Semiconductor wafer fabrication temperature control method, its computational control device and temperature control system

Abstract

A semiconductor wafer manufacturing process temperature control method is applicable to controlling the process temperature of a semiconductor according to a preset temperature control curve. For each time point of the process period, the method is implemented by a computational control device and includes the following steps: (A) after receiving an optical measurement temperature corresponding to the time point, using a temperature conversion model for converting an optical measurement temperature to be converted into a converted process temperature, converting the optical measurement temperature into the process temperature corresponding to the time point; (B) obtaining a temperature difference between the process temperature and the temperature of the preset temperature control curve at the corresponding time point; (C) calculating a power to be adjusted based on the temperature difference; and (D) controlling a temperature control device according to the power to be adjusted to regulate the temperature.

Description

Technical Field

[0001] This invention relates to a temperature control method, and more particularly to a temperature control method and its operational control device for semiconductor wafer fabrication processes. Prior Technology

[0002] Compared to the lengthy process of traditional furnace tube equipment, Rapid Thermal Annealing (RTA) equipment can achieve rapid heating and cooling, thus shortening the process time. RTA equipment typically uses halogen lamps for heating, making optical temperature sensors susceptible to interference from the halogen light. Furthermore, other components within the RTA chamber also emit radiant heat, creating stray light interference, especially in double-sided heating structures such as bare wafer semiconductors, where optical temperature sensors experience particularly severe interference when measuring temperature.

[0003] The current industry practice is to use optical sealing to block stray light, but this method results in only one side of the semiconductor being heated. Another approach is to use high-speed and complex computing technologies, such as ripple technology, to remove stray light signals. However, this method requires more expensive hardware, such as high-sampling-frequency optical temperature measuring devices and computers for signal processing.

[0004] Furthermore, when the semiconductor to be heated is a high-transmittance wafer, such as a SiC or Sapphire wafer, the signal-to-noise ratio of the wafer's optical measurement results to stray light will be very small, making it difficult to filter out stray light signals. Alternatively, differences in coating or roughness on the back of the wafer can also lead to poor measurement accuracy of the optical temperature measuring device. Summary of the Invention

[0005] Therefore, the objective of this invention is to provide a semiconductor wafer manufacturing process temperature control method that has low computational cost and can solve the interference of stray light.

[0006] Therefore, the semiconductor wafer process temperature control method of the present invention is applicable to controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process period. For each time point of the process period, the semiconductor wafer process temperature control method includes the following steps:

[0007] (A) By means of a computing control device, after receiving an optical measurement temperature obtained from an optical temperature measuring device at a certain time point by measuring a process temperature corresponding to the semiconductor, the optical measurement temperature is converted into the process temperature corresponding to the time point by using a temperature conversion model for converting an optical measurement temperature to be converted by the optical temperature measuring device into a converted process temperature;

[0008] (B) Using the calculation and control device, a temperature difference is obtained based on the process temperature and the preset temperature control curve at the corresponding time point;

[0009] (C) Using the arithmetic control device, a power to be adjusted is calculated based on the temperature difference; and

[0010] (D) The temperature is controlled by the operation control device according to the power to be adjusted, which controls multiple optical heating modules of a temperature control device.

[0011] Another objective of this invention is to provide a computational control device with low computational cost and the ability to resolve interference from stray light.

[0012] Therefore, the computing control device of the present invention is suitable for controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process time during a process period, and is signal-connected to an optical temperature measuring device and a temperature control device for adjusting the temperature. The optical temperature measuring device is used to measure a process temperature corresponding to the semiconductor at each time point during the process period to obtain a corresponding optical measurement temperature. The temperature control device includes multiple optical heating modules. The computing control device includes a storage unit and a processing unit electrically connected to the storage unit.

