Methods for manufacturing curable resin films, composite films, semiconductor wafers, and semiconductor wafers

Abstract

The curable resin film of the present invention is a curable resin film used to form a curable resin film on the bump forming surface of a semiconductor wafer having a bump forming surface. According to JIS K 7244-4:1999, under the test conditions of a temperature of -50~300°C, a heating rate of 10°C / min, a frequency of 11Hz, and a tensile test mode, the tanδ of the curable resin film after curing is measured to be 0.43 or higher.

Description

Methods for manufacturing curable resin films, composite films, semiconductor wafers, and semiconductor wafers This invention relates to a curable resin film, a composite film, a semiconductor wafer, and a method for manufacturing a semiconductor wafer. More specifically, this invention relates to a curable resin film, a composite film having the curable resin film, a semiconductor wafer having the curable resin film as a protective film, and a method for manufacturing a semiconductor wafer. In recent years, semiconductor devices have been manufactured using a mounting method known as flip-chip. In flip-chip technology, a semiconductor wafer with bumps on its circuit surface is laminated to a substrate with the circuit surface of the semiconductor wafer facing each other, thus mounting the semiconductor wafer onto the substrate. Furthermore, the semiconductor wafer is typically obtained by monolithically mounting a semiconductor wafer with bumps on its circuit surface. In a bumped semiconductor wafer, a protective film is sometimes provided to protect the junction between the bump and the semiconductor wafer (hereinafter also referred to as the "bump neck"). For example, in Patent Documents 1 and 2, a laminate formed by sequentially stacking a support substrate, an adhesive layer, and a thermosetting resin layer is pressed and adhered to the bump-forming surface of the bumped semiconductor wafer, with the thermosetting resin layer as the bonding surface. The thermosetting resin layer is then heated to harden it, thereby forming a protective film. In the methods described in Patent Documents 1 and 2, after the protective film is formed on the bumped wafer, the bumped wafer and the protective film are cut together to obtain a monolithic semiconductor wafer. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Publication No. 2015-092594 [Patent Document 2] Japanese Patent Application Publication No. 2012-169484 [The problem that the invention aims to solve] However, the significant warpage of bumped wafers hinders the wafer's adhesion process, leading to reduced process efficiency and decreased productivity. Furthermore, with the recent trend towards thinner semiconductor wafers, even previously permissible warpage of bumped wafers can now cause connectivity issues and other malfunctions. Therefore, given the increasing prevalence of warpage, stricter requirements are needed to minimize it. Therefore, the present invention has been made in view of the above-mentioned problems. The object of the present invention is to provide a curable resin film for forming a protective film on the bump-forming surface of a semiconductor wafer having bumps, thereby reducing the warpage of the bump-bumped wafer; a composite film having the curable resin film; a semiconductor wafer; and a method for manufacturing the semiconductor wafer. [Means for solving the problems] In order to solve the above-mentioned problems, the inventors carefully examined the problem and found that by using a hardened resin film with a tanδ value above a certain value after hardening to form a protective film for semiconductor wafers, the above-mentioned problems can be solved, and thus the present invention was completed. That is, the present invention relates to the following inventions. [1] A curable resin film, which is used to form a curable resin film on the bump forming surface of a semiconductor wafer having a bump forming surface, according to JIS K 7244-4:1999, under the test conditions of a temperature of -50~300°C, a heating rate of 10°C / min, a frequency of 11Hz, and a test mode of stretching, the tanδ of the curable resin film after curing is 0.43 or more. [2] The curable resin film of [1] above, wherein the tanδ of the curable resin film after curing is 0.50 or more. [3] The curable resin film of [1] or [2] above, wherein the elastic modulus E' of the curable resin film after curing is 20MPa or less at 130°C. [4] A curable resin film as described in any one of [1] to [3] above, wherein the curable resin film contains liquid epoxy resin, and the content of the liquid epoxy resin in the curable resin film is 30 to 45% by mass. [5] A curable resin film as described in [4] above, wherein the curable resin film contains liquid epoxy resin, and the content of the liquid epoxy resin in the curable resin film is 41 to 45% by mass. [6] A curable resin film as described in any one of [1] to [5] above, wherein the aforementioned bump forming surface and side surface of the aforementioned semiconductor wafer are both used to form the aforementioned curable resin film. [7] A composite sheet having a laminated structure obtained by laminating a curable resin film as described in any one of [1] to [6] above with a release sheet. [8] A composite sheet as described in [7] above, wherein the aforementioned release sheet has a substrate and a release layer, and the release layer faces the aforementioned curable resin film. [9] As described in [8] above, a composite sheet is further provided between the aforementioned substrate and the aforementioned release layer.

[10] As described in [8] or [9] above, wherein the aforementioned release layer is a layer formed from a composition comprising an ethylene-vinyl acetate copolymer.

[11] A method for manufacturing a semiconductor wafer, comprising the following steps (V1) to (V4) in sequence: Step (V1): preparing a semiconductor wafer having a bump forming surface with bumps Step (V2): pressing and adhering a curable resin film as described in [1] or [2] above onto the aforementioned bump forming surface of the aforementioned semiconductor wafer, and covering the aforementioned bump forming surface of the aforementioned semiconductor wafer with the aforementioned curable resin film Step (V3): curing the aforementioned curable resin film to obtain a semiconductor wafer with a curable resin film Step (V4): monolithizing the aforementioned semiconductor wafer with a curable resin film to obtain a semiconductor wafer whose bump forming surface is covered by the aforementioned curable resin film.

[12] A method for manufacturing a semiconductor wafer, comprising the following steps (S1) to (S4) in sequence: Step (S1): preparing a semiconductor wafer fabrication wafer, wherein the semiconductor wafer fabrication wafer is formed on the bump forming surface of the semiconductor wafer having bumps, with a groove as a predetermined dividing line formed thereon without reaching the back side; Step (S2): pressing and adhering the curable resin film as described above [6] to the bump forming surface of the semiconductor wafer fabrication wafer, and embedding the curable resin film in the groove formed on the semiconductor wafer fabrication wafer by covering the bump forming surface of the semiconductor wafer fabrication wafer with the curable resin film; Step (S3): curing the curable resin film to obtain a semiconductor wafer fabrication wafer with a curable resin film attached. Step (S4): Along the aforementioned predetermined dividing line, the aforementioned semiconductor wafer with the hardened resin film is monolithically processed to obtain a semiconductor wafer whose bump formation surface and side surface are covered by the aforementioned hardened resin film; Further, after the aforementioned step (S2) and before the aforementioned step (S3), after the aforementioned step (S3) and before the aforementioned step (S4), or in the aforementioned step (S4), the following step (S-BG) is included: Step (S-BG): The aforementioned back side of the semiconductor wafer is ground.

[13] The semiconductor wafer manufacturing method of

[11] above further includes the following step (TA): Step (TA): The back protective film is formed on the aforementioned back side of the semiconductor wafer.

[14] The semiconductor wafer manufacturing method of

[12] above further includes the following step (TB): Step (TB): The back protective layer is formed on the aforementioned back side of the semiconductor wafer.

[15] A semiconductor wafer having a bump-forming surface having a bump-forming surface having a hardened resin film formed by hardening a hardened resin film as described in any one of [1] to [6] above.

[16] A semiconductor wafer having a bump-forming surface having a bump-forming surface having a bump-forming surface having a hardened resin film formed by hardening a hardened resin film as described in [6] above.

