Substrate processing apparatus and method

Abstract

This invention proposes a substrate processing apparatus and method, relating to the field of semiconductor equipment technology, including: a clamping mechanism, a nozzle mechanism, a rotary drive mechanism, a heating mechanism, and a control mechanism. The heating mechanism includes a heating plate disposed below the substrate, with at least two cavities radially distributed on the heating plate, each cavity having a different radius. During the movement of the liquid nozzle from the center of the substrate to its edge along the radial direction of the substrate, when the liquid nozzle reaches a certain area above the substrate, the control mechanism controls the thermal energy of the fluid within the cavity corresponding to that area, thereby increasing the local temperature of the substrate below the liquid nozzle.

Description

[Technical Field]

[0001] This invention belongs to the field of semiconductor equipment technology, and particularly relates to substrate processing apparatus and method. [Previous Technology]

[0002] Integrated circuit manufacturing generally refers to substrate fabrication. The substrate fabrication process involves creating a photomask from the design layout, transferring the circuit pattern information from the photomask onto a silicon wafer, and forming the circuit on the bare silicon wafer to construct a complete circuit chip. Integrated circuit manufacturing includes photolithography, etching, deposition, ion implantation, chemical mechanical polishing (CMP), and cleaning. Among these, cleaning is the most complex process, involving the removal of various contaminants and impurities generated during substrate fabrication, and it permeates almost the entire workflow. Contaminants and impurities refer to any substances introduced during integrated circuit manufacturing that negatively impact wafer yield and electrical performance. Specific contaminants include particles, organic matter, metals, and natural oxide layers.

[0003] Semiconductor cleaning technology is mainly divided into two process routes: wet cleaning process and dry cleaning process. In the wet cleaning process, the substrate is generally fixed on a rotatable substrate fixture. During the process, chemical solutions and deionized water are used to process the surface of the rotating substrate. After the wet etching or cleaning process is completed, the substrate is dried.

[0004] Traditional drying processes mostly employ nitrogen purging or isopropyl alcohol (IPA) cleaning combined with high-speed substrate rotation. However, with the development of advanced integrated circuit technology, feature sizes are constantly shrinking. During the drying process, the fine patterns on the substrate vary in size, depth, width, and density, as well as their distance from the rotation axis. The flow and evaporation rates of the liquid adhering to the patterns on the substrate surface also differ. These differences in liquid flow and evaporation rates result in varying liquid levels within different patterns at the same time. Under the influence of liquid surface tension, this leads to uneven stress on adjacent patterns, ultimately causing damage such as collapse, adhesion, and deformation of the fine patterns on the substrate. This, in turn, causes device failure, affects wafer yield, and results in product scrap.

[0005] To prevent damage to the fine patterned structure on the substrate surface during the drying process, precise control of the surface tension and evaporation rate of isopropanol (IPA) or other drying formulation solutions on the substrate surface is crucial. Therefore, this invention proposes a substrate processing apparatus and method. [Summary of the Invention]

[0006] In order to avoid damage to the fine pattern structure on the substrate surface during the drying process, and to improve the precise control of the surface tension and evaporation rate of isopropanol or other drying formulation solutions on the substrate surface during the drying process, the present invention proposes a substrate processing apparatus and method.

[0007] The substrate processing apparatus proposed in this invention includes: a control mechanism; a clamping mechanism configured to hold a substrate; a nozzle mechanism including a liquid nozzle configured to dispense liquid onto the surface of the substrate placed on the clamping mechanism; a rotation drive mechanism configured to drive the clamping mechanism to rotate; and a heating mechanism including a heating plate disposed below the substrate, the heating plate having at least two cavities in the radial direction, each cavity being distributed at a different radius, a fluid inlet being provided at the bottom of the cavity, and a fluid outlet being provided at the top of the cavity, the fluid inlet being connected to a fluid delivery pipe; during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate in the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, the control mechanism controls the thermal energy of the fluid in the cavity located at the corresponding radius of that area, thereby increasing the local temperature of the substrate below the liquid nozzle.

[0008] The present invention also provides a substrate processing method, comprising: holding a substrate on a clamping mechanism; driving the clamping mechanism to rotate the substrate; distributing liquid to the substrate surface through a liquid nozzle of a nozzle mechanism; wherein, during the process of the liquid nozzle moving radially from the center of the substrate to the edge of the substrate above the substrate, when the liquid nozzle moves to a certain area above the substrate, the same radius area on the substrate is locally heated by spraying a fluid with second thermal energy below the substrate, thereby increasing the local temperature of the substrate below the liquid nozzle.

[0009] In summary, the substrate processing apparatus and method provided by the present invention can dynamically and precisely control the heating of the substrate area in zones, and precisely control the temperature of the substrate and the liquid on its surface, thereby achieving the process objective of controlling the surface tension and evaporation rate of the liquid at various points on the substrate surface during the drying process, thereby avoiding damage to the fine pattern structure on the substrate surface during the drying process.

[0010] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures pointed out in the description and the drawings.

Implementation Method

[0012] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0013] Example 1

[0014] Please refer to Figures 1 to 5 and Figures 15 to 19. The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a clamping mechanism 200, a rotation drive mechanism 300, a heating mechanism 400, a control mechanism, and a nozzle mechanism 600. The clamping mechanism 200 is used to hold the substrate 100 in a horizontal state and includes a plurality of positioning pins 201 disposed around the substrate 100. Please refer to Figure 2, which is a partial enlarged view of point A in Figure 1, showing the positions of the substrate 100 and the positioning pins 201 in the substrate processing apparatus of this embodiment, i.e., a three-dimensional structural schematic diagram of the substrate and the positioning pins. Six positioning pins are disposed on the edge of the substrate 100. A limiting groove 2011 is formed on the top sidewall of the positioning pin 201. The bottom wall of the limiting groove 2011 supports the substrate 100, and the sidewall of the limiting groove 2011 clamps the substrate 100. A cylinder (not shown) drives the tensioning mechanism 203 to ensure that the positioning pin 201 can move away from the substrate 100 to release the substrate 100, or move closer to the substrate 100 to clamp the substrate 100, facilitating the fastening and positioning of the substrate 100 and its placement and removal. The clamping mechanism 200 also includes a support portion 202. The bottom end of the positioning pin 201 is detachably connected to the support portion 202. The bottom of the support portion 202 is connected to a rotary drive mechanism 300 via a transmission mechanism (not shown). Exemplarily, in this embodiment, the transmission mechanism is a transmission belt. The rotary drive mechanism 300 can be selected according to actual operational requirements during actual use. Exemplarily, in this embodiment, a servo motor is selected as the rotary drive mechanism 300. The rotary drive mechanism 300 drives the substrate 100 to rotate around a vertical line passing through the center of the substrate 100 via the drive support 202. The support 202 has a through hole in the middle to accommodate some non-rotating components.

[0015] The heating mechanism 400 includes a heating plate and a fluid delivery unit. The heating plate is disposed below the base plate 100 and accommodated in a through hole in the middle of the support portion 202, and is arranged parallel to the base plate 100 during operation. The heating plate consists of a first chuck 401 and a second chuck 402 that are matched together. The first chuck 401 has a locking block, and the second chuck 402 has a locking groove. During installation, the locking block on the first chuck 401 engages with the locking groove on the second chuck 402 to form a stable structure. The first chuck 401 is divided into n equal parts according to an angle, where n is an integer greater than or equal to 2. The first chuck 401 has at least two cavities 4011 in the radial direction. Each cavity 4011 is distributed on different radii of the first chuck 401 in the radial direction. The number of cavities 4011 in each equal part is equal, and the cavities 4011 are distributed on different radii. A fluid inlet 4012 is provided at the bottom of the cavity 4011, and a fluid outlet 4013 is provided at the top of the cavity. The density of the fluid outlets 4013 on the cavity 4011 is the same. A second chuck 402 is disposed below the first chuck 401 to fix and support the first chuck 401 and to connect the first chuck 401 to the fluid delivery unit. The second chuck 402 has a number of first fluid delivery channels 4021 equal to the number of cavities 4011 inside. One end of the first fluid delivery channel 4021 in the second chuck 402 is connected to the fluid inlet 4012 at the bottom of the cavity 4011 in the first chuck 401, and the other end of the first fluid delivery channel 4021 is connected to the fluid delivery unit. During the process, the substrate 100 rotates, while the heating mechanism 400 does not rotate. After the substrate 100 rotates one revolution, the area of ​​the substrate 100 heated by each cavity 4011 is a ring or circle.

[0016] Referring to Figures 5 and 15, the fluid delivery unit includes a shaft 403, a connector 404, a fluid delivery pipe, and a fluid delivery manifold 406. One end of the shaft 403 is fixedly connected to the bottom of the second chuck 402. The shaft 403 has a number of second fluid delivery channels 4031 equal to the number of cavities 4011 inside, and one end of the second fluid delivery channel 4031 communicates with the first fluid delivery channel 4021 inside the second chuck 402. The side wall of the shaft 403 has an equal number of openings equal to the number of second fluid delivery channels 4031. A connector 404 is installed on each opening, and each connector 404 is connected to a fluid delivery pipe. Multiple fluid delivery pipes are simultaneously connected to the same fluid delivery manifold 406.

[0017] The control mechanism includes a switching valve 501, a mass flow controller 502, and a heater 503. Fluid delivery pipes connected to each cavity 4011 are respectively connected to the same fluid delivery main pipe 406. Each fluid delivery pipe is equipped with a switching valve 501 and a heater 503, and the fluid delivery main pipe 406 is equipped with a mass flow controller 502. The switching valve 501 opens or closes the fluid flowing through the fluid delivery pipe; the mass flow controller 502 is configured to monitor and regulate the flow rate of the fluid flowing through the fluid delivery main pipe 406; and the heater 503 is configured to heat the fluid in the fluid delivery pipe. The control mechanism controls the thermal energy of the fluid in the cavity 4011 below the substrate 100 corresponding to the liquid nozzle, thereby increasing the local temperature of the substrate 100 below the liquid nozzle.

[0018] The nozzle mechanism 600 includes a liquid nozzle configured to dispense liquid onto the surface of the substrate 100 placed on the clamping mechanism 200.

[0019] Referring to Figures 6 to 11, in this embodiment of the invention, the layout of the first chuck 401 is designed as follows: the first chuck 401 is divided into four equal parts according to an angle, that is, the first chuck 401 is divided into four quadrants, and the first chuck 401 has 16 cavities 4011 in the radial direction. These 16 cavities 4011 are evenly distributed in the four quadrants of the first chuck 401. Figure 6 is a top view of the layout of the first chuck 401 divided into four equal parts. Figure 7 is a bottom view of the layout of the first chuck 401 divided into four equal parts. Figure 8 is a schematic diagram of the layout structure of the first fluid delivery channel 4021 inside the second chuck 402. Figure 9 is a top view of the shaft 403. Figure 10 shows a perspective schematic diagram of the heating plate structure after the first chuck 401 and the second chuck 402 are assembled. Figure 11 is a schematic diagram of the cross-sectional structure after the first chuck 401 and the second chuck 402 are assembled.

