Bonding systems, and methods of providing a reducing gas on a bonding system

Abstract

This invention provides a bonding system. The bonding system includes: (a) a bonding head assembly configured to carry a bonding tool for bonding a semiconductor element to a substrate; and (b) a reducing gas conduit for delivering a reducing gas from (i) a reducing gas source to (ii) a bonding region of the bonding system. The reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding region. The reducing gas conduit includes a catalyst for generating an excess of reduced species in the reducing gas before it reaches the bonding region.

Description

Technical Field

[0001] The present invention relates to a bonding system and process, and more particularly, to a bonding system and a process for providing a reducing gas on the bonding system. Prior Art

[0002] Traditional semiconductor packaging typically involves die attach and wire bonding processes. Advanced semiconductor packaging technologies, such as flip-chip bonding and thermocompression bonding, continue to attract attention in the industry. For example, in thermocompression bonding (TCB), heat and / or pressure (and sometimes ultrasonic energy) are used to form multiple interconnects between (i) conductive structures on a semiconductor device and (ii) conductive structures on a substrate.

[0003] In certain flip-chip or thermocompression bonding applications, the semiconductor device and / or conductive structures of the substrate may include copper structures (e.g., copper pillars) or other materials susceptible to oxidation and / or other contamination. In such applications, a suitable bonding environment is required. Typically, this is achieved by using a reducing gas in the bonding area to reduce potential oxidation and / or contamination of the conductive structures of the semiconductor device or substrate being bonded.

[0004] Therefore, it is desirable to provide improved bonding systems and methods of providing reducing gases to bonding systems. Summary of the Invention

[0005] According to one exemplary embodiment, the present invention provides a bonding system. The bonding system includes: (a) a bonding head assembly configured to carry a bonding tool used to bond a semiconductor component to a substrate; and (b) a reducing gas conduit for transporting a reducing gas from (i) a reducing gas source to (ii) a bonding area of ​​the bonding system. The reducing gas is configured to be used during bonding of the semiconductor component to the substrate at the bonding area. The reducing gas conduit includes a catalyst for generating an excess of reducing species in the reducing gas before the reducing gas reaches the bonding area.

[0006] According to another exemplary embodiment of the present invention, another bonding system is provided. The bonding system includes: (a) a bonding head assembly configured to carry a bonding tool used to bond a semiconductor component to a substrate; and (b) a reducing gas conduit for transporting a reducing gas from (i) a reducing gas source to (ii) a bonding area of ​​the bonding system. The reducing gas is configured to be used during bonding of the semiconductor component to the substrate at the bonding area. The reducing gas conduit includes a noble metal structure configured in at least one of the following: (a) a mesh configuration within the reducing gas conduit; (b) a perforated block configuration within the reducing gas conduit; and (c) a configuration covering an inner surface of the reducing gas conduit.

[0007] According to another exemplary embodiment of the present invention, another bonding system is provided. The bonding system includes: (a) a bonding head assembly configured to carry a bonding tool used to bond a semiconductor component to a substrate; and (b) a reducing gas conduit for transporting a reducing gas from (i) a reducing gas source to (ii) a bonding area of ​​the bonding system. The reducing gas is configured to be used during bonding of the semiconductor component to the substrate at the bonding area. The reducing gas conduit includes a catalyst configured in at least one of the following: (a) a mesh configuration within the reducing gas conduit; (b) a perforated block configuration within the reducing gas conduit; and (c) a configuration covering an inner surface of the reducing gas conduit.

[0008] According to another exemplary embodiment of the present invention, a method for providing a reducing gas in a bonding system is provided. The method includes the following steps: (a) providing a bonding tool for bonding a semiconductor component to a substrate; (b) conveying a reducing gas in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein the reducing gas is configured to be used during bonding of the semiconductor component to the substrate at the bonding region; and (c) using a catalyst to generate an excess of reducing species in the reducing gas while the reducing gas is conveyed in the reducing gas conduit.

[0009] According to another exemplary embodiment of the present invention, another method for providing a reducing gas in a bonding system is provided. The method includes the following steps: (a) providing a bonding tool for bonding a semiconductor element to a substrate; (b) conveying a reducing gas in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein the reducing gas is configured to be used when bonding the semiconductor element to the substrate in the bonding region; and (c) generating an excess of reducing species in the reducing gas using a noble metal structure while the reducing gas is conveyed in the reducing gas conduit, the noble metal structure being configured as at least one of: (i) a mesh configuration within the reducing gas conduit; (ii) a perforated block configuration within the reducing gas conduit; and (iii) a configuration covering an inner surface of the reducing gas conduit.

[0010] According to another exemplary embodiment of the present invention, another method for providing a reducing gas in a bonding system is provided. The method includes the following steps: (a) providing a bonding tool for bonding a semiconductor element to a substrate; (b) conveying a reducing gas in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein the reducing gas is configured to be used during bonding of the semiconductor element to the substrate at the bonding region; and (c) generating an excess reducing species in the reducing gas using a catalyst while the reducing gas is conveyed in the reducing gas conduit, the catalyst being configured as at least one of: (i) a mesh configuration within the reducing gas conduit; (ii) a perforated block configuration within the reducing gas conduit; and (iii) a configuration covering an inner surface of the reducing gas conduit.

[0011] The method of the present invention may also be embodied as an apparatus (e.g., as part of the intelligence of a wire bonding machine) or as computer program instructions on a computer readable carrier (e.g., a computer readable carrier containing a wire format for use in connection with a wire bonding machine). Simple diagram description

[0012] The following detailed description of the present invention is best understood when read in conjunction with the accompanying drawings. It should be emphasized that, in accordance with common practice, the various features in the drawings are not shown to scale. Rather, the dimensions of the various features in the drawings are arbitrarily expanded or reduced to improve clarity. The drawings include the following figures: Figures 1 to 4 are block side views showing a bonding system configured to provide a reducing gas to the bonding area according to various exemplary embodiments of the present invention; Figures 5A-5B and 6A-6B show block side views of a bonding system configured to provide a reducing gas to the bonding region and the substrate oxide reduction chamber according to various exemplary embodiments of the present invention; 7A to 7B are partial cross-sectional side views of a reducing gas conduit according to various exemplary embodiments of the present invention, showing the catalyst range; 7C to 7E are cross-sectional views taken along line AA of FIG. 7A , showing exemplary catalyst configurations according to various exemplary embodiments of the present invention; 8 is a cross-sectional side view of a portion of a reducing gas conduit in a serpentine configuration showing a catalyst range according to an exemplary embodiment of the present invention; and 9 to 11 are respective flow charts of methods of providing a reducing gas on a bonding system according to various exemplary embodiments of the present invention. Implementation Method

[0013] According to exemplary aspects of the present invention, a reducing gas (e.g., formic acid vapor) helps reduce oxides from conductive structures of a semiconductor device and a substrate to be bonded to a semiconductor material. Examples of such conductive structures include conductive pads, conductive leads, conductive traces, and conductive pillars. Examples of materials used in the conductive structures include copper, solder, silver-tin solder, indium-based solder, and the like.

[0014] By using a reducing gas, oxides from conductive structures can be reduced to intermediate metal formate species, which are then thermally decomposed into metal and other gaseous species. During solder-to-solder, solder-to-metal, and metal-to-metal interconnect bonding (e.g., thermocompression bonding), this process typically requires high temperatures (e.g., 200°C to 300°C) to reduce the oxides.

