Wiring board and semiconductor device

Abstract

The wiring substrate of the present invention comprises: a first substrate made of ceramic; a second substrate made of organic resin bonded to the first substrate; a first wiring located on the first substrate; and a second wiring located on the second substrate. The first wiring comprises: a through-hole penetrating the first substrate; and a conductor, primarily composed of metal, located inside the through-hole. The interior of the through-hole is filled with the conductor.

Description

Technical Field

[0001] The present invention relates to a wiring substrate and a semiconductor device. Prior Art

[0002] There is known a wiring substrate in which an organic substrate having wiring formed thereon is laminated on a glass cloth substrate serving as a core material.

[0003] A through hole portion is formed in a glass cloth substrate. The through hole portion includes: a through hole that passes through the glass cloth substrate; a plating film that covers the inner wall of the through hole; and a resin that fills the interior of the through hole (see Patent Document 1). [Prior Art Literature] [Patent Document]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2023-111608 Summary of the Invention

[0005] A wiring board according to one aspect of the present invention comprises: a first substrate made of ceramic; a second substrate made of organic resin bonded to the first substrate; a first wiring located on the first substrate; and a second wiring located on the second substrate. The first wiring comprises a through-hole extending through the first substrate; and a conductor primarily composed of metal located within the through-hole. The interior of the through-hole is filled with the conductor. Simple diagram description

[0006] FIG1 is a schematic cross-sectional view showing a state where a semiconductor device according to an embodiment is mounted on a motherboard. FIG2 is a schematic cross-sectional view showing the structure of a wiring board according to the embodiment. FIG3 is a schematic enlarged view of region III shown in FIG2 . FIG4 is a schematic enlarged view of region IV shown in FIG2. FIG5 is an enlarged cross-sectional view showing another example of the wiring board according to the embodiment. Implementation Method

[0007] The following describes in detail embodiments of a wiring board and a semiconductor device for implementing the present invention (hereinafter referred to as "embodiments") with reference to the drawings. The present invention is not limited to these embodiments. Furthermore, the various embodiments can be combined as appropriate within the scope of non-inconsistency in the processing details. In the following embodiments, identical components are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0008] Furthermore, in the following embodiments, expressions such as "consistent," "orthogonal," "perpendicular," or "parallel" may be used. However, these expressions are not required to be strictly "consistent," "orthogonal," "perpendicular," or "parallel." In other words, these expressions allow for variations due to factors such as manufacturing accuracy and installation precision.

[0009] In addition, in order to make the description easier to understand, in each of the figures referenced below, there is an orthogonal coordinate system that specifies mutually orthogonal X-axis directions, Y-axis directions, and Z-axis directions, and uses the positive direction of the Z-axis as the vertically upward direction.

[0010] First, the structure of a semiconductor device 100 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing a state where the semiconductor device 100 according to the embodiment is mounted on a motherboard 4.

[0011] As shown in FIG. 1 , a semiconductor device 100 includes a wiring substrate 1 , a plurality of semiconductor elements 2 , and a relay substrate 3 .

[0012] The wiring board 1 is mounted on the motherboard 4. The wiring board 1 of the embodiment has a ceramic base material as a core material. The wiring board 1 is described in detail below.

[0013] Semiconductor element 2 is mounted on wiring board 1 via interconnect substrate 3. Semiconductor element 2 is a chip or die with circuits or elements formed on a substrate made of a material other than a semiconductor, such as a semiconductor wafer or a glass substrate. The die is a functional block that constitutes part of the integrated circuit of semiconductor device 100.

[0014] While FIG1 illustrates two semiconductor elements 2, semiconductor device 100 may include three or more semiconductor elements. Furthermore, semiconductor device 100 may include only one semiconductor element 2. For example, if semiconductor element 2 is a small chip, an integrated circuit having a single function may be constructed from multiple semiconductor elements 2.