[0020] This device is not only suitable for drying the substrate 100 after the wet etching or cleaning process, but can also be used in the etching process.

[0021] This embodiment of the invention also provides a substrate processing method. Please refer to Figure 15, which shows a schematic diagram of the fluid control pathway relationship in this embodiment. During operation, the clamping mechanism 200 clamps the substrate 100, keeping the substrate 100 horizontally positioned. The nozzle mechanism 600 is located above the substrate 100. The rotation drive mechanism 300 drives the substrate 100 to rotate about a vertical line passing through the center of the substrate 100 via the drive support 202. In this embodiment, the liquid dispensed by the liquid nozzle of the nozzle mechanism 600 to the substrate 100 is dry liquid IPA. Before the liquid nozzle moves to directly above the center of the substrate 100 and dispenses liquid onto the surface of the substrate 100, the control mechanism controls the heater 503 to heat the fluid flowing through the fluid delivery pipe to a first thermal energy. The fluid that has reached the first thermal energy heats the substrate 100 to a first temperature through the fluid outlet 4013 of each cavity 4011. The first temperature is the preheating temperature, and its function is to uniformly heat the entire substrate 100. Taking IPA as an example, the preferred process range is 60-70℃. The first thermal energy refers to the thermal energy required to heat the substrate 100 to the first temperature.

[0022] During the process of the liquid nozzle moving from the center of the substrate 100 to the edge of the substrate 100 in the radial direction of the substrate 100, when the liquid nozzle moves to a certain area above the substrate 100, the control mechanism controls the heater 503 to heat the fluid in the cavity 4011 located on the corresponding radius of the area to the second thermal energy. The fluid that has reached the second thermal energy heats the substrate 100 in the area to the second temperature through the fluid outlet 4013 of the cavity 4011. The second temperature is approximately the temperature at which the liquid dispensed by the liquid nozzle to the substrate 100 reaches the boiling point. In this embodiment, the second temperature is greater than or equal to the boiling point of the liquid. Taking IPA as an example, the preferred process range is 78-85°C.

[0023] For example, before the liquid nozzle dispenses the liquid, the fluid delivered to the cavity 4011 is heated. The fluid is transmitted through the fluid delivery pipe and the second fluid delivery channel 4031 to the first fluid delivery channel 4021 opened in the second chuck 402 of the heating plate. The fluid then enters the cavity 4011 of the first chuck 401 and flows out of the heating plate through the fluid outlet 4013 opened at the top of the cavity 4011, heating the substrate 100 above the heating plate to 70°C.

[0024] When the liquid nozzle dispenses liquid onto the surface of the substrate 100, as the liquid nozzle moves, when the liquid nozzle moves to a certain area above the substrate 100, the control mechanism controls the heater 503 to heat the fluid in the fluid delivery pipe connected to the cavity 4011 located on the corresponding radius of that area, thereby controlling the heat energy of the fluid flowing out of the fluid outlet 4013 of the cavity 4011 on that radius to be the second heat energy, and the fluid that reaches the second heat energy heats the substrate 100 to 80°C through the fluid outlet 4013 of the cavity 4011.

[0025] More specifically, please refer to Figure 7. The 16 cavities 4011 opened on the first chuck 401 are numbered from the center of the first chuck 401 to the edge in order of increasing radius. The specific numbers are 40111, 40112, 40113, 40114, 40115, 40116, 40117, 40118, 40119, 401110, 401111, 401112, 401113, 401114, 401115, and 401116. Please refer to Figure 8 for a schematic diagram of the corresponding second chuck 402. The first fluid delivery channels 4021 connected to the cavity 4011 inside the second chuck 402 are numbered 40211, 40212, 40213, 40214, 40215, 40216, 40217, 40218, 40219, 402110, 402111, 402112, 402113, 402114, 402115, and 402116. Referring to Figure 9, the shaft 403 has a corresponding number of second fluid delivery channels 4031 inside, numbered 40311, 40312, 40313, 40314, 40315, 40316, 40317, 40318, 40319, 403110, 403111, 403112, 403113, 403114, 403115, and 403116. Referring to Figures 10 and 11, both show perspective views of the heating plate structure after the first chuck 401 and the second chuck 402 are assembled. Referring to Figures 5 and 15, shaft 403 is connected via connector 404 to 16 fluid delivery pipes numbered 4051, 4052, 4053, 4054, 4055, 4056, 4057, 4058, 4059, 40510, 40511, 40512, 40513, 40514, 40515, and 40516. Each fluid delivery pipe is equipped with a switching valve 501 and a heater 503. The multiple fluid delivery pipes are connected to a single fluid delivery main pipe 406, which is equipped with a quality flow controller 502.

[0026] Before the liquid nozzle begins dispensing liquid to the substrate 100, the control mechanism controls the heater 503 on each fluid delivery pipe to heat the fluid flowing through the pipe, so that its thermal energy reaches a first thermal energy. Before the fluid's thermal energy reaches the first thermal energy, the fluid is discharged out of the device through the bypass branch pipe 407. The fluid that has reached the first thermal energy heats the substrate 100 to 70°C through the fluid outlet 4013 of each cavity 4011.

[0027] As the liquid nozzle begins to dispense liquid to the substrate 100 and moves radially from the center of the substrate 100 to its edge, when the liquid nozzle moves to a certain area above the substrate 100, the control mechanism controls the heater 503 on the fluid delivery pipe (numbered 4051) connected to the cavity 40111 to start heating, so that the heater 503 heats the fluid flowing through the pipe to the second thermal energy. Specifically, the control mechanism controls the heater 503 on the fluid delivery pipe 4051 to start working and heat the fluid in the pipe. Before the thermal energy of the fluid in the pipe reaches the second thermal energy, the fluid is first discharged to the outside of the device through the bypass branch pipe 407. When the thermal energy of the fluid reaches the target thermal energy, it is then transported to the cavity 40111 through the fluid delivery pipe 4051 to ensure that the thermal energy of the fluid supplied to the heating plate by the pipe reaches the set second thermal energy. Fluid flows out of the heating plate through the fluid outlet 4013 in the cavity 40111 and flows to the substrate 100, heating the area of ​​the substrate 100 corresponding to the radius of the cavity 40111, rapidly raising the temperature of the corresponding location on the substrate 100 to 80°C. The liquid at this location on the substrate 100 vaporizes rapidly. When the vaporization process is fast enough, the drying process occurs not by the liquid itself, but by vaporization, thus reducing surface tension. The surface tension of the liquid is negligible in terms of the pulling force between adjacent feature patterns. During this process, there is no pulling force from the surface tension of the liquid between adjacent feature patterns, effectively preventing damage to the fine pattern structure on the surface of the substrate 100 during the drying process.

[0028] The heated fluid can be a gas, such as clean air, nitrogen or an inert gas; or it can be a liquid.

[0029] When this device is used for IPA drying, the nozzle mechanism 600 also includes a nitrogen nozzle for nitrogen purging.

[0030] When this device is used in a wet etching process, the etching chemical solution or formulation solution is delivered to the rotating substrate surface through the nozzle mechanism to partially etch or completely remove the thin film on the substrate surface.

[0031] In a wet etching process, an etching chemical solution or formulated solution is generally delivered to the surface of a rotating substrate 100 via a nozzle mechanism 600 to partially etch or completely remove the thin film on the surface of the substrate 100. Since temperature is one of the important parameters affecting the etching rate and uniformity, the apparatus of this application and the above-described processing method can achieve precise and dynamic control of the temperature of the substrate and its surface liquid, thereby obtaining good control over the etching rate and uniformity, and improving the processing accuracy and stability of the wet etching process for integrated circuits.

[0032] Wherein, when the etching chemical solution includes, but is not limited to, hydrofluoric acid, ammonia, hydrochloric acid, sulfuric acid, hydrogen peroxide, a mixture of hydrofluoric acid and nitric acid, a mixture of hydrofluoric acid and ammonium fluoride, a mixture of ammonia, hydrogen peroxide and pure water, a mixture of hydrochloric acid, hydrogen peroxide and pure water, the second temperature range is 19-75℃.

[0033] When the etching chemical solution includes, but is not limited to, a mixture of sulfuric acid and hydrogen peroxide, the second temperature range is 80-200℃.

[0034] When the etching chemical solution includes, but is not limited to, phosphoric acid, the second temperature range is 120~165℃.

[0035] Example 2 This embodiment provides a substrate processing device. The structure of the device is basically the same as that of the substrate processing device in Example 1. The difference is that, as shown in Figure 12, the first chuck 401 is divided into two equal parts according to the angle. The first chuck 401 has 16 cavities in the radial direction. The upper end face of each cavity has a uniformly distributed fluid outlet hole 4013. The 16 cavities are evenly distributed in the two regions of the first chuck 401, that is, there are 8 cavities in each region. Figure 12 is a top view of this layout of the first chuck 401.

[0036] The rest of the structure is the same as in Example 1.

[0037] Example 3

[0038] This embodiment provides a substrate processing apparatus. The structure of this apparatus is basically the same as that of the substrate processing apparatus in Embodiment 1. The difference is that, as shown in FIG13, the first chuck 401 is treated as a whole, and 16 cavities are directly formed in the radial direction of the first chuck 401. The upper end face of each cavity has uniformly distributed fluid outlet holes 4013. The 16 cavities 4011 are uniformly arranged in the first chuck 401 with different radii. The 16 cavities 4011 are circular in shape and arranged in concentric circles. FIG13 is a top view of this layout of the first chuck 401.

[0039] The rest of the structure is the same as in Example 1.

[0040] Example 4

[0041] This embodiment provides a substrate processing apparatus. The structure of this apparatus is basically the same as that of the substrate processing apparatus in Embodiment 1. The difference is that, as shown in FIG16, a switching valve 501, a mass flow controller 502, and a heater 503 are respectively arranged on the fluid delivery pipe connected to each cavity. The switching valve 501 is configured to control the switching of the fluid flowing through the fluid delivery pipe; the mass flow controller 502 is configured to monitor and regulate the flow rate of the fluid flowing through each fluid delivery pipe; and the heater 503 is configured to heat the fluid in the fluid delivery pipe. By adjusting the mass flow controller 502 from the fluid delivery main pipe 406 to the fluid delivery pipe, the purpose of both controlling the fluid flow rate by controlling the mass flow controller 502 to control the heating of the substrate 100 by the fluid and controlling the heater 503 to heat the fluid in the fluid delivery pipe and regulate the fluid temperature to control the heating of the substrate 100 by the fluid is achieved. In actual processes, the quality flow controller 502 can be controlled and adjusted independently, the heater 503 can be controlled independently, or both the quality flow controller 502 and the heater 503 can be adjusted simultaneously. These multiple control schemes are adaptable to various situations, offering greater convenience, efficiency, adjustability, controllability, and precision.

[0042] The rest of the structure in this embodiment is the same as in embodiment 1.

