Two-in-one solar cell having parallel integrated electrodes of thin film pin junction energy area and single chip pin junction energy area and method of manufacturing the same

Abstract

This invention discloses a dual-integrated solar cell integrating a thin-film PIN junction energy region and a single-chip PIN junction energy region electrode in parallel, and its manufacturing method. The dual-integrated solar cell includes a first p-type semiconductor layer electrode (i.e., a first p-type semiconductor layer as the substrate), a first solar cell, a common electrode structure, a second solar cell, and a second end electrode. The first solar cell is connected to the first end electrode and has a first PIN heterojunction structure. The common electrode structure is on the first solar cell. The second solar cell is disposed on the common electrode structure and includes a second PIN heterojunction structure. The common electrode structure connects the first solar cell and the second solar cell in parallel. The second end electrode is disposed on the second solar cell. The metal conductive end electrode (bus bar) of the common electrode structure passes through the second solar cell and extends to its top surface, and the metal conductive end electrode of the common electrode structure and the second end electrode are exposed on the same side.

Claims

1. A method for manufacturing a dual-integrated solar cell that combines a thin-film PIN junction energy region electrode with a single-wafer PIN junction energy region electrode in parallel, comprising: A first solar cell is formed on a first-end P-type semiconductor layer electrode, the first-end P-type semiconductor layer electrode being a P-type semiconductor monocrystalline wafer, wherein the first solar cell has a first PIN heterojunction structure; a common electrode structure is formed on the first solar cell; a second solar cell is formed and connected to the common electrode structure, wherein the second solar cell includes a second PIN heterojunction structure, and the second solar cell is connected in parallel to the first solar cell through the common electrode structure, wherein the metal conductive end electrode of the common electrode structure extends through to the top surface of the second solar cell; and a second end electrode is formed on the second solar cell, wherein the metal conductive end electrode of the common electrode structure and the second end electrode are exposed on the same side.

2. The method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are connected in parallel and integrated, Both the first solar cell and the second solar cell are formed by sputtering, wherein the metal conductive end electrode is formed by electron gun evaporation, sputtering, or screen printing.

3. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are integrated in parallel, The step of forming the first solar cell further includes: forming a first intrinsic semiconductor layer and a first N-type semiconductor layer, wherein the first intrinsic semiconductor layer is disposed on the first terminal P-type semiconductor layer electrode, and the materials constituting the first terminal P-type semiconductor layer electrode, the first intrinsic semiconductor layer and the first N-type semiconductor layer are microcrystalline silicon or polycrystalline silicon; and performing a rapid thermal annealing treatment on the first intrinsic semiconductor layer and the first N-type semiconductor layer.

4. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are connected in parallel and integrated, The first solar cell includes a first-end P-type semiconductor layer electrode, a first intrinsic semiconductor layer, and a first N-type semiconductor layer, wherein the thickness of each of the first N-type semiconductor layer and the first intrinsic semiconductor layer ranges from 100 nm to 500 nm.

5. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are integrated in parallel, The step of forming the second solar cell further includes: sequentially forming a second N-type semiconductor layer, a second intrinsic semiconductor layer, and a second P-type semiconductor layer on the common electrode structure, wherein the materials constituting the second intrinsic semiconductor layer and the second P-type semiconductor layer are amorphous silicon, and the material constituting the second N-type semiconductor layer is amorphous silicon, microcrystalline silicon, or polycrystalline silicon.

6. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, and wherein... The second solar cell includes a second N-type semiconductor layer, a second intrinsic semiconductor layer, and a second P-type semiconductor layer, wherein the thickness of each of the second N-type semiconductor layer, the second intrinsic semiconductor layer, and the second P-type semiconductor layer ranges from 2 nm to 80 nm.

7. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrode are integrated in parallel, and wherein... The steps of forming the common electrode structure include: forming an internal anti-reflection layer on the first solar cell, wherein the internal anti-reflection layer includes a transparent conductive oxide layer and an optical metal layer; and forming a first conductive pattern layer on the internal anti-reflection layer, wherein the first conductive pattern layer includes a plurality of spaced-apart first comb-shaped busbars, each of the first comb-shaped busbars including a first bus electrode line and a plurality of first comb-tooth-shaped electrode lines connected to one side of the first bus electrode line.

8. A method for manufacturing a dual-integrated solar cell as described in claim 7, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, The step of forming the second terminal electrode includes: forming a surface anti-reflective layer on the second solar cell, wherein the surface anti-reflective layer includes a transparent conductive oxide layer and an optical metal layer; and forming a second conductive pattern layer on the surface anti-reflective layer, wherein the second conductive pattern layer includes a plurality of spaced-apart second comb-shaped busbars, each second comb-shaped busbar including a second bus electrode line and a plurality of second comb-shaped electrode lines connected to the second bus electrode line; wherein the plurality of second comb-shaped electrode lines and the plurality of first comb-shaped electrode lines face each other and are arranged alternately.