[0015] According to certain exemplary embodiments of the present invention, the high temperature requirement for reducing oxides from the surfaces of conductive structures can be reduced. For example, the exemplary method utilizes a reaction of a reducing gas (e.g., formic acid vapor) with a catalyst such as a noble metal (e.g., platinum, palladium, gold, etc.). Furthermore, this reaction can occur at elevated temperatures (e.g., 100°C to 200°C). Consequently, due to the catalytic conversion, excess reducing species (e.g., H+ ions) are generated in the reducing gas. These excess reducing species help further reduce oxides on the target surface (e.g., the surface of the conductive structure of a semiconductor component and / or the surface of a substrate to which the semiconductor component will be bonded). The presence of these excess (additional) reducing species further reduces the temperature requirement during the bonding process (e.g., bonding the semiconductor component to the substrate).

[0016] An exemplary bonding system according to the present invention may include one or more of the following: a reducing gas conduit for conveying reducing gas; a heater (e.g., an inline heater) for heating at least a portion of the reducing gas conduit (e.g., the catalyst area of ​​the reducing gas conduit); and a catalyst (e.g., a precious metal structure such as a mesh, a perforated block, or a covering such as a plating or coating) disposed in the reducing gas conduit. The temperature of the catalyst can be adjusted, for example, using closed-loop control.

[0017] Each of U.S. Patent No. 10,861,820 (entitled "Method for bonding a semiconductor device to a substrate, including the use of a reducing gas and a related bonding machine"), U.S. Patent No. 11,205,633 (entitled "Method for bonding a semiconductor device to a substrate and a related bonding system"), and U.S. Patent Application No. 2021 / 0265303 (entitled "Method for bonding a semiconductor device to a substrate and a related bonding system") relates to a bonding system using a reducing gas, and the present invention cites the entire text of the above and incorporates it into the present invention.

[0018] As used herein, the term "semiconductor device" refers to any structure that includes (or is configured to include in a subsequent step) a semiconductor chip or die. Exemplary semiconductor devices include: a bare semiconductor die, a semiconductor die on a substrate (e.g., a lead frame, a PCB, a carrier, a semiconductor die, a semiconductor wafer, a BGA substrate, a semiconductor device, etc.), a packaged semiconductor device, a flip-chip semiconductor device, a die embedded in a substrate, a stack of semiconductor dies, and the like. Furthermore, a semiconductor device may include a device configured to be bonded or otherwise included in a semiconductor package (e.g., a spacer, a substrate, etc. to be bonded in a stacked die configuration).

[0019] As used herein, the term "substrate" refers to any structure to which a semiconductor device may be attached. Exemplary substrates include, for example, a lead frame, a PCB, a carrier, a module, a semiconductor die, a semiconductor wafer, a BGA substrate, another semiconductor device, and the like.

[0020] As used herein, the term "catalyst" refers to a structure used to generate excess reducing species in a reducing gas, for example, within a heated reducing gas conduit. Such catalysts may be noble metal structures formed from (or containing) ruthenium (Ru), rhodium (Rh), palladium (Pd), iridium (Ir), platinum (Pt), and gold (Au). Additionally, depending on the specific application, the catalyst may be formed from (or contain) nickel, copper, silver, or other suitable materials.

[0021] As used herein, the term "catalyst range" refers to a portion of a reducing gas conduit (which is any type of tube, pipe, or structure that contains the reducing gas) that contains the catalyst. The catalyst range may extend along any portion of the length of the reducing gas conduit as required by the application.

[0022] As understood by those skilled in the art, a reducing gas (e.g., formic acid vapor) contains reducing species. By reacting with a catalyst (e.g., with heat), additional reducing species (also referred to as excess reducing species) are generated in the reducing gas. H+ ions are an example of such additional reducing species.

[0023] Referring now to the drawings, FIG1 illustrates a bonding system 100 (e.g., a flip chip bonder, a thermocompression bonder, etc.). Bonding system 100 includes a support structure 102 for supporting a substrate 104 (wherein substrate 104 includes a plurality of conductive structures 104a) during a bonding operation. Support structure 102 can include any suitable structure for a particular application. In the illustrated embodiment, support structure 102 includes a top plate 102a (configured to directly support substrate 104), a chuck 102c, and a heater 102b disposed therebetween.

[0024] Bonding system 100 further includes a bond head assembly 106, which can be configured to move along (and around) a plurality of axes of bonding system 100, such as an x-axis, a y-axis, a z-axis, a theta-axis (a rotational axis), and the like. Bond head assembly 106 includes and / or carries a heater 108 and a bonding tool 110. In certain bonding machines (e.g., thermocompression bonding machines), it may be necessary to heat bonding tool 110. While FIG1 illustrates a separate heater 108 for heating bonding tool 110 (for heating semiconductor device 112 including a plurality of conductive structures 112a), it should be understood that heater 108 and bonding tool 110 may be integrated into a single component (e.g., a heated bonding tool).

[0025] In conjunction with a bonding operation, a semiconductor device 112 is bonded to a substrate 104 using a bonding tool 110. During the bonding operation, corresponding ones of the conductive structures 112a are bonded (e.g., using heat, force, ultrasonic energy, etc.) to respective ones of the conductive structures 104a. In FIG1 , the conductive structures 112a include solder material 112a1 at a contact portion of each conductive structure 112a (e.g., a portion of the conductive structure 104a configured to contact the substrate 104).

[0026] In certain bonding applications (e.g., thermocompression bonding, flip-chip bonding, etc.), it is desirable to provide a suitable bonding environment. Typically, this is achieved by using a reducing gas in the bonding area to reduce potential oxides on the conductive structures or substrates of the semiconductor devices being bonded.

[0027] In FIG1 , bond head assembly 106 carries bond head manifold 114, which is used to receive and distribute fluids (e.g., gas, vapor, liquid, etc.) as required for a given application. Although bond head manifold 114 is shown in cross-section, in practice, bond head manifold 114 surrounds bonding tool 110 (e.g., bond head manifold 114 surrounds bonding tool 110 in a coaxial configuration). Of course, bond head manifold 114 can have a configuration different from that shown in FIG1 . Furthermore, it should be understood that certain details of bond head manifold 114 have been omitted for simplicity.

[0028] Bond head manifold 114 includes three channels (channel 114a, channel 114b, and channel 114c) with different functions. External channel 114a receives shielding gas (e.g., nitrogen) from a shielding gas supply source (not shown). Shielding gas 128 is provided from external channel 114a of bond head manifold 114 to protect bonding area 122 from the external environment. Internal channel 114c receives reducing gas 130 (e.g., reducing gas 130 may be saturated vapor, such as formic acid vapor, or may contain an excess of reducing species) via reducing gas conduit 120 and supplies reducing gas 130 to bonding area 122 (e.g., where bonding area 122 is where semiconductor device 112 is bonded to substrate 104).

[0029] The reducing gas 130 is provided by a reducing gas source 118 (via a reducing gas conduit 120). For example, the reducing gas source 118 can be a bubbler-type system containing an acidic fluid such as formic acid, acetic acid, or another acidic fluid (wherein the bubbler-type system can be part of the joint system 100). In another example, the reducing gas source 118 can be a container (e.g., a pressurized container such as a tank) or another source for directing the reducing gas 130 to the joint system 100.

