Processing chamber with solid-state power amplifiers, cooling method and device

Abstract

Methods and apparatus for processing a substrate. For example, a processing chamber may include: a power source; an amplifier connected to the power source, the amplifier including at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and the amplifier configured to amplify a power level of an input signal received from the power source to heat a substrate in a processing volume; and a cooling plate configured to receive a coolant to cool the amplifier during operation.

Description

[Technical Field]

[0001] The embodiments of this disclosure are generally related to solid-state power amplifiers (SSPAs). More specifically, the embodiments of this disclosure relate to methods and apparatus for using an SSPA including a processing chamber having liquid cooling capability for processing a substrate. [Previous Technology]

[0002] Conventional SSPA and traveling wave tube amplifiers (TWTAs) configured for use with substrate processing chambers (e.g., for wafer packaging) are known. However, such amplifiers can be very large, have high power consumption, and / or generate a large amount of noise and / or heat. [Summary of the Invention]

[0003] This document provides methods and apparatus for processing a substrate. In some embodiments, the apparatus may include a processing chamber including: a power source; an amplifier connected to the power source, the amplifier including at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and the amplifier being configured to amplify a power level of an input signal received from the power source for heating a substrate in a processing volume; and a cooling plate configured to receive a coolant for cooling the amplifier during operation.

[0004] According to at least some embodiments, a method for processing a substrate in a processing chamber may include the steps of: using an amplifier to amplify a power level of an input signal received from a power source, the amplifier including at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor; outputting an amplified signal to a substrate support disposed in a processing volume to heat the substrate; and supplying a coolant to a cooling plate disposed on the amplifier to cool the amplifier during operation.

[0005] According to at least some embodiments, a non-transitory computer can read storage media having instructions stored thereon, which, when executed, cause a processor to perform a method for processing a substrate in a processing chamber. The method for processing a substrate in a processing chamber may include the steps of: using an amplifier to amplify a power level of an input signal received from a power source, the amplifier including at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor; outputting an amplified signal to a substrate support disposed in a processing volume to heat the substrate; and supplying a coolant to a cooling plate disposed on the amplifier to cool the amplifier during operation.

[0006] Other and further embodiments of this disclosure are described below.

Implementation Method

[0014] This document provides embodiments of methods and apparatuses using processing chambers comprising SSPAs with liquid cooling capabilities. One or more embodiments of this disclosure are directed to integrating SSPAs into one or more processing chambers. For example, the SSPA may include gallium nitride (GaN) transistors, gallium arsenide (GaAs) transistors, etc., and may include a liquid cooling plate. In at least some embodiments, the processing chamber may be configured for three-dimensional wafer packaging, such as under-bump metallization (UMB), redistribution layer (RDL), complementary metal-oxide-semiconductor (CMOS) image sensor applications, etc. The processing chambers described herein use relatively compact high-power SSPAs that can be cooled using a cooling plate, thus providing low power consumption, low heat dissipation, and low noise generation during operation.

[0015] The substrate processing chamber can be advantageously aligned with a multi-chamber processing tool to save physical footprint and increase throughput. For example, the substrate processing chamber can be advantageously positioned below the loading gate chamber of the multi-chamber processing tool without increasing the tool footprint. Examples of multi-chamber processing tools suitable for use with the substrate processing chamber of this disclosure are any of the Applied Charger® series of processing tools commercially available from Applied Materials, Inc., Santa Clara, California. Other processing chambers from Applied Materials or other manufacturers may also benefit from the apparatus of the present invention disclosed herein.

[0016] In some embodiments, the substrate processing chamber is configured to support one or more substrates for advantageously performing batch degassing on one or more substrates via microwave heating. The substrate processing chamber includes configurable airflow and pumping arrangements to accommodate various types of substrates and different batch sizes for degassing. For example, silicon semiconductor substrates, polymer substrates, epoxy resin substrates, or any other substrates suitable for removing moisture via a microwave energy source. The substrate processing chamber described herein can be used at atmospheric or sub-atmospheric pressure, such as 1 x 10⁻⁷ Pascals.