[0043] The substrate processing method in this embodiment is basically the same as that in Embodiment 1. The difference is that in this embodiment, the thermal energy of the fluid in each fluid delivery pipe is controlled by the control mechanism to adjust the fluid flow rate in the cavity located on the corresponding radius of the region by controlling the quality flow controller and / or by controlling the heater to adjust the thermal energy of the fluid in the cavity located on the corresponding radius of the region, thereby controlling the thermal energy of the fluid in the cavity 4011 below the substrate 100 corresponding to the liquid nozzle, so that the thermal energy of the fluid ejected from the fluid outlet 4013 on the cavity 4011 reaches the second thermal energy, and the fluid with the second thermal energy heats the substrate 100 to the second temperature. During the process of the liquid nozzle moving from the center of the substrate 100 to the edge of the substrate 100 in the radial direction of the substrate 100, the control mechanism controls the fluid flow rate in the cavity 4011 arranged in the radial direction of the substrate 100 from the center of the substrate 100 to the edge of the substrate 100 to gradually increase, so as to ensure that the substrate 100 in the corresponding region is heated more quickly, and the local temperature of the substrate 100 is rapidly increased to the second temperature.

[0044] When the fluid flow rate is adjusted by controlling the quality flow controller 502 to achieve the second thermal energy, the control mechanism adjusts the fluid flow rate by the quality flow controller 502 according to the actual heating area and uniformity requirements of the substrate 100, thereby achieving the above-mentioned purpose and effect.

[0045] Please refer to Figures 14a and 14b for details. The flow velocity of the jet and the trajectory of the fluid jet flowing out of the fluid outlet 4013 are shown. By adjusting the quality flow controller 502 on each fluid delivery pipe, the flow velocity of the fluid flowing out of the fluid outlet 4013 can be changed, thereby changing the size of the θ angle. The 2θ angle is the apex angle of the cone formed by the boundary of the fluid jet trajectory. The greater the flow velocity, the smaller the θ angle. Under this flow velocity condition, the heating area of ​​the substrate 100 corresponding to the cavity 4011 is smaller; the smaller the flow velocity, the larger the θ angle. Under this flow velocity condition, the heating area of ​​the substrate 100 corresponding to the cavity 4011 is larger. When the θ angle is larger, it indicates that the heating area of ​​the substrate 100 by the fluid ejected through the fluid outlet 4013 is larger, and it is possible to preheat the substrate 100 area corresponding to the cavity 4011 while heating the substrate 100 area corresponding to this cavity 4011. Therefore, when it is necessary to heat the substrate 100 area corresponding to the adjacent cavity, the time required for the substrate 100 to reach the required temperature will be reduced, resulting in higher efficiency.

[0046] In this embodiment, when the heat energy contained in the fluid is regulated by the heater 503, the control method is the same as that in Embodiment 1.

[0047] Example 5

[0048] This embodiment provides a substrate processing apparatus, the structure of which is basically the same as that of the substrate processing apparatus in Embodiment 1. The difference is that, as shown in FIG17, the fluid delivery pipe connected to each cavity is respectively connected to a first fluid delivery branch pipe and a second fluid delivery branch pipe. A switch valve 501a is installed on the first fluid delivery branch pipe and a switch valve 501b is installed on the second fluid delivery branch pipe.

[0049] A first fluid delivery branch pipe is connected to a first fluid delivery main pipe 4061, and a second fluid delivery branch pipe is connected to a second fluid delivery main pipe 4062. A quality flow controller 502a and a heater 503a are installed on the first fluid delivery main pipe 4061, and a quality flow controller 502b and a heater 503b are installed on the second fluid delivery main pipe 4062. The switching valves 501a and 501b are configured to open or close the fluid flowing through their respective fluid delivery branch pipes; the quality flow controllers 502a and 502b are configured to monitor and regulate the flow rate of the fluid flowing through the first fluid delivery main pipe 4061 and the second fluid delivery main pipe 4062; and the heaters 503a and 503b are configured to heat the fluid in the first fluid delivery main pipe 4061 and the second fluid delivery main pipe 4062. A bypass branch pipe 407a is connected to the first fluid delivery main pipe 4061, and a bypass branch pipe 407b is connected to the second fluid delivery main pipe 4062.

[0050] The rest of the structure in this embodiment is the same as in embodiment 1.

[0051] The substrate processing method corresponding to this embodiment is basically the same as that in embodiment 1. The difference is that in this embodiment, the fluid transport main pipe is configured as two main pipes 4061 and 4062, and each fluid transport pipe is connected to two fluid transport branch pipes, which are respectively connected to the two fluid transport main pipes 4061 and 4062.

[0052] During the process of the control mechanism controlling the heating mechanism 400 to heat the substrate 100, firstly, all the switch valves 501a on the first fluid delivery branch pipes connected to the first fluid delivery main pipe 4061 are opened, and the heater 503a is controlled to heat the fluid flowing through the first fluid delivery main pipe 4061. This fluid flows through the fluid outlet 4013 of each cavity through the first fluid delivery branch pipe and each fluid delivery pipe to preheat the entire substrate 100 to the first temperature. Before the thermal energy of the fluid in the first fluid delivery main pipe 4061 reaches the first thermal energy, the fluid is discharged from the device through the bypass branch pipe 407a.

[0053] During the process of the liquid nozzle moving radially from the center of the substrate to the edge of the substrate 100, when the liquid nozzle moves to a certain area above the substrate 100, the switch valve 501a on the first fluid delivery branch pipe connected to the cavity corresponding to the radius of the heating plate in that area is closed, and at the same time the switch valve 501b on the second fluid delivery branch pipe is opened, controlling the heating of the fluid flowing through the second fluid delivery main pipe 4062 connected to the cavity below the substrate 100 corresponding to the liquid nozzle position. The fluid heats the corresponding area of ​​the substrate 100 to the second temperature through the fluid outlet 4013 of the cavity. Before the thermal energy of the fluid in the second fluid delivery main pipe 4062 reaches the second thermal energy, the fluid is discharged to the outside of the device through the bypass branch pipe 407b.

[0054] By setting two fluid delivery mains 4061 and 4062, and the fluids in the two fluid delivery mains 4061 and 4062 have different thermal energies, the first fluid delivery main 4061 can preheat the entire substrate 100 to keep the substrate 100 stably warm. The second fluid delivery main 4062 heats the fluid in the second fluid delivery main 4062 to have a second thermal energy before delivering the fluid to each fluid delivery pipe. When flowing to each fluid delivery pipe, the temperature switching is faster, the control of heating the substrate 100 is more precise, and the working efficiency is higher.

[0055] Example 6

[0056] This embodiment provides a substrate processing apparatus, the structure of which is basically the same as that of the substrate processing apparatus in Embodiment 5. The difference is that, as shown in FIG18, the fluid delivery pipes connected to each cavity are respectively connected to a first fluid delivery branch pipe, a second fluid delivery branch pipe, and a third fluid delivery branch pipe. A switch valve 501a is installed on the first fluid delivery branch pipe, a switch valve 501b is installed on the second fluid delivery branch pipe, and a switch valve 501c is installed on the third fluid delivery branch pipe. The first fluid delivery branch pipe is connected to the first fluid delivery main pipe 4061, the second fluid delivery branch pipe is connected to the second fluid delivery main pipe 4062, and the third fluid delivery branch pipe is connected to the third fluid delivery main pipe 4063. A bypass branch pipe 407a is connected to the first fluid delivery main pipe 4061, and a bypass branch pipe 407b is connected to the second fluid delivery main pipe 4062. A quality flow controller 502a, 502b, and 502c are installed on the first, second, and third fluid transport mains 4061, 4062, and 4063, respectively. A heater 503a and 503b are installed on the first and second fluid transport mains 4061 and 4062, respectively. The on / off valves 501a, 501b, and 501c are configured to open or close the fluid flowing through their respective fluid transport branch pipes; the quality flow controllers 502a, 502b, and 502c are configured to monitor and regulate the flow rate of the fluid flowing through each fluid transport main 4061, 4062, and 4063; and the heaters 503a and 503b are configured to heat the fluid in the first and second fluid transport mains 4061 and 4062.

[0057] The rest of the structure in this embodiment is the same as in embodiment 1.

[0058] After the substrate 100 is removed from the clamping mechanism 200, the heating plate needs to be cooled in order to proceed with the next substrate process. At this time, the switch valves 501a and 501b provided on the first fluid delivery branch pipe and the second fluid delivery branch pipe connected to the first and second fluid delivery main pipes 4061 and 4062 are closed, and the switch valve 501c provided on the third fluid delivery branch pipe connected to the fluid delivery main pipe 4063 is opened, so that the low temperature fluid is delivered to each cavity of the heating plate to rapidly cool the heating plate, accelerate the cooling speed of the heating plate, and improve process efficiency.

[0059] The cryogenic fluid here is a fluid with a temperature lower than that of room temperature. The cryogenic fluid flows out from the fluid outlet 4013 of the heating plate and overflows to the surroundings, flowing through the clamping mechanism 200. While cooling the heating plate, it also cools the clamping mechanism 200.

[0060] During the cooling process, in order to prevent the frequent switching of heaters 503a and 503b from affecting their service life, the fluid in the first fluid delivery main pipe 4061 and the second fluid delivery main pipe 4062 is discharged to the outside of the device through bypass branch pipes 407a and 407b. When the next substrate 100 enters the device to prepare for drying, the fluid with the required heat energy can be quickly switched to accurately control the regional temperature of the substrate 100.

[0061] Example 7

[0062] This embodiment provides a substrate processing apparatus, the structure of which is basically the same as that of the substrate processing apparatus in Embodiment 1. The difference is that, as shown in FIG19, the fluid delivery pipes connected to each cavity are respectively connected to a first fluid delivery branch pipe, a second fluid delivery branch pipe, and a third fluid delivery branch pipe. A switch valve 501a is installed on the first fluid delivery branch pipe, a switch valve 501b is installed on the second fluid delivery branch pipe, and a switch valve 501c is installed on the third fluid delivery branch pipe. The first fluid delivery branch pipe is connected to the first fluid delivery main pipe 4061, the second fluid delivery branch pipe is connected to the second fluid delivery main pipe 4062, and the third fluid delivery branch pipe is connected to the third fluid delivery main pipe 4063. A quality flow controller 502a, 502b, 502c and a heater 503a, 503b, 503c are installed on each of the first, second, and third fluid delivery main pipes 4061, 4062, and 4063. Among them, the switching valves 501a, 501b, and 501c are configured to open or close the fluid flowing through their respective fluid delivery branch pipes. The quality flow controllers 502a, 502b, and 502c are configured to monitor and regulate the flow rate of the fluid flowing through each fluid delivery main pipe 4061, 4062, and 4063; the heaters 503a, 503b, and 503c are configured to heat the fluid in each fluid delivery main pipe 4061, 4062, and 4063. The first fluid delivery main pipe 4061 is connected to a bypass branch pipe 407a, the second fluid delivery main pipe 4062 is connected to a bypass branch pipe 407b, and the third fluid delivery main pipe 4063 is connected to a bypass branch pipe 407c.