[0030] Reducing gas conduit 120 is configured to transport reducing gas 130 from reducing gas source 118 to bonding area 122 of bonding system 100, wherein reducing gas 130 is configured to be used during bonding of semiconductor component 112 to substrate 104 at bonding area 122. In the embodiment shown in FIG1 , reducing gas conduit 120 is configured to provide reducing gas 130 to bond head assembly 106 and / or bond head manifold 114. Reducing gas conduit 120 includes a catalyst (e.g., wherein the catalyst is formed of or included in at least one noble metal (e.g., platinum, palladium, gold, etc.)) for generating excess reducing species (e.g., H+ ions) in reducing gas 130 before it reaches bonding area 122. The catalyst can be provided in a variety of different configurations (e.g., in a mesh configuration 120b1 as shown in FIG7C , in a perforated block configuration 120b2 as shown in FIG7D , on an inner surface of the reducing gas conduit as shown in FIG7E , etc.). The reducing gas 130 is delivered through the catalyst range 120a of the reducing gas conduit 120 (i.e., where the catalyst is located), thereby chemically reacting with the catalyst to produce excess reducing species. A heater (e.g., an in-line heater) may be used in conjunction with the reducing gas conduit 120, and more specifically, in conjunction with the catalyst range 120a (e.g., see Figures 7A-7B and 8).

[0031] After reducing gas 130 is distributed throughout bonding region 122, reducing gas 130 contacts the surface of each of conductive structure 104a (of substrate 104) and conductive structure 112a (of semiconductor element 112). The surfaces of conductive structures 104a / 112a may then contain reaction products (e.g., where the reaction products are provided by (i) surface oxides on conductive structures 104a / 112a and (ii) reducing gas 130 and, if desired, may be heated by heater 108 and transferred to conductive structure 104a via contact with conductive structure 112a). These reaction products are desirably removed from bonding region 122 using a vacuum supplied from central channel 114b of bond head manifold 114 via outlet tube 116.

[0032] Referring now to FIG. 2 , a bonding system 200 is shown. Bonding system 200 is similar in many respects to bonding system 100 , with similar components having the same component numbers or numbers beginning with "2" rather than "1" (unless otherwise explicitly stated). Bonding system 200 includes a support structure 202 for supporting substrate 104. Support structure 202 includes a top plate 202a (configured to directly support substrate 104), a chuck 202c, and a heater 202b disposed therebetween.

[0033] Bonding system 200 further includes a bond head assembly 106, which can be configured to move along (and around) a plurality of axes of bonding system 200, such as an x-axis, a y-axis, a z-axis, a theta-axis (a rotational axis), and the like. Bond head assembly 106 includes and / or carries a heater 108 and a bonding tool 110. Bonding tool 110 is shown carrying a semiconductor component 112 (including a plurality of conductive structures 112a, conductive structures 112a including solder material 112a1). Bond head assembly 106 is shown carrying a plate 107, which is configured to partially receive at least one of a shielding gas 128 and a reducing gas 130.

[0034] In contrast to the bond head manifold 114 carried by the bond head assembly 106 (as shown in FIG. 1 ), FIG. 2 shows a manifold 214 carried by and / or integrated with the support structure 202 . Manifold 214 is configured to receive and distribute fluids (e.g., gases, steam, etc.) as required in a given application. Although shown in cross-section, manifold 214 actually at least partially surrounds substrate 104 . Of course, manifold 214 can have a configuration different from that shown in FIG. 2 . Furthermore, it should be understood that certain details of manifold 214 have been omitted for simplicity (e.g., details of the interconnection of reducing gas conduits 120, details of the structure for distributing reducing gas 130 within manifold 214 , details of the structure for distributing shielding gas 128 within manifold 214 , details of the structure for drawing a vacuum through central passage 214 b of manifold 214 , etc.).

[0035] Manifold 214 includes three channels (channel 214a, channel 214b, and channel 214c) with different functions. External channel 214a receives shielding gas 128 (e.g., nitrogen) from a shielding gas supply source (e.g., a nitrogen tank, gas supply, etc.). Shielding gas 128 is provided from external channel 214a of manifold 214 to protect bonding area 222 from the external environment. Internal channel 214c receives reducing gas 130 via reducing gas conduit 120 and supplies reducing gas 130 to bonding area 222 in conjunction with the bonding operation. Reducing gas 130 is provided by reducing gas source 118 and delivered by reducing gas conduit 120.

[0036] The reducing gas conduit 120 is configured to transport reducing gas 130 from the reducing gas source 118 to the bonding area 222 of the bonding system 200, wherein the reducing gas 130 is configured to be used during bonding of the semiconductor component 112 to the substrate 104 at the bonding area 222. In the embodiment shown in FIG2 , the reducing gas conduit 120 is configured to provide the reducing gas 130 to the support structure 202 (e.g., via the manifold 214). The reducing gas conduit 120 contains a catalyst (e.g., wherein the catalyst is formed of or contained within at least one noble metal (e.g., platinum, palladium, gold, etc.)) for generating an excess of reducing species (e.g., H+ ions) in the reducing gas 130 before the reducing gas 130 reaches the bonding area 222. The catalyst can be provided in a variety of different configurations (e.g., in a mesh configuration 120b1 as shown in FIG7C , in a perforated block configuration 120b2 as shown in FIG7D , on the inner surface of the reducing gas conduit as shown in FIG7E , etc.). The reducing gas 130 is delivered through the catalyst range 120a of the reducing gas conduit 120 (i.e., where the catalyst is located), thereby chemically reacting with the catalyst to produce excess reducing species. A heater (e.g., an in-line heater) may be used in conjunction with the reducing gas conduit 120, and more specifically, in conjunction with the catalyst range 120a (e.g., see Figures 7A-7B and 8).

[0037] After the reducing gas 130 is distributed throughout the regions of the semiconductor element 112 and the substrate 104, the reducing gas 130 contacts the surfaces of each of the conductive structures 104a and 112a. The surfaces of the conductive structures 104a / 112a may then contain reaction products (e.g., reaction products provided by: (i) surface oxides on the conductive structures 104a / 112a, and (ii) the reducing gas from the reducing gas 130, which may be heated by the heater 108, if desired). These reaction products are desirably removed from the bonding region using a vacuum applied through the central passage 214b of the manifold 214 via the outlet tube 216 (i.e., the bonding region where the conductive structures 112a of the semiconductor element 112 are bonded to the corresponding conductive structures 104a of the substrate 104).

[0038] Referring now to FIG. 3 , bonding system 300 is shown. Bonding system 300 is similar in many respects to bonding system 100 of FIG. 1 , with similar components having the same component numbers or numbers beginning with "3" instead of "1" (unless otherwise explicitly stated). Bonding system 300 includes a substrate source 300a (e.g., a wafer handler or other source) that positions substrate 104 (e.g., a wafer, printed circuit board, etc.) on a support structure 300a1, and a processing system 300b. Substrate 104 is configured to be transferred to processing system 300b (e.g., including an internal environmental chamber 320, including tunnel 302). Tunnel 302 includes a substrate oxidation prevention chamber 302b and a bonding station 302c (which is part of substrate oxidation prevention chamber 302b). Processing system 300b also includes a reducing gas delivery system 308 (including bond head manifold 114, as described herein). Within the processing system 300 b (sometimes referred to as the main machine compartment), an internal environmental chamber 320 may contain at least a portion of the substrate oxide prevention chamber 302 b and the reducing gas delivery system 308 .

[0039] Bonding system 300 also includes bond head assembly 106, which contains and / or carries heater 108 and bonding tool 110. Details of exemplary bond head assembly 106 are described in conjunction with FIG1 . FIG3 also shows main exhaust 304, which extracts exhaust (e.g., gas such as reducing gas vapor) from processing system 300b or internal environmental chamber 320 via conduit 304a and conduit 114b1 (where conduit 114b1 is directly or indirectly coupled to central channel 114b depicted in FIG1 ). Bond head assembly 106 includes bond head manifold 114, which is used to receive and distribute fluids (e.g., gas, vapor, etc.) as required for a given application. Bond head manifold 114 receives reducing gas 130 from reducing gas source 118 via reducing gas conduit 120.

