Methods of monitoring gas byproducts of a bonding system, and related monitoring systems and bonding systems

Abstract

The present invention provides a method for monitoring gaseous byproducts of a bonding system. The method includes: providing a plurality of bonding systems, each bonding system including a reducing gas delivery system for bonding operations, each bonding system being configured to discharge gaseous byproducts; connecting each bonding system to a monitoring device using separate gas delivery paths; and monitoring the composition of at least a portion of the gaseous byproducts using the monitoring device.

Description

[Technical Field]

[0001] The present invention relates to bonding processes and bonding systems, and more particularly to an improved method for monitoring gaseous byproducts of such bonding systems. [Previous Technology]

[0002] Traditional semiconductor packaging typically involves die attachment and wire bonding processes. Advanced semiconductor packaging technologies (such as flip chip bonding, thermocompression bonding, etc.) continue to gain attention in the industry. For example, in thermocompression bonding, heat and / or pressure (and sometimes ultrasonic energy) are used to form multiple interconnects between (i) conductive structures on a semiconductor element and (ii) conductive structures on a substrate.

[0003] In certain flip-chip bonding or thermoforming bonding applications, the conductive structures of the semiconductor element and / or substrate may include conductive structures susceptible to oxidation and / or other contamination (e.g., copper pillars). In such applications, it is desirable to provide an environment suitable for bonding. Typically, such an environment can be provided by using a reducing gas at the bonding area of ​​the bonding system. The reducing gas reduces the potential oxidation and / or contamination of the conductive structures of the semiconductor element and / or substrate.

[0004] In connection with such bonding systems, gaseous byproducts may be released into the environment. It is desirable to monitor and / or control the amount of hazardous materials contained in such gaseous byproducts.

[0005] Therefore, it is desirable to provide an improved method and related monitoring system for monitoring gaseous byproducts in a junction system. [Summary of the Invention]

[0006] According to an exemplary embodiment of the present invention, a method for monitoring gaseous byproducts of a bonding system is provided. The method includes: (a) providing a plurality of bonding systems, each bonding system including a reducing gas delivery system for bonding operations, each bonding system being configured to discharge gaseous byproducts; (b) connecting each bonding system to a monitoring device using separate gas delivery paths; and (c) monitoring the composition of at least a portion of the gaseous byproducts using the monitoring device.

[0007] According to another exemplary embodiment of the present invention, a monitoring system for monitoring gaseous byproducts of a plurality of junction systems is provided. The monitoring system includes a plurality of junction systems. Each junction system includes a reducing gas delivery system used in conjunction with junction operations. Each junction system is configured to discharge gaseous byproducts. The monitoring system also includes a monitoring device for monitoring the composition of at least a portion of the gaseous byproducts. The monitoring system also includes a plurality of connection structures. Each connection structure provides a gas delivery path between a respective junction system and the monitoring device.

Implementation Method

[0009] U.S. Patent No. 10,861,820 (titled "METHODS OF BONDING SEMICONDUCTOR ELEMENTS TO A SUBSTRATE, INCLUDING USE OF A REDUCING GAS, AND RELATED BONDING MACHINES") and U.S. Patent No. 11,205,633 (titled "METHODS OF BONDING OF SEMICONDUCTOR ELEMENTS TO SUBSTRATES, AND RELATED BONDING SYSTEMS") both relate to bonding systems employing reducing gases, and are incorporated herein by reference in their entirety.

[0010] As used herein, the term "semiconductor element" is intended to refer to any structure that includes (or is configured to include in a later step) a semiconductor wafer or die. Exemplary semiconductor elements include exposed semiconductor dies, semiconductor dies on a substrate (e.g., leadframe, PCB, carrier, semiconductor wafer, semiconductor dies, BGA substrate, semiconductor element, etc.), packaged semiconductor devices, flip-chip semiconductor devices, dies embedded in a substrate, stacks of semiconductor dies, etc. Furthermore, a semiconductor element may include elements configured to be bonded or otherwise included in a semiconductor package (e.g., spacers, substrates, etc., bonded in a stacked die configuration).

[0011] As used herein, the term "substrate" is intended to refer to any structure to which a semiconductor element may be bonded. Exemplary substrates include, for example, lead frames, PCBs, carriers, modules, semiconductor wafers, semiconductor dies, BGA substrates, other semiconductor elements, etc.

[0012] As used herein, the term "bonding system" is intended to refer to any type of bonding machine (e.g., thermoforming bonding machine, flip chip bonding machine, die attachment system, etc.) that includes at least one bonding head for bonding a semiconductor element to a substrate. Those skilled in the art will understand that a particular bonding machine includes a single bonding head for bonding one semiconductor element at a time; however, other bonding machines may include multiple bonding heads.