[0063] The rest of the structure in this embodiment is the same as that in embodiment 1.

[0064] The substrate processing method corresponding to this embodiment is basically the same as that in embodiment 1. The difference is that in this embodiment, the fluid transport main pipe is set as a three-way main pipe, and each fluid transport pipe is connected to three fluid transport branch pipes, and the three fluid transport branch pipes are respectively connected to the three-way fluid transport main pipe.

[0065] During the process of the control mechanism 500 controlling the heating mechanism 400 to heat the substrate 100, the control mechanism controls the heater 503a to heat the fluid flowing through the first fluid delivery main pipe 4061, and the heated fluid heats the substrate 100 to the first temperature through the fluid outlet 4013 of each cavity.

[0066] During the process of the liquid nozzle moving from the center of the substrate 100 to the edge of the substrate 100 in the radial direction along the substrate 100, when the liquid nozzle moves to a certain area above the substrate 100, the switch valves 501a and 501c on the first fluid delivery branch pipe connected to the cavity corresponding to the radius of the heating plate in that area are closed. At the same time, the switch valve 501b on the second fluid delivery branch pipe connected to the fluid delivery pipe connected to the cavity is opened, and the valves adjacent to the cavity in the radial direction gradually moving away from the center of the heating plate are also opened. The switch valve 501c on the third fluid delivery branch pipe connected to the fluid delivery pipe of the cavity controls the fluid flowing through the second fluid delivery main pipe 4062 connected to the cavity below the substrate 100 corresponding to the liquid nozzle position. The fluid heats the substrate 100 in the corresponding area of ​​the cavity to the second temperature through the fluid outlet 4013 opened in the cavity. At the same time, the fluid in the third fluid delivery main pipe 4063 that has reached the third thermal energy preheats the corresponding area of ​​the substrate 100 to the third temperature through the fluid outlet 4013 opened in the adjacent cavity.

[0067] The third temperature is the temperature for reheating. The third temperature is higher than the first temperature and lower than the second temperature. In this embodiment, the third temperature is set to be lower than the boiling point of the liquid. For example, for IPA, the preferred process range is 70-78℃.

[0068] By setting up three fluid delivery mains 4061, 4062, and 4063, the thermal energy of the fluids in the three fluid delivery mains 4061, 4062, and 4063 is different, and the fluids in the three fluid delivery mains 4061, 4062, and 4063 are already heated inside the fluid delivery mains. When delivering fluid to each fluid delivery main, it is not necessary to reheat it inside the fluid delivery main, avoiding the situation that affects the precise temperature control of the destination area. The first fluid delivery main 4061 supplies heat-insulating fluid to preheat the substrate 100. The third fluid delivery main 4063 supplies fluid at a temperature higher than that supplied by the first fluid delivery main 4061 to reheat the substrate 100. The second fluid delivery main 4062 supplies fluid that can bring the liquid distributed by the nozzle to a temperature close to the boiling point, so as to rapidly heat the substrate 100 after the liquid is distributed, achieving the purpose of rapid drying. It is worth noting that the third reheating fluid is supplied to a cavity adjacent to the cavity below the substrate 100 corresponding to the liquid nozzle in a radial direction that is gradually moving away from the center of the heating plate.

[0069] More specifically, please refer to Figure 7. When the liquid nozzle moves above the substrate 100 corresponding to the cavity 40111, the substrate 100 is driven to rotate by the rotation drive mechanism 300, and the liquid nozzle dispenses liquid to the annular or circular area. When the cavity 40111 is fan-shaped, the area corresponding to the liquid dispensed by the liquid nozzle is a circular area; when the cavity 40111 is arc-shaped, the area corresponding to the liquid dispensed by the liquid nozzle is an annular area. At this time, the opening and closing status of the switch valves on the fluid delivery branch pipe connected to cavity 40111 is as follows: the switch valve 501a on the first fluid delivery branch pipe connected to the first fluid delivery main pipe 4061 is closed, the switch valve 501b on the second fluid delivery branch pipe connected to the second fluid delivery main pipe 4062 is open, and cavity 40111 is supplied with fluid at the second temperature; the switch valve 501c on the third fluid delivery branch pipe connected to the third fluid delivery main pipe 4063 is closed. At the same time, in the radial direction gradually moving away from the center of the heating plate, the opening and closing status of the switch valves on the fluid delivery branch pipe connected to cavity 40112 adjacent to cavity 40111 is as follows: the switch valve 501a on the first fluid delivery branch pipe connected to the first fluid delivery main pipe 4061 is closed, the switch valve 501b on the second fluid delivery branch pipe connected to the second fluid delivery main pipe 4062 is closed, and the switch valve 501c on the third fluid delivery branch pipe connected to the third fluid delivery main pipe 4063 is open, and cavity 40112 is supplied with fluid with the third thermal energy. As the liquid nozzle continues to move towards the edge, leaving cavity 40111 and reaching cavity 40112, the opening and closing status of the switch valves on the fluid delivery branch pipe connected to cavity 40112 is as follows: the switch valve 501a on the first fluid delivery branch pipe connected to the first fluid delivery main pipe 4061 is closed, the switch valve 501b on the second fluid delivery branch pipe connected to the second fluid delivery main pipe 4062 is open, and cavity 40112 is supplied with fluid having the second thermal energy; the switch valve 501c on the first fluid delivery branch pipe connected to the third fluid delivery main pipe 40631 is closed. At the same time, in the radial direction gradually moving away from the center of the heating plate, cavity 40113 adjacent to cavity 40112 is supplied with fluid having the third thermal energy, and so on, until the nozzle moves to the edge of the substrate 100, completing the heating and drying process.

[0070] Furthermore, the fluid delivery main pipe can be configured as a four-way main pipe, a five-way main pipe, etc., according to actual conditions, to meet the target requirement of more precise control of the drying temperature of the substrate 100. For example, when the fluid delivery main pipe is configured as a four-way main pipe, each fluid delivery pipe is connected to four fluid delivery branch pipes, and each fluid delivery branch pipe is equipped with a switch valve. When the liquid nozzle moves above the substrate 100 corresponding to cavity 40111 and dispenses liquid to the substrate 100, the opening and closing status of the valves on the fluid delivery branch pipes connected to cavity 40111 is as follows: the valve on the first fluid delivery branch pipe connected to the first fluid delivery main pipe is closed, the valve on the second fluid delivery branch pipe connected to the second fluid delivery main pipe is open, and cavity 40111 is supplied with fluid having second thermal energy; the valve on the third fluid delivery branch pipe connected to the third fluid delivery main pipe is closed, and the valve on the fourth fluid delivery branch pipe connected to the fourth fluid delivery main pipe is closed. Simultaneously, in the radial direction gradually moving away from the center of the heating plate, the opening and closing status of the valves on the four fluid delivery branch pipes connected to cavity 40112 adjacent to cavity 40111 is as follows: the valve on the first fluid delivery branch pipe connected to the first fluid delivery main pipe is closed, and the second fluid delivery branch pipe is open. The valves on the second fluid delivery branch connected to the main fluid delivery pipe are closed, the valves on the third fluid delivery branch connected to the main fluid delivery pipe are open, and the cavity 40112 is supplied with fluid containing the third thermal energy. The valves on the fourth fluid delivery branch connected to the main fluid delivery pipe are closed. At the same time, in the radial direction gradually moving away from the center of the heating plate, the opening and closing status of the valves on the four fluid delivery branch pipes connected to the cavity 40113 adjacent to the cavity 40112 is as follows: the valves on the first fluid delivery branch connected to the main fluid delivery pipe are closed, the valves on the second fluid delivery branch connected to the main fluid delivery pipe are closed, the valves on the third fluid delivery branch connected to the main fluid delivery pipe are closed, and the valves on the fourth fluid delivery branch connected to the main fluid delivery pipe are open, and the cavity 40113 is supplied with fluid containing the fourth thermal energy. In this design, the first temperature is the heat preservation temperature, the second temperature is approximately the temperature at which the liquid dispensed from the liquid nozzle to the substrate 100 reaches its boiling point, and the third and fourth temperatures are preheating temperatures. The third and fourth temperatures can be the same or different, but both the third and fourth temperatures must be higher than the first temperature and lower than the second temperature. Setting the preheating temperature below the boiling point ensures that the liquid in that area is in a non-boiling state before the liquid nozzle reaches it.

[0071] A substrate processing method includes: holding the substrate on a clamping mechanism; driving the clamping mechanism to rotate the substrate; distributing liquid to the substrate surface through a liquid nozzle of a nozzle mechanism; during the process of the liquid nozzle moving radially from the center of the substrate to the edge of the substrate above the substrate, when the liquid nozzle moves to a certain area above the substrate, locally heating the same radius area on the substrate by spraying a fluid with second thermal energy below the substrate, thereby increasing the local temperature of the substrate below the liquid nozzle.

[0072] Furthermore, before distributing liquid to the substrate surface through the liquid nozzle of the nozzle mechanism, the method further includes: spraying a fluid with first thermal energy under the entire substrate to preheat the entire substrate.

[0073] Furthermore, while locally heating the region of the same radius on the substrate by spraying a fluid with a second thermal energy under the substrate corresponding to the region, a fluid with a third thermal energy is sprayed under the substrate corresponding to the adjacent region in the radial direction to reheat it.

[0074] Furthermore, the fluid is a gas or a liquid.

[0075] Furthermore, by controlling the temperature and / or flow rate of the fluid with second thermal energy, the local temperature of the substrate below the liquid nozzle is increased by locally heating the same radius area on the substrate.

[0076] Furthermore, it also includes cooling the heating plate by introducing a low-temperature fluid after the substrate is removed from the clamping mechanism.

[0077] Example 8

[0078] This embodiment provides a substrate processing apparatus. The structure of this apparatus is basically the same as that of the substrate processing apparatus in Embodiment 1. The difference is shown in Figure 20, which shows a cross-sectional structural diagram of the first chuck and the second chuck after assembly according to this embodiment. As shown in Figure 20, a heating element 408 is provided between the first chuck 401 and the second chuck 402. The heating element 408 is used to heat the fluid in the cavity 4011 and to heat the first chuck 401 as a whole. During the process, the number of heating elements 408 can be one or more depending on the heating requirements. When the number of heating elements 408 is greater than one, the installation position and structure of the heating elements 408 can be set according to actual needs. In this embodiment, the case where the number of heating elements 408 is one is mainly described. In this embodiment, the heating element 408 is a plate-shaped structure, and a connecting hole 4081 is provided on the heating element 408 to connect the first fluid delivery channel 4021 and the fluid inlet hole 4012. Referring to Figure 5, when fluid flows through the second fluid delivery channel 4031 inside the shaft 403 and the first fluid delivery channel 4021 inside the second chuck 402 to the cavity 4011 on the first chuck 401, the fluid will flow through the connecting hole 4081 on the heating element 408 and the fluid inlet hole 4012 on the first chuck 401 to enter the cavity 4011. The heating element 408 directly heats the fluid in the cavity 4011. At the same time, the plate-shaped heating element 408 directly contacts the first chuck 401, which directly heats the entire first chuck 401 through thermal radiation, causing the temperature of the first chuck 401 to rise simultaneously. Thus, when preheating the substrate 100, the preheating effect can be achieved more quickly.