[17] The semiconductor wafer as described in

[15] or

[16] above, wherein a back protective film is further provided on the back side of the semiconductor wafer. [Effects of the Invention]. According to the present invention, a curable resin film for forming a protective film on the bump forming surface of a semiconductor wafer having a bump forming surface is provided, which can reduce the warpage of the bumped wafer, a composite film having the curable resin film, a semiconductor wafer, and a method for manufacturing the semiconductor wafer are provided. [Forms of Invention Implementation] In this specification, "active ingredient" refers to the component contained in the composition to which the product is made, excluding diluents such as water and organic solvents. Also, in this specification, "(meth)acrylic acid" refers to both "acrylic acid" and "methacrylic acid," and other similar terms are used in the same way. Furthermore, in this specification, the weight-average molecular weight and number-average molecular weight are converted values ​​of polystyrene determined by gel permeation chromatography (GPC). Furthermore, in this specification, the lower and upper limits of preferred numerical ranges (e.g., content ranges) can be independently combined. For example, the description "preferably 10~90, more preferably 30~60" can be combined with "preferably lower limit (10)" and "more preferably upper limit (60)," and can be set to "10~60." Furthermore, in this specification, "the content of each component in the total amount of the effective ingredients of the curing resin composition" is synonymous with "the content of each component in the curing resin film formed by the curing resin composition". [Curing Resin Film] The curable resin film of this embodiment is used to form a curable resin film on the bump formation surface of a semiconductor wafer having a bump formation surface. According to JIS K 7244-4:1999, under the conditions of a temperature of -50 to 300°C, a heating rate of 10°C / min, a frequency of 11 Hz, and a stretching measurement mode, the tanδ of the cured curable resin film is measured to be 0.43 or higher. When the tanδ of the cured resin film is less than 0.43, the warpage of the wafer with bumps, which forms the curable resin film as a protective film, increases, hindering the adsorption operation of the semiconductor wafer, reducing process efficiency, decreasing productivity, or causing poor bonding. Therefore, the tanδ is preferably 0.50 or higher, more preferably 0.60 or higher, even more preferably 0.65 or higher, even more preferably 0.70 or higher, and even more preferably 0.75 or higher. Furthermore, the upper limit of the aforementioned tanδ is not particularly limited and may be 1.00 or less, or 0.95 or less. The aforementioned tanδ is the ratio (G'' / G') of the storage shear modulus (G') which contributes to elasticity and the loss shear modulus (G'') which contributes to viscosity. It can be adjusted by adjusting any or both of the types and amounts of components contained in the curing resin that forms the curing resin film. Furthermore, the aforementioned tanδ can be measured using the method described in the examples. The elastic modulus E' of the curable resin film in this embodiment after curing at 130°C is not particularly limited, but from the viewpoint of wafer adhesion, it is preferably 20 MPa or less, more preferably 16 MPa or less, even more preferably 12 MPa or less, and even more preferably 10 MPa or less. Furthermore, the lower limit of the above-mentioned elastic modulus E' at 130°C is not particularly limited, and can be 3 MPa or more, or 5 MPa or more. The above-mentioned elastic modulus E' at 130°C can be adjusted by adjusting any one or both of the types and amounts of components contained in the curable resin forming the curable resin film. Furthermore, the above-mentioned elastic modulus E' at 130°C can be measured by the method described in the examples. <Preferred Application of the Curable Resin Film of this Embodiment> The curable resin film of this embodiment is used to form a curable resin film as a protective film on the bump formation surface of a semiconductor wafer having a bump formation surface with bumps. From the viewpoint of improving the strength of the semiconductor wafer and reducing the warpage of the bump-attached wafer, the curable resin film of this embodiment is preferably used to form a curable resin film as a protective film on both the bump formation surface and the side surface of the semiconductor wafer having a bump formation surface with bumps. From this viewpoint, it is preferable to satisfy the following requirement (I). <<Requirement (I)>> Under conditions of 90°C and 1Hz, a test piece (uncured) of the aforementioned curable resin film with a diameter of 25mm and a thickness of 1mm is subjected to strain. The storage modulus of elasticity of the test piece is measured. The storage modulus of elasticity of the test piece when the strain is 1% is taken as Gc1, and the storage modulus of elasticity of the test piece when the strain is 300% is taken as Gc300. The value of X calculated by the following formula (i) is 10 or more but less than 10,000. X=Gc1 / Gc300････(i) Regarding the viewpoint of forming a protective film with excellent coating properties, the upper limit of the X value specified in requirement (I) above is preferably 5,000 or less, more preferably 2,000 or less, even more preferably 1,000 or less, even more preferably 500 or less, even more preferably 300 or less, even more preferably 100 or less, and even more preferably 70 or less. Furthermore, regarding the viewpoint of providing better embedding properties of the trenches in wafers used for semiconductor wafer fabrication, the lower limit of the X value specified in requirement (I) above is preferably 10 or more, more preferably 20 or more, and even more preferably 30 or more. In the curable resin film of this embodiment, Gc1 has an X value of 10 or more as specified in requirement (I) above, and is not particularly limited if it is less than 10,000. However, from the viewpoint that it is easier to form a protective film with excellent coating properties, Gc1 is preferably 1×10. 2 ~1×10 6 Pa, preferably 2×10 3 ~7×10 5 Pa, and even better is 3×10 3 ~5×10 5 Pa. In the curable resin film of this embodiment, there is no particular limitation on the X value of Gc300, which is 10 or higher but less than 10,000. However, from the viewpoint that the curable resin film has good embedding properties to the bump base and good embedding properties to the trench of the wafer used for semiconductor wafer fabrication after the bump penetrates through the curable resin film, Gc300 is preferably 10 to 15,000 Pa, more preferably 20 to 10,000 Pa, and even more preferably 30 to 5,000 Pa. The thickness of the curable resin film in this embodiment is preferably 30 μm or more, more preferably 40 μm or more, and even more preferably 45 μm or more, from the viewpoint of good filling performance of the trenches in the semiconductor wafer fabrication wafer. Furthermore, the thickness of the curable resin film is preferably 250 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less, from the viewpoint of suppressing contamination caused by seepage during bonding. However, the above-mentioned thickness can be appropriately adjusted according to the changes in the depth or width of the trenches in the semiconductor wafer fabrication wafer and the volume of resin to be filled. Here, the curable resin film can be a single layer (monolayer) or multiple layers (two or more). When the curable resin film is multiple layers, these multiple layers can be the same or different from each other, and the combination of these multiple layers is not particularly limited. "Thickness of the curable resin film" refers to the total thickness of the curable resin film. For example, the thickness of a curable resin film composed of multiple layers refers to the total thickness of all the layers that make up the curable resin film. The curable resin film of this embodiment is formed by curing through heating or irradiation with an energy line. The aforementioned curable resin film can be a thermosetting resin film that cures by heating, or an energy-curable resin film that cures by irradiation with an energy line; however, from the viewpoint of operability, a thermosetting resin film is preferred. Hereinafter, the structure of the curable resin film of this embodiment will be described in detail, taking into account the aforementioned tanδ, the aforementioned elastic modulus E', and the conditions satisfying the aforementioned requirement (I). <Thermosetting Resin Film> The thermosetting resin film of this embodiment is cured by heating to form a cured resin film. The thermosetting resin film of this embodiment contains a polymer component (A) and a thermosetting component (B). The thermosetting resin film of this embodiment is, for example, formed from a thermosetting resin composition containing polymer component (A) and thermosetting component (B). Polymer component (A) is considered to be a component formed by the polymerization reaction of a polymeric compound. Furthermore, thermosetting component (B) is a component that uses heat as a trigger for a curing (polymerization) reaction. Moreover, this curing (polymerization) reaction also includes a polycondensation reaction. <<Polymer Component (A)>> The thermosetting resin film and thermosetting resin composition contain polymer component (A). Polymer component (A) is a polymer compound that imparts film-forming properties or flexibility to the thermosetting resin film. Polymer component (A) can be used alone or in combination of two or more. When using two or more polymer components (A) in combination, their combination and ratio can be arbitrarily selected. Polymer component (A) may include, for example, acrylic resins, polyaromatic ester resins, polyvinyl acetal, polyesters, urethane resins (resins having urethane bonds), acrylamide urethane resins, polysiloxane resins (resins having silicate bonds), rubber resins (resins having a rubber structure), phenoxy resins, and thermosetting polyimides. Among these, acrylic resins, polyaromatic ester resins, and polyvinyl acetal are preferred, more preferably polyaromatic ester resins and polyvinyl acetal, and even more preferably polyvinyl acetal. Acrylic resins, including known acrylic polymers, are used. The weight-average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, and even more preferably 500,000 to 1,000,000. When the weight-average molecular weight of the acrylic resin is above the lower limit mentioned above, the shape stability (time stability during storage) of the thermosetting resin film is easily improved. Furthermore, when the weight-average molecular weight of the acrylic resin is below the upper limit mentioned above, the thermosetting resin film easily tracks the uneven surface of the substrate; for example, the formation of voids is easily suppressed between the substrate and the thermosetting resin film. Therefore, the coverage of the bump formation surface of the semiconductor wafer becomes better, and the embedding of trenches is also improved. Therefore, the above requirement (I) can be easily satisfied. From the viewpoint of the adhesion and operability of the curable resin film, the glass transition temperature (Tg) of acrylic resin is preferably -60~70℃, more preferably -40~50℃, and even more preferably -30℃~30℃. Acrylic resins may include, for example, polymers of one or more (meth)acrylates; copolymers of two or more monomers selected from (meth)acrylic acid, edaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxymethylacrylamide. Examples of (meth)acrylates constituting acrylic resins include, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, and so on. Alkyl acrylates comprising isononyl acrylate, decyl acrylate, undecyl acrylate, dodecyl acrylate (lauryl acrylate), tridecyl acrylate, tetradecyl acrylate (myristyl acrylate), pentadecyl acrylate, hexadecyl acrylate (palmitoyl acrylate), heptadecanyl acrylate, and octadecyl acrylate (stearyl acrylate) are alkyl acrylates in which the alkyl group has a chain structure with 1 to 18 carbon atoms. (Meth)acrylate cycloalkyl esters such as isoborneol (meth)acrylate and dicyclopentyl (meth)acrylate; (meth)acrylate arylalkyl esters such as benzyl (meth)acrylate; (meth)acrylate cycloalkylene (meth)acrylate such as dicyclopentenyl (meth)acrylate; (meth)acrylate cycloalkylene (meth)acrylate such as dicyclopentenyloxyethyl (meth)acrylate; (meth)acrylate imine; (meth)acrylate containing glycidyl groups such as glycidyl (meth)acrylate; (meth)acrylate containing hydroxyl groups such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; (meth)acrylate containing substituted amino groups such as N-methylaminoethyl (meth)acrylate. In this specification, "substituted amino group" refers to a group in which one or two hydrogen atoms of an amino group are replaced by a