[0017] FIG1 is a schematic side view of a processing chamber (e.g., a degassing processing chamber) according to at least some embodiments of the present disclosure. The processing chamber 100 includes a chamber body 102 having sidewalls 104 enclosing an internal volume 124 (e.g., a processing volume), a cover 112, and a chamber floor 114. The sidewalls 104 include a plurality of openings 134 to allow one or more processing gases to flow into the internal volume 124. In some embodiments, the plurality of openings 134 are symmetrically arranged around the chamber body 102 to advantageously provide a more uniform airflow across the surfaces of one or more substrates. One or more processing gases may be supplied from a gas source (not shown) via a mass flow controller (not shown) into the internal volume 124 of the processing chamber 100. The processing gas may be any suitable processing gas, such as an inert gas (e.g., argon) or nitrogen (N2), for performing the degassing process.

[0018] The chamber body 102 includes an upper portion 106 and a lower portion 108. A cover 112 is disposed on the upper surface of the upper portion 106. The lower portion 108 includes a base plate 146 having a surface defining the chamber floor 114.

[0019] A selectively sealable first elongated opening 110 (e.g., a slit valve opening) is provided in the upper portion 106 of the chamber body 102 for conveying one or more substrates into or out of the chamber body 102. For example, the first elongated opening 110 may facilitate the transfer of one or more substrates between the chamber body and a factory interface of a multi-chamber processing tool. In some embodiments, a selectively sealable second elongated opening 120 (e.g., a second slit valve opening) is provided in the upper portion 106 of the chamber body 102 for conveying one or more substrates into or out of the chamber body 102. For example, the second elongated opening 120 may facilitate the transfer of one or more substrates between the chamber body 102 and a loading gate chamber or other chamber of a multi-chamber processing tool. In some embodiments, the first elongated opening 110 is located opposite the second elongated opening 120.

[0020] The chamber body 102 includes a first end 116 opposite a second end 118, to which a microwave source 144 is coupled. In at least some embodiments, the microwave source 144 is coupled to the chamber body 102 at the first end 116. The microwave source 144 is configured to provide volumetric heating to an internal volume 124 to degas one or more substrates disposed within the internal volume 124. In some embodiments, the microwave source is a variable frequency microwave source, wherein each frequency is effective for a short duration. For example, in some embodiments, the short duration is on the order of milliseconds. In some embodiments, the microwave source provides microwave energy to the chamber body 102 at frequencies from about 5.0 GHz to about 7.0 GHz. In some embodiments, the microwave source 144 provides microwave energy having microwave frequencies from about 5.85 GHz to about 6.65 GHz. In some embodiments, the microwave energy is derived from a wide C-band source. In some embodiments, the scan rate across 4096 frequencies in the C-band is about 0.25 microseconds per frequency. The use of variable frequency and fast scanning prevents the formation of standing waves and the need for charge accumulation and rotating thermal loads. The use of variable frequency also allows for a uniform temperature distribution across the substrate.

[0021] In some embodiments, the first end 116 includes a service door 122, which is selectively sealable and removable from the remainder of the chamber body 102. Advantageously, the service door 122 is removable to allow for the servicing and installation of components within the internal volume 124 of the chamber body 102. A funnel 126 extends from the outer surface of the chamber body 102 to one of the sidewalls 104 to expose the internal volume 124 to microwave energy provided by the microwave source 144. In some embodiments, the funnel 126 may be located within one of the sidewalls 104 defined by the service door 122. In some embodiments, the microwave source 144 provides microwaves of a given wavelength, and the funnel 126 is positioned at least twice the given wavelength away from the nearest portion of the substrate support 136 disposed in the internal volume 124 to provide more uniform heating to one or more substrates when the substrates are disposed on the substrate support 136.