[0040] In the example shown in FIG3 , tunnel 302 includes an entry door 302a1 (which closes opening 302a1a). A substrate transport system (which may be part of a material handling system, including support structure 102) is used to transport substrates 104 through entry door 302a1 to substrate oxidation prevention chamber 302b. Substrate oxidation prevention chamber 302b includes an inert environment 306 (e.g., supplied by nitrogen, not shown for simplicity). The material handling system is used to move substrates 104 within substrate oxidation prevention chamber 302b to bonding position 302c. At bonding position 302c, reducing gas 130 is provided by reducing gas delivery system 308. Reducing gas 130 is provided by reducing gas source 118 and delivered by reducing gas conduit 120.

[0041] Reducing gas conduit 120 is configured to transport reducing gas 130 from reducing gas source 118 to a bonding area (e.g., including bonding position 302c) of bonding system 300, wherein reducing gas 130 is configured to be used during bonding of semiconductor component 112 to substrate 104 at the bonding area. In the embodiment shown in FIG3 , reducing gas conduit 120 is configured to provide reducing gas 130 to bond head assembly 106 and / or bond head manifold 114. Reducing gas conduit 120 includes a catalyst (e.g., wherein the catalyst is formed of or included in at least one noble metal (e.g., platinum, palladium, gold, etc.)) for generating an excess of reducing species (e.g., H+ ions) in reducing gas 130 before the reducing gas 130 reaches the bonding area. The catalyst can be provided in a variety of different configurations (e.g., in a mesh configuration 120b1 as shown in FIG7C , in a perforated block configuration 120b2 as shown in FIG7D , on an inner surface of the reducing gas conduit as shown in FIG7E , etc.). The reducing gas 130 is delivered through the catalyst range 120a of the reducing gas conduit 120 (i.e., where the catalyst is located), thereby chemically reacting with the catalyst to produce excess reducing species. A heater (e.g., an in-line heater) may be used in conjunction with the reducing gas conduit 120, and more specifically, in conjunction with the catalyst range 120a (e.g., see Figures 7A-7B and 8).

[0042] In conjunction with a bonding operation, semiconductor component 112 (carried by bond head assembly 106 through opening 302e into tunnel 302) is bonded to substrate 104 using bonding tool 110. During the bonding operation, corresponding ones of the conductive structures of semiconductor component 112 are bonded (e.g., using heat, force, ultrasonic energy, etc.) to respective ones of the conductive structures of substrate 104. Bond head manifold 114 provides reducing gas 130 (e.g., reducing gas may be a saturated vapor gas, such as formic acid vapor) in the region of semiconductor component 112 and substrate 104 in conjunction with the bonding operation (in the illustrated example, reducing gas 130 is able to enter tunnel 302 through opening 302e). After reducing gas 130 is distributed in the region of semiconductor component 112 and substrate 104, reducing gas 130 contacts surfaces of each of the conductive structures of semiconductor component 112 and substrate 104.

[0043] Referring now to FIG. 4 , a bonding system 400 is shown. Bonding system 400 is similar in many respects to bonding system 200 of FIG. 2 and bonding system 300 of FIG. 3 , with similar components having the same component numbers or numbers beginning with "4" rather than "1," "2," or "3" (unless otherwise explicitly stated). Bonding system 400 is essentially bonding system 300 , but with manifold 214 (and associated structure) of FIG. 2 replacing bond head manifold 114 (and associated structure) of FIG. 1 .

[0044] Bonding system 400 includes a substrate source 400a (e.g., a wafer handler or other source) that positions a substrate 104 (e.g., a wafer, printed circuit board, etc.) on a support structure 400a1, and a processing system 400b. Substrate 104 is configured to be transferred to processing system 400b (e.g., including an internal environmental chamber 420 and tunnel 402). Tunnel 402 includes a substrate oxidation prevention chamber 402b and a bonding station 402c (which is a portion of substrate oxidation prevention chamber 402b). Within processing system 400b (sometimes referred to as a main machine compartment), internal environmental chamber 420 may include at least a portion of substrate oxidation prevention chamber 402b and a reducing gas delivery system 408. Bonding system 400 also includes bond head assembly 106, which includes and / or carries heater 108 and bonding tool 110. In conjunction with the bonding operation, semiconductor device 112 (carried by bonding tool 110) extends through opening 402e and is bonded to substrate 104.

[0045] In the example shown in FIG4 , tunnel 402 includes an entry door 402a1 (which closes opening 402a1a). A substrate transfer system (which may be part of a material handling system including support structure 102) is used to transfer substrates 104 through entry door 402a1 to substrate oxidation prevention chamber 402b. Substrate oxidation prevention chamber 402b includes an inert environment 406 (e.g., supplied by nitrogen, not shown for simplicity). The material handling system is used to move substrates 104 within substrate oxidation prevention chamber 402b to a bonding position 402c.

[0046] Bonding system 400 includes a main exhaust section 404 that extracts exhaust gases (e.g., gases such as reducing gas vapor) through conduits 404a and 404b. Processing system 400b is similar to processing system 300b, except that processing system 400b includes a reducing gas delivery system 408 (including manifold 214) in place of reducing gas delivery system 308 (including bond head manifold 114). Manifold 214 is configured to receive and distribute fluids (e.g., gases, vapors, etc.) as needed for a given application. Manifold 214 receives reducing gas 130 from reducing gas source 118 via reducing gas conduit 120.

[0047] The reducing gas conduit 120 is configured to transport reducing gas 130 from the reducing gas source 118 to a bonding area (e.g., including bonding location 402c) of the bonding system 400, wherein the reducing gas 130 is configured to be used during bonding of the semiconductor component 112 to the substrate 104 at the bonding area. In the embodiment shown in FIG4 , the reducing gas conduit 120 is configured to provide the reducing gas 130 to the support structure 102 (e.g., via the manifold 214 of the reducing gas delivery system 408). The reducing gas conduit 120 includes a catalyst (e.g., wherein the catalyst is formed of or included in at least one noble metal (e.g., platinum, palladium, gold, etc.)) for generating an excess of reducing species (e.g., H+ ions) in the reducing gas 130 before the reducing gas 130 reaches the bonding area. The catalyst can be provided in a variety of different configurations (e.g., in a mesh configuration 120b1 as shown in FIG7C , in a perforated block configuration 120b2 as shown in FIG7D , on an inner surface of the reducing gas conduit as shown in FIG7E , etc.). The reducing gas 130 is delivered through the catalyst range 120a of the reducing gas conduit 120 (i.e., where the catalyst is located), thereby chemically reacting with the catalyst to produce excess reducing species. A heater (e.g., an in-line heater) may be used in conjunction with the reducing gas conduit 120, and more specifically, in conjunction with the catalyst range 120a (e.g., see Figures 7A-7B and 8).

[0048] Referring now to FIG. 5A , bonding system 500 is shown. Bonding system 500 includes a substrate source 500a (e.g., a wafer handler or other source) that positions substrate 104 (e.g., a wafer, printed circuit board, etc.) on a support structure 500a1, and a processing system 500b. Substrate 104 is configured to be transferred to processing system 500b (e.g., including tunnel 502). Tunnel 502 includes a substrate oxide reduction chamber 502a, a substrate oxide prevention chamber 502b, and a bonding station 502c (which is part of substrate oxide prevention chamber 502b). Processing system 500b also includes a reducing gas delivery system 508 (including bond head manifold 114, as described herein).

[0049] In the example shown in FIG5A , at least a portion of the substrate oxide reduction chamber 502a shares a common boundary with the substrate oxide prevention chamber 502b. The substrate oxide reduction chamber 502a is closed using an entrance door 502a1 (which closes the opening 502a1a) and an exit door 502a2 (which closes the opening 502a2a). Another reducing gas delivery system 502d provides reducing gas 130 (e.g., formic acid vapor) to the substrate oxide reduction chamber 502a. In the example shown in FIG5A , the reducing gas delivery system 508 and the reducing gas delivery system 502d receive reducing gas from the reducing gas source 118.