group other than hydrogen atoms. Among these, from the viewpoint of the film-forming properties of the curable resin film and the adhesion of the curable resin film to the protective film forming surface of the semiconductor wafer, the alkyl group constituting the alkyl ester is preferably a copolymer of (meth)acrylate with a chain structure having 1 to 18 carbon atoms, (meth)acrylate containing glycidyl groups, and (meth)acrylate containing hydroxyl groups; the alkyl group constituting the alkyl ester is more preferably a copolymer of (meth)acrylate with a chain structure having 1 to 4 carbon atoms, (meth)acrylate containing glycidyl groups, and (meth)acrylate containing hydroxyl groups; and even more preferably a copolymer of butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate. Acrylic resins, for example, besides (meth)acrylates, may also be copolymerized from one or more monomers selected from (meth)acrylic acid, edaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxymethylacrylamide. The monomers constituting acrylic resins can be a single type or two or more types. When there are two or more monomers constituting acrylic resins, their combination and ratio can be arbitrarily chosen. The polyaromatic ester resin in polymer component (A) can be of known types, such as resins based on the polycondensation of bisphenol A with dicarboxylic acid, carboxylic acid, or other dicarboxylic acids. Preferably, it is a polycondensation of bisphenol A and phthalic acid, or a copolymer of poly(4,4'-isopropylidene diphenyl terephthalate / isophthalate), or derivatives thereof. The polyvinyl acetal in polymer component (A) can be exemplified by known types. Among them, preferred polyvinyl acetals include, for example, polyvinyl formaldehyde and polyvinyl butyral, and more preferably polyvinyl butyral. Polyvinyl butyral can be exemplified by having constituent units represented by the following formulas (i)-1, (i)-2 and (i)-3. (In the formula, l, m, and n are each an integer greater than or equal to 1.) The weight-average molecular weight (Mw) of polyvinyl acetal is preferably 5,000 to 200,000, more preferably 8,000 to 100,000. When the weight-average molecular weight of polyvinyl acetal is above the lower limit mentioned above, the shape stability (time-dependent stability during storage) of the thermosetting resin film is easily improved. Furthermore, when the weight-average molecular weight of polyvinyl acetal is below the upper limit mentioned above, the thermosetting resin film easily tracks the uneven surfaces of the adherend; for example, the formation of voids is easily suppressed between the adherend and the thermosetting resin film. Therefore, the coverage of the bump formation surface of the semiconductor wafer becomes better, and the embedding of trenches is also easily improved. Therefore, the above requirement (I) can be easily satisfied. The glass transition temperature (Tg) of polyvinyl acetal is preferably 40~80°C, and more preferably 50~70°C, from the viewpoint of film-forming properties of the thermosetting resin film and the protrusion of the bump tip. Here, in this specification, "protrusion of the bump tip" refers to the property of the bump penetrating the thermosetting resin film when the thermosetting resin film for forming the protective film is adhered to the bumped wafer; it is also called the penetration property of the bump tip. The ratio of the three or more monomers constituting polyvinyl acetal can be arbitrarily selected. The content of polymer component (A) is based on the total amount of effective components of the thermosetting resin composition, preferably 2 to 30% by mass, more preferably 3 to 25% by mass, and even more preferably 3 to 15% by mass. In some cases, the polymer component (A) is equivalent to the thermosetting component (B). In this embodiment, the thermosetting resin composition contains components equivalent to both the polymer component (A) and the thermosetting component (B), and the thermosetting resin composition is considered to contain both the polymer component (A) and the thermosetting component (B). <<Thermosetting Component (B)>> Thermosetting resin films and thermosetting resin compositions contain thermosetting component (B). Thermosetting component (B) is a component used to harden the thermosetting resin film, forming a rigid, cured resin film. Thermosetting component (B) can be used alone or in combination of two or more. When there are two or more thermosetting components (B), their combination and ratio can be arbitrarily selected. The thermosetting component (B) can be exemplified by, for example, epoxy thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and polysiloxanes. Among these, epoxy thermosetting resins are preferred. When the thermosetting component (B) is an epoxy thermosetting resin, it improves the protective properties of the cured resin film and the protrusion of the bump head tops, and also inhibits the warping of the cured resin film. Epoxy thermosetting resins are composed of epoxy resin (B1) and thermosetting agent (B2). Epoxy thermosetting resins can be used alone or in combination of two or more types. When two or more epoxy thermosetting resins are used, their combination and ratio can be arbitrarily selected. (Epoxy Resin (B1)) Epoxy Resin (B1) is not particularly limited. From the viewpoint of more easily achieving the effects of the present invention, it is preferable to use a combination of a solid epoxy resin at room temperature (hereinafter also referred to as solid epoxy resin) and a liquid epoxy resin at room temperature (hereinafter also referred to as liquid epoxy resin). Furthermore, in this specification, "room temperature" refers to 5~35°C, preferably 15~25°C, and more preferably 23°C. Liquid epoxy resins, as long as they are liquid at room temperature, are not particularly limited. Examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenolic varnish type epoxy resin, glycidyl ester type epoxy resin, biphenyl type epoxy resin, and phenyl skeleton type epoxy resin. Among these, bisphenol A type epoxy resin is preferred. A single liquid epoxy resin can be used alone, or a combination of two or more can be used. When two or more liquid epoxy resins are used, their combination and ratio can be arbitrarily selected. The epoxy equivalent of the liquid epoxy resin is preferably 200~600 g / eq, more preferably 250~550 g / eq, and even more preferably 300~500 g / eq. Furthermore, the epoxy equivalent in this embodiment can be determined according to JIS K 7236:2009. The content of liquid epoxy resin in the curable resin film is preferably 30-45% by mass, more preferably 41-45% by mass, and even more preferably 41-43% by mass. There are no particular restrictions on the type of solid epoxy resin, as long as it is solid at room temperature. Examples include biphenyl-type epoxy resin, bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, o-cresolaldehyde epoxy resin, dicyclopentadiene-type epoxy resin, naphthalene-type epoxy resin, anthracene-type epoxy resin, and fumed silica-based epoxy resin. Among these, naphthalene-type epoxy resin and fumed silica-based epoxy resin are preferred, and naphthalene-type epoxy resin is even more preferred. A single solid epoxy resin can be used alone, or two or more can be used in combination. When two or more solid epoxy resins are used, their combination and ratio can be arbitrarily selected. The epoxy equivalent of the solid epoxy resin is preferably 150~450 g / eq, more preferably 150~400 g / eq. The ratio of the content of liquid epoxy resin (x) to the content of solid epoxy resin (y) [(x) / (y)], by mass ratio, is preferably 0.2 to 10.0, more preferably 0.3 to 8.0, even more preferably 0.4 to 6.0, and still more preferably 0.5 to 5.0. When the above ratio [(x) / (y)] is within the above range, the tensile strength at break of the curable resin film at 70°C after curing can be easily adjusted to below the above value. The number-average molecular weight of epoxy resin (B1) is not particularly limited, but from the viewpoint of the curability of thermosetting resin films and the strength and heat resistance of the cured resin films, it is preferably 300~30,000, more preferably 400~10,000, and even more preferably 500~3,000. (Thermosetting Agent (B2)) Thermosetting agent (B2) functions as a curing agent for epoxy resin (B1). Examples of thermosetting agents (B2) include compounds having two or more functional groups in one molecule that can react with epoxy groups. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and anhydride-modified acid groups, preferably phenolic hydroxyl groups, amino groups, or anhydride-modified acid groups, and more preferably phenolic hydroxyl groups or amino groups. Among the thermosetting agents (B2), examples of phenolic curing agents having phenolic hydroxyl groups include polyfunctional phenolic resins, biphenol, phenolic varnish-type phenolic resins, dicyclopentadiene phenolic resins, and arylalkylphenol resins. Among the thermosetting agents (B2), examples of amine curing agents having amino groups include dicyandiamine (hereinafter also simply referred to as "DICY"). From the viewpoint that the effects of the present invention are more easily achieved among these, phenolic curing agents having phenolic hydroxyl groups are preferred, and phenolic varnish-type phenolic resins are even more preferred. In the thermosetting agent (B2), the number average molecular weight of resin components such as polyfunctional phenolic resins, phenolic varnish-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000. The molecular weight of non-resin components in the thermosetting agent (B2), such as bisphenol and dicyandiamide, is not particularly limited, but is preferably 60 to 500. Thermosetting agent (B2) can be used alone or in combination with two or more other agents. When there are two or more thermosetting agents (B2), their combination and ratio can be chosen arbitrarily. In the thermosetting resin composition, the content of the thermosetting agent (B2) is preferably 1 to 200 parts by weight, more preferably 5 to 150 parts by weight, and even more preferably 10 to 100 parts by weight, and even more preferably 15 to 77 parts by weight, relative to 100 parts by weight of the epoxy resin (B1). When the content of the thermosetting agent (B2) is above the lower limit mentioned above, the curing of the thermosetting resin film becomes easier. Furthermore, when the content of the thermosetting agent (B2) is below the upper limit mentioned above, the moisture absorption rate of the thermosetting resin film decreases, and the reliability of the encapsulation obtained using the thermosetting resin film is further improved. In the thermosetting resin composition, the content of the thermosetting component (B) (the total content of epoxy resin (B1) and thermosetting agent (B2)) is preferably 200 to 3000 parts by mass, more preferably 300 to 2000 parts by mass, and even more preferably 400 to 1000 parts by mass, and still more preferably 500 to 800 parts by mass, relative to 100 parts by mass of the polymer component (A). <<Curing Accelerator (C)>> Thermosetting resin films and thermosetting resin compositions may contain a curing accelerator (C). The curing accelerator (C) is a component used to adjust the curing speed of the thermosetting resin composition. Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organophosphorus compounds (phosphorus compounds in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Among these, the viewpoint that makes it easier to achieve the effects of the present invention is preferably an imidazole, and more preferably 2-phenyl-4,5-dihydroxymethylimidazolium. Hardening promoter (C), may be used 1 alone or in combination with more than 2 types. When the hardening promoter (C) is 2 or more, the combination and ratio of them may be arbitrarily selected. In the thermohardening resin composition, the content of hardening promoter (C) when using hardening promoter (C) is 0.01~10 parts by mass, preferably 0.01~10 parts by mass, and more preferably 0.1~5 parts by mass relative to the content of the thermohardening component (B). The content of hardening promoter (C) is above the above lower limit value, and it is more significantly easier to obtain the effect obtained by using hardening promoter (C). Also, the content of hardening promoter (C) is below the above upper limit value, for example, the high polarity hardening promoter (C) inhibits the segregation of thermohardening resin thin films from moving to the next interface side with the adherent under high temperature and high humidity conditions, which further improves the reliability of the encapsulation obtained using thermohardening resin thin films. << Filling material (D)>> Thermohardening resin film and thermohardening resin composition, which may also contain filling material (D). By containing filler (D), the thermal expansion coefficient of the hardened resin film obtained by hardening the thermohardening resin film can be easily adjusted to an appropriate range, further improving the reliability of the package obtained using the thermohardening resin film. Furthermore, thermohardening resin films can reduce the moisture absorption rate of hardened resin films or improve heat dissipation by containing a filler (D). The filling material (D) may be either organic and inorganic filling material, but preferably an inorganic filling material. Preferable inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, iron oxide red, silicon carbide, boron nitride, etc.; Among these, the inorganic filler, preferably silica or alumina. Filling material (D) may be used alone or in combination of 2 or more. When the filling material (D) is 2 or more, their combinations and ratios may be arbitrarily selected. The content of the filler (D) when using the filler (D), in terms of inhibiting the peeling of the wafer of hardened resin film due to thermal expansion and heat shrinkage, is based on the total amount of the active components of the thermohardening resin composition, preferably 5~50 mass%, preferably 7~40 mass%, and more preferably 10~30 mass%. The average particle size of the filler (D) is preferably 5nm~1000nm, more preferably 5nm~500nm, and more preferably 10nm~300nm. The above mean particle size is determined by determining the outer diameter in 1 particle at multiple places and obtaining its average value. <<Energy-curing resin (E)>> Thermosetting resin films and thermosetting resin compositions may also contain energy-curing resin (E). Thermosetting resin films containing energy-curing resin (E) can have their properties altered by irradiation with energy rays. Energy line curable resin (E) is obtained by polymerizing (curing) an energy line curable compound. Energy line curable compounds include, for example, compounds having at least one polymerizable double bond within the molecule, preferably acrylate compounds having a (meth)acrylic group. Acrylic ester compounds include, for example, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, etc., which contain a chain-like aliphatic backbone; dicyclopentyl di(meth)acrylate, etc., which contain a cyclic aliphatic backbone; polyalkylene glycol (meth)acrylates, such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylates; carbamate (meth)acrylate oligomers; epoxy-modified (meth)acrylates; polyether (meth)acrylates other than the above-mentioned polyalkylene glycol (meth)acrylates; and isoconic acid oligomers, etc. The weight-average molecular weight of the energy line hardening compound is preferably 100 to 30,000, more preferably 300 to 10,000. The energy line hardening compound used in polymerization can be used alone or in combination of two or more. When two or more energy line hardening compounds are used in polymerization, their combination and ratio can be arbitrarily selected. When using energy line curing resin (E), the content of energy line curing resin (E) is based on the total amount of the effective components of the thermosetting resin composition, preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and even more preferably 10 to 85% by mass. <<Photopolymerization Initiator (F)>> When thermosetting resin films and thermosetting resin compositions contain energy line curing resin (E), in order to carry out the polymerization reaction of energy line curing resin (E) more efficiently, thermosetting resin films and thermosetting resin compositions may also contain photopolymerization initiator (F). Photopolymerization initiators (F) include, for example, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexylphenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, diphenyl ethylene glycol, bibenzyl, biacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyl diphenylphosphine oxide, and 2-chloroanthraquinone, etc. Photopolymerization initiator (F) can be used alone or in combination of two or more. When there are two or more photopolymerization initiators (F), their combination and ratio can be arbitrarily selected. In the thermosetting resin composition, the content of photopolymerization initiator (F) is 0.1 to 20 parts by mass relative to the content of energy line curing resin (E) per 100 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 2 to 5 parts by mass. <<Additives (G)>> Thermosetting resin films and thermosetting resin compositions may also contain additives (G) without impairing the effects of the present invention. Additives (G) are known and can be selected arbitrarily according to the purpose, without particular limitation. Preferred additives (G) include, for example, coupling agents; crosslinking agents; surfactants; plasticizers; antistatic agents; antioxidants; leveling agents such as silicone oil; and getters, etc. Additive (G) can be used alone or in combination of two or more. When there are two or more additives (G), their combination and ratio can be chosen arbitrarily. There is no particular limitation on the content of additive (G), and it can be selected appropriately according to the purpose. <<Solvent>> Thermosetting resin compositions preferably further contain a solvent. Thermosetting resin compositions containing a solvent improve workability. The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylprop-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds with amide bonds) such as dimethylformamide and N-methylpyrrolidone. A single solvent can be used, or two or more solvents can be used in combination. When two or more solvents are used, their combination and ratio can be arbitrarily chosen. From the viewpoint that the solvent can more uniformly mix the components contained in the thermosetting resin composition, methyl ethyl ketone is preferred. <Preparation Method of Thermosetting Resin Composition> The thermosetting resin composition is prepared by blending the various components used to constitute this composition. There is no particular limitation on the order of addition of the components during preparation; two or more components may be added simultaneously. When using a solvent, the solvent is mixed with any other component besides the solvent. This component may be pre-diluted before use, or the other component may be used without pre-diluting, and the solvent is mixed with this component. There is no particular limitation on the method of mixing the components during preparation; any conventional method such as using a stir bar or stirring blade for mixing, using a mixer, or applying ultrasonic mixing may be suitable. The temperature and time for adding and mixing the components are not particularly limited, as long as the components do not deteriorate; they may be adjusted appropriately. The preferred temperature is 15~30℃. [Composite Sheet] The curable resin film of this embodiment can be a composite sheet having a laminated structure in which the curable resin film and the release sheet are stacked. By forming the composite sheet, the curable resin film is stably supported and protected during the handling of the curable resin film in the packaging of a product or during the manufacturing process of a semiconductor wafer. FIG1 is a schematic cross-sectional view showing the structure of a composite sheet in one embodiment, and FIG2 is a schematic cross-sectional view showing the structure of a composite sheet in another embodiment. The composite sheet 10 of FIG1 has a release sheet 1 and a curable resin film 2 disposed on the release sheet 1. The release sheet 1 has a substrate 3 and a release layer 4, which is disposed facing the curable resin film 2. The composite sheet 20 of FIG2 has a release sheet 11 and a curable resin film 12 disposed on the release sheet 11. The release sheet 11 may have an intermediate layer 15 disposed between the substrate 13 and the release layer 14. Furthermore, the laminated body consisting of substrate 13, intermediate layer 15, and release layer 14 in this sequential order is suitable for use as a back-side grinding sheet. The following describes each layer of the release sheet used in the composite sheet constituting this embodiment. <Substrate> The substrate is in sheet or film form, and its constituent materials include, for example, various resins listed below. Resins constituting the substrate include, for example, polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene-based copolymers (copolymers obtained using ethylene as a monomer) such as ethylene-vinyl acetate copolymers, ethylene-(meth)acrylate copolymers, ethylene-(meth)acrylate copolymers, and ethylene-norbornene copolymers; and vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymers. Resins (resins obtained using vinyl chloride as a monomer); polystyrene; polycyclic olefins; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polyethylene terephthalate, polyethylene isophthalate, polyethylene 2,6-naphthalenedicarboxylate, and fully aromatic polyesters whose constituent units all have aromatic cyclic groups; copolymers of two or more of the above polyesters; poly(meth)acrylates; polyurethane; polyurethane acrylates; polyimide; polyamide; polycarbonate; fluoropolymers; polyacetals; modified polyphenylene ether; polyphenylene sulfide; polyurethane; polyetherketone, etc. Furthermore, the resin constituting the base material may also include polymer alloys such as mixtures of the above polyesters and other resins. Preferably, in polymer alloys of the above polyesters and other resins, the amount of the resin other than the polyester is relatively small. Furthermore, the resin constituting the substrate may include, for example, a cross-linked resin formed by cross-linking one or more of the resins exemplified herein; or a modified resin such as an ionomer formed by using one or more of the resins exemplified herein. The resin constituting the substrate may be used alone or in combination of two or more resins. When there are two or more resins constituting the substrate, their combination and ratio can be arbitrarily selected. The substrate can be a single layer or multiple layers (two or more). When the substrate is multiple layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. The thickness of the substrate is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, even more preferably 15 μm to 300 μm, and even more preferably 20 μm to 150 μm. Here, "the thickness of the substrate" refers to the total thickness of the substrate. For example, the thickness of a substrate composed of multiple layers refers to the total thickness of all the layers constituting the substrate. The substrate is preferably one with high thickness accuracy, that is, one that can suppress thickness unevenness in any part. Among the above-mentioned constituent materials, materials with high thickness accuracy that can be used to form the substrate include, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, polybutylene terephthalate, ethylene-vinyl acetate copolymer, etc. In addition to the main constituent materials such as resins mentioned above, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers). The substrate can be transparent or opaque, and can be colored according to the purpose, or other layers can be deposited by vapor deposition. The substrate can be manufactured by known methods. For example, a resin-containing substrate can be manufactured by molding a resin composition containing the aforementioned resin. <Release Layer> The release layer has the function of imparting peelability to the release sheet. The release layer is, for example, formed from a hardened composition of a release layer forming agent containing a release agent. The release agent is not particularly limited, and examples include polysiloxane resin, alkyd resin, acrylic resin, and ethylene-vinyl acetate copolymer. Among these, from the viewpoint of improving the protrusion of the bump head tip and the peelability from the hardened resin film, ethylene-vinyl acetate copolymer is preferred. The release layer can be a single layer or multiple layers, including two or more. When the release layer is multiple layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. From the viewpoint of peelability and operability, the thickness of the release layer is preferably 3 to 50 μm, and more preferably 5 to 30 μm. Here, "thickness of the release layer" refers to the total thickness of the release layer. For example, the thickness of a release layer composed of multiple layers refers to the total thickness of all the layers constituting the release layer. <Intermediate Layer> The intermediate layer can be in the form of a sheet or film, and its constituent materials can be selected appropriately according to the purpose, without particular limitation. For example, when the purpose is to suppress the deformation of the hardened resin film due to the bump shape on the protective film covering the semiconductor surface, the preferred constituent materials for the intermediate layer, in terms of high conformability to unevenness and improved adhesion of the intermediate layer, include