Precursor comprisi ng for yttrium or actinoid containg thin film, deposition method of film and semiconductor device of the same

Abstract

This invention relates to a yttrium or scandium-containing thin film precursor comprising a compound represented by Formula 1, a method for forming a yttrium or scandium-containing thin film using the precursor, and a semiconductor device comprising the yttrium or scandium-containing thin film. The precursor contains yttrium or scandium as a central metal atom and includes a cyclopentadienyl ligand for achieving properties such as low melting point and high volatility. It also includes a novel amidine ligand for achieving properties such as high structural stability, low viscosity, high volatility, high heat resistance, and a liquid state at room temperature or a solid state with a low melting point. This allows the precursor to exhibit physical properties suitable for use in thin film formation processes, thereby forming high-quality thin films.

Description

Precursor for forming a thin film containing yttrium or scandium, method for forming a thin film containing yttrium or scandium using the precursor, and semiconductor element including the thin film containing yttrium or scandium The present invention relates to a thin film forming precursor containing yttrium or scandium, a method for forming a thin film containing yttrium or scandium using the precursor, and a semiconductor device comprising the thin film containing yttrium or scandium. In particular, the present invention relates to a thin film forming precursor containing yttrium or scandium that can form a low viscosity, high heat resistance and high volatility precursor by a chemical structure containing an amidine ligand, thereby forming a high-quality thin film, a method for forming a thin film using the precursor, and a semiconductor device comprising the thin film. As semiconductor device line widths become increasingly smaller, increasing integration density, the space available for implementing capacitor structures becomes limited by the line width. Consequently, the manufacturing methods for semiconductor devices that utilize organic silicon dielectrics for capacitor structures are also limited. In particular, the use of high-k dielectric films as an alternative to organic silicon dielectrics can significantly degrade leakage current due to the band gap. As one of the solutions to the above-mentioned problems, a technology capable of forming a high-quality thin film is required, and for this purpose, it is necessary to optimize the precursors used in forming the thin film. As an example of existing precursor optimization strategies, various doping precursors have been proposed to improve dielectric constant and leakage current characteristics. However, these precursors are typically solid or low-volatility liquids. Their high viscosity, in particular, can cause various problems during thin film deposition. Therefore, optimizing thin film precursors requires enhancing their physical properties, such as high volatility and low viscosity. To this end, various metal-containing precursors have been developed. For example, Korean Patent Publication No. 10-2019-0008427 discloses a lanthanum metal-containing precursor with an azide-allyl ligand, while Korean Patent Publication No. 10-2021-0089015 discloses an yttrium metal-containing precursor with a cyclopentadienyl ligand. As previously described, it has been confirmed that complexes containing cyclopentadienyl groups, or cyclopentadienyl groups substituted or bonded with other ligands, have lower melting points and higher volatility than compounds containing β-diketone or bis(trimethylsilyl)amide, and are therefore more suitable for use as precursors in thin film formation processes. For these reasons, prior art, such as Korean Patent Registration No. 10-1660052, Korean Patent Publication No. 10-2019-0109142, and Korean Patent Publication No. 10-2021-0084297, proposes a chemical structure containing yttrium or lanthanum metals, combined with cyclopentadienyl and amidine groups as ligands. The report indicates that precursors combined with such ligands can overcome the shortcomings of existing precursors, which have low vapor pressure and high viscosity, making them suitable for use in thin film formation processes. Prior Art Documents Patent Documents (Patent Document 0001) Korean Patent Publication No. 10-2019-0008427 (Patent Document 0002) Korean Patent Publication No. 10-2021-0089015 (Patent Document 0003) Korean Registered Patent Publication No. 10-1660052 (Patent Document 0004) Korean Patent Publication No. 10-2019-0109142 (Patent Document 0005) Korean Patent Publication No. 10-2021-0084297 An object of the present invention is to solve the problems existing in the prior art as described above and to provide a novel thin film forming precursor containing yttrium or scandium that exhibits chemical properties suitable for a thin film forming precursor. Another object of the present invention is to provide a thin film forming precursor containing yttrium or scandium that exhibits chemical properties of low viscosity, high heat resistance, and high volatility and is in a liquid state or a solid state with a relatively low melting point at room temperature. In addition, an object of the present invention is to provide a method for forming a thin film using the precursor. Another object of the present invention is to provide a semiconductor element including the thin film. In order to achieve the above-mentioned object, the thin film forming precursor containing yttrium or scandium of the present invention is characterized by including a compound represented by the following Chemical Formula 1. [Chemical Formula 1] In the chemical formula, M is yttrium or scandium metal, R 1 and R 3 are each independently C 1-C 5 straight chain, branched or cyclic alkyl or alkenyl, R 2 is a hydrogen atom or C 1-C 4 straight chain, branched or cyclic alkyl or alkenyl, R' is the same or different, and is a hydrogen atom or C 1-C 4 linear, branched or cyclic alkyl or alkenyl groups, wherein n is an integer from 1 to 5. In addition, the R 2 can be C 2-C 4 is a straight chain, branched or cyclic alkyl or alkenyl group. In addition, the R 1 and R 3 can be independently C 2-C 5 straight chain, branched or cyclic alkyl or alkenyl, said R 2 can be C 2-C 4 is a straight chain, branched or cyclic alkyl or alkenyl group. In addition, the R 1 and R 3 can be a methyl group. In addition, the R 2 can be isopropyl. In addition, the R 1 and R 3 can be independently C 1-C 5' straight chain alkyl or alkenyl. In addition, the R 1 and R 3 can be independently C 1-C 5 straight chain alkyl or alkenyl, said R 2 can be C 1-C 4' straight chain alkyl or alkenyl. In addition, the R 1 and R 3 may all be the same and may be alkyl or alkenyl. In addition, the R 1 to R 3 may all be the same and may be alkyl or alkenyl. Furthermore, the viscosity of the thin film forming precursor containing yttrium or scandium is preferably 60 cP or less. Furthermore, the melting point of the thin film forming precursor containing yttrium or scandium