[0013] For each time point in the process period, after receiving the optical measurement temperature obtained by the optical temperature measuring device at that time point, the processing unit uses the temperature conversion model to convert the optical measurement temperature into the process temperature corresponding to that time point, and obtains a temperature difference between the process temperature and the temperature at the corresponding time point based on the preset temperature control curve, calculates a power to be adjusted based on the temperature difference, and controls the optical heating modules of the temperature control device according to the power to be adjusted to regulate the temperature.

[0014] The advantages of this invention are: by using the temperature conversion model to convert the optical measurement temperature into the process temperature, and then using the process temperature to obtain the temperature difference, and calculating the power to be adjusted based on the temperature difference to control the temperature control device. In this way, the calculation cost of using the temperature conversion model is low, and by converting the optical measurement temperature into the process temperature and then controlling the temperature control device, it is not affected by stray light. Simple Explanation of the Diagram

[0015] Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: Figure 1 is a block diagram illustrating a temperature control system for implementing an embodiment of the semiconductor wafer process temperature control method of the present invention; Figure 2 is a flowchart illustrating a pre-test procedure of an embodiment of the semiconductor wafer fabrication process temperature control method of the present invention; Figure 3 is a schematic diagram illustrating the original optical temperature measurement data and the optical temperature measurement data after filtering. Figure 4 is a flowchart illustrating a temperature control procedure of an embodiment of the semiconductor wafer fabrication process temperature control method of the present invention; Figure 5 is a schematic diagram illustrating the wafer temperature control result of controlling the process temperature of a semiconductor based on the process temperature measured by a temperature measuring device; Figure 6 is a schematic diagram illustrating another wafer temperature control result that controls the semiconductor process temperature based on the process temperature converted by a temperature conversion model; Figure 7 is a schematic diagram illustrating the temperature relationships obtained during a test process. Figure 8 is a schematic diagram illustrating the design of an optical temperature measuring device for measuring the temperature corresponding to a bearing ring; and Figure 9 is a schematic diagram illustrating the design of the optical temperature measuring device for measuring the temperature corresponding to a carrier plate. Implementation

[0016] Referring to Figure 1, an embodiment of the semiconductor wafer process temperature control method of the present invention is applicable to controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process period, and is implemented by a temperature control system.

[0017] The temperature control system includes an optical temperature measuring device 11, a temperature regulating device 12, and a computing control device 13 that connects the optical temperature measuring device 11 and the temperature regulating device 12.

[0018] The optical temperature measuring device 11 is used to measure the process temperature corresponding to the semiconductor to obtain the corresponding optical measurement temperature. The optical temperature measuring device 11 can be implemented as a pyrometer, but is not limited thereto.

[0019] The temperature control device 12 is used to control the temperature and includes multiple optical heating modules 121. The implementation of the temperature control device 12 may be a rapid thermal annealing (RTA) device, but is not limited thereto.

[0020] The computing control device 13 includes a storage unit 131 and a processing unit 132 electrically connected to the storage unit 131. The storage unit 131 is used to store a temperature conversion model for converting an optically measured temperature to be converted by the optical temperature measuring device 11 into a converted process temperature. The computing control device 13 may be implemented as a computer, a single-board computer, or a microcontroller, but is not limited thereto.

[0021] The following will use an embodiment of the semiconductor wafer process temperature control method of the present invention to illustrate the operation details of each component in the temperature control system. This embodiment includes a pre-test program and a temperature control program in sequence.

[0022] Referring to Figures 1 and 2, this pre-test procedure illustrates how to obtain the temperature conversion model. It includes a data collection subroutine comprising steps 201-209 and a model acquisition subroutine comprising step 210. The data collection subroutine is performed for each test time point during the test process to collect the temperature relationships at all time points. Then, the model acquisition subroutine is performed to obtain the temperature conversion model based on the temperature relationships at all time points. It is worth noting that in this pre-test procedure, to accurately obtain the process temperature of the semiconductor, a thermocouple temperature measurement device (not shown) is installed on a test semiconductor of the same type as the semiconductor to actually measure the temperature of the test semiconductor.