[0013] According to various exemplary embodiments of the present invention, a system (and method) is provided for sampling multiple bonding systems (e.g., a reducing gas emission system for multiple bonding systems) to determine the concentration of a specific compound (e.g., an acidic compound, a harmful acidic compound, such as formic acid) using a single monitoring device. In a more specific example, the acidic compound is contained in the reducing gas, and a single monitoring device can be used to measure the concentration of the acidic compound (and / or other undesirable compounds) emitted from an array of bonding systems (e.g., a hot press bonder, a flip chip bonder, etc.) in the gaseous byproducts.

[0014] In a specific exemplary embodiment, the concentration of formic acid in the exhaust gas stream is measured using a Fourier transform infrared spectrometer (FTIR) or other suitable monitoring device. Such monitoring devices (e.g., measuring instruments) are often very expensive. According to the invention, the sampling interval rate for each junction system can be configured to allow monitoring of multiple junction systems using a single monitoring device. This approach saves on purchase, operation, and maintenance costs (compared to multiple monitoring devices). Furthermore, using a single monitoring device eliminates some of the problems associated with inter-unit calibration uncertainties (of the monitoring device) and allows a single instrument to provide data for multiple junction systems.

[0015] According to a specific exemplary embodiment of the present invention, a monitoring device (e.g., an FTIR measuring instrument) can be used to identify unacceptable process conditions (e.g., the rate of increase of formic acid emissions or other related process emissions). In a specific example, an acceptance criterion may be associated with each monitored process condition (e.g., acidic components, such as an acceptable parts per million (PPM) level of acids like formic acid in exhaust gases / emissions). If the actual process condition monitored (e.g., acidic components in exhaust gases) exceeds the acceptance criterion, the monitoring system and / or the specifically associated connection system may take appropriate measures. For example, the monitoring device may communicate with each connection system. Thus, the monitoring device and / or the associated connection system (e.g., a connection system with unacceptable process conditions, such as excessively high acid PPM in exhaust gases) may generate an alarm, or adjust the operation of a portion of the monitoring system (e.g., adjust the settings of the mitigation system, adjust the settings of the reducing gas supply, such as the formic acid fill level in the bubbler, etc.), or stop the operation of the associated connection system.

[0016] Each of Figures 1A to 1I illustrates a monitoring system (e.g., 100a1, 100a2, 100a3, ..., 100an in Figure 1A), a monitoring device 150, and multiple connection structures 126, comprising a plurality of connection systems (e.g., 100a, 100b, etc.). Each connection system includes a reducing gas delivery system used in conjunction with the connection operation (e.g., see the exemplary reducing gas delivery systems shown in Figures 2 and 3). Each connection system is configured to discharge gaseous byproducts (e.g., see the main discharge section 134a and discharge section 134b and the associated connection structures). Such gaseous byproducts may include unused and / or residual reducing gas, byproducts of reducing oxides using reducing gas, etc.

[0017] Specific joining systems (e.g., see Figures 1A, 1C, 1D, 1E, 1G, 1H, and 1I) are shown connected to reduction system 120, through which gaseous byproducts are generated. Specific joining systems (e.g., see Figures 1B, 1C, 1D, 1F, 1G, and 1H) employ machine emission system 136 to remove reducing gases from the operating area of ​​one of the joining systems. Specific joining systems (e.g., see Figures 1C, 1D, 1G, and 1H) include both the aforementioned reduction system 120 and machine emission system 136.

[0018] After a reducing gas (e.g., formic acid, acetic acid, etc.) is supplied to the bonding region of a bonding system (e.g., bonding system 100a1) (and may be used in conjunction with the bonding process), a gaseous byproduct is created. This gaseous byproduct may be generated by (i) a reduction system 120 and / or (ii) a machine emission system 136.

[0019] The reduction system 120 can reduce a portion of the reducing gas (which can be considered toxic) by combustion or otherwise altering its chemical structure. After being processed by the reduction system 120, the gaseous byproducts are gaseous compounds drawn from the reduction system 120 toward the main exhaust 134a and / or exhaust 134b. If such gaseous byproducts from one of the connection systems are to be sampled, the relevant valve 122 is opened, and the gaseous byproducts flow to the exhaust 134b through the relevant connection structure 126 (assisted by the pump 124). The gaseous byproducts can then be sampled by the monitoring device 150. The remaining gaseous byproducts are conveyed to the main exhaust 134a through piping or some other connection structure.