urethane (meth)acrylates; resins containing monomer components such as olefin monomers from α-olefins; etc. The intermediate layer can be a single layer or multiple layers, including two or more. When there are multiple intermediate layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. The thickness of the intermediate layer can be appropriately adjusted according to the height of the bumps on the semiconductor surface to be protected, but for the point where the influence of higher bumps can be easily absorbed, it is preferably 50μm to 600μm, more preferably 70μm to 500μm, and even more preferably 80μm to 400μm. Here, "thickness of the intermediate layer" refers to the total thickness of the intermediate layer. For example, the thickness of an intermediate layer composed of multiple layers refers to the total thickness of all the layers constituting the intermediate layer. <Manufacturing Method of Composite Sheets> Composite sheets can be manufactured by sequentially stacking the aforementioned layers in a corresponding positional relationship. For example, when manufacturing composite sheets, when depositing a release layer or intermediate layer on a substrate, a release layer forming composition or an intermediate layer forming composition can be applied to the substrate, and then dried or irradiated with energy lines as needed to deposit the release layer or intermediate layer. Examples of coating methods include spin coating, spray coating, bar coating, knife coating, roller coating, roller-knife coating, blade coating, die coating, and gravure coating. Alternatively, for example, when a thermosetting resin film is further deposited on a release layer after it has been deposited on a substrate, the thermosetting resin composition can be coated onto the release layer to directly form a thermosetting resin film. Similarly, when a release layer is further deposited on an intermediate layer after it has been deposited on a substrate, a release layer forming composition can be coated onto the intermediate layer to directly form a release layer. Thus, when forming a continuous two-layer laminate using any composition, a new layer can be formed by further coating the composition onto the layer formed by the aforementioned composition. However, for the latter of these two layers, it is preferable to pre-form the aforementioned composition onto another release film, and then adhere the exposed surface of the layer whose contact side with the release film is the opposite side to the exposed surface of the remaining layer that has already been formed, thereby forming a continuous two-layer laminate. In this case, it is preferable to coat the release treatment surface of the release film. The release film can be removed as needed after forming the laminate. [Manufacturing Method of First Semiconductor Wafer] The manufacturing method of the first semiconductor wafer in this embodiment uses the above-described method for manufacturing a semiconductor wafer with a curable resin film. This method forms a curable resin film as a protective film on both the bump forming surface and the side surface of a semiconductor wafer having a bump forming surface. The manufacturing method of the first semiconductor wafer generally includes: a step of preparing a wafer for semiconductor wafer fabrication (S1), a step of attaching a curable resin film (S2), a step of curing the curable resin film (S3), and a step of monolithization (S4), and further includes a step of backside grinding of the wafer for semiconductor wafer fabrication (S-BG). In detail, the semiconductor wafer manufacturing method of the first embodiment includes the following steps (S1) to (S4) in sequence. Step (S1): A step of preparing a semiconductor wafer for fabrication, wherein the semiconductor wafer for fabrication is attached to the bump forming surface of the semiconductor wafer having bumps, and grooves as dicing lines are formed on the bump forming surface of the semiconductor wafer without reaching the back side; Step (S2): A step of pressing and adhering the aforementioned curable resin film to the bump forming surface of the semiconductor wafer for fabrication, and covering the bump forming surface of the semiconductor wafer for fabrication with the aforementioned curable resin film, while embedding the aforementioned curable resin film into the grooves formed on the semiconductor wafer for fabrication; Step (S3): A step of curing the aforementioned curable resin film to obtain a semiconductor wafer for fabrication with a curable resin film attached; Step (S4): A step of monolithizing the aforementioned semiconductor wafer for fabrication with a curable resin film along the aforementioned dicing lines to obtain a semiconductor wafer with at least the aforementioned bump forming surface and side surface covered by the aforementioned curable resin film. Furthermore, after step (S2) and before step (S3), after step (S3) and before step (S4), or in step (S4), the following step (S-BG) is included: step (S-BG) of grinding the back side of the semiconductor wafer. In the manufacturing method of the first semiconductor wafer of this embodiment, both the bump formation surface and the side surface are protected by a hardened resin film coating, which reduces the warpage of the bump-attached wafer. Furthermore, the term "coating" here refers to forming a hardened resin film along the shape of the semiconductor wafer on at least the bump formation surface and the side surface of a semiconductor wafer. That is, this invention is explicitly different from sealing techniques that encapsulate multiple semiconductor wafers in resin. The following describes in detail each step of the manufacturing method of the first semiconductor wafer according to this embodiment. In the following description, "semiconductor wafer" may also be referred to simply as "wafer" or "semiconductor wafer". Furthermore, in the following description, the curable resin film (the curable resin film of this embodiment) used to form a curable resin film on both the bump formation surface and the side surface of the semiconductor wafer is also referred to as "curable resin film (X1)". The curable resin film formed by curing the "curable resin film (X1)" is also referred to as "curable resin film (r1)". Additionally, the curable resin film used to form a curable resin film as a protective film on the side opposite to the bump formation surface of the semiconductor wafer (back surface) is also referred to as "back surface curable resin film (X2)". The curable resin film formed by curing the "back surface curable resin film (X2)" is also referred to as "back surface curable resin film (r2)". Furthermore, a composite sheet used to form a curable resin film (r1) as a protective film on both the bump formation surface and the side surface of a semiconductor wafer is also called a "first composite sheet (α1)". The "first composite sheet (α1)" has a laminated structure in which a "first release sheet (Y1)" and a "curable resin film (X1)" are stacked. Also, a composite sheet used to form a back-side curable resin film (r2) as a protective film on the back side of a semiconductor wafer is also called a "second composite sheet (α2)". The "second composite sheet (α2)" has a laminated structure in which a "second release sheet (Y2)" and a "back-side curable resin film (X2)" are stacked. <Step (S1)> Regarding one example of the semiconductor wafer prepared in step (S1), a schematic cross-sectional view is shown in FIG3. In step (S1), a semiconductor wafer 30 for manufacturing semiconductor wafers is prepared on the bump forming surface 21a of a semiconductor wafer 21 having bumps 22, on which grooves 23 as dicing predetermined lines are formed in a manner that does not reach the back surface 21b. The shape of the bump 22 is not particularly limited; it can be any shape as long as it can contact and be fixed to the electrodes on the substrate for wafer mounting. For example, in Figure 3, the bump 22 is set as a sphere, but the bump 22 can also be a spheroid. This spheroid can be, for example, a spheroid that extends vertically relative to the bump forming surface 21a of the wafer 21, or a spheroid that extends horizontally relative to the bump forming surface 21a of the wafer 21. Furthermore, the bump 22 can also be cylindrical. The height of the bump 22 is not particularly limited and can be appropriately changed according to design requirements. For example, it is 30μm to 300μm, preferably 60μm to 250μm, and even more preferably 80μm to 200μm. In addition, the "height of bump 22" refers to the height of the part existing from the highest position of the bump forming surface 21a when focusing on a single bump. There is no particular limit to the number of bumps 22, which can be changed appropriately according to design requirements. Wafer 21, for example, is a semiconductor wafer on which circuits such as wiring, capacitors, diodes and transistors are formed on the surface. The material of the wafer is not particularly limited, and examples include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers and sapphire wafers. There is no particular limitation on the size of wafer 21, but from the viewpoint of improving batch processing efficiency, it is generally 8 inches (diameter 200mm) or larger, and preferably 12 inches (diameter 300mm) or larger. Furthermore, the shape of wafer 21 is not limited to circular; it can also be square or rectangular. For square wafers, from the viewpoint of improving batch processing efficiency, the size of wafer 21 is preferably such that the length of its longest side is at least the aforementioned size (diameter). The thickness of wafer 21 is not particularly limited, but from the viewpoint of easily suppressing the shrinkage and warping that accompanies the curing of the curable resin film (X1), in subsequent steps, the grinding amount of the back side 21b of wafer 21 is suppressed, and the time required for back side grinding is shortened. It is preferred to be 100μm to 1,000μm, more preferably 200μm to 900μm, and even more preferably 300μm to 800μm. In the bump formation surface 21a of the semiconductor wafer 30 prepared in step (S1), a plurality of trenches 23 are formed in a grid pattern as predetermined dividing lines for monolithicizing the semiconductor wafer 30. The plurality of trenches 23 are slits formed using a dicing-before-grinding method, and are formed at a depth shallower than the thickness of the wafer 21, so that the deepest part of the trenches 23 does not reach the back surface 21b of the wafer 21. The plurality of trenches 23 can be formed by cutting using conventionally known wafer dicing apparatus equipped with dicing blades. Furthermore, the plurality of trenches 23 can be formed as long as the manufactured semiconductor wafer achieves the desired size and shape. The size of the semiconductor wafer is typically around 0.5mm × 0.5mm to 1.0mm × 1.0mm, but is not limited to this size. The width of the groove 23 is preferably 10 μm to 2,000 μm, more preferably 30 μm to 1,000 μm, even more preferably 40 μm to 500 μm, and even more preferably 50 μm to 300 μm, so that the hardening resin film (X1) can be well embedded. The depth of the trench 23 can be adjusted according to the thickness of the wafer used and the required wafer thickness, preferably 30μm~700μm, more preferably 60μm~600μm, and even more preferably 100μm~500μm. The semiconductor wafer 30 prepared in step (S1) is supplied to step (S2). <Step (S2)> A summary of step (S2) is shown in Figure 4. In step (S2), a curable resin film (X1) is pressed and adhered to the bump formation surface 21a of the semiconductor wafer 30. Here, from a processability point of view, the aforementioned curable resin film (X1) is used as a first composite sheet (α1) having a laminated structure of a first release sheet (Y1) and a curable resin film (X1). When using the aforementioned first composite sheet (α1), the curable resin film (X1) of the first composite sheet (α1) is used as the adhesion surface and pressed and adhered to the bump formation surface 21a of the semiconductor wafer 30. In step (S2), as shown in FIG4, the bump forming surface 21a of the semiconductor wafer 30 is covered with a curable resin film (X1), and at the same time, the curable resin film (X1) is embedded in the trench 23 formed on the semiconductor wafer 30. The pressure applied when bonding the curable resin film (X1) to the semiconductor wafer 30 is preferably 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, and even more preferably 10 kPa to 100 kPa, based on the viewpoint of ensuring good embedding of the curable resin film (X1) into the trench 23. Furthermore, the pressure applied when bonding the curable resin film (X1) to the semiconductor wafer 30 can be appropriately varied from the initial to the final stage of bonding. For example, from the viewpoint of improving the embedding of the curable resin film (X1) into the trench 23, it is preferable to lower the pressure at