Semiconductor processing apparatus, method of modulating temperature of quadruple-chamber-module (QCM) apparatus, and method for flowable gap-fill deposition

Abstract

This document describes a reactor chamber configuration in which the base is equipped with one or more heaters or radiators with fan-shaped, separate temperature control functionality. In some embodiments, the heaters, incorporating an active cooling mechanism, can be configured to compensate for temperature nonuniformity caused by adjacent structures, such as heat sources and radiators. In some embodiments, separate temperature control can be achieved by using multiple independently heated or cooled zones within each base.

Description

Technical Field

[0001] In semiconductor and liquid crystal display (LCD) manufacturing tools, pedestal heaters are used to heat a substrate. During heat treatment, the pedestal holds and heats the semiconductor wafer, attempting to generate a substantially uniform temperature profile on the wafer. In a typical reaction chamber, the surface temperature of the pedestal heater can be affected by the surrounding environment, including the reactor chamber walls operating at varying temperatures and other heat sources (e.g., hot lamps or electrodes). Prior Technology

[0002] Conventional pedestal heaters are known to fail to generate substantially uniform temperature profiles on substrate surfaces, especially in multi-station reaction chambers. Therefore, novel methods and apparatus are needed to increase temperature uniformity in semiconductor processing systems.

[0003] Conventional pedestal heaters are known to fail to generate substantially uniform temperature profiles on substrate surfaces, especially in multi-station reaction chambers. Therefore, novel methods and apparatus are needed to increase temperature uniformity in semiconductor processing systems. Summary of the Invention

[0004] For the purposes of this invention, certain aspects, advantages, and novel features of the invention are described herein. It should be understood that not all such advantages are necessarily achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or practiced in a manner that achieves one or a set of advantages as taught herein without necessarily achieving other advantages that may be taught or suggested herein.

[0005] Some embodiments herein relate to a semiconductor processing apparatus comprising: a process chamber including two or more stations; a first base within a first station, the first base including: an independently controlled fan-shaped first heating or cooling element configured to provide independently heated or cooled to a first heating zone on a surface of the first base; and an independently controlled fan-shaped second heating or cooling element configured to provide independently heated or cooled to a second heating zone on a surface of the first base; and a second base within a second station, the second base including a... A heater; and a controller including a processor and memory, the memory providing instructions for: using a first heating or cooling element to heat or cool a first heating zone; using a second heating or cooling element to heat or cool a second heating zone, wherein heat supplied to or removed from the first heating zone is different from heat supplied to or removed from the second heating zone, and wherein the first heating zone and the second heating zone on the surface of the first base are heated or cooled to a substantially uniform first temperature; and using a heater to heat the second base to a second temperature, wherein the second temperature is higher than the first temperature.

[0006] In some embodiments, the first base further includes: an independently controlled fan-shaped third heating or cooling element configured to provide independently heated or cooled to a third heating zone on the surface of the first base; and an independently controlled fan-shaped fourth heating or cooling element configured to provide independently heated or cooled to a fourth heating zone on the surface of the first base.

[0007] In some embodiments, the controller provides further instructions to the device to control the device to: heat or cool a third heating zone of the first base using a third heating or cooling element; and heat a fourth heating zone of the first base using a fourth heating or cooling element. In some embodiments, heat supplied to or removed from the third heating zone is different from heat supplied to or removed from the first, second, and fourth heating zones. In some embodiments, the first, second, third, and fourth heating zones are heated or cooled to a substantially uniform first temperature. In some embodiments, heat supplied to or removed from the fourth heating zone is different from heat supplied to or removed from the first, second, and third heating zones. In some embodiments, the first temperature is less than 150 °C. In some embodiments, the second temperature is greater than 150 °C.

[0008] In some embodiments, a first heating or cooling element includes a cooling element, and heating or cooling a first heating region includes allowing a coolant to flow through the cooling element. In some embodiments, a first heating or cooling element includes a heating element, wherein the heating element includes a resistance heater, and heating or cooling a first heating region includes providing power to the resistance heater. In some embodiments, a second heating or cooling element includes a cooling element, and heating or cooling a second heating region includes allowing a coolant to flow through the cooling element.

[0009] In some embodiments, each of two or more stations includes an upper compartment and a lower compartment, wherein the lower compartment includes a shared intermediate space between one or more other stations.

[0010] Some embodiments described herein relate to a method for regulating the temperature of a four-chamber module (QCM) device. The method includes: providing a substrate to a process chamber, the process chamber including a first station, a second station, a third station, and a fourth station, wherein each station includes a base configured to hold the substrate. The bases of the first station and the third station each include: an independently controlled fan-shaped first heating or cooling element configured to provide independently heated or cooled to a first heating zone on a surface of the base; and an independently controlled fan-shaped second heating or cooling element configured to provide independently heated or cooled to a second heating zone on a surface of the base. The bases of the second station and the fourth station each include a... Heaters; using the heaters of each base to heat the bases of the second station and the fourth station to a first temperature; using a first heating or cooling element to control a temperature of a first heating zone of the first base and the third base; and using a second heating or cooling element to control a temperature of a second heating zone of the first base and the third base, wherein the heat supplied to or removed from the first heating zone of the first base and the third base is different from the heat supplied to or removed from the second heating zone of the first base and the third base, and wherein the temperature of the first heating zone and the temperature of the second heating zone on the surface of the first base and the third base are controlled to provide a substantially uniform second temperature on the surface.