[0022] The second end 118 includes a pump port 132 or discharge port disposed in the chamber body 102 opposite the funnel 126. The pump port 132 is fluidly coupled to a pump 130. The pump 130 may be any pump suitable for discharging degassed material from the internal volume 124 and / or facilitating the maintenance of a desired pressure inside the treatment chamber 100. In some embodiments, a pump adapter 128 is disposed between the pump port 132 and the pump 130 to facilitate coupling various different pumps to the pump port 132.

[0023] In some embodiments, and as shown in FIG1, the substrate support 136 is configured to support a plurality of substrates. For example, in some embodiments, the substrate support 136 includes a plurality of support members 142 oriented and arranged vertically spaced along a common axis of the substrate support (e.g., aligned along a vertical axis). Although three support members 142 are shown, the substrate support 136 may include any number of support members 142. In some embodiments, the plurality of support members 142 are coupled to a base ring 138 disposed below the plurality of support members 142. In some embodiments, the substrate support 136 includes a plurality of lifting members (not shown) corresponding to the plurality of support members 142. The plurality of lifting members may be coupled to a lifting ring 140 disposed below the plurality of lifting members.

[0024] In some embodiments, the base ring 138 is coupled to a first actuator 150, which controls the position of a plurality of support members 142 at least between a transfer position and a processing position. In some embodiments, the lifting ring 140 is coupled to a second actuator 160, which controls the position of a plurality of lifting members 220 independently of the position of the plurality of support members 142. The first actuator 150 and the second actuator 160 may be any suitable linear motion controller, such as a linear drive servo actuator motor, etc. The first actuator 150 and the second actuator 160 may be disposed outside the chamber body 102 and sealed through an opening in the chamber floor 114 of the chamber body 102, for example, with a stainless steel bellows, etc.

[0025] One or more amplifiers may be connected to microwave source 144. For example, one or more SSPAs 117 may be connected to microwave source 144. For example, in at least some embodiments, the SSPAs are connected to microwave source 144 and configured to amplify the power level of the input signal received from microwave source 144 (e.g., for heating the substrate in internal volume 124). For example, in at least some embodiments, the SSPAs 117 are configured to receive an input signal from microwave source 144 from about 0.001 W to about 0.025 W and amplify the received input signal to provide an output power from about 800 W to about 1000 W (e.g., at a frequency from about 5.0 GHz to about 7.0 GHz).

[0026] Continuing to refer to Figures 2 and 3, SSPA 117 includes one or more transistors 200. For example, in at least some embodiments, one or more transistors 200 may include one or more of the following: gallium nitride (GaN) transistor 202, gallium arsenide (GaAs) transistor 204, or other suitable transistors capable of performing the operations described herein.

[0027] In addition, SSPA 117 may include other circuitry to facilitate amplification of the power levels of input signals received from one or more of the aforementioned power sources. For example, in at least some embodiments, SSPA 117 may include at least one of the following: power divider 206, power combiner 208, etc.

[0028] In at least some embodiments, an array 300 of SSPA 117 (FIG. 3) may be provided. The array 300 of SSPA 117 may be configured in various ways. For example, the array 300 of SSPA 117 may include SSPAs, which include one or more of the aforementioned transistors having the same or different rated power (e.g., from about 2 W to about 120 W). The SSPA 117s in the array 300 may be connected in series and / or in parallel with each other. For illustrative purposes, the array 300 is shown as including four rows of SSPAs, each row including four columns of SSPAs (labeled 117a to 117d respectively). Each row includes a first SSPA 117a (e.g., having a rated power of 2 W to about 8 W) connected in series with a second SSPA 117b (e.g., having a rated power of 2 W to about 15 W). Power divider 206 receives an input signal from second SSPA 117b and splits it into two separate output signals, which are input to two third SSPAs 117c connected in parallel (e.g., each with a rated power of 2 W to about 25 W). Each third SSPA 117c provides a corresponding output signal input to a corresponding fourth SSPA 117d (e.g., each with a rated power of 2 W to about 120 W). Each fourth SSPA 117d provides a corresponding output signal input to power combiner 208 (e.g., shown in FIG. 2), which combines the two input signals into a single output signal that can be used as needed, for example, for transmitting power to internal volume 124 (e.g., substrate processing cavity).