is preferably 70° C. or lower. In addition, the thin film forming precursor may further include a solvent, and the solvent may be C 1-C 16The thin film forming precursor may contain 1 to 99 wt % of the solvent relative to the total weight of the thin film forming precursor. The method for forming a thin film containing yttrium or scandium of the present invention is characterized in that it includes a process of forming a thin film on a substrate using the thin film forming precursor, and the process of forming a thin film on a substrate includes a process of forming a precursor thin film by depositing the thin film forming precursor on the surface of the substrate and a process of reacting the precursor thin film with a reactive gas. Furthermore, the step of forming a precursor thin film may include a step of vaporizing the thin film forming precursor and transferring the vaporized precursor into a chamber. In addition, the deposition can be performed through one of a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, a chemical vapor deposition (CVD) process, a plasma chemical vapor deposition (PECVD) process, a high density plasma chemical vapor deposition (HDPCVD) process, an atomic layer deposition (ALD) process, or a plasma atomic layer deposition (PEALD) process. Furthermore, the step of forming the thin film containing yttrium or scandium on the substrate may include a step of supplying the thin film forming precursor to the substrate and applying plasma to form the thin film. Furthermore, the semiconductor element of the present invention is characterized by including a thin film produced by the above-mentioned method for forming a thin film containing yttrium or scandium. According to the present invention, the precursor for forming a thin film containing yttrium or scandium includes cyclopentadienyl and amidine ligands, so the precursor compound has excellent structural stability and exhibits low viscosity, high volatility, heat resistance, and the characteristics of a liquid state at room temperature or a solid state with a low melting point, thereby exhibiting physical properties suitable for use in thin film formation projects containing yttrium or scandium. Furthermore, a thin film containing yttrium or scandium can be formed using the precursor, and a semiconductor element including the thin film containing yttrium or scandium produced by the thin film formation method can be provided. Next, the present invention will be described in more detail. Terms and words used in this specification and the scope of the patent application should not be interpreted in a manner limited to their general or dictionary meanings. Instead, they should be interpreted based on the principle that the inventor can appropriately define the concepts of the terms in order to best describe his or her invention, and in a manner consistent with the meaning and concept of the technical concept of the present invention. The thin film forming precursor containing yttrium or scandium according to the present invention is characterized by including a compound represented by the following Chemical Formula 1. [Chemical Formula 1] In the chemical formula, M is yttrium (Y) or scandium (Sc), R 1 and R 3 are each independently C 1-C 5 straight chain, branched or cyclic alkyl or alkenyl, R 2 is a hydrogen atom or C 1-C 4 straight chain, branched or cyclic alkyl or alkenyl, R' is the same or different, and is a hydrogen atom or C 1-C 4 linear, branched or cyclic alkyl or alkenyl groups, wherein n is an integer from 1 to 5. In the chemical formula 1, R constituting the amidine ligand 1 and R 3 can be the same or different and can be constituted in various forms according to the target effect that can be achieved by the precursor provided by the present invention. In addition, in the chemical formula 1, R constituting the amidine ligand 2 can be a hydrogen atom or a C 1-C The linear, branched or cyclic alkyl or alkenyl group of 4 may include, as non-limiting examples, n-alkyl groups such as ethyl, propyl and butyl. The compound represented by Chemical Formula 1 is a precursor having a chemical structure with yttrium or scandium as the central metal atom and containing an amidine ligand. The compound contains a cyclopentadienyl ligand that can achieve properties such as a low melting point and high volatility. It also contains a new amidine ligand that is different from the current ones, thereby imparting properties such as high structural stability, low viscosity, high volatility, high heat resistance, and a liquid form at room temperature or a solid state with a low melting point. That is, the thin film forming precursor containing yttrium or scandium according to the present invention uses yttrium or scandium as the central metal and includes different types of ligands with different effects that can make respective contributions to the performance improvement of the precursor, especially including a new amidine-based ligand that can achieve excellent effects such as structural stability, low viscosity, high volatility, high heat resistance, and a liquid state at room temperature or a solid state with a low melting point, thereby exhibiting physical properties suitable for use in thin film formation engineering and thereby forming high-quality thin films. The thin film forming precursor represented by Chemical Formula 1 can have various forms with different functional groups. In one embodiment, the R 2 can be C 2-C 4 straight chain, branched or cyclic alkyl or alkenyl, in the R 2 for C 2 or more, with C Compared with the case of 1, the intramolecular symmetry can be increased and the mutual interference between molecules can be reduced, so that the precursor containing the ligand can be easily formed in a liquid state or a solid state with a low melting point, and low viscosity characteristics can also be achieved. In addition, the R 1 and R 3 can be independently C 2-C 5 straight chain, branched or cyclic alkyl or alkenyl, said R 2 can be C 2-C 4 is a straight chain, branched or cyclic alkyl or alkenyl group. In addition, in one embodiment, the R 1 and R 3 can be methyl, the R 2 can be isopropyl. In addition, the R 1 and R 3 can be independently C 1-C 5' straight chain alkyl or alkenyl. Compared with branched or cyclic alkyl or alkenyl groups, straight-chain alkyl or alkenyl groups can reduce the molecular weight by minimizing the structure of the ligand and thereby achieve the effect of improving volatility and vapor pressure. Therefore, in the ligand according to one embodiment of the present invention, R 1 and R 3 can each be composed of a straight-chain alkyl group or an alkenyl group. In this case, the vapor pressure of the thin film forming precursor containing the ligand can be increased, thereby achieving effects such as improving the process convenience in the thin film forming process using the precursor. In addition to the vapor pressure improvement effect, 1 and R The ligands each composed of a linear alkyl group have a high degree of structural freedom, thereby increasing the degree of freedom in the precursors suitable for the ligand. This effect