[0011] In some embodiments, the second temperature is less than 150 °C. In some embodiments, the first temperature is greater than 150 °C. In some embodiments, the first heating or cooling element includes a cooling element, and wherein controlling the temperature of one of the first heating zones includes causing a coolant to flow through the cooling element.

[0012] In some embodiments, the method further includes detecting a first temperature, wherein controlling the temperature of one of the first heating zones further includes reducing the temperature of the first heating zone relative to the detected first temperature.

[0013] In some embodiments, the first heating or cooling element includes a heating element, wherein the heating element includes a resistance heater, and wherein controlling the temperature of one of the first heating zones includes providing power to the resistance heater.

[0014] In some embodiments, each station includes an upper chamber and a lower chamber, wherein the lower chamber includes a shared intermediate space between the four stations.

[0015] Some embodiments herein relate to a method for depositing a flowable gap-filling material, the method comprising: (a) placing a substrate on a first base in a first station, the first base including: an independently controlled fan-shaped first heating or cooling element configured to provide independently heated or cooled to a first heating zone on a surface of the first base; and an independently controlled fan-shaped second heating or cooling element configured to provide independently heated or cooled to a second heating zone on a surface of the first base; and (b) depositing a flowable material on the substrate in the first station by a vapor deposition process, wherein during the deposition process, the first base is heated or cooled to a substantially uniform first temperature by: (a) Using a first heating or cooling element to heat or cool a first heating zone; and using a second heating or cooling element to heat or cool a second heating zone, wherein a heat supplied to or removed from the first heating zone is different from a heat supplied to or removed from the second heating zone, and wherein the first heating zone and the second heating zone are heated or cooled to a substantially uniform first temperature; (c) After depositing a flowable material onto a substrate, placing the substrate in a second station; (d) Performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, wherein the second temperature is higher than the substantially uniform first temperature; and repeating (a) to (d) in a cycle until a film of desired thickness is deposited on the substrate.

[0016] In some embodiments, the substantially uniform first temperature is less than about 150 °C. In some embodiments, the second temperature is between about 300 °C and about 1000 °C. In some embodiments, the heat treatment includes a rapid thermal annealing (RTA). In some embodiments, the RTA includes heating the surface of the substrate to the second temperature for less than 10 seconds. In some embodiments, the second temperature is between 800 °C and 1000 °C.

[0017] In some embodiments, the membrane comprises a SiNH or SiCNH membrane. In some embodiments, the membrane fills at least 90% of a gap on the surface of a substrate. In some embodiments, the substrate comprises silicon or germanium. Simple Explanation of the Diagram

[0018] The illustrations provided are for illustrating exemplary embodiments and are not intended to limit the scope of this disclosure. A better understanding of the systems and methods described herein will be achieved by referring to the following description taken in conjunction with the accompanying drawings, wherein: Figure 1A illustrates an example of a familiar dual-station device. Figure 1B illustrates an example of the non-uniformity of the base heater temperature in a conventional dual-station system. Figure 2A illustrates a typical QCM device. Figure 2B illustrates an example of temperature nonuniformity of the base heater in a conventional QCM device. Figure 3A shows a top view of a conventional base with a concentric multi-zone heater. Figure 3B shows a cross-sectional view of a conventional base with a concentric multi-zone heater. Figures 4A to 4C illustrate examples of multi-zone heating / cooling elements with independent temperature control functions according to some embodiments described herein. Figure 5 illustrates an example of a reactor chamber configuration according to some of the embodiments described herein. Figures 6A to 6C illustrate example base surface temperature profiles achievable using the base heating / cooling configurations described herein. Figure 7 illustrates a substrate rotation unit for implementing in-situ multi-station processes according to some embodiments described herein. Implementation

[0019] While certain preferred embodiments and examples are disclosed below, the scope of the invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses and modifications and equivalents thereof. Therefore, the scope of the appended claims is not limited to any of the specific embodiments described below. For example, in any method or process disclosed herein, multiple actions or operations of the method or process may be performed in any suitable sequence and are not necessarily limited to any particular disclosed sequence. Various operations may then be described as multiple discontinuous operations in a manner that may aid in understanding certain embodiments; however, the order of description should not be construed as implying sequential dependence of such operations. Additionally, the structures, systems, and / or apparatuses described herein may be embodied as integrated components or separate components. For the purpose of comparing various embodiments, certain features and advantages of these embodiments are described. No particular embodiment necessarily achieves all such features or advantages. Therefore, various embodiments may be practiced in a manner that achieves or optimizes one or a set of advantages as taught herein, and not necessarily achieve other features or advantages that may also be taught or suggested herein.

[0020] Certain exemplary embodiments will now be described to provide a general understanding of the structure, function, manufacture, and principles of use of the apparatuses and methods disclosed herein. One or more of these embodiments are illustrated in the accompanying drawings. It will be understood by those skilled in the art that the apparatuses and methods specifically described herein and illustrated in the drawings are non-limiting exemplary embodiments, and that the scope of the invention is defined only by the claims. Features illustrated or described along with an exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be included within the scope of this technology.

[0021] This document describes methods and apparatus for providing increased temperature uniformity for a substrate in a semiconductor processing system. Temperature interactions refer to the interactions between two or more heat sources or heat sinks within a semiconductor processing system, which can create undesirable non-uniform temperature profiles on the surface of a substrate during processing. Therefore, the methods and apparatus described herein can improve temperature uniformity by compensating for thermal interactions between high-temperature or low-temperature elements within or adjacent to the reaction chamber. Such methods and apparatus are particularly suitable for multi-station process chambers, including quadruple-chamber-module (QCM) equipment, such as those described in U.S. Patent Application No. 63 / 094,768, filed October 21, 2020, entitled "Methods and Apparatuses for Flowable Gap-Fill," the entire contents of which are incorporated herein by reference.