9. The method for manufacturing a dual-integrated solar cell, as described in claim 8, which integrates the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes in parallel, further includes forming an insulating film to electrically separate the metal conductive terminal electrode of the shared electrode structure from the second solar cell and the surface anti-reflective layer.

10. A dual-integrated solar cell comprising a thin-film PIN junction energy region electrode and a single-chip PIN junction energy region electrode connected in parallel, comprising: A first-end P-type semiconductor layer electrode, wherein the first-end P-type semiconductor layer electrode is a P-type semiconductor single crystal wafer; A first solar cell connected to a first terminal P-type semiconductor layer electrode, wherein the first solar cell has a first PIN heterojunction structure; a common electrode structure on the first solar cell; a second solar cell disposed on the common electrode structure, wherein the second solar cell includes a second PIN heterojunction structure, the common electrode structure being connected in parallel with the first solar cell and the second solar cell; and a second terminal electrode disposed on the second solar cell, wherein the common electrode structure has a metal conductive terminal electrode extending through to the top surface of the second solar cell and exposed on the same side as the second terminal electrode.

11. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 10, wherein, The first solar cell includes a first intrinsic semiconductor layer and a first N-type semiconductor layer. The first intrinsic semiconductor layer is formed on the first terminal P-type semiconductor layer electrode, and the sheet resistance of the first N-type semiconductor layer is less than 100 ohm-square.

12. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 10, wherein, The second solar cell includes a second N-type semiconductor layer, a second intrinsic semiconductor layer, and a second P-type semiconductor layer. The second N-type semiconductor layer and the second P-type semiconductor layer are electrically connected to the common electrode structure and the second terminal electrode, respectively.

13. A dual-in-one solar cell as described in claim 10, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, and the solar cell has a light-receiving side, wherein... The second solar cell is closer to the light-receiving side, while the first solar cell is farther away from the light-receiving side.

14. A dual-integrated solar cell as described in claim 10, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, wherein... The second solar cell includes a second N-type semiconductor layer, a second intrinsic semiconductor layer, and a second P-type semiconductor layer. The material constituting the second N-type semiconductor layer and the second intrinsic semiconductor layer and the second P-type semiconductor layer is amorphous silicon, and the material constituting the second N-type semiconductor layer is amorphous silicon, microcrystalline silicon, or polycrystalline silicon.

15. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 14, wherein, The first solar cell includes a first intrinsic semiconductor layer and a first N-type semiconductor layer, and the materials constituting the first intrinsic semiconductor layer and the first N-type semiconductor layer are microcrystalline silicon or polycrystalline silicon.

16. A dual-in-one solar cell integrating a thin-film PIN junction energy region electrode and a monocrystalline PIN junction energy region electrode as described in claim 10, wherein the shared electrode structure comprises: An internal anti-reflective layer is located on the first solar cell; And a first conductive pattern layer, serving as the metal conductive terminal electrode, is located on the inner anti-reflection layer. The first conductive pattern layer includes a plurality of first comb-shaped busbars spaced apart and arranged side by side. Each first comb-shaped busbar includes a first bus electrode line and a plurality of first comb-shaped electrode lines, wherein the plurality of first comb-shaped electrode lines are connected to one side of the first bus electrode line.

17. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 16, wherein, The linewidth of each of the first bus electrode lines ranges from 0.5 mm to 1.2 mm, and the linewidth of each of the first comb-shaped electrode lines ranges from 0.5 μm to 6 μm.

18. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 16, wherein, The second terminal electrode includes a surface anti-reflective layer and a second conductive pattern layer serving as a metal conductive terminal electrode. The second conductive pattern layer, serving as a metal conductive terminal electrode, is located on the surface anti-reflective layer. The second conductive pattern layer includes a plurality of second comb-shaped busbars spaced apart and arranged side by side. Each second comb-shaped busbar includes a second bus electrode line and a plurality of second comb-shaped electrode lines connected to the second bus electrode line. The plurality of second comb-shaped electrode lines and the plurality of first comb-shaped electrode lines face each other and are arranged alternately.

19. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 18, wherein, The linewidth of each of the second bus electrode lines ranges from 0.5 mm to 1.2 mm, and the linewidth of each of the second comb-shaped electrode lines ranges from 0.5 μm to 6 μm.

20. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 10, wherein, The first solar cell includes a first intrinsic semiconductor layer and a first N-type semiconductor layer, and the second solar cell includes a second N-type semiconductor layer, a second intrinsic semiconductor layer and a second P-type semiconductor layer, wherein the first P-type semiconductor layer electrode and the second P-type semiconductor layer are both connected to the common electrode structure.

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