[0029] Referring to FIG4, an SSPA 117 (or an array of SSPAs 300) may be disposed on a cooling plate 400. The cooling plate 400 includes one or more cooling channels. For example, in at least some embodiments, one or more cooling channels may include an input channel 402 and an output channel 404 connected to a fluid source 406, which may be connected to the processing chamber 100. The fluid source 406 is configured to provide one or more coolants to the cooling plate 400. For example, in at least some embodiments, the fluid source 406 may be configured to provide chilled water to the cooling plate 400 for cooling amplifiers (e.g., SSPA 117) during operation.

[0030] In embodiments using an array of SSPAs, each SSPA in the array may be mounted on a corresponding cooling plate. Alternatively, some SSPAs in the array may include corresponding cooling plates, and some SSPAs in the array may be mounted on a shared cooling plate. Alternatively, all SSPAs in the array may be mounted on a shared cooling plate.

[0031] The controller 121, including the processor 123, is configured (or programmed) to control the overall operation of the processing chamber 100. For example, the controller 121, under the control of the processor 123, may receive a recipe input into the memory 127 of the processor 123. For example, the memory 127 may be a non-transitory computer-readable storage medium with instructions that, when executed by the processor 123 (or the controller 121), perform the methods described herein. The recipe may include information relating to one or more parameters associated with one or more of the aforementioned components for the processing substrate. For example, the controller 121 may use the information in the recipe to control the microwave source 144, SSPA 117, power divider 206, power combiner 208, input / output signals to and from the SSPA 117, pump 130, fluid source 406, gas source, etc.

[0032] FIG5 is a flowchart of a method 500 for processing a substrate. Method 500 generally begins with supplying power from a power source to an amplifier. For example, in at least some embodiments, controller 121 may control the power supplied to one or more of the aforementioned power sources (e.g., microwave source 144). For example, in at least some embodiments, controller 121 may communicate with microwave source 144 and SSPA 117 to control the power used for heating the substrate.

[0033] Next, at 502, an amplifier including at least one of gallium nitride (GaN) transistors or gallium arsenide (GaAs) transistors is used to amplify the power level of the input signal received from the power source (e.g., microwave source 144). For example, when SSPA 117 is connected to microwave source 144, controller 121 may be configured to control the input / output to and from one or more transistors on SSPA 117, and at 504, an output (e.g., amplified signal) from SSPA 117 to substrate support 136 may be provided for heating the substrate.

[0034] Next, at 506, coolant is supplied to a cooling plate disposed on the amplifier to cool the amplifier during operation. For example, controller 121 may be configured to control fluid source 406 to control the amount of coolant (e.g., chilled water) supplied to cooling plate 400.

[0035] Although the above description pertains to the embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope. [Simplified Explanation of the Diagram]

[0007] The embodiments of the present disclosure, which have been briefly summarized above and discussed in more detail below, can be understood by referring to the illustrative embodiments of the present disclosure depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of the present disclosure and are therefore not to be considered as limiting the scope, as the present disclosure may allow for other equivalent embodiments.

[0008] FIG1 is a schematic cross-sectional view of a processing chamber according to at least some embodiments of the present disclosure.

[0009] Figure 2 is a schematic diagram of an SSPA according to at least some embodiments of the present disclosure.

[0010] FIG3 is a diagram of transistor configuration according to at least some embodiments of the present disclosure.

[0011] Figure 4 is a side view of an SSPA disposed on a cooling plate according to at least some embodiments of the present disclosure.

[0012] FIG5 is a flowchart of a method for processing a substrate according to at least some embodiments of the present disclosure.