[0023] In step 201, the optical temperature measuring device 11 measures the test process temperature corresponding to the test semiconductor at the test time point to obtain a test optical measurement temperature, and transmits it to the computing control device 13.

[0024] In step 202, when the processing unit 132 of the operation control device 13 receives the test optical measurement temperature, the processing unit 132 of the operation control device 13 obtains the test optical measurement temperature.

[0025] In step 203, the processing unit 132 of the operation control device 13 performs a filtering process on the test optical measurement temperature.

[0026] In step 204, the temperature measuring device measures the test process temperature corresponding to the test semiconductor at the test time point and transmits the data to the computing control device 13.

[0027] In step 205, when the processing unit 132 of the computing control device 13 receives the test process temperature, the processing unit 132 of the computing control device 13 obtains the test process temperature.

[0028] In step 206, the processing unit 132 of the operation control device 13 records the filtered test optical measurement temperature and the test process temperature in the storage unit 131.

[0029] In step 207, the processing unit 132 of the operation control device 13 obtains a test temperature difference value based on the test process temperature and the preset temperature control curve at the corresponding test time point.

[0030] In step 208, the processing unit 132 of the operational control device 13 calculates a test power to be adjusted based on the test temperature difference. In this embodiment, a proportional-integral-derivative (PID) control algorithm is used to calculate the test power to be adjusted based on the test temperature difference.

[0031] In step 209, the processing unit 132 of the operation control device 13 controls the optical heating modules 121 of the temperature control device 12 according to the test power to be adjusted, so as to regulate the temperature.

[0032] In step 210, the processing unit 132 of the computing control device 13 obtains the temperature conversion model and stores it in the storage unit 131 based on the test process temperature recorded at each test time point and the filtered test optical measurement temperature.

[0033] It is worth mentioning that during steady-state processing, the process parameters (Recipe) are fixed. Therefore, when the preset temperature control curve (i.e., the Recipe for process temperature parameters) is fixed, the temperature control results of controlling the semiconductor's process temperature according to the preset temperature control curve each time are similar or even the same. Thus, when controlling the semiconductor's process temperature according to the preset temperature control curve during different process periods, such as a first process period (e.g., ten minutes) and a second process period (e.g., ten minutes), the process temperature of the semiconductor at that moment in the first process period is similar or even the same as the process temperature of the semiconductor at that moment in the second process period. Furthermore, the optical measurement temperature obtained by the optical temperature measuring device 11 at that moment in the first process period is also similar or even the same as the optical measurement temperature obtained by the optical temperature measuring device 11 at that moment in the second process period. Therefore, by controlling the test semiconductor according to the preset temperature control curve during the test process, and recording the relationship between the test optical measurement temperature obtained by the optical temperature measuring device 11 and the corresponding test process temperature at each test time point during the test process, the temperature conversion model can be obtained. Through this feature, regardless of the type of semiconductor or the unique temperature control curve of different processes, the pre-test procedure can be executed in advance to perform unique temperature control on the corresponding semiconductor and establish a temperature conversion model corresponding to its unique temperature control curve. Figure 7 illustrates the relationship between the preset temperature control curve used during the test process, the test optical measurement temperature obtained by the optical temperature measuring device 11, the filtered test optical measurement temperature, and the test process temperature obtained by the temperature measuring device. In this embodiment, the obtained temperature conversion model is a lookup table recording the temperature difference between the test optical measurement temperature and the corresponding test process temperature at each test time point, but it is not limited to this.