[0022] Figure 1A illustrates an example of a conventional dual-station reaction chamber. The conventional dual-station reaction chamber may include a processing chamber 102, which is separated from a wafer transport chamber 104 by chamber walls and a gate valve 106. The processing chamber may include two bases 108A and 108B, each base including a heater and configured to hold substrates 110A and 110B. Using the conventional base heating configuration, temperature nonuniformity will be formed on the substrate surface due to the temperature difference between the bases 110A and 110B and the surrounding chamber walls. Specifically, the temperature of the chamber wall on the side of the wafer transport chamber 104 may be lower than the temperature at the surface of the heaters in the processing chamber 102 and the bases 108A and 108B. When the wafer transport chamber 104 is cooled to protect the wafer transfer mechanism therein, the temperature of the base heaters near the chamber walls adjacent to the wafer transport chamber 104 decreases. This temperature drop in a portion of the base heaters causes undesirable temperature nonuniformity. Figure 1B illustrates an example of temperature nonuniformity of the base heater in a conventional dual-station setup. As shown in Figure 1B, the temperature of the base heater is lower near the chamber wall adjacent to the wafer transport chamber 104.

[0023] Figure 2A illustrates an example of a conventional QCM (Quality Controlled Molding) apparatus. In a multi-process QCM apparatus, a configuration can be used in which each base 208A, 208B, 208C, and 208D has an independent heater, allowing processes using different heater temperatures to be performed simultaneously on substrates 210A and 210B within processing chamber 202. In one example configuration, the heaters of bases 208C and 208D can operate at approximately 400 °C, while the heaters of bases 208A and 208B operate at approximately 75 °C. Figure 2B illustrates an example of temperature nonuniformity of the base heaters in a conventional QCM apparatus according to the configuration described above. As illustrated, the heaters of bases 208A and 208B exhibit significant temperature variations due to thermal interaction with the high-temperature base heaters 208C and 208D. This tilted type of temperature nonuniformity cannot be addressed using conventional concentric multi-zone heaters.

[0024] Figure 3A illustrates a top view of a conventional base with an example of concentric multi-zone heaters. As shown, the base 308 includes concentric heaters, comprising an outer concentric heater 302 and an inner concentric heater 304. Each of the concentric heaters provides induction heating to the top surface of the base within a concentric zone. Heaters 302 and 304 are configured to provide uniform heating to their respective heating zones, but cannot provide granular heating to specific portions of their respective zones. For example, heater 302 may not provide a different degree of heating to the upper portion 320 of the base 302 relative to the lower portion 322. Therefore, the heater configuration of Figure 3A cannot compensate for certain temperature nonuniformities on the base surface that exist due to temperature interactions with other structures or heat sources in or adjacent to the processing chamber.

[0025] Figure 3B illustrates a cross-sectional view of a conventional base with concentric multi-zone heaters. As described above with respect to Figure 3A, concentric heaters 302 and 304 may be provided within or above the base 308. Heater 304 may be configured to provide heat to a first inner concentric heating zone on the top surface of the base 308, while heater 302 may be configured to provide heat to a second outer concentric heating zone on the top surface of the base 308. Thus, different degrees of heat can be provided to the inner and outer concentric heating zones. However, different degrees of heating cannot be provided to different portions of the base 308, such as providing different degrees of heating to the upper portion 320 of the base 302 relative to the lower portion 322 of the base 302.

[0026] According to some embodiments herein, the base heater / cooler may include multiple sector-shaped heating and / or cooling zones. In some embodiments, the base heater / cooler may include one or more heating and / or cooling zones, each comprising a complete or partial sector of a circle. For example, each heating and / or cooling zone may comprise a portion of a circle formed by an arc of a circle and its two radii. In some embodiments, the radius may refer to the entire radius of the circular base or a radius smaller than the circle of the circular base, as shown in Figures 4A to 4C. In some embodiments, the arc may include two endpoints, wherein the endpoints encompass a range between approximately 0° and 360°. For example, in some embodiments, the arc may include ranges of approximately 0°, approximately 5°, approximately 10°, approximately 15°, approximately 20°, approximately 25°, approximately 30°, approximately 35°, approximately 40°, approximately 45°, approximately 50°, approximately 55°, approximately 60°, approximately 65°, approximately 70°, approximately 75°, approximately 80°, approximately 85°, approximately 90°, approximately 95°, approximately 100°, approximately 105°, approximately 110°, approximately 115°, approximately 120°, approximately 125°, approximately 130°, approximately 135°, approximately 140°, approximately 145°, approximately 150°, approximately 155°, approximately 160°, approximately 165°, approximately 170°, approximately 175°, approximately 180°, approximately 1... 85°, approximately 190°, approximately 195°, approximately 200°, approximately 205°, approximately 210°, approximately 215°, approximately 220°, approximately 225°, approximately 230°, approximately 235°, approximately 240°, approximately 245°, approximately 250°, approximately 255°, approximately 260°, approximately 265°, approximately 270°, approximately 275°, approximately 280°, approximately 285°, approximately 290°, approximately 295°, approximately 300°, approximately 305°, approximately 310°, approximately 315°, approximately 320°, approximately 325°, approximately 330°, approximately 335°, approximately 340°, approximately 345°, approximately 350°, approximately 355°, approximately 360°, or any value between the foregoing values. Figures 4A to 4C illustrate examples of multi-zone heating / cooling elements with independent temperature control functions. In some embodiments, as illustrated in FIG4A, the base 408 may include dual active cooling lines, comprising an upper portion cooling line 414A and a lower portion cooling line 414B. In some embodiments, as illustrated in FIG4B, the base 408 may include a dual-zone heater, comprising an upper portion heater 416A and a lower portion heater 416B, each of which can be independently controlled to provide different levels of heat to a respective first or second heating zone. In some embodiments, the heaters described herein may include resistance heaters, which can be heated by providing power to the resistance heaters. In other embodiments, the heaters may include other types of heaters known to those skilled in the art of semiconductor processing.In some embodiments, the heat provided by the upper portion heater 416A and the lower portion heater 416B can be controlled to compensate for skewed temperature nonuniformity caused by temperature interactions with other structures or heat sources within or adjacent to the processing chamber. For example, in the dual-base processing chamber configuration shown in Figures 1A and 1B, the lower portion heater 416B can be controlled to provide greater heating to the lower portion of the base than the upper portion heater 416A provides to the upper portion of the base. These different levels of heating compensate for temperature interactions between the base and the processing chamber wall adjacent to the wafer transport chamber 104.