[0050] After processing in substrate oxide reduction chamber 502a (e.g., removing oxide from the conductive structures of substrate 104), a substrate transfer system (which may be part of a material handling system including support structure 102) is used to transfer substrate 104 through exit door 502a2 to substrate oxide prevention chamber 502b. Substrate oxide prevention chamber 502b includes an inert environment 506 (e.g., provided by a nitrogen gas supply, not shown for simplicity). The material handling system (e.g., including support structure 102) is used to move substrate 104 within substrate oxide reduction chamber 502b to a bonding position 502c. At bonding position 502c, reducing gas 130 is provided by a reducing gas delivery system 508.

[0051] Bonding system 500 also includes bond head assembly 106, which includes and / or carries heater 108 and bonding tool 110 (see FIG. 1 for a more detailed description of bond head assembly 106). FIG. 3 also shows that bonding system 400 includes a main exhaust 504, which extracts exhaust gas (e.g., a gas such as reducing gas vapor) via conduit 504a and conduit 114b1 (where conduit 114b1 is directly or indirectly coupled to central channel 114b depicted in FIG. 1). Bond head assembly 106 carries a bond head manifold 114, which is used to receive and distribute fluids (e.g., gas, steam, etc.) as needed for a given application.

[0052] The reducing gas conduit 120 is configured to deliver reducing gas 130 from the reducing gas source 118 to (i) the reducing gas delivery system 508 (and / or the bond head manifold 114) and (ii) the reducing gas delivery system 502d. Thus, the reducing gas conduit 120 delivers the reducing gas 130 from the reducing gas source 118 to the bonding area (e.g., including the bonding position 502c) via the reducing gas delivery system 508. The reducing gas 130 is configured for use during bonding (e.g., thermocompression bonding, flip chip bonding, etc.) of the semiconductor component 112 to the substrate 104. In the embodiment shown in FIG. 5A (and FIG. 5B ), the reducing gas conduit 120 is also configured to deliver the reducing gas 130 to the substrate oxide reduction chamber 502a via the reducing gas delivery system 502d. The substrate oxide reduction chamber 502a is configured to receive the substrate 104 prior to bonding the semiconductor component 112 to the substrate 104.

[0053] The reducing gas conduit 120 contains a catalyst (e.g., wherein the catalyst is formed of or contains at least one precious metal (e.g., platinum, palladium, gold, etc.)) for generating excess reducing species in the reducing gas 130 before the reducing gas 130 reaches the engagement position 502c. The reducing gas 130 is transported through the catalyst region 120a of the reducing gas conduit 120 (i.e., where the catalyst is located), thereby chemically reacting with the catalyst to generate excess reducing species. A heater can be used in conjunction with the reducing gas conduit 120, and more specifically, in conjunction with the catalyst region 120a (e.g., see Figures 7A-7B and 8). The heat provided by the heater can enhance the chemical reaction that generates the excess reducing species.

[0054] In conjunction with a bonding operation, semiconductor component 112 (which is transported by bond head assembly 106 through opening 502e and into tunnel 502) is bonded to substrate 104 using bonding tool 110. During the bonding operation, corresponding ones of the conductive structures of semiconductor component 112 are bonded (e.g., using heat, force, ultrasonic energy, etc.) to respective ones of the conductive structures of substrate 104. Bond head manifold 114 provides reducing gas 130 (e.g., a saturated vapor gas) in the region of semiconductor component 112 and substrate 104 in conjunction with the bonding operation (in the illustrated example, reducing gas 130 is able to enter tunnel 502 through opening 502e). After reducing gas 130 is distributed in the region of semiconductor component 112 and substrate 104, reducing gas 130 contacts surfaces of each of the conductive structures of semiconductor component 112 and substrate 104.

[0055] FIG5B shows a junction system 500′. Junction system 500′ is identical to junction system 500, except that junction system 500 shows multiple branches of a reducing gas conduit 120 (including a plurality of catalyst areas 120a) extending from a reducing gas source 118, whereas junction system 500′ shows a single reducing gas conduit 120 (including a single catalyst area 120a) extending from the reducing gas source 118 and then branching into two portions of the reducing gas conduit 120 (i.e., one branch of the reducing gas conduit 120 extends to the substrate oxide reduction chamber 502a, while the other branch of the reducing gas conduit 120 connects to the manifold 214). Therefore, while being delivered from the reducing gas source 118, the reducing gas 130 passes through the single catalyst area 120a in junction system 500′ and through the plurality of catalyst areas 120a in junction system 500.

[0056] Referring now to FIG. 6A , bonding system 600 is shown. Bonding system 600 is similar in many respects to bonding system 500 of FIG. 5A and bonding system 200 of FIG. 2 , with similar components having the same component numbers or numbers beginning with "6" rather than "5," "2," or "1" (unless otherwise explicitly stated). Bonding system 600 is essentially bonding system 500, except that processing system 600b includes a reducing gas delivery system 608 (including manifold 214 and associated structures) in place of reducing gas delivery system 508 (including bond head manifold 114 and associated structures) of processing system 500b. Bonding system 600 includes a substrate source 600a (e.g., a wafer handler or other source) that positions a substrate 104 (e.g., a wafer, printed circuit board, etc.) on a support structure 600a1. Substrate 104 is configured to be transferred to processing system 600b (e.g., including channel 602). The channel 602 (or other structure, as required) includes: a substrate oxide reduction chamber 602a; a substrate oxide prevention chamber 602b; and a bonding position 602c (which is a part of the substrate oxide prevention chamber 602b).

[0057] In the example shown in FIG6A , at least a portion of substrate oxide reduction chamber 602a shares a common boundary with substrate oxide prevention chamber 602b. Processing system 600b also includes a reducing gas delivery system 608. Substrate oxide reduction chamber 602a is closed using an entry door 602a1 (which closes opening 602a1a) and an exit door 602a2 (which closes opening 602a2a). Another reducing gas delivery system 602d (shown as indirectly interconnected with reducing gas delivery system 608 to utilize a common reducing gas source, namely, reducing gas source 118) provides reducing gas 130 (e.g., formic acid vapor) within substrate oxide reduction chamber 602a. After processing in substrate oxide reduction chamber 602a (e.g., removing oxide from conductive structures of substrate 104), a substrate transfer system (which may be part of a material handling system including support structure 102) is used to transfer substrate 104 through opening 602a2a to substrate oxide prevention chamber 602b. The substrate oxidation prevention chamber 602b includes an inert environment 606 (e.g., supplied by nitrogen, not shown for simplicity). A material handling system (e.g., including the support structure 102) is used to move the substrate 104 within the substrate oxidation prevention chamber 602b to the bonding position 602c. At the bonding position 602c, the reducing gas 130 is provided by a reducing gas delivery system 608.

[0058] FIG6A also shows bond head assembly 106, which includes and / or carries heater 108 and bonding tool 110 (see detailed description in conjunction with FIG1 ). In conjunction with the bonding operation, bonding tool 110 is capable of transporting semiconductor component 112 through opening 602e. FIG6A also shows that bonding system 400 includes a main exhaust 604, which extracts exhaust gases (e.g., gases such as reducing gas vapor) through conduits 604a and 604b. Manifold 214 is configured to receive and distribute fluids (e.g., gases, steam, etc.) as needed for a given application.