minimizes interference between the precursors, thereby achieving liquefaction and low viscosity of the precursors. Therefore, in the amidine ligand according to one embodiment of the present invention, R 1 and R 3 can be composed of a straight-chain alkyl or alkenyl group. In the above case, the vapor pressure of the precursor containing the ligand can be increased, and it can be easily formed in a liquid state or a solid state with a low melting point by increasing the degree of freedom, and low viscosity characteristics can also be achieved at the same time. In addition, the R 1 and R 3 can be independently C 1-C 5 straight chain alkyl or alkenyl, said R 2 can be C 1-C 4' straight chain alkyl or alkenyl. In addition, the R 1 and R 3 can all be the same and can be C 1-C 5' straight chain, branched chain or cyclic alkyl or alkenyl. In addition, the R 1 to R 3 can all be the same and can be C 1-C 4 is a straight chain, branched or cyclic alkyl or alkenyl group. An exemplary structure of the thin film forming precursor represented by Chemical Formula 1 as described above is shown below. In addition, the cyclopentadienyl ligand may adopt a substituted structure, thereby adjusting the size of the molecule and thereby adjusting the viscosity and volatility of the compound. The viscosity of the thin film forming precursor containing yttrium or scandium is preferably 60 cP or less. The melting point of the thin film forming precursor is preferably 70° C. or less. By adopting the chemical structure of the thin film forming precursor of the present invention as described above, a liquid precursor with low viscosity, high heat resistance and high volatility can be obtained, thereby forming a high-quality thin film. In addition, considering the conditions and efficiency of the thin film forming process, the thin film forming precursor of the present invention may further include a solvent for dissolving or diluting the precursor compound. As the solvent, C 1-C 16 One or a mixture of saturated or unsaturated hydrocarbons, ketones, ethers, glycol dimethyl ether, esters, tetrahydrofuran and tertiary amines. 1-C 16 Examples of the saturated or unsaturated hydrocarbons include pentane, cyclohexane, ethylcyclohexane, heptane, octane and toluene, and examples of the tertiary amines include dimethylethylamine and triethylamine. In particular, depending on its chemical structure, the thin film-forming precursor compound may be solid at room temperature. In such cases, the compound can be dissolved by including the solvent. Specifically, when the solvent is included, the solvent is capable of dissolving the precursor compound, and the content thereof is preferably 1 to 99% by weight relative to the total weight of the thin film-forming precursor. Since the precursor, whether containing or not containing the solvent, can be vaporized, it can be supplied into the chamber in the form of a precursor gas. Therefore, depending on the type of thin film forming precursor compound, if it exists in a liquid state at room temperature and can be easily vaporized, a thin film forming process can be performed without using a separate solvent. In the case described above, the thin film formation process containing yttrium or scandium can be performed through one of a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, a chemical vapor deposition (CVD) process, a plasma chemical vapor deposition (PECVD) process, a high density plasma chemical vapor deposition (HDPCVD) process, an atomic layer deposition (ALD) process or a plasma atomic layer deposition (PEALD) process. For example, when high-density plasma chemical vapor deposition (HDP-CVD) is used, it can be performed under high vacuum and high power compared to atmospheric pressure chemical vapor deposition (AP-CVD), low pressure chemical vapor deposition (LP-CVD), or plasma-enhanced chemical vapor deposition (PE-CVD), thereby forming a thin film with a dense structure and excellent mechanical properties. Therefore, the thin film forming method according to the present invention includes a step of forming a thin film on a substrate using the thin film forming precursor. Specifically, the process of forming a thin film containing yttrium or scandium on the substrate may include forming a precursor thin film by depositing the thin film forming precursor on the surface of the substrate and reacting the precursor thin film with a reactive gas. Furthermore, the method may include vaporizing the thin film forming precursor and transferring the vaporized precursor into a chamber for deposition of the precursor. In addition, the process of forming a thin film containing yttrium or scandium on the substrate may include a process of forming a thin film of metal, oxide, nitride, oxynitride, etc. by supplying the thin film forming precursor to the substrate and applying plasma in the presence of a reactive gas. The thin film formation process can be performed under a chamber pressure of 0.1 to 10 Torr. Furthermore, the source power for forming the plasma in the chamber is preferably 500 to 9,000 W, and the bias power is preferably 0 to 5,000 W. Furthermore, the bias power may not be applied depending on the specific situation. Furthermore, the process of forming a thin film on a substrate is preferably performed at a temperature ranging from 150 to 500°C. In addition, when supplying the thin film forming precursor, in order to further improve the electrical properties of the metal film finally formed, i.e., the electrostatic capacitance or leakage current value, a second metal precursor can be introduced as needed. As the second metal precursor, a metal precursor containing one or more metals (M") selected from magnesium (Mg), strontium (Sr), barium (Ba), lanthanum elements (Ln), titanium (Ti), zirconium (Zr), hafnium (Hf), niobium (Nb), tantalum (Ta), aluminum (Al), indium (In), silicon (Si), germanium (Ge) and tin (Sn) atoms can be selectively supplied. The second metal precursor can be an alkylamide compound or an alkoxy compound containing the metal. As an example, when the metal is Si, SiH(N(CH 3) 2) 3. SiH 2(N(C 2H 5) 2) 2. SiH 2(NH t Bu) 2 、SiH 3(N( i Pr) 2 )、Si(OC 4H 9) 4. Si(OC 2H 5) 4. Si(OCH 3) 4 and Si(OC(CH 3) 3) 4th level. The second metal precursor may be supplied in the same manner as the thin film forming precursor, and may be supplied onto the thin film forming substrate together with the precursor, or may be supplied sequentially after the precursor is supplied. In order to contact the thin film forming substrate, the thin film forming precursor and the optional second metal precursor are preferably maintained at a temperature of 50 to 250° C., preferably 100 to 200° C. before being supplied into the reaction chamber. In addition, before supplying the reactive gas after the precursor supply step, purging of the reactor interior with a gas such as argon (Ar), nitrogen (N 2) Inert gas purging, such as helium (He), helps the precursor and optional second metal precursor move above the substrate, creates a pressure within the reactor suitable for deposition, and expels impurities within the chamber. At this