[0027] Figure 4C illustrates an example of a four-zone substrate heater configuration. In some embodiments, compared to the two-zone configuration of Figure 4B, the four-zone heater configuration of Figure 4C provides even more granular substrate heating control. In some embodiments, substrate 408 may include four sector heaters 418A, 418B, 418C, and 418D, each having an associated heating zone in one of the four quadrants of substrate 408. In some embodiments, the heaters / heating zones may comprise semi-circular, partially circular, or circular sectors. In some embodiments, each heater 418A, 418B, 418C, and 418D can be independently controlled to provide varying degrees of heat in a respective first, second, third, or fourth heating zone. These varying degrees of heating compensate for temperature interactions between the substrate and the processing chamber wall adjacent to wafer transport chamber 104.

[0028] In some embodiments, a multi-zone base heater configuration may be utilized. For example, in some embodiments, the multi-zone heater configuration may include 2 heaters, 3 heaters, 4 heaters, 5 heaters, 6 heaters, 7 heaters, 8 heaters, 9 heaters, 10 heaters, 11 heaters, 12 heaters, 13 heaters, 14 heaters, 15 heaters, 16 heaters, 17 heaters, 18 heaters, 19 heaters, 20 heaters, 25 heaters, 30 heaters, 35 heaters, 40 heaters, 45 heaters, 50 heaters, 55 heaters, 60 heaters, 65 heaters, 70 heaters, 75 heaters, 80 heaters, 85 heaters, 90 heaters, 95 heaters, 100 heaters, 200 heaters, 300 heaters, 400 heaters, 500 heaters, or any number of heaters between the aforementioned values.

[0029] Figure 5 illustrates an example of a reactor chamber configuration according to some embodiments described herein. In some embodiments, a cooling system may be implemented, comprising a chiller (e.g., a coolant source) that can flow coolant to active coolers within one or more pedestals. In some embodiments, coolant may flow via coolant lines 502, 504 to two pedestals 208A, 208B of the QCM reactor chamber. Coolant may flow through inner and outer cooling lines within each of pedestals 208A, 208B and return to the chiller via return lines. In some embodiments, each return line may be equipped with a flow meter and a needle valve. In some embodiments, the flow meter, needle valve, and chiller may be in electronic communication with a controller configured to control the heating and cooling systems of the reactor chamber. In some embodiments, the controller may include one or more computer processors and memory having computer-readable instructions for controlling the heating and cooling of pedestals 208A, 208B, 208C, 208D. In some embodiments, one or more temperature sensors that are in electronic communication with the controller may be used.

[0030] One or more of the bases 208A, 208B, 208C, and 208D may include heaters according to the configuration shown in Figure 4B or Figure 4C. The heaters may be configured to have bidirectional active cooling functionality, as shown in Figure 5. In some embodiments, the base heaters of one or more bases 208A, 208B, 208C, and 208D may be controlled to heat the surface of each base to a first temperature, while the base heaters of one or more bases 208A, 208B, 208C, and 208D may be independently controlled to heat one or more other bases 208A, 208B, 208C, and 208D to a second temperature, wherein the first temperature is different from the second temperature. For example, as shown in Figure 5, bases 208A and 208B may be heated to the first temperature (e.g., approximately 75 °C), while bases 208C and 208D may be heated to the second temperature (e.g., approximately 400 °C). In some embodiments, the active cooling systems of substrates 208A and 208B can be operated to bring the substrates to a first temperature. Additionally, as described above with respect to Figures 4B and 4C, the heaters of substrates 208A and 208B can be configured to provide different levels of heat to different heating zones of substrates 208A and 208B to compensate for temperature interactions between substrates 208A and 208B and the processing chamber walls adjacent to the wafer transport chamber. When using heater configurations such as those shown in Figures 4B and 4C, temperature uniformity can be maintained on the surfaces of substrates 208A and 208B, which is desirable for substrate processing.