[0020] The machine exhaust system 136 can be operated continuously (or selectively) by drawing reducing gas away from the operating area of ​​the joining system. This operating area can be a much larger area than the joining area of ​​the joining system. For example, the operating area may include, among other areas, the material handling area of ​​the system. The operation of the machine exhaust system 136 mixes the reducing gas with air (or some other gas) to create another gaseous byproduct. If this gaseous byproduct from the machine exhaust system 136 of one of the joining systems is to be sampled, the relevant valve 122 is opened, and the gaseous byproduct flows to the exhaust section 134b through the relevant connection structure 126 (assisted by pump 124). This gaseous byproduct can then be sampled by the monitoring device 150. The remaining gaseous byproduct is transported to the main exhaust section 134a through piping or some other connection structure.

[0021] The monitoring device 150 can be used to sample gaseous byproducts from the reduction system 120 and / or the machine emission system 136 using the various exemplary monitoring systems shown in Figures 1A to 1I (e.g., to monitor the composition of the gaseous byproducts, such as to detect the presence of acid at an acceptable ppm level in the gaseous byproducts).

[0022] That is, each monitoring system includes a monitoring device 150. The monitoring device 150 (e.g., a binary gas analyzer, a Fourier transform infrared spectroscopy (FTIR) gas analyzer, a mass spectrometry gas analyzer, a mass spectrometer combined with a gas chromatograph, etc.) is configured to monitor the composition of gaseous byproducts during operation of each combined system. The monitoring device 150 represents an analyzer that includes components not shown but required in a particular application, such as valves, pumps, flow meters (e.g., mass flow meters), etc.

[0023] Referring now to FIG. 1A, the monitoring system 100a is shown as including connection systems 100a1, 100a2, 100a3, ..., 100an. Each of these connection systems includes a reduction system 120 and an associated connection structure 126 (e.g., a conduit, pipe, duct, etc., providing a gas delivery path between each connection system and the monitoring device 150). Therefore, in the embodiment shown in FIG. 1A, the illustrated valve 122, pump 124, and connection structure 126 can be used to sample and monitor gaseous byproducts from any reduction system 120.

[0024] In a specific example, let us assume that it is desirable to sample and monitor the composition of gaseous byproducts from the reduction system 120 of the junction system 100a1. In this case, valve 122 corresponding to junction system 100a1 is open (while other valves 122 corresponding to junction systems 100a2, 100a3, ..., 100an are closed). Therefore, monitoring device 150 can receive and sample individual gaseous byproducts. These gaseous byproducts follow a gas delivery path 132 as shown in FIG1I (FIG1I shows monitoring system 100a from FIG1A, but highlights the specific gas delivery path 132).

[0025] Referring now to FIG. 1B, the monitoring system 100b is shown as including connection systems 100b1, 100b2, 100b3, ..., 100bn. Each of these connection systems includes a machine exhaust system 136 and an associated connection structure 126 (e.g., a conduit, pipe, duct, etc., providing a gas delivery path between each connection system and the monitoring device 150). Therefore, in the embodiment shown in FIG. 1B, the illustrated valve 122, pump 124, and connection structure 126 can be used to sample and monitor gaseous byproducts from any machine exhaust system 136.

[0026] Referring now to FIG. 1C, the monitoring system 100c is shown as including connection systems 100c1, 100c2, 100c3, ..., 100cn. Each of these connection systems includes both a reduction system 120 and a machine emission system 136, and an associated connection structure 126 (e.g., a conduit, pipe, duct, etc. that provides a gas delivery path between each connection system and the monitoring device 150). Thus, in the embodiment shown in FIG. 1C, the illustrated valve 122, pump 124, and connection structure 126 can be used to sample and monitor the combined gaseous byproducts from the respective pairs of reduction systems 120 and machine emission systems 136.

[0027] Referring now to FIG. 1D, monitoring system 100d is shown as including junction systems 100d1, 100d2, 100d3, ..., 100dn. Each of these junction systems includes both a reduction system 120 and a machine emission system 136, and associated connection structures 126 (e.g., pipes, conduits, etc. that provide a gas delivery path between each junction system and monitoring device 150). Compared to FIG. 1C (where combined gaseous byproducts from the respective pairs of reduction systems 120 and machine emission systems 136 can be sampled and monitored), in the configuration of FIG. 1D, additional valves 122 and pumps 124 are provided, allowing sampling and monitoring of gaseous byproducts from either the reduction system 120 or the machine emission system 136 of any junction system using the illustrated valves 122, pumps 124, and connection structures 126.