[0059] The reducing gas conduit 120 is configured to transport reducing gas 130 from the reducing gas source 118 to the reducing gas delivery system 608 and then to a bonding area (e.g., including bonding location 602c), wherein the reducing gas 130 is configured to be used during bonding (e.g., thermocompression bonding, flip chip bonding, etc.) of the semiconductor component 112 to the substrate 104. In the embodiment shown in FIG6A (and FIG6B ), the reducing gas conduit 120 is configured to transport the reducing gas 130 to a substrate oxide reduction chamber 602a (which is configured to receive the substrate 104) before bonding the semiconductor component 112 to the substrate 104. Furthermore, the reducing gas conduit 120 is configured to transport the reducing gas 130 to the support structure 102 (e.g., via the manifold 214). The reducing gas conduit 120 contains a catalyst (e.g., wherein the catalyst is formed of or contained within at least one noble metal (e.g., platinum, palladium, gold, etc.)) for generating excess reducing species in the reducing gas 130 before the reducing gas 130 reaches the bonding location 602c. The reducing gas 130 is transported through the catalyst region 120a of the reducing gas conduit 120 (i.e., where the catalyst is located), where it chemically reacts with the catalyst to produce excess reducing species. A heater can be used in conjunction with the reducing gas conduit 120, and more specifically, in conjunction with the catalyst region 120a (e.g., see Figures 7A-7B and 8). The heat provided by the heater can enhance the chemical reaction that produces the excess reducing species.

[0060] FIG6B shows a joint system 600′. Joint system 600′ is identical to joint system 600, except that whereas joint system 600 shows multiple branches of a reducing gas conduit 120 (including a plurality of catalyst areas 120a) extending from a reducing gas source 118, joint system 600′ shows a single reducing gas conduit 120 (including a single catalyst area 120a) extending from the reducing gas source 118 and then branching into two portions of the reducing gas conduit 120 (i.e., one branch of the reducing gas conduit 120 extends to the substrate oxide reduction chamber 602a, while the other branch of the reducing gas conduit 120 connects to the manifold 214). Therefore, while being delivered from the reducing gas source 118, the reducing gas 130 passes through the single catalyst area 120a in joint system 600′ and through the plurality of catalyst areas 120a in joint system 600.

[0061] Referring now to FIG. 7A , a cross-section of a portion of an exemplary reducing gas conduit 120 is shown (e.g., the reducing gas conduit 120 shown in FIG. 7A-7B and FIG. 8 and the catalyst configurations shown in FIG. 7C-7E are examples of the reducing gas conduit 120 illustrated and described throughout this application). The reducing gas conduit 120 includes a catalyst range 120a1 (which may extend along any portion of the reducing gas conduit 120 as desired in a particular application). The catalyst range 120a1 includes a catalyst 120b. The catalyst 120b is contained within the reducing gas conduit 120 and can be constructed in a variety of different configurations (e.g., see the mesh configuration 120b1 in FIG. 7C , the perforated block configuration 120b2 in FIG. 7D , and the inner surface configuration 120b3 in FIG. 7E , among others). The reducing gas conduit 120 also includes a heater 120c. The heater 120c is shown in a block diagram and is connected to the reducing gas conduit 120, and more specifically, to the catalyst range 120a1. 7A , heater 120 c is configured to heat catalyst 120 b to a temperature that facilitates the production of excess reducing species in the reducing gas (e.g., 100° C., 150° C., 200° C.). Heater 120 c can be used to control the temperature, for example, using closed-loop control (e.g., simultaneously measuring the temperature to control the heating).

[0062] Referring now to FIG. 7B , a cross-section of a portion of another exemplary reducing gas conduit 120 is shown. Reducing gas conduit 120 includes a catalyst area 120a2. Catalyst area 120a2 contains catalyst 120b. Catalyst 120b is contained within reducing gas conduit 120 and can be constructed in a variety of different configurations (e.g., see mesh configuration 120b1 in FIG. 7C , perforated block configuration 120b2 in FIG. 7D , and inner surface configuration 120b3 in FIG. 7E ). Reducing gas conduit 120 also includes a heater 120d (or multiple heaters). Compared to heater 120c in FIG. 7A , heater 120d is shown as an in-line heater connected to catalyst area 120a2. In FIG. 7B , heater 120d is configured to heat catalyst 120b to a temperature that facilitates the production of excess reducing species in the reducing gas (e.g., 100°C, 150°C, or 200°C). Heater 120d may be used to control temperature, for example, using closed loop control (eg, simultaneously measuring temperature and using it to control heating).

[0063] As described above, the catalyst 120b of the catalyst area 120a1 in FIG. 7A (or catalyst area 120a2 in FIG. 7B ) of the reducing gas conduit 120 can be configured in a variety of different configurations. Examples of such catalyst configurations are shown in FIG. 7C through FIG. 7E (e.g., cross-sectional view AA of FIG. 7A ). According to certain exemplary embodiments of the present invention, the entire structure of the catalyst can be formed from a precious metal. In other exemplary embodiments, the catalyst structure can include a precious metal (e.g., a precious metal coating on another structure).

[0064] 7C , which shows a mesh configuration 120b1 of catalyst 120b. In this embodiment, catalyst 120b (e.g., formed of or containing a noble metal) is formed into a cross-shaped structure with openings to allow a reducing gas (e.g., reducing gas 130) to flow through reducing gas conduit 120. This embodiment is intended to provide a large surface area of ​​catalyst for interaction with the reducing gas.

[0065] 7D, a perforated block configuration 120b2 of catalyst 120b is shown. In this configuration, catalyst 120b (eg, formed of or including a noble metal) is formed into a structure having a plurality of through slots (or through holes) to allow a reducing gas to flow therethrough.

[0066] Referring now to FIG. 7E , an inner surface configuration 120b3 of the catalyst 120b is shown. In this configuration, the catalyst 120b is disposed on the inner surface of the reducing gas conduit 120. This configuration can provide a smaller surface area for interaction with the reducing gas (compared to the configurations of FIG. 7C to FIG. 7D ) but can allow for a greater flow rate of the reducing gas.

[0067] It should be understood that these configurations are exemplary in nature and are not intended to limit the configuration of the catalyst to the examples shown. For example, a combination of one or more configurations (e.g., a combination of a mesh configuration 120b1 and an inner surface configuration 120b3) and one or more materials is contemplated.

[0068] Referring now to FIG. 8 , a cross-section of a portion of the reducing gas conduit 120 in a "serpentine configuration" is shown. The reducing gas conduit 120 includes a catalyst area 120a3 (including a catalyst 120b) and a heater 120c. In certain applications, a "serpentine configuration" may be desirable. For example, such a configuration provides more efficient use of space within the joint system. Furthermore, such a configuration provides a circuitous path for the reducing gas, enabling better interaction with the catalyst 120b (e.g., by increasing surface area, increasing flow duration through the conduit, increasing non-laminar flow of the reducing gas, increasing friction between the reducing gas and the catalyst, etc.). While FIG. 8 illustrates a "serpentine configuration," the present invention is not limited thereto (e.g., alternative configurations may include spirals / helices, right-angle turns, return branches (to increase turbulence), etc.). The circuitous path configuration may include one or more of the configurations illustrated and described in FIG. 7C through FIG. 7E , etc.

[0069] Figures 9 through 11 are flow charts illustrating various methods for providing a reducing gas to a bonding system. As will be understood by those skilled in the art, certain steps included in the flow charts may be omitted, additional steps may be added, and the order of the steps may differ from that shown, all within the scope of the present invention.