[0079] During the process, when the fluid enters the second fluid delivery channel 4031 inside the shaft 403 through the fluid delivery pipe of each branch, flows through the first fluid delivery channel 4021 inside the second chuck 402 and the fluid inlet 4012 of the first chuck 401 to reach the cavity 4011, because each component is at room temperature, while the fluid contains high thermal energy, the temperature of the fluid will be higher than that of the components it flows through. Therefore, the fluid will undergo convective heat transfer with the components it flows through, transferring heat to each component, thus reducing the thermal energy contained in the fluid itself, resulting in insufficient thermal energy of the fluid flowing out of the cavity 4011. When the fluid flows to the substrate 100, the temperature at the corresponding position of the substrate 100 cannot be quickly heated to the target temperature, which affects the vaporization and drying effect of the liquid on the substrate 100. Adjacent feature patterns may still be pulled by the surface tension of the liquid, and the feature patterns may be damaged, affecting the yield of the substrate 100 process.

[0080] In this embodiment of the invention, a heating element 408 is provided between the first chuck 401 and the second chuck 402. During the process, when the fluid enters the second fluid delivery channel 4031 inside the shaft 403 through each fluid delivery pipe and flows through the first fluid delivery channel 4021 inside the second chuck 402, it will flow through the fluid inlet hole 4012 on the first chuck 401 and enter the cavity 4011. The heating element 408 heats the fluid inside the cavity 4011, increases the thermal energy of the fluid, and raises the thermal energy of the fluid to meet the requirement of rapidly heating the temperature of the corresponding position of the substrate 100 to the target temperature. The fluid flows out of the heating plate through the fluid outlet hole 4013 opened on the cavity 4011 and flows to the substrate 100 to rapidly heat the substrate 100. The heating element 408 can perform secondary heating of the fluid, further ensuring that the temperature at the corresponding position of the substrate 100 is quickly heated to the target temperature, ensuring that the vaporization process of the liquid at that position on the substrate 100 is fast enough, and that there is no pulling of liquid surface tension between adjacent feature patterns, thereby effectively preventing the fine pattern structure on the surface of the substrate 100 from being damaged during the drying process.

[0081] The rest of the structure in this embodiment is the same as that in embodiment 1.

[0082] The substrate processing method corresponding to this embodiment is basically the same as that in Embodiment 1. The difference is that in this embodiment, when the control mechanism controls the heater 503 to heat the fluid during the process, the heating element 408 is turned on simultaneously, and the heating temperature of the heating element 408 is preset. It should be understood that the heating temperature of the heating element 408 can be set according to the actual process requirements and is not limited in this invention. For example, the heating temperature of the heating element 408 in this embodiment is set to 80°C to prepare for convection heating of the fluid that is about to reach the cavity 4011 opened inside the first chuck 401.

[0083] Example 9

[0084] This embodiment provides a substrate processing apparatus. The structure of this apparatus is basically the same as that of the substrate processing apparatus in Embodiment 8. The difference is shown in Figure 21, which is a schematic cross-sectional view of the first chuck and the second chuck after assembly according to this embodiment. As shown in Figure 21, the substrate processing apparatus also includes a cooling mechanism, which includes a cooling section disposed on the first chuck 401. The actual selection of the cooling section includes, but is not limited to, a cooling tank, a cooling cavity, a cooling pipe, and various combinations thereof. The specific type can be selected according to the actual process requirements. The cooling section is configured to reduce the temperature of the first chuck 401 or the second chuck 402, thereby avoiding the first chuck 401 or the second chuck 402 from being too hot after the current process operation, which would affect the RCA process (chemical standard process) of the next substrate 100.

[0085] When the cooling unit is configured to reduce the temperature of the first chuck 401, the cooling unit is set up in the cooling process in ways including but not limited to the following:

[0086] In the first embodiment, the cooling section 701 is a cooling pipe. Please refer to Figure 22, which shows a schematic diagram of the structure when the cooling section is a cooling pipe and located inside the first chuck in this embodiment of the invention. As shown in Figure 22, the cooling section 701 is embedded inside the first chuck 401. Furthermore, a receiving cavity is respectively opened on the periphery of each cavity 4011 of the first chuck 401, and the cooling section 701 is built into the opened receiving cavity.

[0087] In the second embodiment, the cooling section 701 is a cooling pipe. Please refer to Figure 23, which shows a schematic diagram of the structure when the cooling section is a cooling pipe and located on the upper surface of the first chuck in this embodiment of the invention. As shown in Figure 23, the cooling section 701 is disposed on the upper surface of the first chuck 401, and a cooling section 701 is correspondingly disposed above each cavity 4011. Specifically, a receiving groove is opened on the upper surface of the first chuck 401, and the cooling section 701 is placed inside the opened receiving groove. At the same time, a sealing layer 410 is provided on the upper surface of the first chuck 401. After the cooling section 701 is placed in the receiving groove, the sealing layer 410 is fixedly connected to the first chuck 401 to seal the opening end of the receiving groove. In the actual design process, the number and shape of the cooling sections 701 can be selected according to actual needs. In this embodiment of the invention, the cooling pipes disposed in the corresponding areas of several cavities 4011 are the same cooling pipe. Please refer to Figure 24 for the specific structure, which shows a schematic diagram of the structure of the cooling pipe in this embodiment of the invention. As shown in Figure 24, the cooling pipe has a disc-shaped structure.

[0088] For the third method, please refer to Figure 25, which shows a schematic diagram of the structure where the cooling part is a cooling cavity in an embodiment of the present invention. As shown in Figure 25, when the cooling part 701 is a cooling cavity, the cooling cavity is opened inside the first chuck 401. It can be understood that this method is the first method of removing the cooling pipe, and the cooling cavity directly serves as the execution method of the cooling part 701.

[0089] The fourth method is illustrated in Figure 26, which shows a schematic diagram of a cooling tank as the cooling part in an embodiment of the present invention. As shown in Figure 26, when the cooling part 701 is a cooling tank, the cooling tank is opened on the upper end face of the first chuck 401. Similarly, a sealing layer 410 is provided on the upper end face of the first chuck 401, and the sealing layer 410 is fixedly connected to the first chuck 401 to seal the opening end of the cooling tank. It can be understood that this method is the second method of removing the cooling pipe, and the cooling tank directly serves as the cooling part 701.

[0090] Furthermore, a protective layer is provided on the first chuck 401, and the sealing layer 410 provided on the upper surface of the first chuck 401 can also serve as a protective layer. For example, when the cooling unit 701 is designed in the second or fourth manner described above, and the sealing layer 410 serves as a protective layer, the sealing layer 410 is made of a material with good corrosion resistance, high temperature resistance, and heat insulation properties, such as Teflon. The Teflon sealing layer 410 can prevent the chemical solution from corroding the first chuck 401 during the process. When the cooling unit 701 is designed in the second or fourth manner described above, and the sealing layer 410 and the protective layer are independently provided, the protective layer simultaneously covers the upper surface, side surface, and outer surface of the sealing layer 410 and the first chuck 401. In this embodiment, Teflon material with good corrosion resistance, high temperature resistance, and heat insulation properties is still used as the protective layer. When the cooling section 701 is designed according to the first or third method described above, since the sealing layer 410 is not provided, it is only necessary to cover the outer surface of the first chuck 401 with a protective layer. In this embodiment, Teflon material with good corrosion resistance, high temperature resistance, and heat insulation performance is still used as the protective layer. The protective layer helps to isolate heat inside the heating plate.

[0091] By selecting the third and fourth methods as the cooling section, the design of cooling pipes is eliminated, and the design of cooling tanks and cooling chambers is carried out directly on the first chuck 401, which makes the device preparation simpler and saves costs.

[0092] When the cooling section 701 is configured to reduce the temperature of the second chuck 402, the second method described above can be used, i.e., the cooling section 701 is a cooling pipe directly embedded inside the second chuck 402, or the third method is to directly open a cavity in the second chuck 402, and this cavity is designed as the cooling section 701. Considering the convenience of operation in actual processes, in this embodiment, the design method of directly opening a cavity in the second chuck 402 as the cooling cavity is selected. As shown in FIG27, FIG27 shows an exemplary schematic diagram of the cooling mechanism cooling the second chuck according to an embodiment of the present invention.

[0093] Please refer to FIG28, which shows an exemplary schematic diagram of the cooling mechanism for cooling the first chuck according to an embodiment of the present invention. As shown in FIG28, in conjunction with FIG22, FIG23, FIG25, FIG26, or FIG27, the liquid inlet of the cooling section 701 is connected to the coolant inlet 4022 opened on the second chuck 402, and the coolant inlet 4022 is connected to the third fluid delivery channel 4032 opened inside the shaft body 403; the liquid outlet of the cooling section 701 is connected to the coolant outlet 4023 opened on the second chuck 402, and the coolant outlet 4023 is connected to the fourth fluid delivery channel 4033 opened inside the shaft body 403; the bottom of the shaft body 403 is provided with a connector 4041 connected to the third fluid delivery channel 4032 and a connector 4042 connected to the fourth fluid delivery channel 4033.

[0094] In one embodiment, the inlet of the cooling section 701 is connected to a delivery pipe, which passes through the coolant inlet 4022 opened on the second chuck 402 and the third fluid delivery channel 4032 opened inside the shaft 403 to reach the outside and connect to the connector 4041; the outlet of the cooling section 701 is connected to a delivery pipe, which passes through the coolant outlet 4023 opened on the second chuck 402 and the fourth fluid delivery channel 4033 opened inside the shaft 403 to reach the outside and connect to the connector 4042.

[0095] The connector 4041 connected to the third fluid delivery channel 4032 is connected to at least one inlet pipe for delivering liquid into the cooling section 701. In this embodiment of the invention, the connector 4041 is selected to be connected to one inlet pipe 40222 for delivering liquid into the cooling section 701. The number of inlet pipes connected to the connector 4041 for delivering liquid into the cooling section 701 can be selected according to requirements. A cooler 402221 for cooling the liquid flowing through the inlet pipe is provided on the inlet pipe for delivering liquid into the cooling section 701. The connector 4042 connected to the fourth fluid delivery channel 4033 is connected to at least one drain pipe for discharging liquid from the cooling section 701. In this embodiment of the invention, the connector 4042 is selected to be connected to one drain pipe 40224 for discharging liquid from the cooling section 701. A switching valve is respectively installed on the inlet pipe 40222 and the outlet pipe 40224. The switching valve is configured to open or close the liquid flowing through the inlet pipe 40222 and the outlet pipe 40224. As shown in Figure 28, in this embodiment of the invention, a switching valve 4043 is installed on the inlet pipe 40222 and a switching valve 4046 is installed on the outlet pipe 40224.