[0015] Relay substrate 3 is a so-called interposer, mediating the electrical connection between wiring substrate 1 and semiconductor element 2. Relay substrate 3 is bonded to semiconductor element 2 via bonding portion 5 and to wiring substrate 1 via bonding portion 6. Bonding portions 5 and 6 are, for example, solder. The Young's modulus of relay substrate 3 can be smaller than that of wiring substrate 1. In this case, relay substrate 3 can have flexibility, allowing it to deform according to the shape of the surface of wiring substrate 1.

[0016] Next, the structure of the wiring board 1 according to the embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic cross-sectional view showing the structure of the wiring board 1 according to the embodiment.

[0017] The wiring board 1 includes a first base material 10 and a second base material 20. The wiring board 1 is a laminate of the first base material 10 and the second base material 20. The wiring board 1 also includes a first wiring 30 and a second wiring 40.

[0018] <First Base Material> The first substrate 10 is a ceramic substrate. The first substrate 10 can also be formed using a ceramic composite material containing a glass component, so-called glass ceramic. Glass ceramic can be any of the following: a composite of a glass phase and ceramic particles, a composite of a glass phase and a crystalline phase formed by partial crystallization of the glass phase, a form in which ceramic particles are present in a glass phase, or a form in which a glass phase is present at the grain boundaries between ceramic particles.

[0019] For example, the first substrate 10 can be LTCC (Low Temperature Co-fired Ceramics). When using LTCC as the first substrate 10, a low-melting-point metal such as copper or silver, which has relatively low electrical resistance, can be used as the wiring. In this embodiment, the low-melting-point metal has a lower melting point than typical metals used for wiring on ceramic substrates, such as tungsten or molybdenum.

[0020] The first substrate 10 may also contain ceramic fillers as ceramic particles. Examples of ceramic fillers include alumina (aluminum oxide), calcium titanate, and magnesium titanate. In particular, the first substrate 10 containing alumina has a higher rigidity.

[0021] The first substrate 10 has a first surface 101 and a second surface 102 located on the opposite side of the first surface 101. The first substrate 10 may be a plate-shaped body having the first surface 101 and the second surface 102 as main surfaces.

[0022] In the embodiment, the first substrate 10 includes a plurality of ceramic layers 11. The plurality of ceramic layers 11 are stacked along the thickness direction of the first substrate 10. This provides a high degree of design freedom for the wiring board 1 having such a first substrate 10. Furthermore, by using a plurality of ceramic layers 11 to form the first substrate 10, the first substrate 10 can be manufactured while confirming the proper formation of the first wiring 30 for each layer, thereby improving the yield of the first substrate 10.

[0023] In the example shown in FIG1 and FIG2, the first substrate 10 has four ceramic layers 11, but the number of ceramic layers 11 is not limited to 4. The number of ceramic layers 11 may be 2 or 3, or may be 5 or more.

[0024] <Second Base Material> The second substrate 20 is a substrate comprising an organic component. The organic component may be an organic resin. The organic resin may be, for example, epoxy resin, acrylic resin, polycarbonate resin, polyimide resin, olefin resin, or polyphenylene resin.

[0025] Alternatively, the organic resin may be, for example, polytetrafluoroethylene (PTFE), other fluororesins, or polyphenylene ether resins. The second substrate 20 may also include components other than the organic resin. Furthermore, in the present invention, the organic resin may, for example, comprise at least 30% by mass of the material constituting the second substrate 20.

[0026] The second substrate 20 has a third surface 103 and a fourth surface 104 located on the opposite side of the third surface 103. The second substrate 20 may be a plate-shaped body having the third surface 103 and the fourth surface 104 as main surfaces.

[0027] The wiring board 1 of the embodiment includes two second base materials 20 . One of the two second base materials 20 is bonded to the first surface 101 of the first base material 10 , and the other is bonded to the second surface 102 of the first base material 10 .

[0028] The third surface 103 of the second substrate 20 located on the first surface 101 of the first substrate 10 is bonded to the first surface 101 of the first substrate 10 , and the plurality of semiconductor elements 2 are mounted on the fourth surface 104 of the second substrate 20 via the interconnect substrate 3 (see FIG. 1 ).

