Optical transistor

Abstract

A photoelectric crystal includes: a first doped semiconductor layer having a base layer; a second doped semiconductor layer in contact with the base layer and forming a PN junction; a plurality of third doped semiconductor layers in contact with the second doped semiconductor layers and forming a PN junction; and a third conductive layer in contact with the third doped semiconductor layers, such that the third doped semiconductor layers are electrically connected to each other, and the third conductive layer is permeable to infrared light.

Claims

1. A photoelectric crystal, comprising: A first doped semiconductor layer (12) having a base layer (12B); a second doped semiconductor layer (13) in contact with the base layer (12B) and forming a PN junction; a plurality of third doped semiconductor layers (14) in contact with the second doped semiconductor layer (13) and forming a PN junction; and a third conductive layer (15) in contact with the third doped semiconductor layers (14) to electrically connect the third doped semiconductor layers (14) to each other, the third conductive layer (15) being permeable to infrared light; wherein the third conductive layer (15) is a sheet-like layer (PL) that covers and connects the third doped semiconductor layers (14) to electrically connect the third doped semiconductor layers (14) to each other.

2. The photoelectric crystal as claimed in claim 1, wherein the material of the third conductive layer (15) is polycrystalline silicon or indium tin oxide.

3. The photoelectric crystal as described in claim 1 further includes: A first conductive layer (11) is connected to the first doped semiconductor layer (12).

4. The photoelectric crystal as claimed in claim 3, wherein the first conductive layer (11) is connected to a sidewall layer (12W) of the first doped semiconductor layer (12), the first conductive layer (11) is located on a top surface (1S) of the photoelectric crystal, and the first conductive layer (11) is not in contact with the third conductive layer (15).

5. The photoelectric crystal as described in claim 4, wherein the material of the first conductive layer (11) is polycrystalline silicon or indium tin oxide.

6. The photoelectric crystal as described in claim 4, wherein the material of the first conductive layer (11) is a metallic material.

7. The photoelectric crystal as claimed in claim 3, wherein the first conductive layer (11) is connected to the base layer (12B) of the first doped semiconductor layer (12), and the first conductive layer (11) is not in contact with the third conductive layer (15).

8. The photoelectric crystal as described in claim 7, wherein the material of the first conductive layer (11) is a metallic material.

9. The photoelectric crystal as described in any one of claims 3 to 8 further comprises: A second conductive layer (16) is connected to the second doped semiconductor layer (13); wherein the material of the second conductive layer (16) is polycrystalline silicon or indium tin oxide, and the first conductive layer (11), the second conductive layer (16) and the third conductive layer (15) are not in contact with each other.

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