110b of the channel module 110, and a side cover element 290 surrounding the outer periphery of the channel module 110.

[0051] Since the channel module 110 has a configuration that is substantially the same as that provided in the plasma generating apparatus 105 with reference to Figures 2 to 8, its detailed description will be omitted here.

[0052] The inlet side flange module 230 includes an inlet side flange body 132, an annular inlet side insulating element 140 coupled to the inlet side flange body 132, an inlet side O-ring 149 coupled to the inlet side flange body 132, an inlet side additional coupling element 245 coupled to the inlet side flange body 132, and a first external O-ring 249 coupled to the inlet side additional coupling element 245.

[0053] Since the inlet side flange body 132 has a configuration that is substantially the same as that provided in the inlet side flange module 130 described with reference to Figures 2 to 4 and 7, its detailed description will be omitted here.

[0054] Since the inlet-side insulating element 140 has a configuration that is substantially the same as that provided in the inlet-side flange module 130 described with reference to Figures 2 to 4 and 7, its detailed description will be omitted here.

[0055] Since the inlet-side O-ring 149 has a configuration that is substantially the same as that provided in the inlet-side flange module 130 with reference to Figures 2 to 4 and Figure 7, its detailed description will be omitted here.

[0056] An inlet-side additional coupling element 245, which is generally annular and serves as an upstream-side additional coupling element, is disposed around the exterior of the channel module 110. The inlet-side additional coupling element 245 is coupled to the surface of the inlet-side annular groove 137 in the inlet-side flange body 132 facing the outlet-side flange module 250. The first external O-ring 249 into which the first external O-ring groove 247 is inserted is formed in the surface of the inlet-side additional coupling element 245 adjacent to the inlet-side flange body 132.

[0057] The first external O-ring 249 is inserted into the first external O-ring groove 247 formed in the inlet-side additional coupling element 245 and coupled to the inlet-side additional coupling element 245. The contact portion between the inlet-side flange body 132 and the inlet-side additional coupling element 245 is sealed by the first external O-ring 249. In this embodiment, the groove in which the first external O-ring 249 is inserted will be described as being formed within the inlet-side additional coupling element 245. However, unlike this, the groove may be formed in the inlet-side flange body 132 or together with the inlet-side flange body 132 and the inlet-side additional coupling element 245, which is also within the scope of this invention.

[0058] The outlet side flange module 250 includes an outlet side flange body 152, an annular outlet side insulating element 160 coupled to the outlet side flange body 152, an outlet side O-ring 169 coupled to the outlet side flange body 152, an outlet side additional coupling element 265 coupled to the outlet side flange module 150, and a second external O-ring 269 coupled to the outlet side additional coupling element 265.

[0059] Since the outlet side flange body 152 has a configuration that is substantially the same as that provided in the outlet side flange module 150 described with reference to Figures 2 to 4 and 8, its detailed description will be omitted here.

[0060] Since the outlet-side insulating element 160 has a configuration that is substantially the same as that provided in the outlet-side flange module 150 described with reference to Figures 2 to 4 and Figure 8, its detailed description will be omitted here.

[0061] Since the outlet-side O-ring 169 has a configuration that is substantially the same as that provided in the outlet-side flange module 150 with reference to Figures 2 to 4 and Figure 8, its detailed description will be omitted here.

[0062] An outlet-side additional coupling element 265, which is a downstream-side additional coupling element and is generally annular, is disposed around the outside of the channel module 110. The outlet-side additional coupling element 265 is coupled to the surface of the outlet-side annular groove 157 in the outlet-side flange body 152 facing the inlet-side flange module 230. The second external O-ring 269 into which the second external O-ring groove 267 is inserted is formed in the surface of the outlet-side additional coupling element 265 adjacent to the outlet-side flange body 152.

[0063] The second external O-ring 269 is inserted into the second external O-ring groove 267 formed in the outlet-side additional coupling element 265 and coupled to the outlet-side additional coupling element 265. The contact portion between the outlet-side flange body 152 and the outlet-side additional coupling element 265 is sealed by the second external O-ring 269. In this embodiment, the groove in which the second external O-ring 269 is inserted will be described as being formed in the outlet-side additional coupling element 265. However, unlike this, the groove may be formed in the outlet-side flange body 152 or together with the outlet-side flange body 152 and the outlet-side additional coupling element 265, which is also within the scope of this invention.