[0029] The third surface 103 of the second substrate 20 located on the second surface 102 of the first substrate 10 is bonded to the first surface 101 of the first substrate 10 , and the fourth surface 104 of the second substrate 20 is bonded to the motherboard 4 via the bonding portion 7 .

[0030] The second substrate 20 includes a plurality of organic resin layers 21. These layers are stacked along the thickness of the second substrate 20. This type of second substrate 20 provides a high degree of design freedom for the wiring board 1. In the example shown in FIG2 , the second substrate 20 includes two organic resin layers 21. However, the number of organic resin layers 21 is not limited to two. The number of organic resin layers 21 may be one or three or more.

[0031] In the examples shown in Figures 1 and 2 , wiring board 1 includes second substrate 20 on both main surfaces (first surface 101 and second surface 102) of first substrate 10. This is not limiting, and wiring board 1 only needs to include second substrate 20 on at least first surface 101 of first substrate 10.

[0032] The second substrate 20 containing an organic component is easier to form a fine wiring pattern than an inorganic substrate. On the other hand, the first substrate 10 made of ceramic has a higher rigidity than the second substrate 20 and a lower density than the second substrate 20.

[0033] The wiring board 1 of the embodiment combines these first substrates 10 and second substrates 20, enabling miniaturization and narrowing of wiring pitches while also improving rigidity. Warping becomes more pronounced with larger substrates. Therefore, using the first substrate 10 to compensate for the low rigidity of the second substrate 20 is particularly useful for increasing the size of the substrate.

[0034] The first substrate 10 and the second substrate 20 are bonded, for example, by hydrogen bonding. Specifically, the first substrate 10 and the second substrate 20 are bonded together by bonding via hydroxyl groups on the first and second substrates 10 and 20. In this case, a ceramic material such as alumina having surface hydroxyl groups can be used for the first substrate 10, and an epoxy resin containing hydroxyl groups can be used for the second substrate 20. This allows the first substrate 10 and the second substrate 20 to be directly bonded without the use of solder or underfill, thereby reducing the thickness of the wiring board 1 and simplifying the manufacturing process.

[0035] <1st wiring> The first wiring 30 is a through-hole conductor located in the first substrate 10. Specifically, the first wiring 30 includes a through-hole 31 that penetrates the first substrate 10 and a conductor 32. The conductor 32 is mainly composed of metal and is located inside the through-hole 31.

[0036] Furthermore, the first wiring 30 has pads 33 on the first surface 101 and the second surface 102 of the first substrate 10. Details of the first wiring 30 will be described below.

[0037] <Second wiring> The second wiring 40 includes a plurality of through-holes 41 and one or more wiring layers 42. The through-holes 41 extend through one or more organic resin layers 21. The wiring layer 42 is located between adjacent organic resin layers 21, electrically connecting the plurality of through-holes 41. Furthermore, the second wiring 40 may also include a pad portion located on the fourth surface 104 of the second substrate 20.

[0038] The first wiring 30 and the second wiring 40 can be, for example, metal conductors primarily composed of copper or silver. For example, both the first wiring 30 and the second wiring 40 can be metal conductors primarily composed of copper. Alternatively, both the first wiring 30 and the second wiring 40 can be metal conductors primarily composed of silver. Furthermore, one of the first wiring 30 and the second wiring 40 can be a metal conductor primarily composed of copper, while the other can be a metal conductor primarily composed of silver.

[0039] By making both the first wiring 30 and the second wiring 40 into metal conductors mainly composed of copper or silver, higher electrical characteristics can be obtained compared to, for example, making one of the first wiring 30 and the second wiring 40 into a metal conductor other than copper and silver.

[0040] The second wiring 40 can also be electrically and thermally connected to the semiconductor element 2 via the interconnect substrate 3. By thermally connecting the second wiring 40, which is mainly composed of copper or silver with relatively high thermal conductivity, to the semiconductor element 2, which serves as a heat source, heat generated by the semiconductor element 2 can be efficiently dissipated through the second wiring 40 and the first wiring 30.