[0028] Figures 1E to 1H illustrate monitoring systems 100e to 100h. Unlike monitoring systems 100a to 100d from Figures 1A to 1D (where valve 122 and pump 124 are located at or adjacent to the relevant connection system), in monitoring systems 100e to 100h, valve 122 (and a single pump 124) are located at or adjacent to monitoring device 150. Therefore, a single pump 124 can be used. Furthermore, discrete / individual gas delivery paths are illustrated for each connection system. In addition: monitoring system 100e (including connection systems 100e1, 100e2, 100e3, ..., 100en) is conceptually similar to monitoring system 100a; monitoring system 100f (including connection systems 100f1, 100f2, 100f3, ..., 100fn) is conceptually similar to monitoring system 100b; monitoring system 100g (including connection systems 100g1, 100g2, 100g3, ..., 100gn) is conceptually similar to monitoring system 100c; and monitoring system 100h (including connection systems 100h1, 100h2, 100h3, ..., 100hn) is conceptually similar to monitoring system 100d. Throughout this application, similar reference numerals denote similar elements unless otherwise specified.

[0029] Referring now to FIG. 2, a bonding system 100a' (e.g., a thermoforming machine, a flip-chip bonding machine, etc.) is provided (wherein bonding system 100a' is an example that may be included as any bonding system of FIG. 1A to FIG. 1I). Bonding system 100a' includes a support structure 102 for supporting substrate 104 during bonding operations (where substrate 104 includes a plurality of conductive structures 104a). Support structure 102 may include any suitable structure for a particular application. In FIG. 2, support structure 102 includes a top plate 102a (configured to directly support substrate 104), a chuck 102c, and a heater 102b disposed therebetween. In applications where the bonding operation requires heat to heat substrate 104, a heater such as heater 102b may be employed.

[0030] The bonding system 100a' also includes a bonding head assembly 106, which can be configured to move along (and around) multiple axes of the bonding system 100, such as, for example, the x-axis, y-axis, z-axis, θ (rotational) axis, etc. The bonding head assembly 106 includes a heater 108 and a bonding tool 110. That is, in a particular bonding system (e.g., a thermoforming machine), it is desirable to heat the bonding tool. Therefore, although FIG2 shows a separate heater 108 for heating the bonding tool 110 (for heating the semiconductor element 112 including multiple conductive structures 112a), it should be understood that the heater 108 and the bonding tool 110 can be integrated into a single element (e.g., a heated bonding tool). FIG2 also shows a machine exhaust system 136' for removing reducing gases from the operating area of ​​the bonding system 100a' (which is an example of the machine exhaust system 136 shown in FIG1A to FIG1I). From the machine emission system 136', gaseous byproducts can be sampled and monitored using a monitoring device 150 (e.g., see Figures 1A to 1I).

[0031] In conjunction with the bonding operation, the semiconductor element 112 is bonded to the substrate 104 using a bonding tool 110. During the bonding operation, corresponding conductive structures in the conductive structure 112a are bonded (e.g., using heat, force, ultrasonic energy, etc.) to the respective conductive structures in the conductive structure 104a.

[0032] In certain bonding applications (e.g., flip-chip and / or thermoforming bonding), it is desirable to provide an environment suitable for bonding. Conventionally, such an environment can be provided by using a reducing gas at the bonding area to reduce potential contamination of the semiconductor element or the conductive structure of the substrate to which it will be bonded.

[0033] The bonding system 100a' also includes a reducing gas delivery system 140 for supplying reducing gas 130 to the bonding region 138 during bonding of the semiconductor element 112 to the substrate 104. The reducing gas delivery system 140 is shown integrated with the bonding head assembly 106. The reducing gas delivery system 140 includes a bonding head manifold 114 (carried by the bonding head assembly 106) for receiving and distributing fluids (e.g., gases, vapors, etc.) required for a given application. A reducing gas source 152 (e.g., piping from a source, a bubbler-type system, etc.) supplies reducing gas to the bonding head manifold 114 of the reducing gas delivery system 140. The reducing gas typically includes a carrier gas and an acid (e.g., formic acid, acetic acid, etc.). For example, the reducing gas may be a saturated vapor gas.

[0034] In Figure 2, although the connector manifold 114 is shown in cross-section, the actual connector manifold 112 surrounds the connector tool 110 (e.g., the connector manifold is coaxially configured around the connector tool 110). Of course, the connector manifold 114 may have a different configuration than that shown in Figure 2. Furthermore, it should be understood that for simplicity, specific details of the connector manifold 114 (e.g., structural details for distributing reducing gas within the connector manifold 114, structural details for distributing shielding gas within the connector manifold 114, structural details for drawing a vacuum through the central channel of the connector manifold 114 using a vacuum system, etc.) have been omitted.