[0034] It is also worth noting that the optical temperature measuring device 11 has a large measurement error in the low-temperature range. The original optical temperature measurement data 301 in Figure 3 illustrates the measurement results obtained by the optical temperature measuring device 11 when the process temperature of the test semiconductor is controlled at different process stages according to the test process temperature measured by the temperature measuring device and the preset temperature control curve. As can be seen from the original optical temperature measurement data 301, in the temperature range of 280 degrees to 285 degrees, at the same time in different process stages, the test optical temperature measured by the optical temperature measuring device 11 at that time in different process stages is significantly different. In contrast, within the temperature range of 286 to 300 degrees Celsius, the optical measurement temperatures obtained by the optical temperature measuring device 11 at the same time during different process stages are almost similar or even identical. Therefore, the optical measurement temperature can be corrected through the filtering process in step 203, so that the measurement error in the low-temperature range (e.g., 280 to 285 degrees Celsius) is significantly reduced. As shown in the filtered optical measurement temperature data 302 in Figure 3, within the temperature range of 280 to 285 degrees Celsius, the optical measurement temperatures obtained by the optical temperature measuring device 11 at the same time during different process stages are not significantly different after filtering.

[0035] Referring to Figures 1 and 4, this temperature control program illustrates how to control the semiconductor process temperature according to the preset temperature control curve. For each time point in the process period, the temperature control program includes the following steps.

[0036] In step 401, the optical temperature measuring device 11 measures an optical temperature corresponding to a process temperature of the semiconductor at that time point and transmits it to the computing control device 13.

[0037] In step 402, after receiving the optical measurement temperature from the optical temperature measuring device 11, the processing unit 132 of the operation control device 13 performs the filtering process on the optical measurement temperature.

[0038] It should be noted that in other embodiments, the filtering in steps 203 and 402 may be omitted, and the measurement results of the optical temperature measuring device 11 may be used directly for subsequent temperature control. The advantage of performing the filtering in steps 203 and 402 is that it can significantly reduce the error of the measurement results in the low temperature range, thereby making the subsequent temperature control more accurate.

[0039] In step 403, the processing unit 132 of the operation control device 13 uses the temperature conversion model to convert the filtered optical measurement temperature into the process temperature corresponding to the time point. In this embodiment, the processing unit 132 of the operation control device 13 uses the temperature conversion model to obtain the temperature difference corresponding to the time point, and subtracts the temperature difference at the time point from the filtered optical measurement temperature to convert it into the corresponding process temperature, but it is not limited to this.

[0040] In step 404, the processing unit 132 of the operation control device 13 obtains a temperature difference value based on the process temperature and the preset temperature control curve at the corresponding time point.

[0041] In step 405, the processing unit 132 of the operational control device 13 calculates a power to be adjusted based on the temperature difference. In this embodiment, the proportional-integral-derivative (PID) control algorithm is used to calculate the power to be adjusted based on the temperature difference.

[0042] In step 406, the processing unit 132 of the operation control device 13 controls the optical heating modules 121 of the temperature control device 12 according to the power to be adjusted, so as to regulate the temperature.

[0043] It is worth noting that the semiconductor wafer process temperature control method of the present invention first converts the filtered optical measurement temperature into the process temperature corresponding to the time point, and then obtains the temperature difference based on the process temperature. The proportional-integral-derivative (PID) control algorithm is then used to calculate the power to be adjusted based on the temperature difference. Since the temperature difference is ultimately obtained through the process temperature, there is no need to adjust the parameters in the PID control algorithm. The existing PID control architecture can be directly used, significantly improving the compatibility and convenience of using the semiconductor wafer process temperature control method of the present invention. Figure 5 illustrates the wafer temperature control result of directly controlling the semiconductor process temperature based on the process temperature measured by the temperature measurement device and the preset temperature control curve. Figure 6 illustrates the wafer temperature control result of controlling the semiconductor process temperature based on the process temperature converted by the temperature conversion model and the preset temperature control curve. As can be seen from Figures 5 and 6, by converting the filtered optical measurement temperature into the corresponding process temperature using the temperature conversion model, it is indeed very similar to the process temperature measured by the actual temperature measurement device. Therefore, the wafer temperature control results shown in Figures 5 and 6 are almost the same. Obviously, the semiconductor wafer process temperature control method of the present invention can indeed control the semiconductor process temperature according to the preset temperature control curve.

