Two-in-one solar cell having parallel integrated electrodes of thin film pin junction energy area and single chip pin junction energy area and method of manufacturing the same

Abstract

This invention discloses a dual-integrated solar cell integrating a thin-film PIN junction energy region electrode and a single-chip PIN junction energy region electrode in parallel, and its manufacturing method. The dual-integrated solar cell includes a first end electrode, a first solar cell, a common single-chip electrode, a second solar cell, and a second end electrode. The first solar cell is connected to the first end electrode and the common single-chip electrode, and has a first PIN heterojunction structure. The common single-chip electrode can be an N-type or P-type semiconductor single chip. The second solar cell is disposed on the common single-chip electrode and includes a second PIN heterojunction structure. The common single-chip electrode is connected in parallel to the first solar cell and the second solar cell. The second end electrode is disposed on the second solar cell.

Claims

1. A method for manufacturing a dual-integrated solar cell that combines a thin-film PIN junction energy region electrode with a single-wafer PIN junction energy region electrode in parallel, comprising: Form a common single-crystal electrode; A first solar cell is formed on the shared monocrystalline electrode, wherein the first solar cell has a first PIN heterojunction structure; a first end electrode is formed on the first solar cell, wherein the first end electrode includes a metal conductive end electrode located on the top surface of the first solar cell; a second solar cell is formed and connected to the shared monocrystalline electrode; a second end electrode is formed on the second solar cell; wherein the second solar cell includes a second PIN heterojunction structure, and the second solar cell is connected in parallel to the first solar cell through the shared monocrystalline electrode.

2. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the shared single-wafer electrode is an N-type semiconductor single wafer.

3. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are integrated in parallel, Both the first solar cell and the second solar cell are formed by sputtering or chemical vapor deposition, wherein the metal conductive end electrode is formed by electron gun evaporation, sputtering, or screen printing.

4. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are connected in parallel and integrated, The step of forming the first solar cell further includes: forming a first intrinsic semiconductor layer and a first P-type semiconductor layer, wherein the first intrinsic semiconductor layer is disposed on the common monocrystalline electrode, and the material constituting the first P-type semiconductor layer and the first intrinsic semiconductor layer is microcrystalline silicon or amorphous silicon.

5. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are integrated in parallel, The first solar cell includes a first intrinsic semiconductor layer and a first P-type semiconductor layer, and the thickness of each of the first P-type semiconductor layer and the first intrinsic semiconductor layer ranges from 5 nm to 50 nm.

6. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, and wherein... The step of forming the second solar cell further includes: sequentially forming a second P-type semiconductor layer and a second intrinsic semiconductor layer on the common monocrystalline electrode, wherein the materials constituting the second intrinsic semiconductor layer and the second P-type semiconductor layer are polycrystalline silicon or monocrystalline silicon.

7. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrode are integrated in parallel, and wherein... The second solar cell includes a second P-type semiconductor layer and a second intrinsic semiconductor layer, wherein the thickness of each of the second intrinsic semiconductor layer and the second P-type semiconductor layer ranges from 50 nm to 800 nm.

8. A method for manufacturing a dual-integrated solar cell as described in claim 1, wherein the thin-film PIN junction energy region and the single-wafer PIN junction energy region electrodes are integrated in parallel, The step of forming the first end electrode includes: forming a surface anti-reflection layer on the first solar cell, wherein the surface anti-reflection layer includes a transparent conductive oxide layer and an optical metal layer; and forming a conductive pattern layer on the surface anti-reflection layer, wherein the conductive pattern layer includes a plurality of spaced-apart grid-shaped busbars, each of the grid-shaped busbars including a bus electrode line and a plurality of grid-shaped electrode lines connected to the bus electrode line.

9. The method for manufacturing a dual-integrated solar cell, as described in claim 8, which integrates a thin-film PIN junction energy region electrode with a single-wafer PIN junction energy region electrode in parallel, further includes forming an insulating layer located on the transparent conductive oxide layer, thereby electrically insulating the transparent conductive oxide layer of the first end electrode from the outside.

10. A dual-integrated solar cell comprising a thin-film PIN junction energy region electrode and a single-chip PIN junction energy region electrode connected in parallel, comprising: A common single-crystal electrode is used, which is an N-type semiconductor single crystal. A first solar cell is connected to the shared monocrystalline electrode, wherein the first solar cell has a first PIN heterojunction structure; a first end electrode is on the first solar cell, the first end electrode including a metal conductive end electrode; a second solar cell is disposed on the shared monocrystalline electrode; and a second end electrode is on the second solar cell; wherein the second solar cell includes a second PIN heterojunction structure, and the shared monocrystalline electrode is connected in parallel to the first solar cell and the second solar cell.

11. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 10, wherein, The first solar cell includes a first intrinsic semiconductor layer and a first P-type semiconductor layer, the first intrinsic semiconductor layer being formed on the common monocrystalline electrode, and the sheet resistance of the first P-type semiconductor layer being less than 100 ohm-square.

12. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 11, wherein, The second solar cell includes a second P-type semiconductor layer and a second intrinsic semiconductor layer, wherein the second intrinsic semiconductor layer and the second P-type semiconductor layer are electrically connected to the common single-crystal electrode and the second terminal electrode, respectively.

13. A dual-in-one solar cell as described in claim 11, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, and the solar cell has a light-receiving side, wherein, The first solar cell is closer to the light-receiving side, while the second solar cell is farther away from the light-receiving side.

14. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 11, wherein, The second solar cell includes a second P-type semiconductor layer and a second intrinsic semiconductor layer. The second intrinsic semiconductor layer is disposed between the common monocrystalline electrode and the second P-type semiconductor layer. The material of the second P-type semiconductor layer is polycrystalline silicon or monocrystalline silicon.

15. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 11, wherein, The first solar cell includes a first intrinsic semiconductor layer and a first P-type semiconductor layer, and the materials constituting the first intrinsic semiconductor layer and the first P-type semiconductor layer are microcrystalline silicon or amorphous silicon.

16. A dual-cell solar cell integrating a thin-film PIN junction energy region electrode and a monocrystalline PIN junction energy region electrode as described in claim 11, wherein the shared monocrystalline electrode comprises: An internal anti-reflective layer is located on the first solar cell; And a conductive pattern layer serving as the conductive terminal electrode of the metal, the conductive pattern layer being located on the inner anti-reflective layer, wherein the conductive pattern layer includes a plurality of spaced-apart grid-shaped busbars, each of the grid-shaped busbars including a bus electrode line and a plurality of grid electrode lines, the plurality of grid electrode lines being connected to one side of the bus electrode line.

17. A dual-in-one solar cell integrating the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode as described in claim 16, wherein, The linewidth of each of the said bus electrode lines ranges from 0.5 mm to 1.2 mm, and the linewidth of each of the said grid electrode lines ranges from 0.5 μm to 6 μm.

18. A dual-integrated solar cell as described in claim 11, wherein the thin-film PIN junction energy region and the monocrystalline PIN junction energy region electrode are integrated in parallel, wherein... The first solar cell includes a first intrinsic semiconductor layer and a first P-type semiconductor layer, and the second solar cell includes a second P-type semiconductor layer and a second intrinsic semiconductor layer, wherein the first intrinsic semiconductor layer and the second intrinsic semiconductor layer are both connected to the common monocrystalline electrode.

Images