the initial stage of bonding and gradually increase the pressure. Furthermore, when the curable resin film (X1) is adhered to the semiconductor wafer 30, if the first curable resin film (X1) is a thermosetting resin film, heating is preferable from the viewpoint that the curable resin film (X1) provides better embedding of the trench 23. Specifically, the heating temperature (adhesion temperature) is preferably 50°C to 150°C, more preferably 60°C to 130°C, and even more preferably 70°C to 110°C. Also, this heat treatment of the curable resin film (X1) is not included in the curing treatment of the curable resin film (X1). Furthermore, when attaching the curable resin film (X1) to the semiconductor wafer 30, it is preferable to perform the process under reduced pressure. This creates a negative pressure in the trench 23, making it easier for the curable resin film (X1) to spread throughout the entire trench 23. As a result, the embedding performance of the curable resin film (X1) into the trench 23 becomes better. The specific pressure of the reduced pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, and even more preferably 0.05 kPa to 1 kPa. <Step (S3)> A summary of step (S3) is shown in Figure 5. In step (S3), the curable resin film (X1) is cured to obtain a semiconductor wafer 30 with a cured resin film (r1). The cured resin film (r1) formed by curing the cured resin film (X1) is more robust than the cured resin film (X1) at room temperature. Therefore, by forming the cured resin film (r1), the bump neck can be well protected. The curing of the curable resin film (X1) can be carried out by either heat curing or curing by energy beam irradiation, depending on the type of curing component contained in the curable resin film (X1). Furthermore, in this specification, "energy beam" refers to electromagnetic waves or charged particle beams containing energy quanta; examples include ultraviolet light and electron beams, with ultraviolet light being preferred. For heat curing, the preferred curing temperature is 90°C to 200°C, and the preferred curing time is 1 hour to 3 hours. For curing by energy beam irradiation, the conditions can be appropriately set according to the type of energy beam used. For example, when using ultraviolet light, the preferred irradiance is 170 mW / cm². 2 ~250mw / cm 2 The optimal light intensity is 300 mJ / cm². 2 ~3,000 mJ / cm 2 In the process of curing the curable resin film (X1) to form the curable resin film (r1), in step (S2), from the viewpoint that air bubbles and the like that enter when the curable resin film (X1) is embedded in the groove 23 can be removed, the curable resin film (X1) is preferably a thermosetting resin film. <Step (S4)> A summary of step (S4) is shown in Figure 6. In step (S4), the portion of the hardened resin film (r1) on the semiconductor wafer 30 with the hardened resin film (r1) attached is cut along a predetermined dicing line. The cutting is performed using a blade. This yields a semiconductor wafer 40 with at least the bump-forming surface 21a and its sides covered by a hardened resin film (r1). Since the semiconductor wafer 40 has its bump-forming surface 21a and its sides covered by the hardened resin film (r1), it possesses excellent strength. Furthermore, the bump-forming surface 21a and its sides are not cut into the hardened resin film (r1) and are continuously covered; therefore, the interface between the bump-forming surface 21a and the hardened resin film (r1) is where the sides of the semiconductor wafer 40 are not exposed. The exposed portion on the side of the semiconductor wafer 40 at the interface between the bump-forming surface 21a and the hardened resin film (r1) is prone to becoming the starting point for film peeling. In the semiconductor wafer 40 of the present invention, this exposed portion does not exist; therefore, film peeling from this exposed portion is less likely to occur during or after the process of cutting the semiconductor wafer fabrication wafer 30 and manufacturing the semiconductor wafer 40. Therefore, a semiconductor wafer 40 in which the peeling of the hardened resin film (r1) as a protective film is suppressed can be obtained. Furthermore, in step (S4), when the portion of the hardened resin film (r1) on the semiconductor wafer 30 with the hardened resin film (r1) attached is cut along the predetermined dicing line, it is preferable that the hardened resin film (r1) is transparent. Since the hardened resin film (r1) is transparent, the semiconductor wafer 21 is transparent and visible, thus ensuring the distinguishability of the predetermined dicing line. Therefore, it is easy to cut along the predetermined dicing line. <Step (S-BG)> A summary of step (S-BG) is shown in Figure 7. In step (S-BG), as shown in Figure 7(1-a), firstly, with the first composite sheet (α1) attached, the back surface 21b of the semiconductor wafer 30 is ground. In Figure 7, "BG" refers to back surface grinding. Next, as shown in Figure 7(1-b), the first release sheet (Y1) is peeled off from the first composite sheet (α1). The grinding amount when grinding the back surface 21b of the semiconductor wafer 30 is only the amount that exposes at least the bottom of the trench 23 of the semiconductor wafer 30. Alternatively, grinding can be performed further, or the hardened resin film (X1) or hardened resin film (r1) embedded in the trench 23 can be ground together with the semiconductor wafer 30. Furthermore, in this embodiment, the above-mentioned step (S-BG) can be performed after the above-mentioned step (S2) and before the above-mentioned step (S3), or the above-mentioned step (S-BG) can be performed after the above-mentioned step (S3) and before the above-mentioned step (S4), or it can be performed in the above-mentioned step (S4). <Step (TB)> In one embodiment of the method for manufacturing a first semiconductor wafer, it is preferred to further include the following step (TB): Step (TB): forming a back protective layer on the back side of the semiconductor wafer. When the manufacturing method of the above embodiment is used, a semiconductor wafer 40 can be obtained by coating at least the bump formation surface 21a and the side surface with a hardened resin film (r1). However, the back side of the semiconductor wafer 40 is exposed. Therefore, from the viewpoint of protecting the back side of the semiconductor wafer 40 and improving the strength of the semiconductor wafer 40, it is preferable to perform the above-described step (TB). More specifically, the above steps (TB) preferably include the following steps (TB1) and (TB2) in sequence. • Step (TB1): The step of attaching the back-side hardened resin film (X2) to the back side of the semiconductor wafer. • Step (TB2): The step of hardening the back-side hardened resin film (X2) to form a back-side hardened resin film (r2). Step (TB1) is performed after step (S-BG). Step (TB2) is performed before step (S4). Thus, in step (S4), the semiconductor wafer with the hardened resin film attached and protected by the back-side hardened resin film (r2) is monolithized, the bump formation surface and side surfaces are protected by the hardened resin film (r1), and a semiconductor wafer with the back side protected by the back-side hardened resin film (r2) is obtained. Furthermore, in step (TB1), a second composite sheet (α2) having a laminated structure with a second release sheet (Y2) and a back-side curable resin film (X2) can be used. More specifically, step (TB1) is preferably a step of bonding the second composite sheet (α2), which has a laminated structure with a second release sheet (Y2) and a back-side curable resin film (X2) on the back side of a semiconductor wafer, using the aforementioned back-side curable resin film (X2) as the bonding surface. In this case, the timing of peeling the second release sheet (Y2) from the second composite sheet (α2) can be between steps (TB1) and (TB2), or after step (TB2). Here, when using the second composite sheet (α2) in step (TB1), the second release sheet (Y2) of the second composite sheet (α2) preferably functions as both a support for the back-side curable resin film (X2) and a dicing sheet. Furthermore, in step (S4), when the second composite sheet (α2) is adhered to the back-side 21b of the semiconductor wafer 30 with the curable resin film (r1) for dicing and monolithization, the second release sheet (Y2) functions as a dicing sheet generator, making dicing easier. Here, after step (S-BG), when performing step (S3), the above-mentioned step (TB1) is performed before performing step (S3), and then steps (S3) and (TB2) can be performed simultaneously. That is, the curable resin film (X1) and the back-side curable resin film (X2) can be cured simultaneously in one step. In this way, the number of curing processes can be reduced. <<Backside Curable Resin Film (X2)>> The backside curable resin film (X2) is a general curable resin film suitable for forming the backside protective film of semiconductor wafers. For example, it can be made of the same material and structure as the curable resin film (X1) described above. However, the backside of a semiconductor wafer is generally smooth without bumps or grooves, so the requirement (I) of the preferred conditions in the curable resin film (X1) cannot be met for the backside curable resin film (X2). Therefore, in the backside curable resin (X2), the X value can be less than 10 or more than 10,000. <Step (U)> In one embodiment of the method for manufacturing a first semiconductor wafer, the following step (U) may be further included. Step (U): Removing the hardened resin film (r1) covering the top of the bump, or a portion of the hardened resin film (r1) attached to the top of the bump, to expose the top of the bump. Examples of exposure processes that expose the top of the bump include, for example, wet etching or dry etching. Here, examples of dry etching processes include, for example, plasma etching. Furthermore, when the top of the bump is not exposed on the surface of the protective film, an exposure process may be performed to retract the protective film until the top of the bump is exposed. Regarding the timing of step (U), there are no particular limitations as long as the hardened resin film (r1) is exposed. It is preferable to perform the step (U) after step (S3) and before step (S4), when the first release sheet (Y1) and the back grinding sheet are not attached. [Method for Manufacturing a Second Semiconductor Wafer] The method for manufacturing a semiconductor wafer using the aforementioned curable resin film is similar to the method for manufacturing a first semiconductor wafer. It is used to form a curable resin film as a protective film on both the bump forming surface and the side surface of a semiconductor wafer having a bump forming surface with bumps. There is no particular limitation; it can also be used when the curable resin film as a protective film is formed only on the bump forming surface of a semiconductor wafer having a bump forming surface with bumps. Hereinafter, the method for manufacturing a second semiconductor wafer will be described only when the curable resin film as a protective film is formed on the bump forming surface of a semiconductor wafer having a bump forming surface with bumps. The method for manufacturing a second semiconductor wafer in this embodiment includes the following steps (V1) to (V4) in sequence. Step (V1): Preparing a semiconductor wafer with a bump forming surface. Step (V2): Pressing and adhering the curable resin film as described above to the bump forming surface of the semiconductor wafer, and covering the bump forming surface of the semiconductor wafer with the curable resin film. Step (V3): Curing the curable resin film to obtain a semiconductor wafer with a curable resin film. Step (V4): Monolithizing the semiconductor wafer with the curable resin film to obtain a semiconductor wafer with the bump forming surface covered by the curable resin film. The semiconductor wafer prepared in step (V1) can be, for example, the same as the semiconductor wafer 21 with a bump forming surface 21a having bumps 22 described in step (S1). Step (V2) is the same as step (S2). Furthermore, by pressing and adhering the curable resin film as described above to the bump-forming surface of the semiconductor wafer, the curable resin film can effectively cover the entire bump-forming surface, including the bottom of the bump base. Also, as in step (S2), the curable resin film (X1) can, from an operational point of view, also be used as a first composite sheet (α1) having a laminated structure of a first release sheet (Y1) and a curable resin film (X1). Step (V3) is the same as step (S3). Figure 8 shows a summary of step (V4). Figure 8 shows the components corresponding to the components shown in Figure 6 in the summary of step (S4) of the above-described method for manufacturing the first semiconductor wafer, with a dash symbol appended to the end of each symbol in Figure 6. Step (V4) involves cutting