[0035] The connector manifold 114 includes three channels 114a, 114b, and 114c with different functions. The outer channel 114a receives a shielding gas 128 (e.g., nitrogen) from a shielding gas source 118. That is, the shielding gas 128 is supplied from the shielding gas source 118 (e.g., a nitrogen supply source) through a connection structure 126 (wherein the connection structure 126 may include rigid tubing, flexible tubing, a combination of both, or any other structure suitable for carrying the fluid described herein) to the outer channel 114a of the connector manifold 114. From the outer channel 114a of the connector manifold 114, the shielding gas 128 is provided as a shield against the external environment. The inner channel 114c receives a reducing gas 130 (e.g., where the reducing gas is a saturated vapor gas) from a reducing gas source 152 and provides the reducing gas 130 in the regions of the semiconductor element 112 and the substrate 104 relevant to the bonding operation.

[0036] After the reducing gas 130 is distributed in the regions of the semiconductor element 112 and the substrate 104, the reducing gas 130 contacts the surfaces of each of the conductive structures 104a and 112a. The surfaces of the conductive structures 104a / 112a may then include reaction products (e.g., where the reaction products are provided due to: (i) surface oxides on the conductive structures 104a / 112a, and (ii) the reducing gas 130 (and heat, if necessary, may be provided by the heater 108 and transferred to the conductive structure 104a via contact with the conductive structure 112a)). It is desirable to remove the reaction products from the bonding region 138 (i.e., the region where the conductive structure 112a of the semiconductor element 112 is bonded to the corresponding conductive structure 104a of the substrate 104) using a vacuum provided via the outlet conduit 116 through the central channel 114b of the bonding manifold 114.

[0037] Semiconductor element 112 (carried by the bonding head assembly 106) is shown positioned above substrate 104. More specifically, FIG2 shows a reducing gas 130 and a shielding gas 128 provided at bonding region 138, and a vacuum system drawing a vacuum through the central channel 114b of bonding head manifold 114 via outlet conduit 116. Thus, the flow of reducing gas 130 reaches desired portions of semiconductor element 112 and substrate 104 (e.g., conductive structures 104a and 112a) for: removing contaminants from conductive structures 104b and 112b; and / or shielding conductive structures 104a and 112a from further potential contamination.

[0038] Also shown in FIG2 is that the corresponding conductive structure in the conductive structure 112a (of the semiconductor element 112) is aligned with the conductive structure in the conductive structure 104a (of the substrate 104). In a subsequent step (not shown), the process proceeds to a bonding step (e.g., a thermocompression bonding step), for example, by lowering the bonding head assembly 106. That is, the conductive structure 112a is bonded to the corresponding conductive structure 104a. This bonding process may be a thermocompression bonding process (e.g., including heat and / or bonding force, wherein the bonding force may be a higher bonding force, such as 50-300N), and may also include ultrasonic energy transfer (e.g., from an ultrasonic transducer included in the bonding head assembly 106).

[0039] FIG2 also shows a reduction system 104' for receiving reducing gas from the vacuum channel of the reducing gas delivery system 140 (which is an example of the reduction system 120 shown in FIG1A to FIG1I). Gas byproducts generated from the reduction system 104' can be sampled and monitored using a monitoring device 150 (e.g., see FIG1A to FIG1I).

[0040] Although FIG. 2 shows a joint manifold 114 integrated with the joint assembly 106 for: delivering reducing gas; delivering shielding gas; and providing a vacuum, the invention is not limited thereto. For example, instead of providing such functionality through integration of the manifold with the joint assembly, such functionality can be provided through integration with a support structure for supporting the substrate (see, for example, FIG. 3). Furthermore, such functionality can be separated between the joint assembly and the support structure (and possibly other structures of the joint system).

[0041] Figure 3 is a block diagram of the coupling system 100a”, which has specific elements and functions similar to those shown and described with reference to Figure 2, except that the manifold functions (delivering reducing gas; delivering shielding gas; and providing vacuum) are integrated into the support structure 202.

[0042] FIG3 illustrates a bonding system 100a (where bonding system 100a is an example that may be included in any bonding system in FIG1A to FIG1I) (e.g., a thermoforming bonding machine, a flip-chip bonding machine, etc.). The bonding machine 100a includes a support structure 202 for supporting a substrate 104 during the bonding operation (where the substrate 104 includes a plurality of conductive structures 104a). The support structure 202 may include any suitable structure for a particular application. In FIG3, the support structure 202 includes a top plate 202a (configured to directly support the substrate 104), a chuck 202c, and a heater 202b disposed therebetween. In applications where the bonding operation requires heat to heat the substrate 104, a heater, such as heater 202b, may be employed.