point, the pressure within the reactor is preferably maintained at 1 to 5 Torr by purging with inert gas. In addition, water vapor (H 2O), oxygen (O 2) Ozone (O 3) Hydrogen peroxide (H 2O 2) Hydrogen (H 2) Ammonia (NH 3) Nitric oxide (NO), nitrous oxide (N 2O), nitrogen dioxide (NO 2) Hydrazine (N 2H 4) and silane (SiH 4) or a mixture thereof. When carried out in the presence of oxidizing gases such as water vapor, oxygen, and ozone, a metal oxide thin film can be formed. When carried out in the presence of reducing gases such as hydrogen, ammonia, hydrazine, and silane, a metal monomer or metal nitride thin film can be formed. Furthermore, a metal oxynitride thin film can be formed by mixing reactive gases. In addition to plasma treatment, heat treatment or light irradiation can also be performed to provide thermal energy for depositing thin film precursors. This can be carried out according to conventional methods. Preferably, in order to produce a thin film having the desired physical state and composition at a sufficient growth rate, the substrate temperature within the reactor is preferably 100 to 1,000°C, preferably 250 to 600°C. In addition, during the treatment process, the reactor may be purged with argon (Ar), nitrogen (N 2) Engineering of inert gases such as helium (He) to help reactive gases move to the top of the substrate, or to form a pressure suitable for deposition in the reactor, and to discharge impurities or by-products in the reactor to the outside. A thin film can be formed by repeatedly performing the above-described steps of charging a thin film forming precursor, charging an inert gas, charging a reactive gas, and charging an inert gas as one cycle or more. Furthermore, by applying the thin film formation process, various semiconductor devices including thin films can be manufactured. Next, the effects of the present invention will be described through examples. [Synthesis Example 1] Synthesis of bis(ethylcyclopentadienyl)yttrium chloride ((EtCp)2YCl) To a solution of 300 ml of tetrahydrofuran (THF) and 48.22 g (0.512 mol) of ethylcyclopentadiene at -78°C, 204.9 ml (0.512 mol) of a 2.5 M solution of n-butyllithium (n-BuLi) in hexane was slowly added dropwise and stirred for 30 minutes. The mixture was then warmed to room temperature and stirred for another 2 hours to produce a Li-EtCp solution. A new flask was then charged with 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene, then cooled to -78°C with stirring. The previously prepared Li-EtCp solution was slowly added dropwise to the flask containing the yttrium chloride mixture and stirred at -78°C for 30 minutes. The mixture was then warmed to room temperature and stirred for 12 hours to produce bis(ethylcyclopentadienyl)yttrium chloride. [Synthesis Example 2] Bis(ethylcyclopentadienyl)(diethyl-acetamidine)yttrium (EtCp) 2Y(Et Synthesis of 2Et-AMD) 32.83 g (0.256 mol) of diethylacetamidine was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of a 2.5 M hexane solution of n-butyllithium (n-BuLi) to produce Li-(Et 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the mixture containing (EtCp) at room temperature. 2YCl2 was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, then dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 165°C and 40 mTorr to obtain a light yellow liquid. The yield was 60.1 g (58.3%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 1. 1 H NMR(C6D6, 25℃): 0.85(t, 3H), 0.98(t, 6H), 1.20(t, 6H), 1.97(q, 2H), 2.48(q, 4H), 2.97(q, 4H), 6.0(dt, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the pale yellow liquid at a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed 0% residual mass, indicating virtually no residual mass. Figure 2 shows the TGA analysis results, which show the percentage of weight loss as a function of temperature. A pale yellow liquid sample was placed in a sealed differential scanning calorimetry (DSC, TA Instruments Discovery 25) container and maintained at 40°C for 10 minutes. During DSC analysis, the temperature was then increased at a rate of 10°C / minute. A decomposition peak was observed at 431°C. These results are shown in Figure 3, which shows changes in thermal energy as a function of temperature. [Synthesis Example 3] Bis(ethylcyclopentadienyl)(diethyl-n-propionamidino)yttrium (EtCp) 2Y(Et Synthesis of 2nPr-AMD 36.43 g (0.256 mol) of diethyl-n-propionamidate was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of a 2.5 M hexane solution of n-butyllithium (n-BuLi) to produce Li-(Et 2nPr-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2nPr-AMD) solution was slowly added dropwise to the Y(EtCp) The mixture was placed in a 2Cl flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 185°C and 40 mTorr to obtain a light yellow liquid. The yield was 65.1 g (61.0%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 4. 1 H NMR(C6D6, 25℃): 0.83(t, 3H), 0.99(t, 6H), 1.20(t, 6H), 1.36(q, 2H), 1.98(q, 2H), 2.50(q, 4H), 3.00(q, 4H), 6.0(dt, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the pale yellow liquid at a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed 0% residual mass, indicating virtually no residual mass. Figure 5 shows the TGA analysis results, which show the percentage of weight loss as a function of temperature. [Synthesis Example 4] Bis(ethylcyclopentadienyl)(di-n-propyl-acetamidine)yttrium (EtCp) 2Y(nPr Synthesis of 2Et-AMD) 40.02 g (0.256 mol) of diethyl-n-propionamidine ester was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, after which 102.4 ml (0.256 mol) of n-butyllithium (n-BuLi) hexane solution (2.5 M) was slowly added dropwise to produce Li-(nPr 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the Y(EtCp) The mixture was placed in a 2Cl flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 185°C and 40 mTorr to obtain a yellow liquid. The yield was 63.7 g (57.8%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 6. 1 H NMR(C6D6, 25℃): 0.90(m, 9H), 1.21(t, 6H), 1.40(q, 4H), 1.98(q, 2H), 2.50(q, 4H), 3.00(q, 4H), 6.1(dt, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the pale yellow liquid at a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed 0% residual mass, indicating virtually no residual mass. Figure 7 shows the TGA analysis results, which show the percentage of weight loss as a function of temperature. [Synthesis Example 5] Bis(isopropylcyclopentadienyl)yttrium chloride (iPrCp) Synthesis of 2YCl To a solution of 300 ml of tetrahydrofuran (THF) and 55.40 g (0.512 mol) of isopropylcyclopentadiene at -78°C, 204.9 ml (0.512 mol) of a 2.5 M n-butyllithium (n-BuLi) hexane solution was slowly added dropwise and stirred for 30 minutes. The mixture was then warmed to room temperature and stirred for another 2 hours to produce a Li-EtCp solution. A new flask was then charged with 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene, which was then cooled to -78°C with stirring. The previously prepared Li-EtCp solution was slowly added dropwise to the flask containing the yttrium chloride mixture and stirred at -78°C for 30 minutes. The mixture was then warmed to room temperature and stirred for 12 hours to produce bis(isopropylcyclopentadienyl)yttrium chloride. [Synthesis Example 6] Bis(isopropylcyclopentadienyl)(diethyl-acetamidine)yttrium (iPrCp) 2Y(Et Synthesis of 2Et-AMD) 32.83 g (0.256 mol) of diethylacetamidine was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of a 2.5 M hexane solution of n-butyllithium (n-BuLi) to produce Li-(Et 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the solution containing (iPrCp) at room temperature. 