[0064] The side cover element 290 is generally annular in shape and surrounds the outer periphery of the channel module 110 between the inlet-side flange body 132 and the outlet-side flange body 152. The two ends of the side cover element 290 are engaged with each other, so that there is no gap between the inlet-side additional coupling element 245 and the outlet-side additional coupling element 265. The side cover element 290, together with the inlet-side O-ring 149, the outlet-side O-ring 169, the first outer O-ring 249, and the second outer O-ring 269, prevents the gas from leaking outward through the plasma generating device 205.

[0065] Although the present invention has been specifically shown and described with reference to its exemplary embodiments, those skilled in the art will understand that various changes in form and detail may be made thereto without departing from the spirit and scope of the invention as defined in the following claims. [Simplified Explanation of the Diagram]

[0010] Figure 1 is a schematic diagram illustrating the configuration of a semiconductor manufacturing facility equipped with a device for cleaning a pre-valve according to an embodiment of the present invention;

[0011] Figure 2 is a perspective view of the plasma generating device provided in the apparatus for cleaning a pre-valve according to one embodiment of the present invention shown in Figure 1;

[0012] Figure 3 is an exploded perspective view illustrating the plasma generating device shown in Figure 2 separated into its main components;

[0013] Figure 4 is a cross-sectional view taken along line A-A' of the plasma generating device shown in Figure 2;

[0014] Figures 5 and 6 are plan views and exploded perspective views of the channel module of the plasma generating device shown in Figure 4;

[0015] Figure 7 is an exploded perspective view of the upstream flange module of the plasma generating device shown in Figure 4;

[0016] Figure 8 is an exploded perspective view of the downstream flange module of the plasma generating device shown in Figure 4; and

[0017] Figure 9 is a cross-sectional view of a plasma generating apparatus according to another embodiment of the present invention.

Claims

1. A plasma generation apparatus, comprising, in a semiconductor manufacturing facility, a device for generating cleaning plasma upstream of a pressure regulating valve mounted on a chamber exhaust pipe and for cleaning the pressure regulating valve, the semiconductor manufacturing facility comprising: a process chamber, a chamber exhaust pipe through which exhaust gas from the process chamber flows, and the pressure regulating valve mounted on the chamber exhaust pipe and for regulating the internal pressure of the chamber exhaust pipe, the plasma generation apparatus comprising: A channel module configured to provide a channel through which the exhaust gas enters and flows, the channel extending along a central axis; An upstream flange module is connected to the upstream end of the channel module; The channel module includes a downstream flange module connected to the downstream end of the channel module, wherein the channel module includes a channel element made of dielectric material extending along the central axis and the channel being formed therein; and a channel-side electrode element made of conductive material surrounding the outer peripheral surface of the channel element, and the upstream flange module includes an upstream electrode element made of conductive material, and the downstream flange module includes a downstream electrode element made of conductive material, and the cleaning plasma is generated on the channel by discharge between the channel-side electrode element and the upstream electrode element and by discharge between the channel-side electrode element and the downstream electrode element.

2. The plasma generating apparatus of claim 1, wherein the channel-side electrode element includes a channel electrode component extending in a circumferential direction and surrounding the outer peripheral surface of the channel element, and a first coupling wing and a second coupling wing protruding outward from both ends of the channel electrode component, and the channel module further includes an electrode fixing unit for fixing the channel-side electrode element to the channel element by fastening the first coupling wing and the second coupling wing.

3. The plasma generating apparatus of claim 2, wherein the electrode fixing unit includes a first coupling rod coupled to the first coupling wing, a second coupling rod coupled to the second coupling wing, and a fastening bolt and a fastening nut for fastening the first coupling rod and the second coupling rod.

4. The plasma generating apparatus of claim 3, wherein a first groove is formed in the first coupling rod into which the first coupling wing is inserted, and a second groove is formed in the second coupling rod into which the second coupling wing is inserted.

5. The plasma generating apparatus of claim 4, wherein a bolt hole through which the fastening bolt passes is formed in the first coupling rod and the second coupling rod, and in the first coupling wing and the second coupling wing, respectively.

6. The plasma generating apparatus of claim 1, wherein the channel module further includes a damping element made of a conductive material disposed between the channel element and the channel-side electrode element, and the two surfaces thereof are in close contact with the outer peripheral surface of the channel element and the inner peripheral surface of the channel-side electrode element, respectively.