[0041] Patent Document 1 discloses a wiring substrate in which through-holes formed in a glass cloth substrate are filled with resin. The thermal expansion coefficient of the resin is higher than that of the glass cloth substrate, and the difference is relatively large. Therefore, if the temperature of the wiring substrate rises, there is a risk that the resin will bulge out of the through-holes due to thermal expansion. This bulging resin could push up against the wiring on the organic substrate, potentially causing insufficient electrical continuity between the wiring on the organic substrate and the coating. Furthermore, the strength of the resin filling material is relatively low. Therefore, as the number of through-holes formed in the glass cloth substrate increases, maintaining the strength of the glass cloth substrate becomes increasingly difficult.

[0042] Therefore, in the wiring board 1 of the embodiment, the interior of the through-hole 31 formed in the first substrate 10 is filled with a conductor 32 composed primarily of metal. The thermal expansion coefficient of the conductor 32 composed primarily of metal is lower than that of a resin filler. Furthermore, the difference in thermal expansion coefficient between the ceramic first substrate 10 and the conductor 32 composed primarily of metal is smaller than the difference in thermal expansion coefficient between the glass cloth substrate and the resin filler. Therefore, even if the conductor 32 thermally expands, it is less likely to lift up the second wiring 40, and the electrical continuity between the second wiring 40 and the first wiring 30 is less likely to be interrupted, compared to conventional wiring boards. Consequently, the wiring board 1 of the embodiment has higher electrical reliability.

[0043] Furthermore, in conventional wiring substrates, when the wiring on the organic substrate includes a through-hole, if the through-hole is located offset from directly above the through-hole, the force exerted by the resin filler during thermal expansion of the through-hole is concentrated on one side of the through-hole, which can easily cause the wiring on the organic substrate to peel off. In contrast, in wiring substrate 1 of the embodiment, the force exerted by first wiring 30 against second wiring 40 is less likely to occur. Therefore, when second wiring 40 includes a through-hole, even if the through-hole is located offset from directly above the through-hole, the second wiring 40 is less likely to peel off. Therefore, wiring substrate 1 of the embodiment offers greater freedom in wiring design than conventional wiring substrates.

[0044] Furthermore, resin fillers have relatively low strength, so maintaining the strength of the glass cloth substrate becomes increasingly difficult as the number of first wiring lines increases. In contrast, the interiors of through-holes 31 of wiring substrate 1 of the embodiment are filled with metal conductors 32. Therefore, even if the number of first wiring lines 30 formed on first base material 10 increases, the strength of first base material 10 is easily maintained compared to conventional wiring substrates. Consequently, wiring substrate 1 of the embodiment offers greater freedom in wiring design.

[0045] Next, the detailed structure of the first wiring 30 of the embodiment will be described with reference to Fig. 3. Fig. 3 is a schematic enlarged view of the region III shown in Fig. 2. Fig. 3 shows the first wiring 30 located in the center of the wiring substrate 1 of the embodiment.

[0046] Conductor 32 (see FIG2 ) includes a plurality of through-holes 34 and a plurality of solder pads 35. Through-holes 34 fill through-holes 31. For example, a metal conductor primarily composed of copper can be used for through-holes 34. Alternatively, a metal conductor primarily composed of silver or aluminum can be used for through-holes 34. The solder pads 35 are located between two adjacent ceramic layers 11 and around through-holes 31.

[0047] By positioning the solder pad 35 in this manner, when the conductor 32 thermally expands, the solder pad 35 is stuck in the ceramic layer, and the through hole 34 is less likely to bulge out from the first substrate 10. Therefore, compared with the previous wiring board, it is less likely to generate a force that pushes up the second wiring 40.

[0048] The conductor 32 of the first wiring 30 may also contain a glass component 36. In other words, only the first wiring 30 of the first wiring 30 and the second wiring 40 may contain the glass component 36. This configuration securely bonds the first substrate 10 and the conductor 32 via the glass component 36. This reduces the likelihood of a gap forming between the through-hole 31 of the first substrate 10 and the conductor 32, and prevents moisture from entering the interior of the first substrate 10. Compared to a conductor (copper) without a glass component, a conductor (copper) containing the glass component 36 has a lower thermal expansion coefficient, making it less likely to generate a force that could lift the second wiring 40.