2YCl was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 170°C and 20 mTorr to obtain a yellow liquid. The yield was 63.6 g (70.1%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 8. 1 H NMR(C6D6, 25℃): 0.85(t, 3H), 1.02(t, 6H), 1.24(d, 12H), 1.94(q, 2H), 2.82(m, 2H), 3.01(q, 4H), 6.01(dt, 8H). The light yellow liquid was analyzed by thermogravimetric analysis (TGA, SDT Q600 from TA Instruments) at a nitrogen flow rate of 200 ml / min and a temperature increase rate of 10°C / min. The result was 0%, indicating almost no residual mass. [Synthesis Example 7] Bis(cyclopentadienyl)yttrium chloride ((Cp) Synthesis of 2YCl To a solution of 300 ml of tetrahydrofuran (THF) and 33.85 g (0.512 mol) of cyclopentadiene at -78°C, 204.9 ml (0.512 mol) of a 2.5 M solution of n-butyllithium (n-BuLi) in hexane was slowly added dropwise and stirred for 30 minutes. The mixture was then warmed to room temperature and stirred for another 2 hours to produce a Li-Cp solution. A new flask was then charged with 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene, which was then cooled to -78°C with stirring. The previously prepared Li-Cp solution was slowly added dropwise to the flask containing the yttrium chloride mixture and stirred at -78°C for 30 minutes. The mixture was then warmed to room temperature and stirred for 12 hours to produce bis(cyclopentadienyl)yttrium chloride. [Synthesis Example 8] Bis(cyclopentadienyl)(diethyl-acetamidine)yttrium (Cp) 2Y(Et Synthesis of 2Et-AMD) 32.83 g (0.256 mol) of diethylacetamidine was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of a 2.5 M hexane solution of n-butyllithium (n-BuLi) to produce Li-(Et 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the mixture containing (Cp) at room temperature. 2YCl was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 166°C and 33 mTorr to obtain a yellow solid. The yield was 51.2 g (48.5%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 9. 1 H NMR(C6D6, 25℃): 0.81(t, 3H), 0.96(t, 6H), 1.90(q, 2H), 2.96(q, 4H), 6.16(s, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the yellow solid under a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed a mass loss of 1.5%, indicating virtually no residual mass. Figure 10 shows the TGA analysis results, which show the percentage weight loss as a function of temperature. A yellow solid sample was placed in a sealed container for differential scanning calorimetry (DSC, TA Instruments Discovery 25) and maintained at 40°C for 10 minutes. During differential scanning calorimetry (DSC) analysis, the temperature was increased at a rate of 10°C / minute, and a decomposition peak was observed at 402°C. [Synthesis Example 9] Bis(cyclopentadienyl)(diethyl-n-propionamidino)yttrium (Cp) 2Y(Et Synthesis of 2nPr-AMD 36.433 g (0.256 mol) of diethyl-n-propionamidate was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of n-butyllithium (n-BuLi) hexane solution (2.5 M) to produce Li-(Et 2nPr-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2nPr-AMD) solution was slowly added dropwise to the (Cp) 2YCl2 was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, then dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 160°C and 28 mTorr to obtain a red solid. The yield was 49.6 g (53.8%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 11. 1 H NMR(C6D6, 25℃): 0.82(t, 3H), 0.97(t, 6H), 1.28(t, 6H), 1.93(q, 2H), 2.99(q, 4H), 6.0(s, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the red solid under a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed a mass loss of 1.9%, indicating virtually no residual mass. Figure 12 shows the TGA analysis results, which show the percentage weight loss as a function of temperature. [Synthesis Example 10] Bis(cyclopentadienyl)(di-n-propyl-acetamidine)yttrium ((Cp) 2Y(nPr Synthesis of 2Et-AMD) 32.83 g (0.256 mol) of di-n-propyl-acetamidine ester was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, after which 102.4 ml (0.256 mol) of n-butyllithium (n-BuLi) hexane solution (2.5 M) was slowly added dropwise to produce Li-(nPr 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the mixture containing (Cp) at room temperature. 2YCl2 was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, then dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 165°C and 36 mTorr to obtain a yellow solid. The yield was 55.8 g (55.8%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 13. 1 H NMR(C6D6, 25℃): 0.84(t, 3H), 0.89(t, 6H), 1.44(t, 4H), 1.91(q, 2H), 3.03(q, 4H), 6.16(s, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the yellow solid under a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed a mass loss of 2.3%, indicating virtually no residual mass. Figure 14 shows the TGA analysis results, which show the percentage weight loss as a function of temperature. A yellow solid sample was placed in a sealed container for differential scanning calorimetry (DSC, TA Instruments Discovery 25) and maintained at 40°C for 10 minutes. During differential scanning calorimetry (DSC) analysis, the temperature was increased at a rate of 10°C / minute, and a decomposition peak was observed at 410°C. [Synthesis Example 11] Bis(methylcyclopentadienyl)yttrium chloride ((MeCp) Synthesis of 2YCl To a solution of 300 ml of tetrahydrofuran (THF) and 41.04 g (0.512 mol) of methylcyclopentadiene at -78°C, 204.9 ml (0.512 mol) of a 2.5 M solution of n-butyllithium (n-BuLi) in hexane was slowly added dropwise and stirred for 30 minutes. The mixture was then warmed to room temperature and stirred for another 2 hours to produce a Li-MeCp solution. A new flask was then charged with 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene, which was then cooled to -78°C with stirring. The previously prepared Li-MeCp solution was slowly added dropwise to the flask containing the yttrium chloride mixture and stirred at -78°C for 30 minutes. The mixture was then warmed to room temperature and stirred for 12 hours to produce bis(methylcyclopentadienyl)yttrium chloride. [Synthesis Example 12] Bis(methylcyclopentadienyl)(diethyl-acetamidine)yttrium ((MeCp) 2Y(Et Synthesis of 2Et-AMD) 32.83 g (0.256 mol) of diethylacetamidine was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of a 2.5 M hexane solution of n-butyllithium (n-BuLi) to produce Li-(Et 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the mixture containing (MeCp) at room temperature. The mixture was placed in a flask containing 2YCl and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 157°C and 62 mTorr to obtain a colorless solid. The yield was 60.1 g (58.3%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 15. 