[0096] Furthermore, the connector 4041 connected to the third fluid delivery channel 4032 is connected to at least one air inlet pipe for supplying gas into the cooling section 701. In this embodiment of the invention, the connector 4041 is connected to one air inlet pipe 40221 for supplying gas into the cooling section 701, and the number of air inlets for supplying gas into the cooling section 701 can be selected according to actual needs. The connector 4042 connected to the fourth fluid delivery channel 4033 is connected to at least one exhaust pipe for discharging gas from the cooling section 701. In this embodiment of the invention, the connector 4042 is connected to one exhaust pipe 40223 for discharging gas from the cooling section 701. A switch valve for opening or closing the gas flowing through the air inlet pipe 40221 and the exhaust pipe 40223 is also respectively provided on the air inlet pipe 40221 and the exhaust pipe 40223. As shown in Figure 28, in this embodiment of the invention, an on / off valve 4044 is configured on the intake pipe 40221, and an on / off valve 4045 is configured on the exhaust pipe 40223.

[0097] In one embodiment, the first chuck 401 is made of metal. For example, in this embodiment, the material of the first chuck 401 may include, but is not limited to, Hastelloy, aluminum alloy, and nickel-based alloy. Since the first chuck 401 is made of metal, it has good thermal conductivity and fast heat dissipation. The heat-insulating and corrosion-resistant sealing layer 410 can prevent the first chuck 401 from dissipating heat too quickly during the process, thus affecting the heating effect of the fluid on the substrate 100. The second chuck 402 is made of non-metallic material. For example, the material of the second chuck 402 is selected as a high-temperature and corrosion-resistant plastic. In this embodiment, the material of the second chuck 402 may include, but is not limited to, PEEK and Teflon. Based on the different thermal conductivity and coefficient of thermal expansion of different materials, the first chuck 401 is made of a metallic material with high thermal conductivity and low coefficient of thermal expansion, while the second chuck 402 is made of a non-metallic material with low thermal conductivity.

[0098] After the drying process of the hot fluid on the substrate 100 is completed, the temperature of the first chuck 401 is too high, which may affect the drying of the next substrate 100. The cooling mechanism in this embodiment of the invention has a better cooling effect on the first chuck 401 after the drying process.

[0099] In another embodiment, the first chuck 401 is made of a non-metallic material. For example, in this embodiment, the first chuck 401 is made of a high-temperature resistant and corrosion-resistant plastic. For example, the first chuck 401 in this embodiment includes, but is not limited to, PEEK and Teflon. The second chuck 402 is made of a metallic material. For example, in this embodiment, the second chuck 402 is made of aluminum alloy, Hastelloy, nickel-based alloy, etc. Based on the different thermal conductivity and coefficient of thermal expansion of different materials, the first chuck 401 in this embodiment uses a non-metallic material with low thermal conductivity to ensure that heat loss is small when the fluid passes through the first chuck 401. At the same time, it avoids the first chuck 401 becoming too hot after the current process operation, which could affect the RCA process (chemical standard process) of the next substrate 100. The second chuck 402 is made of a metallic material with a low coefficient of thermal expansion to ensure that the second chuck 402 is not easily deformed when the hot fluid passes through it. The first chuck 401 and the second chuck 402 support each other. The low coefficient of thermal expansion of the second chuck 402 also provides support for the first chuck 401, preventing the first chuck 401 from deforming.

[0100] Furthermore, referring to Figures 25 and 26, an insulation layer 409 is provided between the second chuck 402 and the heating element 408. By providing the insulation layer 409, the heat of the heating element 408 is isolated above the second chuck 402, so as to achieve the effect of using more heat to heat the fluid inside the cavity 4011.

[0101] Furthermore, in this embodiment of the invention, the second chuck 402 is coated with an anti-corrosion layer to prevent corrosion of the metal material second chuck 402 caused by chemical solutions and the process environment during the process, thereby protecting the machine tool. For example, in this embodiment, the anti-corrosion layer is a Teflon coating.

[0102] The rest of the structure in this embodiment is the same as that in embodiment 8.

[0103] The substrate processing method in this embodiment is basically the same as that in embodiment 8. The difference is that in this embodiment, the control mechanism is also configured to control the cooling mechanism to cool the first chuck 401 or the second chuck 402.

[0104] Specifically, after the process of heating and drying the substrate 100 in different areas is completed, the control mechanism opens the valves 4043 and 4046 on the liquid inlet pipe 40222 and the liquid outlet pipe 40224 connected to the liquid inlet and outlet of the cooling section 701; the cooler 402221 controls the temperature of the liquid flowing through the liquid inlet pipe 40222 to a low temperature. In this embodiment of the invention, a low temperature refers to a temperature range below 20°C. The cooled low-temperature liquid enters the cooling section 701 through the third fluid transport channel 4032 opened inside the shaft 403, the coolant inlet 4022, and the liquid inlet of the cooling section 701, and then passes through the first chuck 4. The first chuck 401 or the second chuck 402 is cooled down, and then the liquid flows out of the cooling section 701 from the outlet of the cooling section 701, the coolant outlet 4023, and the fourth fluid delivery channel 4033 opened inside the shaft body 403. The liquid is discharged through the drain pipe 40224 connected to the outlet of the cooling section 701. The time for introducing the low temperature liquid is T1 time, so that the overall temperature of the first chuck 401 or the second chuck 402 is reduced to the normal temperature. Then, the valves 4043 and 4046 on the cooler 402221 and the inlet pipe 40222 and drain pipe 40224 connected to the inlet and outlet of the cooling section 701 are closed.

[0105] Furthermore, when the overall temperature of the first chuck 401 or the second chuck 402 drops to room temperature, after closing the valves 4043 and 4046 on the liquid inlet pipe 40222 and the liquid outlet pipe 40224 that connect the cooler 402221 and the cooling section 701, the control mechanism opens the valve 4044 on the gas inlet pipe 40221 and the gas outlet pipe 40223 that connect the cooling section 701 and the cooling section 701. 4045; Gas enters the cooling section 701 through the third fluid delivery channel 4032, coolant inlet 4022, and coolant inlet of the cooling section 701, and flows out of the cooling section 701 through the coolant outlet 4023, coolant outlet 4023, and the fourth fluid delivery channel 4033, and is discharged through the exhaust pipe 40223 connected to the coolant outlet of the cooling section 701. The gas flow time T2 inside the cooling section 701 is controlled to dry the inside of the cooling section 701. Preferably, in order to accelerate the drying speed, in this embodiment of the invention, the gas introduced into the cooling section 701 is a drying gas.

[0106] After the cooling mechanism is processed for T1 time and T2 time, the first chuck 401 or the second chuck 402 quickly returns to normal temperature, and the environment inside the cooling section 701 also returns to a dry state.

[0107] In summary, in one embodiment of the drying process, the substrate 100 is rotated at 1100 rpm, the fluid flow rate reaching the first thermal energy is 280 L, and the fluid temperature reaching the first thermal energy is 80°C. The substrate processing method provided by this invention is used for processing. The experimental results are shown in Figure 29, which illustrates the temperature curve change when the substrate is preheated using the fluid reaching the first thermal energy according to an embodiment of this invention. As shown in Figure 29, through simulation experiments, the surface temperature of the substrate 100 can reach 70°C from room temperature within 15 seconds.

[0108] Figures 30a to 30c illustrate the temperature change curves of different regions of the substrate as the liquid nozzle moves during substrate processing according to the substrate processing methods of Embodiments 1, 4, and 5 of the present invention. Referring to Figures 15, 16, 17, and 30a to 30c, in one embodiment, the drying fluid is still IPA as an example. When drying the substrate 100 using the methods of Embodiments 1, 4, and 5, one cavity 4011 on the first chuck 401 is designated as R. Then, in the radial direction, the cavity 4011 adjacent to R near the center of the first chuck 401 is designated R-1, the cavity 4011 adjacent to R near the edge of the first chuck 401 is designated R+1, and the cavity 4011 adjacent to R+1 is designated R+2. Wherein, R is a positive integer greater than or equal to 1. When R equals 1, it indicates that the liquid nozzle is located at the center of the substrate 100. Before the liquid nozzle moves directly above the center of the substrate 100 and dispenses liquid onto the surface of the substrate 100, the control mechanism controls the heater 503 to heat the fluid flowing through the fluid delivery pipe to a first thermal energy. The fluid that has reached the first thermal energy heats the substrate 100 to a first temperature through the fluid outlet 4013 of each cavity 4011. The first temperature is the preheating temperature. In this embodiment, the preheating temperature is 70°C. According to the experimental results shown in Figure 29, the surface of the substrate 100 reaches 70°C from room temperature within 15 seconds, and the preheating of the substrate 100 is completed.

[0109] As the liquid nozzle moves radially from the center of the substrate 100 to the edge of the substrate 100, when the liquid nozzle moves to a certain area above the substrate 100, the control mechanism controls the heater 503 to heat the fluid in the cavity 4011, numbered R-1, located at the corresponding radius of that area, to a second thermal energy. The fluid that has reached the second thermal energy heats the substrate 100 in that area to a second temperature through the fluid outlet 4013 of the cavity 4011. The second temperature of the process is 82°C, and the temperature of the substrate 100 in that area rapidly increases from 70°C to 82°C. As shown in FIG30a, at this time, away from the cavity 4011 numbered R-1 in the radial direction, for example, the temperature of the cavities numbered R, R+1, and R+2 remains in the preheating completed state, i.e., 70°C. When the liquid nozzle moves to the next region in the radial direction above the substrate 100, that is, when the liquid nozzle moves to the region above the substrate 100 corresponding to the cavity 4011 numbered R, the control mechanism also controls the heater 503 to heat the fluid in the cavity 4011 numbered R on the radius of that region to the second thermal energy. The fluid that has reached the second thermal energy heats the substrate 100 in that region to the second temperature through the fluid outlet 4013 of the cavity 4011. The second temperature of the process is 82°C. The temperature of the substrate 100 in that region increases rapidly from 70°C to 82°C, and so on, until the entire surface of the substrate 100 is processed.

[0110] In another embodiment, the drying fluid is still IPA. When the substrate 100 is dried using the substrate processing method of Embodiment 7, please refer to Figures 19 and 31a to 31c. Figures 31a to 31c show the temperature change curves of different areas of the substrate as the liquid nozzle moves when the substrate is processed according to the substrate processing method of Embodiment 7 of the present invention. Similarly, let R be the number of one of the cavities 4011 on the first chuck 401. Then, in the radial direction, the cavity 4011 adjacent to the center of the first chuck 401 and numbered R is numbered R-1, the cavity 4011 adjacent to the edge of the first chuck 401 and numbered R+1, and the cavity 4011 adjacent to the cavity 4011 numbered R+1 is numbered R+2. The control mechanism controls the heater 503a to heat the fluid flowing through the first fluid delivery manifold 4061. The heated fluid then heats the substrate 100 to a first temperature, i.e., 70°C, through the fluid outlet 4013 of each cavity, thus completing the preheating of the substrate 100.