[0049] Furthermore, when the conductor 32 of the first wiring 30 includes the glass component 36, the shrinkage rates of the first base material 10 and the first wiring 30 can be made consistent to a certain extent during the firing step when manufacturing the wiring board 1, thereby making it difficult for the first wiring 30 to be positionally shifted.

[0050] The first wiring 30 can be formed, for example, by screen printing a conductive paste containing copper and glass components onto a green sheet, which is the raw material of the ceramic layer 11, and simultaneously firing the green sheet. Specifically, the conductive paste can contain, for example, copper powder, borosilicate glass powder, and silicon dioxide particles.

[0051] On the other hand, the second wiring 40 can be formed by copper plating. In this way, it is possible to set a structure in which only the first wiring 30 of the first wiring 30 and the second wiring 40 contains a glass component.

[0052] Furthermore, as described above, first substrate 10 includes multiple ceramic layers 11. In conventional wiring boards, when the glass core is made thicker to increase rigidity, even when attempting to fill the through-holes of the glass core with conductors using plating, air bubbles enter and filling is prevented. In contrast, wiring board 1 according to the embodiment forms first substrate 10 using multiple ceramic layers 11, allowing conductors 32 to be embedded in each ceramic layer. Therefore, even when first substrate 10 is made thicker to increase rigidity, conductors 32 can be easily filled into through-holes 31.

[0053] Furthermore, as the size of the wiring board 1 increases, the bonding strength at the outer periphery of the first base material 10 and the second base material 20 decreases significantly. The wiring board 1 having the above-described effects is less likely to cause the second wiring to lift up at the outer periphery, making it easier to increase the size of the wiring board 1 compared to conventional wiring boards.

[0054] Furthermore, among the plurality of through-holes 41 included in the second wiring 40, the through-hole 41 located closest to the first substrate 10 may also be located offset from the through-hole 31 of the first substrate 10 in a plan view. For example, in the example shown in FIG3 , the through-hole 41a located closest to the first substrate 10 is located offset from the through-hole 31 of the first substrate 10 in the negative direction of the X-axis.

[0055] The wiring substrate 1 of the embodiment is less likely to cause the second wiring 40 to peel off, so it is easy to arrange the through hole 41 of the second wiring 40 at a position offset from directly above the through hole 31. Therefore, the wiring substrate 1 of the embodiment has a higher degree of freedom in wiring design than conventional wiring substrates.

[0056] Furthermore, as shown in FIG3 , the first substrate 10 includes a glass component 15, and the second substrate 20 may contain a coupling agent chemically bonded to the glass component 15. For example, the glass component 15 is silicon dioxide. A silane coupling agent, for example, may be used as the coupling agent. Alternatively, a titanium-based coupling agent or an aluminum-based coupling agent may be used. With this configuration, chemical bonding between the first substrate 10 and the second substrate 20 allows for a more secure bonding of the dissimilar materials.

[0057] Fig. 4 is a schematic enlarged view of the region IV shown in Fig. 2. Fig. 4 shows the structure of the first wiring 30 located on the outer periphery of the wiring substrate 1 according to the embodiment.

[0058] As shown in Figure 4 , the conductor portion of conductor 32 located in one of the plurality of ceramic layers 11 and the conductor portion located in another adjacent ceramic layer 11 can be offset in the in-plane direction of first substrate 10. In the example shown in Figure 4 , conductor portion 32a located in one ceramic layer 11 and conductor portion 32b located in another adjacent ceramic layer 11 are offset in the X-axis direction, which is the in-plane direction of first substrate 10. This causes conductor 32 to wobble. Furthermore, through-holes 31 located on the outer periphery of wiring substrate 1 also wobble in the same manner as conductor 32.

[0059] Thus, due to the wobbling of the conductor 32, when the conductor 32 expands due to heat, the conductor 32 is stuck in the ceramic layer 11, and the conductor 32 is unlikely to bulge further from the first base 10. Therefore, compared with the previous wiring board, it is less likely to generate a force that pushes up the second wiring 40.