1 H NMR(C6D6, 25℃): 0.85(t, 3H), 0.97(t, 6H), 1.95(q, 2H), 2.10(s, 6H), 2.97(q, 4H), 6.0(dt, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the colorless solid at a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed a mass loss of 1.1%, indicating virtually no residual mass. Figure 16 shows the TGA analysis results, which show the percentage weight loss as a function of temperature. A colorless solid sample was placed in a sealed container for differential scanning calorimetry (DSC, TA Instruments Discovery 25) and maintained at 40°C for 10 minutes. During differential scanning calorimetry (DSC) analysis, the temperature was increased at a rate of 10°C / minute, and a decomposition peak was observed at 400°C. [Synthesis Example 13] Bis(methylcyclopentadienyl)(diethyl-n-propionamidino)yttrium ((MeCp) 2Y(Et Synthesis of 2nPr-AMD 36.43 g (0.256 mol) of diethyl-n-propionamidine ester was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, after which 102.4 ml (0.256 mol) of n-butyllithium (n-BuLi) hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et 2nPr-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2nPr-AMD) solution was slowly added dropwise to the mixture containing (MeCp) at room temperature. The mixture was placed in a flask containing 2YCl and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 170°C and 67 mTorr to obtain a colorless liquid. The yield was 59.11 g (59.4%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 17. 1 H NMR(C6D6, 25℃): 0.83(t, 3H), 0.98(t, 6H), 1.34(t, 2H), 1.96(q, 2H), 2.11(s, 6H), 2.97(q, 4H), 6.0(dt, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the colorless liquid at a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed a mass loss of 0.9%, indicating virtually no residual mass. Figure 18 shows the TGA analysis results, which show the percentage weight loss as a function of temperature. A colorless liquid sample was placed in a sealed container for differential scanning calorimetry (DSC, TA Instruments' Discovery 25) and maintained at 40°C for 10 minutes. During differential scanning calorimetry (DSC) analysis, the temperature was increased at a rate of 10°C / minute, and a decomposition peak was observed at 410°C. [Synthesis Example 14] Bis(methylcyclopentadienyl)(di-n-propyl-acetamidine)yttrium ((MeCp) 2Y(nPr Synthesis of 2Et-AMD) 40.02 g (0.256 mol) of di-n-propyl-acetamidine ester was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, followed by the gradual dropwise addition of 102.4 ml (0.256 mol) of n-butyllithium (n-BuLi) hexane solution (2.5 M) to produce Li-(nPr 2Et-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2Et-AMD) solution was slowly added dropwise to the mixture containing (MeCp) at room temperature. 2YCl2 was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was treated at 155°C and 113 mTorr to obtain a yellow liquid. The yield was 60.1 g (58.3%). Nuclear magnetic resonance (NMR, Bruker AV400 MHz HD) analysis results are shown in Figure 19. 1 H NMR(C6D6, 25℃): 0.87(t, 9H), 1.37(q, 4H), 2.01(q, 2H), 2.12(s, 6H), 2.96(q, 4H), 6.0(dt, 8H). Thermogravimetric analysis (TGA, TA Instruments SDT Q600) of the yellow liquid under a nitrogen flow rate of 200 ml / min and a temperature ramp rate of 10°C / min revealed a mass loss of 1.6%, indicating virtually no residual mass. Figure 20 shows the TGA analysis results, which show the percentage of weight loss as a function of temperature. [Synthesis Example 15] Bis(ethylcyclopentadienyl)scandium chloride (EtCp) Synthesis of 2ScCl To a solution of 300 ml of tetrahydrofuran (THF) and 66.09 g (0.661 mol) of ethylcyclopentadiene at -78°C, 264.4 ml (0.661 mol) of a 2.5 M solution of n-butyllithium (n-BuLi) in hexane was slowly added dropwise and stirred for 30 minutes. The mixture was then warmed to room temperature and stirred for another 2 hours to produce a Li-EtCp solution. A new flask was then charged with 50.0 g (0.330 mol) of scandium chloride and 150 ml of toluene, then cooled to -78°C with stirring. The previously prepared Li-EtCp solution was slowly added dropwise to the flask containing the scandium chloride mixture and stirred at -78°C for 30 minutes. The mixture was then warmed to room temperature and stirred for 12 hours to produce bis(ethylcyclopentadienyl)scandium chloride. [Synthesis Example 16] Bis(ethylcyclopentadienyl)(diethyl-n-propionamidino)scandium (EtCp) 2Sc(Et Synthesis of 2nPr-AMD 47.01 g (0.330 mol) of diethyl-n-propionamidine ester was added to 300 ml of tetrahydrofuran (THF) and cooled to -78°C, after which 132.2 ml (0.330 mol) of n-butyllithium (n-BuLi) hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et 2nPr-AMD). The solution was stirred at -78°C for 30 minutes, then heated to room temperature, and then stirred at room temperature for 2 hours. 2nPr-AMD) solution was slowly added dropwise to the mixture containing (EtCp) at room temperature. 2ScCl was placed in a flask and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 150°C and 28.4 mTorr to obtain a colorless liquid. The yield was 73.33 g (59.6%). 1 H NMR(C6D6, 25℃): 0.22(t, 3H), 1.00(t, 6H), 1.19(t, 6H), 1.33(q, 2H), 1.92(q, 2H), 2.38(q, 4H), 3.03(q, 4H), 6.0(dt, 8H). Thermogravimetric analysis (TGA) of a pale yellow liquid sample under a nitrogen flow rate of 200 ml / minute and a temperature ramp rate of 10°C / minute revealed a 1.2% residual mass. Figure 21 shows the TGA analysis results, which show the percentage of weight loss as a function of temperature. Thermogravimetric analysis (TGA) results measured on the precursors according to Synthesis Examples 1 to 16 are shown in Table 1. [Table 1] The differential scanning calorimetry (DSC) analysis results measured on the precursors according to Synthesis Examples 1 to 16 are shown in Table 2. [Table 2] To confirm the viscosity of the precursors of Synthesis Examples 2 and 3, samples were placed in the measuring container of a rotational viscometer (LVD2T, manufactured by Brookfield) and their viscosities were measured at 25°C using a low-viscosity rotor. The results are shown in Table 3. [Table 3] A thin film formation process was carried out using the precursor as described below. The precursor of Synthesis Example 3 and O as an oxidant were used. 3. Film formation evaluation was conducted using the bubbler method through the atomic layer deposition process. The change in film thickness according to the number of process cycles (number of cycles vs. thickness) was used as an indicator for film formation evaluation. After the precursor of Synthesis Example 3 was heated to a vaporization temperature, argon (Ar) gas was injected through a dip line to generate bubbles, thereby supplying vapor of the gaseous precursor compound into the reaction chamber via a carrier gas. Place SiO in the reaction chamber In order to confirm the change in film thickness according to the number of process cycles while maintaining the set temperature (180-320°C) for 2 substrates and TiN substrates, deposition evaluation was carried out under the conditions of precursor (5-15 seconds) - purge (60 seconds) - oxidizer (5-15 seconds) - purge (30 seconds). The purge process is performed using argon (Ar) gas at a flow rate of 700 sccm, and ozone (O 3) Based on 220g / m 3 The precursor