[0111] During the subsequent substrate processing, as the liquid nozzle moves radially from the center of the substrate 100 towards the edge of the substrate 100, when the liquid nozzle reaches a certain area above the substrate 100, the switching valves 501a and 501c on the first fluid delivery branch pipe connected to the cavity 4011 (numbered R-1) on the heating plate corresponding to that area are closed. Simultaneously, the switching valve 501b on the second fluid delivery branch pipe connected to the fluid delivery pipe of that cavity is opened. At the same time, the switching valve 501c on the third fluid delivery branch pipe connected to the fluid delivery pipe of the adjacent cavity 4011 (numbered R) in the radial direction gradually moving away from the center of the heating plate is opened. The switching valves 501a and 501c on the first fluid delivery branch pipe are closed. When the valve 501b on the pipe is closed, the fluid flowing through the second fluid delivery manifold 4062 connected to the cavity below the substrate 100 corresponding to the liquid nozzle position is controlled. This fluid heats the substrate 100 in the area corresponding to the cavity 4011 to a second temperature, i.e., 82°C, through the fluid outlet 4013 opened in the cavity 4011 numbered R-1. During this process, the temperature change curve of the area of ​​the substrate 100 corresponding to the cavity 4011 numbered R-1 is shown in Figure 31a. At the same time, the fluid in the third fluid delivery manifold 4063 that has reached the third thermal energy preheats the area of ​​the substrate 100 to a third temperature, i.e., 78°C, through the fluid outlet 4013 opened in the adjacent cavity 4011 numbered R-1. During this process, the temperature change curve of the area of ​​the substrate 100 corresponding to the cavity 4011 numbered R-1 is shown in Figure 31b. As shown in Figures 31a, 31b, and 31c, at this time, the temperature of cavity 4011 numbered R, which is far away from R-1 in the radial direction, is reheated to 78°C; the temperature of cavities numbered R+1 and R+2 remains at the preheating completed state, i.e., 70°C. When the liquid nozzle continues to move to the next region in the radial direction above the substrate 100, that is, when the liquid nozzle moves to the region above the substrate 100 corresponding to cavity 4011 numbered R, the control mechanism also controls the switch valve 501a on the first fluid delivery branch pipe connected to the fluid delivery pipe connected to cavity 4011 numbered R and the switch valve 501c on the third fluid delivery branch pipe to close, and opens the switch valve 501b on the second fluid delivery branch pipe connected to the fluid delivery pipe connected to cavity 4011 numbered R, so that the fluid reaching the second thermal energy heats the substrate 100 in this region to the second temperature through the fluid outlet 4013 of cavity 4011. The second temperature of the process is 82°C, and the temperature of the substrate 100 in this region increases rapidly from 78°C to 82°C. At this time, the region of substrate 100 corresponding to cavity 4011 numbered R+1 is in a state of reheating to the third temperature, that is, 78°C.At this time, the valves 501a and 501c on the first and third fluid delivery branches connected to the fluid delivery pipe of cavity 4011 (numbered R+1) are both closed, while the valve 501b on the second fluid delivery branch is open. The temperature of the substrate 100 in this area rapidly increases from 70°C to 78°C. This process continues until the entire surface of the substrate 100 is processed. Here, R is a positive integer greater than or equal to 1. When R equals 1, it indicates that the liquid nozzle is located at the center of the substrate 100. When the liquid nozzle is at the center of the substrate 100, it is possible to either preheat the cavity 4011 closest to the center of the substrate 100 again, or directly heat it to the second temperature. Because the central area of ​​the substrate 100 is relatively small, the difference between the two methods is minimal and will not significantly affect the process results.

[0112] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention. [Simplified Explanation of the Diagram]

[0011] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Figure 1 shows a three-dimensional structural schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; Figure 2 shows a partial enlarged view of point A in Figure 1; Figure 3 shows a front view of the substrate processing apparatus according to an embodiment of the present invention; Figure 4 shows a top view of the substrate processing apparatus according to an embodiment of the present invention; Figure 5 shows a schematic diagram of section BB in Figure 4; Figure 6 shows a top view of a layout of a first chuck divided into four equal parts according to an embodiment of the present invention; Figure 7 shows a bottom view of a layout of a first chuck divided into four equal parts according to an embodiment of the present invention; Figure 8 shows a schematic diagram of the layout structure of the first fluid delivery channel inside the second chuck according to an embodiment of the present invention; Figure 9 shows a top view of the shaft according to an embodiment of the present invention; Figure 10 shows a perspective schematic diagram of the heating plate structure after the first chuck and the second chuck are assembled according to an embodiment of the present invention; Figure 11 shows a schematic diagram of the cross-sectional structure after the first chuck and the second chuck are assembled according to an embodiment of the present invention; Figure 12 shows a top view of a layout of a first chuck divided into two equal parts according to an embodiment of the present invention; Figure 13 shows a top view of the layout of the first chuck in embodiment 3 of the present invention; Figures 14a and 14b show schematic diagrams of the relationship between fluid flow rate and heating area according to an embodiment of the present invention; Figure 15 shows a control path diagram of the substrate processing method according to embodiment 1 of the present invention; Figure 16 shows a control path diagram of the substrate processing method according to Embodiment 4 of the present invention; Figure 17 shows a control path diagram of the substrate processing method according to Embodiment 5 of the present invention; Figure 18 shows a control path diagram of the substrate processing method according to Embodiment 6 of the present invention;Figure 19 shows a control path diagram of the substrate processing method according to Embodiment 7 of the present invention; Figure 20 shows a cross-sectional structural diagram of the first chuck and the second chuck after assembly according to Embodiment 8 of the present invention; Figure 21 shows a cross-sectional structural diagram of the first chuck and the second chuck after assembly according to Embodiment 9 of the present invention; Figure 22 shows a structural diagram of the cooling part being a cooling pipe and located inside the first chuck in Embodiment 9 of the present invention; Figure 23 shows a structural diagram of the cooling part being a cooling pipe and located on the upper end face of the first chuck in Embodiment 9 of the present invention; Figure 24 shows a structural diagram of the cooling pipe in Embodiment 9 of the present invention; Figure 25 shows a structural diagram of the cooling part being a cooling cavity in Embodiment 9 of the present invention; Figure 26 shows a structural diagram of the cooling part being a cooling tank in Embodiment 9 of the present invention; Figure 27 shows an exemplary schematic diagram of the cooling mechanism cooling the second chuck according to an embodiment of the present invention; Figure 28 shows an exemplary schematic diagram of the cooling mechanism cooling the first chuck in Embodiment 9 of the present invention; Figure 29 shows a temperature curve change diagram of the substrate being preheated using a fluid reaching the first thermal energy according to an embodiment of the present invention; Figures 30a and 30c illustrate temperature change curves in different regions of the substrate as the liquid nozzle moves during substrate processing according to the substrate processing methods of Embodiments 1, 4, and 5 of the present invention; and Figures 31a and 31c illustrate temperature change curves in different regions of the substrate as the liquid nozzle moves during substrate processing according to the substrate processing method of Embodiment 7 of the present invention.

Claims

1. A substrate processing apparatus, comprising: Control mechanism; A clamping mechanism is configured to hold the substrate; A nozzle mechanism includes a liquid nozzle configured to dispense liquid onto the surface of a substrate placed on a clamping mechanism; a rotary drive mechanism configured to drive the clamping mechanism to rotate; and a heating mechanism including a heating plate disposed below the substrate, the heating plate having at least two cavities radially distributed at different radii, each cavity having a fluid inlet at the bottom and a fluid outlet at the top, the fluid inlet being connected to a fluid delivery pipe. During the movement of the liquid nozzle from the center of the substrate to the edge of the substrate along the radial direction, when the liquid nozzle moves to a region above the substrate, a control mechanism controls the thermal energy of the fluid in the cavity at the corresponding radius of that region, thereby increasing the local temperature of the substrate below the liquid nozzle. Before dispensing liquid onto the front side of the substrate via the liquid nozzle moving above the substrate, the heating mechanism controls the spraying of a fluid with first thermal energy onto the entire back side of the substrate to preheat the entire substrate.

2. The substrate processing apparatus according to claim 1, wherein, The heating mechanism also includes a fluid delivery unit, which is equipped with a heater for heating the fluid within the fluid delivery unit.

3. The substrate processing apparatus according to claim 1, wherein, The heating plate includes: a first chuck and a second chuck, wherein the first chuck is disposed above the second chuck, and the second chuck is matched with the first chuck; the first chuck has at least two cavities in the radial direction, each cavity being distributed at a different radius in the radial direction of the first chuck, and a fluid inlet is provided at the bottom of the cavity and a fluid outlet is provided at the top of the cavity; the second chuck has a first fluid delivery channel inside, equal in number to the number of cavities, and the first fluid delivery channel is connected to the cavity through the fluid inlet.

4. The substrate processing apparatus according to claim 3, wherein, The heating plate is divided into n equal parts according to the angle, where n is an integer greater than or equal to 2.

5. The substrate processing apparatus according to claim 4, wherein, The number of cavities in each section is equal, and the cavities are distributed on different radii.

6. The substrate processing apparatus according to claim 1, wherein, The at least two cavities are circular in shape and arranged in concentric circles.

7. The substrate processing apparatus according to claim 1, wherein, The fluid flowing through the cavity is either gas or liquid.

8. The substrate processing apparatus according to claim 1, wherein, The fluid outlet holes in each cavity of the heating plate have the same density.

9. The substrate processing apparatus according to claim 1, wherein, Each cavity is connected to a fluid delivery pipe, which is connected to the same fluid delivery main pipe. Each fluid delivery pipe is equipped with a switch valve and a heater. The fluid delivery main pipe is equipped with a quality flow controller. The switch valve is configured to open or close the fluid flowing through the fluid delivery pipe. The quality flow controller is configured to monitor and regulate the flow rate of the fluid flowing through the fluid delivery main pipe. The heater is configured to heat the fluid in each fluid delivery pipe.

10. The substrate processing apparatus according to claim 9, wherein, The control mechanism is configured to: open the switch valve; control the heater to heat the fluid flowing through the fluid delivery pipe to a first thermal energy, and the fluid reaching the first thermal energy heats the substrate to a first temperature through the fluid outlet of each cavity; during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, control the heater to heat the fluid in the cavity located on the corresponding radius of that area to a second thermal energy, and the fluid reaching the second thermal energy heats the corresponding area of ​​the substrate to a second temperature through the fluid outlet of that cavity.

11. The substrate processing apparatus according to claim 1, wherein, Each cavity is connected to a fluid delivery pipe and is equipped with a switch valve, a mass flow controller, and a heater. The switch valve is configured to open or close the fluid flowing through the fluid delivery pipe. The mass flow controller is configured to monitor and regulate the flow rate of the fluid flowing through each fluid delivery pipe. The heater is configured to heat the fluid in the fluid delivery pipe.