[0044] In this embodiment, the optical temperature measuring device 11 is designed to directly measure the process temperature corresponding to the semiconductor 100 to obtain the corresponding optical measurement temperature. However, referring to FIG8, the temperature control device 12 also includes a support ring, and the semiconductor 100 is supported by a support ring 101 (see FIG8). Since the position of the semiconductor 100 is very close to the position of the support ring 101, the optical measurement temperature obtained by the optical temperature measuring devices 11b and 11c measuring the process temperature corresponding to the semiconductor 100 will have a one-to-one relationship with the optical measurement temperature obtained by the optical temperature measuring device 11a measuring the temperature corresponding to the support ring 101 over time when the system is stable. In other embodiments, the optical measurement temperature obtained by the optical temperature measuring device 11a measuring the temperature corresponding to the carrier ring 101 is used as the optical measurement temperature obtained by the optical temperature measuring devices 11b and 11c measuring the process temperature of the semiconductor 100. However, this is not a limitation. The processing unit 132 can also use the optical measurement fusion temperature obtained by combining the temperature obtained by the optical temperature measuring device 11a measuring the carrier ring 101 with the temperatures obtained by the other optical temperature measuring devices 11b and 11c measuring the semiconductor 100 through sensor fusion as the optical measurement temperature for temperature control. Similarly, referring to FIG9, the temperature control device 12 also includes a carrier plate, and the semiconductor 100 is carried by a carrier plate 102 (see FIG9). In this case, the optical measurement temperature obtained by the optical temperature measuring device 11 measuring the temperature corresponding to the carrier plate 102 is used as the optical measurement temperature obtained by the optical temperature measuring device 11 measuring the process temperature of the semiconductor 100. When there is more than one optical temperature measuring device 11, the temperature measured by the optical temperature measuring device 11 on the carrier plate 102 and the temperature measured by other optical temperature measuring devices 11 on the carrier plate 102 can be fused by sensors to obtain the optical measurement fusion temperature, which is then used as the optical measurement temperature for temperature regulation.

[0045] In summary, the semiconductor wafer fabrication temperature control method of the present invention, by obtaining the temperature conversion model in advance, converts the optical measurement temperature into the corresponding process temperature. The process temperature, measured by the temperature measurement device and unaffected by light interference, accurately reflects the temperature of the semiconductor, replaces the light-affected optical measurement temperature to control the temperature control device 12, effectively solving the interference of stray light. Furthermore, the temperature conversion model eliminates the need for a high-sampling-frequency optical temperature measurement device 11 and a high-performance computing device to remove stray light signals. Moreover, the filtered optical measurement temperature can be more accurately converted into the corresponding process temperature, avoiding errors in the converted process temperature due to measurement errors in the low-temperature range, thus promoting more precise subsequent temperature control. Therefore, the objective of the present invention is indeed achieved.

[0046] However, the above description is merely an embodiment of the present invention and should not be construed as limiting the scope of the present invention. Any simple equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the patent specification of the present invention shall still fall within the scope of the patent of the present invention.

[0047] 11, 11a, 11b, 11c: Optical temperature measuring devices 12: Temperature control device 121: Optical heating module 13: Operation and control device 131: Storage Unit 132: Processing Unit 100: Semiconductors 101: Bearing Ring 102: Support plate 301: Raw optical measurement temperature data 302: Filtered optical measurement temperature data 201~210: Steps 401~406: Steps

Claims

1. A semiconductor wafer process temperature control method, applicable to controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process period, wherein for each time point of the process period, the semiconductor wafer process temperature control method includes the following steps: (A) by means of a computing control device, after receiving an optical measurement temperature obtained from an optical temperature measuring device measuring a process temperature corresponding to the semiconductor at the time point, the computing control device uses a temperature conversion model for converting an optical measurement temperature to be converted into a converted process temperature to convert the optical measurement temperature to be converted into the process temperature corresponding to the time point; (B) by means of the computing control device, obtaining a temperature difference value based on the process temperature and the temperature of the preset temperature control curve at the corresponding time point; (C) by means of the computing control device, calculating a power to be adjusted based on the temperature difference; and (D) by means of the computing control device, controlling a plurality of optical heating modules of a temperature control device according to the power to be adjusted to regulate the temperature.

