Design method of photomask structure

Abstract

A method for designing a photomask structure includes the following steps: Providing a first layout pattern having a first side and a second side opposite to each other. Inserting at least one first auxiliary pattern partially into the first layout pattern from the first side in a direction perpendicular to the extending direction of the first layout pattern, and inserting at least one second auxiliary pattern partially into the first layout pattern from the second side. Performing optical proximity correction to transform the first layout pattern into the second layout pattern, thereby obtaining a photomask pattern.

Claims

1. A method for designing a photomask structure, comprising: A first layout pattern is provided, wherein the first layout pattern has a first side and a second side that are opposite to each other; In a direction perpendicular to the extension direction of the first layout pattern, at least one first auxiliary pattern is partially inserted into the first layout pattern from the first side, and at least one second auxiliary pattern is partially inserted into the first layout pattern from the second side; and optical proximity correction is performed to transform the first layout pattern into a second layout pattern to obtain a photomask pattern, wherein the first layout pattern includes a first portion, the width of the first portion is less than the maximum width of the first layout pattern, the first auxiliary pattern and the second auxiliary pattern are inserted into the first portion, the first portion has opposing first ends and second ends in the extension direction, at least one first auxiliary pattern includes a plurality of first auxiliary patterns, at least one second auxiliary pattern includes a plurality of second auxiliary patterns, a portion of the plurality of first auxiliary patterns is located at the first end and the second end, and a portion of the plurality of second auxiliary patterns is located at the first end and the second end.

2. The method for designing a photomask structure as described in claim 1, wherein the first auxiliary pattern is aligned with the second auxiliary pattern.

3. The method for designing a photomask structure as described in claim 1, wherein the first auxiliary pattern is not aligned with the second auxiliary pattern.

4. The design method of the photomask structure as described in claim 1, wherein the depth to which the first auxiliary pattern is inserted into the first layout pattern is less than or equal to half the width of the first layout pattern at the insertion position of the first auxiliary pattern, and the depth to which the second auxiliary pattern is inserted into the first layout pattern is less than or equal to half the width of the first layout pattern at the insertion position of the second auxiliary pattern.

5. The design method of the photomask structure as described in claim 1, wherein the width of the first auxiliary pattern is greater than or equal to the minimum width specified by the photomask rule check, and the width of the second auxiliary pattern is greater than or equal to the minimum width specified by the photomask rule check.

6. The method for designing a photomask structure as claimed in claim 1, wherein another portion of the plurality of first auxiliary patterns is located between the first end and the second end, and another portion of the plurality of second auxiliary patterns is located between the first end and the second end.

7. The method for designing a photomask structure as claimed in claim 1, wherein the first layout pattern further includes a second portion, the first portion being connected to the second portion, and the width of the second portion being equal to the maximum width of the first layout pattern.

8. The method for designing a photomask structure as described in claim 1, wherein the photomask pattern is a superposition pattern of the second layout pattern, the first auxiliary pattern, and the second auxiliary pattern.

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