[0013] For ease of understanding, the same reference numerals are used as much as possible to represent common elements in the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. [Biomaterial Storage]

[0037] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A processing chamber, comprising: A power source; an amplifier connected to the power source, the amplifier including at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and the amplifier configured to amplify a power level of an input signal received from the power source to heat a substrate in a processing volume, wherein the amplifier is an array of solid-state power amplifiers (SSPAs); a plurality of cooling plates configured to receive a coolant to cool the amplifier during operation, wherein each SSPA of the array is disposed on a corresponding cooling plate of the plurality of cooling plates; and a funnel extending from an outer surface of a chamber body of the processing chamber to a side wall of the processing chamber to expose the processing volume to energy provided by the power source.

2. The processing chamber as described in claim 1, wherein the processing chamber is a degassing processing chamber.

3. The processing chamber as claimed in claim 1, wherein at least one SSPA of the array provides power from about 800 W to about 1000 W.

4. The processing chamber as described in claim 1, wherein the power source is configured to provide power at a frequency from about 5.0 GHz to about 7.0 GHz.

5. The processing chamber as claimed in claim 1, wherein the amplifier includes at least one of the following: a power divider or a power combiner.

6. The processing chamber as described in claim 1, wherein the coolant is chilled water.

7. The processing chamber as claimed in claim 1, wherein each of the plurality of cooling plates includes a plurality of cooling channels configured to allow the coolant to flow within the cooling plate.

8. The processing chamber as claimed in claim 7, further comprising a controller that communicates with the amplifier and is configured to control a flow rate of the coolant through the plurality of cooling channels.

9. The processing chamber as described in any one of claims 1 to 7, wherein each of the plurality of cooling plates is disposed below the amplifier.

10. A method for processing a substrate in a processing chamber, comprising the steps of: using an amplifier to amplify a power level of an input signal received from a power source, the amplifier comprising at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, wherein amplifying the power level of the input signal comprises the steps of: using an array of solid-state power amplifiers (SSPAs); outputting an amplified signal to a substrate support disposed in a processing volume to heat the substrate via a funnel extending from an outer surface of a chamber body of the processing chamber to a side wall of the processing chamber; and supplying a coolant to a plurality of cooling plates disposed on the amplifier to cool the amplifier during operation, wherein each SSPA of the array is disposed on a corresponding cooling plate of the plurality of cooling plates.

11. The method as described in claim 10, wherein the substrate is processed in a degassing chamber.

12. The method as described in claim 10, wherein at least one SSPA of the array provides power from about 800 W to about 1000 W.

13. The method as described in claim 10, wherein the power source is configured to provide power at a frequency from about 5.0 GHz to about 7.0 GHz.

14. The method as described in claim 10, wherein the amplifier includes at least one of the following: a power divider or a power combiner.

15. The method as described in claim 10, wherein circulating the coolant comprises the step of circulating one of the following: a liquid or a gas.

16. The method of claim 10, wherein circulating the coolant comprises the steps of: circulating the coolant through a plurality of cooling channels configured to allow the coolant to flow within the plurality of cooling plates.

17. The method as described in claim 16 further includes the step of using a controller in communication with the amplifier to control the flow rate of the coolant through the plurality of cooling channels.

18. The method as described in any one of claims 10 to 16, wherein each of the plurality of cooling plates is disposed below the amplifier.

19. An apparatus for processing a substrate in a processing chamber, comprising: One memory; and at least one processor coupled to the memory and configured to perform the following operations: using an amplifier to amplify a power level of an input signal received from a power source, the amplifier including at least one of: a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, wherein amplifying the power level of the input signal includes the following steps: using an array of solid-state power amplifiers (SSPAs); outputting an amplified signal to a substrate support disposed in a processing volume to heat the substrate via a funnel extending from an outer surface of a chamber body of the processing chamber to a side wall of the processing chamber; and supplying a coolant to a plurality of cooling plates disposed on the amplifier to cool the amplifier during operation, wherein each SSPA of the array is disposed on a corresponding cooling plate of the plurality of cooling plates.

20. The apparatus as claimed in claim 19, wherein the processing of the substrate is performed in a degassing chamber.

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