was heated to 80°C, and the argon carrier gas injection rate was 200 sccm. The number of deposition cycles was 50, 100, and 150. The film thickness changes with the number of deposition cycles at different process temperatures (180°C, 220°C, 260°C, 275°C, and 320°C) are shown in Figure 22. According to the results of Figure 22, for the evaluated SiO 2 and TiN coupons, a certain film thickness variation according to the number of deposition cycles was observed under all engineering temperature conditions. The deposition rates at different temperatures are shown in Table 4. [Table 4] Furthermore, to confirm the change in the low-temperature film deposition rate (ALD window) depending on the process temperature, after heating the precursor according to Synthesis Example 3 to the vaporization temperature, argon (Ar) gas was injected through the DIP line to generate bubbles, thereby supplying vapor of the gaseous precursor compound into the reaction chamber via a carrier gas. Add SiO into the reaction chamber 2 and TiN substrates and, in order to confirm the change in film deposition rate according to process temperature, the precursor (10 seconds) - purge (60 seconds) - oxidant (10 seconds) - purge (30 seconds) were supplied in this order. As purge gas, argon (Ar) gas was supplied at a flow rate of 70 sccm. As reaction gas, argon (Ar) gas was supplied at a flow rate of 220 g / m 3 Ozone (O 3). The precursor was heated to 80°C, the argon carrier gas injection rate was 200 sccm, and the process was repeated 50 times (cycles). The film deposition rate changes according to the process temperature are shown in Figure 23. As shown in the results in Figure 23, similar film deposition rates (nm / cycle) are shown at different process temperatures (180°C, 220°C, 260°C, 275°C, and 320°C), confirming that it has an engineering temperature range (ALD window). In addition, in order to confirm the crystallinity of the film at different process temperatures, the SiO 2 and the Y values ​​obtained at different temperatures in the TiN test piece through the engineering evaluation 2O 3. X-ray diffraction (XRD) analysis was performed on the thin film to confirm the crystallinity of the film. The crystallinity was measured after the deposition process and also by rapid thermal annealing (RTA) at 600°C for 20 seconds and N The test piece was analyzed after heat treatment under the following conditions. The analysis results confirmed that for the film immediately after deposition, cubic Y-shaped films were observed in the film deposited at 300°C or above. 2O 3 crystallinity, while cubic morphology of Y was observed at all temperatures after the heat treatment. 2O 3. Crystallinity. The analyzed X-ray diffraction (XRD) results are shown in FIG24 . In addition, X-ray electron spectroscopy (XPS depth profile) was performed to confirm the composition and impurities of the thin film. 2 and Y deposited at 275℃ in TiN test piece 2O 3 film, and X-ray electron spectroscopy (XPS) analysis confirmed the film's composition and impurity content. The film's carbon and nitrogen impurities were both found to be 0%, and the O / Y ratio was 1.22. The XPS depth profile results are shown in Figure 25. While the present invention has been described above with reference to preferred embodiments, the present invention is not limited to the aforementioned embodiments. Persons with ordinary knowledge in the technical field to which the present invention pertains may make various modifications and alterations to the present invention without departing from the spirit of the present invention. Such modifications and alterations should be understood to be encompassed within the scope of the appended patent claims. none Figure 1 is the H NMR spectrum of bis(ethylcyclopentadienyl)(diethyl-acetamidine)yttrium ( 1 Figure 2 shows the results of differential scanning calorimetry (TGA) analysis of bis(ethylcyclopentadienyl)(diethyl-acetamidine)yttrium. Figure 3 shows the results of thermogravimetric analysis (DSC) analysis of bis(ethylcyclopentadienyl)(diethyl-acetamidine)yttrium. Figure 4 shows the H NMR spectrum of bis(ethylcyclopentadienyl)(diethyl-n-propionamidino)yttrium. 1 H NMR) analysis results. Figure 5 shows the thermogravimetric analysis (TGA) results of bis(ethylcyclopentadienyl)(diethyl-n-propylamidino)yttrium. Figure 6 shows the H NMR spectrum of bis(ethylcyclopentadienyl)(di-n-propyl-acetamidino)yttrium. 1 H NMR) analysis results. Figure 7 shows the thermogravimetric analysis (TGA) results of bis(ethylcyclopentadienyl)(di-n-propyl-acetamidine)yttrium. Figure 8 shows the H NMR spectrum of bis(isopropylcyclopentadienyl)(diethyl-acetamidine)yttrium ( 1 H NMR) analysis results. Figure 9 shows the H NMR spectrum of bis(cyclopentadienyl)(diethyl-acetamidine)yttrium ( 1 Figure 10 shows the thermogravimetric analysis (TGA) results of bis(cyclopentadienyl)(diethyl-acetamidine)yttrium. Figure 11 shows the H NMR spectrum of bis(cyclopentadienyl)(diethyl-n-propionamidino)yttrium. 1 H NMR) analysis results. Figure 12 shows the thermogravimetric analysis (TGA) results of bis(cyclopentadienyl)(diethyl-n-propylamidino)yttrium. Figure 13 shows the H NMR spectrum of bis(cyclopentadienyl)(di-n-propyl-acetamidino)yttrium. 1 Figure 14 shows the thermogravimetric analysis (TGA) results of bis(cyclopentadienyl)(di-n-propyl-acetamidine)yttrium. Figure 15 shows the H NMR spectrum of bis(methylcyclopentadienyl)(diethyl-acetamidine)yttrium. 1 Figure 16 shows the results of thermogravimetric analysis (TGA) of bis(methylcyclopentadienyl)(diethyl-acetamidine)yttrium. Figure 17 shows the H NMR spectrum of bis(methylcyclopentadienyl)(diethyl-n-propionamidino)yttrium. 1 H NMR) analysis results. Figure 18 shows the thermogravimetric analysis (TGA) results of bis(methylcyclopentadienyl)(diethyl-n-propylamidino)yttrium. Figure 19 shows the H NMR spectrum of bis(methylcyclopentadienyl)(di-n-propyl-acetamidino)yttrium. 1 H NMR analysis results. Figure 20 shows the thermogravimetric analysis (TGA) results of bis(methylcyclopentadienyl)(di-n-propyl-acetamidinyl)yttrium. Figure 21 shows the thermogravimetric analysis (TGA) results of bis(methylcyclopentadienyl)(di-n-propyl-acetamidinyl)scandium. Figure 22 is a graph illustrating the change in film thickness (film deposition rate) with the number of deposition cycles at different temperatures in a thin film formation process using bis(ethylcyclopentadienyl)(diethyl-n-propionamidinyl)yttrium and bis(ethylcyclopentadienyl)(diethyl-acetamidinyl)yttrium as precursors. Figure 23 is a graph illustrating the change in film deposition rate (ALD window) with different temperatures in a thin film formation process using bis(ethylcyclopentadienyl)(diethyl-n-propionamidinyl)yttrium and bis(ethylcyclopentadienyl)(diethyl-acetamidinyl)yttrium as precursors. Figure 24 shows the X-ray diffraction (XRD) analysis results of temperature in a thin film formation process using yttrium bis(ethylcyclopentadienyl)(diethyl-n-propionamidino) as a precursor. Figure 25 shows the X-ray electron spectroscopy (XPS) analysis results of yttrium bis(ethylcyclopentadienyl)(diethyl-n-propionamidino) at 275°C.