the semiconductor wafer 21' and the first hardened resin film (r1') along an assumed predetermined dicing line to monolithize the semiconductor wafer 30' with the first hardened resin film (r1') attached. The monolithization of the semiconductor wafer with the hardened resin film in step (V4) can be performed by various methods used when wafer-forming semiconductor wafers (e.g., blade dicing, laser dicing, stealth dicing, blade dicing followed by grinding, and stealth dicing followed by grinding). Here, after step (V2) and before step (V3), or after step (V3) and before step (V4), the following step (V-BG) may be included. Step (V-BG): A step of grinding the back side of the semiconductor wafer. However, when step (V4) employs stealth dicing (registered trademark), blade dicing followed by grinding, or stealth dicing followed by grinding, step (V-BG) is preferably performed in step (V4). This allows for the simultaneous monolithization of the semiconductor wafer with the hardened resin film and the thinning of the semiconductor wafer. Furthermore, the manufacturing method of the second semiconductor wafer in this embodiment may also include any or both of the above-described steps (TB) and (U). However, when step (TB) is used, the back protective film is formed on the back side of the semiconductor wafer having a bump formation surface with bumps. Therefore, step (TB) is replaced by the following step (TA). Step (TA): The step of forming a back protective film on the back side of the semiconductor wafer having a bump formation surface with bumps. More specifically, step (TA) preferably includes the following steps (TA1) and (TA2) in sequence. ･ Step (TA1): The step of attaching a back-side curable resin film (X2) to the back side of the semiconductor wafer. ･ Step (TA2): The step of curing the back-side curable resin film (X2) to form a back-side curable resin film (r2). [Semiconductor Wafer] The semiconductor wafer of this embodiment has a bump forming surface with bumps, and a hardened resin film formed by hardening a hardened resin film of this embodiment is provided on the bump forming surface. Therefore, according to this embodiment, a semiconductor wafer can be provided in which a hardened resin film formed by hardening a hardened resin film that can reduce the warpage of the bumped wafer is provided on the bump forming surface of the semiconductor wafer having a bump forming surface with bumps. Furthermore, a semiconductor wafer can be provided in which a hardened resin film formed by hardening a hardened resin film that can reduce the warpage of the bumped wafer is provided on the bump forming surface of the semiconductor wafer having a bump forming surface with bumps, and further, a back protective film is provided. The semiconductor wafer of the present invention has a bump forming surface with bumps, and a hardened resin film formed by curing the hardened resin film of the present invention is applied to both the bump forming surface and the side surface. The semiconductor wafer of the present invention is obtained by cutting the hardened resin film embedded in the trench formed in the semiconductor wafer fabrication wafer along a predetermined dicing line and then monolithically processing it. The hardened resin film is a hardened form of the hardened resin film. Therefore, according to this embodiment, the presence of the hardened resin film formed by curing the hardened resin film on both the bump forming surface and the side surface of the semiconductor wafer having the bump forming surface reduces the warpage of the bumped wafer. Furthermore, a semiconductor wafer having a back protective film is also provided, where the hardened resin film formed by curing the hardened resin film on both the bump forming surface and the side surface of the semiconductor wafer having the bump forming surface reduces the warpage of the bumped wafer. [Example] Secondly, the present invention will be specifically described by way of embodiments, but the present invention is not limited to the following embodiments. 1. Raw materials for manufacturing compositions for forming curable resin films The raw materials for manufacturing compositions for forming curable resin films are as follows. (1) Polymer component (A) ･(A)-1: Polyvinyl butyral (manufactured by Sekisui Chemicals Co., Ltd. "S-Lec BL-10", weight average molecular weight 25000, glass transition temperature 59°C) having the constituent units represented by the following formulas (i)-1, (i)-2 and (i)-3. (where l) 1 is approximately 28 m 1 represents 1 to 3, n 1 is an integer between 68 and 74. ･(A)-2: Polyaromatic ester (Unitika Co., Ltd. "UNIFINER (registered trademark) M-2040") (2) Epoxy Resin (B1) [Liquid Epoxy Resin] ･(B1)-1: Liquid modified bisphenol A type epoxy resin (manufactured by DIC Corporation, "EPICLONEXA-4850-150", number average molecular weight 900, epoxy equivalent 450g / eq) [Solid Epoxy Resin] ･(B1)-2: Naphthalene type epoxy resin (manufactured by DIC Corporation, "EPICLON (registered trademark) HP-4710", epoxy equivalent 170g / eq) ･(B1)-3: Naphthalene type epoxy resin (manufactured by DIC Corporation, "EPICLON (registered trademark) HP-5000", epoxy equivalent 252g / eq) ･(B1)-4: Naphthalene type epoxy resin (manufactured by DIC Corporation, "EPICLON (registered trademark) HP-4700", epoxy equivalent 160~170g / eq) (3) Thermosetting agent (B2) ･(B2)-1: O-cresol type phenolic varnish resin (DIC Corporation "PHENOLITE KA-1160", hydroxyl equivalent 117g / eq) (4) Hardening accelerator (C) ･(C)-1: 2-Phenylon-4,5-Dihydroxymethylimidazolium (manufactured by Shikoku Chemical Industry Co., Ltd. "CUREZOL2PHZ-PW") (5) Filler (D) ･(D)-1: Spherical silicon dioxide modified with epoxy groups (admatechs Inc. "admanano YA050C-MKK", average particle size 50nm) (6) Additives (G) ･(G)-1: Surfactant (acrylic polymer, BYK Corporation "BYK-361N") ･(G)-2: Silicon oil (arane-modified silicone oil, Momentive Performance Materials Japan Co., Ltd. "XF42-334") 2. Examples 1-4 and Comparative Examples 1-3 2-1. Example 1 (1) Preparation of a thermosetting resin film forming composition (1) Polymer component (A)-1 (100 parts by mass), epoxy resin (B1)-1 (745 parts by mass), epoxy resin (B1)-3 (514 parts by mass), thermosetting agent (B2)-1 (409 parts by mass), curing accelerator (C)-1 (5 parts by mass), filler (D)-1 (500 parts by mass), additive (G)-1 (56 parts by mass), and additive (G)-2 (6 parts by mass) were dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to obtain a thermosetting resin film forming composition (1) with a total concentration of all components other than the solvent of 60% by mass. Furthermore, the amount of components other than the solvent shown here is all, excluding the amount of the target substance containing the solvent. (2) The thermosetting resin film was manufactured using a release film made of polyethylene terephthalate (PET) with a single side treated with polysiloxane (SP-PET381031 manufactured by Lintec Corporation, thickness 38 μm). The above-obtained composition (1) was coated on the release-treated side and dried at 120°C for 2 minutes to form a thermosetting resin film with a thickness of 45 μm (hereinafter also referred to as "F(1)-45"). In this embodiment, the thickness of each layer was measured at 23°C using a constant pressure thickness gauge manufactured by Teclock Corporation (model: "PG-02J", standard specifications: according to JIS K 6783:2009, JIS Z 1702:1994, JIS Z 1709:1995). 2-2. Examples 2-4 and Comparative Examples 1-3: The types and amounts of components contained in the composition (1) for forming thermosetting resin films were as shown in Table 1 below. Except for changing any one or both of the types and amounts of the components used in the manufacture of the composition (1) for forming thermosetting resin films, a thermosetting resin film with a thickness of 45 μm was formed using the same method as in Example 1. Furthermore, "-" in the component-containing column of Table 1 indicates that the composition for forming thermosetting resin films does not contain that component. 3. The thermosetting resin film obtained above was evaluated as follows. The results are shown in Table 2. 3-1. Determination of Gc1 and Gc300 of thermosetting resin films and calculation of X-value: Twenty thermosetting resin films with a thickness of 45 μm were prepared. These thermosetting resin films were then laminated, and the resulting laminated films were cut into circular plates with a diameter of 25 mm to prepare test pieces of thermosetting resin films with a thickness of 900 μm. The test piece setting area in the viscoelasticity measuring apparatus (Anton Paar "MCR301") was preheated to 80°C. The aforementioned thermosetting resin film test pieces were placed on this setting area, and the measuring fixture was pushed onto the test piece, fixing the test piece in place. Next, under conditions of 90°C and a measuring frequency of 1 Hz, the strain generated by the test piece was allowed to increase in stages within the range of 0.01% to 1000%, and the storage modulus Gc of the test piece was measured. Then, the X-value was calculated from the measured values ​​of Gc1 and Gc300. 3-2. Determination of tanδ and elastic modulus E' of thermosetting resin film after curing: Fifteen thermosetting resin films with a thickness of 45 μm were laminated at 60 °C to prepare laminated films with a thickness of 0.675 mm. These laminated films were then heated and cured at 130 °C and 0.5 MPa for 240 minutes to prepare test pieces (test piece dimensions before cutting: thickness 0.7 mm, size 30 mm × 40 mm). After cooling, the test pieces were returned to room temperature (25 °C) and then cut while being heated at 90 °C (test piece dimensions after cutting: 7 mm × 20 mm). The tanδ (peak value from -50 to 300 °C) and elastic modulus E' of the thermosetting resin film after curing were determined according to JIS K 7244-4:1999. Furthermore, the conditions for curing by energy beam irradiation were as follows: five 45 μm thick thermosetting resin films were laminated at 60°C, with a laminated film thickness of 0.225 mm, and an irradiance of 230 mw / cm². 2 The light intensity is 500 mJ / cm 2 <Test Conditions> • Testing Apparatus: Viscoelasticity Testing Apparatus (Trade Name: DMA Q800, Kitahama Manufacturing Co., Ltd.) • Temperature: -50~300℃ • Heating Rate: 10℃ / min • Frequency: 11Hz • Suction Cup Distance: 10mm • Testing Mode: Tensile 3-3. Evaluation of Warpage: On an 8-inch circular electrolytic copper foil (35μm thick, manufactured by Kansai Electronics Industry Co., Ltd.), a composite sheet was formed by bonding a 45μm thick thermosetting resin film (Lintec Corporation "SP-PET381031", 38μm thick) to the copper foil. This was done using a benchtop laminator (product name: "LPD3212", manufactured by Fujipla Corporation) with a heat-bonding process (bonding pressure 0.3MPa, bonding temperature 60℃, bonding speed 1mm / s, 1 reciprocating motion). Next, the thermosetting resin film bonded to the copper foil was cut along the circular copper foil using a cutter to create a test piece. Visual inspection confirmed that the test piece was free of warpage. After peeling off the release film, the piece was heat-cured for 240 minutes at 130℃ and 0.5MPa. Then, allow it to cool and return to room temperature (25°C). Apply adhesive tape (made by Nichiban, trade name "Transparent Tape (registered trademark) LP-24", tape width 24mm) to approximately three roughly equal sections around the copper foil with the thermosetting resin film adhered to it. Measure the warpage at each of the designated locations (where the warpage is greatest). Warpage of 15mm or less is acceptable; smaller warpage is preferable. As can be seen from Examples 1 to 4, a hardened resin film with a tanδ of 0.43 or higher after hardening can be used to form a protective film for semiconductor wafers, which can reduce the warpage of the wafer with bumps. 10, 20: Composite sheet; 30, 30': Semiconductor wafer; 40, 40': Semiconductor wafer; 1, 11, 11': Release sheet; 2, 12: Curable resin film; 3, 13: Substrate; 4, 14: Release layer; 15: Intermediate layer; 21, 21': Semiconductor wafer; 21a, 21a': Bump forming surface; 21b: Back side; 22, 22': Bump; 23: Groove; X1: Curable resin film; Y1: First release sheet; r1: Curable resin film; α1: First composite sheet. [Figure 1] A schematic cross-sectional view showing the structure of a composite wafer in one embodiment. [Figure 2] A schematic cross-sectional view showing the structure of a composite wafer in another embodiment. [Figure 3] A schematic cross-sectional view showing an example of a semiconductor wafer prepared in step (S1). [Figure 4] A schematic diagram showing step (S2). [Figure 5] A schematic diagram showing step (S3). [Figure 6] A schematic diagram showing step (S4). [Figure 7] A schematic diagram showing step (S-BG). [Figure 8] A schematic diagram showing step (V4). 1: Peeling off the thin sheets 2: Curable resin film 3: Substrate 4: Peeling layer 10: Composite sheet

