Sensing chip, measuring chip, measurement systems and calculation methods and computer program products thereof

Abstract

The present invention provides a temperature measurement system and method. The temperature measurement system includes: at least one first PN junction element disposed on a first wafer to sense the temperature of the first wafer; at least one second PN junction element disposed on a second wafer to sense the temperature of the second wafer; a second temperature measurement circuit electrically connected to the first PN junction element and the second PN junction element, the second temperature measurement circuit being disposed on the second wafer to measure a temperature difference value between the temperature of the first wafer and the temperature of the second wafer; a third temperature measurement circuit including at least one third PN junction element, the third temperature measurement circuit being disposed on the second wafer to measure a temperature value of the second wafer; and a processing unit to calculate the temperature difference value and the temperature value of the second wafer to obtain a temperature value of the first wafer.

Claims

1. A temperature measurement system, comprising: at least one first PN junction element disposed on a first chip to sense the temperature of the first chip; at least one second PN junction element disposed on a second chip to sense the temperature of the second chip; a second temperature measurement circuit electrically connected to the first PN junction element and the second PN junction element, the second temperature measurement circuit being disposed on the second chip to measure a temperature difference value between the temperature of the first chip and the temperature of the second chip; a third temperature measurement circuit comprising at least one third PN junction element, the third temperature measurement circuit being disposed on the second chip to measure a temperature value of the second chip; and a processing unit to calculate the temperature difference value and the temperature value of the second chip to obtain a temperature value of the first chip.

2. The temperature measurement system as claimed in claim 1, wherein the at least one first PN junction element is a pair of first PN junction elements and the pair of first PN junction elements has a first common contact, the at least one second PN junction element is a pair of second PN junction elements and the pair of second PN junction elements has a second common contact, and the first common contact and the second common contact have the same reference potential.

3. The temperature measurement system as claimed in claim 2, wherein the second temperature measurement circuit includes at least one multiple current source circuit that provides multiple currents flowing through the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and provides multiple currents flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements.

4. The temperature measurement system as claimed in claim 3, wherein the second temperature measurement circuit includes a calculation unit that calculates the temperature difference value based on a plurality of first voltage signals of the pair of first PN junction elements and a plurality of second voltage signals of the pair of second PN junction elements.

5. The temperature measurement system as claimed in claim 3, wherein the second temperature measurement circuit includes a switching network that allows the multiple current source circuit to selectively switch via the switching network to provide multiple current flows through the pair of first PN junction elements, and to selectively switch via the switching network to provide multiple current flows through the pair of second PN junction elements.

6. The temperature measurement system as claimed in claim 1, wherein the at least one first PN junction element is a diode or a diode pair for sensing a temperature to be measured.

7. The temperature measurement system as described in claim 6 further comprises: a wireless communication module electrically connected to the processing unit, wherein the processing unit calculates the temperature value of the first chip as the temperature to be measured, and controls the wireless communication module to transmit the temperature to be measured wirelessly.

8. A temperature measurement method, comprising: providing at least one first PN junction element disposed on a first wafer to sense the temperature of the first wafer; providing at least one second PN junction element disposed on a second wafer to sense the temperature of the second wafer; measuring the first PN junction element and the second PN junction element to obtain a temperature difference value between the temperature of the first wafer and the temperature of the second wafer; measuring the temperature value of the second wafer; and calculating the temperature difference value and the temperature value of the second wafer to obtain a temperature value of the first wafer.

9. The temperature measurement method as claimed in claim 8, wherein the at least one first PN junction element is a pair of first PN junction elements and the pair of first PN junction elements has a first common contact, the at least one second PN junction element is a pair of second PN junction elements and the pair of second PN junction elements has a second common contact, and the first common contact and the second common contact have the same reference potential.

10. The temperature measurement method as claimed in claim 9, further comprising: providing multiple currents flowing through the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and providing multiple currents flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements.

11. The temperature measurement method as described in claim 10 further comprises: calculating the temperature difference value based on a plurality of first voltage signals of the pair of first PN junction elements and a plurality of second voltage signals of the pair of second PN junction elements.

12. The temperature measurement method as claimed in claim 10, further comprising: selectively switching multiple current flows through the pair of first PN junction elements via a switching network, and selectively switching multiple current flows through the pair of second PN junction elements via the switching network.

13. The temperature measurement method as described in claim 8, wherein the at least one first PN junction element is a diode or a diode pair for sensing a temperature to be measured.

14. The temperature measurement method as described in claim 13 further includes: calculating the temperature value of the first chip as the temperature to be measured, and controlling a wireless communication module to transmit the temperature to be measured wirelessly.

15. A measurement chip, comprising: at least one element contact and a common contact, respectively for electrically connecting at least one first PN junction element, the first PN junction element being disposed on a sensing chip to sense the temperature of the sensing chip; at least one second PN junction element for sensing the temperature of the measurement chip; a second temperature measurement circuit electrically connected to the first PN junction element and the second PN junction element, the second temperature measurement circuit measuring a temperature difference value between the temperature of the sensing chip and the temperature of the measurement chip; and a third temperature measurement circuit, including at least one third PN junction element, the third temperature measurement circuit measuring the temperature value of the measurement chip; wherein, The temperature difference value and the temperature value of the measuring chip are used to calculate and obtain one of the temperature values ​​of the sensing chip.