2. The semiconductor wafer process temperature control method as described in claim 1, prior to step (A), for each test time point of a test process period, the semiconductor wafer process temperature control method further includes the following steps: (E) obtaining a test optical measurement temperature by means of the computational control device, which is obtained by the optical temperature measuring device measuring a test process temperature corresponding to the test semiconductor at the test time point; (F) obtaining the test process temperature corresponding to the test semiconductor measured by a temperature measuring device at the test time point by means of the computational control device; (G) recording the test optical measurement temperature and the test process temperature corresponding to the test time point by means of the computational control device; (H) obtaining a test temperature difference value by means of the computational control device based on the test process temperature and the preset temperature control curve at the temperature corresponding to the test time point; (I) The calculation control device calculates a test power to be adjusted based on the test temperature difference; and (J) The calculation control device controls the optical heating modules of the temperature control device based on the test power to be adjusted, so as to regulate the temperature.

3. The semiconductor wafer process temperature control method as described in claim 2, after step (J), further includes the following step: (K) obtaining the temperature conversion model by means of the computing control device based on the test optical measurement temperature and the test process temperature recorded at each test time point.

4. The semiconductor wafer fabrication temperature control method as described in claim 3, further comprising the following step before step (F): (L) using the computational control device to perform a filtering process on the test optical measurement temperature corresponding to the test time point; wherein, In step (G), the filtered test optical measurement temperature is recorded, and in step (K), the temperature conversion model is obtained based on the test process temperature recorded at each test time point and the filtered test optical measurement temperature.

5. The semiconductor wafer fabrication temperature control method as described in claim 4, wherein, Step (A) includes the following sub-steps: (A-1) After receiving the optical measurement temperature obtained by the optical temperature measuring device at the time point corresponding to the process temperature of the semiconductor, the optical measurement temperature is filtered by the computing control device; and (A-2) The filtered optical measurement temperature is converted into the process temperature corresponding to the time point using the temperature conversion model.

6. A computational control device, adapted to control the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process time period during a process period, and signal-connected to an optical temperature measuring device and a temperature control device for adjusting the temperature, wherein the optical temperature measuring device measures a corresponding process temperature of the semiconductor at each time point during the process period to obtain a corresponding optical measurement temperature, the temperature control device includes a plurality of optical heating modules, and the computational control device includes: a storage unit for storing a temperature conversion model for converting an optical measurement temperature to be converted measured by the optical temperature measuring device into a converted process temperature; and a processing unit electrically connected to the storage unit; wherein... For each time point in the process period, after receiving the optical measurement temperature obtained by the optical temperature measuring device at that time point, the processing unit uses the temperature conversion model to convert the optical measurement temperature into the process temperature corresponding to that time point, and obtains a temperature difference between the process temperature and the temperature at the corresponding time point based on the preset temperature control curve, calculates a power to be adjusted based on the temperature difference, and controls the optical heating modules of the temperature control device according to the power to be adjusted to regulate the temperature.

7. The operational control device as described in claim 6, wherein, is signal-connected to a temperature measuring device, For each test time point in a test process period, the processing unit obtains a test optical measurement temperature obtained by the optical temperature measuring device at the test time point by measuring a test process temperature corresponding to a test semiconductor, and obtains the test process temperature corresponding to the test semiconductor measured by the temperature measuring device at the test time point, wherein the type of test semiconductor is the same as the semiconductor, and records the test optical measurement temperature and the test process temperature corresponding to the test time point, and obtains a test temperature difference value based on the test process temperature and the temperature at the corresponding test time point of the preset temperature control curve, calculates a test power to be adjusted based on the temperature difference value, and controls the optical heating modules of the temperature control device according to the test power to be adjusted to regulate the temperature.