[0031] Figures 6A to 6C illustrate example base surface temperature profiles achievable using the base heating / cooling configurations described herein. As shown in Figures 6A and 6B, the base temperature profiles can be controlled in any way by tuning the coolant flow rate of the cooling lines within bases 408A and 408B. In the configuration of Figure 6A, the coolant flow is controlled to produce a temperature profile similar to that in a conventional QCM reaction chamber, such as that shown in Figure 2B. In some embodiments, the coolant flow can change dynamically in response to temperature readings within each heating zone. However, as shown in Figure 6B, the temperature profile (i.e., temperature slope) can be controlled such that a reverse trend can be achieved, where the outer edges of bases 408A and 408B, closest to the chamber wall and furthest from adjacent base heaters, are hotter than the inner edges. Preferably, the tuning of the coolant flow rate can be optimized to provide a substantially uniform temperature profile, such as that shown in Figure 6C.

[0032] Therefore, this document describes a reactor chamber configuration in which the base is provided with one or more heaters equipped with fan-shaped, separate temperature control functionality. In some embodiments, the heaters, incorporating an active cooling mechanism, can be configured to compensate for temperature nonuniformity caused by adjacent structures, such as heat sources and radiators. In some embodiments, separate temperature control can be achieved by using multi-zone heating or cooling elements within each base.

[0033] In some embodiments, the temperature control structures and functions described herein can be combined with in-situ (i.e., in a chamber or module) substrate rotation units to implement in-situ multi-station processes, wherein each station is configured to operate at different temperatures, as shown in FIG7. In some embodiments, the temperature control configuration described herein can be used in deposition processes (e.g., deposition / etching, deposition / film curing), such as those described in U.S. Patent Application No. 63 / 094,768, filed October 21, 2020, entitled “METHODS AND APARATUSES FOR FLOWABLE GAP-FILL,” the entire contents of which are incorporated herein by reference. When used in a flowable gap-fill deposition process, the temperature control configuration described herein achieves uniform film thickness by minimizing or eliminating adverse temperature interactions.

[0034] For example, in some embodiments, the temperature control structures and functions described herein can be utilized in a method for flowable gap-filling deposition. In some embodiments, the method may include placing a substrate on a first base in a first station. In some embodiments, the first base may include independently controlled fan-shaped first heating or cooling elements configured to provide independently heated or cooled first heating zones to the surface of the first base. In some embodiments, the first base may further include independently controlled fan-shaped second heating or cooling elements configured to provide independently heated or cooled second heating zones to the surface of the first base.

[0035] In some embodiments, the method may further include depositing a flowable material onto a substrate in a first station via a vapor deposition process. During the vapor deposition process, the first substrate may be heated or cooled to a substantially uniform first temperature by using a first heating or cooling element to heat or cool a first heating region and by using a second heating or cooling element to heat or cool a second heating region. In some embodiments, the heat supplied to or removed from the first heating region is different from the heat supplied to or removed from the second heating region. Furthermore, in some embodiments, the first and second heating regions are heated or cooled to a substantially uniform first temperature.

[0036] In some embodiments, the method may further include: placing the substrate in a second station after depositing a flowable material onto the substrate, and performing heat treatment on the substrate by heating the surface of the substrate to a second temperature in the second station. In some embodiments, the second temperature is higher than a substantially uniform first temperature. In some embodiments, the above steps may be repeated in a cycle until a film of desired thickness is deposited on the substrate.

[0037] In some embodiments, the substantially uniform first temperature is less than about 150 °C. For example, the substantially uniform first temperature may be maintained at about 50 °C, about 55 °C, about 60 °C, about 65 °C, about 70 °C, about 75 °C, about 80 °C, about 85 °C, about 90 °C, about 95 °C, about 100 °C, about 105 °C, about 110 °C, about 115 °C, about 120 °C, about 125 °C, about 130 °C, about 135 °C, about 140 °C, about 145 °C, about 150 °C, or any value between the foregoing values.

[0038] In some embodiments, the second temperature is between about 300 °C and about 1000 °C. For example, wafers can be heated to temperatures ranging from approximately 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 360°C, 370°C, 380°C, 390°C, 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, 480°C, 490°C, 500°C, 510°C, 520°C, 530°C, 540°C, 550°C, 560°C, 570°C, 580°C, 590°C, 600°C, 610°C, 620°C, and 630°C. ℃, approximately 640 ℃, approximately 650 ℃, approximately 660 ℃, approximately 670 ℃, approximately 680 ℃, approximately 690 ℃, approximately 700 ℃, approximately 710 ℃, approximately 720 ℃, approximately 730 ℃, approximately 740 ℃, approximately 750 ℃, approximately 760 ℃, approximately 770 ℃, approximately 780 ℃, approximately 790 ℃, approximately 800 ℃, approximately 810 ℃, approximately 820 ℃, approximately 830 ℃, approximately 840 ℃, approximately 850 ℃, approximately 860 ℃, approximately 870 ℃, approximately 880 ℃, approximately 890 ℃, approximately 900 ℃, approximately 910 ℃, approximately 920 ℃, approximately 930 ℃, approximately 940 ℃, approximately 950 ℃, approximately 960 ℃, approximately 970 ℃, approximately 980 ℃ ℃, approximately 990 ℃, approximately 1000 ℃, or any value between the aforementioned values.

[0039] In some embodiments, the heat treatment includes rapid thermal annealing (RTA). In some embodiments, RTA includes heating the surface of the substrate to a second temperature for less than 10 seconds. During RTA, the second temperature is between 800 °C and 1000 °C.