12. The substrate processing apparatus according to claim 11, wherein, The control mechanism is configured to: open the switch valve; control the heater to heat the fluid flowing through the fluid delivery pipe to a first thermal energy, and the fluid reaching the first thermal energy heats the substrate to a first temperature through the fluid outlet of each cavity; during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate in the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, the flow rate of the fluid in the cavity located on the corresponding radius of the area is adjusted by controlling the quality flow controller and / or the temperature of the fluid in the cavity located on the corresponding radius of the area is adjusted by controlling the heater, so that the fluid in the cavity located on the corresponding radius of the area reaches a second thermal energy, and the fluid reaching the second thermal energy heats the corresponding area of ​​the substrate to a second temperature through the fluid outlet of the cavity.

13. The substrate processing apparatus according to claim 1, wherein, Each cavity is connected to a fluid delivery pipe which is connected to two fluid delivery branch pipes. Each fluid delivery branch pipe is connected to a fluid delivery main pipe. Each fluid delivery branch pipe is equipped with a switch valve. Each fluid delivery main pipe is equipped with a mass flow controller and a heater. The switch valve is configured to open or close the fluid flowing through the fluid delivery branch pipe. The mass flow controller is configured to monitor and regulate the flow rate of the fluid flowing through each fluid delivery main pipe. The heater is configured to heat the fluid in each fluid delivery main pipe.

14. The substrate processing apparatus according to claim 13, wherein, The control mechanism is configured to: adjust the fluid flow rate by controlling the quality flow controller and / or adjust the fluid temperature by controlling the heater, so that the fluid flowing through the first fluid delivery main reaches a first thermal energy and the fluid flowing through the second fluid delivery main reaches a second thermal energy; open the switch valve on the first fluid delivery branch pipe, so that the fluid reaching the first thermal energy heats the substrate to a first temperature through the fluid outlet of each cavity; during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate in the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, control the switch valve on the first fluid delivery branch pipe connected to the cavity connected to the cavity in the corresponding radius of the area to close, and at the same time open the switch valve on the second fluid delivery branch pipe connected to the fluid delivery pipe connected to the cavity, so that the fluid reaching the second thermal energy in the second fluid delivery main pipe heats the corresponding area of ​​the substrate to a second temperature through the fluid outlet of the cavity.

15. The substrate processing apparatus according to claim 1, wherein, Each cavity is connected to a fluid delivery pipe, which is connected to three fluid delivery branch pipes. Each fluid delivery branch pipe is connected to a fluid delivery main pipe. Each fluid delivery branch pipe is equipped with a switch valve, and each fluid delivery main pipe is equipped with a mass flow controller. A heater is installed on the fluid delivery main pipe connected to the first and second fluid delivery branch pipes. The switch valve is configured to open or close the fluid flowing through the fluid delivery branch pipes. The mass flow controller is configured to monitor and regulate the flow rate of the fluid flowing through each fluid delivery main pipe. The heater is configured to heat the fluid in each fluid delivery main pipe.

16. The substrate processing apparatus according to claim 15, wherein, After the substrate is removed from the clamping mechanism, the switch valves on the first and second fluid delivery branches are closed, and the switch valve on the third fluid delivery branch is opened to introduce low-temperature fluid into the fluid delivery main pipe connected to the third fluid delivery branch. The low-temperature fluid flows through each cavity to cool the heating plate.

17. The substrate processing apparatus according to claim 1, wherein, Each cavity is connected to a fluid delivery pipe that is connected to three fluid delivery branch pipes. The first fluid delivery branch pipe is connected to the first fluid delivery main pipe, the second fluid delivery branch pipe is connected to the second fluid delivery main pipe, and the third fluid delivery branch pipe is connected to the third fluid delivery main pipe. Each fluid delivery branch pipe is equipped with a switch valve, and each fluid delivery main pipe is equipped with a mass flow controller and a heater. The switch valve is configured to open or close the fluid flowing through the fluid delivery branch pipe; the mass flow controller is configured to monitor and regulate the flow rate of the fluid flowing through each fluid delivery main pipe; and the heater is configured to heat the fluid in each fluid delivery main pipe.

18. The substrate processing apparatus according to claim 17, wherein, The control mechanism is configured to: adjust the fluid flow rate by controlling the quality flow controller and / or adjust the fluid temperature by controlling the heater, so that the fluid in the first fluid delivery main reaches a first thermal energy, the fluid in the second fluid delivery main reaches a second thermal energy, and the fluid in the third fluid delivery main reaches a third thermal energy; open the switch valve on the first fluid delivery branch pipe connected to each fluid delivery pipe, so that the fluid reaching the first thermal energy heats the substrate to a first temperature through the fluid outlet of each cavity; during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, control the switch valve on the first fluid delivery branch pipe connected to the fluid delivery pipe connected to the cavity in the corresponding radius of the area to close, and at the same time open the switch valve on the second fluid delivery branch pipe connected to the fluid delivery pipe connected to the cavity, so that the fluid in the second fluid delivery main pipe reaching the second thermal energy heats the corresponding area of ​​the substrate to a second temperature through the fluid outlet of the cavity; At the same time, the switch valve on the third fluid delivery branch pipe, which is connected to the fluid delivery pipe of the cavity adjacent to the cavity in the radial direction gradually away from the center of the heating plate, is opened. The fluid in the third fluid delivery main pipe that has reached the third thermal energy heats the corresponding area of ​​the substrate to the third temperature through the fluid outlet hole opened in the cavity adjacent to the cavity. The first temperature is lower than the third temperature, and the third temperature is lower than the second temperature.

19. The substrate processing apparatus according to claim 3, further comprising: A heating element disposed between the first chuck and the second chuck is used to heat the fluid in the at least two cavities.

20. The substrate processing apparatus according to claim 19, wherein, It also includes: a cooling mechanism, which includes a cooling section disposed on the first chuck and used to reduce the temperature of the first chuck.

21. The substrate processing apparatus according to claim 20, wherein, A sealing layer is provided on the upper surface of the first chuck.

22. The substrate processing apparatus according to claim 21, wherein, The cooling section is a cooling tank, which is located on the upper surface of the first chuck.

23. The substrate processing apparatus according to claim 21, wherein, The cooling section is a cooling pipe. The upper end face of the first chuck is provided with a receiving groove, and the cooling pipe is disposed in the receiving groove. Each cavity is provided with a corresponding cooling pipe.

24. The substrate processing apparatus according to claim 20, wherein, The cooling section is a cooling chamber, which is located inside the first chuck.

25. The substrate processing apparatus according to claim 20, wherein, The first chuck is covered with a protective layer.

26. The substrate processing apparatus according to claim 20, wherein, The cooling section is a cooling pipe. The first chuck has a receiving cavity inside, and the cooling pipe is built into the receiving cavity. Each cavity is provided with a corresponding cooling pipe.

27. The substrate processing apparatus according to claim 20, wherein, The first chuck is made of metal; the second chuck is made of non-metal.

28. The substrate processing apparatus according to claim 19, wherein, It also includes: a cooling mechanism, which includes a cooling section disposed on the second chuck for reducing the temperature of the second chuck.

29. The substrate processing apparatus according to claim 28, wherein, The cooling section is a cooling chamber, which is located inside the second chuck.

30. The substrate processing apparatus according to claim 29, wherein, The first chuck is made of non-metallic material; the second chuck is made of metallic material.

31. The substrate processing apparatus according to claim 19, wherein, An insulation layer is provided between the second chuck and the heating element.

32. The substrate processing apparatus according to claim 20 or 28, wherein, The inlet of the cooling section is connected to at least one inlet pipe for supplying liquid into the cooling section, and a cooler is provided on the inlet pipe for cooling the liquid flowing through the inlet pipe; the outlet of the cooling section is connected to at least one drain pipe for discharging the liquid from the cooling section.

33. The substrate processing apparatus according to claim 32, wherein, The liquid inlet of the cooling section is also connected to at least one air inlet pipe for supplying gas into the cooling section; the liquid outlet of the cooling section is also connected to at least one exhaust pipe for discharging gas from the cooling section.

34. The substrate processing apparatus according to claim 33, wherein, Each of the liquid inlet pipe, liquid outlet pipe, air inlet pipe, and air outlet pipe is equipped with a switch valve.

35. The substrate processing apparatus according to claim 34, wherein, The control mechanism is also configured to control the cooling mechanism to reduce the temperature of the first chuck or the second chuck.

36. The substrate processing apparatus according to claim 35, wherein, The control mechanism is further configured to: after the substrate is heated and dried in different areas, open the valves on the inlet and outlet pipes connected to the inlet and outlet of the cooling section; control the temperature of the liquid flowing through the inlet pipe to cool the cooler; allow the cooled liquid to enter the cooling section through the inlet for a duration of T1, thereby reducing the overall temperature of the first or second chuck to room temperature; and close the valves on the inlet and outlet pipes connected to the cooler and the inlet and outlet of the cooling section.

37. The substrate processing apparatus according to claim 36, wherein, The control mechanism is further configured to: close the valves on the inlet pipe and outlet pipe connected to the inlet and outlet of the cooler and cooling section, then open the valves on the inlet pipe and outlet pipe connected to the inlet and outlet of the cooling section; control the gas flow through the cooling section for a time T2 to dry the interior of the cooling section, and then close the valves on the inlet pipe and outlet pipe connected to the inlet and outlet of the cooling section.

38. The substrate processing apparatus according to claim 37, wherein, The gas introduced into the cooling section is a dry gas.

39. A substrate processing method, comprising: Hold the substrate on the clamping mechanism; drive the clamping mechanism to rotate the substrate; Liquid is dispensed onto the substrate surface via a liquid nozzle of a nozzle mechanism. As the liquid nozzle moves radially from the center of the substrate to the edge of the substrate above the substrate, when the liquid nozzle moves to a certain area above the substrate, a region of the same radius on the substrate is locally heated by spraying a fluid with second thermal energy onto the area below the substrate, thereby increasing the local temperature of the substrate below the liquid nozzle. Specifically, before dispensing liquid onto the front side of the substrate via the liquid nozzle that has moved above the substrate, a fluid with first thermal energy is sprayed onto the entire back side of the substrate to preheat the entire substrate.

40. The substrate processing method according to claim 39, wherein, While locally heating the region of the substrate with the same radius by spraying a fluid with a second thermal energy under the substrate corresponding to the region, a fluid with a third thermal energy is sprayed under the substrate corresponding to the adjacent region in the radial direction for reheating.

41. The substrate processing method according to claim 39, wherein, The fluid can be a gas or a liquid.

42. The substrate processing method according to claim 39, wherein, By controlling the temperature and / or flow rate of a fluid with secondary thermal energy, a localized heating process is performed on a region of the same radius on the substrate, thereby increasing the local temperature of the substrate below the liquid nozzle.

43. The substrate processing method according to claim 39, wherein, It also includes cooling the heating plate by introducing a low-temperature fluid after the substrate is removed from the clamping mechanism.

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