Claims

1. A thin film forming precursor containing yttrium or scandium, comprising a compound containing yttrium or scandium represented by the following chemical formula 1: [Chemical Formula 1] In said chemical formula 1, M is yttrium (Y) or scandium (Sc) metal, R1 and R3 are each independently a C1-C5 straight-chain, cyclic alkyl or alkenyl group, R2 is a C2-C4 straight-chain, branched or cyclic alkyl or alkenyl group, R' are the same or different from each other, and are hydrogen atoms or C1-C4 straight-chain, branched or cyclic alkyl or alkenyl groups, n is an integer from 1 to 5, and the viscosity of the thin film forming precursor containing yttrium or scandium is 60 cP or less, the melting point is 70°C or less, and it is in a liquid state at room temperature.

2. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, R1 and R3 are each independently a C2-C5 straight-chain, branched, or cyclic alkyl or alkenyl group.

3. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, R1 and R3 are methyl groups.

4. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, R2 is isopropyl.

5. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, R1 and R3 are each independently a C1-C5 straight-chain alkyl or alkenyl group.

6. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, R1 and R3 are each independently a C1-C5 straight-chain alkyl or alkenyl group, and R2 is a C2-C4 straight-chain alkyl or alkenyl group.

7. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, R1 and R3 are all identical and are C1-C5 straight-chain, branched, or cyclic alkyl or alkenyl groups.

8. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: In the chemical formula 1, all R1 to R3 are identical and are C1-C4 straight-chain, branched, or cyclic alkyl or alkenyl groups.

9. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: The precursor for thin film formation further comprises a solvent.

10. A thin film formation precursor containing yttrium or scandium as described in claim 9, wherein: The solvent is one or more of the following: saturated or unsaturated hydrocarbons, ketones, ethers, glycol dimethyl ether, esters, tetrahydrofurans, and tertiary amines, of C1-C16.

11. A thin film formation precursor containing yttrium or scandium as described in claim 9, wherein: The solvent comprises 1 to 99% by weight relative to the total weight of the precursor for film formation.

12. A thin film formation precursor containing yttrium or scandium as described in claim 1, wherein: The precursor for thin film formation is selected from at least one of the following structures.

13. A method for forming a thin film containing yttrium or scandium, comprising forming a thin film on a substrate using a thin film forming precursor as described in claim 1 or claim 9.

14. A method for forming a thin film containing yttrium or scandium as described in claim 13, wherein the process of forming the thin film on the substrate comprises: forming a precursor film by depositing the film forming precursor on the surface of the substrate; and reacting the precursor film with a reactive gas.

15. A method for forming a thin film containing yttrium or scandium as described in claim 14, wherein: The process of forming the precursor includes the process of vaporizing the film-forming precursor and transferring it into a chamber.

16. A method for forming a thin film containing yttrium or scandium as described in claim 14, wherein: The deposition is performed through one of the following processes: spin-on dielectric (SOD), low-temperature plasma (LTP), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), high-density plasma-chemical vapor deposition (HDPCVD), atomic layer deposition (ALD), or plasma-enhanced atomic layer deposition (PEALD).

17. A method for forming a thin film containing yttrium or scandium as described in claim 13, wherein: The process of forming a thin film on a substrate includes the steps of forming the thin film by supplying a precursor for thin film formation to the substrate and applying plasma.

18. A semiconductor device comprising a thin film containing yttrium or scandium, manufactured by the thin film forming method as described in claim 13.

Images