[0070] Referring now to FIG. 9 , at step 902, a bonding tool for bonding a semiconductor component to a substrate is provided (e.g., see bonding tool 110, semiconductor component 112, and substrate 104 throughout the figures). At step 904, a reducing gas is transported in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein the reducing gas is configured for use during bonding of the semiconductor component to the substrate at the bonding region (e.g., see reducing gas 130, reducing gas conduit 120, reducing gas source 118, and bonding region throughout the figures). At step 906, an excess of reducing species (e.g., H+ ions) is generated in the reducing gas using a catalyst (e.g., the catalyst is formed of or includes at least one noble metal, such as platinum, palladium, gold, etc.) as the reducing gas is transported in the reducing gas conduit (e.g., reducing gas 130 passes through catalyst region 120a and thus includes the excess reducing species, as shown throughout the various figures). During step 906, the catalyst may be heated using a heating element (e.g., an in-line heater, heater 120c of FIG. 7A , heater 120d of FIG. 7B , etc.) Such heating may improve chemical processes associated with the generation of excess reducing species.

[0071] At optional step 908, a reducing gas is supplied to a bond head assembly that carries a bonding tool, and the reducing gas is supplied to the bonding area via the bond head assembly (e.g., see Figures 1, 3, and 5A-5B). At optional step 910, a reducing gas is supplied to a support structure that supports the substrate, and the reducing gas is supplied to the bonding area via the support structure (e.g., see Figures 2, 4, and 6A-6B). At optional step 912, a reducing gas is supplied to a substrate oxide reduction chamber of the bonding system via a reducing gas conduit (e.g., see Figures 5A-5B and 6A-6B), and the substrate is received at the bonding area via the substrate oxide reduction chamber before bonding the semiconductor component to the substrate.

[0072] Referring now to FIG. 10 , at step 1002, a bonding tool for bonding a semiconductor component to a substrate is provided (e.g., see bonding tool 110, semiconductor component 112, and substrate 104 throughout the figure). At step 1004, a reducing gas is delivered in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein the reducing gas is configured for use during bonding of the semiconductor component to the substrate at the bonding region (e.g., see reducing gas 130, reducing gas conduit 120, reducing gas source 118, and bonding region throughout the figure). In step 1006, an excess reducing species (e.g., H+ ions) is generated in a reducing gas using a noble metal structure (e.g., the catalyst is formed of or includes at least one noble metal, such as platinum, palladium, gold, etc.), while the reducing gas is transported in a reducing gas conduit, and the noble metal structure is configured as at least one of the following: (i) a mesh configuration within the reducing gas conduit; (ii) a perforated block configuration within the reducing gas conduit; and (iii) a configuration covering the inner surface of the reducing gas conduit (e.g., see the various configurations shown in Figures 7C to 7E).

[0073] Referring now to FIG. 11 , at step 1102, a bonding tool for bonding a semiconductor component to a substrate is provided (e.g., see bonding tool 110, semiconductor component 112, and substrate 104 throughout the figure). At step 1104, a reducing gas is delivered in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein the reducing gas is configured for use during bonding of the semiconductor component to the substrate at the bonding region (e.g., see reducing gas 130, reducing gas conduit 120, reducing gas source 118, and bonding region 122 throughout the figure). In step 1106, an excess reducing species (e.g., H+ ions) is generated in the reducing gas using a catalyst (e.g., the catalyst is formed of or contains at least one noble metal, such as platinum, palladium, gold, etc.) while the reducing gas is transported in the reducing gas conduit, and the catalyst is configured as at least one of the following: (i) a mesh configuration within the reducing gas conduit; (ii) a perforated block configuration within the reducing gas conduit; and (iii) a configuration covering the inner surface of the reducing gas conduit (e.g., see the various configurations shown in Figures 7C to 7E).

[0074] Although the invention has been shown and described with reference to specific embodiments, it is not intended that the invention be limited to the details shown. Rather, various modifications may be made to the details within the scope and range of equivalents of the claims and without departing from the invention.

[0075] This application claims priority to U.S. Provisional Application No. 63 / 328,771, filed on April 8, 2022, the contents of which are incorporated herein by reference.

[0076] 100:Joint system 102: Support structure 102a: Top plate 102b: Heater 102c: Chuck 104:Substrate 104a: conductive structure 106:Joint head assembly 107: Plate 108: Heater 110:Joining tool 112: Semiconductor components 112a: Conductive structure 112a1: Welding materials 114:Joint head manifold 114a: Channel 114b: Channel 114b1: Pipeline 114c: Channel 116:Export pipe 118: Reducing gas source 120: Reducing gas conduit 120a: Catalyst range 120a1: Catalyst range 120a2: Catalyst range 120a3: Catalyst range 120b: Catalyst 120b1: Mesh configuration 120b2: Punch block configuration 120b3: Inner surface configuration 120c: Heater 120d: Heater 122: junction area 128: Protective gas 130: Reducing gas 200:Joint system 202: Support structure 202a: Top plate 202b: Heater 202c: Chuck 214: Manifold 214a: Channel 214b: Channel 214c: Channel 216:Export pipe 222: junction area 300:Joint system 300a: substrate source 300a1: Support structure 300b: Processing system 302: Tunnel 302a1: Entrance door 302a1a: Opening 302b: Substrate oxide prevention chamber 302c: Engagement position 302e: Opening 304: Main discharge section 304a: Pipeline 306: Inert environment 308: Reduction gas delivery system 320: Internal environmental chamber 400:Joint system 400a: Substrate source 400a1: Support structure 400b: Processing System 402: Tunnel 402a1: Entrance door 402a1a: Opening 402b: Substrate oxide prevention chamber 402c: Engagement position 402e: Opening 404: Main discharge section 404a: Pipeline 404b: Pipeline 406: Inert environment 408: Reduction gas delivery system 420: Internal environmental chamber 500:Joint system 500':Joint system 500a: Substrate source 500a1: Support structure 500b: Processing system 502: Tunnel 502a: substrate oxide reduction chamber 502a1: Entrance door 502a1a: Opening 502a2: Exit door 502a2a: Opening 502b: Substrate oxide prevention chamber 502c: Engagement position 502d: Reduction gas delivery system 502e: Opening 504: Main discharge section 504a: Pipeline 506: Inert environment 508: Reduction gas delivery system 600:Joint system 600':Joint system 600a: Substrate source 600a1: Support structure 600b: Processing system 602: Tunnel 602a: Substrate oxide reduction chamber 602a1: Entrance door 602a1a: Opening 602a2: Exit door 602a2a: Opening 602b: Substrate oxide prevention chamber 602c: Engagement position 602d: Reduction gas delivery system 602e: Opening 604: Main discharge section 604a: Pipeline 604b: Pipeline 606: Inert environment 608: Reduction gas delivery system 902: Steps 904: Steps 906: Steps 908: Steps 910: Steps 912: Steps 1002: Step 1004: Step 1006: Steps 1102: Steps 1104: Steps 1106: Steps AA:Line

Claims

1. A joining system, comprising: A bonding assembly configured to carry a bonding tool for bonding a semiconductor element to a substrate; And a reducing gas conduit for transporting a reducing gas from (i) a reducing gas source to (ii) a bonding region of the bonding system, wherein the reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding region, the reducing gas conduit comprising a catalyst for generating an excess reducing species in the reducing gas before the reducing gas reaches the bonding region, and wherein the catalyst comprises a noble metal.

2. The joining system as described in claim 1, wherein, The reducing gas conduit is configured to supply the reducing gas to the joint assembly carrying the jointing tool.

3. The joining system as described in claim 1, wherein, The reducing gas conduit is configured to supply the reducing gas to a support structure for supporting the substrate.

4. The joining system as described in claim 1, wherein, The reducing gas conduit contains a heating element.

5. The joining system as described in claim 1, wherein, This excess reduced species contains H+ ions.

6. The joining system as described in claim 1, wherein, The catalyst is arranged in a mesh configuration in the reducing gas conduit.