[0043] FIG3 also shows a joint assembly 106 (including a heater 108 and a joint tool 110), which can be configured to move along (and around) multiple axes of the joint system 100a”, such as, for example, the x-axis, y-axis, z-axis, θ (rotation) axis, etc. In FIG3, the joint assembly 106 is used to partially contain at least one of shielding gas 128 and reducing gas 130 (see description below). (It can be a machine exhaust system of any of FIG1A to FIG1I) to remove reducing gas from the joint area 138. FIG3 also shows a machine exhaust system 136 for removing reducing gas from the operating area of ​​the joint system 100a” (which is an example of the machine exhaust device 136 shown in FIG1A to FIG1I). From the machine exhaust system 136”, gaseous byproducts can be sampled and monitored using a monitoring device 150 (e.g., see FIG1A to FIG1I).

[0044] The bonding system 100a” includes a reducing gas delivery system 240 for supplying reducing gas 130 to the bonding region 138 during bonding of the semiconductor element 112 to the substrate 104. The reducing gas delivery system 240 is shown integrated with the support structure 202. In contrast to the bonding manifold 114 carried by the bonding head assembly 106 (as shown in FIG. 2), FIG. 3 shows a manifold 214 carried by and / or integrated with the support structure 202. The manifold 214 is configured to receive and dispense as needed in a given application. Fluids (e.g., gases, vapors, etc.). In Figure 3, although manifold 214 is shown in cross-section, the actual manifold 214 at least partially surrounds substrate 104. Of course, manifold 214 can have a different configuration than that shown in Figure 3. Furthermore, it should be understood that for simplicity, specific details of manifold 214 (e.g., structural details for dispensing reducing gas 130 within manifold 214, structural details for dispensing shielding gas 128 within manifold, structural details for vacuuming by a vacuum system through the central channel of manifold 214, etc.) have been omitted.

[0045] The manifold 214 includes three channels 214a, 214b, and 214c with different functions. The outer channel 214a receives a shielding gas 128 (e.g., nitrogen) from a shielding gas source 118. The shielding gas 128 is provided from the outer channel 214a of the manifold 214 as a shield against the external environment. The inner channel 214c receives a reducing gas 130 (e.g., a saturated vapor gas) from a reducing gas source 152 and provides the reducing gas 130 in the regions of the semiconductor element 112 and the substrate 104 associated with bonding operations.

[0046] After the reducing gas 130 is distributed in the regions of the semiconductor element 112 and the substrate 104, the reducing gas 130 contacts the surfaces of each of the conductive structures 104a and 112a. The surfaces of the conductive structures 104a / 112a may then include reaction products (e.g., where the reaction products are provided due to: (i) surface oxides on the conductive structures 104a / 112a, and (ii) the reducing gas 130 (and possibly heat provided by the heater 108 if desired)). It is desirable to remove the reaction products from the bonding region 138 (i.e., the region where the conductive structure 112a of the semiconductor element 112 is bonded to the corresponding conductive structure 104a of the substrate 104) using a vacuum provided via the outlet conduit 216 through the central channel 214b of the manifold 214.

[0047] Referring to FIG3, the semiconductor element 112 (carried by the bonding head assembly 106) is positioned above the substrate 104. FIG3 illustrates the provision of a reducing gas 130 and a shielding gas 128 at the bonding region 138, and the vacuum being drawn into the reduction system 104” by a vacuum system via an outlet line 216 through the central channel 214b of the bonding head manifold 214. Thus, the flow of the reducing gas 130 reaches the desired portions of the semiconductor element 112 and the substrate 104 (e.g., conductive structures 104a and 112a) for: removing contaminants from the conductive structures 104b and 112a; and / or shielding the conductive structures 104a and 112a from further potential contamination.

[0048] Also shown in FIG3 is that the corresponding conductive structure in the conductive structure 112a (of the semiconductor element 112) is aligned with the conductive structure in the conductive structure 104a (of the substrate 104). In a subsequent step, the process proceeds to a bonding step (e.g., a thermocompression bonding step), for example, by lowering the bonding head assembly 106. That is, the conductive structure 112a is bonded to the corresponding conductive structure 104a. This can be done through a thermocompression bonding process (e.g., including heat and / or bonding force, wherein the bonding force can be a higher bonding force, such as 50~300 N), and may also include ultrasonic energy transfer (e.g., from an ultrasonic transducer included in the bonding head assembly 106).

[0049] FIG3 also shows a reduction system 104 for receiving reducing gas from the vacuum channel of the reducing gas delivery system 240 (which is an example of the reduction system 104 shown in FIG1A to FIG1I). Gas byproducts generated from the reduction system 104 can be sampled and monitored using a monitoring device 150 (e.g., see FIG1A to FIG1I).