[0040] In some embodiments, the film formed using the method described above may comprise a SiNH or SiCNH film. In some embodiments, the formed film may comprise α-CH, SiCN, SiN, SiON, SiCO, SiCOH, SiCNH, SiCH, SiNH, or SiCON. In some embodiments, the film fills at least 90% of a gap on the surface of the substrate. In some embodiments, the substrate comprises silicon or germanium.

[0041] Furthermore, in some embodiments, the temperature control structures and functions described herein can be utilized in methods for regulating the temperature of a four-chamber module (QCM) device. In some embodiments, the method may include providing a substrate to a process chamber comprising a first station, a second station, a third station, and a fourth station, wherein each station includes a base configured to hold the substrate. In some embodiments, the stations may be configured in a square shape, with each station located at one corner of the square, as shown in FIG2A. In some embodiments, the bases of the first station and the third station may be diagonally positioned relative to each other, each including an independently controlled fan-shaped first heating or cooling element configured to provide independently heated or cooled first heating zone to a surface of the base. In some embodiments, the bases of the first station and the third station may also include independently controlled fan-shaped second heating or cooling elements configured to provide independently heated or cooled second heating zone to a surface of the base.

[0042] In some embodiments, the bases of the second station and the fourth station each include a heater. The method may further include heating the bases of the second station and the fourth station to a first temperature using the heaters of each base. A first heating or cooling element may be used to control the temperature of the first heating zone of the first and third bases. A second heating or cooling element may be used to control the temperature of the second heating zone of the first and third bases. In some embodiments, the heat supplied to or removed from the first heating zone of the first and third bases is different from the heat supplied to or removed from the second heating zone of the first and third bases. However, in some embodiments, the temperatures of the first and second heating zones on the surfaces of the first and third bases are controlled to provide a substantially uniform second temperature on the surfaces.

[0043] In some embodiments, the second temperature is less than 150 °C. In some embodiments, the first temperature is greater than 150 °C. In some embodiments, the first heating or cooling element includes a cooling element, and wherein controlling the temperature of one of the first heating zones includes causing a coolant to flow through the cooling element.

[0044] In some embodiments, the method may further include detecting a first temperature, wherein controlling the temperature of the first heating zone further includes reducing the temperature of the first heating zone relative to the detected first temperature. In some embodiments, the first heating or cooling element includes a heating element, wherein the heating element includes a resistance heater, and wherein controlling the temperature of the first heating zone includes providing power to the resistance heater. In some embodiments, each station includes an upper chamber and a lower chamber, wherein the lower chamber includes a common intermediate space between the four stations.

[0045] In the foregoing description, the present invention has been described with reference to several specific embodiments. However, it will be apparent that various modifications and changes can be made thereto without departing from the broader spirit and scope of the invention. Accordingly, this specification and figures are intended to be illustrative rather than limiting.

[0046] In fact, although the invention has been disclosed in the context of certain embodiments and examples, those skilled in the art will understand that the invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses of the invention, as well as obvious modifications and equivalents. Furthermore, although several variations of the embodiments of the invention have been shown and described in detail, those skilled in the art will readily understand other modifications within the scope of the invention based on this disclosure. It is also contemplated that various combinations or sub-combinations of the specific features and styles of the embodiments can be made, and still fall within the scope of the invention. It should be understood that the various features and styles of the disclosed embodiments can be combined or substituted with each other to form variations of the disclosed embodiments of the invention. No method disclosed herein needs to be performed in the listed order. Therefore, it is intended that the scope of the invention disclosed herein should not be limited to the specific embodiments described above.

[0047] It will be understood that the various systems and methods disclosed herein each possess several innovative forms, and no single one is solely responsible for or necessary for the desired properties disclosed herein. The various features and processes described above can be used independently of each other or combined in various ways. All feasible combinations and sub-combinations are intended to fall within the scope of this disclosure.

[0048] Certain features described in this specification in the context of multiple separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented separately or in any suitable sub-combination in multiple embodiments. Furthermore, while features may be described above as acting in certain combinations or even initially claimed so, in some cases, one or more features from the claimed combination may be removed from the combination, and the claimed combination may refer to a sub-combination or a variation of a sub-combination. For each and every embodiment, no single feature or set of features is necessary or indispensable.

[0049] Unless otherwise specifically stated, or otherwise understood in the context used, it should be understood that the conditional language used herein (such as "can," "could," "might," or "may," "e.g.," and the like) is generally intended to convey that certain embodiments include certain features, elements, and / or steps that are not included in other embodiments. Therefore, such conditional language is not generally intended to imply that a feature, element, and / or step is necessary in any way for one or more embodiments, or that one or more embodiments necessarily include logic for determining whether such features, elements, and / or steps are included or performed in any particular embodiment, with or without author input or prompting. The terms "comprising," "including," "having," and the like are synonyms and used inclusively in an open-ended manner, and do not exclude additional elements, features, actions, operations, and the like. Furthermore, the term "or" is used in an inclusive (not exclusionary) sense, such that when used, for example, to connect elements in a list, "or" means one, some, or all of the elements in the list. Furthermore, unless otherwise specified, the use of "a (a, an)" and "" in this application and the claims following this document shall be interpreted as meaning "one or more" or "at least one". Similarly, although operations may be depicted in a particular order in the illustrations, it should be understood that such operations do not need to be performed in the particular order shown or in a sequential order, or that not all illustrated operations need to be performed to achieve the desired result. Further, the illustrations may take the form of flowcharts to schematically depict one or more instance processes. However, other operations not depicted may be incorporated into the schematically illustrated instance methods and processes. For example, one or more additional operations may be performed before, after, simultaneously with, or between any of the illustrated operations. Additionally, in other embodiments, multiple operations may be reconfigured or reordered. In some contexts, multiplexing and parallel processing may be beneficial. Furthermore, the separation of various system components in the embodiments described above should not be construed as requiring such separation in all embodiments, but rather it should be understood that the described program components and systems may be substantially integrated into a single software product or packaged into multiple software products. Additionally, other embodiments fall within the scope of the following claims. In some cases, the actions listed in the claims can be performed in a different order and still achieve the desired result.