[0060] Furthermore, as shown in Figures 3 and 4, the true straightness of the first wiring 30 located on the outer periphery of the first substrate 10 is lower than that of the first wiring 30 located in the center of the first substrate 10. True straightness refers to the degree of deviation from an imaginary straight line along the axial direction (Z-axis direction) of the first wiring 30. In this specification, "greater true straightness" means less deviation from the imaginary straight line, that is, more linear positionally. On the other hand, "less true straightness" means greater deviation from the imaginary straight line.

[0061] Specifically, as shown in Figure 3 , the first wiring 30 located in the center of the first substrate 10 exhibits a smaller deviation from an imaginary straight line C1 along the axial direction (Z-axis direction) of the first wiring 30 . In other words, the first wiring 30 in the center of the first substrate 10 exhibits a greater straightness. On the other hand, as shown in Figure 4 , the first wiring 30 located in the outer periphery of the first substrate 10 exhibits a larger deviation from an imaginary straight line C2 along the axial direction (Z-axis direction) of the first wiring 30 . In other words, the first wiring 30 in the outer periphery of the first substrate 10 exhibits a smaller straightness. Therefore, the first wiring 30 located in the outer periphery of the first substrate 10 exhibits a lower straightness than the first wiring 30 located in the center of the first substrate 10.

[0062] The bonding force between the first substrate 10 and the second substrate 20 is more likely to be weaker in the outer peripheral portion of the first substrate 10 than in the central portion of the first substrate 10. According to the wiring board 1 of the embodiment, good electrical conduction can be ensured by making the straightness of the first wiring 30 located in the central portion of the first substrate 10 relatively greater, while the bonding force between the first substrate and the second substrate can be relatively weakened by making the straightness of the first wiring 30 located in the outer peripheral portion relatively smaller. In other words, the outer peripheral portion, where the second wiring 40 is more likely to peel, is less likely to generate a force that lifts up the second wiring 40.

[0063] (Other embodiments) FIG5 is an enlarged cross-sectional view showing another example of a wiring board 1 according to an embodiment. As shown in FIG5 , the first substrate 10 may also include interlayer wiring 12. In the present invention, the first substrate 10 is constructed by stacking a plurality of ceramic layers 11, making it easy to arrange the interlayer wiring 12 between adjacent ceramic layers 11. The interlayer wiring 12 may be, for example, a power supply wiring or a grounding wiring. As shown in FIG5 , in the wiring board 1, the first substrate 10 includes interlayer wiring 12 as a grounding wiring in addition to the conductor 32. The interlayer wiring 12 may also contain a glass component 36, similar to the conductor 32. This improves the bonding strength between the ceramic layer 11 and the interlayer wiring 12.

[0064] Furthermore, this technology can also take the following structure. (1) A wiring board (for example, wiring board 1) comprises a first ceramic base material (for example, first base material 10); a second organic resin base material (for example, second base material 20) bonded to the first base material; a first wiring (for example, first wiring 30) located on the first base material; and a second wiring (for example, second wiring 40) located on the second base material. The first wiring has a through-hole (for example, through-hole 31) extending through the first base material; and a conductor (for example, conductor 32) primarily composed of metal located within the through-hole. The interior of the through-hole is filled with the conductor. (2) In the wiring substrate described in (1) above, the conductor may include a glass component (for example, the glass component 36). (3) In the wiring substrate described in (1) or (2) above, the first base material may have a plurality of ceramic layers (for example, the ceramic layer 11). (4) In the wiring substrate described in (3) above, the conductor portion of the conductor located in one of the multiple ceramic layers (for example, the conductor portion 32a) and the conductor portion of the conductor located in another ceramic layer adjacent to the one ceramic layer (for example, the conductor portion 32b) can be offset in the in-plane direction of the first substrate. (5) The wiring substrate described in (1) above may have a plurality of first wirings, and the true straightness of the first wirings located on the outer periphery of the first substrate among the plurality of first wirings may be smaller than the true straightness of the first wirings located on the central portion of the first substrate among the plurality of first wirings. (6) In the wiring substrate described in (3) above, the conductor may have: a through hole (as an example, through hole 34), which is filled in the through hole; and a solder pad (as an example, solder pad 35), which is located around the through hole between two adjacent ceramic layers. (7) In the wiring substrate described in any one of (1) to (6) above, the second substrate may have a plurality of organic resin layers (for example, the organic resin layer 21), and the second wiring may have: a plurality of through holes (for example, the through hole 41), which pass through one or more organic resin layers; and a wiring layer (for example, the wiring layer 42), which electrically connects the plurality of through holes to each other and is located between adjacent organic resin layers. (8) In the wiring substrate described in (7) above, the through hole (for example, through hole 41a) located closest to the first substrate among the plurality of through holes possessed by the second wiring can be located offset from the through hole of the first substrate when viewed from above. (9) In the wiring substrate described in any one of (1) to (8) above, the first substrate may include a glass component (for example, glass component 15), and the second substrate may contain a coupling agent chemically bonded to the glass component. (10) A semiconductor device (for example, semiconductor device 100) may include: a wiring substrate as described in any one of (1) to (9) above; and a semiconductor element mounted on a second substrate of the wiring substrate.