[0050] Figure 4 is a flowchart illustrating a method for monitoring gaseous byproducts of a junction system. As will be understood by those skilled in the art, specific steps included in the flowchart may be omitted; specific additional steps may be added; and the order of steps may be changed from the order shown, all of which are within the scope of this invention.

[0051] Referring specifically to FIG4, at step 400, a plurality of joining systems are provided (e.g., see the plurality of joining systems in any of FIG1A to FIG1I). Each joining system includes a reducing gas delivery system for use in the joining operation. Furthermore, each joining system is configured to discharge gaseous byproducts. At step 402, each joining system is connected to a monitoring device (e.g., see monitoring device 150 in each of FIG1A to FIG1I) using separate gas delivery paths. At optional step 404, reducing gas is transferred from the joining area of ​​one of the joining systems to the dissipation system of the joining system. The gaseous byproducts in optional step 404 include the discharge gas from the dissipation system. At optional step 406, a machine discharge system is operated to remove reducing gas from the operating area of ​​one of the joining systems. The gaseous byproducts in optional step 406 include the discharge gas from the machine discharge system. At step 408, the composition of at least a portion of the gaseous byproducts is monitored using a monitoring device.

[0052] Although this application is primarily described in relation to the sampling of gaseous byproducts provided by the use of mitigation systems and / or machine emission systems, it is not limited thereto. Other gaseous byproducts may be generated on the connection system, and these other gaseous byproducts may be monitored within the scope and spirit of the invention.

[0053] Although the invention has been described and illustrated herein with reference to specific embodiments, the invention is not intended to be limited to the details shown. Rather, various modifications may be made to the details within the equivalent scope and range of the claims and without departing from the invention.

[0054] This application claims priority to U.S. Provisional Application No. 63 / 311,018, filed on February 16, 2022, the contents of which are incorporated herein by reference. [Simplified Explanation of the Diagram]

[0008] The invention can be best understood when the following detailed description is read in conjunction with the accompanying drawings. It should be emphasized that, according to common practice, the various features in the drawings are not drawn to scale. Instead, for clarity, the dimensions of the various features have been arbitrarily enlarged or reduced. The drawings include the following figures: Figures 1A to 1I are block diagrams of various monitoring systems according to several exemplary embodiments of the invention; Figures 2 and 3 are block diagrams illustrating exemplary bonding systems that may be included in the monitoring systems according to several exemplary embodiments of the invention; and Figure 4 is a flowchart illustrating a method for monitoring gaseous byproducts of a bonding system according to an exemplary embodiment of the invention.

Claims

1. A method for monitoring gaseous byproducts of a bonding system, the method comprising the steps of: (a) providing a plurality of bonding systems, each bonding system including a reducing gas delivery system for use in bonding an operation, each bonding system being configured to discharge gaseous byproducts; (b) connecting each bonding system to a monitoring device using a separate gas delivery path; and (c) using the monitoring device to monitor the composition of at least a portion of the gaseous byproducts.

2. As in request item 1, where, The reducing gas delivery system provides a reducing gas comprising a carrier gas and an acid.

3. As in request item 2, wherein, The acid includes at least one of formic acid and acetic acid.

4. As in request item 2, wherein, The reducing gas is a saturated vapor gas.

5. As in request item 1, where, Each of the bonding systems includes a bonding head assembly configured for use with a bonding tool, the bonding tool being configured to carry a semiconductor element including a plurality of first conductive structures, the bonding tool being configured to bond the semiconductor element to a substrate including a plurality of second conductive structures in conjunction with the bonding operation, wherein the reducing gas delivery system provides a reducing gas to contact each of the plurality of first conductive structures and the plurality of second conductive structures via a manifold integrated with the bonding head assembly.

6. As in request item 1, wherein, Each of the bonding systems includes a bonding head assembly configured for use with a bonding tool configured to carry a semiconductor element including a plurality of first conductive structures, the bonding tool being configured to bond the semiconductor element to a substrate including a plurality of second conductive structures in conjunction with the bonding operation, the substrate including a plurality of second conductive structures, the substrate being supported by a support structure during the bonding operation, wherein a reducing gas delivery system provides a reducing gas to contact each of the plurality of first conductive structures and the plurality of second conductive structures via a manifold integrated with the support structure.

7. As in request item 1, where, The monitoring device includes at least one of the following: (i) a binary gas analyzer, (ii) a Fourier transform infrared spectroscopy (FTIR) gas analyzer, (iii) a mass spectrometer gas analyzer, and (iv) a mass spectrometer combined with a gas chromatograph.