[0050] Furthermore, while the methods and apparatus described herein are readily subject to various modifications and alternative forms, specific examples of which have been illustrated and described in detail herein, it should be understood that the invention is not limited to the specific forms or methods disclosed, but rather is intended to encompass all modifications, equivalents, and substitutions falling within the spirit and scope of the various embodiments described and the claims following this document. Furthermore, any particular feature, manner, method, property, characteristic, quality, attribute, element, or similar disclosed herein, along with any particular feature, manner, method, property, characteristic, quality, attribute, element, or similarity of the same embodiment or example, may be applicable to all other embodiments or examples presented herein. No method disclosed herein needs to be performed in the order listed. Methods disclosed herein may include certain actions taken by a person skilled in the art; however, methods may also include any third-party instructions, whether express or implied, regarding such actions. The scope disclosed herein also covers any and all overlapping subscopes and combinations thereof. Languages ​​such as “up to,” “at least,” “greater than,” “less than,” “between,” and the like include the listed numbers. Numbers preceded by terms such as "about" or "approximately" include the listed figures and should be interpreted based on context (e.g., reasonably feasible accuracy in various contexts, such as ±5%, ±10%, ±15%, etc.). For example, "about 3.5 mm" includes "3.5 mm". Phrases preceded by terms such as "substantially" include the listed phrases and should be interpreted based on context (e.g., the degree reasonably feasible in various contexts). For example, "substantially constant" includes "constant". Unless otherwise stated, all measurements are taken under standard conditions, including temperature and pressure.

[0051] As used herein, the phrase "at least one of" an item in a list means any combination of those items, including multiple single members. As an example, "at least one of: A, B, or C" is intended to encompass: A; B; C; A and B; A and C; B and C; and A, B, and C. Unless otherwise specifically stated, connective language such as the phrase "at least one of X, Y, and Z" is otherwise understood, in the context in which it is used, to generally convey that an item, term, etc., may be at least one of X, Y, or Z. Therefore, such connective language is generally not intended to imply that certain embodiments require at least one X, at least one Y, and at least one Z to be present. The headings (if any) provided herein are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

[0052] Accordingly, the scope of the patent application is not intended to be limited to the embodiments shown herein, but rather to the broadest range consistent with the disclosure, principles and novel features revealed herein.

[0053] 102: Processing Room 104: Wafer Handling Room 106: Gate valve 108A, 108B: Base 110A, 110B: Substrate 202: Processing Room 208A, 208B, 208C, 208D: Base 210A, 210B: Substrate 308: Base 302: Heater 304: Heater 322: Lower part 320: Upper part 408: Base 414A: Cooling pipes 414B: Cooling pipes 416A: Heater 416B: Heater 418A, 418B, 418C, 418D: Sector-shaped heaters 502, 504: Coolant lines

Claims

1. A semiconductor processing apparatus comprising: a process chamber including a chamber wall adjacent to a wafer transport chamber and two or more stations; a first base within a first station, the first base including: an independently controlled, fan-shaped first heating or cooling element configured to provide independently heated or cooled to a first heating zone on a surface of the first base; and an independently controlled, fan-shaped second heating or cooling element configured to provide independently heated or cooled to a second heating zone on the surface of the first base; a second base within a second station, the second base including a heater; and a controller including a processor and memory, providing instructions to: use the first heating or cooling element to heat or cool the first heating zone; The second heating or cooling element is used to heat or cool the second heating zone, wherein the heat supplied to or removed from the first heating zone is different from the heat supplied to or removed from the second heating zone, the difference between the heat supplied to or removed from the first heating zone and the heat supplied to or removed from the second heating zone is configured to compensate for the temperature interaction between the first base and the chamber wall adjacent to the wafer transport chamber, and wherein the first heating zone and the second heating zone on the surface of the first base are heated or cooled to a substantially uniform first temperature; and the heater is used to heat the second base to a second temperature, wherein the second temperature is higher than the first temperature.

2. The device of claim 1, wherein the first base further comprises: an independently controlled fan-shaped third heating or cooling element configured to provide independently heated or cooled to a third heating zone on the surface of the first base; and an independently controlled fan-shaped fourth heating or cooling element configured to provide independently heated or cooled to a fourth heating zone on the surface of the first base.

3. The device of claim 2, wherein the controller provides further instructions to the device to control the device to: heat or cool the third heating zone of the first base using the third heating or cooling element; and heat or cool the fourth heating zone of the first base using the fourth heating or cooling element.

4. The device of claim 3, wherein the heat supplied to or removed from the third heating zone is different from the heat supplied to or removed from the first heating zone, the second heating zone, and the fourth heating zone.

5. The device of claim 4, wherein the first heating zone, the second heating zone, the third heating zone, and the fourth heating zone are heated or cooled to a substantially uniform first temperature.