16. The measurement wafer as claimed in claim 15, wherein the at least one first PN junction element is a pair of first PN junction elements and the pair of first PN junction elements has a first common contact, the at least one second PN junction element is a pair of second PN junction elements and the pair of second PN junction elements has a second common contact, and the first common contact and the second common contact have the same reference potential.

17. The measurement chip as claimed in claim 16, wherein the second temperature measurement circuit includes at least one multiple current source circuit that provides multiple currents flowing through the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and provides multiple currents flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements.

18. The measurement wafer as claimed in claim 17, wherein the at least one multiple current source circuit provides a 1:n current ratio flowing through the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and provides a 1:n current ratio flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements, wherein the pair of first PN junction elements and the pair of second PN junction elements each have the same area ratio.

19. The measurement wafer as claimed in claim 17, wherein the at least one multiple current source circuit provides the same current I flowing through the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and provides the same current I flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements, and the pair of first PN junction elements and the pair of second PN junction elements each have an area ratio of 1:n.

20. The measurement chip as claimed in claim 17, wherein the second temperature measurement circuit includes a switching network that selectively switches to provide the same current I flowing through the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and selectively switches to provide the same current I flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements, wherein the pair of first PN junction elements and the pair of second PN junction elements each have an area ratio of 1:n.

21. The measurement wafer as claimed in claim 17, wherein the second temperature measurement circuit includes a calculation unit that calculates the temperature difference value based on a plurality of first voltage signals of the pair of first PN junction elements and a plurality of second voltage signals of the pair of second PN junction elements.

22. The measurement chip as claimed in claim 15 further includes: a processing unit that calculates the temperature difference value and the temperature value of the measurement chip to obtain the temperature value of the sensing chip.

23. The measurement chip as described in claim 22 further includes: a wireless communication module electrically connected to the processing unit, the processing unit calculating the temperature value of the sensing chip and controlling the wireless communication module to transmit the temperature value wirelessly.

24. A method for manufacturing a measurement chip, comprising: forming at least one element contact and a common contact on a semiconductor substrate using a semiconductor process, respectively for electrically connecting at least one first PN junction element, the first PN junction element being disposed on a sensing chip to sense the temperature of the sensing chip; forming at least one second PN junction element on the semiconductor substrate using a semiconductor process to sense the temperature of the measurement chip; forming a second temperature measurement circuit on the semiconductor substrate using a semiconductor process, the second temperature measurement circuit being electrically connected to the contact and the second PN junction element to measure a temperature difference value between the temperature of the sensing chip and the temperature of the measurement chip; and forming a third temperature measurement circuit on the semiconductor substrate using a semiconductor process, the third temperature measurement circuit including at least one third PN junction element and measuring the temperature value of the measurement chip; wherein... The temperature difference value and the temperature value of the measuring chip are used to calculate the temperature value of one of the sensing chips.

25. The method of manufacturing a measurement wafer as claimed in claim 24, wherein the at least one first PN junction element is a pair of first PN junction elements and the pair of first PN junction elements has a first common contact, and the at least one second PN junction element is a pair of second PN junction elements and the pair of second PN junction elements has a second common contact, the second common contact being electrically connected to the common contact.

26. The method of manufacturing a measurement wafer as claimed in claim 25, wherein the second temperature measurement circuit includes at least one multiple current source circuit that provides multiple currents flowing through the element contact and the common contact to the pair of first PN junction elements to generate a plurality of first voltage signals with respect to the pair of first PN junction elements, and provides multiple currents flowing through the pair of second PN junction elements to generate a plurality of second voltage signals with respect to the pair of second PN junction elements.

27. The method of manufacturing a measurement wafer as claimed in claim 26, wherein the second temperature measurement circuit includes a calculation unit that calculates the temperature difference value based on a plurality of first voltage signals of the pair of first PN junction elements and a plurality of second voltage signals of the pair of second PN junction elements.

28. The method of manufacturing a measurement chip as claimed in claim 24 further comprises: forming a processing unit on the semiconductor substrate using a semiconductor process, the processing unit being used to calculate the temperature difference value and the temperature value of the measurement chip to obtain a temperature value of the sensing chip.

29. The method of manufacturing a measurement chip as described in claim 28 further comprises: forming a wireless communication module on the semiconductor substrate using a semiconductor process, the wireless communication module being electrically connected to the processing unit.

30. A temperature calculation method, comprising the following steps: reading a temperature difference value stored in a memory, wherein the temperature difference value is the difference between the temperature of a sensing chip and the temperature of a measuring chip; reading a temperature value stored in the memory, wherein the temperature value is the temperature of the measuring chip; and calculating the temperature difference value and the temperature value to obtain a temperature value of the sensing chip; wherein, The temperature of the sensing chip is measured by a first PN junction element of the sensing chip, and the temperature of the measuring chip is measured by a second PN junction element of the measuring chip.

31. A computer program product, which is loaded and executed by a microprocessor: a first program instruction causes the microprocessor to read a temperature difference value stored in a memory, wherein the temperature difference value is obtained by measuring the temperature difference between the sensing chip and the measuring chip through a first PN junction element formed on a sensing chip and a second PN junction element formed on a measuring chip; a second program instruction causes the microprocessor to read a temperature value stored in the memory, wherein the temperature value is the temperature of the measuring chip; and a third program instruction causes the microprocessor to calculate the temperature difference value and the temperature value of the measuring chip to obtain a temperature value of the sensing chip.

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