Optical multi-die interconnect bridge (OMIB)

Abstract

A package includes a bridging element (OMIB) and a first photonic path and a second photonic path forming a bidirectional photonic path. The OMIB has a first interconnect region and a second interconnect region for connection to one or more dies. A third unidirectional photonic path and a fourth unidirectional photonic path can be coupled between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first portion and the second portion can be coupled via an electrical interconnect with a length less than 2 mm. The die includes computing elements surrounding a central region adjacent to the second portion. The OMIB may include an electro-absorption modulator made of germanium, silicon, a germanium alloy, a silicon alloy, an indium phosphide (InP)-based III-V material, or a gallium arsenide (GaAs)-based III-V material. The OMIB may include temperature compensation for the modulator.

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