6. The device of claim 3, wherein the heat supplied to or removed from the fourth heating zone is different from the heat supplied to or removed from the first heating zone, the second heating zone, and the third heating zone.

7. The device of claim 1, wherein the first temperature is less than 150 °C.

8. The device as requested in item 1, wherein the second temperature is greater than 150 °C.

9. The apparatus of claim 1, wherein the first heating or cooling element includes a cooling element, and wherein heating or cooling the first heating zone includes causing a coolant to flow through the cooling element.

10. The apparatus of claim 1, wherein the first heating or cooling element comprises a heating element, wherein the heating element comprises a resistance heater, and wherein heating or cooling the first heating zone comprises providing power to the resistance heater.

11. The apparatus of claim 1, wherein the second heating or cooling element includes a cooling element, and wherein heating or cooling the second heating zone includes allowing a coolant to flow through the cooling element.

12. The equipment of claim 1, wherein each of the two or more stations includes an upper compartment and a lower compartment, wherein the lower compartment includes a common intermediate space between the two or more stations.

13. A method for regulating the temperature of a four-chamber module (QCM) device, the method comprising: providing a substrate to a process chamber, the process chamber including a chamber wall adjacent to a wafer transport chamber, a first station, a second station, a third station, and a fourth station, wherein each station includes a base configured to hold the substrate, wherein the base of the first station and the base of the third station each include: an independently controlled fan-shaped first heating or cooling element configured to provide independently heated or cooled to a first heating zone on a surface of the base; and an independently controlled fan-shaped second heating or cooling element configured to provide independently heated or cooled to a second heating zone on the surface of the base, wherein the base of the second station and the base of the fourth station each include a heater; heating the base of the second station and the base of the fourth station to a first temperature using the heater of each base; The first heating or cooling element is used to control the temperature of the first heating zone of the first base and the third base; and the second heating or cooling element is used to control the temperature of the second heating zone of the first base and the third base. The heat supplied to or removed from the first heating zone of the first base and the third base is different from the heat supplied to or removed from the second heating zone of the first base and the third base, and the difference between the heat supplied to or removed from the first heating zone of the first base and the third base and the heat supplied to or removed from the second heating zone of the first base and the third base is configured to compensate for the temperature interaction between the first base and the chamber wall adjacent to the wafer transport chamber, and the temperature of the first heating zone and the temperature of the second heating zone on the surface of the first base and the third base are controlled to provide a substantially uniform second temperature on the surface.

14. The method of claim 13, wherein the second temperature is less than 150 °C.

15. The method of claim 13, wherein the first temperature is greater than 150 °C.

16. The method of claim 13, wherein the first heating or cooling element includes a cooling element, and wherein controlling the temperature of one of the first heating zones includes causing a coolant to flow through the cooling element.

17. The method of claim 16, further comprising detecting the first temperature, wherein controlling the temperature of one of the first heating zones further comprises reducing the temperature of the first heating zone relative to the detected first temperature.

18. The method of claim 13, wherein the first heating or cooling element includes a heating element, wherein the heating element includes a resistance heater, and wherein controlling a temperature of the first heating zone includes providing power to the resistance heater.

19. The method of claim 13, wherein each station comprises an upper chamber and a lower chamber, wherein the lower chamber comprises a shared intermediate space between the four stations.

20. A method for depositing a flowable gap-filling material, the method comprising: (a) placing a substrate on a first pedestal in a first station of a process chamber, the process chamber including a chamber wall adjacent to a wafer transport chamber, the first pedestal including: a first heating or cooling element of an independently controlled fan shape configured to provide a first heating region to a surface of the first pedestal independently heated or cooled; and a second heating or cooling element of an independently controlled fan shape configured to provide a second heating region to the surface of the first pedestal independently heated or cooled; (b) depositing a flowable material on the substrate in the first station by a vapor deposition process, wherein during deposition, the first pedestal is heated or cooled to a substantially uniform first temperature by the following steps: The first heating or cooling element is used to heat or cool the first heating zone; and the second heating or cooling element is used to heat or cool the second heating zone, wherein the heat supplied to or removed from the first heating zone is different from the heat supplied to or removed from the second heating zone, the difference between the heat supplied to or removed from the first heating zone and the heat supplied to or removed from the second heating zone is configured to compensate for the temperature interaction between the first base and the chamber wall adjacent to the wafer transport chamber, and wherein the first heating zone and the second heating zone are heated or cooled to the substantially uniform first temperature; (c) after the flowable material is deposited on the substrate, the substrate is placed in the second station; (d) a heat treatment is performed on the substrate by heating a surface of the substrate to a second temperature in the second station, wherein the second temperature is higher than the substantially uniform first temperature; and (a) to (d) are repeated in a cycle until a film of desired thickness is deposited on the substrate.

21. The method of claim 20, wherein the substantially uniform first temperature is less than about 150 °C.

22. The method of claim 20, wherein the second temperature is between about 300 °C and about 1000 °C.

23. The method of claim 20, wherein the heat treatment comprises a rapid heat annealing.

24. The method of claim 23, wherein the rapid thermal annealing comprises heating the surface of the substrate to the second temperature for less than 10 seconds.

25. The method of claim 24, wherein the second temperature is between 800 °C and 1000 °C.

26. The method of claim 20, wherein the membrane comprises a SiNH or SiCNH membrane.

27. The method of claim 20, wherein the film fills at least 90% of a gap on the surface of the substrate.

28. The method of claim 20, wherein the substrate comprises silicon or germanium.

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