7. The joining system as described in claim 1, wherein, The catalyst is configured as a perforated block in the reducing gas conduit.

8. The joining system as described in claim 1, wherein, The catalyst is disposed on an inner surface of the reducing gas conduit.

9. The joining system as described in claim 1, wherein, The reducing gas conduit is also configured to deliver the reducing gas to a substrate oxide reduction chamber, which is configured to receive the substrate before bonding the semiconductor element to the substrate.

10. A joining system, comprising: A bonding assembly configured to carry a bonding tool for bonding a semiconductor element to a substrate; And a reducing gas conduit for transporting a reducing gas from (i) a reducing gas source to (ii) a bonding region of the bonding system, wherein the reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding region, the reducing gas conduit comprising a noble metal structure configured as at least one of: (a) a mesh configuration within the reducing gas conduit; (b) a perforated block configuration within the reducing gas conduit; and (c) a configuration covering an inner surface of the reducing gas conduit.

11. The joining system as claimed in claim 10, wherein, This noble metal structure is a catalyst used to generate an excess of a reducing species in the reducing gas.

12. The joining system as claimed in claim 11, wherein, This excess reduced species contains H+ ions.

13. The joining system as described in claim 10, wherein, The reducing gas conduit is configured to supply the reducing gas to the joint assembly carrying the jointing tool.

14. The joining system as claimed in claim 10, wherein, The reducing gas conduit is configured to supply the reducing gas to a support structure for supporting the substrate.

15. The joining system as claimed in claim 10, wherein, The reducing gas conduit contains a heating element.

16. The joining system as claimed in claim 10, wherein, The reducing gas conduit is also configured to deliver the reducing gas to a substrate oxide reduction chamber, which is configured to receive the substrate before bonding the semiconductor element to the substrate.

17. A joining system, comprising: A bonding assembly configured to carry a bonding tool for bonding a semiconductor element to a substrate; And a reducing gas conduit for transporting a reducing gas from (i) a reducing gas source to (ii) a bonding region of the bonding system, wherein the reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding region, the reducing gas conduit comprising a catalyst configured as at least one of: (a) a mesh configuration within the reducing gas conduit; (b) a perforated block configuration within the reducing gas conduit; and (c) a configuration covering an inner surface of the reducing gas conduit.

18. The joining system as claimed in claim 17, wherein, The catalyst contains a noble metal.

19. The joining system as claimed in claim 17, wherein, The reducing gas conduit is configured to supply the reducing gas to the joint assembly carrying the jointing tool.

20. The joining system as claimed in claim 17, wherein, The reducing gas conduit is configured to supply the reducing gas to a support structure for supporting the substrate.

21. The joining system as claimed in claim 17, wherein, The reducing gas conduit contains a heating element.

22. The joining system as claimed in claim 17, wherein, The catalyst is used to generate an excess of a reduced species in the reducing gas.

23. The joining system as claimed in claim 22, wherein, This excess reduced species contains H+ ions.

24. The joining system as claimed in claim 17, wherein, The reducing gas conduit is also configured to deliver the reducing gas to a substrate oxide reduction chamber, which is configured to receive the substrate before bonding the semiconductor element to the substrate.

25. A method of providing a reducing gas on a bonding system, the method comprising the steps of: (a) providing a bonding tool for bonding a semiconductor element to a substrate; and (b) delivering the reducing gas in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein, The reducing gas is configured for use during the bonding of the semiconductor element to the substrate at the bonding region; and (c) when the reducing gas is transported in the reducing gas conduit, a catalyst is used to generate an excess reducing species in the reducing gas, wherein the catalyst comprises a noble metal.

26. The method of claim 25 further includes the step of providing the reducing gas to a joint assembly that carries the jointing tool, the reducing gas being provided to the jointing area via the joint assembly.

27. The method of claim 25 further includes the step of providing the reducing gas to a support structure for supporting the substrate, the reducing gas being provided to the bonding region via the support structure.

28. As in request item 25, wherein, Step (c) involves heating the catalyst with a heater.

29. As in request item 25, wherein, The excess reduced species produced in step (c) contains H+ ions.

30. As in request item 25, wherein, The catalyst is arranged in a mesh configuration in the reducing gas conduit.

31. As in request item 25, wherein, The catalyst is configured as a perforated block in the reducing gas conduit.

32. As in request item 25, wherein, The catalyst is disposed on an inner surface of the reducing gas conduit.

33. The method of claim 25 further includes step (d), which provides the reducing gas via the reducing gas conduit to a substrate oxide reduction chamber of the bonding system, and step (e), which receives the substrate at the bonding region via the substrate oxide reduction chamber before bonding the semiconductor element to the substrate.

34. A method of providing a reducing gas on a bonding system, the method comprising the steps of: (a) providing a bonding tool for bonding a semiconductor element to a substrate; and (b) delivering the reducing gas in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein, The reducing gas is configured for use during the bonding of the semiconductor element to the substrate at the bonding region; and (c) when the reducing gas is transported in the reducing gas conduit, a noble metal structure is used to generate an excess reducing species in the reducing gas, the noble metal structure being configured as at least one of the following: (i) a mesh configuration within the reducing gas conduit; (ii) a perforated block configuration within the reducing gas conduit; and (iii) a configuration covering an inner surface of the reducing gas conduit.

35. As in request item 34, wherein, This noble metal structure is a catalyst for producing the excess reduced species in the reducing gas.

36. As in request item 34, wherein, This excess reduced species contains H+ ions.

37. The method of claim 34 further includes the step of providing the reducing gas to a joint assembly that carries the jointing tool, the reducing gas being provided to the jointing area via the joint assembly.

38. The method of claim 34 further includes the step of providing the reducing gas to a support structure for supporting the substrate, the reducing gas being provided to the bonding region via the support structure.

39. As in request item 34, wherein, Step (c) involves heating the precious metal structure with a heater.

40. The method of claim 34, further comprising step (d) of providing the reducing gas via the reducing gas conduit to a substrate oxide reduction chamber of the bonding system, and step (e) of receiving the substrate at the bonding region via the substrate oxide reduction chamber before bonding the semiconductor element to the substrate.

41. A method of providing a reducing gas on a bonding system, the method comprising the steps of: (a) providing a bonding tool for bonding a semiconductor element to a substrate; and (b) delivering the reducing gas in a reducing gas conduit extending between (i) a reducing gas source and (ii) a bonding region of the bonding system, wherein, The reducing gas is configured for use during the bonding of the semiconductor element to the substrate at the bonding region; and (c) when the reducing gas is transported in the reducing gas conduit, a catalyst is used to generate an excess reducing species in the reducing gas, the catalyst being configured as at least one of the following: (i) a mesh configuration within the reducing gas conduit; (ii) a perforated block configuration within the reducing gas conduit; and (iii) a configuration covering an inner surface of the reducing gas conduit.

42. As in request item 41, wherein, This excess reduced species contains H+ ions.

43. The method of claim 41 further includes the step of providing the reducing gas to a joint assembly that carries the jointing tool, the reducing gas being provided to the jointing area via the joint assembly.

44. The method of claim 41 further includes the step of providing the reducing gas to a support structure for supporting the substrate, the reducing gas being provided to the bonding region via the support structure.

45. As in request item 41, wherein, Step (c) involves heating the catalyst with a heater.

46. ​​The method of claim 41, further comprising step (d) of providing the reducing gas via the reducing gas conduit to a substrate oxide reduction chamber of the bonding system, and step (e) of receiving the substrate at the bonding region via the substrate oxide reduction chamber before bonding the semiconductor element to the substrate.

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