Claims

1. A curable resin film, which is used to form a curable resin film on the bump-forming surface of a semiconductor wafer having bumps, wherein, according to JIS K 7244-4:1999, under the test conditions of a temperature of -50 to 300°C, a heating rate of 10°C / min, a frequency of 11 Hz, and a tensile test mode, the tanδ of the cured curable resin film is measured to be 0.43 or higher, wherein the cured resin film contains liquid epoxy resin, and the content of the liquid epoxy resin in the cured resin film is 30 to 45% by mass.

2. The curable resin film of claim 1, wherein the tanδ of the aforementioned curable resin film after curing is 0.50 or more.

3. The curable resin film as claimed in claim 1 or 2, wherein the aforementioned curable resin film has an elastic modulus E' of 20 MPa or less after curing at 130°C.

4. The curable resin film of claim 1 or 2, wherein the curable resin film contains liquid epoxy resin, and the content of the liquid epoxy resin in the curable resin film is 41 to 45% by mass.

5. The curable resin film of claim 1 or 2, wherein the aforementioned bump forming surface and side surface of the aforementioned semiconductor wafer are both used to form the aforementioned curable resin film.

6. A composite sheet having a laminated structure obtained by laminating a curable resin film as claimed in claim 1 or 2 with a release sheet.

7. The composite sheet of claim 6, wherein the aforementioned release sheet has a substrate and a release layer, the release layer facing the aforementioned curable resin film.

8. The composite sheet of claim 7, wherein an intermediate layer is further provided between the aforementioned substrate and the aforementioned release layer.

9. The composite sheet of claim 7, wherein the aforementioned release layer is a layer formed of a composition comprising an ethylene-vinyl acetate copolymer.

10. A method for manufacturing a semiconductor wafer, comprising the following steps (V1) to (V4) in sequence: Step (V1): preparing a semiconductor wafer having a bump forming surface with bumps; Step (V2): pressing and adhering a curable resin film as claimed in claim 1 or 2 onto the aforementioned bump forming surface of the semiconductor wafer, and covering the aforementioned bump forming surface of the semiconductor wafer with the aforementioned curable resin film; Step (V3): curing the aforementioned curable resin film to obtain a semiconductor wafer with a curable resin film; Step (V4): monolithizing the aforementioned semiconductor wafer with a curable resin film to obtain a semiconductor wafer with the aforementioned bump forming surface covered by the aforementioned curable resin film.

11. A method for manufacturing a semiconductor wafer, comprising the following steps (S1) to (S4) in sequence: Step (S1): preparing a semiconductor wafer fabrication wafer, wherein the semiconductor wafer fabrication wafer has a groove formed on the bump forming surface of the semiconductor wafer having bumps, without reaching the back side; Step (S2): pressing and adhering the curable resin film of claim 5 to the bump forming surface of the semiconductor wafer fabrication wafer, and embedding the curable resin film in the groove formed on the semiconductor wafer fabrication wafer by covering the bump forming surface of the semiconductor wafer fabrication wafer with the curable resin film; Step (S3): curing the curable resin film to obtain a semiconductor wafer fabrication wafer with a curable resin film attached. Step (S4): Along the aforementioned predetermined dividing line, the aforementioned semiconductor wafer with the hardened resin film is monolithically processed to obtain a semiconductor wafer whose bump formation surface and side surface are covered by the aforementioned hardened resin film; Further, after the aforementioned step (S2) and before the aforementioned step (S3), after the aforementioned step (S3) and before the aforementioned step (S4), or in the aforementioned step (S4), the following step (S-BG) is included: Step (S-BG): The aforementioned back side of the semiconductor wafer is ground.

12. The method for manufacturing a semiconductor wafer as claimed in claim 10, further comprising the following step (TA): Step (TA): forming a back protective film on the back side of the aforementioned semiconductor wafer.

13. The method for manufacturing a semiconductor wafer as claimed in claim 11, further comprising the following step (TB): step (TB) of forming a back protective layer on the back side of the aforementioned semiconductor wafer.

14. A semiconductor wafer having a hardened resin film formed by hardening a hardened resin film as claimed in claim 1 on the bump forming surface of the semiconductor wafer having bumps.

15. A semiconductor wafer comprising a hardened resin film formed by hardening a hardened resin film as described in claim 5 on both the bump forming surface and the side surface of the semiconductor wafer having bumps.

16. The semiconductor wafer of claim 14 or 15, wherein a back protective film is further provided on the back side of the aforementioned semiconductor wafer.

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