8. The arithmetic control device as described in claim 7, wherein, The processing unit obtains the temperature conversion model and stores it in the storage unit based on the test optical measurement temperature and the test process temperature recorded at each test time point.

9. The arithmetic control device as described in claim 8, wherein, The processing unit performs a filtering process on the test optical measurement temperature corresponding to the test time point, and the recorded test optical measurement temperature is the filtered test optical measurement temperature. The obtained temperature conversion model is obtained based on the test process temperature recorded at each test time point and the filtered test optical measurement temperature.

10. The arithmetic control device as described in claim 9, wherein, After receiving the optical measurement temperature obtained by the optical temperature measuring device at the time point corresponding to the process temperature of the semiconductor, the processing unit performs the optical measurement temperature filtering process and converts the filtered optical measurement temperature into the process temperature corresponding to the time point.

11. A temperature control system, suitable for controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process phase, and comprising: a temperature control device including a plurality of optical heating modules and a support ring for supporting the semiconductor; an optical temperature measuring device for measuring the temperature corresponding to the support ring at each time point during the process phase to obtain a corresponding optical measurement temperature; and a processing control device as claimed in any one of claims 6 to 10, wherein the processing unit uses the optical measurement temperature obtained by measuring the support ring at each time point during the process phase as the optical measurement temperature obtained by the optical temperature measuring device measuring the process temperature corresponding to the semiconductor at each time point during the process phase.

12. A temperature control system, suitable for controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process period, and comprising: a temperature control device including a plurality of optical heating modules and a support ring for supporting the semiconductor; an optical temperature measuring device for measuring the temperature corresponding to the semiconductor at each time point during the process period to obtain a corresponding optical measurement temperature. Another optical temperature measuring device is used to measure the temperature corresponding to the carrier ring at each time point during the process period to obtain another corresponding optical measurement temperature; and a computing control device as described in any of claims 6 to 10, wherein for each time point during the process period, after receiving the optical measurement temperature obtained by the optical temperature measuring device at that time point from the semiconductor and the other optical measurement temperature obtained by the other optical temperature measuring device at that time point from the carrier ring, the processing unit also fuses the optical measurement temperature with the other optical measurement temperature to obtain an optical measurement fusion temperature, and uses the temperature conversion model to convert the optical measurement fusion temperature into the process temperature corresponding to that time point.

13. A temperature control system, suitable for controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process period, and comprising: a temperature control device including a plurality of optical heating modules and a carrier plate for carrying the semiconductor; an optical temperature measuring device for measuring the temperature corresponding to the carrier plate at each time point during the process period to obtain a corresponding optical measurement temperature; and a processing control device as claimed in any one of claims 6 to 10, wherein the processing unit uses the optical measurement temperature obtained by measuring the carrier plate at each time point during the process period as the optical measurement temperature obtained by the optical temperature measuring device measuring the process temperature corresponding to the semiconductor at each time point during the process period.

14. A temperature control system, suitable for controlling the process temperature of a semiconductor according to a preset temperature control curve corresponding to the process period during a process period, and comprising: a temperature control device including a plurality of optical heating modules and a support plate for supporting the semiconductor; and an optical temperature measuring device for measuring the temperature corresponding to the semiconductor at each time point during the process period to obtain a corresponding optical measurement temperature. Another optical temperature measuring device is used to measure the temperature corresponding to the carrier disk at each time point during the process period to obtain another corresponding optical measurement temperature; and a computing control device as described in any of claims 6 to 10, wherein for each time point during the process period, after receiving the optical measurement temperature obtained by the optical temperature measuring device at that time point from the semiconductor and the other optical measurement temperature obtained by the other optical temperature measuring device at that time point from the carrier disk, the processing unit also fuses the optical measurement temperature with the other optical measurement temperature to obtain an optical measurement fusion temperature, and uses the temperature conversion model to convert the optical measurement fusion temperature into the process temperature corresponding to that time point.

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