7. The plasma generating apparatus of claim 1, wherein the upstream flange module further includes an inlet-side insulating element made of insulating material surrounding one end of the inlet-side outer peripheral surface of the channel element to block contact between the upstream electrode element and the channel-side electrode element, and the downstream flange module further includes an outlet-side insulating element made of insulating material surrounding one end of the outlet-side outer peripheral surface of the channel element to block contact between the downstream electrode element and the channel-side electrode element.

8. The plasma generating apparatus of claim 7, wherein an inlet-side annular groove is formed in the upstream electrode element in which the inlet-side insulating element is located, and an outlet-side annular groove is formed in the downstream electrode element in which the outlet-side insulating element is located.

9. The plasma generating apparatus of claim 1, further comprising a protective cover member spaced apart from and surrounding the outer periphery of the channel module, wherein cooling holes for cooling are formed on the protective cover member.

10. The plasma generating apparatus of claim 1, further comprising a plurality of connecting rods arranged sequentially in a circumferential direction outside the channel module, wherein each of the plurality of connecting rods is coupled at both ends to the upstream flange module and the downstream flange module, respectively.

11. The plasma generating apparatus of claim 1, wherein the upstream flange module further includes an upstream O-ring that seals the contact portion between the upstream electrode element and the channel element, and the downstream flange module further includes a downstream O-ring that seals the contact portion between the downstream electrode element and the channel element.

12. The plasma generating apparatus of claim 11, further comprising a side cover element having an annular wall shape surrounding the outside of the channel module between the upstream flange module and the downstream flange module, wherein the upstream flange module further comprises an upstream additional coupling element engaged with the upstream end of the side cover element and coupled to the upstream electrode element, and a first external O-ring sealing the contact portion of the upstream electrode element and the upstream additional coupling element; and the downstream flange module further comprises a downstream additional coupling element engaged with the downstream end of the side cover element and coupled to the downstream electrode element, and a second external O-ring sealing the contact portion of the downstream electrode element and the downstream additional coupling element.

13. An apparatus for cleaning a valve, which serves as an apparatus for cleaning a pressure regulating valve in a semiconductor manufacturing facility, the semiconductor manufacturing facility comprising: a process chamber, a chamber exhaust pipe through which exhaust gas from the process chamber flows, and the pressure regulating valve mounted on the chamber exhaust pipe and regulating the internal pressure of the chamber exhaust pipe, the apparatus comprising: A plasma generating device is installed upstream of the pressure regulating valve on the vent pipe of the chamber and generates cleaning plasma for cleaning the pressure regulating valve; a power supply unit is configured to generate the power required for the operation of the plasma generating device. and a power supply cable configured to supply power generated by the power supply unit to the plasma generating device, wherein the plasma generating device includes: a channel module configured to provide a channel through which the exhaust gas enters and flows, the channel extending along a central axis; A channel-side electrode element surrounds the outer peripheral surface of a channel element and is electrically connected to the power supply cable; an upstream-side flange module is connected to the upstream end of the channel module; and a downstream-side flange module is connected to the downstream end of the channel module, wherein the upstream-side flange module includes an upstream-side electrode element made of a conductive material, and the downstream-side flange module includes a downstream-side electrode element made of a conductive material, and the cleaning plasma is generated on the channel by discharge between the channel-side electrode element and the upstream-side electrode element and by discharge between the channel-side electrode element and the downstream-side electrode element.

14. The device of claim 13, wherein the upstream electrode element and the downstream electrode element are grounded and serve as ground electrodes.

15. The device of claim 13, wherein the channel-side electrode element includes a channel electrode component extending in a circumferential direction and surrounding the outer peripheral surface of the channel element, and a first coupling wing and a second coupling wing projecting outward from both ends of the channel electrode component, and the channel module further includes an electrode fixing unit for fixing the channel-side electrode element to the channel element by fastening the first coupling wing and the second coupling wing, and the power supply cable is coupled to the electrode fixing unit.

16. The device of claim 15, wherein the electrode fixing unit includes a first coupling rod coupled to the first coupling wing, a second coupling rod coupled to the second coupling wing, and a fastening bolt and a fastening nut for fastening the first coupling rod and the second coupling rod, and the power supply cable is coupled to the fastening bolt and the fastening nut.

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