[0065] The embodiments disclosed herein should be considered in all respects to be illustrative and non-restrictive. In practice, the embodiments described above may be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the accompanying claims.

[0066] 1: Wiring board 2: Semiconductor components 3: Relay substrate 4: Motherboard 5: Joint 6: Joint 7: Joint 10: First base material 11: Ceramic layer 12: Interlayer wiring 15: Glass composition 20: Second base material 21: Organic resin layer 30: 1st wiring 31:Through hole 32: Conductor 32a: Conductor part 32b: Conductor part 33: Solder pad 34:Through hole 35: Solder pad 36: Glass composition 40: 2nd wiring 41:Through hole 41a:Through hole 42: Wiring layer 100:Semiconductor device 101: Page 1 102: Page 2 103: Page 3 104: Page 4 C1: imaginary straight line C2: Imaginary straight line X: direction Y: direction Z: Direction

Claims

1. A wiring substrate comprising: a first ceramic substrate; a second organic resin substrate bonded to the first substrate; a first wiring located on the first substrate; and a second wiring located on the second substrate; wherein the first wiring comprises: a through-hole penetrating the first substrate; and a conductor, being primarily composed of metal, located inside the through-hole; wherein the through-hole is filled with the conductor; wherein the first substrate has a plurality of ceramic layers; and wherein a conductor portion of the conductor located on one of the plurality of ceramic layers and a conductor portion located on another ceramic layer adjacent to the first ceramic layer are offset in an in-plane direction of the first substrate.

2. A wiring substrate comprising: a first substrate made of ceramic; a second substrate made of organic resin bonded to the first substrate; a first wiring located on the first substrate; and a second wiring located on the second substrate; wherein the first wiring has: a through-hole penetrating the first substrate; and a conductor, primarily composed of metal, located inside the through-hole; and the through-hole being filled with the conductor; wherein the second substrate has a plurality of organic resin layers; wherein the second wiring has: a plurality of vias penetrating one or more of the organic resin layers; and a wiring layer electrically connecting the plurality of vias to each other, located between adjacent organic resin layers; and wherein the via of the plurality of vias of the second wiring located closest to the first substrate is, in plan view, offset from the through-hole of the first substrate.

3. A wiring substrate comprising: a first substrate made of ceramic; a second substrate made of organic resin bonded to the first substrate; a first wiring located on the first substrate; and a second wiring located on the second substrate; wherein the first wiring comprises: a through-hole penetrating the first substrate; and a conductor, which is mainly composed of metal, located inside the through-hole; wherein the through-hole is filled with the conductor, and wherein the first substrate comprises a glass component, and the second substrate contains a coupling agent chemically bonded to the glass component.

4. A semiconductor device comprising: a wiring substrate as claimed in any one of claims 1 to 3; and a semiconductor element mounted on the second substrate of the wiring substrate.

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