8. As in request item 2, wherein, The reducing gas includes an acidic compound, and step (c) includes monitoring at least a portion of the composition of the gaseous byproducts to determine the concentration of the acidic compound.

9. The method of request item 1 also includes: The step of transferring a reducing gas from a junction region of one of the junction systems to a reduction system of the junction system, wherein the gaseous byproducts include an exhaust gas from the reduction system.

10. As in request item 9, wherein, The transfer step includes: using a vacuum system integrated with a joint assembly of the joint system to transfer the reducing gas from the joint area to the reduction system.

11. As in request item 9, wherein, The transfer step includes: using a vacuum system integrated with a support structure of the bonding system to transfer the reducing gas from the bonding region to the reduction system.

12. The method of request item 1 also includes: The step of operating a machine exhaust system to remove a reducing gas from an operating area of ​​one of the engagement systems, wherein the gaseous byproducts include an exhaust gas from the machine exhaust system.

13. As in request item 1, wherein, The gas delivery path between each of the plurality of bonding systems and the monitoring device includes a valve, such that the monitoring device is configured to selectively monitor the component relative to any of the bonding systems.

14. A monitoring system for monitoring gaseous byproducts of a plurality of combined systems, the monitoring system comprising: A plurality of bonding systems, each bonding system including a reducing gas delivery system for use in combining a bonding operation, each bonding system being configured to discharge gaseous byproducts; a monitoring device for monitoring the composition of at least a portion of the gaseous byproducts; and a plurality of connection structures, each connection structure providing a gas delivery path between a separate bonding system in the plurality of bonding systems and the monitoring device.

15. The monitoring system as described in request item 14, wherein, The reducing gas delivery system is configured to provide a reducing gas comprising a carrier gas and an acid.

16. The monitoring system as described in request item 15, wherein, The acid includes at least one of formic acid and acetic acid.

17. The monitoring system as described in request item 15, wherein, The reducing gas is a saturated vapor gas.

18. The monitoring system as described in request item 14, wherein, Each of the bonding systems includes a bonding head assembly configured for use with a bonding tool, the bonding tool being configured to carry a semiconductor element including a plurality of first conductive structures, the bonding tool being configured to bond the semiconductor element to a substrate including a plurality of second conductive structures in conjunction with the bonding operation, wherein a reducing gas delivery system provides a reducing gas to contact each of the plurality of first conductive structures and the plurality of second conductive structures via a manifold integrated with the bonding head assembly.

19. The monitoring system as described in request item 14, wherein, Each of the bonding systems includes a bonding head assembly configured for use with a bonding tool configured to carry a semiconductor element including a plurality of first conductive structures, the bonding tool being configured to bond the semiconductor element to a substrate including a plurality of second conductive structures in conjunction with the bonding operation, the substrate including a plurality of second conductive structures, the substrate being supported by a support structure during the bonding operation, wherein a reducing gas delivery system provides a reducing gas to contact each of the plurality of first conductive structures and the plurality of second conductive structures via a manifold integrated with the support structure.

20. The monitoring system as described in request item 14, wherein, The monitoring device includes at least one of (i) a binary gas analyzer, (ii) a Fourier transform infrared spectroscopy (FTIR) gas analyzer, (iii) a mass spectrometer gas analyzer, and (iv) a mass spectrometer combined with a gas chromatograph.

21. The monitoring system as described in request item 15, wherein, The reducing gas includes an acidic compound, and the monitoring device is configured to monitor at least a portion of the composition of the gaseous byproducts to determine the concentration of the acidic compound.

22. The monitoring system as described in request item 14, wherein, Each of the bonding systems is configured to transfer a reducing gas from a bonding region of the bonding system to a reduction system of the bonding system, wherein the gaseous byproducts include an exhaust gas from the reduction system.

23. The monitoring system as described in request item 22, wherein, The bonding system is configured to use a vacuum system integrated with a bonding head assembly of the bonding system to transfer the reducing gas from the bonding region to the reduction system.

24. The monitoring system as described in request item 22, wherein, The bonding system is configured to use a vacuum system integrated with a support structure of the bonding system to transfer the reducing gas from the bonding region to the reduction system.

25. The monitoring system as described in request item 14, wherein, Each of the plurality of joining systems includes a machine exhaust system for removing a reducing gas from an operating area of ​​the joining system, the gaseous byproducts including an exhaust gas from the machine exhaust system.

26. The monitoring system as described in request item 14, wherein, Each of the plurality of bonding systems and the monitoring device includes a valve in the respective gas delivery path between the bonding system and the monitoring device, such that the monitoring device is configured to selectively monitor the component with respect to any of the bonding systems.

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